Light-emitting device

Abstract

To provide a display that, in handling a panel with flexibility, reduces breakage of a drive circuit or a connection between circuits.SOLUTION: An element substrate constituting a display has a first area having a display unit, a second area having an external connection electrode, a fourth area having a scan line-side drive circuit, a first side extending along a first direction, and a second side extending along a second direction. The display unit has a transistor and a luminous element. A third area between the first area and the second area is bent, and thus the second area overlaps a portion of the substrate other than the second area.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The technical field of the invention relates to display devices. [Background technology]

[0002] In recent years, with the advancement of digital technology, textual and image information from newspapers, magazines, etc. has been converted into electronic data. This type of electronic data is provided as data. Generally, the content is viewed by displaying it on a display device such as a PC. It has the following characteristics.

[0003] However, the display devices that PCs and other devices have are very different from paper media such as newspapers and magazines. However, there are problems with convenience, such as difficulty in carrying it around.

[0004] On the other hand, to solve the problem of the difference in convenience compared to paper media, flexible electronic media are being developed. Flexible electronic paper has been proposed (see, for example, Patent Document 1). When the display portion is formed using elements such as transistors, the transistors are driven. It is necessary to provide a circuit for the display part of the flexible electronic paper. When forming the electronic paper using the above element, The circuit may be damaged. When using elements such as a driver circuit, the bending of the electronic paper is limited. This is also possible. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-337353 Summary of the Invention [Problem to be solved by the invention]

[0006] In one embodiment of the disclosed invention, when handling a flexible panel, a driving circuit or An object is to provide a display device in which connections between circuits are less likely to break. [Means for solving the problem]

[0007] One embodiment of the disclosed invention is a display device having a bent portion formed by bending an element substrate. A circuit for driving the display device is provided at the bent portion, and wiring is routed from there. By extending the cable, the strength of the part where the circuit for driving the display device is installed is improved, and In addition, at the connection between the external terminal electrode and the external connection wiring (FPC), The element substrate is bent, and the substrate end portion on which the external terminal electrodes are formed is fitted with the external connection wiring. The structure is such that the connectors are fitted together to improve the strength of the connection.

[0008] One embodiment of the disclosed invention is a display device including a flexible element substrate and a display unit provided on the element substrate. and a bent portion provided by bending the element substrate, the bent portion driving the display portion. The display device has a driving circuit for the above.

[0009] One embodiment of the disclosed invention is a semiconductor device including a flexible element substrate, a flexible sealing substrate, and The display device has a display section provided on an element substrate and a bent section provided by bending the element substrate, The bent portion has a drive circuit for driving the display portion, and the element substrate is set so as to protrude from the sealing substrate. It is a display device that is used.

[0010] In one aspect of the disclosed invention, the display device has a support portion for holding the element substrate. The display device may also be a display device that

[0011] In one embodiment of the present invention, the bent portion is bent in a direction perpendicular to the longitudinal axis of the support portion. may be a display device arranged in a horizontal direction.

[0012] In one embodiment of the disclosed present invention, a thin film transistor included in a driver circuit and a display portion includes: It may also be a display device formed on an element substrate.

[0013] In one aspect of the disclosed invention, the element substrate is provided with an outer end portion and a curved portion. The driving circuit may be a display device provided between the outer end and the curved portion.

[0014] In one aspect of the disclosed invention, the element substrate is provided with a curved portion, and a driving circuit may be a display device provided between the display section and the bending section.

[0015] One embodiment of the disclosed invention is a display device including a flexible element substrate and a display unit provided on the element substrate. a support portion for holding the element substrate; and a bent portion provided on the element substrate, the support portion having an inner portion. and a folded portion that is wrapped around the outer periphery of the substrate, the folded portion having an external connection electrode, and the external connection electrode and the external connection wiring The display device is provided by fitting the wire.

[0016] One embodiment of the disclosed invention is a semiconductor device including a flexible element substrate, a flexible sealing substrate, and A display unit provided on the element substrate, a support unit for holding the element substrate, and a folding unit for folding the element substrate. The element substrate has a bent portion that is bent and included in the support portion, and the element substrate protrudes from the sealing substrate. The bent portion has an external connection electrode, and the external connection electrode and the external connection wiring are fitted together. It is a display device that is integrated with the display device.

[0017] In one embodiment of the disclosed invention, the support section includes a drive circuit for driving the display section. The display device may be provided such that the driver circuit is electrically connected to an external connection wiring.

[0018] In one embodiment of the disclosed invention, the display element included in the display portion is an electrophoretic element, a liquid crystal element, or the like. The display device may be a light-emitting element or a display device that is a light-emitting element. [Effects of the Invention]

[0019] According to one aspect of the disclosed invention, the drive circuit or the connection between the circuits is durable and not easily broken. It is possible to provide a display device. [Brief explanation of the drawings]

[0020] [Figure 1] FIG. 1 is a perspective view illustrating one embodiment of the present invention. [Figure 2] FIG. 1 is a perspective view illustrating one embodiment of the present invention. [Figure 3] 1A and 1B are a top view and a cross-sectional view illustrating one embodiment of the present invention. [Figure 4] FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 5] 1A and 1B are a perspective view and a cross-sectional view illustrating one embodiment of the present invention. [Figure 6] 1A and 1B are a perspective view and a cross-sectional view illustrating one embodiment of the present invention. [Figure 7] FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 8] FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 9] FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 10] 1A and 1B are a perspective view and a cross-sectional view illustrating one embodiment of the present invention. [Figure 11]FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 12] FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 13] FIG. 1 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 14] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. [Figure 15] 1A to 1C illustrate electronic devices according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0021] Hereinafter, the embodiments will be described in detail with reference to the drawings. The present invention is not limited to the description of the embodiments, and does not deviate from the spirit of the invention disclosed in this specification. It will be apparent to those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the present invention. The configurations according to the embodiments can be implemented in appropriate combinations. In the configuration of the invention to be described, the same parts or parts having similar functions are designated by the same reference numerals. The repeated explanation will be omitted.

[0022] The size, thickness of layers, and regions of each component shown in the drawings of each embodiment are not clearly indicated. The figures may be exaggerated for clarity. It will not be done.

[0023] In addition, terms such as "first," "second," and "third" used in this specification do not mean a mixture of components. It should be noted that the numbers are added to avoid confusion and are not intended to limit the number.

[0024] (Embodiment 1) The configuration disclosed in this embodiment will be outlined with reference to FIGS.

[0025] The display device shown in this embodiment mode includes a flexible element substrate and a The display unit and one side of the flexible element substrate are held in place (supported in a restrained state so that they do not move). and a bent portion formed by bending the element substrate, and the bent portion has a surface The display device includes a drive circuit for driving the display unit, such as a scanning line drive circuit. The support portion also includes, for example, a signal line side driving circuit that outputs a signal to the signal line. .

[0026] FIG. 1 shows an example of a display device in which a support portion 102 is provided on one side of an element substrate 101. The specific configuration of the display device will be described below with reference to FIG. FIG. 1(A) is a perspective view of the display device with the display unit facing upward, and FIG. 1(B) is a rear view of FIG. 1(A). 1 shows a perspective view from the front side.

[0027] The display device shown in FIGS. 1A and 1B includes an element substrate 101 on which a display portion 103 is provided, A support portion 102 holds one side of the element substrate 101, and a display portion 103 controls the display on the scanning line side. a driver circuit 108 (also called a scanning line driver circuit) for controlling the display of the signal lines of the display unit 103; 1A and 1B, and a driver circuit 106 (also referred to as a signal line driver circuit) for performing the above-described operations. In the figure, a plurality of scanning lines 105 extending from a scanning line side driving circuit 108 and a signal line side driving circuit 10 1(A) and 1(B), a plurality of signal lines 104 extending from the The display device is a flexible display device, and the scanning line side driving circuit 108 is flexible. On a substrate (for example, a plastic substrate), along the scanning line 105 from the display surface side, as shown in FIG. The bent portion 107 is provided on the rear surface side of the However, a sealing substrate is provided on the element substrate 101. By using a substrate having a larger area than the substrate, the bent portion 107 can be formed by the element substrate 101 alone. Therefore, the thickness of the bent portion 107 can be reduced. By using a plate 101 having an area larger than that of the sealing substrate, the bending portion 107 It is possible to improve the ease of bending, etc.

[0028] The scanning line driver circuit 108 may be provided on the surface of the element substrate 101. A plurality of driving circuits 108 may be provided on the element substrate 101. It is preferable that the signal line side is provided inside the circuit block 102. This can reduce damage to the drive circuit 106. The signal line side driving circuit 106 is provided in the hollow portion. In addition, when the support part 102 is provided as a plate-shaped housing, it is possible to The signal line side driver circuit 106 can be provided in this manner (for example, in contact with the housing).

[0029] The support portion 102 is configured to be less likely to bend (higher rigidity) than the element substrate 101. As an example, it is preferable that the housing constituting the support portion 102 is thicker than the element substrate 101. In this case, the display device can be made of a support portion 102. It is possible to configure the bending portion to bend at a portion other than the above.

[0030] The location of the support portion 102 is not particularly limited, but as an example, A support portion 102 can be provided along one side of the support portion 1. For example, as shown in FIGS. As shown in the figure, when the element substrate 101 is rectangular, the element substrate 101 is fixed along a predetermined side (when the side is fixed), The rectangular shape referred to here means a shape with rounded corners. The size or shape of the support part 102 may be There is no particular limitation.

[0031] As shown in FIGS. 1A and 1B, the scanning line side driving circuit 108 is The scanning line 105 is provided at a bent portion 107 which is provided in a direction perpendicular to the scanning line 105. The scanning line side driving circuit 108 provided in the bent portion 107 is connected to the back of the element substrate along the bent portion. The scanning line side driving circuit 108 is configured to extend from the front side to the front side. is provided in the area where the element substrate 101 is bent toward the back side and doubled. This improves the strength of the scanning line side driving circuit 108, making the driving circuit less likely to break. As a result, a robust display device can be obtained. The bent part is a curved part (a rounded curved shape) formed by bending the element substrate. This reduces injuries to the user caused by slipping fingers, etc.

[0032] The bent portion 107 corresponds to a region formed by bending the element substrate 101. In step 07, the element substrate 101 may be bent and the outer end portion may be adhered and fixed to the element substrate 101. Alternatively, it may be configured to be held and fixed by a separate member. The outer end refers to the edge of the substrate.

[0033] The bent portion 107 where the scanning line side driving circuit 108 is provided is provided in the same manner as in FIGS. 1(A) and 1(B). As an example, as shown in FIG. 5A, By bending the substrate to a certain surface side, the scanning line side driving circuit 108 is connected to the substrate at the bending portion 107. In the structure shown in FIG. Therefore, the scanning line side driving circuit 108 can be provided on the side of the scanning line side driving circuit 1. The strength of the 08 can be further improved, making the drive circuit less likely to break, resulting in a durable surface. It can be a display device.

[0034] In the cross section of the bent portion 107 where the scanning line side driving circuit 108 is provided as shown in FIG. 1 and FIG. 5(A), The driver circuit 108 may be provided in the overlapping region due to the bending of the element substrate. As an example, as shown in FIG. 5(B), a curved portion 502 (a substrate is bent at a bending portion) The driving force is applied between the outer edge 503 of the element substrate and the part that has become rounded and curved due to the driving force. In another example, the bending portion 502 and the display portion 504 may be connected to each other. A driver circuit 108 may be provided between them.

[0035] In addition, the scanning line side driving circuit 108 and the pixel circuits constituting each pixel of the display unit 103 are connected to the same program. By forming the light emitting device on a flexible substrate in a recess, costs can be reduced.

[0036] The pixel circuits constituting the display unit 103 and the scanning line side driving circuit 108 include: On the other hand, the signal line side driver circuit 106 and the like can be formed of a high-performance thin film transistor. High-speed circuits are ICs (InP) formed using semiconductor substrates such as silicon or SOI substrates. The IC is formed using a semiconductor integrated circuit (IC), and the IC is placed inside the support portion 102. It can be established.

[0037] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0038] (Embodiment 2) A configuration different from that of the first embodiment will be described with reference to FIGS. 2 to 4. FIG.

[0039] In this embodiment, as shown in FIG. 2, the side opposite to the support portion 102, i.e., the support portion 10 2 shows a display device in which a bent portion 201 is provided in a direction parallel to the long axis direction of the display device 2. In addition, similarly to the above embodiment, the periphery of the flexible element substrate is bent. A curved portion can be formed, and the user's finger or the like can be slid along the edge of the display device. Injuries can be reduced.

[0040] Next, FIG. 3(A) shows a plan view of the display device, and FIG. 3(B) shows a diagram of the display device between A and B in FIG. 3(A). 3(B) shows a cross section, and FIG. 3(C) shows an enlarged view of the cross section of FIG. 3(B).

[0041] In the display device shown in FIG. 3A, the support portion 102 is formed of a housing having a hollow space. The signal line side driver circuit is provided inside the IC303. The IC 303 is formed of a silicon. It can be formed using a semiconductor substrate such as silicon or an SOI substrate. Circuits other than the side driver circuit (for example, a CPU, memory, etc.) can be provided in the IC.

[0042] In addition, in FIG. 3(A), the IC 303 provided inside the support portion 102 is connected to the external connection wiring ( This shows the case where the device is mounted on an FPC (Flexible Printed Circuit). More specifically, an IC 303 that controls the display unit 103 is provided on the external connection wiring 301. The external connection wiring 301 is electrically connected to a printed circuit board 302. The display device and external connection wiring formed by bonding the element substrate 601 and the sealing substrate 603 are An element substrate having an external connection electrode at a connection portion 304 for electrical connection with 301. The external connection electrode 601 and the external connection wiring 301 are connected as shown in FIG. 3(B) and FIG. 3(C). The external connection electrodes and the external connection wiring are electrically connected. Therefore, it is necessary to increase the contact area of ​​the terminal and improve the fixing strength of the connection. This reduces connection failures between terminals and makes it possible to provide a robust display device.

[0043] The element substrate 601 and the sealing substrate 603 are made of flexible materials such as plastic. Examples of flexible substrates include aramid resin and polyethylene naphthalate. (PEN) resin, polyethersulfone (PES) resin, polyphenylene sulfide (PPS) resin, polyimide (PI) resin, etc. can be used. Prepreg, which is a structure impregnated with resin, may also be used.

[0044] The connection between the element substrate 601 and the external connection wiring 301 at the connection portion 304 is the same as that shown in FIG. A space 401 may be provided so that the components fit together with a predetermined gap. By using the configuration A), the movable area of ​​the display device can be widened.

[0045] The connection between the element substrate 601 and the external connection wiring 301 at the connection portion 304 is as shown in FIG. As shown in the figure, the outer end 402 may be provided so as to be in close contact with each other and fitted together. 4(B) enhances the bonding strength between the element substrate 601 and the external connection wiring 301. It is possible.

[0046] The area around the connection between the element substrate 601 and the external connection wiring 301 at the connection portion 304 is shown in FIG. As shown in FIG. 4(C), the gap may be filled with an adhesive member 403. By forming the wiring 301 in this manner, the strength of adhesion between the element substrate 601 and the external connection wiring 301 can be further increased. can be done.

[0047] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0048] (Embodiment 3) In this embodiment mode, structural examples of a display device will be described with reference to perspective views and cross-sectional views.

[0049] As display devices, there are electronic paper devices that use electrophoretic elements as display elements, light-emitting display devices (EL (electroluminescence) panel), liquid crystal display device, etc. can be used. The device is a panel in which a display element is sealed, and a terminal through which a signal is supplied from the outside. A connector, such as an FPC (Flexible Printed Circuit) is attached to the electrode (external terminal electrode). d circuit) or TAB (Tape Automated Bonding ) External connection cables such as tape or TCP (Tape Carrier Package) The wires are attached and electrically connected to the external circuit including the driver circuit. Alternatively, the display device may be directly mounted on the display device using a COG (Chip On Glass) method.

[0050] One embodiment of the display device will be described with reference to perspective views and cross-sectional views shown in FIGS. 6 to 11. First, FIG. 6(A) shows a perspective view of the display device shown in FIG. 1(A). ) shows a cross section taken along the dotted line AB in FIG. 6(A), and the display unit 103 and the folding unit 10 6(A) is the same as FIG. 1(A). The back side of Figure 6(A) is as shown in Figure 1(B), and a detailed explanation is not given here. are omitted.

[0051] FIG. 6B shows an example having a display unit 103 having pixel circuits and a scanning line side driver circuit 108. The display portion 103 and the scanning line side are provided on the element substrate 601 (also referred to as the first substrate). The driver circuit 108 is sealed with a sealing substrate 603 (also referred to as a second substrate) by a sealing material 602. It has been stopped.

[0052] The display unit 103 and the scanning line side driving circuit 108 provided on the element substrate 601 are made of thin film transistors. In FIG. 6B, the display unit 103 includes a thin-film transistor. 604 and a thin film transistor 605 included in the scanning line side driver circuit 108. Insulating layers 606 and 607 are provided on the thin film transistors 604 and 605. An insulating film that functions as a base film may be provided under the thin film transistors 604 and 605 .

[0053] The thin film transistors 604 and 605 are not particularly limited and various thin film transistors can be used. In FIG. 6B, the thin film transistors 604 and 605 are bottom gate This example shows an example of using an inverted staggered thin film transistor with a structure. The channel etch type is shown, but the reverse switch of the channel protection type in which a channel protection film is provided on the semiconductor layer is also shown. A thin film transistor may be used. Conductor materials include silicon, germanium, organic semiconductors, compound semiconductors, and oxide semiconductors. A thin film transistor using an organic semiconductor as the semiconductor material can be used. This makes it strong against bending and impact. In addition to the semiconductor layer, And / or the conductive layer is made of an organic material or a conductive polymer material, It can be made strong against impacts.

[0054] The thin film transistor 604 provided in the display portion 103 is electrically connected to a display element. The display element is not particularly limited as long as it can display, and various display elements can be used. In Figure 6(B), a display method used for electronic paper is Twis This example shows a twist ball method using a twist ball as the display element. The display methods used for electronic paper are electrophoresis, powder system (toner display), Electronic paper is a type of display that is as easy to read as paper. It has the advantage of being able to consume less power and be made thinner and lighter than other display devices. There are.

[0055] The twist ball display method shown in Figure 6(B) uses spherical particles painted in black and white as display elements. The electrode layer is placed between the electrodes used for the device, and the orientation of the spherical particles is controlled by generating a potential difference between the electrode layers. This is a method of displaying by

[0056] A first electrode layer 608 connected to the thin film transistor 604 and a second electrode layer 609 provided on the sealing substrate 603 Between the second electrode layer 609 and the black area 610a and the white area 610b, A spherical particle 612 is provided that includes a cavity 611 that is filled with a body, and the spherical particle The periphery of 612 is filled with a filler 613 such as resin. The second electrode layer 609 corresponds to a counter electrode. The second electrode layer 609 is electrically connected to a common potential line.

[0057] In the cross section of the bent portion 107 where the periphery of the display device is bent as shown in FIGS. 6(A) and 6(B), The curved element substrate 601 is covered from the outside with a bent sealing substrate 603. That is, the curvature of the element substrate 601 is larger than that of the sealing substrate 603. As a result, a curved portion 614 that is rounded and bent can be formed in the sealing substrate 603. This reduces injuries caused by the user's fingers or the like slipping.

[0058] Also, instead of the twist ball, an electrophoretic element can be used as the display element. An example in which an electrophoretic element is used as a display element in the display unit 103 is shown in FIG. 7A, similarly to FIG. 6B, the display unit 103 provided on the element substrate 601 6 shows a cross-sectional view of a device sealed with a sealing substrate 603 by a sealing material 602. Therefore, in FIG. 7(A), the same configuration as in FIG. 6(B) is shown and The display element shown in FIG. 7A is made up of a transparent liquid 701, first particles, and The negatively charged black particles 702a are the first particles, and the positively charged white particles 70 Microcapsules 703 with a diameter of about 10 μm to 200 μm, in which 2b is enclosed, are used.

[0059] The microcapsules 703 provided between the first electrode layer 608 and the second electrode layer 609 are When an electric field is applied by the first electrode layer 608 and the second electrode layer 609, the white particles The black particles 702a and 702b move in opposite directions, allowing the display to be white or black. The display element that applies this principle is the electrophoretic display element. The high display efficiency means no auxiliary light is required, and the low power consumption means the display can be seen even in dimly lit places. Even if power is not supplied to the display unit, It is possible to maintain the displayed image, even if the display device is moved away from the source of radio waves. Even if there is a problem, it is possible to save the displayed image.

[0060] The first particles and the second particles contain a dye and do not move in the absence of an electric field. In addition, the first particles and the second particles are different in color (including colorless).

[0061] The microcapsules 703 dispersed in the solvent 704 are called electronic ink. This electronic ink can be printed on surfaces such as glass, plastic, fabric, and paper. In addition, color display is possible by using color filters or particles with pigments. It is Noh.

[0062] The first particles and the second particles in the microcapsules 703 are made of a conductive material, an insulating material, or the like. materials, semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, A material selected from electrochromic materials, magnetophoretic materials, or a combination of these Just use the materials.

[0063] It is also possible to use electronic powders (registered trademark) as a powder system. An example of using electronic powder is shown in Figure 7(B). Note that Figure 7(B) is similar to Figure 6(B) in that The display unit 103 provided on the element substrate 601 is sealed to the sealing substrate 60 by the sealing material 602. 3. The first electrode layer 608, the second electrode Positively charged black particles 753a are deposited in the space 752 defined by the layer 609 and the ribs 751. and negatively charged white powder 753b. Space 752 is filled with air.

[0064] When an electric field is applied by the first electrode layer 608 and the second electrode layer 609, the black particles 7 53a and the white powder 753b move in opposite directions, allowing the display to be white or black. As the powder, color powder such as red, yellow, or blue may be used.

[0065] In addition, the display element is a light-emitting element (EL element) that uses electroluminescence. The light-emitting element using electroluminescence may be made of an organic compound. Generally, the former are organic EL elements, and the latter are inorganic compounds. are called inorganic EL elements.

[0066] In an organic EL element, electrons and holes are released from a pair of electrodes by applying a voltage to the light-emitting element. are injected into the layers containing the light-emitting organic compounds, causing a current to flow. The recombination of the electrons and holes creates an excited state in the light-emitting organic compound. The excited state is then converted to the ground state, at which point light is emitted. Such a light-emitting element is called a current-excited light-emitting element.

[0067] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements depending on the element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor interaction that utilizes the donor and acceptor levels. Thin-film inorganic EL devices sandwich the light-emitting layer between dielectric layers. Furthermore, this structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. In this example, the light emitting element is an organic EL element. do.

[0068] The light emitting element only needs to have at least one of the pair of electrodes transparent in order to extract light. Then, a thin film transistor and a light emitting element are formed on the substrate, and light is emitted from the surface opposite to the substrate. Top emission, bottom emission, and both the substrate side and the opposite side of the substrate. There are light emitting elements with a double-sided emission structure that emits light from both sides, and light emitting elements with any emission structure can be used. It is possible.

[0069] FIG. 8(A) shows an example in which a light-emitting display device (EL panel) is used as the display device. In A), the display portion 103 provided on the element substrate 601 is covered with a sealing material, as in FIG. 6B. 6 shows a cross-sectional view of the device sealed with a sealing substrate 603 by a sealing substrate 602. The light emitting element 801 is electrically connected to the thin film transistor 604 provided in the display portion 103. The light emitting element 801 is configured by a first electrode layer 608, an electroluminescent layer 80, and a 2, the second electrode layer 803, but is not limited to the configuration shown. The configuration of the light emitting element 801 can be changed appropriately according to the direction of the light extracted from the light emitting element 801. do.

[0070] The partition wall 804 is formed using an organic resin film, an inorganic insulating film, or organic polysiloxane. A photosensitive material is used to form an opening on the first electrode layer 608, and the sidewall of the opening is continuous. It is preferable to form the inclined surface with a continuous curvature.

[0071] The electroluminescent layer 802 may be composed of a single layer or a plurality of layers stacked together. It doesn't matter whether it's

[0072] The second electrode layer 8 is formed so as to prevent oxygen, hydrogen, moisture, carbon dioxide, etc. from entering the light emitting element 801. A protective film may be formed on the barrier 803 and the partition wall 804. The protective film may be a silicon nitride film, a nitride oxide film, or the like. A silicon nitride film, a DLC film, etc. can be formed. The space sealed by the sealing material 602 is sealed with a filler 805. In this way, a protective film (paste) with high airtightness and low outgassing is used to prevent exposure to the outside air. Packaging (enclosure) with a covering material (such as a laminated film or UV-curable resin film) It is preferable that

[0073] Filler 805 can be an inert gas such as nitrogen or argon, or an ultraviolet curing resin or Thermosetting resins can be used, such as PVC (polyvinyl chloride), acrylic, and polyimide. resin, epoxy resin, silicone resin, PVB (Polyvinyl Butyral) or EVA (Ethylene Vinyl For example, nitrogen may be used as a filler.

[0074] If necessary, a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate) may be provided on the light-emitting surface of the light-emitting element. Optical films such as retardation plates (λ / 4 plates, λ / 2 plates) and color filters may be provided as appropriate. In addition, an anti-reflection film may be provided on the polarizing plate or the circular polarizing plate. Anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0075] FIG. 8(B) shows an example in which a liquid crystal display device is used as the display device. As in B), the display unit 103 provided on the element substrate 601 is sealed by the sealing material 602. This shows a cross-sectional view of the device sealed with a sealing substrate 603. The liquid crystal element 851, which is a display element, includes a first electrode layer 608, a second electrode layer 609, and a liquid crystal layer. The liquid crystal layer 852 is sandwiched between insulating films 8 The second electrode layer 609 is provided on the sealing substrate 603 side. The first electrode layer 608 and the second electrode layer 609 are stacked with a liquid crystal layer 852 interposed therebetween. It has become.

[0076] In FIG. 8B, a columnar spacer 85 is obtained by selectively etching the insulating film. 5, and the spacer 855 is used to control the film thickness (cell gap) of the liquid crystal layer 852. A spherical spacer may also be used.

[0077] Although not shown in the liquid crystal display device of FIG. 8(B), a color filter (colored layer), a black Optical components such as matrix (light blocking layer), polarizing components, phase difference components, and anti-reflection components (optical substrates) For example, circularly polarized light may be obtained by using a polarizing substrate and a retardation substrate. In addition, a backlight, a sidelight, or the like may be used as the light source. The use of an EL panel is preferable because it allows for a thinner display.

[0078] Alternatively, a liquid crystal that exhibits a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases. When the temperature of cholesteric liquid crystal is increased, the phase immediately transitions from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range, so the temperature range needs to be improved. In order to achieve this, a liquid crystal composition containing 5% by weight or more of a chiral agent is used for the liquid crystal layer 852. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a response speed of 10 μs to 1 It is optically isotropic, so alignment processing is unnecessary and viewing angle dependency is small. .

[0079] Although FIG. 8B shows an example of a transmissive liquid crystal display device, a semi-transmissive liquid crystal display device can also be used in a reflective liquid crystal display device. It can also be applied to liquid crystal display devices.

[0080] 7(A), (B), 8(A), and 8(B), the element substrate 601, the sealing substrate The plate 603 can be made of a transparent plastic or the like. As for materials, FRP (Fiberglass-Reinforced Plastics) ) board, PVF (polyvinyl fluoride) film, polyester film or acrylic A PVF film or a polycarbonate film can be used instead of aluminum foil. A sheet sandwiched between polyester films can also be used.

[0081] Note that an insulating layer functioning as a protective film may be provided over the thin film transistor 604. The protective film is used to prevent the intrusion of polluting impurities such as organic matter, metals, and water vapor floating in the air. The protective film is preferably a silicon oxide film or a nitride film formed by sputtering. silicon nitride film, silicon oxynitride film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film If the insulating film is formed of a single layer or a stack of aluminum oxynitride films or aluminum nitride oxide films, good.

[0082] The insulating layer 607, which functions as a planarizing insulating film, is made of polyimide, acrylic, benzocyclohexyl, or the like. Heat-resistant organic materials such as thiabutene, polyamide, and epoxy can be used. In addition to the above organic materials, low-k materials, siloxane resins, and PSG are also available. (phosphorus glass), BPSG (borophosphorus glass), etc. can be used. The insulating layer may be formed by stacking a plurality of insulating films made of the above materials.

[0083] The method for forming the insulating layer 607 is not particularly limited, and may be a sputtering method, an SOG method, or the like depending on the material. Spin coating, dip coating, spray coating, droplet ejection method (inkjet method, screen printing printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife A coater or the like can be used. When the insulating layer is formed using a material liquid, it is baked. In this step, the semiconductor layer may be annealed (at 200°C to 400°C) at the same time. By combining the baking process with the annealing of the semiconductor layer, it is possible to efficiently manufacture display devices. become.

[0084] The display device transmits light from a light source or a display element to display an image. All thin films such as the substrate, insulating film, and conductive film provided in the part are resistant to light in the visible light wavelength range. It shall be translucent.

[0085] A first electrode layer and a second electrode layer (a pixel electrode layer, a common electrode layer, a pair of electrodes) that apply a voltage to the display element In the case of a light-emitting diode (also called a counter electrode layer), the direction of the light to be extracted, the location of the electrode layer, and The light transmission property or reflectivity can be selected depending on the pattern structure of the electrode layer.

[0086] The first electrode layer 608 and the second electrode layer 609 are made of indium oxide containing tungsten oxide. , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, Indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), Translucent materials such as indium zinc oxide and indium tin oxide doped with silicon oxide A conductive material can be used.

[0087] The first electrode layer 608 and the second electrode layer 609 are made of tungsten (W) and molybdenum (M o), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb) , Tantalum (Ta), Chromium (Cr), Cobalt (Co), Nickel (Ni), Titanium ( Metals such as Ti), platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag), or It can be formed using one or more of the alloys or metal nitrides. .

[0088] The first electrode layer 608 and the second electrode layer 609 are made of a conductive polymer (conductive polymer The conductive polymer can be formed using a conductive composition containing a conductive polymer. A so-called π-electron conjugated conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or Examples of the copolymer include copolymers of two or more of these.

[0089] In addition, since thin film transistors are easily damaged by static electricity, etc., a protective layer is required to protect the drive circuit. It is preferable to provide a protection circuit. The protection circuit is preferably configured using a nonlinear element. .

[0090] 6(B) shows a cross-sectional structure of a display device different from that shown in FIG. 9. The cross-sectional view between the dotted line AB in (A) shows a cross-sectional structure different from that in FIG. 6(B). 9 is different from FIG. 6(B) in that the cross-sectional structure of the bent portion 107 is different from that of the sealing material 602. a display element sandwiching a first electrode layer 608 and a second electrode layer 609 in the side region; The sealing substrate 603 is not formed in the cross-sectional structure of the bent portion 107, and the sealing layer 9 is formed on the insulating layer 607. In the bent portion 107, the first electrode layer 608 and the second electrode layer 609 that contribute to the display are The electrode layer 609, the sealing substrate 603, etc. can be eliminated, and the bending of the periphery of the display device can be improved. This can improve ease of use.

[0091] Next, regarding the structure of a display device different from that shown in FIGS. 6(A) and 6(B), FIGS. 10(A) and 10(B) are shown. First, FIG. 10A shows a perspective view of the display device shown in FIG. 5A. FIG. 10B shows a cross section taken along the dotted line AB in FIG. 10A. 10A shows the cross-sectional structure of the bent portion 107 and the bent portion 3. This is the same as FIG. 10(A), and detailed explanations will be omitted here. The configuration of the display unit 103 is the same as that of the display unit 103 in FIG. 6(B). Further, the configuration of the bent portion 107 in FIG. The difference from the bent portion 107 of FIG. 6(B) is that the bent sealing substrate 603 is The difference is that the device is covered from the outside with a sub-board 601. The other components are the same as those shown in FIG. This is the same as (B), and detailed explanation will be omitted here.

[0092] In the cross section of the bent portion 107 where the periphery of the display device is bent as shown in FIGS. 10(A) and 10(B), The bent sealing substrate 603 is covered from the outside by the bent element substrate 601. That is, the curvature of the sealing substrate 603 is larger than that of the element substrate 601. As a result, a curved portion 614 that is bent in a rounded shape can be formed on the element substrate 601. This reduces injuries caused by the user's fingers slipping.

[0093] In addition, in FIG. 10(B), similarly to FIG. 7(A), FIG. 7(B), FIG. 8(A), and FIG. 8(B), Electrophoretic device using microcapsules as a display element instead of twist balls It is also possible to use a powder-based electrophoretic element, a light-emitting element, or a liquid crystal element.

[0094] A cross-sectional structure of a display device different from that shown in FIG. 10(B) is shown in FIG. 11. The cross-sectional view between the dotted line AB in Figure 10(A) shows a cross-sectional structure different from that in Figure 10(B). The difference between FIG. 11 and FIG. 10(B) is that the cross-sectional structure of the bent portion 107 is The first electrode layer 608 and the second electrode layer 609 are sandwiched between the inner region of the insulating material 602. The display element and the sealing substrate 603 are not formed in the cross-sectional structure of the bent portion 107, and the insulating layer 60 9, the bent portion 107 is formed by covering the upper surface of the display panel 6 with a sealing layer 901. Therefore, the first electrode layer 608, the second electrode layer 609, the sealing substrate 603, and the like can be eliminated. This can improve the ease of folding the periphery of the display device.

[0095] Next, regarding the structure of a display device different from those shown in FIGS. 6(A), (B), 10(A), and (B), 12(A) and (B). First, in FIG. 12(A), the display device shown in FIG. 4(C) FIG. 12(B) shows the cross-sectional view of FIG. 12(A) in detail. Specifically, the cross-sectional structure of the display unit 103 and the bent portion 1201 is shown. 2(A) is the same as FIG. 4(C), and detailed explanation is omitted here. The configuration of the display unit 103 in FIG. 12(B) is the same as that in FIG. 6(B) and FIG. 10(B). This is the same diagram as the display unit 103, and detailed description thereof will be omitted here.

[0096] The configuration of the bent portion 1201 in Fig. 12(B) will be described. The element substrate 601 extends from the display unit 103 and is bent to fit into the element substrate 601. The external connection wiring 1202 provided in this way, the first electrode functioning as a pixel electrode of the display unit 103, The external connection electrode 1203 and the source electrode of the thin film transistor 604 are formed at the same time as the layer 608. The terminal electrode 1204 is formed from the same conductive layer as the electrode layer and the drain electrode layer, and the anisotropic conductive film 12 12B, the external connection electrodes 1203, the terminals 1205, and the like are provided on the element substrate 601. In addition to the terminal electrode 1204, a gate insulating film of the thin film transistor 604 and an interlayer insulating layer are formed. The external connection electrode 1203 is connected to the external connection wiring 12 12. The terminals of the first and second electrodes 1202 are electrically connected to the terminals of the first and second electrodes 1202 via an anisotropic conductive film 1205.

[0097] The external connection wiring 1202 is formed by a single crystal semiconductor film or a polycrystalline semiconductor film. The IC is mounted on a substrate that is designed for this purpose. The connection method via the external connection wiring 1202 is not particularly limited, and may be a COG method, a wire method, or the like. The ear bonding method, the TAB method, or the like can be used.

[0098] In the cross section of the bent portion 1201 where the display device is bent as shown in FIG. 12(B), the element substrate 601 and The external connection wiring 1202 is configured to fit together. The contact area between the plate 601 and the external connection wiring 1202 can be increased, and the fixing strength can be increased. It is possible.

[0099] 12(B), the display unit 103 of FIG. 12(B) can display the images shown in FIGS. 7(A), 7(B), 8(A), and 8(B). As in B), microcapsules are used instead of twist balls as display elements. It is also possible to use electrophoretic elements, powder-based electrophoretic elements, light-emitting elements, and liquid crystal elements. is.

[0100] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0101] (Fourth embodiment) In this embodiment, examples of transistors included in a display device will be described using FIGS. 13A to 13D show the thin film transistor 60 according to the third embodiment. 4 is an example of a thin film transistor that can be used in

[0102] In FIGS. 13A to 13D, an insulating film 1301 is formed on an element substrate 601. A thin film transistor 604 is provided on the film 1301. An insulating layer 1302 and an insulating layer 607 are formed, and electrically connected to the thin film transistor 604. A first electrode layer 608 is provided.

[0103] The thin film transistor 604 shown in FIG. 13A has a source electrode layer and a drain electrode layer. The wiring layers 1303a and 1303b and the semiconductor layer 1304 functioning as a + Connected without a layer This is the configuration.

[0104] The thin film transistor 604 shown in FIG. 13(B) is a bottom gate thin film transistor. The element substrate 601 is a substrate having an insulating surface, and a gate electrode layer is formed on the insulating film 1301. 1305, a gate insulating layer 1307, a semiconductor layer 1304, a source region or a drain region It works like this + Layers 1306a and 1306b function as source and drain electrode layers. The wiring layers 1303a and 1303b are connected to the wiring layers 1303a and 1303b. + Layers 1306a and 1306b are semiconductor layers It is a semiconductor layer with lower resistance than 1304.

[0105] In addition, n + The layers 1306a and 1306b are connected to the gate insulating layer 1307 and the wiring layers 1303a and 1303b. 303b. + The layer is between the gate insulating layer and the wiring layer. Alternatively, the insulating film may be provided between both the wiring layer and the semiconductor layer.

[0106] The thin film transistor 604 shown in FIG. 13C is a bottom gate thin film transistor. In the thin film transistor 604, the source electrode layer, the drain electrode layer, and the semiconductor layer Toga, n + The structure is such that the two contact each other without any intervening layer.

[0107] The thin film transistor 604 shown in FIG. 13C is a thin film transistor shown in FIG. The gate insulating layer 1307 is present in the entire region including the transistor 604. A gate electrode layer 1305 is provided between the element substrate 601 and the insulating surface of the element substrate 601. Wiring layers 1303a and 1303b are provided on the gate insulating layer 1307. Then, a semiconductor layer 1304 is formed on the gate insulating layer 1307 and the wiring layers 1303a and 1303b. Although not shown, a wiring layer 1303a is provided on the gate insulating layer 1307. 1303b, and a wiring layer is provided in addition to the semiconductor layer 1303b. The wiring layer extends outward from the outer periphery of the semiconductor layer 1304. It exists.

[0108] The thin film transistor 604 shown in FIG. 13(D) is a top-gate thin film transistor. The element substrate 601 is a substrate having an insulating surface, and the insulating film 1301 is provided on the element substrate 601. or n which acts as a drain region + Semiconductor layer 1304 including layers 1306a and 1306b A gate insulating layer 1307 is formed on the semiconductor layer 1304, and a gate insulating layer 1308 is formed on the gate insulating layer 1307. A gate electrode layer 1305 is formed. + The layers 1306a and 1306b are in contact with each other. Wiring layers 1303a and 1303b functioning as a source electrode layer and a drain electrode layer are formed. There is. + The layers 1306a and 1306b are semiconductor regions having a lower resistance than the semiconductor layer 1304. do.

[0109] In this embodiment, a single gate structure has been described, but a multi-gate structure such as a double gate structure may also be used. In this case, a gate electrode layer may be provided above and below the semiconductor layer. Alternatively, a structure in which a plurality of gate electrode layers are provided on only one side (upper or lower) of the semiconductor layer may be used.

[0110] The semiconductor material used for the semiconductor layer is not particularly limited. Examples of materials that can be used are described below.

[0111] The semiconductor layers of semiconductor elements are made of semiconductor materials such as silane and germane. Amorphous (hereinafter referred to as amorphous) is a material produced by vapor deposition or sputtering using a source gas. (Also called "AS") semiconductor, the amorphous semiconductor is Crystallized polycrystalline semiconductor or microcrystalline (semi-amorphous or microcrystalline) Also called "SAS" hereafter.) Semiconductors, etc. can be used. The layer can be deposited by sputtering, LPCVD, or plasma CVD. .

[0112] Considering the Gibbs free energy, the microcrystalline semiconductor film is a quasi-stable film intermediate between amorphous and single crystal. In other words, the third state is a stable state in terms of free energy. It is a conductor with short-range order and lattice distortion. Columnar or needle-like crystals are formed on the substrate surface. Microcrystalline silicon, a typical example of a microcrystalline semiconductor, grows in the normal direction. The 520 cm spectrum indicates single-crystal silicon. -1 It is shifted to the lower wavenumber side than That is, 520 cm, which indicates single crystal silicon. -1 and 480 cm, which indicates amorphous silicon -1 The Raman spectrum of microcrystalline silicon has a peak between these two. At least 1 atomic % or more of hydrogen or halogen is used to terminate the ring bond. It also contains rare gas elements such as helium, argon, krypton, and neon. By further promoting lattice distortion through the annealing, stability is increased and a good microcrystalline semiconductor film can be obtained. do.

[0113] This microcrystalline semiconductor film is formed by a high-frequency plasma CVD method with a frequency of several tens to several hundreds of MHz, or Alternatively, it can be formed by a microwave plasma CVD device with a frequency of 1 GHz or more. Typically, silicon hydrides such as SiH4, Si2H6, SiH2Cl2, and SiHCl3 It can be formed by diluting silicon halides such as SiCl4 and SiF4 with hydrogen. In addition to silicon hydride and hydrogen, helium, argon, krypton, and neon can be selected. A microcrystalline semiconductor film can be formed by diluting the semiconductor with one or more rare gas elements. In these cases, the flow rate ratio of hydrogen to silicon hydride is set to 5 times or more and 200 times or less, preferably The ratio is 50 to 150 times, and more preferably 100 times.

[0114] Representative amorphous semiconductors include hydrogenated amorphous silicon and crystalline semiconductors. A typical example is polysilicon. Polysilicon (polycrystalline silicon) has the following features: , which uses polysilicon as the main material and is formed through a process temperature of 800°C or higher. The main materials are high-temperature polysilicon and polysilicon formed at process temperatures below 600°C. The so-called low-temperature polysilicon is used as a material for the crystallization of amorphous silicon. It contains polysilicon, which is made by crystallizing silicon. Of course, as mentioned above, A semiconductor or a semiconductor layer containing a crystalline phase in part can also be used.

[0115] In addition to elements such as silicon (Si) and germanium (Ge), semiconductor materials include Compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, and SiGe are also used. You can be there.

[0116] When a crystalline semiconductor layer is used as the semiconductor layer, the crystalline semiconductor film can be manufactured by various methods. Methods (laser crystallization, thermal crystallization, or using elements that promote crystallization such as nickel) In addition, the SAS microcrystalline semiconductor can be irradiated with laser to form a crystal. If no element that promotes crystallization is introduced, the material will be amorphous. Before irradiating the silicon film with laser light, it was heated at 500°C for 1 hour in a nitrogen atmosphere. The hydrogen concentration of the amorphous silicon film is 1×10 20 atoms / cm 3 Release to the following: This is because when a laser beam is irradiated onto an amorphous silicon film containing a large amount of hydrogen, the amorphous silicon film is destroyed. Because it will be put away.

[0117] As a method for introducing a metal element into an amorphous semiconductor layer, the metal element is introduced onto the surface of the amorphous semiconductor film. There are no particular limitations on the method as long as it can be used to make the surface or interior thereof. For example, sputtering, CVD, etc. method, plasma treatment method (including plasma CVD method), adsorption method, method of applying a metal salt solution Among these, the method using a solution is simple and easy to use, and the concentration of the metal element can be adjusted. In addition, the wettability of the surface of the amorphous semiconductor film is improved. In order to spread the aqueous solution over the entire surface of the amorphous semiconductor film, UV light was used in an oxygen atmosphere. irradiation, thermal oxidation, treatment with ozone water containing hydroxyl radicals or hydrogen peroxide, etc. Therefore, it is desirable to form an oxide film.

[0118] In addition, in the crystallization process of crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, The element that promotes crystallization (also referred to as a catalytic element or metal element) is added to the film, and the film is heat-treated (550 Crystallization may be carried out by heating at 500°C to 750°C for 3 minutes to 24 hours. The elements that can be used include iron (Fe), nickel (Ni), cobalt (Co), and ruthenium (Ru ), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) , platinum (Pt), copper (Cu) and gold (Au) can be done.

[0119] In order to remove or reduce the elements that promote crystallization from the crystalline semiconductor film, A semiconductor film containing an impurity element is formed in contact with the substrate, and functions as a gettering sink. As for pure elements, impurity elements that give n-type conductivity, impurity elements that give p-type conductivity, and rare gas elements For example, phosphorus (P), nitrogen (N), arsenic (As), antimony ( Sb), Bismuth (Bi), Boron (B), Helium (He), Neon (Ne), Argon One or more selected from Ar (Ar), Kr (krypton), and Xe (xenon) are used. A crystalline semiconductor film containing an element that promotes crystallization can be formed by adding a semiconductor containing a rare gas element. A conductive film is formed and heat treated (at 550°C to 750°C for 3 minutes to 24 hours). The elements contained in the film that promote crystallization move into the semiconductor film containing the rare gas element, and the crystallization The elements that promote crystallization in the semiconductor film are removed or reduced. The semiconductor film containing the rare gas element that has become a mask is then removed.

[0120] The crystallization of the amorphous semiconductor film may be performed by combining a heat treatment and crystallization by laser light irradiation. The heat treatment or the laser light irradiation may be performed individually or multiple times.

[0121] Alternatively, the crystalline semiconductor film may be formed directly on the substrate by a plasma method. A crystalline semiconductor film may be selectively formed on a substrate by using a method.

[0122] The semiconductor layer may also be made of an oxide semiconductor, such as zinc oxide (ZnO) or tin oxide. (SnO2) can also be used. When ZnO is used for the semiconductor layer, the gate insulating layer Y2O3, Al2O3, TiO2, or a laminate of these materials is used to form the gate electrode layer, source electrode layer, and The electrode layer and the drain electrode layer may be made of ITO, Au, Ti, or the like. In, Ga, etc. can also be added to ZnO.

[0123] InMO3(ZnO) as an oxide semiconductor m A thin film expressed as (m>0) can be used. M can be gallium (Ga), iron (Fe), nickel (Ni), manganese (M n) and cobalt (Co). M can be Ga, or it can be any of the above other than Ga, such as Ga and Ni or Ga and Fe. In some cases, a metal element is contained. In addition, in the above oxide semiconductor, the metal contained as M is In addition to the transition metal elements, Fe, Ni and other transition metal elements, or the oxides of these transition metals, may be present as impurity elements. For example, the oxide semiconductor layer is made of In-Ga-Zn-O. Non-single crystalline films can be used.

[0124] Oxide semiconductor layer (InMO3(ZnO) m (m>0) film) as In-Ga-Zn-O system Instead of a non-single crystal film, InMO3(ZnO) where M is another metal element m (m>0) membrane In addition to the above, In may be used as an oxide semiconductor for the oxide semiconductor layer. -Sn-Zn-O system, In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga- Zn-O series, Sn-Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Z nO-based, In-O-based, Sn-O-based, Zn-O-based, and In-Ga-O-based oxide semiconductors are used. It can be used.

[0125] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0126] (Embodiment 5) In this embodiment mode, specific examples of application modes of the display device described in the above embodiment mode will be shown. explain.

[0127] FIG. 14A shows a portable information terminal, which includes a main body 3001, display units 3002 and 3003, a storage medium The display device described in the above embodiment includes a flexible The present invention can be applied to a display device having a display unit 3003 formed on a conductive substrate. The shape of the device can be freely designed, so it is possible to create a mobile information terminal of the desired shape. In addition, the display device described in the above embodiment can be realized by using a driver circuit or a connection portion between circuits. This makes it possible to provide a durable display device that is less likely to break.

[0128] FIG. 14B shows an example of an electronic book equipped with the display device described in the above embodiment. The first housing 3101 has a first display unit 3102, and the first housing 3101 has an operation button 310. 3, the second housing 3104 has a second display unit 3105, and the first housing 3101 and The first and second housings 3104 can be opened and closed by means of a support portion 3106. Such a configuration allows the book to operate like a paper book, and in addition, By applying the display device described above to the first display portion 3102 and the second display portion 3105, This makes it possible to provide a durable e-book reader by making the drive circuit and the connections between circuits less susceptible to breakage. do.

[0129] FIG. 15(A) shows a display device 1502 for advertising inside a vehicle such as a train 1501. When advertising media is printed paper, the advertisements are exchanged manually. By using a display device that displays using display elements, advertisements can be displayed in a short time without requiring much manpower. In addition, the display can be changed to a stable image without any distortion. By applying the display device described in the embodiment to the display device 1502, It is possible to provide a display device for advertising purposes that is durable and has connection sections between roads that are not easily broken.

[0130] 15(B) shows a display device 1511 for outdoor advertising. The display device 1511 made using the substrate is swung to use as an advertising medium for the display part 1512. The advertisements are exchanged manually, but the display element By using a display device that displays advertisements in a different format, it is possible to change the display of advertisements in a short time. In addition, a stable image can be obtained without being distorted even when the display device described in the above embodiment is used. By applying this to part 1512, the drive circuit or the connection between circuits becomes hard to break, and a durable wide Advertising media can be provided.

[0131] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is. [Explanation of symbols]

[0132] 101 Element substrate 102 Support part 103 Display section 104 Signal Line 105 scan lines 106 Drive circuit 106 Drive circuit 107 Bend section 108 Drive Circuit 201 Bend section 301 External connection wiring 302 Printed Circuit Board 303 IC 304 Connection 401 Space 402 Outer end 403 Adhesive materials 500 under nitrogen atmosphere 501 Element substrate 502 curved section 503 Outer end 504 Display section 601 Element substrate 602 Sealing material 603 Sealing substrate 604 Thin Film Transistor 605 Thin-film transistor 606 Insulation Layer 607 Insulation Layer 608 Electrode layer 609 Electrode layer 610a black area 610b White area 611 Cavity 612 Spherical particles 613 Filling material 614 Curved section 701 Liquid 702a Fine particles 702b Fine particles 703 Microcapsules 704 Solvent 751 Ribs 752 Space 753a Powder 753b Powder 801 Light-emitting element 802 Electroluminescent layer 803 Electrode layer 804 Bulkhead 805 Filling material 851 Liquid crystal element 852 Liquid crystal layer 853 insulating film 854 insulating film 855 Spacer 901 Sealing layer 1201 Bend section 1202 External connection wiring 1203 External connection electrode 1204 Terminal electrode 1205 Anisotropic conductive film 1301 insulating film 1302 Insulation layer 1303a wiring layer 1304 Semiconductor layer 1305 gate electrode layer 1306a n+ layer 1307 Gate insulating layer 1501 Train 1502 Display device 1511 Display device 1512 Display section 3001 main unit 3002 Display section 3003 Display section 3004 Storage medium 3005 Operation switch 3101 Housing 3102 Display section 3103 Operation button 3104 Housing 3105 Display section 3106 Support part 4311 Display device

Claims

[Claim 1] a flexible element substrate; a display unit provided on the element substrate; a first drive circuit and a second drive circuit provided on the element substrate; the display unit has a light-emitting element, the display unit is located between the first drive circuit and the second drive circuit, the element substrate has a first curved portion between one side and the display unit and a second curved portion between another side and the display unit; the first drive circuit is located between the one side and the display unit, The second driving circuit is located between the other side and the display unit.

Images