Temperature control device, plasma etching device, and semiconductor manufacturing system

Abstract

To provide a temperature control device which enables improvement of responsiveness and accuracy of temperature control while reducing a size and an occupation range.SOLUTION: According to one embodiment, a temperature control device 1 includes: a valve device 2; a first fluid supply device 40 that supplies a first fluid to the valve device 2; a second fluid supply device 50 that supplies a second fluid to the valve device 2; and a supply pipe part 61 that circulates the first fluid, the second fluid, or the first fluid and the second fluid flowing out from the valve device 2. The temperature control device 1 performs temperature control by means of the fluid circulated through the supply pipe part 61. The valve device 2 includes a first valve member 10 and a second valve member 20 that are in contact with each other and can rotate relative to each other while maintaining a contact state. In response to relative rotation between the first valve member 10 and the second valve member 20, the first fluid, the second fluid, or the first fluid and the second fluid are supplied from the valve device 2 to the supply pipe part 61.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a temperature control device, a plasma etching device, and a semiconductor manufacturing system. [Background technology]

[0002] For example, when manufacturing 3D NAND flash memory, high aspect ratio etching is required.

[0003] Plasma etching equipment is generally used for high aspect ratio etching. In a plasma etching equipment, the wafer is held by an electrostatic chuck placed in a chamber, and radicals in the plasma generated in the chamber are attached to the wafer, while ions are attracted to the wafer by applying a voltage. This causes a chemical reaction between the radicals and ions on the wafer, resulting in etching of the wafer surface.

[0004] In the above-described plasma etching, ions are anisotropically attracted to the wafer by the application of voltage, which enables high-aspect-ratio etching with suppressed side etching.

[0005] However, in plasma etching systems, unless appropriate temperature control is performed according to the etching progress, the etching finish for high aspect ratios will be poor. For example, if radicals adhere to the inner surface of a hole during etching, side etching can progress, but temperature control can suppress the adhesion of radicals to the inner surface. For this reason, plasma etching systems typically control the wafer temperature. Such temperature control is achieved, for example, by passing a heat transfer medium through the electrostatic chuck. In some cases, gas is supplied between the electrostatic chuck and the wafer to adjust the thermal conductivity of the heat transferred from the electrostatic chuck to the wafer. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2023-43845 [Patent Document 2] Japanese Patent Application Publication No. 2023-65471 [Patent Document 3] Japanese Patent Publication No. 2023-002461 [Patent Document 4] Japanese Patent Application Publication No. 2023-137580 Summary of the Invention [Problem to be solved by the invention]

[0007] Temperature control patterns required in plasma etching systems include, for example, rapid switching from low temperature to high temperature, or vice versa. In this regard, many plasma etching systems use low-temperature and high-temperature refrigerants and switch the temperature zone by switching valves installed in the flow paths of each refrigerant. In other cases, a gradual switching from low temperature to high temperature is required. In this regard, many plasma etching systems use low-temperature and high-temperature refrigerants, as described above, and gradually change the mixture ratio of the low-temperature and high-temperature refrigerants by controlling the opening of valves in the flow paths of each refrigerant.

[0008] However, the temperature control described above is performed using multiple control inputs to switch the valves provided in the flow paths of the refrigerants. Furthermore, the mechanical characteristics of each valve may differ from one another. Therefore, the desired temperature control may not always be performed with good responsiveness and precision.

[0009] Furthermore, when multiple valves are used, the area occupied by each valve and the area occupied by the piping connected to each valve may become large. Furthermore, in a plasma etching apparatus, many components are arranged around the chuck, such as an electrode and its cable that generates a bias for attracting ions to the wafer, an electrode and its cable that applies a bias to the electrostatic chuck, and piping for introducing gas. In recent years, in the field of semiconductor manufacturing equipment, there has been a strong demand for improving manufacturing efficiency by reducing the footprint. Considering this situation, it is desirable to minimize the size and area occupied by the components.

[0010] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a temperature control device, a plasma etching device, and a semiconductor manufacturing system that can improve the responsiveness and accuracy of temperature control while suppressing the size and occupied area. [Means for solving the problem]

[0011] Embodiments of the present invention relate to the following:

[0012] <1> A temperature control device comprising: a valve device; a first fluid supply device that supplies a first fluid to the valve device; a second fluid supply device that supplies a second fluid to the valve device; and a supply pipe section that circulates the first fluid, the second fluid, or the first fluid and the second fluid flowing out of the valve device, wherein the temperature control device controls temperature using the fluid circulated by the supply pipe section, the valve device includes a first valve member and a second valve member that are in contact with each other and are rotatable relative to each other while maintaining the contact state; A temperature control device in which the first fluid, the second fluid, or the first fluid and the second fluid are supplied from the valve device to the supply pipe portion in response to relative rotation between the first valve member and the second valve member.

[0013] <2> the first valve member has a first upstream flow path, a first downstream flow path, a second upstream flow path, and a second downstream flow path, which respectively open on a surface facing the second valve member and on a surface different from the surface facing the second valve member, the first fluid being supplied to the first upstream flow path, and the second fluid being supplied to the second upstream flow path, the supply pipe portion receiving the first fluid from the first downstream flow path and the second fluid from the second downstream flow path, The second valve member is a first relay flow path that overlaps with the first upstream flow path and the first downstream flow path in response to a relative rotation between the first valve member and the first relay flow path, thereby allowing the first fluid to flow from the first upstream flow path to the first downstream flow path, and that does not overlap with at least one of the first upstream flow path and the first downstream flow path, thereby blocking the flow of the first fluid from the first upstream flow path to the first downstream flow path; a second relay flow path that overlaps with the second upstream flow path and the second downstream flow path in response to a relative rotation between the first valve member and the second relay flow path, thereby allowing the second fluid to flow from the second upstream flow path to the second downstream flow path, and that does not overlap with at least one of the second upstream flow path and the second downstream flow path, thereby blocking the flow of the second fluid from the second upstream flow path to the second downstream flow path, <1> The temperature control device according to claim 1.

[0014] <3> In the valve device, when an area where an opening end of the first upstream flow path and an opening end of the first downstream flow path that open on a surface of the first valve member facing the second valve member overlap with the first relay flow path is maximized, the flow of the second fluid from the second upstream flow path to the second downstream flow path is blocked, and when an area where an opening end of the second upstream flow path and an opening end of the second downstream flow path that open on a surface of the first valve member facing the second valve member overlap with the second relay flow path is maximized, the flow of the first fluid from the first upstream flow path to the first downstream flow path is blocked. <2> The temperature control device according to claim 1.

[0015] <4> In the valve device, when the first valve member and the second valve member are rotated relative to each other from a state in which an overlapping area between an opening end of the first upstream flow path and an opening end of the first downstream flow path, which open on a surface of the first valve member facing the second valve member, and the first relay flow path is maximum, to a state in which the flow of the first fluid from the first upstream flow path to the first downstream flow path is blocked, an overlapping area between the opening end of the first upstream flow path and the opening end of the first downstream flow path and the first relay flow path gradually decreases, and an overlapping area between the opening end of the second upstream flow path and the opening end of the second downstream flow path and the second relay flow path gradually increases. <3> The temperature control device according to claim 1.

[0016] <5> the first valve member further has a first bypass flow passage and a second bypass flow passage that open on a surface facing the second valve member and a surface different from the surface facing the second valve member, respectively; the first relay flow path allows the first fluid to flow from the first upstream flow path to the first bypass flow path when blocking the flow of the first fluid from the first upstream flow path to the first downstream flow path; the first relay flow path allows the first fluid to flow from the first upstream flow path to the first downstream flow path and the first bypass flow path when the first relay flow path overlaps with the first upstream flow path, the first downstream flow path, and the first bypass flow path; the second relay flow path allows the second fluid to flow from the second upstream flow path to the second bypass flow path when blocking the flow of the second fluid from the second upstream flow path to the second downstream flow path; the second relay flow path allows the second fluid to flow from the second upstream flow path to the second downstream flow path and the second bypass flow path when the second relay flow path overlaps with the second upstream flow path, the second downstream flow path, and the second bypass flow path. <2> The temperature control device according to claim 1.

[0017] <6> the first valve member further includes a return flow path, a first branch flow path, and a second branch flow path, each of which opens on a surface facing the second valve member and a surface different from the surface facing the second valve member; the return flow path receives the first fluid, the second fluid, or the first fluid and the second fluid after the first fluid has been circulated through the supply pipe portion and temperature controlled, the first branch flow path is connected to the first fluid supply device, and the second branch flow path is connected to the second fluid supply device, The second valve member further includes a third relay flow path that overlaps the return flow path and the first branch flow path to allow fluid to flow from the return flow path to the first branch flow path, and that overlaps the return flow path and the second branch flow path to allow fluid to flow from the return flow path to the second branch flow path, in response to relative rotation between the second valve member and the first valve member. <2> The temperature control device according to claim 1.

[0018] <7> a chuck for holding the wafer; A plasma etching apparatus comprising the above temperature control device.

[0019] <8> the first fluid and the second fluid are liquid refrigerants; the temperature control device supplies the first fluid, the second fluid, or the first fluid and the second fluid from the supply pipe portion to a flow path formed in the chuck. <7> The plasma etching apparatus according to claim 1.

[0020] <9> the first fluid and the second fluid are gases, the temperature control device supplies the first fluid, the second fluid, or the first fluid and the second fluid from the supply pipe unit to a space between the chuck and the wafer; <7> The plasma etching apparatus according to claim 1.

[0021] <10> The temperature control device cools the first fluid using a reverse Brayton cycle refrigeration cycle device. <7> The plasma etching apparatus according to claim 1.

[0022] <11> Semiconductor manufacturing equipment, A semiconductor manufacturing system comprising the temperature control device according to claim 1.

[0023] <12> a plurality of semiconductor manufacturing devices; A semiconductor manufacturing system comprising the temperature control device according to claim 1, the temperature control device includes a plurality of the valve devices and a plurality of the supply pipe sections; the first fluid supply device includes a plurality of first branch pipe sections, and the first fluid is branched into the plurality of first branch pipe sections to be distributed; the second fluid supply device includes a plurality of second branch pipe sections, and the second fluid is branched into the plurality of second branch pipe sections to be distributed; The semiconductor manufacturing system includes a plurality of valve devices each connected to a corresponding one of the first branch pipe section and the second branch pipe section, and connected to a corresponding one of the semiconductor manufacturing apparatuses via a corresponding one of the supply pipe sections. the above <12> In the semiconductor manufacturing apparatus, the plurality of semiconductor manufacturing apparatuses may include apparatuses that perform different processes from each other. the above <12> In the above, the temperature control device may cool the first fluid by a reverse Brayton cycle refrigeration cycle device. [Effects of the Invention]

[0024] According to the embodiment of the present invention, it is possible to improve the responsiveness and accuracy of temperature control while reducing the size and occupied area. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a diagram illustrating a plasma etching apparatus including a temperature control device according to an embodiment of the present invention; [Figure 2] 2 is an exploded perspective view of a valve device that constitutes the temperature control device shown in FIG. 1. FIG. [Figure 3] 3 is a diagram showing a first valve member and a second valve member that constitute the valve device shown in FIG. 2, arranged side by side. FIG. [Figure 4] 3A to 3C are diagrams illustrating the operation of the valve device shown in FIG. 2. [Figure 5] 2 is a diagram schematically illustrating the temperature control device of FIG. 1 that controls the temperature of a fluid using a refrigeration cycle device of a reverse Brayton cycle, and a plasma etching device including the same. [Figure 6]2 is a diagram schematically illustrating another plasma etching apparatus equipped with the temperature control device shown in FIG. [Figure 7] FIG. 10 is a diagram schematically illustrating a plasma etching apparatus including a temperature control device according to a modified example. [Figure 8] FIG. 2 is a diagram schematically illustrating a semiconductor manufacturing system including the temperature control device shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0026] An embodiment will be described in detail below with reference to the accompanying drawings.

[0027] <Temperature control device and plasma etching device> FIG. 1 shows a schematic diagram of a plasma etching apparatus 100 equipped with a temperature control apparatus 1 according to one embodiment.

[0028] The plasma etching apparatus 100 includes a chuck 102 having a lower electrode 101, an upper electrode 103, and a chamber 104 that houses the chuck 102 and the upper electrode 103. The chuck 102 holds a wafer W. The chuck 102 is, for example, an electrostatic chuck. The chuck 102 houses, for example, the lower electrode 101 inside.

[0029] In this embodiment, the temperature control device 1 supplies a temperature-controlled fluid to a flow path (not shown) formed in the chuck 102. In this way, the temperature control device 1 controls the temperature of the wafer W via the chuck 102.

[0030] The temperature control device 1 includes a valve device 2, a first fluid supply device 40 that supplies a first fluid to the valve device 2, a second fluid supply device 50 that supplies a second fluid to the valve device 2, a supply pipe section 61 that circulates the first fluid, the second fluid, or the first fluid and the second fluid flowing out of the valve device 2, a discharge pipe section 62 that returns the first fluid, the second fluid, or the first fluid and the second fluid that have passed through the chuck 102 from the supply pipe section 61 to the valve device 2, and a controller 70. The temperature control device 1 supplies the first fluid, the second fluid, or the first fluid and the second fluid from the valve device 2 to the supply pipe section 61 in accordance with the operation of the valve device 2.

[0031] The first fluid supply device 40 includes a first temperature control section 41, a first upstream pipe section 42 that connects the first temperature control section 41 to the valve device 2 and is located upstream of the valve device 2, and a first downstream pipe section 43 that connects the first temperature control section 41 to the valve device 2 and is located downstream of the valve device 2. The first fluid supply device 40 supplies a first fluid whose temperature has been controlled by the first temperature control section 41 from the first upstream pipe section 42 to the valve device 2. The first fluid supplied to the valve device 2 is either supplied to the supply pipe section 61 or discharged from the valve device 2 without being supplied to the supply pipe section 61, depending on the operation of the valve device 2.

[0032] When the first fluid is supplied to the supply pipe section 61, the first fluid passes through the chuck 102, returns to the valve device 2, and then is discharged from the valve device 2. The first downstream pipe section 43 receives the first fluid that has been supplied to the supply pipe section 61 or that is discharged from the valve device 2 without being supplied, and sends it to the first temperature control section 41. The first fluid that has flowed from the first downstream pipe section 43 into the first temperature control section 41 is temperature-controlled again by the first temperature control section 41, and then flows into the first upstream pipe section 42.

[0033] The second fluid supply device 50 includes a second temperature control section 51, a second upstream pipe section 52 that connects the second temperature control section 51 to the valve device 2 and is located upstream of the valve device 2, and a second downstream pipe section 53 that connects the second temperature control section 51 to the valve device 2 and is located downstream of the valve device 2. The second fluid supply device 50 supplies the second fluid, whose temperature has been controlled by the second temperature control section 51 to a temperature different from that of the first fluid, from the second upstream pipe section 52 to the valve device 2. The second fluid supplied to the valve device 2 is either supplied to the supply pipe section 61 or discharged from the valve device 2 without being supplied to the supply pipe section 61, depending on the operation of the valve device 2.

[0034] When the second fluid is supplied to the supply pipe section 61, the second fluid passes through the chuck 102, returns to the valve device 2, and then is discharged from the valve device 2. The second downstream pipe section 53 receives the second fluid that has been supplied to the supply pipe section 61 or that has been discharged from the valve device 2 without being supplied, and sends it to the second temperature control section 51. The second fluid that has flowed from the second downstream pipe section 53 into the second temperature control section 51 is temperature-controlled again by the second temperature control section 51, and then flows into the second upstream pipe section 52.

[0035] In this embodiment, as described above, the first fluid and the second fluid can be supplied from the valve device 2 to the supply pipe section 61 in accordance with the operation of the valve device 2. In this embodiment, the temperature of the first fluid, which is temperature-controlled by the first temperature control section 41, is set to be lower than the temperature of the second fluid, which is temperature-controlled by the second temperature control section 51. As a result, when the first fluid and the second fluid are supplied from the valve device 2 to the supply pipe section 61, temperature control is possible using a mixed fluid at an intermediate temperature between the temperatures of the first fluid and the second fluid.

[0036] When the first fluid and the second fluid are supplied from the valve device 2 to the supply pipe section 61 as described above, the mixed fluid of the first fluid and the second fluid that passes through the chuck 102 and returns to the valve device 2 is distributed from the valve device 2 to the first fluid supply device 40 and the second fluid supply device 50 and then discharged. In this specification, the fluid of the mixed fluid that is discharged to the first fluid supply device 40 side is treated as the first fluid, and the fluid of the mixed fluid that is discharged to the second fluid supply device 50 side is treated as the second fluid. After the first fluid and the second fluid are supplied from the valve device 2 to the supply pipe section 61 as described above, the first fluid that returns to the first temperature control section 41 is also temperature-controlled again by the first temperature control section 41 and then flows into the first upstream pipe section 42. The second fluid that returns to the second temperature control section is temperature-controlled again by the second temperature control section 51 and then flows into the second upstream pipe section 52.

[0037] In this embodiment, the first fluid and the second fluid are the same liquid. The first fluid and the second fluid may be fluorine-based brine, alcohol-based brine, ether-based brine, water, etc. The first fluid and the second fluid are not particularly limited.

[0038] <Valve device> The valve device 2 includes a first valve member 10 and a second valve member 20 that are in contact with each other and are relatively rotatable while maintaining that contact, and a drive device 30. The drive device 30 applies power to rotate the first valve member 10 and the second valve member 20 relative to each other. The drive device 30 includes, for example, an electric motor, and rotates the first valve member 10 and the second valve member 20 relative to each other. The drive device 30 is controlled by a controller 70.

[0039] The valve device 2 sets the fluid supplied from the valve device 2 to the supply pipe section 61 to be the first fluid, the second fluid, or the first fluid and the second fluid, depending on the relative rotation between the first valve member 10 and the second valve member 20. When the first fluid and the second fluid are supplied to the supply pipe section 61, the mixing ratio of the first fluid and the second fluid can be controlled depending on the relative rotation between the first valve member 10 and the second valve member 20.

[0040] Fig. 2 is an exploded perspective view of the valve device 2, showing the first valve member 10 and the second valve member 20. Fig. 3 is a diagram showing the first valve member 10 and the second valve member 20 side by side. The first valve member 10 and the second valve member 20 will be described in detail below with reference to Figs. 2 and 3.

[0041] The first valve member 10 is a disk-shaped member and includes a first upstream flow path 11U, a first downstream flow path 11D, a first bypass flow path 11B, a second upstream flow path 12U, a second downstream flow path 12D, a second bypass flow path 12B, a return flow path 13, a first branch flow path 131, and a second branch flow path 132.

[0042] The first upstream flow path 11U, the first downstream flow path 11D, the first bypass flow path 11B, the second upstream flow path 12U, the second downstream flow path 12D, the second bypass flow path 12B, the return flow path 13, the first branch flow path 131, and the second branch flow path 132 each open to a first surface S1 of the first valve member 10 that faces the second valve member 20 and a second surface S2 different from the first surface S1. The first surface S1 of the first valve member 10 is the surface that comes into contact with the second valve member 20. In this embodiment, the second surface S2 is the surface opposite the first surface S1, and the above-mentioned flow paths penetrate the disk-shaped first valve member 10 in the axial direction. However, the formation of the flow paths is not limited to the example shown in the figure. For example, some or all of the above-mentioned flow paths may open to the first surface S1 and also to a side surface of the first valve member 10.

[0043] The first upstream flow path 11U is connected to the first upstream pipe section 42 of the first fluid supply device 40. The first upstream flow path 11U is supplied with the first fluid. The supply pipe section 61 is connected to the first downstream flow path 11D. The first downstream pipe section 43 of the first fluid supply device 40 is connected to the first bypass flow path 11B. In FIG. 2, the first upstream pipe section 42, the supply pipe section 61, and the first downstream pipe section 43 are indicated by two-dot chain lines.

[0044] A second upstream pipe section 52 of the second fluid supply device 50 is connected to the second upstream flow path 12U. A second fluid is supplied to the second upstream flow path 12U. A supply pipe section 61 is connected to the second downstream flow path 12D. A second downstream pipe section 53 of the second fluid supply device 50 is connected to the second bypass flow path 12B. In FIG. 2, the second upstream pipe section 52, the supply pipe section 61, and the second downstream pipe section 53 are indicated by two-dot chain lines.

[0045] An exhaust pipe section 62 is connected to the return flow path 13. A first downstream pipe section 43 of a first fluid supply device 40 is connected to the first branch flow path 131. A second downstream pipe section 53 of a second fluid supply device 50 is connected to the second branch flow path 132.

[0046] The second valve member 20 is a disk-shaped member. In this embodiment, the first valve member 10 is fixed, and the second valve member 20 is rotated relative to the first valve member 10 by a drive device 30. However, the second valve member 20 may be fixed, and the first valve member 10 may be rotated.

[0047] The second valve member 20 has a first relay flow passage 21, a second relay flow passage 22, and a third relay flow passage 23, which are groove-shaped recessed from the surface facing the first valve member 10. The second valve member 20 also has a shaft connecting hole 24 at its center. The drive device 30 connects, for example, a rotary drive shaft to the shaft connecting hole 24. This allows the drive device 30 to rotate the second valve member 20.

[0048] The first relay flow path 21 is positioned to at least partially face the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B. The second relay flow path 22 is positioned to at least partially face the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B. The third relay flow path 23 is positioned to at least partially face the return flow path 13, the first branch flow path 131, and the second branch flow path 132. The first relay flow path 21, the second relay flow path 22, and the third relay flow path 23 change their overlapping states with the corresponding flow paths in the first valve member 10 in response to rotation of the second valve member 20 relative to the first valve member 10, thereby switching the state in which the first fluid, the second fluid, or the first and second fluids flow out of the valve device 2. The first relay flow path 21, the second relay flow path 22, and the third relay flow path 23 will be described in detail below.

[0049] The first relay flow path 21 overlaps with the first upstream flow path 11U and the first downstream flow path 11D depending on the rotation of the second valve member 20 relative to the first valve member 10 (in other words, the position in the rotational direction), thereby allowing the first fluid to flow from the first upstream flow path 11U to the first downstream flow path 11D (first fluid supply state). Furthermore, the first relay flow path 21 no longer overlaps with at least one of the first upstream flow path 11U and the first downstream flow path 11D depending on the rotation of the second valve member 20 relative to the first valve member 10 to a state different from the first fluid supply state, thereby blocking the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D (first fluid blocked state). In this embodiment, the first relay flow path 21 no longer overlaps with the first downstream flow path 11D in the first fluid blocked state. At this time, the flat portion of the second valve member 20 blocks the first downstream flow path 11D, thereby blocking the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D.

[0050] The first fluid supply state includes a fully open supply state in which the opening ends of the first upstream flow path 11U and the first downstream flow path 11D, which open on the first surface S1 of the first valve member 10 facing the second valve member 20, overlap the first relay flow path 21 over a maximum area, and a supply and bypass state in which the first relay flow path 21 overlaps with the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B. In the supply and bypass state, the first fluid is permitted to flow from the first upstream flow path 11U to the first downstream flow path 11D and the first bypass flow path 11B. The first fluid that flows into the first bypass flow path 11B flows into the first downstream pipe section 43.

[0051] When the amount of the first fluid supplied to the supply pipe section 61 is reduced relative to the fully open supply state, the first fluid is supplied in the supply and bypass state. As the second valve member 20 transitions from the fully open supply state to the supply and bypass state and rotates away from the fully open supply state, the overlap between the first relay flow path 21 and the first bypass flow path 11B gradually increases, and the overlap between the first relay flow path 21 and the first upstream flow path 11U gradually decreases. Then, as the first relay flow path 21 and the first upstream flow path 11U no longer overlap, the state of the first relay flow path 21 enters the first fluid shutoff state. In the first fluid shutoff state, all of the first fluid flowing into the first upstream flow path 11U flows into the first bypass flow path 11B and then into the first downstream pipe section 43.

[0052] The second relay flow path 22 rotates and moves together with the first relay flow path 21 in accordance with the rotation of the second valve member 20 relative to the first valve member 10 (in other words, the position in the rotational direction). In accordance with the rotation of the second valve member 20 relative to the first valve member 10, the second relay flow path 22 overlaps with the second upstream flow path 12U and the second downstream flow path 12D, thereby allowing the second fluid to flow from the second upstream flow path 12U to the second downstream flow path 12D (second fluid supply state). In addition, in accordance with the rotation of the second valve member 20 relative to the first valve member 10 to a state different from the second fluid supply state, the second relay flow path 22 no longer overlaps with at least one of the second upstream flow path 12U and the second downstream flow path 12D, thereby blocking the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D (second fluid blocked state). In this embodiment, in the second fluid blocked state, the second relay flow path 22 no longer overlaps with the second downstream flow path 12D. At this time, the flat portion of the second valve member 20 blocks the second downstream flow path 12D, thereby blocking the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D.

[0053] The second fluid supply state includes a fully open supply state in which the area over which the opening ends of the second upstream flow path 12U and the second downstream flow path 12D, which open on the first surface S1 of the first valve member 10 facing the second valve member 20, overlap with the second relay flow path 22 is maximized, and a supply and bypass state in which the second relay flow path 22 overlaps with the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B. In the supply and bypass state, the second fluid is permitted to flow from the second upstream flow path 12U to the second downstream flow path 12D and the second bypass flow path 12B. The second fluid that flows into the second bypass flow path 12B flows into the second downstream-side pipe section 53.

[0054] When the amount of the second fluid supplied to the supply pipe section 61 is reduced relative to the fully open supply state, the second fluid is supplied in the supply and bypass state. As the second valve member 20 transitions from the fully open supply state to the supply and bypass state and rotates away from the fully open supply state, the overlap between the second relay flow path 22 and the second bypass flow path 12B gradually increases, and the overlap between the second relay flow path 22 and the second upstream flow path 12U gradually decreases. Then, as the second relay flow path 22 and the second upstream flow path 12U no longer overlap, the second relay flow path 22 enters the second fluid shutoff state. In the second fluid shutoff state, all of the second fluid flowing into the second upstream flow path 12U flows into the second bypass flow path 12B and then into the second downstream pipe section 53.

[0055] In this embodiment, the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D is blocked when the overlapping area of ​​the opening ends of the first upstream flow path 11U and the first downstream flow path 11D, which open on the first surface S1 of the first valve member 10 facing the second valve member 20, with the first relay flow path 22 is maximized. In other words, when the first fluid is in the fully open supply state, the second fluid blocked state is established. On the other hand, when the overlapping area of ​​the opening ends of the second upstream flow path 12U and the second downstream flow path 12D, which open on the first surface S1, with the second relay flow path 22 is maximized, the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D is blocked. In other words, when the second fluid is in the fully open supply state, the first fluid blocked state is established.

[0056] Furthermore, when the second valve member 20 is rotated from a state in which the overlapping area of ​​the opening ends of the first upstream flow path 11U and the first downstream flow path 11D, which open at the first surface S1, with the first relay flow path 21 is maximum, to a state in which the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D is blocked, the overlapping area of ​​the opening ends of the first upstream flow path 11U and the first downstream flow path 11D with the first relay flow path 21 gradually decreases, and the overlapping area of ​​the opening ends of the second upstream flow path 12U and the second downstream flow path 12D with the second relay flow path 22 gradually increases. On the other hand, when the second valve member 20 is rotated from a state in which the overlapping area of ​​the opening ends of the second upstream flow path 12U and the second downstream flow path 12D, which open at the first surface S1, with the second relay flow path 22 is maximum, to a state in which the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D is blocked, the overlapping area of ​​the opening ends of the second upstream flow path 12U and the second downstream flow path 12D with the second relay flow path 22 gradually decreases, and the overlapping area of ​​the opening ends of the first upstream flow path 11U and the first downstream flow path 11D with the first relay flow path 21 gradually increases.

[0057] That is, in the valve device 2, when the first fluid is in a supply and bypass state and the second fluid is in a supply and bypass state, increasing the supply rate of the first fluid by rotating the second valve member 20 decreases the supply rate of the second fluid, and decreasing the supply rate of the first fluid increases the supply rate of the second fluid. This makes it possible to change the mixing ratio of the first fluid and the second fluid.

[0058] The first fluid, the second fluid, or the first fluid and the second fluid, supplied from the valve device 2 through the supply pipe section 61 to the chuck 102, passes through the chuck 102 and then returns to the valve device 2 via the discharge pipe section 62. The first fluid, the second fluid, or the first fluid and the second fluid returned in this manner are returned to the first fluid supply device 40, the second fluid supply device 50, or the first fluid supply device 40 and the second fluid supply device 50. The third relay flow path 23 switches the fluids to be returned to the first fluid supply device 40 and the second fluid supply device 50.

[0059] Specifically, the third relay flow path 23 overlaps with the return flow path 13 and the first branch flow path 131 depending on the rotation of the second valve member 20 relative to the first valve member 10 (in other words, the position in the rotational direction), thereby allowing the fluid to flow from the return flow path 13 to the first branch flow path 131. The third relay flow path 23 overlaps with the return flow path 13 and the second branch flow path 132 depending on the rotation of the second valve member 20 relative to the first valve member 10, thereby allowing the fluid to flow from the return flow path 13 to the second branch flow path 132. The third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132 depending on the rotation of the second valve member 20 relative to the first valve member 10, thereby allowing the fluid to flow from the return flow path 13 to the first branch flow path 131 and the second branch flow path 132.

[0060] More specifically, when only the first fluid is supplied to the supply pipe section 61, the third relay flow path 23 overlaps only with the return flow path 13 and the first branch flow path 131, thereby allowing the first fluid to flow from the return flow path 13 to the first branch flow path 131. When only the second fluid is supplied to the supply pipe section 61, the third relay flow path 23 overlaps only with the return flow path 13 and the second branch flow path 132, thereby allowing the second fluid to flow from the return flow path 13 to the second branch flow path 132.

[0061] When the first fluid and the second fluid are supplied to the supply pipe section 61, the third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132, thereby allowing the first fluid to flow from the return flow path 13 to the first branch flow path 131 and the second fluid to flow from the return flow path 13 to the second branch flow path 132. When the third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132, the flow rates of the first fluid flowing into the first branch flow path 131 and the second branch flow path 132 are determined according to the ratio of the overlapping area between the third relay flow path 23 and the first branch flow path 131 to the overlapping area between the third relay flow path 23 and the second branch flow path 132.

[0062] Fig. 4 is a diagram illustrating the operation of the valve device 2. In Fig. 4, for ease of explanation, the first relay flow path 21, the second relay flow path 22, and the third relay flow path 23 are hatched.

[0063] FIG. 4(a) shows the first fluid in a fully open supply state. In this state, the area over which the opening ends of the first upstream flow path 11U and the first downstream flow path 11D, which open to the first surface S1, overlap with the first relay flow path 21 is maximized. The first relay flow path 21 does not overlap with the first bypass flow path 11B. The second relay flow path 22 overlaps only with the second upstream flow path 12U and the second bypass flow path 12B. The third relay flow path 23 overlaps only with the return flow path 13 and the first branch flow path 131. In the fully open supply state of the first fluid shown in FIG. 4(a), only the low-temperature first fluid is supplied to the supply pipe section 61. FIG. 4(a) is labeled "Cold Loop" to indicate this state.

[0064] 4(b) to 4(d) show a first fluid supply and bypass state and a second fluid supply and bypass state. In this state, the first relay flow path 21 overlaps with the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B. The second relay flow path 22 overlaps with the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B. The third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132. In the supply and bypass states of the first fluid and the supply and bypass states of the second fluid shown in Figures 4(b) to 4(e), the low-temperature first fluid and the high-temperature second fluid are supplied to the supply pipe section 61. Figures 4(b) to 4(e) are labeled "Mixing Loop," which means this state.

[0065] In FIG. 4(b), the supply rate of the first fluid is greater than the supply rate of the second fluid. FIG. 4(b) shows, for example, a state in which the second valve member 20 has been rotated by 11.25° from the state shown in FIG. 4(a). In FIG. 4(c), the supply rates of the first fluid and the second fluid are the same. FIG. 4(c) shows, for example, a state in which the second valve member 20 has been rotated by 22.5° from the state shown in FIG. 4(a). In FIG. 4(d), the supply rate of the first fluid is less than the supply rate of the second fluid. FIG. 4(d) shows, for example, a state in which the second valve member 20 has been rotated by 33.75° from the state shown in FIG. 4(a).

[0066] FIG. 4(e) shows the second fluid in a fully open supply state. In this state, the area over which the opening ends of the second upstream flow path 12U and the second downstream flow path 12D, which open on the first surface S1, overlap with the second relay flow path 22 is maximized. The second relay flow path 22 does not overlap with the second bypass flow path 12B. The first relay flow path 21 overlaps only with the first upstream flow path 11U and the first bypass flow path 11B. The third relay flow path 23 overlaps only with the return flow path 13 and the second branch flow path 132. In the fully open supply state of the second fluid shown in FIG. 4(e), only the high-temperature first fluid is supplied to the supply pipe section 61. FIG. 4(e) is labeled "Hot Loop," which refers to this state.

[0067] 2 to 4, the first upstream flow path 11U, the first downstream flow path 11D, the first bypass flow path 11B, the second upstream flow path 12U, the second downstream flow path 12D, the second bypass flow path 12B, the return flow path 13, the first branch flow path 131, and the second branch flow path 132 are each fan-shaped and extend in an arc in the rotation direction of the second valve member 20. The widths of the first upstream flow path 11U, the first downstream flow path 11D, the first bypass flow path 11B, the second upstream flow path 12U, the second downstream flow path 12D, the second bypass flow path 12B, the return flow path 13, the first branch flow path 131, and the second branch flow path 132 in the radial direction perpendicular to the rotation center axis of the second valve member 20 are constant except for both ends in the rotation direction (however, they may be constant throughout). The first upstream flow path 11U is formed radially inward of the first downstream flow path 11D and the first bypass flow path 11B. The first downstream flow path 11D and the first bypass flow path 11B are aligned in the rotational direction. The second upstream flow path 12U is formed radially inward of the second downstream flow path 12D and the second bypass flow path 12B. The second downstream flow path 12D and the second bypass flow path 12B are aligned in the rotational direction. The return flow path 13 is formed radially inward of the first branch flow path 131 and the second branch flow path 132. The first branch flow path 131 and the second branch flow path 132 are aligned in the rotational direction. This arrangement makes it possible to maximize the number of flow paths while also ensuring a large flow path area.

[0068] The first relay flow path 21 has a shape in which a sector-shaped inner circumferential portion overlapping with the first upstream flow path 11U and an outer circumferential portion overlapping with the first downstream flow path 11D and / or the first bypass flow path 11B are integrated together. The inner circumferential portion and the outer circumferential portion extend in an arc shape in the rotational direction of the second valve member 20. The length of the inner circumferential portion of the first relay flow path 21 in the rotational direction is greater than that of the outer circumferential portion. The inner circumferential portion of the first relay flow path 21 always overlaps with the first upstream flow path 11U, regardless of the overlap state of the outer circumferential portion with the first downstream flow path 11D and / or the first bypass flow path 11B. The inner and outer circumferential portions of the first relay flow path 21 are fan-shaped and extend in an arc in the rotational direction of the second valve member 20, and the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B are also fan-shaped and extend in an arc in the rotational direction of the second valve member 20. This stabilizes the rate of change in flow rate when the second valve member 20 is rotated to change the mixing ratio of the first fluid and the second fluid. The relationship between the second relay flow path 22 and the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B, as well as the relationship between the third relay flow path 23 and the return flow path 13, the first branch flow path 131, and the second branch flow path 132, is similar to the relationship between the first relay flow path 21 and the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B described above, and therefore will not be described again. Note that the configuration of the flow paths in the valve device 2 is not limited to that described in the embodiment. For example, the first bypass flow path 11B and the second bypass flow path 12B may be omitted.

[0069] The temperature control device 1 according to the present embodiment described above includes a valve device 2, a first fluid supply device 40 that supplies a first fluid to the valve device 2, a second fluid supply device 50 that supplies a second fluid to the valve device 2, and a supply pipe section 61 that circulates the first fluid, the second fluid, or the first fluid and the second fluid flowing out of the valve device 2, and performs temperature control using the fluid circulated by the supply pipe section 61. The valve device 2 includes a first valve member 10 and a second valve member 20 that are in contact with each other and can rotate relatively while maintaining this contact state. The first fluid, the second fluid, or the first fluid and the second fluid are supplied from the valve device 2 to the supply pipe section 61 in accordance with the relative rotation of the first valve member 10 and the second valve member 20.

[0070] With this configuration, switching or mixing of the first fluid and the second fluid can be performed by the relative rotation of the first valve member 10 and the second valve member 20. Therefore, by reducing the number of parts, the size and occupied area of ​​the valve device 2 can be reduced. Furthermore, switching or mixing of the first fluid and the second fluid can be performed with a single control input by rotating the first valve member 10 and the second valve member 20 relative to each other, improving responsiveness when switching or mixing the first fluid and the second fluid. Furthermore, reducing the control input simplifies control. Therefore, the responsiveness and accuracy of temperature control can be improved while reducing the size and occupied area.

[0071] Furthermore, the plasma etching apparatus 100 can improve the responsiveness and accuracy of temperature control and reduce the footprint, thereby improving the yield of devices that require through holes with high aspect ratios.

[0072] 5 is a diagram schematically illustrating the temperature control device 1 of FIG. 1 that controls the temperature of a fluid using a refrigeration cycle device 300 of a reverse Brayton cycle, and a plasma etching device 100 that includes the same. The refrigeration cycle device 300 is a refrigeration cycle device of a reverse Brayton cycle, and circulates a natural refrigerant (air, nitrogen, etc.). The refrigeration cycle device 300 is connected to a first temperature control unit 41 of a first fluid supply device 40. The first temperature control unit 41 is a heat exchanger that cools the first fluid by exchanging heat between the first fluid and the natural refrigerant circulated by the refrigeration cycle device 300.

[0073] The refrigeration cycle apparatus 300 connects a compressor 301, a cooler 302, a heat recovery exchanger 303, and an expander 304 via a refrigerant circuit 305 so that a natural refrigerant circulates in this order. A portion of the refrigerant circuit 305 downstream of the expander 304 and upstream of the compressor 301 is connected to a first temperature control unit 41. The natural refrigerant, expanded and cooled in the expander 304, flows into the first temperature control unit 41 to cool the first fluid. In this example, the natural refrigerant flowing out of the first temperature control unit 41 passes through the heat recovery exchanger 303 before flowing into the compressor 301. As a result, the natural refrigerant flowing out of the compressor 301 and passing through the cooler 302 is cooled by the natural refrigerant flowing out of the first temperature control unit 41 before flowing into the expander 304. This configuration makes it possible to efficiently lower the temperature of the natural refrigerant flowing out of the expander 304.

[0074] The compressor 301 and the expander 304 are connected to a drive shaft 307A of a common motor 307. As a result, the compressor 301 and the expander 304 rotate in unison with each other as the drive shaft 307A rotates.

[0075] Furthermore, the cooler 302 receives cooling water from a cooling water distribution device 310 and uses the cooling water to cool the high-temperature natural refrigerant flowing out of the compressor 301. The cooling water distribution device 310 has a common flow path 311, and a first branch flow path 312 and a second branch flow path 313 branching from the downstream end of the common flow path 311. The common flow path 311 distributes the cooling water and distributes it to the first branch flow path 312 and the second branch flow path 313.

[0076] The first branch flow path 312 is connected to the cooler 302. The cooler 302 cools the natural refrigerant by exchanging heat between the cooling water from the first branch flow path 312 and the natural refrigerant. In this example, the second branch flow path 313 is connected to a second temperature control unit 51 of the second fluid supply device 50. The second temperature control unit 51 is a heat exchanger that cools the second fluid by exchanging heat with the cooling water from the cooling water distribution device 310. In this configuration, the cooler 302 and the second fluid share a common cooling source, which can prevent the device configuration from becoming complicated and large. The cooling water may be, for example, tap water or well water.

[0077] In recent years, plasma etching equipment has tended to require temperature control down to extremely low temperatures, such as -70°C or below. Reverse Brayton cycle refrigeration devices 300 generally provide highly efficient cooling in extremely low temperatures, i.e., with a high coefficient of performance (COP). Currently, vapor compression refrigeration devices using fluorine-based refrigerants generally experience reduced efficiency when cooling to extremely low temperatures, such as -70°C or below. Furthermore, situations may arise where the use of a three-way refrigeration system results in increased size or the use of special refrigerants. Considering these circumstances, the temperature control device 1 using the reverse Brayton cycle refrigeration device 300 can be said to be a technology that can more effectively perform temperature control in the temperature range expected to be required in plasma etching equipment in the future than vapor compression refrigeration devices.

[0078] <Other plasma etching equipment> Figure 6 is a diagram schematically showing another plasma etching apparatus 100' equipped with the temperature control device 1 shown in Figure 1. Elements in the configuration shown in Figure 6 that are the same as those in the above-described embodiment are given the same reference numerals, and duplicated explanations will be omitted.

[0079] The temperature control device 1 shown in FIG. 6 supplies a first fluid, a second fluid, or the first and second fluids from a supply pipe 61 to the space between the chuck 102 and the wafer W. The temperature control device 1 shown in FIG. 6 uses gas as the first and second fluids. In these respects, the configuration shown in FIG. 6 differs from the configuration shown in FIG. 1. The thermal conductivity of the first fluid is different from that of the second fluid. For example, one of the first and second fluids may be argon, and the other may be helium. In the plasma etching apparatus 100′, the temperature of the wafer W is controlled by changing the thermal conductivity of the space between the chuck 102 and the wafer W by supplying the first fluid, the second fluid, or the first and second fluids.

[0080] The embodiment shown in FIG. 6 may be incorporated into the embodiment shown in FIG.

[0081] <Modification of Temperature Control Device> FIG. 7 is a diagram schematically illustrating a plasma etching apparatus 100″ equipped with a temperature control device 1′ according to a modified example. Elements in the configuration shown in FIG. 7 that are the same as those in the above-described embodiment are designated by the same reference numerals, and redundant explanations will be omitted.

[0082] 7 has a proportional three-way valve 63 connected to the downstream end of a supply pipe section 61. One of the two distribution ports of the proportional three-way valve 63 is connected to a first distribution pipe 64, and the other is connected to a second distribution pipe 65. The downstream ends of the first distribution pipe 64 and the second distribution pipe 65 are connected to different flow paths of the chuck 102.

[0083] Specifically, the first distribution pipe 64 has a fluid inlet near the center of the chuck 102 and supplies a temperature-controlled first fluid, a temperature-controlled second fluid, or a temperature-controlled first and second fluids into the chuck 102 through a flow path extending from the fluid inlet toward the outer periphery. The second distribution pipe 65 has a fluid inlet near the outer periphery of the chuck 102 and supplies a temperature-controlled first fluid, a temperature-controlled second fluid, or a temperature-controlled first and second fluids into the chuck 102 through a flow path extending from the fluid inlet toward the inner periphery. The fluid supplied from the first distribution pipe 64 to the center of the chuck 102 flows out from the outer periphery of the chuck 102 and returns to the valve device 2 through the first relay pipe 66. The fluid supplied from the second distribution pipe 65 to the outer periphery of the chuck 102 flows out from the center of the chuck 102 and returns to the valve device 2 through the second relay pipe 67.

[0084] 7, the variation of temperature control can be increased by using the proportional three-way valve 63. This example is particularly advantageous in that it can suppress temperature variations in the radial direction of the chuck 102.

[0085] <Semiconductor manufacturing systems> FIG. 8 is a diagram schematically showing a semiconductor manufacturing system 200 including a plurality of the temperature control devices 1 shown in FIG.

[0086] The semiconductor manufacturing system 200 includes a plurality of semiconductor manufacturing apparatuses 100a, 100b, and 100c, and the above-described temperature control device 1. However, the temperature control device 1 includes a plurality of valve devices 2, a plurality of supply pipe sections 61, and a plurality of discharge pipe sections 62.

[0087] The first fluid supply device 40 includes a plurality of first branch pipes 42d functioning as first upstream pipes 42, and the first fluid is branched into the plurality of first branch pipes 42d for distribution. The second fluid supply device 50 includes a plurality of second branch pipes 52d functioning as second upstream pipes 52, and the second fluid is branched into the plurality of second branch pipes 52d for distribution. Each of the plurality of valve devices 2 is connected to the corresponding first branch pipes 42d and second branch pipes 52d, and is connected to one of the corresponding semiconductor manufacturing apparatuses 100a, 100b, and 100c via the corresponding supply pipes 61 and discharge pipes 62. Each of the plurality of valve devices 2 is also connected to the first branch return pipe 43d functioning as the first downstream pipe 43 and the second branch return pipe 53d functioning as the second downstream pipe 53.

[0088] The multiple semiconductor manufacturing equipment 100a, 100b, and 100c include equipment that performs different processes. The multiple semiconductor manufacturing equipment 100a, 100b, and 100c may include, for example, a plasma etching equipment and an ashing equipment, or may include equipment that performs other processes. The multiple valve devices 2 corresponding to the multiple semiconductor manufacturing equipment that perform the same process may be controlled synchronously or independently. The multiple valve devices 2 corresponding to the multiple semiconductor manufacturing equipment that perform different processes may be controlled independently.

[0089] The first fluid supply device 40 controls (cools) the temperature of a first fluid using a reverse Brayton cycle refrigeration cycle device 300 shown in Fig. 5. The first fluid supply device 40 supplies the first fluid, whose temperature has been controlled by the refrigeration cycle device 300, to the plurality of semiconductor manufacturing equipment 100a, 100b, and 100c via the plurality of valve devices 2, and uses the first fluid to control the temperature of the plurality of semiconductor manufacturing equipment 100a, 100b, and 100c. The second fluid supply device 50 supplies the second fluid, whose temperature has been controlled by cooling water from the cooling water distribution device 310 shown in Fig. 5, to the plurality of semiconductor manufacturing equipment 100a, 100b, and 100c via the plurality of valve devices 2, and uses the second fluid to control the temperature of the plurality of semiconductor manufacturing equipment 100a, 100b, and 100c. The semiconductor manufacturing system 200 shown in FIG. 8 includes multiple semiconductor manufacturing devices 100a, 100b, and 100c and the temperature control device 1 described above, but may also be configured to connect one semiconductor device to one temperature control device 1.

[0090] Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments. [Explanation of symbols]

[0091] 1,1'...Temperature control device 2...Valve device 10...First valve member 11U…1st upstream flow path 11D...First downstream flow path 11B...First bypass flow path 12U…Second upstream flow path 12D: Second downstream flow path 12B...Second bypass flow path 13...Return flow path 131...First branch channel 132...Second branch flow path 20...Second valve member 21...First relay channel 22...Second relay channel 23...Third relay channel 24…Shaft connection hole 30...Driver 40...First fluid supply device 41...First temperature control section 42...First upstream pipe section 42d...First branch pipe section 43...First downstream pipe section 50…Second fluid supply device 51...Second temperature control section 52...Second upstream pipe section 52d...Second branch pipe section 53…Second downstream pipe section 61...Supply pipe section 62...Discharge pipe section 63...Proportional three-way valve 64…1st distribution pipe 65…Second distribution pipe 66...First relay pipe 67...Second relay pipe 70...Controller 100,100''...Plasma etching equipment 101...lower electrode 102...Zipper 103...Top electrode 104...Chamber 100a, 100b, 100c...Semiconductor manufacturing equipment 200...Semiconductor manufacturing system 300...Refrigeration cycle device 301...Compressor 302...Cooler 303...Recovery heat exchanger 304...Expander 305...Refrigerant circulation path 307...Motor 307A...Drive shaft 310…Cooling water distribution device 311...Common flow path 312...First branch channel 313...Second branch channel 400...Relay fluid circuit W...wafer

Claims

1. A temperature control device comprising: a valve device; a first fluid supply device that supplies a first fluid to the valve device; a second fluid supply device that supplies a second fluid to the valve device; and a supply pipe section that circulates the first fluid, the second fluid, or the first fluid and the second fluid flowing out of the valve device, wherein the temperature control device performs temperature control using the fluid circulated through the supply pipe section, the valve device includes a first valve member and a second valve member that are in contact with each other and are rotatable relative to each other while maintaining the contact state; A temperature control device wherein the first fluid, the second fluid, or the first fluid and the second fluid are supplied from the valve device to the supply pipe portion in response to relative rotation between the first valve member and the second valve member.

2. the first valve member has a first upstream flow path, a first downstream flow path, a second upstream flow path, and a second downstream flow path, each of which opens on a surface facing the second valve member and a surface different from the surface facing the second valve member, the first fluid being supplied to the first upstream flow path, and the second fluid being supplied to the second upstream flow path, the supply pipe portion receiving the first fluid from the first downstream flow path and the second fluid from the second downstream flow path, The second valve member is a first relay flow path that overlaps with the first upstream flow path and the first downstream flow path in response to a relative rotation between the first valve member and the first relay flow path, thereby allowing the first fluid to flow from the first upstream flow path to the first downstream flow path, and that does not overlap with at least one of the first upstream flow path and the first downstream flow path in response to a relative rotation between the first valve member and the first relay flow path; 2. The temperature control device according to claim 1, further comprising: a second relay flow path that overlaps with the second upstream flow path and the second downstream flow path in response to relative rotation between the first valve member and the second relay flow path, thereby allowing the second fluid to flow from the second upstream flow path to the second downstream flow path, and that blocks the flow of the second fluid from the second upstream flow path to the second downstream flow path by no longer overlapping with at least one of the second upstream flow path and the second downstream flow path.

3. a chuck for holding the wafer; A plasma etching apparatus comprising the temperature control device according to claim 1.

4. Semiconductor manufacturing equipment, A semiconductor manufacturing system comprising the temperature control device according to claim 1.

5. a plurality of semiconductor manufacturing devices; A semiconductor manufacturing system comprising the temperature control device according to claim 1, the temperature control device includes a plurality of the valve devices and a plurality of the supply pipe sections; the first fluid supply device includes a plurality of first branch pipe sections, and the first fluid is branched into the plurality of first branch pipe sections and circulated; the second fluid supply device includes a plurality of second branch pipe sections, and the second fluid is branched into the plurality of second branch pipe sections and circulated; The semiconductor manufacturing system includes a plurality of valve devices each connected to a corresponding one of the first branch pipe section and the second branch pipe section, and connected to a corresponding one of the semiconductor manufacturing apparatuses via a corresponding one of the supply pipe sections.

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