Light emitting device, display device, photoelectric conversion device, electronic device, lighting device, mobile object, and method for manufacturing light emitting device

Abstract

To provide a technique advantageous in improving an aperture ratio of a light emitting element.SOLUTION: A light emitting device includes a plurality of light emitting elements disposed on a main surface of a substrate. Each of the plurality of light emitting elements includes: a first electrode disposed in a recessed part provided in an insulating layer disposed on the main surface; an organic layer disposed so as to cover the insulating layer and the first electrode and including a light emitting layer and an organic functional layer disposed between the light emitting layer and the first electrode; and a second electrode disposed so as to cover the organic layer. A groove is provided in a portion of a side wall of the recessed part that is farther from the main surface than a surface of the first electrode, and a portion of the insulating layer that is farther from the main surface than the surface of the first electrode does not overlap the first electrode in an orthogonal projection with respect to the main surface.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a method for manufacturing a light-emitting device. [Background technology]

[0002] In light-emitting devices using self-luminous elements such as organic electroluminescence (EL) elements, a structure in which multiple light-emitting elements share an organic layer including a light-emitting layer is known. Sharing an organic layer is advantageous for achieving high definition because it is not necessary to form an organic layer for each light-emitting element. However, it also makes it more likely that current leakage will occur between adjacent light-emitting elements via the organic layer. Leakage current can cause unintended light emission and narrow the color gamut that represents the display performance of the light-emitting device. Patent Document 1 shows that an insulating layer having openings for exposing electrodes arranged for each light-emitting element has eaves on the edges of the openings to suppress leakage current between light-emitting elements. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-232631 Summary of the Invention [Problem to be solved by the invention]

[0004] In the configuration disclosed in Patent Document 1, the overhangs cover part of the electrodes, which reduces the aperture ratio of the light-emitting element.

[0005] An object of the present invention is to provide a technique that is advantageous for improving the aperture ratio of a light-emitting element. [Means for solving the problem]

[0006] In view of the above problems, a light-emitting device according to an embodiment of the present invention is a light-emitting device comprising a plurality of light-emitting elements arranged on a main surface of a substrate, each of the plurality of light-emitting elements including: a first electrode arranged in a recess provided in an insulating layer arranged on the main surface; an organic layer arranged to cover the insulating layer and the first electrode, the organic layer including a light-emitting layer and an organic functional layer arranged between the light-emitting layer and the first electrode; and a second electrode arranged to cover the organic layer, wherein a groove is provided in a portion of the side wall of the recess that is farther from the main surface than the surface of the first electrode; and a portion of the insulating layer that is farther from the main surface than the surface of the first electrode does not overlap with the first electrode in an orthogonal projection onto the main surface. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a technique that is advantageous for improving the aperture ratio of a light-emitting element. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view showing an example of the configuration of a light emitting device according to an embodiment of the present invention. [Figure 2] 2 is a cross-sectional view showing a configuration example of a light-emitting element of the light-emitting device in FIG. [Figure 3] 2 is a cross-sectional view showing a configuration example of a light-emitting element of the light-emitting device in FIG. [Figure 4] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 5] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 6] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 7] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 8] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 9] 2 is a cross-sectional view showing a configuration example of a light-emitting element of the light-emitting device in FIG. [Figure 10] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 11] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device of FIG. [Figure 12] 2 is a cross-sectional view showing a configuration example of a light-emitting element of the light-emitting device in FIG. [Figure 13] 2 is a cross-sectional view showing a configuration example of a light-emitting element of the light-emitting device in FIG. [Figure 14] 2 is a cross-sectional view showing a configuration example of a light-emitting element of the light-emitting device in FIG. [Figure 15] 2 is a cross-sectional view showing a configuration example of a pixel of the light-emitting device of FIG. [Figure 16] FIG. 1 is a diagram showing an example of an image forming apparatus using a light emitting device according to an embodiment of the present invention. [Figure 17] 1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 18] FIG. 1 is a diagram showing an example of a photoelectric conversion device using the light emitting device of this embodiment. [Figure 19] 1A to 1C are diagrams illustrating examples of electronic devices using the light-emitting device of this embodiment. [Figure 20] 1A and 1B are diagrams illustrating an example of a display device using the light-emitting device of this embodiment. [Figure 21] 1 is a diagram showing an example of a lighting device using the light-emitting device of this embodiment. [Figure 22] 1A and 1B are diagrams showing an example of a moving object using the light emitting device of the present embodiment. [Figure 23] FIG. 1 is a diagram showing an example of a wearable device using the light-emitting device of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0010] A light emitting device according to an embodiment of the present disclosure will be described with reference to Figures 1 to 15. Figure 1 is a plan view showing an example of the configuration of a light emitting device 100 according to this embodiment. Figure 1 shows a part of a pixel region of the light emitting device 100 in which a plurality of light emitting elements 210 are arranged. Figure 2 is a cross-sectional view taken along line A-A' in Figure 1.

[0011] The light-emitting device 100 includes a plurality of light-emitting elements 210 arranged on a main surface 220 of a substrate 200. As shown in FIG. 1 , in this embodiment, the plurality of light-emitting elements 210 are arranged in a delta configuration, and three adjacent light-emitting elements 210R, 210B, and 210G form one pixel. The "R" in the light-emitting element 210R indicates the light-emitting element 210 that emits red light, and similarly, the light-emitting elements 210B and 210G indicate the light-emitting elements 210 that emit blue light and green light, respectively. In this specification, when referring to a specific light-emitting element 210 among the plurality of light-emitting elements 210, a subscript is added after the reference number, such as light-emitting element 210 "R." When either light-emitting element 210 is acceptable, the light-emitting element is simply referred to as "light-emitting element 210." The same applies to other components.

[0012] In this embodiment, the light emitting elements 210 are arranged in a delta array, but this is not limiting and other arrays such as a stripe array or a mosaic array may be used. Furthermore, although the light emitting elements 210 of each color are shown to have the same area, they may have different areas depending on the emitted color, taking into consideration the resolution of the light emitting device 100 and the luminous efficiency of each color. Furthermore, as shown in FIG. 1, the shape of the light emitting elements 210 is hexagonal, but other shapes such as a rectangle may be selected as appropriate.

[0013] Furthermore, in the present embodiment, an example in which one pixel is formed by three light-emitting elements 210 has been described; however, the number of light-emitting elements 210 forming one pixel does not necessarily have to be three. For example, two green light-emitting elements 210G may be arranged in one pixel depending on the resolution of the light-emitting device 100, the light-emitting efficiency of each color, and the like. Furthermore, one pixel may be formed by four light-emitting elements 210, with light-emitting elements emitting white light in addition to red, blue, and green being arranged in one pixel. Furthermore, for example, if the light-emitting device 100 is a device that performs monochrome display, one light-emitting element 210 may form one pixel. Furthermore, the pitch between adjacent light-emitting elements 210 and the pitch between pixels formed by one or more light-emitting elements 210 can be set arbitrarily depending on the pixel density required for the light-emitting device 100, and the like.

[0014] FIG. 2 schematically shows a cross-sectional structure of one light-emitting element 210 perpendicular to the main surface 220 of the substrate 200. Each of the plurality of light-emitting elements 210 is provided on a wiring layer 201 arranged on the main surface 220 of the substrate 200. Transistors, capacitors, wiring patterns, etc. are arranged on the substrate 200 and the wiring layer 201. A semiconductor substrate such as silicon may be used for the substrate 200. The wiring layer 201, on which a wiring pattern for connecting the transistors arranged on the substrate 200 and the light-emitting elements 210 is arranged, is made of, for example, silicon oxide (SiO x ), silicon nitride (SiN x The light emitting element 210 is disposed on the wiring layer 201 having a planarized surface.

[0015] Each of the plurality of light-emitting elements includes an electrode 120, an organic layer 130 including a light-emitting layer 132 and an organic functional layer 131 disposed between the light-emitting layer 132 and the electrode 120, and an electrode 140. The electrode 120 is disposed in a recess 160 provided in an insulating layer 110 disposed on a major surface 220 of a substrate 200. The organic layer 130 is disposed so as to cover the insulating layer 110 and the electrode 120 embedded in the recess 160 provided in the insulating layer 110. The electrode 140 is disposed so as to cover the organic layer 130.

[0016] The insulating layer 110, which has a recess 160 in which the electrode 120 is disposed, is disposed on the wiring layer 201. A groove 150 is provided in a portion of the sidewall 161 of the recess 160 provided in the insulating layer 110, which portion is farther from the main surface 220 of the substrate 200 than the surface 125 of the electrode 120. For example, in orthogonal projection onto the main surface 220 of the substrate 200, the groove 150 may be disposed so as to surround the electrode 120. Furthermore, the portion of the insulating layer 110 farther from the main surface 220 of the substrate 200 than the surface 125 of the electrode 120 is formed so as not to overlap with the electrode 120 in orthogonal projection onto the main surface 220 of the substrate 200.

[0017] The insulating layer 110 may be formed using, for example, a chemical vapor deposition (CVD) method, a physical vapor deposition (PVD) method, an atomic layer deposition (ALD) method, or a coating method. The insulating layer 110 may be formed using an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, carbon-containing silicon oxide, or aluminum oxide, or an organic material such as acrylic or polyimide. The recess 160 can be patterned into a desired shape using, for example, a photolithography method or an etching method. The recess 160 provided in the insulating layer 110 is a region surrounded by sidewalls 161 and a bottom surface on which the electrode 120 is disposed. In the cross-sectional view shown in FIG. 2, the portion including (surrounded by) two sidewalls 161 and one bottom surface is the recess 160. In this embodiment, the insulating layer 110 includes an insulating layer 113, an insulating layer 112 disposed between the insulating layer 113 and the main surface 220 of the substrate 200, and an insulating layer 111 disposed between the insulating layer 112 and the main surface 220 of the substrate 200. On a side wall 161 of a recess 160 provided in the insulating layer 110, the insulating layer 112 is recessed in a direction parallel to the main surface 220 of the substrate 200 more than the insulating layer 111 and the insulating layer 113, thereby forming the groove 150 described above.

[0018] The insulating layer 112 may contain a different material from the insulating layers 111 and 113. The insulating layers 111 and 113 may be made of the same material. Alternatively, for example, the insulating layers 111, 112, and 113 may be made of different materials. Here, the material refers to the above-mentioned silicon oxide, silicon nitride, acrylic, polyimide, etc. The insulating layers 111, 112, and 113 may be made of materials having different selectivities with respect to the etchant used to form the groove 150. For example, the insulating layer 112 may contain a material having a higher etching rate with respect to the etchant used to form the groove 150 than the insulating layers 111 and 113. This makes it possible to form the groove 150 relatively easily using the manufacturing method described below. The etching rates (selectivity) of the insulating layers 111, 112, and 113 can be adjusted by appropriately selecting the materials and etchants used for the insulating layers 111, 112, and 113. In this embodiment, the insulating layer 110 is composed of three layers, namely, the insulating layers 111, 112, and 113, but one or more other insulating layers may be further disposed between the insulating layer 111 and the wiring layer 201.

[0019] As described above, the electrode 120 is disposed in the recess 160 formed in the insulating layer 110. The electrode 120 is provided so as to be electrically isolated for each light-emitting element 210. As shown in FIG. 2 , the electrode 120 may include a conductive layer 123, a conductive layer 122 disposed between the conductive layer 123 and the main surface 220 of the substrate 200, and a conductive layer 121 disposed between the conductive layer 122 and the main surface 220 of the substrate 200. In this case, for example, the conductive layer 121 may be a barrier metal layer, the conductive layer 122 may be a reflective metal layer, and the conductive layer 123 may be a transparent electrode layer. By disposing the conductive layer 122 functioning as a reflective metal layer and increasing the reflectivity of light emitted from the light-emitting layer 132, it is possible to improve the luminous efficiency of the light-emitting element 210.

[0020] The conductive layer 122 may be made of a metal material having a reflectance of 80% or more for the emission wavelength of the light-emitting layer 132. The conductive layer 122 may be made of a metal such as aluminum or silver, or an alloy of these metals with silicon, copper, nickel, neodymium, or the like. When the conductive layer 122 has a high reflectance for the wavelength of light emitted by the light-emitting layer 132, the conductive layer 121, which functions as a barrier metal layer, may be made of a metal such as titanium, titanium nitride, tantalum nitride, tungsten, molybdenum, gold, or chromium, or an alloy thereof. The conductive layer 121 may have a stacked structure or a single layer structure. The light-emitting efficiency of the light-emitting element 210 can be improved by appropriately adjusting the film thickness of the conductive layer 123, which is a transparent electrode layer. The conductive layer 123 may be made of a transparent electrode material such as indium tin oxide or indium zinc oxide. The conductive layers 121, 122, and 123 may be formed by, for example, a sputtering method.

[0021] The organic layer 130 includes an organic functional layer 131 and an emissive layer 132. The organic functional layer 131 is disposed between the insulating layer 110 and the electrode 120 and the emissive layer 132. The organic functional layer 131 may be a hole transport layer. Alternatively, the organic functional layer 131 may be a hole injection layer or an electron blocking layer. The organic functional layer 131 may have a laminate structure of appropriate layers selected from a hole transport layer, a hole injection layer, an electron blocking layer, and the like. The emissive layer 132 is disposed between the organic functional layer 131 and the electrode 140. The emissive layer 132 may be continuously formed over the entire surface of a pixel region in which multiple light-emitting elements 210 are disposed and may be shared by multiple light-emitting elements 210. Appropriate materials can be selected for the emissive layer 132 from the viewpoints of luminous efficiency, operating life, optical interference, and the like. The emissive layer 132 may have a laminate structure of emissive layers that emit different colors, or may be a mixed layer containing emissive dopants that emit different colors. Furthermore, an organic functional layer other than the organic functional layer 131 may be disposed between the light-emitting layer 132 and the electrode 140. The organic functional layer disposed between the light-emitting layer 132 and the electrode 140 may be an electron transport layer, an electron injection layer, a hole blocking layer, or the like, or may have a laminate structure of appropriate layers selected from the electron transport layer, the electron injection layer, the hole blocking layer, and the like.

[0022] Here, the region between the electrode 120 and the electrode 140 that serves as an anode and the light-emitting layer is a hole transport region, and the region between the electrode that serves as a cathode and the light-emitting layer is an electron transport region. In this embodiment, the electrode 120 is an anode, and the electrode 140 is a cathode. However, this is not limited thereto; the electrode 120 may be a cathode, and the electrode 140 may be an anode. In this case, the organic functional layer 131 may be an electron transport layer, an electron injection layer, a hole blocking layer, or the like, or may have a laminate structure of appropriate layers selected from the electron transport layer, the electron injection layer, the hole blocking layer, and the like. Similarly, the organic functional layer disposed between the light-emitting layer 132 and the electrode 140 may be a hole transport layer, a hole injection layer, an electron blocking layer, or the like, or may have a laminate structure of appropriate layers selected from the hole transport layer, the hole injection layer, the electron blocking layer, and the like. The hole transport region and the electron transport region may be collectively referred to as a charge transport region.

[0023] The electrode 140 is disposed on the organic layer 130. Like the light-emitting layer 132, the electrode 140 may be continuously formed over the entire surface of a pixel region in which a plurality of light-emitting elements 210 are disposed, and may be shared by the plurality of light-emitting elements 210. The electrode 140 may be an electrode that transmits at least a portion of light that reaches the lower surface of the electrode 140. The electrode 140 may function as a semi-transmissive reflective layer that transmits a portion of light and reflects the other portion (i.e., semi-transmissive and reflective). The electrode 140 may be made of, for example, a metal such as magnesium or silver, an alloy mainly composed of magnesium or silver, or an alloy material containing an alkali metal or alkaline earth metal. Similarly to the conductive layer 123, the electrode 140 may be made of an oxide conductor or the like. The electrode 140 may have a single-layer structure or a multilayer structure as long as it has an appropriate transmittance.

[0024] The groove 150 is a depression formed on the surface of the sidewall 161 of the recess 160 provided in the insulating layer 110. As described above, the groove 150 may be a portion of the sidewall 161 of the recess 160 provided in the insulating layer 110, where the insulating layer 112 is recessed further than the insulating layer 111 and the insulating layer 113. By providing the groove 150 on the sidewall 161, the organic functional layer 131 includes a portion cut by the groove 150, or the film thickness of the portion covering the groove 150 is thinner than the film thickness before and after the portion covering the groove 150. In other words, by providing the groove 150 on the sidewall 161 of the recess 160 formed in the insulating layer 110, the organic functional layer 131 has high resistance in the groove 150 or near the groove 150. The organic functional layer 131, which functions as a hole transport layer, hole injection layer, or the like, has low resistivity and can become a path for current leakage between adjacent light-emitting elements 210. By increasing the resistance of the organic functional layer 131 between the adjacent light emitting elements 210, leakage current between the light emitting elements 210 can be suppressed.

[0025] 3 is an enlarged cross-sectional view of portion B shown in FIG. 2. As shown in FIG. 3, the length between surface 125 of electrode 120 and insulating layer 112 in the normal direction to main surface 220 of substrate 200 is defined as length H1. Length H1 can also be considered to be the height of the portion of insulating layer 111 above surface 125 of electrode 120. Similarly, the length of insulating layer 112 in the normal direction to main surface 220 of substrate 200 is defined as length H2. Length H2 can also be considered to be the film thickness of insulating layer 112 in the normal direction to main surface 220 of substrate 200. Furthermore, the length of insulating layer 113 in the normal direction to main surface 220 of substrate 200 is defined as length H3. Length H3 can also be considered to be the film thickness of insulating layer 113 in the normal direction to main surface 220 of substrate 200.

[0026] 3, the length of the organic functional layer 131 in contact with the electrode 120 in the normal direction to the main surface 220 of the substrate 200 is defined as length T1. Length T1 can also be considered to be the film thickness of the organic functional layer 131 in contact with the electrode 120 in the normal direction to the main surface 220 of the substrate 200. Length T1 can also be considered to be the film thickness of the organic functional layer 131 in contact with the electrode 120 in the normal direction to the main surface 220 of the substrate 200, which is located at the geometric center of gravity of the electrode 120 in orthogonal projection onto the main surface 220 of the substrate 200. Similarly, length T2 is considered to be the length of the organic layer 130 in the normal direction to the main surface 220 of the substrate 200 in the layer other than the organic functional layer 131 that is located on the electrode 120. Length T2 can also be considered to be the film thickness of the light-emitting layer 132 in the normal direction to the main surface 220 of the substrate 200. Furthermore, as described above, when an organic functional layer is also disposed between the light-emitting layer 132 and the electrode 140, the length T2 can also be considered to be the total film thickness of the light-emitting layer 132 and the organic functional layer disposed between the light-emitting layer 132 and the electrode 140 in the direction normal to the main surface 220 of the substrate 200. Alternatively, the length T2 may be the film thickness of the layers of the organic layer 130, excluding the organic functional layer 131, disposed at the geometric center of gravity of the electrode 120 in orthogonal projection onto the main surface 220 of the substrate 200, in the direction normal to the main surface 220.

[0027] 3, the length by which insulating layer 113 protrudes from insulating layer 112 at sidewall 161 of recess 160 provided in insulating layer 110 is defined as length D1. Length D1 can also be considered to be the recess of insulating layer 112, relative to insulating layers 111 and 113, of groove 150 in a direction parallel to main surface 220 of substrate 200. The inclination of a portion of sidewall 161 excluding groove 150 with respect to surface 125 of electrode 120 is defined as inclination θ1. The inclination θ1 can also be considered to be the inclination of insulating layers 111 and 113 at sidewall 161 with respect to surface 125 of electrode 120. The inclination θ1 can also be considered to be the inclination of a portion of sidewall 161 excluding groove 150 (or insulating layers 111 and 113) with respect to surface 125 of electrode 120. The inclination θ1 can also be the inclination of a portion of sidewall 161 excluding groove 150 (or insulating layers 111 and 113) with respect to a direction parallel to main surface 220 of substrate 200.

[0028] In this embodiment, the sum of lengths H1, H2, and H3 is smaller than length T2. The sum of lengths H1, H2, and H3 can also be said to be the length in the normal direction to main surface 220 between surface 125 of electrode 120 and the portion of sidewall 161 of recess 160 provided in insulating layer 110 that is farthest from main surface 220 of substrate 200. Also, lengths H1, H2, H3, and D1 are each larger than length T1. Furthermore, inclination θ1 is 50° or greater. That is, in this embodiment, the following equations (1) to (6) hold true. H1+H2+H3 < T2 (1) H1 > T1 (2) H2 > T1 (3) H3 > T1 (4) D1 > T1 (5) θ1 > 50° (6)

[0029] By satisfying the relationships of formulas (1) to (6), the electrode 120 is not covered by the insulating layer 110. Furthermore, as described above, the organic functional layer 131 is made highly resistant by the grooves 150 formed therein. Furthermore, the organic functional layer 131 can be thinned and cut due to the steep angle of the sidewalls 161 of the recesses 160 provided in the insulating layer 110 relative to the surface 125 of the electrode 120. In other words, the organic functional layer 131 can be made more resistant. In other words, it is possible to suppress leakage current between the light-emitting elements 210 without reducing the aperture ratio of the light-emitting elements 210.

[0030] Next, a method for manufacturing the light emitting device 100 will be described. First, a substrate 200 and a wiring layer 201 are formed. For example, transistors, capacitors, wiring patterns, etc. are formed by a known CMOS process. The top layer of the wiring layer 201 is made of an insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and the surface thereof is planarized by a CMP method or the like after being formed.

[0031] Next, as shown in FIG. 4(a), insulating layers 111, 112, and 113 are deposited in this order as insulating layer 110. As described above, insulating layer 112 is made of a material that has a different selectivity to an etchant for forming groove 150 from the material used for insulating layers 111 and 113. For example, silicon oxide may be used for insulating layers 111 and 113, and silicon nitride may be used for insulating layer 112. After insulating layers 111, 112, and 113 are formed as insulating layer 110, recess 160 is formed as shown in FIG. 4(b) using, for example, photolithography or etching.

[0032] When the insulating layers 111, 112, and 113 are formed of different materials, the etching rate of the insulating layer 113 when forming the recess 160 may be equal to or greater than the etching rate of the insulating layer 111. Furthermore, the etching rate of the insulating layer 112 when forming the recess 160 may be greater than the etching rate of the insulating layer 113 and the etching rate of the insulating layer 111. However, this is not limited thereto, and the etching rates (selectivity) when forming the recess 160 do not need to be significantly different among the insulating layers 111, 112, and 113. It is sufficient that etching can be performed so that the inclination θ1 of the sidewall 161 of the recess 160 is, for example, 50° or more with respect to the main surface 220 of the substrate 200. The insulating layers 111, 112, and 113 may be formed using a CVD method, a PVD method, an ALD method, or the like, as described above. Furthermore, when the insulating layers 111, 112, and 113 are made of a resin using an organic material, they may be formed using a coating method or the like. In addition to forming the recesses 160, contact plugs may be formed to establish electrical connection between the electrodes 120 and the wiring pattern of the wiring layer 201. Through the above steps, the insulating layer 110 having the recesses 160 is formed on the main surface 220 of the substrate 200.

[0033] 4(b), the groove 150 may be formed before the formation of the electrode 120 by selectively etching the insulating layer 112 relative to the insulating layers 111 and 113 when forming the recess 160 or after forming the recess 160. In other words, the step of forming the groove 150 may be performed before the step of embedding the electrode 120 in the recess 160 provided in the insulating layer 110, which will be described with reference to FIGS. 5(a) to 8(a).

[0034] For example, consider a case where silicon oxide is used for the insulating layers 111 and 113 and silicon nitride is used for the insulating layer 112. In this case, chemical etching (e.g., plasma etching) is performed using CF4 gas. By selecting appropriate conditions, the etching rate of the insulating layer 112 using silicon nitride becomes higher than the etching rate of the insulating layers 111 and 113 using silicon oxide. As a result, a groove 150 is formed that is recessed in a direction parallel to the main surface 220 of the substrate 200 from the surface of the sidewall 161 of the recess 160 formed in the insulating layer 110. When silicon oxide is used for the insulating layers 111 and 113 and silicon nitride is used for the insulating layer 112, the gas used to form the groove 150 by chemical etching is not limited to CF4. Other gases such as CF4, C4F8, etc. may be used. x F y Perfluorocarbon (PFC) gases, such as CHF3 and C2H2F4, are x H y F z A CF-based gas such as a hydrofluorocarbon (HFC) gas represented by the formula (I) may be used to form the groove 150 by chemical etching.

[0035] Furthermore, the formation of the groove 150 is not limited to chemical etching using a CF-based gas. When silicon oxide is used for the insulating layers 111 and 113 and silicon nitride is used for the insulating layer 112, the groove 150 can be formed by chemical etching (e.g., wet etching) using phosphoric acid. When silicon nitride is used for the insulating layers 111 and 113 and silicon oxide is used for the insulating layer 112, the groove 150 can be formed by chemical etching (e.g., wet etching) using hydrofluoric acid. To form the groove 150, an appropriate etchant (gas, solution, etc.) and etching method (plasma (dry) etching, wet etching, etc.) may be selected depending on the materials of the insulating layers 111, 112, and 113 that constitute the insulating layer 110.

[0036] Next, as shown in FIG. 5(a), a conductive layer 121 is formed using, for example, a sputtering method. To be precise, a conductive material that will become the conductive layer 121 is formed in a subsequent process, but here it is expressed as forming a "conductive layer 121." The same applies to other components. The conductive layer 121 may be a barrier metal layer containing titanium and titanium nitride. Next, as shown in FIG. 5(b), a conductive layer 122 (conductive material) is formed using, for example, a sputtering method. The conductive layer 122 may be a reflective metal layer made of an aluminum alloy.

[0037] After the conductive layers 121 and 122 (conductive material) are formed, the surfaces of the conductive layers 121 and 122 (conductive material) are planarized by, for example, CMP, as shown in Fig. 6(a). Then, as shown in Fig. 6(b), the conductive layers 121 and 122 (conductive material) are selectively etched with respect to the insulating layer 110. As a result, the conductive layers 121 and 122 are embedded in recesses 160 provided in the insulating layer 110, and are separated into individual light-emitting elements 210.

[0038] 6(b), the grooves 150 may be formed by selectively etching the insulating layer 112 relative to the insulating layers 111 and 113 during or after the step of selectively etching the conductive layers 121 and 122 (conductive material). When the grooves 150 are formed after selectively etching the conductive layers 121 and 122 (conductive material) and separating the conductive layers 121 and 122 into individual light-emitting elements 210, the method described above may be used. When the grooves 150 are formed during the step of selectively etching the conductive layers 121 and 122 (conductive material), an etchant and an etching method are selected that allow etching of the insulating layer 112 and the conductive layers 121 and 122 relative to the insulating layers 111 and 113.

[0039] Next, as shown in FIG. 7(a), a conductive layer 123 (conductive material) is formed using, for example, a sputtering method. The conductive layer 123 is a transparent conductive material layer such as indium tin oxide. After the conductive layer 123 (conductive material) is formed, the surface of the conductive layer 123 (conductive material) is planarized using, for example, a CMP method, as shown in FIG. 7(b). Furthermore, as shown in FIG. 8(a), the conductive layer 123 (conductive material) is selectively etched with respect to the insulating layer 110. As a result, the conductive layer 123 is embedded in the recesses 160 provided in the insulating layer 110 and separated into individual light-emitting elements 210. Through the above steps, the electrode 120 including the conductive layers 121, 122, and 123 is disposed in the recesses 160 provided in the insulating layer 110.

[0040] In this embodiment, the groove 150 is formed in the step shown in FIG. 6(b). However, the groove 150 may be formed in the step shown in FIG. 8(a) instead of the step shown in FIG. 6(b). That is, the groove 150 may be formed by selectively etching the insulating layer 112 relative to the insulating layers 111 and 113 during or after the step of selectively etching the conductive layer 123 (conductive material). When the groove 150 is formed after selectively etching the conductive layer 123 (conductive material) and separating the conductive layer 123 into individual light-emitting elements 210, the method described above may be used. When the groove 150 is formed during the step of selectively etching the conductive layer 123 (conductive material), an etchant and an etching method are selected that allow etching of the insulating layer 112 and the conductive layer 123 relative to the insulating layers 111 and 113. The groove 150 may be formed before the organic functional layer 131 is formed.

[0041] As described above, the manufacturing method of this embodiment does not require photolithography to form the electrode 120 and the groove 150 after forming the insulating layer 110. Therefore, it is not necessary to ensure an exposure margin when forming the electrode 120 and the groove 150 using photolithography and etching. In other words, the present disclosure provides a technique that is advantageous for miniaturizing the light-emitting element 210.

[0042] After the electrode 120 and the groove 150 are formed, the organic functional layer 131 is formed, for example, by vacuum deposition, as shown in FIG. 8(b). In the film formation using vacuum deposition, a metal mask can be used to selectively deposit a desired layer in a predetermined region (e.g., a pixel region where multiple light-emitting elements 210 are arranged). The organic functional layer 131 may be, for example, a hole injection layer, a hole transport layer, or an electron blocking layer, as described above, or may have a laminated structure thereof. When the organic functional layer 131 is formed, the presence of the groove 150 on the sidewall 161 of the recess 160 can prevent the organic functional layer 131 from being formed on the portion of the sidewall 161 where the groove 150 is arranged, and the organic functional layer 131 can be cut at the groove 150. Therefore, the groove 150 can increase the resistance of the organic functional layer 131 between the light-emitting elements 210.

[0043] Next, the light-emitting layer 132 and the electrode 140 are formed. The light-emitting layer 132 and the electrode 140 may be formed using a vacuum deposition method following the formation of the organic functional layer 131, without exposing the components arranged on the substrate 200 from a reduced pressure atmosphere to the atmosphere. This produces a light-emitting element 210 as shown in Fig. 2. An electron transport layer, an electron injection layer, or a hole blocking layer may be formed between the formation of the light-emitting layer 132 and the formation of the electrode 140.

[0044] As described above, the organic layer 130 including the organic functional layer 131 and the light-emitting layer 132, and the electrode 140 may be continuously formed over the entire surface of the pixel region in which the plurality of light-emitting elements 210 are arranged, and may be shared by the plurality of light-emitting elements 210. In other words, the organic layer 130 and the electrode 140 may be integrally arranged over the entire surface of the pixel region.

[0045] 2, a moisture-proof layer may be disposed on the upper surface of the electrode 140 so as to cover the electrode 140, for example, by using a plasma CVD method, a sputtering method, an ALD method, or the like. The moisture-proof layer may be formed using silicon nitride, aluminum oxide, or the like in a single-layer structure or a multilayer structure. The moisture-proof layer may be formed at a film-forming temperature below the decomposition temperature of the organic material that constitutes the organic layer 130, for example, at a film-forming temperature of 120°C or lower.

[0046] Furthermore, a planarization layer and a color filter may be disposed on the moisture-proof layer. The planarization layer may be formed of silicon oxide or the like deposited by a CVD method or a sputtering method. Alternatively, the planarization layer may be formed of a resin, such as acrylic or polyimide, deposited by a coating method. The color filter may be formed by, for example, applying a red filter material and patterning it using photolithography to form a color filter that transmits red light, and similarly, color filters that transmit green and blue light. The planarization layer and the color filter may be formed at a temperature below the decomposition temperature of the organic material constituting the organic layer 130, for example, 120°C or below. Furthermore, a planarization layer and a microlens may be disposed on the color filter. The microlens may be formed by applying a resin material and patterning it using photolithography. Like the planarization layer and the color filter, the microlens may also be formed at a temperature below the decomposition temperature of the organic material constituting the organic layer 130, for example, 120°C or below.

[0047] Fig. 9 is a cross-sectional view taken along line A-A' in Fig. 1, illustrating a modified example of the light-emitting element 210 illustrated in Fig. 2. Compared to the light-emitting element 210 illustrated in Fig. 2, the electrode 120 in the light-emitting element 210 illustrated in Fig. 9 further includes an insulating layer 124 disposed between the conductive layer 122 and the conductive layer 123. Other configurations may be similar to those of the light-emitting element 210 described above, and therefore, the following description will focus on the different configurations, and descriptions of configurations that may be similar will be omitted as appropriate.

[0048] The insulating layer 124 may be formed using, for example, a CVD method, a PVD method, an ALD method, or a coating method. The insulating layer 110 may be formed using inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, carbon-containing silicon oxide, or aluminum oxide, or organic materials such as acrylic or polyimide. By appropriately adjusting the thickness of the insulating layer 124, the light-emitting efficiency of the light-emitting element 210 can be improved. The conductive layers 122 and 123 are electrically connected by a conductor disposed in a through-hole formed in the insulating layer 124. For example, as shown in FIG. 9 , when forming the conductive layer 123, the conductive material of the conductive layer 123 is filled in the through-hole formed in the insulating layer 124, thereby electrically connecting the conductive layers 122 and 123.

[0049] Next, a method for manufacturing the light-emitting element 210 shown in Fig. 9 will be described. After the steps described using Fig. 4(a) to Fig. 6(a), as shown in Fig. 10(a), the conductive layers 121 and 122 (conductive material) are selectively etched with respect to the insulating layer 110. As a result, the conductive layers 121 and 122 are embedded in recesses 160 provided in the insulating layer 110, and are separated into individual light-emitting elements 210. At this time, in this embodiment, unlike the step shown in Fig. 6(b), it is assumed that the grooves 150 are not formed.

[0050] After the conductive layers 121 and 122 are separated into individual pixels, an insulating layer 124 (insulating material) is formed as shown in Fig. 10(b). The insulating layer 124 may be a layer containing a material different from that of the insulating layers 111, 112, and 113. The insulating layer 124 may also contain a material having an etching rate different from that of the insulating layers 111, 112, and 113 with respect to a predetermined etchant.

[0051] After the insulating layer 124 (insulating material) is formed, the surface of the insulating layer 124 (insulating material) is planarized using, for example, a CMP method, and then, as shown in Fig. 11, the insulating layer 124 (insulating material) is selectively etched with respect to the insulating layer 110. As a result, the insulating layer 124 is embedded in the recesses 160 provided in the insulating layer 110, and is separated into each light-emitting element 210. At this time, through holes may be formed that penetrate the insulating layer 124 and expose the conductive layer 121.

[0052] 11 , the grooves 150 are formed. That is, the grooves 150 may be formed by selectively etching the insulating layer 112 relative to the insulating layers 111 and 113 during or after the step of selectively etching the insulating layer 124 (insulating material). When the grooves 150 are formed after the insulating layer 124 (insulating material) is selectively etched and the insulating layer 124 is separated into each light-emitting element 210, the method described above can be used.

[0053] Furthermore, when the groove 150 is formed during the step of selectively etching the insulating layer 124 (insulating material), an etchant and etching method are selected that allow etching of the insulating layers 112 and 124 to proceed relative to the insulating layers 111 and 113. For example, the insulating layers 111 and 113 may be made of the same material, and the insulating layers 112 and 124 may be made of the same material that is different from the insulating layers 111 and 113. For example, when silicon oxide is used for the insulating layers 111 and 113 and silicon nitride is used for the insulating layers 112 and 124, the groove 150 can be formed while selectively etching the insulating layer 124 (insulating material) by chemical etching using a CF-based gas or phosphoric acid. For example, when silicon nitride is used for the insulating layers 111 and 113 and silicon oxide is used for the insulating layers 112 and 124, the groove 150 can be formed while selectively etching the insulating layer 124 (insulating material) by chemical etching using hydrofluoric acid. The length D1 can be controlled by controlling the etchant, the etching method, and the film thickness when forming the insulating layer 112.

[0054] 11 and subsequent steps may be the same as those shown in FIG. 7(a) and subsequent steps, and therefore will not be described here. The groove 150 may be formed in the step shown in FIG. 11, but is not limited to this. As described above, the groove 150 may be formed in the step shown in FIG. 10(a) (FIG. 6(a)), or may be formed before depositing the conductive layer 121, or may be formed in the step shown in FIG. 8(a) in which the conductive layer 123 is selectively etched relative to the insulating layer 110.

[0055] Fig. 12 is a cross-sectional view taken along line CC' in Fig. 1, showing a light emitting device 100 including a light emitting element 210 that is a modified example of the light emitting element 210 shown in Fig. 2. As shown in Fig. 12, the light emitting device 100 may include a light emitting element 210 having conductive layers 123 with different film thicknesses depending on the emission wavelength. Since the other configurations may be similar to those of the light emitting device 100 and light emitting element 210 described above, the following description will focus on the different configurations, and descriptions of configurations that may be similar will be omitted as appropriate.

[0056] 12, electrode 120 of light-emitting element 210R emitting red light includes conductive layer 123R, electrode 120 of light-emitting element 210B emitting blue light includes conductive layer 123B, and electrode 120 of light-emitting element 210R emitting green light includes conductive layer 123R. In this case, the length of conductive layer 123R arranged in the light-emitting element 210R in the normal direction to main surface 220 of substrate 200 is different from the length of conductive layer 123B arranged in the light-emitting element 210B in the normal direction to main surface 220 of substrate 200. Furthermore, the length of conductive layer 123R arranged in the light-emitting element 210R in the normal direction to main surface 220 of substrate 200 is different from the length of conductive layer 123G arranged in the light-emitting element 210G in the normal direction to main surface 220 of substrate 200. Similarly, the length of conductive layer 123B arranged in light emitting element 210B in the direction normal to main surface 220 of substrate 200 and the length of conductive layer 123G arranged in light emitting element 210G in the direction normal to main surface 220 of substrate 200 are different from each other. The lengths of conductive layers 123R, 123B, and 123G in the direction normal to main surface 220 of substrate 200 can also be referred to as the film thicknesses of conductive layers 123R, 123B, and 123G. As shown in FIG. 12 , conductive layer 123R may have the thickest film thickness, followed by conductive layer 123R with conductive layer 123B having the thinnest film thickness.

[0057] As described above, by setting the film thickness of the conductive layer 123, which is a transparent electrode layer, to an appropriate value, it is possible to increase the luminous efficiency of the light-emitting element 210. In other words, the film thicknesses of the conductive layers 123R, 123B, and 123G can be selected from among thicknesses that can reinforce the emission wavelengths of the light-emitting elements 210R, 210B, and 210G.

[0058] The light-emitting device 100 shown in Fig. 12 can be realized by forming conductive layers 123R, 123B, and 123G for each of the light-emitting elements 210R, 210B, and 210G in a step subsequent to the step of forming a film of the conductive material for the conductive layer 123 shown in Fig. 7(a). For example, in the planarization step shown in Fig. 7(b) or the step of selectively etching the conductive layer 123 relative to the insulating layer 110 shown in Fig. 8(a), the etching amount is changed for each of the conductive layers 123R, 123B, and 123G. In this way, the light-emitting device 100 and the light-emitting element 210 shown in Fig. 12 can be manufactured.

[0059] Fig. 13 is a cross-sectional view taken along line CC' in Fig. 1, showing a light emitting device 100 including a light emitting element 210 that is a modified example of the light emitting element 210 shown in Fig. 9. As shown in Fig. 13, the light emitting device 100 may include a light emitting element 210 having insulating layers 124 with different film thicknesses depending on the emission wavelength. Since the other configurations may be similar to those of the light emitting device 100 and light emitting element 210 described above, the following description will focus on the different configurations, and descriptions of configurations that may be similar will be omitted as appropriate.

[0060] 13, electrode 120 of light emitting element 210R that emits red light includes insulating layer 124R, electrode 120 of light emitting element 210B that emits blue light includes insulating layer 124B, and electrode 120 of light emitting element 210R that emits green light includes insulating layer 124R. In this case, the length of insulating layer 124R arranged in the light emitting element 210R in the normal direction to main surface 220 of substrate 200 is different from the length of insulating layer 124B arranged in the light emitting element 210B in the normal direction to main surface 220 of substrate 200. Furthermore, the length of insulating layer 124R arranged in the light emitting element 210R in the normal direction to main surface 220 of substrate 200 is different from the length of insulating layer 124G arranged in the light emitting element 210G in the normal direction to main surface 220 of substrate 200. Similarly, the length of insulating layer 124B arranged in light emitting element 210B in the direction normal to main surface 220 of substrate 200 is different from the length of insulating layer 124G arranged in light emitting element 210G in the direction normal to main surface 220 of substrate 200. The lengths of insulating layers 124R, 124B, and 124G in the direction normal to main surface 220 of substrate 200 can also be referred to as the film thicknesses of insulating layers 124R, 124B, and 124G. As shown in FIG. 13 , insulating layer 124R may have the thickest film thickness, followed by insulating layer 124R with insulating layer 124B having the thinnest film thickness.

[0061] As described above, the light emitting efficiency of the light emitting element 210 can be increased by setting the thickness of the insulating layer 124 to an appropriate value. In other words, the thicknesses of the insulating layers 124R, 124B, and 124G can be selected from thicknesses that allow the emission wavelengths of the light emitting elements 210R, 210B, and 210G to be constructive with each other.

[0062] The light-emitting device 100 shown in Fig. 13 can be realized by, for example, forming insulating layers 124R, 124B, and 124G for each of the light-emitting elements 210R, 210B, and 210G in a step subsequent to the step of depositing the insulating material for the insulating layer 124 shown in Fig. 9(a). For example, in the planarization step shown in Fig. 11 or the step of selectively etching the insulating layer 124 relative to the insulating layer 110, the etching amount is changed for each of the insulating layers 124R, 124B, and 124G. In this way, the light-emitting device 100 and the light-emitting element 210 shown in Fig. 13 can be manufactured.

[0063] FIG. 14 is a cross-sectional view taken along line A-A' in FIG. 1 and illustrates a modification of the light-emitting element 210 illustrated in FIG. 2. Compared to the light-emitting element 210 illustrated in FIG. 2, the light-emitting element 210 illustrated in FIG. 14 has a surface 125 of the electrode 120 with a central portion recessed more toward the main surface 220 of the substrate 200 than the other portions. For example, as illustrated in FIG. 14, the conductive layer 122 of the electrode 120 is formed so that the central portion is recessed more toward the main surface 220 of the substrate 200 than the other portions. Accordingly, the surface 125 of the electrode 120, which is the upper surface of the conductive layer 123, also has a concave shape. Similarly, the upper surface of the organic layer 130 including the organic functional layer 131 and the light-emitting layer 132 and the portion of the upper surface of the electrode 140 that is disposed on the electrode 120 may also have a concave shape, as illustrated in FIG. 14. Other configurations may be similar to those of the light-emitting element 210 described above. Therefore, the following description will focus on the different configurations, and descriptions of similar configurations will be omitted as appropriate.

[0064] As described above, the conductive layer 122 functions as a reflective metal layer. Light emitted from the light-emitting layer 132 and traveling in the direction of the electrode 120 is reflected by the conductive layer 122, which functions as a reflective metal layer, and is extracted from the light-emitting element 210. The upper surface of the conductive layer 122, which functions as a reflective metal layer, has a concave shape recessed toward the main surface 220 of the substrate 200, thereby preventing the light reflected by the conductive layer 122 from traveling outward from the light-emitting element 210. As a result, the luminous efficiency of the light-emitting device 100 can be improved.

[0065] 14, in the process subsequent to the process of depositing the conductive material of the conductive layer 122 shown in Fig. 5(b), the conditions for the planarization process shown in Fig. 6(a) and the process of etching the conductive layer 122 shown in Fig. 6(b) are adjusted to appropriate conditions. As a result, the upper surface of the conductive layer 122 can be formed into a concave shape recessed toward the main surface 220 of the substrate 200.

[0066] 14 , the length T1 may be the film thickness in the normal direction to the main surface 220 of the organic functional layer 131, which is disposed at the geometric center of gravity of the electrode 120 in orthogonal projection onto the main surface 220 of the substrate 200. Similarly, the length T2 may be the film thickness in the normal direction to the main surface 220 of the organic layer 130, excluding the organic functional layer 131, which is disposed at the geometric center of gravity of the electrode 120 in orthogonal projection onto the main surface 220 of the substrate 200.

[0067] Here, application examples in which the light emitting device 100 of this embodiment is applied to an image forming device, a display device, a photoelectric conversion device, an electronic device, a lighting device, a mobile object, and a wearable device will be described using Figures 15(a) and 15(b) to Figures 23(a) and 23(b). The light emitting device 100 will be described assuming that the light emitting element 210 (hereinafter, may be referred to as a pixel or a sub-pixel) is an organic light emitting element (OLED) such as an organic EL element using an organic light emitting material. First, details of each component of the light emitting element 210 in the light emitting device 100 will be shown, and then application examples will be described.

[0068] An organic light-emitting device according to one embodiment of the present invention has a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first electrode and the second electrode is an anode and the other is a cathode. In the organic light-emitting device of this embodiment, the organic compound layer may be a single layer or a laminate consisting of multiple layers, as long as it has an emitting layer. If the organic compound layer is a laminate consisting of multiple layers, the organic compound layer may include, in addition to the emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, an electron injection layer, etc. The emitting layer may also be a single layer or a laminate consisting of multiple layers. If the emitting layer is a multi-layer, a charge generation layer may be disposed between the emitting layers. The charge generation layer may be composed of a compound having a lower LUMO than the hole transport layer, and the LUMO of the charge generation layer may be lower than the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer may be the molecular orbital energy of the organic compound having the largest weight ratio in the organic compound layer.

[0069] Here, the closer the HOMO and LUMO are to the vacuum level, the higher they are described as being. The LUMO of the charge generation layer being lower than the HOMO of the hole transport layer means that the LUMO of the charge generation layer is closer to the vacuum level than the HOMO of the hole transport layer.

[0070] In this specification, the HOMO and LUMO can be calculated using molecular orbital calculations. The molecular orbital calculations are performed using density functional theory (DFT) or the like, with the functional being B3LYP and the basis set being 6-31G. *It is also the case that the range of graphical designs is Gaussian09(Gaussian09). ,RevisionC.01,MJFrisch,GWTrucks,HBSchlegel,GEScus area, MARobb, JRCheeseman, G. Scalmani, V. Barone, B. Mennucci, G. Petersson, H. Nakatsuji, M. Caricato, X. Li, HPHr atchian, AFIzmaylov, J. Bloino, G. Zheng, JLSonnenberg, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ish ida,T.Nakajima,Y.Honda,O.Kitao,H.Nakai,T.Vreven,JAMontgomery,Jr.,JEPeralta,F.Ogliaro,M.Bearpark,JJH eyd, E. Brothers, KNKudin, VNStaroverov, T. Keith, R. Kobayashi, J. Normand, K. Raghavachari, A. Rendell, JCBuran t,SSIyengar,J.Tomasi,M.Cossi,N.Rega,JMMillam,M.Klene,JEKnox,JBCross,V.Bakken,C.Adamo,J.Jaramillo,R. Gomperts,REStratmann,O.Yazyev,AJAustin,R.Cammi,C.Pomelli,JWOchterski,RLMartin,K.Morokuma,VGZakrzews ki,GAVoth,P.Salvador,JJDannenberg,S.Dapprich,ADDaniels,O.Farkas,JBForesman,JVOrtiz,JCioslowski,and DJFox,Gaussian,Inc.,Wallingford CT,2010.)

[0071] The HOMO and LUMO in this specification can be calculated using the ionization potential and band gap. The HOMO can be estimated by measuring the ionization potential. The ionization potential can be measured by dissolving the compound to be measured in a solvent such as toluene and using a measuring device such as an AC-3. The band gap can be measured by dissolving the compound to be measured in a solvent such as toluene and irradiating it with excitation light. The band gap can be measured by measuring the absorption edge of the excitation light. Alternatively, the compound to be measured can be deposited on a substrate such as glass and irradiated with excitation light on the deposited film. The band gap can be measured by measuring the absorption edge of the absorption spectrum where the deposited film absorbs the excitation light.

[0072] The LUMO can be calculated using the band gap and ionization potential: subtracting the ionization potential from the band gap gives the LUMO.

[0073] The LUMO can also be estimated from the reduction potential. For example, the one-electron reduction potential can be estimated using CV (cyclic volmetry) measurements. CV measurements are performed, for example, in a 0.1 M tetrabutylammonium perchlorate solution in DMF, with an Ag / Ag reference electrode. + The LUMO can be estimated by adding -4.8 eV, the difference between the reduction potential of the compound and that of ferrocene, to the reduction potential of the compound obtained.

[0074] When the organic compound according to this embodiment is included in the light-emitting layer, the light-emitting layer may be composed solely of the organic compound according to this embodiment, or may be composed of the organometallic complex according to this embodiment and other compounds. When the light-emitting layer is composed of the organometallic complex according to this embodiment and other compounds, the organic compound according to this embodiment may be used as a host or a guest in the light-emitting layer. It may also be used as an assist material that can be included in the light-emitting layer. Here, the host is the compound with the largest mass ratio among the compounds that constitute the light-emitting layer. The guest is the compound that is smaller in mass ratio than the host among the compounds that constitute the light-emitting layer and is responsible for the primary emission of light. The assist material is the compound that is smaller in mass ratio than the host among the compounds that constitute the light-emitting layer and assists the guest in emitting light. The assist material is also called a second host. The host material can also be called the first compound, and the assist material can also be called the second compound.

[0075] When the organic compound according to one embodiment of the present invention is used as a guest in the light-emitting layer, the concentration of the guest may be 0.01% by mass or more and 20% by mass or less, or even 0.1% by mass or more and 10% by mass or less, based on the total mass of the light-emitting layer. The guest is also called a dopant.

[0076] The organometallic complex according to this embodiment can be used as a constituent material of an organic compound layer other than the light-emitting layer that constitutes the organic light-emitting device of this embodiment. Specifically, it may be used as a constituent material of an electron transport layer, an electron injection layer, a hole transport layer, a hole injection layer, a hole blocking layer, etc. In this case, the emission color of the organic light-emitting device is not limited to red. More specifically, it may emit white light or an intermediate color.

[0077] If necessary, conventionally known low-molecular-weight and high-molecular-weight hole-injecting or hole-transporting compounds, host compounds, light-emitting compounds, electron-injecting or electron-transporting compounds, etc. may be used together. Examples of these compounds are listed below.

[0078] Suitable hole injection and transport materials are those with high hole mobility that facilitates hole injection from the anode and transports the injected holes to the light-emitting layer. Furthermore, materials with high glass transition temperatures are suitable to reduce film quality degradation, such as crystallization, in organic light-emitting devices. Examples of low-molecular-weight and high-molecular-weight materials with hole injection and transport properties include triarylamine derivatives, arylcarbazole derivatives, phenylenediamine derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, poly(vinylcarbazole), poly(thiophene), and other conductive polymers. Furthermore, the above-mentioned hole injection and transport materials are also suitable for use in electron blocking layers. Specific examples of compounds that can be used as hole injection and transport materials are listed below, but are not limited to these.

[0079] [ka]

[0080] Among the hole transport materials listed above, HT16 to HT18 can reduce the driving voltage when used in a layer in contact with the anode. HT16 is widely used in organic light-emitting devices. HT2, HT3, HT4, HT5, HT6, HT10, and HT12 may be used in an organic compound layer adjacent to HT16. Furthermore, multiple materials may be used in one organic compound layer.

[0081] Examples of luminescent materials that are mainly involved in luminescence function include fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, anthracene derivatives, rubrene, etc.), quinacridone derivatives, coumarin derivatives, stilbene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, iridium complexes, platinum complexes, rhenium complexes, copper complexes, europium complexes, ruthenium complexes, and polymer derivatives such as poly(phenylenevinylene) derivatives, poly(fluorene) derivatives, and poly(phenylene) derivatives.

[0082] Specific examples of compounds that can be used as light-emitting materials are shown below, but the present invention is not limited to these.

[0083] [ka]

[0084] [ka]

[0085] When the light-emitting material is a hydrocarbon compound, it is suitable because it can reduce the decrease in light-emitting efficiency due to exciplex formation and the decrease in color purity due to the change in the emission spectrum of the light-emitting material due to exciplex formation.

[0086] Hydrocarbon compounds are compounds composed only of carbon and hydrogen, and among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are mentioned.

[0087] When the light-emitting material is a fused polycyclic ring containing a five-membered ring, it is suitable because it has a high ionization potential, is resistant to oxidation, and forms a device with a long durability and life. Among the above-mentioned exemplary compounds, BD7, BD8, GD5 to GD9, and RD1 are examples.

[0088] Examples of the light-emitting layer host or light-emitting assist material contained in the light-emitting layer include aromatic hydrocarbon compounds or derivatives thereof, as well as carbazole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, organoaluminum complexes such as tris(8-quinolinolato)aluminum, and organic beryllium complexes.

[0089] Specific examples of compounds that can be used as the light-emitting layer host or light-emitting assist material contained in the light-emitting layer are shown below, but the present invention is not limited to these.

[0090] [ka]

[0091] The host material may be a hydrocarbon compound. A hydrocarbon compound is a compound composed only of carbon and hydrogen, and examples of the above-mentioned compounds include EM1 to EM12 and EM16 to EM27. From the viewpoint of stability, host materials that do not have a carbon-heteroatom bond in the single bond connecting the aryl group units in their structure, such as F3 in Compound 1, are more suitable.

[0092] The electron transporting material can be arbitrarily selected from those capable of transporting electrons injected from the cathode to the light-emitting layer, and is selected taking into consideration the balance with the hole mobility of the hole transporting material, etc. Examples of materials having electron transport properties include oxadiazole derivatives, oxazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, organoaluminum complexes, and fused ring compounds (e.g., fluorene derivatives, naphthalene derivatives, chrysene derivatives, anthracene derivatives, etc.). Furthermore, the above electron transporting materials are also suitable for use in hole-blocking layers.

[0093] Specific examples of compounds that can be used as electron transporting materials are shown below, but the present invention is not limited to these.

[0094] [ka]

[0095] The electron injection material can be selected from those that allow easy electron injection from the cathode, taking into consideration the balance with hole injection properties. Organic compounds include n-type dopants and reducing dopants. Examples include compounds containing alkali metals such as lithium fluoride, lithium complexes such as lithium quinolinol, benzimidazolidene derivatives, imidazolidene derivatives, fulvalene derivatives, and acridine derivatives.

[0096] It can also be used in combination with the above electron transport material.

[0097] Structure of organic light-emitting element The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer and the color filter. The planarizing layer may be made of an acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0098] substrate Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. The substrate may also include switching elements such as transistors and wiring patterns, with an insulating layer provided thereon. The insulating layer may be made of any material as long as it allows contact holes to be formed so that wiring patterns can be formed between the first electrode and the substrate, and insulation from unconnected wiring patterns is ensured. For example, the insulating layer may be made of a resin such as polyimide, silicon oxide, silicon nitride, or the like.

[0099] electrode A pair of electrodes can be used as the electrodes. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0100] The anode may be made of a material with a high work function. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, mixtures containing these metals, alloys of these metals, and metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and zinc indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used as the anode.

[0101] These electrode materials may be used alone or in combination of two or more. The anode may be composed of one layer or multiple layers.

[0102] When the electrode is used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys thereof, or laminates thereof can be used. The above materials can also function as a reflective film without functioning as an electrode. Furthermore, when a transparent electrode is used as the electrode, a transparent conductive oxide layer such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0103] On the other hand, a material with a low work function may be selected as the cathode material. Examples include simple metals such as alkali metals (e.g., lithium), alkaline earth metals (e.g., calcium), aluminum, titanium, manganese, silver, lead, and chromium, as well as mixtures containing these metals. Alternatively, alloys combining these simple metals may be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver may be used. Metal oxides such as indium tin oxide (ITO) may also be used. These electrode materials may be used alone or in combination. The cathode may have a single-layer or multi-layer structure. Silver may be used as the cathode, and a silver alloy may be used to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the silver:other metal ratio may be 1:1 or 3:1.

[0104] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using a DC or AC sputtering method, for example, can provide good coverage of the formed film and reduce the resistance of the cathode.

[0105] Pixel isolation layer The pixel separation layer may be formed of silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) formed using a chemical vapor deposition (CVD) method. To increase the in-plane resistance of the organic compound layer, the thickness of the organic compound layer, particularly the hole transport layer, may be thinned on the sidewalls of the pixel separation layer. Specifically, the thickness of the organic compound layer on the sidewalls can be thinned by increasing the taper angle of the sidewalls of the pixel separation layer or the thickness of the pixel separation layer, thereby increasing vignetting during deposition.

[0106] On the other hand, the sidewall taper angle and film thickness of the pixel separation layer can be adjusted to the extent that voids are not formed in the protective layer formed thereon. By preventing voids from being formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration of reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

[0107] According to this embodiment, charge leakage to adjacent pixels can be effectively suppressed even if the taper angle of the sidewall of the pixel separation layer is not steep. As a result of this study, it was found that charge leakage can be sufficiently reduced if the taper angle is between 60 degrees and 90 degrees. The thickness of the pixel separation layer may be between 10 nm and 150 nm. Similar effects can also be achieved even if the pixel separation layer is composed only of pixel electrodes without a pixel separation layer. However, in this case, short circuits in organic light-emitting elements can be reduced by making the thickness of the pixel electrode less than half that of the organic layer or by making the edge of the pixel electrode forward tapered at less than 60 degrees.

[0108] Furthermore, even when the first electrode is a cathode and the second electrode is an anode, a wide color gamut and low-voltage operation are possible by forming an electron transport material and a charge transport layer, and an emitting layer on the charge transport layer.

[0109] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. When multiple layers are present, they may be referred to as hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc., depending on their functions. The organic compound layer is primarily composed of organic compounds but may also contain inorganic atoms or compounds. The organic compound layer may contain, for example, copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode. When multiple light-emitting layers are present, a charge generation section may be disposed between the first and second light-emitting layers. The charge generation section may contain an organic compound having a lowest unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. The same applies when a charge generation section is disposed between the second and third light-emitting layers.

[0110] protective layer A protective layer may be provided on the cathode. For example, by adhering glass with a moisture absorbent on the cathode, the penetration of moisture and other contaminants into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation layer such as silicon nitride may be provided on the cathode to reduce the penetration of moisture and other contaminants into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm-thick silicon nitride may be formed by CVD to serve as a protective layer. After forming the protective layer by CVD, a protective layer may be formed by atomic layer deposition (ALD). The material of the protective layer formed by ALD is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by CVD on the protective layer formed by ALD. The protective layer formed by ALD may have a thickness smaller than that of the protective layer formed by CVD. Specifically, the thickness of the protective layer formed by ALD may be 50% or less, or even 10% or less, of the protective layer formed by CVD.

[0111] Color filters A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate, and the substrate on which the color filter is formed may be bonded to the substrate on which the organic light-emitting element is provided. Alternatively, for example, a color filter may be patterned on the above-mentioned protective layer using photolithography technology. The color filter may be made of a polymer.

[0112] planarization layer A planarization layer may be disposed between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the layers below the planarization layer. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight. In consideration of reducing the unevenness, a high molecular weight organic compound may be used for the planarization layer.

[0113] The planarization layers may be provided above and below the color filter. In this case, the constituent materials of the planarization layers may be the same or different. Specific examples of the material for the planarization layer include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0114] Microlenses The organic light-emitting device may have an optical component such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be determined in the same way in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between this tangent and the semicircle is the vertex of the microlens.

[0115] It is also possible to define the midpoint of a microlens. In the cross section of the microlens, a line segment is imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0116] The microlens has a first surface having a convex portion and a second surface opposite the first surface. The second surface can be disposed closer to the functional layer (light-emitting layer) than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting device. If the functional layer is an organic layer, high-temperature processes can be avoided in the microlens manufacturing process. Furthermore, if the second surface is disposed closer to the functional layer than the first surface, the glass transition temperatures of the organic compounds constituting the organic layer may all be 100°C or higher, and are preferably, for example, 130°C or higher.

[0117] Counter substrate An opposing substrate may be disposed on the planarization layer. The opposing substrate is called an opposing substrate because it is provided at a position corresponding to the aforementioned substrate. The opposing substrate may be made of the same material as the aforementioned substrate. When the aforementioned substrate is defined as a first substrate, the opposing substrate may be a second substrate.

[0118] organic layer The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to an embodiment of the present disclosure may be formed by the following method.

[0119] The organic compound layer constituting the organic light-emitting device according to the embodiment of the present disclosure can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively to the dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0120] Here, when a layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When a film is formed by a coating method, the film can be formed by combining it with an appropriate binder resin.

[0121] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0122] These binder resins may be used singly or in combination as homopolymers or copolymers, and may further contain known additives such as plasticizers, antioxidants, and ultraviolet absorbers, as needed.

[0123] Pixel circuit The light-emitting device may have a pixel circuit connected to the light-emitting element. The pixel circuit may be an active matrix type that controls the emission of the first light-emitting element and the second light-emitting element independently. The active matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the emission brightness of the light-emitting element, a transistor that controls the emission timing, a capacitor that holds the gate voltage of the transistor that controls the emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0124] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be lower than the mobility of a transistor constituting the display control circuit.

[0125] The slope of the current-voltage characteristics of the transistors that make up the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors that make up the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristics.

[0126] The transistors that make up the pixel circuit are transistors connected to the light-emitting elements, such as the first light-emitting element.

[0127] pixel An organic light emitting device includes a plurality of pixels, each of which includes sub-pixels that emit different colors, for example, RGB colors.

[0128] A pixel has an area called a pixel aperture that emits light. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0129] The spacing between the subpixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, or 6.4 μm.

[0130] The pixels may be arranged in a known manner in a plan view. For example, they may be in a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in a plan view may be any known shape. For example, they may be rectangular, quadrilaterals such as diamonds, or hexagons. Of course, a shape that is close to a rectangle, rather than an exact shape, is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0131] Uses of organic light-emitting devices according to embodiments of the present disclosure The organic light-emitting device according to the embodiment of the present disclosure can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, or a light-emitting device having a white light source and a color filter.

[0132] The display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, linear CCD, memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.

[0133] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. The display device may also be used in the display unit of a multifunction printer.

[0134] Next, further explanation will be given with reference to the drawings. Fig. 15(a) shows an example of a pixel arranged in the light-emitting device 100. The pixel has sub-pixels 810 (light-emitting elements 210). The sub-pixels are divided into 810R, 810G, and 810B based on the light emitted from the sub-pixels. The emitted colors may be distinguished by the wavelength of light emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted using a color filter or the like. Each sub-pixel has a reflective electrode 802 as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the edge of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 as a second electrode, a protective layer 806, and a color filter 807.

[0135] A transistor and a capacitor may be disposed below or inside the interlayer insulating layer 801. The transistor and the first electrode may be electrically connected via a contact hole (not shown) or the like.

[0136] The insulating layer 803 may also be called a bank or a pixel separation film. The insulating layer 803 covers the edges of the first electrodes and is disposed to surround the first electrodes. The portions of the first electrodes not covered by the insulating layer 803 come into contact with the organic compound layer 804 and become light-emitting regions.

[0137] The organic compound layer 804 includes a hole injection layer 841 , a hole transport layer 842 , a first light-emitting layer 843 , a second light-emitting layer 844 , and an electron transport layer 845 .

[0138] The second electrode may be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0139] The protective layer 806 reduces the penetration of moisture into the organic compound layer. Although the protective layer is illustrated as a single layer, it may be a multi-layer structure. Each layer may be an inorganic compound layer and an organic compound layer.

[0140] The color filters 807 are divided into 807R, 807G, and 807B depending on their colors. The color filters may be formed on a planarization film (not shown). A resin protective layer (not shown) may be disposed on the color filters. The color filters may be formed on a protective layer 806. The color filters may be provided on an opposing substrate such as a glass substrate and then bonded thereto.

[0141] A display device 800 in FIG. 15(b) (corresponding to the light-emitting device 100 described above) includes an organic light-emitting element 826 and a TFT 818 as an example of a transistor. A substrate 811 made of glass, silicon, or the like is provided with an insulating layer 812 thereon. An active element such as the TFT 818 is disposed on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are disposed on the insulating layer. The TFT 818 also includes the semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on the top of the TFT 818. An anode 821 constituting the organic light-emitting element 826 and the source electrode 817 are connected via a contact hole 820 provided in the insulating film.

[0142] The electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 826 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the embodiment shown in Figure 15(b). In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode. TFT stands for thin film transistor.

[0143] 15(b), the organic compound layer is illustrated as a single layer, but the organic compound layer 822 may be a multi-layer structure. A first protective layer 824 and a second protective layer 825 are provided on the cathode 823 to reduce deterioration of the organic light-emitting element.

[0144] In the display device 800 of FIG. 15(b), transistors are used as switching elements, but other switching elements may be used instead.

[0145] Furthermore, the transistors used in the display device 800 of Fig. 15(b) are not limited to transistors using single-crystal silicon wafers, but may also be thin-film transistors having an active layer on the insulating surface of a substrate. Examples of active layers include non-single-crystal silicon such as single-crystal silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Thin-film transistors are also called TFT elements.

[0146] The transistors included in the display device 800 of Figure 15(b) may be formed within a substrate such as a silicon substrate. Here, "formed within a substrate" means that the substrate itself, such as a silicon substrate, is processed to form the transistors. In other words, having a transistor within a substrate can be seen as the substrate and the transistor being formed integrally.

[0147] The organic light-emitting element according to this embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element. By providing multiple organic light-emitting elements on a surface, an image can be displayed based on the respective light emission brightnesses. Here, the switching element according to this embodiment is not limited to a TFT, but may also be a transistor formed from low-temperature polysilicon or an active matrix driver formed on a substrate such as a silicon substrate. "On the substrate" can also be referred to as "inside the substrate." Whether to provide a transistor in the substrate or to use a TFT is determined by the size of the display unit. For example, if the size is about 0.5 inches, the organic light-emitting element may be provided on a silicon substrate.

[0148] 16(a) to 16(c) are schematic diagrams showing an example of an image forming apparatus using the light emitting device 100 of this embodiment. The image forming apparatus 926 shown in Fig. 16(a) includes a photosensitive member 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer unit 932, a transport unit 933 (the transport roller in the configuration of Fig. 16(a)), and a fixing unit 935.

[0149] Light 929 is emitted from an exposure light source 928, and an electrostatic latent image is formed on the surface of a photoconductor 927. The light emitting device 100 can be applied to this exposure light source 928. A developing unit 931 contains toner or the like as a developer and can function as a developing device that applies the developer to the exposed photoconductor 927. A charging unit 930 charges the photoconductor 927. A transfer unit 932 transfers the developed image to a recording medium 934. A transport unit 933 transports the recording medium 934. The recording medium 934 can be, for example, paper or film. A fixing unit 935 fixes the image formed on the recording medium.

[0150] 16(b) and 16(c) are schematic diagrams showing an exposure light source 928 in which a plurality of light-emitting sections 936 are arranged along the longitudinal direction of a long substrate. The light-emitting device 100 can be applied to this light-emitting section 936. That is, a plurality of pixels (light-emitting elements 210) are arranged along the longitudinal direction of the substrate. A direction 937 is parallel to the axis of the photosensitive member 927. This column direction is the same as the axial direction of the photosensitive member 927 when it rotates. This direction 937 can also be called the long axis direction of the photosensitive member 927.

[0151] FIG. 16(b) shows a configuration in which the light-emitting units 936 are arranged along the longitudinal direction of the photosensitive element 927. FIG. 16(c) shows a modified configuration of the arrangement of the light-emitting units 936 shown in FIG. 16(b), in which the light-emitting units 936 are arranged alternately in the column direction in the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction in the first and second columns. In the first column, multiple light-emitting units 936 are arranged at intervals, and in the second column, light-emitting units 936 are arranged at positions corresponding to the gaps between the light-emitting units 936 in the first column. Multiple light-emitting units 936 are also arranged at intervals in the row direction. The arrangement of the light-emitting units 936 shown in FIG. 16(c) can be described as, for example, a grid-like arrangement, a houndstooth arrangement, or a checkerboard pattern.

[0152] FIG. 17 is a schematic diagram illustrating an example of a display device using the light-emitting device 100 of this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. A control circuit including a logic circuit configured with transistors and the like is disposed on the circuit board 1007. The battery 1008 may not be disposed if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be disposed in this position. The light-emitting device 100 can be applied to the display panel 1005. The pixels (light-emitting elements 210) disposed on the light-emitting device 100 functioning as the display panel 1005 are connected to and operate with the control circuit disposed on the circuit board 1007.

[0153] The display device 1000 shown in FIG. 17 may be used as a display unit of a photoelectric conversion device (which may also be called an imaging device) that has an optical unit with multiple lenses and an imaging element that receives light that has passed through the optical unit and photoelectrically converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the photoelectric conversion device or a display unit located within a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0154] FIG. 18 is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device 100 of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be called an imaging device. The light-emitting device 100 of this embodiment can be applied to the viewfinder 1101 or the rear display 1102, which are display units. In this case, the light-emitting device 100 may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0155] Since the timing suitable for capturing an image is often very short, it is better to display information as soon as possible. Therefore, a light emitting device 100 in which pixels (light emitting elements 210) including light emitting elements using an organic light emitting material such as an organic EL element are arranged may be used in a viewfinder 1101 or a rear display 1102. This is because organic light emitting materials have a fast response speed. A light emitting device 100 using an organic light emitting material is more suitable than a liquid crystal display device for these devices, which require a high display speed.

[0156] The photoelectric conversion device 1100 has an optical section (not shown). The optical section has multiple lenses, which form an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives light that has passed through the optical section. The focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0157] The light emitting device 100 may be applied to a display unit of an electronic device. In this case, the light emitting device 100 may have both a display function and an operation function. Examples of the portable terminal include a mobile phone such as a smartphone, a tablet, and a head-mounted display.

[0158] FIG. 19 is a schematic diagram showing an example of an electronic device using the light-emitting device 100 of this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint to perform unlocking, etc. A portable device having a communication unit can also be called a communication device. The light-emitting device 100 of this embodiment can be applied to the display unit 1201.

[0159] 20(a) and 20(b) are schematic diagrams illustrating an example of a display device using the light-emitting device 100 of this embodiment. FIG. 20(a) illustrates a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The light-emitting device 100 of this embodiment can be applied to the display unit 1302. The display device 1300 may have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in FIG. 20(a). For example, the bottom edge of the frame 1301 may also serve as the base 1303. The frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0160] FIG. 20(b) is a schematic diagram illustrating another example of a display device using the light-emitting device 100 of this embodiment. The display device 1310 of FIG. 20(b) is configured to be bendable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 100 of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display unit without any joints. The first display unit 1311 and the second display unit 1312 can be separated by the bending point. The first display unit 1311 and the second display unit 1312 may display different images, or the first display unit and the second display unit 1312 may display a single image.

[0161] FIG. 21 is a schematic diagram illustrating an example of an illumination device using the light-emitting device 100 of this embodiment. The illumination device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 100 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse light from the light source, such as for lighting, and deliver the light over a wide area. If necessary, a cover may be provided on the outermost part. The illumination device 1400 may include both the optical film 1404 and the light diffusion unit 1405, or only one of them.

[0162] The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, daylight white, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device 1400 may have a power supply circuit connected to the light emitting device 100 that functions as the light source 1402. The power supply circuit is a circuit that converts AC voltage into DC voltage. White has a color temperature of 4200K, and daylight white has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat sink. The heat sink dissipates heat from within the device to the outside, and examples of the heat sink include metal with a high specific heat, liquid silicon, etc.

[0163] FIG. 22 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light emitting device 100 of this embodiment. The automobile 1500 may have a tail lamp 1501 that is turned on when the brakes are applied, for example. The light emitting device 100 of this embodiment may be used as a headlamp as a vehicle lamp. An automobile is an example of a mobile body, and the mobile body may be a ship, a drone, an aircraft, a railcar, an industrial robot, or the like. The mobile body may have a body and a lamp provided thereon. The lamp may indicate the current location of the body.

[0164] The light emitting device 100 of this embodiment can be applied to a tail lamp 1501. The tail lamp 1501 may have a protective member that protects the light emitting device 100 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but may be made of polycarbonate or the like. The protective member may also be made by mixing a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like with polycarbonate.

[0165] The automobile 1500 may have a body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display such as a head-up display. The light-emitting device 100 of this embodiment may be used in the transparent display. In this case, the constituent materials of the electrodes and the like of the light-emitting device 100 are made of transparent materials.

[0166] 23(a) and 23(b), a further application example of the light emitting device 100 of this embodiment will be described. The light emitting device 100 can be applied to systems that can be worn as a wearable device, such as smart glasses, a head-mounted display (HMD), or smart contact lenses. An image capturing and displaying device used in such an application example has an image capturing device capable of photoelectrically converting visible light and a light emitting device capable of emitting visible light.

[0167] 23(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, the light emitting device 100 of this embodiment is provided on the back side of the lens 1601.

[0168] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the light emitting device 100 according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the light emitting device 100. The lens 1601 is formed with an optical system for focusing light onto the image capture device 1602.

[0169] FIG. 23(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 include a control device 1612, which is equipped with an imaging device corresponding to the imaging device 1602 and a light-emitting device 100. A lens 1611 includes an optical system for projecting light emitted from the imaging device in the control device 1612 and the light-emitting device 100, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the imaging device and the light-emitting device 100 and controls the operation of the imaging device and the light-emitting device 100. The control device 1612 may also include a gaze detection unit that detects the gaze of the wearer. Infrared light may be used for gaze detection. The infrared light-emitting unit emits infrared light toward the eyeball of a user gazing at a displayed image. An imaging unit having a light-receiving element detects the emitted infrared light reflected from the eyeball, thereby obtaining an image of the eyeball. By providing a reduction means for reducing the amount of light from the infrared light emitting section to the display section in a plan view, degradation of image quality is reduced.

[0170] The gaze of the user relative to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be used for gaze detection using the image of the eyeball. As an example, a gaze detection method based on the Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0171] More specifically, gaze detection processing is performed based on the pupil-corneal reflex method, which calculates a gaze vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0172] The light emitting device 100 according to the embodiment of the present disclosure may include an imaging device having a light receiving element, and may control the display image based on user line of sight information from the imaging device.

[0173] Specifically, the light emitting device 100 determines a first field of view area where the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the light emitting device 100, or may be determined by an external control device and received. In the display area of ​​the light emitting device 100, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0174] The display area includes a first display area and a second display area different from the first display area, and a high-priority area is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the light-emitting device 100, or may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of areas other than the high-priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0175] Note that AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as training data an image of the eyeball and the actual direction in which the eyeball in the image was looking. The AI ​​program may be included in the light-emitting device 100, the imaging device, or an external device. If included in an external device, it is transmitted to the light-emitting device 100 via communication.

[0176] When display control is performed based on visual recognition detection, the smart glasses can be applied to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0177] The disclosure of this specification includes the following light-emitting device, display device, photoelectric conversion device, electronic device, lighting device, mobile object, and method for manufacturing a light-emitting device.

[0178] (Item 1) A light emitting device comprising a plurality of light emitting elements arranged on a main surface of a substrate, Each of the plurality of light-emitting elements a first electrode disposed in a recess provided in an insulating layer disposed on the main surface; an organic layer disposed so as to cover the insulating layer and the first electrode, the organic layer including a light-emitting layer and an organic functional layer disposed between the light-emitting layer and the first electrode; a second electrode disposed so as to cover the organic layer; a groove is provided in a portion of a sidewall of the recess that is farther from the main surface than the surface of the first electrode; a portion of the insulating layer that is farther from the main surface than the surface of the first electrode does not overlap with the first electrode when orthogonally projected onto the main surface;

[0179] (Item 2) 2. The light emitting device according to item 1, wherein the groove is arranged so as to surround the first electrode in an orthogonal projection onto the main surface.

[0180] (Item 3) The light-emitting device described in item 1 or 2, characterized in that the organic functional layer includes a portion cut at the groove, or the film thickness of the portion covering the groove is thinner than the film thickness before and after the portion covering the groove.

[0181] (Item 4) the insulating layer includes a first insulating layer, a second insulating layer disposed between the first insulating layer and the main surface, and a third insulating layer disposed between the second insulating layer and the main surface; The light-emitting device according to any one of items 1 to 3, characterized in that the groove is formed on the sidewall by the second insulating layer being recessed in a direction parallel to the main surface more than the first insulating layer and the third insulating layer.

[0182] (Item 5) 5. The light emitting device according to item 4, wherein the second insulating layer includes a material different from the first insulating layer and the third insulating layer.

[0183] (Item 6) 6. The light emitting device according to item 4 or 5, wherein the second insulating layer contains a material having a higher etching rate than the first insulating layer and the third insulating layer in chemical etching using CF4 gas.

[0184] (Item 7) A light-emitting device described in any one of items 4 to 6, characterized in that the length in the normal direction of the main surface between the surface of the first electrode and the second insulating layer is greater than the length in the normal direction of the portion of the organic functional layer that contacts the first electrode.

[0185] (Item 8) A light-emitting device described in any one of items 4 to 7, characterized in that the length of the first insulating layer in the normal direction to the main surface is greater than the length of the portion of the organic functional layer that contacts the first electrode in the normal direction.

[0186] (Item 9) A light-emitting device described in any one of items 4 to 7, characterized in that the length of the second insulating layer in the normal direction of the main surface is greater than the length of the portion of the organic functional layer that contacts the first electrode in the normal direction.

[0187] (Item 10) A light-emitting device described in any one of items 4 to 8, characterized in that the length by which the first insulating layer protrudes from the second insulating layer on the side wall is greater than the length in the normal direction of the main surface of the portion of the organic functional layer that contacts the first electrode.

[0188] (Item 11) 11. The light-emitting device according to any one of items 1 to 10, wherein the organic functional layer includes at least one of a hole injection layer and a hole transport layer.

[0189] (Item 12) 12. The light-emitting device according to any one of items 1 to 11, wherein the length in the normal direction of the main surface between the surface of the first electrode and the portion of the side wall farthest from the main surface is smaller than the length in the normal direction of the portion of the organic layer excluding the organic functional layer that is arranged on the first electrode.

[0190] (Item 13) 13. The light emitting device according to any one of items 1 to 12, wherein the portion of the side wall excluding the groove has an inclination of 50° or more with respect to a direction parallel to the main surface.

[0191] (Item 14) The light-emitting device according to any one of items 1 to 13, characterized in that the first electrode includes a first conductive layer, a second conductive layer arranged between the first conductive layer and the main surface, and a third conductive layer arranged between the second conductive layer and the main surface.

[0192] (Item 15) the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, Item 15. The light-emitting device according to item 14, characterized in that the length in the normal direction of the main surface of the first conductive layer arranged in the first light-emitting element and the length in the normal direction of the first conductive layer arranged in the second light-emitting element are different from each other.

[0193] (Item 16) the first electrode further includes a fourth insulating layer disposed between the first conductive layer and the second conductive layer; Item 16. The light-emitting device according to item 14 or 15, wherein the first conductive layer and the second conductive layer are electrically connected by a conductor disposed in a through hole provided in the fourth insulating layer.

[0194] (Item 17) the plurality of light-emitting elements include a third light-emitting element and a fourth light-emitting element, Item 17. The light-emitting device according to item 16, wherein the length in the normal direction of the main surface of the fourth insulating layer arranged in the third light-emitting element and the length in the normal direction of the fourth insulating layer arranged in the fourth light-emitting element are different from each other.

[0195] (Item 18) 18. The light emitting device according to any one of items 1 to 17, wherein the surface of the first electrode has a concave shape in which the central portion is more concave toward the main surface than other portions.

[0196] (Item 19) 19. The light emitting device according to any one of items 1 to 18, wherein the groove is recessed from the surface of the side wall in a direction parallel to the main surface.

[0197] (Item 20) 20. A display device comprising: a light-emitting device according to any one of items 1 to 19; and a control circuit connected to the light-emitting device.

[0198] (Item 21) an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; 20. A photoelectric conversion device, wherein the display unit displays an image captured by the imaging element, and the photoelectric conversion device comprises the light-emitting device according to any one of items 1 to 19.

[0199] (Item 22) A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device. 20. An electronic device, wherein the display unit comprises the light-emitting device according to any one of items 1 to 19.

[0200] (Item 23) A lighting device having a light source and at least one of a light diffusion unit and an optical film, 20. An illumination device, wherein the light source comprises the light emitting device according to any one of items 1 to 19.

[0201] (Item 24) A moving body having a body and a lighting fixture provided on the body, 20. A moving body, wherein the lighting fixture comprises the light emitting device according to any one of items 1 to 19.

[0202] (Item 25) A method for manufacturing a light emitting device including a plurality of light emitting elements arranged on a main surface of a substrate, the method comprising: forming an insulating layer having a recess on the main surface; embedding a first electrode in the recess; forming a groove in a sidewall of the recess; forming an organic layer including a light-emitting layer and an organic functional layer disposed between the light-emitting layer and the first electrode so as to cover the insulating layer and the first electrode; forming a second electrode to cover the organic layer; the groove is disposed in a portion of the sidewall farther from the main surface than the surface of the first electrode; a portion of the insulating layer that is farther from the main surface than the surface of the first electrode in orthogonal projection onto the main surface does not overlap the first electrode;

[0203] (Item 26) the step of forming the insulating layer includes the steps of forming a first insulating layer, forming a second insulating layer so as to cover the first insulating layer, and forming a third insulating layer so as to cover the second insulating layer; 26. The manufacturing method of item 25, wherein the second insulating layer comprises a material different from the first insulating layer and the third insulating layer.

[0204] (Item 27) Item 27. The manufacturing method according to item 26, wherein the step of forming the groove includes a step of selectively etching the second insulating layer relative to the first insulating layer and the third insulating layer.

[0205] (Item 28) the step of forming the groove includes a step of chemical etching using CF4 gas, Item 28. The manufacturing method according to item 26 or 27, wherein the second insulating layer has a higher etching rate than the first insulating layer and the third insulating layer in chemical etching using CF4 gas.

[0206] (Item 29) The step of embedding the first electrode includes: forming a conductive material on the insulating layer; planarizing the surface of the conductive material; selectively etching the conductive material relative to the insulating layer; 29. The method for producing a cellulose ester resin according to any one of items 25 to 28, comprising:

[0207] (Item 30) 30. The manufacturing method according to item 29, wherein the groove is formed during or after the step of selectively etching the conductive material.

[0208] (Item 31) 30. The manufacturing method according to any one of items 25 to 29, wherein the step of forming the groove is carried out before the step of embedding the first electrode.

[0209] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0210] 100: light emitting device, 110: insulating layer, 120, 140: electrodes, 125: surface, 130: organic layer, 131: organic functional layer, 132: light emitting layer, 150: groove, 160: recess, 161: side wall, 200: substrate, 210: light emitting element, 220: main surface

Claims

1. A light emitting device comprising a plurality of light emitting elements arranged on a main surface of a substrate, Each of the plurality of light-emitting elements a first electrode disposed in a recess provided in an insulating layer disposed on the main surface; an organic layer disposed so as to cover the insulating layer and the first electrode, the organic layer including a light-emitting layer and an organic functional layer disposed between the light-emitting layer and the first electrode; a second electrode disposed so as to cover the organic layer; a groove is provided in a portion of a sidewall of the recess that is farther from the main surface than the surface of the first electrode; a portion of the insulating layer that is farther from the main surface than the surface of the first electrode does not overlap with the first electrode when orthogonally projected onto the main surface;

2. The light-emitting device according to claim 1 , wherein the groove is arranged so as to surround the first electrode in an orthogonal projection onto the main surface.

3. The light-emitting device according to claim 1, characterized in that the organic functional layer includes a portion cut at the groove, or the film thickness of the portion covering the groove is thinner than the film thickness before and after the portion covering the groove.

4. the insulating layer includes a first insulating layer, a second insulating layer disposed between the first insulating layer and the main surface, and a third insulating layer disposed between the second insulating layer and the main surface; 2. The light-emitting device according to claim 1, wherein the groove is formed by the second insulating layer being recessed in the sidewall in a direction parallel to the main surface relative to the first insulating layer and the third insulating layer.

5. The light emitting device according to claim 4 , wherein the second insulating layer includes a material different from the first insulating layer and the third insulating layer.

6. The second insulating layer is made of CF ４ 5. The light emitting device according to claim 4, wherein the insulating layer contains a material having a higher etching rate in chemical etching using a gas than the first insulating layer and the third insulating layer.

7. The light-emitting device described in claim 4, characterized in that the length in the normal direction of the main surface between the surface of the first electrode and the second insulating layer is greater than the length in the normal direction of the portion of the organic functional layer that contacts the first electrode.

8. 5. The light-emitting device according to claim 4, wherein the length of the first insulating layer in the normal direction to the main surface is greater than the length of the portion of the organic functional layer in contact with the first electrode in the normal direction.

9. 5. The light-emitting device according to claim 4, wherein the length of the second insulating layer in the normal direction to the main surface is greater than the length of the portion of the organic functional layer in contact with the first electrode in the normal direction.

10. The light-emitting device according to claim 4, characterized in that the length by which the first insulating layer protrudes from the second insulating layer on the side wall is greater than the length in the normal direction of the main surface of the portion of the organic functional layer that contacts the first electrode.

11. The light-emitting device according to claim 1 , wherein the organic functional layer includes at least one of a hole injection layer and a hole transport layer.

12. The light-emitting device described in claim 1, characterized in that the length in the normal direction of the main surface between the surface of the first electrode and the part of the side wall farthest from the main surface is smaller than the length in the normal direction of the part of the organic layer excluding the organic functional layer that is arranged on the first electrode.

13. 2. The light emitting device according to claim 1, wherein the portion of the sidewall excluding the groove has an inclination of 50 degrees or more with respect to a direction parallel to the main surface.

14. 2. The light-emitting device according to claim 1, wherein the first electrode includes a first conductive layer, a second conductive layer disposed between the first conductive layer and the main surface, and a third conductive layer disposed between the second conductive layer and the main surface.

15. the plurality of light-emitting elements include a first light-emitting element and a second light-emitting element, The light-emitting device described in claim 14, characterized in that the length in the normal direction of the main surface of the first conductive layer arranged in the first light-emitting element and the length in the normal direction of the first conductive layer arranged in the second light-emitting element are different from each other.

16. the first electrode further includes a fourth insulating layer disposed between the first conductive layer and the second conductive layer; 15. The light emitting device according to claim 14, wherein the first conductive layer and the second conductive layer are electrically connected by a conductor disposed in a through hole provided in the fourth insulating layer.

17. the plurality of light-emitting elements include a third light-emitting element and a fourth light-emitting element, The light-emitting device described in claim 16, characterized in that the length in the normal direction of the main surface of the fourth insulating layer arranged in the third light-emitting element and the length in the normal direction of the fourth insulating layer arranged in the fourth light-emitting element are different from each other.

18. 2. The light emitting device according to claim 1, wherein the surface of the first electrode has a central portion that is recessed more toward the main surface than other portions.

19. The light emitting device according to claim 1 , wherein the groove is recessed from the surface of the side wall in a direction parallel to the main surface.

20. 20. A display device comprising: a light-emitting device according to claim 1; and a control circuit connected to the light-emitting device.

21. an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image; 20. A photoelectric conversion device, wherein the display section displays an image captured by the imaging element, and the photoelectric conversion device comprises the light-emitting device according to claim 1.

22. A display unit is provided in the housing, and a communication unit is provided in the housing and communicates with an external device.

20. An electronic device, wherein the display unit comprises the light-emitting device according to claim 1.

23. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 20. An illumination device, characterized in that the light source comprises a light emitting device according to any one of claims 1 to 19.

24. A moving body having a body and a lighting fixture provided on the body, 20. A moving body, wherein the lighting fixture comprises the light emitting device according to claim 1.

25. A method for manufacturing a light emitting device including a plurality of light emitting elements arranged on a main surface of a substrate, the method comprising: forming an insulating layer having a recess on the main surface; embedding a first electrode in the recess; forming a groove in a sidewall of the recess; forming an organic layer including a light-emitting layer and an organic functional layer disposed between the light-emitting layer and the first electrode so as to cover the insulating layer and the first electrode; forming a second electrode to cover the organic layer; the groove is disposed in a portion of the sidewall farther from the main surface than a surface of the first electrode; a portion of the insulating layer that is farther from the main surface than the surface of the first electrode in orthogonal projection onto the main surface does not overlap the first electrode;

26. the step of forming the insulating layer includes a step of forming a first insulating layer, a step of forming a second insulating layer so as to cover the first insulating layer, and a step of forming a third insulating layer so as to cover the second insulating layer; 26. The method of claim 25, wherein the second insulating layer comprises a different material than the first insulating layer and the third insulating layer.

27. 27. The method of claim 26, wherein forming the groove comprises selectively etching the second insulating layer relative to the first insulating layer and the third insulating layer.

28. The step of forming the grooves is ４ This includes a chemical etching process using gases. The second insulating layer is made of CF ４ 28. The manufacturing method according to claim 26, wherein the etching rate of the insulating layer is higher than that of the first insulating layer and the third insulating layer in chemical etching using a gas.

29. The step of embedding the first electrode includes: forming a conductive material on the insulating layer; planarizing the surface of the conductive material; selectively etching the conductive material relative to the insulating layer; 26. The method of claim 25, comprising:

30. 30. The method of claim 29, wherein the grooves are formed during or after the step of selectively etching the conductive material.

31. 26. The manufacturing method according to claim 25, wherein the step of forming the groove is performed before the step of embedding the first electrode.

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