Semiconductor device

Abstract

To provide a semiconductor device capable of accommodating semiconductor elements such as power semiconductor chips and electronic components within limited space while removing heat generated by the target.SOLUTION: A semiconductor device comprises a semiconductor element with a heat dissipation surface oriented in one direction, a composite material containing graphite, having a receiving surface facing the heat dissipation surface along one direction, and a heat dissipation member having a mounting surface intersecting one direction and dissipating heat from the semiconductor element, and the composite material can be mounted vertically on the mounting surface, and the semiconductor element transfers heat to the composite material through the heat receiving surface from the heat dissipation surface.SELECTED DRAWING: Figure 16

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Composite materials including graphite materials are known for use as lead frames.

[0003] For example, Patent Document 1 discloses "a power module to be installed in an automobile or the like, comprising a cooler, an insulating substrate joined to the cooler, an electronic circuit mounted on the insulating substrate, a case, and terminals." The cooler is described as removing heat generated in the electronic circuit by heat exchange with a refrigerant circulating inside. The insulating substrate is described as a flat plate-shaped member made of an insulating material such as ceramic and joined to the cooler by solder. The electronic circuit is mounted on the insulating substrate and includes a heat-conducting metal layer, printed wiring (metal layer), a power semiconductor chip, a lead frame, and a ribbon. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-163932 Summary of the Invention [Problem to be solved by the invention]

[0005] The power module described above transfers and removes heat generated in the power semiconductor chips in two separate ways. In one system, the generated heat is transferred from the underside of the power semiconductor chip to the insulating substrate via the printed wiring directly below. In the other system, the generated heat is transferred to the insulating substrate via the lead frame. The heat transferred to the insulating substrate is transferred to the cooler via a heat-conducting metal layer printed on the insulating substrate, where it is removed by heat exchange. The lead frame is a composite material containing graphite, and therefore has a higher thermal conductivity than metal. This allows for more efficient cooling of semiconductors. However, the above-mentioned power module requires a sufficient space because the heat generated in the power semiconductor chip is transferred through two separate systems. Therefore, it is desirable to install semiconductor elements such as power semiconductor chips and electronic components in a limited space and remove the heat generated by the object.

[0006] An object of the present disclosure is to provide a semiconductor device that solves the above-mentioned problems. [Means for solving the problem]

[0007] The semiconductor device of the present disclosure comprises a semiconductor element having a heat dissipation surface along one direction, a composite material containing graphite having a receiving surface along the one direction opposite the heat dissipation surface, and a heat dissipation member having an attachment surface intersecting the one direction and dissipating heat from the semiconductor element, wherein the composite material can be erected on the attachment surface, and the semiconductor element transfers heat to the composite material from the heat dissipation surface through the receiving surface. [Effects of the Invention]

[0008] According to the semiconductor device of the present disclosure, it is possible to install semiconductor elements such as power semiconductor chips and electronic components in a limited space and remove heat generated by the object. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a perspective view illustrating an example of a configuration of a semiconductor device according to the present disclosure. [Figure 2] 1 is a cross-sectional view I showing an example of the configuration of a semiconductor device according to the present disclosure. [Figure 3] 1 is a perspective view I showing an example of a hybrid IC according to the present disclosure. [Figure 4] 1 is a plan view showing an example of a hybrid IC according to the present disclosure. [Figure 5] 2 is a perspective view II showing an example of a hybrid IC according to the present disclosure. FIG. [Figure 6] FIG. 1 is a partially enlarged view of part X. [Figure 7] 1 is a cross-sectional view I showing an example of the configuration of a semiconductor device in a comparative example. [Figure 8] 2 is a cross-sectional view II showing an example of the configuration of a semiconductor device in a comparative example. [Figure 9] 2 is a cross-sectional view II showing an example of the configuration of a semiconductor device according to the present disclosure. [Figure 10] FIG. 1 is a partially enlarged view of part Y. [Figure 11] 3 is a cross-sectional view III showing an example of the configuration of a semiconductor device according to the present disclosure. [Figure 12] FIG. 1 is a partially enlarged view of part Z. [Figure 13] 1 is a diagram I showing a procedure for connecting semiconductor elements according to the present disclosure via a metal member. [Figure 14] 11 is a diagram II showing a procedure for connecting semiconductor elements according to the present disclosure via a metal member. [Figure 15] 3 is a diagram III showing a procedure for connecting semiconductor elements according to the present disclosure via a metal member. [Figure 16] 4 is a perspective view IV showing an example of the configuration of a semiconductor device according to the present disclosure. [Figure 17] 10 is a cross-sectional view I showing an example of the configuration of a semiconductor device according to a modified example. [Figure 18] 11 is a cross-sectional view II showing an example of the configuration of a semiconductor device according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, each embodiment of the present disclosure will be described with reference to the drawings. Note that the drawings and specific configurations used in each embodiment should not be used to interpret the disclosure. The same or corresponding configurations in all drawings will be assigned the same reference numerals, and common descriptions will be omitted. It should be noted that in this disclosure, the drawings may relate to one or more embodiments.

[0011] First Embodiment Hereinafter, an embodiment according to the present disclosure will be described with reference to the drawings. An example of the configuration of a semiconductor device according to the present disclosure will be described below with reference to FIGS.

[0012] (Configuration of semiconductor device) The semiconductor device 1 is used to remove heat generated in the semiconductor element by transferring the heat generated in the semiconductor element to the heat dissipation member via the graphite. As shown in FIG. 1, the semiconductor device 1 includes a semiconductor element 11, a composite material 12, a heat dissipation member 13, and a transmission member .

[0013] (semiconductor element) For example, the semiconductor element 11 is a high-frequency integrated circuit. In this disclosure, a monolithic microwave integrated circuit (MMIC), which is a type of microwave integrated circuit (MIC), is used as the semiconductor element 11. The MMIC of the present disclosure is used in outer space. The semiconductor element 11 has a heat dissipation surface 11HdS along one direction OD. The semiconductor element 11 transfers heat from the heat dissipation surface 11HdS to the composite material 12 through a receiving surface 12RS, which will be described later.

[0014] For example, the heat dissipation surface 11HdS may be a metal surface. For example, the heat dissipation surface 11HdS may be a metal surface made of a copper alloy such as copper-tungsten. If the surface of the semiconductor element 11 that faces the receiving surface 12RS and is close to the receiving surface 12RS is made a metal surface, heat can be efficiently transferred to the composite material 12. For example, the heat transfer coefficient of copper tungsten is approximately 170 to 220 (W / m·K).

[0015] (composite material) The composite material 12 is a composite material containing graphite. For example, the graphite contained in the composite material 12 has a layered structure, and the direction of heat transfer by the composite material 12 is appropriately set depending on the layering direction. In this disclosure, the graphite contained in the composite material 12 will be described as transferring heat in one direction OD. Other examples will be described in the modified examples below. The composite material 12 has a receiving surface 12RS along one direction. The receiving surface 12RS faces the heat dissipation surface 11HdS. For example, the receiving surface 12RS and the heat dissipation surface 11HdS may be parallel to each other. The composite material 12 can be provided upright on the mounting surface 13S, which will be described later. That is, the composite material 12 may be provided upright on the mounting surface 13S at all times, or may be removable from the mounting surface 13S. Removable composite materials will be described in detail in the modified examples. In the present disclosure, the composite material 12 will be described as being provided upright on the mounting surface 13S at all times. The positional relationship between the composite material 12 and the semiconductor element 11 will now be described. The composite material 12 includes a part of the projected area of ​​the semiconductor element 11 projected in a direction intersecting one direction OD. In other words, the composite material 12 is erected so that a part of the semiconductor element 11 overlaps with the composite material 12 when viewed from the intersecting direction. For example, the heat transfer coefficient of graphite is approximately 200 to 1800 (W / m·K).

[0016] For example, the composite material 12 may further include a metal material, such as copper. For example, forming a layer 12P made of a metal material (copper) on the receiving surface 12RS of the composite material 12 can increase the contact area between the receiving surface 12RS and a member that comes into contact with the receiving surface 12RS, or can protect the graphite.

[0017] (heat dissipation material) The heat dissipation member 13 removes heat generated by the semiconductor element 11, thereby dissipating heat from the semiconductor element 11. The heat dissipation member 13 has an attachment surface 13S that intersects with the one direction OD. As described above, the composite material 12 is provided upright on the attachment surface 13S. That is, when heat is transferred in the one direction OD by the graphite contained in the composite material 12, the heat is transferred to the heat dissipation member 13 that is in contact with the composite material 12 at the attachment surface 13S. For example, the heat dissipation member 13 is a satellite body panel, which is generally made of aluminum.

[0018] The heat dissipation member 13 may also be a heat transfer member such as a heat pipe or a vapor chamber. In this case, the composite material 12 is in contact (standing upright) with one surface (attachment surface 13S) of the heat transfer member, and a member to which heat transferred from the composite material 12 is to be transferred is in contact with the other surface.

[0019] (Transmission component) The transfer member 14 transfers the heat from the heat-radiating surface 11HdS to the heat-receiving surface 12RS. The semiconductor element 11 and the composite material 12 are thermally connected via a transmission member 14 .

[0020] (Semiconductor device 1B) Hereinafter, a semiconductor device 1B, which further includes a hybrid integrated circuit 11HIC including a semiconductor element 11 and a housing 15, as shown in FIG. 2, will be described in detail. In the following disclosure, the hybrid integrated circuit 11HIC included in the semiconductor device 1B will be described as a hybrid integrated circuit 11HIC_B. The hybrid integrated circuit 11HIC_B has a base plate 11BP that transfers heat from the heat dissipation surface 11HdS. This base plate 11BP is aligned along the one direction OD, just like the heat dissipation surface 11HdS. Since the base plate 11BP is aligned along the one direction OD, the heat dissipation surface 11BPS of the base plate is also aligned along the one direction OD.

[0021] (Configuration of hybrid integrated circuit 11HIC_B) As shown in FIGS. 3 and 4, the hybrid integrated circuit 11HIC_B has a base plate 11BP, a ring portion 11R, a cap portion 11C, a plurality of lead wires 11L_G, an input portion 11IN, and an output portion 11OUT. One surface (heat dissipation surface 11BPS) of the base plate 11BP is thermally connected to the composite material 12 via the transmission member 14B. On the other surface, a ring portion 11R having a closed area is erected on the surface on which it is disposed, and a cap portion 11C is disposed in the opening of the ring portion 11R. The semiconductor element 11 is housed in the space formed by the base plate 11BP, the ring portion 11R, and the cap portion 11C. This space is a vacuum space, taking into account discharges that may occur when the MMIC is used in outer space.

[0022] The number of the leads 11L included in the plurality of leads 11L_G is not specified, and the arrangement direction of the leads is not limited. For example, with respect to a plane in the hybrid integrated circuit 11HIC_B after installation that intersects the mounting surface 13S and has one direction OD, the leads may be arranged as follows. For example, the leads 11L may be arranged in the same plane as shown in FIG. 4, or may be arranged in a direction that intersects with the plane as shown in FIG. 5. Furthermore, the arrangement direction of the input section 11IN and the output section 11OUT is not limited, as with the above description of the arrangement direction of the leads. If the lead wires 11L (input portion 11IN, output portion 11OUT) are provided in the same plane as shown in FIG. 4, the contact area between the heat dissipation surface 11BPS of the base plate and the receiving surface 12RS can be increased.

[0023] For example, structures can be attached to the input unit 11IN and the output unit 11OUT. Examples of such structures include a waveguide and a coaxial cable. In this case, heat generated by the structure attached to the hybrid integrated circuit 11HIC_B can be dissipated by the heat dissipation member 13 via the composite material 12.

[0024] (housing) As shown again in FIG. 2, the housing 15 houses the semiconductor device 11 and the composite material 12 . Several electronic components that dissipate heat like the semiconductor element 11 are housed inside the housing 15. For example, a substrate SUB on which an IC (Integrated Circuit) chip is mounted, a support member SM that supports the substrate SUB, and the like are housed inside the housing 15. When the housed electronic components dissipate heat, the heat is transferred to the housing 15 via the support member SM. The housing 15 is in contact with the mounting surface 13S, so that heat transferred to the housing 15 can be discharged via the heat dissipation member 13. For example, housing 15 is made of aluminum. Housing 15 may include at least a portion thereof made of a composite material containing graphite. That is, aluminum may be used in the portions of housing 15 that require rigidity, and a composite material containing graphite may be used in the portions of housing 15 that require thermal conductivity (for example, the portion in contact with mounting surface 13S). For example, the heat transfer coefficient of aluminum used for the housing 15 is 237 (W / m·K).

[0025] (Transmission component: Adhesive component) In the following disclosure, the transmission member 14 will be described as a transmission member 14B. 6, the transmission member 14B includes an adhesive member 14BM. The adhesive member 14BM bonds the base plate 11BP and the composite material 12. This allows the semiconductor element 11 to be thermally connected to the composite material 12 via the base plate 11BP. For example, the adhesive member 14BM is a heat dissipating adhesive. For example, the heat transfer coefficient of a heat-dissipating adhesive is about 0.1 to 10 (W / m·K).

[0026] (Transmission pathway) In FIG. 6, first, heat radiated from the semiconductor element 11 is radiated through the heat radiating surface 11HdS. The radiated heat is then received by the base plate 11BP and dissipated through the heat dissipation surface 11BPS. Next, the composite material 12 receives the heat through the adhesive member 14BM, and the graphite contained in the composite material 12 transfers the heat toward the heat dissipation member 13. Thus, a transmission path TR_B from the heat dissipating surface 11HdS to the heat dissipating member 13 via the receiving surface 12RS is shown.

[0027] (Action and effect) The semiconductor device 1B of the present disclosure includes a semiconductor element 11 having a heat dissipation surface 11HdS along one direction OD, a composite material 12 containing graphite, and a heat dissipation member 13 that dissipates heat from the semiconductor element 11. The heat receiving surface 12RS of the composite material 12 is oriented in the same direction as the heat dissipation surface 11HdS. Furthermore, the heat dissipation surface 11HdS and the heat receiving surface 12RS face each other. This allows heat to move in a direction intersecting the axial direction OD. In other words, heat generated in the semiconductor element 11 is transferred from the heat dissipation surface 11HdS to the composite material 12 via the heat receiving surface 12RS. Here, since the composite material 12 is erected on the mounting surface 13S of the heat dissipation member 13, the heat transferred to the composite material 12 is easily transferred to the heat dissipation member 13 via the mounting surface 13S due to the graphite. The mounting surface 13S and the receiving surface 12RS of the erected composite material 12 intersect with each other. Therefore, the heat transfer path TR_B formed by the semiconductor element 11, the composite material 12, and the heat dissipation member 13 is formed from multiple directions. By forming the transfer path TR_B from multiple directions, the semiconductor element 11 can be installed with more freedom, making it easier to install electronic components in a limited space. Therefore, the semiconductor device of the present disclosure can accommodate semiconductor elements such as power semiconductor chips and electronic components in a limited space and remove heat generated by the target.

[0028] 7 and 8 show a semiconductor device of a comparative example. The housing 15 contains several electronic components that dissipate heat in the same way as the semiconductor element 11. For example, a substrate SUB on which an IC chip is mounted, a support member SM that supports the substrate SUB, and the like. When the contained electronic components dissipate heat, the heat is transferred to the housing 15 via the support member SM. In outer space, heat must be transferred by thermal conduction. When the housing 15 is in contact with the mounting surface 13S, the heat transferred to the housing 15 can be discharged via the heat dissipation member 13. As shown in Fig. 7, in the semiconductor device 101 of Comparative Example 1, the heat-generating component 11 is arranged in a direction that intersects with the mounting surface. In other words, if the mounting surface includes a horizontal direction, the heat-generating component 11 of the semiconductor device 101 is arranged in a vertical direction. The reason for this is the amount of heat generated by the heat-generating component 11 and the transmission path described below. In the semiconductor device 101, if the heat-generating component 11 is a low-heat-generating device, it is preferable to place it vertically because the amount of heat generated is small. 8, in the semiconductor device 102 of Comparative Example 2, the heat-generating component 11 is arranged horizontally, unlike the semiconductor device 101 of Comparative Example 1. In the semiconductor device 102, if the heat-generating component 11 is a high-heat-generating device, it is preferable to place it horizontally because the amount of heat generated is greater than that of a low-heat-generating device. The semiconductor device 101 of Comparative Example 1 and the semiconductor device 102 of Comparative Example 2 have different distances between the mounting surface and the heat-generating component 11. If this distance is considered as a transmission path, the transmission path TR_2 of Comparative Example 2 is shorter from the heat-generating component 11 to the mounting surface than the transmission path TR_1 of Comparative Example 1. Therefore, the semiconductor device 102 of Comparative Example 2, which has the transmission path TR_2, can easily dissipate heat from the mounting surface via the housing 115. Therefore, for high heat generation devices that generate more heat than low heat generation devices, the layout of Comparative Example 2, which allows for a shorter transmission path, is preferred. For low heat generation devices, the layout of Comparative Example 1, which allows for placement in places with limited space, is preferred, as it can also be interpreted as allowing for a longer transmission path. However, as can be seen from Figure 8, if the high heat generating devices are arranged so that the transmission path takes priority, the high heat generating devices may come into contact with the substrate SUB, support member SM, and the like housed in the housing 115. To avoid this contact, the design of the housing 115 must be changed. Furthermore, as a result of the transmission path being given priority for all the high heat generating devices, the high heat generating devices are concentrated near the mounting surface, increasing the footprint of the housing 115. This makes it difficult to miniaturize the semiconductor device.

[0029] In contrast to the comparative example, the semiconductor device of the present disclosure includes a semiconductor element 11 having a heat dissipation surface 11HdS along one direction OD, a composite material 12 containing graphite, and a heat dissipation member 13 that dissipates heat from the semiconductor element 11. The heat receiving surface 12RS of the composite material 12 is oriented in the same direction as the heat dissipation surface 11HdS. Furthermore, the heat dissipation surface 11HdS and the heat receiving surface 12RS face each other. This allows heat to move in a direction intersecting the axial direction OD. In other words, heat generated in the semiconductor element 11 is transferred from the heat dissipation surface 11HdS to the composite material 12 via the heat receiving surface 12RS. Here, since the composite material 12 is erected on the mounting surface 13S of the heat dissipation member 13, the heat transferred to the composite material 12 is easily transferred to the heat dissipation member 13 via the mounting surface 13S due to the graphite. The mounting surface 13S and the receiving surface 12RS of the erected composite material 12 intersect with each other. Therefore, the heat transfer path TR formed by the semiconductor element 11, the composite material 12, and the heat dissipation member 13 is formed from multiple directions. By forming the transfer path TR from multiple directions, the semiconductor element 11 can be installed with more freedom, making it easier to install electronic components in a limited space. In the semiconductor device of the present disclosure, when a high heat-generating device is installed, the transfer path TR is longer than the transfer path TR2 in Comparative Example 2, but this is compensated for by the improved transfer efficiency due to the thermal conductivity of graphite. That is, in the semiconductor devices of Comparative Examples 1 and 2, heat is transferred to the mounting surface via an aluminum housing, but in the semiconductor device of the present disclosure, heat is transferred to mounting surface 13S via composite material 12 containing graphite. This means that high heat-generating devices can be installed in the same way as low heat-generating devices. Therefore, the semiconductor device of the present disclosure can reduce the footprint of the housing 15 relative to the mounting surface 13S while allowing the high heat generating device to prioritize the transmission path, thereby contributing to miniaturization of the semiconductor device.

[0030] Furthermore, in the case of space equipment, the environment in which it is used is a vacuum, so the cooling effect of air cooling using convection cannot be expected, and heat dissipation by thermal conduction must be considered.In addition, in the case of space equipment, electronic components must be installed in a particularly limited space. In the semiconductor device of the present disclosure, the transmission path TR_B is formed from multiple directions, which creates flexibility in the installation of the semiconductor element 11, and therefore hybrid integrated circuits equipped with MMICs that generate a large amount of heat can be installed in the same way as low-heat-generating devices.

[0031] Furthermore, the semiconductor device of the present disclosure "comprises a semiconductor element 11 having a heat dissipation surface 11HdS along one direction OD, a composite material 12 having a receiving surface 12RS along one direction OD and containing graphite, and a heat dissipation member 13 having an attachment surface 13S intersecting the one direction OD and dissipating heat from the semiconductor element 11, wherein the composite material 12 can be erected on the attachment surface 13S, and the semiconductor element 11 transfers heat from the heat dissipation surface 11HdS to the composite material 12 through the receiving surface 12RS," thereby achieving the following effects. The semiconductor device 1B of the present disclosure includes a semiconductor element 11 having a heat dissipation surface 11HdS along one direction OD, a composite material 12 containing graphite, and a heat dissipation member 13 that dissipates heat from the semiconductor element 11. The heat receiving surface 12RS of the composite material 12 is oriented in the same direction as the heat dissipation surface 11HdS. Furthermore, the heat dissipation surface 11HdS and the heat receiving surface 12RS face each other. This allows heat to move in a direction intersecting the axial direction OD. In other words, heat generated in the semiconductor element 11 is transferred from the heat dissipation surface 11HdS to the composite material 12 via the heat receiving surface 12RS. Here, since the composite material 12 is erected on the mounting surface 13S of the heat dissipation member 13, the heat transferred to the composite material 12 is easily transferred to the heat dissipation member 13 via the mounting surface 13S due to the graphite. The mounting surface 13S and the receiving surface 12RS of the erected composite material 12 intersect with each other. As a result, a heat transfer path TR_B formed from the semiconductor element 11, the composite material 12, and the heat dissipation member 13 is formed from multiple directions. By forming the transfer path TR_B from multiple directions, a degree of freedom is created in the installation of the semiconductor element 11, and an effect can be obtained that "electronic components can be easily installed in a limited space." Therefore, the semiconductor device of the present disclosure can accommodate semiconductor elements such as power semiconductor chips and electronic components in a limited space and remove heat generated by the target.

[0032] In addition, the semiconductor device of the present disclosure further includes a transmission member 14 that transmits heat from the heat dissipation surface 11HdS to the receiving surface 12RS, and the semiconductor element 11 and the composite material 12 are thermally connected via the transmission member 14, thereby achieving the effect of "dissipating heat through thermal conduction and making it easier to install electronic components in limited space."

[0033] In addition, the semiconductor device of the present disclosure further includes "a hybrid integrated circuit having a semiconductor element 11, and the hybrid integrated circuit has a base plate that transfers heat from the heat dissipation surface 11HdS," thereby achieving the effect that "the heat generated by the semiconductor element 11 is received by the base plate 11BP, making it less likely for the heat to remain in the semiconductor element 11."

[0034] Additionally, in the semiconductor device of the present disclosure, "transmission member 14B includes adhesive member 14BM, which bonds base plate 11BP and composite material 12, and semiconductor element 11 is connected to composite material 12 via base plate 11BP," thereby achieving the effect of "making it difficult for heat to remain in semiconductor element 11 and enabling heat to be transferred toward composite material 12."

[0035] In addition, in the semiconductor device of the present disclosure, "the graphite contained in composite material 12 has a layered structure and transfers heat in one direction OD," thereby achieving the effect that "heat can be efficiently transferred from composite material 12 toward heat dissipation member 13 having mounting surface 13S that intersects with one direction OD."

[0036] In addition, in the semiconductor device of the present disclosure, "the heat dissipation surface 11HdS is a metal surface (hereinafter also referred to as "metal surface 11HdS_G")," and therefore, by making the surface of the semiconductor element 11 that faces the receiving surface 12RS and is close to the receiving surface 12RS the metal surface 11HdS_G, the effect of "efficiently transferring heat to the composite material 12" can also be obtained.

[0037] In addition, in the semiconductor device of the present disclosure, "composite material 12 further contains copper," and therefore, for example, by forming a copper layer 12P on receiving surface 12RS of composite material 12, the effect of "increasing the contact area between the receiving surface and the member in contact with receiving surface 12RS, or protecting the graphite" can be obtained.

[0038] In addition, in the semiconductor device of the present disclosure, "the composite material 12 includes a portion of the projected area of ​​the semiconductor element projected in a direction intersecting the one direction OD," which also provides the effect that "heat is easily transferred from the heat dissipation surface 11HdS through the receiving surface 12RS in a direction intersecting the one direction OD."

[0039] In addition, the semiconductor device of the present disclosure further includes "a housing 15 that stores the semiconductor element 11 and the composite material 12, and the housing 15 is in contact with the mounting surface 13S," thereby achieving the effect that "heat generated by the semiconductor element 11 can be transferred to the heat dissipation member 13 via the housing 15."

[0040] Second Embodiment The semiconductor device disclosed below focuses on the fact that the base plate 11BP included in the semiconductor device 1B disclosed above is replaced with a base plate 11BP_C, which makes it easier to dissipate heat generated by the semiconductor element 11. Hereinafter, an embodiment according to the present disclosure will be described with reference to the drawings. An example of the configuration of a semiconductor device according to the present disclosure will be described below with reference to FIGS. In addition, components common to those disclosed above are given the same reference numerals and detailed description thereof will be omitted.

[0041] (Semiconductor device 1C) In the following disclosure, a semiconductor device 1C in which the hybrid integrated circuit 11HIC_B included in the semiconductor device 1B is replaced with a hybrid integrated circuit 11HIC_C will be described in detail. 9 and 10, the hybrid integrated circuit 11HIC_C is obtained by replacing the base plate 11BP of the hybrid integrated circuit 11HIC_B with a base plate 11BP_C. The base plate 11BP_C includes graphite. For example, the heat transfer coefficient of graphite contained in the base plate 11BP_C is approximately 200 to 1800 (W / m·K).

[0042] (Transmission pathway) In FIG. 10, first, heat radiated from the semiconductor element 11 is radiated through the heat radiating surface 11HdS. The radiated heat is then received by the base plate 11BP_C and dissipated through the heat dissipation surface 11BPS. Next, the composite material 12 receives the heat via the adhesive member 14BM, and the graphite contained in the composite material 12 transfers the heat toward the heat dissipation member 13. Thus, a transfer path TR from the heat dissipating surface 11HdS to the heat dissipating member 13 via the receiving surface 12RS is shown.

[0043] (Action and effect) The semiconductor device 1C of the present disclosure includes a semiconductor element 11 having a heat dissipation surface 11HdS along one direction OD, a composite material 12 containing graphite, and a heat dissipation member 13 that dissipates heat from the semiconductor element 11. The heat receiving surface 12RS of the composite material 12 is oriented in the same direction as the heat dissipation surface 11HdS. Furthermore, the heat dissipation surface 11HdS and the heat receiving surface 12RS face each other. This allows heat to move in a direction intersecting the axial direction OD. In other words, heat generated in the semiconductor element 11 is transferred from the heat dissipation surface 11HdS to the composite material 12 via the heat receiving surface 12RS. Here, since the composite material 12 is erected on the mounting surface 13S of the heat dissipation member 13, the heat transferred to the composite material 12 is easily transferred to the heat dissipation member 13 via the mounting surface 13S due to the graphite. The mounting surface 13S and the receiving surface 12RS of the erected composite material 12 intersect with each other. Therefore, the heat transfer path TR_C formed by the semiconductor element 11, the composite material 12, and the heat dissipation member 13 is formed from multiple directions. By forming the transfer path TR_C from multiple directions, the semiconductor element 11 can be installed with more freedom, making it easier to install electronic components in a limited space. Therefore, the semiconductor device of the present disclosure can accommodate semiconductor elements such as power semiconductor chips and electronic components in a limited space and remove heat generated by the target.

[0044] Furthermore, the semiconductor device 1C of the present disclosure has the effect that "the base plate 11BP_C contains graphite," which "makes it difficult for heat to remain in the semiconductor element 11 and allows heat to be transferred more efficiently toward the composite material 12."

[0045] Third Embodiment The semiconductor device disclosed below focuses on the fact that by connecting the semiconductor element 11 to the composite material 12 via a metal member 14MC, heat can be dissipated more easily than in the semiconductor device 1B and the semiconductor device 1C disclosed above. Hereinafter, an embodiment according to the present disclosure will be described with reference to the drawings. An example of the configuration of a semiconductor device according to the present disclosure will be described below with reference to FIGS. In addition, components common to those disclosed above are given the same reference numerals and detailed description thereof will be omitted.

[0046] (Semiconductor device 1D) Hereinafter, as shown in FIGS. 11 and 12, a semiconductor device 1D that further includes a hybrid integrated circuit 11HIC having a semiconductor element 11 and a housing 15 in addition to the semiconductor device 1 will be described in detail. Composite material 12 in the following disclosure will be referred to as composite material 12D. A copper layer 12P is formed on the receiving surface 12RS of the graphite-containing composite material 12. Furthermore, it is assumed that a circuit is formed on the receiving surface 12RS of the composite material 12.

[0047] (Configuration of hybrid integrated circuit 11HIC_D) In the following disclosure, the hybrid integrated circuit 11HIC included in the semiconductor device 1D will be described as a hybrid integrated circuit 11HIC_D. The hybrid integrated circuit 11HIC_D may have any configuration of the hybrid integrated circuit 11HIC_B as appropriate. For example, the hybrid integrated circuit 11HIC_D may have a ring portion 11R, a cap portion 11C, a plurality of lead wires 11L_G, an input portion 11IN, and an output portion 11OUT.

[0048] (Transmission component: Metal component) The transmission member 14 in the following disclosure will be described as a transmission member 14 D. The heat dissipation surface 11HdS of the semiconductor element 11 to be connected is a metal surface 11HdS_G. The transmission member 14D includes a metal member 14MC. The metal member 14MC is dissolvable. The metal member 14MC melts to connect the metal surface 11HdS_G of the semiconductor element 11 to the copper layer 12P of the composite material 12. As a result, the semiconductor element 11 is thermally connected to the composite material 12 via the metal member 14MC.

[0049] (Connection using metal parts) The connection between the metal surface 11HdS_G and the copper layer 12P via the metal member 14MC will be described with reference to FIGS. First, as shown in FIG. 13, the worker places the metal member 14MC_B before melting between the metal surface 11HdS_G and the copper layer 12P. Next, as shown in FIG. 14, the worker heats the composite material 12 to melt the metal member 14MC_B. Next, as shown in Figures 14 and 15, the worker moves the metal surface 11HdS_G in direction D, rubs it against the molten metal member 14MC for a while, and then holds the metal surface 11HdS_G until the molten metal member 14MC solidifies. In this way, the semiconductor element 11 is thermally connected to the composite material 12 via the metal member 14MC.

[0050] (Transmission pathway) As shown in FIG. 12 again, first, the heat radiated from the semiconductor element 11 is dissipated through the metal surface 11HdS_G. Next, the radiated heat is received by the composite material 12 via the metal member 14MC, and then the graphite contained in the composite material 12 transfers the heat toward the heat radiating member 13. Thus, a transmission path TR_D from the metal surface 11HdS_G through the receiving surface 12RS to the heat dissipation member 13 is shown.

[0051] (Action and effect) The semiconductor device 1D of the present disclosure includes a semiconductor element 11 having a heat dissipation surface 11HdS (metal surface 11HdS_G) along one direction OD, a composite material 12 containing graphite, and a heat dissipation member 13 that dissipates heat from the semiconductor element 11. The receiving surface 12RS of the composite material 12 is oriented in the same direction as the metal surface 11HdS_G. Furthermore, the metal surface 11HdS_G, which is the heat dissipation surface, and the receiving surface 12RS face each other. This allows heat to move in a direction intersecting the axial direction OD. In other words, heat generated in the semiconductor element 11 is transferred from the metal surface 11HdS_G to the composite material 12 via the receiving surface 12RS. Here, since the composite material 12 is erected on the mounting surface 13S of the heat dissipation member 13, the heat transferred to the composite material 12 is easily transferred to the heat dissipation member 13 via the mounting surface 13S due to the graphite. The mounting surface 13S and the receiving surface 12RS of the erected composite material 12 intersect with each other. Therefore, the heat transfer path TR_D formed by the semiconductor element 11, the composite material 12, and the heat dissipation member 13 is formed from multiple directions. By forming the transfer path TR_D from multiple directions, the semiconductor element 11 can be installed with more freedom, making it easier to install electronic components in a limited space. Therefore, the semiconductor device of the present disclosure can accommodate semiconductor elements such as power semiconductor chips and electronic components in a limited space and remove heat generated by the target.

[0052] Furthermore, the semiconductor device 1D of the present disclosure "connects the metal surface 11HdS_G and the copper layer 12P via the metal member 14MC," thereby achieving the effect of "reducing the number of members between the metal surface 11HdS_G and the receiving surface 12RS, thereby preventing heat transfer loss due to the bonding layer."

[0053] <Fourth embodiment> Hereinafter, one embodiment according to the present disclosure will be described with reference to FIG. An example of the configuration of a semiconductor device according to the present disclosure will be described below with reference to FIG.

[0054] (composition) The semiconductor device 1m comprises a semiconductor element 11m having a heat dissipation surface 11mHdS along one direction, a composite material 12m containing graphite having a receiving surface 12mRS facing the heat dissipation surface 11mHdS along one direction, and a heat dissipation member 13m having a mounting surface 13mS intersecting the one direction and dissipating heat from the semiconductor element 11m, the composite material 12m being able to be erected on the mounting surface 13mS, and the semiconductor element 11m transferring heat to the composite material 12m from the heat dissipation surface 11mHdS through the receiving surface 12mRS.

[0055] (Action and effect) The semiconductor device 1m of the present disclosure includes a semiconductor element 11m having a heat dissipation surface 11mHdS along one direction, a composite material 12m containing graphite, and a heat dissipation member 13m that dissipates heat from the semiconductor element 11m. The receiving surface 12mRS of the composite material 12m is oriented in the same direction as the heat dissipation surface 11mHdS. Furthermore, the heat dissipation surface 11mHdS and the receiving surface 12mRS face each other. This allows heat to move in a direction that intersects with the oriented direction. In other words, the heat generated in the semiconductor element 11m is transferred from the heat dissipation surface 11mHdS to the composite material 12m via the receiving surface 12mRS. Here, since the composite material 12m is erected on the mounting surface 13mS of the heat dissipation member 13m, the heat transferred to the composite material 12m is easily transferred to the heat dissipation member 13m via the mounting surface 13mS. The mounting surface 13mS and the receiving surface 12mRS of the erected composite material 12m intersect with each other. Therefore, the heat transfer path formed by the semiconductor element 11m, the composite material 12m, and the heat dissipation member 13m is formed from multiple directions. By forming the transfer path from multiple directions, the semiconductor element 11m can be installed with more freedom, making it easier to install electronic components in a limited space. Therefore, the semiconductor device of the present disclosure can accommodate semiconductor elements such as power semiconductor chips and electronic components in a limited space and remove heat generated by the target.

[0056] Although the present disclosure has been described above with reference to the embodiments, the present disclosure is not limited to the above-described embodiments. Various modifications that can be understood by those skilled in the art can be made to the configuration and details of the present disclosure within the scope of the present disclosure. Furthermore, each embodiment can be combined with other embodiments as appropriate.

[0057] <Modification> The composite material 12 (composite material 12D) disclosed above may be in contact with the housing 15. By setting the direction of heat transfer by the composite material 12 toward the housing 15 depending on the stacking direction, the heat received by the composite material 12 (composite material 12D) can be transferred to the housing 15. Therefore, the heat generated in the semiconductor element 11 can be efficiently transferred to other members without being trapped therein.

[0058] The composite material 12 (composite material 12D) disclosed above may divide the space contained in the housing 15 in one direction OD. By setting the lamination direction so that the direction of heat transfer through the composite material 12 is less likely to be toward the housing 15, devices for different purposes can be installed in the space VR formed by the division, as shown in Fig. 17 .

[0059] The composite material 12 (composite material 12D) disclosed above may be detachable from the mounting surface 13S. This allows the semiconductor element 11 and the composite material 12 to be attached to the mounting surface 13S at any time, thereby increasing the degree of freedom in layout. In other words, it is no longer necessary to layout devices while considering the procedure for attaching the devices within a limited space, thereby increasing the degree of freedom in layout. As shown in FIG. 18, the housing 15 may further include a guide portion 15G.

[0060] A part or all of the above-described embodiments can be described as, but not limited to, the following supplementary notes.

[0061] (Appendix 1) a semiconductor element having a heat dissipation surface along one direction; a composite material including graphite, the composite material having a receiving surface facing the heat dissipation surface along the one direction; a heat dissipation member having an attachment surface intersecting the one direction and dissipating heat from the semiconductor element; Equipped with the composite material is capable of standing on the mounting surface; The semiconductor element transfers heat from the heat dissipation surface through the receiving surface to the composite material. Semiconductor device.

[0062] (Appendix 2) a transfer member that transfers heat from the heat dissipation surface to the receiving surface; Furthermore, The semiconductor element and the composite material are thermally connected via a transmission member. 2. The semiconductor device according to claim 1.

[0063] (Appendix 3) a hybrid integrated circuit including the semiconductor device; the transmission member includes a meltable metal member; The semiconductor element is connected to the composite material via the metal member. 3. The semiconductor device according to claim 2.

[0064] (Appendix 4) a hybrid integrated circuit including the semiconductor device; The hybrid integrated circuit has a base plate that transfers heat from the heat dissipation surface. 3. The semiconductor device according to claim 2.

[0065] (Appendix 5) The base plate includes graphite. 5. The semiconductor device according to claim 4.

[0066] (Appendix 6) the transmission member includes an adhesive member, the adhesive member bonds the base plate and the composite material together; The semiconductor element is connected to the composite material via the base plate. 6. The semiconductor device according to claim 4 or 5.

[0067] (Appendix 7) The graphite contained in the composite material has a layered structure and transfers heat in the one direction. 7. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0068] (Appendix 8) The heat dissipation surface is a metal surface. 8. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0069] (Appendix 9) The composite material further comprises copper. 9. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer.

[0070] (Appendix 10) The composite material includes a part of a projected area of ​​the semiconductor element projected in the one direction and the intersecting direction. 10. The semiconductor device according to claim 1.

[0071] (Appendix 11) a housing that houses the semiconductor device and the composite material; Furthermore, The housing contacts the mounting surface. 11. The semiconductor device according to claim 1.

[0072] (Appendix 12) The composite material is in contact with the housing. 12. The semiconductor device according to claim 11.

[0073] (Appendix 13) The composite material divides the space contained in the housing in the one direction. 12. The semiconductor device according to claim 11. [Explanation of symbols]

[0074] 1. Semiconductor device 1B Semiconductor Devices 1C Semiconductor Device 1D Semiconductor Device 11 Semiconductor elements 11HdS heat dissipation surface 11HdS_G Metal surface 11HIC Hybrid Integrated Circuit 11BP base plate 11BPS heat dissipation surface 11R Ring section 11C Cap 11IN input section 11OUT Output section 11L_G Multiple leads 11L Each lead wire 12 Composite materials 12RS Receiving surface 12P layer 13 Heat dissipation material 13S Mounting surface 14 Transmission components 14B Transmission member 14BM adhesive material 14D Transmission member 14MC Metallic parts 14MC_B Metallic materials 15 Housing 15G guide part 11HIC_B Hybrid Integrated Circuit 11HIC_C Hybrid Integrated Circuit 11BP_C Base Plate 11HIC_D Hybrid Integrated Circuit OD unidirectional D direction SUB board SM Support Member TR transduction pathway TR_B transmission pathway TR_C transmission pathway TR_D Transmission Pathway TR1 signaling pathway TR2 signaling pathway VR space 1m Semiconductor Device 11m semiconductor element 11mHdS heat dissipation surface 12D composite material 12m composite material 12mRS receiving surface 13m heat dissipation material 13mS Mounting surface

Claims

1. a semiconductor element having a heat dissipation surface along one direction; a composite material including graphite, the composite material having a receiving surface facing the heat dissipation surface along the one direction; a heat dissipation member having an attachment surface intersecting the one direction and dissipating heat from the semiconductor element; Equipped with the composite material is capable of standing on the mounting surface; The semiconductor element transfers heat from the heat dissipation surface through the receiving surface to the composite material. Semiconductor device.

2. a transfer member that transfers heat from the heat dissipation surface to the receiving surface; Furthermore, The semiconductor element and the composite material are thermally connected via a transmission member. The semiconductor device according to claim 1 .

3. a hybrid integrated circuit including the semiconductor device; the transmission member includes a meltable metal member; The semiconductor element is connected to the composite material via the metal member. The semiconductor device according to claim 2 .

4. a hybrid integrated circuit including the semiconductor device; The hybrid integrated circuit has a base plate that transfers heat from the heat dissipation surface. The semiconductor device according to claim 2 .

5. The base plate includes graphite. The semiconductor device according to claim 4 .

6. the transmission member includes an adhesive member, the adhesive member bonds the base plate and the composite material together; The semiconductor element is connected to the composite material via the base plate.

6. The semiconductor device according to claim 4.

7. The graphite contained in the composite material has a layered structure and transfers heat in the one direction. The semiconductor device according to claim 1 .

8. The composite material includes copper. The semiconductor device according to claim 1 .

9. a housing that houses the semiconductor device and the composite material; Furthermore, The housing contacts the mounting surface. The semiconductor device according to claim 1 .

10. The composite material divides the space contained in the housing in the one direction. The semiconductor device according to claim 9 .

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