Substrate processing apparatus and substrate processing method

Abstract

To describe a substrate processing apparatus and a substrate processing method, capable of adjusting a liquid amount of a liquid film formed on a front surface of a substrate with high accuracy.SOLUTION: A substrate processing apparatus comprises: a liquid processing part that is configured to supply a processing liquid while rotating a substrate to form a liquid film on a front surface of the substrate; a measurement part that is configured to measure a temperature of the processing liquid supplied to the substrate; a dry processing part that is configured to dry the substrate on which the liquid film is formed; and a control part. The control part is configured to execute a first processing of calculating a prediction liquid amount of the liquid film formed on the front surface of the substrate, a second processing of setting a processing condition of the liquid film formed on the front surface of the substrate to reach the prediction liquid amount calculated in the first processing, and a third processing of forming the liquid film on the front surface of the substrate in the liquid processing part on the basis of the processing condition set in the second processing, on the basis of a liquid film model expressing a relation between the temperature of the processing liquid supplied to the substrate and the liquid amount of the liquid film formed on the front surface of the substrate, and the temperature measured by the measurement part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] A method for manufacturing a semiconductor device includes, for example, microfabrication of a substrate (e.g., a semiconductor wafer) to form a laminated structure of integrated circuits on the surface of the substrate. Microfabrication of the substrate includes supplying a processing liquid to the substrate to clean and dry the substrate in order to remove minute particles and native oxide films on the surface of the substrate. Patent Document 1 discloses, as an example of a substrate drying process, a method for drying a substrate using a supercritical fluid. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-033246 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure describes a substrate processing apparatus and a substrate processing method that are capable of accurately adjusting the amount of liquid in a liquid film formed on the surface of a substrate. [Means for solving the problem]

[0005] An example of a substrate processing apparatus includes a liquid processing section configured to supply a processing liquid to a surface of the substrate while rotating the substrate to form a liquid film on the surface of the substrate, a measurement section configured to measure the temperature of the processing liquid supplied to the substrate, a drying processing section configured to dry the substrate on which the liquid film has been formed, and a control section. The control section is configured to execute a first process of calculating an estimated liquid volume of the liquid film to be formed on the surface of the substrate based on a liquid film model that represents the relationship between the temperature of the processing liquid supplied to the substrate and the liquid volume of the liquid film formed on the surface of the substrate and the temperature measured by the measurement section, a second process of setting process conditions that result in the estimated liquid volume calculated in the first process, and a third process of forming a liquid film on the surface of the substrate in the liquid processing section based on the process conditions set in the second process. [Effects of the Invention]

[0006] According to the substrate processing apparatus and substrate processing method of the present disclosure, it is possible to precisely adjust the amount of liquid in the liquid film formed on the surface of the substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view schematically illustrating an example of a substrate processing system. [Figure 2] FIG. 2 is a side view schematically showing the inside of the substrate processing system of FIG. [Figure 3] FIG. 3 is a side view schematically illustrating an example of the liquid processing unit. [Figure 4] FIG. 4 is a perspective view schematically illustrating an example of the drying processing unit. [Figure 5] FIG. 5 is a block diagram showing an example of a main part of a substrate processing system. [Figure 6] FIG. 6 is a schematic diagram illustrating an example of a hardware configuration of the controller. [Figure 7] FIG. 7 is a flowchart illustrating the procedure for generating a model. [Figure 8]FIG. 8 is a graph showing an example of the change over time in the rotation speed of the substrate and the supply flow rate of the processing liquid when a liquid film is formed on the surface of the substrate. [Figure 9] FIG. 9(a) is a graph showing an example of a liquid film model, and FIG. 10(b) is a graph showing an example of a processing condition model. [Figure 10] FIG. 10 is a flowchart illustrating a substrate processing procedure. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the following description, the same elements or elements having the same functions will be designated by the same reference numerals, and redundant explanations will be omitted. Note that in this specification, when referring to the top, bottom, right, and left of a figure, the directions of the reference numerals in the figure will be used as the reference.

[0009] [Substrate processing system] 1 and 2, a substrate processing system 1 (substrate processing apparatus) configured to process a substrate W will be described. The substrate processing system 1 includes a loading / unloading station 2, a processing station 3, and a controller Ctr (controller). The loading / unloading station 2 and the processing station 3 may be aligned in a horizontal line, for example.

[0010] The substrate W may be disk-shaped or may be a non-circular plate-shaped such as a polygon. The substrate W may have a cutout portion cut out of a portion. The cutout portion may be, for example, a notch (a U-shaped, V-shaped groove, or the like) or a linear portion extending linearly (so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or any other type of substrate. The diameter of the substrate W may be, for example, approximately 200 mm to 450 mm.

[0011] The loading / unloading station 2 includes a mounting section 4, a loading / unloading section 5, and a shelf unit 6. The mounting section 4 includes a plurality of mounting tables (not shown) arranged in the width direction (the vertical direction in FIG. 1). Each mounting table is configured to be able to mount a carrier 7 (storage container). The carrier 7 is configured to store at least one substrate W in a sealed state. The carrier 7 includes an opening / closing door (not shown) for loading and unloading the substrate W.

[0012] The loading / unloading section 5 is disposed adjacent to the mounting section 4 in the direction in which the loading / unloading stations 2 and the processing stations 3 are lined up (the left-right direction in FIG. 1). The loading / unloading section 5 includes an opening / closing door (not shown) provided for the mounting section 4. When the carrier 7 is placed on the mounting section 4, the opening / closing door of the carrier 7 and the opening / closing door of the loading / unloading section 5 are both opened, thereby connecting the inside of the loading / unloading section 5 and the inside of the carrier 7.

[0013] The loading / unloading section 5 incorporates a transport arm A1 and a shelf unit 6. The transport arm A1 is configured to be able to move horizontally in the width direction of the loading / unloading section 5 (the vertical direction in FIG. 1), move up and down in the vertical direction, and pivot about a vertical axis. The transport arm A1 is configured to take out a substrate W from a carrier 7 and pass it to the shelf unit 6, and also to receive a substrate W from the shelf unit 6 and return it to the carrier 7. The shelf unit 6 is located near the processing station 3, and is configured to act as an intermediary for the transfer of substrates W between the loading / unloading section 5 and the processing station 3.

[0014] The processing station 3 includes a transfer section 8 and a plurality of substrate processing units U (substrate processing apparatuses). The transfer section 8 extends horizontally, for example, in the direction in which the loading / unloading station 2 and the processing stations 3 are lined up (the left-right direction in FIG. 1). The transfer section 8 incorporates a transfer arm A2. The transfer arm A2 is configured to be able to move horizontally in the longitudinal direction of the transfer section 8 (the left-right direction in FIG. 1), move up and down in the vertical direction, and pivot about a vertical axis. The transfer arm A2 is configured to take out a substrate W from the shelf unit 6 and pass it to the substrate processing unit U, and to receive a substrate W from the substrate processing unit U and return it to the shelf unit 6.

[0015] 1 and 2, the plurality of substrate processing units U include a plurality (e.g., three) of substrate processing units U aligned vertically on one side of the transport section 8, and a plurality (e.g., three) of substrate processing units U aligned vertically on the other side of the transport section 8. The substrate processing units U include a liquid processing unit U1 and a drying processing unit U2. In the example shown in FIGS. 1 and 2, the liquid processing unit U1 and the drying processing unit U2 are arranged adjacent to each other along the longitudinal direction of the transport section 8 (the left-right direction in FIG. 1).

[0016] [Liquid processing unit] Next, the liquid processing unit U1 will be described in detail with reference to Figures 1 to 3. As illustrated in Figures 1 and 2, the liquid processing unit U1 includes a metering section U11, a liquid processing section U12, and a measurement section U13.

[0017] The weighing unit U11 is configured to measure the weight of the substrate W carried into the liquid processing unit U1. The weighing unit U11 is configured to transmit data of the measured weight to the controller Ctr.

[0018] The liquid processing unit U12 is configured to perform a predetermined liquid processing on the substrate W. The predetermined liquid processing includes, for example, a cleaning processing of the substrate W and a processing for forming a liquid film R (see FIG. 3) on the surface Wa (see FIG. 3) of the substrate W. The liquid processing unit U12 may be, for example, a single-wafer cleaning apparatus that cleans the substrates W one by one by spin cleaning. As illustrated in FIG. 3, the liquid processing unit U12 includes a spin holder 10, a cleaning liquid supply unit 20, a rinse liquid supply unit 30, and a processing liquid supply unit 40.

[0019] The rotating and holding unit 10 includes a rotating unit 11, a shaft 12, and a holding unit 13. The rotating unit 11 is configured to operate based on an operation signal from the controller Ctr and rotate the shaft 12. The rotating unit 11 may be a power source such as an electric motor.

[0020] The holder 13 is provided at the tip of the shaft 12. The holder 13 is configured to hold the back surface of the substrate W by suction, for example, by suction. That is, the spin holder 10 may be configured to rotate the substrate W around a central axis (rotation axis) perpendicular to the front surface Wa of the substrate W while the substrate W is in a substantially horizontal position. As illustrated in FIG. 3, the spin holder 10 may rotate the substrate W clockwise when viewed from above.

[0021] The cleaning liquid supply unit 20 is configured to supply a cleaning liquid L1 to the substrate W. The cleaning liquid L1 may be, for example, a chemical liquid for removing a thin film (e.g., a natural oxide film such as a silicon oxide film) from the surface Wa of the substrate W, or a chemical liquid for removing foreign matter (e.g., particles, organic matter, etc.) adhering to the surface Wa of the substrate W. The chemical liquid may contain an acidic or alkaline chemical liquid. The acidic chemical liquid may contain, for example, an SC-2 liquid (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), an SPM (a mixture of sulfuric acid and hydrogen peroxide), an HF liquid (hydrofluoric acid), a DHF liquid (dilute hydrofluoric acid), or an HNO3+HF liquid (a mixture of nitric acid and hydrofluoric acid). The alkaline chemical liquid may contain, for example, an SC-1 liquid (a mixture of ammonia, hydrogen peroxide, and pure water), or hydrogen peroxide. The temperature of the cleaning liquid L1 can be set to various values ​​depending on the cleaning conditions of the substrate W, but may be, for example, about 20°C to 160°C.

[0022] The cleaning liquid supply unit 20 includes a liquid source 21, a pump 22, a valve 23, a nozzle 24, a pipe 25, and a drive source 26. The liquid source 21 is a supply source of the cleaning liquid L1. As illustrated in FIGS. 1 and 2, the liquid source 21 may be disposed inside the loading / unloading unit 5. Returning to FIG. 3, the pump 22 is configured to operate based on an operation signal from the controller Ctr, and to pump the cleaning liquid L1 sucked from the liquid source 21 to the nozzle 24 via the pipe 25 and the valve 23.

[0023] The valve 23 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the fluid to flow through the pipe 25 and a closed state that prevents the fluid from flowing through the pipe 25. The nozzle 24 is disposed above the substrate W so that the outlet faces the front surface Wa of the substrate W. The nozzle 24 is configured to discharge the cleaning liquid L1 fed from the pump 22 from the outlet.

[0024] Pipe 25 connects, in order from the upstream side, liquid source 21, pump 22, valve 23, and nozzle 24. As illustrated in Figures 1 and 2, pipe 25 may extend while branching midway so as to connect liquid source 21 in load / unload section 5 with each nozzle 24 in liquid processing section U12 of multiple liquid processing units U1.

[0025] 3, the drive source 26 is directly or indirectly connected to the nozzle 24. The drive source 26 is configured to operate based on an operation signal from the controller Ctr, and to move the nozzle 24 above the substrate W in the horizontal or vertical direction.

[0026] The rinse liquid supply unit 30 is configured to supply a rinse liquid L2 to the substrate W. The rinse liquid L2 may be, for example, a liquid for removing (rinsing away) the cleaning liquid L1 supplied to the surface Wa of the substrate W and components dissolved in a film by the cleaning liquid L1 from the surface Wa. The rinse liquid L2 may contain, for example, deionized water (DIW), ozone water, carbonated water (CO2 water), ammonia water, or the like.

[0027] The rinse liquid supply unit 30 includes a liquid source 31, a pump 32, a valve 33, a nozzle 34, a pipe 35, and a drive source 36. The liquid source 31 is a supply source of the rinse liquid L2. Although not shown, the liquid source 31 may be disposed inside the load / unload unit 5. The pump 32 operates based on an operation signal from the controller Ctr, and is configured to pump the rinse liquid L2 sucked from the liquid source 31 to the nozzle 34 via the pipe 35 and the valve 33.

[0028] The valve 33 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the fluid to flow through the pipe 35 and a closed state that prevents the fluid from flowing through the pipe 35. The nozzle 34 is disposed above the substrate W so that its outlet faces the front surface Wa of the substrate W. The nozzle 34 is configured to discharge the rinsing liquid L2 fed from the pump 32 from the outlet.

[0029] Pipe 35 connects, in order from the upstream side, liquid source 31, pump 32, valve 33, and nozzle 34. Although not shown, pipe 35 may extend while branching midway so as to connect liquid source 31 in load / unload section 5 with each nozzle 34 in liquid processing section U12 of the plurality of liquid processing units U1.

[0030] The drive source 36 is directly or indirectly connected to the nozzle 34. The drive source 36 is configured to operate based on an operation signal from the controller Ctr, and to move the nozzle 34 above the substrate W in the horizontal or vertical direction.

[0031] The processing liquid supply unit 40 is configured to supply a processing liquid L3 to the substrate W. The processing liquid L3 is, for example, a liquid for removing (rinsing away) the rinsing liquid L2 supplied to the surface Wa of the substrate W from the surface Wa. When the rinsing liquid L2 is replaced with the processing liquid L3, a liquid film R of the processing liquid L3 is formed on the surface Wa of the substrate W. The processing liquid L3 may contain, for example, IPA (isopropyl alcohol).

[0032] The processing liquid supply unit 40 includes a liquid source 41, a pump 42, a valve 43, a nozzle 44 (discharge nozzle), a pipe 45 (supply line), and a drive source 36. The liquid source 41 is a supply source of the processing liquid L3. As illustrated in FIGS. 1 and 2, the liquid source 41 may be disposed inside the load / unload unit 5. Returning to FIG. 3, the pump 42 is configured to operate based on an operation signal from the controller Ctr, and to pump the processing liquid L3 sucked from the liquid source 41 to the nozzle 44 via the pipe 45 and the valve 43.

[0033] The valve 43 operates based on an operation signal from the controller Ctr, and is configured to transition between an open state that allows the fluid to flow through the pipe 45 and a closed state that prevents the fluid from flowing through the pipe 45. The nozzle 44 is disposed above the substrate W so that the outlet faces the front surface Wa of the substrate W. The nozzle 44 is configured to discharge the processing liquid L3 fed from the pump 42 from the outlet.

[0034] 1 and 2, piping 45 may be configured to connect, in order from the upstream side, liquid source 41, pump 42, valve 43, and nozzle 44. As illustrated in Fig. 1 and Fig. 2, piping 45 may start from liquid source 41 in load / unload section 5, branch so as to pass through liquid processing sections U12 of multiple liquid processing units U1, and then join again to return to liquid source 41. In other words, processing liquid L3 may flow in a circulating manner through piping 45.

[0035] 2, in each liquid processing unit U12, the pipe 45 may include an intermediate section 45a located near the pipe 25 and a tip section 45b branching from the intermediate section 45a and connected to the nozzle 44. That is, with respect to the flow direction of the processing liquid L3, the intermediate section 45a is located upstream of the tip section 45b. The processing liquid L3 flowing through the intermediate section 45a may be heated by the heat of the cleaning liquid L1 flowing through the pipe 25 located nearby.

[0036] 3, the drive source 46 is directly or indirectly connected to the nozzle 44. The drive source 46 is configured to operate based on an operation signal from the controller Ctr, and to move the nozzle 44 above the substrate W in the horizontal or vertical direction.

[0037] The measurement unit U13 is configured to measure the temperature of the processing liquid L3 flowing through the pipe 45. As illustrated in Fig. 2, the measurement unit U13 may be configured to measure the temperature of the processing liquid L3 flowing through the tip 45b, or may be configured to measure the temperature of the processing liquid L3 flowing in a portion of the pipe 45 other than the tip 45b. The measurement unit U13 is configured to transmit data of the measured temperature to the controller Ctr.

[0038] [Drying processing unit U2] Next, the drying processing unit U2 will be described in detail with reference to Figures 1, 2, and 4. As illustrated in Figures 1 and 2, the drying processing unit U2 includes a weighing section U21 and a drying processing section U22.

[0039] The weighing unit U21 is configured to measure the weight of the substrate W carried into the dry processing unit U2. The weighing unit U21 is configured to transmit data of the measured weight to the controller Ctr.

[0040] The drying processing unit U22 is configured to perform supercritical processing on a substrate W having a liquid film R formed on its surface Wa. The supercritical processing is a process of drying the substrate W by bringing a processing fluid in a supercritical state (supercritical fluid) into contact with the substrate W having the liquid film R formed on its surface Wa. As illustrated in FIG. 4, the drying processing unit U22 includes a main body 51, a holding plate 52, and a lid member 53.

[0041] The main body 51 is a container configured to be able to accommodate the substrate W inside. An opening 51a is formed in the front of the main body 51 to allow the substrate W to enter and exit. Supply ports 54 and 55 and a discharge port 56 are provided in the wall of the main body 51.

[0042] The supply ports 54, 55 are each connected to a supply source (not shown) of a processing fluid (e.g., carbon dioxide) via a supply pipe. The supply port 54 is connected to a supply header 57 attached to the rear surface of the main body 51. The supply port 55 is connected to a supply header 58 attached to the bottom surface of the main body 51. The supply headers 57, 58 each include a plurality of supply ports aligned in a predetermined direction, and are configured to supply the supercritical fluid into the main body 51 from the supply ports.

[0043] The discharge port 56 is connected to a discharge pipe extending outside the main body 51. The discharge port 56 is connected to a discharge header 59 attached near the opening 51a of the main body 51. The discharge header 59 includes a plurality of discharge ports aligned in a predetermined direction and is configured to discharge the supercritical fluid from the discharge ports to the outside of the main body 51. The supercritical fluid discharged from the discharge header 59 to the outside of the main body 51 may include the processing liquid L3 that has been dissolved in the supercritical fluid in a supercritical state from the surface of the substrate W.

[0044] The holding plate 52 is configured to be able to horizontally hold the substrate W to be processed. The lid member 53 is attached to the holding plate 52 and configured to seal the opening 51 a when the holding plate 52 is inserted into the main body 51 through the opening 51 a.

[0045] [Controller Details] The controller Ctr is configured to partially or entirely control the substrate processing system 1. As illustrated in FIG. 5, the controller Ctr has functional modules including a reading unit M1, a memory unit M2, a processing unit M3, and an instruction unit M4. These functional modules are merely a division of the functions of the controller Ctr into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being realized by the execution of a program, but may also be realized by a dedicated electric circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) integrating such circuits.

[0046] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each unit of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. Note that, hereinafter, each unit of the substrate processing system 1 may include each unit of the liquid processing unit U12 and the drying processing unit U22.

[0047] The memory unit M2 is configured to store various data. The memory unit M2 may store, for example, a program read from the recording medium RM by the reader M1, setting data input by an operator via an external input device (not shown), etc. The memory unit M2 may store, for example, weight data acquired by the weighing units U11 and U21, and temperature data acquired by the measurement unit U13. The memory unit M2 may store, for example, processing conditions for processing the substrate W, a liquid film model D1 for estimating a predicted liquid volume of the liquid film R formed on the surface Wa of the substrate W, and a processing condition model D2 for estimating the processing conditions for the substrate W. Details of the liquid film model D1 and the processing condition model D2 will be described later.

[0048] The processing unit M3 is configured to process various data, and may generate signals for operating each unit of the substrate processing system 1 based on the various data stored in the storage unit M2, for example.

[0049] The instruction unit M4 is configured to transmit the operation signal generated in the processing unit M3 to each unit of the substrate processing system 1.

[0050] The hardware of the controller Ctr may be configured, for example, by one or more control computers. The controller Ctr may include a circuit C1 as a hardware configuration, as exemplified in Fig. 6. The circuit C1 may be configured by electric circuit elements. The circuit C1 may include, for example, a processor C2, a memory C3, a storage C4, a driver C5, and an input / output port C6.

[0051] The processor C2 may be configured to execute a program in cooperation with at least one of the memory C3 and the storage C4 and to implement each of the above-mentioned functional modules by inputting and outputting signals via the input / output port C6. The memory C3 and the storage C4 may function as the storage unit M2. The driver C5 may be a circuit configured to drive each component of the substrate processing system 1. The input / output port C6 may be configured to mediate the input and output of signals between the driver C5 and each component of the substrate processing system 1.

[0052] The substrate processing system 1 may include one controller Ctr, or may include a controller group (controller) composed of multiple controllers Ctr. When the substrate processing system 1 includes a controller group, each of the above-mentioned functional modules may be realized by one controller Ctr, or may be realized by a combination of two or more controllers Ctr. When the controller Ctr is composed of multiple computers (circuits C1), each of the above-mentioned functional modules may be realized by one computer (circuit C1), or may be realized by a combination of two or more computers (circuits C1). The controller Ctr may include multiple processors C2. In this case, each of the above-mentioned functional modules may be realized by one processor C2, or may be realized by a combination of two or more processors C2.

[0053] [Model generation method] Next, a method for generating the liquid film model D1 will be described with reference to Figures 7 and 8. First, the test substrate is transported to the liquid processing unit U1 (see step S1 in Figure 7). Next, the test substrate is placed on the weighing section U11, and the weight of the test substrate is measured (see step S2 in Figure 7). The measured weight data is sent to the controller Ctr.

[0054] Next, the test substrate is held by the rotation holder 10 of the liquid processing unit U12. Next, the controller Ctr controls the rotation holder 10 to rotate the test substrate while suction-holding it with the holder 13. In this state, the controller Ctr controls the cleaning liquid supply unit 20 to supply cleaning liquid L1 from the nozzle 24 onto the front surface of the test substrate (see step S3 in FIG. 7).

[0055] The cleaning liquid L1 supplied to the surface of the test substrate flows from the center to the outer periphery of the test substrate over the entire surface as the test substrate rotates, and is then spun outward from the outer periphery. Therefore, while the cleaning liquid L1 continues to be supplied from the nozzle 24, a liquid film of the cleaning liquid L1 is formed on the surface of the test substrate. As a result, the test substrate is cleaned by the cleaning liquid L1.

[0056] Next, the controller Ctr controls the rotation holder 10 to rotate the test substrate while suction-holding the rear surface of the test substrate with the holder 13. In this state, the controller Ctr controls the rinse liquid supply unit 30 to supply the rinse liquid L2 from the nozzle 34 to the front surface of the test substrate (see step S4 in FIG. 7).

[0057] As the test substrate rotates, the rinsing liquid L2 supplied to the surface of the test substrate flows from the center of the test substrate toward the outer periphery, replacing the cleaning liquid L1, over the entire surface, and is then spun outward from the outer periphery of the test substrate. As a result, the cleaning liquid L1 is discharged from the surface of the test substrate, and a liquid film of the rinsing liquid L2 is formed on the surface of the test substrate while the supply of the rinsing liquid L2 from the nozzle 34 continues.

[0058] Next, the temperature of the processing liquid L3 supplied to the surface of the test substrate is measured by the measuring unit U13 (see step S5 in FIG. 7), and the measured temperature data is sent to the controller Ctr.

[0059] Next, the controller Ctr controls the rotation holder 10 to rotate the test substrate while suction-holding the rear surface of the test substrate with the holder 13. In this state, the controller Ctr controls the processing liquid supply unit 40 to supply the processing liquid L3 from the nozzle 44 onto the front surface of the test substrate (see step S6 in FIG. 7).

[0060] As the test substrate rotates, the processing liquid L3 supplied to the surface of the test substrate flows over the entire surface from the center toward the outer periphery of the test substrate, replacing the rinsing liquid L2. The processing liquid L3 is then shaken off from the outer periphery of the test substrate (see processing period T1 in FIG. 8 ). When the rinsing liquid L2 on the surface of the test substrate has been replaced with the processing liquid L3, the controller Ctr controls the processing liquid supply unit 40 to gradually stop the supply of the processing liquid L3 (see processing period T2 in FIG. 8 ). The controller Ctr then controls the rotation holder 10 to increase the rotation speed of the test substrate (see processing period T3 in FIG. 8 ), and stops the rotation of the test substrate after a predetermined time has elapsed. This causes the excess processing liquid L3 on the test substrate to be shaken off, forming a predetermined amount of liquid film R on the surface of the test substrate.

[0061] During the processing period T3, the rotation speed of the substrate may be set to, for example, about 10 rpm to 300 rpm. During the processing period T3, the rotation acceleration of the substrate may be set to, for example, 200 rpm. 2 ~1500r.ps 2 In the processing period T3, the rotation time of the substrate may be set to, for example, about 0.1 sec to 5 sec.

[0062] Next, the test substrate with the liquid film R formed on its surface is placed on the weighing unit U11, and the weight of the test substrate and the liquid film R is measured (see step S7 in FIG. 7). The measured weight data is sent to the controller Ctr. The controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S2 from the weight data measured in step S7. Furthermore, the controller Ctr calculates the liquid amount of the liquid film R, i.e., the volume of the liquid film R, by dividing the weight by the density of the treatment liquid L3 (see step S8 in FIG. 7). In this way, the temperature of the treatment liquid L3 measured in step S5 and the liquid amount of the liquid film R formed on the surface of the test substrate are associated with each other and stored in the controller Ctr.

[0063] Then, without changing the rotation speed, rotation acceleration, and rotation time of the test substrate during the processing period T3 (hereinafter, these parameters may be collectively referred to as "processing conditions"), a liquid film R is formed on the surface of the plurality of test substrates while changing the temperature of the processing liquid L3, and the process of acquiring the liquid volume of the liquid film R is repeated. As a result, a plurality of data showing the correspondence relationship between the temperature of the processing liquid L3 and the liquid volume of the liquid film R is obtained (see FIG. 9(a)). Based on this plurality of data, an approximation line is calculated using, for example, the least squares method, to obtain a liquid film model D1 in which the temperature of the processing liquid L3 and the liquid volume of the liquid film R are associated (see step S9 in FIG. 7). Note that, in obtaining the liquid film model D1, it is sufficient that the type of processing liquid L3 and the processing conditions during the processing period T3 are set to be the same for the plurality of test substrates.

[0064] Next, a method for generating the process condition model D2 will be described. The method for generating the process condition model D2 is substantially the same as the method for generating the liquid film model D1. However, the difference is that the rotational acceleration and rotation time of the test substrate during the processing period T3 and the temperature of the processing liquid L3 are not changed, and the process of forming the liquid film R on the surface of multiple test substrates and acquiring the liquid volume of the liquid film R is repeated while changing the rotational speed of the test substrate during the processing period T3. Therefore, multiple data showing the correspondence relationship between the rotational speed of the substrate during the processing period T3 and the liquid volume of the liquid film R are obtained (see FIG. 9(b)). Based on these multiple data, an approximation line is calculated using, for example, the least squares method, to obtain the process condition model D2 in which the rotational speed of the substrate during the processing period T3 corresponds to the liquid volume of the liquid film R. Note that the process condition model D2 in which the rotational acceleration of the substrate during the processing period T3 corresponds to the liquid volume of the liquid film R may be generated instead of the rotational speed of the substrate during the processing period T3. Furthermore, a processing condition model D2 may be generated in which, instead of the rotation speed of the substrate during the processing period T3, the rotation time of the substrate during the processing period T3 is associated with the liquid volume of the liquid film R. Alternatively, a processing condition model D2 may be generated in which at least one of the rotation speed, rotation acceleration, and rotation time of the substrate during the processing period T3 is associated with the liquid volume of the liquid film R.

[0065] [Substrate processing method] Next, a method for processing the substrate W will be described with reference to Fig. 10. First, the controller Ctr controls the transport arms A1 and A2 to transport the substrate W from the carrier 7 to the liquid processing unit U1 (see step S11 in Fig. 10). Next, the substrate W is placed on the weighing section U11, and the weight of the substrate W is measured (see step S12 in Fig. 10). Data on the measured weight is sent to the controller Ctr.

[0066] Next, the substrate W is held by the spin holder 10 of the liquid processing unit U12. Next, the controller Ctr controls the spin holder 10 to rotate the substrate W while suction-holding the back surface of the substrate W with the holder 13. In this state, the controller Ctr controls the cleaning liquid supply unit 20 to supply the cleaning liquid L1 from the nozzle 24 to the front surface Wa of the substrate W (see step S13 in FIG. 10).

[0067] The cleaning liquid L1 supplied to the front surface Wa of the substrate W flows over the entire front surface Wa from the center toward the outer periphery of the substrate W due to the rotation of the substrate W, and is then spun outward from the outer periphery. Therefore, while the cleaning liquid L1 continues to be supplied from the nozzle 24, a liquid film of the cleaning liquid L1 is formed on the front surface Wa of the substrate W. As a result, the substrate W is cleaned by the cleaning liquid L1.

[0068] Next, the controller Ctr controls the rotation holder 10 to rotate the substrate W while suction-holding the backside of the substrate W with the holder 13. In this state, the controller Ctr controls the rinse liquid supply unit 30 to supply the rinse liquid L2 from the nozzle 34 to the front side Wa of the substrate W (see step S14 in FIG. 10).

[0069] The rinsing liquid L2 supplied to the front surface Wa of the substrate W flows over the entire front surface Wa from the center toward the outer periphery of the substrate W while replacing the cleaning liquid L1 due to the rotation of the substrate W, and is then spun outward from the outer periphery of the substrate W. Therefore, while the cleaning liquid L1 is discharged from the front surface Wa of the substrate W and the supply of the rinsing liquid L2 from the nozzle 34 continues, a liquid film of the rinsing liquid L2 is formed on the front surface Wa of the substrate W.

[0070] Next, the temperature of the processing liquid L3 supplied to the surface of the test substrate is measured by the measurement unit U13 (see step S15 in FIG. 10). The measured temperature data is sent to the controller Ctr. The controller Ctr calculates a predicted liquid volume of the liquid film R corresponding to the temperature based on the received temperature data and the liquid film model D1 stored in the memory unit M2. The controller Ctr also calculates processing conditions (e.g., the rotation speed of the substrate during the processing period T3) that will result in the predicted liquid volume based on the calculated predicted liquid volume and the processing condition model D2 stored in the memory unit M2 (see step S16 in FIG. 10).

[0071] Next, the controller Ctr controls the rotation holder 10 to rotate the substrate W while suction-holding the backside of the substrate W with the holder 13. In this state, the controller Ctr controls the processing liquid supply unit 40 to supply the processing liquid L3 from the nozzle 44 to the front side Wa of the substrate W (see step S17 in FIG. 10).

[0072] The processing liquid L3 supplied to the front surface Wa of the substrate W flows over the entire surface from the center of the substrate W toward the outer periphery as the substrate W rotates, replacing the rinsing liquid L2. The processing liquid L3 is then spun outward from the outer periphery of the substrate W (see processing period T1 in FIG. 8 ). When the rinsing liquid L2 on the front surface Wa of the substrate W has been replaced with the processing liquid L3, the controller Ctr controls the processing liquid supply unit 40 to gradually stop the supply of the processing liquid L3 (see processing period T2 in FIG. 8 ). Thereafter, the controller Ctr controls the spin holder 10 to increase the rotation speed of the substrate W based on the processing conditions calculated in step S16 (see processing period T3 in FIG. 8 ), and stops the rotation of the substrate W after a predetermined time has elapsed. This forms a liquid film R of a predetermined amount on the front surface Wa of the substrate W.

[0073] Next, the substrate W having the liquid film R formed on its surface is placed on the weighing unit U11, and the weight of the substrate W and the liquid film R is measured (see step S18 in FIG. 10). The measured weight data is sent to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S12 from the weight data measured in step S18. Furthermore, the controller Ctr calculates the liquid volume of the liquid film R by dividing the weight by the density of the processing liquid L3 (see step S18 in FIG. 10).

[0074] The liquid volume of the liquid film R calculated in step S18 (hereinafter referred to as the measured liquid volume 1) should be approximately equal to the predicted liquid volume calculated in step S16. However, due to various factors, such as a malfunction of the liquid processing unit U1, the measured liquid volume 1 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether the measured liquid volume 1 is within a predetermined target range H1 (see step S19 in FIG. 10). The target range H1 may be set, for example, to a range of ±5% or less of the predicted liquid volume, with the predicted liquid volume as the reference.

[0075] If the controller Ctr determines NO in step S19, the substrate W has not been dried and can be reused, so the process proceeds to step S20, where the processing conditions are corrected, and the processing from step S11 onwards is performed again on the same substrate W. If the controller Ctr determines in step S19 that the measured liquid volume 1 is greater than the target range H1, the controller Ctr may correct the substrate rotation speed during processing period T3 in step S20, for example, to increase the substrate rotation acceleration during processing period T3, or to lengthen the substrate rotation time during processing period T3. On the other hand, if the controller Ctr determines in step S19 that the measured liquid volume 1 is smaller than the target range H1, the controller Ctr may correct the substrate rotation speed during processing period T3 in step S20, for example, to decrease the substrate rotation acceleration during processing period T3, or to shorten the substrate rotation time during processing period T3. In addition, if it is determined in step S19 that the actual measured liquid volume 1 is significantly larger than the target range H1 or significantly smaller than the target range H1, it may be assumed that an unexpected malfunction has occurred and the processing of the substrate W may be stopped.

[0076] If the controller Ctr determines YES in step S19, the controller Ctr controls the transport arm A2 to transport the substrate W from the liquid processing unit U1 to the drying processing unit U2 (see step S21 in FIG. 10). Next, the substrate W is placed on the weighing part U21, and the weight of the substrate W is measured (see step S22 in FIG. 10). The measured weight data is sent to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S12 from the weight data measured in step S22. Furthermore, the controller Ctr calculates the liquid volume of the liquid film R by dividing the weight by the density of the processing liquid L3 (see step S22 in FIG. 10).

[0077] The liquid volume of the liquid film R calculated in step S22 (hereinafter referred to as measured liquid volume 2) should be approximately equal to measured liquid volume 1 and the predicted liquid volume calculated in step S16. However, due to various factors, such as liquid spillage from the substrate W while the substrate W is being transported to the dry processing unit U2, measured liquid volume 2 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether measured liquid volume 2 is within a predetermined target range H2 (see step S23 in FIG. 10). The target range H2 may be set, for example, to a range of ±5% or less of the predicted liquid volume, with the predicted liquid volume as the reference. The target range H2 may be the same as the target range H1.

[0078] If the controller Ctr determines NO in step S23, there is a concern that the processing liquid L3 may have spilled, so the process proceeds to step S24 to stop the processing of the substrate W. The substrate W cannot be processed again and is therefore discarded.

[0079] If the controller Ctr determines YES in step S23, the substrate W is held by the holding plate 52, and the substrate W together with the holding plate 52 is inserted into the main body 51 of the drying processing unit U22. When a supercritical fluid in a high pressure state (for example, about 16 MPa) is supplied to the substrate W in the drying processing unit U22, the liquid film R filling the spaces between the patterns formed on the substrate W gradually dissolves in the supercritical fluid upon contact with the supercritical fluid and is gradually replaced by the supercritical fluid. Eventually, the spaces between the patterns are filled only with the supercritical fluid.

[0080] After the liquid film R is removed from between the patterns by replacement with the supercritical fluid, when the pressure inside the main body 51 is reduced from the high pressure state to atmospheric pressure, the supercritical fluid changes to a gaseous state, and the spaces between the patterns are occupied only by gas. In this way, the liquid film R is removed from the surface Wa of the substrate W, and the drying process of the substrate W is completed (see step S25 in FIG. 10).

[0081] Next, the substrate W is placed on the weighing unit U21, and the weight of the substrate W is measured (see step S26 in FIG. 10). The measured weight data is sent to the controller Ctr. Next, the controller Ctr calculates the weight of the liquid film R by subtracting the weight data measured in step S26 from the weight data measured in step S22. Furthermore, the controller Ctr calculates the liquid volume of the liquid film R by dividing the weight by the density of the processing liquid L3 (see step S26 in FIG. 10).

[0082] The liquid volume of the liquid film R calculated in step S26 (hereinafter referred to as measured liquid volume 3) should be approximately equal to measured liquid volumes 1 and 2 and the predicted liquid volume calculated in step S16. However, due to various factors such as a malfunction of the drying processing unit U2, measured liquid volume 3 may deviate from the predicted liquid volume. Therefore, the controller Ctr determines whether measured liquid volume 3 is within a predetermined target range H3 (see step S27 in FIG. 10). The target range H3 may be set, for example, to a range of ±5% or less of the predicted liquid volume, with the predicted liquid volume as the reference. The target range H3 may be the same as the target range H1.

[0083] If the controller Ctr determines NO in step S27, there is a concern that the liquid film R has not been dried normally, so the process proceeds to step S24 and stops the processing of the substrate W. The substrate W cannot be processed again and is therefore discarded.

[0084] If the controller Ctr determines YES in step S27, the controller Ctr determines whether the measured fluid volume 3 is within a predetermined target range H4 (see step S28 in FIG. 10). The target range H4 is narrower than the target range H3, and may be set to a range of ±3% or less of the estimated fluid volume, for example, with the estimated fluid volume as the reference.

[0085] If the controller Ctr determines NO in step S28, the measured liquid volume 3 is within the target range H3, so that the substrate has been properly processed, but is somewhat different from the predicted liquid volume, which is the reference value. Therefore, the process proceeds to step S20, where the processing conditions are corrected, and the processing from step S11 onwards is performed on the subsequent substrate W.

[0086] If the controller Ctr determines YES in step S28, the controller Ctr controls the transport arms A1 and A2 to transport the substrate W to the carrier 7 (see step S29 in FIG. 10). With the above, the processing of the substrate W is completed.

[0087] [Effect] According to the above example, a liquid film model D1 that represents the relationship between the temperature of the processing liquid L3 supplied to the substrate W and the amount of the liquid film R formed on the surface Wa of the substrate W is prepared in advance, and the processing conditions for the substrate W are set so that the predicted liquid amount is calculated based on the temperature of the processing liquid L3 measured during actual substrate processing and the liquid film model D1. Therefore, during actual substrate processing, an appropriate amount of the liquid film R is formed on the surface Wa of the substrate W depending on the temperature of the processing liquid L3 supplied to the substrate W. This makes it possible to accurately adjust the amount of the liquid film R formed on the surface Wa of the substrate W.

[0088] According to the above example, the amount of the liquid film R formed on the surface Wa of the substrate W is adjusted by rotating the substrate W to shake off the excess portion of the processing liquid L3 on the substrate W from the substrate W. Therefore, it is possible to adjust the amount of the liquid film R formed on the surface Wa of the substrate W by the extremely simple method of rotating the substrate W.

[0089] According to the above example, a processing condition model D2 that represents the relationship between the processing conditions during processing period T3 and the amount of liquid film R formed on the surface Wa of the substrate W is prepared in advance, and the processing conditions are set based on the processing condition model D2 and the predicted liquid amount calculated in step S16. Therefore, the substrate W can be processed quickly without having to go through trial and error, such as repeatedly forming a liquid film R on the substrate W until a liquid film R that matches the predicted liquid amount is obtained. Therefore, it is possible to quickly process the substrate W while accurately adjusting the amount of liquid film R formed on the surface Wa of the substrate W.

[0090] According to the above example, the processing condition can be at least one of the rotation speed of the substrate W during the processing period T3, the rotation acceleration of the substrate W, and the rotation time of the substrate W. These are indicators that are particularly used when controlling the rotation of the substrate W, and therefore it becomes possible to more easily adjust the amount of liquid in the liquid film R formed on the surface Wa of the substrate W.

[0091] According to the above example, the cleaning liquid L1, the rinse liquid L2, and the processing liquid L3 are sequentially supplied to the substrate W. In this case, the processing liquid L3 is further supplied to the substrate W that has been cleaned with the cleaning liquid L1 and the rinse liquid L2, and a drying process is then performed. This makes it possible to maintain the cleanliness of the substrate W after cleaning.

[0092] According to the above example, the measurement unit U13 is configured to measure the temperature of the processing liquid L3 flowing through the tip portion 45b. That is, the measurement unit U13 measures the temperature of the processing liquid L3 immediately before or shortly before it is dispensed onto the substrate W. This allows the temperature of the processing liquid L3 supplied to the substrate W to be obtained more accurately. This makes it possible to more accurately determine the predicted volume of the liquid film R to be formed on the surface Wa of the substrate W. In particular, according to the above example, the intermediate portion 45a is located near the pipe 25 through which the cleaning liquid L1 flows, and the measurement unit U13 measures the temperature of the processing liquid L3 flowing through the tip portion 45b after being heated by the cleaning liquid L1. This allows the temperature of the processing liquid L3 to be measured before it is dispensed onto the substrate W and after it has been affected by external heat. This makes it possible to more accurately determine the predicted volume of the liquid film R to be formed on the surface Wa of the substrate W compared to when the temperature of the processing liquid L3 flowing upstream of the tip portion 45b is measured.

[0093] According to the above example, the substrate W can be dried by the supercritical processing. Therefore, if a pattern is formed on the substrate W, it is possible to prevent the pattern from collapsing during the drying processing.

[0094] According to the above example, the processing conditions can be corrected based on a comparison between the measured liquid volume 1 and the target range H1. Similarly, the processing conditions can be corrected based on a comparison between the measured liquid volume 3 and the target range H4. In this case, the processing conditions are corrected according to the degree to which the volume of the liquid film R actually formed on the surface of the substrate W deviates from the predicted liquid volume that serves as a reference. This makes it possible to more accurately adjust the volume of the liquid film R formed on the surface Wa of the subsequent substrate W.

[0095] According to the above example, the processing of the substrate W can be stopped based on a comparison between the measured liquid volumes 1 to 3 and the target ranges H1 to H3. In this case, there is a concern that a defect may have occurred in the substrate W after the liquid film R has been formed or the substrate W after the drying process, so by stopping the processing of the substrate W, the substrate W can be excluded from subsequent processing. This makes it possible to increase the productivity of substrate processing.

[0096] [Variations] The disclosure in this specification should be considered to be illustrative in all respects and not restrictive. Various omissions, substitutions, modifications, etc. may be made to the above examples without departing from the scope and spirit of the claims.

[0097] (1) When the processing of the substrate W is stopped in step S24, a warning may be issued to the operator using an alarm or the like.

[0098] (2) The discharge flow rate of the treatment liquid L3 may be changed depending on the temperature of the treatment liquid L3 measured by the measuring unit U13.

[0099] (3) A liquid film model D1 may be generated in which the environmental temperature in the drying processing unit U2 and the liquid amount of the liquid film R formed on the surface of the substrate are associated with each other.

[0100] [Other examples] Example 1. An example of a substrate processing apparatus includes a liquid processing unit configured to supply a processing liquid to a substrate while rotating the substrate to form a liquid film on the surface of the substrate, a measurement unit configured to measure the temperature of the processing liquid supplied to the substrate, a drying processing unit configured to dry the substrate on which the liquid film has been formed, and a control unit. The control unit is configured to perform the following steps: a first process of calculating an estimated liquid volume of the liquid film to be formed on the surface of the substrate based on a liquid film model that represents the relationship between the temperature of the processing liquid supplied to the substrate and the liquid volume of the liquid film formed on the surface of the substrate and the temperature measured by the measurement unit; a second process of setting process conditions that result in the estimated liquid volume calculated in the first process; and a third process of forming a liquid film on the surface of the substrate in the liquid processing unit based on the process conditions set in the second process.

[0101] The liquid film formed on the surface of the substrate serves to prevent the substrate surface from drying out before the substrate is transported to the drying unit and subjected to drying processing, thereby preventing particles from being generated on the surface. However, if the amount of liquid film on the surface of the substrate is too small, the pattern formed on the substrate may collapse during drying processing. On the other hand, if the amount of liquid film on the surface of the substrate is too large, particles may be generated on the substrate after drying processing. Therefore, the inventors have conducted extensive research and discovered a new finding: when the temperature of the processing liquid supplied to the substrate changes, the volume of the liquid film formed on the surface of the substrate expands or contracts, causing variations in the amount of the liquid film, which may affect the subsequent drying processing of the substrate. This finding led to the completion of the present invention. That is, according to Example 1, a liquid film model representing the relationship between the temperature of the processing liquid supplied to the substrate and the amount of the liquid film formed on the surface of the substrate is prepared in advance, and the substrate processing conditions are set so that the temperature of the processing liquid measured during actual substrate processing and the predicted liquid amount calculated based on the liquid film model are the same. Therefore, an appropriate amount of liquid film is formed on the surface of the substrate depending on the temperature of the processing liquid supplied to the substrate during actual substrate processing, and therefore the amount of liquid film formed on the surface of the substrate can be adjusted with precision.

[0102] Example 2: In the apparatus of Example 1, the third process may include supplying the processing liquid while rotating the substrate to spread the processing liquid over the surface of the substrate, and spinning off excess processing liquid from the substrate by rotating the substrate so that the amount of liquid in the liquid film formed on the surface of the substrate is the predicted amount. In this case, the amount of liquid in the liquid film formed on the surface of the substrate can be adjusted by the extremely simple method of rotating the substrate.

[0103] Example 3: In the apparatus of Example 2, the second process may include setting process conditions based on a process condition model that represents the relationship between the process conditions for shaking off the excess portion from the substrate and the liquid volume of the liquid film formed on the surface of the substrate, and the predicted liquid volume calculated in the first process. In this case, by preparing the process condition model in advance, the process conditions that result in the predicted liquid volume can be immediately calculated. Therefore, the substrate can be processed quickly without having to go through trial and error, such as repeatedly forming a liquid film on the substrate until a liquid film with the predicted liquid volume is obtained. Therefore, it is possible to quickly process the substrate while accurately adjusting the liquid volume of the liquid film formed on the surface of the substrate.

[0104] Example 4: In the apparatus of Examples 2 or 3, the processing conditions may be at least one of the rotation speed of the substrate, the rotation acceleration of the substrate, and the rotation time of the substrate when shaking off the excess portion from the substrate. These are indices that are particularly used when controlling the rotation of the substrate, and therefore it becomes possible to more easily adjust the amount of liquid in the liquid film formed on the surface of the substrate.

[0105] Example 5: In the apparatus of any one of Examples 1 to 4, the control unit may be configured to further perform a fourth process before the third process, in which a cleaning liquid and a rinse liquid are sequentially supplied to the substrate while rotating the substrate to clean the surface of the substrate. In this case, a processing liquid is further supplied and a drying process is further performed on the substrate cleaned with the cleaning liquid and the rinse liquid. Therefore, it is possible to maintain the cleanliness of the substrate after cleaning.

[0106] Example 6: In the apparatus of Example 5, the liquid processing unit may include a supply line configured to allow the processing liquid to flow, the supply line including a tip connected to a discharge nozzle from which the processing liquid is discharged, and the measurement unit configured to measure the temperature of the processing liquid flowing through the tip. In this case, the temperature of the processing liquid immediately before or shortly before being discharged onto the substrate is measured by the measurement unit. Therefore, the temperature of the processing liquid supplied to the substrate can be obtained with greater accuracy. Therefore, it becomes possible to more accurately determine the predicted liquid volume of the liquid film formed on the surface of the substrate.

[0107] Example 7 In any of the apparatuses of Examples 1 to 6, the processing liquid supplied to the substrate may be isopropyl alcohol.

[0108] Example 8: In the apparatus of any one of Examples 1 to 7, the drying processing unit may be configured to dry the substrate on which the liquid film has been formed by supercritical processing. In this case, the supercritical fluid has a lower viscosity than the processing liquid and has a high ability to dissolve the processing liquid. In addition, there is no interface between the supercritical fluid and a liquid or gas in equilibrium with the supercritical fluid. Therefore, in supercritical processing (drying processing using a supercritical fluid), the processing liquid can be dried without being affected by surface tension. Therefore, if a pattern is formed on the substrate, it is possible to prevent the pattern from collapsing during the drying processing.

[0109] Example 9: The apparatus of any of Examples 1 to 8 may further include a weighing unit configured to measure weight, and the control unit may be configured to further perform the following steps after the third process: a fifth process in which the weighing unit measures the weight of the substrate on whose surface a liquid film has been formed in the third process; a sixth process in which the amount of liquid formed on the surface of the substrate is calculated based on the weight measured in the fifth process; and a seventh process in which the processing conditions set for processing a subsequent substrate are corrected based on the difference between the amount of liquid calculated in the sixth process and a predetermined reference value. In this case, the processing conditions are corrected depending on the degree to which the amount of liquid film actually formed on the surface of the substrate deviates from the reference value. This makes it possible to more accurately adjust the amount of liquid film formed on the surface of a subsequent substrate.

[0110] Example 10: In the apparatus of Example 9, the control unit may be configured to further execute an eighth process that stops substrate processing without executing the seventh process if the liquid volume calculated in the sixth process is outside a predetermined target range. In this case, since there is a concern that defects may occur in the substrate after the drying process, stopping the processing of the substrate can exclude the substrate from subsequent processes. Therefore, it is possible to increase productivity in substrate processing.

[0111] Example 11. An example of a substrate processing method includes a first step of constructing a liquid film model that represents the relationship between the temperature of a processing liquid supplied to a substrate in a liquid processing unit and the amount of a liquid film formed on the surface of the substrate by supplying the processing liquid to the substrate; a second step of measuring the temperature of the processing liquid before being supplied to the substrate in the liquid processing unit with a measurement unit; a third step of calculating an estimated amount of liquid to be formed on the surface of the substrate in the liquid processing unit based on the liquid film model and the temperature measured by the measurement unit; a fourth step of setting processing conditions that will result in the estimated amount of liquid calculated in the third step; a fifth step of supplying a processing liquid while rotating the substrate in the liquid processing unit based on the processing conditions set in the fourth step to form a liquid film on the surface of the substrate; and a sixth step of drying the substrate on which the liquid film has been formed in the drying processing unit after the fifth step. In this case, the same effects as those of the apparatus of Example 1 can be obtained.

[0112] Example 12: In the method of Example 11, the fifth step may include supplying the treatment liquid while rotating the substrate to spread the treatment liquid over the surface of the substrate, and spinning off excess treatment liquid from the substrate by rotating the substrate so that the amount of liquid in the liquid film formed on the surface of the substrate is the predicted amount. In this case, the same effects as those of the apparatus of Example 2 can be obtained.

[0113] Example 13: In the method of Example 12, the fourth step may include setting processing conditions based on a processing condition model that represents the relationship between processing parameters for shaking off the excess portion from the substrate and the liquid volume of the liquid film formed on the surface of the substrate, and the predicted liquid volume calculated in the third step. In this case, the same effects as those of the apparatus of Example 3 can be obtained.

[0114] Example 14: In the method of Example 12 or Example 13, the processing conditions may be at least one of the rotation speed of the substrate, the rotation acceleration of the substrate, and the rotation time of the substrate when shaking off the excess portion from the substrate. In this case, the same effects as those of the apparatus of Example 4 can be obtained.

[0115] Example 15: The method of any of Examples 11 to 14 may further include a seventh step, before the fifth step, of cleaning the surface of the substrate by sequentially supplying a cleaning liquid and a rinse liquid while rotating the substrate. In this case, the same effects as those of the apparatus of Example 5 can be obtained.

[0116] Example 16 In the method of Example 15, the liquid processing unit may include a supply line configured to allow the processing liquid to flow, the supply line including a tip connected to a discharge nozzle through which the processing liquid is discharged, and the measurement unit may be configured to measure the temperature of the processing liquid flowing through the tip. In this case, the same effects as those of the device of Example 6 can be obtained.

[0117] Example 17 In the method of any one of Examples 11 to 16, the processing liquid supplied to the substrate may be isopropyl alcohol.

[0118] Example 18 In any of the methods of Examples 11 to 17, the drying processing unit may be configured to dry the substrate on which the liquid film is formed by supercritical processing. In this case, the same effects as those of the device of Example 8 can be obtained.

[0119] Example 19. Any of the methods of Examples 11 to 18 may further include an eighth step, after the fifth step and before the sixth step, of measuring the weight of the substrate with a weighing unit on whose surface a liquid film has been formed in the fifth step, a ninth step of calculating the amount of liquid in the liquid film formed on the surface of the substrate based on the weight measured in the eighth step, and a tenth step of correcting the processing conditions to be set for processing a subsequent substrate based on the difference between the amount of liquid calculated in the ninth step and a predetermined reference value. In this case, the same effects as those of the apparatus of Example 9 can be obtained.

[0120] Example 20: The method of Example 19 may further include an 11th step of stopping substrate processing without performing the 10th step if the liquid volume calculated in the 9th step is outside a predetermined target range. In this case, the same effects as those of the apparatus of Example 10 can be obtained. [Explanation of symbols]

[0121] 1...substrate processing system (substrate processing apparatus), 20...cleaning liquid supply section, 40...processing liquid supply section, 44...nozzle (discharge nozzle), 45...piping (supply line), 45b...tip section, Ctr...controller (control section), L1...cleaning liquid, L2...rinsing liquid, L3...processing liquid, D1...liquid film model, R...liquid film, U...substrate processing unit (substrate processing apparatus), U1...liquid processing unit, U11...measuring section, U12...liquid processing section, U13...measurement section, U2...drying processing unit, U21...measuring section, U22...drying processing section, W...substrate, Wa...surface.

Claims

1. a liquid processing section configured to supply a processing liquid to the substrate while rotating the substrate, and form a liquid film on the surface of the substrate; a measuring unit configured to measure the temperature of a processing liquid supplied to the substrate; a drying processing unit configured to dry the substrate on which the liquid film is formed; a control unit; The control unit a first process of calculating a predicted volume of the liquid film formed on the surface of the substrate based on a liquid film model that represents a relationship between a temperature of the processing liquid supplied to the substrate and a volume of the liquid film formed on the surface of the substrate, and the temperature measured by the measurement unit; a second process for setting process conditions so as to obtain the predicted liquid volume calculated in the first process; a third process for forming a liquid film on the surface of the substrate in the liquid processing section based on the process conditions set in the second process, The third process includes: supplying a processing liquid while rotating the substrate to spread the processing liquid over the surface of the substrate; and shaking off the excess portion of the processing liquid supplied to the surface of the substrate from the state in which the supply of the processing liquid to the substrate is stopped by increasing the rotation speed of the substrate at a predetermined rotation acceleration so that the rotation speed of the substrate reaches a predetermined target rotation speed, and starting to decrease the rotation speed of the substrate after a predetermined rotation time has elapsed, so that the amount of liquid in the liquid film formed on the surface of the substrate becomes the predicted liquid amount, the second process includes setting the process conditions based on a process condition model that represents a relationship between a process condition when the excess portion is shaken off from the substrate and a liquid volume of a liquid film formed on the surface of the substrate, and the predicted liquid volume calculated in the first process; The substrate processing apparatus, wherein the processing conditions are the target rotation speed, the rotation acceleration, and the rotation time when the excess portion is shaken off from the substrate.

2. 2. The apparatus according to claim 1, wherein the control unit is configured to further perform a fourth process before the third process, in which a cleaning liquid and a rinsing liquid are sequentially supplied to clean the surface of the substrate while rotating the substrate.

3. the liquid processing unit includes a supply line configured to allow a processing liquid to flow therethrough; the supply line includes a tip connected to a discharge nozzle through which the treatment liquid is discharged; The apparatus of claim 2 , wherein the measurement portion is configured to measure the temperature of the processing liquid flowing through the tip portion.

4. The apparatus according to any one of claims 1 to 3, wherein the processing liquid supplied to the substrate is isopropyl alcohol.

5. 5. The apparatus according to claim 1, wherein the drying processing section is configured to dry the substrate on which the liquid film is formed by a supercritical process.

6. a weighing unit configured to measure a weight; The control unit a fifth process of measuring, by the weighing unit, a weight of the substrate on which a liquid film has been formed in the third process, after the third process; a sixth process of calculating the amount of the liquid film formed on the surface of the substrate based on the weight measured in the fifth process; and The apparatus according to any one of claims 1 to 5, further configured to perform a seventh process of correcting the processing conditions set for processing a subsequent substrate based on the difference between the liquid volume calculated in the sixth process and a predetermined reference value.

7. 7. The apparatus of claim 6, wherein the control unit is configured to further perform an eighth process that stops processing of the substrate without performing the seventh process if the liquid volume calculated in the sixth process is outside a predetermined target range.

8. a first step of constructing a liquid film model that represents a relationship between a temperature of a processing liquid supplied to a substrate in a liquid processing unit and a liquid volume of a liquid film formed on a surface of the substrate by supplying the processing liquid to the substrate; a second step of measuring the temperature of the processing liquid before it is supplied to the substrate in the liquid processing section by a measuring section; a third step of calculating a predicted liquid volume of the liquid film formed on the surface of the substrate in the liquid processing unit based on the liquid film model and the temperature measured by the measurement unit; a fourth step of setting processing conditions so as to obtain the predicted liquid volume calculated in the third step; a fifth step of supplying a processing liquid to the substrate while rotating the substrate in the liquid processing section based on the processing conditions set in the fourth step, to form a liquid film on the surface of the substrate; a sixth step of drying the substrate on which the liquid film has been formed in a drying processing unit after the fifth step, The fifth step includes: supplying a processing liquid while rotating the substrate to spread the processing liquid over the surface of the substrate; and shaking off the excess portion of the processing liquid supplied to the surface of the substrate from the state in which the supply of the processing liquid to the substrate is stopped by increasing the rotation speed of the substrate at a predetermined rotation acceleration so that the rotation speed of the substrate reaches a predetermined target rotation speed, and starting to decrease the rotation speed of the substrate after a predetermined rotation time has elapsed, so that the amount of liquid in the liquid film formed on the surface of the substrate becomes the predicted liquid amount, the fourth step includes setting the processing conditions based on a processing condition model that represents a relationship between processing conditions when the excess portion is shaken off from the substrate and a liquid volume of a liquid film formed on the surface of the substrate, and the predicted liquid volume calculated in the third step; The substrate processing method, wherein the processing conditions are the target rotation speed, the rotation acceleration, and the rotation time when the excess portion is shaken off from the substrate.

9. 9. The method according to claim 8, further comprising a seventh step, before the fifth step, of cleaning the surface of the substrate by sequentially supplying a cleaning liquid and a rinsing liquid while rotating the substrate.

10. the liquid processing unit includes a supply line configured to allow a processing liquid to flow therethrough; the supply line includes a tip connected to a discharge nozzle through which the treatment liquid is discharged; The method of claim 9 , wherein the measurement unit is configured to measure the temperature of the processing liquid flowing through the tip.

11. The method according to any one of claims 8 to 10, wherein the processing liquid supplied to the substrate is isopropyl alcohol.

12. The method according to any one of claims 8 to 11, wherein the drying processing section is configured to dry the substrate on which the liquid film is formed by a supercritical process.

13. an eighth step of measuring, after the fifth step and before the sixth step, the weight of the substrate on which the liquid film has been formed in the fifth step by a weighing unit; a ninth step of calculating the amount of the liquid film formed on the surface of the substrate based on the weight measured in the eighth step; The method according to any one of claims 8 to 12, further comprising a tenth step of correcting the processing conditions to be set when processing a subsequent substrate based on a difference between the liquid volume calculated in the ninth step and a predetermined reference value.

14. 14. The method of claim 13, further comprising an eleventh step of stopping processing of the substrate without performing the tenth step if the liquid volume calculated in the ninth step is outside a predetermined target range.

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