Semiconductor device

Abstract

To provide a semiconductor device capable of enhancing bond strength of a semiconductor element.SOLUTION: A semiconductor device A1 includes an island lead 6, a semiconductor element 8, a joint material 901, and a sealing resin 9. The island lead 6 has a main surface 601 and a first recess 610. The first recess 610 includes a bottom surface 611, and one or more first side faces 612. The semiconductor element 8 is partially stored in the first recess 610, and has an element body 80 and a metal layer 89. The element body 80 has an element main surface 801, an element rear face 802 and one or more element side faces 803. The metal layer 89 includes a bottom part 891, and one or more side parts 892. The joint material 901 includes a first part 9011, a second part 9012, and one or more third parts 9013.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] The semiconductor device disclosed in this document includes a first lead, a semiconductor element, and a sealing resin. The semiconductor element is bonded to the first lead via a conductive bonding material. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-073509

[0004] [overview] If the bonding strength between the semiconductor element and the first lead is insufficient, this can cause defects.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device that can increase the bonding strength of semiconductor elements.

[0006] A semiconductor device provided by the present disclosure includes an island lead, a semiconductor element mounted on the island lead, a bonding material interposed between the island lead and the semiconductor element, and a sealing resin covering the semiconductor element, the bonding material, and at least a portion of the island lead, wherein the island lead has a main surface facing a first side in a first direction and a first recess recessed from the main surface to a second side in the first direction, the first recess including a bottom surface facing the first side in the first direction and one or more first side surfaces located between the main surface and the bottom surface, and the semiconductor element is partially accommodated in the first recess and The element has a main body and a metal layer, the main body having a main surface facing a first side in the first direction, a back surface facing a second side, and one or more side surfaces facing a direction intersecting the first direction, the metal layer including a bottom covering at least a portion of the back surface, and one or more side surfaces each covering at least a portion of the one or more side surfaces and extending from the main surface to the first side in the first direction, and the bonding material including a first portion interposed between the bottom and the main surface, one or more second portions interposed between the one or more side surfaces and the one or more first side surfaces, and one or more third portions interposed between the one or more side surfaces and the main surface.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a partially exploded perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 3] FIG. 3 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 5] FIG. 5 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 6] FIG. 6 is a front view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 7] FIG. 7 is a rear view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 8] FIG. 8 is a left side view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 9] FIG. 9 is a right side view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 10] FIG. 10 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. [Figure 14] FIG. 14 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 15] FIG. 15 is a partially enlarged cross-sectional view showing a first modification of the semiconductor device according to the first embodiment of the present disclosure. [Figure 16] FIG. 16 is a partially enlarged cross-sectional view showing a second modification of the semiconductor device according to the first embodiment of the present disclosure. [Figure 17] FIG. 17 is a partially enlarged cross-sectional view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 18] FIG. 18 is a partially enlarged cross-sectional view showing a semiconductor device according to the second embodiment of the present disclosure. [Figure 19] FIG. 19 is a partially enlarged cross-sectional view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 20] FIG. 20 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.

[0009] [Detailed explanation] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, the terms "a certain object A is formed on an object B" and "a certain object A is formed on an object B" include "a certain object A is formed directly on an object B" and "a certain object A is formed on an object B with another object interposed between the objects A and B." Similarly, the terms "a certain object A is disposed on an object B" and "a certain object A is disposed on an object B" include "a certain object A is disposed directly on an object B" and "a certain object A is disposed on an object B with another object interposed between the objects A and B," unless otherwise specified. Similarly, the term "a certain object A is located on an object B" includes "a certain object A is located on an object B in contact with the object B" and "a certain object A is located on an object B with another object interposed between the objects A and B," unless otherwise specified. Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in this disclosure, "a surface A faces (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] First Embodiment 1 to 14 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes an island lead 6, a semiconductor element 8, a first conductive bonding material 901, and a sealing resin 9. The semiconductor device A1 may further include a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, and a wire 909. The specific use of the semiconductor device A1 is not limited in any way. The semiconductor device A1 may be used for switching current, for example, by being mounted on a substrate.

[0013] FIG. 1 is a partially exploded perspective view showing the semiconductor device A1. FIG. 2 is a plan view showing the semiconductor device A1. FIG. 3 is a partial plan view showing the semiconductor device A1. FIG. 4 is a partial plan view showing the semiconductor device A1. FIG. 5 is a bottom view showing the semiconductor device A1. FIG. 6 is a front view showing the semiconductor device A1. FIG. 7 is a rear view showing the semiconductor device A1. FIG. 8 is a left side view showing the semiconductor device A1. FIG. 9 is a right side view showing the semiconductor device A1. FIG. 10 is a cross-sectional view taken along line XX in FIG. 2. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 2. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 2. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 2. FIG. 14 is a partially enlarged cross-sectional view showing the semiconductor device A1. For ease of understanding, the sealing resin 9 is omitted from FIG. 1.

[0014] In these figures, the thickness direction of the island lead 6 is defined as the first direction z. One side of the first direction z is referred to as the first side z1, and the other side is referred to as the second side z2. Furthermore, a direction perpendicular to the first direction z is defined as the second direction x. One side of the second direction x is referred to as the first side x1, and the other side is referred to as the second side x2. Furthermore, a direction perpendicular to the first direction z and the second direction x is defined as the third direction y. One side of the third direction y is referred to as the first side y1, and the other side is referred to as the second side y2.

[0015] The first lead 1, the second lead 2, the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6 may appropriately fulfill functions such as supporting the semiconductor element 8 and forming a conductive path that is electrically connected to the semiconductor element 8. The first lead 1, the second lead 2, the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6 may contain a metal such as Cu (copper), Ni (nickel), or Fe (iron) or an alloy thereof. The first lead 1, the second lead 2, the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6 may be formed, for example, by subjecting a metal plate material to a process selected from punching, bending, etching, and the like. Furthermore, a plating layer containing Ag (silver), Ni (nickel), Au (gold), or the like may be provided at appropriate locations on each of the multiple leads 1 to 6, as necessary.

[0016] As will be described later, in this embodiment, the fourth lead 4 and the island lead 6 are configured to be connected to each other. However, depending on the conduction state of the first lead 1, the second lead 2, the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6, they may be configured as separate pieces, or any of the leads may be connected to each other.

[0017] As shown in FIGS. 1 to 5 and 10 to 14 , the island lead 6 may have a main surface 601, a back surface 602, a first recess 610, a thick portion 61, a thin portion 62, and a plurality of extending portions 63. The main surface 601 faces a first side z1 in the first direction z and may be a flat surface perpendicular to the first direction z in the illustrated example. The island lead 6 may have, for example, a recess or a groove recessed from the main surface 601 as appropriate. The back surface 602 faces a second side z2 in the first direction z and may face the opposite side to the main surface 601. In the illustrated example, the back surface 602 may be a flat surface perpendicular to the first direction z. A plating layer containing Ni (nickel), Ti (titanium), or the like may be provided on the back surface 602 as appropriate.

[0018] The thick portion 61 is a portion where the main surface 601 and the back surface 602 overlap as viewed in the first direction z, and in the illustrated example, may be a rectangular portion as viewed in the first direction z. The shape of the thick portion 61 is not limited in any way. The thickness of the thick portion 61 in the first direction z is the distance between the main surface 601 and the back surface 602. The thin portion 62 is a portion that overlaps the main surface 601 as viewed in the first direction z but does not overlap the back surface 602, and in the illustrated example, may be connected to the thick portion 61 so as to extend to both sides in the second direction x and both sides in the third direction y as viewed in the first direction z. The thickness of the thin portion 62 in the first direction z is smaller than the distance between the main surface 601 and the back surface 602. The thickness of the thick portion 61 and the thin portion 62 are not limited in any way. For example, the thickness of the thick portion 61 may be 0.2 mm or more and 0.5 mm or less, and the thickness of the thin portion 62 may be 0.1 mm or more and 0.4 mm or less. In the illustrated example, the portion of the thin portion 62 extending from the thick portion 61 to the first side y1 in the third direction y may be larger than the portion extending to the second side y2.

[0019] The multiple extension portions 63 may be portions extending from the end of the thin-walled portion 62. In the illustrated example, the multiple extension portions 63 may extend from the thin-walled portion 62 to both sides in the second direction x. The number of extension portions 63 is not limited and may be multiple or may be one. In the illustrated example, two extension portions 63 may be provided on the first side x1 in the second direction x and two extension portions 63 may be provided on the second side x2. The extension portions 63 may have end faces 631. The end faces 631 may be surfaces facing the opposite side to the thin-walled portion 62 in the second direction x; in other words, they may be surfaces facing outward in the second direction x. The illustrated end faces 631 may be surfaces perpendicular to the second direction x. The positions in the second direction x of the two end faces 631 located on the first side x1 in the second direction x may be the same. Furthermore, the positions in the second direction x of the two end faces 631 located on the second side x2 in the second direction x may be the same.

[0020] The first recess 610 may be recessed from the main surface 601 toward the second side z2 in the first direction z. At least a portion of the first recess 610 may overlap with the thick portion 61 when viewed in the first direction z, or the entirety of the first recess 610 may overlap with the thick portion 61 when viewed in the first direction z. The first recess 610 may include a bottom surface 611 and a plurality of first side surfaces 612.

[0021] The bottom surface 611 may be a surface facing the first side z1 in the first direction z, and may be a flat surface, a surface having an uneven shape, or the like. The shape of the bottom surface 611 as viewed in the first direction z is not limited in any way, and may be a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, or the like. In the illustrated example, the bottom surface 611 may be rectangular.

[0022] The plurality of first side surfaces 612 are interposed between the bottom surface 611 and the main surface 601. The number of the plurality of first side surfaces 612 is not limited in any way, and may be four in the illustrated example. The first side surfaces 612 may be surfaces along the first direction z.

[0023] 1, 2, and 10 to 12, the first lead 1 is arranged on a first side z1 in a first direction z relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. The first lead 1 of this embodiment may have a main portion 11, a plurality of comb portions 12, a connecting portion 15, and a joining portion 16.

[0024] The main portion 11 may be a plate-like portion along the xy plane, and in the illustrated example, may be substantially rectangular with the second direction x as the longitudinal direction. The main portion 11 may have a surface 111. The surface 111 may be a surface facing the first side z1 in the first direction z. In the illustrated example, the surface 111 may be a flat surface.

[0025] The plurality of comb portions 12 may extend from the main portion 11 to the second side y2 in the third direction y. The number of comb portions 12 is not limited, and in the illustrated example, three comb portions 12 may be provided. The plurality of comb portions 12 may be aligned in the second direction x.

[0026] The comb portion 12 may be a portion located on the second side y2 in the third direction y with respect to the main portion 11. The shape of the comb portion 12 is not limited in any way, and in the illustrated example, the comb portion 12 may have a shape whose longitudinal direction is the third direction y when viewed along the first direction z. The comb portion 12 may be perpendicular to the first direction z.

[0027] In the illustrated example, the three comb portions 12 may include a comb portion 12 whose length in the third direction y is different from that of the other comb portions 12. The comb portion 12 located in the center in the second direction x may have a longer length in the third direction y than the other comb portions 12. The comb portions 12 located on both sides in the second direction x may be arranged in positions close to a gate electrode 83 described below. Furthermore, the comb portion 12 located on the second side x2 in the second direction x may be arranged in positions close to a gate electrode 83 and a wire 909 described below. However, the multiple comb portions 12 may have the same length.

[0028] The comb portion 12 may have a surface 121. The surface 121 may be a surface facing the first side z1 in the first direction z. In the illustrated example, the surface 121 may be a flat surface.

[0029] In the illustrated example, the comb portion 12 may have a tip surface 122. The tip surface 122 may be a surface of the comb portion 12 located on the second side y2 in the third direction y. The tip surface 122 may be inclined so that it is located on the first side z1 in the first direction z as it approaches the second side y2 in the third direction y.

[0030] The connecting portion 15 may be connected to an end of the main portion 11 on a first side y1 in the third direction y, which is opposite the comb portion 12. The connecting portion 15 may extend from the main portion 11 to a second side z2 in the first direction z. The connecting portion 15 may be inclined with respect to the first direction z. The shape of the connecting portion 15 is not limited in any way, and in the illustrated example, it may be rectangular with the second direction x as the longitudinal direction. In the illustrated example, the center of the connecting portion 15 in the second direction x may be the same as the center of the main portion 11 in the second direction x.

[0031] The bonding portion 16 may be connected to an end portion of the connecting portion 15 on the first side y1 in the third direction y. The bonding portion 16 may extend along the second direction x and the third direction y. When viewed in the first direction z, the bonding portion 16 may have a rectangular shape with the second direction x as its longitudinal direction. In the illustrated example, the center of the bonding portion 16 in the second direction x may be the same as the center of the connecting portion 15 in the second direction x. The bonding portion 16 may be conductively bonded to the third lead 3 via a fourth conductive bonding material 904. The fourth conductive bonding material 904 may be, for example, solder, an Ag paste material, an Ag sintered material, a Cu sintered material, or the like.

[0032] 1, 2, 10, 11, and 13, the second lead 2 may be located on a first side z1 in the first direction z relative to the third lead 3, the fourth lead 4, the fifth lead 5, and the island lead 6. The second lead 2 may be located on a second side y2 in the third direction y relative to the first lead 1. The second lead 2 of this embodiment may have a main portion 21, multiple comb portions 22, a connecting portion 25, and a joint portion 26.

[0033] The main portion 21 may be a plate-like portion along the xy plane, and in the illustrated example, may be a substantially rectangular portion with the second direction x as the longitudinal direction. The main portion 11 and the main portion 21 may be located on opposite sides of the semiconductor element 8 in the third direction y. The main portion 21 may have a surface 211. The surface 211 may be a surface facing the first side z1 in the first direction z. In the illustrated example, the surface 211 may be a flat surface.

[0034] The plurality of comb portions 22 may extend from the main portion 21 to the first side y1 in the third direction y. The number of comb portions 22 is not limited, and in the illustrated example, two comb portions 22 may be provided. The plurality of comb portions 22 may be positioned side by side in the second direction x.

[0035] The comb portion 22 may be a portion located on the first side y1 in the third direction y with respect to the main portion 21. The shape of the comb portion 22 is not limited in any way, and in the illustrated example, the comb portion 22 may have a shape whose longitudinal direction is the third direction y when viewed along the first direction z. The comb portion 22 may be perpendicular to the first direction z.

[0036] In the illustrated example, the lengths in the third direction y of the two comb portions 22 may be equal. However, the lengths in the third direction y of the multiple comb portions 22 may be different from each other.

[0037] The comb portion 22 may have a surface 221. The surface 221 may be a surface facing the first side z1 in the first direction z. In the illustrated example, the surface 221 may be a flat surface.

[0038] In the illustrated example, the comb portion 22 may have a tip surface 222. The tip surface 222 may be a surface of the comb portion 22 that is located on a first side y1 in the third direction y. The tip surface 222 may be inclined so that it is located on the first side z1 in the first direction z as it approaches the first side y1 in the third direction y.

[0039] The connecting portion 25 may be connected to an end portion of the main portion 21 on the second side y2 in the third direction y, which is opposite the comb portion 22. The connecting portion 25 may extend from the main portion 21 to the second side z2 in the first direction z. The connecting portion 25 may be inclined with respect to the first direction z. The shape of the connecting portion 25 is not limited in any way, and in the illustrated example, it may be rectangular with the second direction x as its longitudinal direction. In the illustrated example, the center of the connecting portion 25 in the second direction x may be located on the first side x1 in the second direction x with respect to the center of the main portion 21 in the second direction x.

[0040] The joint portion 26 may be connected to an end portion of the connecting portion 25 on the second side y2 in the third direction y. The joint portion 26 may extend along the second direction x and the third direction y. When viewed in the first direction z, the joint portion 26 may have a rectangular shape with the second direction x as its longitudinal direction. In the illustrated example, the center of the joint portion 26 in the second direction x may be the same as the center of the connecting portion 25 in the second direction x. The joint portion 26 may be conductively joined to the fourth lead 4 via a fifth conductive bonding material 905. The fifth conductive bonding material 905 may be, for example, solder, an Ag paste material, an Ag sintered material, a Cu sintered material, or the like.

[0041] 1 to 5, 10, 11, and 12, the third lead 3 may be arranged spaced apart from the island lead 6 on a first side y1 in the third direction y. The center of the third lead 3 in the second direction x may be at approximately the same position in the second direction x as the center of the island lead 6 in the second direction x. The third lead 3 may have a main surface 301, a back surface 302, a thick portion 31, a thin portion 32, multiple extensions 33, and multiple end surfaces 341.

[0042] The main surface 301 may be a surface facing a first side z1 in the first direction z, and in the illustrated example, may be a flat surface perpendicular to the first direction z. The third lead 3 may have, for example, a recess or groove recessed from the main surface 301 as appropriate. The bonding portion 16 may be bonded to the main surface 301 via a fourth conductive bonding material 904. The back surface 302 may be a surface facing a second side z2 in the first direction z, and may face the opposite side from the main surface 301. In the illustrated example, the back surface 302 may be a flat surface perpendicular to the first direction z. A plating layer containing Ni (nickel), Ti (titanium), or the like may be appropriately provided on the back surface 302. In this embodiment, the main surface 301 may be located at approximately the same position as the main surface 601 in the first direction z, and the back surface 302 may be located at approximately the same position as the back surface 602.

[0043] The thick portion 31 may be a portion where the main surface 301 and the back surface 302 overlap as viewed in the first direction z. In the illustrated example, the thick portion 31 may be a rectangular portion with the second direction x as the longitudinal direction as viewed in the first direction z. The shape of the thick portion 31 is not limited in any way. The thickness of the thick portion 31 in the first direction z may be the distance between the main surface 301 and the back surface 302. The thin portion 32 is a portion that overlaps with the main surface 301 as viewed in the first direction z but does not overlap with the back surface 302. In the illustrated example, the thin portion 32 may be connected to the thick portion 31 as viewed in the first direction z so as to extend to both sides in the second direction x and to the second side y2 in the third direction y. The thin portion 32 may have a portion that is connected to the thick portion 31 so as to extend toward the first side y1 in the third direction y when viewed in the first direction z, and this portion may be sandwiched between the extending portions 33 in the second direction x. The thickness of the thin portion 32 in the first direction z is smaller than the distance between the main surface 301 and the back surface 302. The thicknesses of the thick portion 31 and the thin portion 32 are not limited in any way. In this embodiment, the thickness of the thick portion 31 may be approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 32 may be approximately the same as the thickness of the thin portion 62.

[0044] The multiple extending portions 33 may be portions extending from the end of the thick portion 31. In the illustrated example, the multiple extending portions 33 may extend from the thick portion 31 toward the first side y1 in the third direction y. The number of extending portions 33 is not limited and may be multiple or may be one. In the illustrated example, four extending portions 33 may be provided. The extending portion 33 may have an end surface 331. The end surface 331 may be a surface facing the opposite side to the thick portion 31 in the third direction y, in other words, a surface facing the first side y1, which is the outside, in the third direction y. The illustrated end surface 331 may be a surface perpendicular to the third direction y. The multiple end surfaces 331 may be located at the same position in the third direction y.

[0045] The multiple extension portions 34 may be portions extending from the end of the thin-walled portion 32. In the illustrated example, the multiple extension portions 34 may extend from the thin-walled portion 32 in the first direction. The number of extension portions 34 is not limited in any way and may be multiple or may be one. In the illustrated example, two extension portions 34 may be provided. The extension portion 34 may have an end surface 341. The end surface 341 may be a surface facing the second direction x. The illustrated end surface 341 may be a surface perpendicular to the second direction x. The two end surfaces 341 may face opposite each other in the second direction x.

[0046] As shown in FIGS. 1 to 6, 8, 10, and 11, the fourth lead 4 may be located on the second side y2 in the third direction y with respect to the island lead 6. The center of the fourth lead 4 in the second direction x may be located closer to the first side x1 in the second direction x than the center of the island lead 6 in the second direction x. In the semiconductor device A1, the fourth lead 4 and the island lead 6 may be connected by a relay portion 49. In the illustrated example, two relay portions 49 may be provided spaced apart from each other in the second direction x. The number of relay portions 49 is not limited in any way. Alternatively, the fourth lead 4 may be separated from the island lead 6. The fourth lead 4 may have a main surface 401, a back surface 402, a thick portion 41, a thin portion 42, and multiple extending portions 43 and 44.

[0047] The main surface 401 may be a surface facing a first side z1 in the first direction z, and in the illustrated example, may be a flat surface perpendicular to the first direction z. The fourth lead 4 may have, for example, a recess or a groove recessed from the main surface 401 as appropriate. The bonding portion 26 may be bonded to the main surface 401 via a fifth conductive bonding material 905. The back surface 402 may be a surface facing a second side z2 in the first direction z, and may face the opposite side from the main surface 401. In the illustrated example, the back surface 402 may be a flat surface perpendicular to the first direction z. A plating layer containing Ni (nickel), Ti (titanium), or the like may be appropriately provided on the back surface 402. In this embodiment, the main surface 401 may be located at approximately the same position as the main surface 601 in the first direction z, and the back surface 402 may be located at approximately the same position as the back surface 602.

[0048] The thick portion 41 may be a portion where the main surface 401 and the back surface 402 overlap as viewed in the first direction z. In the illustrated example, the thick portion 41 may be a rectangular portion with the second direction x as the longitudinal direction as viewed in the first direction z. The shape of the thick portion 41 is not limited in any way. The thickness of the thick portion 41 in the first direction z is the distance between the main surface 401 and the back surface 402. In this embodiment, the dimension of the thick portion 41 in the second direction x is smaller than the dimension of the thick portion 31 in the second direction x. The thin portion 42 may be a portion that overlaps with the main surface 401 as viewed in the first direction z but does not overlap with the back surface 402. In the illustrated example, the thin portion 42 may be connected to the thick portion 41 as viewed in the first direction z so as to extend to both sides in the second direction x and to a first side y1 in the third direction y. The thin portion 42 may have a portion that is connected to the thick portion 41 so as to extend toward the second side y2 in the third direction y when viewed in the first direction z, and this portion may be sandwiched between the extending portions 43 in the second direction x. The thickness of the thin portion 42 in the first direction z is smaller than the distance between the main surface 401 and the back surface 402. The thicknesses of the thick portion 41 and the thin portion 42 are not limited in any way. In this embodiment, the thickness of the thick portion 41 may be approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 42 may be approximately the same as the thickness of the thin portion 62.

[0049] The multiple extending portions 43 may be portions extending from the end of the thick portion 41. In the illustrated example, the multiple extending portions 43 may extend from the thick portion 41 toward the second side y2 in the third direction y. The number of extending portions 43 is not limited and may be multiple or may be one. In the illustrated example, three extending portions 43 may be provided. The positions of these three extending portions 43 in the second direction x may be approximately the same as the positions in the second direction x of the three extending portions 33 among the multiple extending portions 33 that are located on the first side x1 in the second direction x. The extending portion 43 may have an end surface 431. The end surface 431 may be a surface facing the opposite side to the thick portion 41 in the third direction y. In other words, it may be a surface facing the second side y2, which is the outside, in the third direction y. The illustrated end surface 431 may be a surface perpendicular to the third direction y. The positions of the multiple end faces 431 in the third direction y may be the same.

[0050] The extension portion 44 may be a portion extending from the end of the thin-walled portion 42. In the illustrated example, the extension portion 44 may extend from the thin-walled portion 42 toward the first side x1 in the second direction x. The number of extension portions 44 is not limited in any way and may be multiple or may be one. In the illustrated example, one extension portion 44 may be provided. The extension portion 44 may have an end surface 441. The end surface 441 may be a surface facing the first side x1 in the second direction x. The illustrated end surface 441 may be a surface perpendicular to the second direction x.

[0051] In this embodiment, the island lead 6 can be electrically connected to the source electrode 82 of the semiconductor element 8 via the second lead 2 and the fourth lead 4.

[0052] 1 to 5 and 12, the fifth lead 5 may be located on the second side y2 in the third direction y with respect to the island lead 6. The center of the fifth lead 5 in the second direction x may be located on the second side x2 in the second direction x with respect to the center of the island lead 6 in the second direction x. The fifth lead 5 may be located on the second side x2 in the second direction x with respect to the fourth lead 4. The fifth lead 5 may have a main surface 501, a back surface 502, a thick portion 51, a thin portion 52, an extending portion 53, and an extending portion 54.

[0053] The main surface 501 may be a surface facing a first side z1 in the first direction z, and in the illustrated example, may be a flat surface perpendicular to the first direction z. The fifth lead 5 may have, for example, a recess or a groove recessed from the main surface 501 as appropriate. A wire 909 may be bonded to the main surface 501. The back surface 502 may be a surface facing a second side z2 in the first direction z, and may face the opposite side from the main surface 501. In the illustrated example, the back surface 502 may be a flat surface perpendicular to the first direction z. A plating layer containing Ni (nickel), Ti (titanium), or the like may be appropriately provided on the back surface 502. In this embodiment, the main surface 501 may be located at approximately the same position as the main surface 601 in the first direction z, and the back surface 502 may be located at approximately the same position as the back surface 602.

[0054] The thick portion 51 may be a portion where the main surface 501 and the back surface 502 overlap as viewed in the first direction z. In the illustrated example, the thick portion 51 may be a rectangular portion as viewed in the first direction z. The shape of the thick portion 51 is not limited in any way. The thickness of the thick portion 51 in the first direction z is the distance between the main surface 501 and the back surface 502. In this embodiment, the dimension of the thick portion 51 in the second direction x may be smaller than the dimensions of the thick portions 31 and 41 in the second direction x. The thin portion 32 may be a portion that overlaps with the main surface 301 as viewed in the first direction z but does not overlap with the back surface 302. In the illustrated example, the thin portion 32 may be connected to the thick portion 51 as viewed in the first direction z so as to extend to both sides in the second direction x and to a first side y1 in the third direction y. The thickness of the thin portion 52 in the first direction z is smaller than the distance between the main surface 501 and the back surface 502. The thickness of the thick portion 51 and the thickness of the thin portion 52 are not limited in any way. In this embodiment, the thickness of the thick portion 51 may be approximately the same as the thickness of the thick portion 61, and the thickness of the thin portion 52 may be approximately the same as the thickness of the thin portion 62.

[0055] The extending portion 53 may be a portion extending from an end of the thick portion 51. In the illustrated example, the extending portion 53 may extend from the thick portion 51 toward the second side y2 in the third direction y. The number of extending portions 53 is not limited and may be multiple or may be one. In the illustrated example, one extending portion 53 may be provided. The position of the extending portion 53 in the second direction x may be approximately the same as the position in the second direction x of the extending portion 33 among the multiple extending portions 33 that is located furthest toward the second side x2 in the second direction x. The extending portion 53 may have an end surface 531. The end surface 531 may be a surface facing the opposite side to the thick portion 51 in the third direction y. In other words, it may be a surface facing the second side y2, which is the outer side in the third direction y. The illustrated end surface 531 may be a surface perpendicular to the third direction y. Furthermore, the position of the end surface 531 in the third direction y may be the same as that of the multiple end surfaces 431.

[0056] The extension portion 54 may be a portion extending from an end of the thin portion 52. In the illustrated example, the extension portion 54 may extend from the thin portion 52 toward the second side x2 in the second direction x. The number of extension portions 54 is not limited and may be multiple or may be one. In the illustrated example, one extension portion 54 may be provided. The position of the extension portion 54 in the third direction y may be substantially the same as the position of the extension portion 44 in the third direction y. The extension portion 54 may have an end surface 541. The end surface 541 may be a surface facing the opposite side from the thick portion 51 in the second direction x. In other words, it may be a surface facing the second side x2, which is the outside in the second direction x. The illustrated end surface 541 may be a surface perpendicular to the second direction x. The position of the end surface 541 in the third direction y may be the same as the end surface 341 and the multiple end surfaces 631.

[0057] The semiconductor element 8 may be an element that exhibits the electrical functions of the semiconductor device A1. The specific configuration of the semiconductor element 8 is not limited in any way. In this embodiment, the semiconductor element 8 may be a transistor using a nitride semiconductor, more specifically, a GaN-HEMT (High Electron Mobility Transistor) element using gallium nitride (GaN). The semiconductor element 8 is not limited to one using a nitride semiconductor, and may use other semiconductors such as silicon (Si) and silicon carbide (SiC). Furthermore, the semiconductor element 8 is not limited to a HEMT, and may be other transistors such as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and an IGBT (Insulated Gate Bipolar Transistor). In the following description, the semiconductor element 8 will be described as a GaN-HEMT. The semiconductor element 8 may be mounted on the main surface 601 of the island lead 6. As shown in FIGS. 1 to 3 and 10 to 14, the semiconductor element 8 can have an element body 80, a plurality of drain electrodes 81, a plurality of source electrodes 82, and a gate electrode 83.

[0058] The element body 80 may have an element primary surface 801 and an element rear surface 802. The element primary surface 801 may be a surface facing a first side z1 in the first direction z and may be a flat surface or an uneven surface. The element rear surface 802 may be a surface facing a second side z2 in the first direction z and may face the opposite side to the element primary surface 801.

[0059] The following describes a specific configuration example of the element body 80. In the example shown in Fig. 14, the element body 80 may have a support layer 71, a second buffer layer 721, a first buffer layer 722, a first functional layer 73, a second functional layer 74, a third functional layer 75, a metal layer 761, a passivation layer 771, and an insulating layer 78. The first functional layer 73, the second functional layer 74, and the third functional layer 75 correspond to the multiple functional layers of the present disclosure.

[0060] The support layer 71 may be, for example, a low-resistance Si (silicon) substrate. The low-resistance Si (silicon) substrate may be, for example, a p-type substrate having an electrical resistivity of 0.001 Ωmm or more and 0.5 Ωmm or less. In addition to a low-resistance Si (silicon) substrate, the support layer 71 may be a low-resistance SiC substrate, a low-resistance GaN substrate, or the like. The thickness of the support layer 71 may be, for example, 200 μm or more and 1500 μm or less.

[0061] The first buffer layer 722 may include, for example, a multi-layer buffer layer formed by stacking multiple nitride semiconductor films. The second buffer layer 721 may be interposed between the support layer 71 and the first buffer layer 722. The second buffer layer 721 may include, for example, an AlN film. The first buffer layer 722 may include, for example, a graded AlGaN layer. The thickness of the second buffer layer 721 may be, for example, 100 nm to 500 nm. The thickness of the first buffer layer 722 may be 300 nm to 1 μm in total for three AlGaN layers with the same thickness, having Al compositions of 75%, 50%, and 25%, respectively, starting from the second buffer layer 721. The number of graded AlGaN layers constituting the first buffer layer 722 and their respective thickness ratios may vary. The first buffer layer 722 may be composed of, for example, a single AlGaN film, an AlGaN / GaN superlattice film, an AlN / AlGaN superlattice film, or a film having an AlN / GaN superlattice structure. In order to suppress leakage current through the first buffer layer 722, an impurity may be introduced into a portion of the first buffer layer 722 to make the portion semi-insulating. In this case, the impurity may be C or Fe, and the impurity concentration may be, for example, 4×10 16 cm -2 It is desirable that this is the case.

[0062] The first functional layer 73 may constitute, for example, an electron transit layer. In this embodiment, the first functional layer 73 may include a GaN layer, and its thickness may be 0.5 μm or more and 2 μm or less. In order to suppress leakage current flowing through the first functional layer 73, impurities may be introduced into the region other than the surface region to make the layer semi-insulating. In this case, the impurity concentration is 4×10 16 cm -3 The impurity may be, for example, C.

[0063] The second functional layer 74 may constitute an electron supply layer. The second functional layer 74 may be composed of a nitride semiconductor having a larger bandgap than the first functional layer 73. Specifically, the second functional layer 74 may include a nitride semiconductor having a higher Al composition than the first functional layer 73. In a nitride semiconductor, the larger the Al composition, the larger the bandgap. In the present embodiment, the second functional layer 74 is Al x Ga 1-x N layer (0.1 < x ≤ 0.3) may be included. The Al composition of the second functional layer 74 is preferably 20% or more and 30% or less. That is, x is preferably 0.2 or more and 0.3 or less. The thickness of the second functional layer 74 is not limited at all and may be 8 nm or more and 20 nm or less.

[0064] As described above, the first functional layer 73 and the third functional layer 75 may include nitride semiconductors having different bandgaps (Al compositions), and lattice mismatch may occur between them. Due to the spontaneous polarization of the first functional layer 73 and the second functional layer 74 and the piezoelectric polarization caused by the lattice mismatch between them, the energy level of the conduction band of the first functional layer 73 at the interface between the first functional layer 73 and the second functional layer 74 may be lower than the Fermi level. As a result, in the first functional layer 73, a two-dimensional electron gas may spread at a position close to the interface between the first functional layer 73 and the second functional layer 74 (for example, at a distance of about several Å from the interface).

[0065] The third functional layer 75 may include a nitride semiconductor doped with an acceptor-type impurity. More specifically, the third functional layer 75 may include an Al y Ga 1-y N (0 ≤ y < 1, y < x) layer doped with an acceptor-type impurity. In the present embodiment, the third functional layer 75 may include a GaN layer (p-type GaN layer) doped with an acceptor-type impurity. In the present embodiment, the acceptor-type impurity may be Mg (magnesium). The acceptor-type impurity may be an acceptor-type impurity other than Mg such as Zn (zinc).

[0066] The third functional layer 75 may have a ridge portion. The thickness of the ridge portion may be 100 nm or more. By providing the ridge portion, the maximum rated gate voltage in the positive direction can be increased. The ridge portion may be provided to change the conduction band at the interface formed by the first functional layer 73 and the third functional layer 75, thereby preventing the generation of two-dimensional electron gas in the region directly below the ridge portion when no gate voltage is applied.

[0067] The metal layer 761 may be in Schottky contact with the upper surface of the ridge portion. The metal layer 761 may include, for example, TiN. The thickness of the metal layer 761 may be, for example, 60 nm or more and 200 nm or less. The metal layer 761 may be composed of a single film of any one of a Ti film, a TiN film, and a TiW film, or a composite film composed of any combination of two or more of these films.

[0068] The device body 80 may include a second metal layer X1, a third metal layer X2, and a first metal layer X3. The second metal layer X1 may be a first gate electrode. The third metal layer X2 may be a second gate electrode. The first metal layer X3 may form a drain contact.

[0069] The passivation layer 771 may cover at least a portion of each of the second functional layer 74, the third functional layer 75, and the metal layer 761. The thickness of the passivation layer 771 may be, for example, 50 nm or more and 200 nm or less. In this embodiment, the passivation layer 771 may include a SiN film. The passivation layer 771 may be a single film of any one of a SiN film, a SiO2 film, a SiON film, an Al2O3 film, an AlN film, and an AlON film, or a composite film made of any combination of two or more of these films.

[0070] The insulating layer 78 may cover at least a portion of each of the first functional layer 73, the second functional layer 74, and the third functional layer 75. There is no limitation on the specific configuration of the insulating layer 78. The insulating layer 78 may include a first insulating layer 781 and a second insulating layer 782.

[0071] The first insulating layer 781 may cover the passivation layer 771, and may further cover the second metal layer X1 and the third metal layer X2. The first insulating layer 781 may include an insulating material, such as SiO2.

[0072] The second insulating layer 782 may cover the first insulating layer 781 and may further cover the first metal layer X3. The second insulating layer 782 may cover end surfaces of the first insulating layer 781 in the second direction x and the third direction y. The second insulating layer 782 may include an insulating material, such as SiN or SiO2.

[0073] 11 to 14, the element body 80 may have an element principal surface 801, an element rear surface 802, and one or more element side surfaces 803. The element principal surface 801 may be a surface facing a first side z1 in the first direction z, and may be a flat surface or a surface having a finely textured shape. The element rear surface 802 may be a surface facing a second side z2 in the first direction z, and may be a flat surface or a surface having a finely textured shape.

[0074] The one or more element side surfaces 803 may be surfaces facing a direction intersecting with the first direction z. The number of the one or more element side surfaces 803 is not limited in any way, and in the illustrated example, there may be four.

[0075] 14 shows an enlarged view of a portion of the second side x2 in the second direction x of the semiconductor element 8. In this example, the portions of the semiconductor element 8 on the first side x1 in the second direction x and the first side y1 and second side y2 in the third direction y may have a structure similar to that shown in FIG.

[0076] 14 , the element main surface 801 may be formed by the insulating layer 78, and may also be formed by the second insulating layer 782. The element back surface 802 may be formed by the support layer 71. In the illustrated example, the element side surface 803 may be formed by the insulating layer 78 and the support layer 71, and may also be formed by the second insulating layer 782 and the support layer 71. The element side surface 803 may further be formed to include end surfaces of the second buffer layer 721, the first buffer layer 722, and the first functional layer 73. The element side surface 803 may be a flat surface, or may be a surface having an uneven shape.

[0077] The semiconductor element 8 may have a metal layer 89. The metal layer 89 may contain a metal such as Ti (titanium), Ni (nickel), Ag (silver), or an alloy thereof. The metal layer 89 may have a configuration in which Ti (titanium), Ni (nickel), and Ag (silver) are stacked in this order from the element body 80 side, for example.

[0078] The metal layer 89 may include a bottom 891 and one or more side portions 892. The bottom portion 891 may cover at least a portion of the element back surface 802, or may cover the entire element back surface 802. The one or more side portions 892 may cover at least a portion of any of the multiple element side surfaces 803. The metal layer 89 may have a number of side portions 892 equal to the number of the multiple element side surfaces 803. In the illustrated example, the metal layer 89 may include four side portions 892. The side portions 892 may extend from the first recess 610 to the first side z1 in the first direction z. In the illustrated example, the side portions 892 cover at least a portion of the portion of the element side surface 803 that is formed by the support layer 71, and may not cover the portions that are formed by the second buffer layer 721, the first buffer layer 722, the first functional layer 73, and the second insulating layer 782. The side portion 892 may be spaced from the second buffer layer 721 on the second side z2 in the first direction z. The side portion 892 may be spaced from the first functional layer 73 on the second side z2 in the first direction z.

[0079] The semiconductor element 8 may be bonded to the island lead 6 by a first conductive bonding material 901. A portion of the semiconductor element 8 in the first direction z is accommodated in a first recess 610. The semiconductor element 8 protrudes from the main surface 601 to a first side z1 in the first direction z. A side portion 892 protrudes from the main surface 601 to the first side z1 in the first direction z. The depth of the first recess 610 in the first direction z is not limited in any way and may be, for example, 1 μm or more and 10,000 μm or less. The size of the semiconductor element 8 in the first direction z is not limited in any way and may be, for example, 1 μm or more and 1,000 μm or less.

[0080] The specific configuration of the first conductive bonding material 901 is not limited in any way, and may be, for example, solder, Ag (silver) paste, Ag (silver) sintered material, Cu (copper) sintered material, etc. The first conductive bonding material 901 is an example of the bonding material of the present disclosure.

[0081] The first conductive bonding material 901 may include a first portion 9011, a second portion 9012, and a third portion 9013. The first portion 9011 may be interposed between the bottom portion 891 and the main surface 601. The second portion 9012 may be interposed between the side portion 892 and the first side surface 612. The third portion 9013 may be interposed between the side portion 892 and the main surface 601. In FIG. 14 , the third portion 9013 may have a so-called fillet shape that extends from the side portion 892 to a second side z2 in the first direction z.

[0082] The size Za of the first portion 9011 in the first direction z may be smaller than the size Zb of the third portion 9013 in the first direction z. The size Za is not limited in any way and may be, for example, 0 μm or more and 1000 μm or less. The size Zb is not limited in any way and may be, for example, 0 μm or more and 1000 μm or less. The ratio of size Za:size Zb may be, for example, 1:1 to 1:10000. The size Xa of the second conductive bonding material 9021 in the second direction x may be, for example, 0 μm or more and 1000 μm or less. The size Xa may be larger than the size Za.

[0083] The plurality of drain electrodes 81, the plurality of source electrodes 82, and the gate electrode 83 may be disposed on the element principal surface 801 and may be exposed from the element principal surface 801. The number of the plurality of drain electrodes 81 and the plurality of source electrodes 82 is not limited in any way. In the illustrated example, three drain electrodes 81 and two source electrodes 82 may be provided. The number of the plurality of drain electrodes 81 may be the same as the number of the plurality of comb portions 12, and the number of the plurality of source electrodes 82 may be the same as the number of the plurality of comb portions 22. The plurality of drain electrodes 81 and the plurality of source electrodes 82 may be arranged alternately in the second direction x. The shapes of the drain electrodes 81 and the source electrodes 82 are not limited in any way. In the illustrated example, they may have a shape whose longitudinal direction is the third direction y, more specifically, a rectangular shape.

[0084] The plurality of comb portions 12 of the first lead 1 may be individually conductively joined to the plurality of drain electrodes 81 via a second conductive bonding material 902. The second conductive bonding material 902 may be, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc. The plurality of comb portions 22 of the second lead 2 may be individually conductively joined to the plurality of source electrodes 82 via a third conductive bonding material 903. The third conductive bonding material 903 may be, for example, solder, Ag paste material, Ag sintered material, Cu sintered material, etc.

[0085] The number of gate electrodes 83 is not limited and may be one or more. In the illustrated example, two gate electrodes 83 may be provided. The two gate electrodes 83 may be positioned apart in the second direction x. A wire 909 may be joined to the gate electrode 83 arranged on the second side x2 in the second direction x, and electrical continuity may be established with the fifth lead 5 via the wire 909. Instead of the wire 909, a conductive member made of a metal plate material may be used to establish electrical continuity between the gate electrode 83 and the fifth lead 5. In the illustrated example, the gate electrode 83 on the first side x1 in the second direction x may not be electrically used.

[0086] The sealing resin 9 covers a portion of each of the leads 1 to 6, the first conductive bonding material 901, the semiconductor element 8, and the wires 909, and may be made of an insulating material such as epoxy resin. As shown in Figures 2 to 14, the sealing resin 9 may have a first resin surface 91, a second resin surface 92, a third resin surface 93, a fourth resin surface 94, a fifth resin surface 95, and a sixth resin surface 96, and may be shaped like a rectangular parallelepiped.

[0087] The resin first surface 91 may be a surface facing the first side z1 in the first direction z. In the illustrated example, the resin first surface 91 may be a plane perpendicular to the first direction z. The resin second surface 92 may be a surface facing the second side z2 in the first direction z. In the illustrated example, the resin second surface 92 may be a plane perpendicular to the first direction z. The resin third surface 93 may be a surface facing the first side y1 in the third direction y. In the illustrated example, the resin third surface 93 may be a plane perpendicular to the third direction y. The resin fourth surface 94 may be a surface facing the second side y2 in the third direction y. In the illustrated example, the resin fourth surface 94 may be a plane perpendicular to the third direction y. The resin fifth surface 95 may be a surface facing the first side x1 in the second direction x. In the illustrated example, the resin fifth surface 95 may be a plane perpendicular to the second direction x. The resin sixth surface 96 may be a surface facing the second side x2 in the second direction x. In the illustrated example, the resin sixth surface 96 may be a plane perpendicular to the second direction x.

[0088] From the resin second surface 92, a back surface 602 of the island lead 6, a back surface 302 of the third lead 3, a back surface 402 of the fourth lead 4, and a back surface 502 of the fifth lead 5 may be exposed to the second side z2 in the first direction z. The resin second surface 92, the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 may be flush with one another. All or any of the back surface 602 of the island lead 6, the back surface 302 of the third lead 3, the back surface 402 of the fourth lead 4, and the back surface 502 of the fifth lead 5 may slightly protrude from the resin second surface 92.

[0089] From the resin third surface 93, multiple end faces 331 of the third lead 3 may be exposed to the first side y1 in the third direction y. The resin third surface 93 and the multiple end faces 331 of the third lead 3 may be flush with each other. Some or all of the multiple end faces 331 may slightly protrude from the resin third surface 93.

[0090] From the fourth resin surface 94, the multiple end faces 431 of the fourth lead 4 and the end face 531 of the fifth lead 5 may be exposed to the second side y2 in the third direction y. The fourth resin surface 94, the multiple end faces 431 of the fourth lead 4, and the end face 531 of the fifth lead 5 may be flush with one another. All or any of the multiple end faces 431 of the fourth lead 4 and the end face 531 of the fifth lead 5 may slightly protrude from the fourth resin surface 94.

[0091] From the resin fifth surface 95, the end face 341 of the third lead 3, the end face 441 of the fourth lead 4, and the multiple end faces 631 of the island lead 6 may be exposed to the first side x1 in the second direction x. The resin fifth surface 95, the end face 341 of the third lead 3, the end face 441 of the fourth lead 4, and the multiple end faces 631 of the island lead 6 may be flush with one another. All or any of the end face 341 of the third lead 3, the end face 441 of the fourth lead 4, and the multiple end faces 631 of the island lead 6 may slightly protrude from the resin fifth surface 95.

[0092] From the resin sixth surface 96, the end face 341 of the third lead 3, the end face 541 of the fifth lead 5, and the multiple end faces 631 of the island lead 6 may be exposed to the second side x2 in the second direction x. The resin sixth surface 96, the end face 341 of the third lead 3, the end face 541 of the fifth lead 5, and the multiple end faces 631 of the island lead 6 may be flush with one another. All or any of the end face 341 of the third lead 3, the end face 541 of the fifth lead 5, and the multiple end faces 631 of the island lead 6 may protrude slightly from the resin sixth surface 96.

[0093] The semiconductor device A1 can be mounted on a circuit board (not shown) or the like using the back surfaces 302, 402, and 502 exposed from the second resin surface 92 of the sealing resin 9 as mounting terminals. That is, the semiconductor device A1 may have a mounting surface on a second side z2 opposite to a first side z1, which is the side to which the element main surface 801 of the semiconductor element 8 faces in the first direction z. In addition, the back surface 602 may be used as a heat dissipation surface for dissipating heat from the semiconductor element 8.

[0094] Next, the operation of the semiconductor device A1 will be described.

[0095] 14, a portion of the semiconductor element 8 is housed in the first recess 610. The first conductive bonding material 901 includes a first portion 9011, a second portion 9012, and a third portion 9013. The semiconductor element 8 is bonded to the first recess 610 by the first portion 9011 and the second portion 9012. The semiconductor element 8 is bonded to the main surface 601 by the third portion 9013. This makes it possible to increase the volume of the first conductive bonding material 901, and to improve the bonding strength of the semiconductor element 8.

[0096] Relative to the third portion 9013, the first portion 9011 is located on the second side z2 in the first direction z, and is located at the bottom of the first recess 610. As a result, in the configuration shown in Fig. 14, even if a crack occurs near the third portion 9013 and propagates toward the first side x1 in the second direction x, it is possible to reduce the likelihood of the crack reaching the first portion 9011. This makes it possible to prevent the bonding of the semiconductor element 8 from becoming excessively unstable.

[0097] The side portion 892 covers only the portion of the element side surface 803 that is configured by the support layer 71. This makes it possible to reduce the likelihood that the crack will reach the first functional layer 73, the second functional layer 74, the third functional layer 75, etc., even if the crack propagates toward the first side x1 in the second direction x. This allows the semiconductor element 8 to function properly.

[0098] The side portion 892 covers only the portion of the element side surface 803 that is configured by the support layer 71. This reduces the influence on the first functional layer 73, the second functional layer 74, and the third functional layer 75, even if the element side surface 803 includes a portion that is configured by the first functional layer 73, the second functional layer 74, and the third functional layer 75.

[0099] When the semiconductor element 8 is a GaN-HEMT, the support layer 71 does not function as an active part for passing the current to be switched. Therefore, providing the second portion 9012 and the third portion 9013 does not directly contribute to reducing the resistance of the current path for the current to be switched. In this configuration, the provision of the second portion 9012 and the third portion 9013 can be said to be strongly intended to increase the bonding strength of the semiconductor element 8.

[0100] The size Za of the first portion 9011 is smaller than the size Zb of the third portion 9013. That is, the size Zb is larger than the size Za. This is suitable for increasing the bonding strength of the semiconductor element 8.

[0101] 15 to 20 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each modified example and each embodiment can be appropriately combined with each other as long as no technical contradiction occurs.

[0102] <First Modification of First Embodiment> 15 shows a first modified example of the semiconductor device A1. In the semiconductor device A11 of this modified example, the side portion 892 may cover the portion of the element side surface 803 that is formed by the support layer 71 and the portion that is formed by the insulating layer 78. The side portion 892 may cover the entire element side surface 803.

[0103] The element body 80 may have a recess 809. The recess 809 may be recessed from a first side z1 in the first direction z of the upper surface of the first functional layer 73 to a second side z2 in the first direction z. The recess 809 may penetrate the first functional layer 73, the first buffer layer 722, and the second buffer layer 721 in the first direction z. The recess 809 may reach the support layer 71. In FIG. 13 , the recess 809 is open to a second side x2 in the second direction x.

[0104] The recess 809 may be filled with a portion of the second insulating layer 782. That is, the end faces of the second buffer layer 721, the first buffer layer 722, and the first functional layer 73 may be covered with the second insulating layer 782. In the illustrated example, the element side surface 803 may be formed by the insulating layer 78 and the support layer 71, or may be formed by the second insulating layer 782 and the support layer 71.

[0105] This embodiment can increase the bonding strength of the semiconductor element 8. The side portion 892 covers the entire side surface 803 of the element, thereby further increasing the area of ​​the side portion 892. Therefore, the bonding strength of the semiconductor element 8 can be further increased.

[0106] The side portion 892 is in contact with the support layer 71 and the insulating layer 78, and is spaced apart from the first functional layer 73, the second functional layer 74, and the third functional layer 75. This reduces the possibility of unintended defects occurring due to electrical conduction between the first functional layer 73, the second functional layer 74, and the third functional layer 75 and the first conductive bonding material 901 and the island lead 6.

[0107] A recess 809 is formed in the element body 80, and the recess 809 is filled with a part of the insulating layer 78. This more reliably prevents the first functional layer 73, the second functional layer 74, and the third functional layer 75 from being electrically connected to the first conductive bonding material 901 and the island lead 6.

[0108] <Second Modification of First Embodiment> 16 shows a second modified example of the semiconductor device A1. In the semiconductor device A12 of this modified example, the element side surface 803 may include a flat portion 8031 ​​and a recessed portion 8032.

[0109] The flat portion 8031 ​​may face the second direction x or the third direction y and may be a flat surface. The flat portion 8031 ​​may be formed by the insulating layer 78 and a part of the support layer 71. The recess 8032 may be located on a second side z2 in the first direction z relative to the flat portion 8031 ​​and may be recessed from the flat portion 8031 ​​to a first side x1 in the second direction x in the illustrated portion.

[0110] The side portion 892 may be provided in the recess 8032. The side portion 892 may cover the recess 8032 and may expose the flat portion 80312.

[0111] This embodiment can increase the bonding strength of the semiconductor element 8. The element side surface 803 includes the recess 8032, and the side portion 892 is provided in the recess 8032, which more reliably prevents the first conductive bonding material 901 from extending beyond the support layer 71 toward the first side z1 in the first direction z.

[0112] <Third Modification of First Embodiment> 17 shows a third modified example of the semiconductor device A1. In the semiconductor device A13 of this modified example, the first recess 610 may include a bottom surface 611, one or more first side surfaces 612, and one or more intermediate surfaces 613.

[0113] The intermediate surface 613 is interposed between the bottom surface 611 and the first side surface 612. The shape of the intermediate surface 613 is not limited in any way and may be, for example, a concave curved surface. The intermediate surface 613 having such a configuration can be formed, for example, when the first recess 610 is formed by wet etching a metal plate material.

[0114] This embodiment can increase the bonding strength of the semiconductor element 8. As can be understood from this embodiment, the specific configuration of the first recess 610 is not limited in any way.

[0115] Second Embodiment 18 shows a semiconductor device according to a second embodiment of the present disclosure. In the semiconductor device A2 of this embodiment, the island lead 6 can have a protrusion 620.

[0116] The protrusion 620 is spaced apart from the first recess 610 in the second direction x or the third direction y when viewed in the first direction z. The shape of the protrusion 620 when viewed in the first direction z is not limited in any way and may be, for example, a rectangular ring shape. The protrusion 620 may protrude from the main surface 601 to a first side z1 in the first direction z.

[0117] The protrusion 620 may have, for example, a top surface 621 and a second side surface 622. The top surface 621 may be located on a first side z1 in the first direction z with respect to the main surface 601 and may face the first side z1 in the first direction z. The second side surface 622 may face toward the first recess 610 in the second direction x or the third direction y. The third portion 9013 may be in contact with the second side surface 622.

[0118] According to this embodiment, it is possible to increase the bonding strength of the semiconductor element 8. The provision of the convex portion 620 makes it possible to prevent the third portion 9013 from expanding excessively in the second direction x or the third direction y.

[0119] Third Embodiment 19 shows a semiconductor device according to a third embodiment of the present disclosure. In the semiconductor device A3 of this embodiment, the island lead 6 can have a second recess 630.

[0120] The second recess 630 is spaced apart from the first recess 610 in the second direction x or the third direction y when viewed in the first direction z. The shape of the second recess 630 when viewed in the first direction z is not limited in any way and may be, for example, a rectangular ring shape. The second recess 630 is recessed from the main surface 601 toward the second side z2 in the first direction z. The third portion 9013 may be in contact with the second recess 630. The second recess 630 may be filled with a portion of the third portion 9013.

[0121] According to the present embodiment, it is possible to increase the bonding strength of the semiconductor element 8. The provision of the second recess 630 makes it possible to prevent the third portion 9013 from expanding excessively in the second direction x or the third direction y.

[0122] <Fourth embodiment> 20 shows a semiconductor device according to a fourth embodiment of the present disclosure. The semiconductor device A4 of this embodiment differs in the number of one or more element side surfaces 803, the number of one or more side portions 892, and the number of one or more third portions 9013.

[0123] The element body 80 has a rectangular shape when viewed in the first direction z, and has four element side surfaces 803. The metal layer 89 includes two side portions 892. The two side portions 892 are provided so as to cover two of the four element side surfaces 803 that are spaced apart from each other in the second direction x. The first conductive bonding material 901 includes two third portions 9013 that respectively cover the two side portions 892.

[0124] This embodiment can increase the bonding strength of the semiconductor element 8. As can be understood from this embodiment, the number of one or more element side surfaces 803 may be the same as or different from the number of one or more side portions 892 and one or more third portions 9013.

[0125] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0126] [Appendix 1] Island Reed (6) and a semiconductor element (8) mounted on the island lead (6); a bonding material (901) interposed between the island lead (6) and the semiconductor element (8); a sealing resin (9) that covers the semiconductor element (8), the bonding material (901), and at least a part of the island lead (6); The island lead (6) has a main surface (601) facing a first side (z1) in a first direction (z) and a first recess (610) recessed from the main surface (601) toward a second side (z2) in the first direction (z), the first recess (610) includes a bottom surface (611) facing the first side (z1) in the first direction (z) and one or more first side surfaces (612) located between the main surface (601) and the bottom surface (611); The semiconductor element (8) is partially housed in the first recess (610) and has an element body (80) and a metal layer (89), The element body (80) has an element main surface (801) facing a first side (z1) in the first direction (z), an element back surface (802) facing a second side (z2), and one or more element side surfaces (803) facing a direction intersecting the first direction (z), the metal layer (89) includes a bottom portion (891) covering at least a portion of the back surface (802) of the element, and one or more side portions (892) each covering at least a portion of the one or more side surfaces (803) of the element and extending from the main surface (601) to the first side (z1) in the first direction (z); The semiconductor device (A1) includes a first portion (9011) interposed between the bottom portion (891) and the main surface (601), one or more second portions (9012) interposed between the one or more side portions (892) and the one or more first side surfaces (612), and one or more third portions (9013) interposed between the one or more side portions (892) and the main surface (601). [Appendix 2] The semiconductor device (A1) described in Appendix 1, wherein the element body (80) includes a support layer (71), a plurality of functional layers (73, 74, 75) stacked on the support layer (71), and an insulating layer (78) covering the plurality of functional layers (73, 74, 75). [Appendix 3] The semiconductor device (A1) according to Appendix 2, wherein the semiconductor element (8) has a HEMT structure including a drain electrode (81), a source electrode (82), and a gate electrode (83) arranged on the element main surface (801). [Appendix 4] The semiconductor device (A1) according to appendix 3, wherein the plurality of functional layers (73, 74, 75) include a nitride semiconductor. [Appendix 5] the element side surface (803) includes a portion formed by the support layer (71), The semiconductor device (A1) according to any one of appendixes 2 to 4, wherein the side portion (892) covers at least a part of the portion of the element side surface (803) that is formed by the support layer (71). [Appendix 6] The semiconductor device (A1) according to Appendix 5, wherein the side portion (892) is spaced from the plurality of functional layers (73, 74, 75) toward the second side (z2) in the first direction (z). [Appendix 7] 7. The semiconductor device (A1) according to claim 6, wherein the element side surface (803) includes a portion constituted by the plurality of functional layers (73, 74, 75). [Appendix 8] the element side surface (803) includes a portion formed by the support layer (71) and the insulating layer (78); the plurality of functional layers (73, 74, 75) are spaced apart from the element side surface (803); A semiconductor device (A11) described in any one of Appendices 2 to 4, wherein the side portion (892) covers at least a portion of the element side surface (803) that is formed by the support layer (71) and the insulating layer (78). [Appendix 9] The semiconductor device (A11) according to appendix 8, wherein the side portion (892) covers the entire element side surface (803). [Appendix 10] The semiconductor device (A1) according to any one of appendices 1 to 9, wherein the third portion (9013) covers the entire side portion (892). [Appendix 11] the island lead (6) further has a protrusion (620) that is spaced from the first recess (610) in a direction intersecting the first direction (z) and that protrudes from the main surface (601) toward the first side (z1) in the first direction (z); The semiconductor device (A2) according to any one of appendixes 1 to 10, wherein the third portion (9013) is in contact with the protrusion (620). [Appendix 12] the island lead (6) further has a second recess (630) that is spaced from the first recess (610) in a direction intersecting the first direction (z) and recessed from the main surface (601) toward the second side (z2) in the first direction (z); The semiconductor device (A3) according to any one of appendices 1 to 10, wherein the third portion (9013) contacts the second recess (630). [Appendix 13] A semiconductor device (A1) described in any one of Appendices 1 to 12, wherein the size (Za) of the first portion (9011) in the first direction (z) is smaller than the size (Zb) of the third portion (9013) in the first direction (z). [Appendix 14] The element body (80) has a plurality of element side surfaces (803), The semiconductor device (A1) according to any one of appendices 1 to 13, wherein the number of the one or more third portions (9013) is the same as the number of the plurality of element side surfaces (803). [Appendix 15] a first lead (1) joined to the drain electrode (81); The semiconductor device (A1) according to Appendix 3, further comprising: a second lead (2) joined to the source electrode (82). [Appendix 16] A semiconductor device (A13) described in any of Appendices 1 to 15, wherein the first recess (610) further includes one or more intermediate surfaces (613) interposed between the bottom surface (611) and the one or more first side surfaces (612). [Appendix 17] The semiconductor device (A13) according to Appendix 16, wherein the intermediate surface (613) is a concave curved surface. [Appendix 18] the element side surface (803) includes a flat portion (8031) and a recessed portion (8032); the recess (8032) is located on the second side (z2) in the first direction (z) with respect to the flat portion (8031) and is formed by the support layer (71); The semiconductor device (A12) according to appendix 5, wherein the side portion (892) is provided in the recess (8032). [Appendix 19] The semiconductor device (A12) according to Appendix 18, wherein the flat portion (8031) is exposed from the side portion (892). [Appendix 20] The element body (80) has a plurality of element side surfaces (803), The semiconductor device (A4) according to any one of appendices 1 to 13, wherein the number of the one or more third portions (9013) is less than the number of the plurality of element side surfaces (803). [Explanation of symbols]

[0127] A1, A11, A12, A13, A2, A3, A4: semiconductor device 1: First lead 2: Second lead 3: Third lead 4: 4th lead 5: 5th lead 6: Island Lead 8: Semiconductor element 9: Sealing resin 11,21: Main section 12,22: Comb part 15,25:Connection part 16,26:Joint 31, 41, 51, 61, 62, 32, 42, 52: Thin-walled section 33,34,43,44,53,54,63: Extension part 49: Relay section 71:Support layer 73: 1st functional layer 74:Second functional layer 75: 3rd functional layer 78: Insulating layer 80: Element body 81: Drain electrode 82: Source electrode 83: Gate electrode 89: Metal layer 91:Resin first side 92:Resin second side 93:Resin 3rd side 94:Resin 4th side 95:Resin 5th side 96:Resin 6th side 111,121,211,221: Surface 122,222: Tip surface 301, 401, 501, 601: Main surface 302,402,502,602:Back side 331,341,431,441,531,541,631: End face 610: First recess 611: Bottom 612 :1st side 613: Intermediate surface 620: Convex part 621:Top surface 622:Second side 630: Second recess 721: Second buffer layer 722: First buffer layer 761: Metal layer 771: Passivation layer 781: First insulating layer 782: Second insulating layer 801: Main element surface 802: Back side of element 803: Side of element 809: Recess 891 :Bottom 892: Side 901: First conductive adhesive material 902: Second conductive adhesive material 903: Third conductive adhesive material 904: Fourth conductive adhesive material 905: 5th conductive adhesive material 909: Wire 8031: Flat area 8032: Recess 9011 :Part 1 9012 :Part 2 9013: Part 3 9021: Second conductive bonding material 80312: Flat part x: second direction x1: Side 1 x2: Side 2 y: 3rd direction y1 : Side 1 y2: Side 2 z : first direction z1: Side 1 z2: Side 2

Claims

1. Island Reed and a semiconductor element mounted on the island lead; a bonding material interposed between the island lead and the semiconductor element; a sealing resin that covers the semiconductor element, the bonding material, and at least a part of the island lead; the island lead has a main surface facing a first side in a first direction and a first recess recessed from the main surface toward a second side in the first direction; the first recess includes a bottom surface facing the first side in the first direction and one or more first side surfaces positioned between the main surface and the bottom surface, the semiconductor element is partially accommodated in the first recess, and has an element body and a metal layer; the element body has an element main surface facing a first side in the first direction, an element back surface facing a second side, and one or more element side surfaces facing a direction intersecting the first direction, the metal layer includes a bottom portion covering at least a portion of the back surface of the element, and one or more side portions each covering at least a portion of the one or more side surfaces of the element and extending from the main surface to the first side in the first direction; The semiconductor device, wherein the bonding material includes a first portion interposed between the bottom portion and the main surface, one or more second portions interposed between the one or more side portions and the one or more first side surfaces, and one or more third portions interposed between the one or more side portions and the main surface.

2. The semiconductor device according to claim 1 , wherein the element body includes a support layer, a plurality of functional layers stacked on the support layer, and an insulating layer covering the plurality of functional layers.

3. 3. The semiconductor device according to claim 2, wherein said semiconductor element has a HEMT structure including a drain electrode, a source electrode, and a gate electrode arranged on said main surface of said element.

4. The semiconductor device according to claim 3 , wherein the plurality of functional layers include a nitride semiconductor.

5. the element side surface includes a portion constituted by the support layer, 5. The semiconductor device according to claim 2, wherein said side portion covers at least a part of a portion of said element side surface that is formed by said support layer.

6. The semiconductor device according to claim 5 , wherein the side portion is spaced apart from the plurality of functional layers on the second side in the first direction.

7. The semiconductor device according to claim 6 , wherein the element side surface includes a portion constituted by the plurality of functional layers.

8. the element side surface includes a portion constituted by the support layer and the insulating layer, the plurality of functional layers are spaced apart from the element side surface, 5. The semiconductor device according to claim 2, wherein said side portion covers at least a part of each of the portions of said element side surface that are constituted by said support layer and said insulating layer.

9. The semiconductor device according to claim 8 , wherein the side portion covers the entire side surface of the element.

10. The semiconductor device according to claim 1 , wherein the third portion covers the entire side portion.

11. the island lead further has a protrusion that is spaced from the first recess in a direction intersecting the first direction and protrudes from the main surface to the first side in the first direction, The semiconductor device according to claim 1 , wherein the third portion is in contact with the protrusion.

12. the island lead further has a second recess that is spaced from the first recess in a direction intersecting the first direction and recessed from the main surface toward the second side in the first direction, The semiconductor device according to claim 1 , wherein the third portion is in contact with the second recess.

13. The semiconductor device according to claim 1 , wherein a size of said first portion in said first direction is smaller than a size of said third portion in said first direction.

14. the element body has a plurality of element side surfaces, The semiconductor device according to claim 1 , wherein the number of said one or more third portions is the same as the number of said plurality of element side surfaces.

15. a first lead joined to the drain electrode; The semiconductor device according to claim 3 , further comprising: a second lead joined to said source electrode.

Images