Manufacturing method for semiconductor device

Abstract

To increase the yield of a manufacturing step for a semiconductor device, and increase the mass-productivity of the semiconductor device.SOLUTION: A semiconductor device is manufactured by performing steps of: forming a first material layer 20 on a substrate; forming a second material layer 23 on the first material layer; and separating the first material layer and the second material layer. In addition, it is preferable to heat with the first material layer and the second material layer stacked before the separation. The first material layer includes gas (for example, water) containing one or both of hydrogen and oxygen. The first material layer includes metal oxide, for example. The second material layer includes resin. The first material layer and the second material layer are separated by cutting of the hydrogen bond. By the heating, moreover, water is precipitated at or near the interface between the first material layer and the second material layer. The first material layer and the second material layer are separated because the adhesion decreases due to the water existing at or near the interface.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a peeling method, a manufacturing method of a semiconductor device, and a manufacturing method of a display device. .

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Refers to devices in general. Transistors, semiconductor circuits, display devices, light-emitting devices, input devices, input / output devices , an arithmetic device, a storage device, and the like are embodiments of semiconductor devices. Power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.) and electronic devices have semiconductor devices. This may be the case. [Background technology]

[0004] Organic EL (Electro Luminescence) elements and liquid crystal elements are used. In addition, light emitting diodes (LEDs) are known. a light-emitting device equipped with a light-emitting element such as a light-emitting diode, and a display device using an electrophoresis method, etc. Electronic paper is also an example of a display device.

[0005] The basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light is emitted from the luminescent organic compound. A display device using such an organic EL element is thin, lightweight, and highly controllable. This makes it possible to realize a display device that is both durable and consumes low power.

[0006] In addition, semiconductor elements such as transistors and organic electroluminescence (EL) elements can be mounted on flexible substrates (films). By forming display elements such as L elements, a flexible display device can be realized.

[0007] In Patent Document 1, a support substrate (glass) on which a heat-resistant resin layer and an electronic element are provided via a sacrificial layer is The heat-resistant resin layer is peeled off from the glass substrate by irradiating the substrate with laser light. A method for making a flexible display device is disclosed. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-223823 Summary of the Invention [Problem to be solved by the invention]

[0009] One embodiment of the present invention is a novel peeling method, a method for manufacturing a semiconductor device, or a method for manufacturing a display device. One aspect of the present invention is to provide a peeling method that is low cost and has high mass productivity. It is an object of the present invention to provide a method for manufacturing a semiconductor device or a display device. An object of one embodiment of the present invention is to provide a peeling method with high yield. One object of one embodiment of the present invention is to manufacture a semiconductor device or a display device using a large-sized substrate. An object of one embodiment of the present invention is to manufacture a semiconductor device or a display device at low temperature. It shall be one.

[0010] An object of one embodiment of the present invention is to provide a display device with low power consumption. An object of one embodiment of the present invention is to provide a highly reliable display device. One object of the present invention is to reduce the thickness or weight of a display device. It is an object of the present invention to provide a display device having a curved surface. An object of the present invention is to provide a display device that is not easily damaged. It is an object of the present invention to provide a display device, an input / output device, an electronic device, or the like.

[0011] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0012] One aspect of the present invention is a method for manufacturing a semiconductor device, comprising the steps of forming a first material layer on a substrate, depositing a second material layer on the first material layer, and forming a layer of a semiconductor substrate and separating the first and second material layers; A method for fabricating a semiconductor device is disclosed. A first material layer is formed by mixing a gas containing hydrogen and / or oxygen. The gas is preferably water, for example. The second material layer includes a resin. The first material layer and the second material layer are separated by breaking the hydrogen bonds. For example, hydrogen bonding between a gas contained in the first material layer and the second material layer can be mentioned. The first material layer is formed so as to have a lower adhesion to the second material layer than to the substrate. is preferred.

[0013] Alternatively, one embodiment of the present invention is a method for forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a second material layer, and heating the first material layer and the second material layer in a stacked state; and separating the first material layer from the second material layer. The first material layer includes a gas containing hydrogen and / or oxygen. The gas is preferably water, for example. The second material layer includes a resin. In this case, water is precipitated at or near the interface between the first material layer and the second material layer. The adhesion between the first material layer and the second material layer is reduced due to water present at or near the interface. This separates them.

[0014] The first material layer may be titanium, molybdenum, aluminum, tungsten, silicon, or indium. formed with one or more of aluminum, zinc, gallium, tantalum, and tin. The first material layer preferably contains one or both of titanium and titanium oxide. The first material layer is preferably formed so as to have a laminated structure of titanium and titanium oxide. It is preferable that the insulating film is formed so as to have the following structure.

[0015] The second material layer is formed to have a region having a thickness of 0.1 μm or more and 5 μm or less. is preferred.

[0016] The second layer of material is formed to have a residue of a compound represented by structural formula (100). It is preferable that:

[0017] [ka]

[0018] The step of separating the first material layer and the second material layer is carried out while supplying a liquid to the separation interface. Preferably, the liquid comprises water.

[0019] In the step of forming the first material layer, a metal layer is formed on the substrate, and a surface of the metal layer is subjected to plasma treatment. The metal oxide layer may be formed by plasma treatment using oxygen or water vapor. It is preferable to expose the surface of the metal layer to an atmosphere containing one or both of (H2O).

[0020] One aspect of the present invention is a method for forming a metal oxide layer on a substrate, and then applying a resin or resin film on the metal oxide layer. forming a first layer using a material containing a fat precursor, and subjecting the first layer to a heat treatment; a resin layer is formed, and the metal oxide layer and the resin layer are separated. .

[0021] A metal layer is formed on a substrate, and a metal oxide layer is formed by performing plasma treatment on the surface of the metal layer. In the plasma treatment, oxygen or water vapor (H2O) or both are used. It is preferable to expose the surface of the metal layer to an atmosphere containing the above.

[0022] Alternatively, the first layer may be formed after the surface of the metal oxide layer is subjected to plasma treatment. Plasma treatment involves the use of an atmosphere containing one or more of the following: oxygen, hydrogen, or water vapor (H2O). It is preferable to expose the surface of the metal oxide layer to the atmosphere.

[0023] Alternatively, a metal layer is formed on a substrate, and the metal layer is heated in an atmosphere containing oxygen, A metal oxide layer may be formed.

[0024] Alternatively, the metal oxide layer may be heated in an oxygen-containing atmosphere before the first layer is formed. stomach.

[0025] The heat treatment for the first layer may be performed in an air atmosphere. Alternatively, the treatment may be carried out while flowing a gas containing oxygen.

[0026] It is preferable to separate the metal oxide layer and the resin layer while supplying a liquid containing water to the separation interface. The contact angle of the metal oxide layer with the liquid is preferably greater than 0° and equal to or less than 60°. I wish.

[0027] The resin layer is preferably formed so as to have a region having a thickness of 0.1 μm or more and 5 μm or less. It's nice. [Effects of the Invention]

[0028] According to one embodiment of the present invention, a novel peeling method, a method for manufacturing a semiconductor device, or a method for manufacturing a display device According to one aspect of the present invention, a low-cost, highly mass-producible peeling method can be provided. The present invention can provide a method for manufacturing a semiconductor device or a method for manufacturing a display device. According to one aspect of the present invention, a peeling method with high yield can be provided. In this case, a semiconductor device or a display device can be manufactured using a large-sized substrate. This allows the semiconductor device or display device to be manufactured at low temperatures.

[0029] According to one embodiment of the present invention, a display device with low power consumption can be provided. In this manner, a highly reliable display device can be provided. According to one aspect of the present invention, a flexible or According to one aspect of the present invention, a display device having a curved surface can be provided. According to one embodiment of the present invention, a novel display device and an input / output device can be provided. , or electronic devices, etc. can be provided.

[0030] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0031] [Figure 1] FIG. 2 is a schematic diagram showing an example of a peeling method. [Figure 2] FIG. 2 is a schematic diagram showing an example of a peeling method. [Figure 3] FIG. 2 is a schematic diagram showing an example of an interface between a metal oxide layer and a resin layer. [Figure 4] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 5] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 6] 1A and 1B are a cross-sectional view and a top view illustrating an example of a manufacturing method of a display device. [Figure 7] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 8] 1A and 1B are a top view and a cross-sectional view illustrating an example of a display device. [Figure 9] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 10] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 11] 1A and 1B are a cross-sectional view and a top view illustrating an example of a manufacturing method of a display device. [Figure 12] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 13] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 14] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 15] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 16] 1A and 1B are a cross-sectional view and a top view illustrating an example of a manufacturing method of a display device. [Figure 17] 1A and 1B are a top view and a cross-sectional view illustrating an example of a display device. [Figure 18] FIG. 1 is a diagram showing an example of a laminate manufacturing apparatus. [Figure 19] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 20] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 21] 1A and 1B are a cross-sectional view and a top view illustrating an example of a manufacturing method of a display device. [Figure 22] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 23] 1A and 1B are a top view and a cross-sectional view illustrating an example of a display device. [Figure 24] FIG. 1 is a perspective view showing an example of a display device. [Figure 25] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 26] FIG. 1 is a flow diagram illustrating an example of a method for manufacturing a display device. [Figure 27] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 28] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 29] FIG. 1 is a cross-sectional view showing an example of an input / output device. [Figure 30] FIG. 1 is a flow diagram illustrating an example of a method for manufacturing a display device. [Figure 31] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 32] 1A to 1C are cross-sectional views illustrating an example of a method for manufacturing a display device. [Figure 33] FIG. 1 is a cross-sectional view showing an example of an input / output device. [Figure 34] FIG. 2 is a diagram showing an example of a display module. [Figure 35] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 36] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 37] 1A to 1C are diagrams illustrating a method for producing and peeling off a sample according to Example 1. [Figure 38]FIG. 2 is a perspective view showing an apparatus used to measure the force required for peeling in Example 1. [Figure 39] FIG. 1 is a diagram illustrating the peeling results of the sample of Example 1. [Figure 40] FIG. 10 is a diagram illustrating the peeling results of the sample of Example 2. [Figure 41] 10 is a cross-sectional STEM photograph of the sample of Example 3. [Figure 42] Photographs showing the peeling results of the sample of Example 3 and cross-sectional STEM photographs. [Figure 43] Photographs showing the peeling results of the sample of Example 4. [Figure 44] 10 is a cross-sectional STEM photograph of the sample of Example 5. [Figure 45] Photographs showing the peeling results of the sample of Example 5 and cross-sectional STEM photographs. [Figure 46] FIG. 10 is a schematic cross-sectional view of a display device according to a sixth embodiment. [Figure 47] 10 is a display photograph of the display device of Example 6. DETAILED DESCRIPTION OF THE INVENTION

[0032] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0033] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0034] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0035] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be replaced with "conductive film." Alternatively, for example, the term "insulating film" can be changed to The term can be changed to "insulating layer."

[0036] In this specification, metal oxide is a broad term referring to metal oxides. Metal oxides are oxides. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called "OS"), For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal Oxides are sometimes called oxide semiconductors. In other words, the transistor can be a transistor including a metal oxide or an oxide semiconductor.

[0037] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). It may also be called hydroxybenzoxanthate (hydroxybenzoxanthate).

[0038] (Embodiment 1) In this embodiment, a peeling method and a manufacturing method of a display device according to one embodiment of the present invention will be described with reference to FIGS. 18 will be used to explain.

[0039] In this embodiment, a display device having a transistor and an organic EL element (active matrix This will be explained using an example of a display device (also called a glass-type organic EL display device). By using a flexible material, a flexible device can be created. One embodiment of the present invention is a light-emitting device, a display device, and an input / output device (touch panel) using an organic EL element. The present invention is not limited to semiconductor devices, light-emitting devices, display devices, and input / output devices using other functional elements. The present invention can be applied to various devices such as output devices.

[0040] In this embodiment, first, a first material layer, here a metal oxide layer, is formed on a substrate. Then, a second material layer, which is a resin layer in this case, is formed on the metal oxide layer. or a material containing a resin precursor, forming a first layer, and subjecting the first layer to a heat treatment. The resin layer is then separated from the metal oxide layer.

[0041] In this embodiment mode, a base layer (also referred to as a base layer) is formed between the substrate and the resin layer. The underlayer is a layer that has lower adhesion (adhesion) to the resin layer than the substrate. The following description will be given taking as an example a case where a metal oxide layer is used as the underlayer, but the present invention is not limited to this. .

[0042] Heat treatment can reduce the adhesion (bonding) between the metal oxide layer and the resin layer.

[0043] An example of the principle of separating the metal oxide layer and the resin layer will be described with reference to FIGS.

[0044] First, the bond between the metal oxide layer 20 and the resin layer 23 will be described with reference to FIG.

[0045] In FIG. 1, a metal oxide layer 20 and a resin layer 23 are laminated. The fat layer 23 may be the first layer (before heating).

[0046] It is believed that bonding occurs between the metal oxide layer 20 and the resin layer 23 (or the first layer). Specifically, chemical bonds such as covalent bonds, ionic bonds, and hydrogen bonds are formed in the metal oxide layer 20. and the resin layer 23 (or the first layer).

[0047] In step (i) of FIG. 1, the metal M contained in the metal oxide layer 20 and the carbon contained in the resin layer 23 are mixed. An example is shown where element C is bonded by oxygen O.

[0048] The laminated structure of the metal oxide layer 20 and the resin layer 23 (or the first layer) is heated to form a compound represented by the formula (1 ) (see below and Figure 1) occurs. By performing the heat treatment, H2O (water vapor) The bond of metal M-oxygen O-carbon C is broken. Then, the metal oxide layer 20 and the resin layer 23 are bonded together. The bond between them is a hydrogen bond.

[0049] MO-C+H2O→M-OH+C-OH (1)

[0050] In step (ii) of FIG. 1, the metal M and oxygen O contained in the metal oxide layer 20 are bonded to form a resin. An example is shown in which carbon C in layer 23 is bonded to another oxygen O. The two oxygens are respectively: It forms a covalent bond with another hydrogen. Also, the two oxygen atoms bond with each other. It forms hydrogen bonds with the hydrogen atoms present.

[0051] Hydrogen bonds are much weaker than covalent bonds and can be broken easily. Therefore, the metal oxide layer 20 and the resin layer 23 can be easily separated by physical force. It is possible.

[0052] In step (iii) of Figure 1, the oxygen and hydrogen bonded together are separated, forming a metal oxide. The metal oxide layer 20 and the resin layer 23 are separated from each other. The oxygen O is bonded to the carbon C of the resin layer 23 and another oxygen O is bonded to the carbon C of the resin layer 23. , each forming a covalent bond with another hydrogen.

[0053] As described above, the laminated structure of the metal oxide layer 20 and the resin layer 23 (or the first layer) is heated. This allows H2O to form a strong bond between the metal oxide layer 20 and the resin layer 23 (or the first layer). This converts the bond between the metal oxide layer 20 and the resin layer 23 into a weak hydrogen bond. This can reduce the force required to separate the two.

[0054] Next, referring to FIG. 2, the function of H2O in inhibiting the adhesion between the metal oxide layer 20 and the resin layer 23 will be described. The inhibitory effect will be explained below.

[0055] In FIG. 2, a metal oxide layer 20 is provided on a fabrication substrate 14, and a resin layer is formed on the metal oxide layer 20. A fat layer 23 is provided.

[0056] The interface between the metal oxide layer 20 and the resin layer 23, and one or both of the metal oxide layers 20 On the other hand, there are HO, hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H * ),acid Elementary radical (O * ), hydroxyl radical (OH * ) is present. These include the film formation process of the metal oxide layer 20, the doping process after the metal oxide layer 20 is formed, and the like. In step (i) of FIG. 2, a metal oxide layer 20 and a resin layer 21 are formed. The interface with the oil layer 23 and the metal oxide layer 20 contain H2O, H, O, etc. Here is an example.

[0057] The interface between the metal oxide layer 20 and the resin layer 23 and the H and O supplied into the metal oxide layer 20 , H2O, etc. solidify (harden, harden) the resin layer 23 (for example, polyimide, etc.). During the process (for example, heating at 350°C), H2O may precipitate at the interface. In this case, H2O precipitated at the interface between the metal oxide layer 20 and the resin layer 23 is , there is a possibility that the adhesion between the metal oxide layer 20 and the resin layer 23 is impaired. The H2O deposited at the interface with 3 has an inhibitory effect on adhesion. In step (ii), H2O in the metal oxide layer 20 is transferred to the interface between the metal oxide layer 20 and the resin layer 23. In step (ii) of FIG. 2, the water in the metal oxide layer 20 is precipitated at the interface. The hydrogen and the hydroxyl group (OH) are precipitated as H2O at the interface between the metal oxide layer 20 and the resin layer 23. Here is an example:

[0058] In step (iii) of FIG. 2, an example in which the metal oxide layer 20 and the resin layer 23 are separated is shown. When heated, H2O turns into water vapor and expands in volume. This causes the metal oxide layer The adhesion between the metal oxide layer 20 and the resin layer 23 becomes weak, and separation occurs between the metal oxide layer 20 and the resin layer 23. This can be done.

[0059] Next, the reaction shown in the above formula (1) and H2O involved in the above inhibitory action will be explained.

[0060] H2O is contained in the metal oxide layer 20, the resin layer 23, and the interface between the metal oxide layer 20 and the resin layer 23. It may be present at the interface.

[0061] In addition, in the metal oxide layer 20, in the resin layer 23, and at the interface between the metal oxide layer 20 and the resin layer 23 Hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H * ), Oxygen radical (O * ), hydroxyl radical (OH * ) etc. may be heated to become H2O. There is a match.

[0062] The inside of the metal oxide layer 20, the surface of the metal oxide layer 20 (the surface in contact with the resin layer 23), or the metal At the interface between the metal oxide layer 20 and the resin layer 23 (or the first layer), H2O, hydrogen (H), oxygen ( O), hydroxyl group (OH), hydrogen radical (H * ), oxygen radical (O * ), hydroxyradical Cal (OH * It is preferable to add one or more of the following:

[0063] In the peeling method according to one embodiment of the present invention, the reaction of the formula (1) and the above-described inhibitory action occur. In this case, the adhesion between the metal oxide layer 20 and the resin layer 23 may be further improved. In other words, the peelability between the metal oxide layer 20 and the resin layer 23 can be further increased. It is estimated that this is possible.

[0064] In the metal oxide layer 20, in the resin layer 23, and at the interface between the metal oxide layer 20 and the resin layer 23, etc. , HO, hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H * ), oxygen radio Cal (O * ), hydroxyl radical (OH * It is preferable that the hydroxy group has a large amount of hydroxy groups such as hydroxy groups. By increasing the amount of H2O added, the reaction can be promoted and the force required for separation can be reduced. can.

[0065] For example, when forming the metal oxide layer 20, the metal oxide layer 20 or the metal oxide layer 2 On the surface, H2O, hydrogen, oxygen, hydroxyl groups, hydrogen radicals (H * ), oxygen radical (O * ) , hydroxyl radical (OH * ) is preferably contained in a large amount.

[0066] Specifically, a metal layer is formed, and then a radical treatment is performed on the surface of the metal layer to form a metal oxide layer 2. In the radical treatment, oxygen radicals and hydroxyl radicals are preferably formed. It is preferable to expose the surface of the metal layer to an atmosphere containing at least one of the following: Plasma treatment is performed in an atmosphere containing either hydrogen or water vapor (H2O), or both. is preferred.

[0067] Alternatively, a metal oxide layer 20 is formed, and the surface of the metal oxide layer 20 is subjected to radical treatment. In the radical treatment, oxygen radicals, hydrogen radicals, and hydroxyl radicals are preferably used. It is preferable to expose the surface of the metal oxide layer 20 to an atmosphere containing at least one of the following. For example, the plasma is heated in an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O). It is preferable to perform Zuma processing.

[0068] The radical treatment can be carried out using a plasma generator or an ozone generator.

[0069] For example, oxygen plasma treatment, hydrogen plasma treatment, water plasma treatment, ozone treatment, etc. The oxygen plasma treatment can be carried out by generating plasma in an atmosphere containing oxygen. The hydrogen plasma treatment can be performed by generating plasma in an atmosphere containing hydrogen. Water plasma treatment is performed by generating plasma in an atmosphere containing water vapor (H2O). In particular, by performing the water plasma treatment, moisture can be removed from the surface or inside of the metal oxide layer 20. This is preferable because it can contain a large amount of

[0070] Contains two or more of oxygen, hydrogen, water (water vapor), and inert gas (typically argon). The plasma treatment may be performed in an atmosphere containing, for example, oxygen. plasma treatment in an atmosphere containing oxygen and water; , plasma treatment in an atmosphere containing water and argon, and plasma treatment in an atmosphere containing oxygen and argon. or plasma treatment in an atmosphere containing oxygen, water, and argon. By using argon gas as one of the gases for plasma treatment, it is possible to form a metal layer or This is preferable because it is possible to perform plasma treatment while damaging the metal oxide layer 20. It is suitable.

[0071] Two or more types of plasma treatments may be performed consecutively without exposure to the atmosphere. After the hot plasma treatment, a water plasma treatment may be performed.

[0072] As a result, hydrogen, oxygen, water, etc. are released onto the surface or inside of the metal oxide layer 20 as shown in FIG. Elementary radical (H * ), oxygen radical (O * ), hydroxyl radical (OH * ) etc. 3, the resin layer 23 contains hydrogen H bonded to carbon C, hydroxyl groups OH, and the like. Here are some examples of compounds that contain these: These may become H2O when heated.

[0073] The heat treatment is preferably carried out in an atmosphere containing oxygen. By heating this layer, a resin layer 23 containing a large amount of oxygen can be formed. The more the resin layer 23 and the metal oxide layer 20 are contained, the easier it is to separate them.

[0074] For example, the heat treatment can be performed while a gas containing oxygen is being flowed.

[0075] The heat treatment is preferably carried out in an air atmosphere. By doing so, it is possible to form the resin layer 23 containing a large amount of oxygen and moisture. The more the resin layer 23 contains, the easier it is to separate the resin layer 23 from the metal oxide layer 20. By heating the first layer in an atmosphere (without gas flow), the heat treatment can be performed while gas is flowing. In this case, it may be possible to form a resin layer 23 containing more water than when the resin layer 23 is heated.

[0076] The moisture in the resin layer 23 reduces the adhesion or bonding strength between the resin layer 23 and the metal oxide layer 20. For example, moisture may have an effect of forming a gap between the resin layer 23 and the metal oxide layer 20. This may have the effect of weakening or breaking the bond.

[0077] It is preferable to supply a liquid containing water to the separation interface before or during separation. The presence of water reduces the adhesion or bond between the resin layer 23 and the metal oxide layer 20. This reduces the force required for separation. By supplying the resin layer 23 with the metal oxide layer 20, the bond between the resin layer 23 and the metal oxide layer 20 can be weakened or broken. By utilizing the chemical bond with the liquid, the resin layer 23 and the metal oxide layer 20 For example, the resin layer 23 and the metal oxide layer 2 When hydrogen bonds are formed between the water and the tree, the water and the tree are bonded by supplying a liquid containing water. Hydrogen bonds are formed between the resin layer 23 and the metal oxide layer 20, and the resin layer 23 and the metal oxide It is believed that hydrogen bonds between the layer 20 are broken.

[0078] The metal oxide layer 20 preferably has a low surface tension and high wettability with respect to liquids including water. This allows the water-containing liquid to spread over the entire surface of the metal oxide layer 20, The water can be easily supplied to the metal oxide layer 20. Can be peeled off.

[0079] The contact angle of the metal oxide layer 20 with a liquid including water is preferably greater than 0° and not greater than 60°. It is more preferable that the angle is greater than 0° and not more than 50°. When the contact angle is high (for example, when the contact angle is less than about 20°), it is difficult to obtain an accurate value of the contact angle. The metal oxide layer 20 is preferably wettable to a liquid containing water. Therefore, even if the wettability with liquids including water is so high that the accurate value of the contact angle cannot be obtained, good.

[0080] The presence of a liquid containing water at the separation interface dissipates the static electricity generated during separation from the layer to be peeled. This prevents adverse effects on functional elements (such as destruction of semiconductor elements due to static electricity). It is also possible to use an ionizer or the like to neutralize the surface of the layer to be peeled that is exposed by the separation. good.

[0081] When a liquid is supplied to the separation interface, the surface of the layer to be peeled that is exposed by the separation may be dried. .

[0082] The temperature of the substrate during separation can be, but is not limited to, room temperature. During the separation, the temperature of the substrate is set to a temperature higher than room temperature but not higher than 200°C, preferably 100°C or higher but not higher than 200°C. For example, the substrate may be heated to a temperature of 130°C or higher and 200°C or lower. By raising the temperature above room temperature, the effect of water can be strengthened and the force required for separation can be reduced. When peeling with physical force (also called mechanical energy), the temperature of the substrate is increased to peel (substrate The peeling property can be further improved by heating the substrate. When the temperature is increased and the film is peeled off, it has the effect of assisting in increasing the peelability.

[0083] For example, the resin layer and the metal oxide layer may be separated while at least a portion of the substrate is heated. The layer to be peeled off from the substrate may be cooled during or after the separation.

[0084] The resin layer and the metal oxide layer may be separated while supplying a liquid at room temperature or higher and 100°C or lower.

[0085] Before separation, the substrate on which the resin layer is formed is kept in a high-humidity environment, more preferably in a high-temperature and high-humidity environment. In particular, it is preferable that the separation starting point is formed and a part of the separation interface is exposed. By storing the mixture at this temperature, moisture can be efficiently supplied to the separation interface. Specifically, the humidity of the storage environment is preferably between 50% and 100%. The temperature of the storage environment is preferably 70% or more and more preferably 100% or less. The temperature is preferably 0°C or lower, and more preferably 50°C or higher but 70°C or lower.

[0086] Similarly, it is preferable to carry out the separation in a high humidity environment, more preferably in a high temperature and high humidity environment. This can supply moisture to the separation interface, which may reduce the force required for separation. do.

[0087] In this embodiment, the metal oxide layer and the resin layer are formed under controlled conditions. The resin layer can be easily separated from the adhesive layer. There is no need for a step of irradiating the entire surface of the resin layer with laser light.

[0088] When the entire surface of the resin layer is irradiated with laser light, it is preferable to use a linear laser beam. However, the laser device for irradiating a linear laser beam is expensive and In this embodiment, the laser device is not required, and the running cost is significantly reduced. This makes it possible to reduce costs, and it is also easy to apply to large substrates.

[0089] In addition, when laser light is irradiated onto the resin layer through the substrate, foreign matter such as dust may be present on the surface of the substrate that is irradiated with laser light. If the resin layer is adhered to the substrate, uneven light irradiation occurs, resulting in areas of poor peelability on the resin layer. In this embodiment, the resin is separated by heat treatment. This improves the peelability of the layer. Even if foreign matter adheres to the substrate, uneven heating of the resin layer is unlikely to occur. This makes it difficult for the yield to decrease in the process of separating the resin layer from the substrate.

[0090] Since there is no process of irradiating the entire surface of the resin layer with laser light through the substrate, the substrate is It is possible to prevent damage caused by irradiation. Even if the substrate is used once, its strength does not decrease. This allows the substrate to be reused, thereby reducing costs.

[0091] Alternatively, in this embodiment, a metal oxide layer is first formed on a substrate. A first layer is formed on the first layer using a material containing a resin or a resin precursor. The resin layer is formed by subjecting the layer to a heat treatment. An insulating layer is formed to cover the end of the resin layer. Next, a channel is formed on the resin layer via the insulating layer. A transistor having a metal oxide in the region is formed. Next, at least a part of the resin layer is covered with a metal. The metal oxide layer and the resin layer are separated from each other to form the starting point for separation. Separate the two.

[0092] The substrate has a portion that contacts the resin layer and a portion that contacts the insulating layer. The insulating layer is provided to cover the end portion of the resin layer. The insulating layer has a higher density with respect to the metal oxide layer than the resin layer. By providing an insulating layer to cover the edge of the resin layer, the resin layer can be attached to the substrate. For example, the resin layer can be prevented from peeling off unintentionally during transportation of the substrate. By forming the starting point of separation, the metal oxide can be separated at the desired timing. In other words, in this embodiment, the metal oxide layer and the resin layer can be separated. The timing of the separation of the resin layer can be controlled and the force required for separation is small. The yield of the process of separating the metal oxide layer from the resin layer and the process of manufacturing the display device can be increased. do.

[0093] The display device of this embodiment mode has a metal oxide in a channel formation region of a transistor. The metal oxide can function as an oxide semiconductor.

[0094] Low Temperature Polysilicon (LTPS) is used in the channel formation region of the transistor. When using a crystalline polysilicon, the temperature is about 500 to 550°C. Since heat is required, the resin layer must be heat resistant. In order to mitigate damage at the time of application, it may be necessary to increase the thickness of the resin layer.

[0095] On the other hand, transistors that use metal oxide in the channel formation region can be heated to temperatures below 350°C, and even It can be formed at temperatures below 300°C, so the resin layer does not require high heat resistance. Therefore, the heat resistance temperature of the resin layer can be lowered, and the range of materials to be selected can be expanded. Transistors that use metal oxide in the channel formation region do not require the laser crystallization process. Therefore, the thickness of the resin layer can be made thin. This is expected to significantly reduce the cost of device fabrication. This is preferable because the process can be simplified compared to the case where the ion exchange is performed.

[0096] However, in the display device of one embodiment of the present invention, a metal oxide For example, the display device of this embodiment is not limited to a structure having a transistor channel. Silicon can be used for the channel formation region. Crystalline silicon can be microcrystalline silicon or crystalline silicon. Examples of the silicon include silicon, polycrystalline silicon, and single crystal silicon.

[0097] It is preferable to use LTPS for the channel forming region. It can be formed at a lower temperature than single crystal silicon and has a higher It has field-effect mobility and high reliability.

[0098] The thickness of the resin layer may be 0.1 μm or more and 5 μm or less. This allows the display device to be manufactured at low cost, and also allows the display device to be made lighter and thinner. Furthermore, the flexibility of the display device can be improved.

[0099] In this embodiment, a transistor or the like is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer. The heat resistance of the material can be evaluated, for example, by the weight loss rate due to heating, specifically, the 5% weight loss temperature. In the peeling method and the manufacturing method of the display device of this embodiment mode, the maximum temperature during the process is reduced. For example, in this embodiment, the 5% weight loss temperature of the resin layer is set to 200° C. or higher. 650℃ or less, 200℃ to 500℃, 200℃ to 400℃, or 200℃ This allows for a wider range of materials to be selected. The layer may have a 5% weight loss temperature greater than 650°C.

[0100] A manufacturing method of the display device of this embodiment mode will be specifically described below.

[0101] The thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device are formed by sputtering, Chemical Vapor Deposition (CVD) method, Blank evaporation method, Pulsed Laser Deposition (PLD) n) method, Atomic Layer Deposition (ALD) method, etc. The CVD method can be plasma enhanced chemical vapor deposition (PECVD). :Plasma Enhanced Chemical Vapor Depositi The thermal CVD method may be a metal organic chemical vapor deposition (MOCVD) method. CVD (Metal Organic CVD) method may also be used.

[0102] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by spin coating, dipping, Spray application, inkjet, dispensing, screen printing, offset printing, document printing For methods such as turn knife, slit coating, roll coating, curtain coating, and knife coating It can be formed more easily.

[0103] When processing the thin films that make up the display device, lithography methods can be used. Alternatively, island-shaped thin films may be formed by a film formation method using a shadow mask. Alternatively, thin films can be processed using nanoimprinting, sandblasting, lift-off, etc. In the photolithography method, a resist mask is formed on the thin film to be processed. The thin film is then processed by etching or the like, and the resist mask is removed. After forming a thin film having the above structure, the thin film is exposed to light and developed to be processed into a desired shape. And there is.

[0104] When light is used in the lithography method, the light used for exposure is, for example, i-line (wavelength 365nm) m), g-ray (wavelength 436 nm), h-ray (wavelength 405 nm), or a mixture of these In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can be used. It is also possible to use a liquid immersion exposure technique. Examples of light that can be used include extreme ultraviolet (EUV) and X-rays. Alternatively, an electron beam may be used instead of the light used for exposure. Extremely fine processing is possible using ultraviolet light, X-rays, or electron beams, and is therefore preferred. When exposure is performed by scanning a beam such as an electron beam, a photomath No sc is required.

[0105] For etching thin films, there are dry etching, wet etching, and sandblasting methods. etc. can be used.

[0106] [Removal method] First, a metal oxide layer 20 is formed on a substrate 14 (FIG. 4(A1)). A metal layer 19 and a metal oxide layer 20 are laminated on the substrate 14 (FIG. 4(A2)).

[0107] The substrate 14 to be fabricated has a rigidity sufficient to facilitate transportation and a resistance to temperatures applied during the fabrication process. The substrate 14 has heat resistance. Examples of materials that can be used for the substrate 14 include glass, Examples include quartz, ceramic, sapphire, resin, semiconductor, metal or alloy. Examples of the glass include alkali-free glass, barium borosilicate glass, and aluminoborosilicate glass. Acid glass and the like are included.

[0108] As described above, in this embodiment, a base layer is formed between the fabrication substrate 14 and the resin layer 23. The base layer is a layer that has lower adhesion (adhesion) to the resin layer 23 than the fabrication substrate 14. In this embodiment, the case where the metal oxide layer 20 is used will be described as an example, but the present invention is not limited to this. .

[0109] Specifically, the underlayer may contain titanium, molybdenum, aluminum, tungsten, or silicon. , indium, zinc, gallium, tantalum, tin, hafnium, yttrium, zirconium one or more of aluminum, magnesium, lanthanum, cerium, neodymium, bismuth, and niobium The underlayer may be a layer made of a metal, an alloy, or a compound thereof. The underlayer may contain titanium, molybdenum, aluminum, or other metals (such as metal oxides). one of aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, and tin It is preferred to have one or more.

[0110] The material of the underlayer is not limited to inorganic materials, but may be organic materials. Various organic materials that can be used for the EL layer of an EL element may also be used as the base layer. Therefore, a vapor-deposited film of an organic material can be used, which allows the formation of a film with low adhesion.

[0111] The metal layer 19 can be made of various metals, alloys, and the like.

[0112] The metal oxide layer 20 can be made of oxides of various metals. For example, titanium oxide (TiO x ), molybdenum oxide, aluminum oxide, tungsten oxide Indium tin oxide with silicon (ITSO), indium zinc oxide, In-G Examples include a-Zn oxide.

[0113] Other metal oxides include indium oxide, indium oxide containing titanium, titanium Indium oxide containing tin oxide (ITO), titanium containing ITO , indium zinc oxide containing tungsten, zinc oxide (ZnO), Zn containing gallium O, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide tin oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, tin oxide, and vinyl oxide Examples include smuth, titanates, tantalates, and niobates.

[0114] There is no particular limitation on the method for forming the metal oxide layer 20. For example, sputtering, plasma C It can be formed using the VD method, vapor deposition method, sol-gel method, electrophoresis method, spray method, etc. .

[0115] After forming the metal layer, oxygen is introduced into the metal layer to form the metal oxide layer 20. In this case, only the surface of the metal layer or the entire metal layer is oxidized. In this case, by introducing oxygen into the metal layer, a laminated structure of the metal layer 19 and the metal oxide layer 20 is formed. This is done (Figure 4(A2)).

[0116] As shown in FIG. 4(A2), a metal layer 19 is formed between the substrate 14 and the metal oxide layer 20. In this case, it is preferable to perform the separation process while heating the fabricated substrate 14. Because of its high conductivity, when the metal layer 19 is heated, heat is conducted evenly throughout the metal layer 19. Therefore, it is thought that more uniform peeling can be achieved.

[0117] For example, the metal layer can be oxidized by heating the metal layer in an atmosphere containing oxygen. It is preferable to heat the metal layer while flowing a gas containing oxygen. The temperature is preferably 100°C or higher and 500°C or lower, and more preferably 100°C or higher and 450°C or lower. The temperature is more preferably 100°C or higher and 400°C or lower, and even more preferably 100°C or higher and 350°C or lower. stomach.

[0118] The metal layer is preferably heated to a temperature below the maximum temperature in the fabrication of the transistor. This prevents the maximum temperature during the manufacture of the display device from becoming too high. By keeping the temperature below the maximum temperature in the manufacturing process of the transistor, This allows for the reuse of existing equipment, thereby reducing the need for additional capital investment. Therefore, it is possible to provide a display device with reduced production costs. When the manufacturing temperature of the capacitor is up to 350°C, the temperature of the heat treatment is preferably 350°C or less. I wish.

[0119] Alternatively, the metal layer can be oxidized by subjecting the surface of the metal layer to radical treatment. In the radical treatment, the atmosphere contains at least one of oxygen radicals and hydroxyl radicals. It is preferable to expose the surface of the metal layer to oxygen or water vapor (H2O). It is preferable to carry out the plasma treatment in an atmosphere containing one or both of them.

[0120] As described above, hydrogen, oxygen, hydrogen radicals (H * ) , oxygen radical (O * ), hydroxyl radical (OH * ) and other metal oxides. This also reduces the force required to separate the metal oxide layer 20 from the resin layer 23. It is preferable to perform radical treatment or plasma treatment to form 20 .

[0121] When the metal layer is oxidized by performing radical treatment or plasma treatment on the surface of the metal layer This eliminates the need for a process of heating the metal layer at a high temperature. Specifically, the maximum temperature in the manufacturing of the display device can be prevented from becoming too high. °C or less.

[0122] Alternatively, the metal oxide layer 20 can be formed under an oxygen atmosphere. The metal oxide film is formed by sputtering while flowing a gas containing metal oxide. In this case, too, the surface of the metal oxide layer 20 is subjected to radical treatment. In the radical treatment, oxygen radicals, hydrogen radicals, and hydroxyl radicals are preferably used. It is preferable to expose the surface of the metal oxide layer 20 to an atmosphere containing at least one of the following: For example, the process may be carried out in an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O). It is preferable to carry out plasma treatment.

[0123] For details of the radical treatment, please refer to the above-mentioned contents.

[0124] Other methods for introducing oxygen, hydrogen, water, etc. include ion implantation, ion doping, A plasma immersion ion implantation method or the like can be used.

[0125] The thickness of the metal layer 19 is preferably 1 nm or more and 100 nm or less, and more preferably 1 nm or more and 50 nm or less. More preferably, the thickness is 1 nm or more and 20 nm or less.

[0126] The thickness of the metal oxide layer 20 is preferably, for example, 1 nm or more and 200 nm or less, and more preferably 5 nm or more. The thickness is preferably 100 nm or less, and more preferably 5 nm or more and 50 nm or less. When the metal oxide layer 20 is formed using may be thicker than the thickness of the deposited metal layer.

[0127] Before or during separation, a liquid containing water is supplied to the interface between the metal oxide layer 20 and the resin layer 23. By doing so, it is possible to reduce the force required for separation. The smaller the contact angle, the greater the effect of liquid supply. The contact angle of the polymer layer 20 with a liquid containing water is preferably greater than 0° and less than 60°. A maximum of 50° or less is more preferable.

[0128] The metal oxide layer 20 preferably has a photocatalytic function. By irradiating the layer with light, a photocatalytic reaction can be induced. The bonding strength between the metal oxide layer and the resin layer is weakened without the need for irradiation with high-energy light such as The metal oxide layer 20 may include titanium oxide, tungsten oxide, and the like. Titanium oxide is preferable because it can reduce costs compared to tungsten oxide. I wish.

[0129] For example, ultraviolet light is irradiated onto the metal oxide layer 20. After the metal oxide layer 20 is formed, and the first Before forming the layer 24, the metal oxide layer is irradiated with ultraviolet light directly without passing through any other layer. Alternatively, before or during separation, the metal oxide layer 20 can be attached via the fabrication substrate 14. Ultraviolet light may be irradiated. For the irradiation of ultraviolet light, an ultraviolet lamp can be suitably used. Examples of ultraviolet lamps include mercury lamps, mercury xenon lamps, and metal halide lamps. It should be noted that the light is not limited to ultraviolet light, and light of a wavelength that activates the metal oxide layer may be irradiated appropriately. It is possible.

[0130] The metal oxide layer 20 may be made of titanium oxide doped with metal or nitrogen. When the metal oxide layer 20 is formed using titanium oxide to which the above element is added, the metal oxide layer 20 can be easily irradiated with a suitable material, not with ultraviolet light. Can be activated by visible light.

[0131] Next, a first layer 24 is formed on the metal oxide layer 20 (FIG. 4(B)).

[0132] FIG. 4B shows an example in which the first layer 24 is formed on the entire surface of the metal oxide layer 20 by using a coating method. The first layer 24 may be formed by a method other than this, such as printing. On the layer 20, an island-shaped first layer 24, a first layer 24 having an opening or an uneven shape, etc. is formed. That's fine.

[0133] The first layer 24 can be formed using various resin materials (including resin precursors).

[0134] The first layer 24 is preferably formed using a thermosetting material.

[0135] The first layer 24 may be formed using a photosensitive material, or a non-photosensitive material ( The insulating layer 11 may be formed using a non-photosensitive material.

[0136] When a photosensitive material is used, a part of the first layer 24 can be removed by a lithography method using light. Then, the resin layer 23 can be formed in a desired shape.

[0137] The first layer 24 is formed using a material containing a polyimide resin or a polyimide resin precursor. The first layer 24 is preferably made of, for example, a material containing a polyimide resin and a solvent, or The polyimide film can be formed using a material containing polyamic acid and a solvent. Since this material is suitable for use in a planarized film, the film-forming equipment and materials can be shared. Therefore, no new device or material is required to realize the configuration of one embodiment of the present invention.

[0138] Specifically, the resin layer 23 is made of a compound (oxydiphthalic acid) represented by the structural formula (100). It is preferred that the hydroxyl group has a residue.

[0139] [ka]

[0140] The resin layer 23 contains an acid component containing oxydiphthalic acid or an oxydiphthalic acid derivative, and an aromatic and an amine component containing an aromatic amine or an aromatic amine derivative, The oxydiphthalic acid derivatives include, for example, oxydiphthalic anhydride. The resin layer 23 may also contain fluorine. When the fluorine is contained, hydrogen bonds are formed between the metal oxide layer 20 and the resin layer 23 using the fluorine. This can sometimes happen.

[0141] Also, polyimide resin or polyimide resin that can be suitably used for the first layer 24 Table 1 shows the physical properties of the materials containing the precursors.

[0142] [Table 1]

[0143] The resin layer 23 can be formed using materials A to E shown in Table 1. The glass transition temperature (Tg) and 5% weight loss temperature of the material are , the higher the better.

[0144] Other resin materials that can be used to form the first layer 24 include, for example, acrylic. resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzophenone resin Examples of the resin include cyclobutene-based resins, phenolic resins, and precursors of these resins.

[0145] The first layer 24 is preferably formed using a spin coater. This allows a thin film to be formed uniformly on a large substrate.

[0146] The first layer 24 has a viscosity of 5 cP or more and less than 500 cP, preferably 5 cP or more and less than 100 cP. It is preferable to form the film using a solution having a viscosity of 10 cP or more and 50 cP or less. The lower the viscosity of the solution, the easier it is to apply. Also, the lower the viscosity of the solution, the less air bubbles are likely to be trapped. This can suppress the formation of high-quality films.

[0147] Other methods for forming the first layer 24 include dipping, spray coating, and inkjet. , dispensing, screen printing, offset printing, doctor knife, slit coat, Examples include roll coating, curtain coating, and knife coating.

[0148] Next, the first layer 24 is subjected to a heat treatment to form a resin layer 23 (FIG. 4(C) ).

[0149] The heat treatment reduces the adhesion or bonding strength between the metal oxide layer 20 and the resin layer 23. This can be done.

[0150] The heat treatment is preferably carried out in an atmosphere containing oxygen. For example, the force required to separate the metal oxide layer 20 from the resin layer 23 can be reduced. The higher the oxygen content of the atmosphere, the more oxygen can be contained in the resin layer 23. The fat layer and the metal oxide layer can be easily separated.

[0151] In the metal oxide layer 20, in the resin layer 23, or at the interface between the metal oxide layer 20 and the resin layer 23, etc. The water present in the resin layer 23 reduces the force required to separate the metal oxide layer 20 from the resin layer 23. It can be lowered.

[0152] The presence of water between the metal oxide layer 20 and the resin layer 23 allows the metal oxide layer 20 and the resin layer 23 to As a result, the adhesion or bond strength between the metal oxide layer 20 and the resin layer 23 decreases. The mixture can be easily separated at the interface.

[0153] Furthermore, by carrying out the heat treatment, water expands between the metal oxide layer 20 and the resin layer 23 (water (The resin layer 23 expands in volume as it turns into steam.) This improves the adhesion between the metal oxide layer 20 and the resin layer 23. In fact, the adhesiveness can be reduced.

[0154] The heat treatment is carried out, for example, in a state where the inside of the chamber of the heating device is filled with an oxygen-containing atmosphere. Alternatively, the heat treatment can be carried out in an atmospheric environment in a chamber of a heating device, a hot plate, or the like. This can be done using a rate or the like.

[0155] For example, the oxygen partial pressure in the atmosphere during the heat treatment is preferably 5% or more and less than 100%, and more preferably 10% or more. It is more preferable that the ratio is 15% or more but less than 100%, and even more preferable that the ratio is 15% or more but less than 100%.

[0156] The heat treatment is preferably carried out in an air atmosphere. Compared with the case where the process is performed while flowing the gas, the metal oxide layer 20, the resin layer 23, or the metal oxide It is easy to retain moisture at the interface between the metal oxide layer 20 and the resin layer 23. The force required to separate layer 20 and resin layer 23 can be reduced.

[0157] Alternatively, the heat treatment may be carried out while a gas containing oxygen is flowing into the chamber of the heating device. The heat treatment can be carried out, for example, by flowing only oxygen gas or a mixed gas containing oxygen gas. Specifically, oxygen, nitrogen or a rare gas (such as argon), A mixed gas containing the above may be used.

[0158] Depending on the heating device, a high oxygen content in the atmosphere may cause deterioration of the heating device. Therefore, when using a mixed gas containing oxygen gas, the proportion of oxygen in the total mixed gas flow rate is The ratio of the flow rate of the oxygen gas is preferably 5% or more and 50% or less, and more preferably 10% or more and 50% or less. It is more preferable to set the ratio to 15% or more and further more preferable to set the ratio to 50% or less.

[0159] The temperature of the heat treatment is preferably 100°C or higher and 500°C or lower, and more preferably 100°C or higher and 450°C or lower. More preferably, the temperature is 100°C or higher and 400°C or lower, and 100°C or higher and 350°C or lower. Even more preferable.

[0160] The higher the temperature of the heat treatment, the more easily the resin layer 23 can be peeled off.

[0161] The heat treatment can reduce degassed components (for example, hydrogen, water, etc.) in the resin layer 23. In particular, it is preferable to heat the resin layer 23 at a temperature equal to or higher than the temperature at which each layer to be formed on the resin layer 23 is formed. This significantly reduces degassing from the resin layer 23 during the transistor manufacturing process. It can be controlled.

[0162] For example, when the manufacturing temperature of the transistor is up to 350° C., the film that becomes the resin layer 23 is Heating is preferably carried out at a temperature of 0°C or higher and 480°C or lower, more preferably 350°C or higher and 400°C or lower. The temperature is preferably 350°C or higher and 375°C or lower. In this process, degassing from the resin layer 23 can be significantly suppressed.

[0163] The temperature of the heat treatment is preferably set to a temperature equal to or lower than the maximum temperature in the manufacture of a transistor. By setting the temperature below the maximum temperature in the manufacture of transistors, It is possible to reuse manufacturing equipment in the process, reducing additional capital investment. Therefore, the display device can be produced at reduced production costs. For example, if the manufacturing temperature of a transistor is up to 350°C, the temperature of the heat treatment is 350°C. It is preferable to do the following:

[0164] If the maximum temperature in the transistor manufacturing process is equal to the temperature of the heat treatment, By doing so, it is possible to prevent the maximum temperature in the manufacturing process of the display device from becoming too high, and This is preferable because it can reduce degassed components.

[0165] The longer the heat treatment time, the more easily the resin layer 23 can be peeled off.

[0166] By extending the treatment time, even if the heating temperature is relatively low, the heating temperature is higher. Therefore, it is possible to achieve peelability equivalent to that achieved under the conditions described above by adjusting the heating device configuration. If the heat temperature cannot be increased, it is preferable to increase the treatment time.

[0167] The heat treatment time is, for example, preferably 5 minutes or more and 24 hours or less, and more preferably 30 minutes or more and 12 hours or less. The heating time is more preferably 1 hour or more and even more preferably 6 hours or less. For example, the heat treatment may be performed by RTA (Rapid Thermal Annealing). In cases where the ion exchange method is used, the time may be less than 5 minutes.

[0168] Heating devices include electric furnaces and resistance heating elements that use heat conduction or heat radiation. Various devices can be used, such as a device that heats the object to be treated. as Rapid Thermal Anneal) equipment, LRTA (Lamp Rap) An RTA device such as a LR (Reversed Thermal Anneal) device can be used. TA equipment includes halogen lamps, metal halide lamps, xenon arc lamps, and carbon Light (electromagnetic) emitted from lamps such as arc lamps, high-pressure sodium lamps, and high-pressure mercury lamps The GRTA device uses high-temperature gas to heat the object to be treated. By using an RTA device, the processing time can be shortened. This is preferable for mass production. In addition, the heat treatment is carried out using an in-line heating device. You may go there without any questions.

[0169] Here, for example, when a resin is used for a planarization layer of a display device, the resin is oxidized, To prevent deterioration, the resin is cured in conditions that contain almost no oxygen. Generally, heating is done at the lowest possible temperature within the temperature range. Therefore, in one embodiment of the present invention, the surface of the first layer 24 that will become the resin layer 23 is exposed, and oxygen is actively introduced. At relatively high temperatures (e.g., temperatures above 200°C) while exposed to an atmosphere containing This allows the resin layer 23 to have high releasability.

[0170] The thickness of the resin layer 23 may be changed from the thickness of the first layer 24 by the heat treatment. For example, the solvent contained in the first layer 24 is removed, or the density decreases as hardening progresses. As a result of the increase in the volume, the resin layer 23 may become thinner than the first layer 24. Alternatively, the volume increases due to the inclusion of oxygen during the heat treatment, and the first layer 24 In some cases, the resin layer 23 may become thicker.

[0171] Before the heat treatment, a heat treatment (pre-bake) is performed to remove the solvent contained in the first layer 24. The temperature of the pre-baking treatment is determined appropriately depending on the material used. For example, the temperature can be between 50°C and 180°C, between 80°C and 150°C, or between 90°C and 180°C. The heating process can be carried out at a temperature between 0°C and 120°C. Alternatively, the heating process can be carried out in combination with a pre-baking process. Alternatively, the solvent contained in the first layer 24 may be removed by heat treatment.

[0172] The resin layer 23 has flexibility. The fabrication substrate 14 has lower flexibility than the resin layer 23.

[0173] The thickness of the resin layer 23 is preferably 0.01 μm or more and less than 10 μm, and more preferably 0.1 μm or more. It is more preferable that the thickness is 0.5 μm or more and 5 μm or less, and even more preferable that the thickness is 0.5 μm or more and 3 μm or less. By forming a thin resin layer, a display device can be manufactured at low cost. This allows the display device to be made lighter and thinner, and also increases the flexibility of the display device. By using a solution with low viscosity, it becomes easy to form a thin resin layer 23. However, However, the thickness of the resin layer 23 may be 10 μm or more. The thickness of the resin layer 23 may be set to 10 μm or more and 200 μm or less. This is preferable because it is possible to increase the rigidity of the display device.

[0174] The thermal expansion coefficient of the resin layer 23 is preferably 0.1 ppm / °C or more and 50 ppm / °C or less. It is more preferable that the concentration is 0.1 ppm / °C or more and 20 ppm / °C or less, and 0.1 ppm It is more preferable that the thermal expansion coefficient of the resin layer 23 is m / °C or more and 10 ppm / °C or less. The lower the temperature, the more likely it is that cracks will occur in the layers that make up the transistors, etc., due to heating, and the transistors will This can prevent damage to resistors and the like.

[0175] There is no particular limitation on the visible light transmittance of the resin layer 23. For example, it may be a colored layer. When the resin layer 23 is located on the display surface side of the display device, the resin layer 23 is Preferably, the transparent material has high transmittance to visible light.

[0176] Next, a peeled layer 25 is formed on the resin layer 23 (FIG. 4(D)).

[0177] The peeled layer 25 may be, for example, an insulating layer or a functional element (transistor, display element, etc.). It is possible.

[0178] The peeled layer 25 preferably has an insulating layer. The metal oxide layer 20 and the resin layer 23 are used to block hydrogen, oxygen, and water released from the metal oxide layer 20 and the resin layer 23. It is preferable that the function be

[0179] The layer to be peeled off is, for example, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film. For example, a silicon nitride film is preferably formed by a gas mixture of silane gas, hydrogen gas, and ammonium hydroxide. The insulating layer is formed by plasma CVD using deposition gas containing ammonium hydroxide (NH3). The thickness is not particularly limited. For example, the thickness is 50 nm or more and 600 nm or less, preferably 100 nm or less. The thickness can be 100 nm or more and 300 nm or less.

[0180] In this specification and the like, "silicon oxynitride" refers to a material containing more oxygen than nitrogen as its composition. In this specification, the term "silicon nitride oxide" refers to a material having a high content of silicon. The composition of the material is one in which the nitrogen content is greater than the oxygen content.

[0181] Then, a protective layer is formed on the peeled layer 25. The protective layer is a layer located on the outermost surface of the display device. The protective layer preferably has high transparency to visible light. By having such a property, scratches and cracks on the surface of the display device can be prevented. This is preferable.

[0182] FIG. 4(D) shows an example in which a substrate 75a is attached onto the peeled layer 25 using an adhesive layer 75b. show.

[0183] The adhesive layer 75b may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a thermosetting adhesive. Various curing adhesives such as adhesives and anaerobic adhesives can be used. It's fine.

[0184] The substrate 75a is made of, for example, polyethylene terephthalate (PET), polyethylene naphtha Polyester resins such as PEN, polyacrylonitrile resins, acrylic resins, Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polyestersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane San resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane Tan resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polyethylene Polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 75a may be made of glass, quartz, resin, or the like having a thickness sufficient to provide flexibility. Various materials such as metals, alloys, and semiconductors may be used.

[0185] Next, the fabrication substrate 14 is separated from the resin layer 23. Adhesion between the metal oxide layer 20 and the resin layer 23 Since the adhesiveness or the like is low, separation occurs at the interface between the metal oxide layer 20 and the resin layer 23 ( Figure 4(E)).

[0186] For example, by applying a pulling force in the vertical direction to the resin layer 23, the fabrication substrate 14 and the resin layer Specifically, a part of the upper surface of the substrate 75a is attracted and the substrate 75a is pulled upward. By pulling, the resin layer 23 can be peeled off from the fabrication substrate 14 .

[0187] Here, during separation, a liquid containing water, such as water or an aqueous solution, is added to the separation interface, and the liquid is By separating the particles so that they penetrate the surface, separation can be easily performed. The static electricity that is generated can have a negative effect on functional elements such as transistors (semiconductor elements can be electrostatically In FIG. 4(E), the liquid supply mechanism 21 is used to An example of supplying a liquid to the separation interface will be described.

[0188] The liquid to be supplied may be water (preferably pure water), neutral, alkaline, or acidic aqueous solution. Examples include aqueous solutions containing dissolved salts, ethanol, acetone, etc. Various organic solvents may also be used.

[0189] Before separation, a part of the resin layer 23 is separated from the substrate 14 to form a starting point for separation. For example, a sharp tool such as a blade may be inserted between the fabrication substrate 14 and the resin layer 23. Alternatively, a sharp tool may be inserted from the substrate 75a side to form a separation starting point. Alternatively, the resin layer 23 may be cut by laser ablation to form a starting point for separation. The starting point of separation may be formed by a method using a laser, such as a laser beam splitting method.

[0190] In this embodiment, the metal oxide layer 20 and the resin layer 23 (or the first layer 24) are laminated, The heat treatment is performed to improve the adhesion or bonding between the metal oxide layer 20 and the resin layer 23. Therefore, the laser irradiation can be performed on the entire surface of the resin layer 23. The substrate 14 and the resin layer 23 can be separated easily. A device can be fabricated.

[0191] By using the peeling method of this embodiment, a peeling method with low cost and high mass productivity, or a semiconductor For example, in the peeling method of the present embodiment, A substrate 14 (for example, a glass substrate) or a laminate of the prepared substrate 14 and the metal oxide layer 20 Since it can be reused multiple times, production costs can be reduced.

[0192] [Production method example 1] Next, an example of a method for manufacturing the display device of this embodiment will be described. The description of similar parts may be omitted.

[0193] First, a metal oxide layer 20 is formed on a substrate 14 (FIG. 5(A)). For details about No. 0, please refer to the description of the peeling method above.

[0194] Next, a first layer 24 is formed on the metal oxide layer 20 (FIG. 5(B)). For details, please refer to the description of the peeling method above.

[0195] In this embodiment, the first layer 24 is formed using a photosensitive and thermosetting material. The first layer 24 may be formed using a non-photosensitive material.

[0196] After the first layer 24 is formed, a heat treatment (pre-baking treatment) is performed to remove the solvent. After that, exposure is performed using a photomask. Then, development is performed to remove unnecessary parts. Next, the first layer 24 processed into the desired shape is subjected to a heat treatment. In FIG. 5(C), the resin layer 23 is formed in an island shape. An example of forming the following is shown.

[0197] The shape of the resin layer 23 is not limited to one island shape, but may be, for example, a shape of a plurality of islands or a shape having an opening. Also, exposure techniques using half-tone masks or gray-tone masks are possible. Alternatively, a concave-convex shape may be formed on the surface of the resin layer 23 by using a technique such as a multi-exposure technique or a multi-layer exposure technique.

[0198] A mask such as a resist mask or a hard mask is formed on the first layer 24 or the resin layer 23. By etching, the resin layer 23 can be formed in a desired shape. This is particularly suitable when a non-photosensitive material is used.

[0199] For example, an inorganic film is formed on the resin layer 23, and a resist mask is formed on the inorganic film. After etching the inorganic film using a hard mask, the inorganic film is used as a hard mask to form a resin layer. 23 can be etched.

[0200] Inorganic films that can be used as hard masks include various inorganic insulating films and conductive layers. Examples of the film include metal films and alloy films that can be used.

[0201] The mask can be formed to an extremely thin thickness and removed simultaneously with etching. This is preferable because it can eliminate the step of removing the mask.

[0202] For details of the heat treatment, the description of the heat treatment in the peeling method can be referred to.

[0203] Next, an insulating layer 31 is formed on the resin layer 23 (FIG. 5(D)). The resin layer 23 is not provided on the metal oxide layer 20. Therefore, the insulating layer 31 can be formed on and in contact with the metal oxide layer 20. Cut.

[0204] The insulating layer 31 is formed at a temperature lower than the heat-resistant temperature of the resin layer 23. It is preferable to form it at a high degree.

[0205] The insulating layer 31 prevents impurities contained in the resin layer 23 from being transferred to transistors and display elements to be formed later. For example, the insulating layer 31 can be a resin layer. When the resin layer 23 is heated, moisture contained in the resin layer 23 diffuses into the transistors and display elements. Therefore, it is preferable that the insulating layer 31 has high barrier properties.

[0206] The insulating layer 31 may be, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, Using inorganic insulating films such as silicon nitride oxide film, aluminum oxide film, and aluminum nitride film In addition, hafnium oxide film, yttrium oxide film, zirconium oxide film, Gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide Alternatively, two or more of the above insulating films may be stacked. In particular, a silicon nitride film is formed on the resin layer 23, and a silicon oxide film is formed on the silicon nitride film. It is preferable to form a silicon film.

[0207] The higher the deposition temperature, the denser and more effective the inorganic insulating film becomes, so it is formed at high temperatures. It is preferable.

[0208] The substrate temperature during the formation of the insulating layer 31 is preferably from room temperature (25°C) to 350°C. °C or higher and 300 °C or lower is more preferable.

[0209] Next, a transistor 40 is formed on the insulating layer 31 (FIG. 5(E)).

[0210] The structure of the transistor included in the display device is not particularly limited. It may be a staggered transistor, or an inverse staggered transistor. In addition, the transistor may be of either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0211] Here, the transistor 40 is a bottom-gate transistor having a metal oxide layer 44. The metal oxide layer 44 is used as a semiconductor layer of the transistor 40. The metal oxide can function as an oxide semiconductor.

[0212] In this embodiment, an oxide semiconductor is used as the semiconductor of the transistor. If a semiconductor material with a wider band gap and lower carrier density is used, This is preferable because it can reduce the current when the starter is in the off state.

[0213] The transistor 40 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. It is preferable to form the film at a temperature lower than the temperature of the heat treatment.

[0214] Specifically, first, the conductive layer 41 is formed on the insulating layer 31. The conductive layer 41 is formed by depositing a conductive film. After that, a resist mask is formed, and after the conductive film is etched, the resist mask is removed. It can be formed by removing

[0215] The substrate temperature during the deposition of the conductive film is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C. is more preferable.

[0216] The conductive layers of the display device are made of aluminum, titanium, chromium, nickel, and copper. , yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, etc. Metals or alloys containing metals as the main component can be used as single layer structures or laminated structures. Alternatively, indium oxide, indium tin oxide (ITO), and indium containing tungsten Indium oxide, indium zinc oxide with tungsten, indium oxide with titanium materials, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO), containing gallium A light-transmitting conductive material such as ZnO or silicon-containing ITO may also be used. In addition, polycrystalline silicon or oxide semiconductors that have been made low-resistance by including impurity elements, etc. Alternatively, a semiconductor such as silicon or a silicide such as nickel silicide may be used. A film containing graphene can also be used. The film containing graphene includes, for example, graphene oxide. In addition, a film containing an impurity element such as an oxide semiconductor can be formed by reducing the impurity element. A semiconductor may be used, or a conductive paste such as silver, carbon, or copper, or The conductive paste may be formed using a conductive polymer such as polythiophene. Conductive polymers are preferred because they are easy to apply.

[0217] Subsequently, the insulating layer 32 is formed. The insulating layer 32 is made of an inorganic insulating material that can be used for the insulating layer 31. The velum can be used.

[0218] Next, the metal oxide layer 44 is formed. After the metal oxide film is formed, the metal oxide layer 44 is A resist mask is formed, and the metal oxide film is etched, and then the resist mask is removed. It can be formed by removing

[0219] The substrate temperature during the deposition of the metal oxide film is preferably 350°C or less, and is preferably between room temperature and 200°C. A temperature range of room temperature or higher and 130°C or lower is more preferable, and a temperature range of higher than room temperature and 130°C or lower is even more preferable.

[0220] The metal oxide film is formed using either an inert gas or oxygen gas, or both. There is no particular limitation on the oxygen flow rate (oxygen partial pressure) during the formation of the metal oxide film. However, in order to obtain a transistor with high field-effect mobility, metal oxide The flow rate ratio of oxygen (oxygen partial pressure) during the deposition of the film is preferably 0% or more and 30% or less. % or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable.

[0221] The metal oxide film preferably contains at least indium or zinc. Preferably, the metal comprises iron and zinc.

[0222] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that the energy is 3 eV or more, and even more preferable that the energy is 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0223] The metal oxide film can be formed by a sputtering method. PECVD, thermal CVD, ALD, vacuum deposition, etc. may also be used.

[0224] Subsequently, the conductive layer 43a and the conductive layer 43b are formed. After forming a conductive film, a resist mask is formed, and the conductive film is etched. The conductive layer 43a and the conductive layer 43b can be formed by removing the mask. , and is connected to the metal oxide layer 44.

[0225] When the conductive layers 43a and 43b are processed, the metal that is not covered with the resist mask is removed. A portion of the metal oxide layer 44 may be thinned by etching.

[0226] The substrate temperature during the deposition of the conductive film is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C. is more preferable.

[0227] In this manner, the transistor 40 can be fabricated (FIG. 5(E)). In this case, a part of the conductive layer 41 functions as a gate, and a part of the insulating layer 32 functions as a gate insulating layer. The conductive layer 43a and the conductive layer 43b function as either a source or a drain. It functions as one side.

[0228] Next, an insulating layer 33 is formed to cover the transistor 40 (FIG. 6(A)). It can be formed in the same manner as the edge layer 31.

[0229] The insulating layer 33 may be a silicon oxide film or a silicon oxynitride film formed in an atmosphere containing oxygen. It is preferable to use an oxide insulating film such as a silicon oxide film. A silicon nitride film is laminated on the silicon dioxide film to form an insulating film that is difficult for oxygen to diffuse or penetrate. An oxide insulating film formed under an oxygen-containing atmosphere releases a large amount of oxygen when heated. Such an oxide insulating film that releases oxygen and an insulating film that releases oxygen can be formed. By laminating an insulating film that is difficult for metal oxides to diffuse and penetrate, heat treatment is performed. Oxygen can be supplied to the metal oxide layer 44. As a result, oxygen vacancies in the metal oxide layer 44 and Defects at the interface between the metal oxide layer 44 and the insulating layer 33 can be repaired, and the defect level can be reduced. This makes it possible to realize a highly reliable display device.

[0230] By the above steps, the insulating layer 31, the transistor 40, and the insulating layer 33 are formed on the resin layer 23. This can be achieved (Figure 6(A)).

[0231] At this stage, the transistor 40 is separated from the substrate 14 using a method to be described later. By doing so, it is possible to fabricate a device that does not have a display element. For example, transistor 4 0 and the transistor 40, a capacitor, a resistor, a wiring, and the like are formed. A semiconductor device can be manufactured.

[0232] Next, an insulating layer 34 is formed on the insulating layer 33 (FIG. 6(A)). Since the layer has a surface on which a display element is to be formed, it preferably functions as a planarizing layer. The insulating layer 34 can be made of an organic insulating film or an inorganic insulating film that can be used for the insulating layer 31. do.

[0233] The insulating layer 34 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. It is preferable to form the film at a temperature lower than the temperature.

[0234] When an organic insulating film is used for the insulating layer 34, the temperature applied to the resin layer 23 during the formation of the insulating layer 34 is The temperature is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C.

[0235] When an inorganic insulating film is used for the insulating layer 34, the substrate temperature during film formation is preferably from room temperature to 350° C. The temperature is preferably 100°C or higher and 300°C or lower, more preferably.

[0236] Next, openings are formed in the insulating layer 34 and the insulating layer 33 down to the conductive layer 43b.

[0237] Thereafter, the conductive layer 61 is formed. A part of the conductive layer 61 serves as a pixel electrode of the light emitting element 60. The conductive layer 61 functions as a conductive film. After forming a conductive film, a resist mask is formed on the conductive film. The resist mask can be removed after etching.

[0238] The conductive layer 61 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. It is preferable to form the film at a temperature lower than the temperature.

[0239] The substrate temperature during the deposition of the conductive film is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C. is more preferable.

[0240] Next, the insulating layer 35 is formed to cover the end of the conductive layer 61. The insulating layer 35 is formed by An organic insulating film or an inorganic insulating film that can be used can be used.

[0241] The insulating layer 35 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. It is preferable to form the film at a temperature lower than the temperature.

[0242] When an organic insulating film is used for the insulating layer 35, the temperature applied to the resin layer 23 during the formation of the insulating layer 35 is The temperature is preferably from room temperature to 350°C, and more preferably from room temperature to 300°C.

[0243] When an inorganic insulating film is used for the insulating layer 35, the substrate temperature during film formation is preferably from room temperature to 350° C. The temperature is preferably 100°C or higher and 300°C or lower, more preferably.

[0244] Next, the EL layer 62 and the conductive layer 63 are formed. It functions as a common electrode.

[0245] The EL layer 62 can be formed by a method such as vapor deposition, coating, printing, or ejection. When the L layer 62 is made separately for each pixel, a deposition method using a shadow mask such as a metal mask is used. Alternatively, the EL layer 62 can be formed by an ink jet method or the like. If this is not possible, a vapor deposition method that does not use a metal mask can be used.

[0246] The EL layer 62 can be made of either a low molecular weight compound or a high molecular weight compound. The compound may be included.

[0247] The conductive layer 63 can be formed by vapor deposition, sputtering, or the like.

[0248] The conductive layer 63 is formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23 and the EL layer 62. It is also preferable to form the film at a temperature lower than the temperature of the heat treatment.

[0249] In this manner, the light emitting element 60 can be formed (FIG. 6(A)). The conductive layer 61, a part of which functions as a pixel electrode, the EL layer 62, and a part of which functions as a common electrode are included. It has a structure in which functional conductive layers 63 are stacked.

[0250] Here, an example of fabricating a top-emission type light-emitting element as the light-emitting element 60 is shown. However, one embodiment of the present invention is not limited to this.

[0251] The light emitting elements are top emission type, bottom emission type, and dual emission type. For the electrode on the light extraction side, a conductive film that transmits visible light is used. It is also preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. .

[0252] Next, an insulating layer 74 is formed to cover the conductive layer 63 (FIG. 6(A)). It functions as a protective layer that prevents impurities such as water from diffusing into the light-emitting element 60. After the conductive layer 63 is formed, the insulating layer 74 is sealed without being exposed to the atmosphere. It is preferred to form a border layer 74 .

[0253] The insulating layer 74 is formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23 and the light emitting element 60. The insulating layer 74 is preferably formed at a temperature lower than the temperature of the heat treatment.

[0254] The insulating layer 74 is, for example, an inorganic insulating material with high barrier properties that can be used for the insulating layer 31 described above. It is preferable that the insulating film is included. It's fine.

[0255] The insulating layer 74 can be formed by using an ALD method, a sputtering method, or the like. The ALD method is preferable because it allows low-temperature film formation. 74 has good coverage, which is desirable.

[0256] Next, a protective layer 75 is formed on the insulating layer 74 (FIG. 6(A)). As shown in (D), an adhesive layer 75b and a substrate 75a may be used.

[0257] Next, starting points for separation are formed in the resin layer 23 (FIGS. 6(B1) and 6(B2)).

[0258] For example, a sharp tool such as a blade may be inserted from the protective layer 75 side to the inside of the end of the resin layer 23. Insert 65 and make a frame-shaped cut 64.

[0259] Alternatively, the resin layer 23 may be irradiated with laser light in a frame shape.

[0260] When forming a plurality of display devices from one fabrication substrate (multiple panels), one resin layer 23 can be used to form a plurality of display devices. For example, the gap in FIG. Multiple display devices are placed inside 64. This allows multiple display devices to be displayed together at once. The substrate can then be separated from the substrate on which it was produced.

[0261] Alternatively, a plurality of resin layers 23 may be used, with different resin layers 23 being formed for different display devices. 6(B3) shows an example in which four resin layers 23 are formed on the fabrication substrate. 3 By making frame-shaped cuts 64 in each, each display device is produced at a different timing. It can be separated from the substrate.

[0262] In the manufacturing method example 1, the metal oxide layer 20 is provided with a portion where the resin layer 23 is in contact and a portion where the insulating layer 31 is in contact. The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31 is determined by the metal oxide. The adhesiveness (bonding) between the metal oxide layer 20 and the resin layer 23 is higher than that between the metal oxide layer 20 and the resin layer 23. This can prevent the oxide layer 20 from unintentionally peeling off. In this way, the metal oxide layer 20 and the resin layer 23 can be separated at a desired timing. Therefore, the timing of separation can be controlled and the force required for separation is small. The yield of the separation process and the manufacturing process of the display device can be increased.

[0263] Next, the metal oxide layer 20 and the resin layer 23 are separated (FIG. 7(A)).

[0264] Then, a substrate 29 is attached to the exposed resin layer 23 using an adhesive layer 28 (FIG. 7( B).

[0265] The substrate 29 can function as a support substrate for the display device. It is preferable to use a resin film, and it is particularly preferable to use a resin film. Furthermore, display devices using film substrates can be made lighter and thinner than glass or metal. In addition, the flexibility of the display device can be improved. do.

[0266] By using the peeling method of this embodiment, the transistor 40 and the The light emitting element 60 and the like can be peeled off from the fabrication substrate 14 and transferred to the substrate 29 .

[0267] The adhesive layer 28 can be made of the same material as that used for the adhesive layer 75b. The material 29 can be any material that can be used for the substrate 75a.

[0268] The resin layer 23 used in this embodiment may be colored. When the light emitted from the light source 60 is extracted through the resin layer 23, the resin layer 23 is colored, Defects such as a decrease in light extraction efficiency, a change in the color of the extracted light, and a decrease in display quality Therefore, the colored resin layer 23 may be peeled off and exposed. It is preferably removed later.

[0269] The resin layer 23 is formed using a wet etching device, a dry etching device, an ashing device, or the like. In particular, the resin layer 23 can be removed by ashing using oxygen plasma. It is preferable to remove

[0270] In the manufacturing method example 1, the metal oxide layer 20 and the resin layer 23 (or the first layer 24) are laminated, The heat treatment is performed to improve the adhesion or bonding between the metal oxide layer 20 and the resin layer 23. Therefore, the laser irradiation can be performed on the entire surface of the resin layer 23. The substrate 14 and the resin layer 23 can be separated easily. A device can be fabricated.

[0271] [Display device configuration example 1] 8A is a top view of the display device 10A. 10A is a cross-sectional view of a display unit 381 of the device 10A and an example of a cross-sectional view of a connection portion with an FPC 372. FIG.

[0272] The display device 10A can be fabricated using the above-described fabrication method example 1. It is possible to hold the bent state and to bend repeatedly.

[0273] The display device 10A has a protective layer 75 and a substrate 29. The protective layer 75 side is the display surface of the display device. The display device 10A includes a display unit 381 and a drive circuit unit 382. FPC372 is attached to 0A.

[0274] The conductive layer 43c and the FPC 372 are electrically connected via the connector 76 (FIG. 8( The conductive layer 43c is made of the same material as the source and drain of the transistor. They can be formed in the same process.

[0275] The connector 76 may be made of various anisotropic conductive films (ACF). Conductive Film) and Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0276] The display device shown in FIG. 8C does not include the transistor 40 but includes a transistor 49. 8( a ), in that it does not have a resin layer 23 and has a colored layer 97 on the insulating layer 33. When a bottom-emission type light-emitting element 60 is used, the light-emitting element 60 The colored layer 97 may be disposed closer to the substrate 29 than the resin layer 23. By not leaving the oil layer 23 on the display device, the display quality of the display device can be improved.

[0277] The transistor 49 shown in FIG. 8C has the following structure in addition to the structure of the transistor 40 shown in FIG. 8B: The semiconductor device has a conductive layer 45 that functions as a gate.

[0278] The transistor 49 has a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. By adopting such a configuration, the threshold voltage of the transistor can be controlled. By connecting the two gates and applying the same signal to them, the transistor Such a transistor may drive a field effect transistor compared to other transistors. This allows for increased mobility and increased on-state current. Furthermore, the area occupied by the circuit portion can be reduced. By using a transistor with a large on-state current, it is possible to increase the size of the display device. Even if the number of wires increases when the resolution is increased, the signal delay in each wire can be reduced. This makes it possible to suppress display unevenness.

[0279] Alternatively, a potential for controlling the threshold voltage is applied to one of the two gates, and a drive voltage is applied to the other. By applying a potential for the transistor, the threshold voltage of the transistor can be controlled.

[0280] [Production method example 2] First, in the same manner as in the above peeling method, the metal oxide layer 20 to the insulating layer 31 are removed from the substrate 14. (Figure 9(A)).

[0281] Next, a transistor 80 is formed on the insulating layer 31 (FIG. 9(B)).

[0282] Here, the transistor 80 is a transistor having a metal oxide layer 83 and two gates. This shows the case where a printer is made.

[0283] The transistor 80 is formed at a temperature equal to or lower than the heat-resistant temperature of the resin layer 23. Formation at low temperatures is preferred.

[0284] Specifically, first, the conductive layer 81 is formed on the insulating layer 31. The conductive layer 81 is formed by depositing a conductive film. After that, a resist mask is formed, and after the conductive film is etched, the resist mask is removed. It can be formed by removing

[0285] Subsequently, the insulating layer 82 is formed. The insulating layer 82 is made of an inorganic insulating material that can be used for the insulating layer 31. The velum can be used.

[0286] Next, a metal oxide layer 83 is formed. The metal oxide layer 83 is formed by A resist mask is formed, and the metal oxide film is etched, and then the resist mask is removed. The metal oxide layer 83 can be formed by removing the metal oxide layer 44. Materials can be used.

[0287] Subsequently, an insulating layer 84 and a conductive layer 85 are formed. The insulating layer 84 is used for the insulating layer 31. The insulating layer 84 and the conductive layer 85 can be made of an insulating material that can be used as the insulating layer 84. After forming the insulating film and the conductive film that will become the conductive layer 85, a resist mask is formed. The conductive film can be formed by etching the conductive film and then removing the resist mask.

[0288] Next, the insulating layer 33 is formed to cover the metal oxide layer 83, the insulating layer 84, and the conductive layer 85. The edge layer 33 can be formed in the same manner as the insulating layer 31 .

[0289] The insulating layer 33 preferably contains hydrogen. The hydrogen contained in the insulating layer 33 The metal oxide diffuses into the adjacent metal oxide layer 83, causing a part of the metal oxide layer 83 to have a low resistance. A portion of layer 83 functions as a low resistance region, which increases the on-current of transistor 80 and The field effect mobility can be improved.

[0290] Next, an opening is formed in the insulating layer 33 down to the metal oxide layer 83 .

[0291] Subsequently, the conductive layer 86a and the conductive layer 86b are formed. After forming a conductive film, a resist mask is formed, and the conductive film is etched. The conductive layer 86a and the conductive layer 86b can be formed by removing the mask. , and is electrically connected to the metal oxide layer 83 through the opening in the insulating layer 33 .

[0292] In this manner, the transistor 80 can be manufactured (FIG. 9B). In this case, a part of the conductive layer 81 functions as a gate, and a part of the insulating layer 84 functions as a gate insulating layer. A part of the insulating layer 82 functions as a gate insulating layer, and a part of the conductive layer 85 functions as a gate. The metal oxide layer 83 has a channel region and a low resistance region. The low resistance region is the portion connected to the conductive layer 86a. and a portion connected to the conductive layer 86b.

[0293] Next, the insulating layer 34 to the light emitting element 60 are formed on the insulating layer 33 (FIG. 9(C)). For these steps, see Example of Preparation Method 1.

[0294] In addition, the steps of FIGS. 10(A) to 10(C) are carried out independently of the steps of FIGS. 9(A) to 9(C). First, in the same manner as in the process of forming the metal oxide layer 20 on the substrate 14, Then, a metal oxide layer 92 is formed (FIG. 10(A)). Next, a resin layer 2 is formed on the metal oxide layer 20. Similarly to the process of forming the third layer, a first layer is formed on the metal oxide layer 92 and then subjected to a heat treatment. Thus, a resin layer 93 is formed (FIG. 10(B)). Then, an insulating layer 31 is formed on the resin layer 23. In the same manner as in the process of forming the insulating layer 95, an insulating layer 95 is formed on the resin layer 93 to cover the end portion of the resin layer 93 ( Figure 10(B)).

[0295] Next, a colored layer 97 and a light-shielding layer 98 are formed on the insulating layer 95 (FIG. 10(C)).

[0296] A color filter or the like can be used as the colored layer 97. The colored layer 97 is Place it so that it overlaps with the display area of ​​the

[0297] A black matrix or the like can be used as the light-shielding layer 98. The light-shielding layer 98 is an insulating layer. Place it so that it overlaps with 35.

[0298] Next, the surface of the fabrication substrate 14 on which the transistors 80 and the like are formed and the resin layer of the fabrication substrate 91 are The surface on which 93 and the like are formed is attached using an adhesive layer 99 (FIG. 10(D)).

[0299] Next, starting points for separation are formed in the resin layer 23 (FIGS. 11(A) and 11(B)). Either of the substrates 91 may be separated first. Here is an example of separating 14.

[0300] For example, a laser beam 66 is irradiated onto the resin layer 23 in a frame shape from the side of the fabrication substrate 14 (FIG. 11( (See the laser beam irradiation area 67 shown in B). This is suitable for use with a hard substrate.

[0301] There is no particular limitation on the laser used to form the separation starting point. For example, a continuous wave laser Laser beam irradiation conditions (frequency, power) can be adjusted. -density, energy density, beam profile, etc.) are determined by the thickness of the fabricated substrate and resin layer, material, etc. The temperature should be controlled appropriately taking into consideration the above.

[0302] In the manufacturing method example 2, the portion on the metal oxide layer 20 where the resin layer 23 is in contact and the portion on the metal oxide layer 20 where the insulating layer 31 is in contact are formed. The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31 is determined by the metal oxide. The adhesiveness (bonding) between the metal oxide layer 20 and the resin layer 23 is higher than that between the metal oxide layer 20 and the resin layer 23. It is possible to prevent the metal oxide layer 92 from being accidentally peeled off from the oxide layer 20. The metal oxide layer 92 has a portion that contacts the resin layer 93 and a portion that contacts the insulating layer 95. The adhesiveness (adhesion) between the metal oxide layer 92 and the insulating layer 95 is determined by the adhesiveness (adhesion) between the metal oxide layer 92 and the resin layer 93. Therefore, the resin layer 93 is prevented from being unintentionally peeled off from the metal oxide layer 92. It can be suppressed.

[0303] Then, the starting point of separation is formed only in one of the resin layer 23 and the resin layer 93. The timing of forming the separation starting point can be changed depending on the resin layer 93. 14 and the substrate 91 can be separated in separate steps. Furthermore, the yield of the manufacturing process of the display device can be increased.

[0304] The laser light 66 does not need to be irradiated onto the entire surface of the resin layer 23, but is irradiated onto a portion of the surface. Therefore, there is no need for expensive laser equipment with high running costs.

[0305] Next, the fabrication substrate 14 and the transistor 80 are separated (FIG. 12(A)). The inner portion irradiated with the laser beam 66 (the inner portion irradiated with the laser beam 67 shown in FIG. 11(B)) 12(A) shows an example in which the substrate 14 is separated from the substrate 14. In the case where the laser beam 66 is irradiated in a frame-like shape, separation occurs in the adhesive layer 99 ( The adhesive layer 99 may be cohesively broken (not limited to this example). On the other hand, the adhesive layer 99 separates from the insulating layer 95 or the insulating layer 33 (interfacial breakdown). This can sometimes result in adhesive failure.

[0306] In the second example of the manufacturing method, the metal oxide layer 20 and the resin layer 23 (or the first layer 24) are laminated, The heat treatment is performed to improve the adhesion or bonding between the metal oxide layer 20 and the resin layer 23. Therefore, the laser irradiation can be performed on the entire surface of the resin layer 23. The substrate 14 and the resin layer 23 can be separated easily. A device can be fabricated.

[0307] Next, the resin layer 23 exposed by separating it from the fabricated substrate 14 and the substrate 29 are bonded to the adhesive layer 2 8 is used to bond the display device (FIG. 12(B)). The substrate 29 functions as a support substrate for the display device. It is possible.

[0308] Next, starting points for separation are formed in the resin layer 93 (FIG. 13(A)).

[0309] In FIG. 13A, a sharp object such as a blade is inserted from the substrate 29 side to the inside of the end of the resin layer 93. The tool 65 is inserted into the substrate 29 to make a frame-shaped cut. be.

[0310] Alternatively, in the same manner as when the separation starting point is formed in the resin layer 23, the resin layer 9 3 may be irradiated with laser light in a frame shape.

[0311] By forming the separation starting point, the fabrication substrate 91 and the resin layer 93 can be separated at a desired timing. Therefore, the timing of separation can be controlled and the force required for separation can be adjusted. This makes it possible to increase the yield in the separation process and the manufacturing process of the display device. do.

[0312] Next, the manufacturing substrate 91 and the transistor 80 are separated (FIG. 13(B)). 9 shows an example in which an inner portion of the cut is separated from the substrate 91.

[0313] In the second example of the manufacturing method, the metal oxide layer 92 and the resin layer 93 (or the first layer) are laminated and heated. This treatment reduces the adhesion or bond between the metal oxide layer 92 and the resin layer 93. Therefore, it is possible to reduce the thickness of the resin layer 93 without irradiating the entire surface of the resin layer 93 with laser light. The substrate 91 and the resin layer 93 can be separated. This allows the display device to be manufactured at low cost. can be produced.

[0314] Next, the resin layer 93 exposed by separating it from the fabricated substrate 91 and the substrate 22 are bonded to the adhesive layer 1. 3 is used to bond them together (FIG. 14(A)). The substrate 22 functions as a support substrate for the display device. It is possible.

[0315] In FIG. 14A, the light emitted from the light emitting element 60 is transmitted through the colored layer 97, the insulating layer 95, and the resin layer 9. Therefore, the visible light transmittance of the resin layer 93 is In one embodiment of the present invention, the thickness of the resin layer 93 can be reduced. Therefore, the transmittance of visible light through the resin layer 93 is increased, and the reduction in the light extraction efficiency of the light emitting element 60 is prevented. It can be suppressed.

[0316] The resin layer 93 may be removed. This further increases the light extraction efficiency of the light emitting element 60. In FIG. 14(B), the resin layer 93 is removed, and the insulating layer 9 is bonded to the insulating layer 9 by using the adhesive layer 13. 5 shows an example in which a substrate 22 is bonded.

[0317] The adhesive layer 13 can be made of the same material as can be used for the adhesive layer 75b.

[0318] The substrate 22 can be made of any material that can be used for the substrate 75a.

[0319] In Manufacturing Method Example 2, a display device is manufactured by performing the peeling method of one embodiment of the present invention twice. In one embodiment of the present invention, functional elements and the like constituting a display device are all formed on a fabrication substrate. Even when manufacturing a high-definition display device, a flexible substrate is required to have a high position. Therefore, a flexible substrate can be easily attached. do.

[0320] [Variations] In the manufacturing method example 2 (FIG. 10(D)), the adhesive layer 99 is formed between the metal oxide layer 20 and the insulating layer 31. and the area where the metal oxide layer 92 and the insulating layer 95 are in contact with each other. The cases where it can be provided are shown below.

[0321] The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31, and the adhesion between the metal oxide layer 92 and the insulating layer 95 The adhesion (adhesion) of the metal oxide layer 20 and the resin layer 23 is respectively The adhesion (bonding) between the metal oxide layer 92 and the resin layer 93 is also higher.

[0322] Peeling occurs at the interface between the metal oxide layer 20 and the insulating layer 31 or at the interface between the metal oxide layer 92 and the insulating layer 95 If this is done, peeling yield may decrease, resulting in poor peeling. After forming a frame-shaped separation starting point in the fat layer, only the part that overlaps with the resin layer is separated from the fabricated substrate. The procedure is preferable.

[0323] On the other hand, as shown in FIGS. 15(A) and 15(B), the adhesive layer 99 is formed between the metal oxide layer 20 and the insulating layer 3 The portion where the metal oxide layer 92 and the insulating layer 95 are in contact with each other is not overlapped. It is possible to have a configuration in which this is not the case.

[0324] For example, if an adhesive or adhesive sheet with low fluidity is used for the adhesive layer 99, It is easy to form the insulating film 9 in an island shape (FIG. 15(A)).

[0325] Alternatively, a frame-shaped partition wall 96 is formed, and an adhesive layer 99 is filled and hardened inside the partition wall 96. (FIG. 15(B)).

[0326] When the partition 96 is used as a component of the display device, the partition 96 is made of a hardened resin. At this time, it is preferable that the partition wall 96 is also formed so that the metal oxide layer 20 and the insulating layer 31 are in contact with each other. It is preferable that the metal oxide layer 92 and the insulating layer 95 do not overlap each other. stomach.

[0327] When the partition wall 96 is not used as a component of a display device, the partition wall 96 is not cured or semi-cured. In this case, the partition wall 96 is preferably made of the metal oxide layer 20 and the insulating layer 31. and the metal oxide layer 92 and the insulating layer 95 contact each other, or You can overlap both.

[0328] In this embodiment, the partition walls 96 are made of uncured resin, and the partition walls 96 are insulated from the metal oxide layer 20. The portion where the metal oxide layer 92 and the insulating layer 95 are in contact with each other is also called the insulating layer 95. Here is an example where they do not overlap.

[0329] The adhesive layer 99 is formed on the portion where the metal oxide layer 20 and the insulating layer 31 are in contact with each other, and on the metal oxide layer 9 Regarding a method for forming the starting point of separation in a configuration where the contact portion between the insulating layer 95 and the insulating layer 95 does not overlap, In the following, an example of peeling off the production substrate 91 will be described. A similar method can be used in this case.

[0330] 16(A) to 16(E), the laser beam 66 is used to separate the fabrication substrate 91 and the resin layer 93. The irradiation position will be described.

[0331] As shown in FIG. 16(A), at least one portion of the region where the resin layer 93 and the adhesive layer 99 overlap is By irradiating the laser beam 66 onto the surface, a starting point for separation can be formed.

[0332] It is preferable that the force separating the fabrication substrate 91 and the resin layer 93 is concentrated at the starting point of separation. It is preferable to form the separation starting point near the edge of the adhesive layer 99 rather than the center. Among the vicinity, it is preferable to form the separation starting point near the corners rather than near the sides.

[0333] 16(B) to 16(E) show an example of the laser light irradiation area 67. FIG.

[0334] In FIG. 16(B), one corner of the adhesive layer 99 is shown as an irradiated area 67 of laser light.

[0335] By irradiating the laser beam continuously or intermittently, the starting point of separation in the form of a solid line or a broken line can be formed. In FIG. 16(C), three corners of the adhesive layer 99 are irradiated with laser light. In FIG. 16(D), the laser beam irradiation area 67 is located on one side of the adhesive layer 99. 16(E) shows an example in which the adhesive layer 99 is in contact with the substrate 10 and extends along one side of the adhesive layer 99. The laser beam irradiation area 67 is not only the area where the adhesive layer 99 and the resin layer 93 overlap, but also the area in the cured state. The partition wall 96 may be located in an area where the partition wall 96 and the resin layer 93 overlap each other.

[0336] Thereafter, the fabrication substrate 91 and the resin layer 93 can be separated. A part of the partition wall 96 may remain. The partition wall 96 may be removed, or may be left as is and used for the next step. You may proceed to the process.

[0337] [Display device configuration example 2] 17(A) is a top view of the display device 10B. FIG. 17(B) is a front view of the display device 10B. 3A and 3B are cross-sectional views of a display unit 381 and a connection portion with an FPC 372, respectively.

[0338] The display device 10B can be fabricated using the above-described fabrication method example 2. It is possible to hold the bent state and to bend repeatedly.

[0339] The display device 10B has a substrate 22 and a substrate 29. The substrate 22 side is the display side of the display device 10B. The display device 10B includes a display unit 381 and a drive circuit unit 382. FPC372 is attached to 10B.

[0340] It is preferable to use a film for the substrate 22 and the substrate 29, and in particular, a resin film. This makes it possible to reduce the weight and thickness of the display device. Display devices using plates are less likely to break than those using glass or metal. The flexibility of the display device can be increased.

[0341] The conductive layer 86c and the FPC 372 are electrically connected via the connector 76 (FIG. 17 (B) The conductive layer 86c is made of the same material and the same as the source and drain of the transistor. It can be formed in a process.

[0342] [Example of laminate manufacturing equipment] Next, an example of a laminate manufacturing apparatus will be described with reference to Fig. 18. Manufacturing of the laminate shown in Fig. 18 The device peels a layer to be peeled off from a formation substrate by using the peeling method of this embodiment mode, and separates the layer to be peeled off. The stack manufacturing apparatus shown in FIG. A laminate for a display device or the like can be produced.

[0343] The laminate manufacturing apparatus shown in FIG. 18 includes a plurality of conveying rollers (conveying rollers 643, 644, 64 5, etc.), tape reel 602, take-up reel 683, direction change roller 604, and pressure It has a roller 606.

[0344] The tape reel 602 can unwind the support 601 in the form of a roll sheet. The speed at which 601 is unwound is preferably variable. For example, the speed can be set relatively slow. This can prevent poor peeling of the laminate or the occurrence of cracks in the peeled members.

[0345] The take-up reel 683 can take up the laminate 59 .

[0346] The tape reel 602 and the take-up reel 683 are used to apply tension to the support 601. This can be done.

[0347] The support 601 is fed continuously or intermittently. This is preferable because peeling can be performed at a uniform speed and with a uniform force. It is preferable that the peeling proceeds continuously without stopping midway, and that the peeling proceeds at a constant speed. It is more preferable to stop the peeling process midway and then start peeling again from that region. Unlike when the peeling progresses continuously, strain is applied to the area. Changes in the microstructure or characteristics of electronic devices in the area may occur, for example, display In devices, the effects may appear on the display.

[0348] The support 601 is a roll sheet made of organic resin, metal, alloy, glass, or the like. A film can be used.

[0349] In FIG. 18, a support 601 is provided with a device to be fabricated (e.g., a flexible device) such as a flexible substrate. The support 601 is made of a material such as a carrier tape. For example, the component may be a component that does not constitute the device to be manufactured.

[0350] The plurality of conveying rollers can convey the laminate 56. The mechanism is not limited to conveying rollers, but a belt conveyor, a conveying robot, or the like may also be used. Alternatively, the stack 56 may be placed on a stage on a transport mechanism.

[0351] The conveying roller 643, the conveying roller 644, or the conveying roller 645 is a conveying roller arranged in a plurality of rows. The feed roller is one of the feed rollers, which is provided at a predetermined interval and feeds the laminate 56 (or one of the surface layers 56b) The conveyor is rotated in the direction of delivery (clockwise direction indicated by the solid arrow). The rollers are each rotated by a drive unit (motor or the like) not shown.

[0352] The direction of the support 601 can be changed by the direction-changing roller 604. In the example, the direction-changing roller 604 is located between the tape reel 602 and the pressure roller 606. Here is an example.

[0353] The support 601 is pressed by the pressure roller 606 and the conveying roller 645 to form the laminate 56 (the remaining 5 6a) can be attached.

[0354] In the configuration of FIG. 18, the support 601 comes into contact with the laminate 56 before reaching the pressure roller 606. Therefore, it is possible to prevent air bubbles from being mixed between the support 601 and the laminate 56. can be suppressed.

[0355] The pressure roller 606 is rotated by a drive unit (motor or the like) not shown. As the 606 rotates, a force is applied to the laminate 56 to peel off the remaining portion 56a. At this time, it is preferable that a starting point of peeling is formed in the laminate 56. The layer 56 starts to peel from the peeling starting point. Then, the layered body 56 is separated into the remaining portion 56a and one surface. It is separated into layers 56b.

[0356] The mechanism for peeling off the remaining portion 56a from the laminate 56 is not limited to the pressing roller 606, but may be a convex surface (convex A structure having a curved surface (or a convex curved surface) can be applied. For example, a cylindrical (including cylindrical, right circular, elliptical, parabolic, etc.), spherical, etc. structures. For example, a roller such as a drum-shaped roller can be used. For example, a cylinder with a curved bottom (a cylinder with a circular bottom or an elliptical bottom) elliptical cylinder, etc.) and cylinders with straight and curved bases (cylinders with semicircular or semielliptical bases) When the structure has a shape of one of these pillars, the convex surface is It corresponds to the curved part of the body.

[0357] The structure may be made of a material such as metal, alloy, organic resin, or rubber. The rubber may have gaps or cavities. Examples of the rubber include natural rubber, urethane rubber, nitrile rubber, Neoprene rubber is one example. When rubber is used, static electricity is generated due to friction or peeling. It is preferable to use materials that are resistant to static electricity or take measures to prevent static electricity. The pressure roller 606 shown in FIG. 18 has a hollow cylinder 606a made of rubber or organic resin and a circular and a cylinder 606b made of a metal or alloy and positioned inside the cylinder 606a.

[0358] The rotation speed of the pressure roller 606 is preferably variable. By controlling the above, the yield of peeling can be further increased.

[0359] The pressure roller 606 and the plurality of conveying rollers are rotatable in at least one direction (for example, up and down, left and right, or The convex surface of the pressure roller 606 and the support surface of the conveying roller may be movable (for example, forward and backward). It is preferable that the distance between the electrodes is variable, since this allows peeling of laminates of various thicknesses.

[0360] There is no particular limitation on the angle at which the pressure roller 606 folds back the support 601. 6 shows an example in which the angle at which the roller 606 folds the support 601 is an obtuse angle.

[0361] The laminate manufacturing apparatus shown in Fig. 18 further includes a roller 617. The roller 617 has a convex The support 601 can be fed from the pressure roller 606 to the take-up reel 683 along the surface. Cut.

[0362] Roller 617 is movable in one or more directions.

[0363] The shaft of the roller 617 moves, and the roller 617 applies tension to the support 601. In other words, the roller 617 can be called a tension roller. The support 601 can be pulled in the changed feeding direction by the pressure roller 606. do.

[0364] By moving the shaft of the roller 617, the roller 617 moves the pressure roller 606 toward the support 601. The folding angle can be controlled.

[0365] The roller 617 turns the support 601 and can change the feeding direction of the support 601. For example, the feeding direction of the support 601 may be changed to the horizontal direction. However, after the support 601 is turned back and the feeding direction of the support 601 is changed, the roller 617 and the winding The direction-changing roller 607 located between the take-up reel 683 further The feeding direction may be changed so that the feeding direction of the support 601 is horizontal.

[0366] The laminate manufacturing apparatus shown in FIG. 18 further includes guide rollers (guide rollers 631 and 632 , 633, etc.), a take-up reel 613, a liquid supply mechanism 659, a drying mechanism 614, and The device has an ionizer (ionizers 639 and 620).

[0367] The laminate manufacturing device has a guide roller that guides the support 601 to the take-up reel 683. The guide roller may be a single roller or a plurality of rollers. Like 32, the guide rollers may be capable of applying tension to the support 601.

[0368] A tape 600 (also called a separate film) is attached to at least one surface of a support 601. In this case, the laminate manufacturing device is attached to one surface of the support 601. It is preferable to have a reel onto which the laminated tape 600 can be wound. In FIG. 18, the take-up reel 613 is positioned between the tape reel 602 and the pressure roller 606. Further, the laminate manufacturing device may have a guide roller 634. The guide roller 634 can guide the tape 600 to the take-up reel 613. do.

[0369] The laminate manufacturing device may have a drying mechanism 614. Since the elements (for example, transistors and thin film integrated circuits) are sensitive to static electricity, the remaining 5 A liquid is supplied to the interface between the surface layer 6a and one of the surface layers 56b, or the liquid is supplied to the interface while the surface layer 6a is peeled off. Furthermore, the presence of liquid in the peeling progress portion reduces the force required for peeling. The liquid supply mechanism 659 is used to supply liquid to the interface while peeling. If the liquid evaporates while remaining attached to the remaining portion 56a, a watermark will be formed. Therefore, it is preferable to remove the liquid immediately after peeling. The remaining portion 56a including the active element is blown to remove the droplets remaining on the remaining portion 56a. This makes it possible to prevent the occurrence of watermarks. A carrier plate 609 may be provided to prevent the body 601 from bending.

[0370] While conveying the support 601 in a direction oblique to the horizontal plane, the support 601 is moved downward along the inclination of the support 601. It is preferable to make an air current flow in the direction so that the droplets fall downward.

[0371] The conveying direction of the support 601 can be perpendicular to the horizontal plane, but The oblique direction makes the support 601 more stable during transportation, and vibration can be suppressed.

[0372] During the process, at locations where static electricity may be generated, a static eliminator included in the laminate manufacturing equipment is used. The static eliminator is not particularly limited, but for example, a corona discharge Ionizers that use an electric current, soft X-rays, ultraviolet rays, or the like can be used.

[0373] For example, an ionizer is provided in the laminate manufacturing device, and air or nitrogen gas is blown from the ionizer. The remaining portion 56a is sprayed with the cleaning agent to eliminate static electricity, thereby reducing the effect of static electricity on the functional elements. In particular, in the step of bonding two members together and the step of separating one member, , it is preferable to use an ionizer in each case.

[0374] For example, an ionizer 639 is used to generate ions near the interface between the remaining portion 56a and one of the surface layers 56b. The laminate 56 is separated into a remaining portion 56a and one surface layer 56b while removing static electricity. It is preferable to do so.

[0375] The laminate manufacturing device has a substrate loading cassette 641 and a substrate unloading cassette 642. For example, the stack 56 may be supplied to a substrate load cassette 641. The substrate load cassette 641 can supply the laminate 56 to a transport mechanism or the like. In addition, one surface layer 56 b can be supplied to a substrate unload cassette 642 .

[0376] In the laminate manufacturing apparatus shown in FIG. 18, a support 601 is attached to the laminate 56, and the support 60 By pulling the support 601, the remaining portion 56a is peeled off from the laminate 56. The body 56 can be automatically separated, shortening the work time and improving the production yield of the product. It can be done.

[0377] The remaining portion 56a separated from the surface layer 56b is attached to the support 671 using an adhesive. As a result, the support 601, the remaining portion 56a, and the support 671 are stacked in this order. A laminate 59 can be produced.

[0378] The tape reel 672 can unwind the support 671 in the form of a roll sheet. The same material as the support 601 can be used for 671 .

[0379] The tape reel 672 and take-up reel 683 are used to apply tension to the support 671. This can be done.

[0380] The laminate manufacturing device includes a guide roller 671 that guides the support 671 to a take-up reel 683. 77, 678, 679.

[0381] The direction of the support 671 can be changed by the direction-changing roller 676 .

[0382] The pressure roller 675 presses the remaining portion 56a and the support 671 that the tape reel 672 unwinds. This allows the adhesive to be bonded to the support 671 while preventing air bubbles from forming between the support 671 and the remaining portion 56a. This can prevent the inclusion of

[0383] A separation tape 670 may be attached to at least one surface of the support 671. The guide roller 674 can wind up the separation tape 670. The tape 670 can be guided to a reel 673 .

[0384] The produced laminate 59 may be wound up or cut into pieces. 6 shows an example in which the take-up reel 683 winds up the laminate 59. In addition, a guide roller for guiding the laminate 59 to the take-up reel 683 may be provided.

[0385] In the laminate manufacturing apparatus shown in FIG. 18, a pressure roller 606 is used to press the remaining portion 5 from the laminate 56. The remaining portion 56a can be peeled off and transferred to the support 671 using a pressure roller 675. Cut.

[0386] As described above, in the peeling method of the present embodiment, a metal oxide layer and a resin layer are formed on a substrate. The resin layer is laminated and the peelability of the resin layer from the metal oxide layer is controlled by heating. It is low cost because it does not require expensive equipment such as irradiation of metal. By providing a portion on the oxide layer where the resin layer contacts and a portion where the insulating layer contacts, it is possible to obtain a desired thickness. By this peeling, the resin layer can be peeled off from the substrate. By using this separation method, display devices and the like can be manufactured at low cost and with high mass productivity.

[0387] This embodiment mode can be combined with other embodiment modes as appropriate. In the case where multiple configuration examples are shown in one embodiment, the configuration examples may be combined as appropriate. It is possible to do this.

[0388] (Embodiment 2) In this embodiment, a manufacturing method of a display device according to one embodiment of the present invention will be described with reference to FIGS. I will explain.

[0389] In this embodiment, a channel formation region of a transistor is formed using low-temperature polysilicon (LTPS). The case where the following is used will be explained.

[0390] When LTPS is used, the resin layer is preferably formed using a highly heat-resistant material. Furthermore, it is preferable that the resin layer is formed as a thick film, which allows for high-temperature processing. Furthermore, damage during the laser crystallization process can be reduced.

[0391] First, a metal oxide layer 20 is formed on a substrate 14 (FIG. 19(A)). The material and forming method of 20 can be referred to in embodiment 1.

[0392] Next, a first layer 24 is formed on the metal oxide layer 20 (FIG. 19(B)).

[0393] The material and forming method of the first layer 24 can be referred to in the first embodiment. In this embodiment, the material of the first layer 24 preferably has sufficiently high heat resistance.

[0394] Next, the first layer 24 having the desired shape is subjected to a heat treatment to form the resin layer 23. (FIG. 19(C)). Here, island-shaped resin layers 23 are formed.

[0395] Regarding the conditions of the heat treatment, reference can be made to Embodiment Mode 1.

[0396] In this embodiment, a highly heat-resistant material is used for the first layer 24. A resin layer 23 can be formed.

[0397] In this embodiment, a highly heat-resistant material is used for the first layer 24. The heat treatment can be performed at a temperature higher than the heating temperature shown in . For example, The temperature is preferably 400°C or higher and 600°C or lower, and more preferably 450°C or higher and 550°C or lower. stomach.

[0398] The thickness of the resin layer 23 is preferably 10 μm or more and 200 μm or less, and It is more preferable that the thickness is 100 μm or less, and even more preferable that the thickness is 10 μm or more and 50 μm or less. It is preferable that the resin layer 23 is thick enough to reduce damage during the laser crystallization process. In addition, the rigidity of the display device can be increased.

[0399] The 5% weight loss temperature of the resin layer 23 is preferably 400°C or higher and 600°C or lower, and more preferably 450°C or higher. The temperature is more preferably 600°C or lower, and even more preferably 500°C or higher and 600°C or lower.

[0400] Next, an insulating layer 31 is formed on the fabrication substrate 14 and the resin layer 23 (FIG. 19(D)).

[0401] The insulating layer 31 is formed at a temperature equal to or lower than the heat resistance temperature of the resin layer 23. It is preferable to form the film at a temperature lower than the temperature.

[0402] The insulating layer 31 prevents impurities contained in the resin layer 23 from being transferred to transistors and display elements to be formed later. For example, the insulating layer 31 can be a resin layer. When the resin layer 23 is heated, moisture contained in the resin layer 23 diffuses into the transistors and display elements. Therefore, it is preferable that the insulating layer 31 has high barrier properties.

[0403] The insulating layer 31 can be made of the materials exemplified in the first embodiment.

[0404] Next, a transistor 140 is formed on the insulating layer 31 (FIG. 19(E), FIG. 20(A) to FIG. 20(B)). Figure 20(E)).

[0405] Here, the transistor 140 is a top gate transistor having an LTPS channel formation region. This shows the case where a transistor with a gate structure is fabricated.

[0406] First, a semiconductor film is formed on the insulating layer 31 by using a sputtering method, a CVD method, or the like. In this embodiment, a plasma CVD apparatus is used to form an amorphous silicon film having a thickness of 50 nm. A silicon film 161 is formed.

[0407] Next, it is preferable to perform a heat treatment on the amorphous silicon film 161. Specifically, hydrogen can be desorbed from the amorphous silicon film 161 at a temperature of 400° C. or higher. It is preferable to heat the amorphous silicon film 161 at a temperature of 550° C. or less. By keeping the amount of hydrogen below 5 atom%, it is possible to increase the manufacturing yield in the crystallization process. If the amount of hydrogen contained in the amorphous silicon film 161 is low, the heat treatment can be omitted. good.

[0408] In this embodiment, since the resin layer 23 has high heat resistance, the amorphous silicon film 161 can be heated at a high temperature. This allows the hydrogen in the amorphous silicon film 161 to be sufficiently desorbed and the amorphous silicon film 161 to be fused. This can increase the production yield in the crystallization process.

[0409] Next, the semiconductor film is crystallized to form a semiconductor film 162 having a crystalline structure (see FIG. 20(A)).

[0410] The semiconductor film can be crystallized by irradiating it with laser light from above. The laser light may be, for example, 193 nm, 248 nm, 308 nm, or 351 nm wavelength. Alternatively, a metal catalyst element may be used to crystallize the semiconductor film. good.

[0411] In this embodiment, the resin layer 23 has high heat resistance and is formed as a thick film. Damage caused during crystallization can be reduced.

[0412] Next, the semiconductor film 162 having a crystalline structure may be channel doped.

[0413] Next, the semiconductor film 162 having a crystalline structure is processed to form an island-shaped semiconductor film.

[0414] The semiconductor film is processed by either wet etching or dry etching. Either or both can be used.

[0415] Next, an insulating layer 163 and a conductive layer 164 are formed over the insulating layer 31 and the semiconductor film. The insulating layer 163 and the conductive layer 64 can be made of an inorganic insulating material that can be used for the insulating layer 31. The conductive layer 164 is formed by depositing an insulating film that will become the insulating layer 163 and a conductive film that will become the conductive layer 164. A mask is formed, and the insulating film and the conductive film are etched, and then the mask is removed. It can be formed by:

[0416] By adding an impurity element to a part of the semiconductor film, the channel region 162a and the low resistance region 1 62b (which can also be called a source region and a drain region) is formed. Impurity elements are added multiple times. By performing light doping and heavy doping, the channel region 162a and the low resistance region A LDD (Lightly Doped Drain) region may be formed between 162b. The insulating layer 163 and the conductive layer 164, as well as the masks used to form them, are It can function as a mask when doping impurity elements.

[0417] When manufacturing an n-channel transistor, the impurity element is an n-type conductive material. Impurities that give electrical conductivity are used. For example, elements such as P, As, Sb, S, Te, and Se are used. You can be there.

[0418] When a p-channel transistor is manufactured, the impurity element is a p-type conductive material. Impurities that impart conductivity are used. For example, elements such as B, Al, and Ga can be used. .

[0419] Next, an insulating layer 165 is formed to cover the semiconductor layer, the insulating layer 163, and the conductive layer 164 (FIG. 2). 0(C)). The insulating layer 165 can be formed by the same method as the insulating layer 31.

[0420] Next, a heat treatment is performed, which activates the impurities added to the semiconductor film. The heat treatment is preferably carried out after the insulating layer 165 is formed in order to prevent oxidation of the conductive layer 164. It's nice.

[0421] In this embodiment, since the resin layer 23 has high heat resistance, the heat treatment for activating the impurities is not required. This can be done at high temperatures, which can improve the transistor characteristics.

[0422] Next, an insulating layer 166 is formed on the insulating layer 165 (FIG. 20(D)). It can be formed by the same method as the edge layer 31, and in particular, an insulating film containing hydrogen is formed.

[0423] Next, a heat treatment is performed to remove hydrogen from the insulating layer 166 into the semiconductor film (especially, the carbon monoxide). Hydrogen can be supplied to the semiconductor film (in the panel region 162a) and defects in the semiconductor film can be terminated with hydrogen. The heat treatment is preferably performed after the insulating layer 166 containing hydrogen is formed. The heat treatment is performed on the amorphous silicon film 161 to remove hydrogen. It is also carried out at a low temperature.

[0424] In this embodiment, since the resin layer 23 has high heat resistance, the heat treatment for hydrogenation is performed at a high temperature. This can improve the characteristics of the transistor.

[0425] Next, openings are formed in the insulating layer 165 and the insulating layer 166, reaching the low resistance region 162b of the semiconductor layer. Form.

[0426] Subsequently, the conductive layer 167a and the conductive layer 167b are formed. 7b is a diagram showing a method for forming a conductive film, forming a resist mask, and etching the conductive film. The conductive layer 167a and the conductive layer 167b can be formed by removing the resist mask. are electrically connected to the low resistance region 162b through the openings in the insulating layer 165 and the insulating layer 166, respectively. are connected to the network.

[0427] In this manner, the transistor 140 can be manufactured (FIG. 20E). In 40, a portion of the conductive layer 164 functions as a gate, and a portion of the insulating layer 163 functions as a gate. The semiconductor layer functions as an insulating layer. The semiconductor layer has a channel region 162a and a low resistance region 162b. The channel region 162a overlaps with the conductive layer 164 via the insulating layer 163. 62b has a portion connected to the conductive layer 167a and a portion connected to the conductive layer 167b. do.

[0428] Next, the insulating layer 34 to the protective layer 75 are formed on the insulating layer 166 (FIG. 21(A)). For these steps, refer to Embodiment 1.

[0429] Next, separation starting points are formed in the resin layer 23 (FIGS. 21(B1) and 21(B2)). For the formation method, refer to the first embodiment.

[0430] When forming a plurality of display devices from one fabrication substrate (multiple panels), one resin layer 23 can be used to form a plurality of display devices. For example, A plurality of display devices are arranged inside the eye 64. This allows the plurality of display devices to be displayed at once. The substrate can be separated from the substrate by fastening the substrate.

[0431] Alternatively, a plurality of resin layers 23 may be used, with different resin layers 23 being formed for different display devices. 21(B3) shows an example in which four resin layers 23 are formed on the fabrication substrate. 23 By making a frame-shaped cut 64 in each, each display device can be created at a different timing. The substrate can be separated.

[0432] In this embodiment, the metal oxide layer 20 is provided with a portion where the resin layer 23 is in contact and a portion where the insulating layer 31 is in contact. The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31 is determined by the metal oxide. The adhesiveness (bonding) between the metal oxide layer 20 and the resin layer 23 is higher than that between the metal oxide layer 20 and the resin layer 23. This can prevent the oxide layer 20 from unintentionally peeling off. In this way, the metal oxide layer 20 and the resin layer 23 can be separated at a desired timing. Therefore, the timing of separation can be controlled and the force required for separation is small. The yield of the separation process and the manufacturing process of the display device can be increased.

[0433] Next, the metal oxide layer 20 and the resin layer 23 are separated (FIG. 22(A)).

[0434] Then, a substrate 29 is attached to the exposed resin layer 23 using an adhesive layer 28 (FIG. 22 (B)).

[0435] The substrate 29 can function as a support substrate for the display device. It is preferable to use a resin film, and it is particularly preferable to use a resin film. Furthermore, display devices using film substrates can be made lighter and thinner than glass or metal. In addition, the flexibility of the display device can be improved. do.

[0436] As described above, by using a highly heat-resistant material and forming a thick resin layer, A display device to which LTPS is applied can be manufactured.

[0437] [Display device configuration example 3] 23(A) is a top view of the display device 10C. 10A and 10B are cross-sectional views of a display unit 381 of a display device 10C and an example of a cross-sectional view of a connection portion with an FPC 372. do.

[0438] The display device 10C can be held in a bent state and can be repeatedly bent. do.

[0439] The display device 10C has a protective layer 75 and a substrate 29. The protective layer 75 side is the display surface of the display device. The display device 10C includes a display unit 381 and a drive circuit unit 382. FPC372 is attached to 0C.

[0440] The conductive layer 43c and the FPC 372 are electrically connected via the connector 76 (see FIG. 23). (B, (C)). The conductive layer 43c is made of the same material as the source and drain of the transistor. The two layers can be formed in the same process.

[0441] The display device shown in FIG. 23(C) does not have the resin layer 23 and the insulating layer 31, but has the resin layer 23a and the insulating layer 31. The laminated structure includes an edge layer 31a, a resin layer 23b, and an insulating layer 31b. By having this, the reliability of the display device can be improved.

[0442] This embodiment mode can be combined with other embodiment modes as appropriate.

[0443] (Embodiment 3) In this embodiment, a display device and an input / output device which can be manufactured by applying one embodiment of the present invention will be described. The device will be described with reference to FIGS.

[0444] The display device of this embodiment includes a first display element that reflects visible light and a second display element that emits visible light. and a display element.

[0445] The display device of this embodiment has a structure in which light reflected by a first display element and light emitted by a second display element are mixed. The display device has a function to display an image by using either one or both of the above.

[0446] The first display element can be an element that displays by reflecting external light. Since the device does not have a light source (it does not use artificial light sources), it consumes very little power when displaying. It becomes possible to do this.

[0447] The first display element can typically be a reflective liquid crystal element. As a display element, a shutter-type MEMS (Micro Electro Mechanical Systems) MEMS elements, optical interference type MEMS elements, microcapsules method, electrophoresis method, electrowetting method, electronic liquid powder (registered trademark) method, etc. Applied elements and the like can be used.

[0448] It is preferable to use a light-emitting element as the second display element. The brightness and chromaticity of light are not affected by external light, so color reproducibility is high (the color gamut is wide). ), it can provide a high-contrast, vivid display.

[0449] The second display element may be, for example, an OLED (Organic Light Emitting Diode), LED(Light Emitting Diode), QLED(Q Self-luminous, such as a uantum-dot Light Emitting Diode A light emitting element can be used.

[0450] The display device of the present embodiment has a first mode in which an image is displayed using only the first display element, a second mode in which an image is displayed using only the second display element; and a second mode in which an image is displayed using only the first display element and the A third mode for displaying an image using a second display element, and these modes can be switched automatically or can be manually switched on and used.

[0451] In the first mode, an image is displayed using the first display element and external light. For example, if the display device is exposed to sufficient external light, When light is incident on the first display element (such as in a bright environment), the first display element uses the reflected light to display an image. For example, if the external light is sufficiently strong and is white light or light close to white light, The first mode is suitable for displaying characters. The first mode uses reflected external light, making it possible to display images that are gentle on the eyes. This has the effect of reducing eye fatigue.

[0452] In the second mode, an image is displayed using light emitted by the second display element. Extremely vivid (high contrast and excellent color reproduction) regardless of brightness or the chromaticity of the ambient light. For example, it is useful when the lighting is extremely low, such as at night or in a dark room. Also, if the surroundings are dark, a bright display may be too bright for the user. To prevent this, it is preferable to display with reduced brightness in the second mode. This not only reduces glare but also power consumption. is a mode suitable for displaying vivid images (still images and moving images).

[0453] In the third mode, both the reflected light from the first display element and the emitted light from the second display element are used. The display is more vivid than the first mode, but less obscured than the second mode. For example, under indoor lighting or in the morning or evening, when the illuminance is low, This is effective when the chromaticity of the external light is not white, or when the chromaticity is relatively low.

[0454] By adopting such a configuration, it is possible to provide a highly visible and convenient display device regardless of the ambient brightness. Specifically, it is possible to realize a display device that is highly visible and convenient both in outdoor light and indoors. This makes it possible to achieve this position.

[0455] The third mode can be said to be a mode that uses a hybrid display method.

[0456] The display device and the input / output device of this embodiment mode are also called hybrid displays. This can be done.

[0457] Hybrid display is a method of displaying images by combining reflected light and self-luminous light on a single panel to achieve different color tones or is a method of displaying characters and / or images by complementing each other in light intensity. Hybrid display is a method in which multiple display elements are used in the same pixel or the same subpixel. It is a method of displaying characters and / or images using light. However, hybrid display is also available. When we look locally at the hybrid display we are working on, we see that one of the multiple display elements is a pixel or subpixel displayed using a plurality of display elements; and a pixel displayed using two or more of a plurality of display elements. Alternatively, the pixel may have a sub-pixel.

[0458] In this specification, the term "a device that satisfies one or more of the above-mentioned expressions" is used. This is called a hybrid display.

[0459] A hybrid display has multiple display elements in the same pixel or subpixel. The plurality of display elements may include, for example, reflective elements that reflect light and transparent elements that emit light. The reflective element and the self-luminous element are controlled independently. The hybrid display uses both reflective and self-luminous light in the display area. It has the function of displaying text and / or images using either or both.

[0460] The display device of this embodiment mode includes a first pixel having a first display element and a second pixel having a second display element. The first pixel and the second pixel each have a matrix. It is preferable that the electrodes are arranged in a box shape.

[0461] The first pixel and the second pixel may each have one or more sub-pixels. For example, a pixel can have one sub-pixel (such as white (W)), or three sub-pixels. The configuration (three colors of red (R), green (G), and blue (B), or yellow (Y), shear (C), and magenta (M), or a structure having four sub-pixels (red ( Four colors: red (R), green (G), blue (B), and white (W), or red (R), green (G), Blue (B), yellow (Y), and four other colors can be applied.

[0462] The display device of this embodiment performs full color display using either the first pixel or the second pixel. Alternatively, the display device of this embodiment mode may have a black and white display in the first pixel. The first pixel displays a color or grayscale image, and the second pixel displays a full color image. The black and white or grayscale display using the first pixel can be It is suitable for displaying information that does not require color display, such as

[0463] 24 is a perspective schematic diagram of a display device 300A. The display device 300A includes a substrate 351 and a substrate In FIG. 24, the substrate 361 is shown by a broken line. do.

[0464] The display device 300A includes a display unit 362, a circuit 364, wiring 365, etc. 3 shows an example in which an IC (integrated circuit) 373 and an FPC 372 are mounted on a display device 300A. Therefore, the configuration shown in FIG. 24 is a display device having a display device 300A, an IC, and an FPC. It can also be called a display module.

[0465] The circuit 364 can be, for example, a scanning line driver circuit.

[0466] The wiring 365 has a function of supplying signals and power to the display portion 362 and the circuit 364. The signals and power are transmitted from the outside via the FPC 372 or from the IC 373 to the wiring 365. is entered.

[0467] In Figure 24, COG (Chip On Glass) or COF (Chip on This shows an example in which an IC 373 is mounted on a substrate 351 by a film method or the like. 73 can be an IC having a scanning line driving circuit or a signal line driving circuit, for example. The display device 300A and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF method or the like.

[0468] 24 shows an enlarged view of a part of the display unit 362. The display unit 362 has a plurality of displays. The electrodes 311b of the element are arranged in a matrix. It has a reflective function and functions as a reflective electrode for the liquid crystal element 180 .

[0469] 24, the electrode 311b has an opening 451. Furthermore, the display unit 362 The light emitting element 170 is located closer to the substrate 351 than the electrode 311b. The light is emitted to the substrate 361 side through the opening 451 of the electrode 311b. The area of ​​the light emitting region and the area of ​​the opening 451 may be equal. If one of the product and the area of ​​the opening 451 is larger than the other, the margin for misalignment is large. In particular, the area of ​​the opening 451 is preferably larger than the area of ​​the light emitting region of the light emitting element 170. If the opening 451 is small, some of the light from the light emitting element 170 will be The opening 451 is blocked by the electrode 311b and may not be able to be taken out. By reducing the light emission, it is possible to prevent the light emitted by the light emitting element 170 from being wasted.

[0470] FIG. 25 shows a part of the area including the FPC 372, the circuit 3, and the display device 300A shown in FIG. 64 and a part of the area including the display unit 362 are cut away. An example of a surface is shown below.

[0471] The display device 300A shown in FIG. 25 includes a transistor 201 between a substrate 351 and a substrate 361. , transistor 203, transistor 205, transistor 206, liquid crystal element 180, The optical element 170, the insulating layer 220, the colored layer 131, the colored layer 134, etc. are included. The edge layer 220 is bonded via an adhesive layer 141. The substrate 351 and the insulating layer 220 are bonded via an adhesive layer 141. It is glued via 142.

[0472] The substrate 361 is provided with a colored layer 131, a light-shielding layer 132, an insulating layer 121, and a liquid crystal element 180. An electrode 113 that functions as a current-carrying electrode, an alignment film 133b, an insulating layer 117, and the like are provided. The outer surface of the substrate 361 has a polarizer 135. The insulating layer 121 acts as a planarizing layer. The insulating layer 121 can make the surface of the electrode 113 approximately flat, Therefore, the alignment state of the liquid crystal layer 112 can be made uniform. It functions as a spacer to hold the cap. When the insulating layer 117 transmits visible light, Alternatively, the insulating layer 117 may be disposed so as to overlap the display area of ​​the liquid crystal element 180 .

[0473] The liquid crystal element 180 is a reflective liquid crystal element. The liquid crystal element 180 functions as a pixel electrode. The electrode 311a, the liquid crystal layer 112, and the electrode 113 are stacked together to form a laminated structure. An electrode 311b that reflects visible light is provided in contact with the substrate 351 side of the electrode 311. b has an opening 451. The electrode 311a and the electrode 113 transmit visible light. An alignment film 133a is provided between the liquid crystal layer 112 and the electrode 311a. An alignment film 133b is provided between them.

[0474] In the liquid crystal element 180, the electrode 311b has a function of reflecting visible light, and the electrode 113 has a function of reflecting visible light. The light incident from the substrate 361 side is polarized by the polarizing plate 135. The light is then transmitted through the electrode 113 and the liquid crystal layer 112, and reflected by the electrode 311b. 2 and electrode 113 again and reaches the polarizing plate 135. The orientation of the liquid crystal can be controlled by applying a voltage between the electrodes 113, thereby controlling the optical modulation of light. That is, the intensity of the light emitted through the polarizing plate 135 can be controlled. In addition, light outside a specific wavelength range is absorbed by the colored layer 131, and thus the light can be extracted. The emitted light is, for example, red light.

[0475] As shown in FIG. 25, the opening 451 is provided with an electrode 311a that transmits visible light. This is preferable. In the region overlapping with the opening 451, the same as in the other region, Since the liquid crystal layer 112 is oriented, poor alignment of the liquid crystal occurs at the boundary between these regions, resulting in unintended This can prevent the leakage of bright light.

[0476] At the connection portion 207, the electrode 311b is connected to the transistor 206 via the conductive layer 221b. The transistor 206 is electrically connected to the conductive layer 222a of the liquid crystal element 1. It has the function of controlling the drive of 80.

[0477] A connecting portion 252 is provided in a portion of the area where the adhesive layer 141 is provided. 2, a conductive layer obtained by processing the same conductive film as the electrode 311a and one of the electrodes 113 The part is electrically connected by the connector 243. A signal or a voltage is input to the electrode 113 from the FPC 372 connected to the substrate 351 side. The voltage can be supplied via connection 252.

[0478] The connectors 243 may be, for example, conductive particles. The surface of particles such as organic resin or silica coated with a metal material can be used. It is preferable to use nickel or gold as the metal material, as this can reduce the contact resistance. It uses particles coated with layers of two or more metal materials, such as nickel coated with gold. It is preferable that the connector 243 is made of a material that undergoes elastic or plastic deformation. In this case, the connectors 243, which are conductive particles, are preferably arranged as shown in FIG. In this way, the connector 243 and the electrical This increases the contact area with the conductive layer that is directly connected, reducing contact resistance and preventing connection failures. The occurrence of defects can be suppressed.

[0479] The connector 243 is preferably disposed so as to be covered with the adhesive layer 141. For example, before hardening, The connectors 243 may be dispersed in the adhesive layer 141.

[0480] The light emitting element 170 is a bottom emission type light emitting element. From the 220 side, an electrode 191 functioning as a pixel electrode, an EL layer 192, and a layer functioning as a common electrode are provided. The electrode 191 is provided on an insulating layer 214 and the electrode 193 is provided on the insulating layer 214. The conductive layer 222a of the transistor 205 is connected through the opening. The transistor 205 has a function of controlling the driving of the light-emitting element 170. The electrode 193 covers the end of the electrode 191. The electrode 193 includes a material that reflects visible light. The electrode 193 includes a material that transmits visible light. An insulating layer 194 is provided to cover the electrode 193. The light emitted by the optical element 170 passes through the colored layer 134, the insulating layer 220, the opening 451, the electrode 311a, etc. and is emitted to the substrate 361 side through the

[0481] The liquid crystal element 180 and the light emitting element 170 can display various colors by changing the color of the colored layer depending on the pixel. The display device 300A can display colors using the liquid crystal element 180. The display device 300A can perform color display using the light emitting element 170. This can be done.

[0482] Transistor 201, transistor 203, transistor 205, and transistor 20 6 are all formed on the surface of the insulating layer 220 on the substrate 351 side. The star can be fabricated using the same process.

[0483] The circuit electrically connected to the liquid crystal element 180 is the circuit electrically connected to the light emitting element 170. It is preferable that the two circuits are formed on the same surface. This eliminates the need to form the two circuits on different surfaces. The thickness of the display device can be made thinner than when two transistors are used. Because it can be fabricated using the same process, it is possible to fabricate two transistors on different surfaces. This can simplify the manufacturing process.

[0484] The pixel electrode of the liquid crystal element 180 is connected to the light emitting element 1 with a gate insulating layer of the transistor sandwiched therebetween. It is located opposite to the pixel electrode 70 .

[0485] Here, a transistor 20 having a metal oxide in a channel formation region and an extremely low off-state current 6 or a memory element electrically connected to the transistor 206. In the case of a liquid crystal display device, when a still image is displayed using the liquid crystal element 180, the writing operation to the pixel is stopped. In other words, it is possible to maintain the gradation even when the frame rate is extremely low. In one aspect of the present invention, the frame rate can be made extremely small. Therefore, driving with low power consumption can be performed.

[0486] The transistor 203 is a transistor (switching The transistor 205 is a light-emitting transistor. This is a transistor (also called a drive transistor) that controls the current flowing through the element 170.

[0487] On the substrate 351 side of the insulating layer 220, there are insulating layers 211, 212, 213, and The insulating layer 211 has a part that is the gate of each transistor. The insulating layer 212 functions as a gate insulating layer. The insulating layer 212 is provided to cover the transistor 206 and the like. The insulating layer 213 is provided to cover the transistor 205 and the like. The number of insulating layers covering the transistor is not limited, and a single layer may be used. There may be one or more layers.

[0488] At least one insulating layer covering each transistor is designed to prevent impurities such as water and hydrogen from diffusing. It is preferable to use a material that can make the insulating layer function as a barrier film. By adopting such a structure, it is possible to prevent impurities from diffusing into the transistor from the outside. This makes it possible to effectively suppress the above-mentioned problems, thereby realizing a highly reliable display device.

[0489] Transistor 201, transistor 203, transistor 205, and transistor 20 6 is a conductive layer 221a functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, , the conductive layer 222a and the conductive layer 222b functioning as a source and a drain, and the semiconductor Here, the same hack is applied to multiple layers obtained by processing the same conductive film. It has a matching pattern.

[0490] The transistors 201 and 205 are connected to the transistors 203 and 205. In addition to the structure of 06, a conductive layer 223 that functions as a gate is provided.

[0491] The transistor 201 and the transistor 205 each have two semiconductor layers in which a channel is formed. By using this structure, the transistor The threshold voltage of the transistor can be controlled by connecting two gates and applying the same signal to them. Such a transistor may be driven by other transistors. It is possible to increase the field effect mobility compared to the conventional photodiode, and increase the on-current. As a result, a circuit capable of high-speed operation can be fabricated. It is possible to reduce the occupied area by applying a transistor with a large on-current. Even if the number of wirings increases when the display device is made larger or higher resolution, This makes it possible to reduce signal delays and suppress display unevenness.

[0492] Alternatively, a potential for controlling the threshold voltage is applied to one of the two gates, and a drive voltage is applied to the other. By applying a potential for the transistor, the threshold voltage of the transistor can be controlled.

[0493] There is no limitation on the structure of the transistors included in the display device. The transistors included in the display portion 362 may have the same structure or different structures. The plurality of transistors included in the circuit 364 may all have the same structure, or may have two types of transistors. The above structures may be used in combination. The transistors may all have the same structure, or two or more types of structures may be used in combination. It may also be used.

[0494] The conductive layer 223 is preferably made of a conductive material containing an oxide. When forming the conductive film, the insulating layer 212 is formed in an oxygen-containing atmosphere. The ratio of oxygen gas in the deposition gas is set to a range of 90% to 100%. The oxygen supplied to the insulating layer 212 is preferably supplied to the semiconductor layer 23 by a subsequent heat treatment. 1, oxygen vacancies in the semiconductor layer 231 can be reduced.

[0495] In particular, it is preferable to use a metal oxide with low resistance for the conductive layer 223. It is preferable to use an insulating film that releases hydrogen, such as a silicon nitride film, for the insulating layer 213. During the formation of the insulating layer 213 or by a subsequent heat treatment, hydrogen is supplied to the conductive layer 223. As a result, the electrical resistance of the conductive layer 223 can be effectively reduced.

[0496] The colored layer 134 is provided in contact with the insulating layer 213. It's covered.

[0497] A connection portion 204 is provided in the area where the substrate 351 and the substrate 361 do not overlap. In the portion 204, the wiring 365 is electrically connected to the FPC 372 via the connection layer 242. The connection part 204 has the same structure as the connection part 207. The conductive layer obtained by processing the same conductive film as the electrode 311a is exposed. The portion 204 and the FPC 372 can be electrically connected via the connection layer 242.

[0498] The polarizing plate 135 disposed on the outer surface of the substrate 361 may be a linear polarizing plate, but a circular polarizing plate may also be used. A circular polarizer can also be used. For example, a linear polarizer and a quarter-wave retarder can be used. This can suppress reflection of external light. In addition, depending on the type of polarizer, the cell gap, orientation, The driving voltage and other factors are adjusted to achieve a desired contrast.

[0499] Various optical members can be arranged on the outside of the substrate 361. Examples of optical members include: Polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), anti-reflection layers, and light-collecting films, etc. The outside of the substrate 361 is provided with an anti-static film to prevent dust from adhering, It is equipped with a water-repellent film that makes it difficult for the surface to be scratched, and a hard coating that prevents scratches from occurring during use. Good too.

[0500] The substrate 351 and the substrate 361 are made of glass, quartz, ceramic, sapphire, or metal. The substrate 351 and the substrate 361 may be made of a flexible material. This can increase the flexibility of the display device.

[0501] The liquid crystal element 180 may be, for example, a vertical alignment (VA) liquid crystal element. A liquid crystal element in which the MV mode is applied can be used. A (Multi-Domain Vertical Alignment) mode, PV A(Patterned Vertical Alignment) mode, ASV(A Advanced Super View mode can be used.

[0502] The liquid crystal element 180 can be a liquid crystal element to which various modes are applied. For example, In addition to the VA mode, there are also TN (Twisted Nematic) and IPS (In- Plane-Switching mode, FFS (Fringe Field Switching) mode tching) mode, ASM(Axially Symmetric aligned) Micro-cell mode, OCB (Optically Compensated) d Birefringence mode, FLC (Ferroelectric Li quid Crystal) mode, AFLC(AntiFerroelectric) mode Liquid Crystal mode, STN (Super Twisted Nem atic mode, TBA (Transverse Bend Alignment) mode Electrically Controlled Birefring (ECB) A liquid crystal element to which a guest-host mode or a guest-host mode is applied can be used.

[0503] A liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystals. The optical modulation effect of liquid crystals is determined by the electric field applied to the liquid crystal (horizontal electric field, vertical electric field or oblique electric field). The liquid crystal used in the liquid crystal element is thermotropic. Low molecular weight liquid crystal, high molecular weight liquid crystal, polymer dispersed liquid crystal (PDLC) Dispersed Liquid Crystal, Polymer Network Liquid Crystal (PN LC: Polymer Network Liquid Crystal), ferroelectric liquid These liquid crystal materials can be used as colloidal liquid crystals depending on the conditions. nematic phase, smectic phase, cubic phase, chiral nematic phase, isotropic phase, etc. .

[0504] The liquid crystal material may be either a positive type liquid crystal or a negative type liquid crystal. The optimum liquid crystal material can be used depending on the mode and design.

[0505] An alignment film can be provided to control the alignment of the liquid crystal. In this case, a liquid crystal that exhibits a blue phase without using an alignment film may be used. When the temperature of cholesteric liquid crystal is increased, the phase immediately transitions from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range, so the temperature range needs to be improved. To achieve this, a liquid crystal composition containing several weight percent or more of a chiral agent is used. A liquid crystal composition containing a liquid crystal exhibiting the above formula and a chiral agent has a short response time and is optically isotropic. Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment, The viewing angle dependency is small. Also, since there is no need to provide an alignment film, rubbing treatment is also unnecessary. Therefore, electrostatic damage caused by the rubbing process can be prevented. This can reduce defects and damage to the liquid crystal display device.

[0506] When a reflective liquid crystal element is used, a polarizing plate 135 is provided on the display surface side. In addition, it is preferable to place a light diffusion plate on the display surface side, since this improves visibility.

[0507] A front light may be provided outside the polarizing plate 135. The front light may be: It is preferable to use an edge-lit front light. The use of a refrigerant is preferable because it reduces power consumption.

[0508] Materials that can be used for light-emitting elements, transistors, insulating layers, conductive layers, adhesive layers, connection layers, etc. For each of the above, please refer to the description in the first embodiment.

[0509] <Application example> In one embodiment of the present invention, a display device equipped with a touch sensor (hereinafter referred to as an input / output device or a touch panel) It is possible to create a fiberglass (also called a fiberglass).

[0510] There is no limitation on the type of detector element (also referred to as a sensor element) included in the input / output device of one embodiment of the present invention. Or various sensors that can detect the proximity or contact of a sensing object such as a stylus. , can be applied as a sensing element.

[0511] For example, the sensor types include capacitance type, resistive film type, surface acoustic wave type, and infrared type. Various methods such as an optical method and a pressure-sensitive method can be used.

[0512] In this embodiment, an input / output device having a capacitance type detection element will be described as an example.

[0513] The capacitance type includes a surface capacitance type, a projected capacitance type, etc. The capacitance type includes the self-capacitance type and the mutual capacitance type. This is preferable because it enables simultaneous multipoint detection.

[0514] In the input / output device of one embodiment of the present invention, a display device and a sensing element that are separately manufactured are attached to each other. The display panel has a pair of substrates, and electrodes constituting the sensing element are provided on one or both of the substrates. Various configurations can be applied, such as a configuration in which

[0515] Below, we will explain about an input / output device that has a configuration in which a display device and a detection element that are separately manufactured are bonded together. 26 and 30 show flow charts of a manufacturing method of a display device of one embodiment of the present invention. FIG. 27 and FIGS. 28(A) and (B) show cross-sectional views of a display device under fabrication. 26. Similarly, FIG. 28(A) corresponds to step S7, FIG. 28(B) corresponds to step S8, B) corresponds to step S8. Also, cross-sectional views of the display device being manufactured are shown in FIGS. FIG. 31 corresponds to step S26 shown in FIG. 30. Similarly, FIG. 32 corresponds to step S26 shown in FIG. Compatible with S27.

[0516] As shown in FIG. 26, first, a metal layer 19 is formed on a fabrication substrate 14 (step S1). Then, the metal layer 19 is oxidized to form a metal oxide layer 20 (step S2). In this case, the metal layer 19 is oxidized by performing H2O plasma treatment to form a metal oxide layer 20. For the method of forming the metal oxide layer 20, reference can be made to the first embodiment.

[0517] Next, a first layer 24 is formed on the metal oxide layer 20 (step S3). The layer 24 is cured to form the resin layer 23 (step S4). The resin layer 23 is formed by applying and baking the resin layer 23. , see embodiment 1.

[0518] Next, transistors and the like are formed on the resin layer 23 (step S5). A light emitting element electrically connected to the photoresist is formed and sealed (step S6). The respective components formed in the above will be described with reference to FIG. 27. See the above description.

[0519] As shown in FIG. 27, a metal oxide layer 20 is formed on the fabrication substrate 14. A resin layer 23 is formed on the insulating layer 115. The insulating layer 115 preferably has high barrier properties. On the insulating layer 115, an electrode 311a, an electrode 311b, and an electrode 311c are provided. The electrodes 311a and 311c are stacked in this order. The electrodes 311a and 311c are located outside the end portions and are in contact with each other. A conductive film that transmits light is used. A conductive film that reflects visible light is used for the electrode 311b. The electrode 311b is provided with an opening 451. The opening 451 is a light-emitting region of the light-emitting element 170. An insulating layer 220a is provided on the electrode 311c. A conductive layer 224 is provided on the insulating layer 220b. The conductive layer 224 functions as one electrode of the capacitor. A transistor 203, a transistor 205, and a transistor 206 are provided. The source or drain of the transistor 206 is connected to the electrode 311c at the connection portion 207. The transistor 205 has two gates. The source or drain of the transistor 205 is electrically connected to the conductive layer 22. 8, the transistors are electrically connected to the electrodes 191 of the light emitting elements 170. Covered by edge layer 212, insulating layer 213, insulating layer 214, insulating layer 225, and insulating layer 215. It is preferable that one or more of these insulating layers have high barrier properties. 2 shows an example in which a material with high barrier properties is used for the insulating layer 213 and the insulating layer 225. 3 is provided to cover the ends of the insulating layer 220a, the insulating layer 220b, the insulating layer 212, etc. The edge layer 225 is provided over the edge of the insulating layer 214. The coating film 226 reflects visible light. The coating film 226 reflects a part of the light emitted from the light emitting element 170 and transmits it to the opening 451 side. The lens 227 has a function of transmitting light emitted from the light emitting element 170. The lens 227 overlaps the light-emitting area of ​​the light-emitting element 170. The light-emitting element 170 is The EL layer 192 is painted differently for each sub-pixel. The end of the electrode 191 is covered with an insulating layer 216. An insulating layer 217 is provided between the electrode 191 and the insulating layer 216. The adhesive layer 142 bonds the light emitting element 170 to the substrate 351. They are combined.

[0520] The material of one or both of the insulating layers 214 and 215 has a refractive index of 1.55 or is a material with a refractive index of 1.66 or close to that, acrylic resin, polyimide Resin or the like can be used.

[0521] The coating film 226 can be made of a metal. Specifically, a material containing silver, The coating film 226 can be formed using a material containing silver and palladium, a material containing silver and copper, or the like. do.

[0522] The refractive index of the lens 227 is preferably 1.3 or more and 2.5 or less. The insulating film can be formed using one or both of an inorganic material and an organic material.

[0523] The material of the lens 227 may be, for example, a material containing oxide or sulfide, or a material containing resin. Examples of materials containing oxides or sulfides include cerium oxide. , hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, oxide Titanium, yttrium oxide, zinc oxide, oxides containing indium and tin, indium and gallium Examples of resin-containing materials include oxides containing lithium and zinc, zinc sulfide, etc. resins into which chlorine, bromine or iodine have been introduced, resins into which heavy metal atoms have been introduced, resins into which aromatic rings have been introduced, Resins into which sulfur has been introduced, resins into which sulfur has been introduced, etc. A material containing nanoparticles of a material with a high refractive index can be used for the lens 227. For example, titanium dioxide or zirconium oxide can be used for the nanoparticles.

[0524] Next, the transistors and the like are peeled off from the fabrication substrate 14 and transferred to the substrate 351 side (step S 7) Separation occurs at the interface between the metal oxide layer 20 and the resin layer 23, exposing the resin layer 23. (Figure 28(A)).

[0525] Next, the resin layer 23 is removed to expose the insulating layer 115 (step S8). The insulating layer 115 may be partially or entirely removed to expose the electrode 311a. By leaving the high insulating layer 115, moisture can penetrate into the transistor and the light emitting element 170. This can prevent the occurrence of defects and improve the reliability of the display device. The resin layer 23 is removed (FIG. 28(B)).

[0526] Then, the liquid crystal element 180 is formed (step S9). An alignment film 133a is formed on one surface of the substrate 361. The insulating layer 121, the insulating layer 232, the electrode 113, the insulating layer 117, and the alignment film 133b are formed in this order. FIG. 29 shows an example in which the colored layer 131 does not overlap the light-emitting region of the light-emitting element 170. However, the colored layer 131 may be provided so as to overlap the light-emitting region of the light-emitting element 170. The insulating layer 232 functions as an overcoat. An insulating film with high barrier properties is suitable for the insulating layer 232. The electrode 113 functions as a common electrode for the liquid crystal element 180. The insulating layer 117 The insulating layer 117 functions as a spacer to maintain the cell gap of the electrode 180. Transmits visible light.

[0527] The substrate 351 and the alignment film 133b are arranged so that the liquid crystal layer 112 is sandwiched between the alignment film 133a and the alignment film 133b. The liquid crystal element 180 is formed by bonding the substrate 361 to the liquid crystal element 180. It has an electrode 311 a , an electrode 311 b , an electrode 311 c , a liquid crystal layer 112 , and an electrode 113 .

[0528] Furthermore, a diffusion film 233 and a polarizing plate 135 are attached to the other surface of the substrate 361. Then, a substrate 235 having a touch sensor on one surface is attached to the polarizing plate 135. 29, the adhesive layer is not shown in some places. It is preferable that the surface is anti-reflective. For example, The uneven surface diffuses reflected light and reduces glare. An insulating layer 234c is formed between the conductive layer 234a and the conductive layer 234b of the touch sensor. The conductive layer 234b is covered with an insulating layer 234d.

[0529] In this way, the input / output device 310A shown in Fig. 29 can be formed. Then, an IC or the like is mounted (step S10), and the display can be checked (step S11). ).

[0530] The flow shown in FIG. 26 includes a step of removing the resin layer 23 that has peeled off from the fabrication substrate 14. On the other hand, FIG. 30 shows a flow in which this step is not included.

[0531] As shown in FIG. 30, first, a metal layer 19 is formed on a fabrication substrate 14 (step S21). Then, the metal layer 19 is oxidized to form a metal oxide layer 20 (step S22). Here, the metal layer 19 is oxidized by performing H2O plasma treatment, and the metal oxide layer 20 For the method of forming the metal oxide layer 20, reference can be made to the first embodiment.

[0532] Next, the first layer 24 is formed on the metal oxide layer 20 (step S23). The layer 24 is cured to form the resin layer 23 (step S24). The resin layer 23 is formed by applying the resin 24 and baking it. For details, refer to the first embodiment. Here, the resin layer 23 having the openings is formed. For example, by opening the resin layer 23 at the portion where the conductive layer is to be exposed, after peeling, The conductive layer can be exposed without removing the resin layer 23. If the transmittance of visible light is low, the resin layer 23 should be opened at the portion from which light is extracted. Therefore, after peeling, the resin layer 23 does not need to be removed, and a decrease in light extraction efficiency can be suppressed.

[0533] Next, a transistor or the like is formed on the metal oxide layer 20 and the resin layer 23 (step S 25) Then, a light-emitting element electrically connected to the transistor is formed and sealed (stencil). Each component will be explained using FIG. 31. For details, please refer to the previous description.

[0534] As shown in FIG. 31, a metal oxide layer 20 is formed on the fabrication substrate 14. A resin layer 23 is formed on the resin layer 20. An opening is provided in the resin layer 23. The area where the metal oxide layer 20 and the electrode 311a are in contact with each other is not provided with the metal oxide layer 20. There is a region where the metal oxide layer 20 and the insulating layer 213 are in contact with each other. On the lipid layer 23, an electrode 311a, an electrode 311b, and an electrode 311c are laminated in this order. The ends of the electrodes 311a and 311c are positioned further outward than the end of the electrode 311b. The electrodes 311a and 311c are provided with a conductive film that transmits visible light. For the electrode 311b, a conductive film that reflects visible light is used. The light emitting region of the light emitting element 170 is provided in the portion where the insulating layer 311c is not formed. 220a is provided, and a conductive layer 224 is provided on the insulating layer 220a. An insulating layer 220b is provided on the layer 224. The conductive layer 224 is one of the capacitor elements. The insulating layer 220b functions as an electrode. , and a transistor 206. The source or drain of the transistor 206 The transistor 2 is electrically connected to the electrode 311c at the connection portion 207. 05 has two gates. The two gates are electrically connected. The source or drain of the capacitor 205 is connected to the electrode 19 of the light-emitting element 170 via the conductive layer 228. Each transistor is electrically connected to an insulating layer 212, an insulating layer 213, an insulating layer 214, and an insulating layer 215. 4, insulating layer 225, and insulating layer 215. In FIG. 31, the insulating layer 213 and the insulating layer 225 have a high barrier property. The insulating layer 213 is made of an insulating layer 220a and an insulating layer 220b. The insulating layer 225 is provided to cover the end of the insulating layer 214. The coating film 226 is a film that reflects visible light. The lens 227 has a function of reflecting a part of the light emitted from the element 170 and supplying it to the lower side of the drawing. The lens 227 has a function of transmitting light emitted from the light emitting element 170. The light-emitting element 170 has an electrode 191, an EL layer 192, and an electrode 193. The EL layer 192 is painted differently for each sub-pixel. The insulating layer 217 functions as a spacer. Thus, the light emitting element 170 and the substrate 351 are bonded together.

[0535] Next, the transistors and the like are peeled off from the fabrication substrate 14 and transferred to the substrate 351 side (step S 27) Separation occurs at the interface between the metal oxide layer 20 and the resin layer 23, and the resin layer 23 is exposed. In addition, in the portion where the resin layer 23 is not provided, the metal oxide layer 20 and Separation occurs at the interface with the electrode 311a, exposing the electrode 311a (FIG. 32). Preferably, the electrode 311a is made of a material that has low adhesion to the metal oxide layer 20. In addition, the smaller the contact area between the electrode 311a and the metal oxide layer 20, the easier separation at the interface. It is very preferable.

[0536] Then, the liquid crystal element 180 is formed (step S28). An alignment film 133a is formed on one surface of the substrate 361. 121, an insulating layer 232, an electrode 113, an insulating layer 117, and an alignment film 133b are formed in this order. These configurations are the same as those in FIG. 29, so the explanation will be omitted.

[0537] The substrate 351 and the alignment film 133b are arranged so that the liquid crystal layer 112 is sandwiched between the alignment film 133a and the alignment film 133b. The liquid crystal element 180 is formed by bonding the substrate 361 to the liquid crystal element 180. It has an electrode 311 a , an electrode 311 b , an electrode 311 c , a liquid crystal layer 112 , and an electrode 113 .

[0538] Furthermore, a diffusion film 233 and a polarizing plate 135 are attached to the other surface of the substrate 361. Then, a substrate 235 having a touch sensor on one surface is attached to the polarizing plate 135. These configurations are the same as those in FIG. 29, and therefore the explanation will be omitted.

[0539] In this way, the input / output device 310B shown in Fig. 33 can be formed. Then, an IC or the like is mounted (step S29), and the display can be checked (step S30). ).

[0540] As described above, the display device of this embodiment has two types of display elements and can display a plurality of display modes. It can be used by switching between the two, so it is highly visible and convenient regardless of the ambient brightness. expensive.

[0541] This embodiment mode can be combined with other embodiment modes as appropriate.

[0542] (Fourth embodiment) In this embodiment, a metal that can be used in a transistor disclosed in one embodiment of the present invention is In the following, we will explain about oxides. In particular, we will discuss metal oxides and CAC (Cloud-Aligned Coils). This article explains the details of the ed Composite OS.

[0543] CAC-OS or CAC-metal oxide is a material that has the function of conductivity and A part of the material has an insulating function, and the entire material has a semiconductor function. Note that CAC-OS or CAC-metal oxide is used as the channel of a transistor. When used in a forming region, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the gate and the insulating function work in a complementary manner, the switching function (O CAC-OS or CAC-metal oxide is given the function to turn on / off the In CAC-OS or CAC-metal oxide, By separating these functions, the functionality of both can be maximized.

[0544] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region are formed at the nanoparticle level in the material. The conductive and insulating regions may be separated by a thin film. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0545] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0546] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on state, i.e., a large on-current. Furthermore, high field-effect mobility can be obtained.

[0547] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0548] For example, the CAC-OS has elements that make up the metal oxide, and the elements are 0.5 nm or more and 10 nm or less. Preferably, it is a composition of a material unevenly distributed in a size of 1 nm or more and 2 nm or less, or in the vicinity thereof. In the following, we will discuss the case where one or more metal elements are unevenly distributed in a metal oxide. The region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 The mixed state of particles with sizes of less than 1 nm or close to that size is called a mosaic or patch state. cormorant.

[0549] The metal oxide preferably contains at least indium. It is preferable that the alloy contains zinc. In addition to the zinc, aluminum, gallium, yttrium, Smoke, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium nium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tungsten Contains one or more selected from aluminum, tungsten, magnesium, etc. It may be possible.

[0550] For example, CAC-OS made of In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OS) α-Zn oxide may be specifically referred to as CAC-IGZO. (Hereinafter, InO X1 (X1 is a real number greater than 0) or indium zinc oxide In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (hereinafter referred to as GaO X3 (X3 is a real number greater than 0). ), or gallium zinc oxide (Ga X4 Zn Y4 O Z4(X4, Y4, and Z4 is a real number greater than 0). ) and so on, the material separates into a mosaic shape, Mosaic InO X1 , or In X2 Zn Y2 O Z2 is uniformly distributed in the film (Hereinafter, this will also be referred to as cloud-like.)

[0551] In other words, CAC-OS is X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 A composite metal oxide having a mixed structure with a region in which In this specification, for example, when the atomic ratio of In to the element M in the first region is , the atomic ratio of In to the element M in the second region is greater than the atomic ratio of In in the first region. The concentration of In is higher than in the region

[0552] IGZO is a common name and refers to a compound of In, Ga, Zn, and O. A typical example is InGaO3(ZnO) m1 (m1 is a natural number), or In (1 +x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of such crystalline compounds include:

[0553] The crystalline compounds may have a single crystal structure, a polycrystalline structure, or a c-axis alcove (CAAC) structure. The CAAC structure is a structure in which multiple IGZO The nanocrystals have a c-axis orientation and are connected without orientation in the ab plane. do.

[0554] On the other hand, CAC-OS is a material structure of metal oxide. In the material composition containing Zn and O, nanoparticles mainly composed of Ga were observed in some areas. The regions where the In is the main component and the regions where the In is the main component are observed as nanoparticles are mosaic. Therefore, in CAC-OS, the crystal structure is a secondary element.

[0555] It should be noted that the CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, is not included. do not have.

[0556] In addition, GaO X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 but In some cases, a clear boundary between the main component region and the main component region cannot be observed.

[0557] Instead of gallium, aluminum, yttrium, copper, vanadium, and beryllium can be used. , boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum , lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more selected elements such as sodium are included, CAC-OS will The nanoparticle-like regions are observed in the region where the metal element is the main component, and the region where In is the main component. The nanoparticle-like regions are randomly dispersed in a mosaic pattern. say.

[0558] CAC-OS is formed by sputtering without intentionally heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the deposition gas is The gas to be used is preferably selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. One or more of these may be used. The lower the flow rate ratio of the oxygen gas, the better. For example, the flow rate ratio of the oxygen gas is preferably 0% or more and less than 30%. It is preferable that the content is 0% or more and 10% or less.

[0559] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan by the out-of-plane method, In other words, from the X-ray diffraction, the measurement region It can be seen that no orientation in the ab plane direction or the c axis direction is observed.

[0560] In addition, the CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam). In the electron diffraction pattern obtained by irradiating the Therefore, the electron diffraction pattern indicates that CAC-OS The crystal structure is nc (nano-cr) which has no orientation in the plane direction and cross-sectional direction. It can be seen that it has a crystalline structure.

[0561] For example, in the case of CAC-OS, an In-Ga-Zn oxide, energy dispersive X-ray Energy Dispersive X-ray spectroscopy (EDX) EDX mapping obtained using a copy of the GaO X3 The region where is the principal component and , InX2 Zn Y2 O Z2 , or InO X1 The area where the main component is unevenly distributed and mixed. It can be confirmed that it has the structure shown in the figure.

[0562] CAC-OS has a structure different from that of IGZO compounds, in which metal elements are uniformly distributed. CAC-OS has different properties from ZO compounds. X3 The main ingredients are In a certain area, X2 Zn Y2 O Z2 , or InO X1 The region where is the principal component and The phases are separated into two, and the regions containing each element as the main component are arranged in a mosaic pattern.

[0563] Here, In X2 Zn Y2 O Z2 , or InO X1 The region where is the main component is GaO X3 This region has higher conductivity than the region where In is the main component. X2 Zn Y 2O Z2 , or InO X1 The carriers flow through the region where the main component is oxidized. Therefore, the conductivity of In is expressed as a semiconductor. X2 Zn Y2 O Z2 , or InO X The cloud-like distribution of the region where 1 is the main component in the oxide semiconductor results in a high field effect. Mobility (μ) can be achieved.

[0564] On the other hand, GaO X3 The region where the main components are In X2 Zn Y2 O Z2 , or InO X This region has higher insulating properties than the region where GaO is the main component. X3 etc. The distribution of the main component in the oxide semiconductor suppresses leakage current and provides good switching. Switching operation can be realized.

[0565] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation caused by In X2 Zn Y2 O Z2 , or InO X1 The conductivity caused by the This results in a high on-state current (I on ) and high field-effect mobility (μ). Cut.

[0566] Furthermore, semiconductor devices using CAC-OS are highly reliable. It is ideal for a variety of semiconductor devices, including displays.

[0567] This embodiment mode can be combined with other embodiment modes as appropriate.

[0568] (Embodiment 5) In this embodiment, a display module and an electronic device according to one embodiment of the present invention will be described.

[0569] The display module 8000 shown in FIG. 34(A) includes an upper cover 8001 and a lower cover 800 Between the FPC8005 and the display panel 8006, the frame 8009, and the printer The device has a main board 8010 and a battery 8011.

[0570] For example, a display device manufactured using one embodiment of the present invention can be used for the display panel 8006. This allows the display module to be manufactured with a high yield.

[0571] The upper cover 8001 and the lower cover 8002 are designed to fit the size of the display panel 8006. The shape and dimensions can be changed as appropriate.

[0572] A touch panel may be provided over the display panel 8006. A resistive or capacitive touch panel is used by superimposing it on the display panel 8006. In addition, a touch panel may not be provided, and the display panel 8006 may be provided with a touch panel function. It is also possible to have

[0573] The frame 8009 protects the display panel 8006 and also prevents the operation of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the frame. The frame 8009 may also function as a heat sink.

[0574] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply to the power supply circuit can be an external commercial power supply or Alternatively, the power source may be a separately provided battery 8011. This can be omitted if a commercial power source is used.

[0575] In addition, the Display Module 8000 adds components such as a polarizing plate, a retardation plate, and a prism sheet. It may also be provided as follows.

[0576] FIG. 34(B) is a schematic cross-sectional view of a display module 8000 equipped with an optical touch sensor. be.

[0577] The display module 8000 includes a light-emitting unit 8015 and a light-receiving unit 8016 provided on a printed circuit board 8010. The area surrounded by the upper cover 8001 and the lower cover 8002 has a portion 8016. The light guide portion 8017 has a pair of light guide portions (light guide portion 8017a, light guide portion 8017b) in the region.

[0578] The upper cover 8001 and the lower cover 8002 can be made of, for example, plastic. In addition, the upper cover 8001 and the lower cover 8002 can each be made thin. For example, the thickness of each cover can be set to 0.5 mm or more and 5 mm or less. This allows the display module 8000 to be extremely lightweight. Since the lower cover 8002 and the lower cover 8001 can be manufactured, the manufacturing cost can be reduced.

[0579] The display panel 8006 is connected to a printed circuit board 8010 and a battery via a frame 8009. The display panel 8006 and the frame 8009 are disposed on top of the light guide unit 8 017a and fixed to the light guiding portion 8017b.

[0580] Light 8018 emitted from the light emitting unit 8015 is guided to the display panel 800 by the light guiding unit 8017a. 6, and then reaches the light receiving part 8016 through the light guiding part 8017b. A touch operation is detected when light 8018 is blocked by a detection object such as an illustration. It is possible.

[0581] A plurality of light emitting portions 8015 are provided, for example, along two adjacent sides of the display panel 8006. A plurality of light receiving sections 8016 are provided at positions facing the light emitting sections 8015. It is possible to obtain information about the position where the touch operation was performed.

[0582] The light emitting unit 8015 can use a light source such as an LED element. 015, a light source that emits infrared light that is invisible to the user and harmless to the user It is preferable to use

[0583] The light receiving section 8016 receives the light emitted by the light emitting section 8015 and converts it into an electrical signal. Preferably, a photodiode capable of receiving infrared rays can be used. Cut.

[0584] The light guide portions 8017a and 8017b are made of a material that transmits at least the light 8018. By using the light guiding portion 8017a and the light guiding portion 8017b, the light emitting portion 8 The light receiving unit 8015 and the light receiving unit 8016 can be disposed below the display panel 8006, and external light is received. This can prevent the light from reaching the light unit 8016 and causing the touch sensor to malfunction. It is preferable to use a resin that absorbs infrared rays and transmits infrared rays. This can more effectively suppress the production of

[0585] According to one embodiment of the present invention, an electronic device having a curved surface and high reliability can be manufactured. According to one embodiment, a flexible and highly reliable electronic device can be manufactured.

[0586] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital cameras, digital video cameras Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, sound reproduction Examples include large gaming machines such as pachinko machines.

[0587] Furthermore, the display device of one embodiment of the present invention can achieve high visibility regardless of the intensity of external light. Therefore, portable electronic devices, wearable electronic devices, and It can be suitably used in a child book terminal or the like.

[0588] The mobile information terminal 800 shown in FIGS. 35(A) and 35(B) includes a housing 801, a housing 802, a display unit 8 03, and a hinge portion 805.

[0589] The housing 801 and the housing 802 are connected by a hinge part 805. The mobile information terminal 800 includes: It can be unfolded from the folded state (Fig. 35(A)) as shown in Fig. 35(B). This makes it highly portable when you are carrying it around, and it has a large display area when you are using it. , and has excellent visibility.

[0590] The portable information terminal 800 has a hinge 805 that connects the housing 801 and the housing 802. A flexible display unit 803 is provided.

[0591] A display device manufactured according to one embodiment of the present invention can be used in the display portion 803. This allows the production of portable information terminals with a high yield.

[0592] The display unit 803 can display at least one of document information, still images, and moving images. When document information is displayed on the display unit, the portable information terminal 800 is used as an electronic book terminal. It can be used as follows.

[0593] When the mobile information terminal 800 is unfolded, the display unit 803 is held in a greatly curved state. For example, the radius of curvature is 1 mm or more and 50 mm or less, preferably 5 mm or more and 30 mm or less. The display unit 803 is held by the housing 801. Pixels are arranged continuously from 802 to 803, enabling a curved display.

[0594] The display unit 803 functions as a touch panel and can be operated with a finger or a stylus. can.

[0595] The display unit 803 is preferably configured as a single flexible display. This allows for continuous, uninterrupted display between the housing 801 and the housing 802. It should be noted that the display may be provided on each of the housings 801 and 802. You may do so.

[0596] The hinge portion 805 is a part that connects the housing 801 and the housing 802 when the mobile information terminal 800 is unfolded. It is preferable to have a locking mechanism to prevent the angle from becoming larger than a predetermined angle. For example, the angle at which the door will lock (will not open any further) must be between 90 degrees and 180 degrees. Typically, the angle is 90 degrees, 120 degrees, 135 degrees, 150 degrees, or 17 degrees. 5 degrees, etc. This improves the convenience, safety, and Reliability can be improved.

[0597] If the hinge part 805 has a locking mechanism, the display part 803 can be opened without applying excessive force. Therefore, it is possible to prevent the display unit 803 from being damaged. It can be achieved.

[0598] The housing 801 and the housing 802 are provided with a power button, an operation button, an external connection port, a speaker, a microphone, and the like. It may have a ridge or the like.

[0599] A wireless communication module is provided in either the housing 801 or the housing 802. Internet, LAN (Local Area Network), Wi-Fi (registered trademark) ) and can send and receive data over computer networks.

[0600] The mobile information terminal 810 shown in FIG. 35(C) includes a housing 811, a display unit 812, and operation buttons 81 3, an external connection port 814, a speaker 815, a microphone 816, a camera 817, etc.

[0601] A display device manufactured according to one embodiment of the present invention can be used in the display portion 812. This allows the production of portable information terminals with a high yield.

[0602] The mobile information terminal 810 has a touch sensor on the display unit 812. All operations, such as entering text, can be performed by touching the display 812 with a finger or a stylus. It can be done.

[0603] In addition, by operating the operation button 813, the power can be turned on and off, and the display unit 812 can be displayed. For example, you can change the type of image displayed from the main screen of the email composition screen. You can switch to the menu screen.

[0604] In addition, a detection device such as a gyro sensor or an acceleration sensor is installed inside the mobile information terminal 810. By providing this, the orientation (portrait or landscape) of the mobile information terminal 810 can be determined and the screen of the display unit 812 can be displayed. The display orientation can be automatically switched. The input is made by touching the display 812, operating the operation button 813, or by voice input using the microphone 816. It can also be done by force or the like.

[0605] The mobile information terminal 810 is, for example, one or more devices selected from a telephone, a notebook, an information viewing device, etc. It has multiple functions. Specifically, it can be used as a smartphone. The information terminal 810 can be used for, for example, mobile phone calls, e-mails, viewing and creating documents, playing music, and watching videos. It can run various applications such as playback, internet communication, and games. do.

[0606] The camera 820 shown in FIG. 35(D) includes a housing 821, a display unit 822, an operation button 823, and a shutter. The camera 820 also has a shutter button 824. The camera 820 is equipped with a detachable lens 826. It is attached.

[0607] A display device manufactured according to one embodiment of the present invention can be used in the display portion 822. This allows the camera to be manufactured with a high yield.

[0608] Here, the camera 820 and the lens 826 can be removed from the housing 821 and replaced. However, the lens 826 and the housing 821 may be integrated.

[0609] The camera 820 captures still or moving images by pressing the shutter button 824. The display unit 822 also has a function as a touch panel. You can also take a photo by touching 2.

[0610] The camera 820 can be equipped with a strobe device, a viewfinder, etc. Alternatively, these may be incorporated into the housing 821.

[0611] 36(A) to 36(E) are diagrams showing electronic devices. These electronic devices are provided with a housing 9000. , a display unit 9001, a speaker 9003, operation keys 9005 (power switch or operation switch) including a switch), connection terminal 9006, sensor 9007 (force, displacement, position, speed, acceleration, Angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current , voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared measurement capabilities 9008, etc.

[0612] A display device manufactured using one embodiment of the present invention can be suitably used in the display portion 9001. This allows electronic devices to be manufactured with high yields.

[0613] The electronic devices shown in Figures 36(A) to 36(E) can have various functions. Functions for displaying various information (still images, videos, text images, etc.) on the display, touch panel function Functions such as displaying calendars, dates, or times, and various software (programs) ) to control processing, wireless communication function, and various computer It has the function of connecting to a data network, and the function of transmitting or receiving various data using wireless communication. The function to be performed, read the program or data recorded on the recording medium and display it on the display unit The electronic devices shown in Figures 36(A) to 36(E) can have the following functions. The functions are not limited to these, and other functions may also be included.

[0614] FIG. 36(A) shows a wristwatch-type portable information terminal 9200, and FIG. 36(B) shows a wristwatch-type portable information terminal 9200. 92 is a perspective view showing a terminal 9201.

[0615] The mobile information terminal 9200 shown in FIG. 36(A) is a terminal for mobile phone calls, e-mails, and document browsing and creation. It can be used for various applications such as music playback, internet communication, and computer games. The display surface of the display unit 9001 is curved, and the curved The portable information terminal 9200 can display information on a display surface. For example, a wireless headset can be used with the By communicating with each other, you can talk hands-free. The 9200 has a connection terminal 9006 and can directly exchange data with other information terminals via a connector. It is also possible to charge the battery via the connection terminal 9006. Note that the charging operation may be performed by wireless power supply without using the connection terminal 9006.

[0616] The portable information terminal 9201 shown in FIG. 36(B) is different from the portable information terminal shown in FIG. 36(A). The display surface of the display unit 9001 is not curved. The shape is non-rectangular (circular in FIG. 36(B)).

[0617] 36(C) to 36(E) are perspective views showing a foldable mobile information terminal 9202. 36(C) is a perspective view of the mobile information terminal 9202 in an unfolded state, and FIG. 36(D) is a perspective view of the mobile information terminal 9202 in an unfolded state. The mobile information terminal 9202 changes from one of the unfolded state and the folded state to the other. 36(E) is a perspective view of the portable information terminal 9202 in a folded state. FIG.

[0618] The portable information terminal 9202 is highly portable when folded, and has a seam when unfolded. The display area of ​​the portable information terminal 9202 is wide and has no distortion, making it easy to see the display. 9001 is supported by three housings 9000 connected by hinges 9055. The two housings 9000 are bent via the hinge 9055, thereby forming a portable information terminal 9 202 can be reversibly transformed from an unfolded state to a folded state. The portable information terminal 9202 can be bent with a radius of curvature of 1 mm or more and 150 mm or less.

[0619] This embodiment mode can be combined with other embodiment modes as appropriate. [Example]

[0620] In this example, the results of peeling a resin layer from a fabrication substrate will be described.

[0621] The method for fabricating the sample of this example will be described with reference to Figure 37. In this example, three types of A sample was prepared.

[0622] First, a metal layer 19 was formed on a fabrication substrate 14 (FIG. 37(A)).

[0623] The substrate 14 used was a glass substrate having a thickness of about 0.7 mm. A titanium film with a thickness of about 5 nm was formed by the deposition method.

[0624] Next, the surface of the metal layer 19 is subjected to H2O plasma treatment (Plasma 3 in Figure 37(A)). 0), and a titanium oxide film was formed as the metal oxide layer 20 (FIG. 37(B)).

[0625] The bias power for H2O plasma treatment varies depending on the sample. As the power sources, 2000 W (sample 1A), 3000 W (sample 1B), and 4500 W (sample 1 C) were used. The ICP power was 0 W, the pressure was 15 Pa, the lower electrode temperature was 40 °C, The treatment time was 600 seconds, and water vapor was used as the process gas at a flow rate of 250 sccm. The H2O plasma treatment was carried out at room temperature.

[0626] Next, a first layer 24 was formed on the metal oxide layer 20 (FIG. 37(C)). The photosensitive material was formed using a material containing a polyimide resin precursor. The thickness of the applied film was approximately 2.0 μm.

[0627] Next, the first layer 24 was subjected to a heat treatment to form a resin layer 23 (FIG. 37(D)). The heat treatment was carried out by baking in an air atmosphere at 480° C. for 1 hour.

[0628] Next, a peeled layer 25 was formed on the resin layer 23 (FIG. 37(E)). The separation layer 25 is formed by insulating layer 31 and insulating layer 32 (gate insulating layer of the transistor) shown in FIG. Specifically, a laminated structure was formed on the resin layer 23. A silicon film, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm were used. These films were formed using the plasma CVD method at a substrate temperature of 330°C. It was formed under the conditions.

[0629] Then, a UV peeling tape was attached to the peeled layer 25 (the adhesive layer 75b and (corresponding to board 75a).

[0630] A peeling test was carried out on the sample of this example to peel the resin layer 23 from the fabricated substrate 14. The jig shown in Figure 38 was used for the separation test. The jig shown in Figure 38 has multiple guide rollers. The measuring method is as follows: A tape 151 is attached to a layer 150 including a layer to be peeled off, which has been formed in advance, and the edge is partially peeled off. Next, the substrate 14 is placed so that the tape 151 is hooked on the support roller 153. The tape 151 and the layer 150 including the layer to be peeled are attached to a jig so that they are perpendicular to the substrate 14. Here, the tape 151 is pulled in a direction perpendicular to the substrate 14. (speed 20 mm / min) when peeling the layer 150 including the peeled layer from the production substrate 14. By measuring the pulling force in the vertical direction, the force required for peeling can be measured. During the peeling process, the substrate 14 is guided with the metal oxide layer 20 exposed. The roller 154 runs along the surface of the roller 154. The support roller 153 and the guide roller 1 54 is used to eliminate the influence of friction during the movement of the layer 150 including the peeled layer and the substrate 14. It is rotatably mounted.

[0631] The peel test was carried out using a small tabletop tester (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation. Adhesive tapes and adhesive sheets that comply with the Japanese Industrial Standards (JIS) standard number JIS Z0237 The test method was used. The sample dimensions were 126 mm x 25 mm.

[0632] Before peeling, water was supplied from the edge of the sample (see liquid supply mechanism 21 in FIG. 37(F)).

[0633] The peeling results of the samples are shown in Figures 39(A) to (C). In Figures 39(A) to (C), the solid lines The upper side is the substrate 75a side, and the lower side is the preparation substrate 14 side. This is the result for sample 1A when the bias power of the plasma treatment was 2000 W. The results for sample 1B are shown with a bias power of 3000 W. This is the result for sample 1C at 4500W.

[0634] As shown in FIGS. 39(A) to (C), the resin layer 23 remains on the substrate 75a side, and the substrate 75a is In this example, the metal oxide layer 20 and the resin layer 23 were not left on the side of the metal oxide layer 20. It is believed that separation was possible at the interface with the

[0635] The force required to peel off each sample was approximately 0.24 N for sample 1A, approximately 0.22 N for sample 1B, and The bias power of sample 1C was approximately 0.16 N. This indicates that the bias power of the H2O plasma treatment It was found that the larger the force required for peeling, the smaller the peel force.

[0636] It should be noted that the surface of the metal layer 19 is not subjected to H2O plasma treatment but to O2 plasma treatment. A titanium oxide film may be formed as the metal oxide layer 20. When the test was carried out, peeling was possible in the same manner as in Samples 1A to 1C. The force was approximately 0.21 N.

[0637] In addition, the surface of the metal layer 19 is subjected to plasma treatment using a mixed gas of H2O and Ar. A titanium oxide film may be formed as the metal oxide layer 20. When the test was carried out, peeling was possible in the same manner as in Samples 1A to 1C. The force applied was approximately 0.15N.

[0638] The conditions for plasma processing using a mixture of H2O and Ar gas were bias power of 4500 W, ICP power: 0 W, pressure: 15 Pa, lower electrode temperature: 40°C, treatment time: 600 sec The process gas was water vapor with a flow rate of 125 sccm and argon gas with a flow rate of 125 sccm. The plasma treatment was carried out at room temperature.

[0639] As described above, in this example, a resin film was removed from the fabrication substrate 14 using the peeling method according to one embodiment of the present invention. The fat layer 23 could be peeled off. [Example]

[0640] In this example, the results of peeling a resin layer from a fabrication substrate will be described.

[0641] The method for preparing the samples in this example will be described with reference to Figure 4. In this example, six types of samples were prepared. The material was prepared.

[0642] First, a metal oxide layer 20 was formed on the fabrication substrate 14 (FIG. 4(A1)).

[0643] The substrate 14 used was a glass substrate having a thickness of about 0.7 mm.

[0644] In the sample 2A, a titanium oxide film was formed as the metal oxide layer 20. Specifically, first, A titanium film with a thickness of approximately 5 nm was formed using the sputtering method. A mixed gas of nitrogen and nitrogen (580 NL / min, oxygen concentration 20%) was flowed at 450°C for 1 By baking for 1 hour, a titanium oxide film was formed.

[0645] In Sample 2B, an aluminum oxide film was formed as the metal oxide layer 20. Specifically, First, an aluminum film with a thickness of about 5 nm was formed by sputtering. An aluminum oxide film was formed by baking under the same conditions as Sample 2A.

[0646] In the sample 2C, an indium zinc oxide film was formed as the metal oxide layer 20. Specifically, First, an indium zinc oxide film with a thickness of about 5 nm was formed by sputtering. Thereafter, baking was carried out under the same conditions as for Sample 2A.

[0647] In the sample 2D, a titanium oxide film was formed as the metal oxide layer 20. Specifically, first, A titanium film with a thickness of approximately 5 nm was formed by sputtering. The titanium oxide film was formed by subjecting the surface to H2O plasma treatment. The treatment was carried out at room temperature, with an ICP power of 0 W, a bias power of 4500 W, a pressure of 15 Pa, and a lower The electrode temperature was 40°C, the treatment time was 600 seconds, and the process gas was an acid with a flow rate of 250 sccm. The material used was

[0648] In Sample 2E, an aluminum oxide film was formed as the metal oxide layer 20. Specifically, First, an aluminum film with a thickness of about 5 nm was formed by sputtering. By performing H2O plasma treatment on the surface of the aluminum film, the aluminum oxide film The conditions for the H2O plasma treatment were the same as those for sample 2D.

[0649] In Sample 2F, an indium zinc oxide film was formed as the metal oxide layer 20. Specifically, First, an indium zinc oxide film with a thickness of about 5 nm was formed by sputtering. After that, the surface of the indium zinc oxide film was subjected to H2O plasma treatment. The O plasma treatment conditions were the same as for sample 2D.

[0650] Next, a first layer 24 was formed on the metal oxide layer 20 (FIG. 4(B)). The photosensitive material was formed using a material containing a polyimide resin precursor. The thickness of the coated film was approximately 2.0 μm.

[0651] Next, the first layer 24 was subjected to a heat treatment to form a resin layer 23 (FIG. 4(C)). The heat treatment was carried out by baking in the air at 480° C. for 1 hour.

[0652] Next, a peeled layer 25 was formed on the resin layer 23 (FIG. 4(D)). The layer 25 is made up of the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in FIG. Specifically, a silicon oxide nitride film having a thickness of about 100 nm was formed on the resin layer 23. A silicon film, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm These films were formed in this order using plasma CVD at a substrate temperature of 330°C. It was formed under the conditions.

[0653] Then, a UV peeling tape was attached to the peeled layer 25 (the adhesive layer 75b and the substrate 75b in FIG. 4(D)). (corresponding to plate 75a).

[0654] A peeling test was carried out on the sample of this example to peel the resin layer 23 from the fabricated substrate 14. The release test was carried out under the same conditions as in Example 1.

[0655] Before peeling, water was supplied from the edge of the sample (see liquid supply mechanism 21 in FIG. 4(E)).

[0656] The peeling results of the samples are shown in Figures 40(A) to (F). In Figures 40(A) to (F), the solid lines The upper side is the substrate 75a side, and the lower side is the preparation substrate 14 side. FIG. 40(B) shows the results for Sample 2A, which had a titanium oxide film formed by baking. 40(C) shows the results for Sample 2B, which has an indium zinc oxide film formed thereon. The results of sample 2C where the oxide film was baked are shown in Figure 40(D). The results of sample 2D, which had a titanium oxide film formed on it, are shown in Fig. 40(E). The results are shown for sample 2E, which has an aluminum film formed thereon. This is the result for sample 2F, in which the film was subjected to plasma treatment.

[0657] As shown in FIGS. 40(A) to 40(F), the resin layer 23 remains on the substrate 75a side, and the substrate 75a is The resin layer 23 did not remain on the side of the metal oxide layer 20. The metal oxide layer 20 and the resin layer 23 were separated at the interface. It is believed that this was possible.

[0658] The force required to peel each sample was approximately 0.19 N for sample 2A, approximately 0.34 N for sample 2B, and Sample 2C: approximately 0.22 N, Sample 2D: approximately 0.21 N, Sample 2E: approximately 0.27 N, Sample 2F: approximately 0.22 N was approximately 0.17N.

[0659] As described above, in this example, a resin film was removed from the fabrication substrate 14 using the peeling method according to one embodiment of the present invention. The fat layer 23 could be peeled off. [Example]

[0660] In this example, the results of peeling a resin layer from a fabrication substrate will be described.

[0661] The method for preparing the sample of this example will be described with reference to FIG.

[0662] First, a metal oxide layer 20 was formed on the substrate 14 (FIG. 4(A1)). A glass substrate with a thickness of about 0.7 mm was used for the metal oxide layer 20. Specifically, a titanium film with a thickness of about 5 nm was first formed by sputtering. After that, a mixture of nitrogen and oxygen gas (580 NL / min, oxygen concentration 20 %) and bake at 450°C for 1 hour to oxidize the titanium film. A film was formed.

[0663] Next, a first layer 24 was formed on the metal oxide layer 20 (FIG. 4(B)). The photosensitive material was formed using a material containing a polyimide resin precursor. The thickness of the coated film was approximately 2.0 μm.

[0664] Next, the first layer 24 was subjected to a heat treatment to form a resin layer 23 (FIG. 4(C)). The heat treatment was carried out by baking in the air at 480° C. for 1 hour.

[0665] Next, a peeled layer 25 was formed on the resin layer 23 (FIG. 4(D)). The layer 25 is made up of the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in FIG. Specifically, a silicon oxide nitride film having a thickness of about 400 nm was formed on the resin layer 23. A silicon film, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm These films were formed in this order using plasma CVD at a substrate temperature of 330°C. It was formed under the conditions.

[0666] At this point, the cross-section of the sample was observed by STEM (Scanning Transmission Electron Microscopy). Electron Microscopy photographs are shown in Figure 41(A) and (B). From (A), it was found that the thickness of the resin layer 23 was about 0.79 μm. The thickness of the oxide layer 20 was found to be about 19.2 nm. A titanium film was confirmed by cross-sectional observation. Therefore, it is considered that the titanium film was completely oxidized and turned into a titanium oxide film.

[0667] Then, a UV peeling tape was attached to the peeled layer 25 (the adhesive layer 75b and the substrate 75b in FIG. 4(D)). (corresponding to plate 75a).

[0668] A peeling test was carried out on the sample of this example to peel the resin layer 23 from the fabricated substrate 14 .

[0669] The peel test was carried out using a small tabletop tester (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation. Adhesive tapes and adhesive sheets that comply with the Japanese Industrial Standards (JIS) standard number JIS Z0237 The test method was used. The sample dimensions were 126 mm x 25 mm.

[0670] The peeling results of the sample are shown in Fig. 42(A). In Fig. 42(A), the area above the solid line is the substrate 7. 5a side, and the bottom side is the fabrication substrate 14 side.

[0671] As shown in FIG. 42(A), the resin layer 23 remains on the substrate 75a side, and the resin layer 23 remains on the fabrication substrate 14 side. The resin layer 23 did not remain.

[0672] FIG. 42(B) shows a cross-sectional STEM photograph of the side of the fabrication substrate 14. From FIG. 42(B), it is clear that the metal oxide The thickness of the oxide layer 20 was found to be about 12.6 nm. The layer on the metal oxide layer 20 is a film formed for STEM observation.

[0673] The peeled surface on the substrate 75a side was analyzed by X-ray photoelectron spectroscopy (XPS). When the composition was analyzed using electron spectroscopy, Ti was Not detected.

[0674] From these results, it was found that separation was possible at the interface between the metal oxide layer 20 and the resin layer 23. It is possible.

[0675] Depending on the conditions of the heat treatment performed on the first layer 24, the substrate 14 and the resin layer 23 may be easily bonded. For example, the first layer 24 may not be separated easily. The mixture gas (580NL / min, oxygen concentration 20%) was passed through the furnace at 450°C for 1 hour. When the coating is performed, the substrate 14 and the resin layer 23 cannot be separated by the peel test. Something happened.

[0676] From this, it is possible to manufacture the resin layer 23 by heating the first layer 24 in the air atmosphere. It is believed that the substrate 14 and the resin layer 23 can be easily separated. By doing so, the metal oxide layer 20 and the resin layer 23 are heated more efficiently than when the heating is performed while the gas is flowing. It is thought that moisture can be easily retained in the metal oxide layer 20 or at the interface between the metal oxide layer 20 and the resin layer 23. can be obtained.

[0677] In addition, by heating the first layer 24 at a sufficiently high temperature to form the resin layer 23, the substrate It is believed that the metal oxide layer 20 and the resin layer 23 can be easily separated. It is believed that the adhesion to the resin layer 23 can be reduced.

[0678] As described above, in this example, a resin film was removed from the fabrication substrate 14 using the peeling method according to one embodiment of the present invention. The fat layer 23 could be peeled off. [Example]

[0679] In this example, the results of peeling a resin layer from a fabrication substrate will be described.

[0680] The method for producing the sample of this example will be described with reference to Figures 5 and 6. , which is manufactured using a part of the manufacturing process of an EL display device, and is made from a manufacturing substrate 14 shown in FIG. It has a laminated structure up to the insulating layer 35.

[0681] First, a metal oxide layer 20 was formed on the substrate 14 (FIG. 5(A)). A glass substrate with a thickness of about 0.7 mm was used for the metal oxide layer 20. Specifically, first, a titanium film with a thickness of about 5 nm was formed by sputtering. After that, a mixture of nitrogen and oxygen gas (580 NL / min, oxygen concentration 20%) was The titanium film is oxidized by baking at 450°C for 1 hour while the titanium oxide film is flowing. When the contact angle between the titanium oxide film produced by this method and water was measured, It was about 46°.

[0682] Next, a first layer 24 was formed on the metal oxide layer 20 (FIG. 5(B)). The photosensitive material was formed using a material containing a polyimide resin precursor. The thickness of the coated film was approximately 2.0 μm.

[0683] Next, the first layer 24 is processed into an island shape, and then a heat treatment is performed to form the resin layer 23. The heat treatment was carried out by baking in air at 480°C for 1 hour (Fig. 5(C)). It was.

[0684] Next, a silicon oxynitride film having a thickness of about 400 nm is formed on the resin layer 23 as an insulating layer 31. The insulating layer 31 was formed by plasma CVD at a substrate temperature of 330°C. .

[0685] Next, a transistor 40 was formed on the insulating layer 31 (FIG. 5(E)). A transistor having an oxide semiconductor in a channel formation region was manufactured.

[0686] Next, an insulating layer 33 was formed to cover the transistor 40. The insulating layer 33 had a thickness of about 400 nm. The insulating layer 33 has a silicon oxynitride film of about 100 nm thick and a silicon nitride film of about 100 nm thick. The film was formed using plasma CVD at a substrate temperature of 330°C.

[0687] Next, on the insulating layer 33, an acrylic film having a thickness of about 2.0 μm was formed as the insulating layer .

[0688] Next, on the insulating layer 34, a titanium film having a thickness of about 50 nm and a silicon dioxide film having a thickness of about 200 nm are formed as the conductive layer 61. An aluminum film having a thickness of about 100 nm and a titanium film having a thickness of about 5 nm were formed in this order.

[0689] Next, an insulating layer 35 was formed to cover the end of the conductive layer 61. The insulating layer 35 had a thickness of about 1.0 μm. A polyimide film of 1000 nm was used.

[0690] Thereafter, a polyimide spacer (not shown) having a thickness of about 2.0 μm is formed on the insulating layer 35. A thin film was formed.

[0691] Then, a UV peeling tape was attached to the peeled layer 25 (corresponding to the protective layer 75 in FIG. 6(A)). .

[0692] A peeling test was carried out on the sample of this example to peel the resin layer 23 from the fabricated substrate 14. The method of the release test was the same as in Example 1.

[0693] The peel test was carried out on 10 samples. Of the 10 samples, 5 samples had water on the peel interface. The remaining five samples were peeled off without injecting water.

[0694] Figure 43(A) shows the peeling results of the sample that was peeled by injecting water. The peeling results for the sample peeled without inserting the adhesive are shown in Figure 43(A) and (B). The upper side is the protective layer 75 side, and the lower side is the fabrication substrate 14 side.

[0695] As shown in FIGS. 43A and 43B, the resin layer 23 remains on the protective layer 75 side. Almost no resin layer 23 remained on the 14 side.

[0696] The average force required to peel five samples after injecting water was approximately 0.172 N. The average force required to peel five samples without injecting water was approximately 0.195 N. This shows that the force required for peeling can be reduced by injecting water into the peeling interface. It was.

[0697] The contact angle between the titanium oxide film formed in this example and water was a small value of about 46°. By using a film with high tension (high wettability), the effect of water injection is enhanced and the force required for peeling is reduced. It is believed that this has reduced

[0698] As described above, in this example, a resin film was removed from the fabrication substrate 14 using the peeling method according to one embodiment of the present invention. The fat layer 23 could be peeled off. [Example]

[0699] In this example, the results of peeling a resin layer from a fabrication substrate will be described.

[0700] The method for preparing the sample of this example will be described with reference to FIG.

[0701] First, a metal oxide layer 20 was formed on the substrate 14 (FIG. 4(A1)). A glass substrate with a thickness of about 0.7 mm was used for the metal oxide layer 20. Specifically, a tungsten film was first formed by sputtering. In this example, the thickness of the tungsten film was about 5 nm and that of the tungsten film was about 10 nm. Two types were prepared. Then, a mixture of nitrogen and oxygen gas (580 NL / min, oxygen The tungsten film was formed by baking at 450°C for 1 hour while flowing 20% ​​HCl. The film was oxidized to form a tungsten oxide film.

[0702] Next, a first layer 24 was formed on the metal oxide layer 20 (FIG. 4(B)). The material was formed using a material containing a non-photosensitive soluble polyimide resin. The film thickness was approximately 2.0 μm.

[0703] Next, the first layer 24 was subjected to a heat treatment to form a resin layer 23 (FIG. 4(C)). For heat treatment, a mixture of nitrogen and oxygen gas (580NL / min, oxygen concentration 20%) was used. ) while flowing, bake at 180°C for 30 minutes, then bake for 4 minutes while flowing the same mixed gas. The substrate was baked at 00°C for 1 hour.

[0704] Next, a peeled layer 25 was formed on the resin layer 23 (FIG. 4(D)). The layer 25 is made up of the insulating layer 31 and the insulating layer 32 (gate insulating layer of the transistor) shown in FIG. Specifically, a silicon oxide nitride film having a thickness of about 100 nm was formed on the resin layer 23. A silicon film, a silicon nitride film with a thickness of about 400 nm, and a silicon oxynitride film with a thickness of about 50 nm These films were formed in this order using plasma CVD at a substrate temperature of 330°C. It was formed under the conditions.

[0705] Cross-sectional STEM image of the sample at this stage (a sample with a tungsten film of approximately 5 nm thickness) The photographs are shown in Figures 44(A) and (B). From Figure 44(A), it can be seen that the thickness of the resin layer 23 is about 1.0 From FIG. 44(B), the thickness of the metal oxide layer 20 is found to be approximately 23.8 nm. In the cross-sectional observation, no tungsten film was observed. It is considered that all of the tungsten oxide films are oxidized to form tungsten oxide films.

[0706] Then, a UV peeling tape was attached to the peeled layer 25 (the adhesive layer 75b and the substrate 75b in FIG. 4(D)). (corresponding to plate 75a).

[0707] A peeling test was carried out on the sample of this example to peel the resin layer 23 from the fabricated substrate 14. The method of the release test was the same as in Example 1.

[0708] Figure 45(A) and (B) show the peeling results of the samples. Figure 45(A) shows the peeling results of a 5 nm thick tank. The results for the sample on which a tungsten film was formed are shown in Figure 45(B), and the results for the sample on which a tungsten film with a thickness of about 10 nm was formed are shown in Figure 45(C). In Figures 45(A) and 45(B), the area above the solid line is the substrate. 75a side, and the bottom side is the fabrication substrate 14 side.

[0709] As shown in FIGS. 45(A) and (B), the resin layer 23 remains on the substrate 75a side. No resin layer 23 remained on the 14 side.

[0710] FIG. 45(C) shows the side of the substrate 14 in the sample on which a tungsten film with a thickness of about 5 nm is formed. 45(C) shows a cross-sectional STEM photograph of the metal oxide layer 20. From FIG. 45(C), it can be seen that the thickness of the metal oxide layer 20 is about 21.8 mm. The resin layer 23 was not observed in the cross-sectional observation. The layer is a film formed for STEM observation.

[0711] When the conduction was checked between the peeled surface on the substrate 75a side and the peeled surface on the fabrication substrate 14 side, Conduction was achieved on the peeled surface on the substrate 14 side.

[0712] From these results, it was found that separation was possible at the interface between the metal oxide layer 20 and the resin layer 23. It is possible.

[0713] As described above, in this example, a resin film was removed from the fabrication substrate 14 using the peeling method according to one embodiment of the present invention. The fat layer 23 could be peeled off. [Example]

[0714] In this example, a display device was manufactured using a peeling method according to one embodiment of the present invention. Reveal.

[0715] The display device 300B produced in this example is similar to the display device 300A shown in FIGS. 24 and 25. The display device 300B manufactured in this example has a common configuration in many parts. A part of the area including the PC 372, a part of the area including the circuit 364, and an area including the display unit 362 46 shows an example of a cross section of each of the display areas. The main difference is that the colored layer 134 and the insulating layer 194 are not included, and the EL layer 192 is not colored. The display device 300 differs from the display device 300A in that the display device 300A is a display device having a plurality of display areas.

[0716] The display device 300B will now be described in detail. The size of the display unit 362 is 4.38 inches diagonally, and The number of pixels is 768 x 1024, and the resolution is 292 ppi. It has a built-in multiplexer (DeMUX) that functions as a source driver. The display device 300B also has a built-in scan driver.

[0717] The channel formation region of the transistor is made of metal oxide, specifically In-Ga-Zn oxide. The object was used.

[0718] The liquid crystal element 180 is a reflective twisted ECB mode liquid crystal element. The reflected light is extracted to the outside of the display device 300B through the colored layer 131 (color filter). The aperture ratio of the liquid crystal element 180 is 76%.

[0719] An organic EL element was used as the light emitting element 170. The light emitting element 170 has a bottom emission structure. The light from the light emitting element 170 is taken to the outside of the display device 300B through the colored layer 131. The light emitting element 170 has an EL layer 192 painted separately for each sub-pixel (RGB). The aperture ratio of the light emitting element 170 is 3.9%.

[0720] Regarding the step of applying the peeling method according to one embodiment of the present invention in the manufacturing process of the display device 300B, A glass substrate is used as the substrate 14 for preparation in FIG. A titanium oxide film was used as the layer 20, and a polyimide film was used as the resin layer 23. Specifically, after forming an inorganic insulating layer on the resin layer 23, an electric field is applied from the electrode 311a to the inorganic insulating layer. The laminated structure up to the electrode 193 (see FIG. 46) was formed. The adhesive layer 142 in FIG. 5b. The substrate 351 in FIG. 46 corresponds to the substrate 75a. The metal oxide layer 20 and the resin layer 23 were separated using the same peeling method.

[0721] Thereafter, the resin layer 23 and the inorganic insulating layer remaining on the substrate 351 side were removed. An alignment film 133a was formed on the electrode 311a. A laminated structure from the optical layer 132 to the alignment film 133b was formed. 361 were attached together with the liquid crystal layer 112 sandwiched therebetween.

[0722] 47(A) and (B) show display photographs of the display device 300B. It was found that a display device could be fabricated using this method, and that full-screen display was possible without any major problems. It was confirmed that: [Example]

[0723] The items shown in Table 2 in the peeling method according to one embodiment of the present invention will be described in detail below.

[0724] [Table 2]

[0725] As shown in Example 1 and the like, H2O plasma treatment is suitable for treating the underlayer. As the material for the resin layer, a material having photosensitivity and containing a polyimide resin precursor is suitable. The heating conditions for forming the resin layer are preferably baked at 480°C in an air atmosphere. is.

[0726] When the resin layer material is applied, uneven application occurs on the outer periphery of the substrate. It is preferable that such unnecessary portions can be easily removed before the resin layer is cured. For example, it can be removed using an organic solvent such as thinner. Depending on the type of paint, it may react with the thinner and become cloudy, gel, or solidify. The resin layer material used in Example 1 is soluble in organic solvents such as thinner, so the hardness of the resin layer Unwanted parts can be easily removed before curing.

[0727] The use of a photosensitive material is preferable because it makes it easier to process the resin layer. The resin layer can be processed by performing exposure and development. Since the above is unnecessary, the manufacturing process can be shortened.

[0728] In the process of irradiating the entire surface of the resin layer with laser light through the substrate, the back side (resin If there is dirt on the surface opposite to the surface where the oil layer is formed, the light will not be irradiated properly, resulting in poor peeling. In addition, if the laser power is too strong for the resin layer, the resin layer may be altered. For example, soot may be generated. In this case, the process of irradiating the backside of the substrate with light is not performed. In one aspect of the present invention, the heat treatment is performed without damaging the resin layer. This process improves the peelability of the resin layer. Even if foreign matter is attached to the substrate, uneven heating does not occur in the resin layer. This prevents the yield of the process of separating the substrate from the resin layer from decreasing. As shown, the thermal conductivity of titanium oxide is approximately 6.3 W / m K, and the thermal conductivity of polyimide is , approximately 0.18 W / m K.

[0729] As shown in Example 1, the peeling interface is the interface between the metal oxide layer and the resin layer. Therefore, no resin layer remains on the fabricated substrate after peeling.

[0730] When the resin layer is removed after peeling, the through electrodes can be exposed. In order to remove the resin layer, the finished device is preferably It is not affected by the color of the

[0731] When the resin layer is not removed after peeling, it is preferable to expose the through electrodes by peeling. When forming the layer, an opening is made in the resin layer, and a through electrode is formed in the opening. The resin layer and the through electrode are exposed. For the through electrode, a material with low adhesion to the substrate is used. It is preferable that the contact area between the through electrode and the substrate is as small as possible. Because a photosensitive material is used, openings can be formed in the resin layer using exposure technology. In this case, the opening has a tapered shape. The resin layer can be processed by ashing, dry etching, etc. The shape of the side wall of the opening in the fat layer is nearly vertical. The device is affected by the color of the resin layer. It is preferable not to provide a resin layer in such a portion.

[0732] When applying the peeling method according to one embodiment of the present invention, the force required for peeling is, for example, about 0.13 N. be. [Explanation of symbols]

[0733] 10A display device 10B display device 10C display device 13 Adhesive layer 14 Fabrication substrate 19 Metal layer 20 Metal oxide layer 21 Liquid supply mechanism 22 PCB 23 Resin layer 23a Resin layer 23b Resin layer 24 First Layer 25 Layer to be peeled 28 Adhesive layer 29 Circuit Board 30 Plasma 31 Insulating layer 31a Insulating layer 31b insulating layer 32 Insulating layer 33 Insulating layer 34 Insulating layer 35 Insulating layer 40 transistors 41 Conductive layer 43a Conductive layer 43b Conductive layer 43c conductive layer 44 Metal Oxide Layer 45 Conductive layer 49 Transistors 56 Laminate 56a remainder 56b One surface 59 Laminate 60 Light-emitting element 61 Conductive layer 62 EL layer 63 Conductive Layer 64 Break 65 Equipment 66 Laser light 67 Irradiation area 74 Insulating layer 75 Protective layer 75a board 75b Adhesive layer 76 Connectors 80 transistors 81 Conductive layer 82 Insulating layer 83 Metal Oxide Layer 84 Insulating layer 85 Conductive Layer 86a Conductive layer 86b Conductive layer 86c Conductive layer 91 Fabricated board 92 Metal Oxide Layer 93 Resin layer 95 Insulating layer 96 Bulkhead 97 Colored layer 98 Light blocking layer 99 Adhesive layer 112 Liquid crystal layer 113 Electrode 115 Insulating layer 117 Insulating Layer 121 Insulating layer 131 Colored layer 132 Light blocking layer 133a Alignment film 133b Alignment film 134 Colored layer 135 Polarizing Plate 140 transistors 141 Adhesive layer 142 Adhesive layer 150 Layer including peeled layer 151 Tape 153 Support roller 154 Guide roller 162a channel region 162b Low resistance region 163 Insulating Layer 164 Conductive Layer 165 Insulating Layer 166 Insulating Layer 167a conductive layer 167b Conductive layer 170 Light-emitting element 180 Liquid crystal element 191 Electrode 192 EL layer 193 Electrode 194 Insulating Layer 201 Transistor 203 Transistor 204 Connection 205 Transistor 206 Transistor 207 Connection 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 216 Insulating Layer 217 Insulating Layer 220 Insulating layer 220a insulating layer 220b insulating layer 221a Conductive layer 221b Conductive layer 222a conductive layer 222b Conductive layer 223 Conductive Layer 224 Conductive Layer 225 Insulating Layer 226 Coating membrane 227 Lens 228 Conductive Layer 231 Semiconductor layer 232 Insulating layer 233 Diffusion Film 234a conductive layer 234b Conductive layer 234c Insulating layer 234d Insulation layer 235 PCB 242 Connection Layer 243 Connectors 252 Connection 300A display device 300B display device 310A Input / Output Unit 310B I / O device 311a electrode 311b electrode 311c electrode 351 Circuit Board 361 Circuit Board 362 Display section 364 circuits 365 Wiring 372 FPC 373 IC 381 Display section 382 Drive circuit section 451 Aperture 600 Tape 601 Support 602 Tape reel 604 Direction change roller 606 Pressure roller 606a Cylinder 606b Cylinder 607 Direction change roller 609 Carrier Plate 613 reels 614 Drying mechanism 617 Laura 620 Ionizer 631 Guide roller 632 Guide roller 633 Guide Roller 634 Guide roller 639 Ionizer 641 PCB Load Cassette 642 PCB unload cassette 643 Conveyor Roller 644 Conveyor roller 645 Conveyor roller 659 Liquid supply mechanism 665 Guide Roller 666 Guide Roller 670 Separation Tape 671 Support 672 Tape Reel 673 reels 674 Guide Roller 675 Pressure roller 676 Directional Roller 677 Guide Roller 678 Guide Roller 679 Guide Roller 683 reels 800 Mobile Information Terminals 801 Case 802 chassis 803 Display section 805 Hinge part 810 Mobile Information Terminals 811 Case 812 Display section 813 Operation button 814 external connection port 815 Speaker 816 Mike 817 Camera 820 Camera 821 Case 822 Display section 823 Operation Button 824 shutter button 826 Lens 8000 Display Module 8001 Top cover 8002 Lower cover 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery 8015 Light-emitting part 8016 Light receiving section 8017a Light guiding section 8017b Light guiding section 8018 light 9000 chassis 9001 Display section 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9055 Hinge 9200 Mobile Information Terminal 9201 Mobile Information Terminal 9202 Mobile information terminals

Claims

[Claim 1] forming a first layer of material on a substrate; forming a second layer of material on the first layer of material; and separating the first material layer and the second material layer; the first material layer comprises a gas containing one or both of hydrogen and oxygen; the second material layer includes a resin; The method for manufacturing a semiconductor device, wherein the first material layer and the second material layer are separated by breaking hydrogen bonds.

Images