Semiconductor storage device

Abstract

To provide a semiconductor storage device of an embodiment capable of improving heat dissipation.SOLUTION: A semiconductor storage device of one embodiment comprises a first substrate, a mold resin 15, and a plurality of memory chips. The first substrate includes a first surface and a second surface located on the opposite side of the first surface. The mold resin covers the first surface when viewed from a thickness direction Z of the first substrate. The memory chips are arranged between the first surface and the mold resin. The first substrate includes a plurality of terminals 41 provided on the second surface and exposed to the outside. Each terminal 41 includes a first non-planar portion 50 in which a first recess 61 and a first protrusion 62 are arranged alternately, the non-planar portion having at least one of a plurality of depressions 51 and a plurality of projections.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor memory device. [Background technology]

[0002] 2. Description of the Related Art A semiconductor memory device is known that has a substrate, a memory chip mounted on a first surface of the substrate, and a plurality of terminals provided on a second surface of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2022 / 0059493 Summary of the Invention [Problem to be solved by the invention]

[0004] One embodiment provides a semiconductor memory device that can improve heat dissipation. [Means for solving the problem]

[0005] In one embodiment, the semiconductor memory device includes a first substrate, a molding resin, and a memory chip. The first substrate has a first surface and a second surface located opposite the first surface. The molding resin covers the first surface when viewed in the thickness direction of the first substrate. The memory chip is disposed between the first surface and the molding resin. The first substrate includes a terminal provided on the second surface and exposed to the outside. The terminal has a first non-flat portion having at least one of a plurality of recesses and a plurality of protrusions, with first recesses and first protrusions arranged alternately. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a diagram showing a semiconductor memory device according to a first embodiment. [Figure 2] 1 is a cross-sectional view showing a semiconductor memory device according to a first embodiment. [Figure 3] FIG. 2 is a cross-sectional view of the semiconductor memory device shown in FIG. 1 taken along line F3-F3. [Figure 4] FIG. 2 is a perspective view showing a terminal of the semiconductor memory device according to the first embodiment. [Figure 5] FIG. 2 is a diagram showing terminals of the semiconductor memory device according to the first embodiment. [Figure 6] FIG. 2 is a plan view showing a board of the host device according to the first embodiment. [Figure 7] FIG. 2 is a perspective view showing a first state when the semiconductor memory device according to the first embodiment is attached. [Figure 8] FIG. 10 is a perspective view showing a second state when the semiconductor memory device according to the first embodiment is attached. [Figure 9] FIG. 10 is a perspective view showing a third state when the semiconductor memory device according to the first embodiment is attached. [Figure 10] 3A to 3C are cross-sectional views showing a method for manufacturing the semiconductor memory device according to the first embodiment. [Figure 11] 3A to 3C are cross-sectional views showing a method for manufacturing the semiconductor memory device according to the first embodiment. [Figure 12] 3A to 3C are cross-sectional views showing a method for manufacturing the semiconductor memory device according to the first embodiment. [Figure 13] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a first modified example of the first embodiment. [Figure 14] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a second modification of the first embodiment. [Figure 15] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a second modification of the first embodiment. [Figure 16] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a third modified example of the first embodiment. [Figure 17] FIG. 10 is a perspective view showing a terminal of a semiconductor memory device according to a second embodiment. [Figure 18] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a second embodiment. [Figure 19] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a first modified example of the second embodiment. [Figure 20] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a second modification of the second embodiment. [Figure 21]FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a second modification of the second embodiment. [Figure 22] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a third modification of the second embodiment. [Figure 23] FIG. 10 is a diagram showing terminals of a semiconductor memory device according to a fourth modification of the second embodiment. [Figure 24] FIG. 11 is a diagram showing terminals of a semiconductor memory device according to a fifth modified example of the second embodiment. [Figure 25] FIG. 13 is a diagram showing terminals of a semiconductor memory device according to a sixth modified example of the second embodiment. [Figure 26] FIG. 13 is a diagram showing terminals of a semiconductor memory device according to a seventh modification of the second embodiment. [Figure 27] FIG. 13 is a diagram showing terminals of a semiconductor memory device according to an eighth modification of the second embodiment. [Figure 28] FIG. 13 is a diagram showing terminals of a semiconductor memory device according to a ninth modification of the second embodiment. [Figure 29] FIG. 23 is a diagram showing terminals of a semiconductor memory device according to a tenth modification of the second embodiment. [Figure 30] FIG. 10 is a diagram showing a semiconductor memory device according to a third embodiment. [Figure 31] FIG. 10 is a diagram showing a semiconductor memory device according to a third embodiment. [Figure 32] FIG. 10 is a diagram showing a semiconductor memory device according to a fourth embodiment. [Figure 33] FIG. 10 is a diagram showing a semiconductor memory device according to a modification of the first to fourth embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, a semiconductor memory device according to an embodiment will be described with reference to the drawings. In the following description, components having the same or similar functions will be assigned the same reference numerals. Further, duplicate descriptions of those components may be omitted. In the following description, reference numerals with a distinguishing number or letter at the end may have the number or letter at the end omitted if they do not need to be distinguished from each other.

[0008] In this application, terms are defined as follows: "Parallel," "orthogonal," or "same" may include "substantially parallel," "substantially orthogonal," or "substantially the same," respectively. "Connection" is not limited to mechanical connection, but may also include electrical connection. That is, "connection" is not limited to direct connection between two elements to be connected, but may include connection between two elements via another element interposed therebetween. Furthermore, "connection" is not limited to coupling, but may include simple contact.

[0009] The X direction, Y direction, and Z direction are defined as follows. The X direction and Y direction are directions along a first surface 11a (see FIG. 2) of the substrate 11, which will be described later. The X direction is a direction from a region A1 to a region A2, which will be described later (see FIG. 1). The Y direction is a direction that intersects (for example, is perpendicular to) the X direction. The Z direction is a direction that intersects (for example, is perpendicular to) the X direction and the Y direction. The Z direction is, for example, the thickness direction of the substrate 11. The X direction is an example of a "first direction." The Y direction is an example of a "second direction."

[0010] In addition, in each of the figures described below, the content of the part accompanied by the letters "bb cross section" indicates a cross section along the bb line shown in (a) of the figure, and the content of the part accompanied by the letters "cc cross section" indicates a cross section along the cc line shown in (a) of the figure.

[0011] (First embodiment) <1. External configuration of semiconductor memory device> FIG. 1 is a diagram showing a semiconductor memory device 10 according to a first embodiment. (a) in FIG. 1 shows one surface of the semiconductor memory device 10. (b) in FIG. 1 shows one side of the semiconductor memory device 10. (c) in FIG. 1 shows the other surface of the semiconductor memory device 10.

[0012] The semiconductor memory device 10 is, for example, a semiconductor memory device such as an SSD (Solid State Drive). The semiconductor memory device 10 has, for example, a SiP (System in Package) structure. The semiconductor memory device 10 is attached to a host device and used as a storage device for the host device. The host device may be, but is not limited to, a personal computer, a mobile device, a video recorder, or an in-vehicle device. An example in which the semiconductor memory device 10 is attached to a host device HS (see FIG. 6) will be described below.

[0013] The semiconductor memory device 10 is, for example, a card-type semiconductor memory device such as a memory card. For example, the semiconductor memory device 10 has a length L in the X direction, a width W in the Y direction, and a thickness T in the Z direction. The length L is greater than the width W. An example of the length L is 18 mm±0.10 mm. An example of the width W is 14 mm±0.10 mm. An example of the thickness T is 1.4 mm±0.10 mm. However, the above specifications and numerical values ​​do not limit the content of this embodiment.

[0014] As shown in FIG. 1, the semiconductor memory device 10 has a first main surface 10sa, a second main surface 10sb, a first end face 10sc, a second end face 10sd, a first side face 10se, and a second side face 10sf.

[0015] The first main surface 10sa and the second main surface 10sb are the widest of the six surfaces. The second main surface 10sb is located on the opposite side of the first main surface 10sa. The first main surface 10sa and the second main surface 10sb are spaced apart in the Z direction and extend in the X and Y directions. A plurality of terminals 41, which will be described later, are provided on the second main surface 10sb. The plurality of terminals 41 are exposed to the outside at the second main surface 10sb.

[0016] The first end surface 10sc and the second end surface 10sd are spaced apart in the X direction and extend in the Y and Z directions. The first end surface 10sc connects one end of the first main surface 10sa in the X direction to one end of the second main surface 10sb in the X direction. The second end surface 10sd connects the other end of the first main surface 10sa in the X direction to the other end of the second main surface 10sb in the X direction.

[0017] The first side surface 10se and the second side surface 10sf are spaced apart in the Y direction and extend in the X and Z directions. The first side surface 10se connects one end of the first main surface 10sa in the Y direction to one end of the second main surface 10sb in the Y direction. The second side surface 10sf connects the other end of the first main surface 10sa in the Y direction to the other end of the second main surface 10sb in the Y direction.

[0018] In this embodiment, the semiconductor memory device 10 includes regions A1 to A3. Region A1 is arranged between a center C1 in the X direction of the semiconductor memory device 10 and a first end face 10sc. A plurality of terminals 41A are arranged in region A1 as the terminals 41. The plurality of terminals 41A are arranged in a line in the Y direction. Region A2 is arranged between region A1 and the center C1 in the X direction of the semiconductor memory device 10. A plurality of terminals 41B are arranged in region A2 as the terminals 41. The plurality of terminals 41B are arranged in a line in the Y direction. Region A3 is arranged between the center C1 in the X direction of the semiconductor memory device 10 and a second end face 10sd. A plurality of terminals 41C are arranged in region A3 as the terminals 41. The plurality of terminals 41C are arranged in a line in the Y direction.

[0019] <2. Internal structure of semiconductor memory device> Next, the internal configuration of the semiconductor memory device 10 will be described. 2 is a cross-sectional view showing the semiconductor memory device 10. The semiconductor memory device 10 includes, for example, a substrate 11, one or more (e.g., a plurality of) memory chips 12, a controller 13, one or more (e.g., a plurality of) electronic components 14, and a mold resin 15.

[0020] <2.1 Circuit board> The substrate 11 is a printed circuit board. The substrate 11 is plate-shaped and extends in the X and Y directions. The substrate 11 is an example of a "first substrate." The substrate 11 has a first surface 11a and a second surface 11b. The first surface 11a and the second surface 11b are spaced apart in the Z direction and extend in the X and Y directions. The first surface 11a is the surface that is covered with the mold resin 15 when viewed from the Z direction. The second surface 11b is the surface located on the opposite side to the first surface 11a. The second surface 11b is exposed to the outside of the semiconductor memory device 10. The second surface 11b forms a second main surface 10sb of the semiconductor memory device 10.

[0021] 2.2 Memory chip The memory chip 12 is a semiconductor memory chip that stores data in a nonvolatile manner. The memory chip 12 is, for example, a NAND flash memory. However, the "semiconductor memory" is not limited to a NAND flash memory, and may be other types of memory such as a NOR memory, a Magnetoresistive Random Access Memory (MRAM), or a resistive memory. The memory chip 12 generates heat when the semiconductor storage device 10 is in use.

[0022] The memory chip 12 is disposed between the first surface 11a of the substrate 11 and the mold resin 15. The multiple memory chips 12 are, for example, stacked on one another and mounted on the first surface 11a of the substrate 11. Note that instead of being mounted on the first surface 11a of the substrate 11, the memory chips 12 may be stacked above the controller 13 from the side opposite to the substrate 11. The multiple memory chips 12 are, for example, electrically connected to the first surface 11a of the substrate 11 via bonding wires BW.

[0023] <2.3 Controller> The controller 13 is a control component mounted on the substrate 11. The controller 13 performs overall control of the semiconductor memory device 10. The controller 13 controls write and read operations for the multiple memory chips 12. The controller 13 is, for example, a controller chip in which control functional units are integrated on a single semiconductor chip. The controller 13 is, for example, a semiconductor package including an SoC (System on a Chip) in which a host interface circuit for communicating with a host device, a control circuit for controlling the multiple memory chips 12, and a control circuit for controlling a DRAM (not shown) are integrated on a single semiconductor chip. The controller 13 is disposed between the first surface 11a of the substrate 11 and the mold resin 15. The controller 13 is mounted on, for example, the first surface 11a of the substrate 11. The controller 13 generates heat when the semiconductor memory device 10 is in use.

[0024] 2.4 Electronic Components The electronic component 14 is mounted on the first surface 11a of the substrate 11. The electronic component 14 is a capacitor, a resistor, or the like.

[0025] <2.5 Mold resin> The mold resin 15 is a sealing member provided on the first surface 11a of the substrate 11. The mold resin 15 is made of an insulating material. The mold resin 15 seals, for example, the memory chips 12, the controller 13, and the electronic components 14 together.

[0026] The molding resin 15 includes a first surface 15a and a second surface 15b. The first surface 15a contacts the first surface 11a of the substrate 11. The second surface 15b is located on the opposite side to the first surface 15a. The second surface 15b extends along the X and Y directions. The second surface 15b forms a first main surface 10sa of the semiconductor memory device 10.

[0027] <3. Circuit board configuration> Next, the configuration of the substrate 11 will be described. 2, the substrate 11 is, for example, a multilayer circuit board. The substrate 11 includes an insulating base material 21 and a wiring pattern 22.

[0028] The insulating substrate 21 is an insulating substrate that forms the base of the substrate 11. The insulating substrate 21 is made of a hard insulating material such as a glass epoxy material. However, the material of the insulating substrate 21 is not limited to the above example. The insulating substrate 21 may also be made of a paper phenol material, a composite material, a fluorine-based resin material, a polyimide material, or the like.

[0029] In this embodiment, the insulating base material 21 includes a core material 21A and a prepreg 21B laminated on the core material 21A. The prepreg 21B is located on the second surface 11b side of the core material 21A. The substrate 11 is not limited to a multilayer circuit board and may be a double-sided board. That is, the insulating base material 21 may be formed only by the core material 21A without including the prepreg 21B. Therefore, in the following description, the term "insulating base material 21" may be read as the "core material 21A," and the term "surface 21s of the insulating base material 21" may be read as the "surface 21s of the core material 21A."

[0030] The wiring pattern 22 is a conductive portion provided on the substrate 11. The wiring pattern 22 includes wiring 22L provided inside the insulating base material 21 and / or on the surface of the substrate 11. The wiring pattern 22 is formed of a metal material such as copper.

[0031] <4. Composition of the surface layer of the substrate> Next, the surface layer 30 of the substrate 11 will be described. 3 is a cross-sectional view of the semiconductor memory device 10 taken along line F3-F3 in FIG. 1. For ease of explanation, FIG. 3 shows the shape of the terminals 41 (the number of recesses 61 and protrusions 62, which will be described later) in a schematic manner. As shown in FIG. 3, the substrate 11 has a surface layer 30. The surface layer 30 is a portion that is laminated on the insulating base material 21 and forms the second surface 11b of the substrate 11. The surface layer 30 includes a conductive pattern 31 and a solder resist layer 32.

[0032] The conductive pattern 31 is a conductive portion included in the surface layer portion 30 as part of the wiring pattern 22. The conductive pattern 31 has a plurality of terminals 41 (only one is shown in FIG. 3) and a plurality of wirings .

[0033] (Terminal) The multiple terminals 41 are terminals exposed to the outside of the semiconductor memory device 10 to be electrically connected to the host device HS. Each terminal 41 is, for example, a pad that comes into contact with a contact pin 92 (see FIG. 6) of the host device HS. The multiple terminals 41 are, for example, provided on the surface 21s of the insulating substrate 21. Each terminal 41 is exposed to the outside of the semiconductor memory device 10 through an opening 32h in the solder resist layer 32. Each of the multiple terminals 41 is, for example, a signal terminal, a power terminal, or a ground terminal. Note that some of the multiple terminals 41 may be test terminals.

[0034] Each terminal 41 includes a main body 45 and a protective film 46. The main body 45 is formed of a metal material (first metal material) such as copper. The protective film 46 is laminated on the main body 45 from the side opposite the insulating substrate 21. The protective film 46 is, for example, a plated layer provided for rust prevention. The protective film 46 is, for example, formed of a metal material such as gold or nickel.

[0035] In this embodiment, the protective film 46 includes, for example, a first metal film 46a and a second metal film 46b. The first metal film 46a is laminated on the main body portion 45. The first metal film 46a is formed of, for example, a metal material (second metal material) such as nickel. The second metal material is a metal material that has superior adhesion to the first metal material (for example, copper) compared to a third metal material described below. The second metal material is, for example, nickel, titanium, tantalum, titanium nitride, tungsten, or tungsten nitride.

[0036] The second metal film 46b is stacked on the first metal film 46a from the side opposite to the main body portion 45. The second metal film 46b is exposed to the outside of the semiconductor memory device 10. The second metal film 46b is made of a metal material (third metal material) such as gold.

[0037] (wiring) The plurality of wirings 42 are wirings included in the surface layer portion 30 as part of the wirings 22L. The plurality of wirings 42 are provided on the surface 21s of the insulating base material 21. At least some of the plurality of wirings 42 are electrically connected to the terminals 41.

[0038] <4.2 Solder resist layer> The solder resist layer 32 is an insulating protective layer that protects the conductive pattern 31. The solder resist layer 32 is an example of an "insulating layer." The solder resist layer 32 is provided, for example, on the surface 21s of the insulating base material. The solder resist layer 32 has openings 32h that expose the terminals 41, and covers a portion of the conductive pattern 31. For example, the solder resist layer 32 covers a plurality of wirings 42.

[0039] <5. Terminal shape> Next, the shape of the terminal 41 of the semiconductor memory device 10 will be described. 4 is a perspective view showing a terminal 41 of the semiconductor memory device 10. In this embodiment, the terminal 41 has a non-planar portion 50. The non-planar portion 50 is an example of a "first non-planar portion."

[0040] In this embodiment, the non-flat portion 50 has a plurality of recesses 51. In the example shown in FIG. 4 , the recesses 51 are arranged in a matrix of 10 columns in the X direction and 7 columns in the Y direction. The recesses 51 are bottomed holes provided on the surface of the terminal 41. In this embodiment, the provision of the plurality of recesses 51 causes the non-flat portion 50 to have an uneven structure in which recesses 61 and protrusions 62 are alternately arranged. For example, the recesses 61 and protrusions 62 are alternately arranged in both the X direction and the Y direction. The recesses 61 are an example of a "first recess." The protrusions 62 are an example of a "first protrusion." Note that, in this application, "alternately arranged recesses and protrusions" means that the total number of recesses and protrusions may be three or more. For example, an uneven structure consisting of only two recesses and one protrusion defined therebetween, or an uneven structure consisting of only two protrusions and one recess defined therebetween, are also examples of the "structure in which recesses and protrusions are alternately arranged" in this application. The non-flat portion 50 does not need to be provided over the entire area of ​​the terminal 41, and may be provided over only a partial area of ​​the terminal 41.

[0041] <5.1 Shape of the recess> FIG. 5 is a diagram illustrating a terminal 41 of the semiconductor memory device 10. The recess 61 is formed by a dent 51. In other words, "recess 61" may be read as "recess 51." The recesses 61 are arranged at equal intervals P1 in the X direction. The width of the recesses 61 in the X direction is, for example, equal to or greater than the interval P1. The recesses 61 are also arranged at equal intervals P2 in the Y direction. The width of the recesses 61 in the Y direction is, for example, equal to or greater than the interval P2. The recesses 61 are polygonal when viewed from the Z direction. In this embodiment, the recess 61 is quadrangular when viewed from the Z direction. However, the recess 61 may be triangular or polygonal with pentagons or more, linear, or circular. The depth of the recess 61 is, for example, 1 μm or greater. In this embodiment, the depth of the recess 61 is several μm to several tens of μm. The widths of the recesses 61 in the X and Y directions are, for example, 1 μm or greater. In this embodiment, the width of each of the recesses 61 in the X and Y directions is several μm to several hundred μm.

[0042] <5.2 Shape of the convex part> The protrusion 62 is a portion defined between two adjacent recesses 61 by providing a plurality of recesses 61. In this application, the term "protrusion" refers to a portion that protrudes in a direction away from the insulating substrate 21 compared to the bottom of the recess. In this embodiment, the protrusion 62 is defined between two recesses 61 that are adjacent to each other in the X direction or the Y direction.

[0043] In this embodiment, the protrusions 62 extend in a direction parallel to the second surface 11b of the substrate 11. For example, the protrusions 62 extend linearly in the X direction or the Y direction. For example, the multiple protrusions 62 include nine protrusions 62 that are spaced apart from one another in the X direction and extend in the Y direction, and six protrusions 62 that are spaced apart from one another in the Y direction and extend in the X direction. Each of the nine protrusions 62 extends across more than half the width of the terminal 41 in the Y direction. Each of the six protrusions 62 extends across more than half the width of the terminal 41 in the X direction. At each of the intersections between the nine protrusions 62 and the six protrusions 62, a connection portion is formed where the protrusions 62 extending in the X direction and the protrusions 62 extending in the Y direction are connected in a cross shape.

[0044] In this embodiment, a contact pin 92 of a connector 90 of a host device HS (described later) has an extending portion 92a and a curved portion 92b. The extending portion 92a extends linearly so as to gradually approach the terminal 41. The extending portion 92a extends in the X direction. The curved portion 92b is provided at the tip of the contact pin 92. The curved portion 92b curves toward the opposite side from the terminal 41. The curved portion 92b is a contact portion of the contact pin 92. In this embodiment, the convex portion 62 of the terminal 41 contacts the curved portion 92b of the contact pin 92. That is, a contact portion CP between the terminal 41 and the contact pin 92 is formed between the convex portion 62 and the curved portion 92b of the contact pin 92. This electrically connects the terminal 41 and the host device HS.

[0045] <6. Thermally conductive sheets> Next, returning to FIG. 1 , the thermally conductive sheet 70 will be described. The thermally conductive sheet 70 is, for example, a sheet having higher thermal conductivity than the solder resist layer 32. The thermally conductive sheet 70 has, for example, a thermal conductivity of 1.0 W / (m·K) or more. The thermally conductive sheet 70 is formed of, for example, silicone. When viewed from the Z direction, the thermally conductive sheet 70 is disposed so as to overlap a flat region of the semiconductor memory device 10 located between the region A2 and the region A3, and is in contact with the second main surface 10sb of the semiconductor memory device 10. Note that the thermally conductive sheet 70 does not need to be fixed to the semiconductor memory device 10, and may simply be in contact with the semiconductor memory device 10.

[0046] <7. Host device connector> Next, the connector 90 of the host device HS will be described. FIG. 6 is a plan view showing a substrate 80 of the host device HS. For ease of explanation, the substrate 80 of the host device HS will be referred to as the "host substrate 80" below. The host substrate 80 is an example of a "second substrate." The host substrate 80 has a socket-type connector 90 (e.g., a clamshell-type socket). The semiconductor memory device 10 can be manually attached and detached to the connector 90. For example, the semiconductor memory device 10 can be removed from the connector 90 in the event of a malfunction, and can be easily replaced. The connector 90 has, for example, a connector body 91, a plurality of contact pins 92, and a holder 93 (see FIG. 7).

[0047] (connector body) The connector body 91 is a portion that forms the main portion of the outer shape of the connector 90. The connector body 91 is fixed to the host substrate 80. The connector body 91 is electrically connected to the host substrate 80. The connector body 91 includes an accommodation section S that can accommodate the semiconductor memory device 10. The connector body 91 is open on one side in the X direction, for example, and includes a wall portion 91a that surrounds the accommodation section S from three directions.

[0048] (contact pin) The multiple contact pins 92 are terminals provided on the connector 90 to be connected to the multiple terminals 41 of the semiconductor memory device 10. The multiple contact pins 92 are arranged in the accommodation section S and exposed to the outside of the connector body 91. The multiple contact pins 92 are arranged at positions corresponding one-to-one to the multiple terminals 41 of the semiconductor memory device 10. Each contact pin 92 extends in the X direction. Each contact pin 92 is a pin-type terminal having a shape elongated in the X direction.

[0049] The base end of each contact pin 92 is connected to and supported by the connector body 91. Each contact pin 92 is electrically connected to the host substrate 80 via the connector body 91. The tip end (the curved portion 92b described above) of each contact pin 92 is located at a height above the host substrate 80 (see FIG. 7). Each contact pin 92 is disposed at an angle with respect to the surface of the host substrate 80 so that the tip end of each contact pin 92 is farther from the host substrate 80 than the base end. Each contact pin 92 is made of metal and is elastically deformable. In this embodiment, when the semiconductor memory device 10 is attached to the connector 90, the tip end of each contact pin 92 is pressed toward the host substrate 80 by the semiconductor memory device 10. This causes each contact pin 92 to elastically deform. As a result, the restoring force of the elastic deformation causes the tip end of each contact pin 92 to come into close contact with the terminal 41 of the semiconductor memory device 10.

[0050] 7 is a perspective view showing a first state when the semiconductor memory device 10 is attached. The holder 93 is a portion that holds the semiconductor memory device 10 when the semiconductor memory device 10 is attached to the connector 90. The holder 93 is rotatably connected to the connector main body 91. The holder 93 has, for example, a base end portion 93a, a first support portion 93b1, and a second support portion 93b2.

[0051] The base end portion 93a has a hinge structure and is rotatably connected to an end portion of the connector main body 91. The first support portion 93b1 and the second support portion 93b2 are spaced apart in the Y direction and extend in a direction away from the base end portion 93a.

[0052] The first support portion 93b1 has a first portion 94a1 (see FIG. 8) along the first main surface 10sa of the semiconductor memory device 10, a second portion 94b1 along the first side surface 10se of the semiconductor memory device 10, and a third portion 94c1 that overlaps the second main surface 10sb of the semiconductor memory device 10. Similarly, the second support portion 93b2 has a first portion 94a2 (see FIG. 8) along the first main surface 10sa of the semiconductor memory device 10, a second portion 94b2 along the second side surface 10sf of the semiconductor memory device 10, and a third portion 94c2 that overlaps the second main surface 10sb of the semiconductor memory device 10. The semiconductor memory device 10 is attached to the holder 93 by being inserted between the first support portion 93b1 and the second support portion 93b2.

[0053] 8 is a perspective view showing a second state when the semiconductor memory device 10 is attached. The second state shows a state in which the holder 93 has been rotated from the first state toward the host substrate 80. FIG. 9 is a perspective view showing a third state when the semiconductor memory device 10 is attached. The third state is a state in which the holder 93 has been further rotated from the second state toward the host substrate 80, and the semiconductor memory device 10 is accommodated in the accommodation section S (see FIG. 8) of the connector main body 91.

[0054] As a result, after the semiconductor memory device 10 is attached to the holder 93, the holder 93 is rotated toward the host substrate 80, so that the semiconductor memory device 10 is removably attached to the connector 90 with the terminals 41 of the semiconductor memory device 10 and the contact pins 92 of the connector 90 in contact with each other.

[0055] <8. Manufacturing method> Next, a method for manufacturing the semiconductor memory device 10 will be described. 10 to 12 are cross-sectional views showing a manufacturing method of the semiconductor memory device 10. Note that the shape of the terminal 41 (the number of recesses 61 and protrusions 62) is shown schematically in Fig. 10 to 12.

[0056] 10(a), a surface layer portion 30A is formed on the insulating base material 21. The surface layer portion 30A includes a conductive pattern 31A provided on the insulating base material 21 and a solder resist layer 32A that covers the entire conductive pattern 31A. The conductive pattern 31A includes a main body portion 45 of the terminal 41 and a plurality of wirings 42.

[0057] Next, as shown in FIG. 10(b), a mask M1 is formed on the solder resist layer 32A. When viewed from the Z direction, the mask M1 has openings M1h at positions corresponding to the openings 32h of the solder resist layer 32 to be formed in a later process, and has cover portions M1a at positions corresponding to the plurality of recesses 51 to be formed in a later process. Next, as shown in FIG. 10(c), etching is performed using the mask M1 to remove a portion of the solder resist layer 32A. This forms the solder resist layer 32 having the openings 32h, and also forms cover portions 32Aa at positions corresponding to the plurality of recesses 51 to be formed in a later process. As a result, the portions of the main body portion 45 of the terminal 41 that are not covered by the cover portions 32Aa are exposed to the outside through the openings 32h.

[0058] Next, as shown in FIG. 10(d), a mask M2 is formed on the solder resist layer 32, for example, by dry film lamination. The mask M2 is provided on the entire solder resist layer 32 except for the openings 32h. The mask M2 has openings M2h at positions corresponding to the openings 32h in the solder resist layer 32. Next, as shown in FIG. 10(e), a plating process is performed through the openings M2h in the mask M2. As a result, a first plating layer 101 is formed on the portions of the main body 45 of the terminal 41 that are not covered by the cover portion 32Aa. The first plating layer 101 is formed, for example, from the second metal material described above.

[0059] Next, as shown in Fig. 11(f), the mask M2 is removed. Next, as shown in Fig. 11(g), a mask M3 is formed on the solder resist layer 32. When viewed from the Z direction, the mask M3 has openings M3h at positions corresponding to the openings 32h of the solder resist layer 32. Next, as shown in Fig. 11(h), etching is performed using the mask M3, thereby removing the cover portion 32Aa.

[0060] Next, as shown in FIG. 11(i), a mask M4 is formed on the solder resist layer 32 by, for example, dry film lamination. The mask M4 is provided on the entire solder resist layer 32 except for the openings 32h. The mask M4 has openings M4h at positions corresponding to the openings 32h of the solder resist layer 32. Next, as shown in FIG. 11(j), a plating process is performed through the openings M4h of the mask M4. As a result, a second plating layer 102 is formed on the entire terminal 41. The second plating layer 102 is formed, for example, from the second metal material described above. The material of the second plating layer 102 is, for example, the same as the material of the first plating layer 101. In this case, no visible boundary remains between the first plating layer 101 and the second plating layer 102. In this embodiment, the first plating layer 101 and the second plating layer 102 form the first metal film 46a of the protective film 46.

[0061] Next, as shown in FIG. 12(k), a plating process using a third metal material is performed through the opening M4h of the mask M4. As a result, a third plating layer 103 is formed over the entire area of ​​the terminal 41. The third plating layer 103 forms the second metal film 46b of the protective film 46. As a result, the terminal 41 is formed. In this embodiment, the portion of the opening 32h of the solder resist layer 32 where the first plating layer 101 is not provided is formed as a recess 61 (depression 51). Next, as shown in FIG. 12(l), the fourth mask M4 is removed. This completes the series of processes related to the manufacture of the semiconductor memory device 10.

[0062] <9. Advantages> In this embodiment, the terminal 41 of the semiconductor memory device 10 has a non-flat portion 50 having a plurality of depressions 51, with concave portions 61 and convex portions 62 arranged alternately. With this configuration, the surface area (heat dissipation area) of the terminal 41 can be increased, thereby improving the heat dissipation performance of the semiconductor memory device 10.

[0063] In this embodiment, the semiconductor memory device 10 can be detachably attached to the connector 90 with the contact pins 92 of the connector 90 in contact with the terminals 41. With this configuration, the terminals 41 to which the contact pins 92 are connected can be used to improve the heat dissipation performance of the semiconductor memory device 10.

[0064] (First Modification of the First Embodiment) Next, a first modified example of the first embodiment will be described. The first modified example differs from the first embodiment in that a flat portion 111 is provided in the area of ​​the terminal 41 that overlaps with the curved portion 92b of the contact pin 92. Note that the configuration other than that described below is the same as the configuration of the first embodiment.

[0065] 13 is a diagram showing a terminal 41 of a first modified example of the first embodiment. In this modified example, the terminal 41 has a first region R1 and a second region R2.

[0066] When viewed from the Z direction, the first region R1 is a region at least partially overlapping with the curved portion 92b of the contact pin 92. The width of the first region R1 in the Y direction is greater than the width of the curved portion 92b of the contact pin 92 in the Y direction.

[0067] The second region R2 is a region of the terminal 41 that is outside the first region R1. For example, the second region R2 is a region that does not overlap the curved portion 92b of the contact pin 92 compared to the first region R1 when viewed from the Z direction. The second region R2 is a region located between the first region R1 and the ends of the terminal 41 in the X direction and the Y direction. The second region R2 is, for example, a frame-shaped region that surrounds the first region R1.

[0068] In this modification, the second region R2 has the above-described non-flat portion 50. That is, the second region R2 has a plurality of depressions 51 provided therein, thereby having an uneven structure in which recesses 61 and protrusions 62 are arranged alternately.

[0069] On the other hand, the first region R1 does not have a non-flat portion 50. The first region R1 has a flat portion 111 that is flatter than the non-flat portion 50. The flat portion 111 has a flat surface along the X direction and the Y direction. In this embodiment, the flat portion 111 is provided, for example, over the entire first region R1. The width of the flat portion 111 in the Y direction is greater than the width of the protrusion 62 in the Y direction. The width of the flat portion 111 in the Y direction is greater than the width of the curved portion 92b of the contact pin 92. The width of the contact portion CP between the terminal 41 and the contact pin 92 in the Y direction is the same as the width of the curved portion 92b of the contact pin 92 in the Y direction.

[0070] With this configuration, the contact area CP between the terminal 41 and the contact pin 92 can be made larger than in the first embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0071] (Second Modification of the First Embodiment) Next, a second modified example of the first embodiment will be described. The second modified example differs from the first modified example in that a non-flat portion 120 is provided in the area of ​​the terminal 41 that overlaps with the curved portion 92b of the contact pin 92. Note that the configuration other than that described below is the same as that of the first embodiment.

[0072] FIG. 14 is a diagram showing a terminal 41 according to a second modification of the first embodiment. In this modification, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the non-flat portion 50 described above. That is, the second region R2 has a concave-convex structure in which recesses 61 and protrusions 62 are alternately arranged due to the provision of a plurality of depressions 51. On the other hand, the first region R1 has a non-flat portion 120. The non-flat portion 120 is an example of a "second non-flat portion."

[0073] In this modified example, the non-flat portion 120 has a plurality of depressions 121. In the example shown in FIG. 14, three depressions 121 are arranged side by side in the X direction. When viewed from the Z direction, each depression 121 has a rectangular shape extending linearly in the Y direction. The width of the depression 121 in the Y direction is greater than the width of the depression 121 in the X direction. The depression 121 is a bottomed hole provided in the surface of the terminal 41. In this modified example, by providing a plurality of depressions 121, the first region R1 has an uneven structure in which depressions 131 and protrusions 132 are arranged alternately. The depressions 131 and protrusions 132 are arranged alternately in the X direction. The depressions 131 are an example of a "second depression." The protrusions 132 are an example of a "second protrusion."

[0074] (shape of recess) The recess 131 is formed by the depression 121. In other words, "recess 131" may be read as "recess 121." The multiple recesses 131 are arranged at equal intervals in the X direction. The width of the recess 131 in the X direction is, for example, the same as the width of the recess 61 in the X direction. The width of the recess 131 in the Y direction is, for example, larger than the width of the recess 61 in the Y direction. The width of the recess 131 in the Y direction is, for example, larger than the width of the recess 131 in the X direction. The recess 131 extends linearly in the Y direction. The width of the recess 131 in the Y direction is larger than the width of the curved portion 92b of the contact pin 92 in the Y direction.

[0075] (Shape of the convex part) The protrusion 132 is a portion defined between two adjacent recesses 131 by providing a plurality of recesses 131. In this modification, the protrusion 132 is defined between two recesses 131 adjacent to each other in the X direction. The width of the protrusion 132 in the X direction is, for example, the same as the width of the protrusion 62 in the X direction. The width of the protrusion 132 in the Y direction is, for example, larger than the width of the protrusion 62 in the Y direction. The width of the protrusion 132 in the Y direction is larger than the width of the protrusion 132 in the X direction. The protrusion 132 extends linearly in the Y direction. The width of the protrusion 132 in the Y direction is larger than the width of the curved portion 92b of the contact pin 92 in the Y direction. In this modification, the curved portion 92b of the contact pin 92 contacts the protrusion 132 at the terminal 41. The width of the contact portion CP between the terminal 41 and the contact pin 92 in the Y direction is the same as the width of the curved portion 92b of the contact pin 92 in the Y direction.

[0076] According to this aspect, the contact area CP between the terminal 41 and the contact pin 92 can be made larger than in the first embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0077] In the second modified example, a part of the curved portion 92b of the contact pin 92 may fit into the recess 131. The following describes an embodiment in which a part of the curved portion 92b of the contact pin 92 fits into the recess 131.

[0078] FIG. 15 is a diagram showing a terminal 41 according to a second modified example of the first embodiment. In the example shown in FIG. 15, in this modified example, a portion of the curved portion 92b of the contact pin 92 fits into one recess 131. Hereinafter, the recess 131 into which a portion of the curved portion 92b fits will be referred to as a "recess 131S." In this case, one contact portion CP (first contact portion CP1) is formed at the boundary between the recess 131S and the protrusion 132 adjacent to the recess 131S on one side in the X direction. In addition, another contact portion CP (second contact portion CP2) is formed at the boundary between the recess 131S and the protrusion 132 adjacent to the recess 131S on the other side in the X direction.

[0079] According to this aspect, the number of contact portions CP between the terminals 41 and the contact pins 92 can be increased compared to the first embodiment. This makes it easier for heat to be transferred from the terminals 41 to the contact pins 92. This further improves heat dissipation. In addition, the contact resistance between the terminals 41 and the contact pins 92 is reduced, further stabilizing the electrical connection between the terminals 41 and the contact pins 92.

[0080] (Third Modification of the First Embodiment) Next, a third modified example of the first embodiment will be described. The third modified example differs from the second modified example of the first embodiment in that an inclined portion 141 is provided on the periphery of the recess 131. Note that the configuration other than that described below is the same as the configuration of the second modified example of the first embodiment.

[0081] FIG. 16 is a diagram showing a terminal 41 according to a third modified example of the first embodiment. In this modified example, the terminal 41 has a first region R1 and a second region R2. The first region R1 has the non-flat portion 120 described above. That is, the first region R1 has a plurality of depressions 121, resulting in an uneven structure in which recesses 131 and protrusions 132 are alternately arranged. On the other hand, the second region R2 has the non-flat portion 50 described above. That is, the second region R2 has a plurality of depressions 51, resulting in an uneven structure in which recesses 61 and protrusions 62 are alternately arranged. A portion of the curved portion 92b of the contact pin 92 fits into one recess 131 (recess 131S).

[0082] In this modification, an inclined portion 141 is provided on the periphery (e.g., the entire periphery) of the recess 131. For example, the inclined portion 141 is provided in an annular shape along both edges of the recess 131 in the X direction and both edges of the recess 131 in the Y direction. From another perspective, the inclined portion 141 is provided on both edges of the protrusion 132 in the X direction. Note that the inclined portion 141 may be provided on one edge in the X direction of at least one protrusion 132 that contacts the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined with respect to the first surface 11a of the substrate 11. The inclined portion 141 is provided so as to round the corners of the protrusion 132. The inclined portion 141 may be a flat inclined portion or a rounded inclined portion. The curved portion 92b of the contact pin 92 contacts the inclined portion 141.

[0083] An example of a method for manufacturing the inclined portion 141 is as follows. Between the step (h) and the step (i) in FIG. 11 , the first plating layer 101 is subjected to isotropic etching (dry etching or wet etching). This forms an inclined portion on the edge of the first plating layer 101. Thereafter, the second plating layer 102 and the third plating layer 103 are formed on the first plating layer 101 with the inclined portion formed thereon by the steps described in the first embodiment. This forms the inclined portion 141 on the periphery (e.g., the entire periphery) of the recess 131, following the inclined portion formed in the first plating layer 101.

[0084] With this configuration, the size of the contact portion CP between the terminal 41 and the contact pin 92 can be increased compared to the first embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0085] (Second embodiment) Next, a second embodiment will be described. The second embodiment differs from the first embodiment in that a plurality of protrusions 151 are provided instead of a plurality of recesses 51. Note that the configuration other than that described below is the same as the configuration of the first embodiment.

[0086] 17 is a perspective view showing a terminal 41 of the semiconductor memory device 10 of the second embodiment. As shown in Fig. 17, the terminal 41 has a non-planar portion 50A. The non-planar portion 50A is an example of a "first non-planar portion."

[0087] The non-planar portion 50A has a plurality of protrusions 151. Each protrusion 151 is a columnar protrusion protruding in the Z direction. For example, each protrusion 151 protrudes toward the outside of the semiconductor memory device 10. The plurality of protrusions 151 are arranged in a matrix of, for example, ten columns in the X direction and seven columns in the Y direction. In this embodiment, by providing the plurality of protrusions 151, the non-planar portion 50A has an uneven structure in which recesses 61A and protrusions 62A are alternately arranged. For example, the recesses 61A and the protrusions 62A are alternately arranged in both the X direction and the Y direction. The recesses 61A are an example of a "first recess." The protrusions 62A are an example of a "first protrusion." Note that the non-planar portion 50A does not need to be provided over the entire area of ​​the terminal 41, and may be provided over only a portion of the terminal 41.

[0088] (Shape of the convex part) FIG. 18 is a diagram illustrating a terminal 41 of a semiconductor memory device 10 according to the second embodiment. The protrusion 62A is formed by a protruding portion 151. In other words, in this embodiment, the "protrusion 62A" may be interpreted as the "protrusion 151." The multiple protrusions 62A are arranged at equal intervals P1 in the X direction. The width of the protrusions 62A in the X direction is, for example, equal to or greater than the interval P1. The multiple protrusions 62A are also arranged at equal intervals P2 in the Y direction. The width of the protrusions 62A in the Y direction is, for example, equal to or greater than the interval P2. The protrusions 62A are polygonal when viewed from the Z direction. For example, the protrusions 62A are quadrilateral when viewed from the Z direction. However, the protrusions 62A may be triangular or polygonal with pentagons or more, linear, or circular. The height of the protrusions 62A is, for example, 1 μm or greater. In this embodiment, the height of the protrusions 62A is several μm to several tens of μm. The width of each of the protrusions 62A in the X and Y directions is, for example, 1 μm or more. In this embodiment, the width of each of the protrusions 62A in the X and Y directions is several μm to several hundred μm. To ensure the rigidity of the protrusions 62A against contact with the contact pins 92, it is preferable that the aspect ratio of the protrusions and recesses be 1 or less.

[0089] (shape of recess) The recess 61A is a portion defined between two adjacent protrusions 62A by providing a plurality of protrusions 62A. In this application, the term "recess" refers to a portion that is recessed in a direction approaching the insulating substrate 21 compared to the tip surface of the protrusion. In this embodiment, the recess 61A is defined between two protrusions 62A that are adjacent in the X direction or the Y direction.

[0090] The recesses 61A extend linearly in, for example, the X direction or the Y direction. For example, the multiple recesses 61A include nine recesses 61A that are spaced apart from one another in the X direction and extend in the Y direction, and six recesses 61A that are spaced apart from one another in the Y direction and extend in the X direction.

[0091] According to this configuration, the alternately arranged recesses 61A and protrusions 62A can increase the surface area (heat dissipation area) of the terminals 41. This can improve the heat dissipation performance of the semiconductor memory device 10.

[0092] (First modified example of the second embodiment) Next, a first modified example of the second embodiment will be described. The first modified example differs from the second embodiment in that a flat portion 111 is provided in the area of ​​the terminal 41 that overlaps with the curved portion 92b of the contact pin 92. Note that the configuration other than that described below is the same as the configuration of the second embodiment.

[0093] 19 is a diagram showing a terminal 41 according to a first modification of the second embodiment. In this modification, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the non-flat portion 50A described above. That is, the second region R2 has a plurality of protrusions 151, resulting in an uneven structure in which recesses 61A and protrusions 62A are alternately arranged.

[0094] On the other hand, the first region R1 does not have a non-flat portion 50A. The first region R1 has a flat portion 111 that is flatter than the non-flat portion 50A. The flat portion 111 is provided, for example, over the entire first region R1. The Y-direction width of the flat portion 111 is greater than the Y-direction width of the protrusion 62A. The Y-direction width of the flat portion 111 is greater than the Y-direction width of the curved portion 92b of the contact pin 92. The Y-direction width of the contact portion CP between the terminal 41 and the contact pin 92 matches the Y-direction width of the curved portion 92b of the contact pin 92.

[0095] With this configuration, the contact area CP between the terminal 41 and the contact pin 92 can be made larger than in the second embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0096] (Second Modification of the Second Embodiment) Next, a second modified example of the second embodiment will be described. The second modified example differs from the second embodiment in that a non-flat portion 120A is provided in the area of ​​the terminal 41 that overlaps with the curved portion 92b of the contact pin 92. Note that the configuration other than that described below is the same as the configuration of the second embodiment.

[0097] FIG. 20 is a diagram showing a terminal 41 according to a second modification of the second embodiment. In this modification, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the non-flat portion 50A described above. That is, the second region R2 has a concave-convex structure in which recesses 61A and protrusions 62A are alternately arranged due to the provision of a plurality of protrusions 151. On the other hand, the first region R1 has a non-flat portion 120A. The non-flat portion 120A is an example of a "second non-flat portion."

[0098] In this modified example, the non-flat portion 120A has a plurality of protruding portions 161. In the example shown in FIG. 20, three protruding portions 161 are arranged side by side in the X direction. When viewed from the Z direction, each protruding portion 161 has a rectangular shape extending linearly in the Y direction. The width of the protruding portion 161 in the Y direction is greater than the width of the protruding portion 151 in the Y direction. The protruding height of the protruding portion 161 is the same as the protruding height of the protruding portion 151. In this modified example, by providing a plurality of protruding portions 161, the first region R1 has an uneven structure in which recessed portions 131A and protruding portions 132A are arranged alternately. The recessed portions 131A and protruding portions 132A are arranged alternately in the X direction. The recessed portions 131A are an example of a "second recessed portion." The protruding portions 132A are an example of a "second protruding portion."

[0099] (Shape of the convex part) The protrusion 132A is formed by a protruding portion 161. In other words, "protrusion 132A" may be read as "protrusion 161." The multiple protrusions 132A are arranged at equal intervals in the X direction. The width of the protrusion 132A in the X direction is, for example, the same as the width of the protrusion 62A in the X direction. The width of the protrusion 132A in the Y direction is, for example, larger than the width of the protrusion 62A in the Y direction. The width of the protrusion 132A in the Y direction is larger than the width of the protrusion 132A in the X direction. The protrusion 132A extends linearly in the Y direction. The width of the protrusion 132A in the Y direction is larger than the width of the curved portion 92b of the contact pin 92 in the Y direction. In this modification, the curved portion 92b of the contact pin 92 contacts the protrusion 132A at the terminal 41. The width in the Y direction of the contact portion CP between the terminal 41 and the contact pin 92 coincides with the width in the Y direction of the curved portion 92b of the contact pin 92.

[0100] (shape of recess) The recess 131A is a portion defined between two adjacent protrusions 132A by providing a plurality of protrusions 132A. In this modification, the recess 131A is defined between two adjacent protrusions 132A in the X direction. The width of the recess 131A in the X direction is, for example, the same as the width of the recess 61 in the X direction. The width of the recess 131A in the Y direction is, for example, larger than the width of the recess 61A in the Y direction. The width of the recess 131A in the Y direction is larger than the width of the recess 131A in the X direction. The recess 131A extends linearly in the Y direction. The width of the recess 131A in the Y direction is larger than the width of the curved portion 92b of the contact pin 92 in the Y direction.

[0101] According to this aspect, the contact area CP between the terminal 41 and the contact pin 92 can be made larger than in the second embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0102] In the second modified example, a part of the curved portion 92b of the contact pin 92 may fit into the recess 131A. The following describes an embodiment in which a part of the curved portion 92b of the contact pin 92 fits into the recess 131A.

[0103] FIG. 21 is a diagram illustrating a terminal 41 according to a second modified example of the second embodiment. In the example illustrated in FIG. 21, in this modified example, a portion of the curved portion 92b of the contact pin 92 fits into one recess 131A. Hereinafter, the recess 131A into which a portion of the curved portion 92b fits will be referred to as a "recess 131AS." In this case, one contact portion CP (first contact portion CP1) is formed at the boundary between the recess 131AS and the protrusion 132A adjacent to the recess 131AS on one side in the X direction. In addition, another contact portion CP (second contact portion CP2) is formed at the boundary between the recess 131AS and the protrusion 132A adjacent to the recess 131AS on the other side in the X direction.

[0104] According to this aspect, the number of contact portions CP between the terminals 41 and the contact pins 92 can be increased compared to the second embodiment. This makes it easier for heat to be transferred from the terminals 41 to the contact pins 92. This further improves heat dissipation. In addition, the contact resistance between the terminals 41 and the contact pins 92 is reduced, further stabilizing the electrical connection between the terminals 41 and the contact pins 92.

[0105] (Third modified example of the second embodiment) Next, a third modified example of the second embodiment will be described. The third modified example differs from the second embodiment in that an inclined portion 141 is provided on the periphery of the convex portion 62A (protrusion 151). Note that the configuration other than that described below is the same as the configuration of the second embodiment.

[0106] 22 is a diagram showing a terminal 41 according to a third modified example of the second embodiment. In this modified example, the terminal 41 has a first region R1 and a second region R2. In this modified example, the first region R1 and the second region R2 each have the non-flat portion 50A described above. That is, each of the first region R1 and the second region R2 has a plurality of protrusions 151, thereby forming an uneven structure in which recesses 61A and protrusions 62A are alternately arranged.

[0107] In this modification, an inclined portion 141 is provided on the periphery (e.g., the entire periphery) of the convex portion 62A (protrusion 151) provided in the first region R1. For example, the inclined portion 141 is provided in an annular shape along both edges of the convex portion 62A in the X direction and both edges of the convex portion 62A in the Y direction. Note that the inclined portion 141 only needs to be provided on at least one edge of the convex portion 62A in the X direction that contacts the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined with respect to the first surface 11a of the substrate 11. The inclined portion 141 is provided so as to round the corners of the convex portion 62A. The inclined portion 141 may be a flat inclined portion or a rounded inclined portion. The curved portion 92b of the contact pin 92 contacts the inclined portion 141.

[0108] With this configuration, the size of the contact portion CP between the terminal 41 and the contact pin 92 can be increased compared to the second embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0109] (Fourth Modification of the Second Embodiment) Next, a fourth modified example of the second embodiment will be described. The fourth modified example differs from the second embodiment in that an inclined portion 141 is provided on the periphery of the convex portion 132A (protrusion 161). Note that the configuration other than that described below is the same as the configuration of the second embodiment.

[0110] FIG. 23 is a diagram showing a terminal 41 according to a fourth modified example of the second embodiment. In this modified example, the terminal 41 has a first region R1 and a second region R2. In this modified example, the first region R1 has the non-flat portion 120A described above. That is, the first region R1 has a plurality of protrusions 161, resulting in an uneven structure in which recesses 131A and protrusions 132A are alternately arranged. On the other hand, the second region R2 has the non-flat portion 50A described above. That is, the second region R2 has a plurality of protrusions 151, resulting in an uneven structure in which recesses 61A and protrusions 62A are alternately arranged.

[0111] In this modification, an inclined portion 141 is provided on the periphery (e.g., the entire periphery) of the convex portion 132A (protrusion 161) provided in the first region R1. For example, the inclined portion 141 is provided in an annular shape along both edges of the convex portion 132A in the X direction and both edges of the convex portion 132A in the Y direction. Note that the inclined portion 141 may be provided on one edge in the X direction of at least one convex portion 132A that contacts the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined with respect to the first surface 11a of the substrate 11. The inclined portion 141 is provided so as to round the corners of the convex portion 132A. The inclined portion 141 may be a flat inclined portion or a rounded inclined portion. The curved portion 92b of the contact pin 92 contacts the inclined portion 141.

[0112] With this configuration, the size of the contact portion CP between the terminal 41 and the contact pin 92 can be increased compared to the second embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0113] (Fifth Modification of the Second Embodiment) Next, a fifth modified example of the second embodiment will be described. The fifth modified example differs from the second embodiment in that a non-flat portion 170 is provided. Note that the configuration other than that described below is the same as the configuration of the second embodiment.

[0114] 24 is a diagram showing a terminal 41 of a fifth modified example of the second embodiment. In this modified example, the terminal 41 has a first region S1 and a second region S2.

[0115] When viewed from the Z direction, the first region S1 is a region at least partially overlapping with the curved portion 92b of the contact pin 92. The width of the first region S1 in the Y direction is greater than the width of the curved portion 92b of the contact pin 92 in the Y direction. The width of the first region S1 in the X direction is greater than the width of the first region S1 in the Y direction. The width of the first region S1 in the X direction is, for example, more than half the width of the terminal 41 in the X direction. The center C2 in the X direction of the first region S1 is shifted to one side in the X direction with respect to the center C1 in the X direction of the terminal 41. The one side is the side to which the contact pin 92 approaches the terminal 41 when the contact pin 92 contacts the terminal 41.

[0116] The second region S2 is a region of the terminal 41 that is outside the first region S1. For example, the second region S2 is a region that does not overlap the curved portion 92b of the contact pin 92 compared to the first region S1 when viewed from the Z direction. The second region S2 is a region located between the first region S1 and the ends of the terminal 41 in the X direction and the Y direction. For example, the second region S2 is a frame-shaped region that surrounds the first region S1.

[0117] In this modification, the second region S2 has the above-described non-flat portion 50A. That is, the second region S2 has a concave-convex structure in which recesses 61A and protrusions 62A are arranged alternately by providing a plurality of protrusions 151. On the other hand, the first region S1 has a non-flat portion 170. The non-flat portion 170 is an example of a "second non-flat portion."

[0118] In this modified example, the non-flat portion 170 has a plurality of protruding portions 171. In the example shown in FIG. 24 , three protruding portions 171 are arranged side by side in the Y direction. When viewed from the Z direction, each protruding portion 171 has a rectangular shape extending linearly in the X direction. The width of the protruding portion 171 in the X direction is greater than the width of the protruding portion 151 in the X direction. The protruding height of the protruding portion 171 is the same as the protruding height of the protruding portion 151. In this modified example, by providing a plurality of protruding portions 171, the first region S1 has an uneven structure in which recessed portions 181 and protruding portions 182 are arranged alternately. The recessed portions 181 and the protruding portions 182 are arranged alternately in the X direction. The recessed portions 181 are an example of a "second recessed portion." The protruding portions 182 are an example of a "second protruding portion."

[0119] (Shape of the convex part) The protrusion 182 is formed by the protrusion 171. In other words, the "protrusion 182" may be read as the "protrusion 171." The multiple protrusions 182 are arranged at equal intervals in the Y direction. The width of the protrusion 182 in the Y direction is, for example, the same as the width of the protrusion 62A in the Y direction. The width of the protrusion 182 in the X direction is, for example, larger than the width of the protrusion 62A in the X direction. The width of the protrusion 182 in the X direction is, for example, larger than the width of the protrusion 182 in the Y direction. The protrusion 182 extends linearly in the X direction. The width of the protrusion 182 in the X direction is, for example, more than half the width of the terminal 41 in the X direction. The center C3 of the protrusion 182 in the X direction is shifted to one side in the X direction with respect to the center C1 of the terminal 41 in the X direction. The one side is the side to which the contact pin 92 approaches the terminal 41 when the contact pin 92 contacts the terminal 41.

[0120] The width in the Y direction of the protrusion 182 is smaller than the width in the Y direction of the curved portion 92b of the contact pin 92. In this modification, the curved portion 92b of the contact pin 92 contacts the protrusion 182 at the terminal 41. When the terminal 41 and the contact pin 92 are in contact with each other, the contact pin 92 is movable on the protrusion 182 in the X direction along the surface of the protrusion 182.

[0121] (shape of recess) The recess 181 is a portion defined between two adjacent protrusions 182 by providing a plurality of protrusions 182. In this modification, the recess 181 is defined between two adjacent protrusions 182 in the Y direction. The width of the recess 181 in the Y direction is the same as the width of the recess 61A in the Y direction. The recess 181 extends linearly in the X direction. The width of the recess 181 in the X direction is, for example, larger than the width of the recess 61A in the X direction.

[0122] This configuration can improve the rigidity of the protrusions 182 against the frictional force in the X direction that occurs when the protrusions 182 come into contact with the contact pins 92. If the protrusions 182 can be prevented from collapsing when the protrusions 182 come into contact with the contact pins 92, electrical problems related to the terminals 41 can be more easily prevented.

[0123] (Sixth Modification of the Second Embodiment) Next, a sixth modified example of the second embodiment will be described. The sixth modified example differs from the second embodiment in that the first region S1 has a non-flat portion 50. Note that the configuration other than that described below is the same as the configuration of the second embodiment.

[0124] FIG. 25 is a diagram showing a terminal 41 according to a sixth modified example of the second embodiment. In this modified example, the terminal 41 has a first region S1 and a second region S2. The second region S2 has the non-flat portion 50A described above. That is, the second region S2 has a concave-convex structure in which recesses 61A and protrusions 62A are alternately arranged due to the provision of a plurality of protrusions 151. In this modified example, the non-flat portion 50A is an example of a "first non-flat portion."

[0125] On the other hand, the first region S1 has a protruding portion 191 and a non-flat portion 50 provided on the protruding portion 191. The protruding height of the protruding portion 191 is the same as the protruding height of the protruding portion 151. The width of the protruding portion 191 in the Y direction is greater than the width of the protruding portion 151 in the Y direction. The width of the protruding portion 191 in the Y direction is greater than, for example, the width of the curved portion 92b of the contact pin 92. The width of the protrusion 191 in the X direction is, for example, larger than the width of the protrusion 191 in the Y direction. The width of the protrusion 191 in the X direction is, for example, equal to or larger than half the width of the terminal 41 in the X direction. The center C5 of the protrusion 191 in the X direction is shifted to one side in the X direction with respect to the center C1 of the terminal 41 in the X direction. This one side is the side to which the contact pin 92 approaches the terminal 41 when the contact pin 92 comes into contact with the terminal 41.

[0126] Non-flat portion 50 is provided on the surface of protruding portion 191. That is, protruding portion 191 has a plurality of depressions 51 provided therein, thereby having an uneven structure in which recessed portions 61 and protruding portions 62 are arranged alternately. In this modification, non-flat portion 50 is an example of a "second non-flat portion."

[0127] This configuration can improve the rigidity of protrusion 191 against the frictional force in the X direction that occurs when protrusion 191 comes into contact with contact pin 92. If protrusion 191 can be prevented from collapsing when it comes into contact with contact pin 92, electrical problems related to terminal 41 can be more easily prevented.

[0128] (Seventh Modification of the Second Embodiment) Next, a seventh modified example of the second embodiment will be described. The seventh modified example differs from the sixth modified example of the second embodiment in that the recess 61 provided in the protrusion 191 extends linearly in the X direction. Note that the configuration other than that described below is the same as the configuration of the sixth modified example of the second embodiment.

[0129] 26 is a diagram showing a terminal 41 according to a seventh modified example of the second embodiment. In this modified example, the terminal 41 has a protrusion 191 and a non-flat portion 50 provided on the protrusion 191. The recessed portion 61 and the protruding portion 62 included in the non-flat portion 50 extend linearly in the Y direction. The width in the X direction of each of the recessed portion 61 and the protruding portion 62 is, for example, half or more of the width of the terminal 41 in the X direction.

[0130] This configuration can improve the rigidity of protrusion 191 against the frictional force in the X direction that occurs when protrusion 191 comes into contact with contact pin 92. If protrusion 191 can be prevented from collapsing when it comes into contact with contact pin 92, electrical problems related to terminal 41 can be more easily prevented.

[0131] (Eighth Modification of the Second Embodiment) Next, an eighth modified example of the second embodiment will be described. The eighth modified example differs from the second embodiment in that the first region R1 has a protrusion 200. Note that the configuration other than that described below is the same as the configuration of the second embodiment.

[0132] 27 is a diagram showing a terminal 41 according to an eighth modified example of the second embodiment. In this modified example, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the non-flat portion 50A described above. That is, the second region R2 has a plurality of protrusions 151, resulting in an uneven structure in which recesses 61A and protrusions 62A are alternately arranged.

[0133] On the other hand, the first region R1 has a protruding portion 200. The protruding portion 200 comes into contact with the curved portion 92b of the contact pin 92. The protruding portion 200 is an example of a "receiving portion." In this embodiment, the surface of the protruding portion 200 has a curved portion 201 that is curved in the same direction as the curved direction of the curved portion 92b. For example, the curved portion 201 has a wavy shape with the same curvature as the curved portion 92b. The contact portion CP between the terminal 41 and the contact pin 92 is formed along the curved portion 201.

[0134] According to this aspect, the contact area CP between the terminal 41 and the contact pin 92 can be made larger than in the first embodiment. This makes it easier for heat to be transferred from the terminal 41 to the contact pin 92. This further improves heat dissipation. In addition, the contact resistance between the terminal 41 and the contact pin 92 is reduced, further stabilizing the electrical connection between the terminal 41 and the contact pin 92.

[0135] (Ninth Modification of the Second Embodiment) Next, a ninth modified example of the second embodiment will be described. The ninth modified example differs from the second embodiment in that at least some of the protrusions 62A have a trapezoidal cross section. Note that the configuration other than that described below is the same as that of the second embodiment.

[0136] 28 is a diagram showing a terminal 41 according to a ninth modified example of the second embodiment. In this modified example, at least the cross section of the convex portion 62A (protrusion 151) provided in the first region S1 is formed to be trapezoidal. That is, the width of the convex portion 62A in the X direction and / or the width of the convex portion 62A in the Y direction gradually increases toward the main body portion 45.

[0137] This configuration can improve the rigidity of the protrusion 62A against the frictional force in the X direction that occurs when the protrusion 62A comes into contact with the contact pin 92. If the protrusion 62A can be prevented from collapsing when the protrusion 62A comes into contact with the contact pin 92, electrical problems related to the terminal 41 can be more easily prevented.

[0138] (Tenth Modification of the Second Embodiment) Next, a tenth modified example of the second embodiment will be described. The tenth modified example differs from the second embodiment in that at least some of the protrusions 132A have a trapezoidal cross section. Note that the configuration other than that described below is the same as that of the second embodiment.

[0139] 29 is a diagram showing a terminal 41 according to a tenth modified example of the second embodiment. In this modified example, the cross section of at least a part of the convex portion 132A (protrusion 161) is formed in a trapezoidal shape. That is, the width of the convex portion 62A in the X direction and / or the width of the convex portion 62A in the Y direction gradually increases toward the main body portion 45.

[0140] This configuration can improve the rigidity of the protrusion 132A against the frictional force in the X direction that occurs when the protrusion 132A comes into contact with the contact pin 92. If the protrusion 132A can be prevented from collapsing when it comes into contact with the contact pin 92, electrical problems related to the terminal 41 can be more easily prevented.

[0141] (Third embodiment) Next, a third embodiment will be described. The third embodiment differs from the first or second embodiment in that the solder resist layer 32 has a non-flat portion 310. Note that the configuration other than that described below is the same as that of the first or second embodiment. The terminal 41 of the semiconductor memory device 10 of the third embodiment has non-flat portions 50, 50A, 120, 120A, and 170, similar to the first embodiment, the modified first embodiment, the second embodiment, or any one of the modified second embodiment.

[0142] FIG. 30 is a diagram showing a semiconductor memory device 10 according to a third embodiment. In this embodiment, the solder resist layer 32 has a non-flat portion 310. The non-flat portion 310 is provided in an area between the area A2 and the area A3. The non-flat portion 310 is an example of a "third non-flat portion." The non-flat portion 310 is covered with, for example, a thermally conductive sheet 70. The thermally conductive sheet 70 is in contact with the non-flat portion 310.

[0143] FIG. 31 is a diagram illustrating a semiconductor memory device 10 according to a third embodiment. The surface layer 30 includes a non-planar portion 310. When viewed from the Z direction, the non-planar portion 310 is located in a region of the surface layer 30 away from the terminals 41. The non-planar portion 310 includes a plurality of recesses 311. The recesses 311 are arranged in a matrix of, for example, four columns in the X direction and eight columns in the Y direction. The recesses 311 are bottomed holes formed in the solder resist layer 32. In the Z direction, the recesses 311 extend to positions closer to the insulating substrate 21 than some of the terminals 41. For example, the recesses 311 reach the surface 21s of the insulating substrate 21. In this embodiment, the provision of the plurality of recesses 311 described above allows the non-planar portion 310 to have an uneven structure in which recesses 321 and protrusions 322 are alternately arranged. For example, the recesses 321 and protrusions 322 are alternately arranged in both the X direction and the Y direction. The recess 321 is an example of a "third recess." The protrusion 322 is an example of a "third protrusion." Details of the non-flat portion 310 are described in the specification of Japanese Patent Application No. 2023-149155, the entire contents of which are incorporated herein by reference.

[0144] (Fourth embodiment) Next, a fourth embodiment will be described. The fourth embodiment differs from the first or second embodiment in that the solder resist layer 32 has a non-flat portion 310A. Note that the configuration other than that described below is the same as that of the first or second embodiment. The terminal 41 of the semiconductor memory device 10 of the fourth embodiment has non-flat portions 50, 50A, 120, 120A, and 170, similar to the first embodiment, the modified first embodiment, the second embodiment, or any one of the modified second embodiments.

[0145] FIG. 32 is a diagram showing a semiconductor memory device 10 according to a fourth embodiment. In this embodiment, the solder resist layer 32 has a non-flat portion 310A. The non-flat portion 310A is provided in an area between the area A2 and the area A3. The non-flat portion 310A is an example of a "third non-flat portion." The non-flat portion 310A is covered with, for example, a thermally conductive sheet 70. The thermally conductive sheet 70 is in contact with the non-flat portion 310A.

[0146] When viewed from the Z direction, the non-flat portion 310A is provided in a region of the surface layer portion 30 away from the plurality of terminals 41. The non-flat portion 310A has a recess 330 and a plurality of protrusions 331. The recess 330 is recessed in a direction approaching the insulating base material 21 relative to the regions A2 and A3. The recess 330 reaches a position closer to the insulating base material 21 in the Z direction than a portion of the terminals 41. For example, the recess 330 reaches the surface 21s of the insulating base material 21.

[0147] A plurality of protrusions 331 are provided in the recess 330. Each protrusion 331 is a columnar protrusion protruding in the Z direction within the recess 330. For example, each protrusion 331 protrudes from the surface 21s of the insulating substrate 21 in a direction away from the insulating substrate 21. The plurality of protrusions 331 are arranged in a matrix of, for example, four columns in the X direction and eight columns in the Y direction. In this embodiment, by providing the plurality of protrusions 331 described above, the non-flat portion 310A has an uneven structure in which recesses 321A and protrusions 322A are alternately arranged. For example, the recesses 321A and protrusions 322A are alternately arranged in both the X direction and the Y direction. The recess 321A is an example of a "third recess." The protrusion 322A is an example of a "third protrusion." Details of the non-flat portion 310A are described in the specification of the above-mentioned Japanese Patent Application No. 2023-149155.

[0148] (Modification common to the first to fourth embodiments) Next, a modified example common to the first to fourth embodiments will be described. 33 is a diagram showing a semiconductor memory device 10 according to a modification of the first to fourth embodiments. In this modification, the molding resin 15 has a second surface 15b located on the side opposite to the substrate 11. The second surface 15b has a non-flat portion 410 in which recesses 411 and protrusions 412 are alternately arranged. The recesses 411 and protrusions 412 are alternately arranged in the X direction and the Y direction, for example.

[0149] The recesses 411 are arranged at equal intervals in the X direction. The recesses 411 are also arranged at equal intervals in the Y direction. The recesses 411 are provided such that the protrusions 412 are defined between two adjacent recesses 411. In this application, the term "protrusion" refers to a portion that protrudes in a direction away from the insulating substrate 21 compared to the bottom of the recess 411. In this embodiment, the protrusions 412 are formed from the same insulating material as the mold resin 15.

[0150] This configuration can further increase the heat dissipation area of ​​the semiconductor memory device 10. This can further improve the heat dissipation performance of the semiconductor memory device 10.

[0151] The first to fourth embodiments and modifications have been described above. However, the embodiments and modifications are not limited to the above examples. For example, the thermally conductive sheet 70 is not an essential component. Furthermore, the semiconductor memory device 10 is not limited to a case where the recessed portions and the protruding portions are formed by only one of a plurality of recesses and a plurality of protruding portions. For example, the semiconductor memory device 10 may have both a plurality of recesses and a plurality of protruding portions, thereby forming the recessed portions and the protruding portions.

[0152] Furthermore, the connector 90 is not limited to a hinge-type (clamshell-type) connector. For example, the connector 90 may be a push-pull type connector or a push-push type connector.

[0153] According to at least one of the embodiments described above, a semiconductor memory device includes a first substrate, a molding resin, and a memory chip. The first substrate has a first surface and a second surface located opposite the first surface. The molding resin covers the first surface when viewed in the thickness direction of the first substrate. The memory chip is disposed between the first surface and the molding resin. The first substrate includes a terminal provided on the second surface and exposed to the outside. The terminal has a first non-flat portion having at least one of a plurality of recesses and a plurality of protrusions, with first recesses and first protrusions arranged alternately. This configuration can improve the heat dissipation of the semiconductor memory device.

[0154] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as the inventions described in the claims and their equivalents. [Explanation of symbols]

[0155] 10...Semiconductor memory device 11...Substrate (first substrate) 11a…First page 11b…Second side 12...Memory chip 15...Molding resin 21...Insulating substrate 30...Surface layer 41...Terminal 50,50A…Non-plane part (first non-plane part) 51...Depression 61, 61A...recess (first recess) 62, 62A...Convex portion (first convex portion) 80...Substrate (second substrate) 90...Connector 92...Contact pin 92a...extension part 92b...Bend 111…Plane part 120,120A…Non-plane part (second non-plane part) 121...Depression 131, 131A...recess (second recess) 132, 132A... Convex portion (second convex portion) 141…Slope part 151...Protrusion 161...Protrusion 170...Non-plane part (second non-plane part) 171...Protrusion 181...recess 182...Convex part 200...Protruding part (receiving part) 310,310A...Non-plane part (third non-plane part) 311...Depression 321, 321A...recess (third recess) 322, 322A... Convex part (third convex part) 331...Protrusion R1…first area R2…Second area S1...first area S2…Second area HS: Host device

Claims

1. a first substrate having a first surface and a second surface located opposite the first surface; a molding resin that covers the first surface when viewed in a thickness direction of the first substrate; a memory chip disposed between the first surface and the molding resin; Equipped with the first substrate includes a terminal provided on the second surface and exposed to the outside, The terminal has a first non-flat portion having at least one of a plurality of recesses and a plurality of protrusions, and first recesses and first protrusions are arranged alternately. Semiconductor memory device.

2. the semiconductor memory device is detachably attachable to a socket-type connector provided on a second board of a host device; 2. The semiconductor memory device according to claim 1.

3. the semiconductor memory device is detachably attachable to the connector in a state where contact pins of the connector are in contact with the terminals, 3. The semiconductor memory device according to claim 2.

4. the contact pin has a curved portion provided at a tip end of the contact pin and curved toward an opposite side to the terminal, When viewed in a thickness direction of the first substrate, the terminal has a first region at least a part of which overlaps with the curved portion and a second region outside the first region, The first non-planar portion is provided at least in the second region.

4. The semiconductor memory device according to claim 3.

5. The first region has a planar portion that is flatter than the first non-planar portion.

5. The semiconductor memory device according to claim 4.

6. When the extending direction of the contact pin is defined as a first direction and a direction intersecting the first direction is defined as a second direction, a width of the flat portion in the second direction is greater than a width of the first protrusion in the second direction; 6. The semiconductor memory device according to claim 5.

7. a width of the flat portion in the second direction is greater than a width of the curved portion of the contact pin in the second direction; 7. The semiconductor memory device according to claim 6.

8. When the extending direction of the contact pin is defined as a first direction and a direction intersecting the first direction is defined as a second direction, the first region has a second non-flat portion having at least one of a plurality of recesses and a plurality of protrusions, and in which second recesses and second protrusions are alternately arranged; When viewed from the thickness direction of the first substrate, the width of the second protrusion in the second direction is larger than the width of the second protrusion in the first direction.

5. The semiconductor memory device according to claim 4.

9. a width of the second protrusion in the second direction is greater than a width of the first protrusion in the second direction; 9. The semiconductor memory device according to claim 8.

10. a width in the second direction of the second protrusion portion is greater than a width in the second direction of the curved portion of the contact pin; 10. The semiconductor memory device according to claim 8.

11. an edge of at least one of the second protrusions in the first direction has an inclined portion inclined with respect to the first surface; 10. The semiconductor memory device according to claim 8.

12. When the extending direction of the contact pin is defined as a first direction and a direction intersecting the first direction is defined as a second direction, the first non-planar portion is provided in the first region and the second region, an edge in the first direction of at least one of the first protrusions provided in the first region has an inclined portion inclined with respect to the first surface; 5. The semiconductor memory device according to claim 4.

13. When the extending direction of the contact pin is defined as a first direction and a direction intersecting the first direction is defined as a second direction, the first region has a second non-flat portion having at least one of a plurality of recesses and a plurality of protrusions, and in which second recesses and second protrusions are alternately arranged; a width of the second protrusion in the first direction being larger than a width of the second protrusion in the second direction; 5. The semiconductor memory device according to claim 4.

14. The width of the second protrusion in the first direction is equal to or greater than half of the width of the terminal in the first direction.

14. The semiconductor memory device according to claim 13.

15. a center of the second protrusion in the first direction is shifted to one side in the first direction with respect to a center of the terminal in the first direction; 15. The semiconductor memory device according to claim 13.

16. the first region has a receiving portion with which the curved portion of the contact pin comes into contact, The receiving portion has a curved surface portion curved in the same direction as the bending direction of the bending portion.

5. The semiconductor memory device according to claim 4.

17. the first substrate has a surface layer portion that forms the second surface, the surface layer portion including a conductive pattern including the terminal and an insulating layer that covers a part of the conductive pattern; the surface layer portion has a third non-flat portion in an area away from the terminal, the third non-flat portion having at least one of a plurality of recesses and a plurality of protrusions, and in which third recesses and third protrusions are alternately arranged; 3. The semiconductor memory device according to claim 1.

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