High-frequency module and communication device

Abstract

To improve the reliability of the shielding property.SOLUTION: In a high-frequency module 100, a resin layer 5 is disposed on a first main surface 101 of a mount substrate 1 and covers an electronic component 3. An external shield layer 6 covers at least a part of an outer peripheral surface 103 of the mount substrate 1, and the resin layer 5. The mount substrate 1 includes a first dielectric layer 11, a second dielectric layer 12, and a ground electrode 220. The first dielectric layer 11 includes resin and does not include resin glass fiber. The second dielectric layer 12 overlaps with the first dielectric layer 11 in a thickness direction D1 of the mount substrate 1, and is in contact with the first dielectric layer 11. The second dielectric layer 12 includes resin and does not include resin glass fiber. The ground electrode 220 exists between the first dielectric layer 11 and the second dielectric layer 12. The ground electrode 220 is directly connected to the external shield layer 6.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a mounting board, and a communication device including the high-frequency module. [Background technology]

[0002] Patent Document 1 discloses a copper-clad laminate for printed circuit boards. The copper-clad laminate has a composite in which glass fibers are formed on both sides of a prepreg. The composite is located between a resin layer of a first resin-coated copper foil (first RCC) and a resin layer of a second resin-coated copper foil (second RCC).

[0003] Also, Patent Document 1 discloses a printed circuit board in which a circuit pattern is formed on the copper foil of the above-mentioned copper-clad laminate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-44397 Summary of the Invention [Problem to be solved by the invention]

[0005] In a high-frequency module including a mounting substrate and electronic components, there are cases where improvement in the reliability of shielding is required.

[0006] An object of the present invention is to provide a high-frequency module and a communication device that can improve the reliability of shielding. [Means for solving the problem]

[0007] A high-frequency module according to one aspect of the present invention includes a mounting substrate, an electronic component, a resin layer, and an external shielding layer. The mounting substrate has a first main surface and a second main surface facing each other. The electronic component is disposed on the first main surface of the mounting substrate. The resin layer is disposed on the first main surface of the mounting substrate and covers the electronic component. The external shielding layer covers at least a portion of the outer periphery of the mounting substrate and the resin layer. The mounting substrate includes a first dielectric layer, a second dielectric layer, and a ground electrode. The first dielectric layer contains resin and does not contain glass fiber. The second dielectric layer overlaps the first dielectric layer in the thickness direction of the mounting substrate and is in contact with the first dielectric layer. The second dielectric layer contains resin and does not contain glass fiber. The ground electrode is interposed between the first dielectric layer and the second dielectric layer. The ground electrode is directly connected to the external shielding layer.

[0008] A communication device according to one aspect of the present invention includes the high-frequency module according to the above aspect and a signal processing circuit, wherein the signal processing circuit is connected to the high-frequency module. [Effects of the Invention]

[0009] The high-frequency module and communication device according to the above aspects of the present invention can improve the reliability of the shielding properties. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a cross-sectional view of the high-frequency module according to the first embodiment. [Figure 2] FIG. 2 is a plan view of a part of the high-frequency module. [Figure 3] FIG. 3 is a bottom view of a portion of the high-frequency module. [Figure 4] FIG. 4 is a cross-sectional view of a main part of the high-frequency module. [Figure 5] FIG. 5 is a circuit block diagram of a communication device including the high-frequency module. [Figure 6]FIG. 6 is a cross-sectional view of the high-frequency module according to the second embodiment. [Figure 7] FIG. 7 is a cross-sectional view of the high-frequency module according to the third embodiment. [Figure 8] FIG. 8 is a cross-sectional view of the high-frequency module according to the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments 1 to 4 will be described with reference to the drawings. The drawings referred to in the following embodiments 1 to 4 are schematic diagrams, and the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensions, and the size and thickness ratios between the components do not necessarily reflect the actual dimensional ratios.

[0012] (Embodiment 1) (1) High-frequency module A high-frequency module 100 according to the first embodiment will be described with reference to FIGS.

[0013] As shown in FIG. 1 , the high-frequency module 100 according to the first embodiment includes a mounting substrate 1, a plurality of electronic components 3 (hereinafter also referred to as first electronic components 3), a resin layer 5, and an external shielding layer 6. The mounting substrate 1 has a first main surface 101 and a second main surface 102 that face each other. The electronic components 3 are disposed on the first main surface 101 of the mounting substrate 1. The resin layer 5 is disposed on the first main surface 101 of the mounting substrate 1 and covers the electronic components 3. The external shielding layer 6 covers the outer peripheral surface 103 of the mounting substrate 1 and the resin layer 5. The mounting substrate 1 includes a first dielectric layer 11, a second dielectric layer 12, and two ground electrodes 220. The first dielectric layer 11 contains resin but does not contain glass fiber. The second dielectric layer 12 overlaps the first dielectric layer 11 in the thickness direction D1 of the mounting substrate 1 and is in contact with the first dielectric layer 11. The second dielectric layer 12 contains resin but does not contain glass fiber. The ground electrode 220 is interposed between the first dielectric layer 11 and the second dielectric layer 12. In the high-frequency module 100, the ground electrode 220 is directly connected to the outer shield layer 6.

[0014] Moreover, the high-frequency module 100 further includes a plurality of external connection terminals 7 arranged on the second main surface 102 of the mounting substrate 1.

[0015] 1 and 3, the high-frequency module 100 further includes a plurality of second electronic components 8 (four in FIG. 3) arranged on the second main surface 102 of the mounting substrate 1.

[0016] 1, the high-frequency module 100 further includes a second resin layer 19 that is different from the first resin layer 5. The second resin layer 19 is disposed on the second main surface 102 of the mounting substrate 1, and covers the second electronic components 8.

[0017] In the high-frequency module 100, the mounting substrate 1 further includes a first resist layer 17 and a second resist layer 18. A main surface 171 of the first resist layer 17 constitutes a part of the first main surface 101 of the mounting substrate 1. A main surface 181 of the second resist layer 18 constitutes a part of the second main surface 102 of the mounting substrate 1. Note that FIG. 1 is a cross-sectional view corresponding to the cross section taken along line XX in FIG. 2. The first resin layer 5 and the external shielding layer 6 are not shown in FIG. 2. The second resin layer 19 and the external shielding layer 6 are not shown in FIG. 3.

[0018] The high-frequency module 100 according to the first embodiment is used in a communication device 300, as shown in FIG. 5 . The communication device 300 is, for example, a mobile phone (e.g., a smartphone), but is not limited thereto. For example, the communication device 300 may be a wearable device (e.g., a smartwatch). The high-frequency module 100 is a module that supports, for example, 4G (fourth generation mobile communication) standards, 5G (fifth generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project, registered trademark) LTE (Long Term Evolution, registered trademark) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 100 is, for example, a module that supports carrier aggregation and dual connectivity. The high-frequency module 100 is, for example, a transceiver module having a high-frequency circuit including a power amplifier, a transmit filter, an output matching circuit, a low-noise amplifier, a receive filter, and an input matching circuit, but is not limited to a transceiver module. The high-frequency module 100 may be, for example, a transmitting module having a high-frequency circuit including a power amplifier, a transmitting filter, and an output matching circuit, or a receiving module having a high-frequency circuit including a low-noise amplifier, a receiving filter, and an input matching circuit.

[0019] Each of the plurality of electronic components including the plurality of first electronic components 3 and the plurality of second electronic components 8 is, for example, an IC chip, a transmit filter, a receive filter, a duplexer, a surface-mount electronic component, a multiplexer, or a coupler. The IC chip is, for example, a power amplifier, a low-noise amplifier, a switch, or a controller. Each of the transmit filter and the receive filter is, for example, a surface acoustic wave filter, a bulk acoustic wave filter, or an LC filter. The electronic component may be an electronic component including a plurality of filters (e.g., surface acoustic wave filters). The surface-mount electronic component is, for example, a chip inductor or a chip capacitor.

[0020] (1.1) Mounting board The mounting substrate 1 has a first main surface 101 and a second main surface 102 that face each other in a thickness direction D1 of the mounting substrate 1. When viewed from above in the thickness direction D1 of the mounting substrate 1, the outer edge of the mounting substrate 1 is, for example, rectangular, but may have a shape other than rectangular.

[0021] The mounting board 1 has a plurality of dielectric layers, including a first dielectric layer 11 and a second dielectric layer 12, between a first main surface 101 and a second main surface 102. The mounting board 1 is a multilayer board in which a plurality of dielectric layers and a plurality of conductive layers are stacked. The plurality of conductive layers are formed in a predetermined pattern determined for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane perpendicular to the thickness direction D1 of the mounting board 1. The mounting board 1 also has a plurality of via conductors. Each of the plurality of via conductors is an interlayer connection conductor that connects two conductive layers (conductor portions) facing each other in the thickness direction D1 of the mounting board 1.

[0022] The plurality of dielectric layers includes a first dielectric layer 11, a second dielectric layer 12, a third dielectric layer 13, a fourth dielectric layer 14, and a fifth dielectric layer 15. In the mounting board 1, the first dielectric layer 11, the second dielectric layer 12, the third dielectric layer 13, the fourth dielectric layer 14, and the fifth dielectric layer 15 are arranged in the following order in the thickness direction D1 of the mounting board 1. The plurality of conductive layers includes a first conductive layer 21, a second conductive layer 22, a third conductive layer 23, a fourth conductive layer 24, a fifth conductive layer 25, and a sixth conductive layer 26. In the mounting board 1, the first conductive layer 21, the second conductive layer 22, the third conductive layer 23, the fourth conductive layer 24, the fifth conductive layer 25, and the sixth conductive layer 26 are arranged in the thickness direction D1 of the mounting board 1 in the order of the first conductive layer 21, the second conductive layer 22, the third conductive layer 23, the fourth conductive layer 24, the fifth conductive layer 25, and the sixth conductive layer 26. In this embodiment, the first main surface 101 of the mounting board 1 includes a part of a main surface 151 of the fifth dielectric layer 15 opposite to the fourth dielectric layer 14 side. In addition, in this embodiment, the second main surface 102 of the mounting board 1 includes a part of a main surface 112 of the first dielectric layer 11 opposite to the second dielectric layer 12 side. The multiple via conductors include a plurality of first via conductors V1, a plurality of second via conductors V2, a plurality of third via conductors V3, a plurality of fourth via conductors V4, and a plurality of fifth via conductors V5. A plurality of first via conductors V1 penetrate the first dielectric layer 11. The second via conductor V2 penetrates the second dielectric layer 12. The third via conductor V3 penetrates the third dielectric layer 13. The fourth via conductor V4 penetrates the fourth dielectric layer 14. The fifth via conductor V5 penetrates the fifth dielectric layer 15.

[0023] In this embodiment, each of the first dielectric layer 11 and the second dielectric layer 12 contains resin but does not contain glass fiber. Therefore, each of the first dielectric layer 11 and the second dielectric layer 12 does not contain glass cloth. In this embodiment, a first laminate including the first dielectric layer 11 and the first conductive layer 21 is formed using a first RCC (Resin Coated Copper foil). More specifically, the first dielectric layer 11 is formed by curing a semi-cured resin layer of the first RCC. The semi-cured resin layer of the first RCC contains resin but does not contain glass fiber. The first conductive layer 21 is formed by patterning a first copper foil of the first RCC. Therefore, the material of the first conductive layer 21 contains copper. In this embodiment, a second laminate including the second dielectric layer 12 and the second conductive layer 22 is formed using a second RCC. More specifically, the second dielectric layer 12 is formed by curing a semi-cured resin layer of the second RCC. The semi-cured resin layer of the second RCC contains resin but does not contain glass fiber. The second conductive layer 22 is formed by patterning the second copper foil of the second RCC. Therefore, the material of the second conductive layer 22 contains copper.

[0024] The resin contained in each of the first dielectric layer 11 and the second dielectric layer 12 is, for example, an epoxy resin, a fluororesin, a liquid crystal polymer, etc. Each of the first dielectric layer 11 and the second dielectric layer 12 also contains a filler. The filler is an inorganic filler. Examples of materials for the inorganic filler include SiO2, BaSO4, and Al2O3.

[0025] In this embodiment, the third dielectric layer 13 is located on the opposite side of the first dielectric layer 11 from the second dielectric layer 12 in the thickness direction D1 of the mounting substrate 1. The third dielectric layer 13 contains glass fiber and resin. The glass fiber is, for example, at least one type selected from the group consisting of E-glass, T-glass, S-glass, U-glass, NE-glass, quartz fiber fabric, and aramid fiber fabric. The third dielectric layer 13 also contains a filler. The filler is an inorganic filler. Examples of materials for the inorganic filler include SiO2, BaSO4, and Al2O3. In this embodiment, for example, a third laminate including the third dielectric layer 13, the third conductive layer 23, and the fourth conductive layer 24 is formed using a core substrate including a prepreg, a third copper foil disposed on a first main surface of the prepreg, and a fourth copper foil disposed on a second main surface of the prepreg. More specifically, the third conductive layer 23 is formed by patterning the third copper foil of the core substrate. The fourth conductive layer 24 is formed by patterning a fourth copper foil of the core substrate, and therefore the material of each of the third conductive layer 23 and the fourth conductive layer 24 contains copper.

[0026] In this embodiment, the material of each of the fourth dielectric layer 14 and the fifth dielectric layer 15 contains resin but does not contain glass fiber. In this embodiment, a fourth laminate including the fourth dielectric layer 14 and the fifth conductive layer 25 is formed using a third RCC. More specifically, the fourth dielectric layer 14 is formed by curing a semi-cured resin layer of the third RCC. The semi-cured resin layer of the third RCC contains resin but does not contain glass fiber. The fifth conductive layer 25 is formed by patterning a fifth copper foil of the third RCC. Therefore, the fifth conductive layer 25 contains copper. In this embodiment, a fifth laminate including the fifth dielectric layer 15 and the sixth conductive layer 26 is formed using a fourth RCC. More specifically, the fifth dielectric layer 15 is formed by curing a semi-cured resin layer of the fourth RCC. The semi-cured resin layer of the fourth RCC contains resin but does not contain glass fiber. The sixth conductive layer 26 is formed by patterning the sixth copper foil of the fourth RCC, and therefore the material of the sixth conductive layer 26 contains copper.

[0027] The resin contained in each of the fourth dielectric layer 14 and the fifth dielectric layer 15 is, for example, an epoxy resin, a fluororesin, a liquid crystal polymer, etc. Each of the fourth dielectric layer 14 and the fifth dielectric layer 15 also contains a filler. The filler is an inorganic filler. Examples of materials for the inorganic filler include SiO2, BaSO4, and Al2O3.

[0028] The thickness of each of the first dielectric layer 11, the second dielectric layer 12, the third dielectric layer 13, the fourth dielectric layer 14, and the fifth dielectric layer 15 is, for example, not less than 5 μm and not more than 50 μm. In this embodiment, the thicknesses of the first dielectric layer 11, the second dielectric layer 12, the fourth dielectric layer 14, and the fifth dielectric layer 15 are the same, but may be different from one another. In this embodiment, from the viewpoint of suppressing warpage of the mounting substrate 1, it is preferable that the difference between the total thickness of the first dielectric layer 11 and the second dielectric layer 12 and the total thickness of the fourth dielectric layer 14 and the fifth dielectric layer 15 is small. Furthermore, the thickness of each of the first conductive layer 21, the second conductive layer 22, the third conductive layer 23, the fourth conductive layer 24, the fifth conductive layer 25, and the sixth conductive layer 26 is, for example, not less than 3 μm and not more than 30 μm. In this embodiment, the first conductive layer 21, the second conductive layer 22, the third conductive layer 23, the fourth conductive layer 24, the fifth conductive layer 25 and the sixth conductive layer 26 have the same thickness, but may have different thicknesses.

[0029] In the mounting substrate 1, the plurality of conductor portions included in the sixth conductive layer 26 include a plurality of first pad electrodes (land electrodes) 261. The material of the plurality of first pad electrodes 261 includes copper.

[0030] In the mounting substrate 1, the plurality of conductor portions included in the first conductive layer 21 include a plurality of second pad electrodes (land electrodes) 211 and a plurality of third pad electrodes (land electrodes) 212. The material of the plurality of second pad electrodes 211 and the plurality of third pad electrodes 212 includes copper.

[0031] In this embodiment, one of the multiple conductor portions included in the second conductive layer 22 constitutes the ground electrode 220. Therefore, the material of the ground electrode 220 includes copper. The ground electrode 220 is in contact with the external shield layer 6. More specifically, a side edge 223 of the ground electrode 220 is in contact with the external shield layer 6. This allows the ground electrode 220 to be directly connected to the external shield layer 6.

[0032] As shown in FIG. 4, in the thickness direction D1 of the mounting board 1, the distance L2 between the ground electrode 220 and the second main surface 102 of the mounting board 1 is shorter than the distance L1 between the ground electrode 220 and the first main surface 101 of the mounting board 1.

[0033] In the mounting substrate 1, the third conductive layer 23 includes a plurality of second ground electrodes 230 that are different from the ground electrodes 220 (hereinafter also referred to as first ground electrodes 220). Therefore, the material of the second ground electrodes 230 includes copper. The second ground electrodes 230 are in contact with the external shield layer 6. More specifically, a side edge 233 of the second ground electrode 230 is in contact with the external shield layer 6. This allows the second ground electrodes 230 to be directly connected to the external shield layer 6.

[0034] Each of the via conductors, including the first via conductors V1, the second via conductors V2, the third via conductors V3, the fourth via conductors V4, and the fifth via conductors V5, is electrically conductive and is made of copper.

[0035] The first resist layer 17 is disposed on the main surface 151 of the fifth dielectric layer 15 opposite to the fourth dielectric layer 14 side. The first resist layer 17 is patterned to expose the multiple first pad electrodes 261. The first resist layer 17 has multiple openings 174 that correspond one-to-one to the multiple first pad electrodes 261. In a plan view from the thickness direction D1 of the mounting substrate 1, each of the multiple openings 174 is larger than the corresponding first pad electrode 261 among the multiple first pad electrodes 261. The first resist layer 17 is, for example, a solder resist. The first resist layer 17 may be an over resist layer that covers a portion of each of the multiple first pad electrodes 261.

[0036] The second resist layer 18 is disposed on the main surface 112 of the first dielectric layer 11 opposite to the second dielectric layer 12 side. The second resist layer 18 is patterned to expose the plurality of second pad electrodes 211 and the plurality of third pad electrodes 212. The plurality of second resist layers 18 have a plurality of openings 184 corresponding one-to-one to the plurality of pad electrodes including the plurality of second pad electrodes 211 and the plurality of third pad electrodes 212. In a plan view from the thickness direction D1 of the mounting substrate 1, each of the plurality of openings 184 is larger than a corresponding one of the plurality of pad electrodes. The second resist layer 18 is, for example, a solder resist. The second resist layer 18 may be an over resist layer that covers a portion of each of the plurality of pad electrodes.

[0037] (1.2) First electronic component As shown in FIGS. 1 and 2 , the multiple first electronic components 3 are disposed on the first main surface 101 of the mounting board 1. The phrase "the first electronic components 3 are disposed on the first main surface 101 of the mounting board 1" refers to both the first electronic components 3 being mounted on (mechanically connected to) the first main surface 101 of the mounting board 1 and the first electronic components 3 being electrically connected to (appropriate first pad electrodes 261 of) the mounting board 1. The multiple first electronic components 3 are mechanically and electrically connected to the first main surface 101 of the mounting board 1 by multiple bonding portions 4. The multiple first electronic components 3 are circuit components of the high-frequency circuit included in the high-frequency module 100. The multiple bonding portions 4 corresponding to the multiple first electronic components 3 are made of, for example, solder. The multiple bonding portions 4 may be components of the first electronic components 3 or may be components interposed between the first electronic components 3 and the first main surface 101 of the mounting board 1.

[0038] In a plan view from the thickness direction D1 of the mounting substrate 1, the outer edge of each of the plurality of first electronic components 3 is, for example, rectangular. The plurality of first electronic components 3 includes a plurality of electronic components (12 in FIG. 2) having a relatively large planar size and a plurality of electronic components (18 in FIG. 2) having a relatively small planar size. The electronic components having a relatively large planar size are, for example, electronic components (e.g., filters, power amplifiers, switches, etc.) that include a substrate (e.g., a silicon substrate, a gallium arsenide substrate, a lithium tantalate substrate, a lithium niobate substrate, etc.). The electronic components having a relatively small planar size are, for example, surface-mount electronic components (e.g., chip inductors, chip capacitors, etc.).

[0039] (1.3) First resin layer As shown in Fig. 1, the first resin layer 5 is disposed on the first main surface 101 of the mounting substrate 1, and covers the plurality of first electronic components 3. The first resin layer 5 has electrical insulation properties. The first resin layer 5 contains a resin (e.g., an epoxy resin). The first resin layer 5 may contain a filler in addition to the resin.

[0040] (1.4) Outer shield layer The external shield layer 6 covers the first resin layer 5 and the outer peripheral surface 103 of the mounting substrate 1. More specifically, the external shield layer 6 covers the main surface 51 of the first resin layer 5 opposite the mounting substrate 1 side, the outer peripheral surface 53 of the first resin layer 5, and the outer peripheral surface 103 of the mounting substrate 1. The external shield layer 6 includes a first shield portion 61 covering the main surface 51 of the first resin layer 5 and a second shield portion 62 covering the outer peripheral surface 53 of the first resin layer 5. The external shield layer 6 also covers the outer peripheral surface 193 of the second resin layer 19. In the external shield layer 6, the second shield portion 62 also covers the outer peripheral surface 193 of the second resin layer 19. In the high-frequency module 100, the main surface 191 of the second resin layer 19 opposite the mounting substrate 1 side is not covered by the external shield layer 6 and is exposed.

[0041] The external shield layer 6 is electrically conductive. In the high-frequency module 100, the external shield layer 6 is provided, for example, for the purpose of electromagnetic shielding between the inside and outside of the high-frequency module 100. The external shield layer 6 has a multilayer structure in which multiple metal layers are stacked, but is not limited to this and may be a single metal layer. The metal layer contains one or more types of metal. When the shield layer has a multilayer structure in which multiple metal layers are stacked, it includes, for example, a first stainless steel layer, a Cu layer on the first stainless steel layer, and a second stainless steel layer on the Cu layer. The material of each of the first stainless steel layer and the second stainless steel layer is an alloy containing Fe, Ni, and Cr. When the external shield layer 6 is a single metal layer, it is, for example, a Cu layer.

[0042] In the external shield layer 6, the second shield section 62 is in contact with the ground electrode 220 of the mounting board 1. By being in contact with the ground electrode 220 of the mounting board 1, the external shield layer 6 is directly connected to the ground electrode 220 of the mounting board 1. Therefore, the external shield layer 6 is connected to a ground terminal included in the plurality of external connection terminals 7, for example, via the ground electrode 220 of the mounting board 1.

[0043] (1.5) External connection terminal 1 and 3, the external connection terminals 7 are arranged on the second main surface 102 of the mounting substrate 1. "The external connection terminals 7 are arranged on the second main surface 102 of the mounting substrate 1" means that the external connection terminals 7 are mechanically connected to the mounting substrate 1 and that the external connection terminals 7 are electrically connected to (appropriate third pad electrodes 212 of) the mounting substrate 1. In this embodiment, the external connection terminals 7 correspond one-to-one to the third pad electrodes 212 of the mounting substrate 1. Each of the external connection terminals 7 overlaps a corresponding one of the third pad electrodes 212 and is connected to the corresponding third pad electrode 212. The external connection terminals 7 are made of, for example, a metal (for example, copper, a copper alloy, etc.). Each of the external connection terminals 7 is a columnar electrode (for example, a cylindrical electrode). The multiple external connection terminals 7 are joined to the third pad electrode 212, for example, by solder, but this is not limited thereto, and they may be joined using, for example, a conductive adhesive (e.g., a conductive paste) or may be joined directly.

[0044] The plurality of external connection terminals 7 includes a ground terminal. The ground terminal is, for example, a terminal electrically connected to a ground electrode of a circuit board included in the communication device 300 and supplied with a ground potential. The plurality of external connection terminals 7 also includes an antenna terminal connected to an external antenna 310 included in the communication device 300 (see FIG. 5 ), and a signal input terminal, a signal output terminal, and a control terminal connected to a signal processing circuit 301 of the communication device 300.

[0045] At least one of the multiple external connection terminals 7 overlaps the ground electrode 220 in the thickness direction D1 of the mounting substrate 1. The external connection terminal 7 overlapping the ground electrode 220 is separated from the ground electrode 220 in the thickness direction D1 of the mounting substrate 1. In the high-frequency module 100, the external connection terminal 7 entirely overlaps with a part of the ground electrode 220 in a plan view from the thickness direction D1 of the mounting substrate 1, but this is not limiting, and a part of the external connection terminal 7 may overlap with a part of the ground electrode 220, or a part of the external connection terminal 7 may entirely overlap with the ground electrode 220.

[0046] In the high-frequency module 100, the external connection terminal 7 overlapping the ground electrode 220 contains copper.

[0047] The external connection terminal 7 overlapping the ground electrode 220 is a ground terminal. The external connection terminal 7 overlapping the ground electrode 220 is connected to the ground electrode 220 via one third pad electrode 212 among the plurality of third pad electrodes 212 and one first via conductor V1 among the plurality of first via conductors V1.

[0048] The number of external connection terminals 7 overlapping one ground electrode 220 is not limited to one, and may be multiple.

[0049] (1.6) Secondary electronic components As shown in FIGS. 1 and 3 , the multiple second electronic components 8 are disposed on the second main surface 102 of the mounting board 1. The phrase "the second electronic components 8 are disposed on the second main surface 102 of the mounting board 1" refers to both the second electronic components 8 being mounted on (mechanically connected to) the second main surface 102 of the mounting board 1 and the second electronic components 8 being electrically connected to (appropriate second pad electrodes 211 of) the mounting board 1. The multiple second electronic components 8 are mechanically and electrically connected to the second main surface 102 of the mounting board 1 by multiple joints 9. The multiple second electronic components 8 are circuit components of the high-frequency circuit included in the high-frequency module 100. The multiple joints 9 corresponding to the multiple second electronic components 8 are made of, for example, solder. The multiple joints 9 may be components of the second electronic components 8 or may be components interposed between the second electronic components 8 and the second main surface 102 of the mounting board 1.

[0050] In a plan view from the thickness direction D1 of the mounting board 1, the outer edge of each of the plurality of second electronic components 8 is, for example, rectangular.

[0051] (1.7) Second resin layer As shown in FIG. 1 , the second resin layer 19 is disposed on the second main surface 102 of the mounting substrate 1, and covers the plurality of second electronic components 8. The second resin layer 19 also covers the side surfaces of the plurality of external connection terminals 7. The second resin layer 19 has electrical insulation properties. The second resin layer 19 has electrical insulation properties. The second resin layer 19 contains a resin (e.g., epoxy resin). The second resin layer 19 may contain a filler in addition to the resin. The material of the second resin layer 19 is the same as the material of the first resin layer 5, but may be a different material. The second resin layer 19 covers the main surface of the second electronic component 8 opposite the mounting substrate 1 side, but may not cover the main surface of the second electronic component 8 opposite the mounting substrate 1 side.

[0052] (2) Physical properties of the mounting board (2.1) Young's modulus In this embodiment, the relationship is satisfied: [Young's modulus of solder resist] < [Young's modulus of RCC resin layer] < [Young's modulus of prepreg] < [Young's modulus of each of the first resin layer 5 and the second resin layer 19] < [Young's modulus of copper].

[0053] In this embodiment, the Young's modulus of each of the first dielectric layer 11, the second dielectric layer 12, the fourth dielectric layer 14, and the fifth dielectric layer 15 is, for example, about 9 GPa. In this embodiment, the Young's modulus of the third dielectric layer 13 is, for example, about 19 GPa. In this embodiment, the Young's modulus of the ground electrode 220 is, for example, about 123 GPa. In this embodiment, the Young's modulus of each of the first resist layer 17 and the second resist layer 18 is, for example, about 2.4 GPa.

[0054] In this embodiment, the Young's modulus of each of the first dielectric layer 11, the second dielectric layer 12, the fourth dielectric layer 14, and the fifth dielectric layer 15 is smaller than the Young's modulus of the dielectric layer (third dielectric layer 13) formed using a prepreg.

[0055] (2.2) Linear expansion coefficient In this embodiment, the following relationship is satisfied: [linear expansion coefficient of prepreg]<[linear expansion coefficient of each of the first resin layer 5 and the second resin layer 19]<[linear expansion coefficient of stainless steel]<[linear expansion coefficient of copper]<[linear expansion coefficient of the RCC resin layer]<[linear expansion coefficient of the solder resist]. The linear expansion coefficient of the prepreg is, for example, 8×10 -6 The linear expansion coefficient of each of the first resin layer 5 and the second resin layer 19 is, for example, about 10×10 -6 / K~14×10 -6 / K. The linear expansion coefficient of stainless steel is 14.4 × 10 -6 / K. The linear expansion coefficient of copper is 16.5 × 10 -6 / K. The linear expansion coefficient of the resin layer of RCC is 18×10 -6 / K. The linear expansion coefficient of the solder resist is about 60×10 -6 / K.

[0056] In this embodiment, the linear expansion coefficient of each of the first dielectric layer 11, the second dielectric layer 12, the fourth dielectric layer 14, and the fifth dielectric layer 15 is, for example, 18×10 -6 In this embodiment, the linear expansion coefficient of the third dielectric layer 13 is, for example, about 8×10 -6 In this embodiment, the linear expansion coefficient of the ground electrode 220 is, for example, 16.5×10 -6 / K.

[0057] In this embodiment, the difference between the linear expansion coefficient of each of the first dielectric layer 11 and the second dielectric layer 12 sandwiching the ground electrode 220 and the linear expansion coefficient of the ground electrode 220 is smaller than the difference between the linear expansion coefficient of the ground electrode 220 and the linear expansion coefficient of the dielectric layer (third dielectric layer 13) formed using prepreg.

[0058] (3) Communications equipment As shown in FIG. 5 , the communication device 300 includes, for example, a high-frequency module 100 and a signal processing circuit 301 to which the high-frequency module 100 is connected. The communication device 300 further includes an antenna 310. The communication device 300 further includes a circuit board (not shown) on which the high-frequency module 100 is mounted. The circuit board is, for example, a printed wiring board. The circuit board has a ground electrode to which a ground potential is applied. The high-frequency module 100 is configured to, for example, amplify a received signal input from the antenna 310 and output the amplified signal to the signal processing circuit 301. The high-frequency module 100 is also configured to, for example, amplify a transmission signal input from the signal processing circuit 301 and output the amplified signal to the antenna 310. The high-frequency module 100 is controlled, for example, by the signal processing circuit 301 included in the communication device 300.

[0059] The signal processing circuit 301 includes an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on a high-frequency signal. The RF signal processing circuit 302 performs signal processing such as up-conversion on a high-frequency signal (transmission signal) output from the baseband signal processing circuit 303 and outputs the processed high-frequency signal. The RF signal processing circuit 302 also performs signal processing such as down-conversion on a high-frequency signal (reception signal) output from the high-frequency module 100 and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal is, for example, an audio signal or an image signal input from an external device. The baseband signal processing circuit 303 performs IQ modulation processing by combining the I-phase signal and the Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulated signal (IQ signal) in which a carrier signal of a predetermined frequency is amplitude-modulated at a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 303 is used, for example, as an image signal for image display or as an audio signal for a call between the user of the communication device 300.

[0060] (4) Effects The high-frequency module 100 according to the first embodiment includes a mounting substrate 1, an electronic component 3, a resin layer 5, and an external shielding layer 6. The mounting substrate 1 has a first main surface 101 and a second main surface 102 that face each other. The electronic component 3 is disposed on the first main surface 101 of the mounting substrate 1. The resin layer 5 is disposed on the first main surface 101 of the mounting substrate 1 and covers the electronic component 3. The external shielding layer 6 covers at least a portion of the outer peripheral surface 103 of the mounting substrate 1 and the resin layer 5. The mounting substrate 1 includes a first dielectric layer 11, a second dielectric layer 12, and a ground electrode 220. The first dielectric layer 11 contains resin but does not contain glass fiber. The second dielectric layer 12 overlaps the first dielectric layer 11 in the thickness direction D1 of the mounting substrate 1 and is in contact with the first dielectric layer 11. The second dielectric layer 12 contains resin but does not contain glass fiber. The ground electrode 220 is interposed between the first dielectric layer 11 and the second dielectric layer 12. The ground electrode 220 is directly connected to the outer shield layer 6.

[0061] The above configuration improves the reliability of shielding. More specifically, the above configuration allows the first dielectric layer 11 to contain resin but not glass fiber, and the second dielectric layer 12 to contain resin but not glass fiber. This reduces the difference in linear expansion coefficient between the first dielectric layer 11 and the second dielectric layer 12 while reducing the thickness of the mounting board 1 compared to when one of the first and second dielectric layers is formed using prepreg. This reduces the difference in linear expansion coefficient between the ground electrode 220 and each of the first and second dielectric layers 11 and 12. This allows the ground electrode 220, which is interposed between the first and second dielectric layers 11 and 12 and directly connected to the external shield layer 6, to more easily follow the movements of the first and second dielectric layers 11 and 12 that occur with temperature changes. Therefore, the above configuration reduces the stress applied to the ground electrode 220, making it less likely for disconnections to occur near the connection between the ground electrode 220 and the external shield layer 6, thereby improving the reliability of shielding.

[0062] The high-frequency module 100 according to the first embodiment further includes a plurality of external connection terminals 7. The plurality of external connection terminals 7 are arranged on the second main surface 102 of the mounting substrate 1. At least one of the plurality of external connection terminals 7 overlaps a ground electrode 220 in the thickness direction D1 of the mounting substrate 1. The ground electrode 220 contains copper. The external connection terminal 7 overlapping the ground electrode 220 contains copper.

[0063] According to the above configuration, the ground electrode 220 is less likely to warp, and the reliability of the shielding can be further improved compared to when there is no external connection terminal 7 that overlaps the ground electrode 220 in the thickness direction D1 of the mounting substrate 1.

[0064] Furthermore, in the high-frequency module 100 according to embodiment 1, in the thickness direction D1 of the mounting substrate 1, the distance L2 between the ground electrode 220 and the second main surface 102 of the mounting substrate 1 is shorter than the distance L1 between the ground electrode 220 and the first main surface 101 of the mounting substrate 1.

[0065] According to the above configuration, it is possible to further shorten the distance L2 between the ground electrode 220 directly connected to the external shield layer 6 and the second main surface 102 of the mounting substrate 1, thereby further improving the shielding performance. More specifically, it is possible to further shorten the distance between the ground electrode 220 and the ground terminal, which is the external connection terminal 7 overlapping the ground electrode 220, thereby further improving the shielding performance.

[0066] In the high-frequency module 100 according to the first embodiment, the second main surface 102 of the mounting substrate 1 includes a main surface 112 of the first dielectric layer 11 on the side opposite to the second dielectric layer 12 side.

[0067] According to the above configuration, it is possible to further improve the shielding properties.

[0068] In the high-frequency module 100 according to the first embodiment, the mounting substrate 1 further includes a third dielectric layer 13, a fourth dielectric layer 14, and a fifth dielectric layer 15. The third dielectric layer 13 contains a resin and glass fiber. The fourth dielectric layer 14 contains a resin but does not contain glass fiber. The fifth dielectric layer 15 contains a resin but does not contain glass fiber. In the thickness direction D1 of the mounting substrate 1, the first dielectric layer 11, the second dielectric layer 12, the third dielectric layer 13, the fourth dielectric layer 14, and the fifth dielectric layer 15 are arranged in this order.

[0069] According to the above configuration, it is possible to further suppress warping of the mounting substrate 1, and it is possible to further improve the reliability of the shielding properties.

[0070] Moreover, the high-frequency module 100 according to the first embodiment further includes a second electronic component 8 that is different from the first electronic component 3, which is the electronic component 3. The second electronic component 8 is disposed on the second main surface 102 of the mounting substrate 1.

[0071] According to the above configuration, the high-frequency module 100 can be made smaller.

[0072] The high-frequency module 100 according to the first embodiment further includes a second resin layer 19 that is different from the first resin layer 5. The second resin layer 19 is disposed on the second main surface 102 of the mounting substrate 1, and covers the second electronic component 8.

[0073] According to the above configuration, it is possible to further reduce the warpage of the mounting substrate 1 while miniaturizing the high-frequency module 100.

[0074] The communication device 300 according to the first embodiment includes the high-frequency module 100 and a signal processing circuit 301. The signal processing circuit 301 is connected to the high-frequency module 100.

[0075] According to the above configuration, it is possible to improve the reliability of the shielding property.

[0076] (Embodiment 2) A high-frequency module 100A according to the second embodiment will be described with reference to Fig. 6. Regarding the high-frequency module 100A according to the second embodiment, the same components as those in the high-frequency module 100 according to the first embodiment (see Figs. 1 to 5) are denoted by the same reference numerals, and description thereof will be omitted.

[0077] (1) Composition The high-frequency module 100A according to the second embodiment differs from the high-frequency module 100 according to the first embodiment in that the third dielectric layer 13 in the mounting substrate 1 contains resin but does not contain glass fiber.

[0078] In this embodiment, the third dielectric layer 13 is formed using RCC rather than prepreg. In short, in this embodiment, the third dielectric layer 13 is formed using an RCC resin layer, similar to the first dielectric layer 11, the second dielectric layer 12, the fourth dielectric layer 14, and the fifth dielectric layer 15. The material of the third dielectric layer 13 is the same as the material of the first dielectric layer 11, the second dielectric layer 12, the fourth dielectric layer 14, and the fifth dielectric layer 15, but may be different from the material of the first dielectric layer 11, the second dielectric layer 12, the fourth dielectric layer 14, and the fifth dielectric layer 15.

[0079] In the high-frequency module 100A according to the second embodiment, the mounting substrate 1 has a plurality of dielectric layers between the first main surface 101 and the second main surface 102, including a first dielectric layer 11 and a second dielectric layer 12. The plurality of dielectric layers includes the first dielectric layer 11, the second dielectric layer 12, the third dielectric layer 13, the fourth dielectric layer 14, and the fifth dielectric layer 15. The number of the plurality of dielectric layers is not limited to five, and may be three, four, six, or more.

[0080] (2) Effects In the high-frequency module 100A according to the second embodiment, similar to the high-frequency module 100 according to the first embodiment, the ground electrode 220 interposed between the first dielectric layer 11 and the second dielectric layer 12 is directly connected to the external shielding layer 6, thereby improving the reliability of the shielding properties.

[0081] In the high-frequency module 100A according to the second embodiment, the mounting substrate 1 has a plurality of dielectric layers, including a first dielectric layer 11 and a second dielectric layer 12, between the first main surface 101 and the second main surface 102. Each of the plurality of dielectric layers contains resin but does not contain glass fiber.

[0082] According to the above configuration, it is possible to further suppress warping of the mounting substrate 1, and it is possible to further improve the reliability of the shielding properties.

[0083] (Embodiment 3) A high-frequency module 100B according to the third embodiment will be described with reference to Fig. 7. Regarding the high-frequency module 100B according to the third embodiment, the same components as those in the high-frequency module 100 according to the first embodiment (see Figs. 1 to 5) are denoted by the same reference numerals, and description thereof will be omitted.

[0084] (1) Composition The high-frequency module 100B according to the third embodiment differs from the high-frequency module 100 according to the first embodiment in that the high-frequency module 100B includes a plurality of external connection terminals 7B instead of the plurality of external connection terminals 7 in the high-frequency module 100 according to the first embodiment. The high-frequency module 100B also differs from the high-frequency module 100 in that the high-frequency module 100 does not include the second resin layer 19.

[0085] Each of the plurality of external connection terminals 7B is a ball bump. The material of the ball bump constituting each of the plurality of external connection terminals 7B includes, for example, copper or solder. The solder is, for example, SnAgCu. The linear expansion coefficient of SnAgCu is, for example, 21×10 -6 / K~22×10 -6 / K.

[0086] The high-frequency module 100B includes an underfill portion 20. The underfill portion 20 is interposed between the second electronic component 8 and the second main surface 102 of the mounting substrate 1. The second electronic component 8 is an IC chip, and is flip-chip mounted on the second main surface 102 of the mounting substrate 1.

[0087] (2) Effects In the high-frequency module 100B according to the third embodiment, similar to the high-frequency module 100 according to the first embodiment, the ground electrode 220 interposed between the first dielectric layer 11 and the second dielectric layer 12 is directly connected to the external shielding layer 6, thereby improving the reliability of the shielding properties.

[0088] The high-frequency module 100B according to the third embodiment further includes a plurality of external connection terminals 7. The plurality of external connection terminals 7 are arranged on the second main surface 102 of the mounting substrate 1. At least one of the plurality of external connection terminals 7 overlaps a ground electrode 220 in the thickness direction D1 of the mounting substrate 1. The ground electrode 220 contains copper. The external connection terminal 7 overlapping the ground electrode 220 contains at least one of copper and solder.

[0089] According to the above configuration, the ground electrode 220 is less likely to warp, and the reliability of the shielding can be further improved compared to a case where there is no external connection terminal 7B that overlaps the ground electrode 220 in the thickness direction D1 of the mounting substrate 1.

[0090] (Embodiment 4) A high-frequency module 100C according to the fourth embodiment will be described with reference to Fig. 8. Regarding the high-frequency module 100C according to the fourth embodiment, the same components as those in the high-frequency module 100 according to the first embodiment (see Figs. 1 to 5) are denoted by the same reference numerals, and description thereof will be omitted.

[0091] (1) Composition The high-frequency module 100C according to the fourth embodiment differs from the high-frequency module 100 according to the first embodiment in that it does not include the second electronic component 8, the plurality of external connection terminals 7, and the second resin layer 19 that are arranged on the second main surface 102 of the mounting substrate 1 in the high-frequency module 100 according to the first embodiment.

[0092] (2) Effects In the high-frequency module 100C according to the fourth embodiment, similar to the high-frequency module 100 according to the first embodiment, the ground electrode 220 interposed between the first dielectric layer 11 and the second dielectric layer 12 is directly connected to the external shielding layer 6, thereby improving the reliability of the shielding properties.

[0093] The above-described first to fourth embodiments are merely examples of various embodiments of the present invention. The above-described first to fourth embodiments can be modified in various ways depending on the design and the like, and may be combined as appropriate, as long as the object of the present invention can be achieved.

[0094] For example, each of the first dielectric layer 11 and the second dielectric layer 12 may be configured not to contain a filler.

[0095] For example, the external shield layer 6 is not limited to covering the entire outer peripheral surface 103 of the mounting substrate 1 and the resin layer 5, but may cover at least a portion of the outer peripheral surface 103 of the mounting substrate 1 and the resin layer 5.

[0096] In addition, in the high-frequency modules 100, 100A, 100B, and 100C, the main surface of at least one of the multiple first electronic components 3 opposite to the main surface facing the mounting substrate 1 may be in contact with the external shielding layer 6 without being covered by the first resin layer 5.

[0097] Furthermore, in the high-frequency modules 100 and 100A, the second resin layer 19 covers the main surface of the second electronic component 8 opposite to the mounting substrate 1 side, but the second resin layer 19 may not cover the main surface of the second electronic component 8 opposite to the mounting substrate 1 side.

[0098] Furthermore, some of the circuit components of the high-frequency circuit included in the high-frequency module may be configured by one or more conductor portions of the mounting substrate 1.

[0099] Furthermore, the high-frequency modules 100, 100B, and 100C may have three or more dielectric layers located on the first main surface 101 side of the mounting substrate 1 as viewed from the third dielectric layer 13, each formed using RCC, and three or more dielectric layers (including the first dielectric layer 11 and the second dielectric layer 12) located on the second main surface 102 side of the mounting substrate 1, each formed using RCC. In this case, it is preferable that the number of three or more dielectric layers located on the first main surface 101 side of the mounting substrate 1 as viewed from the third dielectric layer 13 is the same as the number of three or more dielectric layers located on the second main surface side of the mounting substrate 1 as viewed from the third dielectric layer 13. Furthermore, in the high-frequency module 100B according to the third embodiment or the high-frequency module 100C according to the fourth embodiment, similarly to the high-frequency module 100A according to the second embodiment, the mounting substrate 1 may have a plurality of dielectric layers, including the first dielectric layer 11 and the second dielectric layer 12, between the first main surface 101 and the second main surface 102, each of which contains resin but does not contain glass fiber.

[0100] Furthermore, in the high-frequency module 100 according to the first embodiment, at least one of the plurality of external connection terminals 7 may be replaced with the external connection terminal 7B of the high-frequency module 100B according to the third embodiment.

[0101] Furthermore, the external connection terminal 7 overlapping the ground electrode 220 may contain both copper and solder.

[0102] Furthermore, the external connection terminal 7 overlapping the ground electrode 220 may be a terminal other than a ground terminal.

[0103] The communication device 300 may include multiple antennas including the antenna 310, and the multiple antennas may be connected to the high-frequency module 100.

[0104] Moreover, the communication device 300 may include, instead of the high-frequency module 100, any one of the high-frequency modules 100A, 100B, and 100C.

[0105] (Aspect) The present specification discloses the following aspects.

[0106] A high-frequency module (100; 100A; 100B; 100C) according to a first aspect includes a mounting substrate (1), an electronic component (3), a resin layer (5), and an external shielding layer (6). The mounting substrate (1) has a first main surface (101) and a second main surface (102) facing each other. The electronic component (3) is disposed on the first main surface (101) of the mounting substrate (1). The resin layer (5) is disposed on the first main surface (101) of the mounting substrate (1) and covers the electronic component (3). The external shielding layer (6) covers at least a portion of the outer peripheral surface (103) of the mounting substrate (1) and the resin layer (5). The mounting substrate (1) includes a first dielectric layer (11), a second dielectric layer (12), and a ground electrode (220). The first dielectric layer (11) contains resin but does not contain glass fiber. The second dielectric layer (12) overlaps the first dielectric layer (11) in the thickness direction (D1) of the mounting substrate (1) and is in contact with the first dielectric layer (11). The second dielectric layer (12) contains resin but does not contain glass fiber. The ground electrode (220) is interposed between the first dielectric layer (11) and the second dielectric layer (12). The ground electrode (220) is directly connected to the external shield layer (6).

[0107] According to this aspect, it is possible to improve the reliability of the shielding property.

[0108] The high-frequency module (100; 100A; 100B; 100C) according to the second aspect is the same as that according to the first aspect, but further includes a plurality of external connection terminals (7; 7B). The plurality of external connection terminals (7; 7B) are arranged on a second main surface (102) of the mounting substrate (1). At least one of the plurality of external connection terminals (7; 7B) overlaps a ground electrode (220) in the thickness direction (D1) of the mounting substrate (1). The ground electrode (220) contains copper. The external connection terminal (7; 7B) overlapping the ground electrode (220) contains at least one of copper and solder.

[0109] According to this aspect, it is possible to further improve the reliability of the shielding property.

[0110] A high-frequency module (100; 100A; 100B; 100C) according to a third aspect is based on the second aspect. In the high-frequency module (100; 100A; 100B; 100C), the distance between the ground electrode (220) and the second main surface (102) of the mounting substrate (1) in the thickness direction (D1) of the mounting substrate (1) is shorter than the distance between the ground electrode (220) and the first main surface (101) of the mounting substrate (1).

[0111] According to this embodiment, the distance (L2) between the ground electrode (220) directly connected to the external shield layer (6) and the second main surface (102) of the mounting substrate (1) can be made shorter, thereby further improving the shielding properties.

[0112] In the high-frequency module (100; 100A; 100B; 100C) according to the fourth aspect, in the second aspect, the second main surface (102) of the mounting substrate (1) includes a main surface (112) of the first dielectric layer (11) opposite to the second dielectric layer (12) side.

[0113] According to this aspect, it is possible to further improve the shielding properties.

[0114] A high-frequency module (100; 100B; 100C) according to a fifth aspect is any one of the first to fourth aspects, wherein the mounting substrate (1) further includes a third dielectric layer (13), a fourth dielectric layer (14), and a fifth dielectric layer (15). The third dielectric layer (13) contains resin and glass fiber. The fourth dielectric layer (14) contains resin but does not contain glass fiber. The fifth dielectric layer (15) contains resin but does not contain glass fiber. In a thickness direction (D1) of the mounting substrate (1), the first dielectric layer (11), the second dielectric layer (12), the third dielectric layer (13), the fourth dielectric layer (14), and the fifth dielectric layer (15) are arranged in this order: the first dielectric layer (11), the second dielectric layer (12), the third dielectric layer (13), the fourth dielectric layer (14), and the fifth dielectric layer (15).

[0115] According to this embodiment, it is possible to further suppress warping of the mounting board (1), and it is possible to further improve the reliability of the shielding property.

[0116] In a high-frequency module (100A) according to a sixth aspect, in any one of the first to fourth aspects, the mounting substrate (1) has a plurality of dielectric layers, including a first dielectric layer (11) and a second dielectric layer (12), between a first main surface (101) and a second main surface (102). Each of the plurality of dielectric layers contains resin and does not contain glass fiber.

[0117] According to this embodiment, it is possible to further suppress warping of the mounting board (1), and it is possible to further improve the reliability of the shielding property.

[0118] A high-frequency module (100; 100A; 100B) according to a seventh aspect is any one of the first to sixth aspects, further comprising a second electronic component (8). The second electronic component (8) is different from the first electronic component (3), which is the electronic component (3). The second electronic component (8) is disposed on a second main surface (102) of the mounting substrate (1).

[0119] According to this aspect, it is possible to reduce the size of the high-frequency module (100; 100A; 100B).

[0120] A high-frequency module (100; 100A) according to an eighth aspect is the same as any one of the first to fourth aspects, and further includes a second resin layer (19) different from the first resin layer (5), which is the resin layer (5). The second resin layer (19) is disposed on the second main surface (102) of the mounting substrate (1) and covers the second electronic component (8).

[0121] According to this aspect, it is possible to further suppress warping of the mounting board (1) while miniaturizing the high frequency module (100; 100A).

[0122] In a high-frequency module (100; 100A; 100B; 100C) according to a ninth aspect, in any one of the first to eighth aspects, each of the first dielectric layer (11) and the second dielectric layer (12) further contains a filler.

[0123] A communication device (300) according to a tenth aspect includes a high-frequency module (100; 100A; 100B; 100C) according to any one of the first to ninth aspects, and a signal processing circuit (301). The signal processing circuit (301) is connected to the high-frequency module (100; 100A; 100B; 100C).

[0124] According to this aspect, it is possible to improve the reliability of the shielding property. [Explanation of symbols]

[0125] 1 Mounting board 101 First main surface 102 Second main surface 103 Outer surface 11 First dielectric layer 112 Main surface 12 Second dielectric layer 13 Third dielectric layer 14 Fourth dielectric layer 15 5th dielectric layer 151 Main Surface 17 First resist layer 171 Main Surface 174 Aperture 18 Second resist layer 181 Main Surface 184 Aperture 21 First conductive layer 211 Second pad electrode 212 Third pad electrode 22 Second conductive layer 220 Ground electrode (first ground electrode) 223 Side edge 23 Third conductive layer 230 Second ground electrode 233 Side edge 24 Fourth conductive layer 25 5th conductive layer 26 6th conductive layer 261 First pad electrode 3 Electronic Components (First Electronic Components) 4 Joint 5 Resin layer (1st resin layer) 6 outer shield layer 61 First Shield Section 62 Second Shield Section 7, 7B external connection terminal 8 Secondary Electronic Components 9 Joint 19 Second resin layer 100, 100A, 100B, 100C high frequency modules 300 Communication Equipment 301 Signal Processing Circuit 302 RF signal processing circuit 303 Baseband signal processing circuit 310 Antenna D1 thickness direction L1 distance L2 distance V1 First via conductor V2 Second via conductor V3 Third via conductor V4 Fourth via conductor V5 Fifth via conductor

Claims

1. a mounting substrate having a first main surface and a second main surface facing each other; an electronic component disposed on the first main surface of the mounting substrate; a resin layer disposed on the first main surface of the mounting substrate and covering the electronic components; an outer shield layer covering at least a part of the outer peripheral surface of the mounting substrate and the resin layer, The mounting board is a first dielectric layer containing resin and not containing glass fiber; a second dielectric layer that contains resin but does not contain glass fiber, the second dielectric layer overlapping the first dielectric layer in the thickness direction of the mounting substrate and being in contact with the first dielectric layer; a ground electrode interposed between the first dielectric layer and the second dielectric layer, the ground electrode is directly connected to the outer shield layer; High frequency module.

2. a plurality of external connection terminals disposed on the second main surface of the mounting substrate; At least one of the plurality of external connection terminals overlaps the ground electrode in the thickness direction of the mounting substrate, the ground electrode includes copper; the external connection terminal overlapping the ground electrode includes at least one of copper and solder; The high frequency module according to claim 1 .

3. a distance between the ground electrode and the second main surface of the mounting substrate in the thickness direction of the mounting substrate is shorter than a distance between the ground electrode and the first main surface of the mounting substrate; The high frequency module according to claim 2 .

4. the second main surface of the mounting substrate includes a main surface of the first dielectric layer opposite to the second dielectric layer side, The high frequency module according to claim 2 .

5. The mounting board is a third dielectric layer including glass fiber and resin; a fourth dielectric layer containing resin and not containing glass fiber; a fifth dielectric layer containing resin but not glass fiber; the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer, and the fifth dielectric layer are arranged in this order in the thickness direction of the mounting substrate; The high frequency module according to any one of claims 1 to 4.

6. The mounting board is a plurality of dielectric layers including the first dielectric layer and the second dielectric layer between the first main surface and the second main surface; each of the plurality of dielectric layers contains resin and does not contain glass fiber; The high frequency module according to any one of claims 1 to 4.

7. The electronic component further includes a second electronic component that is different from the first electronic component and is disposed on the second main surface of the mounting substrate. The high frequency module according to any one of claims 1 to 4.

8. a second resin layer that is different from the first resin layer and is disposed on the second main surface of the mounting substrate and covers the second electronic component; The high frequency module according to claim 7 .

9. each of the first dielectric layer and the second dielectric layer includes a filler; The high frequency module according to any one of claims 1 to 4.

10. a high-frequency module according to any one of claims 1 to 4; a signal processing circuit connected to the high-frequency module. Communication equipment.

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