Substrate processing apparatus, lamp module, heating method, substrate processing method, manufacturing method of semiconductor device, and program

Abstract

To provide a technique capable of suppressing a temperature rise of a holder of a lamp at the time of light emission of the lamp while facilitating insertion and removal of the holder into and from an insertion part of a housing.SOLUTION: A substrate processing apparatus includes: a heating part including a processing chamber configured to process a substrate, a lamp configured to heat the substrate in the processing chamber by irradiating the substrate with light, and a storage part configured to store a wiring connected to the lamp; a holder including a first portion configured to cover an outer circumference of the storage part, and a second portion configured to protrude to the outer circumference side from a portion of the first portion opposite to the lamp; an insertion part into which the first portion is inserted in a non-contact state; and a support part configured to support the second portion, and includes: a housing provided above the processing chamber; and a heat attenuation part provided in a portion of the first portion on the lamp side, and capable of forming a heat conduction path that attenuates heat due to the light emitted from the lamp and conducts the heat of the housing part to the housing through the first portion, the second portion, and the support part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The technology disclosed herein relates to a substrate processing apparatus, a lamp module, a heating method, a substrate processing method, a method for manufacturing a semiconductor device, and a program. [Background technology]

[0002] There is known a technique for heating a substrate in a processing chamber with light emitted from a lamp heater (see Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-110429 [Patent Document 2] Japanese Patent Application Laid-Open No. 2013-33946 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that makes it possible to easily insert and remove a lamp holder into and from an insertion portion of a housing, while suppressing a rise in temperature of the holder when the lamp is emitting light. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a processing chamber for processing a substrate; a heating unit including a lamp that irradiates light onto the substrate in the processing chamber to heat it, and a storage unit that stores wiring connected to the lamp; a holder including a first portion that covers an outer periphery of the storage portion, and a second portion that protrudes outward from a portion of the first portion opposite the lamp; a housing provided above the processing chamber, the housing including an insertion portion into which the first portion is inserted in a non-contact state and a support portion that supports the second portion; a thermal attenuation portion provided on a portion of the first portion facing the lamp, the thermal attenuation portion attenuating heat generated by light emitted from the lamp and enabling the formation of a heat conduction path for conducting heat from the storage portion to the housing through the first portion, the second portion, and the support portion; The present invention provides a technique having: [Effects of the Invention]

[0006] According to the present disclosure, it is possible to easily insert and remove the holder that holds the heat lamp into and from the insertion portion of the housing, while suppressing a rise in temperature of the holder when the heat lamp is in operation. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a vertical cross-sectional view of a substrate processing apparatus used in an embodiment of the present disclosure. [Figure 2] FIG. 2 is an enlarged cross-sectional view showing the details of the lamp and its surroundings in FIG. [Figure 3] FIG. 3 is a plan view showing the arrangement of the lamps in FIG. [Figure 4] 2 is a diagram showing a configuration of a control unit (control means) of the substrate processing apparatus according to an embodiment of the present disclosure. FIG. [Figure 5] FIG. 1 is a flow diagram illustrating a substrate processing process according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. It should be noted that the drawings used in the following description are all schematic, and the dimensional relationships, ratios, etc. of elements in the drawings do not necessarily correspond to the actual ones. Furthermore, the dimensional relationships, ratios, etc. of elements between multiple drawings do not necessarily correspond to the actual ones.

[0009] (1) Configuration of the substrate processing equipment A substrate processing apparatus 100 according to an embodiment of the present disclosure will be described below with reference to Figures 1 to 4. The substrate processing apparatus according to this embodiment is configured to mainly perform oxidation treatment on a film or base formed on a substrate surface.

[0010] <Processing chamber> The substrate processing apparatus 100 includes a processing furnace 202 for plasma processing a substrate 200. The processing furnace 202 is provided with a processing container 203 that constitutes a processing chamber 201. The processing container 203 includes a dome-shaped upper container 210 and a bowl-shaped lower container 211. The processing chamber 201 is formed by the upper container 210 covering the lower container 211.

[0011] 1, the processing chamber 201 has a plasma generation space 201a and a substrate processing space 201b. The plasma generation space 201a is a space within a range where a resonant coil 212, which is a coil serving as an electrode, is provided around the plasma generation space 201a, and is a space where plasma is generated. The plasma generation space 201a is a space within the processing chamber 201 that is above the lower end of the resonant coil 212 and below the upper end of the resonant coil 212. The substrate processing space 201b is connected to the plasma generation space 201a and is a space where the substrate 200 is processed. The substrate processing space 201b is a space where the substrate is processed using plasma, and is a space below the lower end of the resonant coil 212.

[0012] In this embodiment, for example, the horizontal diameter of the plasma generating space 201a and the horizontal diameter of the substrate processing space 201b are configured to be approximately the same.

[0013] The structure forming the plasma generation space 201a is also called a plasma generation chamber, and the structure forming the substrate processing space 201b is also called a substrate processing chamber.

[0014] The plasma generation space 201a may be rephrased as a plasma generation region within the processing chamber 201. The substrate processing space 201b may be rephrased as a substrate processing region within the processing chamber 201.

[0015] 1, the upper vessel 210 has a cylindrical side wall portion 210a and a ceiling portion 210b. The ceiling portion 210b is a portion that protrudes radially inward from the upper end of the side wall portion 210a. An opening portion 210c is formed in the center of the ceiling portion 210b. A light-transmitting window 278 made of a transparent material is attached to the opening portion 210c. The light-transmitting window 278 is disposed opposite the upper surface of a susceptor 217, which will be described later.

[0016] 1, a flange 210d is provided at the lower end of the upper container 210. This flange 210d is a portion that protrudes radially outward from the lower end of the side wall portion 210a, and is formed in an annular shape along the circumferential direction of the side wall portion 210a. An annular manifold 300 is joined to this flange 210d from below. When the manifold 300 is joined to the flange 210d, the gap between the flange 210d and the manifold 300 is sealed. A seal member (for example, an O-ring) may be used to seal the gap between the flange 210d and the manifold 300.

[0017] As shown in Fig. 1, the ceiling portion 210b having the opening 210c is a portion that protrudes radially inward from the upper end of the side wall portion 210a. In other words, the ceiling portion 210b can be considered a flange provided at the upper end of the upper container 210. An annular manifold 302 is joined to this ceiling portion 210b from above. When the manifold 302 is joined to the ceiling portion 210b, the gap between the ceiling portion 210b and the manifold 302 is sealed. A seal member (e.g., an O-ring) may be used to seal the gap between the ceiling portion 210b and the manifold 302.

[0018] The upper vessel 210 may be made of, for example, quartz. The lower vessel 211 may be made of, for example, aluminum (Al). A gate valve 244 is provided on the lower side of the sidewall of the lower vessel 211.

[0019] 1, a susceptor 217 serving as a substrate mounting table for mounting a substrate 200 is disposed at the center of the bottom side of the processing chamber 201. The susceptor 217 is disposed below the resonance coil 212 within the processing chamber 201. Specifically, the susceptor 217 is disposed in a substrate processing space 201b within the processing chamber 201.

[0020] <Susceptor> A susceptor heater 217b is integrally embedded inside the susceptor 217. The susceptor heater 217b is configured to be able to heat the substrate 200 when power is supplied from a heater power adjustment mechanism 276.

[0021] The susceptor 217 is electrically insulated from the lower chamber 211. The impedance adjustment electrode 217c is provided inside the susceptor 217 in order to further improve the uniformity of the density of the plasma generated on the substrate 200 placed on the susceptor 217. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275 serving as an impedance adjustment unit.

[0022] The susceptor 217 is provided with a susceptor lifting mechanism 268 having a drive mechanism for raising and lowering the susceptor 217. Furthermore, the susceptor 217 is provided with through holes 217a, and substrate lifting pins 266 are provided on the bottom surface of the lower vessel 211. When the susceptor 217 is lowered by the susceptor lifting mechanism 268, the substrate lifting pins 266 are configured to pass through the through holes 217a. The drive mechanism of the susceptor lifting mechanism 268 is controlled by a controller 291, which will be described later, to lift and lower the susceptor 217. The controller 291 is configured to be able to control the drive mechanism of the susceptor lifting mechanism 268 so that the substrate 200 is positioned below the plasma generation space 201a when processing the substrate 200 placed on the upper surface (an example of a substrate placement surface) of the susceptor 217.

[0023] <Lamp heater> A lamp heater 280 serving as a heater is provided in a position facing the upper surface of the susceptor 217 in the processing chamber 201. The lamp heater 280 is disposed above the processing chamber 201, that is, outside a transmission window 278 attached to the upper vessel 210 when viewed from the processing chamber 201. The lamp heater 280 is configured to radiate light from above (i.e., from above) the transmission window 278 to the substrate 200 accommodated in the processing chamber 201, thereby heating the substrate 200. Specifically, the lamp heater 280 is attached to the center of a lid 233. An outer periphery of the lid 233 is joined to a manifold 302. That is, the lid 233 to which the lamp heater 280 is attached is joined to the upper vessel 210 via the manifold 302. A sealing material (not shown) is disposed between the lid 233 and the manifold 302.

[0024] As shown in FIG. 2, the lamp heater 280 includes a heating portion 310, a holder 320, a housing 330, and a thermal attenuation portion 340.

[0025] 2, the heating section 310 includes at least a lamp 312 and a housing 314. A socket 316 may also be included in the heating section.

[0026] The lamp 312 has a function of irradiating light onto and heating the substrate 200 in the processing chamber 201. The lamp 312 is, for example, a halogen lamp. The lamp 312 has a quartz bulb 312b containing a filament 312a, and halogen gas, for example, sealed in the bulb 312b.

[0027] The storage section 314 stores lamp wiring 313 as a second wiring connected to the lamp 312. The storage section 314 is formed continuously from the bulb 312b to seal the bulb 312b so that halogen gas does not leak out. In this embodiment, as an example, the storage section 314 is made of quartz. The storage section 314 also stores the lamp wiring 313 that is electrically connected to the filament 312a. For example, molybdenum foil may be used as the lamp wiring 313. The lamp wiring 313 is electrically connected to a plug 315 that protrudes from the storage section 314.

[0028] Socket 316 is connected to storage section 314 of lamp 312 and supplies current to lamp 312. Socket 316 is provided with socket hole 317 for inserting plug 315. Socket 316 also houses socket wiring 318 therein as a first wiring. Socket wiring 318 is electrically connected to socket hole 317.

[0029] The socket 316 is made of an insulating material, such as ceramic.

[0030] When the plug 315 of the lamp 312 is inserted into the socket hole 317, the lamp wiring 313 and the socket wiring 318 are electrically connected. That is, the lamp 312 and the socket 316 are electrically connected. When a current is supplied from an external power source (not shown) to the socket wiring 318, the current is supplied to the lamp wiring 313 via the socket 316.

[0031] In this embodiment, as an example, the electrical connection between the lamp 312 and the socket 316 is established by inserting the plug 315 into the socket hole 317, but the present disclosure is not limited to this configuration. For example, the electrical connection may be established by screwing the lamp 312 into the socket 316, as in a household incandescent light bulb.

[0032] In this embodiment, at least a portion of the outer periphery of each of the storage portion 314 and the socket 316 is covered by the first portion 322 of the holder 320 .

[0033] The socket wiring 318 is covered with a protective material 319. An example of this protective material 319 is glass wool. The socket wiring 318 is in contact with a second portion 324 of the holder 320 via the protective material 319.

[0034] The outer periphery of the storage section 314 is covered with a heat transfer member 350. The storage section 314 is in contact with the first portion 322 of the holder 320 via the heat transfer member 350. The heat transfer member 350 may also cover the outer periphery of the socket 316, as shown in FIG.

[0035] The heat transfer member 350 may be disposed between the storage section 314 and the first portion 322 of the holder 320, and may be fixed to the outer peripheral surface of the storage section 314 or to the inner peripheral surface of the first portion 322.

[0036] The thermal conductivity of the heat transfer member 350 is higher than the thermal conductivity of the thermal attenuation portion 340. An example of such a heat transfer member 350 is aluminum foil.

[0037] 2, the holder 320 is a member that holds the storage portion 314 and the socket 316 in the heating portion 310. The holder 320 includes a first portion 322 and a second portion 324.

[0038] The first portion 322 is a portion of the holder 320 that covers the outer periphery of the storage portion 314. In the present embodiment, the first portion 322 covers the entire outer periphery of the storage portion 314, but the present disclosure is not limited to this configuration, and the first portion 322 may cover only a portion of the outer periphery of the storage portion 314.

[0039] The second portion 324 is a portion of the holder 320 that is in contact with and supported by the support portion 334 of the housing 330. Specifically, the second portion 324 is a portion that protrudes outward from the portion of the first portion 322 opposite the lamp 312, and is a portion that is supported by the support portion 334 of the housing 330. The second portion 324 is continuous with the first portion 322. That is, the second portion 324 and the first portion 322 are integrated.

[0040] Furthermore, first portion 322 of holder 320 is inserted into insertion portion 332 (described later) of housing 330 in a non-contact state. Specifically, the outer diameter of first portion 322 is smaller than the inner diameter of insertion portion 332, and a gap S is formed between the outer peripheral surface of first portion 322 and the inner peripheral surface of insertion portion 332. Gap S is formed along the insertion direction of first portion 322 of holder 320 into insertion portion 332. The insertion direction of first portion 322 into insertion portion 332 is the direction indicated by arrow I in FIG. 2.

[0041] Furthermore, the first portion 322 of the holder 320 has a function of absorbing heat from the storage portion 314 and the socket 316. The holder 320 is made of a material with high thermal conductivity. An example of a material with high thermal conductivity is aluminum. In this embodiment, as an example, the holder 320 is made of aluminum.

[0042] 2, the housing 330 is a base portion of the lamp heater 280, and is provided above the processing chamber 201. A lamp module 360, which will be described later, is attached to the housing 330. The housing 330 includes an insertion portion 332 and a support portion 334. In this embodiment, as an example, a plurality of lamp modules 360 are attached to the housing 330.

[0043] The insertion portion 332 is a portion of the housing 330 into which the first portion 322 of the holder 320 is inserted in a non-contact state. Specifically, the insertion portion 332 is a through hole provided in the housing 330. When the holder 320 is inserted into the insertion portion 332, an annular gap S is formed between the outer peripheral surface of the first portion 322 and the inner peripheral surface of the insertion portion 332.

[0044] At least one of the outer circumferential surface of the first portion 322 of the holder 320 and the inner circumferential surface of the insertion portion 332 may be configured to have a higher thermal emissivity than a portion of the first portion 322 where the thermal attenuation portion 340 is provided. Specifically, at least one of the outer circumferential surface of the first portion 322 of the holder 320 and the inner circumferential surface of the insertion portion 332 may be anodized.

[0045] The support portion 334 is a portion of the housing 330 that supports the second portion 324 of the holder 320. Specifically, the support portion 334 is an annular portion provided on the periphery of the insertion portion 332. The support portion 334 may be formed integrally with the housing 330, or may be configured by fixing an annular member onto the periphery of the insertion portion 332. In the present embodiment, as an example, the support portion 334 is configured by fixing an annular member onto the periphery of the insertion portion 332.

[0046] In the present embodiment, as an example, the second portion 324 of the holder 320 is attached to the housing 330 with a screw member (not shown) via the support portion 334. When the holder 320 is attached to the housing 330, the first portion 322 is inserted into the insertion portion 332 in a non-contact state.

[0047] The support portion 334 is configured to absorb more heat than the thermal attenuation portion 340. Specifically, the housing 330 including the support portion 334 is made of a material with a higher thermal conductivity than the thermal attenuation portion 340. In the present embodiment, as an example, the housing 330 including the support portion 334 is made of aluminum, similar to the holder 320.

[0048] Furthermore, a coolant flow path 336 through which a coolant flows may be provided inside the housing 330.

[0049] 2, the thermal attenuation section 340 is provided on the lamp 312 side of the first section 322 of the holder 320, and has the function of attenuating heat generated by light emitted from the lamp 312 to suppress heat transfer (heat movement) to the holder 320, the lamp wiring 313, and the socket wiring 318. Specifically, the thermal attenuation section 340 attenuates the light emitted from the lamp 312, thereby attenuating heat generated by the light and suppressing temperature increases in the holder 320, the lamp wiring 313, and the socket wiring 318. Furthermore, by attenuating the heat generated by the light, the thermal attenuation section 340 can form a heat conduction path HP that conducts heat from the storage section 314 to the housing 330 through the first section 322, the second section 324, and the support section 334.

[0050] The heat damping portion 340 is provided at the end of the first portion 322 on the lamp 312 side, i.e., the lower end. The heat damping portion 340 may be formed by processing the surface of the end of the first portion 322, or may be provided by attaching a member that serves as the heat damping portion 340 to the end of the first portion 322, or may be provided by applying a heat damping material.

[0051] Furthermore, a plurality of combinations of heating unit 310 and holder 320 are attached to housing 330. The difference in thermal decay rate of each of thermal decay units 340 provided on each of the plurality of holders 320 may be configured to fall within a predetermined range. In this embodiment, as an example, each of the thermal decay units 340 may be configured to have the same (substantially the same) thermal decay rate.

[0052] 3, a plurality of combinations of heating units 310 and holders 320 are arranged circumferentially around the substrate 200 in the horizontal direction, with the substrate 200 supported in the process chamber 201. In the present embodiment, as an example, a plurality of combinations of heating units 310 and holders 320 are arranged circumferentially at equal intervals around the substrate 200. The thermal decay rates of the thermal decay units 340 provided on at least the holders 320 arranged on the same circumference may be configured to be the same (substantially the same). When the holders 320 are arranged on the outer and inner circumferences as shown in FIG. 3, the decay rates may be different between the outer and inner circumferences.

[0053] In this embodiment, the heating unit 310, the holder 320, and the thermal attenuation unit 340 constitute a lamp module 360. A plurality of lamp modules 360 are attached to a plurality of insertion portions 332 provided in the housing 330.

[0054] The holder 320 of this embodiment may be made up of a plurality of members. For example, the holder 320 may be configured by assembling two holder halves that are split vertically.

[0055] <Gas supply section> The gas supply unit 120 that supplies the processing gas into the processing vessel 203 is configured as follows.

[0056] A gas supply head 236 is provided above the processing chamber 201, i.e., on top of the upper vessel 210. The gas supply head 236 includes a cap-shaped lid 233, a gas inlet 234, a buffer chamber 237, and a gas outlet 239, and is configured to supply a reactive gas into the processing chamber 201. The gas outlet 239 is provided in a transmission window 278.

[0057] The downstream end of an oxygen-containing gas supply pipe 232a that supplies an oxygen-containing gas, the downstream end of a hydrogen-containing gas supply pipe 232b that supplies a hydrogen-containing gas, and the downstream end of an inert gas supply pipe 232c that supplies an inert gas are connected to the gas inlet 234 so that they converge at the junction pipe 232. The oxygen-containing gas supply pipe 232a is also simply called the gas supply pipe 232a. The hydrogen-containing gas supply pipe 232b is also simply called the gas supply pipe 232b. The inert gas supply pipe 232c is also simply called the gas supply pipe 232c.

[0058] The gas supply pipe 232a is provided with, in order from the upstream side, an oxygen-containing gas supply source 250a, a mass flow controller (MFC) 252a as a flow rate control device, and a valve 253a as an opening / closing valve.

[0059] The gas supply pipe 232b is provided with a hydrogen-containing gas supply source 250b, an MFC 252b, and a valve 253b in this order from the upstream side.

[0060] The gas supply pipe 232c is provided with an inert gas supply source 250c, an MFC 252c, and a valve 253c in this order from the upstream side.

[0061] A valve 243a is provided downstream of the junction pipe 232 where the gas supply pipe 232a, the gas supply pipe 232b, and the gas supply pipe 232c join, and is connected to the gas inlet 234. By opening and closing the valves 253a, 253b, 253c, and 243a, the flow rates of the respective gases can be adjusted by the MFCs 252a, 252b, and 252c, and a process gas obtained by merging the oxygen-containing gas, the hydrogen-containing gas, and the inert gas can be supplied into the process chamber 201 via the gas supply pipes 232a, 232b, and 232c.

[0062] The gas supply unit 120 (gas supply system) according to this embodiment is mainly configured by the gas supply pipe 232a, the gas supply pipe 232b, the gas supply pipe 232c, the MFCs 252a, 252b, and 252c, and the valves 253a, 253b, 253c, and 243a.

[0063] <Exhaust section> A gas exhaust port 235 for exhausting a reaction gas from inside the processing chamber 201 is provided on a sidewall of the lower vessel 211. The upstream end of a gas exhaust pipe 231 is connected to the gas exhaust port 235. The gas exhaust pipe 231 is provided with, in this order from the upstream side, an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure adjustment unit), a valve 243b as an opening / closing valve, and a vacuum pump 246 as a vacuum exhaust device.

[0064] The exhaust unit according to this embodiment is mainly composed of the gas exhaust port 235, the gas exhaust pipe 231, the APC valve 242, and the valve 243b. Note that a vacuum pump 246 may also be included in the exhaust unit.

[0065] <Plasma generation unit> A spiral resonant coil 212 is arranged on the outer periphery of the processing chamber 201, i.e., on the outside of the sidewall of the upper vessel 210, so as to surround the processing chamber 201. In other words, the resonant coil 212 is arranged so as to surround the outer periphery (outer periphery of the plasma generation chamber) of a portion (region) in the processing vessel 203 (upper vessel 210) corresponding to the plasma generation space 201a.

[0066] An RF sensor 272, a high-frequency power supply 273, and a matching box 274 that matches the impedance and output frequency of the high-frequency power supply 273 are connected to the resonant coil 212. The resonant coil 212 is disposed along the outer circumferential surface of the processing vessel 203 at a distance from the outer circumferential surface, and is configured to generate an electromagnetic field in the processing vessel 203 when high-frequency power (RF power) is supplied to the resonant coil 212. That is, the resonant coil 212 in this embodiment is an electrode of an inductively coupled plasma (ICP) system.

[0067] High frequency power supply 273 supplies high frequency power (RF power) to resonance coil 212. RF sensor 272 is provided on the output side of high frequency power supply 273 and monitors information on the supplied high frequency traveling waves and reflected waves. The reflected wave power monitored by RF sensor 272 is input to matching device 274. Based on the information on the reflected wave input from RF sensor 272, matching device 274 controls the impedance of high frequency power supply 273 and the frequency of the RF power to be output so as to minimize the reflected wave.

[0068] The resonant coil 212 has a winding diameter, a winding pitch, and a number of turns that are set so as to resonate at a constant wavelength in order to form a standing wave of a predetermined wavelength.

[0069] Both ends of resonance coil 212 are electrically grounded, and at least one end of the ends is grounded via movable tap 213 in order to finely adjust the electrical length of resonance coil 212. The other end of resonance coil 212 is grounded via fixed ground 214. The position of movable tap 213 is adjusted so that the resonance characteristics of resonance coil 212 are approximately equal to those of high-frequency power supply 273. Furthermore, in order to finely adjust the impedance of resonance coil 212, a power supply section is formed between the grounded ends of resonance coil 212 by movable tap 215.

[0070] Shielding plate 223 is provided to shield the electric field outside resonance coil 212. Shielding plate 223 is configured in a cylindrical shape, and is configured using a conductive material such as an aluminum alloy.

[0071] The plasma generating unit according to this embodiment is mainly constituted by the resonant coil 212, the RF sensor 272, and the matching box 274. Note that a high frequency power supply 273 may also be included as the plasma generating unit.

[0072] In this embodiment, as an example, the resonant coil 212, which is an ICP type electrode, is used as an electrode for generating an electromagnetic field in the processing chamber 201 (plasma generation space 201a), but the present disclosure is not limited to this configuration. For example, a modified magnetron type (MMT) cylindrical electrode may also be used.

[0073] <Control unit> 4, a controller 291, which is a control unit (control means) of the substrate processing apparatus 100, is configured as a computer including a CPU (Central Processing Unit) 291a, a RAM (Random Access Memory) 291b, a storage device 291c, and an I / O port 291d. The RAM 291b, the storage device 291c, and the I / O port 291d are configured to be able to exchange data with the CPU 291a via an internal bus 291e. An input / output device 292, which is configured as, for example, a touch panel or a display, is connected to the controller 291.

[0074] The storage device 291c is configured with, for example, a flash memory, an HDD (Hard Disk Drive), etc. The storage device 291c readably stores a control program for controlling the operation of the substrate processing apparatus, a program recipe describing the procedures and conditions of the substrate processing described later, etc. The process recipe is a combination of procedures in the substrate processing process described later that are executed by the controller 291 to obtain a predetermined result, and functions as a program. Hereinafter, the program recipe, control program, etc. are collectively referred to simply as a program. Note that, when the term "program" is used in this disclosure, it may include only the program recipe, only the control program, or both. The RAM 291b is configured as a memory area (work area) in which programs, data, etc. read by the CPU 291a are temporarily stored.

[0075] The I / O port 291d is connected to the above-mentioned MFCs 252a to 252c, valves 253a to 253c, valves 243a, 243b, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching box 274, susceptor lifting mechanism 268, impedance variable mechanism 275, heater power adjustment mechanism 276, etc.

[0076] The CPU 291a is configured to read and execute a control program from the storage device 291c and to read a process recipe from the storage device 291c in response to an input of an operation command from the input / output device 292. The CPU 291a is configured to control the opening adjustment operation of the APC valve 242, the opening / closing operation of the valve 243b, and the start / stop of the vacuum pump 246 through the I / O port 291d and signal line A in accordance with the content of the read process recipe. The CPU 291a is also configured to control the lifting operation of the susceptor lifting mechanism 268 through signal line B in accordance with the content of the process recipe. The CPU 291a is also configured to control the adjustment of the amount of power supplied to the susceptor heater 217b (temperature adjustment operation) by the heater power adjustment mechanism 276 and the impedance value adjustment operation by the impedance variable mechanism 275 in accordance with the content of the process recipe in accordance with the content of the process recipe in accordance with the content of the process recipe. The CPU 291a is also configured to be able to control the opening and closing operation of the gate valve 244 via a signal line D in accordance with the contents of the process recipe. The CPU 291a is also configured to be able to control the operations of the RF sensor 272, the matching box 274, and the high-frequency power supply 273 via a signal line E in accordance with the contents of the process recipe. The CPU 291a is also configured to be able to control the flow rate adjustment operation of various gases by the MFCs 252a to 252c, and the opening and closing operation of the valves 253a to 253c and 243a in accordance with the contents of the process recipe, via a signal line F. The CPU 291a may also control the operation of apparatus components other than those described above.

[0077] The controller 291 can be configured by installing the above-mentioned program stored in an external storage device (for example, a magnetic disk such as a magnetic tape, a flexible disk, or a hard disk; an optical disk such as a CD or a DVD; a magneto-optical disk such as an MO; or a semiconductor memory such as a USB memory or a memory card) 293 into a computer. The storage device 291c and the external storage device 293 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this disclosure, when the term "recording medium" is used, it may include only the storage device 291c alone, only the external storage device 293 alone, or both. Note that the program may be provided to the computer using a communication means such as the Internet or a dedicated line, without using the external storage device 293.

[0078] (2) Substrate processing process Next, a substrate processing process according to an embodiment of the present disclosure will be described mainly with reference to FIG. 5. FIG. 5 is a flow diagram showing the substrate processing process according to this embodiment. The substrate processing process according to this embodiment is performed by the above-described substrate processing apparatus 100 as one step in a manufacturing process for semiconductor devices such as flash memories. In the following description, the operation of each component of the substrate processing apparatus 100 is controlled by a controller 291.

[0079] A silicon layer is formed beforehand on the surface of the substrate 200 to be processed in the substrate processing step according to this embodiment. In this embodiment, the silicon layer is subjected to an oxidation process using plasma.

[0080] (Substrate loading process S110) First, the susceptor lifting mechanism 268 lowers the susceptor 217 to a transfer position for the substrate 200, and the substrate lifting pins 266 penetrate the through holes 217a of the susceptor 217. Next, the gate valve 244 is opened, and the substrate 200 is loaded into the processing chamber 201 from a vacuum transfer chamber adjacent to the processing chamber 201 using a substrate transfer mechanism (not shown). The loaded substrate 200 is supported in a horizontal position on the substrate lifting pins 266 protruding from the surface of the susceptor 217. Then, the susceptor lifting mechanism 268 raises the susceptor 217, so that the substrate 200 is supported on the upper surface of the susceptor 217.

[0081] (Heating and evacuation process S120) Next, the temperature of the substrate 200 loaded into the processing chamber 201 is increased. Here, the susceptor heater 217b is preheated, and the lamp heater 280 is turned on to increase the temperature of the substrate 200 held on the susceptor 217. At this time, most of the light emitted from the lamp heater 280 for heating the substrate 200 is reflected into the processing chamber 201 without being absorbed by the upper vessel 210, as will be described later, and is absorbed by the substrate 200, thereby efficiently heating the substrate 200. During the temperature increase of the substrate 200, the processing chamber 201 is evacuated by the vacuum pump 246 via the gas exhaust pipe 231 to set the pressure inside the processing chamber 201 to a predetermined value. The vacuum pump 246 is kept operating at least until the substrate unloading step S160, which will be described later, is completed.

[0082] (Reaction gas supply process S130) Next, the supply of an oxygen-containing gas and a hydrogen-containing gas as reactive gases is started. Specifically, the valves 253a and 253b are opened, and the supply of the oxygen-containing gas and the hydrogen-containing gas into the processing chamber 201 is started while controlling the flow rates with the MFCs 252a and 252b.

[0083] Furthermore, the opening of the APC valve 242 is adjusted to control exhaust from the processing chamber 201 so that the pressure inside the processing chamber 201 becomes a predetermined value. In this way, while the processing chamber 201 is appropriately exhausted, the supply of the oxygen-containing gas and the hydrogen-containing gas continues until the end of the plasma processing step S140, which will be described later.

[0084] (Plasma treatment step S140) Once the pressure in the processing chamber 201 has stabilized, application of high-frequency power from the high-frequency power supply 273 to the resonant coil 212 begins. This forms a high-frequency electric field in the plasma generation space 201a to which the oxygen-containing gas and the hydrogen-containing gas are supplied. This high-frequency electromagnetic field excites a donut-shaped induction plasma having the highest plasma density at a height position corresponding to the electrical midpoint of the resonant coil 212 in the plasma generation space 201a. The processing gas containing the oxygen-containing gas and the hydrogen-containing gas in the plasma state is plasma-excited and dissociated, generating reactive species such as oxygen radicals (oxygen activated species) and oxygen ions containing oxygen, and hydrogen radicals (hydrogen activated species) and hydrogen ions containing hydrogen.

[0085] Radicals and unaccelerated ions generated by the induced plasma are uniformly supplied to the surface of the substrate 200 held on the susceptor 217 in the substrate processing space 201b. The supplied radicals and ions react uniformly with the silicon layer on the surface, modifying the silicon layer into a silicon oxide layer with good step coverage.

[0086] After that, when a predetermined processing time has elapsed, the power output from the high frequency power supply 273 is stopped to stop the plasma discharge in the processing chamber 201. Furthermore, the valves 253a and 253b are closed to stop the supply of the oxygen-containing gas and the hydrogen-containing gas into the processing chamber 201. This completes the plasma processing step S140.

[0087] (Vacuum evacuation process S150) After the supply of the oxygen-containing gas and the hydrogen-containing gas is stopped, the processing chamber 201 is evacuated to a vacuum via the gas exhaust pipe 231. This allows the oxygen-containing gas and the hydrogen-containing gas in the processing chamber 201, as well as exhaust gases generated by the reaction of these gases, to be exhausted to the outside of the processing chamber 201. Thereafter, the aperture of the APC valve 242 is adjusted to adjust the pressure in the processing chamber 201 to the same pressure as that of a vacuum transfer chamber (not shown) adjacent to the processing chamber 201. The vacuum transfer chamber is the destination to which the substrate 200 is transferred.

[0088] (Substrate unloading process S160) When the inside of the processing chamber 201 reaches a predetermined pressure, the susceptor 217 is lowered to the transfer position of the substrate 200, and the substrate 200 is supported on the substrate lift-up pins 266. Then, the gate valve 244 is opened, and the substrate 200 is transferred out of the processing chamber 201 using the substrate transfer mechanism. This completes the substrate processing process according to this embodiment.

[0089] According to this embodiment, one or more of the following effects are achieved.

[0090] In this embodiment, heat generated by light emitted from the lamp 312 is attenuated by the thermal attenuation portion 340 provided in the first portion 322 of the holder 320, thereby preventing excessive temperature rise in the first portion 322. Therefore, the temperature relationship among the various portions can be as follows: storage portion 314 > first portion 322 > second portion 324 > support portion 334 > housing 330. As a result, heat from the lamp wiring 313 generated by light emission from the lamp 312 is transferred to the first portion 322 of the holder 320 via the storage portion 314. The heat transferred to the first portion 322 of the holder 320 is transferred to the second portion 324. The heat transferred to the second portion 324 is dissipated from the second portion 324 to the housing 330 via the support portion 334. In other words, the above-described heat conduction path HP is formed, through which heat passes from the storage portion 314 through the first portion 322, the second portion 324, the support portion 334, and the housing 330. In this embodiment, since the housing 330 is cooled by the refrigerant flow path 336, the lamp wiring 313 is cooled efficiently.

[0091] Furthermore, in this embodiment, the heat generated by the light emitted from the lamp 312 is attenuated by the heat attenuation portion 340 provided in the first portion 322 of the holder 320. Therefore, in this embodiment, it is possible to suppress a temperature rise in the first portion 322 compared to, for example, a configuration in which the heat generated by the light emitted from the lamp 312 moves to the first portion 322 without being attenuated.

[0092] Furthermore, in this embodiment, first portion 322 of holder 320 is inserted into insertion portion 332 in a non-contact state, and in this state, second portion 324 of holder 320 is supported by support portion 334 of housing 330. Therefore, in this embodiment, friction is less likely to occur between first portion 322 and insertion portion 332 compared to a configuration in which first portion 322 is inserted into insertion portion 332 in a contact state, making it easier to insert and remove first portion 322 into and from insertion portion 332.

[0093] As described above, according to this embodiment, it is possible to easily insert and remove holder 320 of lamp 312 into and from insertion portion 332 of housing 330, while suppressing a rise in temperature of holder 320 when lamp 312 emits light.

[0094] In this embodiment, heat generated in the socket wiring 318 due to light emission from the lamp 312 is transferred from the first portion 322 of the holder 320 to the second portion 324 and to the support portion 334 of the housing 330 via the socket 316, and is then dissipated. This makes it possible to suppress a temperature rise in the holder 320 when the lamp 312 emits light.

[0095] In this embodiment, when the lamp wire 313 is configured to contact the second part 324 of the holder 320 via the protective material 319, the heat of the socket wire 318 can be transferred directly to the second part 324. This allows the socket wire 318 to be cooled efficiently.

[0096] In this embodiment, a gap S is formed between the outer peripheral surface of the first portion 322 of the holder 320 and the inner peripheral surface of the insertion portion 332, making it easier to insert and remove the holder 320 of the lamp 312 into the insertion portion 332 of the housing 330, compared to a configuration in which other components are packed into the gap S, for example.

[0097] In this embodiment, the gap S is formed along the insertion direction I of the first portion 322 relative to the insertion portion 332, which enables the first portion 322 to dissipate heat uniformly in the insertion direction I of the insertion portion 332.

[0098] In this embodiment, heat from the storage section 314 is transferred to the first portion 322 via the heat transfer member 350, so that heat from the lamp wiring 313 of the storage section 314 can be dissipated efficiently.

[0099] In this embodiment, the thermal attenuation portion 340 is provided at the end of the first portion 322 on the lamp 312 side, so that heat generated by light emitted from the lamp 312 is less likely to be transmitted from the first portion 322 to the second portion 324 of the holder 320.

[0100] In this embodiment, when at least one of the outer peripheral surface of the first portion 322 of the holder 320 and the inner peripheral surface of the insertion portion 332 is anodized, the thermal emissivity becomes higher than that of the portion of the first portion 322 where the thermal attenuation portion 340 is provided, and the amount of heat transfer by radiation increases.

[0101] In this embodiment, when at least one of the outer surface of the first portion 322 of the holder 320 and the inner surface of the insertion portion is configured to have a higher thermal emissivity than the portion where the thermal attenuation portion 340 is provided, the thermal emissivity can be made higher in the first portion 322 than the portion where the thermal attenuation portion 340 is provided, and the amount of heat transfer by radiation increases.

[0102] In this embodiment, when the amount of heat absorption in the support portion 334 is configured to be greater than the amount of heat absorption in the thermal attenuation portion 340, the heat that has moved from the first portion 322 to the second portion 324 of the holder 320 can be efficiently transferred to the support portion 334.

[0103] In this embodiment, when the thermal conductivity of the heat transfer member 350 is configured to be higher than the thermal conductivity of the thermal attenuation portion 340, it becomes possible to efficiently transfer heat from the storage portion 314 to the support portion 334 from the first portion 322 through the second portion 324.

[0104] In this embodiment, when the difference in the thermal decay rate of each thermal decay section 340 is kept within a predetermined range, it is possible to suppress the progression of deterioration of a specific wiring. In this case, it is possible to achieve uniform heating of the substrate 200.

[0105] In this embodiment, when the thermal decay rates of the thermal decay sections 340 are configured to be the same (substantially the same), the degree of deterioration can be made the same, so that uniform heating of the substrate 200 can be achieved.

[0106] In this embodiment, the thermal decay rates of the thermal decay units 340 provided on each of the holders 320 arranged circumferentially around the substrate 200 are configured to be the same (substantially the same), thereby making it possible to uniformize the heating capacity around the substrate 200. Note that in a substrate processing apparatus that supplies gas from above the substrate 200 and exhausts gas from the periphery of the substrate 200, variations in substrate processing may occur concentrically. For example, variations in substrate processing may occur between the center and the periphery of the substrate. Therefore, by using the above configuration of this embodiment, it is possible to control the heating of the substrate 200 at least on a circumferential basis, thereby absorbing variations in substrate processing. For example, the center of the substrate 200 may be heated strongly and the periphery of the substrate 200 may be heated weakly.

[0107] <Other Embodiments of the Present Disclosure> Furthermore, in the above-described embodiment, the processing chamber 201 formed by the processing vessel 203 has a plasma generation chamber and a substrate processing chamber (i.e., the plasma generation chamber and the substrate processing chamber are configured as the internal space of the same processing vessel 203), but the present disclosure is not limited to this configuration. For example, the plasma generation chamber and the substrate processing chamber may each be configured as separate vessels. Note that in the above-described embodiment, the upper vessel 210 is an example of a processing vessel in the present disclosure, but the present disclosure is not limited to this configuration. For example, if the processing vessel 203 is an integrally molded product, the integrally molded processing vessel 203 is an example of a processing vessel in the present disclosure.

[0108] In the above embodiment, an example of performing an oxidation treatment on a substrate surface using plasma has been described, but the present invention may also be applied to a nitriding treatment using a nitrogen-containing gas as a treatment gas. Furthermore, the present invention is not limited to nitriding and oxidation treatments, and may be applied to any technique of performing a treatment on a substrate using plasma. For example, the present invention may be applied to a modification treatment of a film formed on a substrate surface using plasma, a doping treatment, a reduction treatment of an oxide film, an etching treatment of the film, and an ashing treatment of a resist.

[0109] Although the present disclosure has been described in detail with respect to specific embodiments and modifications, it will be apparent to those skilled in the art that the present disclosure is not limited to such embodiments and modifications, and that various other embodiments are possible within the scope of the present disclosure. [Explanation of symbols]

[0110] 200 boards 201 Processing Room 312 Lamp 314 Storage section 320 Holder 322 First part 324 Second part 330 cabinet 332 Insertion section 334 Support part 340 Thermal damping section HP Thermal Path

Claims

1. a processing chamber for processing a substrate; a heating unit including a lamp that irradiates light onto the substrate in the processing chamber to heat it, and a storage unit that stores wiring connected to the lamp; a holder including a first portion that covers an outer periphery of the storage portion, and a second portion that protrudes outward from a portion of the first portion opposite the lamp; a housing provided above the processing chamber, the housing including an insertion portion into which the first portion is inserted in a non-contact state and a support portion that supports the second portion; a thermal attenuation portion provided on a portion of the first portion facing the lamp, the thermal attenuation portion attenuating heat generated by light emitted from the lamp and enabling the formation of a heat conduction path for conducting heat from the storage portion to the housing through the first portion, the second portion, and the support portion; A substrate processing apparatus having:

2. the heating unit further includes a socket whose outer periphery is at least partially covered by the first portion, The socket accommodates a first wiring therein, and the accommodation portion is connected to the socket. When the accommodation portion is connected, the first wiring and a second wiring serving as the wiring are electrically connected to each other. The substrate processing apparatus according to claim 1 .

3. The substrate processing apparatus according to claim 2 , wherein the second wiring is covered with a protective material and is configured to come into contact with the second portion via the protective material.

4. A gap is formed between the outer peripheral surface of the first portion and the inner peripheral surface of the insertion portion. The substrate processing apparatus according to claim 1 .

5. The gap is formed along the insertion direction of the first portion relative to the insertion portion. The substrate processing apparatus according to claim 4 .

6. The outer periphery of the storage section is covered with a heat transfer member, The storage section is in contact with the first portion via a heat transfer member. The substrate processing apparatus according to claim 1 .

7. The thermal attenuation portion is provided at an end of the first portion on the lamp side. The substrate processing apparatus according to claim 1 .

8. At least one of the outer peripheral surface of the first portion and the inner peripheral surface of the insertion portion is anodized. The substrate processing apparatus according to claim 4 .

9. At least one of an outer circumferential surface of the first portion and an inner circumferential surface of the insertion portion is configured to have a higher thermal emissivity than a portion where the thermal attenuation portion is provided. The substrate processing apparatus according to claim 4 .

10. The amount of heat absorption in the support portion is The amount of heat absorbed by the heat attenuation portion is greater than the amount of heat absorbed by the heat attenuation portion. The substrate processing apparatus according to claim 1 .

11. The thermal conductivity of the heat transfer member is The thermal conductivity is configured to be higher than that of the thermal attenuation portion. The substrate processing apparatus according to claim 6 .

12. a plurality of combinations of the heating unit and the holder are attached to the housing; The difference in the thermal decay rate of each of the thermal decay sections is configured to fall within a predetermined range. The substrate processing apparatus according to claim 1 .

13. a plurality of combinations of the heating unit and the holder are attached to the housing; The thermal decay rates of the respective thermal decay sections are configured to be the same. The substrate processing apparatus according to claim 1 .

14. a plurality of combinations of the heating unit and the holder are arranged around the substrate in a horizontal direction while the substrate is supported in the processing chamber; The thermal decay rates of the thermal decay portions provided on at least each of the holders arranged circumferentially are configured to be the same. The substrate processing apparatus according to claim 1 .

15. a heating unit including a lamp for irradiating light onto a substrate in a processing chamber for processing the substrate to heat the substrate, and a storage unit for storing wiring connected to the lamp; a holder including: a first portion that covers the outer periphery of the storage portion and can be inserted in a non-contact state into an insertion portion of a housing provided on the upper side of the processing chamber; and a second portion that protrudes outward from a portion of the first portion opposite the lamp to the outer periphery and is supported by a support portion supported by the housing; a thermal attenuation portion provided on a portion of the first portion facing the lamp, the thermal attenuation portion attenuating heat generated by light emitted from the lamp and enabling the formation of a heat conduction path for conducting heat from the storage portion to the housing through the first portion, the second portion, and the support portion; A lamp module having

16. a processing chamber for processing a substrate; a heating unit including a lamp that irradiates light onto the substrate in the processing chamber to heat it, and a storage unit that stores wiring connected to the lamp; a holder including a first portion that covers an outer periphery of the storage portion, and a second portion that protrudes outward from a portion of the first portion opposite the lamp; a housing provided above the processing chamber, the housing including an insertion portion into which the first portion is inserted in a non-contact state and a support portion that supports the second portion; a thermal attenuation portion provided on a portion of the first portion facing the lamp, the thermal attenuation portion attenuating heat generated by light emitted from the lamp and enabling the formation of a heat conduction path for conducting heat from the storage portion to the housing through the first portion, the second portion, and the support portion; A heating method for heating a substrate using a substrate processing apparatus having loading a substrate into the processing chamber; operating the heating unit to heat the substrate; A heating method comprising:

17. A substrate processing method using the heating method according to claim 16.

18. A method for manufacturing a semiconductor device using the heating method according to claim 16.

19. a processing chamber for processing a substrate; a heating unit including a lamp that irradiates light onto the substrate in the processing chamber to heat it, and a storage unit that stores wiring connected to the lamp; a holder including a first portion that covers an outer periphery of the storage portion, and a second portion that protrudes outward from a portion of the first portion opposite the lamp; a housing provided above the processing chamber, the housing including an insertion portion into which the first portion is inserted in a non-contact state and a support portion that supports the second portion; a thermal attenuation portion provided on a portion of the first portion facing the lamp, the thermal attenuation portion attenuating heat generated by light emitted from the lamp and enabling the formation of a heat conduction path for conducting heat from the storage portion to the housing through the first portion, the second portion, and the support portion; a computer to a substrate processing apparatus having the loading a substrate into the processing chamber; operating the heating unit to heat the substrate; A program that executes the following.

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