Power module

Abstract

To provide a power module which can be stably operated.SOLUTION: In a power module 1A, a plurality of second power semiconductor elements 40B is provided in a second loading layer 14A while being arrayed in one direction. A plurality of second control side connection members 32B and second drive side connection members 33B is provided correspondingly to the plurality of second power semiconductor elements 40B. When a path between a gate electrode 43 of the second power semiconductor element 40B and a second control terminal 53B is defined as a third conductive path and a path between a source electrode 42 of the second power semiconductor element 40B and a second detection terminal 54B is defined as a fourth conductive path, at least one of a second control layer 25 (26) and a second drive layer 27 (28) includes a second detour part 27b (26b) which takes a detour in such a manner that a sum of a length of the third conductive path and a length of the fourth conductive path becomes close to each other between the plurality of second power semiconductor elements 40B.SELECTED DRAWING: Figure 17

Description

[Technical Field]

[0001] The present disclosure relates to a power module. [Background technology]

[0002] As an example of the power module, a power module configured as an inverter device is known (see, for example, Patent Document 1). This power module includes power semiconductor elements made up of transistors such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-38803

[0004] [overview] Power modules designed to supply large currents may be configured by connecting a first element group, in which multiple power semiconductor elements are connected in parallel, in series with a second element group, in which multiple power semiconductor elements are connected in parallel. A control voltage is supplied to the control terminals of the multiple power semiconductor elements constituting the first element group from one control terminal of the power module, and a control voltage is supplied to the control terminals of the multiple power semiconductor elements constituting the second element group from another control terminal of the power module. In this case, for example, variations in the inductance value between the control electrode of each power semiconductor element and the control terminal of the power module occur depending on the arrangement of the power semiconductor elements constituting the first element group. This can lead to variations in the on / off timing of the multiple power semiconductor elements, resulting in unstable operation. The power semiconductor elements in the second element group may also experience the same problems as those of the power semiconductor elements in the first element group.

[0005] A power module according to one aspect of the present disclosure includes an electrically insulating substrate having a substrate main surface and a substrate back surface facing opposite each other in a thickness direction, and a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each of which is electrically conductive and formed on the substrate main surface. The power module further includes a first power semiconductor element mounted on the first mounting layer, the first power semiconductor element having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a control electrode formed on a first element main surface. The power module further includes a second power semiconductor element mounted on the second mounting layer, the second power semiconductor element having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, a second drive electrode electrically connected to a second input terminal, and a control electrode formed on a second element main surface. The power module further includes a first control-side connecting member connecting a control electrode of the first power semiconductor element to the first control layer, a first drive-side connecting member connecting a second drive electrode of the first power semiconductor element to the first drive layer, a second control-side connecting member connecting a control electrode of the second power semiconductor element to the second control layer, a second drive-side connecting member connecting a second drive electrode of the second power semiconductor element to the second drive layer, a first control terminal electrically connected to the first control layer, a second control terminal electrically connected to the second control layer, a first detection terminal electrically connected to the first drive layer, and a second detection terminal electrically connected to the second drive layer. A plurality of the second power semiconductor elements are provided on the second mounting layer and arranged in one direction as viewed in the thickness direction. A plurality of the second control-side connecting members and second drive-side connecting members are provided corresponding to the plurality of second power semiconductor elements. A path between the control electrode of the second power semiconductor element and the second control terminal is a third conductive path, a path between the second drive electrode of the second power semiconductor element and the second detection terminal is a fourth conductive path, and at least one of the second control layer and the second drive layer has a second detour portion that detours so that the sum of the length of the third conductive path and the length of the fourth conductive path are close to each other between the multiple second power semiconductor elements.

[0006] A power module according to one aspect of the present disclosure includes an electrically insulating substrate having a substrate main surface and a substrate back surface facing opposite each other in a thickness direction, and a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each of which is electrically conductive and formed on the substrate main surface. The power module further includes a plurality of first power semiconductor elements mounted on the first mounting layer and arranged in one direction as viewed from the thickness direction, the first power semiconductor elements having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, and a first element main surface on which a second drive electrode electrically connected to an output terminal and a control electrode are formed. The power module further includes a plurality of second power semiconductor elements mounted on the second mounting layer and arranged in the one direction, the second power semiconductor elements having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, and a second element main surface on which a second drive electrode electrically connected to a second input terminal and a control electrode are formed. The power module further includes a plurality of first control-side connecting members connecting control electrodes of the plurality of first power semiconductor elements to the first control layer and aligned in the same direction as the arrangement direction of the plurality of first power semiconductor elements, a plurality of first drive-side connecting members connecting second drive electrodes of the plurality of first power semiconductor elements to the first drive layer and aligned in the same direction as the arrangement direction of the plurality of first power semiconductor elements, a plurality of second control-side connecting members connecting control electrodes of the plurality of second power semiconductor elements to the second control layer and aligned in the same direction as the arrangement direction of the plurality of second power semiconductor elements, and a plurality of second drive-side connecting members connecting second drive electrodes of the second power semiconductor elements to the second drive layer and aligned in the same direction as the arrangement direction of the plurality of second power semiconductor elements. The power module further includes a first control terminal electrically connected to the first control layer, a second control terminal electrically connected to the second control layer, a first detection terminal electrically connected to the first drive layer, and a second detection terminal electrically connected to the second drive layer.the plurality of second power semiconductor elements include a first-end power semiconductor element and a second-end power semiconductor element located at opposite ends in an arrangement direction of the plurality of second power semiconductor elements, wherein a path between the control electrode and the second control terminal of the first-end power semiconductor element is defined as a third-end control-side conductive path, a path between the second drive electrode and the second detection terminal of the first-end power semiconductor element is defined as a third-end drive-side conductive path, a sum of a length of the third-end control-side conductive path and a length of the third-end drive-side conductive path is defined as a third sum, a path between the control electrode and the second control terminal of the second-end power semiconductor element is defined as a fourth-end control-side conductive path, a path between the second drive electrode and the second detection terminal of the second power semiconductor element is defined as a fourth-end drive-side conductive path, and a sum of a length of the fourth-end control-side conductive path and a length of the fourth-end drive-side conductive path is defined as a fourth sum, and at least one of the second control layer and the second drive layer has a second detour section that detours the conductive path so that the third sum approaches the fourth sum. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view of a power module according to a first embodiment. [Figure 2] FIG. 2 is a plan view of the power module of FIG. [Figure 3] FIG. 3 is a side view of the power module of FIG. [Figure 4] FIG. 4 is a side view of the power module of FIG. 1, seen from a direction different from that of FIG. [Figure 5] FIG. 5 is a side view of the power module of FIG. 1, seen from a direction different from that of FIGS. [Figure 6] FIG. 6 is a bottom view of the power module of FIG. [Figure 7] FIG. 7 is a plan view showing the internal structure of the power module of FIG. [Figure 8] FIG. 8 is a circuit diagram showing the circuit configuration of the power module of FIG. [Figure 9] FIG. 9 is a cross-sectional view taken along line 9-9 in FIG. [Figure 10]FIG. 10 is a cross-sectional view taken along line 10-10 in FIG. [Figure 11] FIG. 11 is an enlarged view of a portion of FIG. [Figure 12] FIG. 12 is an enlarged view of a portion of FIG. [Figure 13] FIG. 13 is an enlarged view of a portion of FIG. [Figure 14] FIG. 14 is an enlarged view of a portion of FIG. [Figure 15] FIG. 15 is an enlarged view of a portion of FIG. [Figure 16] FIG. 16 is an enlarged view of a portion of FIG. [Figure 17] FIG. 17 is an enlarged view of a portion of FIG. [Figure 18] FIG. 18 is an enlarged view of a portion of FIG. [Figure 19] FIG. 19 is an enlarged view of a portion of FIG. [Figure 20] FIG. 20 is a plan view showing the internal structure of a power module of a comparative example. [Figure 21] FIG. 21 is an enlarged view of a portion of FIG. [Figure 22] FIG. 22 is an enlarged view of a portion of FIG. [Figure 23] FIG. 23 is a graph showing the relationship between each power semiconductor element and the inductance value of each power semiconductor element for the power module of the first embodiment and the power module of the comparative example. [Figure 24] FIG. 24 is a graph showing an example of a voltage applied to a gate electrode of a predetermined power semiconductor element of a power module of a comparative example. [Figure 25] FIG. 25 is a graph showing an example of a voltage applied to a gate electrode of a predetermined power semiconductor element of the power module of this embodiment. [Figure 26] FIG. 26 is a plan view showing the internal structure of the power module of the second embodiment. [Figure 27] 27 is an enlarged view of a portion of FIG. 26. FIG. [Figure 28]FIG. 28 is an enlarged view of a portion of FIG. [Figure 29] FIG. 29 is an enlarged view of a portion of FIG. [Figure 30] FIG. 30 is an enlarged view of a portion of FIG. [Figure 31] FIG. 31 is an enlarged view of a portion of FIG. [Figure 32] FIG. 32 is an enlarged view of a portion of FIG. [Figure 33] FIG. 33 is a circuit diagram of a three-phase AC inverter to which the power module is applied. [Figure 34] FIG. 34 is a circuit diagram of a three-phase AC inverter to which the power module is applied. [Figure 35] FIG. 35 is an enlarged plan view of a part of the internal structure of the power module according to the modified example. [Figure 36] FIG. 36 is an enlarged plan view of a part of the internal structure of the power module according to the modified example. [Figure 37] FIG. 37 is an enlarged plan view of a part of the internal structure of the power module according to the modified example. [Figure 38] FIG. 38 is an enlarged plan view of a part of the internal structure of the power module according to the modified example. [Figure 39] FIG. 39 is a plan view of a first power semiconductor element in a power module according to a modified example.

[0008] [Detailed explanation] Hereinafter, embodiments of a power module will be described with reference to the drawings. The embodiments shown below are intended to exemplify configurations and methods for embodying the technical ideas, and are not intended to limit the materials, shapes, structures, arrangements, dimensions, etc. of the components to those described below. Various modifications can be made to the following embodiments.

[0009] [First embodiment] A power module 1A of the first embodiment will be described with reference to FIGS. 1 to 6 show the external appearance of the power module 1 A. Fig. 7 shows the internal structure of the power module 1 A. In Fig. 9, the case 80 and the terminals 50 are omitted for the sake of convenience.

[0010] As shown in FIGS. 1 to 7, the power module 1A mainly includes a substrate 10, a connecting member 30, a power semiconductor element 40, a terminal 50, a sealing resin 60 (see FIG. 10), a heat sink 70, and a case 80 that accommodates these. The power module 1A is configured to be able to supply a current of, for example, 300 A or more and 1000 A or less. Note that, for convenience, the sealing resin 60 is omitted from FIG. 7. As shown in FIGS. 1 to 7, the substrate 10, the connecting member 30, the power semiconductor element 40, and the sealing resin 60 are respectively accommodated by the heat sink 70 and the case 80 and are not exposed to the outside. Meanwhile, the terminals 50 are accommodated in the case 80 with a portion exposed or protruding from the outside of the case 80. The power module 1A is used, for example, in an inverter device. As shown in FIGS. 1, 2, and 7, the power module 1A has a rectangular shape when viewed in the thickness direction of the substrate 10 (hereinafter referred to as a "plan view"). For ease of explanation, the direction along the thickness direction of the substrate 10 is referred to as the "thickness direction Z," and two mutually orthogonal directions among directions orthogonal to the thickness direction Z are referred to as the "horizontal direction X" and the "vertical direction Y." In this embodiment, the long side direction of the power module 1A is the horizontal direction X, and the short side direction is the vertical direction Y.

[0011] Fig. 8 shows the circuit configuration of a power module 1A of this embodiment. The power module 1A has a first power semiconductor element group 40AT consisting of a plurality of first power semiconductor elements 40A as power semiconductor elements 40, and a second power semiconductor element group 40BT consisting of a plurality of second power semiconductor elements 40B. For convenience, Fig. 8 shows one first power semiconductor element 40A as the first power semiconductor element group 40AT, and one second power semiconductor element 40B as the second power semiconductor element group 40BT.

[0012] Each of the first power semiconductor elements 40A of the first power semiconductor element group 40AT and each of the second power semiconductor elements 40B of the second power semiconductor element group 40BT are used as a switching element. Each of the power semiconductor elements 40A, 40B is a transistor made of, for example, Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or Ga2O3 (gallium oxide). When each of the power semiconductor elements 40A, 40B is made of SiC, it is suitable for high-speed switching. In this embodiment, each of the power semiconductor elements 40A, 40B is an N-type MOSFET made of SiC. Each of the power semiconductor elements 40A, 40B is not limited to a MOSFET, but may be a field-effect transistor such as a MISFET (Metal-Insulator-Semiconductor FET) or a bipolar transistor such as an IGBT. Each of the power semiconductor elements 40A, 40B may be an N-channel MOSFET or a P-channel MOSFET.

[0013] Each of the power semiconductor elements 40A, 40B has a drain electrode 41, a source electrode 42, and a gate electrode 43. Each of the power semiconductor elements 40A, 40B also has a body diode 44. Although not shown in FIG. 8 , the first power semiconductor elements 40A of the first power semiconductor element group 40AT are connected in parallel with each other. That is, the drain electrodes 41 of the first power semiconductor elements 40A are connected to each other, and the source electrodes 42 of the first power semiconductor elements 40A are connected to each other. Furthermore, the second power semiconductor elements 40B of the second power semiconductor element group 40BT are connected in parallel with each other. That is, the drain electrodes 41 of the second power semiconductor elements 40B are connected to each other, and the source electrodes 42 of the second power semiconductor elements 40B are connected to each other. The first power semiconductor element group 40AT and the second power semiconductor element group 40BT are connected in series with each other. Specifically, the source electrodes 42 of the first power semiconductor element group 40AT (the source electrodes 42 of the plurality of first power semiconductor elements 40A) are electrically connected to the drain electrodes 41 of the second power semiconductor element group 40BT (the drain electrodes 41 of the plurality of second power semiconductor elements 40B). As described above, in this embodiment, the power module 1A forms an inverter circuit, the first power semiconductor element group 40AT forms an upper arm, and the second power semiconductor element group 40BT forms a lower arm.

[0014] The drain electrodes 41, source electrodes 42, and gate electrodes 43 of the plurality of first power semiconductor elements 40A of the first power semiconductor element group 40AT and the plurality of second power semiconductor elements 40B of the second power semiconductor element group 40BT are each connected to a terminal 50.

[0015] 1, 2, and 8, the terminals 50 include a first input terminal 51A, a second input terminal 51B, a first output terminal 52A, a second output terminal 52B, a first control terminal 53A, a second control terminal 53B, a first detection terminal 54A, a second detection terminal 54B, a power supply current terminal 55, and a pair of temperature detection terminals 56. Note that the pair of temperature detection terminals 56 are not electrically connected to the power semiconductor elements 40A and 40B, and are therefore not shown in FIG. 8 for convenience.

[0016] The first input terminal 51A is electrically connected to the drain electrode 41 of the first power semiconductor element group 40AT. That is, the first input terminal 51A is electrically connected to each of the drain electrodes 41 of the multiple first power semiconductor elements 40A. The second input terminal 51B is electrically connected to the source electrode 42 of the second power semiconductor element group 40BT. That is, the second input terminal 51B is electrically connected to each of the source electrodes 42 of the multiple second power semiconductor elements 40B. Each of the output terminals 52A, 52B is electrically connected to a node N1 between the source electrode 42 of the first power semiconductor element group 40AT and the drain electrode 41 of the second power semiconductor element group 40BT. That is, each of the output terminals 52A, 52B is electrically connected to the node N1 between the source electrode 42 of the multiple first power semiconductor elements 40A and the drain electrode 41 of the multiple second power semiconductor elements 40B. The first control terminal 53A is electrically connected to the gate electrode 43 of the first power semiconductor element group 40AT. That is, the first control terminal 53A is electrically connected to each of the gate electrodes 43 of the plurality of first power semiconductor elements 40A. The second control terminal 53B is electrically connected to the gate electrode 43 of the second power semiconductor element group 40BT. That is, the second control terminal 53B is electrically connected to each of the gate electrodes 43 of the plurality of second power semiconductor elements 40B. The first detection terminal 54A is electrically connected to the source electrode 42 of the first power semiconductor element group 40AT. That is, the first detection terminal 54A is electrically connected to each of the source electrodes 42 of the plurality of first power semiconductor elements 40A. The second detection terminal 54B is electrically connected to the source electrode 42 of the second power semiconductor element group 40BT. That is, the second detection terminal 54B is electrically connected to each of the source electrodes 42 of the plurality of second power semiconductor elements 40B. The power supply current terminal 55 is electrically connected to a node N2 between the drain electrode 41 of the first power semiconductor element group 40AT and the first input terminal 51A. That is, the power supply current terminal 55 is electrically connected to a node N2 between each of the drain electrodes 41 of the plurality of first power semiconductor elements 40A and the first input terminal 51A.In this embodiment, the control terminals 53A, 53B, the detection terminals 54A, 54B, the power supply current terminal 55, and the pair of temperature detection terminals 56 are electrically connected to a control circuit (not shown) provided outside the power module 1A.

[0017] As shown in FIGS. 1 and 2, the terminals 51A, 51B, 52A, 52B, 53A, 53B, 54A, 54B, 55, and 56 are provided in a case 80. 1, 2, and 7, the case 80 is formed in a frame shape in a plan view that surrounds the substrate 10, the connection member 30, and the power semiconductor element 40. The case 80 is made of a synthetic resin that has electrical insulation properties and excellent heat resistance, such as PPS (polyphenylene sulfide). The case 80 includes a pair of side walls 81A, 81B, a pair of terminal seats 82A, 82B, a plurality of mounting portions 83, a power terminal block 84, and an output terminal block 85.

[0018] As shown in FIGS. 2, 6, and 7, in a plan view, the pair of side walls 81A, 81B are spaced apart from each other in the vertical direction Y and extend along the horizontal direction X. As shown in FIGS. 3 and 5, in a side view, the pair of side walls 81A, 81B each extend along the thickness direction Z. As shown in FIGS. 2 and 7, a first control terminal 53A, a first detection terminal 54A, a power supply current terminal 55, and a pair of temperature detection terminals 56 are disposed inside the side wall 81A. The first control terminal 53A, the first detection terminal 54A, the power supply current terminal 55, and the pair of temperature detection terminals 56 are each supported by the side wall 81A. As shown in FIGS. 1 and 3, the first control terminal 53A, the first detection terminal 54A, the power supply current terminal 55, and the pair of temperature detection terminals 56 each protrude from the side wall 81A in the thickness direction Z. As shown in FIGS. 2 and 7, the second control terminal 53B and the second detection terminal 54B are disposed inside the side wall 81B. The second control terminal 53B and the second detection terminal 54B are supported by the side wall 81B. As shown in FIGS. 1 and 3, the second control terminal 53B and the second detection terminal 54B protrude from the side wall 81B in the thickness direction Z. Each of the control terminals 53A, 53B, each of the detection terminals 54A, 54B, the power supply current terminal 55, and the pair of temperature detection terminals 56 are each made of a metal rod made of, for example, copper (Cu). The surface of this metal rod is plated with tin (Sn). Nickel plating may be applied between the surface of the metal rod and the tin plating. Each control terminal 53A, 53B, each detection terminal 54A, 54B, power supply current terminal 55, and a pair of temperature detection terminals 56 have, for example, the same shape as each other, and in one example, are formed in an L-shape having a first portion extending in the vertical direction Y and a second portion extending in the thickness direction Z.

[0019] 7, a pair of terminal seats 82A, 82B are connected to both ends of each of a pair of side walls 81A, 81B in the horizontal direction X. The pair of side walls 81A, 81B and the pair of terminal seats 82A, 82B form a frame that surrounds the substrate 10, the connection member 30, and the power semiconductor element 40. The pair of terminal seats 82A, 82B are spaced apart from each other in the horizontal direction X. A power terminal block 84 is connected to the terminal seat 82A, protruding outward in the horizontal direction X from the terminal seat 82A. An output terminal block 85 is connected to the terminal seat 82B, protruding outward in the horizontal direction X from the terminal seat 82B.

[0020] As shown in FIGS. 2, 4, and 7, the power terminal block 84 has a first terminal block 84A and a second terminal block 84B. The first terminal block 84A and the second terminal block 84B are aligned in the horizontal direction X and arranged in the vertical direction Y. A portion of the first input terminal 51A is provided on the first terminal block 84A. The first terminal block 84A supports a portion of the first input terminal 51A. The second terminal block 84B is provided with a portion of the second input terminal 51B. The second terminal block 84B supports a portion of the second input terminal 51B. As shown in FIG. 7, a nut 84N is provided inside the first terminal block 84A. As shown in FIG. 7, a nut 84N is also provided inside the second terminal block 84B, similar to the first terminal block 84A.

[0021] As shown in FIG. 7 , the first input terminal 51A and the second input terminal 51B have symmetrical shapes in a plan view. Each input terminal 51A, 51B has an exposed portion 51a exposed to the outside of the power module 1A, a connecting portion 51b for electrically connecting to each power semiconductor element 40A, 40B, and a coupling portion 51c that couples the exposed portion 51a and the connecting portion 51b. In this embodiment, each input terminal 51A, 51B is configured as a single component in which the exposed portion 51a, the connecting portion 51b, and the coupling portion 51c are integrally formed. The exposed portion 51a has a through-hole 51d that penetrates the exposed portion 51a in the thickness direction Z. In a side view of the first input terminal 51A seen from the vertical direction Y, the first input terminal 51A has a stepped shape. The exposed portion 51a of the first input terminal 51A is supported by the first terminal block 84A. The exposed portion 51a of the second input terminal 51B is supported by the second terminal block 84B. As shown in Fig. 7, the through hole 51d of the exposed portion 51a of the first input terminal 51A is provided to correspond to the nut 84N of the first terminal block 84A. The through hole 51d of the exposed portion 51a of the second input terminal 51B is provided to correspond to the nut 84N of the second terminal block 84B. A plurality of connection portions 51b are provided and are arranged at a distance from each other in the vertical direction Y.

[0022] As shown in FIGS. 2, 5, and 7, the output terminal block 85 has a first terminal block 85A and a second terminal block 85B. The first terminal block 85A and the second terminal block 85B are aligned in the horizontal direction X and arranged in the vertical direction Y. A portion of the first output terminal 52A is provided on the first terminal block 85A. The first terminal block 85A supports a portion of the first output terminal 52A. The second terminal block 85B is provided with a portion of the second output terminal 52B. The second terminal block 85B supports a portion of the second output terminal 52B. As shown in FIG. 7, a nut 85N is provided inside the first terminal block 85A. As shown in FIG. 7, a nut 85N is also provided inside the second terminal block 85B, similar to the first terminal block 85A.

[0023] As shown in FIG. 7 , the first output terminal 52A and the second output terminal 52B have symmetrical shapes in a plan view. In this embodiment, the output terminals 52A and 52B have the same shape as the input terminals 51A and 51B. Each output terminal 52A and 52B has an exposed portion 52a exposed to the outside of the power module 1A, a connecting portion 52b for electrically connecting to each power semiconductor element 40A and 40B, and a connecting portion 52c connecting the exposed portion 52a and the connecting portion 52b. In this embodiment, each output terminal 52A and 52B is configured as a single component in which the exposed portion 52a, the connecting portion 52b, and the connecting portion 52c are integrally formed. The exposed portion 52a has a through-hole 52d penetrating the exposed portion 52a in the thickness direction Z. In a side view of the first output terminal 52A seen from the vertical direction Y, the first output terminal 52A is formed in a stepped shape. The exposed portion 52a of the first output terminal 52A is supported by the first terminal block 85A. The exposed portion 52a of the second output terminal 52B is supported by the second terminal block 85B. As shown in FIG. 7, the through hole 52d of the exposed portion 52a of the first output terminal 52A is provided to correspond to the nut 85N of the first terminal block 85A. The through hole 52d of the exposed portion 52a of the second output terminal 52B is provided to correspond to the nut 85N of the second terminal block 85B. A plurality of connecting portions 52b are provided and are arranged at a distance from each other in the vertical direction Y.

[0024] As shown in FIGS. 3 and 6, the heat sink 70 is attached to the case 80 to close one end of an opening in the thickness direction Z of the case 80. The heat sink 70 is made of, for example, Cu or a Cu alloy. In this case, the surface of the metal plate may be nickel-plated. As shown in FIG. 9, the heat sink 70 has a heat-dissipating main surface 70s and a heat-dissipating back surface 70r facing opposite sides in the thickness direction Z. The heat-dissipating back surface 70r is exposed to the outside of the power module 1A. As shown in FIG. 6, support holes 71 that penetrate the heat sink 70 in the thickness direction Z are provided at the four corners of the heat sink 70 in a plan view.

[0025] 2 and 7, the multiple mounting portions 83 are provided at the four corners of the case 80 in a plan view. Each mounting portion 83 has a mounting hole 83a penetrating the mounting portion 83 in the thickness direction Z. When viewed from the thickness direction Z, the multiple mounting portions 83 are arranged to overlap with the four corners of the heat sink 70. Therefore, the multiple mounting holes 83a correspond to the support holes 71 (see FIG. 6) of the heat sink 70. The heat sink 70 is supported by the case 80 by fitting fastening members such as pins into the multiple mounting holes 83a and the support holes 71.

[0026] 1 and 2, the case 80 includes a top plate 86. The top plate 86 closes the internal area of ​​the power module 1A, which is formed by the heat sink 70, the pair of side walls 81A, 81B, and the pair of terminal seats 82A, 82B. The top plate 86 is supported by the pair of side walls 81A, 81B while being spaced apart from the heat sink 70 and the substrate 10 in the thickness direction Z.

[0027] Next, the detailed configuration of the internal region of the power module 1A will be described with reference to Fig. 7 and Fig. 9 to Fig. 19. Note that the two-dot chain lines in Fig. 15, Fig. 16, Fig. 18, and Fig. 19 are auxiliary lines for clarifying the positional relationship between each control layer and each drive layer.

[0028] 7 and 10, the internal region of the power module 1A is an opening region surrounded by a pair of side walls 81A, 81B and a pair of terminal seats 82A, 82B of the case 80, and one end of the opening region in the thickness direction Z is closed by the heat sink 70. This internal region accommodates the substrate 10, the connection member 30, the power semiconductor element 40, and the sealing resin 60 (not shown in FIG. 7).

[0029] 10, the sealing resin 60 is made of an electrically insulating resin material and is filled in the internal region enclosed by the heat sink 70 and the top plate 86. The sealing resin 60 seals the substrate 10, the connection members 30, and the power semiconductor elements 40.

[0030] As shown in FIG. 9, the substrate 10 is bonded to the heat dissipation main surface 70s of the heat sink 70 using a bonding material such as Ag (silver) paste or solder. The bonding material is not limited to conductive bonding materials such as Ag paste or solder, and an electrically insulating bonding material may also be used. As shown in FIG. 7, the substrate 10 includes a first substrate 11 and a second substrate 12. The first substrate 11 and the second substrate 12 are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The first substrate 11 is disposed on the input terminal 51A, 51B side of the internal region in the horizontal direction X, and the second substrate 12 is disposed on the output terminal 52A, 52B side of the internal region in the horizontal direction X. As shown in FIG. 10, the first substrate 11 has a first substrate main surface 11s and a first substrate back surface 11r that face opposite each other in the thickness direction Z. The second substrate 12 has a second substrate main surface 12s and a second substrate back surface 12r that face opposite each other in the thickness direction Z.

[0031] Each of the substrates 11 and 12 is an electrically insulating member on which a mounting layer for mounting the power semiconductor elements 40 and a conductive layer for electrically connecting to the power semiconductor elements 40 are disposed. The constituent material of each of the substrates 11 and 12 is ceramics with excellent thermal conductivity. Examples of such ceramics include AlN (aluminum nitride). Each of the substrates 11 and 12 can be a DBC (Direct Bonding Copper) substrate in which Cu foil is bonded to each of the substrate main surfaces 11s and 12s and each of the substrate back surfaces 11r and 12r. By using a DBC substrate, the mounting layer and conductive layer can be easily formed by patterning the copper foil bonded to each of the substrate main surfaces 11s and 12s. Furthermore, the copper foil bonded to each of the substrate back surfaces 11r and 12r can be used as a heat transfer layer.

[0032] 7 and 11, the shape of the first substrate 11 in a plan view is a substantially rectangular shape with the longer side direction being the horizontal direction X and the shorter side direction being the vertical direction Y. As shown in FIG. 11, the first substrate 11 mainly has a first substrate side surface 11a, a second substrate side surface 11b, a third substrate side surface 11c, and a fourth substrate side surface 11d. The first substrate side surface 11a and the second substrate side surface 11b are surfaces that face opposite each other in the vertical direction Y and extend along the horizontal direction X. The first substrate side surface 11a is the side surface of the first substrate 11 that faces the sidewall 81A, and the second substrate side surface 11b is the side surface of the first substrate 11 that faces the sidewall 81B. The third substrate side surface 11c and the fourth substrate side surface 11d are surfaces that face opposite each other in the horizontal direction X and extend along the vertical direction Y. The third substrate side surface 11c is the side surface of the first substrate 11 on the terminal seat 82A side, and the fourth substrate side surface 11d is the side surface of the first substrate 11 on the terminal seat 82B (see FIG. 7) side.

[0033] As shown in Figure 11, a first mounting layer 13A, a second mounting layer 14A, a conductive layer 15A, a first control layer 21, a second control layer 25, a first drive layer 23, a second drive layer 27, and a thermistor mounting layer 16 are arranged on the first substrate main surface 11s of the first substrate 11.

[0034] The first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are arranged at a distance from each other in the vertical direction Y. The first mounting layer 13A is arranged closer to the first substrate side surface 11a of the first substrate 11 than the second mounting layer 14A and the conductive layer 15A in the vertical direction Y. The conductive layer 15A is arranged closer to the second substrate side surface 11b of the first substrate 11 than the first mounting layer 13A and the second mounting layer 14A in the vertical direction Y. The second mounting layer 14A is arranged between the first mounting layer 13A and the conductive layer 15A in the vertical direction Y.

[0035] The first mounting layer 13A has a strip-shaped main mounting portion 13a extending in the horizontal direction X, a terminal-side connection portion 13b formed at an end of the main mounting portion 13a facing the third substrate side surface 11c of the first substrate 11 in the horizontal direction X, and an interlayer connection portion 13c formed at an end of the main mounting portion 13a facing the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X. In this embodiment, the first mounting layer 13A is a single member in which the main mounting portion 13a, the terminal-side connection portion 13b, and the interlayer connection portion 13c are integrally formed. The terminal-side connection portion 13b extends in the vertical direction Y and protrudes from both sides of the main mounting portion 13a in the vertical direction Y. The terminal-side connection portion 13b is disposed adjacent to the terminal seat 82A (see FIG. 7), i.e., the first input terminal 51A, in the horizontal direction X. The terminal-side connection portion 13b is connected to multiple connection portions 51b of the first input terminal 51A. The width dimension of the main mounting portion 13a (the dimension of the main mounting portion 13a in the vertical direction Y) is larger than the width dimension of the first control layer 21 (the dimension in the direction perpendicular to the extension direction of the first control layer 21 in a plan view) and larger than the width dimension of the first drive layer 23 (the dimension of the first drive layer 23 in the vertical direction Y). The width dimension of the main mounting portion 13a is at least twice the width dimensions of the first control layer 21 and the first drive layer 23, and preferably at least four times the width dimensions of the first control layer 21 and the first drive layer 23. In this embodiment, the width dimension of the main mounting portion 13a is approximately eight times the width dimensions of the first control layer 21 and the first drive layer 23. The width dimension of the interlayer connection portion 13c (the dimension of the interlayer connection portion 13c in the vertical direction Y) is larger than the width dimension of the main mounting portion 13a (the dimension of the main mounting portion 13a in the vertical direction Y). The edge of the interlayer connection portion 13c on the side of the first substrate side surface 11a of the first substrate 11 in the vertical direction Y is aligned with the edge of the main mounting portion 13a on the side of the first substrate side surface 11a of the first substrate 11 in the vertical direction Y. Therefore, the interlayer connection portion 13c protrudes toward the second substrate side surface 11b of the first substrate 11 relative to the main mounting portion 13a.

[0036] The conductive layer 15A has a strip-shaped main conductive portion 15a extending in the horizontal direction X, a terminal-side connection portion 15b formed at an end of the main conductive portion 15a facing the third substrate side surface 11c of the first substrate 11 in the horizontal direction X, and an interlayer connection portion 15c formed at an end of the main conductive portion 15a facing the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X. In this embodiment, the conductive layer 15A is a single member in which the main conductive portion 15a, the terminal-side connection portion 15b, and the interlayer connection portion 15c are integrally formed. The terminal-side connection portion 15b extends in the vertical direction Y and protrudes from both sides of the main conductive portion 15a in the vertical direction Y. The width of the main conductive portion 15a (the dimension of the main conductive portion 15a in the vertical direction Y) is equal to the width of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the vertical direction Y). The terminal-side connection portion 15b is disposed adjacent to the terminal-side connection portion 13b of the first mounting layer 13A in the vertical direction Y. The terminal-side connection portion 15b is also disposed adjacent to the terminal seat 82A, i.e., the second input terminal 51B, in the horizontal direction X. The terminal-side connection portion 15b is connected to the multiple connection portions 51b of the second input terminal 51B. The width dimension of the interlayer connection portion 15c (the dimension of the interlayer connection portion 15c in the vertical direction Y) is larger than the width dimension of the main conductive portion 15a (the dimension of the main conductive portion 15a in the vertical direction Y). The edge of the interlayer connection portion 15c on the side of the second substrate side surface 11b of the first substrate 11 in the vertical direction Y is aligned in the vertical direction Y with the edge of the main conductive portion 15a on the side of the second substrate side surface 11b of the first substrate 11 in the vertical direction Y. Therefore, interlayer connection portion 15c protrudes toward first substrate side surface 11a of first substrate 11 relative to main conductive portion 15a.

[0037] The second mounting layer 14A is disposed closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X than the terminal-side connection portion 13b of the first mounting layer 13A and the terminal-side connection portion 15b of the conductive layer 15A. The second mounting layer 14A is disposed between the main mounting portion 13a of the first mounting layer 13A and the main conductive portion 15a of the conductive layer 15A in the vertical direction Y. In this embodiment, the second mounting layer 14A is disposed in the center of the first substrate 11 in the vertical direction Y. In this embodiment, the edge of the second mounting layer 14A facing the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X, the edge of the main mounting portion 13a of the first mounting layer 13A facing the fourth substrate side surface 11d in the horizontal direction X, and the edge of the main conductive portion 15a of the conductive layer 15A facing the fourth substrate side surface 11d in the horizontal direction X are aligned in the vertical direction Y. The second mounting layer 14A has a strip-shaped main mounting portion 14a extending in the horizontal direction X and an interlayer connection portion 14b formed at an end of the main mounting portion 14a in the horizontal direction X that faces the fourth substrate side surface 11d of the first substrate 11. In this embodiment, the second mounting layer 14A is a single member in which the main mounting portion 14a and the interlayer connection portion 14b are integrally formed. The width dimension of the main mounting portion 14a of the second mounting layer 14A (the vertical dimension of the main mounting portion 14a) is larger than the width dimension of the main mounting portion 13a of the first mounting layer 13A (the vertical dimension of the main mounting portion 13a) and the width dimension of the main conductive portion 15a of the conductive layer 15A (the vertical dimension of the main conductive portion 15a). The width dimension of the interlayer connection portion 14b (the vertical dimension of the interlayer connection portion 14b) is smaller than the width dimension of the main mounting portion 14a. The interlayer connection portions 14b are formed so as to be recessed in the vertical direction Y from both end edges of the main mounting portion 14a in the vertical direction Y.

[0038] The first control layer 21 and the first drive layer 23 are each disposed closer to the first substrate side surface 11a of the first substrate 11 than the main mounting portion 13a of the first mounting layer 13A in the vertical direction Y. The first control layer 21 and the first drive layer 23 are each disposed closer to the fourth substrate side surface 11d of the first substrate 11 than the terminal-side connection portion 13b of the first mounting layer 13A in the horizontal direction X. The first control layer 21 and the first drive layer 23 are disposed apart from each other in the vertical direction Y. The first drive layer 23 is disposed closer to the main mounting portion 13a of the first mounting layer 13A than the first control layer 21. In other words, the first control layer 21 is disposed closer to the first substrate side surface 11a of the first substrate 11 than the first drive layer 23. When viewed in the vertical direction Y, the first control layer 21 overlaps with the first drive layer 23.

[0039] The second control layer 25 and the second drive layer 27 are each arranged closer to the second substrate side surface 11b of the first substrate 11 than the main conductive portion 15a of the conductive layer 15A in the vertical direction Y. The second control layer 25 and the second drive layer 27 are each arranged closer to the fourth substrate side surface 11d of the first substrate 11 than the terminal-side connection portion 15b of the conductive layer 15A in the horizontal direction X. The second control layer 25 and the second drive layer 27 are arranged to be spaced apart in the vertical direction Y. The second drive layer 27 is arranged closer to the main conductive portion 15a of the conductive layer 15A than the second control layer 25. In other words, the second control layer 25 is arranged closer to the second substrate side surface 11b of the first substrate 11 than the second drive layer 27. When viewed in the vertical direction Y, the second drive layer 27 overlaps with the second control layer 25. When viewed in the vertical direction Y, the second drive layer 27 overlaps with the main conductive portion 15a of the conductive layer 15A. In this way, the first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are sandwiched in the vertical direction Y by the first control layer 21 and the first drive layer 23, and the second control layer 25 and the second drive layer 27.

[0040] The thermistor mounting layer 16 is disposed closer to the first substrate side surface 11a of the first substrate 11 than the main mounting portion 13a of the first mounting layer 13A in the vertical direction Y. The thermistor mounting layer 16 is disposed so as to overlap the terminal-side connecting portion 13b of the first mounting layer 13A, the first control layer 21, and the first drive layer 23 when viewed in the horizontal direction X. The thermistor mounting layer 16 is disposed between the first control layer 21 and the first drive layer 23 and the terminal-side connecting portion 13b of the first mounting layer 13A in the horizontal direction X.

[0041] A thermistor 17, which is a temperature detection element, can be mounted on the thermistor mounting layer 16. In this embodiment, the thermistor 17 is mounted on the thermistor mounting layer 16. The thermistor mounting layer 16 has a pair of regions spaced apart from each other in the vertical direction Y. The positive electrode of the thermistor 17 can be electrically connected to one region, and the negative electrode of the thermistor 17 can be electrically connected to the other region.

[0042] As shown in FIGS. 7 and 12 , the shape of the second substrate 12 in a plan view is a substantially rectangular shape with the long side extending in the horizontal direction X and the short side extending in the vertical direction Y. In this embodiment, the shape of the second substrate 12 is symmetrical with respect to the first substrate 11 about a center line along the vertical direction Y, and the dimensions of the second substrate 12 in the horizontal direction X, the vertical direction Y, and the thickness direction Z are equal to the dimensions of the first substrate 11 in the horizontal direction X, the vertical direction Y, and the thickness direction Z. The second substrate 12 mainly has a first substrate side surface 12a, a second substrate side surface 12b, a third substrate side surface 12c, and a fourth substrate side surface 12d. The first substrate side surface 12a and the second substrate side surface 12b are surfaces facing opposite each other in the vertical direction Y and extend along the horizontal direction X. The first substrate side surface 12a is the side surface of the second substrate 12 facing the sidewall 81A, and the second substrate side surface 12b is the side surface of the second substrate 12 facing the sidewall 81B. The third substrate side surface 12c and the fourth substrate side surface 12d are surfaces facing opposite each other in the horizontal direction X and extending along the vertical direction Y. The third substrate side surface 12c is the side surface of the second substrate 12 facing the terminal seat 82A (see FIG. 7), and the fourth substrate side surface 12d is the side surface of the second substrate 12 facing the terminal seat 82B (see FIG. 7). Note that the shape of the second substrate 12 does not have to be symmetrical to that of the first substrate 11, and the size of the second substrate 12 may differ from the size of the first substrate 11.

[0043] As shown in Figure 12, a first mounting layer 13B, a second mounting layer 14B, a conductive layer 15B, a first control layer 22, a second control layer 26, a first drive layer 24, and a second drive layer 28 are arranged on the second substrate main surface 12s of the second substrate 12.

[0044] The first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are arranged at a distance from each other in the vertical direction Y. The first mounting layer 13B is arranged closer to the first substrate side surface 12a of the second substrate 12 than the second mounting layer 14B and the conductive layer 15B in the vertical direction Y. The conductive layer 15B is arranged closer to the second substrate side surface 12b of the second substrate 12 than the first mounting layer 13B and the second mounting layer 14B in the vertical direction Y. The second mounting layer 14B is arranged between the first mounting layer 13B and the conductive layer 15B in the vertical direction Y.

[0045] The first mounting layer 13B has a strip-shaped main mounting portion 13d extending in the horizontal direction X, a terminal-side connection portion 13e formed at an end of the main mounting portion 13d facing the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X, and an interlayer connection portion 13f formed at an end of the main mounting portion 13d facing the third substrate side surface 12c of the second substrate 12 in the horizontal direction X. In this embodiment, the first mounting layer 13B is a single member in which the main mounting portion 13d, the terminal-side connection portion 13e, and the interlayer connection portion 13f are integrally formed. The terminal-side connection portion 13e extends in the vertical direction Y and protrudes from the main mounting portion 13d toward the first substrate side surface 12a of the second substrate 12 in the vertical direction Y. The width dimension of the terminal-side connection portion 13e (the dimension of the terminal-side connection portion 13e in the horizontal direction X) is smaller than the width dimension of the main mounting portion 13d (the dimension of the main mounting portion 13d in the vertical direction Y). The width of the terminal-side connection portion 13e is equal to the width of the first control layer 22 (the dimension of the first control layer 22 in the vertical direction Y). The width of the main mounting portion 13d (the dimension of the main mounting portion 13d in the vertical direction Y) is larger than the width of the first control layer 22 (the dimension of the first control layer 22 in the vertical direction Y) and larger than the width of the first drive layer 24 (the dimension in a direction perpendicular to the extension direction of the first drive layer 24 in a plan view). The width of the main mounting portion 13d is at least twice, and preferably at least four times, the width of the first control layer 22 and the width of the first drive layer 24. In this embodiment, the width of the main mounting portion 13d is approximately eight times the width of the first control layer 22 and the width of the first drive layer 24. In this embodiment, the width of the main mounting portion 13d is equal to the width of the main mounting portion 13a of the first mounting layer 13A (see FIG. 11). The width dimension of interlayer connection portion 13f (the dimension of interlayer connection portion 13f in the vertical direction Y) is larger than the width dimension of main mounting portion 13d (the dimension of main mounting portion 13d in the vertical direction Y). The edge of interlayer connection portion 13f on the side of first substrate side surface 12a of second substrate 12 in the vertical direction Y is aligned in the vertical direction Y with the edge of main mounting portion 13d on the side of first substrate side surface 12a of second substrate 12 in the vertical direction Y. Therefore, interlayer connection portion 13f protrudes toward second substrate side surface 12b of second substrate 12 relative to main mounting portion 13d.

[0046] The conductive layer 15B has a strip-shaped main conductive portion 15d extending in the horizontal direction X and an interlayer connection portion 15e formed at an end of the main conductive portion 15d in the horizontal direction X that faces the third substrate side surface 12c of the second substrate 12. The width of the main conductive portion 15d of the conductive layer 15B (the dimension of the main conductive portion 15d in the vertical direction Y) is equal to the width of the main mounting portion 13d of the first mounting layer 13B (the dimension of the main mounting portion 13d in the vertical direction Y). The width of the interlayer connection portion 15e (the dimension of the interlayer connection portion 15e in the vertical direction Y) is larger than the width of the main conductive portion 15d (the dimension of the main conductive portion 15d in the vertical direction Y). An edge of the interlayer connection portion 15e in the vertical direction Y that faces the second substrate side surface 12b of the second substrate 12 is aligned in the vertical direction Y with an edge of the main conductive portion 15d in the vertical direction Y that faces the second substrate side surface 12b of the second substrate 12. Therefore, interlayer connection portion 15e protrudes toward first substrate side surface 12a of second substrate 12 relative to main conductive portion 15d.

[0047] The second mounting layer 14B has a strip-shaped main mounting portion 14c extending in the horizontal direction X, a terminal-side connection portion 14d formed at an end of the main mounting portion 14c facing the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X, and an interlayer connection portion 14e formed at an end of the main mounting portion 14c facing the third substrate side surface 12c of the second substrate 12 in the horizontal direction X. In this embodiment, the second mounting layer 14B is a single member in which the main mounting portion 14c, the terminal-side connection portion 14d, and the interlayer connection portion 14e are integrally formed. The main mounting portion 14c is disposed between the main mounting portion 13d of the first mounting layer 13B and the conductive layer 15B in the vertical direction Y. In this embodiment, the main mounting portion 14c is disposed in the center of the second substrate 12 in the vertical direction Y. The width of the main mounting portion 14c (the dimension of the main mounting portion 14c in the vertical direction Y) is larger than the width of the main mounting portion 13d of the first mounting layer 13B and the width of the main conductive portion 15d of the conductive layer 15B. The edge of the second mounting layer 14B facing the third substrate side surface 12c of the second substrate 12 in the horizontal direction X, the edge of the first mounting layer 13B facing the third substrate side surface 12c of the second substrate 12 in the horizontal direction X, and the edge of the conductive layer 15B facing the third substrate side surface 12c of the second substrate 12 in the horizontal direction X are aligned with each other in the vertical direction Y. The terminal-side connection portion 14d extends in the vertical direction Y and protrudes from both sides of the main mounting portion 14c in the vertical direction Y. Thus, the second mounting layer 14B has a T-shape in plan view. The terminal-side connection portion 14d is disposed closer to the fourth substrate side surface 12d of the second substrate 12 than the first mounting layer 13B and the conductive layer 15B. The terminal-side connection portion 14d is disposed adjacent to the terminal seat 82B, i.e., the first output terminal 52A and the second output terminal 52B, in the horizontal direction X. The terminal-side connection portion 14d is connected to the multiple connection portions 52b of each output terminal 52A, 52B. The width dimension of the interlayer connection portion 14e (the dimension of the interlayer connection portion 14e in the vertical direction Y) is smaller than the width dimension of the main mounting portion 14c. The interlayer connection portion 14e is formed to be recessed in the vertical direction Y from both end edges of the main mounting portion 14c in the vertical direction Y.

[0048] The first control layer 22 and the first drive layer 24 are each disposed closer to the first substrate side surface 12a of the second substrate 12 than the main mounting portion 13d of the first mounting layer 13B in the vertical direction Y. The first control layer 22 and the first drive layer 24 are each disposed closer to the third substrate side surface 12c of the second substrate 12 than the terminal-side connection portion 13e of the first mounting layer 13B in the horizontal direction X. The first control layer 22 and the first drive layer 24 are disposed spaced apart in the vertical direction Y. The first drive layer 24 is disposed closer to the main mounting portion 13d of the first mounting layer 13B than the first control layer 22. In other words, the first control layer 22 is disposed closer to the first substrate side surface 12a of the second substrate 12 than the first drive layer 24. The first drive layer 24 overlaps the first control layer 22 when viewed in the vertical direction Y. When viewed from the vertical direction Y, the first drive layer 24 overlaps the main mounting portion 13d of the first mounting layer 13B. When viewed from the horizontal direction X, the first control layer 22 and the first drive layer 24 overlap the terminal-side connecting portion 13e of the first mounting layer 13B and the terminal-side connecting portion 14d of the second mounting layer 14B, respectively.

[0049] The second control layer 26 and the second drive layer 28 are each disposed closer to the second substrate side surface 12b of the second substrate 12 than the conductive layer 15B in the vertical direction Y. The second control layer 26 and the second drive layer 28 are each disposed closer to the third substrate side surface 12c of the second substrate 12 than the terminal-side connection portion 14d of the second mounting layer 14B in the horizontal direction X. The second control layer 26 and the second drive layer 28 are disposed spaced apart in the vertical direction Y. The second drive layer 28 is disposed closer to the conductive layer 15B than the second control layer 26. In other words, the second control layer 26 is disposed closer to the second substrate side surface 12b of the second substrate 12 than the second drive layer 28. When viewed in the vertical direction Y, the second drive layer 28 overlaps with the second control layer 26. When viewed in the vertical direction Y, the second control layer 26 overlaps with the conductive layer 15B. In this way, the first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are sandwiched in the vertical direction Y by the first control layer 22 and the first driving layer 24, and the second control layer 26 and the second driving layer 28.

[0050] 7, the main mounting portion 13a and the interlayer connection portion 13c of the first mounting layer 13A and the main mounting portion 13d and the interlayer connection portion 13f of the first mounting layer 13B are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The main mounting portion 14a and the interlayer connection portion 14b of the second mounting layer 14A and the main mounting portion 14c and the interlayer connection portion 14e of the second mounting layer 14B are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The main conductive portion 15a and the interlayer connection portion 15c of the conductive layer 15A and the main conductive portion 15d and the interlayer connection portion 15e of the conductive layer 15B are aligned in the vertical direction Y and spaced apart in the horizontal direction X.

[0051] 13, interlayer connection portion 13c of first mounting layer 13A and interlayer connection portion 13f of first mounting layer 13B are connected by plate-shaped coupling member 90A, which is an example of a first mounting layer connecting member. Interlayer connection portion 14b of second mounting layer 14A and interlayer connection portion 14e of second mounting layer 14B are connected by plate-shaped coupling member 90B, which is an example of a second mounting layer connecting member. Interlayer connection portion 15c of conductive layer 15A and interlayer connection portion 15e of conductive layer 15B are connected by plate-shaped coupling member 90C.

[0052] As shown in FIG. 13 , the connecting members 90A to 90C have the same shape in a plan view. In one example, the connecting members 90A to 90C are each made of Cu or a Cu alloy. Each of the connecting members 90A to 90C has a pair of connecting portions 91 extending in the horizontal direction X and a connecting portion 92 connecting the pair of connecting portions 91 in the vertical direction Y. In this embodiment, each of the connecting members 90A to 90C is configured as a single member in which the pair of connecting portions 91 and the connecting portion 92 are integrally formed. The pair of connecting portions 91 are spaced apart from each other in the vertical direction Y and extend in the horizontal direction X. The connecting portion 92 is provided to connect the central portions of the pair of connecting portions 91 in the horizontal direction X to each other. Therefore, each of the connecting members 90A to 90C has an H-shape in a plan view.

[0053] A pair of connection portions 91 of the coupling member 90A are connected to the interlayer connection portion 13c of the first mounting layer 13A and the interlayer connection portion 13f of the first mounting layer 13B. The coupling portion 92 of the coupling member 90A is located between the interlayer connection portion 13c and the interlayer connection portion 13f in the lateral direction X. In this way, the first mounting layer 13A and the first mounting layer 13B are electrically connected by the coupling member 90A.

[0054] A pair of connection portions 91 of the coupling member 90B are connected to the interlayer connection portion 14b of the second mounting layer 14A and the interlayer connection portion 14e of the second mounting layer 14B. The coupling portion 92 of the coupling member 90B is located between the interlayer connection portion 14b and the interlayer connection portion 14e in the lateral direction X. In this way, the second mounting layer 14A and the second mounting layer 14B are electrically connected by the coupling member 90B.

[0055] A pair of connection portions 91 of coupling member 90C are connected to interlayer connection portion 15c of conductive layer 15A and interlayer connection portion 15e of conductive layer 15B. Coupling portion 92 of coupling member 90C is located between interlayer connection portion 15c and interlayer connection portion 15e in the horizontal direction X. In this manner, coupling member 90C electrically connects conductive layer 15A and conductive layer 15B.

[0056] As shown in FIG. 11 , a plurality of (five in this embodiment) first power semiconductor elements 40A are arranged as power semiconductor elements 40 on the main mounting portion 13a of the first mounting layer 13A. The plurality of first power semiconductor elements 40A are aligned in the vertical direction Y and spaced apart from one another in the horizontal direction X. Therefore, the horizontal direction X, which is the arrangement direction of the plurality of first power semiconductor elements 40A, is the first direction recited in the claims. In this embodiment, the vertical direction Y, which is orthogonal to the horizontal direction X as viewed from the thickness direction Z, is the second direction intersecting the first direction as viewed from the thickness direction. The plurality of first power semiconductor elements 40A are each arranged at an end of the main mounting portion 13a on the second mounting layer 14A side in the vertical direction Y. In the horizontal direction X, the plurality of first power semiconductor elements 40A are not arranged in the terminal-side connecting portion 13b or the interlayer connecting portion 13c.

[0057] As shown in FIGS. 9 and 10 , each first power semiconductor element 40A has an element main surface 40s and an element back surface 40r that face opposite each other in the thickness direction Z. Here, the element main surface 40s of the first power semiconductor element 40A is the first element main surface described in the claims, and the element back surface 40r of the first power semiconductor element 40A is the first element back surface described in the claims. Each first power semiconductor element 40A is disposed on the first mounting layer 13A so that the element back surface 40r faces the main mounting portion 13a. The element back surface 40r is bonded to the main mounting portion 13a by a conductive bonding material. Examples of the conductive bonding material include Ag paste and solder. A drain electrode 41 (see FIG. 8 ), which is an example of a first drive electrode, is formed on the element back surface 40r. Therefore, the drain electrode 41 is electrically connected to the first mounting layer 13A. Since the first mounting layer 13A is electrically connected to the first input terminal 51A, the drain electrode 41 is electrically connected to the first input terminal 51A via the first mounting layer 13A.

[0058] 11, a source electrode 42, which is an example of a second drive electrode, and a gate electrode 43, which is an example of a control electrode, are formed on the element main surface 40s. The source electrode 42 includes a main source electrode 42A, a first source electrode 42B, and a second source electrode 42C.

[0059] The main source electrode 42A is formed on a portion of the element principal surface 40s on the second mounting layer 14A side in the vertical direction Y. The main source electrode 42A has a rectangular shape in plan view, with its long sides aligned in the horizontal direction X and its short sides aligned in the vertical direction Y, and occupies more than half of the area of ​​the element principal surface 40s. A first element connection member 31A is connected to the main source electrode 42A as a connection member 30. Therefore, in plan view, the multiple first element connection members 31A are arranged spaced apart from each other in the horizontal direction X, which is the same direction as the arrangement of the multiple first power semiconductor elements 40A. The first element connection member 31A is formed in a strip shape extending in the vertical direction Y in plan view. The first element connection member 31A is made of, for example, a thin plate of Cu or a Cu alloy, or a thin plate of Al (aluminum) or an Al alloy. The first element connection member 31A is connected to the second mounting layer 14A. More specifically, the first element connection member 31A is connected to the end of the second mounting layer 14A on the first mounting layer 13A side in the vertical direction Y. In this manner, the first element connection member 31A connects the main source electrode 42A of each first power semiconductor element 40A to the second mounting layer 14A. Therefore, the source electrode 42 (see FIG. 8) of each first power semiconductor element 40A is electrically connected to the second mounting layer 14A.

[0060] The first source electrode 42B, the second source electrode 42C, and the gate electrode 43 are each arranged at an end of the device principal surface 40s on the first drive layer 23 side in the vertical direction Y. The first source electrode 42B, the second source electrode 42C, and the gate electrode 43 are aligned in the vertical direction Y and spaced apart in the horizontal direction X. The gate electrode 43 is arranged between the first source electrode 42B and the second source electrode 42C in the horizontal direction X. The gate electrode 43 has a rectangular shape in a plan view. The first source electrode 42B is arranged on the fourth substrate side surface 11d side of the first substrate 11 with respect to the gate electrode 43, and the second source electrode 42C is arranged on the third substrate side surface 11c side of the first substrate 11 with respect to the gate electrode 43. The first source electrode 42B and the second source electrode 42C have the same shape in a plan view, and are rectangular with their long sides aligned in the horizontal direction X and their short sides aligned in the vertical direction Y.

[0061] In each first power semiconductor element 40A, the first source electrode 42B and the first drive layer 23 are connected by a first drive side connection member 33A as a connection member 30, and the gate electrode 43 and the first control layer 21 are connected by a first control side connection member 32A as a connection member 30.

[0062] A plurality of (five in this embodiment) second power semiconductor elements 40B are arranged as the power semiconductor elements 40 on the main mounting portion 14a of the second mounting layer 14A. The second power semiconductor elements 40B are aligned in the vertical direction Y and spaced apart from each other in the horizontal direction X (first direction). Each of the second power semiconductor elements 40B is arranged at an end of the main mounting portion 14a on the conductive layer 15A side in the vertical direction Y. In the horizontal direction X, the second power semiconductor elements 40B are not arranged in the interlayer connection portion 14b.

[0063] Because the configuration of each second power semiconductor element 40B is the same as the configuration of the first power semiconductor element 40A, the same reference numerals are used for common components, and their description will be omitted. Furthermore, the joint structure between each second power semiconductor element 40B and the main mounting portion 14a of the second mounting layer 14A is the same as the joint structure between each first power semiconductor element 40A and the main mounting portion 13a of the first mounting layer 13A. Therefore, the drain electrode 41 (see FIG. 8 ) of each second power semiconductor element 40B is electrically connected to the second mounting layer 14A. Because the second mounting layer 14A is connected to each output terminal 52A, 52B via the connecting member 90B and the second mounting layer 14B, the drain electrode 41 is electrically connected to each output terminal 52A, 52B via the second mounting layers 14A, 14B and the connecting member 90B. Furthermore, since the drain electrode 41 of each second power semiconductor element 40B is electrically connected to the second mounting layer 14A, the drain electrode 41 is electrically connected to the source electrode 42 of each first power semiconductor element 40A.

[0064] A second element connection member 31B is connected to the main source electrode 42A of each second power semiconductor element 40B as the connection member 30. Therefore, in a plan view, the multiple second element connection members 31B are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement direction of the multiple second power semiconductor elements 40B. The second element connection member 31B is formed in a strip shape extending in the vertical direction Y in a plan view. The second element connection member 31B is made of, for example, a thin plate of Cu or a Cu alloy. The second element connection member 31B is also connected to the conductive layer 15A. More specifically, the second element connection member 31B is connected to the end of the main conductive portion 15a of the conductive layer 15A facing the second mounting layer 14A in the vertical direction Y. In this way, the source electrode 42 (see FIG. 8) of each second power semiconductor element 40B is electrically connected to the conductive layer 15A. Since the conductive layer 15A is electrically connected to the second input terminal 51B, the source electrode 42 of each second power semiconductor element 40B is electrically connected to the second input terminal 51B.

[0065] In each second power semiconductor element 40B, the first source electrode 42B and the second drive layer 27 are connected by a second drive side connection member 33B as a connection member 30, and the gate electrode 43 and the second control layer 25 are connected by a second control side connection member 32B as a connection member 30.

[0066] 12, a plurality of (five in this embodiment) first power semiconductor elements 40A are arranged as the power semiconductor elements 40 on the main mounting portion 13d of the first mounting layer 13B. The plurality of first power semiconductor elements 40A are aligned in the vertical direction Y and spaced apart from each other in the horizontal direction X (first direction). Each of the plurality of first power semiconductor elements 40A is arranged at an end of the main mounting portion 13d on the second mounting layer 14B side in the vertical direction Y. In the horizontal direction X, the plurality of first power semiconductor elements 40A are not arranged on the terminal-side connecting portions 13e and the interlayer connecting portions 13f.

[0067] The drain electrode 41 of each first power semiconductor element 40A is electrically connected to the first mounting layer 13B. Since the first mounting layer 13B is electrically connected to the first input terminal 51A via the connecting member 90A and the first mounting layer 13A, the drain electrode 41 of each first power semiconductor element 40A is electrically connected to the first input terminal 51A.

[0068] A first element connection member 31A is connected as the connection member 30 to the main source electrode 42A of each first power semiconductor element 40A. The first element connection member 31A is also connected to the second mounting layer 14B. More specifically, the first element connection member 31A is connected to the end of the second mounting layer 14B on the first mounting layer 13B side in the vertical direction Y. In this way, the source electrode 42 (see FIG. 8) of each first power semiconductor element 40A is electrically connected to the second mounting layer 14B.

[0069] In each first power semiconductor element 40A, the first source electrode 42B and the first drive layer 24 are connected by a first drive side connection member 33A as a connection member 30, and the gate electrode 43 and the first control layer 22 are connected by a first control side connection member 32A as a connection member 30.

[0070] A plurality of (five in this embodiment) second power semiconductor elements 40B are arranged as the power semiconductor elements 40 on the main mounting portion 14c of the second mounting layer 14B. The second power semiconductor elements 40B are aligned in the vertical direction Y and spaced apart from one another in the horizontal direction X. Each of the second power semiconductor elements 40B is arranged at an end of the main mounting portion 14c on the conductive layer 15B side in the vertical direction Y. In the horizontal direction X, the second power semiconductor elements 40B are not arranged on the terminal-side connecting portion 14d and the interlayer connecting portion 14e.

[0071] The drain electrode 41 (see FIG. 8) of each second power semiconductor element 40B is electrically connected to the second mounting layer 14B. Because the second mounting layer 14B is connected to each output terminal 52A, 52B, the drain electrode 41 is electrically connected to each output terminal 52A, 52B via the second mounting layer 14B. In addition, because the drain electrode 41 of each second power semiconductor element 40B is electrically connected to the second mounting layer 14B, the drain electrode 41 is electrically connected to the source electrode 42 of each first power semiconductor element 40A.

[0072] A second element connection member 31B is connected to the main source electrode 42A of each second power semiconductor element 40B as the connection member 30. The second element connection member 31B is also connected to the conductive layer 15B. More specifically, the second element connection member 31B is connected to the end of the main conductive portion 15d of the conductive layer 15B on the second mounting layer 14B side in the vertical direction Y. In this manner, the first element connection member 31A connects the main source electrode 42A of each first power semiconductor element 40A to the second mounting layer 14A. Therefore, the source electrode 42 (see FIG. 8 ) of each second power semiconductor element 40B is electrically connected to the conductive layer 15B. Because the conductive layer 15B is electrically connected to the second input terminal 51B via the linking member 90C and the conductive layer 15A, the source electrode 42 of each second power semiconductor element 40B is electrically connected to the second input terminal 51B.

[0073] In each second power semiconductor element 40B, the first source electrode 42B and the second drive layer 28 are connected by a second drive side connection member 33B as a connection member 30, and the gate electrode 43 and the second control layer 26 are connected by a second control side connection member 32B as a connection member 30.

[0074] Next, the shapes of the control layers 21, 22, 25, 26 and the drive layers 23, 24, 27, 28, and the connection structure between the power semiconductor elements 40A, 40B and the control terminals 53A, 53B and the detection terminals 54A, 54B will be described.

[0075] 14, the side wall 81A of the case 80 is disposed adjacent to the first control layer 21, the first drive layer 24, and the thermistor mounting layer 16 in the vertical direction Y. Therefore, the first control terminal 53A, the first detection terminal 54A, the power supply current terminal 55, and the pair of temperature detection terminals 56 disposed on the side wall 81A are disposed adjacent to the first control layer 21, the first drive layer 24, and the thermistor mounting layer 16 in the vertical direction Y, respectively.

[0076] More specifically, the first control terminal 53A and the first detection terminal 54A are arranged closer to the second substrate 12 than the first control layer 21, and are arranged adjacent to the first drive layer 24 in the vertical direction Y. When viewed in the vertical direction Y, the first control terminal 53A and the first detection terminal 54A are each arranged to overlap the second substrate 12. The first control terminal 53A and the first detection terminal 54A are arranged adjacent to each other in the horizontal direction X. The first control terminal 53A and the first detection terminal 54A are arranged closer to the third substrate side surface 12c of the second substrate 12 in the horizontal direction X. In the horizontal direction X, the first detection terminal 54A is arranged closer to the terminal seat 82B than the first control terminal 53A. The first control terminal 53A and the first control layer 21 are connected by a first control terminal side connecting member 35A as the connecting member 30. The first detection terminal 54A and the first driving layer 23 are connected by a first detection terminal side connecting member 36A as the connecting member 30.

[0077] In this way, the gate electrode 43 of each first power semiconductor element 40A on the first substrate 11 is electrically connected to the first control terminal 53A via the first control side connecting member 32A, the first control layer 21, and the first control terminal side connecting member 35A. Since the first control layer 22 is electrically connected to the first control layer 21 via the first control layer connecting member 93A, the gate electrode 43 of each first power semiconductor element 40A on the second substrate 12 is electrically connected to the first control terminal 53A via the first control side connecting member 32A, the first control layer 22, the first control layer connecting member 93A, the first control layer 21, and the first control terminal side connecting member 35A.

[0078] Furthermore, because the first drive layer 23 is electrically connected to the first drive layer 24 via the first drive layer connecting member 94A, the source electrode 42 of each first power semiconductor element 40A on the first substrate 11 is electrically connected to the first detection terminal 54A via the first drive side connecting member 33A, the first drive layer 24, the first drive layer connecting member 94A, the first drive layer 23, and the first detection terminal side connecting member 36A. The source electrode 42 of each first power semiconductor element 40A on the second substrate 12 is electrically connected to the first detection terminal 54A via the first drive side connecting member 33A, the first drive layer 23, and the first detection terminal side connecting member 36A.

[0079] The power supply current terminal 55 is disposed closer to the terminal base 82B than the first control terminal 53A and the first detection terminal 54A in the horizontal direction X. The power supply current terminal 55 is disposed adjacent to the terminal-side connection portion 13e of the first mounting layer 13B in the vertical direction Y. The power supply current terminal 55 and the first mounting layer 13B are connected by a power supply current detection-side connection member 34. The power supply current detection-side connection member 34 is connected to an end of the terminal-side connection portion 13e of the first mounting layer 13B that is closer to the first substrate side surface 12a of the second substrate 12 in the vertical direction Y.

[0080] One of the pair of temperature detection terminals 56 is disposed closer to the third substrate side surface 11c of the first substrate 11 than the first control layer 21, and the other is disposed so as to overlap an end of the first control layer 21 on the third substrate side surface 11c side of the first substrate 11 as viewed in the vertical direction Y. The pair of temperature detection terminals 56 are disposed adjacent to the thermistor mounting layer 16 in the vertical direction Y. The pair of temperature detection terminals 56 and the thermistor mounting layer 16 are connected by a thermistor-side connecting member 37 as the connecting member 30. The thermistor-side connecting member 37 is composed of two wires formed by wire bonding. One wire connects one of the pair of regions of the thermistor mounting layer 16 to one of the pair of temperature detection terminals 56. The remaining wire connects the other of the pair of regions of the thermistor mounting layer 16 to the other of the pair of temperature detection terminals 56. In this manner, the thermistor 17 and the temperature detection terminals 56 are electrically connected by the thermistor-side connecting member 37.

[0081] As shown in FIG. 15, the first control layer 21 has a first control-side wiring portion 21a, a first control-side detour portion 21b, a first control-side coupling portion 21c, and a first control-side connecting portion 21d. In this embodiment, the first control layer 21 is a single member in which the first control-side wiring portion 21a, the first control-side detour portion 21b, the first control-side coupling portion 21c, and the first control-side connecting portion 21d are integrally formed. The first control layer 21 is made of, for example, copper foil. In a plan view, the first control-side wiring portion 21a, the first control-side detour portion 21b, and the first control-side coupling portion 21c each have a narrow strip shape.

[0082] The first control-side wiring portion 21a extends along the horizontal direction X. An end portion 21e of the first control-side wiring portion 21a in the horizontal direction X, which is located on the fourth substrate side surface 11d side of the first substrate 11, is located closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X than a first power semiconductor element 40Aa, of the multiple first power semiconductor elements 40A, that is closest to the fourth substrate side surface 11d. The end portion 21e overlaps with the interlayer connection portion 13c of the first mounting layer 13A as viewed from the vertical direction Y. As viewed from the vertical direction Y, the first control-side wiring portion 21a extends in the horizontal direction X so as to overlap with four first power semiconductor elements 40A other than the first power semiconductor element 40Ab, which is closest to the third substrate side surface 11c, of the multiple first power semiconductor elements 40A.

[0083] The first control side wiring portion 21a is connected to first control side connecting members 32A, which are connected to the plurality of first power semiconductor elements 40A, respectively. The plurality of first control side connecting members 32A are arranged at a distance from each other in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first control side connecting members 32A connected to the first power semiconductor elements 40A other than the first power semiconductor element 40Ab among the plurality of first power semiconductor elements 40A each extend along the vertical direction Y in a plan view. The first control side connecting member 32A connected to the first power semiconductor element 40Ab is connected to the first control side coupling portion 21c. Since the gate electrode 43 of the first power semiconductor element 40Ab is located closer to the third substrate side surface 11c of the first substrate 11 than the first control side connecting portion 21c in the horizontal direction X, the first control side connecting member 32A connected to the first power semiconductor element 40Ab extends obliquely toward the fourth substrate side surface 11d of the first substrate 11 as it approaches the first control side connecting portion 21c.

[0084] The first control-side detour portion 21b is disposed apart from the first control-side wiring portion 21a in the vertical direction Y. The first control-side detour portion 21b is disposed on the opposite side of the first drive layer 23 side with respect to the first control-side wiring portion 21a in the vertical direction Y. The first control-side detour portion 21b extends along the horizontal direction X. The length of the first control-side detour portion 21b in the horizontal direction X is longer than the length of the first control-side wiring portion 21a in the horizontal direction X. As can be seen from FIG. 15, the first control-side connecting member 32A is not connected to the first control-side detour portion 21b. In other words, the first control-side connecting member 32A is electrically connected to the first control-side detour portion 21b but is not in physical contact with it.

[0085] The first control-side coupling portion 21c couples the first control-side wiring portion 21a and the first control-side detour portion 21b. More specifically, the first control-side coupling portion 21c couples an end portion of the first control-side wiring portion 21a that is closer to the third substrate side surface 11c of the first substrate 11 in the horizontal direction X to an end portion of the first control-side detour portion 21b that is closer to the third substrate side surface 11c in the horizontal direction X. The first control-side coupling portion 21c extends in the vertical direction Y. When viewed from the vertical direction Y, the first control-side coupling portion 21c is arranged to overlap an end portion of the first power semiconductor element 40Ab that is closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X.

[0086] The first control-side connection portion 21d is formed at the tip end portion of the first control-side detour portion 21b. The first control-side connection portion 21d is located closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X than the first control-side wiring portion 21a. The first control-side connection portion 21d extends in the vertical direction Y. The width dimension of the first control-side connection portion 21d (the dimension of the first control-side connection portion 21d in the horizontal direction X) is larger than the width dimension of the first control-side detour portion 21b (the dimension of the first control-side detour portion 21b in the vertical direction Y). The first control-side connection portion 21d is disposed spaced apart from the first control-side wiring portion 21a in the horizontal direction X, with the edge of the first control-side connection portion 21d on the first drive layer 23 side in the vertical direction Y aligned with the edge of the first control-side wiring portion 21a on the first drive layer 23 side in the vertical direction Y.

[0087] The first drive layer 23 extends along the horizontal direction X. In a plan view, the first drive layer 23 has a narrow strip shape. In this embodiment, the width dimension of the first drive layer 23 (the dimension of the first drive layer 23 in the vertical direction Y) is equal to the width dimension of the first control side wiring section 21a in the first control layer 21 (the dimension of the first control side wiring section 21a in the vertical direction Y). In addition, the width dimension of the first drive layer 23 is equal to the width dimension of the first control side detour section 21b in the first control layer 21 (the dimension of the first control side detour section 21b in the vertical direction Y).

[0088] Here, if the difference between the dimension in the vertical direction Y of the first drive layer 23 and the dimension in the vertical direction Y of the first control side wiring section 21a in the first control layer 21 is, for example, within 5% of the dimension in the vertical direction Y of the first control side wiring section 21a in the first control layer 21, then it can be said that the width dimension of the first drive layer 23 is equal to the width dimension of the first control side wiring section 21a in the first control layer 21. Furthermore, if the difference between the dimension in the vertical direction Y of the first drive layer 23 and the dimension in the vertical direction Y of the first control side detour section 21b in the first control layer 21 is, for example, within 5% of the dimension in the vertical direction Y of the first control side detour section 21b in the first control layer 21, then it can be said that the width dimension of the first drive layer 23 is equal to the width dimension of the first control side detour section 21b in the first control layer 21.

[0089] The length in the horizontal direction X of the first drive layer 23 is longer than the length in the horizontal direction X of the first control side wiring portion 21a of the first control layer 21. The length in the horizontal direction X of the first drive layer 23 is also longer than the length in the horizontal direction X of the first control side detour portion 21b of the first control layer 21. When viewed from the vertical direction Y, the end of the first drive layer 23 in the horizontal direction X that faces the third substrate side surface 11c of the first substrate 11 is aligned with the first control side coupling portion 21c of the first control layer 21. When viewed from the vertical direction Y, the end of the first drive layer 23 in the horizontal direction X that faces the fourth substrate side surface 11d of the first substrate 11 is aligned with the first control side connecting portion 21d of the first control layer 21. Furthermore, when viewed from the vertical direction Y, the end of the first drive layer 23 in the horizontal direction X on the fourth substrate side surface 11d side of the first substrate 11 and the first control side connection portion 21d of the first control layer 21 are each aligned with the interlayer connection portion 13c of the first mounting layer 13A.

[0090] First drive-side connecting members 33A, each connected to one of the plurality of first power semiconductor elements 40A, are connected to the first drive layer 23. The plurality of first drive-side connecting members 33A are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first drive-side connecting members 33A connected to the plurality of first power semiconductor elements 40A each extend along the vertical direction Y in a plan view.

[0091] As shown in FIG. 16, the first drive layer 24 has a first drive wiring portion 24a, a first drive detour portion 24b, a first drive coupling portion 24c, and a first drive connection portion 24d. In this embodiment, the first drive layer 24 is a single member in which the first drive wiring portion 24a, the first drive detour portion 24b, the first drive coupling portion 24c, and the first drive connection portion 24d are integrally formed. The first drive layer 24 is made of, for example, copper foil. In a plan view, the first drive wiring portion 24a, the first drive detour portion 24b, and the first drive coupling portion 24c each have a narrow strip shape.

[0092] The first driving-side wiring portion 24a extends along the lateral direction X. An end portion 24e of the first driving-side wiring portion 24a in the lateral direction X that is on the third substrate side surface 12c side of the second substrate 12 is located closer to the third substrate side surface 12c of the second substrate 12 in the lateral direction X than a first power semiconductor element 40Ac that is closest to the third substrate side surface 12c among the multiple first power semiconductor elements 40A.

[0093] The first drive-side wiring portion 24a is connected to first drive-side connecting members 33A, which are connected to the plurality of first power semiconductor elements 40A, respectively. The plurality of first drive-side connecting members 33A are arranged at intervals from one another in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first drive-side connecting members 33A connected to the plurality of first power semiconductor elements 40A each extend along the vertical direction Y in a plan view.

[0094] The first drive-side detour portion 24b is disposed apart from the first drive-side wiring portion 24a in the vertical direction Y. The first drive-side detour portion 24b is disposed on the opposite side of the first control layer 22 from the first drive-side wiring portion 24a in the vertical direction Y. The first drive-side detour portion 24b extends along the horizontal direction X. The length of the first drive-side detour portion 24b in the horizontal direction X is slightly longer than the length of the first drive-side wiring portion 24a in the horizontal direction X. As can be seen from FIG. 16 , the first drive-side connecting member 33A is not connected to the first drive-side detour portion 24b. That is, the first drive-side connecting member 33A is electrically connected to the first drive-side detour portion 24b but is not in physical contact with it.

[0095] The first drive-side coupling portion 24c couples the first drive-side wiring portion 24a and the first drive-side detour portion 24b. More specifically, the first drive-side coupling portion 24c couples an end of the first drive-side wiring portion 24a that is closer to the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X to an end of the first drive-side detour portion 24b that is closer to the fourth substrate side surface 12d in the horizontal direction X. The first drive-side coupling portion 24c extends in the vertical direction Y. In the horizontal direction X, the first drive-side coupling portion 24c is disposed adjacent to the terminal-side connection portion 13e of the first mounting layer 13B. As viewed in the vertical direction Y, the first drive-side coupling portion 24c is disposed so as to overlap with a first power semiconductor element 40Ad that is closest to the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X, among the multiple first power semiconductor elements 40A.

[0096] The first drive-side connection portion 24d is formed at the tip end of the first drive-side detour portion 24b. The first drive-side connection portion 24d is located closer to the third substrate side surface 12c of the second substrate 12 in the horizontal direction X than the first drive-side wiring portion 24a. The first drive-side connection portion 24d extends in the vertical direction Y. In the vertical direction Y, the first drive-side connection portion 24d is disposed adjacent to the interlayer connection portion 13f of the first mounting layer 13B. The width dimension of the first drive-side connection portion 24d (the dimension of the first drive-side connection portion 24d in the horizontal direction X) is larger than the width dimension of the first drive-side detour portion 24b (the dimension of the first drive-side detour portion 24b in the vertical direction Y). The first drive side connection portion 24d is arranged spaced apart from the first drive side wiring portion 24a in the horizontal direction X, with the edge of the first drive side connection portion 24d on the first mounting layer 13B side in the vertical direction Y aligned with the edge of the first drive side wiring portion 24a on the first mounting layer 13B side in the vertical direction Y.

[0097] The first control layer 22 extends along the horizontal direction X. In a plan view, the first control layer 22 has a narrow strip shape. In this embodiment, the width of the first control layer 22 (the dimension of the first control layer 22 in the vertical direction Y) is equal to the width of the first drive-side wiring portion 24a in the first drive layer 24 (the dimension of the first drive-side wiring portion 24a in the vertical direction Y). The width of the first control layer 22 is also equal to the width of the first drive-side detour portion 24b in the first drive layer 24 (the dimension of the first drive-side detour portion 24b in the vertical direction Y).

[0098] Here, if the difference between the vertical dimension Y of the first control layer 22 and the vertical dimension Y of the first drive-side wiring portion 24a in the first drive layer 24 is, for example, within 5% of the vertical dimension Y of the first drive-side wiring portion 24a in the first drive layer 24, then it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side wiring portion 24a in the first drive layer 24. Also, if the difference between the vertical dimension Y of the first control layer 22 and the vertical dimension Y of the first drive-side detour portion 24b in the first drive layer 24 is, for example, within 5% of the vertical dimension Y of the first drive-side detour portion 24b in the first drive layer 24, then it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side detour portion 24b in the first drive layer 24.

[0099] The length in the horizontal direction X of the first control layer 22 is slightly shorter than the length in the horizontal direction X of the first drive-side wiring portion 24a of the first drive layer 24. When viewed in the vertical direction Y, the end of the first control layer 22 in the horizontal direction X on the side of the third substrate side surface 12c of the second substrate 12 is aligned with the end 24e of the first drive-side wiring portion 24a of the first drive layer 24. When viewed in the horizontal direction X, the first control layer 22 overlaps with the first drive-side connecting portion 24d of the first drive layer 24.

[0100] The first control layer 22 is connected to first control side connecting members 32A, each connected to one of the plurality of first power semiconductor elements 40A of the second substrate 12. The plurality of first control side connecting members 32A are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first control side connecting members 32A connected to four of the plurality of first power semiconductor elements 40A, excluding the first power semiconductor element 40Ad arranged closest to the fourth substrate side surface 12d of the second substrate 12, each extend along the vertical direction Y in a plan view. Because the gate electrode 43 of the first power semiconductor element 40Ad is arranged closer to the fourth substrate side surface 12d of the second substrate 12 than the first control layer 22, the first control side connecting member 32A connected to the first power semiconductor element 40Ad extends obliquely toward the third substrate side surface 12c as it approaches the first substrate side surface 12a of the second substrate 12.

[0101] 14 to 16, a first control terminal side connecting member 35A and a first control layer connecting member 93A are connected to the first control side connecting portion 21d. More specifically, the first control terminal side connecting member 35A is connected to an end of the first control side connecting portion 21d in the vertical direction Y that is on the first substrate side surface 11a side of the first substrate 11.

[0102] The first control layer connecting member 93A is connected to an end of the first control side connecting portion 21d on the first drive layer 23 side in the vertical direction Y. The first control layer connecting member 93A is also connected to an end of the first control layer 22 on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X. In a plan view, the first control layer connecting member 93A extends along the horizontal direction X. As can be seen from FIG. 16 , the first control layer connecting member 93A is formed so as to straddle the first drive side connecting portion 24d of the first drive layer 24 in the horizontal direction X.

[0103] The first drive-side connecting portion 24d is connected to a first detection terminal-side connecting member 36A and a first drive-layer connecting member 94A. More specifically, the first detection terminal-side connecting member 36A is connected to an end of the first drive-side connecting portion 24d in the vertical direction Y that is on the first substrate side surface 12a side of the second substrate 12.

[0104] A first drive layer connecting member 94A is connected to an end of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the horizontal direction X. The first drive layer connecting member 94A is connected to an end of the first drive side connecting portion 24d on the first mounting layer 13B side in the vertical direction Y. In a plan view, the first drive layer connecting member 94A extends along the horizontal direction X.

[0105] 17, the side wall 81B of the case 80 is provided adjacent to the second control layer 26 and the second drive layer 27 in the vertical direction Y. Therefore, the second control terminal 53B and the second detection terminal 54B provided on the side wall 81B are arranged adjacent to the second control layer 26 and the second drive layer 27 in the vertical direction Y, respectively.

[0106] More specifically, the second control terminal 53B and the second detection terminal 54B are each arranged closer to the first substrate 11 than the second control layer 26, and are arranged adjacent to the second drive layer 27 in the vertical direction Y. When viewed in the vertical direction Y, the second control terminal 53B and the second detection terminal 54B are each arranged to overlap the first substrate 11. The second control terminal 53B and the second detection terminal 54B are arranged adjacent to each other in the horizontal direction X. The second control terminal 53B and the second detection terminal 54B are arranged closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X. In the horizontal direction X, the second detection terminal 54B is arranged closer to the terminal seat 82A than the second control terminal 53B. The second control terminal 53B and the second control layer 26 are connected by a second control terminal side connecting member 35B as the connecting member 30. The second detection terminal 54B and the second driving layer 27 are connected by a second detection terminal side connecting member 36B as the connecting member 30.

[0107] In this way, since the second control layer 25 is electrically connected to the second control layer 26 via the second control layer connecting member 93B, the gate electrode 43 of each second power semiconductor element 40B on the first substrate 11 is electrically connected to the second control terminal 53B via the second control side connecting member 32B, the second control layer 25, the second control layer connecting member 93B, the second control layer 26, and the second control terminal side connecting member 35B. The gate electrode 43 of each second power semiconductor element 40B on the second substrate 12 is electrically connected to the first control terminal 53A via the second control side connecting member 32B, the second control layer 26, and the second control terminal side connecting member 35B.

[0108] Furthermore, the source electrode 42 of each second power semiconductor element 40B on the first substrate 11 is electrically connected to the second detection terminal 54B via the second drive-side connecting member 33B, the second drive layer 27, and the second detection terminal-side connecting member 36B. Furthermore, since the second drive layer 28 is electrically connected to the second drive layer 27 via the second drive-layer connecting member 94B, the source electrode 42 of each second power semiconductor element 40B on the second substrate 12 is electrically connected to the second detection terminal 54B via the second drive-side connecting member 33B, the second drive layer 27, the second drive layer connecting member 94B, the second drive layer 28, and the second detection terminal-side connecting member 36B.

[0109] As shown in FIG. 18 , the second drive layer 27 has a second drive-side wiring portion 27a, a second drive-side detour portion 27b, a second drive-side coupling portion 27c, and a second drive-side connection portion 27d. In this embodiment, the second drive layer 27 is a single member in which the second drive-side wiring portion 27a, the second drive-side detour portion 27b, the second drive-side coupling portion 27c, and the second drive-side connection portion 27d are integrally formed. The second drive layer 27 is made of, for example, copper foil. In a plan view, the second drive-side wiring portion 27a, the second drive-side detour portion 27b, and the second drive-side coupling portion 27c each have a narrow strip shape.

[0110] The second driving-side wiring portion 27a extends along the horizontal direction X. In the vertical direction Y, the second driving-side wiring portion 27a is disposed adjacent to the conductive layer 15A. An end portion 27e of the second driving-side wiring portion 27a in the horizontal direction X that is located on the fourth substrate side surface 11d side of the first substrate 11 is located closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X than the second power semiconductor element 40Ba that is closest to the fourth substrate side surface 11d among the multiple second power semiconductor elements 40B. When viewed in the vertical direction Y, the second driving-side wiring portion 27a extends in the horizontal direction X so as to overlap with all of the second power semiconductor elements 40B arranged on the first substrate 11.

[0111] The second driving-side wiring portion 27a is connected to second driving-side connecting members 33B, which are connected to the second power semiconductor elements 40B, respectively. The second driving-side connecting members 33B are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement direction of the second power semiconductor elements 40B. The second driving-side connecting members 33B connected to the second power semiconductor elements 40B each extend along the vertical direction Y in a plan view.

[0112] The second drive-side detour portion 27b is disposed spaced apart from the second drive-side wiring portion 27a in the vertical direction Y. The second drive-side detour portion 27b is disposed on the opposite side of the second control layer 25 from the second drive-side wiring portion 27a in the vertical direction Y. The second drive-side detour portion 27b is disposed closer to the second substrate side surface 11b of the first substrate 11 than the second control layer 25 in the vertical direction Y. The second drive-side detour portion 27b is disposed adjacent to the second substrate side surface 11b of the first substrate 11 in the vertical direction Y. The second drive-side detour portion 27b extends along the horizontal direction X. The length of the second drive-side detour portion 27b in the horizontal direction X is slightly longer than the length of the second drive-side wiring portion 27a in the horizontal direction X. As can be seen from FIG. 18 , the second drive-side connecting member 33B is not connected to the second drive-side detour portion 27b. That is, the second driving-side connecting member 33B is electrically connected to the second driving-side detour portion 27b but is not in physical contact with it.

[0113] The second drive-side coupling portion 27c couples the second drive-side wiring portion 27a and the second drive-side detour portion 27b. More specifically, the second drive-side coupling portion 27c couples an end portion of the second drive-side wiring portion 27a that is closer to the third substrate side surface 11c of the first substrate 11 in the horizontal direction X to an end portion of the second drive-side detour portion 27b that is closer to the third substrate side surface 11c in the horizontal direction X. The second drive-side coupling portion 27c extends in the vertical direction Y. As viewed in the vertical direction Y, the second drive-side coupling portion 27c is arranged to overlap an end portion of the second power semiconductor element 40Bb that is closest to the third substrate side surface 11c, that is closer to the third substrate side surface 11c of the first substrate 11 in the horizontal direction X.

[0114] The second drive-side connection portion 27d is formed at the tip end of the second drive-side detour portion 27b. The second drive-side connection portion 27d is located closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X than the second drive-side wiring portion 27a. The second drive-side connection portion 27d extends in the vertical direction Y. The width dimension of the second drive-side connection portion 27d (the dimension of the second drive-side connection portion 27d in the horizontal direction X) is larger than the width dimension of the second drive-side detour portion 27b (the dimension of the second drive-side detour portion 27b in the vertical direction Y). The second drive-side connection portion 27d is disposed spaced apart from the second drive-side wiring portion 27a in the horizontal direction X, with the edge of the second drive-side connection portion 27d on the conductive layer 15A side in the vertical direction Y aligned with the edge of the second drive-side wiring portion 27a on the conductive layer 15A side in the vertical direction Y.

[0115] The second control layer 25 extends along the horizontal direction X. In a plan view, the second control layer 25 has a narrow strip shape. In this embodiment, the width of the second control layer 25 (the dimension of the second control layer 25 in the vertical direction Y) is equal to the width of the second drive-side wiring portion 27a in the second drive layer 27 (the dimension of the second drive-side wiring portion 27a in the vertical direction Y). The width of the second control layer 25 is also equal to the width of the second drive-side detour portion 27b in the second drive layer 27 (the dimension of the second drive-side detour portion 27b in the vertical direction Y).

[0116] Here, if the difference between the vertical dimension Y of second control layer 25 and the vertical dimension Y of second drive-side wiring portion 27a in second drive layer 27 is, for example, within 5% of the vertical dimension Y of second drive-side wiring portion 27a in second drive layer 27, then it can be said that the width dimension of second control layer 25 is equal to the width dimension of second drive-side wiring portion 27a in second drive layer 27. Also, if the difference between the vertical dimension Y of second control layer 25 and the vertical dimension Y of second drive-side detour portion 27b in second drive layer 27 is, for example, within 5% of the vertical dimension Y of second drive-side detour portion 27b in second drive layer 27, then it can be said that the width dimension of second control layer 25 is equal to the width dimension of second drive-side detour portion 27b in second drive layer 27.

[0117] The length in the horizontal direction X of the second control layer 25 is slightly shorter than the length in the horizontal direction X of the second drive-side wiring portion 27a of the second drive layer 27. When viewed in the vertical direction Y, the end portion 25x of the second control layer 25 in the horizontal direction X on the side of the fourth substrate side surface 11d of the first substrate 11 is aligned with the end portion 27e of the second drive-side wiring portion 27a of the second drive layer 27.

[0118] The second control layer 25 is connected to second control side connecting members 32B, each connected to a corresponding one of the second power semiconductor elements 40B. The second control side connecting members 32B are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement of the second power semiconductor elements 40B. The second control side connecting members 32B connected to the second power semiconductor elements 40B each extend along the vertical direction Y in a plan view. A first driving layer connecting member 94A is connected to an end of the first driving layer 23 in the horizontal direction X that is on the side of the fourth substrate side surface 11d of the first substrate 11.

[0119] 19, the second control layer 26 has a second control-side wiring portion 26a, a second control-side detour portion 26b, a second control-side coupling portion 26c, and a second control-side connecting portion 26d. In this embodiment, the second control layer 26 is a single member in which the second control-side wiring portion 26a, the second control-side detour portion 26b, the second control-side coupling portion 26c, and the second control-side connecting portion 26d are integrally formed. The second control layer 26 is made of, for example, copper foil. In a plan view, the second control-side wiring portion 26a, the second control-side detour portion 26b, and the second control-side coupling portion 26c each have a narrow strip shape.

[0120] The second control-side wiring portion 26a extends along the lateral direction X. An end portion 26e of the second control-side wiring portion 26a in the lateral direction X, which is on the side of the third substrate side surface 12c of the second substrate 12, is located closer to the third substrate side surface 12c of the second substrate 12 in the lateral direction X than the second power semiconductor element 40Bc, which is closest to the third substrate side surface 12c, among the multiple second power semiconductor elements 40B.

[0121] The second control side wiring portion 26a is connected to second control side connecting members 32B, which are respectively connected to the plurality of second power semiconductor elements 40B. The plurality of second control side connecting members 32B are arranged at a distance from each other in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second control side connecting members 32B connected to the plurality of second power semiconductor elements 40B each extend along the vertical direction Y in a plan view.

[0122] The second control-side detour portion 26b is disposed apart from the second control-side wiring portion 26a in the vertical direction Y. The second control-side detour portion 26b is disposed on the opposite side of the second drive layer 28 from the second control-side wiring portion 26a in the vertical direction Y. The second control-side detour portion 26b is disposed adjacent to the second substrate side surface 12b of the second substrate 12 in the vertical direction Y. The second control-side detour portion 26b extends along the horizontal direction X. The length of the second control-side detour portion 26b in the horizontal direction X is slightly longer than the length of the second control-side wiring portion 26a in the horizontal direction X. As can be seen from FIG. 19 , the second control-side connecting member 32B is not connected to the second control-side detour portion 26b. That is, the second control-side connecting member 32B is electrically connected to the second control-side detour portion 26b but is not in physical contact with it.

[0123] The second control-side coupling portion 26c couples the second control-side wiring portion 26a and the second control-side detour portion 26b. More specifically, the second control-side coupling portion 26c couples an end of the second control-side wiring portion 26a that is closer to the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X to an end of the second control-side detour portion 26b that is closer to the fourth substrate side surface 12d in the horizontal direction X. The second control-side coupling portion 26c extends in the vertical direction Y. In the horizontal direction X, the second control-side coupling portion 26c is disposed adjacent to the terminal-side connection portion 14d of the second mounting layer 14B. As viewed in the vertical direction Y, the second control-side coupling portion 26c is disposed so as to overlap with a second power semiconductor element 40Bd that is closest to the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X, among the multiple second power semiconductor elements 40B.

[0124] The second control side connection portion 26d is formed at the tip end portion of the second control side detour portion 26b. The second control side connection portion 26d is located closer to the third substrate side surface 12c of the second substrate 12 in the horizontal direction X than the second control side wiring portion 26a. The second control side connection portion 26d extends in the vertical direction Y. In the vertical direction Y, the second control side connection portion 26d is disposed so as to be adjacent to the second drive layer 28. The width dimension of the second control side connection portion 26d (the dimension of the second control side connection portion 26d in the horizontal direction X) is larger than the width dimension of the second control side detour portion 26b (the dimension of the second control side detour portion 26b in the vertical direction Y). The second control side connection portion 26d is arranged at a distance from the second control side wiring portion 26a in the horizontal direction X, with the edge of the second control side connection portion 26d on the second drive layer 28 side in the vertical direction Y aligned in the vertical direction Y with the edge of the second control side wiring portion 26a on the second drive layer 28 side in the vertical direction Y.

[0125] The second drive layer 28 extends along the horizontal direction X. In a plan view, the second drive layer 28 has a narrow strip shape. In this embodiment, the width of the second drive layer 28 (the vertical Y dimension of the second drive layer 28) is equal to the width of the second control side wiring section 26a in the second control layer 26 (the vertical Y dimension of the second control side wiring section 26a). The width of the second drive layer 28 is also equal to the width of the second control side detour section 26b in the second control layer 26 (the vertical Y dimension of the second control side detour section 26b).

[0126] Here, if the difference between the dimension in the vertical direction Y of the second drive layer 28 and the dimension in the vertical direction Y of the second control side wiring portion 26a in the second control layer 26 is, for example, within 5% of the dimension in the vertical direction Y of the second control side wiring portion 26a in the second control layer 26, then it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control side wiring portion 26a in the second control layer 26. Furthermore, if the difference between the dimension in the vertical direction Y of the second drive layer 28 and the dimension in the vertical direction Y of the second control side detour portion 26b in the second control layer 26 is, for example, within 5% of the dimension in the vertical direction Y of the second control side detour portion 26b in the second control layer 26, then it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control side detour portion 26b in the second control layer 26.

[0127] The length in the horizontal direction X of the second drive layer 28 is longer than the length in the horizontal direction X of the second control side wiring portion 26a of the second control layer 26. When viewed in the vertical direction Y, the end of the second drive layer 28 in the horizontal direction X that faces the fourth substrate side surface 12d of the second substrate 12 is aligned with the second control side coupling portion 26c of the second control layer 26. When viewed in the vertical direction Y, the end of the second drive layer 28 in the horizontal direction X that faces the third substrate side surface 12c of the second substrate 12 is aligned with the second control side connecting portion 26d of the second control layer 26.

[0128] Second drive-side connecting members 33B are connected to the second drive layer 28, and are connected to the second power semiconductor elements 40B of the second substrate 12, respectively. The second drive-side connecting members 33B are arranged spaced apart from one another in the horizontal direction X, which is the same direction as the arrangement of the second power semiconductor elements 40B. The second drive-side connecting members 33B connected to the second power semiconductor elements 40B extend along the vertical direction Y in a plan view.

[0129] 17 to 19, second driving-side detour portion 27b is connected to second detection terminal-side connecting member 36B. More specifically, second detection terminal-side connecting member 36B is connected to the end of second driving-side detour portion 27b on the side of second driving-side connecting portion 27d.

[0130] The second drive layer connecting members 94B are connected to the second drive side connecting portions 27d, respectively. More specifically, the second drive layer connecting members 94B are connected to the ends of the second drive side connecting portions 27d on the conductive layer 15A side in the vertical direction Y. The second drive layer connecting members 94B are also connected to the ends of the second drive layer 28 on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X. In a plan view, the second drive layer connecting members 94B extend along the horizontal direction X.

[0131] A second control layer connecting member 93B is connected to an end 25x of the second control layer 25 that is on the side of the fourth substrate side surface 11d of the first substrate 11. The second control layer connecting member 93B is also connected to the second control side connecting portion 26d of the second control layer 26. The second control layer connecting member 93B is connected to an end of the second control side connecting portion 26d on the second drive layer 28 side in the vertical direction Y. In a plan view, the second control layer connecting member 93B extends along the horizontal direction X. As shown in FIG. 18 , the second control layer connecting member 93B is formed so as to straddle the second drive side connecting portion 27d of the second drive layer 27 in the horizontal direction X.

[0132] The second control terminal side connecting member 35B is connected to the second control side connecting portion 26d. More specifically, the second control terminal side connecting member 35B is connected to the end of the second control side connecting portion 26d in the vertical direction Y that is on the second substrate side surface 12b side of the second substrate 12.

[0133] As shown in Figures 11 to 19, each control side connecting member 32A, 32B, each drive side connecting member 33A, 33B, power supply current detection side connecting member 34, each control terminal side connecting member 35A, 35B, each detection terminal side connecting member 36A, 36B, thermistor side connecting member 37, each control layer connecting member 93A, 93B, and each drive layer connecting member 94A, 94B is a wire made of Au (gold), Au alloy, Al, Al alloy, Cu, or Cu alloy.

[0134] (Conductive path) Next, we will explain the control side conductive path, which is the first conductive path between each power semiconductor element 40A, 40B and each control terminal 53A, 53B, and the drive side conductive path, which is the second conductive path between each power semiconductor element 40A, 40B and each detection terminal 54A, 54B.

[0135] 14, the first control-side conductive paths from the gate electrodes 43 of the multiple first power semiconductor elements 40A on the first substrate 11 to the first control terminals 53A are configured by the first control-side connecting members 32A, the first control layer 21, and the first control terminal-side connecting members 35A. For this reason, the first control-side conductive paths for the multiple first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Ab to the first power semiconductor element 40Aa. In other words, the difference in length of the first control-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A, are greatest. In this case, the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Aa, is the longest, and the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ab, is the shortest.

[0136] The first drive-side conductive paths from the source electrodes 42 of the multiple first power semiconductor elements 40A on the first substrate 11 to the first detection terminals 54A are configured by the first drive-side connecting members 33A, the first drive layer 23, the first drive-layer connecting members 94A, the first drive-side connecting portions 24d of the first drive layer 24, and the first detection terminal connecting members 36A. For this reason, the first drive-side conductive paths for the multiple first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor elements 40Aa to the first power semiconductor elements 40Ab. In other words, the difference in length of the first drive-side conductive paths for the first power semiconductor elements 40Aa as the first end power semiconductor elements and the first power semiconductor elements 40Ab as the second end power semiconductor elements, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction (lateral direction X), are the largest. In this case, the first end drive side conductive path, which is the first drive side conductive path of the first power semiconductor element 40Aa, has the shortest length, and the second end drive side conductive path, which is the first drive side conductive path of the first power semiconductor element 40Ab, has the longest length.

[0137] The first control-side conductive paths from the gate electrodes 43 of the multiple first power semiconductor elements 40A on the second substrate 12 to the first control terminals 53A are configured by the first control-side connecting member 32A, the first control layer 22, the first control layer connecting member 93A, the first control-side connecting portion 21d of the first control layer 21, and the first control terminal-side connecting member 35A. For this reason, the first control-side conductive paths related to the multiple first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ac toward the first power semiconductor element 40Ad. In other words, the difference in length of the first control-side conductive paths related to the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction (lateral direction X) of the first power semiconductor elements 40A, are greatest. In this case, the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ac, has the shortest length, and the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ad, has the longest length.

[0138] The first drive-side conductive paths from the source electrodes 42 of the multiple first power semiconductor elements 40A on the second substrate 12 to the first detection terminals 54A are configured by the first drive-side connecting members 33A, the first drive layers 24, and the first detection terminal-side connecting members 36A. For this reason, the first drive-side conductive paths for the multiple first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor elements 40Ad toward the first power semiconductor elements 40Ac. In other words, the difference in length of the first drive-side conductive paths for the first power semiconductor elements 40Ac as the first end power semiconductor elements and the first power semiconductor elements 40Ad as the second end power semiconductor elements, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction (lateral direction X) of the first power semiconductor elements 40A, are greatest. In this case, the first end driving side conductive path, which is the first driving side conductive path of the first power semiconductor element 40Ac, is the longest, and the second end driving side conductive path, which is the first driving side conductive path of the first power semiconductor element 40Ad, is the shortest.

[0139] As described above, in this embodiment, the first control-side detour portion 21b and the first drive-side detour portion 24b are formed so as to reduce the variation in the total length of the first control-side conduction path and the first drive-side conduction path among the plurality of first power semiconductor elements 40A. That is, the power module 1A of this embodiment is configured such that the first control-side detour portion 21b and the first drive-side detour portion 24b cause the sum of the length of the first control-side conduction path, which is an example of a first conduction path, and the length of the first drive-side conduction path, which is an example of a second conduction path, to become close to each other among the plurality of first power semiconductor elements 40A.

[0140] In addition, in this embodiment, the first control side bypass portion 21b and the first drive side bypass portion 24b are each formed so as to reduce the variation between the total length of the first end control side conductive path and the first end drive side conductive path and the total length of the second end control side conductive path and the second end drive side conductive path.

[0141] The sum of the length of the first-end control-side conductive path and the length of the first-end drive-side conductive path is an example of the "first sum" set forth in the claims. The sum of the length of the second-end control-side conductive path and the length of the second-end drive-side conductive path is an example of the "second sum" set forth in the claims. Therefore, the power module 1A of this embodiment is configured such that the first sum and the second sum approach each other by the first control-side detour section 21b and the first drive-side detour section 24b.

[0142] 17 , the second control-side conductive paths from the gate electrodes 43 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second control terminals 53B are configured by the second control-side connecting member 32B, the second control layer 25, the second control layer connecting member 93B, the second control-side connecting portion 26d of the second control layer 26, and the second control terminal-side connecting member 35B. For this reason, the second control-side conductive paths, which are an example of the third conductive paths related to the plurality of second power semiconductor elements 40B on the first substrate 11, become longer in the order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second control-side conductive paths related to the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends of the arrangement direction (horizontal direction X) of the plurality of second power semiconductor elements 40B, is greatest. In this case, the third end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Ba, has the shortest length, and the fourth end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bb, has the longest length.

[0143] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second detection terminal 54B is composed of the second drive-side connecting member 33B, the second drive layer 27, and the second detection terminal-side connecting member 36B. Therefore, the second drive-side conductive path, which is an example of the fourth conductive path for the plurality of second power semiconductor elements 40B on the first substrate 11, becomes longer in the order from the second power semiconductor element 40Bb to the second power semiconductor element 40Ba. In other words, the difference in length of the second drive-side conductive path for the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends of the arrangement direction (horizontal direction X) of the plurality of second power semiconductor elements 40B, is greatest. In this case, the third end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Ba, is the longest, and the fourth end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bb, is the shortest.

[0144] The second control-side conductive paths from the gate electrodes 43 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second control terminals 53B are configured by the second control-side connecting member 32B, the second control layer 26, and the second control terminal-side connecting member 35B. For this reason, the second control-side conductive paths, which are an example of third conductive paths related to the plurality of second power semiconductor elements 40B on the second substrate 12, become longer in order from the second power semiconductor element 40Bd to the second power semiconductor element 40Bc. In other words, the difference in length of the second control-side conductive paths related to the second power semiconductor element 40Bc as the first end power semiconductor element and the second power semiconductor element 40Bd as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the plurality of second power semiconductor elements 40B, are greatest. In this case, the third end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bc, is the longest, and the fourth end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bd, is the shortest.

[0145] The second drive-side conductive paths from the source electrodes 42 of the multiple second power semiconductor elements 40B on the second substrate 12 to the second detection terminals 54B are configured by the second drive-side connecting members 33B, the second drive layer 28, the second drive-layer connecting members 94B, the second drive-side connecting portions 27d of the second drive layer 27, and the second detection terminal connecting members 36B. Therefore, the second drive-side conductive paths, which are an example of fourth conductive paths related to the multiple second power semiconductor elements 40B on the second substrate 12, become longer in the order from the second power semiconductor elements 40Bc to the second power semiconductor elements 40Bd. In other words, the difference in length of the second drive-side conductive paths related to the second power semiconductor elements 40Bc as the first end power semiconductor elements and the second power semiconductor elements 40Bd as the second end power semiconductor elements, which are both ends of the multiple second power semiconductor elements 40B in the arrangement direction (horizontal direction X), are the largest. In this case, the third end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bc, has the shortest length, and the fourth end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bd, has the longest length.

[0146] As described above, in the present embodiment, second control-side detour portion 26b and second drive-side detour portion 27b are formed so as to reduce the variation in the total length of the second control-side conduction path and the second drive-side conduction path among the plurality of second power semiconductor elements 40B. That is, in the power module 1A of the present embodiment, second control-side detour portion 26b and second drive-side detour portion 27b are configured so that the sum of the length of the second control-side conduction path, which is an example of a third conduction path, and the length of the second drive-side conduction path, which is an example of a fourth conduction path, becomes close to each other among the plurality of second power semiconductor elements 40B.

[0147] In addition, in this embodiment, the first control side bypass portion 21b and the first drive side bypass portion 24b are each formed so as to reduce the variation between the total length of the third end control side conductive path and the third end drive side conductive path and the total length of the fourth end control side conductive path and the fourth end drive side conductive path.

[0148] The sum of the lengths of the third-end control-side conductive paths and the third-end drive-side conductive paths is an example of the "third sum" set forth in the claims. The sum of the lengths of the fourth-end control-side conductive paths and the fourth-end drive-side conductive paths is an example of the "fourth sum" set forth in the claims. Therefore, the power module 1A of this embodiment is configured such that the third sum approaches the fourth sum by the second control-side detour section 26b and the second drive-side detour section 27b.

[0149] (action) The operation of the power module 1A of this embodiment will be described. Note that Fig. 20 shows the internal structure of a power module 1X of a comparative example. For convenience, the case 80 is omitted from Fig. 20. First, the configuration of the power module 1X of the comparative example will be described below.

[0150] 20, the power module 1X has a different configuration of each control layer and each drive layer compared to the power module 1A of this embodiment. For convenience, in the power module 1X, the control layers and drive layers corresponding to the control layers 21, 22, 25, and 26 and the drive layers 23, 24, 27, and 28 of the power module 1A are denoted by the reference numerals followed by "X."

[0151] As shown in FIG. 21 , the first control layer 21X and the first drive layer 23X are spaced apart in the vertical direction Y. The first drive layer 23X is disposed on the first mounting layer 13A side of the first control layer 21X. Both the first control layer 21X and the first drive layer 23X extend in the horizontal direction X. The first control layer 21X and the first control terminal 53A are electrically connected by a first control terminal side connecting member 35A. The first control layer 21X and each of the gate electrodes 43 of the multiple first power semiconductor elements 40A on the first substrate 11 are electrically connected by a first control side connecting member 32A. The first drive layer 23X and each of the source electrodes 42 of the multiple first power semiconductor elements 40A on the first substrate 11 are electrically connected by a first drive side connecting member 33A.

[0152] The first control layer 22X and the first drive layer 24X are disposed apart from each other in the vertical direction Y. The first drive layer 24X is disposed on the first mounting layer 13B side of the first control layer 22X. Both the first control layer 22X and the first drive layer 24X extend in the horizontal direction X. The first control layer 22X and the first control layer 21X are electrically connected by a first control layer connecting member 93A. The first drive layer 24X and the first drive layer 23X are electrically connected by a first drive layer connecting member 94A. The first drive layer 24X and the first detection terminal 54A are electrically connected by a first detection terminal side connecting member 36A. The first control layer 22X and each of the gate electrodes 43 of the multiple first power semiconductor elements 40A on the second substrate 12 are electrically connected by a first control side connecting member 32A. The first drive layer 24X and each of the source electrodes 42 of the multiple first power semiconductor elements 40A on the second substrate 12 are electrically connected by a first drive-side connecting member 33A.

[0153] The first control-side conductive paths from the gate electrodes 43 of the multiple first power semiconductor elements 40A on the first substrate 11 to the first control terminals 53A are configured by the first control-side connecting member 32A, the first control layer 21X, and the first control terminal-side connecting member 35A. For this reason, the first control-side conductive paths for the multiple first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in length of the first control-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the multiple first power semiconductor elements 40A, are greatest. In this case, the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Aa, has the shortest length, and the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ab, has the longest length.

[0154] The first drive-side conductive paths from the source electrodes 42 of the multiple first power semiconductor elements 40A on the first substrate 11 to the first detection terminals 54A are configured by the first drive-side connecting members 33A, the first drive layers 23X, the first drive-layer connecting members 94A, the first drive layers 24X, and the first detection terminal connecting members 36A. For this reason, the first drive-side conductive paths for the multiple first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in length of the first drive-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction (lateral direction X) of the first power semiconductor elements 40A, are greatest. In this case, the first end drive side conductive path, which is the first drive side conductive path of the first power semiconductor element 40Aa, has the shortest length, and the second end drive side conductive path, which is the first drive side conductive path of the first power semiconductor element 40Ab, has the longest length.

[0155] The first control-side conductive paths from the gate electrodes 43 of the multiple first power semiconductor elements 40A on the second substrate 12 to the first control terminals 53A are configured by the first control-side connecting member 32A, the first control layer 22X, the first control layer connecting member 93A, the first control layer 21X, and the first control terminal-side connecting member 35A. For this reason, the first control-side conductive paths related to the multiple first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ac toward the first power semiconductor element 40Ad. In other words, the difference in length of the first control-side conductive paths related to the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction (lateral direction X) of the first power semiconductor elements 40A, are greatest. In this case, the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ac, has the shortest length, and the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ad, has the longest length.

[0156] The first drive-side conductive paths from the source electrodes 42 of the multiple first power semiconductor elements 40A on the second substrate 12 to the first detection terminals 54A are configured by the first drive-side connecting members 33A, the first drive layers 24X, and the first detection terminal-side connecting members 36A. For this reason, the first drive-side conductive paths for the multiple first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor elements 40Ac toward the first power semiconductor elements 40Ad. In other words, the difference in length of the first drive-side conductive paths for the first power semiconductor elements 40Ac as the first end power semiconductor elements and the first power semiconductor elements 40Ad as the second end power semiconductor elements, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction (lateral direction X) of the first power semiconductor elements 40A, are greatest. In this case, the length of the first end driving side conductive path, which is the first driving side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end driving side conductive path, which is the first driving side conductive path of the first power semiconductor element 40Ad, is the longest.

[0157] As described above, in the power module 1X, the first control-side conductive paths and the first drive-side conductive paths of the multiple first power semiconductor elements 40A on the first substrate 11 both increase in length from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab, and therefore there is a large variation in the total length of the first control-side conductive paths and the first drive-side conductive paths of the multiple first power semiconductor elements 40A on the first substrate 11. In particular, the first power semiconductor element 40Aa has the shortest first control-side conductive path and the shortest first drive-side conductive path. The first power semiconductor element 40Ab has the longest first control-side conductive path and the longest first drive-side conductive path. Therefore, there is a large variation between the sum of the length of the first control side conduction path and the length of the first drive side conduction path in the first power semiconductor element 40Aa and the sum of the length of the first control side conduction path and the length of the first drive side conduction path in the first power semiconductor element 40Ab.

[0158] Furthermore, because the first control-side conductive paths and the first drive-side conductive paths of the multiple first power semiconductor elements 40A on the second substrate 12 both increase in length from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad, there is a large variation in the sum of the first control-side conductive paths and the first drive-side conductive paths of the multiple first power semiconductor elements 40A on the second substrate 12. In particular, the length of the first control-side conductive path of the first power semiconductor element 40Ac is the shortest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ac is the shortest. The length of the first control-side conductive path of the first power semiconductor element 40Ad is the longest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ad is the longest. For this reason, there is a large variation in the sum of the lengths of the first control-side conductive path and the first drive-side conductive path in the first power semiconductor element 40Ac and the sum of the lengths of the first control-side conductive path and the first drive-side conductive path in the first power semiconductor element 40Ad.

[0159] 22 , the second control-side conductive paths from the gate electrodes 43 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second control terminals 53B are configured by the second control-side connecting member 32B, the second control layer 25X, the second control layer connecting member 93B, the second control layer 26X, and the second control terminal-side connecting member 35B. For this reason, the second control-side conductive paths related to the plurality of second power semiconductor elements 40B on the first substrate 11 become longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second control-side conductive paths related to the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends of the arrangement direction (lateral direction X) of the plurality of second power semiconductor elements 40B, is greatest. In this case, the third end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Ba, has the shortest length, and the fourth end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bb, has the longest length.

[0160] The second drive-side conductive paths from the source electrodes 42 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second detection terminals 54B are configured by the second drive-side connecting members 33B, the second drive layers 27X, and the second detection terminal connecting members 36B. For this reason, the second drive-side conductive paths for the plurality of second power semiconductor elements 40B on the first substrate 11 become longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second drive-side conductive paths for the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the plurality of second power semiconductor elements 40B, are greatest. In this case, the third end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Ba, is the shortest in length, and the fourth end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bb, is the longest in length.

[0161] The second control-side conductive paths from the gate electrodes 43 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second control terminals 53B are configured by the second control-side connecting member 32B, the second control layer 26X, and the second control terminal-side connecting member 35B. For this reason, the second control-side conductive paths for the plurality of second power semiconductor elements 40B on the second substrate 12 become longer in order from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in length of the second control-side conductive paths for the second power semiconductor element 40Bc as the first end power semiconductor element and the second power semiconductor element 40Bd as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the plurality of second power semiconductor elements 40B, are greatest. In this case, the third end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bc, has the shortest length, and the fourth end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bd, has the longest length.

[0162] The second drive-side conductive paths from the source electrodes 42 of the multiple second power semiconductor elements 40B on the second substrate 12 to the second detection terminals 54B are configured by the second drive-side connecting members 33B, the second drive layers 28X, the second drive-layer connecting members 94B, the second drive layers 27X, and the second detection terminal connecting members 36B. Therefore, the second drive-side conductive paths for the multiple second power semiconductor elements 40B on the second substrate 12 become longer in order from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in length between the second drive-side conductive paths for the second power semiconductor element 40Bc as the first end power semiconductor element and the second power semiconductor element 40Bd as the second end power semiconductor element, which are both ends of the multiple second power semiconductor elements 40B in the arrangement direction (lateral direction X) of the second power semiconductor elements 40B, is greatest. In this case, the third end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bc, has the shortest length, and the fourth end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bd, has the longest length.

[0163] As described above, in the power module 1X, the second control-side conductive paths and the second drive-side conductive paths of the second power semiconductor elements 40B on the first substrate 11 both increase in length from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb, and therefore there is a large variation in the total conductive path length, which is the sum of the second control-side conductive paths and the second drive-side conductive paths of the second power semiconductor elements 40B on the first substrate 11. In particular, the second power semiconductor element 40Ba has the shortest second control-side conductive path length and the shortest second drive-side conductive path length. The second power semiconductor element 40Bb has the longest second control-side conductive path length and the longest second drive-side conductive path length. Therefore, there is a large variation between the sum of the length of the second control side conduction path and the length of the second drive side conduction path in the second power semiconductor element 40Ba and the sum of the length of the second control side conduction path and the length of the second drive side conduction path in the second power semiconductor element 40Bb.

[0164] Furthermore, the second control-side conductive paths and second drive-side conductive paths of the second power semiconductor elements 40B on the second substrate 12 both increase in length from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd, resulting in a large variation in the total conductive path length, which is the sum of the second control-side conductive paths and the second drive-side conductive paths of the second power semiconductor elements 40B on the second substrate 12. In particular, the second power semiconductor element 40Bc has the shortest second control-side conductive path and the shortest second drive-side conductive path. The second power semiconductor element 40Bd has the longest second control-side conductive path and the longest second drive-side conductive path. Therefore, there is a large variation between the sum of the length of the second control side conductive path and the length of the second drive side conductive path in the second power semiconductor element 40Bc and the sum of the length of the second control side conductive path and the length of the second drive side conductive path in the second power semiconductor element 40Bd.

[0165] As a result, as shown in FIG. 23 , the total inductance value of the inductance between the first power semiconductor element 40A and the first control terminal 53A and the inductance between the first power semiconductor element 40A and the first detection terminal 54A in each first power semiconductor element 40A varies. As can be seen from FIG. 23 , of the multiple first power semiconductor elements 40A mounted on the first mounting layer 13A, the first power semiconductor element 40Aa has the smallest inductance value, and the first power semiconductor element 40Ab has the largest inductance value. That is, the variation between the inductance values ​​of the first power semiconductor element 40Aa and the first power semiconductor element 40Ab is greatest. Of the multiple first power semiconductor elements 40A mounted on the first mounting layer 13B, the first power semiconductor element 40Ac has the smallest inductance value, and the first power semiconductor element 40Ad has the largest inductance value. That is, the variation between the inductance value of the first power semiconductor element 40Ac and the inductance value of the first power semiconductor element 40Ad is greatest.

[0166] Furthermore, the sum of the inductance between the second power semiconductor element 40B and the second control terminal 53B and the inductance between the second power semiconductor element 40B and the second detection terminal 54B in each second power semiconductor element 40B varies. As can be seen from FIG. 23 , of the multiple second power semiconductor elements 40B mounted on the second mounting layer 14A, the second power semiconductor element 40Ba has the smallest inductance value and the second power semiconductor element 40Bb has the largest inductance value. That is, the variation between the inductance values ​​of the second power semiconductor element 40Ba and the second power semiconductor element 40Bb is greatest. Of the multiple second power semiconductor elements 40B mounted on the second mounting layer 14B, the second power semiconductor element 40Bc has the smallest inductance value and the second power semiconductor element 40Bd has the largest inductance value. That is, the variation between the inductance values ​​of the second power semiconductor element 40Bc and the second power semiconductor element 40Bd is greatest.

[0167] As a result, when a gate voltage Vg is applied to each of the first power semiconductor elements 40A and each of the second power semiconductor elements 40B, the waveform of the gate voltage Vg may fluctuate due to variations in inductance value. In particular, when high-speed switching is performed using SiC MOSFETs as each of the first power semiconductor elements 40A and each of the second power semiconductor elements 40B in the power module 1X, ringing may occur as shown in FIG.

[0168] In consideration of these points, in the present embodiment, as described above, first control-side detour portions 21b and first drive-side detour portions 24b are formed in the plurality of first power semiconductor elements 40A so as to reduce variation in the sum of the lengths of the first control-side conduction paths and the first drive-side conduction paths. Furthermore, second control-side detour portions 26b and second drive-side detour portions 27b are formed in the plurality of second power semiconductor elements 40B so as to reduce variation in the sum of the lengths of the second control-side conduction paths and the second drive-side conduction paths. Therefore, as shown in FIG. 23 , variation in the sum of the inductance between the first power semiconductor element 40A and the first control terminal 53A and the inductance between the first power semiconductor element 40A and the first detection terminal 54A in each first power semiconductor element 40A is reduced. Furthermore, the variation in the total inductance value of the inductance value between the second power semiconductor element 40B and the second control terminal 53B in each second power semiconductor element 40B and the inductance value between the second power semiconductor element 40B and the second detection terminal 54B is reduced. As a result, in the power module 1A of the present embodiment, even when high-speed switching is performed using SiC MOSFETs as each of the first power semiconductor elements 40A and each of the second power semiconductor elements 40B, it is possible to suppress the occurrence of ringing, as shown in FIG.

[0169] (effect) According to the power module 1A of this embodiment, the following effects can be obtained. (1-1) The first control layer 21 has a first control-side detour portion 21b, and the first drive layer 24 has a first drive-side detour portion 24b. This reduces the variation in the total length of the first control-side conduction paths and the first drive-side conduction paths for the multiple first power semiconductor elements 40A, thereby reducing the variation in inductance values ​​caused by these lengths. This reduces the occurrence of ringing in the multiple first power semiconductor elements 40A, allowing the power module 1A to operate stably.

[0170] (1-2) In a plan view, the power module 1A has a shape in which the horizontal direction X is the long side direction and the vertical direction Y is the short side direction. The first control-side detour portion 21b of the first control layer 21 is disposed apart from the first control-side wiring portion 21a in the vertical direction Y and extends along the horizontal direction X. The first drive-side detour portion 24b of the first drive layer 24 is disposed apart from the first drive-side wiring portion 24a in the vertical direction Y and extends along the horizontal direction X. The second drive-side detour portion 27b of the second drive layer 27 is disposed apart from the second drive-side wiring portion 27a in the vertical direction Y and extends along the horizontal direction X. The second control-side detour portion 26b of the second control layer 26 is disposed apart from the second control-side wiring portion 26a in the vertical direction Y and extends along the horizontal direction X. In this way, since the detour sections 21b, 24b, 26b, and 27b extend in the lateral direction X, which is the direction of the long sides of the power module 1A, it is possible to prevent the power module 1A from becoming large in size in the longitudinal direction Y.

[0171] (1-3) The first control layer 21 is made of a single member in which the first control-side wiring portion 21a, the first control-side detour portion 21b, and the first control-side coupling portion 21c are integrally formed. This configuration makes it easier to form the first control layer 21 on the first substrate 11 compared to, for example, a configuration in which the first control-side wiring portion 21a, the first control-side detour portion 21b, and the first control-side coupling portion 21c are individually formed and the first control-side wiring portion 21a, the first control-side detour portion 21b, and the first control-side coupling portion 21c are connected by wires.

[0172] Furthermore, the first drive layer 24 is made of a single member in which the first drive-side wiring portion 24a, the first drive-side detour portion 24b, and the first drive-side coupling portion 24c are integrally formed. With this configuration, it is easier to form the first drive layer 24 on the second substrate 12 compared to, for example, a configuration in which the first drive-side wiring portion 24a, the first drive-side detour portion 24b, and the first drive-side coupling portion 24c are formed separately and the first drive-side wiring portion 24a, the first drive-side detour portion 24b, and the first drive-side coupling portion 24c are connected by wires.

[0173] Furthermore, second drive layer 27 is made of a single member in which second drive-side wiring portion 27a, second drive-side detour portion 27b, and second drive-side coupling portion 27c are integrally formed. With this configuration, second drive layer 27 is easier to form on first substrate 11 than with a configuration in which second drive-side wiring portion 27a, second drive-side detour portion 27b, and second drive-side coupling portion 27c are individually formed and second drive-side wiring portion 27a, second drive-side detour portion 27b, and second drive-side coupling portion 27c are connected by wires.

[0174] Furthermore, the second control layer 26 is made of a single member in which the second control side wiring portion 26a, the second control side detour portion 26b, and the second control side coupling portion 26c are integrally formed. With this configuration, it is easier to form the second control layer 26 on the second substrate 12 compared to, for example, a configuration in which the second control side wiring portion 26a, the second control side detour portion 26b, and the second control side coupling portion 26c are formed separately and the second control side wiring portion 26a, the second control side detour portion 26b, and the second control side coupling portion 26c are connected by wires.

[0175] (1-4) In the vertical direction Y, the first drive layer 23 is disposed closer to the first mounting layer 13A than the first control layer 21. This configuration makes it possible to shorten the length of the first drive-side connecting member 33A that connects the first drive layer 23 to the source electrode 42 of each first power semiconductor element 40A on the first substrate 11. Therefore, it is possible to reduce the inductance caused by the first drive-side connecting member 33A.

[0176] Additionally, in the vertical direction Y, the first drive layer 24 is disposed closer to the first mounting layer 13B than the first control layer 22. This configuration allows the length of the first drive-side connecting member 33A that connects the first drive layer 24 to the source electrode 42 of each first power semiconductor element 40A on the second substrate 12 to be shortened. This reduces the inductance caused by the first drive-side connecting member 33A.

[0177] Additionally, in the vertical direction Y, the second drive layer 27 is disposed closer to the conductive layer 15A than the second control layer 25. This configuration makes it possible to shorten the length of the second drive-side connecting member 33B that connects the second drive layer 27 to the source electrode 42 of each second power semiconductor element 40B on the first substrate 11. Therefore, the inductance caused by the second drive-side connecting member 33B can be reduced.

[0178] Additionally, in the vertical direction Y, the second drive layer 28 is disposed closer to the conductive layer 15B than the second control layer 26. This configuration makes it possible to shorten the length of the second drive-side connecting member 33B that connects the second drive layer 28 to the source electrode 42 of each second power semiconductor element 40B on the second substrate 12. Therefore, the inductance caused by the second drive-side connecting member 33B can be reduced.

[0179] (1-5) The first control-side detour portion 21b of the first control layer 21 is disposed on the opposite side of the first control-side wiring portion 21a from the first drive layer 23 in the vertical direction Y. With this configuration, the first control-side detour portion 21b is disposed on the side of the sidewall 81A of the case 80, i.e., on the side closer to the first control terminal 53A in the vertical direction Y. This allows the length of the first control terminal-side connecting member 35A that connects the first control terminal 53A to the first control-side connecting portion 21d formed at the tip of the first control-side detour portion 21b. This allows the inductance caused by the first control terminal-side connecting member 35A to be reduced.

[0180] Furthermore, the second control-side detour portion 26b of the second control layer 26 is disposed on the opposite side of the second control-side wiring portion 26a from the second drive layer 28 in the vertical direction Y. With this configuration, the second control-side detour portion 26b is disposed on the side of the sidewall 81B of the case 80, i.e., on the side closer to the second control terminal 53B in the vertical direction Y. This allows the length of the second control terminal-side connecting member 35B that connects the second control terminal 53B to the second control-side connecting portion 26d formed at the tip of the second control-side detour portion 26b. This therefore allows the inductance caused by the second control terminal-side connecting member 35B to be reduced.

[0181] (1-6) The first drive-side detour portion 24b of the first drive layer 24 is disposed on the opposite side of the first control layer 22 from the first drive-side wiring portion 24a in the vertical direction Y. With this configuration, the first drive-side detour portion 24b is disposed on the side of the sidewall 81A of the case 80, i.e., on the side closer to the first detection terminal 54A in the vertical direction Y. This allows the length of the first detection terminal-side connecting member 36A that connects the first drive-side connecting portion 24d formed at the tip of the first drive-side detour portion 24b to the first detection terminal 54A to be shortened. This allows the inductance caused by the first detection terminal-side connecting member 36A to be reduced.

[0182] Furthermore, the second drive-side detour portion 27b of the second drive layer 27 is disposed on the opposite side of the second control layer 25 from the second drive-side wiring portion 27a in the vertical direction Y. With this configuration, the second drive-side detour portion 27b is disposed on the side of the sidewall 81A of the case 80, i.e., on the side closer to the second detection terminal 54B in the vertical direction Y. This allows the length of the second detection terminal-side connecting member 36B that connects the second drive-side connecting portion 27d formed at the tip of the second drive-side detour portion 27b to the second detection terminal 54B to be shortened. This allows the inductance caused by the second detection terminal-side connecting member 36B to be reduced.

[0183] (1-7) The first control-side connecting member 32A is not connected to the first control-side detour portion 21b of the first control layer 21. The first control-side connecting member 32A is connected to the first control-side wiring portion 21a. With this configuration, the length of the first control-side conductive path between the gate electrode 43 of the first power semiconductor element 40A on the first substrate 11 and the first control terminal 53A increases in order from the first power semiconductor element 40Ab closest to the third substrate side surface 11c among the multiple first power semiconductor elements 40A on the first substrate 11 to the first power semiconductor element 40Aa closest to the fourth substrate side surface 11d. On the other hand, since the length of the first drive-side conductive path between the source electrode 42 of the first power semiconductor element 40A on the first substrate 11 and the first detection terminal 54A increases in order from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab, variation in the total length of the first control-side conductive path and the length of the first drive-side conductive path in the multiple first power semiconductor elements 40A on the first substrate 11 can be suppressed.

[0184] Furthermore, the first drive-side connecting member 33A is not connected to the first drive-side detour portion 24b of the first drive layer 24. The first drive-side connecting member 33A is connected to the first drive-side wiring portion 24a. With this configuration, the length of the first drive-side conductive path between the source electrode 42 of the first power semiconductor element 40A and the first detection terminal 54A increases in order from the first power semiconductor element 40Ad closest to the fourth substrate side surface 12d among the multiple first power semiconductor elements 40A on the second substrate 12 to the first power semiconductor element 40Ac closest to the third substrate side surface 12c. On the other hand, the length of the first control side conductive path between the gate electrode 43 of the first power semiconductor element 40A on the second substrate 12 and the first control terminal 53A increases in order from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad, so that the variation in the total length of the first control side conductive path and the length of the first drive side conductive path in the multiple first power semiconductor elements 40A on the second substrate 12 can be suppressed.

[0185] Furthermore, the second drive-side connecting member 33B is not connected to the second drive-side detour portion 27b of the second drive layer 27. The second drive-side connecting member 33B is connected to the second drive-side wiring portion 27a. With this configuration, the length of the second drive-side conductive path between the source electrode 42 of the second power semiconductor element 40B on the first substrate 11 and the second detection terminal 54B increases in order from the second power semiconductor element 40Bb closest to the third substrate side surface 11c among the multiple second power semiconductor elements 40B on the first substrate 11 to the second power semiconductor element 40Ba closest to the fourth substrate side surface 11d. On the other hand, the length of the second control side conductive path between the gate electrode 43 of the second power semiconductor element 40B on the first substrate 11 and the second control terminal 53B increases in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb, so that the variation in the total length of the second control side conductive path and the length of the second drive side conductive path in the multiple second power semiconductor elements 40B on the first substrate 11 can be suppressed.

[0186] Furthermore, the second control side connecting member 32B is not connected to the second control side detour portion 26b of the second control layer 26. The second control side connecting member 32B is connected to the second control side wiring portion 26a. With this configuration, the length of the second control side conductive path between the gate electrode 43 of the second power semiconductor element 40B on the second substrate 12 and the second control terminal 53B increases in order from the second power semiconductor element 40Bd closest to the fourth substrate side surface 12d among the multiple second power semiconductor elements 40B on the second substrate 12 to the second power semiconductor element 40Bc closest to the third substrate side surface 12c. On the other hand, since the length of the second drive-side conductive path between the source electrode 42 of the second power semiconductor element 40B on the second substrate 12 and the second detection terminal 54B increases in order from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd, variation in the total length of the second control-side conductive path and the length of the second drive-side conductive path in the multiple second power semiconductor elements 40B on the second substrate 12 can be suppressed.

[0187] (1-8) The first control-side connecting members 32A connected to the plurality of first power semiconductor elements 40A extend along the vertical direction Y. The first drive-side connecting members 33A connected to the plurality of first power semiconductor elements 40A extend along the vertical direction Y. The second control-side connecting members 32B connected to the plurality of second power semiconductor elements 40B extend along the vertical direction Y. The second drive-side connecting members 33B connected to the plurality of second power semiconductor elements 40B extend along the vertical direction Y. These configurations make it easier to form the connecting members 32A, 32B, 33A, 33B by wire bonding.

[0188] (1-9) The first control side connecting portion 21d of the first control layer 21 extends in the vertical direction Y and overlaps with the first control layer 22 when viewed from the horizontal direction X. This makes it easier to form the first control layer connecting member 93A that connects the first control side connecting portion 21d and the first control layer 22 along the horizontal direction X.

[0189] Furthermore, the first drive side connecting portion 24d of the first drive layer 24 extends in the vertical direction Y and overlaps with the first drive layer 23 when viewed from the horizontal direction X. This makes it easier to form the first drive layer connecting member 94A that connects the first drive side connecting portion 24d and the first drive layer 23 along the horizontal direction X.

[0190] Additionally, second drive side connecting portion 27d of second drive layer 27 extends in vertical direction Y and overlaps with second drive layer 28 when viewed from horizontal direction X. This makes it easier to form second drive layer connecting member 94B that connects second drive side connecting portion 27d and second drive layer 28 along horizontal direction X.

[0191] Additionally, the second control side connecting portion 26d of the second control layer 26 extends in the vertical direction Y and overlaps with the second control layer 25 when viewed from the horizontal direction X. This makes it easier to form the second control layer connecting member 93B that connects the second control side connecting portion 26d and the second control layer 25 along the horizontal direction X.

[0192] [Second embodiment] A power module 1B of the second embodiment will be described with reference to Figs. 26 to 32. The power module 1B of the second embodiment differs from the power module 1A of the first embodiment mainly in the configurations of the control layer and the drive layer. Below, differences from the power module 1A of the first embodiment will be described in detail, and components common to the power module 1A of the first embodiment will be given the same reference numerals and their description may be omitted. Note that the two-dot chain lines in Figs. 28, 29, 31, and 32 are auxiliary lines to clarify the positional relationship between the control layers and the drive layers.

[0193] As shown in FIGS. 26 to 28, the first control layer 21 has a first control-side wiring portion 21a, a first control-side detour portion 21b, and a first control-side coupling portion 21c. In this embodiment, the first control-side wiring portion 21a, the first control-side detour portion 21b, and the first control-side coupling portion 21c are formed separately. The first control-side wiring portion 21a and the first control-side detour portion 21b are each made of, for example, copper foil. The first control-side coupling portion 21c is made of, for example, a wire formed by wire bonding. The first control-side coupling portion 21c is made of, for example, Au, an Au alloy, Al, an Al alloy, Cu, or a Cu alloy.

[0194] The first control-side wiring portion 21a and the first control-side detour portion 21b each extend in the horizontal direction X. The first control-side detour portion 21b is disposed on the opposite side of the first drive layer 23 with respect to the first control-side wiring portion 21a in the vertical direction Y. An end portion of the first control-side wiring portion 21a facing the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X and an end portion of the first control-side detour portion 21b facing the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X are aligned in the horizontal direction X. These ends are aligned with the interlayer connection portion 13c of the first mounting layer 13A as viewed in the vertical direction Y. That is, these ends are located closer to the fourth substrate side surface 11d of the first substrate 11 than the first power semiconductor element 40Aa, which is the first power semiconductor element 40A that is closest to the fourth substrate side surface 11d of the first substrate 11, among the multiple first power semiconductor elements 40A. The length of the first control-side wiring portion 21a in the horizontal direction X is longer than the length of the first control-side detour portion 21b in the horizontal direction X. That is, the end portion of the first control-side wiring portion 21a in the horizontal direction X that is on the side of the third substrate side surface 11c of the first substrate 11 is positioned closer to the third substrate side surface 11c than the end portion of the first control-side detour portion 21b in the horizontal direction X that is on the side of the third substrate side surface 11c of the first substrate 11.

[0195] The first control-side wiring portion 21a is formed so as to overlap with the plurality of first power semiconductor elements 40A when viewed from the vertical direction Y. An end portion of the first control-side wiring portion 21a on the side of the third substrate side surface 11c of the first substrate 11 in the horizontal direction X is formed so as to overlap with an end portion of a first power semiconductor element 40Ab that is closest to the third substrate side surface 11c of the first substrate 11, on the side of the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X.

[0196] The first control-side wiring portion 21a is connected to first control-side connecting members 32A, which are connected to each of the multiple first power semiconductor elements 40A on the first substrate 11. The multiple first control-side connecting members 32A are arranged at a distance from each other in the horizontal direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first control-side connecting members 32A connected to four of the multiple first power semiconductor elements 40A, excluding the first power semiconductor element 40Ab that is arranged closest to the third substrate side surface 11c of the first substrate 11, each extend along the vertical direction Y in a plan view. Because the gate electrode 43 of the first power semiconductor element 40Ab is arranged closer to the third substrate side surface 11c of the first substrate 11 than the first control-side wiring portion 21a, the first control-side connecting member 32A connected to the first power semiconductor element 40Ab extends obliquely toward the fourth substrate side surface 11d as it approaches the first substrate side surface 11a of the first substrate 11.

[0197] The first control-side detour portion 21b is formed so as to overlap with the first power semiconductor elements 40A other than the first power semiconductor element 40Ab when viewed from the vertical direction Y. That is, the end of the first control-side detour portion 21b on the side of the third substrate side surface 11c of the first substrate 11 in the horizontal direction X is located closer to the fourth substrate side surface 11d of the first substrate 11 than the first power semiconductor element 40Ab. As can be seen from FIGS. 26 to 28, the first control-side connecting member 32A is not connected to the first control-side detour portion 21b.

[0198] The first control-side coupling portion 21c connects an end portion of the first control-side wiring portion 21a that is closer to the third substrate side surface 11c of the first substrate 11 in the lateral direction X to an end portion of the first control-side detour portion 21b that is closer to the third substrate side surface 11c of the first substrate 11 in the lateral direction X. This electrically connects the first control-side wiring portion 21a and the first control-side detour portion 21b. The first control-side coupling portion 21c is arranged closer to the third substrate side surface 11c of the first substrate 11 than the first control-side connecting member 32A that is connected to the first power semiconductor element 40Ab. The first control-side coupling portion 21c extends obliquely toward the fourth substrate side surface 11d as it approaches the first substrate side surface 11a of the first substrate 11.

[0199] The first drive layer 23 extends along the horizontal direction X. The first drive layer 23 is disposed adjacent to the first mounting layer 13A in the vertical direction Y. In the vertical direction Y, the first drive layer 23 is disposed between the first control-side wiring unit 21a and the first mounting layer 13A. The length of the first drive layer 23 in the horizontal direction X is longer than the length of the first control-side wiring unit 21a in the horizontal direction X and the length of the first control-side detour unit 21b in the horizontal direction X. An end of the first drive layer 23 on the side of the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X is aligned with an end of the first control-side wiring unit 21a on the side of the fourth substrate side surface 11d in the horizontal direction X and an end of the first control-side detour unit 21b on the side of the fourth substrate side surface 11d in the horizontal direction X. When viewed in the vertical direction Y, the first drive layer 23 overlaps with the multiple first power semiconductor elements 40A of the first substrate 11. Furthermore, when viewed in the vertical direction Y, the first driving layer 23 overlaps with the thermistor mounting layer 16.

[0200] The first drive layer 23 is connected to first drive-side connecting members 33A, each connected to one of the plurality of first power semiconductor elements 40A of the first substrate 11. The plurality of first drive-side connecting members 33A are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first drive-side connecting members 33A connected to four of the plurality of first power semiconductor elements 40A, excluding the first power semiconductor element 40Ab that is arranged closest to the third substrate side surface 11c of the first substrate 11, each extend along the vertical direction Y in a plan view. The first drive-side connecting member 33A connected to the first power semiconductor element 40Ab extends obliquely toward the fourth substrate side surface 11d as it approaches the first substrate side surface 11a of the first substrate 11.

[0201] The thermistor mounting layer 16 has a different orientation relative to the first substrate 11 than the thermistor mounting layer 16 of the first embodiment. The thermistor mounting layer 16 is disposed in a state rotated 90° clockwise relative to the thermistor mounting layer 16 of the first embodiment. When viewed from the horizontal direction X, the thermistor mounting layer 16 overlaps with the first control layer 21. In the vertical direction Y, the thermistor mounting layer 16 is disposed closer to the first substrate side surface 11a of the first substrate 11 than the first drive layer 23.

[0202] As shown in FIGS. 27 and 29, the first drive layer 24 includes a first drive wiring portion 24a, a first drive detour portion 24b, a first drive coupling portion 24c, and a first drive connection portion 24d. In this embodiment, the first drive wiring portion 24a, the first drive detour portion 24b, and the first drive coupling portion 24c are formed individually, while the first drive detour portion 24b and the first drive connection portion 24d are formed integrally. The first drive wiring portion 24a, the first drive detour portion 24b, and the first drive connection portion 24d are each made of, for example, copper foil. The first drive coupling portion 24c is made of a wire formed by, for example, wire bonding. The first drive coupling portion 24c is made of, for example, Au, an Au alloy, Al, an Al alloy, Cu, or a Cu alloy.

[0203] The first drive-side wiring portion 24a and the first drive-side detour portion 24b each extend in the horizontal direction X. The first drive-side detour portion 24b is disposed on the opposite side of the first drive layer 24 from the first drive-side wiring portion 24a in the vertical direction Y. The end of the first drive-side wiring portion 24a facing the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X and the end of the first drive-side detour portion 24b facing the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X are aligned in the horizontal direction X. These ends are adjacent to the interlayer connection portion 13f of the first mounting layer 13B when viewed from the vertical direction Y. The length of the first drive-side detour portion 24b in the horizontal direction X is slightly longer than the length of the first drive-side wiring portion 24a in the horizontal direction X.

[0204] The first driving-side wiring portion 24a is formed so as to overlap with the plurality of first power semiconductor elements 40A when viewed from the vertical direction Y. An end portion of the first driving-side wiring portion 24a in the horizontal direction X that is on the side of the fourth substrate side surface 12d of the second substrate 12 is formed so as to overlap with an end portion of the first power semiconductor element 40Ad that is closest to the fourth substrate side surface 12d of the second substrate 12, among the plurality of first power semiconductor elements 40A, that is on the side of the third substrate side surface 12c of the second substrate 12 in the horizontal direction X.

[0205] The first drive-side wiring 24a is connected to first drive-side connecting members 33A, which are connected to each of the multiple first power semiconductor elements 40A on the second substrate 12. The multiple first drive-side connecting members 33A are arranged at a distance from each other in the horizontal direction X, which is the same direction as the arrangement direction of the multiple first power semiconductor elements 40A. The first drive-side connecting members 33A connected to four of the multiple first power semiconductor elements 40A other than the first power semiconductor element 40Ad each extend along the vertical direction Y in a plan view. Because the gate electrode 43 of the first power semiconductor element 40Ad is disposed closer to the fourth substrate side surface 12d of the second substrate 12 than the first drive-side wiring 24a, the first drive-side connecting member 33A connected to the first power semiconductor element 40Ad extends obliquely toward the third substrate side surface 12c as it approaches the first substrate side surface 12a of the second substrate 12.

[0206] The first driving-side detour portion 24b is formed to overlap the first power semiconductor element 40A when viewed from the vertical direction Y. As can be seen from Figures 26, 27, and 29, the first driving-side connecting member 33A is not connected to the first driving-side detour portion 24b.

[0207] The first drive-side coupling portion 24c couples, in the horizontal direction X, a portion of the first drive-side wiring portion 24a that faces the fourth substrate side surface 12d of the second substrate 12 and a portion of the first drive-side detour portion 24b that faces the fourth substrate side surface 12d of the second substrate 12. In a plan view, the first drive-side coupling portion 24c extends along the vertical direction Y. The first drive-side coupling portion 24c is formed to straddle the first control layer 22.

[0208] The first drive-side connection portion 24d is formed at an end of the first drive-side detour portion 24b in the horizontal direction X that is closer to the third substrate side surface 12c of the second substrate 12. The first drive-side connection portion 24d is located closer to the third substrate side surface 12c of the second substrate 12 than the first drive-side wiring portion 24a in the horizontal direction X. The first drive-side connection portion 24d extends in the vertical direction Y. In the vertical direction Y, the first drive-side connection portion 24d is disposed adjacent to the interlayer connection portion 13f of the first mounting layer 13B. The width dimension of the first drive-side connection portion 24d (the dimension of the first drive-side connection portion 24d in the horizontal direction X) is larger than the width dimension of the first drive-side detour portion 24b (the dimension of the first drive-side detour portion 24b in the vertical direction Y). The first drive side connection portion 24d is arranged spaced apart from the first drive side wiring portion 24a in the horizontal direction X, with the edge of the first drive side connection portion 24d on the first mounting layer 13B side in the vertical direction Y aligned with the edge of the first drive side wiring portion 24a on the first mounting layer 13B side in the vertical direction Y.

[0209] The first control layer 22 is disposed between the first drive-side wiring portion 24a and the first drive-side detour portion 24b of the first drive layer 24 in the vertical direction Y. The first control layer 22 extends along the horizontal direction X. The first control layer 22 has a narrow strip shape in plan view. In this embodiment, the width of the first control layer 22 (the dimension of the first control layer 22 in the vertical direction Y) is equal to the width of the first drive-side wiring portion 24a of the first drive layer 24 (the dimension of the first drive-side wiring portion 24a in the vertical direction Y). The width of the first control layer 22 is also equal to the width of the first drive-side detour portion 24b of the first drive layer 24 (the dimension of the first drive-side detour portion 24b in the vertical direction Y).

[0210] Here, if the difference between the vertical dimension Y of the first control layer 22 and the vertical dimension Y of the first drive-side wiring portion 24a in the first drive layer 24 is, for example, within 5% of the vertical dimension Y of the first drive-side wiring portion 24a in the first drive layer 24, then it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side wiring portion 24a in the first drive layer 24. Also, if the difference between the vertical dimension Y of the first control layer 22 and the vertical dimension Y of the first drive-side detour portion 24b in the first drive layer 24 is, for example, within 5% of the vertical dimension Y of the first drive-side detour portion 24b in the first drive layer 24, then it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side detour portion 24b in the first drive layer 24.

[0211] The length in the horizontal direction X of the first control layer 22 is equal to the length in the horizontal direction X of the first drive-side wiring portion 24a of the first drive layer 24. When viewed in the vertical direction Y, the end of the first control layer 22 on the side of the third substrate side surface 12c of the second substrate 12 in the horizontal direction X is aligned with the end 24e of the first drive-side wiring portion 24a of the first drive layer 24. Furthermore, the end of the first control layer 22 on the side of the third substrate side surface 12c of the second substrate 12 in the horizontal direction X is adjacent to the interlayer connection portion 13f of the first mounting layer 13B in the horizontal direction X. When viewed in the horizontal direction X, the first control layer 22 overlaps with the first drive-side connection portion 24d of the first drive layer 24.

[0212] The first control layer 22 is connected to first control side connecting members 32A, each connected to one of the plurality of first power semiconductor elements 40A of the second substrate 12. The plurality of first control side connecting members 32A are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first control side connecting members 32A connected to four of the plurality of first power semiconductor elements 40A, excluding the first power semiconductor element 40Ad arranged closest to the fourth substrate side surface 12d of the second substrate 12, each extend along the vertical direction Y in a plan view. Because the gate electrode 43 of the first power semiconductor element 40Ad is arranged closer to the fourth substrate side surface 12d of the second substrate 12 than the first control layer 22, the first control side connecting member 32A connected to the first power semiconductor element 40Ad extends obliquely toward the third substrate side surface 12c as it approaches the first substrate side surface 12a of the second substrate 12.

[0213] 26 to 29, a first control terminal side connecting member 35A is connected to a portion of the first control side detour portion 21b in the horizontal direction X that is on the side of the fourth substrate side surface 11d of the first substrate 11. When viewed in the vertical direction Y, the first control terminal side connecting member 35A is formed to overlap with the first power semiconductor element 40Aa.

[0214] A first control layer connecting member 93A is connected to an end of the first control-side detour portion 21b on the side of the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X. The first control layer connecting member 93A is located closer to the fourth substrate side surface 11d of the first substrate 11 than the first power semiconductor element 40Aa. The first control layer connecting member 93A is also connected to an end of the first control layer 22 on the side of the third substrate side surface 12c of the second substrate 12 in the horizontal direction X. Because the first control-side detour portion 21b is located closer to the sidewall 81A of the case 80 than the first control layer 22 in the vertical direction Y, in a plan view, the first control layer connecting member 93A extends obliquely toward the sidewall 81A as it moves from the first control layer 22 toward the first control layer 21. As can be seen from FIG. 26 , the first control layer connecting member 93A is formed to straddle the first drive-side connection portion 24d of the first drive layer 24 in the horizontal direction X.

[0215] The first driving-side detour portion 24b is connected to a first detection terminal-side connecting member 36A. More specifically, the first detection terminal-side connecting member 36A is connected to an end of the first driving-side detour portion 24b in the lateral direction X that is closer to the first driving-side connecting portion 24d.

[0216] A first drive layer connecting member 94A is connected to an end of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the horizontal direction X. The first drive layer connecting member 94A is connected to an end of the first drive side connecting portion 24d on the first mounting layer 13B side in the vertical direction Y. In a plan view, the first drive layer connecting member 94A extends along the horizontal direction X.

[0217] As shown in FIGS. 30 and 31 , the second drive layer 27 has a second drive-side wiring portion 27a, a second drive-side detour portion 27b, a second drive-side coupling portion 27c, and a second drive-side connection portion 27d. In this embodiment, the second drive-side wiring portion 27a, the second drive-side detour portion 27b, and the second drive-side coupling portion 27c are formed individually, while the second drive-side detour portion 27b and the second drive-side connection portion 27d are formed integrally. The second drive-side wiring portion 27a, the second drive-side detour portion 27b, and the second drive-side connection portion 27d are each made of, for example, copper foil. The second drive-side coupling portion 27c is a wire formed by wire bonding. The second drive-side wiring portion 27a and the second drive-side detour portion 27b each have a narrow strip shape in a plan view.

[0218] The second driving-side wiring portion 27a extends along the horizontal direction X. In the vertical direction Y, the second driving-side wiring portion 27a is disposed adjacent to the conductive layer 15A. An end portion 27e of the second driving-side wiring portion 27a in the horizontal direction X, which is located on the fourth substrate side surface 11d side of the first substrate 11, is located closer to the fourth substrate side surface 11d of the first substrate 11 than a second power semiconductor element 40Ba, of the multiple second power semiconductor elements 40B, that is closest to the fourth substrate side surface 11d. An end portion 27f of the second driving-side wiring portion 27a in the horizontal direction X, which is located on the third substrate side surface 11c side of the first substrate 11, is located closer to the third substrate side surface 11c of the first substrate 11 than a second power semiconductor element 40Bb, of the multiple second power semiconductor elements 40B, that is closest to the third substrate side surface 11c. That is, when viewed in the vertical direction Y, the second drive-side wiring portion 27a extends in the horizontal direction X so as to overlap all of the second power semiconductor elements 40B arranged on the first substrate 11.

[0219] The second driving-side wiring portion 27a is connected to second driving-side connecting members 33B, which are connected to the second power semiconductor elements 40B, respectively. The second driving-side connecting members 33B are arranged at a distance from one another in the horizontal direction X, which is the same direction as the arrangement direction of the second power semiconductor elements 40B. The second driving-side connecting members 33B connected to the second power semiconductor elements 40B each extend along the vertical direction Y in a plan view.

[0220] The second drive-side detour portion 27b is disposed apart from the second drive-side wiring portion 27a in the vertical direction Y. The second drive-side detour portion 27b is disposed on the opposite side of the second drive-side wiring portion 27a from the conductive layer 15A side in the vertical direction Y. The second drive-side detour portion 27b is disposed closer to the second substrate side surface 11b of the first substrate 11 than the second control layer 25 in the vertical direction Y. The second drive-side detour portion 27b is disposed adjacent to the second substrate side surface 11b of the first substrate 11 in the vertical direction Y. The second drive-side detour portion 27b extends along the horizontal direction X. The length of the second drive-side detour portion 27b in the horizontal direction X is slightly longer than the length of the second drive-side wiring portion 27a in the horizontal direction X. As can be seen from FIG. 31 , the second drive-side connecting member 33B is not connected to the second drive-side detour portion 27b.

[0221] The second drive-side coupling portion 27c couples the second drive-side wiring portion 27a and the second drive-side detour portion 27b. More specifically, the second drive-side coupling portion 27c couples an end portion of the second drive-side wiring portion 27a that is closer to the third substrate side surface 11c of the first substrate 11 in the horizontal direction X to an end portion of the second drive-side detour portion 27b that is closer to the third substrate side surface 11c in the horizontal direction X. The second drive-side coupling portion 27c extends in the vertical direction Y. As viewed in the vertical direction Y, the second drive-side coupling portion 27c is arranged to overlap an end portion of the second power semiconductor element 40Bb that is closest to the third substrate side surface 11c, that is closer to the third substrate side surface 11c of the first substrate 11 in the horizontal direction X. In the horizontal direction X, the second drive side connecting portion 27c is positioned closer to the third substrate side surface 11c of the first substrate 11 than the second control side connecting member 32B and the second drive side connecting member 33B connected to the second power semiconductor element 40Bb.

[0222] The second drive-side connection portion 27d is formed at the tip end of the second drive-side detour portion 27b. The second drive-side connection portion 27d is located closer to the fourth substrate side surface 11d of the first substrate 11 in the horizontal direction X than the second drive-side wiring portion 27a. The second drive-side connection portion 27d extends in the vertical direction Y. The width dimension of the second drive-side connection portion 27d (the dimension of the second drive-side connection portion 27d in the horizontal direction X) is larger than the width dimension of the second drive-side detour portion 27b (the dimension of the second drive-side detour portion 27b in the vertical direction Y). The second drive-side connection portion 27d is disposed spaced apart from the second drive-side wiring portion 27a in the horizontal direction X, with the edge of the second drive-side connection portion 27d on the conductive layer 15A side in the vertical direction Y aligned with the edge of the second drive-side wiring portion 27a on the conductive layer 15A side in the vertical direction Y.

[0223] The second control layer 25 extends along the horizontal direction X. In a plan view, the second control layer 25 has a narrow strip shape. In the vertical direction Y, the second control layer 25 is disposed between the second drive-side wiring portion 27a and the second drive-side detour portion 27b. In this embodiment, the width dimension of the second control layer 25 (the dimension of the second control layer 25 in the vertical direction Y) is equal to the width dimension of the second drive-side wiring portion 27a in the second drive layer 27 (the dimension of the second drive-side wiring portion 27a in the vertical direction Y). In addition, the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side detour portion 27b in the second drive layer 27 (the dimension of the second drive-side detour portion 27b in the vertical direction Y).

[0224] Here, if the difference between the vertical dimension Y of second control layer 25 and the vertical dimension Y of second drive-side wiring portion 27a in second drive layer 27 is, for example, within 5% of the vertical dimension Y of second drive-side wiring portion 27a in second drive layer 27, then it can be said that the width dimension of second control layer 25 is equal to the width dimension of second drive-side wiring portion 27a in second drive layer 27. Also, if the difference between the vertical dimension Y of second control layer 25 and the vertical dimension Y of second drive-side detour portion 27b in second drive layer 27 is, for example, within 5% of the vertical dimension Y of second drive-side detour portion 27b in second drive layer 27, then it can be said that the width dimension of second control layer 25 is equal to the width dimension of second drive-side detour portion 27b in second drive layer 27.

[0225] The length in the horizontal direction X of the second control layer 25 is equal to the length in the horizontal direction X of the second drive-side wiring portion 27a of the second drive layer 27. In the vertical direction Y, both ends in the horizontal direction X of the second control layer 25 are aligned with both ends in the horizontal direction X of the second drive-side wiring portion 27a of the second drive layer 27.

[0226] The second control layer 25 is connected to second control side connecting members 32B, each connected to a corresponding one of the plurality of second power semiconductor elements 40B. The plurality of second control side connecting members 32B are arranged spaced apart from one another in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second control side connecting members 32B connected to the plurality of second power semiconductor elements 40B extend along the vertical direction Y in a plan view. A first driving layer connecting member 94A is connected to an end of the first driving layer 23 in the horizontal direction X that is on the side of the fourth substrate side surface 11d of the first substrate 11.

[0227] As shown in FIGS. 30 and 32, the second control layer 26 has a second control-side wiring portion 26a, a second control-side detour portion 26b, and a second control-side coupling portion 26c. In this embodiment, the second control-side wiring portion 26a, the second control-side detour portion 26b, and the second control-side coupling portion 26c are formed separately. The second control-side wiring portion 26a, the second control-side detour portion 26b, and the second control-side connecting portion 26d are each made of, for example, copper foil. The second control-side coupling portion 26c is a wire formed by wire bonding. In a plan view, the second control-side wiring portion 26a and the second control-side detour portion 26b each have a narrow strip shape.

[0228] The second control-side wiring portion 26a extends along the lateral direction X. An end portion 26e of the second control-side wiring portion 26a in the lateral direction X, which is located on the third substrate side surface 12c side of the second substrate 12, is located closer to the third substrate side surface 12c of the second substrate 12 than a second power semiconductor element 40Bc, of the multiple second power semiconductor elements 40B, that is closest to the third substrate side surface 12c. An end portion 26f of the second control-side wiring portion 26a in the lateral direction X, which is located on the fourth substrate side surface 12d side of the second substrate 12, is located closer to the fourth substrate side surface 12d of the second substrate 12 than a second power semiconductor element 40Bd, of the multiple second power semiconductor elements 40B, that is closest to the fourth substrate side surface 12d.

[0229] The second control side wiring portion 26a is connected to second control side connecting members 32B, which are respectively connected to the plurality of second power semiconductor elements 40B. The plurality of second control side connecting members 32B are arranged at a distance from each other in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second control side connecting members 32B connected to the plurality of second power semiconductor elements 40B extend along the vertical direction Y in a plan view.

[0230] The second control-side detour portion 26b is disposed apart from the second control-side wiring portion 26a in the vertical direction Y. The second control-side detour portion 26b is disposed on the opposite side of the second drive layer 28 from the second control-side wiring portion 26a in the vertical direction Y. The second control-side detour portion 26b is disposed adjacent to the second substrate side surface 12b of the second substrate 12 in the vertical direction Y. The second control-side detour portion 26b extends along the horizontal direction X. The length of the second control-side detour portion 26b in the horizontal direction X is equal to the length of the second control-side wiring portion 26a in the horizontal direction X. Both ends of the second control-side detour portion 26b in the horizontal direction X are aligned with both ends of the second control-side wiring portion 26a in the horizontal direction X. As can be seen from FIG. 32 , the second control-side connecting member 32B is not connected to the second control-side detour portion 26b.

[0231] The second control side coupling portion 26c couples the second control side wiring portion 26a and the second control side detour portion 26b. More specifically, the second control side coupling portion 26c couples an end portion of the second control side wiring portion 26a that is closer to the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X to an end portion of the second control side detour portion 26b that is closer to the fourth substrate side surface 12d in the horizontal direction X. The second control side coupling portion 26c extends in the vertical direction Y. When viewed in the vertical direction Y, the second control side coupling portion 26c is arranged so as to overlap with a second power semiconductor element 40Bd that is closest to the fourth substrate side surface 12d of the second substrate 12 in the horizontal direction X, among the multiple second power semiconductor elements 40B. In the horizontal direction X, the second control side connecting portion 26c is located closer to the fourth substrate side surface 12d of the second substrate 12 than the second control side connecting member 32B and the second drive side connecting member 33B connected to the second power semiconductor element 40Bd.

[0232] The second drive layer 28 extends along the horizontal direction X. In a plan view, the second drive layer 28 has a narrow strip shape. In the vertical direction Y, the second drive layer 28 is disposed adjacent to the conductive layer 15B. In this embodiment, the width dimension of the second drive layer 28 (the dimension of the second drive layer 28 in the vertical direction Y) is equal to the width dimension of the second control side wiring section 26a in the second control layer 26 (the dimension of the second control side wiring section 26a in the vertical direction Y). In addition, the width dimension of the second drive layer 28 is equal to the width dimension of the second control side detour section 26b in the second control layer 26 (the dimension of the second control side detour section 26b in the vertical direction Y).

[0233] Here, if the difference between the dimension in the vertical direction Y of the second drive layer 28 and the dimension in the vertical direction Y of the second control side wiring portion 26a in the second control layer 26 is, for example, within 5% of the dimension in the vertical direction Y of the second control side wiring portion 26a in the second control layer 26, then it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control side wiring portion 26a in the second control layer 26. Furthermore, if the difference between the dimension in the vertical direction Y of the second drive layer 28 and the dimension in the vertical direction Y of the second control side detour portion 26b in the second control layer 26 is, for example, within 5% of the dimension in the vertical direction Y of the second control side detour portion 26b in the second control layer 26, then it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control side detour portion 26b in the second control layer 26.

[0234] The length in the horizontal direction X of the second drive layer 28 is equal to the length in the horizontal direction X of the second control-side wiring portion 26a of the second control layer 26. Both end portions of the second drive layer 28 in the horizontal direction X are aligned with both end portions of the second control-side wiring portion 26a of the second control layer 26 in the horizontal direction X. Furthermore, the length in the horizontal direction X of the second drive layer 28 is equal to the length in the horizontal direction X of the second control-side detour portion 26b of the second control layer 26. Both end portions of the second drive layer 28 in the horizontal direction X are aligned with both end portions of the second control-side detour portion 26b of the second control layer 26 in the horizontal direction X.

[0235] Second drive-side connecting members 33B are connected to the second drive layer 28, and are connected to the second power semiconductor elements 40B of the second substrate 12, respectively. The second drive-side connecting members 33B are arranged spaced apart from one another in the horizontal direction X, which is the same direction as the arrangement of the second power semiconductor elements 40B. The second drive-side connecting members 33B connected to the second power semiconductor elements 40B extend along the vertical direction Y in a plan view.

[0236] 30 to 32, the second driving-side detour portion 27b is connected to the second detection terminal-side connecting member 36B. More specifically, the second detection terminal-side connecting member 36B is connected to the end of the second driving-side detour portion 27b in the lateral direction X that is on the second driving-side connecting portion 27d side.

[0237] A second drive layer connecting member 94B is connected to the second drive side connecting portion 27d. More specifically, the second drive layer connecting member 94B is connected to an end of the second drive side connecting portion 27d on the conductive layer 15A side in the vertical direction Y. The second drive layer connecting member 94B is also connected to an end of the second drive layer 28 on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X. In a plan view, the second drive layer connecting member 94B extends along the horizontal direction X.

[0238] A second control terminal side connecting member 35B and a second control layer connecting member 93B are connected to the second control side detour portion 26b. The second control terminal side connecting member 35B is connected to a portion of the second control side detour portion 26b in the lateral direction X that faces the third substrate side surface 12c of the second substrate 12. The second control layer connecting member 93B is connected to an end portion 26e of the second control side detour portion 26b in the lateral direction X that faces the third substrate side surface 12c of the second substrate 12. The second control layer connecting member 93B is also connected to an end portion 25x of the second control layer 25 that faces the fourth substrate side surface 11d of the first substrate 11 in the lateral direction X. In the vertical direction Y, the end 26e of the second control-side detour portion 26b is located closer to the second substrate side surface 12b of the second substrate 12 than the end 25x of the second control layer 25. Therefore, in a plan view, the second control layer connecting member 93B extends obliquely from the end 25x of the second control layer 25 toward the second substrate side surface 12b of the second substrate 12. As can be seen from FIG. 32 , the second control layer connecting member 93B is formed to straddle the second drive-side connecting portion 27d of the second drive layer 27.

[0239] (Conductive path) Next, we will explain the control side conductive path, which is the first conductive path between each power semiconductor element 40A, 40B and each control terminal 53A, 53B, and the drive side conductive path, which is the second conductive path between each power semiconductor element 40A, 40B and each detection terminal 54A, 54B.

[0240] 27 , the first control-side conductive paths from the gate electrodes 43 of the multiple first power semiconductor elements 40A on the first substrate 11 to the first control terminals 53A are configured by the first control-side connecting members 32A, the first control layer 21, and the first control terminal-side connecting members 35A. For this reason, the first control-side conductive paths for the multiple first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Ab to the first power semiconductor element 40Aa. In other words, the difference in length of the first control-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the arrangement direction of the first power semiconductor elements 40A among the multiple first power semiconductor elements 40A, is greatest. In this case, the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Aa, is the longest, and the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ab, is the shortest.

[0241] The first drive-side conductive paths from the source electrodes 42 of the multiple first power semiconductor elements 40A on the first substrate 11 to the first detection terminals 54A are composed of the first drive-side connecting members 33A, the first drive layer 23, the first drive-layer connecting members 94A, the first drive-side connecting portions 24d of the first drive layer 24, and the first detection terminal connecting members 36A. For this reason, the first drive-side conductive paths for the multiple first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in length of the first drive-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction of the first power semiconductor elements 40A, are greatest. In this case, the first end drive side conductive path, which is the first drive side conductive path of the first power semiconductor element 40Aa, has the shortest length, and the second end drive side conductive path, which is the first drive side conductive path of the first power semiconductor element 40Ab, has the longest length.

[0242] The first control-side conductive paths from the gate electrodes 43 of the multiple first power semiconductor elements 40A on the second substrate 12 to the first control terminals 53A are composed of the first control-side connecting member 32A, the first control layer 22, the first control layer connecting member 93A, the first control layer 21, and the first control terminal-side connecting member 35A. For this reason, the first control-side conductive paths for the multiple first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ac toward the first power semiconductor element 40Ad. In other words, the difference in length of the first control-side conductive paths for the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends of the multiple first power semiconductor elements 40A in the arrangement direction of the first power semiconductor elements 40A, are greatest. In this case, the first end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ac, has the shortest length, and the second end control side conductive path, which is the first control side conductive path of the first power semiconductor element 40Ad, has the longest length.

[0243] The first drive-side conductive paths from the source electrodes 42 of the multiple first power semiconductor elements 40A on the second substrate 12 to the first detection terminals 54A are formed by the first drive-side connecting members 33A, the first drive layers 24, and the first detection terminal connecting members 36A. Therefore, the first drive-side conductive paths for the multiple first power semiconductor elements 40A on the second substrate 12 become longer in the order from the first power semiconductor element 40Ad to the first power semiconductor element 40Ac. In other words, the difference in length between the first drive-side conductive paths for the first power semiconductor element 40Ac as the first-end power semiconductor element and the first power semiconductor element 40Ad as the second-end power semiconductor element, which are located at both ends of the multiple first power semiconductor elements 40A in the arrangement direction, is greatest. In this case, the first-end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ac, is the longest, and the second-end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ad, is the shortest.

[0244] As described above, in this embodiment, the first control-side detour portion 21b and the first drive-side detour portion 24b are formed so as to reduce the variation in the total length of the first control-side conduction path and the first drive-side conduction path among the plurality of first power semiconductor elements 40A. That is, the power module 1B of this embodiment is configured such that the first control-side detour portion 21b and the first drive-side detour portion 24b cause the sums of the lengths of the first control-side conduction path, which is an example of a first conduction path, and the first drive-side conduction path, which is an example of a second conduction path, to become close to each other among the plurality of first power semiconductor elements 40A.

[0245] In addition, in this embodiment, the first control side bypass portion 21b and the first drive side bypass portion 24b are each formed so as to reduce the variation between the total length of the first end control side conductive path and the first end drive side conductive path and the total length of the second end control side conductive path and the second end drive side conductive path.

[0246] The sum of the length of the first-end control-side conductive path and the length of the first-end drive-side conductive path is an example of the "first sum" set forth in the claims. The sum of the length of the second-end control-side conductive path and the length of the second-end drive-side conductive path is an example of the "second sum" set forth in the claims. Therefore, the power module 1B of this embodiment is configured such that the first sum approaches the second sum by the first control-side detour section 21b and the first drive-side detour section 24b.

[0247] 30 , the second control-side conductive paths from the gate electrodes 43 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second control terminals 53B are configured by the second control-side connecting member 32B, the second control layer 25, the second control layer connecting member 93B, the second control-side connecting portion 26d of the second control layer 26, and the second control terminal-side connecting member 35B. For this reason, the second control-side conductive paths, which are an example of the third conductive paths related to the plurality of second power semiconductor elements 40B on the first substrate 11, become longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in length of the second control-side conductive paths related to the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends of the plurality of second power semiconductor elements 40B in the arrangement direction, is greatest. In this case, the third end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Ba, has the shortest length, and the fourth end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bb, has the longest length.

[0248] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second detection terminal 54B is composed of the second drive-side connecting member 33B, the second drive layer 27, and the second detection terminal-side connecting member 36B. Therefore, the second drive-side conductive path, which is an example of the fourth conductive path for the plurality of second power semiconductor elements 40B on the first substrate 11, becomes longer in order from the second power semiconductor element 40Bb to the second power semiconductor element 40Ba. In other words, the difference in length of the second drive-side conductive path for the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction of the second power semiconductor elements 40B among the plurality of second power semiconductor elements 40B, is greatest. In this case, the third end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Ba, is the longest, and the fourth end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bb, is the shortest.

[0249] The second control side conductive paths from the gate electrodes 43 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second control terminals 53B are configured by the second control side connecting member 32B, the second control layer 26, and the second control terminal side connecting member 35B. For this reason, the second control side conductive paths, which are an example of third conductive paths for the plurality of second power semiconductor elements 40B on the second substrate 12, become longer in order from the second power semiconductor element 40Bd to the second power semiconductor element 40Bc. In other words, the difference in length of the second control side conductive paths for the second power semiconductor element 40Bc as the first end power semiconductor element and the second power semiconductor element 40Bd as the second end power semiconductor element, which are both ends in the arrangement direction of the second power semiconductor elements 40B among the plurality of second power semiconductor elements 40B, is greatest. In this case, the third end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bc, is the longest, and the fourth end control side conductive path, which is the second control side conductive path of the second power semiconductor element 40Bd, is the shortest.

[0250] The second drive-side conductive paths from the source electrodes 42 of the multiple second power semiconductor elements 40B on the second substrate 12 to the second detection terminals 54B are composed of the second drive-side connecting members 33B, the second drive layer 28, the second drive-layer connecting members 94B, the second drive-side connecting portions 27d of the second drive layer 27, and the second detection terminal connecting members 36B. Therefore, the second drive-side conductive paths, which are an example of fourth conductive paths related to the multiple second power semiconductor elements 40B on the second substrate 12, become longer in order from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in length between the second drive-side conductive paths related to the second power semiconductor element 40Bc as the first end power semiconductor element and the second power semiconductor element 40Bd as the second end power semiconductor element, which are both ends of the multiple second power semiconductor elements 40B in the arrangement direction of the second power semiconductor elements 40B, is greatest. In this case, the third end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bc, has the shortest length, and the fourth end driving side conductive path, which is the second driving side conductive path of the second power semiconductor element 40Bd, has the longest length.

[0251] As described above, in the present embodiment, second control-side detour portion 26b and second drive-side detour portion 27b are formed so as to reduce the variation in the total length of the second control-side conduction path and the second drive-side conduction path among the plurality of second power semiconductor elements 40B. That is, power module 1B of the present embodiment is configured such that second control-side detour portion 26b and second drive-side detour portion 27b cause the sum of the length of the second control-side conduction path, which is an example of a third conduction path, and the length of the second drive-side conduction path, which is an example of a fourth conduction path, to become close to each other among the plurality of second power semiconductor elements 40B.

[0252] In addition, in this embodiment, the first control side bypass portion 21b and the first drive side bypass portion 24b are each formed so as to reduce the variation between the total length of the third end control side conductive path and the third end drive side conductive path and the total length of the fourth end control side conductive path and the fourth end drive side conductive path.

[0253] The sum of the lengths of the third-end control-side conductive paths and the third-end drive-side conductive paths is an example of the "third sum" set forth in the claims. The sum of the lengths of the fourth-end control-side conductive paths and the fourth-end drive-side conductive paths is an example of the "fourth sum" set forth in the claims. Therefore, the power module 1B of this embodiment is configured such that the third sum approaches the fourth sum by the second control-side detour section 26b and the second drive-side detour section 27b.

[0254] (effect) According to the power module 1B of this embodiment, in addition to the same effects as those of the power module 1A of the first embodiment, the following effects can be obtained.

[0255] (2-1) The first control side coupling portion 21c of the first control layer 21 is made of a wire. Also, the first drive side coupling portion 24c of the first drive layer 24 is made of a wire. With this configuration, the first control side coupling portion 21c and the first drive side coupling portion 24c can be arranged over other wiring provided on the substrate 10, which increases the degree of freedom in the placement of the first control side coupling portion 21c and the first drive side coupling portion 24c. This makes it easier to design the layout of each of the first control layer 21 and the first drive layer 24.

[0256] [Power module application example] An example of a circuit configuration configured using the power modules 1A and 1B will be described below. For convenience, the body diode 44 is omitted in Figures 33 and 34.

[0257] As a first example of the above circuit configuration, Fig. 33 shows a three-phase AC inverter 200 configured using power modules 1A and 1B. In the three-phase AC inverter 200, a power module 1A configuring a U-phase inverter, a power module 1A configuring a V-phase inverter, and a power module 1A configuring a W-phase inverter are connected in parallel to one another. The three-phase AC inverter 200 is configured to use SiC MOSFETs as the power semiconductor elements 40, and to connect snubber capacitors C between the power supply terminals PL and the ground terminals NL. It is also possible to realize a three-phase AC inverter (not shown) by using IGBTs as the power semiconductor elements 40, and to connect snubber capacitors C between the power supply terminals PL and the ground terminals NL. In this case, the three-phase AC inverter 200 further includes a diode connected in anti-parallel to the IGBT.

[0258] As shown in Figure 33, when power modules 1A and 1B are connected to a power source E and a switching operation is performed, the switching speed of the SiC MOSFET is fast, and a large surge voltage Ldi / dt is generated due to the inductance L of the connection line. For example, if the current change di=300 A and the time change dt due to switching is dt=100 nsec, then di / dt=3×10 9 (A / s).

[0259] The value of surge voltage Ldi / dt changes depending on the value of inductance L, but this surge voltage Ldi / dt is superimposed on power supply E. This surge voltage Ldi / dt can be absorbed by snubber capacitor C connected between power supply terminal PL and ground terminal NL.

[0260] As a second example of the circuit configuration, FIG. 34 shows a three-phase AC inverter 210 configured using power modules 1A and 1B. The three-phase AC inverter 210 includes a power module unit 212 connected to a gate driver 211, a power supply or storage battery 213, and a converter 214, and controls the driving of a three-phase AC motor unit 215. The power module unit 212 is connected to a U-phase inverter, a V-phase inverter, and a W-phase inverter corresponding to the U-phase, V-phase, and W-phase of the three-phase AC motor unit 215.

[0261] The gate driver 211 is connected to the gate electrodes 43 of the first power semiconductor element group 40AT and the gate electrodes 43 of the second power semiconductor element group 40BT of the power module 1A constituting the U-phase inverter, the gate electrodes 43 of the first power semiconductor element group 40AT and the gate electrodes 43 of the second power semiconductor element group 40BT of the power module 1A constituting the V-phase inverter, and the gate electrodes 43 of the first power semiconductor element group 40AT and the gate electrodes 43 of the second power semiconductor element group 40BT of the power module 1A constituting the W-phase inverter. The gate driver 211 is also connected to the source electrodes 42 of the first power semiconductor element group 40AT and the source electrodes 42 of the second power semiconductor element group 40BT of the power module 1A constituting the U-phase inverter, the source electrodes 42 of the first power semiconductor element group 40AT and the source electrodes 42 of the second power semiconductor element group 40BT of the power module 1A constituting the V-phase inverter, and the source electrodes 42 of the first power semiconductor element group 40AT and the source electrodes 42 of the second power semiconductor element group 40BT of the power module 1A constituting the W-phase inverter.

[0262] The power module section 212 is connected between the positive terminal (+) P and the negative terminal (-) N of a converter 214 to which a power source or a storage battery (E) 213 is connected, and includes the power semiconductor element groups 40AT, 40BT of the power module 1A that constitutes the U-phase inverter, the power semiconductor element groups 40AT, 40BT of the power module 1A that constitutes the V-phase inverter, and the power semiconductor element groups 40AT, 40BT of the power module 1A that constitutes the W-phase inverter.

[0263] A freewheel diode 216 is connected in antiparallel between the source electrode 42 and the drain electrode 41 of each of the power semiconductor element groups 40AT, 40BT of each phase inverter.

[0264] [Example of change] The above-described embodiments are examples of possible forms of the power module according to the present disclosure and are not intended to limit the forms. The power module according to the present disclosure may take forms different from those exemplified in the above-described embodiments. Examples of such forms include forms in which part of the configuration of the above-described embodiments is replaced, modified, or omitted, or forms in which new configurations are added to the above-described embodiments. In the following modified examples, parts common to the above-described embodiments are designated by the same reference numerals as the above-described embodiments, and descriptions thereof will be omitted.

[0265] In the first embodiment, the first control layer 21 and the first drive layer 23 can be interchanged, and the first control layer 22 and the first drive layer 24 can be interchanged. In one example, as shown in Figure 35, on the first substrate 11, the first control layer 21 is arranged adjacent to the first mounting layer 13A in the vertical direction Y, and the first drive layer 23 is arranged on the opposite side of the first control layer 21 from the first mounting layer 13A.

[0266] The first control layer 21 extends in the lateral direction X. The shape of the first control layer 21 is the same as the shape of the first drive layer 23 of the first embodiment. The first control layer 21 is connected to a first control-side connecting member 32A that is connected to each of the first power semiconductor elements 40A of the first substrate 11.

[0267] The shape of the first drive layer 23 is the same as the shape of the first control layer 21 of the first embodiment. The first drive layer 23 has a first drive-side wiring portion 23a, a first drive-side detour portion 23b, a first drive-side coupling portion 23c, and a first drive-side connection portion 23d. The first drive layer 23 is a single member in which the first drive-side wiring portion 23a, the first drive-side detour portion 23b, the first drive-side coupling portion 23c, and the first drive-side connection portion 23d are integrally formed. In the vertical direction Y, the first drive-side detour portion 23b is disposed on the opposite side of the first control layer 21 with respect to the first drive-side wiring portion 23a. A first drive-side connection member 33A, which is connected to each first power semiconductor element 40A of the first substrate 11, is connected to the first drive-side wiring portion 23a of the first drive layer 23. 35, first drive-side connecting member 33A, which is connected to each first power semiconductor element 40A of first substrate 11, is not connected to first drive-side detour portion 23b. First detection terminal-side connecting member 36A and first drive-layer connecting member 94A are connected to first drive-side connecting portion 23d.

[0268] Furthermore, on the second substrate 12, the first control layer 22 is arranged adjacent to the first mounting layer 13B in the vertical direction Y, and the first drive layer 24 is arranged on the opposite side of the first control layer 22 from the first mounting layer 13B.

[0269] The shape of the first control layer 22 is the same as the shape of the first drive layer 24 of the first embodiment. The first control layer 22 has a first control-side wiring portion 22a, a first control-side detour portion 22b, a first control-side coupling portion 22c, and a first control-side connection portion 22d. The first control layer 22 is a single member in which the first control-side wiring portion 22a, the first control-side detour portion 22b, the first control-side coupling portion 22c, and the first control-side connection portion 22d are integrally formed. In the vertical direction Y, the first control-side detour portion 22b is disposed on the opposite side of the first drive layer 24 from the first control-side wiring portion 22a. The first control-side wiring portion 22a is connected to a first control-side connection member 32A, which is connected to each first power semiconductor element 40A of the second substrate 12. 35, the first control side connecting member 32A, which is connected to each first power semiconductor element 40A of the second substrate 12, is not connected to the first control side detour portion 22b. The first control side connecting portion 22d is connected to the first control terminal side connecting member 35A and the first control layer connecting member 93A. In a plan view, the first control layer connecting member 93A extends in the lateral direction X.

[0270] The shape of the first drive layer 24 is the same as the shape of the first control layer 22 of the first embodiment. The first drive layer 24 extends in the horizontal direction X. In the vertical direction Y, the first drive layer 24 is disposed between the first control side wiring portion 22a and the first control side detour portion 22b. A first drive layer connecting member 94A is connected to the end of the first drive layer 24 in the horizontal direction X that is on the side of the third substrate side surface 12c of the second substrate 12. In a plan view, the first drive layer connecting member 94A extends in the horizontal direction X.

[0271] 35, the arrangement positions of the first control terminal 53A and the first detection terminal 54A in the horizontal direction X may be reversed from those in the first embodiment, thereby preventing the first control terminal connecting member 35A and the first detection terminal connecting member 36A from intersecting in a plan view.

[0272] In the first embodiment, the second control layer 25 and the second drive layer 27 can be interchanged, and the second control layer 26 and the second drive layer 28 can be interchanged. In one example, as shown in Figure 36, on the first substrate 11, the second control layer 25 is arranged adjacent to the conductive layer 15A in the vertical direction Y, and the second drive layer 27 is arranged on the opposite side of the second control layer 25 from the conductive layer 15A.

[0273] The shape of the second control layer 25 is the same as the shape of the second drive layer 27 of the first embodiment. The second control layer 25 has a second control-side wiring portion 25a, a second control-side detour portion 25b, a second control-side coupling portion 25c, and a second control-side connection portion 25d. The second control layer 25 is a single member in which the second control-side wiring portion 25a, the second control-side detour portion 25b, the second control-side coupling portion 25c, and the second control-side connection portion 25d are integrally formed. In the vertical direction Y, the second control-side detour portion 25b is disposed on the opposite side of the second drive layer 27 from the second control-side wiring portion 25a. The second control-side wiring portion 25a is connected to a second control-side connection member 32B, which is connected to each second power semiconductor element 40B of the first substrate 11. 36, the second control side connecting member 32B connected to each second power semiconductor element 40B of the first substrate 11 is not connected to the second control side detour portion 25b. The second control side connecting portion 25d is connected to the second control terminal side connecting member 35B and the second control layer connecting member 93B.

[0274] The shape of the second drive layer 27 is the same as the shape of the second control layer 25 of the first embodiment. The second drive layer 27 extends in the horizontal direction X. In the vertical direction Y, the second drive layer 27 is disposed between the second control side wiring portion 25a and the second control side detour portion 25b of the second control layer 25. A second drive layer connecting member 94B is connected to the end of the second drive layer 27 in the horizontal direction X that is on the side of the fourth substrate side surface 11d of the first substrate 11.

[0275] Furthermore, on the second substrate 12, the second control layer 26 is disposed adjacent to the conductive layer 15B in the vertical direction Y, and the second drive layer 28 is disposed on the opposite side of the second control layer 26 from the conductive layer 15B.

[0276] The shape of the second drive layer 28 is the same as the shape of the second control layer 26 of the first embodiment. The second drive layer 28 has second drive-side wiring portions 28a, second drive-side detour portions 28b, second drive-side coupling portions 28c, and second drive-side connecting portions 28d. The second drive layer 28 is a single member in which the second drive-side wiring portions 28a, second drive-side detour portions 28b, second drive-side coupling portions 28c, and second drive-side connecting portions 28d are integrally formed. In the vertical direction Y, the second drive-side detour portions 28b are disposed on the opposite side of the second control layer 26 with respect to the second drive-side wiring portions 28a. The second drive-side connecting members 33B, which are connected to the second power semiconductor elements 40B of the second substrate 12, are connected to the second drive-side wiring portions 28a. 36, second drive-side connecting members 33B, which are connected to the second power semiconductor elements 40B of the second substrate 12, are not connected to second drive-side detour portion 28b. Second detection terminal-side connecting members 36B and second drive-layer connecting members 94B are connected to second drive-side connecting portion 28d. In a plan view, second drive-layer connecting members 94B extend in the lateral direction X.

[0277] The shape of the second control layer 26 is the same as the shape of the second drive layer 28 of the first embodiment. The second control layer 26 extends in the horizontal direction X. In the vertical direction Y, the second control layer 26 is disposed between the second drive-side wiring portion 28a and the second drive-side detour portion 28b. A second control layer connecting member 93B is connected to the end of the second drive layer 28 in the horizontal direction X that is on the side of the third substrate side surface 12c of the second substrate 12. In a plan view, the second control layer connecting member 93B extends in the horizontal direction X.

[0278] 36, the arrangement positions of the second control terminal 53B and the second detection terminal 54B in the horizontal direction X may be reversed from those in the first embodiment, thereby preventing the second control terminal side connecting member 35B and the second detection terminal side connecting member 36B from intersecting in a plan view.

[0279] In the second embodiment, the first control layer 21 and the first drive layer 23 can be interchanged, and the first control layer 22 and the first drive layer 24 can be interchanged. In one example, as shown in Figure 37, on the first substrate 11, the first control layer 21 is arranged adjacent to the first mounting layer 13A in the vertical direction Y, and the first driving layer 23 is arranged on the opposite side of the first control layer 21 from the first mounting layer 13A.

[0280] The first control layer 21 extends in the horizontal direction X. The shape of the first control layer 21 is the same as the shape of the first drive layer 23 of the second embodiment. The first control layer 21 is connected to a first control-side connecting member 32A that is connected to each of the first power semiconductor elements 40A of the first substrate 11.

[0281] The shape of the first drive layer 23 is the same as that of the first control layer 21 of the second embodiment. The first drive layer 23 has a first drive-side wiring portion 23a, a first drive-side detour portion 23b, and a first drive-side coupling portion 23c. The first drive-side wiring portion 23a, the first drive-side detour portion 23b, and the first drive-side coupling portion 23c are formed individually. The first drive-side wiring portion 23a and the first drive-side detour portion 23b are each made of, for example, copper foil. The first drive-side coupling portion 23c is, for example, a wire made by wire bonding. In the vertical direction Y, the first drive-side detour portion 23b is disposed on the opposite side of the first control layer 21 with respect to the first drive-side wiring portion 23a. A first drive-side connecting member 33A, which is connected to each first power semiconductor element 40A of the first substrate 11, is connected to the first drive-side wiring portion 23a of the first drive layer 23. 37, the first drive-side connecting member 33A connected to each first power semiconductor element 40A of the first substrate 11 is not connected to the first drive-side detour portion 23b. The first detection terminal-side connecting member 36A and the first drive-layer connecting member 94A are connected to the first drive-side connecting portion 23d.

[0282] Furthermore, on the second substrate 12, the first control layer 22 is arranged adjacent to the first mounting layer 13B in the vertical direction Y, and the first drive layer 24 is arranged on the opposite side of the first control layer 22 from the first mounting layer 13B.

[0283] The shape of the first control layer 22 is the same as that of the first drive layer 24 of the first embodiment. The first control layer 22 has a first control-side wiring portion 22a, a first control-side detour portion 22b, a first control-side coupling portion 22c, and a first control-side connection portion 22d. The first control-side wiring portion 22a, the first control-side detour portion 22b, the first control-side coupling portion 22c, and the first control-side connection portion 22d are formed individually, while the first control-side detour portion 22b and the first control-side connection portion 22d are formed integrally. The first control-side wiring portion 22a, the first control-side detour portion 22b, and the first control-side connection portion 22d are each made of, for example, copper foil. The first control-side coupling portion 22c is, for example, a wire made by wire bonding. In the vertical direction Y, the first control-side detour portion 22b is arranged on the opposite side of the first drive layer 24 from the first control-side wiring portion 22a. The first control side wiring portion 22a is connected to a first control side connecting member 32A which is connected to each first power semiconductor element 40A of the second substrate 12. As shown in Fig. 37, the first control side detour portion 22b is not connected to the first control side connecting member 32A which is connected to each first power semiconductor element 40A of the second substrate 12. The first control side connecting portion 22d is connected to a first control terminal side connecting member 35A and a first control layer connecting member 93A. In a plan view, the first control layer connecting member 93A extends in the lateral direction X.

[0284] The shape of the first drive layer 24 is the same as the shape of the first control layer 22 of the first embodiment. The first drive layer 24 extends in the horizontal direction X. In the vertical direction Y, the first drive layer 24 is disposed between the first control side wiring portion 22a and the first control side detour portion 22b. A first drive layer connecting member 94A is connected to the end of the first drive layer 24 in the horizontal direction X that is on the side of the third substrate side surface 12c of the second substrate 12.

[0285] 37, the arrangement positions of the first control terminal 53A and the first detection terminal 54A in the horizontal direction X may be reversed from those in the first embodiment, thereby preventing the first control terminal connecting member 35A and the first detection terminal connecting member 36A from intersecting in a plan view.

[0286] In the second embodiment, the second control layer 25 and the second drive layer 27 can be interchanged, and the second control layer 26 and the second drive layer 28 can be interchanged. In one example, as shown in Figure 38, on the first substrate 11, the second control layer 25 is arranged adjacent to the conductive layer 15A in the vertical direction Y, and the second drive layer 27 is arranged on the opposite side of the second control layer 25 from the conductive layer 15A.

[0287] The shape of the second control layer 25 is the same as the shape of the second drive layer 27 of the second embodiment. The second control layer 25 has a second control-side wiring portion 25a, a second control-side detour portion 25b, a second control-side coupling portion 25c, and a second control-side connection portion 25d. The second control-side wiring portion 25a, the second control-side detour portion 25b, and the second control-side coupling portion 25c are formed individually, while the second control-side detour portion 25b and the second control-side connection portion 25d are formed integrally. In the vertical direction Y, the second control-side detour portion 25b is disposed on the opposite side of the second drive layer 27 from the second control-side wiring portion 25a. The second control-side wiring portion 25a is connected to a second control-side connection member 32B, which is connected to each second power semiconductor element 40B of the first substrate 11. 38, the second control side detour portion 25b is not connected to the second control side connecting member 32B that is connected to each second power semiconductor element 40B of the first substrate 11. The second control side connecting portion 25d is connected to the second control terminal side connecting member 35B and the second control layer connecting member 93B.

[0288] The shape of the second drive layer 27 is the same as the shape of the second control layer 25 of the second embodiment. The second drive layer 27 extends in the horizontal direction X. In the vertical direction Y, the second drive layer 27 is disposed between the second control side wiring portion 25a and the second control side detour portion 25b in the second control layer 25. A second drive layer connecting member 94B is connected to the end of the second drive layer 27 in the horizontal direction X that is on the side of the fourth substrate side surface 11d of the first substrate 11.

[0289] Furthermore, on the second substrate 12, the second control layer 26 is disposed adjacent to the conductive layer 15B in the vertical direction Y, and the second drive layer 28 is disposed on the opposite side of the second control layer 26 from the conductive layer 15B.

[0290] The shape of the second drive layer 28 is the same as the shape of the second control layer 26 of the second embodiment. The second drive layer 28 has second drive-side wiring portions 28a, second drive-side detour portions 28b, and second drive-side coupling portions 28c. The second drive-side wiring portions 28a, second drive-side detour portions 28b, and second drive-side coupling portions 28c are formed individually. In the vertical direction Y, the second drive-side detour portions 28b are disposed on the opposite side of the second control layer 26 from the second drive-side wiring portions 28a. The second drive-side wiring portions 28a are connected to second drive-side connecting members 33B, which are connected to the second power semiconductor elements 40B of the second substrate 12. As shown in FIG. 38 , the second drive-side connecting members 33B, which are connected to the second power semiconductor elements 40B of the second substrate 12, are not connected to the second drive-side detour portions 28b. The second driving side connecting portion 28d is connected to the second detection terminal side connecting member 36B and the second driving layer connecting member 94B.

[0291] The shape of the second control layer 26 is the same as the shape of the second drive layer 28 of the second embodiment. The second control layer 26 extends in the horizontal direction X. In the vertical direction Y, the second control layer 26 is disposed between the second drive-side wiring portion 28a and the second drive-side detour portion 28b. A second control layer connecting member 93B is connected to the end of the second drive layer 28 in the horizontal direction X that is on the side of the third substrate side surface 12c of the second substrate 12. In a plan view, the second control layer connecting member 93B extends in the horizontal direction X.

[0292] 38, the arrangement positions of the second control terminal 53B and the second detection terminal 54B in the horizontal direction X may be reversed from those in the first embodiment, thereby preventing the second control terminal side connecting member 35B and the second detection terminal side connecting member 36B from intersecting in a plan view.

[0293] In the second embodiment, the first control layer 21 may have a first control-side connecting portion 21d as in the first embodiment. The first control-side connecting portion 21d is formed at the end of the first control-side detour portion 21b in the lateral direction X that is on the fourth substrate side surface 11d side of the first substrate 11. In this case, the length in the lateral direction X of the first control-side wiring portion 21a of the first control layer 21 is shortened. The first control-side connecting portion 21d allows the first control layer connecting member 93A to be formed so as to extend along the lateral direction X in a plan view.

[0294] In the second embodiment, the second control layer 26 may have a second control-side connecting portion 26d, as in the first embodiment. The second control-side connecting portion 26d is formed at the end of the second control-side detour portion 26b in the lateral direction X that is on the third substrate side surface 12c side of the second substrate 12. In this case, the length in the lateral direction X of the second control-side wiring portion 26a of the second control layer 26 is shortened. The second control-side connecting portion 26d allows the second control layer connecting member 93B to be formed so as to extend along the lateral direction X in a plan view.

[0295] In the second embodiment, the first control side coupling portion 21c of the first control layer 21 may be formed of a strip-shaped thin plate instead of a wire. The strip-shaped thin plate may be made of Cu or a Cu alloy, or Al or an Al alloy.

[0296] In the second embodiment, the first drive side coupling portion 24c of the first drive layer 24 may be formed of a strip-shaped thin plate instead of a wire. The strip-shaped thin plate may be made of Cu or a Cu alloy, or Al or an Al alloy.

[0297] In the second embodiment, the second control side coupling portion 26c of the second control layer 26 may be formed of a strip-shaped thin plate instead of a wire. The strip-shaped thin plate may be made of Cu or a Cu alloy, or Al or an Al alloy.

[0298] In the second embodiment, the second drive side coupling portion 27c of the second drive layer 27 may be formed of a strip-shaped thin plate instead of a wire. The strip-shaped thin plate may be made of Cu or a Cu alloy, or Al or an Al alloy.

[0299] In each of the above embodiments, at least one of the first element connection member 31A and the second element connection member 31B may be configured with one or more wires. In each of the above embodiments, at least one of the connecting members 90A to 90C may be made up of one or more wires.

[0300] In each of the above embodiments, the configuration of the power semiconductor element 40 (40A, 40B) can be modified as desired. For example, as shown in FIG. 39 , a source electrode 42 and a gate electrode 43 are formed on the element main surface 40s of the first power semiconductor element 40A. The source electrode 42 is formed over most of the element main surface 40s. In this embodiment, the source electrode 42 includes a first source electrode 42D and a second source electrode 42E. In a plan view, the first source electrode 42D and the second source electrode 42E are spaced apart in the lateral direction X. In a plan view, the gate electrode 43 is disposed in a recess 42x formed in the source electrode 42. In FIG. 39 , the first driving-side connecting member 33A is connected to the second source electrode 42E. Note that the first driving-side connecting member 33A may also be connected to the first source electrode 42D. The second power semiconductor element 40B can also be modified as shown in FIG. 39 .

[0301] In each of the above embodiments, either the first output terminal 52A or the second output terminal 52B may be omitted. In each of the above embodiments, the substrate 10 may be configured such that the first substrate 11 and the second substrate 12 are integrally formed. In this case, the coupling members 90A to 90C are omitted. The first control layer 21 and the first control layer 22 may be integrated. In this case, the first control layer connecting member 93A is omitted. The first drive layer 23 and the first drive layer 24 may be integrated. In this case, the first drive layer connecting member 94A is omitted. The second control layer 25 and the second control layer 26 may be integrated. In this case, the second control layer connecting member 93B is omitted. The second drive layer 27 and the second drive layer 28 may be integrated. In this case, the second drive layer connecting member 94B is omitted.

[0302] In each of the above embodiments, either the first substrate 11 or the second substrate 12 may be omitted from the substrate 10. When the second substrate 12 is omitted from the substrate 10, the first mounting layer 13B, the second mounting layer 14B, the conductive layer 15B, the first control layer 22, the first driving layer 24, the second control layer 26, the second driving layer 28, and the power semiconductor elements 40A, 40B of the second substrate 12 are mainly omitted. Furthermore, when the first substrate 11 is omitted from the substrate 10, the first mounting layer 13A, the second mounting layer 14A, the conductive layer 15A, the first control layer 21, the first driving layer 23, the second control layer 25, the second driving layer 27, and the power semiconductor elements 40A, 40B of the first substrate 11 are mainly omitted.

[0303] In each of the above embodiments, the power supply current terminal 55 may be omitted. In this case, the power supply current detection side connecting member 34 is omitted. In each of the above embodiments, the thermistor 17 may be omitted. In addition, the thermistor mounting layer 16, the pair of temperature detection terminals 56, and the pair of thermistor-side connecting members 37 may be omitted.

[0304] In each of the above embodiments, the power module may include a substrate, a mounting layer, a conductive layer, a control layer, and a drive layer arranged on a main surface of the substrate, a plurality of power semiconductor elements arranged on the mounting layer, and a control terminal and a detection terminal. In this case, a detour portion is formed in at least one of the control layer and the drive layer so that the total lengths of the control-side conductive paths and the drive-side conductive paths in the plurality of power semiconductor elements are close to each other.

[0305] (Addendum) Next, the technical concepts that can be understood from the above-described embodiments and modifications will be described. (Appendix 1) a substrate having a substrate main surface and a substrate back surface facing opposite sides in a thickness direction and having electrical insulation properties; a mounting layer, a control layer, and a drive layer, each of which is formed on the main surface of the substrate and has electrical conductivity; a power semiconductor element mounted on the mounting layer, the power semiconductor element having a back surface on which a first drive electrode electrically connected to the mounting layer is formed, and a main surface on which a second drive electrode and a control electrode are formed; a control-side connecting member that connects the control electrode and the control layer; a drive-side connecting member that connects the second drive electrode and the drive layer; a control terminal electrically connected to the control layer; a detection terminal electrically connected to the driving layer, the power semiconductor element is one of a plurality of power semiconductor elements provided on the mounting layer in a state of being arranged in one direction as viewed from the thickness direction, the control-side connection member is one of a plurality of control-side connection members each corresponding to one of the plurality of power semiconductor elements, the driving-side connection member is one of a plurality of driving-side connection members each corresponding to one of the plurality of power semiconductor elements, a path between the control electrode and the control terminal is a first conductive path, and a path between the second drive electrode and the detection terminal is a second conductive path; At least one of the control layer and the drive layer has a detour portion that detours so that the sum of the length of the first conductive path and the length of the second conductive path approaches each other between the plurality of power semiconductor elements. Power module.

[0306] (Appendix 2) a substrate having a substrate main surface and a substrate back surface facing opposite sides in a thickness direction and having electrical insulation properties; a mounting layer, a control layer, and a drive layer, each of which is formed on the main surface of the substrate and has electrical conductivity; a plurality of power semiconductor elements mounted on the mounting layer, the power semiconductor elements having a back surface on which a first drive electrode electrically connected to the mounting layer is formed, and a main surface on which a second drive electrode and a control electrode are formed, the power semiconductor elements being arranged in one direction as viewed in the thickness direction; a plurality of control-side connection members that connect the control electrodes and the control layers of the plurality of power semiconductor elements and are arranged in the same direction as the arrangement direction of the plurality of power semiconductor elements; a plurality of drive-side connection members that connect the second drive electrodes of the plurality of power semiconductor elements to the drive layers and are arranged in the same direction as the arrangement direction of the plurality of power semiconductor elements; a control terminal electrically connected to the control layer; a detection terminal electrically connected to the driving layer, the plurality of power semiconductor elements include a first end power semiconductor element and a second end power semiconductor element located at both ends in the arrangement direction, a path between the control electrode and the control terminal of the first-end power semiconductor element is defined as a first control-side conductive path, a path between the second drive electrode and the detection terminal of the first-end power semiconductor element is defined as a first drive-side conductive path, and a sum of a length of the first control-side conductive path and a length of the first drive-side conductive path is defined as a first sum; A path between the control electrode and the control terminal of the second-end power semiconductor element is defined as a second control-side conductive path, a path between the second drive electrode and the detection terminal of the second-end power semiconductor element is defined as a second drive-side conductive path, and the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path is defined as a second sum. At least one of the control layer and the drive layer has a detour portion that detours the conductive path so that the first sum and the second sum approach each other. Power module.

[0307] (Appendix 3) When the one direction is defined as a first direction and the direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, the control layer and the drive layer each have a wiring portion extending in the first direction, The detour portion is disposed apart from the wiring portion in the second direction and extends in the first direction. 3. The power module according to claim 1 or 2.

[0308] (Appendix 4) At least one of the control layer and the drive layer has a connecting portion that connects the detour portion and the wiring portion, The wiring portion, the detour portion, and the connecting portion are formed as a single, integral member. 2. A power module as described in Appendix 3.

[0309] (Appendix 5) At least one of the control layer and the drive layer has a connecting portion that connects the detour portion and the wiring portion, The connecting portion is made of a wire. 2. A power module as described in Appendix 3.

[0310] (Appendix 6) The drive layer is disposed closer to the mounting layer than the control layer. 6. The power module according to any one of appendices 1 to 5.

[0311] (Appendix 7) the control layer has the detour portion, The detour portion is disposed on the opposite side of the wiring portion of the control layer from the drive layer. 6. A power module as defined in claim 6.

[0312] (Appendix 8) the driving layer has the detour portion, The detour portion is disposed on the opposite side of the control layer from the mounting layer. 6. A power module as defined in claim 6.

[0313] (Appendix 9) The control side connecting member and the drive side connecting member are not connected to the detour portion. 9. The power module according to any one of appendices 1 to 8.

[0314] (Appendix 10) When the one direction is defined as a first direction and the direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, When viewed from the thickness direction, at least one of the control side connecting member and the drive side connecting member extends in the second direction. 10. The power module according to any one of appendices 1 to 9.

[0315] (Appendix 11) the control terminal and the control layer are electrically connected by a control terminal side connecting member, The detection terminal and the driving layer are electrically connected by a detection terminal side connecting member. 11. The power module according to any one of claims 1 to 10.

[0316] (Appendix 12) The control layer has the detour portion and a first connection portion formed at a tip end of the detour portion and to which the control terminal side connection member is connected. 12. The power module of claim 11.

[0317] (Appendix 13) The driving layer has the detour portion and a second connection portion formed at a tip end of the detour portion and to which the detection terminal side connection member is connected. 13. The power module according to claim 11 or 12.

[0318] (Appendix 14) the substrate includes a first substrate and a second substrate; the mounting layer, the control layer, and the drive layer are disposed on the main surfaces of the first substrate and the second substrate, respectively; the plurality of power semiconductor elements are arranged in the one direction on the mounting layer of the first substrate and the mounting layer of the second substrate, respectively; the first substrate and the second substrate are arranged spaced apart from each other in the one direction, the mounting layer of the first substrate and the mounting layer of the second substrate are electrically connected by a mounting layer connecting member, the control layer of the first substrate and the control layer of the second substrate are electrically connected by a control layer connecting member, the drive layer of the first substrate and the drive layer of the second substrate are electrically connected by a drive layer connecting member, one of the control layer and the drive layer of the first substrate has the detour portion; The other of the control layer and the drive layer of the second substrate has the detour portion. 14. The power module according to any one of claims 1 to 13.

[0319] (Appendix 15) When the one direction is defined as a first direction and the direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, When viewed from the second direction, the control terminal and the detection terminal are each arranged to overlap the second substrate. 15. The power module of claim 14.

[0320] (Appendix 16) the power semiconductor element is a SiC MOSFET, The first drive electrode is a drain electrode, the second drive electrode is a source electrode, and the control electrode is a gate electrode. 16. The power module according to any one of appendices 1 to 15.

[0321] (Appendix 17) a substrate having a substrate main surface and a substrate back surface facing opposite sides in a thickness direction and having electrical insulation properties; a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each of which has conductivity and is formed on the main surface of the substrate; a first power semiconductor element mounted on the first mounting layer, the first power semiconductor element having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed; a second power semiconductor element mounted on the second mounting layer, the second power semiconductor element having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, and a second element main surface on which a second drive electrode electrically connected to the second input terminal and a control electrode are formed; a first control side connecting member that connects a control electrode of the first power semiconductor element and the first control layer; a first drive-side connecting member that connects a second drive electrode of the first power semiconductor element and the first drive layer; a second control side connecting member that connects a control electrode of the second power semiconductor element and the second control layer; a second drive-side connecting member that connects a second drive electrode of the second power semiconductor element and the second drive layer; a first control terminal electrically connected to the first control layer; a second control terminal electrically connected to the second control layer; a first detection terminal electrically connected to the first driving layer; a second detection terminal electrically connected to the second driving layer, the first power semiconductor element is one of a plurality of first power semiconductor elements provided on the first mounting layer in a state of being arranged in one direction as viewed from the thickness direction, the first control side connection member is one of a plurality of first control side connection members each corresponding to one of the plurality of first power semiconductor elements, the first driving-side connecting member is one of a plurality of first driving-side connecting members, each of which corresponds to one of the plurality of first power semiconductor elements; a path between a control electrode of the first power semiconductor element and the first control terminal is a first conductive path, and a path between a second drive electrode of the first power semiconductor element and the first detection terminal is a second conductive path; At least one of the first control layer and the first drive layer has a first detour portion that detours so that the sum of the length of the first conductive path and the length of the second conductive path approaches each other between the plurality of first power semiconductor elements. Power module.

[0322] (Appendix 18) a substrate having a substrate main surface and a substrate back surface facing opposite to each other in a thickness direction and having electrical insulation properties; a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each of which has conductivity and is formed on the main surface of the substrate; a plurality of first power semiconductor elements mounted on the first mounting layer, the first power semiconductor elements having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed, the first power semiconductor elements being arranged in one direction as viewed from the thickness direction; a plurality of second power semiconductor elements mounted on the second mounting layer in an arrayed state in the one direction, the second power semiconductor elements having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, a second element main surface on which a second drive electrode electrically connected to the second input terminal and a control electrode are formed; a plurality of first control side connection members that connect the control electrodes of the plurality of first power semiconductor elements to the first control layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of first drive-side connection members that connect second drive electrodes of the plurality of first power semiconductor elements to the first drive layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of second control side connection members that connect the control electrodes of the plurality of second power semiconductor elements and the second control layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements; a plurality of second drive side connection members that connect second drive electrodes of the second power semiconductor elements to the second drive layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements; a first control terminal electrically connected to the first control layer; a second control terminal electrically connected to the second control layer; a first detection terminal electrically connected to the first driving layer; a second detection terminal electrically connected to the second driving layer, the plurality of first power semiconductor elements include a first end power semiconductor element and a second end power semiconductor element located at both ends in an arrangement direction of the plurality of first power semiconductor elements, a path between the control electrode and the first control terminal of the first-end power semiconductor element is defined as a first-end control-side conductive path, a path between the second drive electrode and the first detection terminal of the first-end power semiconductor element is defined as a first-end drive-side conductive path, and a sum of a length of the first-end control-side conductive path and a length of the first-end drive-side conductive path is defined as a first sum; A path between the control electrode and the first control terminal of the second-end power semiconductor element is defined as a second-end control-side conductive path, a path between the second drive electrode and the first detection terminal of the second-end power semiconductor element is defined as a second-end drive-side conductive path, and the sum of the length of the second-end control-side conductive path and the length of the second-end drive-side conductive path is defined as a second sum. At least one of the first control layer and the first drive layer has a first detour portion that detours the conductive path so that the first sum and the second sum approach each other. Power module.

[0323] According to Supplementary Note 18, the voltage between the first control terminal and the first detection terminal is applied as a control voltage to the control electrode of the first power semiconductor element, and therefore the timing of application of the control voltage to the control electrode of the first power semiconductor element is determined according to the sum of the inductance value between the control electrode of the first power semiconductor element and the first control terminal and the inductance value between the second drive electrode of the first power semiconductor element and the first detection terminal. The inductance value between the control electrode of the first power semiconductor element and the first control terminal is mainly determined by the length of the conductive path between the control electrode of the first power semiconductor element and the first control terminal, and the inductance value between the second drive electrode of the first power semiconductor element and the first detection terminal is mainly determined by the length of the conductive path between the second drive electrode of the first power semiconductor element and the first detection terminal. Therefore, by suppressing the variation among the multiple first power semiconductor elements in the sum of the length of the conductive path between the control electrode of the first power semiconductor element and the first control terminal and the length of the conductive path between the second drive electrode of the first power semiconductor element and the first detection terminal, it is possible to suppress the variation in the total inductance value among the multiple first power semiconductor elements.

[0324] In addition, it is considered that the length of the conductive path between the first control electrode and the first control terminal and the variation in the conductive path between the second drive electrode and the first detection terminal are maximum between the first power semiconductor elements at both ends i...

Claims

1. a substrate having a substrate main surface and a substrate back surface facing opposite to each other in a thickness direction and having electrical insulation properties; a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each of which has conductivity and is formed on the main surface of the substrate; a first power semiconductor element mounted on the first mounting layer, the first power semiconductor element having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed; a second power semiconductor element mounted on the second mounting layer, the second power semiconductor element having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, and a second element main surface on which a second drive electrode electrically connected to the second input terminal and a control electrode are formed; a first control-side connecting member that connects a control electrode of the first power semiconductor element and the first control layer; a first drive-side connecting member that connects a second drive electrode of the first power semiconductor element and the first drive layer; a second control-side connecting member that connects a control electrode of the second power semiconductor element and the second control layer; a second drive-side connecting member that connects a second drive electrode of the second power semiconductor element and the second drive layer; a first control terminal electrically connected to the first control layer; a second control terminal electrically connected to the second control layer; a first detection terminal electrically connected to the first driving layer; a second detection terminal electrically connected to the second driving layer, a plurality of the second power semiconductor elements are provided on the second mounting layer in a state of being arranged in one direction as viewed from the thickness direction, a plurality of the second control-side connecting members and a plurality of the second drive-side connecting members are provided corresponding to the plurality of second power semiconductor elements, a path between the control electrode of the second power semiconductor element and the second control terminal is a third conductive path, and a path between the second drive electrode of the second power semiconductor element and the second detection terminal is a fourth conductive path; At least one of the second control layer and the second drive layer has a second detour portion that detours so that a sum of a length of the third conductive path and a length of the fourth conductive path approaches each other between the plurality of second power semiconductor elements. Power module.

2. a substrate having a substrate main surface and a substrate back surface facing opposite to each other in a thickness direction and having electrical insulation properties; a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each of which has conductivity and is formed on the main surface of the substrate; a plurality of first power semiconductor elements mounted on the first mounting layer, the first power semiconductor elements having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed, the first power semiconductor elements being arranged in one direction as viewed from the thickness direction; a plurality of second power semiconductor elements mounted on the second mounting layer in a state arranged in the one direction, the second power semiconductor elements having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, a second drive electrode electrically connected to the second input terminal, and a second element main surface on which a control electrode is formed; a plurality of first control side connection members that connect the control electrodes of the plurality of first power semiconductor elements to the first control layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of first drive-side connecting members that connect second drive electrodes of the plurality of first power semiconductor elements to the first drive layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of second control side connection members that connect the control electrodes of the plurality of second power semiconductor elements and the second control layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements; a plurality of second drive side connection members that connect second drive electrodes of the second power semiconductor elements to the second drive layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements; a first control terminal electrically connected to the first control layer; a second control terminal electrically connected to the second control layer; a first detection terminal electrically connected to the first driving layer; a second detection terminal electrically connected to the second driving layer, the plurality of second power semiconductor elements include a first end power semiconductor element and a second end power semiconductor element located at both ends in an arrangement direction of the plurality of second power semiconductor elements, a path between the control electrode and the second control terminal of the first-end power semiconductor element is defined as a third-end control-side conductive path, a path between the second drive electrode and the second detection terminal of the first-end power semiconductor element is defined as a third-end drive-side conductive path, and a sum of a length of the third-end control-side conductive path and a length of the third-end drive-side conductive path is defined as a third sum; A path between the control electrode and the second control terminal of the second-end power semiconductor element is defined as a fourth-end control-side conductive path, a path between the second drive electrode and the second detection terminal of the second-end power semiconductor element is defined as a fourth-end drive-side conductive path, and the sum of the length of the fourth-end control-side conductive path and the length of the fourth-end drive-side conductive path is defined as a fourth sum. At least one of the second control layer and the second drive layer has a second detour portion that detours the conductive path so that the third sum and the fourth sum approach each other. Power module.

3. When the one direction is defined as a first direction and a direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, the second control layer and the second drive layer each have a second wiring portion extending in the first direction, the second detour portion is disposed apart from the second wiring portion in the second direction and extends in the first direction; 3. The power module according to claim 1 or 2.

4. At least one of the second control layer and the second drive layer has a second coupling portion that couples the second detour portion and the second wiring portion, the second wiring portion, the second detour portion, and the second connecting portion are formed as a single integral member; The power module according to claim 3 .

5. At least one of the second control layer and the second drive layer has a second coupling portion that couples the second detour portion and the second wiring portion, The second connecting portion is made of a wire. The power module according to claim 3 .

6. When viewed from the thickness direction, the arrangement direction of the plurality of second power semiconductor elements is defined as a first direction, and a direction intersecting the first direction is defined as a second direction. the second driving layer is disposed adjacent to the conductive layer in the second direction, the second control layer is disposed on the opposite side of the second drive layer from the conductive layer. The power module according to any one of claims 1 to 5.

7. the second control layer has the second detour portion, the second detour portion is disposed on the opposite side of the second wiring portion of the second control layer from the second drive layer in the second direction. The power module according to claim 6.

8. the second driving layer has the second detour portion, the second detour portion is disposed on the opposite side of the second control layer from the conductive layer in the second direction. The power module according to claim 7.

9. the second control-side connecting member and the second drive-side connecting member are not connected to the second detour portion; The power module according to any one of claims 1 to 8.

10. the second control terminal and the second control layer are electrically connected by a second control terminal side connecting member, the second detection terminal and the second driving layer are electrically connected by a second detection terminal side connecting member; The power module according to any one of claims 1 to 9.

11. the second control layer has the second detour portion and a third connection portion formed at a tip end of the second detour portion and connected to the second control terminal side connection member; The power module according to claim 10.

12. the second driving layer has the second detour portion and a fourth connection portion formed at a tip end of the second detour portion and connected to the second detection terminal side connection member; The power module according to claim 11.

13. The substrate includes a first substrate and a second substrate, the first control layer, the second control layer, the first drive layer, the second drive layer, the first mounting layer, the second mounting layer, and the conductive layer are arranged on the substrate main surfaces of the first substrate and the second substrate, respectively; the first power semiconductor elements are arranged on the first mounting layer of the first substrate and the first mounting layer of the second substrate, respectively, to be spaced apart from each other in the one direction; the second mounting layer of the first substrate and the second mounting layer of the second substrate each have the plurality of second power semiconductor elements arranged spaced apart from one another in the one direction; the first substrate and the second substrate are arranged spaced apart from each other in the one direction, the second mounting layer of the first substrate and the second mounting layer of the second substrate are electrically connected to each other in the one direction by a second mounting layer connecting member, the second control layer of the first substrate and the second control layer of the second substrate are electrically connected by a second control layer connecting member, the second driving layer of the first substrate and the second driving layer of the second substrate are electrically connected by a second driving layer connecting member, one of the second control layer and the second drive layer of the first substrate has the second detour portion; the other of the second control layer and the second drive layer of the second substrate has the second detour portion; The power module according to any one of claims 1 to 12.

14. the second control terminal and the second detection terminal are each arranged to overlap the first substrate in a direction intersecting the one direction when viewed from the thickness direction. The power module according to claim 13.

15. The second power semiconductor element is made of a SiC MOSFET. The power module according to any one of claims 1 to 14.

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