Processing chamber with plurality of plasma units

Abstract

To provide a processing apparatus that includes both a remote plasma unit and a direct plasma unit and a process.SOLUTION: In a processing tool 200, a processing chamber 201 that accommodates a semiconductor substrate 230 in a processing region 215 includes a remote plasma unit 206 and a direct plasma unit 208. One of the remote plasma unit and the direct plasma unit generates remote plasma and the other of the remote plasma unit and the direct plasma unit generates direct plasma. The combination of the remote plasma unit and the direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and / or from native oxide formation. The combination of the remote plasma unit and the direct plasma unit is used to deposit thin films on a substrate.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure relate generally to semiconductor processes and apparatus. More specifically, embodiments relate to processing equipment and processes that include both remote and direct plasma units. [Background technology]

[0002]

[0002] Integrated circuits are made possible by processes that create patterned layers of material on a substrate. Creating patterned material on a substrate requires a controlled method for removing exposed material. Chemical etching is used for a wide variety of purposes, including transferring a photoresist pattern to an underlying layer, thinning a layer, or reducing the lateral dimensions of features already present on a surface. Sometimes it is necessary to have an etching process that etches one material faster than another, for example, to facilitate the pattern transfer process.

[0003] Incoming substrates often have residues on them from previous processing, from native oxide formation on metal, and from etching residues from via hole formation. To improve the process performance of metal fills, e.g., low line resistance, high yield, and high reliability, the residues and / or native oxides must be removed. Remote plasma and direct plasma alone cannot effectively remove residues and native oxides within a structure. Remote plasma radicals do not reach the structure trench wells due to their lifetime, and direct plasma does not clean the sidewalls of the structure due to its directionality.

[0004]

[0004] Therefore, there is a need in the art for improved processes and apparatus for etching (cleaning) materials and structures on semiconductor substrates. Summary of the Invention

[0005]

[0005] One or more embodiments of the present disclosure are directed to a processing chamber, in one or more embodiments, the processing chamber including a lid and at least one sidewall defining an interior space, a remote plasma unit within the interior space, a direct plasma unit within the interior space, and at least one electrode, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma, and the other of the remote plasma unit or the direct plasma unit generates a direct plasma.

[0006]

[0006] Additional embodiments of the present disclosure are directed to a processing method. In one or more embodiments, the processing method includes exposing a substrate to a remote plasma and exposing the substrate to a direct plasma.

[0007]

[0007] Further embodiments of the present disclosure are directed to a non-transitory computer-readable medium. In one or more embodiments, the non-transitory computer-readable medium includes instructions that, when executed by a controller of a processing chamber, cause the processing chamber to perform the operations of exposing a substrate to a remote plasma and exposing a substrate to a direct plasma.

[0008]

[0008] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1A] 1 is a process flow diagram of a method according to one or more embodiments. [Figure 1B]

[0010] FIG. 1 is a process flow diagram of a method according to one or more embodiments. [Figure 2]

[0011] 1 is a schematic diagram of a processing tool according to one or more embodiments. [Figure 3]

[0012] 1 is a schematic diagram of a processing tool according to one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0013] Before describing several exemplary embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of structure or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0011]

[0014] As used herein and in the appended claims, the terms "substrate" and "wafer" are used interchangeably and both refer to a surface or portion of a surface upon which a process acts. Those skilled in the art will also understand that when reference is made to a substrate, it may refer to only a portion of the substrate, unless the context clearly indicates otherwise. Additionally, when reference is made to deposition on a substrate, it may refer to both a bare substrate and a substrate upon which one or more films or features have been deposited or formed.

[0012]

[0015] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which film processing is performed during a fabrication process. For example, substrate surfaces on which processing may be performed include materials such as silicon, silicon oxide, silicon nitride, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. Substrates can be exposed to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, electron beam (e-beam) cure, and / or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, in the present disclosure, any of the disclosed film processing steps can also be performed on underlying layers formed on the substrate, as disclosed in more detail below. The term "substrate surface" is intended to include such underlying layers, as the context indicates. Thus, for example, if a film / layer or partial film / layer is being deposited on a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0013]

[0016] Embodiments of the present disclosure relate to processing equipment and methods for semiconductor processing chambers. In one or more embodiments, the processing chamber is configured to accommodate a semiconductor substrate within a processing region of the chamber. In one or more embodiments, the processing chamber includes a remote plasma unit and a direct plasma unit, where one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. In some embodiments, a combination of the remote plasma unit and the direct plasma unit is used to remove and process residues on the substrate from previous processing and / or native oxide formation.

[0014]

[0017] 1A shows a process flow diagram of a method 100 according to one or more embodiments. In operation 102, a substrate is optionally placed in a processing chamber. In operation 104, the substrate is exposed to a remote plasma. In operation 106, the substrate is exposed to a direct plasma. In one or more embodiments, exposing the substrate to the remote plasma and exposing the substrate to the direct plasma occurs sequentially. In some embodiments, the substrate is first exposed to the remote plasma and then exposed to the direct plasma. In one or more embodiments, exposing the substrate to the remote plasma and exposing the substrate to the direct plasma occurs simultaneously.

[0015]

[0018] 1B shows a process flow diagram of method 100 according to one or more embodiments. In operation 102, a substrate is optionally placed in a processing chamber. In operation 106, the substrate is exposed to a direct plasma. In operation 104, the substrate is exposed to a remote plasma. In one or more embodiments, exposing the substrate to a direct plasma and exposing the substrate to a remote plasma occurs sequentially. In some embodiments, the substrate is first exposed to a direct plasma and then exposed to a remote plasma. In one or more embodiments, exposing the substrate to a direct plasma and exposing the substrate to a remote plasma occurs simultaneously.

[0016]

[0019] In one or more embodiments, exposing a substrate to a remote plasma and exposing the substrate to a direct plasma treats or cleans the substrate. In one or more embodiments, the substrate includes at least one feature. The at least one feature may include any feature known to those skilled in the art, including, but not limited to, a trench, a via, or a peak. In embodiments where the substrate is exposed to a remote plasma and the direct plasma treats or cleans the substrate, the treating or cleaning may, for example, remove one or more of residues from a previous process and / or native oxide. In embodiments where the substrate is exposed to a direct plasma and the remote plasma treats or cleans the substrate, the treating or cleaning may, for example, remove one or more of residues from a previous process and / or native oxide.

[0017]

[0020] In one or more embodiments, the method further includes exposing the substrate to at least one precursor to deposit a film on the substrate via a plasma-enhanced chemical vapor deposition (PECVD) process or a plasma-enhanced atomic layer deposition (PEALD) process. Any suitable precursor known to those skilled in the art can be used to form a film on the substrate.

[0018]

[0021] FIG. 2 illustrates a processing tool 200 according to one or more embodiments. In one or more embodiments, the processing tool 200 includes a processing chamber 201. The processing chamber includes a lid 202 and at least one sidewall 204. In one or more embodiments, the lid 202 and the at least one sidewall 204 define an interior space 205 of the processing chamber 201. In one or more embodiments, the processing tool 200 includes a remote plasma unit 206 within the interior space 205 of the processing chamber 201. In one or more embodiments, a direct plasma unit 208 is within the interior space 205 of the processing chamber 201. In one or more embodiments, one of the remote plasma units 206 generates a remote plasma, and the direct plasma unit 208 generates a direct plasma. In one or more embodiments, the remote plasma generation and the direct plasma generation occur sequentially. In some embodiments, the remote plasma generation occurs first, followed by the direct plasma generation. In other embodiments, the direct plasma generation occurs first, followed by the remote plasma generation. In one or more embodiments, the remote plasma generation and the direct plasma generation occur simultaneously.

[0019]

[0022] In one or more embodiments, an ion filter 212 separates the remote plasma unit 206 and the direct plasma unit 208. In one or more embodiments, the ion filter 212 is used to filter ions from the plasma effluent during its transition from the remote plasma unit 206 to the substrate processing region 215. In one or more embodiments, the ion filter 212 functions to reduce or eliminate ionic charged species migrating from the remote plasma unit 206 to the substrate 230. In one or more embodiments, uncharged neutral species and radical species may pass through at least one aperture 218 in the ion filter 212 and react at the substrate 230. It should be noted that completely eliminating ionic charged species in the reaction region 215 surrounding the substrate 230 is not necessarily a desired goal. In one or more embodiments, ionic species are required to reach the substrate 230 in order to perform etching and / or deposition processes. In such cases, the ion filter 212 helps control the concentration of ionic species in the reaction region 215 at a level that supports the processing / cleaning and / or deposition processes.

[0020]

[0023] In one or more embodiments, the processing tool includes at least one electrode within the processing chamber. In one or more embodiments, the at least one electrode is located within the interior volume 205 of the processing chamber 201. In the embodiment shown in FIG. 2, the at least one electrode 210 is positioned in electrical communication with the remote plasma unit 206.

[0021]

[0024] In one or more embodiments, the processing chamber 201 includes a pedestal 214. In one or more embodiments, the pedestal 214 is configured to support a semiconductor substrate 230 within the processing region 215. In one or more embodiments, the pedestal 214 may include heat exchange channels (not shown) through which a heat exchange fluid flows to control the temperature of the substrate 230. In one or more embodiments, the temperature of the substrate 230 may be cooled or heated to maintain a relatively low temperature, such as from about −20° C. to about 400° C. In one or more embodiments, the heat exchange fluid includes one or more of ethylene glycol or water. In other embodiments, the pedestal 214 is resistively heated to achieve a relatively high temperature, such as from about 100° C. to about 1100° C., or from about 200° C. to about 750° C., using an embedded resistive heater element (not shown). In one or more embodiments, the pedestal 214 is configured to rotate. In one or more embodiments, the pedestal 214 includes an electrode 216 within the interior of the pedestal 214, and the pedestal 214 is powered by an RF generator 250 and matched by an RF match 240. In one or more embodiments, the pedestal 214 is made of a metallic material and is itself an electrode.

[0022]

[0025] In one or more embodiments, at least one power source, such as an RF generator, 250 is electrically connected to the processing chamber 201 via a first RF match 240 and a second RF match 245 .

[0023]

[0026] In one or more embodiments, two RF generators 250 are electrically connected to the processing chamber 201. In such embodiments, a first RF generator 250 is electrically connected to the pedestal electrode 216, and a second RF generator 255 is electrically connected to the upper electrode 210.

[0024]

[0027] In one or more embodiments, plasma is generated using a radio frequency (RF) power remote plasma unit 206 and / or a direct plasma unit 208. In one or more embodiments, alternating current (AC) power is rectified and switched to provide current to an RF amplifier. The RF amplifier operates at a reference frequency (e.g., 13.56 MHz) and drives the current through an output match network, then through a power measurement circuit, and to the output of the power supply. The output match is typically designed to connect a generator optimized to drive a specific impedance, such as 50 ohms, to have the same characteristic impedance as coaxial cables commonly used in the industry. Power flows through the matched cable section, is measured by a match controller, and is converted through a load match. Because the load match is typically an electronic auto-tuner, the load match operation is subject to a predetermined time delay before the system is properly configured. After passing through the load match, the power is then directed to a plasma excitation circuit that drives two electrodes within the evacuated processing chamber. Process gases are introduced into the evacuated processing chamber and, when driven by the circuit, generate plasma. Since the match network or load match is electrically driven, the response time from the match network is typically on the order of one second or more.

[0025]

[0028] In some embodiments, the plasma power is in the range of about 10 W to about 1000 W, including about 200 W to about 600 W. In some embodiments, the plasma power is about 1000 W or less, or about 6500 W or less.

[0026]

[0029] The plasma frequency can be any suitable frequency. In some embodiments, the plasma has a frequency ranging from about 200 kHz to about 30 MHz. In some embodiments, the plasma frequency is about 20 MHz or less, about 10 MHz or less, about 5 MHz or less, about 1000 kHz or less, or about 500 kHz or less. In some embodiments, the plasma frequency is about 210 kHz or more, about 250 kHz or more, about 600 kHz or more, about 750 MHz or more, about 1200 kHz or more, about 2 MHz or more, about 4 MHz or more, about 7 MHz or more, about 12 MHz or more, about 15 MHz or more, or about 25 MHz or more. In one or more embodiments, the plasma has a frequency of about 13.56 MHz, or about 350 kHz, or about 400 kHz, or about 27 MHz, or about 40 MHz, or about 60 MHz.

[0027]

[0030] In one or more embodiments, a controller 220 may be provided and coupled to control the operation of various components of the processing tool 200. The controller 220 may be a single controller that controls the entire processing tool 200, or multiple controllers that control individual portions of the processing tool 200. For example, the processing tool 200 may include a separate controller for each of the processing chamber 202, the remote plasma unit 206, the direct plasma unit 208, and the power source 250.

[0028]

[0031] In some embodiments, the processing chamber 201 further comprises a controller 220. In one or more embodiments, the controller 220 controls the ignition of a plasma by the remote plasma unit 206 and / or the direct plasma unit 208 in the processing chamber 201.

[0029]

[0032] In some embodiments, the controller 220 includes a central processing unit (CPU) 222, memory 224, input / output (I / O) 226, and support circuits 228. The controller 220 may control the processing tool 200 directly or through computers (or controllers) associated with particular processing chambers and / or support system components.

[0030]

[0033] The controller 220 can be one of any form of general-purpose computer processor that can be used in an industrial environment to control various chambers and sub-processors. The memory 224 or computer-readable medium of the controller 220 can be one or more of readily available memory, such as non-transitory memory (e.g., random access memory (RAM)), read-only memory (ROM), a floppy disk, a hard disk, an optical storage medium (e.g., a compact disk or digital video disk), a flash drive, or any other form of digital storage, local or remote. The memory 224 can hold a set of instructions operable by the processor (CPU 222) to control parameters and components of the processing tool 200.

[0031]

[0034] The support circuits 228 are coupled to the CPU 222 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. One or more processes may be stored in the memory 224 as software routines that, when executed or invoked by the processor, cause the processor to control the operation of the processing tool 200 or individual processing units (e.g., the remote plasma unit 206 and the direct plasma unit 208) in the manner described herein. The software routines may also be stored and / or executed by a second CPU (not shown) located remotely from the hardware controlled by the CPU 222.

[0032]

[0035] Some or all of the processes and methods of the present disclosure may also be implemented in hardware. Thus, the processes may be implemented in software and executed using a computer system, in hardware, for example, as an application specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. The software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller) that controls chamber operation so that processes are performed.

[0033]

[0036] In some embodiments, the controller 220 has one or more components for performing individual processes or subprocesses to implement the method. The controller 220 may be connected to and configured to operate intermediate components to perform the functions of the method. For example, the controller 220 may be connected to and configured to control one or more of the remote plasma unit 206, the direct plasma unit 208, the pedestal 214, at least one electrode, or other components.

[0034]

[0037] FIG. 3 illustrates a processing tool 300 according to one or more embodiments. In one or more embodiments, the processing tool 300 includes a processing chamber 301. The processing chamber includes a lid 302 and at least one sidewall 304. In one or more embodiments, the lid 302 and the at least one sidewall 304 define an interior space 305 of the processing chamber 301. In one or more embodiments, the processing tool 300 includes a remote plasma unit 306 within the interior space 305 of the processing chamber 301. In one or more embodiments, a direct plasma unit 308 is within the interior space 305 of the processing chamber 301. In one or more embodiments, one of the remote plasma units 306 generates a remote plasma, and the direct plasma unit 308 generates a direct plasma. In one or more embodiments, the remote plasma generation and the direct plasma generation occur sequentially. In some embodiments, the remote plasma generation occurs first, followed by the direct plasma generation. In other embodiments, the direct plasma generation occurs first, followed by the remote plasma generation. In one or more embodiments, the remote plasma generation and the direct plasma generation occur simultaneously.

[0035]

[0038] In one or more embodiments, an ion filter 312 separates the remote plasma unit 306 and the direct plasma unit 308. In one or more embodiments, the ion filter 312 is used to filter ions from the plasma effluent during its transition from the remote plasma unit 306 to the substrate processing region 315. In one or more embodiments, the ion filter 312 functions to reduce or eliminate ionic charged species migrating from the remote plasma unit 306 to the substrate 330. In one or more embodiments, uncharged neutral species and radical species may pass through at least one aperture 318 in the ion filter 312 and react at the substrate 330. It should be noted that completely eliminating ionic charged species in the reaction region 315 surrounding the substrate 330 is not necessarily a desired goal. In one or more embodiments, ionic species are required to reach the substrate 330 in order to perform etching and / or deposition processes. In such cases, the ion filter 312 helps control the concentration of ionic species in the reaction region 315 at a level that supports the processing / cleaning and / or deposition processes.

[0036]

[0039] In one or more embodiments, the ion filter 312 comprises a showerhead.

[0037]

[0040] In one or more embodiments, the processing tool includes at least one electrode within the processing chamber. In one or more embodiments, the at least one electrode is located within the interior volume 305 of the processing chamber 301. In the embodiment shown in FIG. 3, the at least one electrode 316 is positioned in electrical communication with the pedestal 314.

[0038]

[0041] In one or more embodiments, the processing chamber 301 includes a pedestal 314. In one or more embodiments, the pedestal 314 is configured to support a semiconductor substrate 330 within the processing region 315. In one or more embodiments, the pedestal 314 may include heat exchange channels (not shown) through which a heat exchange fluid flows to control the temperature of the substrate 330. In one or more embodiments, the temperature of the substrate 330 may be cooled or heated to maintain a relatively low temperature, such as from about −20° C. to about 400° C., or from about 0° C. to about 400° C. In one or more embodiments, the heat exchange fluid includes one or more of ethylene glycol or water. In other embodiments, the pedestal 314 is resistively heated to achieve a relatively high temperature, such as from about 100° C. to about 1100° C., or from about 200° C. to about 750° C., using an embedded resistive heater element (not shown). In one or more embodiments, the pedestal 314 is configured to rotate. In one or more embodiments, the pedestal 314 includes an electrode 316 within the interior of the pedestal 314, and the pedestal 314 is powered by an RF generator 350 and matched by an RF match 340. In one or more embodiments, the pedestal 314 is made of a metallic material and is itself an electrode.

[0039]

[0042] In one or more embodiments, at least one power source, such as an RF generator, 350 is electrically connected to the processing chamber 301 via an RF match 340 .

[0040]

[0043] In one or more embodiments, two RF generators are electrically connected to the processing chamber 301. In such embodiments, a first RF generator 350 is electrically connected to the pedestal electrode 316, and a second RF generator 355 is electrically connected to the inductively coupled plasma (ICP) coil 370.

[0041]

[0044] In one or more embodiments, plasma is generated using a radio frequency (RF) power remote plasma unit 306 and a direct plasma unit 308. In one or more embodiments, alternating current (AC) power is rectified and switched to provide current to an RF amplifier. The RF amplifier operates at a reference frequency (e.g., 13.56 MHz) and drives the current through an output match network, then through a power measurement circuit, and to the output of the power supply. The output match is typically designed to connect a generator optimized to drive a specific impedance, such as 50 ohms, to have the same characteristic impedance as coaxial cables commonly used in the industry. Power flows through the matched cable section, is measured by a match controller, and is converted through a load match. Because the load match is typically an electronic auto-tuner, the load match operation is subject to a predetermined time delay before the system is properly configured. After passing through the load match, the power is then directed to a plasma excitation circuit that drives two electrodes within the evacuated processing chamber. Process gases are introduced into the evacuated processing chamber and, when driven by the circuit, generate plasma. Since the match network or load match is electrically driven, the response time from the match network is typically on the order of one second or more.

[0042]

[0045] In some embodiments, the plasma power is in the range of about 10 W to about 1000 W, including about 200 W to about 600 W. In some embodiments, the plasma power is about 1000 W or less, or about 6500 W or less.

[0043]

[0046] The plasma frequency can be any suitable frequency. In some embodiments, the plasma has a frequency ranging from about 200 kHz to about 30 MHz. In some embodiments, the plasma frequency is about 20 MHz or less, about 10 MHz or less, about 5 MHz or less, about 1000 kHz or less, or about 500 kHz or less. In some embodiments, the plasma frequency is about 210 kHz or more, about 250 kHz or more, about 600 kHz or more, about 750 MHz or more, about 1200 kHz or more, about 2 MHz or more, about 4 MHz or more, about 7 MHz or more, about 12 MHz or more, about 15 MHz or more, or about 25 MHz or more. In one or more embodiments, the plasma has a frequency of about 13.56 MHz, or about 350 kHz, or about 400 kHz, or about 27 MHz, or about 40 MHz, or about 60 MHz.

[0044]

[0047] In one or more embodiments, a controller 320 may be provided and coupled to control the operation of various components of the processing tool 300. The controller 320 may be a single controller that controls the entire processing tool 300, or multiple controllers that control individual portions of the processing tool 300. For example, the processing tool 300 may include a separate controller for each of the processing chamber 301, the remote plasma unit 306, the direct plasma unit 308, and the power source 350.

[0045]

[0048] In some embodiments, the processing chamber 301 further comprises a controller 320. In one or more embodiments, the controller 320 controls the ignition of plasma by the remote plasma unit 306 and / or the direct plasma unit 308 in the processing chamber 301.

[0046]

[0049] In some embodiments, the controller 320 includes a central processing unit (CPU) 322, memory 324, input / output (I / O) 326, and support circuits 328. The controller 320 may control the processing tool 300 directly or through computers (or controllers) associated with particular processing chambers and / or support system components.

[0047]

[0050] The controller 320 can be one of any form of general-purpose computer processor that can be used in an industrial environment to control various chambers and sub-processors. The memory 324 or computer-readable medium of the controller 320 can be one or more of readily available memory, such as non-transitory memory (e.g., random access memory (RAM)), read-only memory (ROM), a floppy disk, a hard disk, an optical storage medium (e.g., a compact disk or digital video disk), a flash drive, or any other form of digital storage, local or remote. The memory 324 can hold a set of instructions operable by the processor (CPU 322) to control parameters and components of the processing tool 300.

[0048]

[0051] The support circuits 328 are coupled to the CPU 322 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. One or more processes may be stored in the memory 324 as software routines that, when executed or invoked by the processor, cause the processor to control the operation of the processing tool 300 or individual processing units (e.g., the remote plasma unit 306 and the direct plasma unit 308) in the manner described herein. The software routines may also be stored and / or executed by a second CPU (not shown) located remotely from the hardware controlled by the CPU 322.

[0049]

[0052] Some or all of the processes and methods of the present disclosure may also be implemented in hardware. Thus, the processes may be implemented in software and executed using a computer system, in hardware, for example, as an application specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. The software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller) that controls chamber operation so that processes are performed.

[0050]

[0053] In some embodiments, the controller 320 has one or more components for performing individual processes or subprocesses to implement the method. The controller 320 may be connected to and configured to operate intermediate components to perform the functions of the method. For example, the controller 320 may be connected to and configured to control one or more of the remote plasma unit 306, the direct plasma unit 308, the pedestal 314, the at least one electrode 316, the ICP coil 370, or other components.

[0051]

[0054] One or more embodiments are directed to a non-transitory computer-readable medium comprising instructions that, when executed by a controller of a processing chamber, cause the processing chamber to perform the operations of exposing a substrate to a remote plasma and exposing a substrate to a direct plasma. In one or more embodiments, the non-transitory computer-readable medium comprising instructions, when executed by a controller of a processing chamber, cause the processing chamber to perform the operations of exposing a substrate to at least one precursor to form a film on the substrate.

[0052]

[0055] Throughout this specification, references to "one embodiment," "a particular embodiment," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of phrases such as "in one or more embodiments," "in a particular embodiment," "in one embodiment," or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0053]

[0056] Although the disclosure herein has been described with reference to particular embodiments, those skilled in the art will recognize that the described embodiments are merely illustrative of the principles and applications of the disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed method and apparatus without departing from the spirit and scope of the disclosure. Accordingly, the disclosure may include modifications and variations that come within the scope of the appended claims and their equivalents.

Claims

1. 1. A processing chamber comprising: a lid and sidewalls defining an interior space; a remote plasma unit within the interior space; a direct plasma unit within the interior space; At least one electrode; wherein the remote plasma unit generates a remote plasma and the direct plasma unit generates a direct plasma.

2. 10. The processing chamber of claim 1, further comprising an ion filter separating the remote plasma unit and the direct plasma unit.

3. The processing chamber of claim 2 , wherein the ion filter comprises a plurality of apertures.

4. The processing chamber of claim 3 , wherein the ion filter is a showerhead.

5. The processing chamber of claim 1 further comprising a pedestal.

6. The processing chamber of claim 5 , wherein the pedestal comprises the at least one electrode.

7. The processing chamber of claim 5 , wherein the at least one electrode is positioned in electrical communication with the remote plasma unit.

8. The processing chamber of claim 1 , further comprising an inductively coupled plasma (ICP) coil.

9. The processing chamber of claim 8 , wherein the ICP coil is positioned in electrical communication with the remote plasma unit.

10. The processing chamber of claim 1 further comprising a controller.

11. 11. The processing chamber of claim 10, wherein the controller comprises one or more of a central processing unit (CPU), memory, input / output (I / O), and support circuits.

12. exposing the substrate to a remote plasma; and exposing the substrate to a direct plasma A processing method comprising:

13. 13. The processing method of claim 12, wherein exposing the substrate to the remote plasma and exposing the substrate to the direct plasma occurs sequentially.

14. 13. The processing method of claim 12, wherein exposing the substrate to the remote plasma and exposing the substrate to the direct plasma occur simultaneously.

15. 13. The processing method of claim 12, wherein exposing the substrate to the remote plasma and exposing the substrate to the direct plasma cleans or processes the substrate.

16. 13. The method of claim 12, further comprising exposing the substrate to at least one precursor to form a film on the substrate.

17. The method of claim 12 , wherein the substrate comprises one or more of a trench, a via, or a peak.

18. 20. The method of claim 17, wherein the substrate includes one or more of a residue or a native oxide thereon.

19. 1. A non-transitory computer-readable medium containing instructions that, when executed by a controller of a processing chamber, cause the processing chamber to: exposing the substrate to a remote plasma; and exposing the substrate to a direct plasma A non-transitory computer-readable medium for causing the operations of

20. a non-transitory computer readable medium including instructions that, when executed by a controller of a processing chamber, cause the processing chamber to: exposing the substrate to at least one precursor to form a film on the substrate; 20. The non-transitory computer-readable medium of claim 19, causing the operations of:

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