Semiconductor device

Abstract

To provide a semiconductor device capable of suppressing the peeling of a resin portion from a terminal.SOLUTION: A semiconductor device of the embodiment includes a semiconductor element. It has a terminal connected to the semiconductor element, with at least part of its surface being a first surface containing copper. It has a resin portion covering part of the terminal and the semiconductor element. A functional film containing an oxygen atom-containing organic film is formed on at least a portion of an area covered with the resin portion of the first surface. The organic film is bonded to the resin portion.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] A semiconductor device has been proposed in which terminals such as lead frames and wires are sealed with a sealing resin to prevent the terminals from coming into contact with the outside air. However, when the terminals are made of a metal material such as copper, it is difficult to improve adhesion between the terminals and the sealing resin, and there is a risk that the sealing resin will peel off from the terminals. If the sealing resin peels off from the terminals and the terminals come into contact with the outside air, the terminals will deteriorate due to corrosion or the like, and there is a risk that the reliability of the semiconductor device will decrease. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-149370 Summary of the Invention [Problem to be solved by the invention]

[0004] The problem to be solved by the present invention is to provide a semiconductor device that can prevent a resin portion from peeling off from a terminal. [Means for solving the problem]

[0005] The semiconductor device of the embodiment has a semiconductor element. It has a terminal connected to the semiconductor element, at least a portion of which is a first surface containing copper. It has a resin portion covering a portion of the terminal and the semiconductor element. A functional film having an organic film containing oxygen atoms is formed on at least a portion of the portion of the first surface covered by the resin portion. The organic film is bonded to the resin portion. [Brief explanation of the drawings]

[0006] [Figure 1]1 is a cross-sectional view showing a semiconductor device according to an embodiment; [Figure 2] FIG. 2 is a partially enlarged cross-sectional view showing a part of the semiconductor device according to the embodiment. [Figure 3] 3 is a flowchart showing a manufacturing process of the semiconductor device according to the embodiment. [Figure 4] 3A to 3C are enlarged cross-sectional views each showing a first part of a manufacturing process of the semiconductor device according to the embodiment. [Figure 5] 5A to 5C are second partially enlarged cross-sectional views showing the manufacturing process of the semiconductor device according to the embodiment. [Figure 6] 10A and 10B are enlarged cross-sectional views illustrating a third part of the manufacturing process of the semiconductor device according to the embodiment. [Figure 7] FIG. 10 is a cross-sectional view showing a semiconductor device according to a first modified example of the embodiment. [Figure 8] FIG. 10 is a cross-sectional view showing a semiconductor device according to a second modified example of the embodiment. [Figure 9] FIG. 10 is a cross-sectional view showing a semiconductor device according to a third modified example of the embodiment. [Figure 10] FIG. 10 is a partially enlarged cross-sectional view showing a part of a semiconductor device according to a fourth modified example of the embodiment. [Figure 11] FIG. 10 is a cross-sectional view showing a semiconductor device according to a fifth modified example of the embodiment. [Figure 12] FIG. 10 is a cross-sectional view showing a semiconductor device according to a sixth modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, a semiconductor device according to an embodiment will be described with reference to the drawings.

[0008] The Z-axis direction shown in each drawing is the up-down direction of the semiconductor device. The side toward which the Z-axis arrow points (+Z side) is the upper side of the semiconductor device. The side opposite to the side toward which the Z-axis arrow points (-Z side) is the lower side of the semiconductor device. In the following explanation, the upper side of the semiconductor device will be simply referred to as the "upper side," the lower side of the semiconductor device will be simply referred to as the "lower side," and the up-down direction of the semiconductor device will be simply referred to as the "upper direction." Note that the terms "upper side," "lower side," and "up-down direction" do not indicate a relationship with the direction of gravity. In the following explanation, the outer surface of each component and layer constituting the semiconductor device that faces upward will be referred to as the upper surface, and the outer surface that faces downward will be referred to as the lower surface.

[0009] The first direction D1 shown in each drawing is a direction perpendicular to the up-down direction. In the following description, the side toward which the arrow of the first direction D1 points (+D1 side) will be referred to as one side of the first direction D1, and the side opposite to the side toward which the arrow of the first direction D1 points (-D1 side) will be referred to as the other side of the first direction D1.

[0010] (Embodiment) FIG. 1 is a cross-sectional view showing a semiconductor device 10 of this embodiment. FIG. 2 is a partially enlarged cross-sectional view showing a part of the semiconductor device 10 of this embodiment. FIG. 2 shows part A of the semiconductor device 10, which is surrounded by a dashed line in FIG. 1. The semiconductor device 10 of this embodiment is, for example, a semiconductor device such as a MOSFET (metal-oxide-semiconductor field-effect transistor) or an IGBT (insulated gate bipolar transistor). As shown in FIG. 1, the semiconductor device 10 of this embodiment includes a semiconductor element 31, a terminal 20, and a resin part 60.

[0011] The semiconductor element 31 is made of a semiconductor material. In this embodiment, examples of the semiconductor material that can be used for the semiconductor element 31 include, but are not limited to, silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), and gallium nitride (GaN).

[0012] The terminal 20 electrically connects the semiconductor element 31 to a power supply and a driven body (not shown) that are arranged outside the semiconductor device 10. As a result, power is supplied to the semiconductor element 31 from the power supply via the terminal 20. The semiconductor element 31 can also output power to the driven body via the terminal 20. In this embodiment, both ends of the terminal 20 in the first direction D1 protrude from the resin part 60. In this embodiment, the terminal 20 includes a lead frame 21 and a wire 25.

[0013] The lead frame 21 has a plate shape extending in a direction perpendicular to the up-down direction. Both ends of the lead frame 21 in the first direction D1 protrude from the resin portion 60. The lead frame 21 is made of any of copper, a copper-containing alloy, and a metal material other than copper whose surface is copper-plated. That is, at least a portion of the terminal 20 is made of any of copper, a copper-containing alloy, and a metal material other than copper whose surface is copper-plated. In this embodiment, the lead frame 21 is made of copper. Therefore, the surface of the lead frame 21 contains copper. In this embodiment, the portion of the surface of the terminal 20 that contains copper is referred to as the first surface S1. In this embodiment, the portion of the surface of the terminal 20 that does not contain copper is referred to as the second surface S2. At least a portion of the surface of the lead frame 21 is the first surface S1. In this embodiment, the entire surface of the lead frame 21 is the first surface S1. A portion of the surface of the lead frame 21 may be the second surface S2. The lead frame 21 has a first lead frame 22 and a second lead frame 23.

[0014] The first lead frame 22 and the second lead frame 23 are arranged at an interval in the first direction D1. The first lead frame 22 is arranged on one side in the first direction D1 (the +D1 side) of the second lead frame 23. Each of the first lead frame 22 and the second lead frame 23 is in the shape of a plate extending in a direction perpendicular to the up-down direction.

[0015] A semiconductor element 31 is fixed to the upper surface of the first lead frame 22 via a bonding material 32. Examples of the bonding material 32 that can be used include, but are not limited to, a known insulating die attach film mainly composed of epoxy resin, silver paste, solder, or a metal sintered material such as copper or silver. The first lead frame 22 has a first surface portion S11 and a second surface portion S12.

[0016] The first surface portion S11 is a portion of the upper surface of the first lead frame 22 on one side in the first direction D1 (+D1 side) of the bonding material 32. An end portion of the first surface portion S11 on one side in the first direction D1 is located on the other side in the first direction D1 (-D1 side) of the end portion of the first lead frame 22 on one side in the first direction D1. The first surface portion S11 is the first surface S1. The first surface portion S11 is covered with the resin portion 60.

[0017] The second surface portion S12 includes a portion of the upper surface of the first lead frame 22 that is on the other side (-D1 side) in the first direction D1 relative to the bonding material 32 and a surface of the first lead frame 22 that faces the other side in the first direction D1. The second surface portion S12 is the first surface S1. The second surface portion S12 is covered with the resin portion 60.

[0018] The second lead frame 23 has a third surface portion S13. The third surface portion S13 includes a portion of the upper surface of the second lead frame 23 on one side in the first direction D1 (the +D1 side) and a surface of the second lead frame 23 facing one side in the first direction D1. The third surface portion S13 is the first surface S1. The third surface portion S13 is covered with a resin portion 60.

[0019] A plating layer 50 is formed on the surface of the first lead frame 22 and the surface of the second lead frame 23, on portions of the surface that are located outside the resin portion 60. That is, the plating layer 50 is formed on the portion of the surface of the lead frame 21 that is located outside the resin portion 60. The plating layer 50 prevents the portion of the surface of the lead frame 21 that is located outside the resin portion 60 from coming into contact with the outside air. This prevents the portion of the surface of the lead frame 21 that is located outside the resin portion 60 from deteriorating due to corrosion or the like. This improves the reliability of the semiconductor device 10. The material that constitutes the plating layer 50 can be a metal material such as tin or nickel, but is not limited to these.

[0020] The wire 25 connects the lead frame 21 and the semiconductor element 31. More specifically, the wire 25 connects an electrode (not shown) provided on the lead frame 21 to an electrode (not shown) provided on the semiconductor element 31. If the lead frame 21 does not have an electrode, the wire 25 may be connected to the lead frame 21. In this embodiment, the wire 25 is made of copper, a copper-containing alloy, or a metal material other than copper whose surface is copper-plated. That is, at least a portion of the terminal 20 is made of copper, a copper-containing alloy, or a metal material other than copper whose surface is copper-plated. In this embodiment, the wire 25 is made of copper. In this embodiment, the surface of the wire 25 is a first surface S1. The wire 25 includes a first wire 25a and a second wire 25b.

[0021] The first wire 25a connects the first lead frame 22 and the semiconductor element 31. More specifically, one end of the first wire 25a is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the first wire 25a is connected to an electrode (not shown) provided on the first surface portion S11 of the first lead frame 22. A fourth surface portion S14, which is the surface of the first wire 25a, contains copper. The fourth surface portion S14 is the first surface S1. The fourth surface portion S14 is covered with a resin portion 60.

[0022] The second wire 25b connects the second lead frame 23 and the semiconductor element 31. More specifically, one end of the second wire 25b is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the second wire 25b is connected to an electrode (not shown) provided on the third surface portion S13 of the second lead frame 23. The fifth surface portion S15, which is the surface of the second wire 25b, contains copper. The fifth surface portion S15 is the first surface S1. The fifth surface portion S15 is covered with the resin portion 60. As described above, the fourth surface portion S14 of the first wire 25a is the first surface S1. Therefore, at least a portion of the surface of the wire 25 is the first surface S1. In this embodiment, the entire surface of the wire 25 is the first surface S1. A portion of the surface of the wire 25 may be the second surface S2. Also, as described above, at least a portion of the surface of the lead frame 21 is the first surface S1. Therefore, at least a portion of the surface of the terminal 20 is the first surface S1.

[0023] In this embodiment, a functional film 40 is formed on at least a portion of the first surface S1 of the terminal 20 that is covered by the resin portion 60. More specifically, in this embodiment, a functional film 40 is formed on each of the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S14, and the fifth surface portion S15 of the terminal 20. The outer surface of the functional film 40 is in contact with the resin portion 60. In this embodiment, the functional film 40 includes a first functional film portion 41, a second functional film portion 42, a third functional film portion 43, a fourth functional film portion 44, and a fifth functional film portion 45.

[0024] The first functional film portion 41 is formed on the first surface portion S11 of the terminal 20. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 43 is formed on the third surface portion S13. The fourth functional film portion 44 is formed on the fourth surface portion S14. The fifth functional film portion 45 is formed on the fifth surface portion S15. As shown in FIG. 2, the functional film 40 has a copper oxide film 46 and an organic film 47. Note that in the following description, only the configurations of the third functional film portion 43 and the fifth functional film portion 45 of the functional film 40 may be described, but the configurations of the first functional film portion 41, the second functional film portion 42, and the fourth functional film portion 44, other than their shapes, are the same as the configuration of the third functional film portion 43, other than their shape.

[0025] The copper oxide film 46 of the third functional film portion 43 is formed on the third surface portion S13. The copper oxide film 46 of the fifth functional film portion 45 is formed on the fifth surface portion S15. The copper oxide film 46 is formed on a portion of the first surface S1 that is covered with the resin portion 60. The copper oxide film 46 is formed between the first surface S1 and the organic film 47. The copper oxide film 46 is made of copper oxide. The copper oxide film 46 is in close contact with the first surface S1. In this embodiment, since the copper oxide film 46 and the first surface S1 each contain copper, the adhesion between the copper oxide film 46 and the first surface S1 can be increased.

[0026] In this embodiment, the copper oxide film 46 is formed by oxidizing the surfaces of the terminals 20, i.e., the lead frame 21 and the wires 25. That is, the copper oxide film 46 is formed by oxidizing the first surface S1 of the terminals 20. The method for forming the copper oxide film 46 is not particularly limited, and the terminals 20 may be heated or left in a room temperature atmosphere. In this embodiment, the thickness T1 of the copper oxide film 46 is 1 nm or more and 15 nm or less. Note that the functional film 40 does not necessarily have to include the copper oxide film 46. In this case, the functional film 40 includes only the organic film 47, and the organic film 47 is formed on the first surface S1.

[0027] The organic film 47 is formed on the copper oxide film 46. The organic film 47 is an organic film containing oxygen atoms. The organic film 47 is in close contact with the copper oxide film 46. In this embodiment, the organic film 47 and the copper oxide film 46 each contain oxygen atoms, and therefore the organic film 47 and the copper oxide film 46 are bonded by covalent bonds via the oxygen atoms. Therefore, in this embodiment, the adhesion between the organic film 47 and the copper oxide film 46 can be increased. In this embodiment, the organic film 47 is formed by immersing the terminal 20 on which the copper oxide film 46 is formed, i.e., the lead frame 21 and the wire 25 on which the copper oxide film 46 is formed, in an aqueous solution containing an azole-based organic substance. Because the azole-based organic substance selectively reacts with copper, the organic film 47 is formed only on the copper oxide film 46 and not on the surface of a material that does not contain copper. Other methods may be used to form the organic film 47 on the copper oxide film 46. In this embodiment, the thickness T2 of the organic film 47 is 10 nm or more and 200 nm or less. The thickness T2 of the organic film 47 is preferably 10 nm or more and 60 nm or less.

[0028] As shown in FIG. 1 , the resin portion 60 covers a portion of the terminal 20 and the semiconductor element 31. The resin portion 60 seals the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S14, the fifth surface portion S15, and the surface of the semiconductor element 31 from the outside air. The resin portion 60 seals the portion of the surface of the terminal 20 where the plating layer 50 is not formed from the outside air. This prevents the portion of the surface of the terminal 20 where the plating layer 50 is not formed from deteriorating due to corrosion or the like. The resin portion 60 may be made of, for example, a known epoxy resin, an ultraviolet-curable resin, or a thermosetting resin, but is not limited to these. In this embodiment, the resin portion 60 is made of epoxy resin. As shown in FIG. 2 , a portion of the resin portion 60 is in close contact with the functional film 40 formed on the first surface S1 of the terminal 20. More specifically, a portion of the resin portion 60 is in close contact with the organic film 47. In this embodiment, the resin part 60 is bonded to the organic film 47 by a covalent bond via a carbon atom. This increases the adhesion between the resin part 60 and the organic film 47. In other words, it increases the adhesion between the resin part 60 and the functional film 40.

[0029] The lower end of the third functional film portion 43 is located higher than the lower end of the resin portion 60. Furthermore, the end of the third functional film portion 43 on the other side (-D1 side) in the first direction D1 is located closer to one side (+D1 side) in the first direction D1 than the end of the resin portion 60 on the other side in the first direction D1. This provides a gap between the third functional film portion 43 and the plating layer 50. Similarly, as shown in FIG. 1, a gap is provided between each of the first functional film portion 41 and the second functional film portion 42 and the plating layer 50. That is, a gap is provided between the functional film 40 and the plating layer 50. The end of the functional film 40 is located more inward than the end of the resin portion 60. As shown in FIG. 2, the distance Da between the functional film 40 and the plating layer 50 is preferably 50 μm or more. As will be described in detail later, this allows the plating layer 50 to be formed over the entire surface of the lead frame 21 that is not covered by the resin portion 60. In this embodiment, the distance Da between the functional film 40 and the plating layer 50 is 100 μm or more. It is preferable that the distance Da between the functional film 40 and the plating layer 50 is 200 μm or less. This prevents the area where the terminals 20 and the resin portion 60 are in direct contact from becoming too wide, thereby preferably preventing the resin portion 60 from peeling off from the terminals 20.

[0030] 3 is a flowchart showing the manufacturing process of the semiconductor device 10. The manufacturing process of the semiconductor device 10 of this embodiment includes a copper oxide film forming process P01, an organic film forming process P02, a resin part forming process P03, and a plating process P04. Although not described here, the manufacturing process of the semiconductor device 10 also includes other processes, such as a process of fixing the semiconductor element 31 to the lead frame 21.

[0031] 4, the copper oxide film formation step P01 is a step of forming a copper oxide film 46 on the first surface S1 of the terminal 20. In this embodiment, the copper oxide film 46 is formed over the entire first surface S1 of the terminal 20, which has a wire 25 previously connected to an electrode (not shown) of the lead frame 21. As described above, in this embodiment, the copper oxide film 46 is formed by oxidizing the first surface S1 of the terminal 20. As described above, the method of forming the copper oxide film 46 is not particularly limited, and the terminal 20 may be heated or the terminal 20 may be left in a room temperature atmosphere.

[0032] The organic film forming process P02 is a process of forming an organic film 47 on the copper oxide film 46. As described above, in this embodiment, the terminal 20 on which the copper oxide film 46 has been formed is immersed in an aqueous solution containing an azole-based organic substance to form the organic film 47 on the copper oxide film 46. As a result, the functional film 40 is formed over the entire first surface S1 of the terminal 20. At this time, as described above, the copper oxide film 46 and the organic film 47 are bonded by covalent bonds via oxygen atoms. Furthermore, as described above, the azole-based organic substance selectively reacts with copper, so the organic film 47 is formed only on the copper oxide film 46 and not on the surface of a material that does not contain copper. The organic film 47 may be formed on the copper oxide film 46 by other methods.

[0033] As shown in FIG. 5, the resin portion forming step P03 is a step of forming the resin portion 60. In this embodiment, as shown in FIG. 1, a part of the lead frame 21 and the semiconductor element 31 are covered with the resin portion 60 by a molding method such as transfer molding, and then the resin portion 60 is hardened by, for example, heating to form the resin portion 60. As described above, the resin portion 60 is bonded to the organic film 47 of the functional film 40 by a covalent bond via carbon. As shown in FIG. 5, a resin burr 60a is formed in the resin portion 60. The resin burr 60a protrudes from the resin portion 60.

[0034] The plating step P04 is a step of forming a plating layer 50 made of tin on the portion of the surface of the lead frame 21 that is not covered by the resin portion 60. In the plating step P04, first, the lead frame 21 is immersed in an acidic chemical solution to remove the functional film 40 formed on the portion of the surface of the lead frame 21 that is not covered by the resin portion 60, as shown in FIG. 6 . At this time, the resin burrs 60a are removed along with the functional film 40. The chemical solution also penetrates from the end of the resin portion 60 into the interior of the resin portion 60. In this embodiment, the chemical solution penetrates 100 μm or more from the end of the resin portion 60 into the interior of the resin portion 60. As a result, the functional film 40 formed near the end of the resin portion 60 is removed, and the end of the functional film 40 is located 100 μm or more inside the resin portion 60 from the end of the resin portion 60. Note that the chemical solution is not limited to the above-mentioned chemical solution and may be an alkaline chemical solution. Thereafter, the lead frame 21 is plated, and as shown in Figures 1 and 2, a plating layer 50 is formed on the surface of the lead frame 21 in the portion not covered by the resin portion 60. When the plating step P04 is completed, the manufacturing process of the semiconductor device 10 is completed.

[0035] According to this embodiment, the semiconductor device 10 includes a semiconductor element 31, a terminal 20 connected to the semiconductor element 31 and having a first surface S1, at least a portion of which contains copper, and a resin portion 60 covering a portion of the terminal 20 and the semiconductor element 31. A functional film 40 having an organic film 47 containing oxygen atoms is formed on at least a portion of the first surface S1 covered by the resin portion 60, and the organic film 47 is bonded to the resin portion 60. As described above, the organic film 47 and the resin portion 60 are bonded by covalent bonds via carbon atoms, thereby enhancing adhesion between the functional film 40 and the resin portion 60. Therefore, the adhesion between the terminal 20 and the resin portion 60 via the functional film 40 can be enhanced. This prevents the resin portion 60 from peeling off the terminal 20, thereby preventing the terminal 20 from coming into contact with the outside air. This prevents the terminal 20 from deteriorating due to corrosion or the like, thereby enhancing the reliability of the semiconductor device 10.

[0036] According to this embodiment, the functional film 40 has a copper oxide film 46 made of copper oxide between the first surface S1 and the organic film 47, and the copper oxide film 46 is in close contact with the first surface S1. Because both the copper oxide film 46 and the first surface S1 of the terminal 20 contain copper, the adhesion between the copper oxide film 46 and the first surface S1 is greater than the adhesion between the organic film 47 and the first surface S1. Furthermore, as described above, because both the copper oxide film 46 and the organic film 47 contain oxygen atoms, the copper oxide film 46 and the organic film 47 are bonded by covalent bonds via the oxygen atoms. This increases the adhesion between the copper oxide film 46 and the organic film 47. As a result, the adhesion between the terminal 20 and the resin portion 60 via the functional film 40 can be more effectively increased compared to when the functional film 40 does not have the copper oxide film 46. This more effectively prevents the resin portion 60 from peeling off the terminal 20, thereby more effectively preventing the terminal 20 from deteriorating due to corrosion or the like. Therefore, the reliability of the semiconductor device 10 can be improved more suitably.

[0037] According to this embodiment, the thickness T1 of the copper oxide film 46 is not less than 1 nm and not more than 15 nm. If the thickness T1 of the copper oxide film 46 is less than 1 nm, the thickness T1 of the copper oxide film 46 becomes too thin, and therefore, due to the surface roughness of the terminal 20, variations in the thickness T1 of the copper oxide film 46, and the like, a portion of the first surface S1 of the terminal 20 may be exposed from the copper oxide film 46. In this case, a portion of the first surface S1 comes into direct contact with the organic film 47, thereby reducing the adhesion between the terminal 20 and the functional film 40. This makes it easier for the functional film 40 to peel off from the terminal 20, which may reduce the adhesion between the terminal 20 and the resin part 60 via the functional film 40. If the thickness T1 of the copper oxide film 46 is greater than 15 nm, the thickness T1 of the copper oxide film 46 becomes too thick, and the copper oxide film 46 becomes more likely to peel off from the terminal 20. Therefore, there is a risk that the adhesion between the terminal 20 and the resin part 60 via the functional film 40 will decrease. In contrast, in this embodiment, as described above, the thickness T1 of the copper oxide film 46 is 1 nm or more and 15 nm or less. Therefore, the thickness T1 of the copper oxide film 46 can be prevented from becoming too thin, and therefore, exposure of a portion of the first surface S1 from the copper oxide film 46 can be prevented. This prevents a decrease in the adhesion between the terminal 20 and the functional film 40. Furthermore, the thickness T1 of the copper oxide film 46 can be prevented from becoming too thick, and therefore, peeling of the copper oxide film 46 from the terminal 20 can be prevented. As a result, a decrease in the adhesion between the terminal 20 and the resin portion 60 via the functional film 40 can be prevented, and therefore, peeling of the resin portion 60 from the terminal 20 can be more suitably prevented. Therefore, the reliability of the semiconductor device 10 can be more suitably improved.

[0038] According to this embodiment, the thickness T2 of the organic film 47 is not less than 10 nm and not more than 200 nm. If the thickness T2 of the organic film 47 is less than 10 nm, the thickness T2 of the organic film 47 becomes too thin, which tends to result in large variations in the thickness T2 of the organic film 47. This may result in a portion of the copper oxide film 46 being exposed from the organic film 47. In this case, a portion of the copper oxide film 46 comes into direct contact with the resin portion 60, reducing the contact area between the organic film 47 and the resin portion 60. This reduces the adhesion between the functional film 40 and the resin portion 60. This makes it easier for the resin portion 60 to peel off from the functional film 40, which may reduce the adhesion between the terminal 20 and the resin portion 60 via the functional film 40. If the thickness T2 of the organic film 47 is greater than 200 nm, the thickness T2 of the organic film 47 becomes too thick, which may increase the number of steps required to form the organic film 47 in the organic film forming step P02. In contrast, in this embodiment, as described above, the thickness T2 of the organic film 47 is 10 nm or more and 200 nm or less. This prevents the thickness T2 of the organic film 47 from becoming too thin, thereby reducing variation in the thickness T2 of the organic film 47. This prevents a portion of the copper oxide film 46 from being exposed through the organic film 47, thereby preventing a decrease in the contact area between the organic film 47 and the resin portion 60. This prevents a decrease in the adhesion between the functional film 40 and the resin portion 60, thereby more suitably increasing the adhesion between the terminal 20 and the resin portion 60 via the functional film 40. Furthermore, this prevents the thickness T2 of the organic film 47 from becoming too thick, thereby preventing an increase in the number of steps required to form the organic film 47 in the organic film forming step P02.

[0039] According to this embodiment, the thickness T2 of the organic film 47 is 10 nm or more and 60 nm or less. This more effectively prevents the thickness T2 of the organic film 47 from becoming too thin, thereby more effectively suppressing variations in the thickness T2 of the organic film 47. This more effectively prevents a portion of the copper oxide film 46 from being exposed through the organic film 47, thereby more effectively suppressing a decrease in the contact area between the organic film 47 and the resin portion 60. This more effectively increases the adhesion between the terminal 20 and the resin portion 60 via the functional film 40. Furthermore, this more effectively prevents the thickness T2 of the organic film 47 from becoming too thick, thereby more effectively suppressing an increase in the number of steps required to form the organic film 47 in the organic film forming step P02.

[0040] According to this embodiment, at least a portion of terminal 20 is made of copper, a copper-containing alloy, or a metal material other than copper whose surface is copper-plated. Therefore, in copper oxide film formation step P01, copper oxide film 46 can be formed on first surface S1 by the simple process of oxidizing first surface S1 of terminal 20. This makes it easier to form copper oxide film 46 than when copper oxide film 46 is formed on first surface S1 of terminal 20 by other methods, such as physical vapor deposition and chemical vapor deposition. Therefore, an increase in the number of steps required to form copper oxide film 46 in copper oxide film formation step P01 can be suppressed.

[0041] According to this embodiment, the terminal 20 includes a lead frame 21 and a wire 25 connecting the lead frame 21 and the semiconductor element 31, and at least a portion of each of the surfaces of the lead frame 21 and the wire 25 is the first surface S1. Therefore, a functional film 40 can be formed on each of the first surface S1 of the lead frame 21 and the first surface S1 of the wire 25. This increases the adhesion between the lead frame 21 and the wire 25 and the resin portion 60 via the functional film 40. This prevents the resin portion 60 from peeling off the lead frame 21 and the wire 25, thereby preventing the lead frame 21 and the wire 25 from coming into contact with the outside air. This prevents the lead frame 21 and the wire 25 from deteriorating due to corrosion or the like, thereby improving the reliability of the semiconductor device 10.

[0042] According to this embodiment, a plating layer 50 is formed on a portion of the surface of the lead frame 21 that is located outside the resin portion 60, and the distance Da between the functional film 40 and the plating layer 50 is 100 μm or more. Therefore, in the plating step P04, the functional film 40 formed on the portion of the surface of the lead frame 21 that is not covered by the resin portion 60 can be removed, and the plating layer 50 can be formed over the entire portion of the surface of the lead frame 21 that is not covered by the resin portion 60. This more effectively prevents the lead frame 21 from coming into contact with the outside air. Therefore, deterioration of the lead frame 21 due to corrosion or the like can be more effectively prevented, and the reliability of the semiconductor device 10 can be more effectively improved.

[0043] (First Modification) 7 is a cross-sectional view showing a semiconductor device 110 according to a first modification of the embodiment. In the semiconductor device 110 according to this modification, the shape of the lead frame 121 is different from the shape of the lead frame 21 according to the above-described embodiment. In the following description, the same components as those in the above-described embodiment are denoted by the same reference numerals, and their description will be omitted. The semiconductor device 110 according to this modification includes a semiconductor element 31, a terminal 120, and a resin portion 160.

[0044] The terminal 120 electrically connects the semiconductor element 31 to a power source and a driven body (not shown) that are arranged outside the semiconductor device 110. In this modification, both ends of the terminal 120 in the first direction D1 protrude from the resin part 160. In this modification, the terminal 120 includes a lead frame 121 and a wire 25.

[0045] Both ends of the lead frame 121 in the first direction D1 protrude from the resin part 160. In this modification, the lead frame 121 is made of copper. At least a portion of the surface of the lead frame 121 is the first surface S1. In this modification, the entire surface of the lead frame 121 is the first surface S1. The lead frame 121 has a first lead frame 122 and a second lead frame 123. The first lead frame 122 and the second lead frame 123 are arranged with an interval in the first direction D1. The first lead frame 122 is arranged on one side (+D1 side) of the second lead frame 123 in the first direction D1.

[0046] The first lead frame 122 has a first portion 122a, a second portion 122b, and a third portion 122c. The first portion 122a is plate-shaped and extends in a direction perpendicular to the up-down direction. A semiconductor element 31 is fixed to the upper surface of the first portion 122a via a bonding material 32. A part of the first portion 122a is located inside the resin portion 160. An end portion of the first portion 122a on one side in the first direction D1 (the +D1 side) protrudes outside the resin portion 160. The second portion 122b is plate-shaped and extends downward toward one side in the first direction D1. An end portion of the second portion 122b on the other side in the first direction D1 (the -D1 side) is connected to the end portion of the first portion 122a on one side in the first direction D1. The third portion 122c is plate-shaped and extends in a direction perpendicular to the up-down direction. An end portion of the third portion 122c on the other side in the first direction D1 is connected to an end portion of the second portion 122b on one side in the first direction D1. The second portion 122b and the third portion 122c are located outside the resin portion 160. The first lead frame 122 has a first surface portion S111 and a second surface portion S112.

[0047] The first surface portion S111 is a portion of the upper surface of the first portion 122a that is closer to one side in the first direction D1 (+D1 side) than the bonding material 32. An end portion of the first surface portion S111 on one side in the first direction D1 is located closer to the other side in the first direction D1 (-D1 side) than the end portion of the first portion 122a on one side in the first direction D1. The first surface portion S111 is the first surface S1. The first surface portion S111 is covered with the resin portion 160.

[0048] The second surface portion S112 includes a portion of the upper surface of the first portion 122a that is closer to the other side (-D1 side) in the first direction D1 than the bonding material 32, a surface of the first portion 122a facing the other side in the first direction D1, and a lower surface of the first portion 122a. The second surface portion S112 is the first surface S1. The second surface portion S112 is covered with the resin portion 160.

[0049] The second lead frame 123 has a fourth portion 123a, a fifth portion 123b, and a sixth portion 123c. The fourth portion 123a is plate-shaped and extends in a direction perpendicular to the up-down direction. A part of the fourth portion 123a is located inside the resin portion 160. An end portion of the fourth portion 123a on the other side (-D1 side) in the first direction D1 of the fourth portion 123a protrudes outside the resin portion 160. The fifth portion 123b is plate-shaped and extends downward toward the other side in the first direction D1. An end portion of the fifth portion 123b on one side (+D1 side) in the first direction D1 of the fifth portion 123b is connected to an end portion of the fourth portion 123a on the other side in the first direction D1. The sixth portion 123c is plate-shaped and extends in a direction perpendicular to the up-down direction. An end portion of the sixth portion 123c on one side in the first direction D1 of the sixth portion 123c is connected to an end portion of the fifth portion 123b on the other side in the first direction D1 of the fifth portion 123b. The fifth portion 123b and the sixth portion 123c are located outside the resin portion 160. The second lead frame 123 has a third surface portion S113.

[0050] The third surface portion S113 includes a portion of the upper surface of the fourth portion 123a on one side in the first direction D1 (+D1 side), a surface of the fourth portion 123a facing one side in the first direction D1, and a lower surface of the fourth portion 123a. The third surface portion S113 is the first surface S1. The third surface portion S113 is covered with a resin portion 160. A plating layer 150 is formed on a portion of the surface of the lead frame 121 that is located outside the resin portion 160. Other configurations of the terminal 120 of this modified example are similar to other configurations of the terminal 20 of the above-described embodiment.

[0051] In this modification, a functional film 140 is formed on at least a portion of the first surface S1 of the terminal 120 that is covered by the resin portion 160. In this modification, a functional film 140 is formed on each of the first surface portion S111, the second surface portion S112, the third surface portion S113, the fourth surface portion S14, and the fifth surface portion S15. The outer surface of the functional film 140 contacts the resin portion 160. In this modification, the functional film 140 includes a first functional film portion 141, a second functional film portion 142, a third functional film portion 143, a fourth functional film portion 44, and a fifth functional film portion 45.

[0052] The first functional film portion 141 is formed on the first surface portion S111. The second functional film portion 142 is formed on the second surface portion S112. The third functional film portion 143 is formed on the third surface portion S113. The fourth functional film portion 44 is formed on the fourth surface portion S14. The fifth functional film portion 45 is formed on the fifth surface portion S15. Like the functional film 40 of the above-described embodiment, the functional film 140 has a copper oxide film 46 and an organic film 47. The copper oxide film 46 is formed on a portion of the first surface S1 that is covered by the resin portion 160. The copper oxide film 46 is in close contact with the first surface S1. The organic film 47 is formed on the copper oxide film 46. The organic film 47 is an organic film containing oxygen atoms. The organic film 47 is in close contact with the copper oxide film 46. Other configurations of the functional film 140 of this modified example are similar to those of the functional film 40 of the above-described embodiment.

[0053] The resin portion 160 covers a portion of the terminal 120 and the semiconductor element 31. The resin portion 160 seals the first surface portion S111, the second surface portion S112, the third surface portion S113, the fourth surface portion S14, the fifth surface portion S15, and the surface of the semiconductor element 31 from the outside air. This prevents the portions of the surface of the terminal 120 where the plating layer 50 is not formed from deteriorating due to corrosion or the like. A portion of the resin portion 160 is in close contact with the functional film 140 formed on the first surface S1 of the terminal 120. More specifically, a portion of the resin portion 160 is in close contact with the organic film 47. In this modification, the resin portion 160 is bonded to the organic film 47 by a covalent bond via a carbon atom. Other configurations of the resin portion 160 of this modification are similar to those of the resin portion 60 of the above-described embodiment.

[0054] According to this modification, a functional film 140 having an organic film 47 containing oxygen atoms is formed on at least a portion of the first surface S1 of the terminal 120 that is covered by the resin portion 160, and the organic film 47 is bonded to the resin portion 160. As a result, similar to the above-described embodiment, the organic film 47 and the resin portion 60 are bonded by a covalent bond via a carbon atom, thereby increasing the adhesion between the functional film 140 and the resin portion 160. Therefore, the adhesion between the terminal 120 and the resin portion 160 can be increased via the functional film 140, and peeling of the resin portion 160 from the terminal 120 can be suppressed. Therefore, deterioration of the terminal 120 due to corrosion or the like can be suppressed, thereby improving the reliability of the semiconductor device 110.

[0055] According to this modification, the functional film 140 has a copper oxide film 46 made of copper oxide between the first surface S1 and the organic film 47, and the copper oxide film 46 is in close contact with the first surface S1. Therefore, similar to the above-described embodiment, the adhesion between the terminal 120 and the resin portion 160 can be more suitably increased via the functional film 140. Therefore, peeling of the resin portion 160 from the terminal 120 can be more suitably prevented.

[0056] (Second Modification) 8 is a cross-sectional view showing a semiconductor device 210 according to a second modification of the embodiment. In the semiconductor device 210 according to this modification, the shape of the lead frame 221 is different from the shape of the lead frame 21 according to the above-described embodiment. In the following description, the same components as those in the above-described embodiment are denoted by the same reference numerals, and their description will be omitted. The semiconductor device 210 according to this modification includes a semiconductor element 31, a terminal 220, and a resin portion 260.

[0057] The terminal 220 electrically connects the semiconductor element 31 to a power source and a driven body (not shown) that are arranged outside the semiconductor device 210. In this modification, the terminal 220 includes a lead frame 221 and a wire 25.

[0058] In the first direction D1, both ends of the lead frame 221 in the first direction D1 are at approximately the same positions as both ends of the resin part 260 in the first direction D1. In this modified example, the lead frame 221 is made of copper. At least a part of the surface of the lead frame 221 is the first surface S1. In this modified example, the entire surface of the lead frame 221 is the first surface S1. The lead frame 221 has a first lead frame 222 and a second lead frame 223. The first lead frame 222 and the second lead frame 223 are arranged with an interval in the first direction D1. The first lead frame 222 is arranged on one side (+D1 side) of the second lead frame 223 in the first direction D1.

[0059] The first lead frame 222 has a plate shape that extends in a direction perpendicular to the up-down direction. A semiconductor element 31 is fixed to the upper surface of the first lead frame 222 via a bonding material 32. The first lead frame 222 has a first surface portion S211 and a second surface portion S12.

[0060] The first surface portion S211 is a portion of the upper surface of the first lead frame 222 that is on one side in the first direction D1 (+D1 side) of the bonding material 32. The first surface portion S211 is the first surface S1. The first surface portion S211 is covered with the resin portion 260.

[0061] The second lead frame 223 has a plate shape that extends in a direction perpendicular to the up-down direction. The second lead frame 223 has a third surface portion S213.

[0062] The third surface portion S213 includes the upper surface of the second lead frame 223 and a surface of the second lead frame 223 facing one side in the first direction D1. The third surface portion S213 is the first surface S1. The third surface portion S213 is covered with the resin portion 260. A plating layer 250 is formed on a portion of the surface of the lead frame 221 that is located outside the resin portion 260. Other configurations of the terminal 220 of this modified example are similar to other configurations of the terminal 20 of the above-described embodiment.

[0063] In this modification, a functional film 240 is formed on at least a portion of the first surface S1 of the terminal 220 that is covered by the resin portion 260. In this modification, the functional film 240 is formed on each of the first surface portion S211, the second surface portion S12, the third surface portion S213, the fourth surface portion S14, and the fifth surface portion S15. The outer surface of the functional film 240 contacts the resin portion 260. In this modification, the functional film 240 includes a first functional film portion 241, a second functional film portion 42, a third functional film portion 243, a fourth functional film portion 44, and a fifth functional film portion 45.

[0064] The first functional film portion 241 is formed on the first surface portion S211. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 243 is formed on the third surface portion S213. The fourth functional film portion 44 is formed on the fourth surface portion S14. The fifth functional film portion 45 is formed on the fifth surface portion S15. Like the functional film 40 of the above-described embodiment, the functional film 240 has a copper oxide film 46 and an organic film 47. The copper oxide film 46 is formed on a portion of the first surface S1 that is covered by the resin portion 260. The copper oxide film 46 is in close contact with the first surface S1. The organic film 47 is formed on the copper oxide film 46. The organic film 47 is an organic film containing oxygen atoms. The organic film 47 is in close contact with the copper oxide film 46. Other configurations of the functional film 240 of this modified example are similar to other configurations of the functional film 40 of the above-described embodiment.

[0065] The resin portion 260 covers a portion of the terminal 220 and the semiconductor element 31. The resin portion 260 seals the first surface portion S211, the second surface portion S12, the third surface portion S213, the fourth surface portion S14, the fifth surface portion S15, and the surface of the semiconductor element 31 from the outside air. A portion of the resin portion 260 is in close contact with the functional film 240 formed on the first surface S1 of the terminal 220. More specifically, a portion of the resin portion 260 is in close contact with the organic film 47. In this modification, the resin portion 260 is bonded to the organic film 47 by a covalent bond via a carbon atom. Other configurations of the resin portion 260 in this modification are similar to those of the resin portion 60 in the above-described embodiment.

[0066] According to this modification, a functional film 240 having an organic film 47 containing oxygen atoms is formed on at least a portion of the portion of the first surface S1 of the terminal 220 that is covered by the resin portion 260, and the organic film 47 is bonded to the resin portion 260. As a result, similar to the above-described embodiment, the organic film 47 and the resin portion 260 are bonded by a covalent bond via a carbon atom, thereby increasing the adhesion between the functional film 240 and the resin portion 260. Therefore, the adhesion between the terminal 220 and the resin portion 260 can be increased via the functional film 240, and peeling of the resin portion 260 from the terminal 220 can be suppressed.

[0067] According to this modification, the functional film 240 has a copper oxide film 46 made of copper oxide between the first surface S1 and the organic film 47, and the copper oxide film 46 is in close contact with the first surface S1. Therefore, similar to the above-described embodiment, the adhesion between the terminal 220 and the resin portion 260 can be more suitably increased via the functional film 240. Therefore, peeling of the resin portion 260 from the terminal 220 can be more suitably prevented.

[0068] (Third Modification) 9 is a cross-sectional view showing a semiconductor device 310 according to a third modification of the embodiment. In the semiconductor device 310 according to this modification, the material of the wire 325 is gold. In the following description, the same components as those in the above-described embodiment are denoted by the same reference numerals, and their description will be omitted. The semiconductor device 310 according to this modification includes a semiconductor element 31, a terminal 320, and a resin part 60.

[0069] The terminal 320 electrically connects the semiconductor element 31 to a power source and a driven body (not shown) that are arranged outside the semiconductor device 310. In this modification, the terminal 320 includes the lead frame 21 and a wire 325.

[0070] The wire 325 connects the lead frame 21 and the semiconductor element 31. More specifically, the wire 325 connects an electrode (not shown) provided on the lead frame 21 to an electrode (not shown) provided on the semiconductor element 31. The wire 325 can be made of a metal such as gold or silver, but is not limited to these. In this modification, the wire 325 is made of gold. Therefore, the surface of the wire 325 is the second surface S2, which does not contain copper. Note that, as in the above embodiment, the surface of the lead frame 21 is the first surface S1. Therefore, at least a portion of the surface of the terminal 320 is the first surface S1. The wire 325 includes a first wire 325a and a second wire 325b.

[0071] The first wire 325a connects the first lead frame 22 and the semiconductor element 31. One end of the first wire 325a is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the first wire 325a is connected to an electrode (not shown) provided on the first surface portion S11 of the first lead frame 22. In this modification, the fourth surface portion S321, which is the surface of the first wire 325a, is the second surface S2 which does not contain copper. The fourth surface portion S321 is covered with a resin portion 60.

[0072] The second wire 325b connects the second lead frame 23 and the semiconductor element 31. More specifically, one end of the second wire 325b is connected to an electrode (not shown) provided on the semiconductor element 31, and the other end of the second wire 325b is connected to an electrode (not shown) provided on the third surface portion S13 of the second lead frame 23. In this modification, the fifth surface portion S322, which is the surface of the second wire 325b, is the second surface S2 which does not contain copper. The fifth surface portion S322 is covered with a resin portion 60. Other configurations of the terminal 320 of this modification are similar to those of the terminal 20 of the above-described embodiment.

[0073] In the manufacturing process of the semiconductor device 310 of this modification, similar to the manufacturing process of the semiconductor device 10 of the above-described embodiment, the terminal 320, which has a wire 325 connected to an electrode (not shown) of the lead frame 21 in advance, is subjected to the copper oxide film forming step P01 and the organic film forming step P02 described above, thereby forming a functional film 340 on the first surface S1 of the lead frame 21. In this case, in the organic film forming step P02, the terminal 320 is immersed in an aqueous solution containing an azole-based organic substance to form an organic film 47. As described above, because the azole-based organic substance selectively reacts with copper, the organic film 47 is formed only on the copper oxide film 46 and not on the fourth surface portion S321 and the fifth surface portion S322 of the wire 325, which do not contain copper. Therefore, in this modification, the functional film 340 is formed on at least a portion of the first surface S1 of the terminal 320 that is covered with the resin portion 60. In this modification, a functional film 340 is formed on each of the first surface portion S11, the second surface portion S12, and the third surface portion S13 of the lead frame 21. On the other hand, in this modification, a functional film 340 is not formed on each of the fourth surface portion S321 and the fifth surface portion S322 of the wire 325. In other words, a functional film 340 is not formed on the second surface S2 of the terminal 320. The outer surface of the functional film 340 is in contact with the resin portion 60. In this modification, the functional film 340 includes a first functional film portion 41, a second functional film portion 42, and a third functional film portion 43.

[0074] The first functional film portion 41 is formed on the first surface portion S11. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 43 is formed on the third surface portion S13. Although not shown, similar to the functional film 40 of the above-described embodiment, the functional film 340 has a copper oxide film 46 and an organic film 47. Other configurations of the functional film 340 of this modified example are similar to other configurations of the functional film 40 of the above-described embodiment.

[0075] The resin portion 60 covers a portion of the terminal 320 and the semiconductor element 31. The resin portion 60 seals the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S321, the fifth surface portion S322, and the surface of the semiconductor element 31 from the outside air. A portion of the resin portion 60 is in close contact with the functional film 340 formed on the first surface S1 of the lead frame 21. More specifically, a portion of the resin portion 60 is in close contact with the organic film 47. In this modification, the resin portion 60 is bonded to the organic film 47 by a covalent bond via a carbon atom.

[0076] According to this modification, the terminal 320 includes a lead frame 21 and a wire 325 connecting the lead frame 21 and the semiconductor element 31. The surface of the lead frame 21 is a first surface S1, and the surface of the wire 325 is a second surface S2 that does not contain copper. The second surface S2 does not have a functional film 340 formed thereon. Therefore, since the functional film 340 can be formed on the surface of the lead frame 21, the adhesion between the lead frame 21 and the resin portion 60 can be increased via the functional film 340. This can prevent the resin portion 60 from peeling off from the lead frame 21. Therefore, the reliability of the semiconductor device 310 can be improved.

[0077] Furthermore, in this modification, by using a precious metal such as gold or silver as the material for the wire 325, even if the resin part 60 peels off from the wire 325, deterioration of the wire 325 due to corrosion or the like can be suppressed, thereby improving the reliability of the semiconductor device 310.

[0078] (Fourth Modification) 10 is a partially enlarged cross-sectional view showing a semiconductor device 410 according to a fourth modification of the embodiment. In the semiconductor device 410 according to this modification, the terminal 420 includes an electrode portion 426. In the following description, the same components as those in the above-described embodiment are denoted by the same reference numerals, and their description will be omitted. The semiconductor device 410 according to this modification includes a semiconductor element 31, a terminal 420, and a resin portion 60.

[0079] The terminal 420 electrically connects the semiconductor element 31 to a power source and a driven body (not shown) that are arranged outside the semiconductor device 410. In this modification, the terminal 420 includes the lead frame 21, the wire 25, and an electrode portion 426.

[0080] The electrode portion 426 is formed on the surface of the lead frame 21. More specifically, the electrode portion 426 is formed on the upper surface of the second lead frame 23. The electrode portion 426 is formed on the third surface portion S13. The material for the electrode portion 426 can be, for example, a metal such as gold or silver, but is not limited to these. In this modification, the electrode portion 426 is made of silver. Therefore, the surface of the electrode portion 426 is the second surface S2, which does not contain copper. The electrode portion 426 is formed by plating the second lead frame 23. The other end of the second wire 25b is connected to a sixth surface portion S423, which is the surface of the electrode portion 426 facing upward. The sixth surface portion S423 is the second surface S2. Note that, as in the above embodiment, the surface of the lead frame 21 is the first surface S1. Therefore, at least a portion of the surface of the terminal 420 is the first surface S1. Other configurations of the terminal 420 of this modified example are similar to other configurations of the terminal 20 of the above-described embodiment.

[0081] Although not shown, in this modification, the electrode portion 426 may be formed on each of the first surface portion S11 (see FIG. 1) of the first lead frame 22 and the upper surface of the semiconductor element 31 (see FIG. 1). In this case, one end of the first wire 25a (see FIG. 1) and one end of the second wire 25b are connected to the electrode portion 426 formed on the upper surface of the semiconductor element 31, and the other end of the first wire 25a is connected to the electrode portion 426 formed on the first surface portion S11.

[0082] In this modification, a functional film 440 is formed on at least a portion of the first surface S1 of the terminal 420 that is covered with the resin part 60. In this modification, the functional film 440 is formed on each of the first surface portion S11 (see FIG. 1), the second surface portion S12 (see FIG. 1), and the third surface portion S13 of the lead frame 21. In this modification, the functional film 440 is not formed on each of the fourth surface portion S14 (see FIG. 1) and the fifth surface portion S15 of the wire 25. Furthermore, in this modification, the functional film 440 is not formed on the sixth surface portion S423 of the electrode part 426. That is, the functional film 440 is not formed on the second surface S2 of the terminal 420. The outer surface of the functional film 440 contacts the resin part 60. In this modification, the functional film 440 includes a first functional film portion 41 (see FIG. 1), a second functional film portion 42 (see FIG. 1), and a third functional film portion 443.

[0083] The first functional film portion 41 is formed on the first surface portion S11 (see FIG. 1). The second functional film portion 42 is formed on the second surface portion S12 (see FIG. 1). The third functional film portion 443 is formed on the third surface portion S13 except for the portion where the electrode portion 426 is formed. The functional film 440 has a copper oxide film 46 and an organic film 47. Other configurations of the functional film 440 of this modified example are similar to other configurations of the functional film 40 of the above-described embodiment.

[0084] The resin portion 60 covers a portion of the terminal 420 and the semiconductor element 31. The resin portion 60 seals the first surface portion S11, the second surface portion S12, the third surface portion S13, the fourth surface portion S14, the fifth surface portion S15, the sixth surface portion S423, and the surface of the semiconductor element 31 from the outside air. A portion of the resin portion 60 is in close contact with the functional film 440 formed on the first surface S1 of the terminal 420. More specifically, a portion of the resin portion 60 is in close contact with the organic film 47. In this modification, the resin portion 60 is bonded to the organic film 47 by a covalent bond via a carbon atom.

[0085] In the manufacturing process of the semiconductor device 410 of this modified example, the lead frame 21 on which the electrode portion 426 is formed is subjected to the copper oxide film forming step P01 and the organic film forming step P02 described above, thereby forming a functional film 440 on the first surface S1 of the lead frame 21. In this case, in the organic film forming step P02, the lead frame 21 on which the electrode portion 426 is formed is immersed in an aqueous solution containing an azole-based organic substance to form an organic film 47. As described above, the azole-based organic substance selectively reacts with copper, so the organic film 47 is formed only on the copper oxide film 46 and not on the sixth surface portion S423 of the electrode portion 426, which does not contain copper. Therefore, when connecting the wire 25 to the electrode portion 426 in a step subsequent to the organic film forming step P02, the wire 25 can be directly connected to the electrode portion 426 without removing the insulating functional film 40 from the sixth surface portion S423.

[0086] In the manufacturing process of semiconductor device 410 of this modification, wire 25 may be connected to electrode portion 426 in a step prior to copper oxide film formation step P01 and organic film formation step P02. In this case, wire 25 and electrode portion 426 can also be directly connected to each other.

[0087] According to this modification, the terminal 420 includes an electrode portion 426 formed on the surface of the lead frame 21. The electrode portion 426 has a second surface S2 that does not contain copper, and the second surface S2 does not have a functional film 440 formed thereon. Therefore, as described above, even if the copper oxide film forming step P01 and the organic film forming step P02 are performed on the lead frame 21 on which the electrode portion 426 is formed, the functional film 440 is not formed on the surface of the electrode portion 426. Therefore, even if the wire 25 is connected to the electrode portion 426 after the functional film 440 is formed on the lead frame 21 in the copper oxide film forming step P01 and the organic film forming step P02, the wire 25 and the electrode portion 426 can be directly connected without removing the insulating functional film 440 from the surface of the electrode portion 426. This prevents an increase in the number of steps required to connect the wire 25 to the electrode portion 426.

[0088] Furthermore, in this modification, as described above, the wire 25 can be directly connected to the electrode portion 426 in either the case where the wire 25 is connected to the electrode portion 426 in a step prior to the copper oxide film forming step P01 and the organic film forming step P02, or the case where the wire 25 is connected to the electrode portion 426 in a step subsequent to the copper oxide film forming step P01 and the organic film forming step P02. This increases the flexibility of the manufacturing process for the semiconductor device 410.

[0089] (Fifth Modification) 11 is a cross-sectional view showing a semiconductor device 510 according to a fifth modification of the embodiment. In the semiconductor device 510 according to this modification, the shape of the lead frame 521 is different from the shape of the lead frame 21 according to the above-described embodiment. In the following description, the same components as those in the above-described embodiment are denoted by the same reference numerals, and their description will be omitted. The semiconductor device 510 according to this modification includes a semiconductor element 31, a terminal 520, and a resin portion 560.

[0090] The terminals 520 electrically connect the semiconductor element 31 to a power source and a driven body (not shown) that are arranged outside the semiconductor device 510. In this modification, the terminals 520 include a lead frame 521.

[0091] Both ends of the lead frame 521 in the first direction D1 protrude from the resin part 560. In this modification, the lead frame 521 is made of copper. At least a part of the surface of the lead frame 521 is the first surface S1. In this modification, the entire surface of the lead frame 521 is the first surface S1. The lead frame 521 has a first lead frame 22 and a second lead frame 523.

[0092] The second lead frame 523 has a fourth portion 523a, a fifth portion 523b, and a sixth portion 523c. The fourth portion 523a is plate-shaped and extends in a direction perpendicular to the up-down direction. The fourth portion 523a is disposed above the semiconductor element 31. The fourth portion 523a is located inside the resin portion 560. The semiconductor element 31 is fixed to the lower surface of the fourth portion 523a via a bonding material 533. The fifth portion 523b is plate-shaped and extends downward toward the other side (-D1 side) of the first direction D1. An end of the fifth portion 523b on one side (+D1 side) of the first direction D1 is connected to an end of the fourth portion 523a on the other side of the first direction D1. The fifth portion 523b is located inside the resin portion 560. The sixth portion 523c is plate-shaped and extends in a direction perpendicular to the up-down direction. An end of the sixth portion 523c on one side in the first direction D1 is connected to the lower end of the fifth portion 523b. A part of the sixth portion 523c is located inside the resin portion 560. An end of the sixth portion 523c on the other side in the first direction D1 is located outside the resin portion 560. The second lead frame 523 has a third surface portion S513 and a fourth surface portion S514.

[0093] The third surface portion S513 includes a portion of the lower surface of the fourth portion 523a that is closer to the other side (-D1 side) in the first direction D1 than the bonding material 533, a surface of the fifth portion 523b that faces one side (+D1 side) in the first direction D1, and a surface of the sixth portion 523c that faces one side in the first direction D1. The third surface portion S513 is the first surface S1. The third surface portion S513 is covered with the resin portion 560.

[0094] The fourth surface portion S514 includes a portion of the lower surface of the fourth portion 523a that is closer to one side (+D1 side) in the first direction D1 than the bonding material 533, a surface of the fourth portion 523a facing one side in the first direction D1, an upper surface of the fourth portion 523a, a surface of the fifth portion 523b facing the other side in the first direction D1, and a portion of the upper surface of the sixth portion 523c facing one side in the first direction D1. The fourth surface portion S514 is the first surface S1. The fourth surface portion S514 is covered with a resin portion 560. A plating layer 550 is formed on a portion of the surface of the lead frame 521 that is located outside the resin portion 560. Other configurations of the terminal 520 of this modified example are similar to those of the terminal 20 of the above-described embodiment.

[0095] In this modification, a functional film 540 is formed on at least a portion of the first surface S1 of the terminal 520 that is covered by the resin part 560. In this modification, the functional film 540 is formed on each of the first surface portion S11, the second surface portion S12, the third surface portion S513, and the fourth surface portion S514. The outer surface of the functional film 540 contacts the resin part 560. In this modification, the functional film 540 includes a first functional film portion 41, a second functional film portion 42, a third functional film portion 543, and a fourth functional film portion 544.

[0096] The first functional film portion 41 is formed on the first surface portion S11. The second functional film portion 42 is formed on the second surface portion S12. The third functional film portion 543 is formed on the third surface portion S513. The fourth functional film portion 544 is formed on the fourth surface portion S514. Like the functional film 40 of the above-described embodiment, the functional film 540 has a copper oxide film 46 and an organic film 47. Other configurations of the functional film 540 of this modified example are similar to other configurations of the functional film 40 of the above-described embodiment.

[0097] The resin portion 560 covers a portion of the terminal 520 and the semiconductor element 31. The resin portion 560 seals the first surface portion S11, the second surface portion S12, the third surface portion S513, the fourth surface portion S514, and the surface of the semiconductor element 31 from the outside air. A portion of the resin portion 560 is in close contact with the functional film 540 formed on the first surface S1 of the terminal 520. More specifically, a portion of the resin portion 560 is in close contact with the organic film 47. In this modification, the resin portion 560 is bonded to the organic film 47 by a covalent bond via a carbon atom.

[0098] According to this modification, a functional film 540 having an organic film 47 containing oxygen atoms is formed on at least a portion of the portion of the first surface S1 of the terminal 520 that is covered by the resin portion 560, and the organic film 47 is bonded to the resin portion 560. As a result, similar to the above-described embodiment, the organic film 47 and the resin portion 560 are bonded by a covalent bond via a carbon atom, thereby increasing the adhesion between the functional film 540 and the resin portion 560. Therefore, the adhesion between the terminal 520 and the resin portion 560 can be increased via the functional film 540, and peeling of the resin portion 560 from the terminal 520 can be suppressed.

[0099] (Sixth Modification) 12 is a cross-sectional view showing a semiconductor device 610 according to a sixth modified example of the embodiment. The semiconductor device 610 according to this modified example has a heat dissipation portion 628. In the following description, the same components as those in the fifth modified example of the embodiment described above are denoted by the same reference numerals, and their description will be omitted. The semiconductor device 610 according to this modified example includes a semiconductor element 31, a terminal 620, and a resin portion 660. The terminal 620 includes a lead frame 521 and a heat dissipation portion 628.

[0100] The heat dissipation portion 628 has a plate shape that extends in a direction perpendicular to the up-down direction. In this modification, the heat dissipation portion 628 is made of copper. Therefore, the surface of the heat dissipation portion 628 is the first surface S1. The heat dissipation portion 628 is fixed to the upper surface of the fourth portion 523a. The upper surface of the heat dissipation portion 628 is located above the resin portion 660. As a result, during operation of the semiconductor device 610, heat generated in the semiconductor element 31 is dissipated to the outside of the semiconductor device 610 via the first lead frame 22 and also via the second lead frame 523 and the heat dissipation portion 628. Therefore, compared to a configuration in which the semiconductor device 610 does not have the heat dissipation portion 628, an increase in the temperature of the semiconductor element 31 during operation of the semiconductor device 610 can be suppressed. Therefore, the stability of the operation of the semiconductor device 610 can be improved, and the reliability of the semiconductor device 610 can be more suitably improved.

[0101] In this modification, the terminal 620 has a first surface portion S11, a second surface portion S12, a third surface portion S513, a fourth surface portion S614, and a fifth surface portion S615.

[0102] The fourth surface portion S614 includes a portion of the lower surface of the fourth portion 523a that is closer to one side in the first direction D1 (+D1 side) than the bonding material 533, a surface of the fourth portion 523a that faces one side in the first direction D1, a portion of the upper surface of the fourth portion 523a that is closer to one side in the first direction D1 than the heat dissipation portion 628, and a surface of the heat dissipation portion 628 that faces one side in the first direction D1. The fourth surface portion S614 is the first surface S1. The fourth surface portion S614 is covered with the resin portion 660.

[0103] The fifth surface portion S615 includes a surface of the heat dissipation portion 628 facing the other side in the first direction D1 (-D1 side), a portion of the upper surface of the fourth portion 523a that is closer to the other side in the first direction D1 than the heat dissipation portion 628, a surface of the fifth portion 523b facing the other side in the first direction D1, and a portion of the upper surface of the sixth portion 523c that is on one side in the first direction D1 (+D1 side). The fifth surface portion S615 is the first surface S1. The fifth surface portion S615 is covered with a resin portion 660. A plating layer 650 is formed on the surface of the lead frame 521 and the surface of the heat dissipation portion 628 that are located outside the resin portion 660. Other configurations of the terminal 620 of this modified example are similar to those of the terminal 520 of the fifth modified example of the above-described embodiment.

[0104] In this modification, a functional film 640 is formed on at least a portion of the first surface S1 of the terminal 620 that is covered by the resin portion 660. In this modification, the functional film 640 is formed on each of the first surface portion S11, the second surface portion S12, the third surface portion S513, the fourth surface portion S614, and the fifth surface portion S615. The outer surface of the functional film 640 is in contact with the resin portion 660. In this modification, the functional film 640 includes a first functional film portion 41, a second functional film portion 42, a third functional film portion 543, a fourth functional film portion 644, and a fifth functional film portion 645.

[0105] The fourth functional film portion 644 is formed on the fourth surface portion S614. The fifth functional film portion 645 is formed on the fifth surface portion S615. Like the functional film 40 of the above-described embodiment, the functional film 640 has a copper oxide film 46 and an organic film 47. Other configurations of the functional film 640 of this modified example are similar to other configurations of the functional film 540 of the fifth modified example of the above-described embodiment.

[0106] The resin portion 660 covers a portion of the terminal 620 and the semiconductor element 31. The resin portion 660 seals the first surface portion S11, the second surface portion S12, the third surface portion S513, the fourth surface portion S614, the fifth surface portion S615, and the surface of the semiconductor element 31 from the outside air. A portion of the resin portion 660 is in close contact with the functional film 640 formed on the first surface S1 of the terminal 620. More specifically, a portion of the resin portion 660 is in close contact with the organic film 47. In this modification, the resin portion 660 is bonded to the organic film 47 by a covalent bond via a carbon atom.

[0107] According to this modification, a functional film 640 having an organic film 47 containing oxygen atoms is formed on at least a portion of the first surface S1 of the terminal 620 that is covered by the resin portion 660, and the organic film 47 is bonded to the resin portion 660. As a result, similar to the above-described embodiment, the organic film 47 and the resin portion 660 are bonded by a covalent bond via a carbon atom, thereby increasing the adhesion between the functional film 640 and the resin portion 660. Therefore, the adhesion between the terminal 620 and the resin portion 660 can be increased via the functional film 640, and peeling of the resin portion 660 from the terminal 620 can be suppressed.

[0108] According to at least one of the embodiments described above, a functional film having an organic film containing oxygen atoms is formed on at least a portion of the portion of the first surface that is covered by the resin portion, thereby providing a semiconductor device that can prevent the resin portion from peeling off from the terminal.

[0109] The semiconductor device of the embodiment includes the following additional features. (Appendix 1) A semiconductor element; a terminal connected to the semiconductor element, the terminal having a first surface at least part of which contains copper; a resin portion covering a portion of the terminal and the semiconductor element; Equipped with a functional film having an organic film containing oxygen atoms is formed on at least a part of the portion of the first surface that is covered by the resin portion; The organic film is bonded to the resin portion. (Appendix 2) the functional film has a copper oxide film between the first surface and the organic film, the copper oxide film being made of copper oxide; 2. The semiconductor device according to claim 1, wherein the copper oxide film is in close contact with the first surface. (Appendix 3) 3. The semiconductor device according to claim 2, wherein the copper oxide film has a thickness of 1 nm or more and 15 nm or less. (Appendix 4) 4. The semiconductor device according to claim 2, wherein the organic film has a thickness of 10 nm or more and 200 nm or less. (Appendix 5) 5. The semiconductor device according to claim 4, wherein the organic film has a thickness of 10 nm or more and 60 nm or less. (Appendix 6) 6. The semiconductor device according to claim 1, wherein at least a portion of the terminal is made of copper, an alloy containing copper, or a metal material other than copper whose surface is copper-plated. (Appendix 7) the terminal includes a lead frame and a wire connecting the lead frame and the semiconductor element; 7. The semiconductor device according to claim 1, wherein at least a portion of a surface of the lead frame and a surface of the wire are the first surface. (Appendix 8) the terminal includes an electrode portion formed on a surface of the lead frame, the electrode portion has a second surface that does not contain copper; 8. The semiconductor device according to claim 7, wherein the functional film is not formed on the second surface. (Appendix 9) the terminal includes a lead frame and a wire connecting the lead frame and the semiconductor element; a surface of the lead frame is the first surface; a surface of the wire is a copper-free second surface; 7. The semiconductor device according to claim 1, wherein the functional film is not formed on the second surface. (Appendix 10) a plating layer is formed on a portion of the surface of the lead frame that is located outside the resin portion; 10. The semiconductor device according to claim 7, wherein the distance between the functional film and the plating layer is 100 μm or more.

[0110] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as the inventions described in the claims and their equivalents. [Explanation of symbols]

[0111] 10,110,210,310,410,510,610...Semiconductor device, 20,120,220,320,420,520,620...Terminal, 21,121,221,521...Lead frame, 25,325...Wire, 31...Semiconductor element, 40,140,240,340,440,540,640...Functional film, 46...Copper oxide film, 47...Organic film, 50,150,250,550,650...Plating layer, 60,160,260,560,660...Resin portion, 426...Electrode portion, S1...First surface, S2...Second surface

Claims

1. A semiconductor element; a terminal connected to the semiconductor element, the terminal being a first surface at least part of which contains copper; a resin portion covering a portion of the terminal and the semiconductor element; Equipped with a functional film having an organic film containing oxygen atoms is formed on at least a part of the portion of the first surface that is covered by the resin portion; The organic film is bonded to the resin portion.

2. the functional film has a copper oxide film between the first surface and the organic film, the copper oxide film being made of copper oxide; The semiconductor device according to claim 1 , wherein said copper oxide film is in close contact with said first surface.

3. 3. The semiconductor device according to claim 2, wherein the copper oxide film has a thickness of 1 nm or more and 15 nm or less.

4. 3. The semiconductor device according to claim 2, wherein the organic film has a thickness of 10 nm or more and 200 nm or less.

5. 5. The semiconductor device according to claim 4, wherein the organic film has a thickness of 10 nm or more and 60 nm or less.

6. 2. The semiconductor device according to claim 1, wherein at least a portion of said terminal is made of any one of copper, an alloy containing copper, and a metal material other than copper whose surface is copper-plated.

7. the terminal includes a lead frame and a wire connecting the lead frame and the semiconductor element; The semiconductor device according to claim 1 , wherein at least a portion of each of a surface of the lead frame and a surface of the wire is the first surface.

8. the terminal includes an electrode portion formed on a surface of the lead frame, the electrode portion has a second surface that does not contain copper; The semiconductor device according to claim 7 , wherein the functional film is not formed on the second surface.

9. the terminal includes a lead frame and a wire connecting the lead frame and the semiconductor element; a surface of the lead frame is the first surface; a surface of the wire is a copper-free second surface; The semiconductor device according to claim 1 , wherein the functional film is not formed on the second surface.

10. a plating layer is formed on a portion of the surface of the lead frame that is located outside the resin portion; 8. The semiconductor device according to claim 7, wherein the distance between the functional film and the plating layer is 100 [mu]m or more.

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