Sensor

Abstract

To provide a sensor capable of improving characteristics.SOLUTION: A sensor comprises an element section and a control section. A first detection section of the element section includes a first resistance member and a first conductive member. A second detection section of the element section includes a second resistance member and a second conductive member. A third detection section of the element section includes a third resistance member. The control section performs first to third operations. In the first operation, the control section applies a first voltage to the first conductive member and detects a value corresponding to a difference between a first electrical resistance of the first resistance member and a second electrical resistance of the second resistance member. In the second operation, the control section applies a second voltage to the first conductive member and detects a value corresponding to a difference between the first electrical resistance and a third electrical resistance of the third resistance member. In the third operation, the control section applies a third voltage to the second conductive member and detects a value corresponding to a difference between the second electrical resistance and the third electrical resistance.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION An embodiment of the present invention relates to a sensor. [Background technology]

[0002] For example, there are sensors using MEMS (Micro Electro Mechanical Systems) elements, etc. Improvement of the characteristics of sensors is desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-107162 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide sensors that allow for improved performance. [Means for solving the problem]

[0005] According to an embodiment, the sensor includes an element unit and a control unit. The element unit includes a first element including a first detection unit, a second element including a second detection unit, and a third element including a third detection unit. The first detection unit includes a first resistive element and a first conductive element. The second detection unit includes a second resistive element and a second conductive element. The third detection unit includes a third resistive element. The control unit is configured to perform a first operation, a second operation, and a third operation. In the first operation, the control unit applies a first voltage to the first conductive element and does not apply the first voltage to the second conductive element, and detects a first value corresponding to a first difference between a first electrical resistance of the first resistive element and a second electrical resistance of the second resistive element. In the second operation, the control unit applies a second voltage to the first conductive element and detects a second value corresponding to a second difference between the first electrical resistance and a third electrical resistance of the third resistive element. In the third operation, the control unit applies a third voltage to the second conductive member and detects a third value corresponding to a third difference between the second electrical resistance and the third electrical resistance. [Brief explanation of the drawings]

[0006] [Figure 1] 1(a) to 1(c) are schematic views illustrating the sensor according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 3] 3A and 3B are schematic plan views illustrating the sensor according to the first embodiment. [Figure 4] 4A and 4B are schematic plan views illustrating the sensor according to the first embodiment. [Figure 5] FIG. 5(a) and FIG. 3(b) are schematic plan views illustrating the sensor according to the first embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) 1(a) to 1(c) are schematic views illustrating the sensor according to the first embodiment. 1(a) to 1(c), a sensor 110 according to the embodiment includes an element section 10E and a control section 70. The element section 10E includes a first element 10A, a second element 10B, and a third element 10C.

[0009] First element 10A includes first detection unit 11E, second element 10B includes second detection unit 12E, and third element 10C includes third detection unit 13E.

[0010] The first detection unit 11E includes a first resistance member 11 and a first conductive member 21. The second detection unit 12E includes a second resistance member 12 and a second conductive member 22. The third detection unit 13E includes a third resistance member 13. The third detection unit 13E may include a third conductive member 23.

[0011] The control unit 70 is configured to perform a first operation OP1, a second operation OP2, and a third operation OP3.

[0012] 1(a), in a first operation OP1, the control unit 70 applies a first voltage Vh1 to the first conductive member 21, but does not apply the first voltage Vh1 to the second conductive member 22. In the first operation OP1, the control unit 70 detects a first value Vd1 corresponding to a first difference Δ1 between the first electrical resistance R1 of the first resistance member 11 and the second electrical resistance R2 of the second resistance member 12. The control unit 70 may output the first value Vd1.

[0013] 1(b), in the second operation OP2, the control unit 70 applies a second voltage Vh2 to the first conductive member 21 and detects a second value Vd2 corresponding to a second difference Δ2 between the first electrical resistance R1 of the first resistance member 11 and the third electrical resistance R3 of the third resistance member 13. The control unit 70 may output the second value Vd2. If the third detection unit 13E includes the third conductive member 23, the control unit 70 does not apply the second voltage Vh2 to the third conductive member 23 in the second operation OP2.

[0014] 1(c), in a third operation OP3, the control unit 70 applies a third voltage Vh3 to the second conductive member 22 and detects a third value Vd3 corresponding to a third difference Δ3 between the second electrical resistance R2 of the second resistance member 12 and the third electrical resistance R3 of the third resistance member 13. The control unit 70 may output the third value Vd3.

[0015] In the first operation OP1, a first voltage Vh1 is supplied to the first conductive member 21, causing the temperature of the first conductive member 21 to rise. This causes the temperature of the first detection unit 11E to rise, and the temperature of the first resistance member 11 to rise. The heat dissipation properties of the first detection unit 11E change depending on the detection target (e.g., detection target gas) around the element unit 10E. The temperatures of the first detection unit 11E and the first resistance member 11 change depending on the detection target around the element unit 10E. By detecting the first electrical resistance R1 of the first resistance member 11, information about the detection target can be obtained.

[0016] For example, in the first operation OP1, the second detection unit 12E functions as a reference element. In the first operation OP1, the first difference Δ1 between the first electrical resistance R1 of the first resistance member 11 and the second electrical resistance R2 of the second resistance member 12 is detected, thereby suppressing the influence of, for example, changes in the ambient temperature. Appropriate correction is performed.

[0017] In the second operation OP2, the second voltage Vh2 is supplied to the first conductive member 21, causing the temperature of the first conductive member 21 to rise. This causes the temperature of the first detection unit 11E to rise, and the temperature of the first resistance member 11 to rise. In the second operation OP2, the first electrical resistance R1 of the first resistance member 11 is detected, thereby obtaining information about the detection target. For example, in the second operation OP2, the third detection unit 13E functions as another reference element. In the second operation OP2, the second difference Δ2 between the first electrical resistance R1 of the first resistance member 11 and the third electrical resistance R3 of the third resistance member 13 is detected, thereby suppressing the influence of, for example, changes in the ambient temperature. Appropriate correction is then performed.

[0018] In the third operation OP3, a third voltage Vh3 is applied to the second conductive member 22, causing the temperature of the second conductive member 22 to rise. This causes the temperature of the second detection unit 12E to rise, and the temperature of the second resistance member 12 to rise. In the third operation OP3, information about the detection target is obtained by detecting the second electrical resistance R2 of the second resistance member 12. In the third operation OP3, the third detection unit 13E functions as a reference element. In the third operation OP3, the third difference Δ3 between the second electrical resistance R2 of the second resistance member 12 and the third electrical resistance R3 of the third resistance member 13 is detected, thereby suppressing the influence of, for example, changes in the ambient temperature. Appropriate correction is then performed.

[0019] As described above, in the first operation OP1, the first detection unit 11E functions as a detection element, and the second detection unit 12E functions as a reference element. In the second operation OP2, the first detection unit 11E functions as a detection element, and the third detection unit 13E functions as a reference element. In the third operation OP3, the second detection unit 12E functions as a detection element, and the third detection unit 13E functions as a reference element.

[0020] In the reference example, first to fourth elements are provided. The first element functions as a detection element, and the second element functions as a reference element. The third element functions as a detection element, and the fourth element functions as a reference element. The four elements make it difficult to miniaturize the sensor.

[0021] In the embodiment, the second detection unit 12E that functions as a reference element in the first operation OP1 functions as a detection element in the third operation OP3. High-precision correction can be performed with fewer elements. High-precision detection becomes possible even with a small sensor. In the embodiment, a sensor that can improve characteristics can be provided.

[0022] In the embodiment, in the first operation OP1, the first electrical resistance R1 responds to the detection target around the element unit 10E. The rate of change of the first electrical resistance R1 in response to the detection target in the first operation OP1 is higher than the rate of change of the second electrical resistance R2 in response to the detection target in the first operation OP1.

[0023] In the second operation OP2, the first electrical resistance R1 responds to the detection target around the element unit 10E. The rate of change of the first electrical resistance R1 in response to the detection target in the second operation OP2 is higher than the rate of change of the third electrical resistance R3 in response to the detection target in the second operation OP2.

[0024] In the third operation OP3, the second electrical resistance R2 responds to the detection target around the element unit 10E. The rate of change of the second electrical resistance R2 in response to the detection target in the third operation OP3 is higher than the rate of change of the third electrical resistance R3 in response to the detection target in the third operation OP3.

[0025] In an embodiment, the control unit 70 may be configured to output a fourth value obtained by calculation using the first value Vd1, the second value Vd2, and the third value Vd3. The fourth value may include a plurality of values. The fourth value may include values ​​corresponding to the respective concentrations of a plurality of types of test substances contained in the detection target.

[0026] For example, the multiple detectable substances may include at least two selected from the group consisting of carbon dioxide, hydrogen, nitrogen, and carbon monoxide. For example, a relational expression can be derived that expresses the relationship between the concentration of each of the multiple detectable substances and the heat dissipation property (detected temperature, i.e., detected electrical resistance). The control unit 70 can derive conditions that satisfy the multiple relational expressions by performing calculations using the first value Vd1, the second value Vd2, and the third value Vd3. The conditions that satisfy the multiple relational expressions correspond to the respective concentrations of the multiple detectable substances contained in the detection target.

[0027] The first difference Δ1, the second difference Δ2, and the third difference Δ3 may be output from, for example, the differential circuit 75. The differential circuit 75 may be included in the control unit .

[0028] 1(a), in a first operation OP1, a current for detection is supplied from the current source 72 to the first resistance element 11 and the second resistance element 12. As shown in FIG. 1(b), in a second operation OP2, a current for detection is supplied from the current source 72 to the first resistance element 11 and the third resistance element 13. As shown in FIG. 1(c), in a third operation OP3, a current for detection is supplied from the current source 72 to the second resistance element 12 and the third resistance element 13. The current source 72 may be included in the control unit 70.

[0029] In the embodiment, the first voltage Vh1 may be different from the second voltage Vh2. By applying different voltages, the first detection unit 11E rises to different temperatures. The reference voltage in the differential detection of the first operation OP1 is different from the reference voltage in the differential detection of the second operation OP2. The detection target can be detected with higher accuracy. For example, multiple types of detection targets can be detected.

[0030] For example, the first power consumption is calculated from the first voltage Vh1 and the first conductive member resistance value of the first conductive member 21. The second power consumption is calculated from the second voltage Vh2 and the first conductive member resistance value of the first conductive member 21. For example, the first power consumption is smaller than the second power consumption. The difference between the first power consumption and the second power consumption is defined as the first power consumption difference. It is desirable that the ratio of the first absolute value of the first power consumption difference to the first power consumption be 0.4 or more. This makes it easier to detect multiple types of detection targets with higher accuracy. This ratio may be, for example, 1.5 or less.

[0031] For example, the first power consumption may be between the third power consumption and the second power consumption. As already explained, the first power consumption is calculated from the first voltage Vh1 and the first conductive member resistance value of the first conductive member 21. The second power consumption is calculated from the second voltage Vh2 and the second conductive member resistance value of the first conductive member 21. The third power consumption is calculated from the third voltage Vh3 and the second conductive member resistance value of the second conductive member 22. For example, the third power consumption may be smaller than the second power consumption. The first power consumption may be between the third power consumption and the second power consumption.

[0032] For example, the third electrical resistance value of the third resistance member 13 at the first temperature T1 may be different from the first electrical resistance value of the first resistance member 11 at the first temperature T1. The third electrical resistance value may be different from the second electrical resistance value of the second resistance member 12 at the first temperature T1.

[0033] As already described, in the first operation OP1, the first voltage Vh1 is supplied to the first conductive member 21. The temperature of the first detection unit 11E when the first voltage Vh1 is supplied to the first conductive member 21 is defined as the first elevated temperature. In the second operation OP2, the second voltage Vh2 is applied to the first conductive member 21. The temperature of the first detection unit 11E when the second voltage Vh2 is applied to the first conductive member 21 is defined as the second elevated temperature. In the third operation OP3, the third voltage Vh3 is applied to the second conductive member 22. The temperature of the second detection unit 12E when the third voltage Vh3 is applied to the second conductive member 22 is defined as the third elevated temperature. The first elevated temperature may correspond to the temperature of the first resistance member 11 in the first operation OP1. The second elevated temperature may correspond to the temperature of the first resistance member 11 in the second operation OP2. The third elevated temperature may correspond to the temperature of the second resistance member 12 in the third operation OP3.

[0034] The first temperature T1 is lower than the temperature (first rising temperature) of the first detection unit 11E in the first operation OP1. The first temperature T1 is lower than the temperature (second rising temperature) of the first detection unit 11E in the second operation OP2. The first temperature T1 is lower than the temperature (third rising temperature) of the second detection unit 12E in the third operation OP3. The first temperature T1 may be, for example, room temperature. The first temperature T1 may be, for example, not lower than -10°C and not higher than +80°C.

[0035] The absolute value of the difference between the first elevated temperature and the second elevated temperature is, for example, 30° C. or more. The absolute value of the difference between the first elevated temperature and the third elevated temperature is, for example, 30° C. or more. The absolute value of the difference between the second elevated temperature and the third elevated temperature is, for example, 30° C. or more. Such temperature differences make it easier to derive with high accuracy values ​​corresponding to the concentrations of multiple types of detection substances contained in the detection target, for example.

[0036] In one example, the third elevated temperature is lower than the second elevated temperature, for example, the first elevated temperature may be between the third elevated temperature and the second elevated temperature.

[0037] For example, the absolute value of the difference between the third electrical resistance value at the first temperature T1 and the first electrical resistance value at the first temperature T1 may be greater than the absolute value of the difference between the first electrical resistance value at the first temperature T1 and the second electrical resistance value at the first temperature T1.

[0038] In the embodiment, the third detection unit 13E may further include a third conductive member 23 (see FIGS. 1(a) to 1(c)). In the second operation OP2, the control unit 70 does not need to apply the second voltage Vh2 to the third conductive member 23. In the third operation OP3, the control unit 70 does not need to apply the third voltage Vh3 to the third conductive member 23.

[0039] Below, examples of the first element 10A, the second element 10B, and the third element 10C will be described. FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. 3(a), 3(b), 4(a), 4(b), 5(a), and 5(b) are schematic plan views illustrating the sensor according to the first embodiment.

[0040] 2, the first element 10A may include a first base region 41a, a first fixing portion 31S, and a first support portion 31C. The first fixing portion 31S is fixed to a portion of the first base region 41a. The first support portion 31C is supported by the first fixing portion 31S. The first support portion 31C supports the first detection portion 11E. A first gap g1 is provided between another portion of the first base region 41a and the first detection portion 11E.

[0041] In this example, the first element 10A further includes a first opposing fixing portion 31aS and a first opposing support portion 31aC. The first opposing fixing portion 31aS is fixed to another portion of the first base region 41a. The first opposing support portion 31aC is supported by the first opposing fixing portion 31aS. The first opposing support portion 31aC supports the first detection portion 11E. For example, the first detection portion 11E is provided between the first support portion 31C and the first opposing support portion 31aC.

[0042] As shown in Figures 3(a) and 3(b), the first element 10A may include a first cross fixing portion 31bS, a first cross supporting portion 31bC, a first cross opposing fixing portion 31cS, and a first cross opposing supporting portion 31cC. The first cross fixing portion 31bS is fixed to another portion of the first base region 41a. The first cross supporting portion 31bC is supported by the first cross fixing portion 31bS. The first cross supporting portion 31bC supports the first detecting portion 11E.

[0043] The first intersecting opposing fixed portion 31cS is fixed to another part of the first base region 41a. The first intersecting opposing support portion 31cC is supported by the first intersecting opposing fixed portion 31cS. The first intersecting opposing support portion 31cC supports the first detection portion 11E.

[0044] The direction from a part of the first base region 41a to the first fixed portion 31S is defined as the Z-axis direction (first direction). The direction from the first support portion 31C to the first opposing support portion 31aC intersects with the Z-axis direction. The direction from the first cross support portion 31bC to the first cross opposing support portion 31cC intersects with the Z-axis direction. The direction from the first cross support portion 31bC to the first cross opposing support portion 31cC intersects with the direction from the first support portion 31C to the first opposing support portion 31aC.

[0045] At least one of the first support portion 31C, the first opposing support portion 31aC, the first cross support portion 31bC, and the first cross opposing support portion 31cC may have a meander structure.

[0046] 2, the second element 10B may include a second base region 41b, a second fixing portion 32S, and a second support portion 32C. The second fixing portion 32S is fixed to a portion of the second base region 41b. The second support portion 32C is supported by the second fixing portion 32S. The second support portion 32C supports the second detection portion 12E. A second gap g2 is provided between another portion of the second base region 41b and the second detection portion 12E.

[0047] In this example, the second element 10B further includes a second opposing fixing portion 32aS and a second opposing support portion 32aC. The second opposing fixing portion 32aS is fixed to another portion of the second base region 41b. The second opposing support portion 32aC is supported by the second opposing fixing portion 32aS. The second opposing support portion 32aC supports the second detection portion 12E. For example, the second detection portion 12E is provided between the second support portion 32C and the second opposing support portion 32aC.

[0048] As shown in Figures 4(a) and 4(b), the second element 10B may include a second cross fixing portion 32bS, a second cross supporting portion 32bC, a second cross opposing fixing portion 32cS, and a second cross opposing supporting portion 32cC. The second cross fixing portion 32bS is fixed to another portion of the second base region 41b. The second cross supporting portion 32bC is supported by the second cross fixing portion 32bS. The second cross supporting portion 32bC supports the second detecting portion 12E.

[0049] The second intersecting opposing fixed portion 32cS is fixed to another part of the second base region 41b. The second intersecting opposing support portion 32cC is supported by the second intersecting opposing fixed portion 32cS. The second intersecting opposing support portion 32cC supports the second detection portion 12E.

[0050] The direction from the portion of the second base region 41b to the second fixed portion 32S may be along the Z-axis direction. The direction from the second support portion 32C to the second opposing support portion 32aC intersects with the direction from the portion of the second base region 41b to the second fixed portion 32S. The direction from the second cross support portion 32bC to the second cross opposing support portion 32cC intersects with the direction from the portion of the second base region 41b to the second fixed portion 32S. The direction from the second cross support portion 32bC to the second cross opposing support portion 32cC intersects with the direction from the second support portion 32C to the second opposing support portion 32aC.

[0051] At least one of the second support portion 32C, the second opposing support portion 32aC, the second cross support portion 32bC, and the second cross opposing support portion 32cC may have a meander structure.

[0052] 2, the third element 10C may include a third base region 41c, a third fixing portion 33S, and a third support portion 33C. The third fixing portion 33S is fixed to a portion of the third base region 41c. The third support portion 33C is supported by the third fixing portion 33S. The third support portion 33C supports the third detection portion 13E. A third gap g3 is provided between another portion of the third base region 41c and the third detection portion 13E.

[0053] In this example, the third element 10C further includes a third opposing fixing portion 33aS and a third opposing support portion 33aC. The third opposing fixing portion 33aS is fixed to another portion of the third base region 41c. The third opposing support portion 33aC is supported by the third opposing fixing portion 33aS. The third opposing support portion 33aC supports the third detection unit 13E. For example, the third detection unit 13E is provided between the third support portion 33C and the third opposing support portion 33aC.

[0054] As shown in Figures 5(a) and 5(b), the third element 10C may include a third cross fixing portion 33bS, a third cross supporting portion 33bC, a third cross opposing fixing portion 33cS, and a third cross opposing supporting portion 33cC. The third cross fixing portion 33bS is fixed to another portion of the third base region 41c. The third cross supporting portion 33bC is supported by the third cross fixing portion 33bS. The third cross supporting portion 33bC supports the third detecting portion 13E.

[0055] The third intersecting opposing fixing portion 33cS is fixed to another part of the third base region 41c. The third intersecting opposing supporting portion 33cC is supported by the third intersecting opposing fixing portion 33cS. The third intersecting opposing supporting portion 33cC supports the third detecting portion 13E.

[0056] The direction from the portion of the third base region 41c to the third fixed portion 33S may be along the Z-axis direction. The direction from the third support portion 33C to the third opposing support portion 33aC intersects with the direction from the portion of the third base region 41c to the third fixed portion 33S. The direction from the third cross support portion 33bC to the third cross opposing support portion 33cC intersects with the direction from the portion of the third base region 41c to the third fixed portion 33S. The direction from the third cross support portion 33bC to the third cross opposing support portion 33cC intersects with the direction from the third support portion 33C to the third opposing support portion 33aC.

[0057] At least one of the third support portion 33C, the third opposing support portion 33aC, the third cross support portion 33bC, and the third cross opposing support portion 33cC may have a meander structure.

[0058] As shown in Fig. 2, the first substrate region 41a is a part of the substrate 41. The second substrate region 41b may be another part of the substrate 41. The third substrate region 41c may be another part of the substrate 41. The first substrate region 41a may be one substrate 41, and the second substrate region 41b may be another substrate. The third substrate region 41c may be another substrate.

[0059] In this example, the base 41 may include a substrate 41s and an insulating layer 41i. The insulating layer 41i is provided on the substrate 41s. The substrate 41s includes a semiconductor substrate or the like. The substrate 41s may include a part of the circuit included in the control unit 70.

[0060] 2, the first detection unit 11E may include a first insulating member 18A. The first insulating member 18A may be provided around the first resistive member 11 and the first conductive member 21. The second detection unit 12E may include a second insulating member 18B. The second insulating member 18B may be provided around the second resistive member 12 and the second conductive member 22. The third detection unit 13E may include a third insulating member 18C. The third insulating member 18C may be provided around the third resistive member 13. The third insulating member 18C may be provided around the third conductive member 23.

[0061] For example, the first resistance member 11 and the second resistance member 12 may satisfy at least one of the first condition, the second condition, and the third condition. In the first condition, the first length L1 (see FIG. 2) of the first resistance member 11 is different from the second length L2 (see FIG. 2) of the second resistance member 12. In the second condition, the first width W1 (see FIG. 3(b)) of the first resistance member 11 is different from the second width W2 (see FIG. 4(b)) of the second resistance member 12. In the third condition, the first thickness t1 (see FIG. 2) of the first resistance member 11 is different from the second thickness t2 of the second resistance member 12.

[0062] For example, the first resistance member 11 and the third resistance member 13 may satisfy at least one of the fourth condition, the fifth condition, and the sixth condition. In the fourth condition, the first length L1 of the first resistance member 11 is different from the third length L3 of the third resistance member 13 (see FIG. 2). In the fifth condition, the first width W1 of the first resistance member 11 is different from the third width W3 of the third resistance member 13 (see FIG. 5(b)). In the sixth condition, the first thickness t1 of the first resistance member 11 is different from the third thickness t3 of the third resistance member 13 (see FIG. 2).

[0063] For example, the second resistance member 12 and the third resistance member 13 may satisfy at least one of the seventh condition, the eighth condition, and the ninth condition. In the seventh condition, the second length L2 of the second resistance member 12 is different from the third length L3 of the third resistance member 13. In the eighth condition, the second width W2 of the second resistance member 12 is different from the third width W3 of the third resistance member 13. In the ninth condition, the second thickness t2 of the second resistance member 12 is different from the third thickness t3 of the third resistance member 13.

[0064] The electrical resistance of the second conductive member 22 may be different from the electrical resistance of the first conductive member 21. The electrical resistance of the third conductive member 23 may be different from the electrical resistance of the first conductive member 21. The electrical resistance of the third conductive member 23 may be different from the electrical resistance of the second conductive member 22.

[0065] In the embodiment, for example, the second temperature T2 of the first resistance member 11 when the first power is supplied to the first conductive member 21 is higher than the first temperature T1. The absolute value of the difference between the first rate of change of the first electrical resistance with respect to temperature at the first temperature T1 and the second rate of change of the second electrical resistance with respect to temperature at the first temperature T1 is defined as the first rate of change difference. The absolute value of the difference between the second rate of change of the second temperature state of the first electrical resistance with respect to temperature at the second temperature T2 and the second rate of change is defined as the second rate of change difference. In the embodiment, the second rate of change difference may be smaller than the first rate of change difference. This allows the detection result obtained from the first element 10A to be corrected with higher accuracy by the second element 10B. Higher accuracy detection is possible. The second temperature T2 may be, for example, substantially the same as the first rising temperature.

[0066] In the embodiment, the third temperature T3 of the first resistance element 11 when the second power is supplied to the first conductive element 21 is higher than the first temperature T1. The absolute value of the difference between the first change rate and the third change rate of the third electrical resistance with respect to temperature at the first temperature T1 is defined as the third change rate difference. The absolute value of the difference between the third temperature state change rate of the first electrical resistance with respect to temperature at the third temperature T3 and the third change rate is defined as the fourth change rate difference. In the embodiment, the fourth change rate difference is smaller than the third change rate difference. This allows the detection result obtained from the first element 10A to be corrected with higher accuracy by the third element 10C. Higher accuracy detection is possible. The third temperature T3 may be, for example, substantially the same as the second rising temperature.

[0067] For example, the first electrical resistance value of the first resistance member 11 at the first temperature T1 may be different from the second electrical resistance value of the second resistance member 12 at the first temperature T1. For example, the first electrical resistance value may be different from the third electrical resistance value of the third resistance member 13 at the first temperature T1. For example, the second electrical resistance value may be different from the third electrical resistance value.

[0068] For example, the fourth temperature T4 of the second resistance element 12 when the third power is supplied to the second conductive element 22 is higher than the first temperature T1. The absolute value of the difference between the second rate of change of the second electrical resistance with respect to temperature at the first temperature T1 and the third rate of change of the third electrical resistance with respect to temperature at the first temperature T1 is defined as the fifth rate of change difference. The absolute value of the difference between the fourth temperature state rate of change of the second electrical resistance with respect to temperature at the fourth temperature T4 and the third rate of change is defined as the sixth rate of change difference. In this embodiment, the sixth rate of change difference may be smaller than the fifth rate of change difference. This allows the detection result obtained from the second element 10B to be corrected with higher accuracy by the third element 10C. Higher accuracy detection is possible. The fourth temperature T4 may be, for example, substantially the same as the third rising temperature.

[0069] The first conductive member 21 and the second conductive member 22 may satisfy at least one of a first conductive member condition, a second conductive member condition, and a third conductive member condition. In the first conductive member condition, the first conductive member length La1 (see FIG. 2) of the first conductive member 21 is different from the second conductive member length La2 (see FIG. 2) of the second conductive member 22. In the second conductive member condition, the first conductive member width Wa1 (see FIG. 3(a)) of the first conductive member 21 is different from the second conductive member width Wa2 (see FIG. 4(a)) of the second conductive member 22. In the third conductive member condition, the first conductive member thickness ta1 (see FIG. 2) of the first conductive member 21 is different from the second conductive member thickness ta2 (see FIG. 2) of the second conductive member 22.

[0070] For example, the first conductive member 21 and the third conductive member 23 may satisfy at least one of a fourth conductive member condition, a fifth conductive member condition, and a sixth conductive member condition. In the fourth conductive member condition, the first conductive member length La1 of the first conductive member 21 is different from the third conductive member length La3 of the third conductive member 23 (see FIG. 2). In the fifth conductive member condition, the first conductive member width Wa1 of the first conductive member 21 is different from the third conductive member width Wa3 of the third conductive member 23 (see FIG. 5(a)). In the sixth conductive member condition, the first conductive member thickness ta1 of the first conductive member 21 is different from the third conductive member thickness ta3 of the third conductive member 23 (see FIG. 2).

[0071] For example, the second conductive member 22 and the third conductive member 23 may satisfy at least one of a seventh conductive member condition, an eighth conductive member condition, and a ninth conductive member condition. In the seventh conductive member condition, the second conductive member length La2 of the second conductive member 22 is different from the third conductive member length La3 of the third conductive member 23. In the eighth conductive member condition, the second conductive member width Wa2 of the second conductive member 22 is different from the third conductive member width Wa3 of the third conductive member 23. In the ninth conductive member condition, the second conductive member thickness ta2 of the second conductive member 22 is different from the third conductive member thickness ta3 of the third conductive member 23.

[0072] In the sensor 110, the first resistive element 11 may be one of a plurality of resistive elements included in a bridge circuit, the second resistive element 12 may be one of a plurality of resistive elements included in a bridge circuit, and the third resistive element 13 may be one of a plurality of resistive elements included in a bridge circuit.

[0073] As shown in FIG. 3(b), the first detection unit 11E may include a first conductive layer 15a and a second conductive layer 15b. The first resistance member 11 is provided between the first conductive layer 15a and the second conductive layer 15b. As shown in FIG. 4(b), the second detection unit 12E may include a third conductive layer 15c and a fourth conductive layer 15d. The second resistance member 12 is provided between the third conductive layer 15c and the fourth conductive layer 15d. As shown in FIG. 5(b), the third detection unit 13E may include a fifth conductive layer 15e and a sixth conductive layer 15f. The third resistance member 13 is provided between the fifth conductive layer 15e and the sixth conductive layer 15f. By providing these conductive layers, for example, warping of the detection unit can be suppressed.

[0074] The embodiments may include the following technical solutions. (Technical proposal 1) an element portion; A control unit; Equipped with The element portion is a first element including a first detection unit; a second element including a second detection unit; a third element including a third detection unit; Including, the first detection unit includes a first resistive member and a first conductive member; the second detection unit includes a second resistive member and a second conductive member, the third detection unit includes a third resistance member, the control unit is configured to perform a first operation, a second operation, and a third operation; In the first operation, the control unit applies a first voltage to the first conductive member and does not apply the first voltage to the second conductive member, and detects a first value corresponding to a first difference between a first electrical resistance of the first resistive member and a second electrical resistance of the second resistive member; In the second operation, the control unit applies a second voltage to the first conductive member and detects a second value corresponding to a second difference between the first electrical resistance and a third electrical resistance of the third resistive member; In the third operation, the control unit applies a third voltage to the second conductive member and detects a third value corresponding to a third difference between the second electrical resistance and the third electrical resistance.

[0075] (Technical proposal 2) The sensor described in Technical Solution 1, wherein the control unit is configured to output a fourth value obtained by calculation using the first value, the second value, and the third value.

[0076] (Technical proposal 3) The sensor described in Technical Proposal 2, wherein the fourth value includes values ​​corresponding to the respective concentrations of multiple types of detection target substances contained in the detection target.

[0077] (Technical proposal 4) The sensor according to Technical Solution 2, wherein the calculation includes compensation for influences from other objects to be detected.

[0078] (Technical proposal 5) The sensor according to any one of Technical Solutions 1 to 4, wherein the first voltage is different from the second voltage.

[0079] (Technical proposal 6) the first power consumption is calculated from the first voltage and a first conductive member resistance value of the first conductive member; the second power consumption is calculated from the second voltage and the first conductive member resistance value; the first power consumption is smaller than the second power consumption; The sensor according to any one of technical proposals 1 to 5, wherein a ratio of a first absolute value of a first power consumption difference between the first power consumption and the second power consumption to the first power consumption is 0.4 or more.

[0080] (Technical proposal 7) the first power consumption is between the third power consumption and the second power consumption; the first power consumption is calculated from the first voltage and a first conductive member resistance value of the first conductive member; the second power consumption is calculated from the second voltage and the first conductive member resistance value; The sensor according to any one of Technical Solutions 1 to 5, wherein the third power consumption is calculated from the third voltage and a second conductive member resistance value of the second conductive member.

[0081] (Technical proposal 8) a third electrical resistance value of the third resistance member at a first temperature is different from a first electrical resistance value of the first resistance member at the first temperature; The sensor according to any one of Technical Solutions 1 to 7, wherein the third electrical resistance value is different from the second electrical resistance value of the second resistance member at the first temperature.

[0082] (Technical proposal 9) the first temperature is lower than the temperature of the first detection unit in the first operation; the first temperature is lower than the temperature of the first detection unit in the second operation; The sensor described in Technical Solution 8, wherein the first temperature is lower than the temperature of the second detection unit in the third operation.

[0083] (Technical proposal 10) The sensor described in Technical Solution 9, wherein the absolute value of the difference between the third electrical resistance value and the first electrical resistance value is greater than the absolute value of the difference between the first electrical resistance value and the second electrical resistance value.

[0084] (Technical proposal 11) The sensor according to any one of Technical Solutions 1 to 10, wherein the electrical resistance of the second conductive member is different from the electrical resistance of the first conductive member.

[0085] (Technical proposal 12) a second temperature of the first resistance member when a first power is supplied to the first conductive member is higher than a first temperature; The second rate difference is smaller than the first rate difference, the first change rate difference is an absolute value of a difference between a first change rate of the first electrical resistance with respect to temperature at the first temperature and a second change rate of the second electrical resistance with respect to temperature at the first temperature; The sensor described in any one of technical proposals 1 to 5, wherein the second change rate difference is the absolute value of the difference between the second temperature state change rate of the first electrical resistance with respect to the temperature at the second temperature and the second change rate.

[0086] (Technical proposal 13) a third temperature of the first resistance member when a second power is supplied to the first conductive member is higher than the first temperature; The fourth change rate difference is smaller than the third change rate difference, the third change rate difference is an absolute value of a difference between the first change rate and a third change rate of the third electrical resistance with respect to temperature at the first temperature, The sensor described in Technical Proposal 12, wherein the fourth change rate difference is the absolute value of the difference between the third temperature state change rate of the first electrical resistance with respect to the temperature at the third temperature and the third change rate.

[0087] (Technical proposal 14) a first electrical resistance value of the first resistance member at the first temperature is different from a second electrical resistance value of the second resistance member at the first temperature; the first electrical resistance value is different from the third electrical resistance value of the third resistance member at the first temperature; The sensor according to Technical Solution 13, wherein the second electrical resistance value is different from the third electrical resistance value.

[0088] (Technical proposal 15) the first resistance member and the second resistance member satisfy at least one of a first condition, a second condition, and a third condition; In the first condition, a first length of the first resistance member is different from a second length of the second resistance member, In the second condition, a first width of the first resistance member is different from a second width of the second resistance member, In the third condition, a first thickness of the first resistance member is different from a second thickness of the second resistance member, the first resistance member and the third resistance member satisfy at least one of a fourth condition, a fifth condition, and a sixth condition; In the fourth condition, the first length is different from the third length of the third resistance member, In the fifth condition, the first width is different from the third width of the third resistance member, In the sixth condition, the first thickness is different from the third thickness of the third resistance member, the second resistance member and the third resistance member satisfy at least one of a seventh condition, an eighth condition, and a ninth condition; In the seventh condition, the second length is different from the third length, In the eighth condition, the second width is different from the third width, The sensor according to any one of Technical Schemes 1 to 14, wherein in the ninth condition, the second thickness is different from the third thickness.

[0089] (Technical proposal 16) The first element is a first substrate region; a first fixing portion fixed to a part of the first base region; a first support portion supported by the first fixed portion and supporting the first detection portion; Including, a first gap is provided between another part of the first substrate region and the first detection unit; The second element is a second substrate region; a second fixing portion fixed to a part of the second base region; a second support portion supported by the second fixed portion and supporting the second detection portion; Including, a second gap is provided between another part of the second substrate region and the second detection unit; The third element is a third substrate region; a third fixing portion fixed to a part of the third base region; a third support portion supported by the third fixed portion and supporting the third detection portion; Including, The sensor according to any one of Technical Schemes 1 to 14, wherein a third gap is provided between another part of the third base region and the third detection portion.

[0090] (Technical proposal 17) the first substrate region is a portion of a substrate; the second substrate region is another portion of the substrate; The sensor according to Technical Solution 16, wherein the third substrate region is another part of the substrate.

[0091] (Technical proposal 18) In the first operation, the first electrical resistance is set according to a detection target around the element unit, The sensor described in Technical Solution 1 or 2, wherein the rate of change of the first electrical resistance with respect to the object to be detected in the first operation is higher than the rate of change of the second electrical resistance with respect to the object to be detected in the first operation.

[0092] (Technical proposal 19) In the second operation, the first electrical resistance is changed depending on the detection target around the element unit, The sensor described in Technical Solution 1 or 2, wherein the rate of change of the first electrical resistance with respect to the detection object in the second operation is higher than the rate of change of the third electrical resistance with respect to the detection object in the second operation.

[0093] (Technical proposal 20) In the third operation, the second electrical resistance is set according to a detection target around the element unit, The sensor described in Technical Solution 1 or 2, wherein the rate of change of the second electrical resistance with respect to the detection object in the third operation is higher than the rate of change of the third electrical resistance with respect to the detection object in the third operation.

[0094] According to the embodiment, a sensor capable of improving characteristics can be provided.

[0095] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements included in the sensor, such as the substrate, detection unit, and control unit, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0096] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0097] In addition, all sensors that can be implemented by a person skilled in the art by appropriately modifying the design based on the sensor described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0098] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0099] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0100] 10A-10C: 1st to 3rd elements, 11-13: 1st to 3rd resistance members, 11E-13E: 1st to 3rd detection members, 15a-15f: 1st to 6th conductive layers, 18A-18C: 1st to 3rd insulation members, 21-23: 1st to 3rd conductive members, 31C-33C: 1st to 3rd support members, 31S-33S: 1st to 3rd fixing members, 31aC-33aC: 1st to 3rd opposing support members, 31aS-33aS: 1st to 3rd opposing fixing members, 31bC-33bC: 1st to 3rd cross support members, 31bS-33bS: 1st to 3rd cross fixing members, 31cC-33cC: First to third cross-directional support portions, 31cS-33cS: First to third cross-directional fixing portions, 41: Base, 41a-41c: First to third base regions, 41i: Insulation layer, 41s: Substrate, 70: Control portion, 72: Current source, 75: Differential circuit, 110: Sensor, L1-L3: First to third lengths, La1-La3: First to third conductive member lengths, OP1-OP3: First to third operations, Vd1-Vd3: First to third values, Vh1-Vh3: First to third voltages, W1-W3: First to third widths, Wa1-Wa3: First to third conductive member widths, g1~g3: 1st to 3rd gaps, t1~t3: 1st to 3rd thicknesses, ta1~ta3: 1st to 3rd conductive part thicknesses

Claims

1. an element portion; A control unit; Equipped with The element portion is a first element including a first detection unit; a second element including a second detection unit; a third element including a third detection unit; Including, the first detection unit includes a first resistive member and a first conductive member, the second detection unit includes a second resistive member and a second conductive member, the third detection unit includes a third resistance member, the control unit is configured to perform a first operation, a second operation, and a third operation; In the first operation, the control unit applies a first voltage to the first conductive member and does not apply the first voltage to the second conductive member, and detects a first value corresponding to a first difference between a first electrical resistance of the first resistive member and a second electrical resistance of the second resistive member; In the second operation, the control unit applies a second voltage to the first conductive member and detects a second value corresponding to a second difference between the first electrical resistance and a third electrical resistance of the third resistive member; In the third operation, the control unit applies a third voltage to the second conductive member and detects a third value corresponding to a third difference between the second electrical resistance and the third electrical resistance.

2. The sensor according to claim 1 , wherein the control unit is configured to output a fourth value obtained by a calculation using the first value, the second value, and the third value.

3. The sensor according to claim 2 , wherein the fourth value includes values ​​corresponding to the concentrations of a plurality of types of detection target substances contained in the detection target.

4. The sensor according to claim 2 , wherein the calculation includes correction for influences due to other factors of the object to be detected.

5. The sensor of claim 1 , wherein the first voltage is different from the second voltage.

6. The sensor of claim 1 , wherein the electrical resistance of the second conductive member is different from the electrical resistance of the first conductive member.

7. a second temperature of the first resistance member when a first power is supplied to the first conductive member is higher than a first temperature; the second change rate difference is smaller than the first change rate difference; the first change rate difference is an absolute value of a difference between a first change rate of the first electrical resistance with respect to temperature at the first temperature and a second change rate of the second electrical resistance with respect to temperature at the first temperature, The sensor according to any one of claims 1 to 5, wherein the second change rate difference is an absolute value of the difference between a second temperature state change rate of the first electrical resistance with respect to the temperature at the second temperature and the second change rate.

8. a third temperature of the first resistance member when a second power is supplied to the first conductive member is higher than the first temperature; the fourth change rate difference is smaller than the third change rate difference; the third change rate difference is an absolute value of a difference between the first change rate and a third change rate of the third electrical resistance with respect to temperature at the first temperature, 8. The sensor according to claim 7, wherein the fourth change rate difference is an absolute value of a difference between a third temperature state change rate of the first electrical resistance with respect to temperature at the third temperature and the third change rate.

9. a first electrical resistance value of the first resistance member at the first temperature is different from a second electrical resistance value of the second resistance member at the first temperature; the first electrical resistance value is different from the third electrical resistance value of the third resistance element at the first temperature; The sensor of claim 8 , wherein the second electrical resistance value is different from the third electrical resistance value.

10. The first element is a first substrate region; a first fixing portion fixed to a portion of the first base region; a first support portion supported by the first fixed portion and supporting the first detection portion; Including, a first gap is provided between another part of the first substrate region and the first detection unit; The second element is a second substrate region; a second fixing portion fixed to a part of the second base region; a second support portion supported by the second fixed portion and supporting the second detection portion; Including, a second gap is provided between another part of the second substrate region and the second detection unit; The third element is a third substrate region; and a third fixing portion fixed to a part of the third base region; a third support portion supported by the third fixed portion and supporting the third detection portion; Including, The sensor according to claim 1 , wherein a third gap is provided between another part of the third base region and the third detection portion.

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