Semiconductor element

Abstract

To provide a semiconductor element having a stable electric characteristic, whose reliability can be improved.SOLUTION: A semiconductor element includes a main transistor, a peripheral circuit element connected to one end of the main transistor, and a Zener diode connected between the other end of the main transistor and the peripheral circuit element. The main transistor includes a main channel layer, a barrier layer on the main channel layer that contains a material with an energy band gap different from that of the main channel layer, a main gate electrode on the barrier layer, a gate semiconductor layer disposed between the barrier layer and the main gate electrode, and a main source electrode and a main drain electrode disposed on each side surface of the main gate electrode and connected to the main channel layer. The peripheral circuit element includes a sub-channel layer connected to the main drain electrode and including a drift region containing two-dimensional electron gas, and a sensing electrode disposed on the sub-channel layer. The Zener diode is connected between the sensing electrode and the main source electrode.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having stable electrical characteristics and improved reliability. [Background technology]

[0002] 2. Description of the Related Art Power semiconductor elements are becoming increasingly important in a variety of fields, including transportation such as electric vehicles, railways, and electric trams, renewable energy systems such as solar power generation and wind power generation, and mobile devices. Power semiconductor devices are semiconductor devices used to handle high voltages and high currents, and perform functions such as power conversion and control in large power systems and high-power electronic devices.

[0003] Power semiconductor devices have the capability and durability to handle high power, can handle large amounts of current, and can withstand high voltages. For example, power semiconductor devices process voltages of several hundred to several thousand volts and currents of several tens to several thousand amperes. Power semiconductor devices minimize power losses and improve the efficiency of electrical energy. Furthermore, power semiconductor elements operate stably even in high-temperature environments. Such power semiconductor elements are classified according to the material, and include, for example, SiC power semiconductor elements and GaN power semiconductor elements.

[0004] By using SiC or GaN instead of conventional silicon wafers to manufacture power semiconductor devices, it is possible to compensate for the disadvantage of silicon, which has unstable properties at high temperatures. SiC power semiconductor elements are resistant to high temperatures, have low power loss, and are suitable for electric vehicles, renewable energy systems, and other applications. GaN power semiconductor elements are expensive, but are efficient in terms of speed and are suitable for fast charging of mobile devices. Therefore, there is a need to improve the stability of electrical characteristics and reliability of power semiconductor elements. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made in view of the above-mentioned problems with conventional semiconductor elements, and an object of the present invention is to provide a semiconductor element that has stable electrical characteristics and can improve reliability. [Means for solving the problem]

[0006] In order to achieve the above object, a semiconductor device according to the present invention includes a main transistor, a peripheral circuit element electrically connected to one end of the main transistor, and a Zener diode electrically connected between the other end of the main transistor and the peripheral circuit element, wherein the main transistor includes a main channel layer, a barrier layer on the main channel layer including a material having a different energy bandgap from that of the main channel layer, a main gate electrode on the barrier layer, a gate semiconductor layer disposed between the barrier layer and the main gate electrode, and a main source electrode and a main drain electrode disposed on each side of the main gate electrode and electrically connected to the main channel layer, and the peripheral circuit element includes a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas, and a sensing electrode disposed on the sub-channel layer, and the Zener diode is electrically connected between the sensing electrode and the main source electrode.

[0007] a gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the gate electrode; and a main source electrode and a main drain electrode disposed on each side of the gate electrode and electrically connected to the main channel layer; a sub-channel layer electrically connected to the main drain electrode and including a drift region having two-dimensional electron gas; a sub-drain electrode electrically connected to one side of the sub-channel layer and extending from one end of the main drain electrode; and a sensing electrode electrically connected to the other side of the sub-channel layer;

[0008] a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sub-drain electrode electrically connected to the sub-channel layer and extending from one end of the main drain electrode; a sensing electrode electrically connected to the sub-channel layer; and a sub-gate electrode disposed on the sub-channel layer and disposed between the sub-drain electrode and the sensing electrode; and the Zener diode electrically connected between the sensing electrode and the main source electrode. [Effects of the Invention]

[0009] The semiconductor device according to the present invention includes semiconductor layers having different electric polarization characteristics, and a semiconductor layer having a relatively large polarizability induces two-dimensional electron gas in another semiconductor layer heterojunctioned therewith. Such two-dimensional electron gas can be used as a channel between a main source electrode and a main drain electrode. The continuation or interruption of the flow of such two-dimensional electron gas can be controlled by a bias voltage applied to the main gate electrode, thereby improving the electrical characteristics and reliability of the semiconductor device. [Brief explanation of the drawings]

[0010] [Figure 1]1 is a block diagram showing a schematic configuration of a semiconductor device according to an embodiment of the present invention; [Figure 2] 1 is a circuit diagram illustrating a semiconductor device according to an embodiment of the present invention. [Figure 3] 3 is a timing diagram illustrating a gate voltage, a first power supply voltage, and a sense voltage of the semiconductor device according to the embodiment of FIG. 2. [Figure 4] 1 is a diagram showing a schematic configuration of a semiconductor device according to an embodiment of the present invention; [Figure 5] FIG. 5 is a cross-sectional view taken along line AA' in FIG. [Figure 6] FIG. 5 is a cross-sectional view taken along line AA' in FIG. [Figure 7] 5 is a cross-sectional view taken along the line BB' and the line CC' in FIG. 4. [Figure 8] 5A and 5B are cross-sectional views corresponding to lines BB' and CC' of FIG. 4, showing a semiconductor device according to an embodiment of the present invention. [Figure 9] 1 is a circuit diagram illustrating a resistor unit of a semiconductor device according to an embodiment of the present invention; [Figure 10] 10 is a plan view showing the semiconductor device according to the embodiment of FIG. 9. FIG. [Figure 11] FIG. 11 is a cross-sectional view taken along the line DD' in FIG. [Figure 12] 11 is a cross-sectional view corresponding to line DD' of FIG. 10, showing peripheral circuit elements of a semiconductor device according to an embodiment of the present invention. [Figure 13] 1 is a circuit diagram illustrating a semiconductor device according to an embodiment of the present invention. [Figure 14] 14 is a timing diagram illustrating a gate voltage, a first power supply voltage, and a sense voltage of the semiconductor device according to the embodiment of FIG. 13. [Figure 15] 14 is a plan view showing the semiconductor device according to the embodiment of FIG. 13. FIG. [Figure 16] FIG. 16 is a cross-sectional view taken along the line EE' in FIG. [Figure 17] 16 is a cross-sectional view corresponding to line EE' in FIG. 15, showing peripheral circuit elements of a semiconductor device according to an embodiment of the present invention. [Figure 18] 16 is a cross-sectional view corresponding to line EE' in FIG. 15, showing peripheral circuit elements of a semiconductor device according to an embodiment of the present invention. [Figure 19] 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to an embodiment of the present invention; [Figure 20] 1 is a plan view illustrating a semiconductor device according to an embodiment of the present invention; [Figure 21] FIG. 21 is a cross-sectional view taken along line FF' in FIG. 20. [Figure 22] 1 is a circuit diagram illustrating a semiconductor device according to an embodiment of the present invention. [Figure 23] 23 is a timing diagram illustrating a gate voltage, a first power supply voltage, and a sense voltage of the semiconductor device according to the embodiment of FIG. 22. [Figure 24] 23 is a plan view showing the semiconductor device according to the embodiment of FIG. 22. FIG. [Figure 25] FIG. 25 is a cross-sectional view taken along line GG' in FIG. 24. DETAILED DESCRIPTION OF THE INVENTION

[0011] Next, specific examples of embodiments for carrying out the semiconductor device according to the present invention will be described with reference to the drawings.

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In order to clearly describe the present invention, parts that are not relevant to the description will be omitted and the same reference numerals will be used throughout the specification to refer to the same or similar components. Furthermore, the size and thickness of each component shown in the drawings are shown arbitrarily for the convenience of explanation, and the present invention is not necessarily limited to those shown in the drawings. In the drawings, the thickness of layers and regions is exaggerated to clearly show them. In the drawings, the thicknesses of some layers and regions are exaggerated for ease of explanation. Furthermore, when a layer, film, region, plate, or other part is "on" or "above" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part in between. Conversely, when we say that one part is "directly above" another, we mean that there is no other part in the middle. Furthermore, being "above" or "on" a reference part means being located above or below the reference part, and does not necessarily mean being located "above" or "on" in the direction opposite to gravity. Furthermore, throughout the specification, when a part "comprises" a certain element, it does not mean that it excludes other elements, but that it may further include other elements, unless otherwise specified. Furthermore, throughout this specification, "on a plane" means when the target part is viewed from above, and "on a cross section" means when the target part is cut vertically and viewed from the side.

[0013] As shown in FIG. 1, a semiconductor device according to an embodiment of the present invention includes a main device region (MA) including a main transistor 100, a peripheral circuit region (PA) including peripheral circuit elements 300, a Zener unit 400, and a sensing part 500. In the main element region (MA), a main transistor 100 is arranged. For example, the main transistor 100 of the semiconductor device according to an embodiment may be a normally-off high electron mobility transistor (HEMT). However, without being limited thereto, the main transistor 100 of the semiconductor device according to an embodiment may be a normally-on high electron mobility transistor or another type of transistor. That is, in one embodiment, the main device region (MA) refers to a region where the main transistor 100 is disposed.

[0014] The peripheral circuit area (PA) includes elements electrically connected to the main transistor 100. For example, a peripheral circuit element 300 electrically connected to the main transistor 100 is disposed in a peripheral circuit region (PA) of a semiconductor device according to an embodiment. In one embodiment, one end of the peripheral circuit element 300 is electrically connected to the main transistor 100 , and the other end of the peripheral circuit element 300 is connected to the Zener unit 400 and the sensing unit 500 . As an example, the peripheral circuit element 300 arranged in the peripheral circuit area (PA) includes a resistor element (310 in FIG. 2), a diode element (320 in FIG. 13), or a sub-transistor element (330 in FIG. 22). However, as another example, and not limited thereto, the peripheral circuit element 300 may include a passive element such as a capacitor or an inductor, or an active element such as an integrated circuit (IC) chip. As another example, the peripheral circuit elements 300 may include a current divider, a voltage divider, a voltage clipper, a protection element for the main transistor 100, and the like. In one embodiment, the peripheral circuit area (PA) refers to an area where peripheral circuit elements 300 are arranged.

[0015] The Zener unit 400 is electrically connected between the peripheral circuit element 300 and the main transistor 100 . One end of the Zener unit 400 is electrically connected to the peripheral circuit element 300 , and the other end of the Zener unit 400 is electrically connected to the main transistor 100 . For example, the Zener unit 400 is electrically connected between the peripheral circuit element 300 and the other end of the main transistor 100 (for example, the second electrode (D in FIG. 2) of the main transistor 100). The Zener unit 400 is configured together with the peripheral circuit element 300 and serves to clip the voltage at one end of the Zener unit 400 . The Zener unit 400 prevents the voltage at one end of the Zener unit 400 from increasing suddenly. As an example, the Zener unit 400 includes, but is not limited to, a Zener diode (410 in FIG. 2). Here, a Zener diode refers to an element that has the same characteristics as a general diode element and allows current to flow when a forward voltage is applied, but is designed to allow reverse current to flow at a lower voltage (breakdown voltage) than a general diode element when a reverse voltage is applied. This is further explained below with reference to FIG.

[0016] The sensing part 500 is electrically connected to the peripheral circuit element 300 and the Zener unit 400 . For example, the sensing unit 500 is electrically connected to the other end of the peripheral circuit element 300 and one end of the Zener unit 400 . The sensing unit 500 senses the voltage at the other end of the peripheral circuit element 300 and / or the voltage at one end of the Zener unit 400 . The sensing unit 500 may detect a change in voltage at one end of the main transistor 100 or calculate a period in which the main transistor 100 is turned on based on the sensed voltage. In an exemplary embodiment, the sensing unit 500 further includes an element that performs an additional operation based on the calculated change in voltage at one end of the main transistor 100 or the turn-on period.

[0017] For example, the sensing unit 500 may further include a circuit for compensating and protecting the main transistor 100 and / or the semiconductor device including the main transistor 100. That is, the sensing unit 500 detects a change in voltage at one end of the main transistor 100 or calculates the period in which the main transistor 100 turns on, and compensates and protects the main transistor 100 so that it operates within a preset range. Here, the compensation circuit refers to a circuit that compensates for the operating loss of the main transistor 100 so that the main transistor 100 operates within a preset range. The protection element may be a circuit that prevents a semiconductor element including the main transistor 100 from being damaged, such as an overcurrent protection element, an overvoltage protection element, an overtemperature protection element, an open circuit protection element, an electrostatic discharge protection element, or an LDO (Low Drop-output) regulator. However, the sensing unit 500 is not limited thereto, and may further include a predetermined circuit for controlling the operation of the main transistor 100 .

[0018] Hereinafter, a circuit structure of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 2 is a circuit diagram illustrating a semiconductor device according to an embodiment of the present invention, and FIG. 3 is a timing diagram illustrating a gate voltage, a first power supply voltage, and a sense voltage of the semiconductor device according to the embodiment of FIG. For convenience of explanation, the following description will be given assuming that the second power supply voltage (VS) is the ground voltage.

[0019] Referring to FIG. 2, the semiconductor device according to the embodiment of the present invention includes a main transistor 100, a resistive element 310, a Zener diode 410, and a sensing unit 500. In one embodiment, the resistive element 310 corresponds to the peripheral circuit element 300 in FIG. 1, and the Zener diode 410 corresponds to the Zener unit 400 in FIG. The main transistor 100 includes a main gate electrode (G), a first electrode (D), and a second electrode (S). The main transistor 100 controls the drain-source current between the first electrode (D) and the second electrode (S) in response to a gate signal applied to the main gate electrode (G).

[0020] For example, when a turn-on signal is applied to the main gate electrode (G) of the main transistor 100, a current flows along the first path (C1). Here, the first path (C1) refers to a path through which a current flows from the first electrode (D) to the second electrode (S) of the main transistor 100. As a result, a current flows from the first node (N1) through the main transistor 100 to the second node (N2). The first electrode (D) is connected to the first power supply voltage (V D ) is supplied to the second electrode (S), and a second power supply voltage (V S ) is supplied. The magnitude of the second power supply voltage (VS) is D ) is smaller than the size of

[0021] For example, the second power supply voltage (V S ) is the ground voltage. Here, the first electrode (D) refers to the main drain electrode (175m in FIG. 4) of the main transistor 100 according to one embodiment, and the second electrode (S) refers to the main source electrode (173m in FIG. 4) of the main transistor 100 according to one embodiment. In addition, the first power supply voltage (V D ) means the voltage applied to the main drain electrode (175m in FIG. 4) of the main transistor 100. Second power supply voltage (V S ) means the voltage applied to the main source electrode (173m in FIG. 4) of the main transistor 100.

[0022] The resistive element 310 is electrically connected to the first electrode (D) of the main transistor 100. In addition, the resistive element 310 is electrically connected to the Zener diode 410 and the sensing unit 500 . For example, one end of the resistance element 310 is connected to one end of the main transistor 100 via a first node (N1). For example, one end of the resistance element 310 is electrically connected to the first electrode (D) of the main transistor 100 via a first node (N1). That is, in one embodiment, one end of the resistor element 310 is electrically connected to the main drain electrode (175m in FIG. 4) of the main transistor 100 through a first node (N1). One end of the resistor element 310 is connected to a first power supply voltage (V D ) is connected to a first power supply having a As a result, the first power supply voltage (V D ) is supplied.

[0023] The other end of the resistive element 310 is electrically connected to the Zener diode 410 and the sensing unit 500 through a third node N3. In one embodiment, the resistive element 310 corresponds to the resistance of the sub-drift regions (DTRs in FIG. 4) between the sub-drain electrodes (175 in FIG. 4) and the sense electrodes (SE in FIG. 4). Also, the third node (N3) may be a point corresponding to the sensing electrode (SE in FIG. 4). This will be described later with reference to FIGS.

[0024] The Zener diode 410 is electrically connected between the resistive element 310 and the main transistor 100 . The Zener diode 410 includes an anode 412 and a cathode 411 . The cathode 411 of the Zener diode 410 is electrically connected to the resistance element 310 via a third node (N3), and the anode 412 of the Zener diode 410 is electrically connected to the second electrode (S) of the main transistor 100 via a second node (N2). Furthermore, the anode 412 of the Zener diode 410 is electrically connected to a second power supply that supplies a second power supply voltage (VS) via a second node (N2).

[0025] In one embodiment, the Zener diode 410 has the same characteristics as a general diode element in the forward voltage direction, and current flows, but in the reverse voltage direction, the breakdown voltage (V Zth ) or more, reverse current flows. At this time, the voltage applied to both ends of the Zener diode 410 is the breakdown voltage (V Zth ) and is constant. That is, the Zener diode 410 has a breakdown voltage (V Zth ) or less, no current flows, but the breakdown voltage (V Zth ) or more, current flows. Breakdown voltage (V Zth ) is defined as the minimum voltage at which a current flows through the Zener diode 410 when a reverse voltage is applied to the Zener diode 410. Here, the forward direction means the direction from the anode 412 to the cathode 411 of the Zener diode 410 , and the reverse direction means the direction from the cathode 411 to the anode 412 of the Zener diode 410 . Due to this characteristic, the Zener diode 410 plays a role in clipping the sense voltage (Va) of the third node (N3).

[0026] Further referring to FIG. 3, for example, the first power supply voltage (V D ) is the breakdown voltage (V Zth ) (for example, the third section (T3) of FIG. 3), this causes the Zener diode 410 to have a breakdown voltage (V Zth ) is applied, and no current flows through the Zener diode 410. Therefore, current may not flow along the second path (C2), and the magnitude of the sensed voltage (Va) at the third node (N3) may be less than the first power supply voltage (V D ) may be substantially the same size. In addition, the first power supply voltage (V D ) is the breakdown voltage (V Zth ) (for example, the first section (T1), the second section (T2) in FIG. 3, etc.), this causes the Zener diode 410 to have a breakdown voltage (V Zth ) is applied, and current flows from the cathode 411 to the anode 412 of the Zener diode 410. That is, the current flows along the second path (C2). That is, the current flows from the first node (N1) through the resistive element 310 to the third node (N3), passes through the Zener diode 410 and flows to the second node (N2). At this time, the sense voltage (V a ) of the third node (N3) is equal to the breakdown voltage (V Zth ) has substantially the same magnitude as

[0027] Referring again to FIG. 2, the sensing unit 500 is connected to a third node (N3). The sensing unit 500 is electrically connected to one end of the peripheral circuit element 300 and the cathode 411 of the Zener unit 400 through a third node N3. The sensing unit 500 senses the sense voltage (Va) of the third node (N3). The sensing unit 500 detects a change in the voltage at one end of the main transistor 100 based on the sense voltage (Va). For example, the sensing unit 500 may determine the first power supply voltage (V D ) is the breakdown voltage (V Zth ) to find intervals smaller than the magnitude of Specifically, as shown in FIG. 3, the sense voltage (Va) has substantially the same magnitude as the breakdown voltage (VZth) in the first section (T1), the second section (T2), the fourth section (T4), and the fifth section (T5). This means that the current flows along the second path (C2).

[0028] That is, in the first section (T1), the second section (T2), the fourth section (T4), and the fifth section (T5), the first power supply voltage (V D ) is the breakdown voltage (V Zth ) is larger than the size of Meanwhile, the sense voltage (Va) reaches the breakdown voltage (V Zth ) has a smaller size. This means that no current flows along the second path (C2). That is, the first power supply voltage (V D ) may be smaller than the breakdown voltage (VZth). That is, the first power supply voltage (V D ) is the breakdown voltage (V Zth ), the magnitude of the sensed voltage (Va) decreases. Accordingly, the sensing unit 500 controls the first power supply voltage (V) applied to the first electrode (D) of the main transistor 100 based on the magnitude of the sensing voltage (V a ). D ) is the breakdown voltage (V Zth ) to find intervals smaller than the magnitude of

[0029] As another example, the sensing unit 500 may adjust the first power supply voltage (V D ) can be detected to calculate the period in which the main transistor 100 turns on. Specifically, the gate voltage (VG) is applied to the main gate electrode (G) of the main transistor 100. On-voltage (V on ) is applied, the main transistor 100 turns on. At this time, as the main transistor 100 is turned on, the first power supply voltage (V D ) decreases in magnitude. Therefore, as described above, the sensing unit 500 senses the section in which the sense voltage (V a ) decreases, and D ) decreases, and thus the period during which the main transistor 100 is turned on can be calculated.

[0030] Hereinafter, a main transistor of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 4 is a plan view showing a semiconductor device according to an embodiment of the present invention, and FIGS. 5 and 6 are cross-sectional views taken along line AA' of FIG. FIG. 5 illustrates a semiconductor device in an off state according to an embodiment, and FIG. 6 illustrates a semiconductor device in an on state according to an embodiment.

[0031] Referring to FIG. 4, a peripheral circuit region (PA) of a semiconductor device according to an embodiment of the present invention is disposed apart from a main device region (MA). For example, the peripheral circuit region (PA) is disposed apart from the main element region (MA) in the second direction (Y direction), but is not limited thereto. For example, the peripheral circuit region (PA) may be spaced apart from the main element region (MA) in the first direction (X direction) or may surround the side of the main element region (MA). Of course, many other modifications are possible. In one embodiment, but not limited to, an isolation structure 160 is disposed between the peripheral circuit area (PA) and the main device area (MA). In one embodiment, the peripheral circuit area (PA) may be disposed adjacent to the main device area (MA).

[0032] Referring further to FIG. 5, the main transistor 100 of the semiconductor device according to the embodiment of the present invention includes a main channel layer 132m, a barrier layer 136 disposed on the main channel layer 132m, a main gate electrode 155 disposed on the barrier layer 136, a gate semiconductor layer 152 disposed between the barrier layer 136 and the main gate electrode 155, a protective layer 140 disposed on the barrier layer 136, and a main source electrode 173m and a main drain electrode 175m disposed spaced apart from each other on the main channel layer 132m. The main channel layer 132m is a layer that forms a channel between the main source electrode 173m and the main drain electrode 175m, and a two-dimensional electron gas (2DEG) 134 is disposed inside the main channel layer 132m.

[0033] The two-dimensional electron gas 134 is a charge transport model used in solid state physics, which refers to a group of electrons that can move freely in two dimensions (e.g., the xy plane) but cannot move in the other dimension (e.g., the z direction) and are tightly confined within the two dimensions. That is, the two-dimensional electron gas 134 exists in a two-dimensional space in a form similar to that of a piece of paper. Such a two-dimensional electron gas 134 mainly appears in a semiconductor heterojunction structure, and in the semiconductor device according to an embodiment of the present invention, it is generated at the interface between the main channel layer 132m and the barrier layer 136. For example, a two-dimensional electron gas 134 is generated in a portion adjacent to the barrier layer 136 in the main channel layer 132m.

[0034] The main channel layer 132m may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The main channel layer 132m can be constructed as a single layer or multiple layers. The main channel layer (132m) is Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). For example, the main channel layer 132m may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The main channel layer 132m may be a layer doped with impurities or may be a layer that is not doped with impurities (undoped). The thickness of the main channel layer 132m may be about several hundred nanometers or less.

[0035] The main channel layer 132m is disposed on the substrate 110, and the seed layer 121 and the buffer layer 120 are disposed between the substrate 110 and the main channel layer 132m. The substrate 110, the seed layer 121, and the buffer layer 120 are layers necessary for forming the main channel layer 132m, and may be omitted in some cases. For example, when a substrate made of GaN is used as the main channel layer 132m, at least one of the substrate 110, the seed layer 121, and the buffer layer 120 may be omitted.

[0036] Considering that a substrate made of GaN is relatively expensive, the main channel layer 132m containing GaN is grown using a substrate 110 made of Si. At this time, it is not easy to grow the main channel layer 132m directly on the substrate 110 because the lattice structure of Si and the lattice structure of GaN are different. As a result, the seed layer 121 and the buffer layer 120 are first grown on the substrate 110, and then the main channel layer 132m is grown on the buffer layer 120. Additionally, at least one of the substrate 110, the seed layer 121, and the buffer layer 120 may be used in the manufacturing process and then removed in the final structure of the semiconductor device.

[0037] The substrate 110 comprises a semiconductor material. For example, the substrate 110 may include sapphire, Si, SiC, AlN, GaN, or a combination thereof. The substrate 110 may be a silicon on insulator (SOI) substrate. However, the material of the substrate 110 is not limited to this, and any commonly used substrate can be used. In some cases, the substrate 110 may also include an insulating material. For example, after a plurality of layers including the main channel layer 132m are formed on a semiconductor substrate, the semiconductor substrate can be removed and replaced with an insulating substrate.

[0038] A seed layer 121 is disposed directly above the substrate 110 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the substrate 110 and the seed layer 121 . The seed layer 121 is a layer that acts as a seed for growing the buffer layer 120 and is composed of a crystal lattice structure that serves as a seed for the buffer layer 120 . The buffer layer 120 is disposed directly above the seed layer 121 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the seed layer 121 and the buffer layer 120 . The seed layer 121 may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The seed layer 121 is Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). For example, the seed layer 121 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof.

[0039] The buffer layer 120 is disposed on the seed layer 121 . The buffer layer 120 is disposed between the seed layer 121 and the main channel layer 132m. The buffer layer 120 is a layer for reducing the difference in lattice constant and thermal expansion coefficient between the seed layer 121 and the main channel layer 132m, and for preventing leakage current from flowing through the main channel layer 132m. The buffer layer 120 may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The buffer layer 120 is Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). For example, the buffer layer 120 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof.

[0040] The buffer layer 120 of the semiconductor device according to the embodiment of the present invention includes a superlattice layer 124 disposed on the seed layer 121 and a high-resistivity layer 126 disposed on the superlattice layer 124 . A superlattice layer 124 and a high-resistivity layer 126 are sequentially disposed on the substrate 110 . The superlattice layer 124 is disposed on the seed layer 121 . The superlattice layer 124 is disposed directly above the seed layer 121 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the seed layer 121 and the superlattice layer 124 . The superlattice layer 124 is a layer for alleviating the difference in lattice constant and thermal expansion coefficient between the substrate 110 and the main channel layer 132m, thereby alleviating the tensile stress and compressive stress generated between the substrate 110 and the main channel layer 132m, and for alleviating the stress between all layers formed by growth in the final structure of the semiconductor device according to one embodiment.

[0041] The superlattice layer 124 may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The superlattice layer 124 is Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). For example, the superlattice layer 124 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. In one embodiment, the superlattice layer 124 is made up of multiple alternating layers of different materials. For example, the superlattice layer 124 has a structure in which layers made of AlGaN and layers made of AlN are repeatedly stacked. That is, AlGaN / AlN / AlGaN / AlN / AlGaN / AlN are sequentially stacked to form a superlattice layer. The number of AlGaN layers and GaN layers constituting the superlattice layer 124 can be varied in various ways, and the materials constituting the superlattice layer 124 can be varied in various ways.

[0042] As another example, the superlattice layer 124 may have a structure in which a layer made of AlGaN and a layer made of GaN are repeatedly stacked. That is, AlGaN / GaN / AlGaN / GaN / AlGaN / GaN are sequentially stacked to form a superlattice layer. In an exemplary embodiment, when the superlattice layer 124 includes GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof, the superlattice layer 124 has n-type semiconductor properties in which the concentration of electrons is greater than the concentration of holes, but is not limited to this.

[0043] A high resistance layer 126 is disposed on the superlattice layer 124 . A high resistance layer 126 is disposed directly above the superlattice layer 124 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the superlattice layer 124 and the high resistance layer 126 . The high resistance layer 126 is disposed between the superlattice layer 124 and the main channel layer 132m. The high resistance layer 126 is a layer for preventing a leakage current from flowing through the main channel layer 132m, thereby preventing deterioration of the semiconductor device according to an embodiment. The high resistance layer 126 is made of a material with low conductivity so as to electrically insulate the substrate 110 from the main channel layer 132m.

[0044] The high resistance layer may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The high resistance layer 126 is Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). For example, the high-resistivity layer 126 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The high resistance layer 126 can be composed of a single layer or multiple layers. In an exemplary embodiment, when the high resistance layer 126 comprises GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof, the high resistance layer 126 has n-type semiconductor properties in which the concentration of electrons is greater than the concentration of holes, but is not limited to this.

[0045] A barrier layer 136 is disposed on the main channel layer 132m. The barrier layer 136 is disposed directly above the main channel layer 132m. However, the present invention is not limited to this, and other predetermined layers may be further disposed between the main channel layer 132m and the barrier layer 136. The region of the main channel layer 132m that overlaps with the barrier layer 136 between the main source electrode 173m and the main drain electrode 175m becomes a main drift region (DTRm). The main drift region (DTRm) is located between the main source electrode 173m and the main drain electrode 175m. The main drift region (DTRm) refers to a region where carriers move when a potential difference occurs between the main source electrode 173m and the main drain electrode 175m. According to one embodiment, a semiconductor device is turned on / off depending on whether a voltage is applied to the main gate electrode 155 and / or the magnitude of the voltage applied to the main gate electrode 155, thereby enabling or blocking the movement of carriers in the main drift region (DTRm).

[0046] The barrier layer 136 may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The barrier layer 136 is Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). The barrier layer 136 may include GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof, or the like. The energy bandgap of the barrier layer 136 can be adjusted by the composition ratio of Al and / or In. The barrier layer 136 is doped with a predetermined impurity. At this time, the impurity doped into the barrier layer 136 may be a p-type dopant capable of providing holes. For example, the impurity doped into the barrier layer 136 may be magnesium (Mg). By increasing or decreasing the impurity doping concentration of the barrier layer 136, the threshold voltage, on-resistance, etc. of the semiconductor device according to an embodiment can be adjusted.

[0047] The barrier layer 136 includes a semiconductor material having different properties from the main channel layer 132m. The barrier layer 136 may differ from the main channel layer 132m in at least one of polarization characteristics, energy band gap, or lattice constant. For example, the barrier layer 136 includes a material having a different energy bandgap than the main channel layer 132m. At this time, the barrier layer 136 has a higher energy band gap than the main channel layer 132m and a higher electric susceptibility than the main channel layer 132m. The barrier layer 136 allows a two-dimensional electron gas 134 to be induced in the main channel layer 132m, which has a relatively low electrical polarization. In this respect, the barrier layer 136 is sometimes called a channel supply layer or a two-dimensional electron gas supply layer. A two-dimensional electron gas 134 may be formed in the portion of the main channel layer 132 m located below the interface between the main channel layer 132 m and the barrier layer 136 . The two-dimensional electron gas 134 has very high electron mobility.

[0048] The barrier layer 136 can be composed of a single layer or multiple layers. When the barrier layer 136 is made up of multiple layers, the materials of each layer that makes up the multiple layers may have different energy bandgaps. At this time, the layers constituting the barrier layer 136 are arranged so that the closer they are to the main channel layer 132m, the larger the energy band gap becomes.

[0049] The main gate electrode 155 is disposed on the barrier layer 136 . The main gate electrode 155 overlaps a portion of the barrier layer 136 in the vertical direction (for example, in the thickness direction of the main channel layer 132m). The main gate electrode 155 overlaps a part of the main drift region (DTRm) of the main channel layer 132m in the vertical direction (for example, in the thickness direction of the main channel layer 132m). The main gate electrode 155 is disposed between the main source electrode 173m and the main drain electrode 175m. The main gate electrode 155 is spaced apart from the main source electrode 173m and the main drain electrode 175m. For example, the main gate electrode 155 is positioned closer to the main source electrode 173m than to the main drain electrode 175m. That is, the distance between the main gate electrode 155 and the main source electrode 173m is smaller than the distance between the main gate electrode 155 and the main drain electrode 175m, but is not limited thereto.

[0050] The main gate electrode 155 includes a conductive material. For example, the main gate electrode 155 may include a metal, a metal alloy, a conductive metal nitrate, a metal suicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal oxynitride. For example, the main gate electrode 155 may be made of titanium nitrate (TiN), tantalum carbide (TaC), tantalum nitrate (TaN), titanium silicon nitrate (TiSiN), tantalum silicon nitrate (TaSiN), tantalum titanium nitrate (TaTiN), titanium aluminum nitrate (TiAlN), tantalum aluminum nitrate (TaAlN), tungsten nitrate (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride nitrate (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride nitrate (TaCN), titanium The metals may include, but are not limited to, tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitrate (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitrate (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or combinations thereof. The main gate electrode 155 may be composed of a single layer or multiple layers.

[0051] The gate semiconductor layer 152 is disposed between the barrier layer 136 and the main gate electrode 155 . That is, the gate semiconductor layer 152 is disposed on the barrier layer 136 , and the main gate electrode 155 is disposed on the gate semiconductor layer 152 . The main gate electrode 155 makes a Schottky contact or an ohmic contact with the gate semiconductor layer 152 . The gate semiconductor layer 152 overlaps the main gate electrode 155 in the vertical direction (for example, in the thickness direction of the main channel layer 132m). At this time, the gate semiconductor layer 152 completely overlaps the main gate electrode 155 in a vertical direction (for example, in the thickness direction of the main channel layer 132m), and the top surface of the gate semiconductor layer 152 is entirely covered by the main gate electrode 155. That is, the gate semiconductor layer 152 has substantially the same planar shape as the main gate electrode 155 . However, the present invention is not limited to this, and the main gate electrode 155 may be disposed so as to cover at least a portion of the gate semiconductor layer 152 .

[0052] The gate semiconductor layer 152 is disposed between a main source electrode 173m and a main drain electrode 175m. The gate semiconductor layer 152 is spaced apart from the main source electrode 173m and the main drain electrode 175m. The gate semiconductor layer 152 is disposed closer to the main source electrode 173m than to the main drain electrode 175m. That is, the distance between the gate semiconductor layer 152 and the main source electrode 173m is smaller than the distance between the gate semiconductor layer 152 and the main drain electrode 175m, but is not limited thereto. In one embodiment, the gate semiconductor layer 152 overlaps the main gate electrode 155 in a vertical direction (eg, in the thickness direction of the main channel layer 132m). For example, the gate semiconductor layer 152 completely overlaps the main gate electrode 155 in the vertical direction (for example, in the thickness direction of the main channel layer 132m). That is, the side surface of the gate semiconductor layer 152 is aligned with the side surface of the main gate electrode 155 . However, the present invention is not limited to this, and the gate semiconductor layer 152 may also partially overlap the main gate electrode 155 .

[0053] The gate semiconductor layer 152 may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The gate semiconductor layer 152 is Al x In y Ga1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). For example, the gate semiconductor layer 152 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The gate semiconductor layer 152 includes a material having a different energy bandgap than the barrier layer 136 . For example, the gate semiconductor layer 152 includes GaN and the barrier layer 136 includes AlGaN. The gate semiconductor layer 152 is doped with a predetermined impurity. At this time, the impurity doped into the gate semiconductor layer 152 is a p-type dopant that can provide holes. For example, the gate semiconductor layer 152 includes GaN doped with p-type impurities. That is, the gate semiconductor layer 152 is made of a p-GaN layer. However, the present invention is not limited to this, and the gate semiconductor layer 152 may be a p-AlGaN layer. The impurity doped into the gate semiconductor layer 152 may be magnesium (Mg). At this time, if the impurity (for example, magnesium) doped in the gate semiconductor layer 152 is combined with a certain adjacent element, the hole concentration in the gate semiconductor layer 152 decreases, which may deteriorate the characteristics of the semiconductor device. The gate semiconductor layer 152 may be composed of a single layer or multiple layers.

[0054] The gate semiconductor layer 152 forms a depletion region (DPR) in the main channel layer 132m. The depletion region (DPR) is located within the main drift region (DTRm) and has a width narrower than that of the main drift region (DTRm). By disposing the gate semiconductor layer 152 having an energy band gap different from that of the barrier layer 136 on the barrier layer 136, the energy band level of the portion of the barrier layer 136 overlapping with the gate semiconductor layer 152 can be raised. As a result, a depletion region (DPR) is formed in the region of the main channel layer 132m that overlaps with the gate semiconductor layer 152. The depletion region (DPR) is a region within the channel path of the main channel layer 132m where the two-dimensional electron gas 134 does not form or has a lower electron concentration than the rest of the region. That is, the depletion region (DPR) means a region in the main drift region (DTRm) where the flow of the two-dimensional electron gas 134 can be cut off. Due to the occurrence of the depletion region (DPR), no current flows between the main source electrode 173m and the main drain electrode 175m, and the channel path may be cut off. Therefore, the semiconductor device according to the embodiment has a normally off characteristic.

[0055] That is, the semiconductor device according to an embodiment of the present invention is a normally-off high electron mobility transistor (HEMT). As shown in FIG. 5, in a normal state where no voltage is applied to the main gate electrode 155, a depletion region (DPR) exists, and the semiconductor device according to an embodiment is in an off state. As shown in FIG. 6, when a voltage equal to or greater than the threshold voltage is applied to the main gate electrode 155, the depletion region (DPR) disappears, and the two-dimensional electron gas 134 in the main drift region (DTRm) is connected without being cut off. That is, the two-dimensional electron gas 134 is formed in the entire channel path between the main source electrode 173m and the main drain electrode 175m, and the semiconductor device according to the embodiment is turned on. In summary, a semiconductor device according to one embodiment of the present invention includes semiconductor layers with different electrical polarization characteristics, and a semiconductor layer with a relatively large polarizability induces two-dimensional electron gas 134 in another semiconductor layer heterojunction with it. Such two-dimensional electron gas 134 can be used as a channel between the main source electrode 173m and the main drain electrode 175m, and the continuation or interruption of the flow of such two-dimensional electron gas 134 can be controlled by the bias voltage applied to the main gate electrode 155. In the gate-off state, the flow of the two-dimensional electron gas 134 is blocked, and no current flows between the main source electrode 173m and the main drain electrode 175m. With the gate on, the two-dimensional electron gas 134 continues to flow, causing a current to flow between the main source electrode 173m and the main drain electrode 175m.

[0056] Although the semiconductor device according to an embodiment of the present invention is a normally-off high electron mobility transistor in the above description, the present invention is not limited thereto. For example, a semiconductor device according to an embodiment of the present invention may be a normally-on high electron mobility transistor. In the case of a normally-on high electron mobility transistor, the gate semiconductor layer 152 can be omitted, so that the main gate electrode 155 is located directly above the barrier layer 136 . That is, the main gate electrode 155 contacts the barrier layer 136 . In this structure, when no voltage is applied to the main gate electrode 155, the two-dimensional electron gas 134 can be used as a channel, and current can flow between the main source electrode 173m and the main drain electrode 175m. Furthermore, when a negative voltage is applied to the main gate electrode 155, a depletion region (DPR) may occur below the main gate electrode 155, where the flow of the two-dimensional electron gas 134 is cut off.

[0057] The seed layer 121, the superlattice layer 124, the high resistance layer 126, the main channel layer 132m, the barrier layer 136, and the gate semiconductor layer 152 described above are stacked on the substrate 110 in this order. In the semiconductor device according to an embodiment, at least one of the seed layer 121, the superlattice layer 124, the high resistance layer 126, the main channel layer 132m, the barrier layer 136, and the gate semiconductor layer 152 may be omitted. The seed layer 121, the superlattice layer 124, the high-resistance layer 126, the main channel layer 132m, the barrier layer 136, and the gate semiconductor layer 152 may be composed of the same semiconductor material, and the material composition ratio of each layer may differ depending on the role of each layer and the performance required for the semiconductor device.

[0058] A protective layer 140 is disposed over the barrier layer 136 and the main gate electrode 155 . The protective layer 140 covers the top and side surfaces of the main gate electrode 155 and the side surfaces of the gate semiconductor layer 152 . The bottom surface of the protective layer 140 contacts the barrier layer 136 and the main gate electrode 155 . As a result, the barrier layer 136 , the gate semiconductor layer 152 , and the main gate electrode 155 are protected by the protective layer 140 . However, the present invention is not limited thereto, and the main gate electrode 155 may penetrate the protective layer 140 to be connected to the gate semiconductor layer 152 , and the protective layer 140 may not cover the upper surface of the main gate electrode 155 . Alternatively, the bottom surface of the protective layer 140 may contact the gate semiconductor layer 152 . The protective layer 140 may include an insulating material. For example, the protective layer 140 may include an oxide such as SiO2 or Al2O3. As another example, the protective layer 140 can include a nitrate such as SiN or an acid nitrate such as SiON. Although the protective layer 140 is shown as being made up of a single layer in FIGS. 5 and 6, the protective layer 140 is not limited thereto, and may be made up of multiple layers containing different materials.

[0059] A main source electrode 173m and a main drain electrode 175m are disposed on the main channel layer 132m. The main source electrode 173m and the main drain electrode 175m are in direct contact with the main channel layer 132m and are electrically connected to the main channel layer 132m. The main source electrode 173m and the main drain electrode 175m are spaced apart from each other, and the main gate electrode 155 and the gate semiconductor layer 152 are disposed between the main source electrode 173m and the main drain electrode 175m. The main gate electrode 155 and the gate semiconductor layer 152 are spaced apart from the main source electrode 173m and the main drain electrode 175m. For example, the main source electrode 173m is electrically connected to the main channel layer 132m on one side of the main gate electrode 155, and the main drain electrode 175m is electrically connected to the main channel layer 132m on the other side of the main gate electrode 155. The main source electrode 173m and the main drain electrode 175m are disposed outside the main drift region (DTRm) of the main channel layer 132m. The interface between the main source electrode 173m and the main channel layer 132m is one end of the main drift region (DTRm). Similarly, the interface between the main drain electrode 175m and the main channel layer 132m is the other end of the main drift region (DTRm).

[0060] However, without being limited thereto, the main source electrode 173m and the main drain electrode 175m may not be disposed on the outer surface of the main drift region (DTRm) of the main channel layer 132m. That is, the main channel layer 132m may not be recessed, and the main source electrode 173m and the main drain electrode 175m may be disposed on the upper surface of the main channel layer 132m. In this case, the bottom surfaces of the main source electrode 173m and the main drain electrode 175m contact the top surface of the main channel layer 132m. The portions of the main channel layer 132m in contact with the main source electrode 173m and the main drain electrode 175m are heavily doped. At this time, carriers that have passed through the two-dimensional electron gas 134 pass through the heavily doped portion of the main channel layer 132m, i.e., the upper portion of the two-dimensional electron gas 134, and are transferred to the main source electrode 173m and the main drain electrode 175m. The main source electrode 173m and the main drain electrode 175m may not be in direct contact with the two-dimensional electron gas 134 in the horizontal direction. Here, the horizontal direction means a direction along the upper surface of the main channel layer 132m or the barrier layer 136.

[0061] Specifically, trenches that penetrate the protective layer 140 and the barrier layer 136 and recess the upper surface of the main channel layer 132m are disposed on both sides of the main gate electrode 155 so as to be spaced apart from each other. A main source electrode 173m and a main drain electrode 175m are disposed in the trenches located on both sides of the main gate electrode 155, respectively. The main source electrode 173m and the main drain electrode 175m are formed to fill the trenches. Within the trenches, a main source electrode 173m and a main drain electrode 175m contact the main channel layer 132m and the barrier layer 136. The main channel layer 132m forms the bottom and sidewalls of the trench, and the barrier layer 136 forms the sidewalls of the trench. Therefore, the main source electrode 173m and the main drain electrode 175m contact the top surface and side surface of the main channel layer 132m. Furthermore, the main source electrode 173 m and the main drain electrode 175 m contact the side surfaces of the barrier layer 136 . That is, the main source electrode 173m and the main drain electrode 175m cover the side surfaces of the main channel layer 132m and the barrier layer 136.

[0062] In one embodiment, the main source electrode 173 m and the main drain electrode 175 m cover at least a portion of the side surface of the protective layer 140 . For example, the main source electrode 173 m and the main drain electrode 175 m cover the side surfaces of the protective layer 140 . The top surfaces of the main source electrode 173 m and the main drain electrode 175 m protrude from the top surface of the passivation layer 140 . In addition, at least one of the main source electrode 173 m and the main drain electrode 175 m covers at least a portion of the upper surface of the passivation layer 140 . However, the present invention is not limited to this. The main source electrode 173m and the main drain electrode 175m may cover at least a part of the side surface of the protective layer 140, and may not cover the remaining part of the side surface of the protective layer 140. In this case, the remaining part of the protective layer 140 may be disposed on the upper surfaces of the main source electrode 173m and the main drain electrode 175m.

[0063] The main source electrode 173m and the main drain electrode 175m may include a conductive material. For example, the main source electrode 173m and the main drain electrode 175m may include a metal, a metal alloy, a conductive metal nitrate, a metal suicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal oxynitride. For example, the main source electrode 173m and the main drain electrode 175m may be made of titanium nitrate (TiN), tantalum carbide (TaC), tantalum nitrate (TaN), titanium silicon nitrate (TiSiN), tantalum silicon nitrate (TaSiN), tantalum titanium nitrate (TaTiN), titanium aluminum nitrate (TiAlN), tantalum aluminum nitrate (TaAlN), tungsten nitrate (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride nitrate (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride nitrate ( The metals may include, but are not limited to, titanium (Ti), tantalum (Ta), tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitrate (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitrate (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or combinations thereof.

[0064] The main source electrode 173m and the main drain electrode 175m may be configured as a single layer or multiple layers. The main source electrode 173m and the main drain electrode 175m are in ohmic contact with the main channel layer 132m. The regions of the main channel layer 132m that contact the main source electrode 173m and the main drain electrode 175m are doped at a higher concentration than the other regions.

[0065] Although FIGS. 5 and 6 show that the semiconductor device according to an embodiment of the present invention includes a pair of main source electrode 173m and main drain electrode 175m, the number of main source electrodes 173m and main drain electrodes 175m is not limited thereto. For example, the main source electrode 173m may include a plurality of source electrodes stacked in sequence on the main channel layer 132m in a vertical direction (e.g., in the thickness direction of the main channel layer 132m), and the main drain electrode 175m may include a plurality of drain electrodes stacked in sequence on the main channel layer 132m in a vertical direction (e.g., in the thickness direction of the main channel layer 132m). Alternatively, each of the main source electrode 173m and the main drain electrode 175m may include three or more layers.

[0066] Although not shown, a semiconductor device according to an embodiment of the present invention may further include a field dispersion layer covering at least a portion of the protective layer 140 . The field spreading layer is disposed between the main source electrode 173m and the main drain electrode 175m. The field distribution layer covers the main gate electrode 155 . The field diffusion layer overlaps the main gate electrode 155 in the vertical direction (for example, in the thickness direction of the main channel layer 132m). The field dispersion layer is electrically connected to the main source electrode 173m. For example, the field dispersion layer is connected to the main source electrode 173m. The field dispersion layer may contain the same material as the main source electrode 173m and is disposed in the same layer as the main source electrode 173m. The field dispersion layer can be formed simultaneously in the same process as the main source electrode 173m. That is, the boundary between the field dispersion layer and the main source electrode 173m is not clear, and the field dispersion layer can be integrated with the main source electrode 173m. However, the present invention is not limited to this, and the field dispersion layer may be a separate component separated from the main source electrode 173m. Also, the field dispersion layer may be disposed on a different layer from the main source electrode 173m, and may be formed in a different process.

[0067] The field diffusion layer serves to diffuse the electric field concentrated around the main gate electrode 155 . Specifically, in the gate-off state, the two-dimensional electron gas 134 is located with a very high concentration in the portion of the main channel layer 132m located between the main gate electrode 155 and the main source electrode 173m and in the portion of the main channel layer 132m located between the main gate electrode 155 and the main drain electrode 175m. In this case, an electric field is concentrated in the main gate electrode 155 or the gate semiconductor layer 152 . On the other hand, the main gate electrode 155 and the gate semiconductor layer 152 are vulnerable to an electric field, and if an electric field is concentrated, leakage current increases, and the breakdown voltage of the main transistor 100 may decrease. At this time, the field dispersion layer disperses the electric field concentrated around the main gate electrode 155 or the gate semiconductor layer 152, reducing the leakage current and the breakdown voltage (V Zth ) can be increased.

[0068] Hereinafter, peripheral circuit elements of a semiconductor device according to an embodiment of the present invention will be described with further reference to FIGS. 7 is a cross-sectional view taken along lines BB' and CC' in FIG. 4, and FIG. 8 is a cross-sectional view corresponding to lines BB' and CC' in FIG. 4 showing a semiconductor device according to an embodiment of the present invention. The peripheral circuit element 300 of the semiconductor device according to the embodiments of FIGS. 4, 7 and 8 corresponds to the resistive element 310 of the embodiment of FIG. 2. Also, the Zener unit 400 of the semiconductor device according to the embodiments of FIGS. 4, 7 and 8 corresponds to the Zener diode 410 of the embodiment of FIG. Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device according to the embodiment of the present invention is a resistor element 310 and the Zener unit 400 is a Zener diode 410 will be described.

[0069] 4 and 7, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention includes a sub-channel layer 132s connected to a main drain electrode 175m and including a drift region having two-dimensional electron gas, a barrier layer 136 disposed on the sub-channel layer 132s, a sub-drain electrode 175s and a sensing electrode (SE) disposed on the sub-channel layer 132s, and a sub-source electrode 173s spaced apart from the sub-channel layer 132s. The sub-channel layer 132 s is disposed on the substrate 110 . The sub-channel layer 132s is a layer that forms a channel between the sub-drain electrode 175s and the sensing electrode (SE), and a two-dimensional electron gas (2DEG) 134 is located inside the sub-channel layer 132s. In one embodiment of a semiconductor device, a two-dimensional electron gas 134 is generated at the interface between the sub-channel layer 132s and the barrier layer 136. For example, a two-dimensional electron gas 134 is generated in the sub-channel layer 132s in a portion adjacent to the barrier layer 136.

[0070] In one embodiment, the sub-channel layer 132s includes a plurality of portions extending in a first direction (X direction) and a plurality of portions extending in a second direction (Y direction). For example, as shown in FIG. 4, the sub-channel layer 132s has portions extending in a first direction (X direction) and portions extending in a second direction (Y direction) from one side of the sub-drain electrode 175s, which are alternately arranged. This may be a shape for ensuring the length of the sub-channel layer 132s per unit area. However, this is merely an example, and the extension direction of the sub-channel layer 132s is not limited to this. For example, the sub-channel layer 132s may extend in only one direction from one side of the main channel layer 132m or may include multiple bent portions. Alternatively, the sub-channel layer 132s may include a portion extending in a diagonal direction intersecting the first direction (X direction) and the second direction (Y direction).

[0071] In one embodiment, the sub-channel layer 132s is elongated to have a predetermined length. Here, the extension length of the sub-channel layer 132s means the total length of the extension of the sub-channel layer 132s. At this time, the width of the sub-channel layer 132s is smaller than the width of the main channel layer 132m. Here, the width of the sub-channel layer 132s means the width along the direction perpendicular to the extension direction of the sub-channel layer 132s. The width of the main channel layer 132m means the width of the main channel layer 132m along the second direction (Y direction). To this extent, the sub-channel layer 132s acts as a resistive element 310 according to one embodiment. In one embodiment, one end of the sub-channel layer 132s contacts the sub-drain electrode 175s. The sub-channel layer 132s is electrically connected to the main drain electrode 175m via a sub-drain electrode 175s.

[0072] In one embodiment, the sub-channel layer 132s is integrally formed with the main channel layer 132m of the main transistor 100 by the same process. The sub-channel layer 132s is disposed in the same layer as the main channel layer 132m. The lower surface of the sub-channel layer 132s is located at the same level as the lower surface of the main channel layer 132m, and the upper surface of the sub-channel layer 132s is located at the same level as the upper surface of the main channel layer 132m. That is, the lower surface of the sub-channel layer 132s is located at the same distance from the upper surface of the substrate 110 as the lower surface of the main channel layer 132m. In addition, the upper surface of the sub-channel layer 132s is located at substantially the same distance from the upper surface of the substrate 110 as the upper surface of the main channel layer 132m. The thickness of the sub-channel layer 132s in the third direction (Z direction) may be substantially the same as the thickness of the main channel layer 132m in the third direction (Z direction), but is not limited thereto. The sub-channel layer 132s refers to a portion of the main channel layer 132m located in the peripheral circuit area (PA).

[0073] In one embodiment, the sub-channel layer 132s may include the same material as the main channel layer 132m located in the main element region (MA). As an example, the sub-channel layer 132s may include one or more materials selected from III-V materials, such as nitrates containing Al, Ga, In, B, or combinations thereof. The sub-channel layer 132s is disposed on the substrate 110, and the seed layer 121 and the buffer layer 120 are disposed between the substrate 110 and the sub-channel layer 132s. The substrate 110, the seed layer 121, and the buffer layer 120 are layers necessary for forming the sub-channel layer 132s, but may be omitted in some cases. In one embodiment, the substrate 110, seed layer 121, and buffer layer 120 located in the peripheral circuit region (PA) may be integrally formed by the same process as the substrate 110, seed layer 121, and buffer layer 120 located in the main element region (MA), respectively.

[0074] A barrier layer 136 is disposed over the sub-channel layer 132s. A barrier layer 136 is disposed directly above the sub-channel layer 132s. However, the present invention is not limited to this, and other predetermined layers may be further disposed between the sub-channel layer 132s and the barrier layer 136. The region of the sub-channel layer 132s that overlaps with the barrier layer 136 is defined as a drift region. Specifically, the barrier layer 136 differs from the sub-channel layer 132s in at least one of polarization characteristics, energy band gap, or lattice constant, so that the barrier layer 136 induces a two-dimensional electron gas 134 in the sub-channel layer 132s, which has a relatively low electrical polarization.

[0075] In one embodiment, in the peripheral circuit area (PA), the sub-channel layer 132s includes sub-drift regions (DTRs) between the sense electrode (SE) and the sub-drain electrode 175s. That is, the sub-drift regions (DTRs) refer to the regions of the sub-channel layer 132s from one side of the sub-channel layer 132s in contact with the sub-drain electrode 175s to the sensing electrode (SE). The sub-drift regions (DTRs) refer to the regions of the sub-channel layer 132s that overlap the barrier layer 136 between the sense electrode (SE) and the sub-drain electrode 175s. For example, the boundary where the sub-drain electrode 175s and the sub-channel layer 132s meet may be one end of the sub-drift region (DTRs), and the boundary where the sensing electrode (SE) and the sub-channel layer 132s meet may be the other end of the sub-drift region (DTRs). That is, the sub-drift regions (DTRs) refer to regions where carriers move between one side of the sub-channel layer 132s in contact with the sub-drain electrode 175s and the sensing electrode (SE) in the peripheral circuit region (PA).

[0076] In one embodiment, the sub-drift regions (DTRs) include a plurality of portions extending in a first direction (X direction) and a plurality of portions extending in a second direction (Y direction). For example, like the sub-channel layer 132s shown in FIG. 4, the sub-drift regions (DTRs) are alternately arranged with portions extending in a first direction (X direction) and portions extending in a second direction (Y direction) from one side of the sub-drain electrode 175s. This shape is designed to ensure the length of the sub-drift regions (DTRs) per unit area. However, this is merely an example, and the extension direction of the sub-drift regions (DTRs) is not limited to this.

[0077] The sub-drift regions (DTRs) have a resistive component. That is, the sub-drift regions (DTRs) function as a resistive element (310 in FIG. 2) having a predetermined resistance value. That is, the region of the sub-channel layer 132s from the sub-drain electrode 175s to the sensing electrode (SE) has a predetermined resistance value. A protective layer 140 is disposed over the barrier layer 136 . The lower surface of the protective layer 140 contacts the barrier layer 136 . In one embodiment, the protective layer 140 may be formed integrally with the protective layer 140 of the main device region (MA) through the same process. That is, the protective layer 140 is disposed on the barrier layer 136 in the main element region (MA) and the barrier layer 136 in the peripheral circuit region (PA).

[0078] A sub-drain electrode 175s and a sensing electrode (SE) are disposed on one side and the other side of the sub-channel layer 132s. The sub-drain electrode 175s and the sensing electrode (SE) contact the sub-channel layer 132s and are electrically connected to the sub-channel layer 132s. The sub-drain electrodes 175s and the sense electrodes (SE) are disposed outside the sub-drift regions (DTRs). The interface between the sub-drain electrode 175s and the sub-channel layer 132s is one edge of the sub-drift regions (DTRs). Similarly, the interface between the sense electrode (SE) and the sub-channel layer 132s is the other end of the sub-drift regions (DTRs). The sub-drain electrode 175s extends in the second direction (Y direction) from one end of the main drain electrode 175m. The sub-drain electrode 175s refers to a portion of the drain electrode 175 located in the peripheral circuit area (PA). The sensing electrode (SE) is an electrode corresponding to the third node (N3 in FIG. 2) to which the Zener unit 400 and the sensing part 500 are connected. As a result, the sensing voltage (Va) is transmitted to the Zener unit 400 and the sensing part 500 via the sensing electrode (SE).

[0079] In one embodiment, the sub-drain electrode 175s and the sensing electrode (SE) are disposed in a space recessed by at least a portion of the sub-channel layer 132s. The sub-drain electrode 175s and the sensing electrode (SE) penetrate the barrier layer 136 and contact the side surface of the sub-channel layer 132s. The sub-drain electrodes 175s and the sense electrodes (SE) are electrically connected to the sub-drift regions (DTRs). However, the present invention is not limited thereto, and the sub-channel layer 132s may not be recessed, and the sub-drain electrode 175s and the sensing electrode (SE) may be disposed on the upper surface of the sub-channel layer 132s. The sub-drain electrode 175s and the sensing electrode (SE) cover at least a portion of the top surface of the protective layer 140, but are not limited to this. In addition, the sub-drain electrode 175s and the sensing electrode (SE) cover at least a part of the side surface of the protective layer 140. For example, the sub-drain electrode 175s and the sensing electrode (SE) cover the sides of the protective layer 140. The top surface of the sub-drain electrode 175 s and the top surface of the sensing electrode (SE) protrude from the top surface of the protective layer 140 .

[0080] In one embodiment, the width of the sensing electrode (SE) is substantially the same as the width of the sub-channel layer 132s. For example, as shown in FIG. 4, the width of the sensing electrode (SE) along the first direction (X direction) is substantially the same as the width of the sub-channel layer 132s along the first direction (X direction). However, this is not limited thereto, and for example, the width of the sensing electrode (SE) along the first direction (X direction) may be larger than the width of the sub-channel layer 132s along the first direction (X direction). In this case, the sensing electrode (SE) may overlap the isolation structure 160 in the third direction (Z direction), but is not limited thereto. As another example, the width of the sensing electrode (SE) along the first direction (X direction) may be smaller than the width of the sub-channel layer 132s along the first direction (X direction).

[0081] The sub-drain electrode 175s and the sensing electrode (SE) include a conductive material. The sub-drain electrode 175s and the sensing electrode (SE) include the same material. In addition, the sub-drain electrode 175s and the sensing electrode (SE) include the same material as the main source electrode 173m and the main drain electrode 175m. The sub-drain electrode 175s and the sensing electrode (SE) are formed by the same process as the sub-drain electrode 175s, the sub-source electrode 173s, the main source electrode 173m, and the main drain electrode 175m.

[0082] For example, the sensing electrode (SE) may include a metal, a metal alloy, a conductive metal nitrate, a metal suicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal oxynitride. For example, the sensing electrode (SE) may be titanium nitrate (TiN), tantalum carbide (TaC), tantalum nitrate (TaN), titanium silicon nitrate (TiSiN), tantalum silicon nitrate (TaSiN), tantalum titanium nitrate (TaTiN), titanium aluminum nitrate (TiAlN), tantalum aluminum nitrate (TaAlN), tungsten nitrate (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride nitrate (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride nitrate (TaCN), tungsten The metals may include, but are not limited to, titanium (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitrate (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitrate (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or combinations thereof. The sensing electrode (SE) can be constructed as a single layer or multiple layers. The sensing electrode (SE) makes ohmic contact with the sub-channel layer 132s. The region in the sub-channel layer 132s that contacts the sensing electrode (SE) is doped at a relatively higher concentration than the other regions, but is not limited to this.

[0083] The sub-source electrode 173s is disposed on the other side of the sub-channel layer 132s. The sub-source electrode 173s is disposed spaced apart from the sub-channel layer 132s. For example, as shown in FIG. 4, the sub-source electrode 173s is spaced apart from the sub-channel layer 132s in the first direction (X direction). The sub-source electrode 173s is electrically isolated from the sub-channel layer 132s. For example, the sub-source electrode 173s and the sub-channel layer 132s are separated from each other by a separation structure 160. The sub-source electrode 173s extends in the second direction (Y direction) from one end of the main source electrode 173m. The sub-source electrode 173s refers to a portion of the source electrode 173 located in the peripheral circuit area (PA). In one embodiment, the sub-source electrode 173s comprises the same material as the sub-drain electrode 175s and the sensing electrode (SE). The sub-source electrode 173s contains the same material as the main source electrode 173m. The sub-source electrode 173s may be integrally formed in the same process as the main source electrode 173m, the sub-drain electrode 175s, and the sensing electrode (SE).

[0084] In one embodiment, the peripheral circuit elements 300 are separated from the main transistor 100 by an isolation structure 160 . That is, an isolation structure is disposed between the peripheral circuit element 300 and the main transistor 100 . The isolation structure 160 extends through the barrier layer 136 and recesses at least a portion of the sub-channel layer 132s, but is not limited to this. As a result, the sub-drift regions (DTRs) of the peripheral circuit elements 300 are electrically isolated from the main transistor 100. However, as another example, and not limited thereto, the isolation structure 160 may penetrate the barrier layer 136 and the sub-channel layer 132s. As another example, the peripheral circuit element 300 and the main transistor 100 may be separated by a trench that penetrates at least a portion of the sub-channel layer 132s and / or the main channel layer 132m. In one embodiment, the isolation structure 160 contacts the sensing electrode (SE). For example, as shown in FIG. 7, the isolation structure 160 contacts one side of the sensing electrode (SE). However, without being limited thereto, as another example, a barrier layer 136 may be further disposed between one side of the sensing electrode (SE) and the isolation structure 160 as shown in FIG.

[0085] In one embodiment, the isolation structure 160 is formed by forming a barrier layer 136 on the main channel layer 132 and the sub-channel layer 132s, and performing an ion implantation process in the barrier layer 136 disposed between the main transistor 100 and the peripheral circuit element 300. For example, in the region of the sub-channel layer 132s that overlaps the region of the barrier layer 136 where the ion implantation process is performed in the third direction (Z direction), there may be no two-dimensional electron gas or very little two-dimensional electron gas. At this time, the ion implanted region of the barrier layer 136 and the corresponding sub-channel layer 132 s region correspond to the isolation structure 160 . Alternatively, the isolation structure 160 may be formed by performing an ion implantation process on the sub-channel layer 132s. The ion-implanted regions of the sub-channel layer 132 s correspond to the isolation structures 160 . The substance used in the ion implantation process may be argon (Ar) ions. However, without being limited thereto, the isolation structure 160 may be formed by forming a barrier layer 136 on the main channel layer 132 and the sub-channel layer 132s, forming a trench penetrating the barrier layer 136, and then filling the trench with an insulating material.

[0086] The insulating material forming the isolation structure 160 includes the same material as the protective layer 140 . For example, the insulating material that makes up the isolation structures 160 may include oxides such as SiO2 and Al2O3. As another example, the insulating material comprising the isolation structures 160 may include nitrates such as SiN or acid nitrates such as SiON. However, the present invention is not limited thereto, and the insulating material forming the isolation structure 160 may include a material different from that of the protective layer 140 . At this time, at least a portion of the main channel layer 132 and / or the sub-channel layer 132s are both recessed.

[0087] The semiconductor device according to the embodiment of the present invention includes a Zener unit 400 and a sensing part 500 . The Zener unit 400 and the sensing part 500 are disposed outside the main element area (MA) and the peripheral circuit area (PA). The Zener unit 400 and the sensing part 500 are formed separately from the main transistor 100 and the peripheral circuit element 300 and are disposed outside the main element region (MA) and the peripheral circuit region (PA), but are not limited thereto. For example, the Zener unit 400 can be integrally formed with the main transistor 100 and the peripheral circuit element 300 in the same process.

[0088] In one embodiment, the Zener unit 400 includes a Zener diode (410 in FIG. 2). The Zener diode 410 includes a diode having a PN junction structure. The Zener diode 410 includes a semiconductor material. For example, the Zener diode 410 may include, but is not limited to, silicon (Si), and may also include the same material as the sub-channel layer 132s. Hereinafter, a case where the Zener unit 400 includes a Zener diode 410 will be described as an example.

[0089] The Zener diode 410 is electrically connected between the resistive element 310 and the main transistor 100 . For example, a Zener diode 410 is electrically connected between the sensing electrode (SE) and the sub-source electrode 173s. As a result, the Zener diode 410 is electrically connected to the main source electrode 173m via the sub-source electrode 173s. As an example, the anode (411 in FIG. 2) of the Zener diode 410 is electrically connected to the main source electrode 173m via the sub-source electrode 173s, and the cathode (411 in FIG. 2) of the Zener diode 410 is electrically connected to the sensing electrode (SE). The sensing unit 500 is electrically connected to the sensing electrodes (SE). The sensing unit 500 senses the voltage of the sensing electrode (SE) to detect a change in the voltage at one end of the main transistor 100 . The peripheral circuit element 300 of the semiconductor device according to the embodiment includes a resistive element 310 , and the Zener unit 400 includes a Zener diode 410 . The sensing unit 500 according to an embodiment senses the voltage of the sense electrode (SE) clipped by the Zener diode 410 , thereby detecting a change in the voltage at one end of the main transistor 100 .

[0090] Hereinafter, a resistor element of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. Figure 9 is a circuit diagram showing a resistor unit of a semiconductor device according to an embodiment of the present invention, Figure 10 is a plan view showing a semiconductor device according to the embodiment of Figure 9, Figure 11 is a cross-sectional view cut along line D-D' of Figure 10, and Figure 12 is a cross-sectional view corresponding to line D-D' of Figure 10 showing peripheral circuit elements of a semiconductor device according to an embodiment of the present invention.

[0091] The peripheral circuit element 300 of the semiconductor device according to the embodiment of FIGS. 10 to 12 corresponds to the resistive element 310 of the embodiment of FIG. The resistive element 310 according to one embodiment includes a plurality of resistive units (310_U) of the embodiment of FIG. Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device according to an embodiment is a resistor element 310 including a plurality of resistor units 310_U will be described. For convenience of explanation, only one resistor unit (310_U) is shown in FIG. 9 to 12 show various modifications of the semiconductor device according to the embodiment shown in FIGS. The embodiment shown in FIGS. 9 to 12 corresponds to the same parts as the embodiment shown in FIGS. 1 to 8, so a description thereof will be omitted and the differences will be mainly described. Furthermore, the same reference numerals are used for the same components as those in the previous embodiment.

[0092] First, referring to FIG. 9, a resistor element 310 of a semiconductor device according to an embodiment of the present invention includes a plurality of resistor units 310_U. Each of the plurality of resistor units (310_U) includes a resistor 312 in the sub-drift region (DTRs_U in FIG. 11), a first contact resistor 311, and a second contact resistor 313. The resistor 312, the first contact resistor 311, and the second contact resistor 313 of the sub-drift region (DTRs_U in FIG. 11) are connected in series between the first node (N1) and the third node (N3). In one embodiment, the first contact resistance 311 refers to the resistance of the first contact interface (CI1) between the first contact electrode (CT1) and the sub-channel layer 132s, and the second contact resistance 313 refers to the resistance of the second contact interface (CI2) between the second contact electrode (CT2) and the sub-channel layer 132s.

[0093] In one embodiment, the resistance value of each of the plurality of resistor units (310_U) has a constant value regardless of temperature. That is, the temperature coefficient of resistance (TCR) of each of the plurality of resistor units (310_U) is approximately "0". However, without being limited to this, the resistance value of each of the multiple resistance units (310_U) may increase or decrease as the temperature increases, and the total resistance value of the multiple resistance units (310_U) may have a constant value regardless of the temperature. As another example, the resistance value of each of the plurality of resistor units 310_U may increase or decrease as the temperature increases.

[0094] 10 and 11, a peripheral circuit element 300 of a semiconductor device according to an embodiment includes a plurality of resistor units 310_U. Each of the plurality of resistor units (310_U) includes a sub-channel layer 132s, a first contact electrode (CT1), and a second contact electrode (CT2). The sub-channel layer 132s is disposed between the first contact electrode (CT1) and the second contact electrode (CT2). The sub-channel layer 132s extends in the second direction (Y direction), but is not limited thereto. In one embodiment, the sub-channel layer 132s includes a sub-drift region (DTRs_U). The sub-drift regions (DTRs_U) function as elements having a predetermined resistance value. That is, the region of the sub-channel layer 132s from the first contact electrode (CT1) to the second contact electrode (CT2) has a predetermined resistance value.

[0095] At this time, the resistance (312 in FIG. 9) of the sub-drift region (DTRs_U) has a value that varies depending on the temperature. For example, the resistance (312 in FIG. 9) of the sub-drift region (DTRs_U) increases with increasing temperature. That is, the resistor (312 in FIG. 9) in the sub-drift region (DTRs_U) has a temperature coefficient of resistance (TCR) with a positive sign. For example, the temperature coefficient of resistance of the sub-drift region (DTRs_U) is about 5 (Ω / μm° C.) to about 15 (Ω / μm° C.). As a result, the resistance (312 in FIG. 9) of the sub-drift region (DTRs_U) increases as the temperature increases.

[0096] The first contact electrode (CT1) and the second contact electrode (CT2) are disposed on both sides of the sub-channel layer 132s. The first contact electrode (CT1) and the second contact electrode (CT2) are in contact with the sub-channel layer 132s and are electrically connected to the sub-channel layer 132s. The first contact electrode (CT1) and the second contact electrode (CT2) are disposed outside the sub-drift region (DTRs_U). The interface between the first contact electrode (CT1) and the sub-channel layer 132s is one side end of the sub-drift region (DTRs_U). Similarly, the interface between the second contact electrode (CT2) and the sub-channel layer 132s is the other end of the sub-drift region (DTRs_U). The first contact electrode (CT1) and the second contact electrode (CT2) are disposed in a space formed by at least a portion of the sub-channel layer 132s being recessed. The first contact electrode (CT1) and the second contact electrode (CT2) penetrate the barrier layer 136 and contact the side surface of the sub-channel layer 132s.

[0097] In one embodiment, the first contact electrode (CT1) and the second contact electrode (CT2) contact the barrier layer 136. For example, one side surface of the first contact electrode (CT1) and one side surface of the second contact electrode (CT2) facing each other are in contact with the barrier layer 136. In addition, the other side of the first contact electrode CT1 opposite to the one side thereof and the other side of the second contact electrode CT2 opposite to the one side thereof contact the isolation structure 160, but are not limited thereto. As another example, as shown in FIG. 12, the other side surface opposite to the one side surface of the first contact electrode (CT1) and the other side surface opposite to the one side surface of the second contact electrode (CT2) may be in contact with the barrier layer 136. In this case, a barrier layer 136 is further disposed between the isolation structure 160 and the contact electrodes (CT1, CT2).

[0098] In one embodiment, the first contact electrode (CT1) and the second contact electrode (CT2) make ohmic contact with the sub-channel layer 132s. At this time, a first contact interface (CI1) between the first contact electrode (CT1) and the sub-channel layer 132s and a second contact interface (CI2) between the second contact electrode (CT2) and the sub-channel layer 132s have a resistance component. Specifically, in the process in which carriers passing through the two-dimensional electron gas 134 pass through at least a portion of the sub-channel layer 132s, i.e., the upper portion of the two-dimensional electron gas 134, and are transmitted to the sensing electrode (SE), the first contact interface (CI1) between the first contact electrode (CT1) and the sub-channel layer 132s and the second contact interface (CI2) between the second contact electrode (CT2) and the sub-channel layer 132s have a predetermined resistance value. Hereinafter, for the convenience of explanation, the resistance of the first contact interface (CI1) between the first contact electrode (CT1) and the sub-channel layer 132s corresponds to the first contact resistance 311, and the resistance of the second contact interface (CI2) between the second contact electrode (CT2) and the sub-channel layer 132s corresponds to the second contact resistance 313.

[0099] In one embodiment, the first contact resistor 311 and the second contact resistor 313 have different values ​​depending on the temperature. For example, the first contact resistance 311 and the second contact resistance 313 decrease as the temperature increases. That is, the first contact resistor 311 and the second contact resistor 313 have a temperature coefficient of resistance (TCR) with a negative sign. For example, the temperature coefficient of resistance (TCR) of the first contact resistor 311 and the second contact resistor 313 is about -20 (Ω / °C) to about -10 (Ω / °C). In one embodiment, therefore, the temperature coefficient of resistance (TCR) of the first contact resistor 311 and the second contact resistor 313 is greater than the temperature coefficient of resistance of the sub-drift region (DTRs_U), but is not limited to this.

[0100] In one embodiment, the sum of the first contact resistance 311, the second contact resistance 313, and the resistance 312 of the sub-drift region (DTRs_U) has a constant value regardless of temperature. At this time, the extension length of the sub-drift regions (DTRs_U) is 1 μm to 10 μm, and preferably 3 μm to 4 μm. However, the present invention is not limited to this, and the sum of the first contact resistance 311, the second contact resistance 313, and the resistance 312 of the sub-drift region (DTRs_U) may increase or decrease as the temperature increases. The first contact electrode (CT1) and the second contact electrode (CT2) are formed simultaneously in the same process as the sensing electrode (SE). The first contact electrode (CT1) and the second contact electrode (CT2) are arranged in the same layer as the sensing electrode (SE). In addition, the first contact electrode (CT1) and the second contact electrode (CT2) include the same material as the sensing electrode (SE).

[0101] Hereinafter, peripheral circuit elements of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. 13 is a circuit diagram showing a semiconductor device according to an embodiment of the present invention, FIG. 14 is a timing diagram showing the gate voltage, first power supply voltage, and sense voltage of the semiconductor device according to the embodiment of FIG. 13, FIG. 15 is a plan view showing the semiconductor device according to the embodiment of FIG. 13, FIG. 16 is a cross-sectional view taken along line E-E' of FIG. 15, FIGS. 17 and 18 are cross-sectional views corresponding to line E-E' of FIG. 15 showing peripheral circuit elements of a semiconductor device according to an embodiment of the present invention, FIG. 19 is a plan view showing peripheral circuit elements of a semiconductor device according to an embodiment of the present invention, FIG. 20 is a cross-sectional view taken along line F-F' of FIG. 18, and FIG. 21 is a plan view showing a semiconductor device according to an embodiment of the present invention. The peripheral circuit element 300 of the semiconductor element according to the embodiment of FIGS. 13 to 21 corresponds to the diode element 320 of the embodiment of FIG. 13 to 21 corresponds to the Zener diode 410 in the embodiment of FIG. Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device according to the embodiment of the present invention includes a diode element 320 and the Zener unit 400 includes a Zener diode 410 will be described.

[0102] 13 to 21 show various modifications of the semiconductor device according to the embodiment of the present invention shown in FIGS. The embodiment shown in FIGS. 13 to 21 corresponds to the same parts as the embodiment shown in FIGS. 1 to 8, so a description thereof will be omitted and the differences will be mainly described. The same reference numerals are used for the same components as those in the previous embodiment. First, referring to FIG. 13, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention includes a diode element 320. The semiconductor device according to the embodiment of the present invention also includes a sensing resistor element 420 electrically connected to the diode element 320 and the Zener diode 410 .

[0103] The diode element 320 is electrically connected to the first electrode (D) of the main transistor 100. In addition, the diode element 320 is electrically connected to the Zener diode 410 and the sensing unit 500 . Specifically, the cathode 321 of the diode element 320 is connected to one end of the main transistor 100 via a first node (N1). For example, the cathode 321 of the diode element 320 is electrically connected to the first electrode (D) of the main transistor 100 via a first node (N1). That is, in one embodiment, the cathode 321 of the diode element 320 is electrically connected to the main drain electrode (175m in FIG. 15) of the main transistor 100 via the first node (N1). Furthermore, the cathode 321 of the diode element 320 is connected to a first power supply having a first power supply voltage (VD) via a first node (N1). As a result, the cathode 321 of the diode element 320 is supplied with the first power supply voltage (VD). The anode 322 of the diode element 320 is electrically connected to the Zener diode 410 and the sensing unit 500 via a third node N3. In one embodiment, the cathode 321 of the diode element 320 corresponds to the sub-drain electrode (175s in FIG. 15), and the anode 322 of the diode element 320 corresponds to the top electrode (CT in FIG. 15). The third node (N3) is a point corresponding to the sensing electrode (SE in FIG. 15).

[0104] In one embodiment, the diode element 320 may conduct current at forward voltages greater than a threshold voltage (VOth) but not at reverse voltages. Here, the forward direction means the direction from the anode 322 to the cathode 321 of the diode element 320 , and the reverse direction means the direction from the cathode 321 to the anode 322 of the diode element 320 . That is, the magnitude of the voltage applied to the anode 322 of the diode element 320 is greater than the magnitude of the voltage applied to the cathode 321 and the threshold voltage (V Oth ) is greater than the sum of the magnitudes of the currents, a current flows through the diode element 320.

[0105] According to one embodiment, a sense voltage (V a ) is applied to the anode 322 of the diode element 320, and a first power supply voltage (V D ) is applied. Therefore, the threshold voltage (V Oth ) minus the magnitude of (Va-V Oth , hereinafter referred to as the "reference value") is the first power supply voltage (V D ) is greater than (Va-V Oth >V D ), the current flows along the third path (C3). In addition, the reference value is the first power supply voltage (V D ) is smaller than (Va-V Oth <V D ), there are cases where no current flows through the diode element 320. At this time, the threshold voltage (V Oth ) is the breakdown voltage (V Zth ), but is not limited to. For example, the threshold voltage (V Oth ) is the breakdown voltage (V Zth ) smaller than Due to this characteristic, the diode element 320 can play a role in clipping the sense voltage (Va) of the third node (N3). This will be explained with reference to FIG.

[0106] The sensing resistive element 420 is electrically connected to the diode element 320 . One end of the sensing resistor element 420 is electrically connected to the anode 322 of the diode element 320 via a third node (N3). In addition, one end of the sensing resistive element 420 is electrically connected to the sensing unit 500 and the cathode 411 of the Zener diode 410 through a third node N3. The other end of the sensing resistor element 420 is connected to a third power supply voltage (V DC) is electrically connected to a third power source that supplies Third power supply voltage (V DC ) is the breakdown voltage (V Zth ) is greater than. In one embodiment, the sensing unit 500 senses the sense voltage (Va) of the third node (N3). The sensing unit 500 detects a change in the voltage at one end of the main transistor 100 based on the sense voltage (Va). For example, the sensing unit 500 may determine the first power supply voltage (V D ) is equal to the sense voltage (V a ) of the third node (N3) and the threshold voltage (V Oth ) to find intervals that are smaller than the difference. As another example, the sensing unit 500 may be configured to determine the first power supply voltage (V D ) can be detected to calculate the period in which the main transistor 100 turns on.

[0107] Referring further to FIG. 14, the first power supply voltage (V D ) is the reference value (Va-V Oth ) is greater than. This is the case when a reverse voltage is applied to the diode element 320, and there are cases where no current flows through the diode element 320. That is, the current may not flow along the third path (C3). On the other hand, the third power supply voltage (V DC ) is the breakdown voltage (V Zth ), so that the magnitude of the sense voltage (V a ) is greater than the breakdown voltage (V Zth ) is greater than. This means that the Zener diode 410 has a breakdown voltage (V Zth ) is applied, and current flows through the Zener diode 410. That is, the current flows along the fourth path (C4). As a result, in the first section (T1) and the second section (T2), the sense voltage (Va) is equal to the breakdown voltage (V) of the Zener diode 410. Zth ) is essentially the same as

[0108] In addition, in the third section (T3), the first power supply voltage (V D ) is the reference value (Va-V Oth ) smaller than This is the case when a forward voltage is applied to the diode element 320, causing a current to flow through the diode element 320. That is, the current flows along the third path (C3). That is, the current is DC ) through the sensing resistive element 420 to the third node (N3) and through the diode element 320 to the first node (N1). This causes a voltage drop across the sense resistive element 420, decreasing the sense voltage (Va). Therefore, as the sense voltage (V a ) decreases, the magnitude of the sense voltage (V a ) decreases with the breakdown voltage (V Zth ) may be smaller. This means that the Zener diode 410 has a breakdown voltage (V Zth ) is applied, and no current may flow through the Zener diode 410. As a result, in the third section (T3), the sense voltage (Va) is equal to the first power supply voltage (V D ) fluctuates similarly to the fluctuating profile.

[0109] In addition, in the fourth section (T4) and the fifth section (T5), the first power supply voltage (V D ) is the reference value (Va-V Oth ) is greater than. This is the case when a reverse voltage is applied to the diode element 320, and there are cases where no current flows through the diode element 320. In addition, a current flows through the Zener diode 410 . Meanwhile, the start point of the fourth section (T4) is the point at which the diode element 320 is turned off. That is, the current flows along the third path (C3) and the first power supply voltage (V D As the voltage Vcc increases, the diode element 320 turns off at the start of the fourth section T4. At this time, a peak voltage (V P ) may occur. That is, the third node (N3) has a peak voltage (V P ) may be supplied. Here, the peak voltage (V P ) refers to transient voltages due to ringing phenomena.

[0110] In one embodiment, a peak voltage (V P ) is supplied, the peak voltage (V P ) is the breakdown voltage (V Zth ), the sense voltage (V a ) at the third node (N3) is limited to a certain magnitude (for example, a breakdown voltage (V Zth ) size). In summary, the first power supply voltage (V D ), the sense voltage (V a ) of the third node (N3), and the threshold voltage (V Oth The magnitude of the sensed voltage (Va) at the third node (N3) varies depending on the magnitude of the difference between the first node (N1) and the second node (N2). The sensing unit 500 senses the sense voltage (Va) of the third node (N3) and detects whether the sense voltage (Va) is outside the range of the preset first power supply voltage (VD). That is, the sensing unit 500 according to an embodiment can detect whether the voltage applied to one end of the main transistor 100 of the semiconductor device is outside a predetermined range.

[0111] Next, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. The peripheral circuit element 300 of the semiconductor device according to the embodiment of the present invention corresponds to the diode element 320 of FIG. Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device according to the embodiment of the present invention is a diode element 320 will be described. 15 to 19, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention includes a sub-channel layer 132s connected to a main drain electrode 175m and including a drift region having two-dimensional electron gas, a barrier layer 136 disposed on the sub-channel layer 132s, a sub-gate electrode 185 disposed on the barrier layer 136, and a sensing electrode (SE) and a sub-drain electrode 175s disposed spaced apart from each other on the sub-channel layer 132s.

[0112] The sub-channel layer 132s extends in a first direction (X direction). For example, as shown in FIG. 15, the sub-channel layer 132s extends in a first direction (X direction) from one side of the sub-drain electrode 175s. However, this is merely an example, and the sub-channel layer 132s may further include a portion extending in a direction intersecting the first direction (X direction) and may include a plurality of bent portions. In one embodiment, one end of the sub-channel layer 132s contacts the sub-drain electrode 175s. The sub-channel layer 132s is electrically connected to the main drain electrode 175m via a sub-drain electrode 175s.

[0113] The sub-gate electrode 185 is disposed on the barrier layer 136 . The sub-gate electrode 185 overlaps a portion of the barrier layer 136 in the vertical direction (for example, in the thickness direction of the sub-channel layer 132s). The sub-gate electrode 185 overlaps a portion of the sub-drift regions (DTRs) of the sub-channel layer 132s in the vertical direction (eg, in the thickness direction of the sub-channel layer 132s). The sub-gate electrode 185 is disposed between the sense electrode (SE) and the sub-drain electrode 175s. The sub-gate electrode 185 is spaced apart from the sensing electrode (SE) and the sub-drain electrode 175s. For example, the sub-gate electrode 185 is positioned closer to the sense electrode (SE) than the sub-drain electrode 175s. That is, the distance between the sub-gate electrode 185 and the sensing electrode (SE) is smaller than the distance between the sub-gate electrode 185 and the sub-drain electrode 175s, but is not limited to this.

[0114] The sub-gate electrode 185 includes a conductive material. The sub-gate electrode 185 includes the same material as the main gate electrode 155 . In one embodiment, the sub-gate electrode 185 may be formed simultaneously with the main gate electrode 155 in the same process. The sub-gate electrode 185 is disposed in the same layer as the main gate electrode 155 . That is, the sub-gate electrode 185 is disposed on the sub-gate semiconductor layer 182 , and the main gate electrode 155 is disposed on the gate semiconductor layer 152 . At this time, the lower surface of the sub-gate electrode 185 is positioned at substantially the same level as the lower surface of the main gate electrode 155 . The thickness of the sub-gate electrode 185 in the third direction (Z direction) is substantially the same as the thickness of the main gate electrode 155 in the third direction (Z direction).

[0115] However, the present invention is not limited to this, and the sub-gate electrode 185 can also be disposed in a layer different from that of the main gate electrode 155 . For example, as shown in FIG. 17, the sub-gate electrode 185 is disposed directly above the upper surface of the barrier layer 136 . That is, there are cases where the sub-gate semiconductor layer 182 cannot be disposed between the sub-gate electrode 185 and the barrier layer 136 . The sub-gate electrode 185 contacts the upper surface of the barrier layer 136 . As another example, as shown in FIG. 18, the sub-gate electrodes 185 can be formed integrally with the sensing electrodes (SE) in the same process. The sub-gate electrode 185 includes the same material as the sensing electrode (SE), but is not limited thereto, and the sub-gate electrode 185 may include a different material from the sensing electrode (SE). In this case, the sub-gate electrode 185 is disposed directly on the upper surface of the barrier layer 136, but this is not limited to this. A sub-gate semiconductor layer 182 may be further disposed on the upper surface of the barrier layer 136, and the sub-gate electrode 185 may be disposed on the sub-gate semiconductor layer 182.

[0116] The sub-gate semiconductor layer 182 is disposed between the barrier layer 136 and the sub-gate electrode 185 . That is, a sub-gate semiconductor layer 182 is disposed on the barrier layer 136 , and a sub-gate electrode 185 is disposed on the sub-gate semiconductor layer 182 . The sub-gate electrode 185 makes a Schottky contact or an ohmic contact with the sub-gate semiconductor layer 182 . The sub-gate semiconductor layer 182 overlaps the sub-gate electrode 185 in the vertical direction (for example, in the thickness direction of the sub-channel layer 132s).

[0117] In addition, the peripheral circuit element 300 of the semiconductor device according to an embodiment further includes a connection portion (CP) and a through via 190 . The connection portion (CP) extends from one side of the sensing electrode (SE) along a first direction. The contact points (CP) are disposed on the protective layer 140 . The connection portion (CP) covers the top surface of the protective layer 140 . The contact portion (CP) covers at least a part of the sub-gate electrode 185 . The connection portion (CP) overlaps with the sub-channel layer 132s in the third direction (Z direction), but is not limited thereto. The through via 190 penetrates the protective layer 140 and is connected to the sub-gate electrode 185 . The through via 190 electrically connects the connection portion (CP) and the sub-gate electrode 185. In one embodiment, the sensing electrode (SE) can be integrally formed with the connection portion (CP) and the through via 190, but is not limited to this. For example, the sensing electrodes (SE) can be integrally formed in the same process as the connection portions (CP) and through vias 190.

[0118] In one embodiment, the connection point (CP) can have various shapes. For example, as shown in FIG. 16, the connection portion (CP) extends in the first direction (X direction). As another example, as shown in FIG. 19, the connection portion (CP) may further include a portion extending in a direction intersecting the first direction (X direction). The connection portion (CP) may include a portion extending in the second direction (Y direction) at a point where it contacts the sensing electrode (SE), a portion extending in the first direction (X direction), and a portion extending in the second direction (Y direction) at a point where it contacts the through via 190. At this time, the connection portion (CP) may overlap the separation structure 160 in the third direction (Z direction). As another example, the connection portion (CP) may include multiple bent portions or have a bent shape.

[0119] As a result, the sensing electrode (SE) is electrically connected to the sub-gate electrode 185 through the connection portion (CP) and the through via 190. Thus, the peripheral circuit element 300 of the semiconductor device according to one embodiment functions as the diode element 320 of FIG. Specifically, the top electrode (CT) including the sensing electrode (SE), the sub-gate electrode 185, the connection portion (CP), and the through via 190 is the anode 322 of the diode element 320 in FIG. 13, and the sub-drain electrode 175s is the cathode 321 of the diode element 320 in the embodiment of FIG. 13.

[0120] 20 and 21, a sensing resistor element 420 of a semiconductor device according to an embodiment of the present invention is disposed in a peripheral circuit area (PA). The sensing resistor element 420 of the semiconductor device according to an embodiment includes a channel pattern 425 , a first electrode 421 , and a second electrode 422 . The channel pattern 425 extends in a first direction (X direction). For example, but not limited to, the channel pattern 425 extends in the same direction as the sub-channel layer 132s. The remaining description of the channel pattern 425 is omitted because it is substantially the same as the description of the sub-channel layer 132s. In one embodiment, the barrier layer 136 extends over the channel pattern 425 . As a result, the region of the channel pattern 425 that overlaps with the barrier layer 136 becomes the drift region.

[0121] The channel pattern 425 includes a first drift region 428 between the first electrode 421 and the second electrode 422 . That is, the first drift region 428 refers to the region of the channel pattern 425 from one side of the channel pattern 425 in contact with the second electrode 422 to the first electrode 421 . The first drift region 428 refers to a region of the channel pattern 425 that overlaps with the barrier layer 136 between the first electrode (SE) and the second electrode 422 . For example, the boundary where the second electrode 422 and the channel pattern 425 meet is one end of the first drift region 428 , and the boundary where the first electrode 421 and the channel pattern 425 meet is the other end of the first drift region 428 . That is, the first drift region 428 refers to a region where carriers move between one side of the channel pattern 425 contacting the second electrode 422 and the first electrode 421 . At this time, the first drift region 428 has a resistance component. That is, the first drift region 428 functions as a sensing resistive element (420 in FIG. 13) having a predetermined resistance value. That is, the region of the channel pattern 425 from the first electrode 421 to the second electrode 422 has a predetermined resistance value.

[0122] The first electrode 421 and the second electrode 422 penetrate the protective layer 140 and the barrier layer 136 and contact the channel pattern 425 . In one embodiment, the first electrode 421 is electrically connected to a sensing electrode (SE). The first electrode 421 is electrically connected to the Zener unit 400 and the sensing part 500 . The second electrode 422 is electrically connected to a third power supply that supplies a third power supply voltage (VDC). The first electrode 421 and the second electrode 422 can be formed simultaneously in the same process as the sensing electrode (SE), but are not limited to this. In the embodiment of Figures 20 and 21, the sense resistive element 420 is described as being located within a peripheral area (PA) according to one non-limiting embodiment. For example, the sensing resistive element 420 may be disposed within the Zener unit 400 . Alternatively, the sensing resistive element 420 can be located within the sensing portion 500 .

[0123] Hereinafter, peripheral circuit elements of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. 22 is a circuit diagram showing a semiconductor device according to an embodiment of the present invention, FIG. 23 is a timing diagram showing the gate voltage, first power supply voltage, and sensing voltage of the semiconductor device according to the embodiment of FIG. 22, FIG. 24 is a plan view showing the semiconductor device according to the embodiment of FIG. 22, and FIG. 25 is a cross-sectional view taken along line G-G' of FIG. 24. The peripheral circuit element 300 of the semiconductor device according to the embodiment of FIGS. 22 to 25 corresponds to the sub-transistor element 330 of the embodiment of FIG. 22 to 25 corresponds to the Zener diode 410 in the embodiment of FIG. Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device includes a sub-transistor element 330 and the Zener unit 400 includes a Zener diode 410 according to an embodiment will be described.

[0124] 22 to 25 show various modifications of the semiconductor devices according to the embodiments shown in FIGS. 13 to 21. In FIG. The embodiment shown in FIGS. 22 to 25 corresponds to the same parts as the embodiment shown in FIGS. 13 to 21, so a description thereof will be omitted and the following description will focus on the differences. The same reference numerals are used for the same components as those in the previous embodiment. Referring first to FIG. 22, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention includes a sub-transistor element 330.

[0125] The sub-transistor element 330 is electrically connected to the first electrode (D) of the main transistor 100 . In addition, the sub-transistor element 330 is electrically connected to the Zener diode 410 and the sensing unit 500 . The sub-transistor element 330 includes a gate electrode (G1), a first electrode, and a second electrode. The sub-transistor element 330 controls a drain-source current between the first electrode and the second electrode according to a signal applied to the gate electrode G1. A sub-gate voltage (VG1) is applied to the gate electrode (G1) of the sub-transistor element 330. A first electrode of the sub-transistor element 330 is connected to a first electrode (D) of the main transistor 100 via a first node (N1). Also, a first electrode of the sub-transistor element 330 is connected to a first power supply having a first power supply voltage (VD) via a first node (N1). This allows the first electrode of the sub-transistor element 330 to be supplied with the first power supply voltage (VD).

[0126] The second electrode of the sub-transistor element 330 is electrically connected to the Zener diode 410 and the sensing unit 500 through a third node N3. In one embodiment, the first electrode of the sub-transistor element 330 corresponds to the sub-drain electrode (175s in FIG. 24), and the gate electrode (G1) of the sub-transistor element 330 corresponds to the sub-gate electrode (185 in FIG. 24). Also, the third node (N3) may be a point corresponding to the sensing electrode (SE in FIG. 24). In one embodiment, the sensing unit 500 senses the sense voltage (Va) of the third node (N3). The sensing unit 500 detects a change in the voltage at one end of the main transistor 100 based on the sense voltage (Va). For example, the sensing unit 500 may determine the first power supply voltage (V D ) is the magnitude of the sub-gate voltage (VG1) and the threshold voltage (V th ) to find intervals that are smaller than the difference.

[0127] Referring to FIG. 23 further, the first power supply voltage (V D ) is the magnitude of the sub-gate voltage (V G1 ) and the threshold voltage (V th ) may be larger than the difference. This is when the sub-transistor element 330 is turned off and no current may flow through the sub-transistor element 330 . At this time, the sense voltage (Va) of the third node (N3) has a predetermined magnitude. In addition, in the third section (T3), the first power supply voltage (V D ) is the magnitude of the sub-gate voltage (V G1 ) and the threshold voltage (V th ) is smaller than the difference. This is when the sub-transistor element 330 turns on, causing current to flow through the sub-transistor element 330 . At this time, the sense voltage (V a ) of the third node (N3) is equal to the breakdown voltage (V Zth ), current may not flow through the Zener diode 410. As a result, in the third section (T3), the sense voltage (Va) is equal to the first power supply voltage (V D ) can vary in the same way as the varying profile. However, the present invention is not limited to this, and the sense voltage (V a ) of the third node (N3) may be equal to or greater than the breakdown voltage (V Zth ) may be larger. In this case, the current flows along the fifth path (C5), so that the magnitude of the sensed voltage (V a ) at the third node (N3) is equal to or greater than the breakdown voltage (V Zth ) is essentially the same as

[0128] In addition, in the fourth section (T4) and the fifth section (T5), the first power supply voltage (V D ) is the magnitude of the sub-gate voltage (V G1 ) and the threshold voltage (V th ) may be larger than the difference. At this time, there are cases where no current flows through the sub-transistor element 330. Meanwhile, the start point of the fourth period T4 is the point at which the sub-transistor device 330 is turned off. That is, the first power supply voltage (V D ) increases, the sub-transistor element 330 may be turned off at the start of the fourth period (T4). At this time, a peak voltage (V P ) occurs. That is, the third node (N3) has a peak voltage (V P ) may be supplied. Here, the peak voltage (V P ) refers to transient voltages due to ringing phenomena. In one embodiment, when a peak voltage (VP) is supplied to the third node (N3), the peak voltage (V P ) is the breakdown voltage (V Zth), the current flows through the Zener diode 410 along the fifth path (C5), and the sense voltage (V a ) at the third node (N3) is equal to or greater than the breakdown voltage (V Zth ) is essentially the same as That is, the third node (N3) has a peak voltage (V P ) is supplied, the magnitude of the sense voltage (Va) at the third node (N3) can be maintained constant by the Zener diode 410.

[0129] In summary, the first power supply voltage (V D ) and the sub-gate voltage (V G1 ) and the threshold voltage (V th The magnitude of the sensed voltage (Va) at the third node (N3) varies depending on the magnitude of the difference between the voltages (Va) and (N3). The sensing unit 500 according to an embodiment senses the sense voltage (V a ) of the third node (N3) and supplies a preset first power supply voltage (V D ) range can be detected. That is, the sensing unit 500 according to an embodiment of the present invention can detect when the voltage applied to one terminal of the main transistor 100 of the semiconductor device is outside a predetermined range.

[0130] Next, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. The peripheral circuit element 300 of the semiconductor device according to the embodiment of the present invention corresponds to the sub-transistor element 330 of FIG. Hereinafter, a case where the peripheral circuit element 300 of the semiconductor device according to the embodiment of the present invention is a sub-transistor element 330 will be described. 24 and 25, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention includes a sub-channel layer 132s connected to an in-drain electrode 175m and including a drift region having two-dimensional electron gas, a barrier layer 136 disposed on the sub-channel layer 132s, a sub-gate electrode 185 disposed on the barrier layer 136, and a sensing electrode (SE) and a sub-drain electrode 175s spaced apart from each other on the sub-channel layer 132s.

[0131] The sub-channel layer 132s extends in a first direction (X direction). For example, as shown in FIG. 24, the sub-channel layer 132s extends in a first direction (X direction) from one side of the sub-drain electrode 175s. However, this is merely an example, and the sub-channel layer 132s may further include a portion extending in a direction intersecting the first direction (X direction) or may include a plurality of bent portions. In one embodiment, one end of the sub-channel layer 132s contacts the sub-drain electrode 175s. The sub-channel layer 132s is electrically connected to the main drain electrode 175m via a sub-drain electrode 175s. The sub-gate electrode 185 is disposed on the barrier layer 136 . The sub-gate electrode 185 corresponds to the gate electrode (G1 in FIG. 22) of the sub-transistor element (330 in FIG. 22). The sub-gate semiconductor layer 182 is disposed between the barrier layer 136 and the sub-gate electrode 185 . The description of the sub-gate electrode 185 and the sub-gate semiconductor layer 182 is substantially the same as the description of the sub-gate electrode 185 and the sub-gate semiconductor layer 182 in the embodiment of FIGS. 13 to 21, and therefore will be omitted. In one embodiment, the sense electrode (SE) corresponds to the second electrode of the sub-transistor element (330 in FIG. 22), and the sub-drain electrode 175s corresponds to the second electrode of the sub-transistor element (330 in FIG. 22).

[0132] The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the technical scope of the present invention. [Explanation of symbols]

[0133] 100 Main Transistor 110 Substrate 120 buffer layer 121 seed layer 124 Superlattice layer 126 High resistance layer 132 Channel Layer 132m main channel layer 132s subchannel layer 134 Two-dimensional electron gas 136 Barrier Layer 140 Protective layer 152 Gate semiconductor layer 155 Main gate electrode 160 Separation Structure 173 Source electrode 173m Main source electrode 173s Sub-source electrode 175 Drain electrode 175m Main drain electrode 175s sub-drain electrode 300 Peripheral circuit elements 310 Resistor element 320 Diode element 330 Sub-transistor element 400 Zener Unit 410 Zener diode 411 Cathode 412 Anode 500 sensing part

Claims

1. The main transistor, a peripheral circuit element electrically connected to one end of the main transistor; a Zener diode electrically connected between the other end of the main transistor and the peripheral circuit element, The main transistor is The main channel layer, a barrier layer on the main channel layer, the barrier layer including a material having a different energy band gap from that of the main channel layer; a main gate electrode on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the main gate electrode; a main source electrode and a main drain electrode disposed on each side of the main gate electrode and electrically connected to the main channel layer, The peripheral circuit element is a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sensing electrode disposed on the sub-channel layer; The semiconductor device, wherein the Zener diode is electrically connected between the sensing electrode and the main source electrode.

2. the peripheral circuit element further includes a sub-drain electrode electrically connected to the sub-channel layer; The semiconductor device of claim 1 , wherein the sub-drain electrode is disposed in the same layer as the main drain electrode.

3. the peripheral circuit element further includes a sub-source electrode electrically connected to the main source electrode and spaced apart from the sub-channel layer; the sub-source electrode is disposed in the same layer as the main source electrode, The semiconductor device of claim 2 , wherein the sub-channel layer is disposed in the same layer as the main channel layer.

4. an anode of the Zener diode electrically connected to the main source electrode; The semiconductor device according to claim 1 , wherein the cathode of the Zener diode is electrically connected to the sensing electrode.

5. 2. The semiconductor device of claim 1, wherein the width of the sub-channel layer is smaller than the width of the main channel layer.

6. 2. The semiconductor device of claim 1, wherein the peripheral circuit element comprises a resistor element between the main drain electrode and the sensing electrode, the resistor element being formed by a resistor of the drift region of the sub-channel layer.

7. The semiconductor device of claim 6 , wherein the resistor element further comprises a contact electrode disposed on the sub-channel layer and between the sensing electrode and the main drain electrode.

8. The semiconductor device of claim 7 , wherein the contact electrode is disposed in the same layer as the sensing electrode and includes the same material as the sensing electrode.

9. The peripheral circuit element is a sub-drain electrode electrically connected to the sub-channel layer and disposed in the same layer as the main drain electrode; The semiconductor device of claim 1 , further comprising a sub-gate electrode disposed on the sub-channel layer and between the sensing electrode and the sub-drain electrode.

10. The semiconductor device of claim 9 , wherein the sub-gate electrode is disposed in the same layer as the main gate electrode and includes the same material as the main gate electrode.

11. the peripheral circuit element includes a diode element constituting the sub-gate electrode electrically connected to the sensing electrode; 10. The semiconductor device according to claim 9, wherein the breakdown voltage of the Zener diode is less than a threshold voltage of the diode element.

12. the barrier layer further extends onto the sub-channel layer; The semiconductor device of claim 9 , wherein the barrier layer is disposed between the sub-channel layer and the sub-gate electrode.

13. The semiconductor device of claim 12 , wherein the peripheral circuit element further comprises a sub-gate semiconductor layer disposed between the barrier layer and the sub-gate electrode.

14. The peripheral circuit element is a protective layer covering the barrier layer; The semiconductor device of claim 12 , further comprising: a connection portion disposed on the protection layer and connecting the sub-gate electrode and the sensing electrode.

15. 2. The semiconductor device of claim 1, further comprising an isolation structure disposed on the sub-channel layer between the peripheral circuit element and the main transistor and extending into the barrier layer.

16. The main transistor, a resistive element electrically connected to one end of the main transistor; a Zener diode electrically connected between the other end of the main transistor and the resistance element, The main transistor is The main channel layer, a barrier layer disposed on the main channel layer and including a material having an energy band gap different from that of the main channel layer; a gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the gate electrode; a main source electrode and a main drain electrode disposed on each side of the gate electrode and electrically connected to the main channel layer; The resistive element is a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sub-drain electrode electrically connected to one side of the sub-channel layer and extending from one end of the main drain electrode; a sensing electrode electrically connected to the other side of the sub-channel layer; the width of the sub-channel layer is smaller than the width of the main channel layer; The semiconductor device, wherein the Zener diode is electrically connected between the sensing electrode and the main source electrode.

17. the barrier layer further extends onto the sub-channel layer; The semiconductor device of claim 16 , wherein the sub-drain electrode and the sensing electrode penetrate the barrier layer.

18. The main transistor, a sub-transistor element electrically connected to one end of the main transistor; a Zener diode electrically connected between the other end of the main transistor and the sub-transistor element, The main transistor is The main channel layer, a barrier layer disposed on the main channel layer and including a material having an energy band gap different from that of the main channel layer; a gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the gate electrode; a main source electrode and a main drain electrode disposed on each side of the gate electrode and electrically connected to the main channel layer; The sub-transistor is a sub-channel layer electrically connected to the main drain electrode and including a drift region having a two-dimensional electron gas; a sub-drain electrode electrically connected to the sub-channel layer and extending from one end of the main drain electrode; a sensing electrode electrically connected to the sub-channel layer; a sub-gate electrode disposed on the sub-channel layer and between the sub-drain electrode and the sensing electrode; The semiconductor device, wherein the Zener diode is electrically connected between the sensing electrode and the main source electrode.

19. 20. The semiconductor device of claim 18, wherein a threshold voltage of the sub-transistor device is greater than a breakdown voltage of the Zener diode.

20. the barrier layer extends over the sub-channel layer; The sub-transistor is a protective layer covering the barrier layer and the sub-gate electrode; The semiconductor device of claim 18 , further comprising: a connection portion disposed on the protection layer and electrically connected between the sub-gate electrode and the sensing electrode.

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