Semiconductor device

Abstract

To provide a case-sealed semiconductor device capable of improving heat dissipation.SOLUTION: A semiconductor device 100 includes a substrate 1, a semiconductor element 3, a case 4, a sealing resin 8, and a lid 10. The semiconductor element 3 is connected onto the substrate 1. The case 4 houses the substrate 1 and the semiconductor element 3. The sealing resin 8 seals the semiconductor element 3 within the case 4. The lid 10 is disposed within the case 4 and covers the sealing resin 8 from above. The lid 10 is made of both a resin material 11 and a metal material 12 mixed into the resin material 11.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Power semiconductor modules generate a large amount of heat due to the large current that flows through them during use. For this reason, it is important to improve the heat dissipation performance of power semiconductor modules. For example, Japanese Patent Application Laid-Open No. 2018-182220 (Patent Document 1) discloses a technology for dissipating heat generated by semiconductor elements using a heat sink. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-182220 Summary of the Invention [Problem to be solved by the invention]

[0004] There are two types of power semiconductor modules: case-sealed and mold-sealed. Generally, case-sealed modules have a sealing lid. The lid may prevent heat generated by the semiconductor element from being released to the outside. However, JP 2018-182220 A discloses only mold-sealed modules. JP 2018-182220 A does not propose any technology for improving the heat dissipation of case-sealed modules.

[0005] The present disclosure has been made to solve the above-mentioned problems, and an object of the present disclosure is to provide a case-sealed semiconductor device that can improve heat dissipation. [Means for solving the problem]

[0006] A semiconductor device according to a first aspect of the present disclosure includes a substrate, a semiconductor element, a case, a sealing resin, and a lid. The semiconductor element is connected to the substrate. The case houses the substrate and the semiconductor element. The sealing resin seals the semiconductor element within the case. The lid is disposed within the case and covers the sealing resin from above. The lid is made of both a resin material and a metal material mixed with the resin material.

[0007] A semiconductor device according to a second aspect of the present disclosure includes a substrate, a semiconductor element, a case, a sealing resin, and a lid. The semiconductor element is connected to the substrate. The case houses the substrate and the semiconductor element. The sealing resin seals the semiconductor element within the case. The lid is disposed within the case and covers the sealing resin from above. The lid contains a resin material and carbon fiber in an amount of 10% by mass or more and 20% by mass or less of the entire lid.

[0008] A semiconductor device according to a third aspect of the present disclosure includes a substrate, a semiconductor element, a case, a sealing resin, and a lid. The semiconductor element is connected to the substrate. The case houses the substrate and the semiconductor element. The sealing resin seals the semiconductor element in the case. The lid is disposed inside the case and covers the sealing resin from above. The lid is mainly composed of a resin material. The resin material contains a filler. The filler has polarity and is arranged so that the molecules of the filler are oriented in a certain direction. [Effects of the Invention]

[0009] According to the present disclosure, the heat dissipation performance of the lid is improved, and therefore, a case-sealed semiconductor device capable of improving heat dissipation performance can be provided. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present invention; [Figure 2] 2 is a schematic cross-sectional view showing a lid placement step during the manufacture of the semiconductor device of FIG. 1. FIG. [Figure 3] FIG. 2 is a schematic diagram showing the configuration of the lid in the first embodiment. [Figure 4] FIG. 11 is a schematic diagram showing the configuration of a lid in a third embodiment. [Figure 5] FIG. 10 is a schematic diagram showing the state of the lid raw material in the fourth embodiment. [Figure 6] FIG. 10 is a schematic diagram showing the structure of the lid after completion in the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Embodiment 1 <Configuration of semiconductor device> Fig. 1 is a schematic cross-sectional view of a semiconductor device according to the present embodiment. As shown in Fig. 1, the semiconductor device 100 according to the present embodiment is a so-called power semiconductor module. The semiconductor device 100 includes a substrate 1. The substrate 1 includes a base 1a, an insulating layer 1b, and an electrode plate 1c. The insulating layer 1b is stacked on the base 1a. The electrode plate 1c is stacked on the insulating layer 1b.

[0012] The base 1a has, for example, a rectangular planar shape and has a shape with an approximately constant thickness in the vertical direction of FIG. 1. Such a shape will be referred to as a flat plate shape hereinafter. The base 1a is made of metal. The base 1a is formed of, for example, copper or aluminum. The insulating layer 1b has a flat plate shape. The insulating layer 1b is formed of resin or ceramic. More specifically, the ceramic material forming the insulating layer 1b may be, for example, alumina (Al2O3), aluminum nitride (AlN), or silicon nitride (Si3N4). The insulating layer 1b may be an insulating substrate. The electrode plate 1c is formed of, for example, copper or aluminum. The electrode plate 1c has a flat plate shape. The electrode plate 1c functions as a circuit pattern. The electrode plate 1c may be connected to the insulating layer 1b by soldering.

[0013] A semiconductor chip 3 serving as a semiconductor element is connected to the substrate 1. The semiconductor chip 3 is smaller than the substrate 1 in plan view. Therefore, multiple semiconductor chips 3 are connected to the substrate 1 at intervals. The semiconductor chip 3 has a flat plate shape. The semiconductor chip 3 is mounted by soldering on the substrate 1, particularly on the electrode plate 1c. The semiconductor chip 3 is an IGBT chip (Insulated Gate Bipolar Transistor) or a diode chip.

[0014] The substrate 1 and the semiconductor chip 3 are housed in a case 4. The case 4 is arranged to surround the substrate 1 and the semiconductor chip 3 in a plan view. The case 4 is made of an insulating material with high mechanical strength and insulation properties. The case 4 is made of a commonly known material such as PPS (Poly Phenylene Sulfide Resin) or a liquid crystal polymer. At least a portion of the substrate 1 (for example, the insulating layer 1b and the electrode plate 1c) is housed in the case 4. However, the bottom surface of the base 1a of the substrate 1 (the surface opposite to the side to which the insulating layer 1b is connected) may be exposed from the case 4.

[0015] Terminals 5 may be arranged inside the case 4. The terminals 5 are arranged at a distance from the semiconductor chip 3. The terminals 5 are made of copper, a copper alloy, or the like. The terminals 5 include a first portion 5a and a second portion 5b. The first portion 5a is housed inside the case 4. The second portion 5b is arranged to protrude outside the case 4. In other words, the terminals 5 extend from the inside to the outside of the case 4. In this way, the terminals 5 electrically connect the semiconductor device 100 to an external device.

[0016] Pads 6 are formed on part of the inner wall surface of case 4 on the side that houses substrate 1, etc. If the inner wall surface of case 4 has a step, for example, as shown in Figure 1, pads 6 may be formed on the part of the inner wall surface that expands horizontally due to the step. Pads 6 are thin films of a conductive material such as copper or aluminum.

[0017] A plurality of wires 7 are bonded to the upper surface of the semiconductor chip 3. The wires 7 are made of gold, silver, copper, or aluminum. The wires 7 electrically connect one of the plurality of semiconductor chips 3 to another. The wires 7 electrically connect one semiconductor chip 3 to the first portion 5a. The wires 7 may also electrically connect one semiconductor chip 3 to the pad 6. The wires 7 may also electrically connect the electrode plate 1c to the first portion 5a.

[0018] The semiconductor chip 3 in the case 4 is sealed with sealing resin 8. The sealing resin 8 is made of, for example, epoxy resin. In addition to the semiconductor chip 3, the sealing resin 8 seals the insulating layer 1b and electrode plate 1c of the substrate 1, in particular, and the first portions 5a of the terminals 5. At least a portion of the terminals 5 is embedded in the sealing resin 8.

[0019] A lid 10 is disposed inside the case 4. The lid 10 covers the sealing resin 8 from above. In other words, the lid 10 is placed so as to contact the upper surface of the sealing resin 8. The lid 10 has a flat plate shape. The lid 10 may have a through-hole in part thereof through which the terminal 5 can pass.

[0020] FIG. 2 is a schematic cross-sectional view showing a lid placement step during the manufacturing of the semiconductor device of FIG. 1. As shown in FIG. 2, the manufacturing process of the semiconductor device 100 of FIG. 1 involves the following processes: An insulating layer 1b is connected onto a base 1a with a bonding material. "On the base 1a" refers to the upper main surface of the base 1a. This also applies to the following: An electrode plate 1c is connected onto the insulating layer 1b with a bonding material such as solder. Multiple semiconductor chips 3 are connected to the electrode plate 1c with spaces between them using solder. The resulting substrate 1 with the semiconductor chips 3 connected is housed in a case 4. With terminals 5 installed in the case 4 as shown in FIG. 2, a sealing resin 8 is poured into the case 4. At this point, the sealing resin 8 is liquid and not gelled.

[0021] After the sealing resin 8 is injected, the lid 10 is placed on the sealing resin 8 inside the case 4. With the lid 10 placed, the sealing resin 8 is heated and hardened. As a result, the lid 10 and the sealing resin 8 are integrated.

[0022] FIG. 3 is a schematic diagram showing the configuration of the lid in the first embodiment. As shown in FIG. 3, the lid 10 in this embodiment is made of both a resin material 11 and a metal material 12. The metal material 12 is mixed into the resin material 11. The majority of the lid 10 is made of the resin material 11. In other words, the shape of the lid 10 is formed by the resin material 11. The resin material 11 is, for example, PPS (Poly Phenylene Sulfide Resin). The metal material 12 is uniformly mixed inside the resin material 11 that forms the lid 10. As shown in FIG. 3, the metal material 12 may have a shape extending in the left-right direction, i.e., a fine fibrous shape. However, the metal material 12 is not limited to the embodiment shown in FIG. 3, and may have a fine fibrous shape extending, for example, vertically or diagonally in the figure. The metal material 12 may be arranged so as to extend along the thickness direction of the lid 10 (a direction perpendicular to the plane of the paper in FIG. 3). Furthermore, the extending direction of each metal material 12 may differ. Portions of the multiple metal materials 12 may be in contact with each other. Alternatively, the metal material 12 may be in the form of fine particles or spheres. If the metal material 12 is localized in a certain region within the resin material 11, stress will concentrate in that region when heat is applied and the lid 10 deforms. This could result in cracks or breakage in the lid 10. To prevent this, it is preferable that the metal material 12 be uniformly spread (dispersed) throughout the lid 10. Note that while FIG. 3 shows the extension direction of the fibrous metal material 12 as oriented in one direction, the extension directions of the multiple metal materials 12 may be different from each other.

[0023] In the manufacturing process of the lid 10 having the configuration shown in FIG. 3, the resin material 11 and the metal material 12 are mixed together so that the metal material 12 is embedded in the resin material 11. Any conventionally known method can be used to mix the resin material 11 and the metal material 12. Then, the resin material 11 containing the metal material 12 is molded using a mold. This forms the lid 10. As a result, as shown in FIG. 3, a large number of fine particles of the metal material 12 are arranged in the resin material 11 so as to be uniformly dispersed and spaced apart from one another.

[0024] The fact that the lid 10 contains the resin material 11 and the metal material 12 can be confirmed by the following method. First, the lid 10 is pulverized. The substances contained in the obtained powder are measured by a commonly known method. Commonly known methods include infrared spectroscopy and differential scanning calorimetry. Alternatively, the substances contained in the powder may be qualitatively and quantitatively evaluated by nuclear magnetic resonance spectroscopy.

[0025] <Action and effect> A semiconductor device 100 according to this embodiment includes a substrate 1, a semiconductor chip 3, a case 4, a sealing resin 8, and a lid 10. The semiconductor chip 3 is connected onto the substrate 1. The case 4 houses the substrate 1 and the semiconductor chip 3. The sealing resin 8 seals the semiconductor chip 3 within the case 4. The lid 10 is placed within the case 4 and covers the sealing resin 8 from above. The lid 10 is made of both a resin material 11 and a metal material 12 mixed into the resin material 11.

[0026] Generally, metal material 12 has a higher thermal conductivity than resin material 11 such as PPS. For example, the thermal conductivity of PPS is 0.29 W / (m·K). In contrast, the thermal conductivity of aluminum, for example, is 226 W / (m·K). Therefore, compared to a lid 10 made only of resin material 11, a lid 10 including metal material 12 has a higher thermal conductivity. Therefore, in a power semiconductor module, which is an example of a case-sealed semiconductor device 100, heat generated by the semiconductor chip 3 can be efficiently dissipated to the outside via lid 10. In other words, the heat dissipation effect of the entire semiconductor device 100 can be improved.

[0027] In the manufacturing method of this embodiment, the lid 10 is placed on the liquid sealing resin 8, and then the sealing resin 8 is thermally cured. This fixes the lid 10 and the sealing resin 8 together. By integrating the lid 10 and the sealing resin 8, heat generated by the semiconductor chip 3 can be efficiently released to the outside via the sealing resin 8 and the lid 10.

[0028] Embodiment 2 In each of the following embodiments, differences from embodiment 1 will be mainly described. That is, in each of the following embodiments, features such as configuration, materials, manufacturing method, and evaluation method that are similar to those of embodiment 1 will not be described repeatedly as a general rule.

[0029] <Configuration of semiconductor device> The lid 10 of the semiconductor device 100 of this embodiment has a configuration in which a metal material 12 is mixed into a resin material 11, similar to the first embodiment. However, the lid 10 of this embodiment contains at least one of copper and aluminum in an amount of 10% by mass to 30% by mass of the entire lid 10. 10% by mass to 30% by mass of the entire lid 10 means that the amount is 10% by mass to 30% by mass when the entire lid 10 is taken as 100% by mass.

[0030] Either copper or aluminum may be contained in an amount of 10% by mass or 30% by mass or less of the entire lid 10. Alternatively, the lid 10 may contain both copper and aluminum such that the total amount of copper and aluminum contained in the entire lid 10 is 10% by mass or more and 30% by mass or less.

[0031] The manufacturing process for the lid 10 of this embodiment is the same as that of the first embodiment. That is, a resin material 11 and a metal material 12 are mixed together. The mass of either copper or aluminum, or the total mass of both, is adjusted to be 10% by mass or more and 30% by mass or less of the total mass of the lid 10. Then, the mixed material is molded.

[0032] <Action and effect> As in the semiconductor device 100 according to this embodiment, the lid 10 may contain at least one of copper and aluminum in an amount of 10% by mass to 30% by mass of the entire lid 10. This provides the same effects as those of the first embodiment. By including the above materials, the lid 10 can be manufactured with sufficient heat dissipation. Furthermore, by including the above materials in the above proportions, the lid 10 with sufficient heat dissipation can be manufactured at low cost. Specifically, according to this embodiment, the thermal conductivity can be improved by about four to five times compared to a lid of the same shape and dimensions made only of the resin material 11.

[0033] Embodiment 3 <Configuration of semiconductor device> Fig. 4 is a schematic diagram showing the configuration of a lid in embodiment 3. As shown in Fig. 4, lid 10 in this embodiment includes resin material 11 and carbon fiber 13. Lid 10 in this embodiment does not necessarily include metal material 12 in embodiments 1 and 2, but may include it. Carbon fiber 13 accounts for 10% by mass or more and 20% by mass or less of the entire lid 10.

[0034] The manufacturing process of the lid 10 of this embodiment is the same as that of the first and second embodiments. That is, the resin material 11 and the carbon fibers 13 are mixed as raw materials before molding. The fine carbon fibers 13 are mixed in the above-mentioned mass ratio. Then, the resin material 11 is molded. This forms the lid 10. As a result, as shown in FIG. 4, a large number of fine carbon fibers 13 are arranged in the resin material 11 so as to be uniformly dispersed and spaced apart from one another. As shown in FIG. 4, the carbon fibers 13 may have a shape extending in the left-right direction, i.e., a fine fibrous shape. However, the carbon fibers 13 are not limited to the shape shown in FIG. 4, and may have a fine fibrous shape extending, for example, vertically or diagonally in the figure. The carbon fibers 13 may be arranged so as to extend along the thickness direction of the lid 10 (a direction perpendicular to the plane of the paper in FIG. 4). Alternatively, the extending direction of the short carbon fibers 13 may differ for each carbon fiber 13. Some of the multiple carbon fibers 13 may be in contact with each other.

[0035] <Action and effect> A semiconductor device 100 according to this embodiment includes a substrate 1, a semiconductor chip 3, a case 4, a sealing resin 8, and a lid 10. The semiconductor chip 3 is connected onto the substrate 1. The case 4 houses the substrate 1 and the semiconductor chip 3. The sealing resin 8 seals the semiconductor chip 3 within the case 4. The lid 10 is disposed within the case 4 and covers the sealing resin 8 from above. The lid 10 contains a resin material 11 and carbon fibers 13 that account for 10% by mass or more and 20% by mass or less of the entire lid 10.

[0036] The carbon fiber 13 has a much higher thermal conductivity than the resin material 11. The thermal conductivity of PPS is 0.29 W / (m·K). In contrast, the thermal conductivity of the carbon fiber 13 is 900 W / (m·K). Therefore, the lid 10 containing the carbon fiber 13 has a higher thermal conductivity than the lid 10 made only of the resin material 11. For this reason, the inclusion of the carbon fiber 13 can significantly improve the thermal conductivity of the lid 10.

[0037] However, carbon fiber 13 is prone to breakage when a large load is applied. Such a load may be caused by a difference in the linear expansion coefficient between resin material 11 and carbon fiber 13. It is preferable to suppress the load caused by the difference in linear expansion coefficient to a level at which carbon fiber 13 does not break. For this reason, it is preferable to appropriately control the content of carbon fiber 13 relative to resin material 11. As described above, by including carbon fiber 13, lid 10 having sufficient heat dissipation properties can be manufactured. Furthermore, by including carbon fiber 13 in the above ratio, lid 10 having sufficient heat dissipation properties and capable of withstanding loads caused by the difference in linear expansion coefficient can be manufactured. Specifically, according to this embodiment, thermal conductivity can be improved by approximately 300 to 600 times compared to a lid of the same shape and dimensions made only of resin material 11.

[0038] Embodiment 4 <Configuration of semiconductor device> FIG. 5 is a schematic diagram showing the state of the raw material of the lid in embodiment 4. As shown in FIG. 5, the main component of the lid 10 in this embodiment is a resin material 11. In the lid 10 in this embodiment, the resin material 11 contains a filler 14. The filler 14 is mainly composed of a polymer compound. The filler 14 has polarity. The lid 10 in this embodiment does not have to contain the metal material 12 in embodiments 1 and 2, but it may contain it.

[0039] In FIG. 5, each of the multiple fillers 14 has the shape of a fine fiber extending in one direction. In FIG. 5, each of the multiple fillers 14 extends randomly in completely different directions from each other. Next, FIG. 6 is a schematic diagram showing the configuration of the completed lid in embodiment 4. In the raw material state of FIG. 5, an external force is applied to the multiple fillers 14 scattered within the resin material 11. This changes the orientation of the fillers 14 within the resin material 11. The external force may be an electric field or a magnetic field. When the resin material 11 is molded, by applying an external force to the resin material 11, the fillers 14 within the lid 10 are arranged so that the molecular orientation is along a fixed direction, as shown in FIG. 6.

[0040] In Figure 6, as an example, the filler 14 is arranged so as to extend generally in the left-right direction. However, the filler 14 is not limited to the form shown in Figure 6, and may be arranged regularly so as to extend in a diagonal direction in Figure 6, for example. The filler 14 may also be arranged so as to extend along the thickness direction of the lid 10 (the direction perpendicular to the paper surface of Figure 6). In the state shown in Figure 6, the many fine fillers 14 in the resin material 11 are arranged so as to be uniformly dispersed at intervals from one another. Some of the multiple fillers 14 may be in contact with one another.

[0041] In the manufacturing process of the lid 10 of this embodiment, a resin material 11 containing a small amount of filler 14 having polarity may be prepared. If the resin material 11 does not contain filler 14, a small amount of filler 14 having polarity may be added to the resin material 11. Next, if the filler 14 has anisotropy with respect to a magnetic field, electric field, or the like, an external force is applied to the filler 14. The external force causes the molecules of the filler 14 to be aligned in a certain direction. The resin material 11 is hardened while maintaining the applied external force. As a result, a lid 10 is formed in which the molecules are aligned in a certain direction, as shown in FIG. 6.

[0042] <Action and effect> A semiconductor device 100 according to this embodiment includes a substrate 1, a semiconductor chip 3, a case 4, a sealing resin 8, and a lid 10. The semiconductor chip 3 is connected onto the substrate 1. The case 4 houses the substrate 1 and the semiconductor chip 3. The sealing resin 8 seals the semiconductor chip 3 within the case 4. The lid 10 is placed within the case 4 and covers the sealing resin 8 from above. The main component of the lid 10 is a resin material 11. The resin material 11 contains a filler 14. The filler 14 has polarity, and the molecules of the filler 14 are arranged so that they are oriented in a fixed direction.

[0043] The higher the degree of molecular orientation of the filler 14, the higher the thermal conductivity of the lid 10. This improves the heat dissipation of the entire semiconductor device 100. From this perspective, it is preferable that the error in the angle of the extension direction of each of the fillers 14 contained in the lid 10 be 15° or less, and more preferably 10° or less. Furthermore, it is even more preferable that the error in the angle be 5° or less.

[0044] If the lid 10 is formed so that the molecules of the filler 14 are oriented in a certain direction as shown in FIG. 6, the thermal conductivity can be improved by about four to six times compared to when the molecules are randomly oriented.

[0045] Embodiment 5 <Configuration of semiconductor device> In the fourth embodiment, the lid 10 used contains polyparaphenylene benzobisoxazole fiber (hereinafter referred to as PBO fiber) as the filler 14. The PBO fiber content of the lid 10 is 1% by mass or more and 4% by mass or less of the entire lid 10. In other words, the filler 14 content is 1% by mass or more and 4% by mass or less of the entire lid 10 taken as 100% by mass.

[0046] In this embodiment, the filler 14 contained in the resin material 11 is preferably a liquid crystal polymer that has the property of responding to an electric field or a magnetic field before being hardened into the lid 10. Therefore, a material other than PBO fiber may be used as the filler 14. That is, the filler 14 may be either p-phenylene terephthalamide or m-phenylene isophthalamide. Even when the filler is either p-phenylene terephthalamide or m-phenylene isophthalamide, the filler 14 may account for 1% by mass or more and 4% by mass or less of the entire lid 10.

[0047] The manufacturing process for the lid 10 of this embodiment is basically the same as that of the fourth embodiment. For example, when using PBO fiber, a resin material 11 containing a predetermined proportion of PBO fiber is prepared. PBO fiber has the property of changing its orientation in response to a magnetic field. Utilizing this property, a magnetic field is applied to the resin material 11 in a liquid state. The resin material 11 is molded while maintaining the magnetic field applied.

[0048] <Action and effect> As in semiconductor device 100 according to the present embodiment, polyparaphenylene benzobisoxazole fiber may be contained as filler 14 in a proportion of 1% by mass to 4% by mass of the entire lid 10. As in the fourth embodiment, this increases the thermal conductivity of lid 10 by aligning the molecular orientation of the PBO fiber, which is filler 14, in a certain direction. Increasing the degree of molecular orientation of the PBO fiber can improve thermal conductivity by approximately two to five times compared to a lid of the same shape and dimensions made only of resin material 11.

[0049] The lid 10 can have sufficient heat dissipation properties by including PBO fiber in the lid 10. Furthermore, by including PBO fiber in the above ratio, the lid 10 can be manufactured at low cost with sufficient heat dissipation properties.

[0050] The features described in each of the above-described embodiments (each example included therein) may be applied in an appropriate combination within the scope of technical compatibility.

[0051] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims, not by the above description, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0052] 1 substrate, 1a base, 1b insulating layer, 1c electrode plate, 3 semiconductor chip, 4 case, 5 terminal, 5a first part, 5b second part, 6 pad, 7 wire, 8 sealing resin, 10 lid, 11 resin material, 12 metal material, 13 carbon fiber, 14 filler, 100 semiconductor device.

Claims

1. A substrate; a semiconductor element connected to the substrate; a case that accommodates the substrate and the semiconductor element; a sealing resin that seals the semiconductor element in the case; a lid that is disposed in the case and covers the sealing resin from above, The semiconductor device, wherein the lid is made of both a resin material and a metal material mixed with the resin material.

2. 2. The semiconductor device according to claim 1, wherein the lid contains at least one of copper and aluminum in an amount of 10% by mass to 30% by mass of the entire lid.

3. A substrate; a semiconductor element connected to the substrate; a case that accommodates the substrate and the semiconductor element; a sealing resin that seals the semiconductor element in the case; a lid that is disposed in the case and covers the sealing resin from above, The lid includes a resin material and 10% by mass or more and 20% by mass or less of carbon fiber in the entire lid.

4. A substrate; a semiconductor element connected to the substrate; a case that accommodates the substrate and the semiconductor element; a sealing resin that seals the semiconductor element in the case; a lid that is disposed in the case and covers the sealing resin from above, The main component of the lid is a resin material, the resin material includes a filler; The semiconductor device, wherein the filler has polarity and the filler is arranged so that the orientation of the molecules is along a certain direction.

5. The semiconductor device according to claim 4 , wherein the filler comprises polyparaphenylene benzobisoxazole fiber in a proportion of 1% by mass to 4% by mass of the entire lid.

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