Semiconductor device, power module and method for manufacturing semiconductor device

Abstract

To provide a semiconductor device, power module, and method for manufacturing a semiconductor device that can improve the reliability of the connection between a wire and a semiconductor chip.SOLUTION: A semiconductor device according to the embodiment comprises: a semiconductor chip having an upper electrode to which a wire is connected; a reinforcing portion in contact with the wire and the upper electrode of the semiconductor chip and containing a first resin; and at least one relaxation portion provided within the reinforcement portion and containing a second resin with a lower Young's modulus than the first resin.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor device, a power module, and a method for manufacturing a semiconductor device. [Background technology]

[0002] The semiconductor device includes, for example, a semiconductor chip and wires that electrically connect electrodes of the semiconductor chip to external terminals provided outside the semiconductor chip, and the ends of the wires are ultrasonically bonded to the electrodes of the semiconductor chip and the external terminals.

[0003] When a current is applied to the semiconductor chip via the wire, the semiconductor chip heats up. When the semiconductor chip heats up, thermal stress occurs between the wire and the semiconductor chip, which can cause the wire to peel off from the electrode of the semiconductor chip. For this reason, a technology has been proposed to reinforce the connection between the wire and the electrode of the semiconductor chip with resin.

[0004] However, in recent years, the amount of heat generated by semiconductor chips has tended to increase due to the increased amount of current flowing through the semiconductor chips. This increases the thermal stress generated between the semiconductor chip and the resin reinforcing the connection between the wire and the electrode of the semiconductor chip. This can cause the resin to peel off from the semiconductor chip or cause internal fractures or interfacial peeling in the resin. Peeling or fractures in the resin reduce the reinforcing effect, which can lead to the wire peeling off from the electrode of the semiconductor chip.

[0005] Therefore, there has been a demand for the development of a technology that can improve the reliability of the connection between the wire and the semiconductor chip. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2022 / 162825 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a semiconductor device, a power module, and a method for manufacturing a semiconductor device that can improve the reliability of connections between wires and semiconductor chips. [Means for solving the problem]

[0008] The semiconductor device according to the embodiment comprises a semiconductor chip having an upper electrode to which a wire is connected, a reinforcing portion that contacts the wire and the upper electrode of the semiconductor chip and contains a first resin, and at least one relaxation portion that is provided inside the reinforcing portion and contains a second resin having a lower Young's modulus than the first resin. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 2 is a schematic perspective view illustrating a power module. [Figure 2] 2 is a schematic partial cross-sectional view of the power module in FIG. 1 taken along line AA. [Figure 3] FIG. 3 is a schematic enlarged view of a portion B of the power module in FIG. [Figure 4] 10(a) to 10(c) are schematic enlarged views of the relaxation portion. [Figure 5] 10A and 10B are schematic diagrams illustrating a case where relaxation portions intersect with each other. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be illustrated with reference to the drawings. In the drawings, like components are designated by like reference numerals and detailed descriptions thereof will be omitted where appropriate.

[0011] The semiconductor device 1 according to this embodiment can be suitably used for applications requiring a large amount of current, such as power control. For example, the semiconductor device 1 can be provided in a power module. Therefore, the following description will be given of an example in which the semiconductor device 1 is provided in a power module.

[0012] FIG. 1 is a schematic perspective view illustrating a power module 100. As shown in FIG. FIG. 2 is a schematic partial cross-sectional view of the power module 100 in FIG. 1 taken along the line AA. FIG. 3 is a schematic enlarged view of part B of the power module 100 in FIG. In each figure, arrows X, Y, and Z represent three mutually orthogonal directions. For example, the X direction is the direction along the long side of the surface of the base 101a of the housing 101. For example, the Y direction is the direction along the short side of the surface of the base 101a of the housing 101. For example, the Z direction is the direction from the base 101a of the housing 101 toward the lid 101c. Furthermore, in the following description, the terms "up" and "down" used for convenience do not necessarily correspond to the direction of gravity.

[0013] As shown in FIGS. 1 to 3, the power module 100 includes a housing 101, a base 102, a conductive portion 103, a terminal 104, a first resin layer 105, a second resin layer 106, and a semiconductor device 1, for example.

[0014] The housing 101 has, for example, a box shape, and has a space therein in which the base 102, the conductive portion 103, the terminals 104, the second resin layer 106, and the semiconductor device 1 are provided.

[0015] The housing 101 has, for example, a base 101a, sides 101b, and a lid 101c. The base 101a is plate-shaped. The side 101b is frame-shaped and is provided on the periphery of the base 101a. The lid 101c is plate-shaped and is provided on the end of the side 101b opposite the base 101a. The lid 101c faces the base 101a across the side 101b. The base 101a, the side 101b, and the lid 101c are formed, for example, from an insulating resin.

[0016] The base 102 is plate-shaped and is provided inside the housing 101 (side portion 101b). The base 102 is provided on the surface of the base portion 101a that faces the lid 101c. The base 102 can be made of an insulating material such as ceramics.

[0017] The conductive portion 103 is provided on a surface 102a of the base 102 that faces the lid 101c. The conductive portion 103 is made of a conductive material such as copper. The conductive portion 103 can be formed, for example, by punching a copper plate.

[0018] The conductive portion 103 has, for example, a first portion 103a and a second portion 103b. The first portion 103a and the second portion 103b are spaced apart from each other and are insulated from each other.

[0019] The first portion 103a is electrically connected to the semiconductor device 1. When a plurality of semiconductor devices 1 are provided, a first portion 103a can be provided for each of the plurality of semiconductor devices 1. When a plurality of first portions 103a are provided, the plurality of first portions 103a can be provided spaced apart from each other. The plurality of first portions 103a are insulated from each other.

[0020] The second portion 103b is electrically connected to the terminal 104. As will be described later, the power module 100 is provided with two input terminals 104a and one output terminal 104b. Therefore, a second portion 103b can be provided for each input terminal 104a and output terminal 104b. The multiple second portions 103b are provided at a distance from each other. The multiple second portions 103b are insulated from each other.

[0021] For example, in the X direction, the second portion 103b to which the input terminal 104a is electrically connected is provided near one end of the base 102. For example, the second portion 103b to which the output terminal 104b is electrically connected is provided near the other end of the base 102. For example, the first portion 103a is provided between the second portion 103b to which the input terminal 104a is electrically connected and the second portion 103b to which the output terminal 104b is electrically connected.

[0022] The terminals 104 may be, for example, an input terminal 104a and an output terminal 104b. The power module 100 illustrated in FIG. 1 has two input terminals 104a and one output terminal 104b. A power supply external to the power module 100 is electrically connected to the two input terminals 104a. When power is applied to the input terminal 104a, the semiconductor device 1 performs power conversion. For example, the semiconductor device 1 can adjust the frequency and voltage to desired values, convert DC current to AC current, or convert AC current to DC current. Note that the functions of the semiconductor device 1 are not limited to those illustrated. The converted power is output to the outside of the power module 100 via the output terminal 104b.

[0023] The terminal 104 has, for example, a conductive portion 104c. The conductive portion 104c may be, for example, a conductive plate-like body. The conductive portion 104c may be formed, for example, by bending a strip-shaped copper plate. One end of the conductive portion 104c is electrically connected to the second portion 103b of the conductive portion 103 via the connecting portion 104d. The other end of the conductive portion 104c is provided on the end of the side portion 101b of the housing 101 opposite the base portion 101a. Note that a bent portion 104c1 is provided between one end and the other end of the conductive portion 104c, but this bent portion 104c1 may be omitted. That is, the shape of the conductive portion 104c can be appropriately changed depending on the arrangement of the terminals 104 (input terminal 104a, output terminal 104b). For example, each of the multiple terminals 104 may have conductive portions 104c having different shapes or may have conductive portions 104c having the same shape.

[0024] The second resin layer 106 is provided inside the housing 101. The second resin layer 106 is It covers the base 102, the conductive portion 103, the semiconductor device 1, and a first resin layer 105, which will be described later. The second resin layer 106 also covers, for example, the terminals 104 and the wires 12 of the semiconductor device 1.

[0025] The second resin layer 106 has a function of insulating the terminals 104, the semiconductor chip 11, the wires 12, etc., and a function of preventing foreign matter or moisture that has entered the inside of the housing 101 from adhering to the terminals 104, the semiconductor chip 11, the wires 12, etc. Therefore, the second resin layer 106 is preferably formed from a resin that has insulating properties and can easily adhere to the terminals 104, the semiconductor chip 11, the wires 12, etc. The Young's modulus of the resin contained in the second resin layer 106 can be made lower than the Young's modulus of the resin contained in the first resin layer 105. The second resin layer 106 can be formed, for example, from gel-like polymer silicone, so-called silicone gel.

[0026] At least one semiconductor device 1 can be provided. When multiple semiconductor devices 1 are provided, the semiconductor devices 1 provided in the first portion 103a of the conductive portion 103 can be arranged side by side and spaced apart from each other. For example, in the case of the power module 100, multiple semiconductor devices 1 are connected in series.

[0027] The semiconductor device 1 includes, for example, a semiconductor chip 11 and wires 12 . The semiconductor chip 11 may be, for example, a switching element or a rectifying element that can be used for power control. For example, the semiconductor chip 11 may be an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a PND (PN junction diode), an SBD (Schottky Barrier Diode), an FWD (Free Wheeling Diode), a Schottky barrier diode, etc. However, the type of the semiconductor device 1 is not limited to the examples given.

[0028] The lower electrode (bottom electrode) 11a of the semiconductor chip 11 is electrically connected to the first portion 103a of the conductive portion 103. The lower electrode 11a of the semiconductor chip 11 can be joined to the first portion 103a by, for example, soldering, ultrasonic bonding, silver sintering, or the like.

[0029] The upper electrode 11b of the semiconductor chip 11 is electrically connected to the second portion 103b of the conductive portion 103 via the wire 12. When a plurality of semiconductor devices 1 are arranged side by side, the upper electrode 11b of the semiconductor chip 11 is electrically connected via the wire 12 to the first portion 103a of the conductive portion 103 in which the adjacent semiconductor chip 11 is provided.

[0030] The wire 12 is a linear body containing, for example, aluminum. One end of the wire 12 is ultrasonically bonded to the upper electrode 11b of the semiconductor chip 11. The other end of the wire 12 is ultrasonically bonded to the second portion 103b or the first portion 103a of the conductive portion 103. The ultrasonic bonding can be performed by, for example, a wire bonding method. In this case, as shown in FIG. 2, wedge bonding can be performed on the first bonding side and the second bonding side.

[0031] The first resin layer 105 covers the surface of the semiconductor chip 11 on which the upper electrode (upper surface electrode) 11b is provided, and the upper electrode 11b. The first resin layer 105 is in contact with at least the wires 12 and the surface of the semiconductor chip 11 on which the upper electrode 11b is provided.

[0032] The first resin layer 105 has the function of insulating the upper electrode 11b side of the semiconductor chip 11 and the function of reinforcing the connection portion between the wire 12 and the upper electrode 11b. Therefore, the first resin layer 105 is preferably formed from a resin (which corresponds to an example of a first resin) that has insulating properties and a high Young's modulus. The first resin layer 105 can be formed from, for example, an epoxy-based resin. Furthermore, the first resin layer 105 is more preferably formed from, for example, a polyimide-based resin.

[0033] Next, the first resin layer 105 will be further described. When current is applied to the semiconductor chip 11 via the wire 12, the semiconductor chip 11 generates heat. In this case, the thermal expansion coefficient of the wire 12 containing aluminum is approximately 23 ppm / K. The thermal expansion coefficient of the semiconductor chip 11 containing SiC is approximately 4 ppm / K. Therefore, when the temperature of the semiconductor chip 11 rises due to heat generation, thermal stress occurs due to the difference in the thermal expansion coefficients. When thermal stress occurs, there is a risk that the wire 12 will peel off from the upper electrode 11b of the semiconductor chip 11.

[0034] In this case, the connection portion between the wire 12 and the upper electrode 11b can be reinforced if the first resin layer 105 is in contact with the wire 12 and the side of the semiconductor chip 11 on which the upper electrode 11b is provided. That is, the portion of the first resin layer 105 in contact with the side of the semiconductor chip 11 on which the upper electrode 11b is provided can be made into the reinforcing portion 105a.

[0035] As shown in Figure 3, if the reinforcing portion 105a is in contact with the wire 12 and the side of the semiconductor chip 11 on which the upper electrode 11b is provided, it is possible to prevent the wire 12 from peeling off from the upper electrode 11b due to thermal stress generated between the wire 12 and the semiconductor chip 11.

[0036] However, for example, the thermal expansion coefficient of the polyimide resin contained in the reinforcing portion 105a is approximately 20 ppm / K to 30 ppm / K. Therefore, thermal stress also occurs between the reinforcing portion 105a and the semiconductor chip 11. Since the reinforcing portion 105a is in contact with almost the entire end portion of the semiconductor chip 11 where the upper electrode 11b is provided, even if thermal stress occurs, the reinforcing portion 105a is unlikely to peel off from the semiconductor chip 11.

[0037] However, in recent years, the amount of heat generated by the semiconductor chip 11 has tended to increase due to an increase in the amount of current flowing through the semiconductor chip 11. This increases the thermal stress between the reinforcing portion 105a and the semiconductor chip 11, which may cause the reinforcing portion 105a to partially peel off from the semiconductor chip 11 or cause breakage or interfacial peeling inside the reinforcing portion 105a. If peeling or breakage occurs in the reinforcing portion 105a, the reinforcing effect of the reinforcing portion 105a is reduced, and there is a risk that the wire 12 may peel off from the upper electrode 11b.

[0038] 3, a relaxation portion 105b is provided inside the reinforcing portion 105a. The relaxation portion 105b extends in a direction from the reinforcing portion 105a toward the semiconductor chip 11.

[0039] The relaxation section 105b contains, for example, a resin (corresponding to an example of a second resin) having a lower Young's modulus than the resin contained in the first resin layer 105. The relaxation section 105b may contain, for example, the resin contained in the second resin layer 106. For example, the relaxation section 105b may contain silicone gel.

[0040] The provision of such relaxation portion 105b can relax the thermal stress generated between reinforcing portion 105a and semiconductor chip 11. This can prevent peeling or breakage of reinforcing portion 105a, and ultimately prevent wire 12 from peeling off upper electrode 11b. In other words, with semiconductor device 1 according to this embodiment, the reliability of the connection between wire 12 and semiconductor chip 11 can be improved.

[0041] 4(a) to 4(c) are schematic enlarged views of the relaxation portion 105b. As shown in FIG. 4(a) and FIG. 3, the relaxation portion 105b can penetrate between the surface 105a1 and the surface 105a2 of the reinforcing portion 105a. As shown in Figures 4(b) and 4(c), one end of the relaxation portion 105b may be exposed from the surface 105a1 or the surface 105a2, and the other end of the relaxation portion 105b may be located inside the reinforcing portion 105a. That is, it is only necessary that the relaxation portion 105b extends in the direction from the reinforcing portion 105a toward the semiconductor chip 11.

[0042] However, if the relaxation portion 105b penetrates between the surface 105a1 and the surface 105a2, the effect of relaxing the thermal stress can be increased, and the reliability of the connection between the wire 12 and the semiconductor chip 11 can be further improved.

[0043] As described above, the relaxation portion 105b can contain the resin contained in the second resin layer 106. Therefore, if the relaxation portion 105b is exposed from the surface 105a1 of the reinforcing portion 105a as shown in Figures 4(a) and 4(b), the relaxation portion 105b and the second resin layer 106 can be formed simultaneously, as will be described later.

[0044] The relaxation portion 105b may be columnar, or may be film-like extending in at least one of the X and Y directions. In this case, if the relaxation portion 105b is film-like, it becomes easier to relax the thermal stress over a wider area of ​​the reinforcing portion 105a.

[0045] Furthermore, if the shortest distance L between the opposing portions of the relaxation portion 105b is made too small in a direction intersecting the direction from the reinforcing portion 105a toward the semiconductor chip 11, the effect of relaxing the thermal stress may be insufficient. If the distance L is made too large, the rigidity of the reinforcing portion 105a may be reduced, and the reinforcing effect of the reinforcing portion 105a may be too small.

[0046] According to the findings of the present inventors, it is preferable that the distance L is 0.1 μm or more and 10 μm or less, which can provide a sufficient effect of alleviating thermal stress and a sufficient reinforcement effect.

[0047] At least one relaxation portion 105b may be provided, but in order to relax the thermal stress over a wide area of ​​the reinforcing portion 105a, it is preferable to provide a plurality of relaxation portions 105b.

[0048] When multiple relaxation portions 105b are provided, the multiple relaxation portions 105b can be arranged side by side as shown in Fig. 3. In this case, the number of relaxation portions 105b, the distance between the relaxation portions 105b, the distance L described above, and the like can be changed as appropriate depending on the size of the reinforcing portion 105a, the magnitude of the generated thermal stress, and the like.

[0049] In this case, it is possible to prevent the relaxation portions 105b from intersecting with each other, or to allow the relaxation portions 105b to intersect with each other.

[0050] FIG. 5 is a schematic diagram illustrating a case where the relaxation portions 105b intersect with each other. 5 is a schematic diagram of the relaxation portion 105b as viewed from the direction from the reinforcing portion 105a toward the semiconductor chip 11. As shown in FIG.

[0051] As shown in Fig. 5, at least some of the multiple relaxation portions 105b can be made to intersect with each other. In this way, the thermal stress of the reinforcement portion 105a can be relieved in the X direction and the Y direction. In this case, if at least some of the multiple relaxation portions 105b extend in random directions as shown in Fig. 5, it becomes easier to make the relaxation portions 105b intersect with each other, and ultimately it becomes easier to relieve the thermal stress of the reinforcement portion 105a in the X direction and the Y direction. The method for forming the relaxation portions 105b extending in random directions will be described later.

[0052] Next, a method for manufacturing the semiconductor device 1 will be illustrated. First, one end of the wire 12 is ultrasonically bonded to the upper electrode 11b of the semiconductor chip 11. The other end of the wire 12 is ultrasonically bonded to a conductive part or the like provided outside the semiconductor chip 11. The ultrasonic bonding can be performed by, for example, a wire bonding method. In this case, wedge bonding can be performed on the first bonding side and the second bonding side.

[0053] Next, the reinforcing portion 105a is formed to come into contact with the wire 12 and the side of the semiconductor chip 11 on which the upper electrode 11b is provided. For example, a resin dissolved in a solvent or the like is supplied to the side of the semiconductor chip 11 on which the upper electrode 11b is provided. The resin may be, for example, a polyimide resin. Subsequently, the supplied resin is cured to form the reinforcing portion 105a. In this case, the supplied resin is heated to about 30°C to 90°C to be temporarily dried, and then the temporarily dried resin is further heated to be hardened, thereby forming the reinforcing portion 105a. In this case, hardening can be carried out in a nitrogen gas atmosphere. For example, the heating temperature is about 200°C to 240°C, and the heating time is 1 hour or more.

[0054] Next, a plurality of relaxation portions 105 are formed. Here, the formation of the aforementioned relaxation portions 105b extending in random directions will be described. First, a treatment liquid is supplied to the reinforcing portion 105a formed on the semiconductor chip 11. For example, the semiconductor chip 11 on which the reinforcing portion 105a is formed can be immersed in the treatment liquid. The treatment liquid can be, for example, a mixture of a solvent and water. The solvent can be, for example, any solvent that can swell or dissolve the resin contained in the reinforcing portion 105a.

[0055] Next, ultrasonic vibrations are applied to the treatment liquid. In this case, the frequency of the ultrasonic vibrations can be set to about 23 kHz to 43 kHz, the temperature of the treatment liquid can be set to about 50° C., and the treatment time can be set to about 15 minutes. In this way, cracks extending in random directions can be formed in the reinforcing portion 105a.

[0056] It should be noted that simply immersing the semiconductor chip 11 on which the reinforcing portion 105a is formed in the processing liquid will not cause cracks to form in the reinforcing portion 105a. Furthermore, even if the semiconductor chip 11 on which the reinforcing portion 105a is formed is immersed in pure water and ultrasonic waves are applied to the pure water, cracks cannot be formed in the reinforcing portion 105a.

[0057] Next, a predetermined resin is filled into the cracks formed in the reinforcing portion 105a, thereby forming the relaxation portion 105b extending in random directions. For example, a dissolved resin is supplied onto the reinforcing portion 105a where a crack has been formed. The supplied resin penetrates into the crack, thereby filling the crack. The supplied resin can be, for example, silicone gel. Subsequently, the supplied resin is heated to about 60° C. to 100° C. and hardened, thereby forming the relaxing portions 105b extending in random directions.

[0058] The resin adhering to the surface of the reinforcing portion 105a opposite to the semiconductor chip 11 side may or may not be removed. 2, when the semiconductor device 1 is provided in a power module 100, a second resin layer 106 is provided on top of the first resin layer 105 that serves as the reinforcing portion 105a. As described above, the relaxation portion 105b can contain the resin contained in the second resin layer 106.

[0059] Therefore, it is possible to supply molten resin onto the first resin layer 105 (reinforcing portion 105a) where the crack has formed, and simultaneously form the relaxation portion 105b and the second resin layer 106. In such a case, the resin attached to the surface of the reinforcing portion 105a opposite to the semiconductor chip 11 side becomes the second resin layer 106.

[0060] In addition, when the relaxation portion 105b is provided in the first resin layer 105 (reinforcing portion 105a) provided in the power module 100, the same procedure as described above may be followed.

[0061] For example, a processing liquid may be supplied to the inside of the housing 101 in which the base 102, the conductive portion 103, the terminal 104, the first resin layer 105, and the semiconductor device 1 are provided, and ultrasonic waves may be applied to the processing liquid to form cracks in the first resin layer 105 (reinforcement portion 105a). If ultrasonic waves are applied to the processing liquid supplied inside the housing 101, foreign matter and dirt inside the housing 101 can also be removed.

[0062] Next, the melted resin is supplied onto the first resin layer 105 (reinforcing portion 105a) where the crack has been formed, and the supplied resin is heated and hardened, thereby simultaneously forming relaxation portions 105b extending in random directions and the second resin layer 106.

[0063] By doing as described above, the first resin layer 105 (reinforcing portion 105a) provided in the power module 100 can be provided with the relaxation portion 105b. In this way, the relaxation portion 105b and the second resin layer 106 can be formed in the same process, which simplifies the manufacturing process, shortens the time required for manufacturing, and ultimately reduces manufacturing costs.

[0064] As described above, the method for manufacturing the semiconductor device 1 according to the present embodiment can include the following steps. A step of connecting wires 12 to the upper electrodes 11b of the semiconductor chip 11. A step of forming a reinforcing portion 105a containing a first resin in contact with the wire 12 and the side of the semiconductor chip 11 on which the upper electrode 11b is provided. A step of forming a plurality of relaxation portions 105b provided inside the reinforcing portion 105a and containing a second resin having a lower Young's modulus than the first resin. Then, in the step of forming the plurality of relaxation portions 105b, a treatment liquid is supplied to the reinforcing portion 105a, ultrasonic vibration is applied to the treatment liquid, cracks are formed in the reinforcing portion 105a, and the second resin is filled into the cracks. The contents of each step can be the same as those described above, so detailed explanations will be omitted.

[0065] In addition, when the relaxation portion 105b has a form extending in any direction or is columnar, for example, a groove extending in any direction or holes aligned in any direction may be formed by irradiating laser light onto the reinforcing portion 105a formed on the semiconductor chip 11. Then, a predetermined resin may be filled into the formed grooves or holes. However, if the relaxation portions 105b extending in random directions are formed using the manufacturing method described above, it is possible to simplify the manufacturing process, shorten the time required for manufacturing, and ultimately reduce manufacturing costs.

[0066] Although several embodiments of the present invention have been described above, these embodiments are presented by way of example only and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, modifications, etc. can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention and its equivalents as set forth in the claims. Furthermore, the above-described embodiments can be implemented in combination with each other. [Explanation of symbols]

[0067] 1 semiconductor device, 11 semiconductor chip, 11a lower electrode, 11b upper electrode, 12 wire, 100 power module, 101 housing, 102 base, 103 conductive portion, 104 terminal, 105 first resin layer, 105a reinforcing portion, 105a1 surface, 105a2 surface, 105b relaxation portion, 106 second resin layer

Claims

1. a semiconductor chip having an upper electrode to which a wire is connected; a reinforcing portion that contacts the wire and the upper electrode of the semiconductor chip and that contains a first resin; At least one relaxation portion provided inside the reinforcing portion and including a second resin having a Young's modulus lower than that of the first resin; A semiconductor device comprising:

2. 2. The semiconductor device according to claim 1, wherein the buffer portion extends from the reinforcing portion toward the semiconductor chip.

3. The relaxation portion is provided in plurality, 3. The semiconductor device according to claim 1, wherein at least some of the relaxation portions intersect with each other when viewed from the reinforcing portion toward the semiconductor chip.

4. The relaxation portion is provided in plurality, 3. The semiconductor device according to claim 1, wherein at least some of the plurality of relaxation portions extend in random directions when viewed from the reinforcing portion toward the semiconductor chip.

5. 3. The semiconductor device according to claim 1, wherein the distance between opposing portions of the relaxation portion in a direction intersecting a direction from the reinforcing portion toward the semiconductor chip is 0.1 [mu]m or more and 10 [mu]m or less.

6. the first resin is a polyimide resin, 3. The semiconductor device according to claim 1, wherein the second resin is a silicone gel.

7. 3. The semiconductor device according to claim 1, wherein the wire contains aluminum and is wedge-bonded to the upper electrode.

8. The semiconductor device according to claim 1 or 2; a resin layer provided on the reinforcing portion of the semiconductor device and containing a second resin; A power module equipped with

9. connecting wires to the upper electrodes of the semiconductor chip; forming a reinforcing portion that is in contact with the wire and the side of the semiconductor chip on which the upper electrode is provided, and that includes a first resin; forming a plurality of relaxation sections provided inside the reinforcing section and including a second resin having a lower Young's modulus than the first resin; Equipped with In the step of forming the plurality of relaxation portions, A method for manufacturing a semiconductor device, comprising: supplying a processing liquid to the reinforcing portion; applying ultrasonic vibrations to the processing liquid to form cracks in the reinforcing portion; and filling the second resin into the cracks.

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