Semiconductor processing device, semiconductor processing method, and semiconductor device

Abstract

To provide a semiconductor processing device and a semiconductor processing method that can individually recognize semiconductor devices by a new method.SOLUTION: In a semiconductor processing device EA equipped with marking means 10 that applies a predetermined mark MK to a semiconductor device SD using a marking material IK, the marking means 10 applies the predetermined mark MK to the semiconductor device SD using a marking material IK that is mixed such that at least one of a fluorescent material FM, a luminous material NM, and a phosphorescent material PM is scattered therein.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor processing apparatus, a semiconductor processing method, and a semiconductor device. [Background technology]

[0002] BACKGROUND ART A semiconductor processing apparatus that applies a predetermined mark to a semiconductor wafer is known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-112579 Summary of the Invention [Problem to be solved by the invention]

[0004] The laser processing device (semiconductor processing device) described in Patent Document 1 discloses a technology that can individually recognize semiconductor devices by reading IDs and anti-counterfeit marks 110 (predetermined marks) that are applied to semiconductor wafers 10 (semiconductor devices) by irradiating them with laser light. However, in recent years, there has been a demand for technology that can individually recognize semiconductor devices using new methods.

[0005] An object of the present invention is to provide a semiconductor processing apparatus and a semiconductor processing method that can individually recognize semiconductor devices by a new method. Another object of the present invention is to provide a semiconductor device that can be individually recognized by a new method. [Means for solving the problem]

[0006] The present invention employs the configurations described in the claims. [Effects of the Invention]

[0007] According to the present invention, a predetermined mark is applied to a semiconductor device using a marking material that is mixed so that at least one of a fluorescent material, a luminous material, and a phosphorescent material is scattered therein, thereby enabling individual recognition of semiconductor devices using a new method in which individual recognition is performed using at least one of the scattered fluorescent material, the luminous material, and the phosphorescent material. Furthermore, according to the present invention, a predetermined mark is applied to the semiconductor device using a marking material that is mixed so that at least one of a fluorescent material, a luminous material, and a phosphorescent material is scattered therein, thereby making it possible to produce a semiconductor device that can be individually recognized using a new method in which individual recognition is performed using at least one of the scattered fluorescent material, the luminous material, and the phosphorescent material. [Brief explanation of the drawings]

[0008] [Figure 1] 1A to 1F are explanatory diagrams of a semiconductor processing apparatus and a semiconductor device according to an embodiment of the present invention, and 1G to 1J are explanatory diagrams of modified examples. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In this embodiment, the X-axis, Y-axis, and Z-axis are orthogonal to each other, and the X-axis and Y-axis are axes within a predetermined plane, and the Z-axis is an axis orthogonal to the predetermined plane. Furthermore, in this embodiment, the view from the front in Fig. 1(A) parallel to the Y-axis is used as the reference, and when directions are indicated without specifying the figure, "up" is the direction of the Z-axis arrow, "down" is the opposite direction, "left" is the direction of the X-axis arrow, "right" is the opposite direction, "front" is the direction toward the front in Fig. 1(A) parallel to the Y-axis, and "rear" is the opposite direction.

[0010] The semiconductor processing device EA that implements the semiconductor processing method of the present invention is equipped with a marking means 10 that performs a marking process of applying a predetermined mark MK to the semiconductor device SD using oil-based ink IK (see Figure 1 (D)) as a marking material, an energy application means 20 that performs an energy application process of applying heat HA as a predetermined energy to an adhesive sheet AS as a covering material, an imaging means 30 that performs an imaging process of imaging the mark MK to form an individual recognition image IP that can be individually recognized using a fluorescent material FM (see Figure 1 (D)) and outputting the individual recognition image IP to another device EB, and a light intensity adjustment means 40 that adjusts the brightness of the peripheral part of the mark MK when imaging the mark MK by the imaging means 30, and is arranged above a moving means 50 that transports the semiconductor device SD. In addition, the semiconductor device SD of this embodiment is configured such that an adhesive sheet AS, which hardens as a change specific to heat HA when heat HA is applied, is coated on a semiconductor wafer (hereinafter simply referred to as "wafer") WF as the semiconductor body.

[0011] The marking means 10 comprises linear motors 11, 12 as driving devices, a linear motor 13 as a driving device supported by sliders 11A, 12A of each linear motor 11, 12, an inkjet printer 14 as a marking device supported by slider 13A of linear motor 13, and a detector 15 such as a camera or sensor that detects the position, orientation, etc. of the semiconductor device SD supported by moving means 50, and is configured to apply a mark MK to the semiconductor device SD using oil-based ink IK formulated so that fluorescent material FM is scattered throughout. The marking means 10 of this embodiment is configured to provide marks MK on the adhesive sheet AS. The fluorescent material FM may be, for example, particles made of a single fluorescent material such as europium, cerium, or yttrium, particles made of a composite containing the fluorescent material, or particles in which the fluorescent material is coated or laminated on a specific component, and has a maximum width of 10 nm (nanometers) to 1 μm (micrometer), and is blended in a weight ratio of 0.01% to 1% of the weight of the oil-based ink IK that does not contain the fluorescent material FM.

[0012] The energy applying means 20 includes a hot air blower 21 as an energy applying device capable of applying heat HA.

[0013] The imaging means 30 is equipped with a camera 31 as an imaging device, and as shown in Figure 1(B), the central part of the semiconductor device SD is set as a scanning area SA, an image of a specific area within the scanning area SA is captured to form an individual recognition image IP, and the individual recognition image IP is output to another device EB. The imaging means 30 of this embodiment locates the number "1" included in the mark MK within the scanning area SA, and defines the lower left corner BP of the number "1" as viewed from the direction shown in Fig. 1(B) as a specific area, and by imaging this specific area at a magnification of 1000 times, an individual recognition image IP that can be individually recognized by the fluorescent material FM is formed (see Fig. 1(D)). Note that the position, range, etc. of the scanning area SA of the imaging means 30 of this embodiment are preset so that there is always one and only one number "1" included in the mark MK on the semiconductor device SD.

[0014] The light intensity adjusting means 40 includes a linear motor 41 as a driving device, a cover material 42 supported by the output shaft 41A of the linear motor 41 and having a camera 31 attached thereto, and an annular LED lamp 43 attached to the cover material 42 as a light energy irradiation device that emits ultraviolet light UV as light energy.

[0015] The moving means 50 includes a linear motor 51 as a driving device, and a support table 52 supported by a slider 51A of the linear motor 51 and having a support surface 52A that can be adsorbed and held by a pressure reduction means (holding means) such as a pressure reduction pump or a vacuum ejector (not shown).

[0016] The operation of the semiconductor processing apparatus EA will now be described. First, a user of the semiconductor processing apparatus EA (hereinafter simply referred to as "user") inputs a signal to start automatic operation to the semiconductor processing apparatus EA, in which each component is placed in the initial position shown by the solid line in Fig. 1(A), via operation means (not shown) such as an operation panel, a personal computer, etc. Next, the user or a transport means (not shown) such as an articulated robot or a belt conveyor places the semiconductor device SD at a predetermined position on the support table 52 with the adhesive sheet AS facing up, as shown in Fig. 1(A), and the moving means 50 drives a pressure reducing means (not shown) to start suction and holding on the support surface 52A.

[0017] Thereafter, the marking means 10 drives the detector 15 to detect the position, orientation, etc. of the semiconductor device SD, and drives the linear motors 11-13 and the inkjet printer 14 based on the detection result of the detector 15 to apply a mark MK to the adhesive sheet AS. Note that, in this embodiment, the mark MK applied by the marking means 10 is written in two lines, with the alphabet characters "ABCDEF" in the upper line and the numbers "123456" in the lower line, as shown in FIG. 1(B). Furthermore, the marking means 10 of this embodiment applies the mark MK so that when the semiconductor device SD is later singulated along the cut lines CL and the wafer WF becomes chips CP to form a plurality of semiconductor devices SD, as shown in FIG. 1(G), the marking means 10 applies the mark MK so that the mark MK is located at a predetermined position on each semiconductor device SD.

[0018] Next, when the marking means 10 has completed applying the mark MK, the moving means 50 drives the linear motor 51 to transport the semiconductor device SD to the right, and as shown by the two-dot chain line in Fig. 1(A), when the semiconductor device SD reaches a position where the energy applying means 20 can apply heat HA, the driving of the linear motor 51 is stopped. Then, the energy applying means 20 drives the hot air blower 21 to apply heat HA to the adhesive sheet AS, and when the adhesive sheet AS hardens, the energy applying means 20 stops driving the hot air blower 21. Next, the moving means 50 drives the linear motor 51 to transport the semiconductor device SD to the right, and as shown by the two-dot chain line in Fig. 1(A), the driving of the linear motor 51 is stopped when the support table 52 reaches directly below the lid member 42.

[0019] Thereafter, the light intensity adjusting means 40 drives the linear motor 41, and as shown in FIG. 1(C), the lower part of the lid member 42 abuts on the support table 52 to dim the light around the mark MK. Next, the light intensity adjusting means 40 drives the LED lamp 43 to emit ultraviolet light UV, causing the fluorescent material FM contained in the mark MK to emit light. Then, the imaging means 30 drives the camera 31 to capture an image of the lower left corner of the number "1" contained in the mark MK at 1000x magnification, form an individual recognition image IP that can be individually recognized using the fluorescent material FM, and output the individual recognition image IP to another device EB.

[0020] Next, when the imaging means 30 outputs the individual recognition image IP to the other device EB, the light intensity adjusting means 40 stops driving the LED lamps 43, and then drives the linear motor 41 to return the lid member 42 to its initial position. Thereafter, the moving means 50 stops driving the pressure reducing means (not shown) and releases the suction hold on the support surface 52A, and then the user or the transporting means (not shown) holds the semiconductor device SD and transports the semiconductor device SD to the other device EB, after which the moving means 50 drives the linear motor 51 to return the support table 52 to its initial position, and the same operations as those described above are repeated thereafter.

[0021] After the semiconductor device SD is transported to the other device EB, the individual recognition image IP output by the imaging means 30 is used in the other device EB, for example, as follows: That is, the other device EB images the lower left corner BP of the number "1" included in the mark MK at 1000 times the magnification in the same manner as the imaging means 30, forms an external individual recognition image IP1 (see FIGS. 1(E) and 1(F)), and compares the individual recognition image IP output by the imaging means 30 with the external individual recognition image IP1. Here, if the individual recognition image IP output by the imaging means 30 is an image as shown in FIG. 1(D) and the external individual recognition image IP1 captured by the other device EB is an image as shown in FIG. 1(E), that is, if the image features such as the position and size of the fluorescent material FM scattered in the image match between the individual recognition image IP and the external individual recognition image IP1, the other device EB recognizes that the semiconductor device SD that was the subject of the image capture is a qualified product to be processed, i.e., a genuine product or a product as planned, and performs normal processing on the semiconductor device SD. In this case, normal processing means, for example, if the other equipment EB is a cutting equipment, the processing of cutting the semiconductor device SD into a predetermined shape, and, for example, if the other equipment EB is a cleaning equipment, the processing of cleaning the semiconductor device SD.

[0022] On the other hand, if the individual recognition image IP output by the imaging means 30 is an image as shown in Fig. 1(D) and the external individual recognition image IP1 captured by the other equipment EB is an image as shown in Fig. 1(F), that is, if the image features do not match between the individual recognition image IP and the external individual recognition image IP1, the other equipment EB recognizes that the semiconductor device SD that was the subject of the image capture is an unsuitable product to be processed, such as an irregular product or an unexpected product, and performs an unconventional process on the semiconductor device SD. Examples of unconventional process in this case include removing the semiconductor device SD from the other equipment EB using a driving device such as an articulated robot, or activating a warning means such as a lamp or buzzer to notify the user that the semiconductor device SD is an unsuitable product to be processed. Note that the individual recognition image IP and the external individual recognition image IP1 shown in Figures 1(D) and (E) have different positions for capturing images of specific areas, but the other device EB compares a portion of the individual recognition image IP with a portion of the external individual recognition image IP1 by using a matching process, a length measurement process, etc., to determine whether the semiconductor device SD that was the subject of the image capture is a suitable product for processing or a non-suitable product for processing.

[0023] According to the above-described embodiment, a predetermined mark MK is applied to the semiconductor device SD using oil-based ink IK formulated so that fluorescent material FM is scattered throughout, thereby enabling individual recognition of the semiconductor device SD using a new method in which individual recognition is performed using the scattered fluorescent material FM. As shown in Figures 1(B), (D) to (J), the semiconductor device SD of the present invention has a predetermined mark MK imparted thereto using oil-based ink IK as a marking material, and fluorescent material FM is blended so as to be scattered throughout the oil-based ink IK. According to such a semiconductor device SD, a predetermined mark MK is applied to the semiconductor device SD using oil-based ink IK formulated so that fluorescent material FM is scattered throughout, making it possible to create a semiconductor device SD that can be individually recognized using a new method in which individual recognition is performed using the scattered fluorescent material FM.

[0024] The means and steps of the present invention are not limited in any way as long as they can perform the operations, functions, or steps described for those means and steps, and are in no way limited to the components and steps of a single embodiment shown in the above embodiment. For example, the energy applying means may be anything that can apply a predetermined amount of energy to the coating material, and is not limited in any way as long as it is within the technical scope in light of the common general technical knowledge at the time of filing (the same applies to other means and steps).

[0025] As shown in FIGS. 1(G) and 1(H), the marking means 10 may employ a semiconductor device SD in which an adhesive sheet AS is coated on a chip CP as a semiconductor body, and may apply a mark MK to the semiconductor device SD using oil-based ink IK formulated to have fluorescent material FM scattered therein, or as shown by the parenthesized symbols in FIGS. 1(D) to 1(F), may apply a mark MK to the semiconductor device SD using oil-based ink IK formulated to have luminous material NM scattered therein, or may apply a mark MK to the semiconductor device SD using oil-based ink IK formulated to have phosphorescent material PM scattered therein. Alternatively, a mark MK may be applied to the semiconductor device SD using an oil-based ink IK formulated so that fluorescent material FM and luminous material NM are interspersed, or a mark MK may be applied to the semiconductor device SD using an oil-based ink IK formulated so that fluorescent material FM and phosphorescent material PM are interspersed, or a mark MK may be applied to the semiconductor device SD using an oil-based ink IK formulated so that luminescent material NM and phosphorescent material PM are interspersed, or a mark MK may be applied to the semiconductor device SD using an oil-based ink IK formulated so that fluorescent material FM, luminous material NM and phosphorescent material PM are interspersed. The fluorescent material FM may be any material that emits light by luminescence, which is excited by external energy and emits light. Furthermore, the luminous material NM may be, for example, a particle made of a luminous material raw material alone containing a fluorescent substance such as the fluorescent material FM and a stimulant substance such as radium or tritium, a particle made of a composite containing a luminous material raw material, or a particle in which a luminous material raw material is coated or laminated on a specified component, and any material may be used as long as the fluorescent material emits light (is self-luminous) in response to energy emitted by the stimulant substance rather than energy received from the outside. Furthermore, the phosphorescent material PM may be, for example, a particle made of a single phosphorescent raw material such as zinc sulfide or strontium aluminate, a particle made of a composite containing a phosphorescent raw material, or a particle in which a phosphorescent raw material is coated or laminated on a specified member, and may be any material that stores sunlight, artificial light, etc. as energy and releases the stored energy as light. The marking means 10 may be any marking device, such as an inkjet printer, letterpress printer, intaglio printer, lithographic printer, silk screen printer, screen printer, thermal printer, thermal transfer printer, or dot impact printer, and may or may not be provided with a detector 15. The mark MK may be provided while the moving means 50 moves the support table 52, or the mark MK may be provided only on the coating material, or the mark MK may be provided only on the semiconductor body, or as shown in FIG. 1(H), on both the semiconductor body and the coating material. The mark MK may be applied to the semiconductor device SD in any manner, such as applying the mark MK across each cut line CL as shown in the upper part of Figure 1(I) and the upper part of (J), applying the mark MK outside the cut line CL as shown in the lower part of Figure 1(I), applying the mark MK regardless of the cut line CL as shown in the lower part of Figure 1(J), or applying the mark MK so that when the semiconductor device SD is diced along the cut line CL into multiple chips CP, the mark MK is not applied to each chip CP individually. The mark MK applied by the marking means 10 may be any mark, such as a logo, number, letter, diagram, picture, symbol, line, dot, etc., and may be one character or one character, multiple characters or multiple characters, one line or one column, or multiple lines or columns.

[0026] The energy applying means 20 may, for example, apply a predetermined energy to the covering material before applying a mark MK to the semiconductor device SD, apply a predetermined energy to the covering material after applying a mark MK to the semiconductor device SD and before imaging the mark MK, apply a predetermined energy to the covering material after imaging the mark MK and before forming the individual recognition image IP, apply a predetermined energy to the covering material after forming the individual recognition image IP and before outputting the individual recognition image IP, or apply a predetermined energy to the covering material after outputting the individual recognition image IP. The predetermined energy may be applied to the covering material at any timing, or may be applied without stopping the movement of the semiconductor device SD, or may be applied in conjunction with the energy applying means 20. The specified energy may be applied while moving both the coating material and the energy applying device, or the specified energy may be applied to the entire coating material or to a part of the coating material. Any type of energy applying device may be used as the specified energy, such as an energy applying device that applies electromagnetic waves such as ultraviolet rays, infrared rays, visible light, sound waves, X-rays or gamma rays, an energy applying device that applies a heating medium such as hot water or hot air, or an energy applying device that applies a cooling medium such as cold water or cold air. Any type of energy applying device may be used as long as it is capable of causing a change specific to the energy in the coating material, taking into account the characteristics, properties, properties, material, composition and configuration of the coating material, and it may or may not be provided in the semiconductor processing apparatus EA of the present invention.

[0027] The imaging means 30 may image the mark MK to form an individual recognition image IP that can be individually recognized using a luminous material NM and output the individual recognition image IP to another device EB, or may image the mark MK to form an individual recognition image IP that can be individually recognized using a phosphorescent material PM and output the individual recognition image IP to another device EB, or may image the mark MK to form an individual recognition image IP that can be individually recognized using a fluorescent material FM and a luminous material NM and output the individual recognition image IP to another device EB, or may image the mark MK to form an individual recognition image IP that can be individually recognized using a fluorescent material FM and a phosphorescent material PM and output the individual recognition image IP to another device EB, or may image the mark MK to form an individual recognition image IP that can be individually recognized using a luminous material NM and a phosphorescent material PM and output the individual recognition image IP to another device EB, or may image the mark MK to form an individual recognition image IP that can be individually recognized using a fluorescent material FM, a luminous material NM and a phosphorescent material PM and output the individual recognition image IP to another device EB. The imaging means 30 may, for example, move the imaging device in the front-rear and left-right directions using a so-called XY table as a driving device, and image the mark MK for each area surrounded by the cut line CL or other areas, or may move the imaging device to a predetermined position on the semiconductor device SD to image the mark MK, or may image the entire scanning area SA instead of imaging a specific area within the scanning area SA, or the scanning area SA or the specific area may be set anywhere, such as the entire semiconductor device SD, the upper half of the semiconductor device SD, or the right end of the semiconductor device SD, or the specific area may be set anywhere, such as the upper right end of the alphabet "E" or the number It may be set anywhere on the mark MK, such as the bottom end of the letter "4", or the mark MK may be imaged without setting a scanning area SA or a specific area, or the entire mark MK may be imaged, or only part of the mark MK may be imaged.When imaging only part of the mark MK, for example, it may be imaged at a predetermined position determined by coordinates in two orthogonal axes with a V-notch or orientation flat formed on the wafer WF as the reference position, or at a predetermined position determined by coordinates in two orthogonal axes with a corner or center of the chip CP as the reference position, or the internal area of ​​a predetermined mark formed on the coating material, or the internal area of ​​a predetermined colored portion formed on the coating material, etc. The imaging means 30 may employ any imaging device, such as a microscope camera, an infrared camera, an ultraviolet camera, an ultrasonic camera, an X-ray camera, an optical sensor, an ultrasonic sensor, an area sensor, a line sensor, or the like, as long as it is capable of imaging the mark MK, forming an individual recognition image IP that can be individually recognized by at least one of a fluorescent material FM, a luminous material NM, and a phosphorescent material PM, and outputting the individual recognition image IP to another device EB; at least two of the device that images the mark MK, the device that forms the individual recognition image IP, and the device that outputs the individual recognition image IP to another device EB may be integrated; the device that images the mark MK, the device that forms the individual recognition image IP, and the device that outputs the individual recognition image IP to another device EB may be separate; the imaging device may be supported by the lid material 42 or something other than the lid material 42; and the mark MK may be imaged at a magnification of 1000 times or more, or at a magnification of 1000 times or less. Alternatively, depending on the size of the fluorescent material FM, luminous material NM or phosphorescent material PM and the intensity and brightness of the light they emit, the mark MK may be imaged without being enlarged or reduced in size. Any device may be used as long as it is possible to image the mark MK to form an individual recognition image IP that can be individually recognized by at least one of the fluorescent material FM, luminous material NM and phosphorescent material PM and output the individual recognition image IP to another device EB. The mark MK may be imaged without stopping the movement of the semiconductor device SD, or the mark MK may be imaged while moving both the semiconductor device SD and the imaging device. This may or may not be included in the semiconductor processing device EA of the present invention. If the semiconductor processing device EA of the present invention does not have an imaging means 30, for example, another device EB or another device may image the mark MK and create an individual recognition image IP that can be individually recognized by at least one of the fluorescent material FM, luminous material NM and phosphorescent material PM.

[0028] The light intensity adjusting means 40 may adjust the brightness of the periphery of the mark MK without abutting the lower part of the cover material 42 on the support table 52, or may adjust the brightness of the periphery by, for example, dimming the light of artificial lighting without using the cover material 42, or may adjust the brightness of the periphery in any way, such as dimming the brightness of the periphery by 100%, dimming the brightness of the periphery by 30%, brightening the brightness of the periphery by 50%, brightening the brightness of the periphery by 110%, or the like. Any light energy irradiating device may be used, such as a fluorescent lamp, an incandescent lamp, a high-pressure mercury lamp, a low-pressure mercury lamp, a metal halide lamp, a xenon lamp, a halogen lamp, or the like. Alternatively, a light energy irradiator that emits electromagnetic waves such as infrared rays, visible light, X-rays or gamma rays as light energy may be employed, and any light energy irradiator may be employed as long as it can cause light to be emitted from fluorescent material FM, luminous material NM or phosphorescent material PM. A spherical or rectangular light energy irradiator may be employed, or one or more light energy irradiators may be employed. The light energy irradiator may be supported by the lid material 42 or something other than the lid material 42, and may or may not be provided in the semiconductor processing apparatus EA of the present invention. When an oil-based ink IK formulated to have luminous material NM scattered therein, or an oil-based ink IK formulated to have phosphorescent material PM scattered therein, is used, the light intensity adjustment means 40 may be configured to stop the operation of the light energy irradiation device and cease the irradiation of light energy before the mark MK is imaged by the imaging means 30.

[0029] The moving means 50 may employ a support table 52 that cannot be held by suction on the support surface 52A, and may or may not be provided in the semiconductor processing apparatus EA of the present invention.

[0030] The semiconductor processing apparatus EA may include a protective material applying means for applying a protective material to cover the mark MK. Such a protective material applying means may employ, for example, an adhesive sheet, a pressure-sensitive adhesive sheet, a resin material, paint, varnish, rubber, adhesive, a pressure-sensitive adhesive, a resin plate, or a metal plate. Such a protective material applying means may be a sheet application device or a sheet stacking device for applying an adhesive sheet, a pressure-sensitive adhesive sheet, or the like; a sprayer or a transfer roller for applying a resin material, paint, varnish, rubber, adhesive, a pressure-sensitive adhesive, or the like; or a stacker or a mounting device for applying a resin plate, a metal plate, or the like. The protective material may be transparent or translucent, or may be non-translucent or translucent. The semiconductor processing apparatus EA may also include a coating means for carrying out a coating step of coating the semiconductor body with a coating material. In this case, for example, in the above-described semiconductor processing apparatus EA, after the semiconductor body not coated with the coating material is placed on the support surface 52A, the coating means can coat the semiconductor body with the coating material before or after the marking means 10 applies the mark MK.

[0031] The other equipment EB or other equipment may be any equipment such as a cutting equipment, plating equipment, cleaning equipment, etching equipment, immersion equipment, oxide film forming equipment, nitriding equipment, grinding equipment, sandblasting equipment, polishing equipment, coating equipment, laminating equipment, sheet bonding equipment, surface treatment equipment, drilling equipment, bending equipment, inspection equipment, verification equipment, irradiation equipment, etc., and may compare a part of the individual recognition image IP with the whole of the external individual recognition image IP1, or compare the whole of the individual recognition image IP with a part of the external individual recognition image IP1, or compare the whole of the individual recognition image IP with the whole of the external individual recognition image IP1, to make a conformity judgment as to whether the semiconductor device SD that has been the subject of the image is a conforming product to be processed or a non-conforming product to be processed, or may compare the semiconductor device S that has been the subject of the image with the part of the external individual recognition image IP1, or compare the whole of the individual recognition image IP with the whole of the external individual recognition image IP1, The individual recognition image IP and the external individual recognition image IP1 may be moved or rotated relative to each other to determine the conformance or authenticity of the semiconductor device SD, or the magnification of the individual recognition image IP or the magnification of the external individual recognition image IP1 may be increased or decreased to determine the conformance or authenticity of the semiconductor device SD.When comparing the individual recognition image IP and the external individual recognition image IP1, the position and size of at least one of the fluorescent material FM, the luminous material NM, and the phosphorescent material PM may be dotted, and other features of the images may be captured and compared, such as the color of the light emitted from them, the intensity of the light, and the pattern formed by the light. At least one of the other device EB and the other device may or may not be included in the semiconductor processing apparatus EA of the present invention.

[0032] As shown by the symbols in parentheses in Figures 1(D) to (F), the semiconductor device SD has a predetermined mark MK applied to it using oil-based ink IK as a marking material, and may be formulated so that luminous material NM is interspersed within the oil-based ink IK, or may be formulated so that phosphorescent material PM is interspersed within the oil-based ink IK, or may be formulated so that fluorescent material FM and luminescent material NM are interspersed within the oil-based ink IK, or may be formulated so that fluorescent material FM and phosphorescent material PM are interspersed within the oil-based ink IK, or may be formulated so that luminous material NM and phosphorescent material PM are interspersed within the oil-based ink IK. The semiconductor device SD may have a coating material covering the entirety of one surface of the semiconductor body or only a portion of one surface, or may have a coating material covering the entirety of the other surface of the semiconductor body or only a portion of the other surface, or may have a coating material covering the entirety of both surfaces of the semiconductor body or only a portion of both surfaces, or the semiconductor body may not be coated with a coating material.

[0033] The marking material may be, for example, a liquid or gel material such as water-based ink, resin, paint, varnish, rubber, adhesive, or pressure-sensitive adhesive, in which at least one of a fluorescent material FM, a luminous material NM, and a phosphorescent material PM is interspersed, or a sheet material such as an adhesive sheet, adhesive tape, or pressure-sensitive adhesive sheet or tape in which at least one of a fluorescent material FM, a luminous material NM, and a phosphorescent material PM is interspersed, or any material in which at least one of a fluorescent material FM, a luminous material NM, and a phosphorescent material PM is interspersed. Note that when the marking material is a sheet material, a known sheet attachment device for attaching a sheet material to the semiconductor device SD can be used as the marking device for the marking means 10. The marking material may be transparent or translucent, or it may not be transparent or translucent. It may undergo a change specific to the predetermined energy when applied with a predetermined energy by the energy application means 20 or another energy application means equivalent to the energy application means 20, or it may not undergo a change specific to the predetermined energy. If the marking material undergoes a change specific to the predetermined energy when applied with a predetermined energy, the change specific to the predetermined energy may be any change, such as hardening, softening, shrinkage, expansion, evaporation, liquefaction, solidification, discoloration, oxidation, penetration, fixation, a decrease in adhesive strength or an increase in adhesive strength, and may be the same as or different from the change specific to the predetermined energy that the coating material undergoes when applied with a predetermined energy.

[0034] The fluorescent material FM may be particles of the same size or different sizes, particles of the same shape or different shapes, particles of the same weight or different weights, particles that emit light of the same color or particles that emit light of different colors, and particles of any shape, such as spherical, ellipsoidal, cubic, rectangular, cylindrical, cylindrical, truncated conical, pyramidal, conical, ring-shaped, or other shapes. The luminous material NM may be particles of the same size or different sizes, particles of the same shape or different shapes, particles of the same weight or different weights, particles that emit light of the same color or particles that emit light of different colors, and particles of any shape, such as spherical, ellipsoidal, cubic, rectangular, cylindrical, cylindrical, truncated conical, pyramidal, conical, ring-shaped, or other shapes. The phosphorescent material PM may be particles of the same size or different sizes, particles of the same shape or different shapes, particles of the same weight or different weights, particles that emit light of the same color or particles that emit light of different colors, and particles of any shape, such as spherical, ellipsoidal, cubic, rectangular, cylindrical, cylindrical, truncated conical, pyramidal, conical, ring-shaped, or other shapes. The size of the fluorescent material FM, luminous material NM and phosphorescent material PM may be 10 nm to 1 μm in maximum width, or may be any size, such as less than 10 nm or more than 1 μm, as long as the imaging means 30, other device EB or another device can form an individual recognition image IP or an external individual recognition image IP1 using at least one of the fluorescent material FM, luminous material NM and phosphorescent material PM. At least one of the fluorescent material FM, the luminous material NM and the phosphorescent material PM may be blended in a weight ratio of 0.01% to 1% of the weight of the marking material not including them, or may be blended in a weight ratio of 0.01% or less, or 1% or more, of the weight of the marking material not including them, as long as the imaging means 30, other device EB or another device can form an individual recognition image IP or an external individual recognition image IP1 using at least one of the fluorescent material FM, the luminous material NM and the phosphorescent material PM. The blending ratio of the fluorescent material FM, the luminous material NM and the phosphorescent material PM to the marking material may be determined by any standard, such as volume ratio or molar fraction, and may be blended in a predetermined ratio in a marking material containing at least one of the fluorescent material FM, the luminous material NM and the phosphorescent material PM. At least two of the fluorescent material FM, the luminous material NM, and the phosphorescent material PM may be the same size, or all of them may be different sizes, or at least two of them may be the same shape, or all of them may be different shapes, or at least two of them may be the same weight, or all of them may be different weights, or at least two of them may emit light of the same color, or all of them may emit light of different colors.

[0035] The coating material may be any material, such as an adhesive sheet, a pressure-sensitive adhesive sheet, a resin material, paint, varnish, rubber, adhesive, glue, resin, metal, etc., and may be coated on the semiconductor body after the mark MK is applied to the semiconductor body, or may not undergo a change specific to the specified energy applied by the energy application means 20. The change that the coating material undergoes when exposed to a predetermined energy may be any change, such as hardening, softening, shrinkage, expansion, evaporation, liquefaction, solidification, discoloration, oxidation, penetration, fixation, a decrease in adhesive strength, or an increase in adhesive strength, and may be the same as or different from the change that the marking material undergoes when exposed to a predetermined energy.

[0036] The individual recognition image IP and the external individual recognition image IP1 may be digital images of any format (type), such as JPEG format, PNG format, GIF format, Photoshop format, TIFF format, bitmap format, TARGA format, etc., or may be analog images of any type, such as film photographs or photosensitive photographs, or may be analog images converted into digital images, or digital images converted into analog images, or may be any images that can be individually recognized using at least one of the scattered fluorescent material FM, luminous material NM, and phosphorescent material PM, and the individual recognition image IP and the external individual recognition image IP1 may be the same type of image or different types of images.

[0037] The wafer WF may have an orientation reference portion such as an orientation flat, V-notch, coloring, hole, or protrusion that indicates the orientation, or it may not have an orientation reference portion, or it may have a circuit formed on one side, or it may have a circuit formed on the other side, or it may have a circuit formed on both one side and the other side, or it may not have a circuit formed on either one side or the other side. The chip CP may be formed by cutting the wafer WF along a cut line CL, or may not be formed by cutting along a cut line CL; it may have an orientation reference portion such as an orientation flat, V-notch, coloring, hole or protrusion indicating the orientation, or it may not have an orientation reference portion; it may have a circuit formed on one side, or a circuit surface formed on the other side; it may have a circuit formed on both one side and the other side, or it may not have a circuit formed on both one side and the other side. The semiconductor device SD as shown in Figures 1(B) and (J) may be cut along the cut line CL to produce a semiconductor device SD in which an adhesive sheet AS is attached to a chip CP as shown in Figure 1(G), for example, or it may not be cut. The semiconductor device SD as shown in FIG. 1(I) may be cut along the cut line CL to form a semiconductor device SD that is not covered with a covering material, or may not be cut.

[0038] The materials, types, shapes, etc. of the semiconductor device, semiconductor body, marking material, mark, fluorescent material, luminous material, phosphorescent material, covering material, and protective material in the present invention are not particularly limited. For example, the semiconductor device, semiconductor body, marking material, mark, fluorescent material, luminous material, phosphorescent material, covering material, and protective material may be circular, elliptical, polygonal such as triangular or rectangular, or other shapes, and the covering material and protective material may be pressure-sensitive adhesive, heat-sensitive adhesive, or other adhesive. When a heat-sensitive adhesive is used, it may be attached to the semiconductor device in an appropriate manner, such as by providing a heating means such as a coil heater or the heated side of a heat pipe that heats the heat-sensitive adhesive. Furthermore, when adhesive sheets or pressure-sensitive adhesive sheets are used as marking materials, covering materials, and protective materials, these adhesive sheets or pressure-sensitive adhesive sheets may be, for example, a single layer consisting of only an adhesive layer or pressure-sensitive adhesive layer, a two-layer structure consisting of a substrate and an adhesive layer or a substrate and a pressure-sensitive adhesive layer, a three-layer structure or more consisting of one or more intermediate layers laminated between the substrate and the adhesive layer or between the substrate and the pressure-sensitive adhesive layer, a three-layer structure or more consisting of one or more cover layers laminated on the top surface of the substrate, a structure in which the substrate, intermediate layer, or cover layer are provided in a peelable manner, a double-sided adhesive sheet or double-sided pressure-sensitive adhesive sheet consisting of only an adhesive layer or pressure-sensitive adhesive layer, a double-sided adhesive sheet or double-sided pressure-sensitive adhesive sheet in which an adhesive layer or pressure-sensitive adhesive layer is laminated on both outermost surfaces of one or more intermediate layers, etc. Furthermore, examples of semiconductor bodies include, for example, silicon semiconductor wafers, compound semiconductor wafers, diamond semiconductor wafers, silicon semiconductor chips, compound semiconductor chips, diamond semiconductor chips, etc. The covering material and the protective material may be, for example, any sheet, film, tape, etc., such as an information label, a decorative label, a protective sheet, a dicing tape, a die attach film, a die bonding tape, or a recording layer forming resin sheet, and may be larger, smaller, or the same size as the semiconductor body.

[0039] The driving equipment in the above embodiments may be electric equipment such as rotary motors, linear motors, single-axis robots, so-called articulated robots with joints on two or three or more axes, actuators such as air cylinders, hydraulic cylinders, rodless cylinders and rotary cylinders, which may be used alone, or may be a direct or indirect combination of such electric equipment and actuators, or may be electric equipment, actuators, etc. that are capable of torque control, speed control, etc. for the output parts of such electric equipment, actuators, etc., or may not be capable of torque control, speed control, etc.

[0040] In the above-described embodiments, there is a certain object (hereinafter referred to as "object A") and an object (hereinafter referred to as "object B") that moves relative to object A. In other words, object A and object B that move relatively may be such that object B moves relative to object A, which is stationary, or object A may move relative to object B, which is stationary, or both object A and object B may move. As long as the result achieved by the movement is the same, either object A or object B may move. When a supporting (holding) means or a supporting (holding) member that supports (holds) a supported member (held member) is used, a configuration may be adopted in which the supported member is supported (held) by a gripping means such as a chuck motor or a chuck cylinder, Coulomb force, an adhesive (adhesive sheet, adhesive tape), a pressure sensitive adhesive (adhesive sheet, adhesive tape), a magnetic force, Bernoulli adsorption, suction adsorption, a driving device, or the like. [Explanation of symbols]

[0041] EA: Semiconductor processing equipment 10...Marking means 20...Energy imparting means 30...imaging means 40...Light intensity adjustment means AS...Adhesive sheet (covering material) CP: Semiconductor chip (semiconductor body) EB...Other devices FM: fluorescent material HA...Heat (prescribed energy) IK...Oil-based ink (marking material) IP: Individually recognized image MK...mark NM… Luminous material PM: Luminous material SD: Semiconductor device WF: Semiconductor wafer (semiconductor body)

Claims

1. A semiconductor processing apparatus having a marking means for applying a predetermined mark to a semiconductor device using a marking material, The semiconductor processing apparatus is characterized in that the marking means applies the predetermined mark to the semiconductor device using the marking material which is mixed so that at least one of a fluorescent material, a luminous material, and a phosphorescent material is scattered therein.

2. The semiconductor device is configured such that a semiconductor body is coated with a coating material that causes a change specific to the given energy when a given energy is applied, 2. The semiconductor processing apparatus according to claim 1, further comprising an energy applying means for applying the predetermined energy to the coating material.

3. 3. The semiconductor processing apparatus according to claim 1, further comprising an imaging means for imaging the predetermined mark to form an individual recognition image that can be individually recognized using at least one of the fluorescent material, the luminous material, and the phosphorescent material, and outputting the individual recognition image to another device.

4. 4. The semiconductor processing apparatus according to claim 3, further comprising a light intensity adjusting means for adjusting the light intensity of the periphery of the predetermined mark when the predetermined mark is imaged by the imaging means.

5. 1. A semiconductor processing method comprising: a marking step of applying a predetermined mark to a semiconductor device using a marking material, A semiconductor processing method characterized in that in the marking step, the predetermined mark is applied to the semiconductor device using the marking material that is mixed so that at least one of a fluorescent material, a luminous material, and a phosphorescent material is scattered therein.

6. In a semiconductor device on which a predetermined mark is provided by a marking material, The semiconductor device is characterized in that the marking material contains at least one of a fluorescent material, a luminous material, and a phosphorescent material dispersed therein.

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