Light-emitting device and method for manufacturing light-emitting device

Abstract

To provide a light-emitting device and a method for manufacturing the light-emitting device that reduce corrosion of wiring.SOLUTION: A light-emitting device according to one embodiment of the present disclosure comprises: a substrate including a base material and a Cu wiring disposed on an upper surface side of the base material; an insulating layer disposed on the substrate and having an opening located on at least a part of an upper surface of the Cu wiring; a Ti layer covering at least the upper surface of the Cu wiring; a TiN layer disposed on the Ti layer; a TiW layer disposed on the TiN layer; a metal layer disposed on the TiW layer and containing at least one of Au, Pt, Ru, Pd, and Rh; a conductive member disposed on the metal layer and containing Au; and a light-emitting element disposed on the conductive member and including an electrode.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a light emitting device and a method for manufacturing a light emitting device. [Background technology]

[0002] Patent document 1 discloses a semiconductor device including a semiconductor substrate, a metal pad formed on an electrode of the semiconductor substrate, a barrier metal layer stacked on the metal pad, and a bump formed on the barrier metal layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-150440 Summary of the Invention [Problem to be solved by the invention]

[0004] After forming a bump using plating, when a part of the barrier metal layer is etched using the bump as a mask, if the amount of side etching of the barrier metal layer is large, a space is formed that connects the outside world with wiring such as a metal pad, increasing the possibility of contact between the wiring and corrosive substances.

[0005] The present disclosure aims to provide a light-emitting device that reduces corrosion of wiring and a method for manufacturing the light-emitting device. [Means for solving the problem]

[0006] A light-emitting device according to one embodiment of the present disclosure includes a substrate having a base material and Cu wiring arranged on the upper surface of the base material, an insulating layer arranged on the substrate and having an opening located above at least a portion of the upper surface of the Cu wiring, a Ti layer covering at least the upper surface of the Cu wiring, a TiN layer arranged on the Ti layer, a TiW layer arranged on the TiN layer, a metal layer arranged on the TiW layer and containing at least one of Au, Pt, Ru, Pd, and Rh, a conductive member arranged on the metal layer and containing Au, and a light-emitting element having an electrode arranged on the conductive member.

[0007] A light-emitting device according to one embodiment of the present disclosure includes a substrate including a base material and Cu wiring disposed on an upper surface of the base material; an insulating layer disposed on the substrate and having an opening located above at least a portion of the upper surface of the Cu wiring; a TiW layer covering the upper surface of the Cu wiring, the inner surface of the insulating layer that defines the opening, and a portion of the upper surface of the insulating layer that is continuous with the inner surface; a first Ti layer covering the upper surface of the TiW layer and covering an outer surface of the TiW layer that is between the upper surface of the TiW layer and the upper surface of the insulating layer; a metal layer disposed on the first Ti layer and containing at least one of Au, Pt, Ru, Pd, and Rh; a conductive member disposed on the metal layer and containing Au; and a light-emitting element including an electrode disposed on the conductive member.

[0008] A light-emitting device according to one embodiment of the present disclosure comprises: a substrate including a base material and Cu wiring arranged on an upper surface of the base material; an insulating layer arranged on the substrate and having an opening located above at least a portion of the upper surface of the Cu wiring; a base layer covering the upper surface of the Cu wiring, an inner surface of the insulating layer that defines the opening, and a portion of the upper surface of the insulating layer that is connected to the inner surface; a metal layer arranged on the base layer and containing at least one of Au, Pt, Ru, Pd, and Rh; a conductive member arranged on the metal layer and containing Au; and a light-emitting element having an electrode arranged on the conductive member; wherein the portion of the base layer that covers the portion of the upper surface of the insulating layer comprises an outer surface that defines the outer edge of the base layer; and a recess that is recessed from at least a portion of the outer surface toward the center of the base layer when viewed from above.

[0009] a step of forming a Ti layer on the Ti layer to cover the upper surface of the Cu wiring; a step of forming a TiN layer on the Ti layer; a step of forming a TiW layer on the TiN layer; a step of forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on the TiW layer; a step of forming a resist layer on at least a portion of the insulating layer; a step of disposing a light-emitting element on the resist layer at a position spaced apart from the metal layer; a step of forming a conductive member containing Au on the metal layer by plating and bonding the conductive member to an electrode of the light-emitting element; a step of removing the resist layer; and a step of etching at least a portion of the TiW layer that does not overlap with the conductive member in a top view.

[0010] A method for manufacturing a light emitting device according to an embodiment of the present disclosure includes the steps of: preparing a substrate including a base material and a Cu wiring disposed on an upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of an upper surface of the Cu wiring; forming a first TiW layer and a second TiW layer, the first TiW layer covering the upper surface of the Cu wiring, an inner surface of the insulating layer defining the opening, and a portion of the upper surface of the insulating layer connected to the inner surface, and forming the second TiW layer on the upper surface of the insulating layer at a position spaced apart from the first TiW layer; forming a first Ti layer to cover the upper surface of the first TiW layer and the outer surface of the first TiW layer between the upper surface of the first TiW layer and the upper surface of the insulating layer; forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on the first Ti layer; forming a resist layer on at least a portion of the insulating layer; placing a light-emitting element on the resist layer at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; and etching the second TiW layer.

[0011] A method for manufacturing a light emitting device according to an embodiment of the present disclosure includes the steps of: preparing a substrate including a base material and a Cu wiring disposed on an upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of the upper surface of the Cu wiring; and forming a first underlayer and a second underlayer, the first underlayer covering the upper surface of the Cu wiring, an inner surface of the insulating layer defining the opening, and a portion of the upper surface of the insulating layer that is continuous with the inner surface, and forming a first underlayer on the upper surface of the insulating layer that is spaced apart from the first underlayer. forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on at least the first base layer; forming a resist layer on at least a portion of the insulating layer; arranging a light-emitting element on the resist layer at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; and etching the second base layer. [Effects of the Invention]

[0012] According to an embodiment of the present disclosure, it is possible to provide a light emitting device and a method for manufacturing a light emitting device that reduce corrosion of wiring. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a perspective view schematically showing a light emitting device according to a first embodiment. [Figure 2] 2 is an enlarged top view schematically showing a region II shown in FIG. 1 in the light emitting device according to the first embodiment. FIG. [Figure 3] 3 is a schematic enlarged top view illustrating an example of the configuration within a unit region III shown in FIG. 2 in the light emitting device according to the first embodiment. FIG. [Figure 4] 4 is a cross-sectional view schematically showing a cross section taken along line IV-IV shown in FIG. 3 in the light-emitting device according to the first embodiment. FIG. [Figure 5A]FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 5B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 6A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 6B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 7A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 7B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 8A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 8B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 9A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 9B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 10A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 10B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 11A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 11B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 12A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 12B]5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 13A] FIG. 2 is a schematic top view for explaining an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 13B] 5A to 5C are schematic cross-sectional views illustrating an example of a method for manufacturing the light emitting device according to the first embodiment. [Figure 14] 10 is a schematic enlarged top view illustrating an example of the configuration within a unit region III in a light emitting device according to a second embodiment. FIG. [Figure 15] 15 is a cross-sectional view schematically showing a cross section taken along line XV-XV shown in FIG. 14 in the light-emitting device according to the second embodiment. FIG. [Figure 16] 16 is a cross-sectional view schematically showing a cross section taken along line XVI-XVI shown in FIG. 14 in the light-emitting device according to the second embodiment. FIG. [Figure 17A] FIG. 10 is a schematic top view for explaining an example of a method for manufacturing a light emitting device according to a second embodiment. [Figure 17B] 10A to 10C are schematic cross-sectional views illustrating an example of a method for manufacturing a light emitting device according to a second embodiment. [Figure 18A] FIG. 10 is a schematic top view for explaining an example of a method for manufacturing a light emitting device according to a second embodiment. [Figure 18B] 10A to 10C are schematic cross-sectional views illustrating an example of a method for manufacturing a light emitting device according to a second embodiment. [Figure 19A] FIG. 10 is a schematic top view for explaining an example of a method for manufacturing a light emitting device according to a second embodiment. [Figure 19B] 10A to 10C are schematic cross-sectional views illustrating an example of a method for manufacturing a light emitting device according to a second embodiment. [Figure 19C] 10A to 10C are schematic cross-sectional views illustrating an example of a method for manufacturing a light emitting device according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, a light-emitting device and a method for manufacturing a light-emitting device according to an embodiment of the present disclosure will be described in detail with reference to the drawings. However, the following embodiments are intended to exemplify the light-emitting device and the method for manufacturing a light-emitting device to embody the technical concepts of the embodiments, and are not limited thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative positions, etc. of the components described in the embodiments are not intended to limit the scope of the present disclosure, but are merely illustrative examples. Note that the size, positional relationship, etc. of components shown in each drawing may be exaggerated for clarity. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed descriptions will be omitted as appropriate. An end view showing only the cut surface may be used as a cross-sectional view.

[0015] In the figures shown below, directions may be indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are perpendicular to each other. The direction of an arrow along the X-axis is referred to as the +X direction or +X side, and the direction opposite to the +X direction is referred to as the -X direction or -X side. The direction of an arrow along the Y-axis is referred to as the +Y direction or +Y side, and the direction opposite to the +Y direction is referred to as the -Y direction or -Y side. The direction of an arrow along the Z-axis is referred to as the +Z direction or +Z side, and the direction opposite to the +Z direction is referred to as the -Z direction or -Z side. Furthermore, the term "top view" used in the embodiments refers to viewing an object from the +Z direction. However, this does not limit the orientation of the light-emitting device during use, and the orientation of the light-emitting device is arbitrary. Furthermore, in the embodiments, the surface of an object viewed from the +Z direction is referred to as the "top surface," and the surface of an object viewed from the -Z direction is referred to as the "bottom surface." In the following embodiments, "along the X-axis, Y-axis, and Z-axis" includes an object having a tilt within a range of ±10° relative to these axes. Also, in the embodiments, "orthogonal" may include an error within ±10° relative to 90°.

[0016] Furthermore, in this disclosure, unless otherwise specified, polygons such as rectangles are referred to as polygons, including shapes in which the corners of the polygon have been processed, such as rounded, chamfered, corner-cut, or rounded. Shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle portions of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while retaining the polygon as a base are included in the interpretation of "polygon" described in this disclosure.

[0017] The same applies to terms that represent specific shapes, such as trapezoids, circles, and irregularities, as well as polygons. The same also applies to terms that refer to the sides that form the shape. In other words, even if the corners or middle part of a side are processed, the interpretation of "side" includes the processed parts.

[0018] Furthermore, "cover" or "enclose" is not limited to direct contact, but also includes indirect covering, for example, via another member. Furthermore, "place" is not limited to direct contact, but also includes indirect placement, for example, via another member.

[0019] [First embodiment] An example of the configuration of the light emitting device 1 according to the first embodiment will be described with reference to Fig. 1 to Fig. 4. Fig. 1 is a perspective view that schematically shows the light emitting device 1 according to the first embodiment. Fig. 2 is an enlarged top view that schematically shows the region II shown in Fig. 1 in the light emitting device 1 according to the first embodiment. Fig. 3 is an enlarged top view that schematically explains an example of the configuration within the unit region III shown in Fig. 2. Fig. 4 is a cross-sectional view that schematically shows a cross section taken along line IV-IV shown in Fig. 3.

[0020] <Overall Configuration of Light-Emitting Device 1> The light emitting device 1 includes a substrate 10, an insulating layer 20, a titanium (Ti) layer 31, a titanium nitride (TiN) layer 33, a titanium tungsten (TiW) layer 35, a metal layer 37, a conductive member 40, and a light emitting element 50. The light emitting device 1 may further include a package substrate 60, a wire interconnection 70, a light-shielding member 80, a wavelength conversion member 90, and a covering member 95. For ease of explanation, part of the wavelength conversion member 90 and part of the covering member 95 are omitted from FIG. 1. The light emitting element 50, which is covered by part of the wavelength conversion member 90 (not shown), and the wire interconnection 70, which is covered by part of the covering member 95 (not shown), are visualized in FIG.

[0021] 1 , the package substrate 60 includes a heat dissipation portion 61 and a plurality of terminals 62 arranged on the upper surface of the package substrate 60 in regions sandwiching the heat dissipation portion 61. The substrate 10 is supported by the package substrate 60, for example, via the heat dissipation portion 61. The terminals 18 arranged on the upper surface of the substrate 10 are electrically connected to the terminals 62 of the package substrate 60 via wire interconnections 70. The terminals 62 of the package substrate 60 are electrically connected to an external power supply. That is, the terminals 18 of the substrate 10 are electrically connected to the external power supply via the terminals 62 of the package substrate 60 and the wire interconnections 70. The terminals 18 arranged on the upper surface of the substrate 10, the terminals 62 arranged on the upper surface of the package substrate 60, and the wire interconnections 70 are covered with a covering member 95.

[0022] The wavelength conversion member 90 is disposed on the light emitting element 50. The wavelength conversion member 90 has, for example, a base material made of a translucent resin and a phosphor contained in the base material. The wavelength conversion member 90 converts part of the wavelength of the light emitted from the light emitting element 50 into light of another wavelength. This allows light of a predetermined color, such as blue light, green light, red light, or white light, to be extracted from the light emitting device 1.

[0023] The light emitting device 1 includes a plurality of light emitting elements 50. As shown in FIG. 2, the plurality of light emitting elements 50 are arranged on a substrate 10 along the X-axis direction and the Y-axis direction, respectively. The light blocking member 80 is disposed, for example, between the opposing side surfaces of adjacent light emitting elements 50, and between the substrate 10 and the plurality of light emitting elements 50. As shown in FIG. 2, a virtual rectangular region surrounding a single light emitting element 50 in a top view is referred to as a "unit region III." Adjacent light emitting elements 50 are each surrounded by adjacent unit regions III. That is, the plurality of unit regions III are arranged along the X-axis direction and the Y-axis direction, respectively, like the plurality of light emitting elements 50.

[0024] 3, the electrode 52 of the light-emitting element 50 surrounded by the unit region III, the opening 21 of the insulating layer 20, and the conductive member 40 are shown in perspective. Here, the insulating layer 20 is a layer located on the -Z side of the light-emitting element 50 and disposed on the substrate 10.

[0025] In the example shown in FIG. 3, four electrodes 52 are arranged in unit region III. That is, in the example shown in FIG. 3, a single light-emitting element 50 is provided with four electrodes 52. Of the four electrodes 52, two electrodes 52 located on the −X side correspond to either n-side electrodes or p-side electrodes. Of the four electrodes 52, two electrodes 52 located on the +X side correspond to the other of n-side electrodes or p-side electrodes. However, the number of electrodes 52 provided in a single light-emitting element 50 is not limited to this. It is sufficient that a single light-emitting element 50 is provided with at least two electrodes 52.

[0026] In top view, the openings 21 are provided in regions overlapping with the electrodes 52. In the example shown in Fig. 3, two openings 21 are provided that overlap with each electrode 52 in top view. That is, eight openings 21 are provided in unit region III. However, the number of openings 21 is not limited to this.

[0027] In top view, the conductive members 40 overlap the electrodes 52. The number of conductive members 40 preferably corresponds to the number of electrodes 52. In the example shown in FIG. 3, four conductive members 40 are provided in unit region III. However, the number of conductive members 40 is not limited to this. As will be described later with reference to FIG. 4, a Ti layer 31, a TiN layer 33, a TiW layer 35, and a metal layer 37 are arranged on the -Z side of each conductive member 40.

[0028] <Substrate 10> 1, the substrate 10 has a substantially rectangular outer shape when viewed from above. However, the substrate 10 may have other outer shapes, such as a substantially circular, elliptical, or polygonal shape when viewed from above. The substrate 10 may include an integrated circuit for controlling the light-emitting operation of the light-emitting elements 50. An example of the integrated circuit is an electronic circuit such as an ASIC (Application Specific Integrated Circuit). The integrated circuit is used to individually control the light-emitting operation of each of the multiple light-emitting elements 50.

[0029] As shown in Fig. 4, the substrate 10 has a base material 11 and copper (Cu) wiring 12. The Cu wiring 12 is electrically connected to a terminal 18, for example, via an internal wiring provided inside the base material 11. At least two Cu wirings 12 are provided in a unit region III. The two Cu wirings 12 are arranged at positions spaced apart from each other. However, the number of Cu wirings 12 is not limited to this.

[0030] The base material 11 is the base material of the substrate 10. As shown in FIG. 4, the base material 11 has an upper surface 11a, a lower surface 11b, and a side surface between the upper surface 11a and the lower surface 11b. The base material 11 is mainly made of an insulating or semiconducting material. Examples of materials that can be used to form the base material 11 include semiconductor substrates such as silicon, ceramic substrates such as aluminum nitride, and resin substrates such as glass epoxy. However, the materials that can be used to form the base material 11 are not limited to these.

[0031] The Cu wiring 12 has a substantially rectangular outer shape in top view. However, the Cu wiring 12 may have other outer shapes such as substantially circular, substantially elliptical, or substantially polygonal in top view. The Cu wiring 12 is disposed on the upper surface 11a side of the base material 11.

[0032] The Cu wiring 12 has an upper surface 12a, a lower surface 12b, and a side surface 12c between the upper surface 12a and the lower surface 12b. The upper surface 12a of the Cu wiring 12 is exposed from the upper surface 11a of the base material 11. The lower surface 12b and the side surface 12c of the Cu wiring 12 are located inside the base material 11.

[0033] <Insulating layer 20> As shown in FIG. 4, the insulating layer 20 is disposed on the base material 11 and on the Cu wiring 12. As described with reference to FIG. 3, the insulating layer 20 includes an opening 21. The opening 21 penetrates the insulating layer 20 in the Z-axis direction. The opening 21 is on the upper surface 12a of the Cu wiring 12, and the upper surface 11a of the base material 11 is covered with the insulating layer 20. In top view, it is preferable that the base material 11 is not exposed from the opening 21. It is preferable that only the Cu wiring 12 is exposed from the opening 21 and the interface between the Cu wiring 12 and the upper surface 11a of the base material 11 is not exposed from the opening 21. Thus, the possibility that the Cu wiring 12 comes into contact with corrosive substances such as sulfur and sulfur compounds can be reduced.

[0034] Examples of the material constituting the insulating layer 20 include oxide-based materials such as silicon oxide (SiO2), aluminum oxide (Al2O3), niobium oxide (Nb2O5), titanium oxide, and nitride-based materials such as silicon nitride (Si3N4), aluminum nitride (AlN). However, the material constituting the insulating layer 20 is not limited to these.

[0035] <Ti layer 31> The Ti layer 31 is a layer made of titanium. The Ti layer 31 covers at least the upper surface 12a of the Cu wiring 12. More specifically, the Ti layer 31 covers a region of the upper surface 12a of the Cu wiring 12 that overlaps with the opening 21 in a top view. The Ti layer 31 may also cover the inner surface 21a of the insulating layer 20 that defines the opening 21. The Ti layer 31 may also cover a portion of the upper surface of the insulating layer 20 that is continuous with the inner surface 21a. In a top view, the outer edge of the Ti layer 31 is located outside the outer edge of the opening 21. This allows the Ti layer 31 to cover the region of the upper surface 12a of the Cu wiring 12 that overlaps with the opening 21 in a top view. As a result, the generation of a path connecting the outside world and the Cu wiring 12 can be reduced. This reduces the possibility that the Cu wiring 12 will come into contact with corrosive substances such as sulfur and sulfur compounds. That is, corrosion of the Cu wiring 12, such as sulfurization, can be reduced.

[0036] Furthermore, for example, the Ti layer 31, which has high adhesion to metals, oxides, and nitrides, contacts the upper surface 12a of the Cu wiring 12, the inner surface 21a of the insulating layer 20, and a portion of the upper surface of the insulating layer 20 that is continuous with the inner surface 21a, thereby reducing peeling of the Ti layer 31. Furthermore, the Ti layer 31 also has high adhesion to the TiN layer 33. Therefore, by disposing the TiN layer 33 on the Cu wiring 12 via the Ti layer 31, it is possible to reduce separation of the TiN layer 33 from the Cu wiring 12. The thickness of the Ti layer 31 is preferably, for example, 30 nm to 2500 nm. However, the thickness of the Ti layer 31 is not limited to this.

[0037] In a top view, it is preferable that the outer edge of the Ti layer 31 is located closer to the center side of the metal layer 37 than the outer edge of the metal layer 37. Thereby, a concave space 31S that depresses, for example, in the X-axis direction can be provided below the metal layer 37. As shown in FIG. 4, a part of the light-shielding member 80 is located in the concave space 31S. That is, a part of the light-shielding member 80 located in the concave space 31S and the lower surface of the metal layer 37 face each other in the Z-axis direction. Therefore, even when a force acting upward on the light-shielding member 80 occurs, it is possible to reduce the light-shielding member 80 from separating from the substrate 10.

[0038] <TiN layer 33> The TiN layer 33 is a layer mainly containing titanium and nitrogen. The composition ratio of titanium and nitrogen in the TiN layer 33 is not limited. The TiN layer 33 may contain elements other than titanium and nitrogen. The TiN layer 33 is disposed on the Ti layer 31. The TiN layer 33 may cover the entire upper surface of the Ti layer 31 or may cover a part of the upper surface of the Ti layer 31. However, it is preferable that the TiN layer 33 covers at least the region of the Ti layer 31 that overlaps the upper surface 12a of the Cu wiring 12 in a top view. Thereby, the region of the upper surface 12a of the Cu wiring 12 that overlaps the opening 21 in a top view can be covered by the Ti layer 31 and the TiN layer 33. As a result, it is possible to further reduce the occurrence of a path connecting the external environment and the Cu wiring 12. Therefore, the corrosion of the Cu wiring 12 can be further reduced.

[0039] In a top view, it is preferable that the outer edge of the TiN layer 33 is located closer to the center side of the metal layer 37 than the outer edge of the metal layer 37. Thereby, a concave space 33S that depresses, for example, in the X-axis direction can be provided below the metal layer 37. The concave space 33S may be continuous with the concave space 31S outside the outer edge of the Ti layer 31. As shown in FIG. 4, a part of the light-shielding member 80 is located in the concave space 33S. That is, a part of the light-shielding member 80 located in the concave space 33S and the lower surface of the metal layer 37 face each other in the Z-axis direction. Therefore, even when a force acting upward on the light-shielding member 80 occurs, it is possible to reduce the light-shielding member 80 from separating from the substrate 10.

[0040] It is preferable that the thickness of the TiN layer 33 is smaller than the thickness of the TiW layer 35 on the TiN layer 33. By the thickness of the TiN layer 33 being smaller than the thickness of the TiW layer 35, it can be made thin. The thickness of the TiN layer 33 is preferably, for example, from 50 nm to 200 nm. However, the thickness of the TiN layer 33 is not limited thereto.

[0041] <TiW layer 35> The TiW layer 35 is a layer containing titanium and tungsten as main components. The composition ratio of titanium and tungsten in the TiW layer 35 is not limited. The TiW layer 35 may contain elements other than titanium and tungsten. The TiW layer 35 is disposed on the TiN layer 33. The TiW layer 35 may cover the entire upper surface of the TiN layer 33 or may cover a part of the upper surface of the TiN layer 33. Further, the TiW layer 35 may function as a seed layer for growing the conductive member 40.

[0042] In a top view, the outer edge of the TiW layer 35 is preferably located closer to the center of the metal layer 37 than the outer edge of the metal layer 37. This results in a recessed space 35S recessed in the X-axis direction, for example, below the metal layer 37. The recessed space 35S may be connected to a recessed space 33S located outside the outer edge of the TiN layer 33. As shown in FIG. 4, a portion of the light-shielding member 80 is located in the recessed space 35S. That is, the portion of the light-shielding member 80 located in the recessed space 35S faces the lower surface of the metal layer 37 in the Z-axis direction. Therefore, even if an upward force acts on the light-shielding member 80, it is possible to reduce the likelihood of the light-shielding member 80 being separated from the substrate 10.

[0043] The thickness of the TiW layer 35 can also be made smaller than the thickness of the metal layer 37. When the thickness of the TiW layer 35 is smaller than the thickness of the metal layer 37, a thin shape can be achieved. Conversely, the thickness of the metal layer 37 can be made larger than the thickness of the TiW layer 35, thereby increasing electrical conductivity. On the other hand, when the thickness of the TiW layer 35 is made smaller than the thickness of the metal layer 37, the thickness of the TiW layer 35 is preferably, for example, 100 nm to 300 nm. However, the thickness of the TiW layer 35 is not limited to this.

[0044] <Metal layer 37> The metal layer 37 is disposed on the TiW layer 35. The metal layer 37 includes at least one of gold (Au), platinum (Pt), ruthenium (Ru), palladium (Pd), and rhodium (Rh). The metal layer 37 may have a single-layer structure composed of one of these metal layers, or may have a multilayer structure in which different metal layers are stacked. This can improve the reliability of the metal layer 37. It can also improve the reflectivity of the metal layer 37. The thickness of the metal layer 37 is preferably, for example, 150 nm to 800 nm. However, the thickness of the metal layer 37 is not limited to this.

[0045] The metal layer 37 may function as a seed layer for growing the conductive member 40. Since the conductive member 40 contains Au, the metal layer 37 is preferably a layer similarly containing Au. Furthermore, from the viewpoint of corrosion resistance and the like, the metal layer 37 is more preferably a layer composed of Au alone. However, the configuration of the metal layer 37 is not limited to this.

[0046] <Conductive member 40> The conductive member 40 is disposed on the metal layer 37. The conductive member 40 is also bonded to the electrode 52 of the light-emitting element 50. The conductive member 40 may function as a bonding member between the substrate 10 and the light-emitting element 50. The thickness of the conductive member 40 is preferably, for example, 2500 nm to 5000 nm. However, the thickness of the conductive member 40 is not limited to this.

[0047] The conductive member 40 contains Au. Alternatively, the conductive member 40 may be composed of Au alone. When the conductive member 40 contains Au, the electrical resistance in the current path between the Cu wiring 12 and the electrode 52 can be reduced, and corrosion of the conductive member 40 can be reduced. In particular, corrosion resistance can be improved compared to conductive members containing Cu, which is highly reactive with corrosive substances such as sulfur and sulfur compounds.

[0048] <Light emitting element 50> The light emitting element 50 is a semiconductor light emitting element such as an LED (Light Emitting Diode) or an LD (Laser Diode). The light emitting element 50 has a semiconductor structure 51 and a plurality of electrodes 52. The semiconductor structure 51 includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, which are stacked in this order in the Z direction. The plurality of electrodes 52 includes an n-side electrode and a p-side electrode. The n-side electrode of the plurality of electrodes 52 is electrically connected to the n-type semiconductor layer of the semiconductor structure 51. On the other hand, the p-side electrode of the plurality of electrodes 52 is electrically connected to the p-type semiconductor layer of the semiconductor structure 51.

[0049] The semiconductor structure 51 emits, for example, blue light. Each of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer in the semiconductor structure 51 is made of, for example, InX Al Y Ga 1-X-Y The semiconductor structure 51 is made of a nitride-based semiconductor such as N (0≦X, 0≦Y, X+Y≦1). The upper surface of the semiconductor structure 51 corresponds to the light extraction surface.

[0050] The semiconductor structure 51 has a substantially rectangular outer shape when viewed from above. However, the semiconductor structure 51 may have other outer shapes, such as a substantially circular, elliptical, or polygonal shape when viewed from above. The semiconductor structure 51 has an upper surface, a lower surface, and side surfaces between the upper and lower surfaces. A protective film made of, for example, an insulating material may be disposed on the upper surface and side surfaces of the semiconductor structure 51. The side surfaces of the semiconductor structure 51 are covered with a light-shielding member 80. A plurality of electrodes 52 are disposed on the lower surface of the semiconductor structure 51. The plurality of electrodes 52 are disposed at positions spaced apart from one another on the lower surface of the semiconductor structure 51. The electrodes 52 include a metal, for example, Au.

[0051] The electrode 52 has a generally rectangular outer shape when viewed from above. However, the electrode 52 may have other outer shapes, such as a generally circular, oval, or polygonal shape when viewed from above. The electrode 52 is disposed on the conductive member 40.

[0052] <Light blocking member 80> The light-shielding member 80 preferably has light reflectivity. When the light-shielding member 80 has light reflectivity, light that is emitted from the light-emitting element 50 and then reaches the light-shielding member 80 can be reflected, for example, toward the +Z side. This can improve the light extraction efficiency of the light-emitting device 1.

[0053] The light-blocking member 80 is made of, for example, a resin material containing a light-reflecting substance. Examples of light-reflecting substances include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, and silicon oxide. It is preferable to use one of these alone or two or more of them in combination. Examples of resin materials include resin materials whose main component is a thermosetting resin, such as epoxy resin, epoxy-modified resin, silicone resin, silicone-modified resin, or phenolic resin.

[0054] <Method of Manufacturing Light-Emitting Device 1> Next, a manufacturing method of the light emitting device 1 according to the first embodiment will be described. The manufacturing method of the light emitting device 1 according to the first embodiment includes the steps of preparing a substrate 10, forming an insulating layer 20, forming a Ti layer 31, forming a TiN layer 33, forming a TiW layer 35, forming a metal layer 37, forming a resist layer 55, disposing a light emitting element 50, bonding a conductive member 40 to an electrode 52 of the light emitting element 50, removing the resist layer 55, and etching at least a portion of the TiW layer 35. For ease of explanation, the manufacturing method of the light emitting device 1 according to the first embodiment will be described using an example of an area corresponding to one unit area III described with reference to FIG. 3 , but the same applies to the other unit areas III.

[0055] <Step of Preparing the Substrate 10> The process of preparing the substrate 10 will be described with reference to FIGS. 5A and 5B. FIG. 5A schematically shows the top surface of a region of the substrate 10 corresponding to unit region III. FIG. 5B schematically shows a cross section taken along line VB-VB in FIG. 5A. As shown in FIGS. 5A and 5B, the prepared substrate 10 includes a base material 11 and Cu wiring 12 disposed on the top surface 11a of the base material 11. The top surface 11a of the base material 11 has a plurality of recesses, and the Cu wiring 12 is disposed in the recesses. After Cu is disposed in the recesses of the top surface 11a of the base material 11, the surface may be flattened by polishing, grinding, or the like to form the Cu wiring 12.

[0056] <Step of forming insulating layer 20> Next, a step of forming the insulating layer 20 is performed. The step of forming the insulating layer 20 will be described with reference to Figures 6A and 6B. Figure 6A schematically shows the top surface of a region corresponding to unit region III in an intermediate body including the substrate 10 and the insulating layer 20. Figure 6B schematically shows a cross section taken along line VIB-VIB shown in Figure 6A.

[0057] As shown in FIGS. 6A and 6B , an insulating layer 20 is formed on a substrate 10. Examples of methods for forming the insulating layer 20 include a chemical vapor deposition (CVD) method and a sputtering method. The insulating layer 20 is formed so that an opening 21 is located on at least a portion of the upper surface 12 a of the Cu wiring 12. For example, a mask is placed on the area corresponding to the opening 21, and the insulating layer 20 is formed on the area of ​​the substrate 10 other than the mask, thereby forming the opening 21 on at least a portion of the upper surface 12 a of the Cu wiring 12. Alternatively, the opening 21 can be located on at least a portion of the upper surface 12 a of the Cu wiring 12 by a process such as forming the insulating layer 20 uniformly on the substrate 10 and then removing the area corresponding to the opening 21. It is preferable that only the Cu wiring 12 is exposed through the opening 21, and the interface between the Cu wiring 12 and the base material 11 is not exposed through the opening 21. This is because the interface between the Cu wiring 12 and the base material 11 is covered with the insulating layer 20, thereby reducing the penetration of corrosive substances such as moisture, sulfur and sulfur compounds, and oxygen into the side and bottom surfaces of the Cu wiring 12.

[0058] <Step of forming Ti layer 31> Subsequently, perform the step of forming Ti layer 31. Referring to FIGS. 7A and 7B, the step of forming Ti layer 31 will be described. FIG. 7A schematically shows the upper surface of the region corresponding to unit region III in an intermediate body including substrate 10, insulating layer 20, and Ti layer 31. FIG. 7B schematically shows a cross-section cut along line VIIB-VIIB shown in FIG. 7A.

[0059] As shown in FIGS. 7A and 7B, form Ti layer 31 so as to cover upper surface 12a of Cu wiring 12. That is, the region of upper surface 12a of Cu wiring 12 that overlaps with opening 21 in top view is covered with Ti layer 31. Thereby, upper surface 12a of Cu wiring 12 is covered with insulating layer 20 or Ti layer 31. Also, Ti layer 31 may be formed so as to cover inner surface 21a of insulating layer 20 that defines opening 21. Further, Ti layer 31 may be formed so as to cover a part of the upper surface of insulating layer 20 that continues from inner surface 21a. Examples of methods for forming Ti layer 31 include sputtering method, vacuum evaporation method, CVD method, ALD (Atomic Layer Deposition) method, etc. At this time, Ti layer 31 preferably covers not only the exposed Cu wiring 12 but also a part of insulating layer 20 on the outer periphery of the exposed Cu wiring 12. Thereby, the exposed Cu wiring 12 from insulating layer 20 can be completely covered with Ti layer 31. In particular, corrosion of Cu wiring 1 can be reduced by reducing corrosive substances such as sulfur that penetrate from the outer periphery of Ti layer 31 through the interface between Ti layer 31 and insulating layer 20. This is because the intrusion path of corrosive substances and the like can be lengthened.

[0060] <Step of forming TiN layer 33> Subsequently, perform the step of forming TiN layer 33. Referring to FIGS. 8A and 8B, the step of forming TiN layer 33 will be described. FIG. 8A schematically shows the upper surface of the region corresponding to unit region III in an intermediate body including substrate 10, insulating layer 20, Ti layer 31, and TiN layer 33. FIG. 8B schematically shows a cross-section cut along line VIIIB-VIIIB shown in FIG. 8A.

[0061] As shown in FIGS. 8A and 8B, a TiN layer 33 is formed on the Ti layer 31. The TiN layer 33 may be formed so as to cover the entire upper surface of the Ti layer 31, or the TiN layer 33 may be formed so as to cover a part of the upper surface of the Ti layer 31. However, when covering a part of the upper surface of the Ti layer 31, it is preferable to form the TiN layer 33 so as to cover at least the region of the upper surface of the Ti layer 31 that overlaps the opening 21 in a top view. Examples of methods for forming the TiN layer 33 include a sputtering method, a vacuum evaporation method, a CVD method, an ALD method, and the like.

[0062] <Step of forming the TiW layer 35> Subsequently, a step of forming the TiW layer 35 is performed. Referring to FIGS. 9A and 9B, the step of forming the TiW layer 35 will be described. FIG. 9A schematically shows the upper surface of a region corresponding to the unit region III in an intermediate body including the substrate 10, the insulating layer 20, the Ti layer 31, the TiN layer 33, and the TiW layer 35. FIG. 9B schematically shows a cross section taken along the line IXB-IXB shown in FIG. 9A.

[0063] As shown in FIGS. 9A and 9B, a TiW layer 35 is formed on the TiN layer 33. Here, the TiW layer 35 can also function as a seed layer for electroplating growth of the conductive member 40. Therefore, the TiW layer 35 is formed so as to correspond to the current path for electroplating growth of the conductive member 40. For example, as shown in FIG. 9A, the TiW layer 35 is formed to include two regions 35Y1 and 35Y2 extending in the Y-axis direction, and two regions 35X1 and 35X2 that intersect the regions 35Y1 and 35Y2, respectively, and extend in the X-axis direction. In a top view, the regions 35Y1 and 35Y2 overlap the TiN layer 33. The regions 35X1 and 35X2 are respectively connected to the regions 35X1 and 35X2 of the TiW layer 35 in the adjacent unit region III. Examples of methods for forming the TiW layer 35 include a sputtering method, a vacuum evaporation method, a CVD method, an ALD method, and the like.

[0064] The thickness of the TiN layer 33 is smaller than the thickness of the TiW layer 35. This is because the Ti layer 31 and the TiN layer 33 are entirely covered with the TiW layer 35, and therefore, during etching, the etchant hits the TiN layer 33 after etching the TiW layer 35. This allows for a margin of error in the process of etching the TiN layer 33.

[0065] <Step of forming metal layer 37> Next, a step of forming a metal layer 37 is performed. The step of forming the metal layer 37 will be described with reference to Figures 10A and 10B. Figure 10A schematically shows the top surface of a region corresponding to unit region III in an intermediate body including a substrate 10, an insulating layer 20, a Ti layer 31, a TiN layer 33, a TiW layer 35, and a metal layer 37. Figure 10B schematically shows a cross section taken along line XB-XB shown in Figure 10A.

[0066] As shown in FIGS. 10A and 10B , a metal layer 37 is formed on a TiW layer 35. The metal layer 37 includes at least one of Au, Pt, Ru, Pd, and Rh. Like the TiW layer 35, the metal layer 37 can also function as a seed layer for plating the conductive member 40 (described separately). Therefore, it is preferable to form the metal layer 37 so that it overlaps the TiW layer 35 in a top view. For example, as shown in FIG. 10A , the metal layer 37 is formed to include two regions 37Y1 and 37Y2 extending in the Y-axis direction and two regions 37X1 and 37X2 extending in the X-axis direction, intersecting with the regions 37Y1 and 37Y2, respectively. The regions 37X1 and 37X2 are connected to the regions 37X1 and 37X2 of the metal layer 37 in the adjacent unit region III, respectively. Examples of methods for forming the metal layer 37 include sputtering, vacuum deposition, CVD, and ALD.

[0067] <Step of forming resist layer 55 and step of arranging light emitting element 50> Next, a step of forming a resist layer 55 and a step of arranging the light-emitting element 50 are performed. The steps of forming the resist layer 55 and arranging the light-emitting element 50 will be described with reference to FIGS. 11A and 11B. FIG. 11A schematically shows the top surface of a region corresponding to unit region III in an intermediate body including the substrate 10, the insulating layer 20, the Ti layer 31, the TiN layer 33, the TiW layer 35, the metal layer 37, and the light-emitting element 50. FIG. 11B schematically shows a cross section taken along line XIB-XIB shown in FIG. 11A.

[0068] 11B, a resist layer 55 is formed extending from the upper surface of the insulating layer 20 to the +Z side. Photolithography is an example of a method for forming the resist layer 55. However, the method for forming the resist layer 55 is not limited to this.

[0069] After forming the resist layer 55, the light emitting element 50 is placed on the metal layer 37 using any transport means. At this time, the lower surface of the semiconductor structure 51 in the light emitting element 50 is supported on the upper surface of the resist layer 55. As a result, the light emitting element 50 is placed at a position spaced apart from the metal layer 37. The electrode 52 placed on the lower surface side of the light emitting element 50 is placed at a position spaced apart from the metal layer 37 and faces the metal layer 37.

[0070] <Step of Bonding the Conductive Member 40 and the Electrode 52 of the Light-Emitting Element 50, and Step of Removing the Resist Layer 55> Next, a step of bonding the conductive member 40 and the electrode 52 of the light-emitting element 50 is performed. The step of bonding the conductive member 40 and the electrode 52 of the light-emitting element 50 and the step of removing the resist layer 55 will be described with reference to FIGS. 12A and 12B . FIG. 12A schematically shows the top surface of a region corresponding to unit region III in an intermediate body including the substrate 10, the insulating layer 20, the Ti layer 31, the TiN layer 33, the TiW layer 35, the metal layer 37, the light-emitting element 50, and the conductive member 40. FIG. 12B schematically shows a cross section taken along line XIIB-XIIB shown in FIG. 12A.

[0071] As shown in FIGS. 12A and 12B, a conductive member 40 is formed on the metal layer 37. The conductive member 40 contains Au. A plating method can be used to form the conductive member 40. For example, the conductive member 40 is formed using electrolytic plating. The conductive member 40 is grown by plating using the TiW layer 35 and the metal layer 37 as seed layers.

[0072] When forming the conductive member 40 by electroplating, first, the intermediate body before the conductive member 40 is formed and the gold electrode are each immersed in an electroplating solution. Next, an external voltage is applied to the intermediate body and the gold electrode so that the TiW layer 35 and metal layer 37 of the intermediate body serve as the cathode and the gold electrode serves as the anode. As a result, the conductive member 40 extending toward the +Z side is formed on the metal layer 37. That is, the upper surface of the conductive member 40 contacts the lower surface of the electrode 52. This allows the conductive member 40 and the electrode 52 to be bonded. After bonding the conductive member 40 and the electrode 52, a step of removing the resist layer 55 is performed. For example, the resist layer 55 is removed using a stripping solution or the like.

[0073] <Step of Etching at Least a Part of the TiW Layer 35> Next, a step of etching at least a portion of the TiW layer 35 is performed. Referring to Figures 13A and 13B, a step of etching at least a portion of the TiW layer 35 is performed. Figure 13A schematically shows the top surface of a region corresponding to unit region III in light-emitting device 1. Figure 13B schematically shows a cross section taken along line XIIIB-XIIIB shown in Figure 13A.

[0074] A portion of the metal layer 37 may be etched prior to etching at least a portion of the TiW layer 35. An example of a method for etching a portion of the metal layer 37 is wet etching using an etchant that removes materials constituting the metal layer 37. The etching of the metal layer 37 is performed using the conductive member 40 as a mask, and therefore, as shown in FIG. 13B , a portion of the metal layer 37 that does not overlap with the conductive member 40 in top view is removed. Alternatively, a portion of the metal layer 37 that overlaps with the conductive member 40 in top view may be removed by side etching.

[0075] After etching a portion of the metal layer 37, at least a portion of the TiW layer 35 is etched. An example of a method for etching at least a portion of the TiW layer 35 is wet etching using an etchant that removes the TiW layer 35. An example of an etchant that removes the TiW layer 35 is a hydrogen peroxide-based etchant. However, the etchant that removes the TiW layer 35 is not limited to this. Since the TiW layer 35 is etched using the conductive member 40 as a mask, as shown in FIG. 13B , a portion of the TiW layer 35 that does not overlap with the conductive member 40 in top view is removed. Alternatively, a portion of the TiW layer 35 that overlaps with the conductive member 40 in top view may be removed by side etching. By etching the metal layer 37 and the TiW layer 35, the plurality of light-emitting elements 50 become electrically isolated from one another.

[0076] As shown in FIG. 13B, a region of the upper surface 12a of the Cu wiring 12 that overlaps with the opening 21 in a top view is covered with a Ti layer 31. In the example shown in FIG. 13B, a region of the upper surface 12a of the Cu wiring 12 that overlaps with the opening 21 in a top view is further covered with a TiN layer 33. As a result, even if a portion of the region of the TiW layer 35 that overlaps with the conductive member 40 in a top view is removed by side etching, a path connecting the Cu wiring 12 with the outside world is not formed. As a result, the possibility that the Cu wiring 12 will come into contact with a corrosive substance can be reduced. That is, corrosion of the Cu wiring 12 can be reduced.

[0077] The light emitting device 1 is obtained through these steps. However, the manufacturing method of the light emitting device 1 may include other steps as appropriate. The manufacturing method of the light emitting device 1 may include, for example, a step of forming a light blocking member 80 between the opposing side surfaces of adjacent light emitting elements 50 and between the substrate 10 and the light emitting element 50, a step of forming a wavelength conversion member 90 on the light emitting element 50, a step of arranging wire wiring 70 that electrically connects the substrate 10 and the package substrate 60, a step of forming a covering member 95 that covers the wire wiring 70, etc.

[0078] [Second Embodiment] Referring to FIGS. 14 to 16, an example of the configuration of the light-emitting device 1A according to the second embodiment will be described. FIG. 1 is a perspective view schematically showing the light-emitting device 1 according to the first embodiment. FIG. 14 is a schematic enlarged top view for explaining a configuration example within the unit region III in the light-emitting device 1A according to the second embodiment. Also in FIG. 14, the electrode 52 of the light-emitting element 50 surrounded by the unit region III, the opening 21 of the insulating layer 20, and the conductive member 40 are shown in a perspective manner. FIG. 15 is a cross-sectional view schematically showing a cross-section cut along the line XV-XV shown in FIG. 14. FIG. 16 is a cross-sectional view schematically showing a cross-section cut along the line XVI-XVI shown in FIG. 14. In the second embodiment, for the components having the same configuration as in the first embodiment, the same reference numerals are given, and the description will be omitted as appropriate.

[0079] <Overall Configuration of the Light-Emitting Device 1A> The light-emitting device 1A includes a substrate 10, an insulating layer 20, an underlayer 30A, a metal layer 37, a conductive member 40, and a light-emitting element 50. The underlayer 30A in the second embodiment is different from that in the first embodiment. The underlayer 30A is disposed on the -Z side of the conductive member 40. Also, the underlayer 30A reduces the contact between the Cu wiring 12 of the substrate 10 and the corrosive substance. The metal layer 37 is disposed between the underlayer 30A and the conductive member 40.

[0080] The underlayer 30A may have a single-layer structure composed of one type of metal or alloy, or may have a laminated structure in which two or more layers composed of different metals or alloys are stacked. For example, the underlayer 30A includes a TiW layer 35A and a first Ti layer 31A. Also, in the example shown in FIG. 15, the underlayer 30A further includes a Pt layer 39. However, the configuration of the underlayer 30A is not limited to this.

[0081] <TiW Layer 35A> The TiW layer 35A is a layer containing titanium and tungsten as its main components. The composition ratio of titanium and tungsten in the TiW layer 35A is not limited. The TiW layer 35A may contain elements other than titanium and tungsten. The TiW layer 35A may function as a seed layer for growing the conductive member 40.

[0082] 15, the TiW layer 35A has a top surface 35A1, a bottom surface 35A2, an outer surface 35A3, an inner surface 35A4, and an inner bottom surface 35A5. The outer surface 35A3 defines the outer edge of the TiW layer 35A. The outer surface 35A3 is between the top surface 35A1 of the TiW layer 35A and the top surface of the insulating layer 20. The inner surface 35A4 of the TiW layer 35A is between the top surface 35A1 and the inner bottom surface 35A5.

[0083] The TiW layer 35A covers the upper surface 12a of the Cu wiring 12. More specifically, the TiW layer 35A covers a region of the upper surface 12a of the Cu wiring 12 that overlaps with the opening 21 in a top view. The TiW layer 35A also covers the inner surface 21a of the insulating layer 20 that defines the opening 21. The TiW layer 35A also covers a portion of the upper surface of the insulating layer 20 that is continuous with the inner surface 21a. This allows the TiW layer 35A to cover the region of the upper surface 12a of the Cu wiring 12 that overlaps with the opening 21 in a top view. As a result, the generation of a path connecting the outside world and the Cu wiring 12 can be reduced. This reduces the possibility that the Cu wiring 12 will come into contact with corrosive substances such as sulfur and sulfur compounds. That is, corrosion of the Cu wiring 12, such as sulfurization, can be reduced.

[0084] <1st Ti layer 31A> The first Ti layer 31A is a layer composed of titanium. The first Ti layer 31A covers the upper surface 35A1 and the outer surface 35A3 of the TiW layer 35A respectively. Also, the first Ti layer 31A may cover the inner surface 35A4 and the inner bottom surface 35A5 of the TiW layer 35A respectively. By the first Ti layer 31A covering at least the upper surface 35A1 and the outer surface 35A3 of the TiW layer 35A respectively, it is possible to further reduce the occurrence of a path connecting the external world and the Cu wiring 12.

[0085] As shown in FIG. 15, the first Ti layer 31A covers a region adjacent to the outer surface 35A3 of the TiW layer 35A on the upper surface of the insulating layer 20. The outer surface 31A3 defining the outer edge of the first Ti layer 31A is located on the insulating layer 20. Also, in a top view, the outer surface 31A3 of the first Ti layer 31A is located closer to the center side of the first Ti layer 31A compared to, for example, the outer surface 39A3 of the Pt layer 39. The outer surface 31A3 of the first Ti layer 31A corresponds to the outer surface of the underlying layer 30A. In other words, the underlying layer 30A includes a recess 30A1 that depresses toward the center side of the underlying layer 30A in a top view from at least a partial region of the outer surface of the underlying layer 30A.

[0086] Also, as shown in FIG. 16, in the first Ti layer 31A, a recess 30A2 that depresses toward the center side of the first Ti layer 31A is provided at an outer surface 31A4 that is at a position different from the outer surface 31A3. The outer surface 31A4 of the first Ti layer 31A corresponds to another outer surface of the underlying layer 30A. That is, the underlying layer 30A further includes another recess 30A2 that is at a position different from the recess 30A1.

[0087] A part of the light-shielding member 80 is also located in the recesses 30A1, 30A2. That is, the light-shielding member 80 located in the recesses 30A1, 30A2 and the region on the +Z side of the underlying layer 30A face each other in the Z-axis direction. Therefore, even when a force acting upward on the light-shielding member 80 occurs, it is possible to further reduce the light-shielding member 80 from separating from the substrate 10.

[0088] <Pt layer 39> 15 and 16, the Pt layer 39 is disposed between the first Ti layer 31A and the metal layer 37. When the base layer 30A includes the Pt layer 39, corrosion of the Cu wiring 12 can be further reduced.

[0089] <Other> Furthermore, the underlayer 30A may include a TiN layer and a second Ti layer between the first Ti layer 31A and the Pt layer 39. The TiN layer is preferably disposed on the first Ti layer 31A. The TiN layer can further reduce corrosion of the Cu wiring 12. The second Ti layer is preferably disposed on the TiN layer. The second Ti layer can function as an adhesion layer between the TiN layer and the metal layer 37.

[0090] <Method of Manufacturing Light-Emitting Device 1A> Next, a manufacturing method of the light emitting device 1A according to the second embodiment will be described. The manufacturing method of the light emitting device 1A according to the second embodiment includes the steps of preparing a substrate 10, forming an insulating layer 20, forming a first TiW layer and a second TiW layer, forming a first Ti layer 31A, forming a metal layer 37, forming a resist layer 55, disposing a light emitting element 50, bonding a conductive member 40 to an electrode 52 of the light emitting element 50, removing the resist layer 55, and etching the second TiW layer. For ease of explanation, the manufacturing method of the light emitting device 1A according to the second embodiment will be described using an example of an area corresponding to one unit area III, but the same applies to the other unit areas III.

[0091] The process of preparing the substrate 10, the process of forming the insulating layer 20, the process of forming the metal layer 37, the process of forming the resist layer 55, the process of arranging the light-emitting element 50, the process of bonding the conductive member 40 to the electrode 52 of the light-emitting element 50, and the process of removing the resist layer 55 are the same as those in the first embodiment, and therefore will not be described here.

[0092] <Step of forming first TiW layer and second TiW layer> After the step of forming the insulating layer 20, the step of forming the first TiW layer and the second TiW layer is performed. The step of forming the first TiW layer and the second TiW layer will be described with reference to FIGS. 17A and 17B. The first TiW layer corresponds to the TiW layer 35A described with reference to FIGS. 15 and 16. Hereinafter, the first TiW layer will be referred to as the "first TiW layer 35A." The second TiW layer will be referred to as the "second TiW layer 35B." FIG. 17A schematically illustrates the top surface of a region corresponding to unit region III in an intermediate body including the substrate 10, the insulating layer 20, the first TiW layer 35A, and the second TiW layer 35B. FIG. 17B schematically illustrates a cross section taken along line XVIIB-XVIIB in FIG. 17A.

[0093] As shown in FIGS. 17A and 17B , a first TiW layer 35A is formed to cover the upper surface 12a of the Cu wiring 12. That is, a region of the upper surface 12a of the Cu wiring 12 that overlaps with the opening 21 in a top view is covered with the first TiW layer 35A. As a result, the upper surface 12a of the Cu wiring 12 is covered with the insulating layer 20 or the first TiW layer 35A. The first TiW layer 35A is also formed to cover the inner surface 21a of the insulating layer 20 that defines the opening 21. Furthermore, the first TiW layer 35 is formed to cover a portion of the upper surface of the insulating layer 20 that is continuous with the inner surface 21a. The method for forming the first TiW layer 35A may be the same as the method for forming the TiW layer 35 in the first embodiment.

[0094] The second TiW layer 35B is formed at the same timing as the formation of the first TiW layer 35A or at a timing different from the formation of the first TiW layer 35A. As shown in FIG. 17A, the second TiW layer 35B is formed on the upper surface of the insulating layer 20 at a position spaced apart from the first TiW layer 35A. In the example shown in FIG. 17A, seven second TiW layers 35B are formed, but the number of second TiW layers 35B is not limited to this. The second TiW layers 35B are formed at positions spaced apart from each other on the upper surface of the insulating layer 20. The method for forming the second TiW layers 35B may be the same as the method for forming the TiW layer 35 in the first embodiment.

[0095] <Step of forming first Ti layer 31A> Next, a step of forming a first Ti layer 31A is performed. The step of forming the first Ti layer 31A will be described with reference to FIGS. 18A and 18B. FIG. 18A schematically shows the top surface of a region corresponding to unit region III in an intermediate body including a substrate 10, an insulating layer 20, a first TiW layer 35A, a second TiW layer 35B, and the first Ti layer 31A. FIG. 18B schematically shows a cross section taken along line XVIIIB-XVIIIB shown in FIG. 18A.

[0096] 18A and 18B, the first Ti layer 31A is formed to cover an upper surface 35A1 of the first TiW layer 35A and an outer surface 35A3 of the first TiW layer 35A located between the upper surface 35A1 of the first TiW layer 35A and the upper surface of the insulating layer 20 (see FIG. 18B). The first Ti layer 31A is also formed to cover a portion of the second TiW layer 35B (see FIG. 18A). The second TiW layer 35B has a region overlapping with the first Ti layer 31A and a region not overlapping with the first Ti layer 31A in a top view.

[0097] In the step of forming the metal layer 37, which is performed after the step of forming the first Ti layer 31A, the metal layer 37 is formed on the first Ti layer 31A. The second TiW layer 35B has a region that overlaps with the metal layer 37 and a region that does not overlap with the metal layer 37 in a top view. This forms a current path for plating growth of the conductive member 40, including the first Ti layer 31A, the first TiW layer 35A, the second TiW layer 35B, and the metal layer 37. The method for forming the first Ti layer 31A may be the same as the method for forming the Ti layer 31 in the first embodiment. Note that a step of forming a Pt layer 39 may be performed between the step of forming the first Ti layer 31A and the step of forming the metal layer 37. As a result, the Pt layer 39 is disposed between the first Ti layer 31A and the metal layer 37.

[0098] <Step of Etching Second TiW Layer 35B> Next, the step of etching the second TiW layer 35B is performed. The step of etching the second TiW layer 35B will be described with reference to FIGS. 19A to 19C. FIG. 19A schematically shows the top surface of a region corresponding to unit region III in the light emitting device 1A. FIG. 19B schematically shows a cross section taken along line XIXB-XIXB in FIG. 19A. FIG. 19C schematically shows a cross section taken along line XIXC-XIXC in FIG. 19A.

[0099] The second TiW layer 35B is etched by wet etching using a predetermined etchant. At this time, as shown in FIGS. 19A and 19B, the first TiW layer 35A is located apart from the second TiW layer 35B and is covered by the first Ti layer 31A. Therefore, when etching the second TiW layer 35B, the etchant does not reach the first TiW layer 35A. This allows the second TiW layer 35B to be removed while leaving the first TiW layer 35A covering the Cu wiring 12. In other words, the generation of a path connecting the external environment to the Cu wiring 12 can be reduced, while each of the multiple light-emitting elements 50 can be electrically isolated. The etchant used to etch the second TiW layer 35B may be the same as the etchant used to etch a portion of the TiW layer 35 in the first embodiment.

[0100] The etchant used to etch the second TiW layer 35B may slightly remove the first Ti layer 31A. Therefore, when etching the second TiW layer 35B, the outer surface 31A3 of the first Ti layer 31A is slightly removed. As a result, as shown in FIG. 19B , the outer surface 31A3 of the first Ti layer 31A is located closer to the center of the first Ti layer 31A than, for example, the outer surface 39A3 of the Pt layer 39. The region of the first Ti layer 31A removed by the etchant used to etch the second TiW layer 35B corresponds to the recess 30A1 of the base layer 30A described with reference to FIG. 15 .

[0101] Furthermore, as the second TiW layer 35B is etched, the region of the second TiW layer 35B that overlaps with the first Ti layer 31A in a top view is also removed. That is, the region where the second TiW layer 35B and the first Ti layer 31A overlap in a top view before etching becomes a cavity due to the etching of the second TiW layer 35B. For example, in the example shown in FIG. 19C , a cavity recessed toward the center of the first Ti layer 31A is formed in the outer surface 31A4 of the first Ti layer 31A. This cavity corresponds to the recess 30A2 of the base layer 30A described with reference to FIG. 16.

[0102] In the step of arranging the light shielding member 80, which is performed after the step of forming the second TiW layer 35B, a portion of the light shielding member 80 is also positioned in the recesses 30A1 and 30A2. This causes the light shielding member 80 positioned in the recesses 30A1 and 30A2 to face the +Z side region of the base layer 30A in the Z-axis direction. As a result, even if an upward force is generated on the light shielding member 80, it is possible to reduce the separation of the light shielding member 80 from the substrate 10.

[0103] The light emitting device 1A is obtained through these steps. However, the manufacturing method of the light emitting device 1A may include other steps as appropriate. In the manufacturing method of the light emitting device 1A, the "step of forming the first TiW layer 35A and the second TiW layer 35B" is replaced with the "step of forming the first base layer and the second base layer." Furthermore, the "step of etching the second TiW layer 35B" is replaced with the "step of etching the second base layer."

[0104] The first underlayer corresponds to a layer including the first TiW layer 35A. The second underlayer corresponds to a layer including the second TiW layer 35B. However, the first underlayer is not limited to a configuration including the first TiW layer 35A. The second underlayer is not limited to a configuration including the second TiW layer 35B.

[0105] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0106] Aspects of the present disclosure are, for example, as follows. <Item 1> A substrate including a base material and a Cu wiring disposed on the upper surface side of the base material; an insulating layer disposed on the substrate and having an opening over at least a portion of an upper surface of the Cu wiring; a Ti layer covering at least the upper surface of the Cu wiring; a TiN layer disposed on the Ti layer; a TiW layer disposed on the TiN layer; a metal layer disposed on the TiW layer and including at least one of Au, Pt, Ru, Pd, and Rh; a conductive member including Au and disposed on the metal layer; a light-emitting element including an electrode disposed on the conductive member; A light emitting device comprising: <Item 2> The thickness of the TiW layer is smaller than the thickness of the metal layer. The light emitting device according to <Item 1> or <Item 2>. <Item 3> The thickness of the TiN layer is smaller than the thickness of the TiW layer. The light emitting device according to <Item 1>. <Item 4> When viewed from above, the outer edge of the TiW layer is located closer to the center of the metal layer than the outer edge of the metal layer. The light emitting device according to any one of <Item 1> to <Item 3>. <Item 5> A substrate comprising a base material and a Cu wiring disposed on the upper surface side of the base material; an insulating layer disposed on the substrate and having an opening over at least a portion of an upper surface of the Cu wiring; a TiW layer covering the upper surface of the Cu wiring, an inner surface of the insulating layer defining the opening, and a portion of the upper surface of the insulating layer connected to the inner surface; a first Ti layer covering an upper surface of the TiW layer and covering an outer surface of the TiW layer between the upper surface of the TiW layer and the upper surface of the insulating layer; a metal layer disposed on the first Ti layer and including at least one of Au, Pt, Ru, Pd, and Rh; a conductive member including Au and disposed on the metal layer; a light-emitting element including an electrode disposed on the conductive member; A light emitting device comprising: <Item 6> Further comprising a Pt layer disposed between the first Ti layer and the metal layer, The metal layer is made of Au. The light emitting device according to <Item 5>. <Item 7> A TiN layer disposed on the first Ti layer; a second Ti layer disposed on the TiN layer; The light emitting device according to <Item 5> or <Item 6> further comprises: <Item 8> A substrate comprising a base material and Cu wiring arranged on the upper surface side of the base material; an insulating layer disposed on the substrate and having an opening over at least a portion of an upper surface of the Cu wiring; an underlayer covering the upper surface of the Cu wiring, an inner surface of the insulating layer that defines the opening, and a portion of the upper surface of the insulating layer that is continuous with the inner surface; a metal layer disposed on the underlayer and including at least one of Au, Pt, Ru, Pd, and Rh; a conductive member including Au and disposed on the metal layer; a light-emitting element including an electrode disposed on the conductive member; Equipped with A light-emitting device, wherein the portion of the base layer that covers a portion of the upper surface of the insulating layer comprises an outer surface that defines the outer edge of the base layer, and a recess that is recessed from at least a portion of the outer surface toward the center of the base layer when viewed from above. <Item 9> A step of preparing a substrate including a base material and a Cu wiring disposed on the upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of an upper surface of the Cu wiring; forming a Ti layer to cover the upper surface of the Cu wiring; forming a TiN layer on the Ti layer; forming a TiW layer on the TiN layer; forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on the TiW layer; forming a resist layer on at least a portion of the insulating layer; a step of disposing a light emitting element on the resist layer at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating, and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; Etching at least a portion of the TiW layer that does not overlap with the conductive member in a top view; A method for manufacturing a light emitting device, comprising: <Item 10> A step of preparing a substrate including a base material and a Cu wiring disposed on the upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of an upper surface of the Cu wiring; a step of forming a first TiW layer and a second TiW layer, the first TiW layer covering the upper surface of the Cu wiring, an inner surface of the insulating layer defining the opening, and a part of the upper surface of the insulating layer connected to the inner surface, and the second TiW layer being formed on the upper surface of the insulating layer at a position spaced apart from the first TiW layer; forming a first Ti layer to cover an upper surface of the first TiW layer and an outer surface of the first TiW layer between the upper surface of the first TiW layer and the upper surface of the insulating layer; forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on the first Ti layer; forming a resist layer on at least a portion of the insulating layer; a step of disposing a light emitting element on the resist layer at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating, and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; etching the second TiW layer; A method for manufacturing a light emitting device, comprising: <Item 11> A step of preparing a substrate including a base material and a Cu wiring disposed on the upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of an upper surface of the Cu wiring; a step of forming a first underlayer and a second underlayer, the step of forming a first underlayer that covers the upper surface of the Cu wiring, an inner surface of the insulating layer that defines the opening, and a part of the upper surface of the insulating layer that is continuous with the inner surface, and forming the second underlayer on the upper surface of the insulating layer at a position spaced apart from the first underlayer; forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on at least the first underlayer; forming a resist layer on at least a portion of the insulating layer; a step of disposing a light emitting element on the resist at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating, and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; Etching the second underlayer; A method for manufacturing a light emitting device, comprising: [Explanation of symbols]

[0107] 1.1A Light Emitting Device 10 Substrate 11 Base material 12 Cu wiring 20 insulating layer 21 Opening 30A base layer 30A1, 30A2 recess 31 Ti layer 31A 1st Ti layer 33 TiN layer 35 TiW layers 35A 1st TiW layer 35B 2nd TiW layer 37 Metal layer 40 Conductive material 50 Light-emitting element 51 Semiconductor structure 52 electrodes 55 Resist layer 60 Package substrate 70 Wire Routing 80 Light blocking material 90 Wavelength conversion material 95 Covering materials

Claims

1. a substrate including a base material and Cu wiring disposed on an upper surface side of the base material; an insulating layer disposed on the substrate and having an opening over at least a portion of an upper surface of the Cu wiring; a Ti layer covering at least the upper surface of the Cu wiring; a TiN layer disposed on the Ti layer; a TiW layer disposed on the TiN layer; a metal layer disposed on the TiW layer and including at least one of Au, Pt, Ru, Pd, and Rh; a conductive member including Au and disposed on the metal layer; a light-emitting element including an electrode disposed on the conductive member; A light emitting device comprising:

2. the thickness of the TiW layer is less than the thickness of the metal layer; The light emitting device according to claim 1 .

3. the thickness of the TiN layer is less than the thickness of the TiW layer; The light emitting device according to claim 1 or 2.

4. When viewed from above, an outer edge of the TiW layer is located closer to the center of the metal layer than an outer edge of the metal layer. The light emitting device according to claim 1 or 2.

5. a substrate including a base material and Cu wiring disposed on an upper surface side of the base material; an insulating layer disposed on the substrate and having an opening over at least a portion of an upper surface of the Cu wiring; a TiW layer covering the upper surface of the Cu wiring, an inner surface of the insulating layer defining the opening, and a portion of the upper surface of the insulating layer connected to the inner surface; a first Ti layer covering an upper surface of the TiW layer and covering an outer surface of the TiW layer between the upper surface of the TiW layer and the upper surface of the insulating layer; a metal layer disposed on the first Ti layer, the metal layer including at least one of Au, Pt, Ru, Pd, and Rh; a conductive member including Au and disposed on the metal layer; a light-emitting element including an electrode disposed on the conductive member; A light emitting device comprising:

6. a Pt layer disposed between the first Ti layer and the metal layer; The metal layer is made of Au. The light emitting device according to claim 5 .

7. a TiN layer disposed on the first Ti layer; a second Ti layer disposed on the TiN layer; The light emitting device of claim 5 further comprising:

8. a substrate including a base material and Cu wiring disposed on an upper surface side of the base material; an insulating layer disposed on the substrate and having an opening over at least a portion of an upper surface of the Cu wiring; an underlayer covering the upper surface of the Cu wiring, an inner surface of the insulating layer defining the opening, and a portion of the upper surface of the insulating layer connected to the inner surface; a metal layer disposed on the underlayer and including at least one of Au, Pt, Ru, Pd, and Rh; a conductive member including Au and disposed on the metal layer; a light-emitting element including an electrode disposed on the conductive member; Equipped with A light-emitting device, wherein the portion of the base layer that covers a portion of the upper surface of the insulating layer comprises an outer surface that defines the outer edge of the base layer, and a recess that is recessed from at least a portion of the outer surface toward the center of the base layer when viewed from above.

9. A step of preparing a substrate including a base material and Cu wiring disposed on an upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of an upper surface of the Cu wiring; forming a Ti layer to cover the upper surface of the Cu wiring; forming a TiN layer on the Ti layer; forming a TiW layer on the TiN layer; forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on the TiW layer; forming a resist layer on at least a portion of the insulating layer; a step of disposing a light emitting element on the resist layer at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating, and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; Etching at least a portion of the TiW layer that does not overlap with the conductive member in a top view; A method for manufacturing a light emitting device, comprising:

10. A step of preparing a substrate including a base material and Cu wiring disposed on an upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of an upper surface of the Cu wiring; a step of forming a first TiW layer and a second TiW layer, the first TiW layer covering the top surface of the Cu wiring, an inner surface of the insulating layer defining the opening, and a part of the top surface of the insulating layer connected to the inner surface, and the second TiW layer being formed on the top surface of the insulating layer at a position spaced apart from the first TiW layer; forming a first Ti layer to cover a top surface of the first TiW layer and an outer surface of the first TiW layer between the top surface of the first TiW layer and the top surface of the insulating layer; forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on the first Ti layer; forming a resist layer on at least a portion of the insulating layer; a step of disposing a light emitting element on the resist layer at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating, and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; Etching the second TiW layer; A method for manufacturing a light emitting device, comprising:

11. A step of preparing a substrate including a base material and Cu wiring disposed on an upper surface side of the base material; forming an insulating layer on the substrate so that an opening is disposed above at least a portion of an upper surface of the Cu wiring; a step of forming a first underlayer and a second underlayer, the step of forming a first underlayer that covers the upper surface of the Cu wiring, an inner surface of the insulating layer that defines the opening, and a part of the upper surface of the insulating layer that is continuous with the inner surface, and forming the second underlayer on the upper surface of the insulating layer at a position spaced apart from the first underlayer; forming a metal layer containing at least one of Au, Pt, Ru, Pd, and Rh on at least the first underlayer; forming a resist layer on at least a portion of the insulating layer; a step of disposing a light emitting element on the resist layer at a position spaced apart from the metal layer; forming a conductive member containing Au on the metal layer by plating, and joining the conductive member to an electrode of the light-emitting element; removing the resist layer; Etching the second underlayer; A method for manufacturing a light emitting device, comprising:

Images