Use of adaptive replacement maps in digital lithography for local cell replacement

Abstract

To provide a system, software, and a method of using the system to edit a design to be printed by a lithography system.SOLUTION: The system and methods utilize a server of a maskless lithography device. The server includes a memory. The memory includes a virtual mask file. The virtual mask file includes cells and the cells include sub-cells that form one or more polygons. The server further includes a controller coupled to the memory. The controller is configured to receive a replacement table. The replacement table includes instructions to replace the cells of the virtual mask file. The controller is further configured to replace the cells with replacement cells according to the replacement table to create an edited virtual mask file.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to lithography systems, and more particularly to systems, software, and methods of using the systems for editing designs to be printed by a lithography system. [Background technology]

[0002] Photolithography is widely used in the fabrication of semiconductor devices and display devices such as liquid crystal displays (LCDs). Large-area substrates are often utilized in the fabrication of LCDs. LCDs, or flat panels, are typically used in active matrix displays such as those found in computers, touchscreen devices, personal digital assistants (PDAs), mobile phones, and television monitors. Generally, flat panels may include a layer of liquid crystal material that forms pixels disposed between two plates. When power from a power source is applied to the liquid crystal material, the amount of light passing through the liquid crystal material at the pixel locations can be controlled, allowing an image to be generated.

[0003] Lithography techniques are typically employed to create the electrical features incorporated as part of the liquid crystal material layer that forms the pixels. Maskless lithography techniques involve creating a virtual mask and removing selected portions of the film to create a pattern in the film on the substrate. Maskless lithography techniques include electron beam lithography, optical lithography, direct laser writing, focused ion beam lithography, and probe tip contact lithography.

[0004] One problem in the art is that maskless lithography techniques can introduce defects into the patterns created. The substrate may have warpage, die shift, or other defects that affect subsequent layers to be patterned on the substrate. Additionally, underlying layers may contain defects that affect layers to be patterned on the underlying layers. These defects must be taken into account when fabricating patterns on the substrate.

[0005] Therefore, what is needed is a system, software, and method of using the system for editing a design to be printed by a lithography system. Summary of the Invention

[0006] In one embodiment, a server for use in performing digital lithography is provided. The server includes a memory. The memory includes a virtual mask file. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The server further includes a controller coupled to the memory. The controller is configured to receive a substitution table. The substitution table includes instructions for substituting cells in the virtual mask file. The controller is further configured to replace the cells with substitution cells according to the substitution table to create an edited virtual mask file. The server is operable to be used to perform digital lithography on a substrate based on the edited virtual mask file.

[0007] In another embodiment, a method is provided. The method includes loading a virtual mask file into a memory of a server of a maskless lithography apparatus. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The method further includes sending a substitution table to the server. The substitution table includes instructions for substituting cells in the virtual mask file. The method further includes substituting the cells with substitution cells according to the substitution table to create an edited virtual mask file. The edited virtual mask file is created at the server of the maskless lithography apparatus.

[0008] In yet another embodiment, a non-transitory computer-readable medium is provided. The non-transitory computer-readable medium stores instructions that, when executed by a processor, cause a computer system to perform steps. The steps include loading a virtual mask file into a memory of a server of a maskless lithography apparatus. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The steps further include transmitting a substitution table to the server. The substitution table includes instructions for substituting cells in the virtual mask file according to the substitution table. The steps further include substituting cells with substitution cells according to the substitution table to create an edited virtual mask file. The edited virtual mask file is created in the server of the maskless lithography apparatus.

[0009] In order that the above-listed features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly outlined above can be made with reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings merely illustrate exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, as other equally effective embodiments may be recognized. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic diagram of a lithographic environment according to an embodiment. [Figure 2] 1 is a perspective view of a maskless lithographic apparatus according to an embodiment; [Figure 3] 1A and 1B are schematic top view diagrams of mask patterns of a virtual mask file according to an embodiment. [Figure 4A] 1 is a schematic top view of a cell according to an embodiment. FIG. [Figure 4B] 1 is a schematic top view of a replacement cell according to an embodiment. [Figure 4C] 1 is a schematic top view of a replacement cell according to an embodiment. [Figure 4D] 1 is a schematic top view of a replacement cell according to an embodiment. [Figure 5] FIG. 1 is a flow diagram of a method for editing a virtual mask file according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] For ease of understanding, wherever possible, like reference numerals have been used to designate like elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0012]

[0001] Embodiments of the present disclosure generally relate to lithography systems. More particularly, embodiments of the present disclosure relate to a system for editing a design to be printed by a lithography system, and a method of using the system. The method includes loading a virtual mask file into a memory of a server of a maskless lithography apparatus. The virtual mask file includes cells. The cells include sub-cells that form one or more polygons. The method further includes sending a substitution table to the server. The substitution table includes instructions for substituting cells in the virtual mask file. The method further includes substituting cells with substitution cells according to the substitution table to create an edited virtual mask file. The edited virtual mask file is created in the server of the maskless lithography apparatus.

[0013] 1 is a schematic diagram of a lithography environment 100 according to one embodiment. As shown, the lithography environment 100 includes, but is not limited to, a virtual mask apparatus 102, a metrology tool 104, a maskless lithography apparatus 106, a conversion server 108, a computer-integrated manufacturing (CIM) system 110, and a communication link 101. Each of the lithography environment apparatuses is operable to be connected to each other via the communication link 101. Each of the lithography environment apparatuses is operable to be connected to the CIM system 110 by the communication link 101. The lithography environments 100 can be located in the same area or production facility, or each of the lithography environment apparatuses can be located in different areas.

[0014] Each of the plurality of lithography environment apparatuses is further indexed in the operations of method 500 described herein. Each of virtual mask apparatus 102, metrology tool 104, maskless lithography apparatus 106, conversion server 108, and CIM system 110 includes an on-board processor and memory configured to store instructions corresponding to any portion of method 500 described below. Communication link 101 may include at least one of a wired connection, a wireless connection, a satellite connection, etc. Communication link 101 may include sending and receiving files for storing data according to embodiments described further herein. Communication link 101 may include temporarily or permanently storing files or data in a cloud before transferring or copying the files or data to the lithography environment apparatus.

[0015] In one embodiment that can be combined with other embodiments described herein, the maskless lithography apparatus 106 and the metrology tool 104 are connected by a transport system. The transport system is operable to transfer substrates between the maskless lithography apparatus 106 and the metrology tool 104. In one embodiment that can be combined with other embodiments described herein, the transport system can include a robot or other equipment operable to transfer patterned substrates and connectable to the CIM system 110. In one embodiment that can be combined with other embodiments described herein, the transport system is physically operable by a user.

[0016] CIM system 110 includes a central processing unit (CPU) 112, support circuits 114, and memory 116. CPU 112 can be any type of computer processor that can be used in an industrial environment to control lithography equipment. Memory 116 is coupled to CPU 112. Memory 116 can be one or more readily available memories, such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard disk, or any other form of digital storage, local or remote. Support circuits 114 are coupled to CPU 112 to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits, subsystems, etc. CIM system 110 can include CPU 112 coupled to input / output (I / O) devices found in support circuits 114 and memory 116. CIM system 110 is operable to receive a virtual mask file and transfer the virtual mask file to maskless lithography equipment 106 via communication link 101. The CIM system 110 is operable to receive the substitution table from the transformation server 108 and to transfer the substitution table to the maskless lithography device 106 via the communication link 101 .

[0017] The memory 116 may include one or more software applications, such as control software programs. The memory 116 may also include stored media data used by the CPU 112 to execute the method 500 described herein. The CPU 112 may be a hardware unit or combination of hardware units capable of executing software applications and processing data. In some configurations, the CPU 112 includes a central processing unit (CPU), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), and / or a combination of such units. The CPU 112 is generally configured to execute one or more software applications and process stored media data, each of which may be contained within the memory 116. The CIM system 110 controls the transfer of data and files to and from various lithography environment equipment. The memory 116 is configured to store instructions corresponding to any operation of the method 500 according to the embodiments described herein.

[0018] The virtual mask device 102 is operable to receive a design file. The design file determines which tasks are to be performed on the substrate. The design file (or computer instructions), sometimes referred to as an imaging design file or a graphic design system (GDS) file, is converted by the virtual mask device 102 into a virtual mask file. The virtual mask file is a digital representation of the design to be printed by the maskless lithography device 106. The virtual mask file includes a mask pattern 300 (shown in FIG. 3). The virtual mask file is sent by the CIM system 110 to the maskless lithography device 106 via the communication link 101. The virtual mask file is stored on the maskless lithography device 106. In one embodiment, which can be combined with other embodiments described herein, the virtual mask file is sent directly to the maskless lithography device 106. In another embodiment, which can be combined with other embodiments described herein, the virtual mask file includes a layering file. For example, the virtual mask file may include multiple layers of a design corresponding to multiple layers to be patterned in photoresist.

[0019] The metrology tool 104 is operable to detect defects in the substrate. Defects on the substrate result in suboptimal printing. The substrate may contain defects such as warpage or die shift. Additionally, an underlying layer may contain defects that affect a layer to be patterned on top of the underlying layer. The layer to be patterned on the substrate or the underlying layer must account for these defects. The virtual mask file for the layer to be patterned can be edited by the maskless lithography apparatus 106 to account for the defects. The defects may be caused by a shift in the underlying layer, resulting in a reduced yield of the patterned substrate. In one embodiment, which can be combined with other embodiments described herein, the metrology tool 104 can detect warpage in the substrate. In another embodiment, which can be combined with other embodiments described herein, the metrology tool 104 can detect die shift in the substrate. The metrology tool 104 is operable to detect defects in each layer patterned on the substrate. The metrology tool 104 is further operable to detect defects in unpatterned substrates.

[0020] The metrology tool 104 communicates with the conversion server 108 via the communication link 101. After detecting defects, the metrology tool 104 sends a defect list to the conversion server 108. The defect list includes the locations of the defects on the substrate. In one embodiment, which may be combined with other embodiments described herein, the conversion server 108 may execute a conversion script that converts the defect list into a substitution table. The conversion script creates the substitution table including desired edits to the virtual mask based on the defects detected on the substrate.

[0021] 2 is a perspective view of a maskless lithography apparatus 106, such as a digital lithography system, that can benefit from embodiments described herein. The maskless lithography apparatus 106 includes a stage 214 and a processing unit 204. The stage 214 is supported by a pair of tracks 216. A substrate 220 is supported by the stage 214. The stage 214 is operable to move along the pair of tracks 216. An encoder 218 is coupled to the stage 214 to provide information about the position of the stage 214 to the lithography server 210. The lithography server 210 includes, but is not limited to, a controller 222, a rasterizer 224, a memory 226, and a GPU 228.

[0022] The controller 222 is generally designed to facilitate control and automation of the processing techniques described herein. The controller 222 may be coupled to or in communication with the processing unit 204, the stage 214, and the encoder 218. The processing unit 204 and the encoder 218 may provide information to the controller 222 regarding substrate processing and substrate alignment. For example, the processing unit 204 may provide information to the controller 222 notifying the controller 222 that substrate processing is complete. The controller 222 facilitates control and automation of the maskless lithography process based on a virtual mask file provided to the lithography server 210. The virtual mask file is created by the virtual mask device 102. The virtual mask file is provided to the lithography server 210 from the CIM system 110 via the communication link 101. The design file includes mask pattern data.

[0023] Controller 222 retrieves and executes programming data stored in memory 226 and coordinates the operation of other system components. Similarly, controller 222 stores application data in memory 226 and retrieves application data resident in memory 226. Controller 222 may be one or more central processing units (CPUs). Alternatively or additionally, controller 222 may be one or more application-specific software programs.

[0024] The memory 226 may store instructions and logic executed by the controller 222. Furthermore, the memory 226 may be one or more of a random access memory (RAM) and a non-volatile memory (NVM), which may be a hard disk, a network attached storage (NAS), and a removable storage device, among others.

[0025] Substrate 220 comprises any suitable material used as part of a flat panel display, such as glass. In other embodiments, which can be combined with other embodiments described herein, substrate 220 is made of other materials that can be used as part of a flat panel display. Furthermore, substrate 220 can be a wafer used for advanced packaging (AP) or similar applications in semiconductor manufacturing. Substrate 220 has a film layer to be patterned formed thereon, such as by pattern etching, and a photoresist formed on the film layer to be patterned that is sensitive to electromagnetic radiation, such as UV or deep UV “light.”

[0026] A positive photoresist includes a portion of the photoresist that, after a pattern has been written into the photoresist using electromagnetic radiation, becomes soluble in a photoresist developer applied thereto upon exposure to radiation. A negative photoresist includes a portion of the photoresist that, after a pattern has been written into the photoresist using electromagnetic radiation, becomes insoluble in a photoresist developer applied thereto upon exposure to radiation. The chemical composition of the photoresist determines whether the photoresist is a positive or negative photoresist. Examples of photoresists include, but are not limited to, at least one of diazonaphthoquinone, phenol formaldehyde resin, poly(methyl methacrylate), poly(methyl glutarimide), and SU-8. After the photoresist is exposed to electromagnetic radiation, the resist is developed to leave a patterned photoresist on the underlying film layer. The patterned photoresist is then used to pattern-etch an underlying thin film through the openings in the photoresist to form a portion of the electronic circuitry of a display panel or advanced packaging wafer.

[0027] The processing unit 204 is supported by supports 208 such that the processing unit 204 straddles a pair of tracks 216. The supports 208 provide an opening 212 for the pair of tracks 216 and the stage 214 to pass underneath the processing unit 204. The processing unit 204 is a pattern generator configured to receive a virtual mask file from the lithography server 210 and expose photoresist in a maskless lithography process using one or more image projection systems 206 operable to project a writing beam of electromagnetic radiation onto a substrate 220. A pattern generated by the processing unit 204 is projected by the image projection systems 206, exposing the photoresist of the substrate 220 to a mask pattern 300 that is written into the photoresist.

[0028] In one embodiment, which can be combined with other embodiments described herein, each image projection system 206 includes a spatial light modulator that modulates incident light to create a desired image. Each spatial light modulator includes multiple electrically addressable elements that can be individually controlled. Each electrically addressable element can be in an “on” or “off” position based on the virtual mask file and edited virtual mask file created through the method 500 described herein. When light reaches the spatial light modulator, the electrically addressable elements in the “on” position project multiple writing beams onto a projection lens (not shown). The projection lens then projects the writing beams onto the substrate 220. Electrically addressable elements include, but are not limited to, digital micromirrors, liquid crystal displays (LCDs), liquid crystal over silicon (LCoS) devices, ferroelectric liquid crystal on silicon (FLCoS) devices, microshutters, micro LEDs, VCSELs, liquid crystal displays (LCCs), or any solid-state emitters of electromagnetic radiation.

[0029] Rasterizer 224, in some embodiments, comprises one or more rasterizer computation engines and, in embodiments, one or more spatial light modulator (SLM) arrays. In alternative embodiments, the SLM array may comprise one or more digital micromirror (DMD) devices, micro LEDs, VCSELs, and / or LCD arrays, or other types of spatial light modulators. Rasterizer 224 may include a rasterizer computation engine that includes one or more field programmable gate arrays (FPGAs), graphic processing units (GPUs), a combination of FPGAs and GPUs, or other processing hardware / firmware capable of converting data in an image format into a format understandable by the DMD.

[0030] The virtual mask file is stored on the lithography server 210 of the maskless lithography apparatus 106. The virtual mask file includes a mask pattern 300 that includes a design to be patterned on a substrate (e.g., substrate 220). The virtual mask file includes cells 304 (shown in FIG. 3) of the mask pattern 300. The cells 304 include multiple sub-cells 402 (shown in FIG. 4A). The multiple sub-cells 402 form polygons 404 (shown in FIG. 4A). In one embodiment, which can be combined with other embodiments described herein, the multiple sub-cells 402 form one or more polygons 404. In another embodiment, which can be combined with other embodiments described herein, the cells 304 can be repeated. For example, the mask pattern 300 formed by the cells 304 can include multiple identical cells 304 that repeat to form the mask pattern 300. The virtual mask file can be edited according to a substitution table. A substitution cell 406 (shown in FIGS. 4B-4D) can replace the cell 304 in FIGS. 3 and 4A according to a substitution table.

[0031] The virtual mask file is stored in the lithography server 210 of the maskless lithography apparatus 106. In one embodiment, which can be combined with other embodiments described herein, the virtual mask file is stored on a disk in the lithography server 210. The lithography server 210 can be coupled to the maskless lithography apparatus 106. Before a lot of substrates (e.g., a lot of substrates 220) is patterned in the maskless lithography apparatus 106, the virtual mask file is loaded into memory 226. The maskless lithography apparatus 106 patterns the substrates according to the virtual mask file stored in memory 226.

[0032] A lot of substrates includes a lot ID number. Each lot ID number corresponds to a virtual mask file. Multiple virtual mask designs are stored in the maskless lithography tool 106, each corresponding to a unique lot ID number. Thus, the lot ID number corresponds to a design to be patterned on the lot of substrates. In one embodiment, which can be combined with other embodiments described herein, the lot ID number is readable by the CIM system 110. The CIM system 110 communicates the lot ID associated with the lot of substrates to be patterned to the maskless lithography tool 106. The virtual mask file corresponding to the lot ID number is loaded into memory 226.

[0033] The substrate lot includes a plate ID number, which is a number unique to each lot of substrates. The plate ID number allows the substrate lot to be efficiently tracked and its characteristics to be determined. For example, when a defect is detected in the substrate lot by the metrology tool 104, the plate ID number corresponding to the substrate lot can be read by the CIM system 110. The CIM system communicates the plate ID number to the maskless lithography apparatus 106 so that the substrate lot can be identified.

[0034] The substitution table generated by the conversion server 108 is transferred by the CIM system 110. The CIM system 110 identifies the plate ID number associated with the substitution table and matches the substitution table with the lot of the substrate having the plate ID number. The CIM system 110 communicates with the lithography server 210 of the maskless lithography apparatus 106 and transfers the substitution table to the lithography server 210. The substitution table contains instructions for editing the virtual mask file loaded into the memory 226. Cells 304 (shown in FIG. 3) can be edited by replacing the cells 304 with replacement cells 406 (shown in FIGS. 4B-4D). The substitution table provides instructions for editing the polygons 404 of the cells 304 with the replacement cells 406. The replacement cells 406 replace the desired number of cells 304 to create an edited virtual mask file. The edited virtual mask file is transferred to the processing unit 204. The processing unit 204 reads the edited virtual mask file and instructs the image projection system 206 to pattern the edited design onto the substrate 220 .

[0035] By utilizing a substitution table to edit the mask pattern 300, the virtual mask file can be edited at the lithography server 210. Editing the virtual mask file at the lithography server 210 ensures that the original version of the virtual mask file remains unchanged. Furthermore, the edits to the virtual mask file are applied near the end of the method 500 with minimal impact on the manufacturing run time.

[0036] FIG. 3 is a schematic top view of a mask pattern 300 of a virtual mask file, according to one embodiment. The virtual mask file includes the mask pattern 300. The mask pattern 300 can be organized into a hierarchy that can be referenced to create an array 302. The array 302 includes cells 304. In one embodiment that can be combined with other embodiments described herein, one of the cells 304 includes, but is not limited to, a pixel cell, a bezel cell, a contact cell, an indium tin oxide (ITO) cell, or a display cell. The cell 304 can be any combination of a pixel cell, a bezel cell, a contact cell, an indium tin oxide (ITO) cell, or a display cell. In another embodiment that can be combined with other embodiments described herein, the cell 304 is a pixel cell. The pixel cell includes one or more subpixels. In yet another embodiment that can be combined with other embodiments described herein, the cells 304 overlap (shown as overlapping cell 304a). In another embodiment, which can be combined with other embodiments described herein, the cells 304 are non-overlapping (shown as adjacent cells 304b).

[0037] In one embodiment, which can be combined with other embodiments described herein, the cells 304 form a circuit. The circuit can include, but is not limited to, cellular circuitry, wire-cell circuitry, antennas, contact pads, driver circuits, traces, and other circuitry. In another embodiment, which can be combined with other embodiments described herein, the cells 304 include multiple layers to be patterned. Each layer can represent a different processing step in a lithography process. Furthermore, the cells 304 may span one or more layers within the design of the mask pattern 300.

[0038] 1 and 2, the mask pattern 300 contained in a virtual design file is stored on the lithography server 210. When the CIM system 110 reads the lot ID number of the lot of substrates corresponding to the virtual design file, the virtual design file containing the mask pattern 300 is loaded into the memory 226 of the lithography server 210. Each cell 304 of the mask pattern 300 can be edited by a substitution table provided to the lithography server 210.

[0039] FIG. 4A is a schematic top view of a cell 304. The cell 304 includes multiple subcells 402. In one embodiment, which can be combined with other embodiments described herein, the cell 304 is a pixel cell, a bezel cell, a contact cell, an ITO cell, or a display cell. Each subcell 402 of the multiple subcells 402 can be an active subcell 402a or an inactive subcell 402b. FIG. 4A shows the cell 304 in which the multiple subcells 402 form a polygon 404. In one embodiment, which can be combined with other embodiments described herein, the polygon 404 can span one or more layers of the cell 304. The polygon 404 to be patterned on the substrate 220 can be edited by a substitution table. For example, if a defect is detected by the metrology tool 104 on the substrate 220, the mask pattern 300 can be edited to account for the defect by inserting a substitution cell 406.

[0040] 4B-4D are schematic cross-sectional views of a replacement cell 406. The replacement cell 406 shown in FIGS. 4C-4D can replace the cell 304. For example, the cell 304 to be patterned on the substrate 220 at a predetermined location can be edited via a replacement table, such as by replacing the cell 304 with one of the replacement cells 406. The replacement cell 406 includes multiple subcells 402. Each subcell 402 of the multiple subcells 402 can be an active subcell 402a or an inactive subcell 402b. The multiple subcells 402 can be patterned to edit the polygon 404 as desired. Once the cell 304 has been replaced with the replacement cell 406, an edited virtual mask file is created that includes the replacement cell 406.

[0041] Editing of cells 304 of mask pattern 300 is performed locally at lithography server 210. In one embodiment, which can be combined with other embodiments described herein, cells 304 of mask pattern 300 having polygons 404 can be replaced by replacement cells 406. Replacement cells 406 edit polygons 404 as desired.

[0042] Figure 4B shows a permutation cell 406 having multiple subcells 402 that form a polygon 404. The polygon 404 of Figure 4A is edited according to a permutation table to form the polygon of Figure 4B. In one embodiment, which can be combined with other embodiments described herein, inactive subcells 402b can be patterned to be active subcells 402a. Thus, the polygon 404 can be edited by activating the desired subcells 402.

[0043] 4C shows a replacement cell 406 having multiple subcells 402. The polygon 404 of FIG. 4A is edited according to a replacement table to remove the polygon 404. In one embodiment, which can be combined with other embodiments described herein, the active subcell 402a can be patterned to be an inactive subcell 402b. For example, as shown in FIG. 4C, adding the inactive subcell 402b to the replacement cell 406 removes the polygon 404.

[0044] 4D illustrates a permutation cell 406 having multiple subcells 402 that form a polygon 404. The polygon 404 of FIG. 4A is edited according to a permutation table to form the polygon 404 of FIG. 4D. In one embodiment, which may be combined with other embodiments described herein, the active subcell 402a may be shifted. In one embodiment, which may be included in other embodiments described herein, the permutation cell 406 includes the polygon 404 shifted in the x-direction relative to the cell 304, as shown in FIG. 4D. In another embodiment, which may be combined with other embodiments described herein, the permutation cell 406 is edited to shift the polygon 404 in the y-direction relative to the cell 304. In yet another embodiment, which may be combined with other embodiments described herein, the permutation cell 406 is edited to shift the polygon 404 in both the x- and y-directions relative to the cell 304.

[0045] In one embodiment, which can be combined with other embodiments described herein, the mask pattern 300 can be adjusted to account for variations in substrate lots, such as substrate rotation, substrate expansion, substrate shrinkage, and other geometric shifts.

[0046] 5 is a flow diagram of a method 500 for editing a virtual mask file. In operation 501, a design file is converted into a virtual mask file. The design file is converted into the virtual mask file in virtual mask tool 102. The virtual mask file is stored in maskless lithography tool 106. For example, the virtual mask file is stored on the disk of maskless lithography tool 106. Multiple virtual mask files are stored in maskless lithography tool 106, each corresponding to a different design file.

[0047] In operation 502, the virtual mask file is loaded into memory 226 of lithography server 210. In one embodiment, which can be combined with other embodiments described herein, CIM system 110 reads a lot ID number corresponding to a lot of substrates to be patterned. The lot ID number contains information about which virtual mask file, among multiple virtual mask files, is needed for the patterning process. CIM system 110 communicates the lot ID number of the lot of substrates to be patterned to maskless lithography apparatus 106 so that the corresponding virtual mask file can be loaded into memory 226.

[0048] In operation 503, a substitution table is generated and sent to the lithography server 210. The metrology tool 104 detects defects in the lot of substrates. A defect list is created and sent to the conversion server 108. The conversion server 108 converts the defect list into a substitution table. The substitution table takes into account the defects in the lot of substrates and creates a substitution table that improves the quality of the lot of substrates. The substitution table provides instructions for replacing cells 304 with replacement cells 406. Each substitution table is matched with the plate ID number of the lot of substrates. The CIM system 110 reads the plate ID number of the lot of substrates. Thus, a substitution table corresponding to the lot of substrates can be sent to the lithography server 210.

[0049] In operation 504, the virtual mask file is edited according to the substitution table. The mask pattern 300, which includes the polygon 404, is edited by replacing the cell 304 with a substitution cell 406. The substitution cell 406 activates, deactivates, shifts, or replaces the sub-cell 403 of the substitution cell 406 based on instructions from the substitution table. The substitution cell 406 can then replace the cell 304 of the mask pattern 300 to form an edited virtual mask file. The original version of the virtual mask file is stored in the maskless lithography device 106. In one embodiment, which can be combined with other embodiments described herein, the edited virtual mask file is sent to the rasterizer 224 in the lithography server 210 for rasterization.

[0050] Editing the virtual mask file on the lithography server 210 allows cells 304 to be edited without modifying the original version of the virtual mask file. Editing cells 304 occurs near the end of the process, so there is little impact on runtime. Furthermore, editing the virtual mask file results in higher quality patterning of the substrate, because cells 304 can be edited to account for defects detected in the substrate 220 or underlying layers. The method 500 allows for efficient accounting for different defects in each substrate.

[0051] In operation 505, the edited virtual mask file is sent to processing unit 204 of maskless lithography tool 106. Processing unit 204 utilizes the edited virtual mask file to pattern a lot of substrates.

[0052] In summary, a system, software, and method for using the system are provided for editing a design to be printed by a lithography system. The system and method utilize a substitution table to edit a virtual mask file. The virtual mask file contains mask patterns of the design to be printed on a lot of substrates by a maskless lithography tool. The substitution table is provided from a metrology tool and server to a lithography server of a maskless exposure tool. The substitution table contains instructions for substituting cells of the mask patterns in the virtual mask file. The substitution table takes into account defects on the lot of substrates detected by the metrology tool. Cells are replaced with substitution cells to create an edited virtual mask file. Creating an edited virtual mask file on the lithography server results in improved substrate quality. Furthermore, editing the virtual mask file near the end of the method has a negligible impact on run time.

[0053] While the foregoing is directed to examples of the present disclosure, other and further examples of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A server for use in performing digital lithography, comprising: a memory containing a virtual mask file, the virtual mask file containing cells, the cells containing sub-cells that form one or more polygons; a controller coupled to the memory, receiving a substitution table containing instructions for substituting the cells of the virtual mask file; replacing the cells with replacement cells according to the replacement table to create an edited virtual mask file; a controller configured to: Equipped with a server operable to be used to perform digital lithography on a substrate based on said edited virtual mask file;

2. The server of claim 1 , wherein the server is operable to activate or deactivate the sub-cell based on the substitution table.

3. The server of claim 1 , wherein the server is operable to shift the sub-cells based on the permutation table.

4. The server of claim 1 , wherein the edited virtual mask file includes at least one of the replacement cells.

5. The server of claim 1 , wherein the virtual mask file includes a mask pattern.

6. The server of claim 1 further comprising a rasterizer and a GPU.

7. The server of claim 1 , wherein the substitution table is formed from a defect list provided by a metrology tool coupled to the server.

8. The server of claim 1 , wherein the virtual mask file includes a layer of the cell.

9. The server of claim 1 , wherein the virtual mask file includes an array of the cells, the cells including pixel cells, bezel cells, contact cells, indium tin oxide (ITO) cells, or display cells.

10. loading a virtual mask file into a memory of a server of a maskless lithography apparatus, the virtual mask file including cells, the cells including sub-cells that form one or more polygons; transmitting a substitution table to the server, the substitution table including instructions for substituting the cells of the virtual mask file; replacing the cells with the replacement cells according to the replacement table to create an edited virtual mask file, wherein the edited virtual mask file is created at the server of the maskless lithography apparatus; and A method comprising:

11. The method of claim 10 , wherein the server is operable to activate or deactivate the sub-cell based on the substitution table.

12. The method of claim 10 , wherein the server is operable to shift the sub-cells based on the permutation table.

13. The method of claim 10 , wherein the edited virtual mask file includes at least one of the replacement cells.

14. The method of claim 10 , wherein the virtual mask file includes a mask pattern.

15. The method of claim 10 , wherein the server further comprises a rasterizer and a GPU.

16. The method of claim 10 , wherein the cells of the virtual mask file overlap.

17. The method of claim 10 , wherein the virtual mask file includes a layer of the cells.

18. The method of claim 10 , wherein the virtual mask file includes an array of the cells, the cells including pixel cells, bezel cells, contact cells, indium tin oxide (ITO) cells, or display cells.

19. The method of claim 10 , further comprising transmitting the edited virtual mask file to a processing unit of the maskless lithography apparatus.

20. When executed by the processor, the computer system: loading a virtual mask file into a memory of a server of a maskless lithography apparatus, said virtual mask file comprising cells, said cells comprising sub-cells forming one or more polygons; sending a substitution table to the server, the substitution table including instructions for substituting the cells of the virtual mask file; replacing the cells with the substitution cells according to the substitution table to create an edited virtual mask file, the edited virtual mask file being created at the server of the maskless lithography apparatus; A non-transitory computer-readable medium storing instructions for causing a computer to execute the method.

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