Photoelectric conversion device, photovoltaic device, and manufacturing method for photoelectric conversion device

Abstract

To improve the conversion efficiency of an optical rectenna as a photoelectric conversion device, and thereby enhance overall power generation efficiency.SOLUTION: The photoelectric conversion device includes an emitter electrode that receives incident light and emits electrons, an anode electrode that absorbs electrons, an insulator that supports the emitter electrode and the anode electrode, and a fixed charge portion that generates an electric field to provide a potential that causes electrons to fly out from the emitter electrode toward the anode electrode.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a photovoltaic device, a photovoltaic power generation device, and a method for manufacturing a photovoltaic device. [Background technology]

[0002] A rectenna (rectifier + antenna) is a conventionally known element that converts internal oscillations of an electric field generated by electromagnetic waves captured by an antenna into electric current by rectifying them using a diode. Among these rectennas, there is an optical rectenna that operates in the optical frequency band and utilizes the wave properties of light. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-111721 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, rectennas that convert radio waves (microwaves) into electricity have achieved a conversion efficiency of 90%, making it possible to transmit power over long distances using radio waves. Furthermore, so-called solar cells, which utilize the energy of light, have a conversion efficiency of about 20%. However, optical rectennas are currently in the research stage, and the conversion efficiency has not yet reached 1%.

[0005] The present invention has been made in consideration of the above, and aims to provide a photoelectric conversion device, a photovoltaic power generation device, and a method for manufacturing a photoelectric conversion device that can improve the conversion efficiency of an optical rectenna as a photoelectric conversion device, and ultimately improve power generation efficiency. [Means for solving the problem]

[0006] The photoelectric conversion device of the embodiment includes an emitter electrode that receives incident light and emits electrons, an anode electrode that absorbs electrons, an insulator that supports the emitter electrode and the anode electrode, and a fixed charge portion that generates an electric field to give the electrons a potential that causes them to jump out of the emitter electrode and move toward the anode electrode. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating the principle of an optical rectenna power supply system. [Figure 2] FIG. 2 is a diagram illustrating the principle and configuration of an optical rectenna. [Figure 3] FIG. 3 is a perspective view of the appearance of the optical rectenna according to the first embodiment. [Figure 4] FIG. 4 is a flowchart of the manufacturing process of the optical rectenna. [Figure 5] FIG. 5 is a diagram illustrating the manufacturing process of the optical rectenna. [Figure 6] FIG. 6 is a diagram illustrating the operation of the embodiment. [Figure 7] FIG. 7 is an explanatory diagram of the first modified example. [Figure 8] FIG. 8 is a perspective view of the appearance of the second modified example. [Figure 9] FIG. 9 is an explanatory diagram of an optical rectenna array according to the first modified example, in which n×m optical rectennas are connected in series and parallel to be used for the same purpose as a solar cell. [Figure 10] FIG. 10 is a perspective view illustrating the outline of the configuration of the optical rectenna array having a three-layer structure according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] FIG. 1 is a diagram illustrating the principle of an optical rectenna power supply system. The optical rectenna power supply system 10 includes an optical rectenna 11 or an optical rectenna array 11AR, a DC / DC converter 12, and a storage battery unit 13. Note that the system may also include a group of circuit elements such as a bandpass filter (not shown).

[0009] The optical rectenna 11 receives electromagnetic waves in the optical frequency band and performs photoelectric conversion by utilizing the wave properties of the electromagnetic waves. The optical rectenna array 11AR performs photoelectric conversion by arranging optical rectennas 11 in an array.

[0010] Here, the basic configuration of the optical rectenna will be explained. FIG. 2 is a diagram illustrating the principle and configuration of an optical rectenna. The optical rectenna 11 is a quarter-wave antenna that includes an antenna section 11A that receives light having a predetermined wavelength, such as visible light or infrared light, and performs photoelectric conversion on the received light; a diode 11B that rectifies the current photoelectrically converted by the antenna section 11A; a circuit element group 11C that is provided in front of the diode 11B and includes capacitance and the like (not shown) for extracting a direct current; and a circuit element group 11D that is provided in back of the diode 11B and includes capacitance and the like (not shown) for extracting a direct current.

[0011] That is, antenna portion 11A of optical rectenna 11 receives light having a predetermined wavelength, such as visible light or infrared light, and performs photoelectric conversion to continuously generate a current. The current generated thereby is supplied to the diode 11B via the circuit element group 11C and the circuit element group 11D, rectified by the diode 11B, and output as a direct current via the terminals T1 and T2.

[0012] The DC / DC converter 12 performs DC / DC conversion on the output power output from the optical rectenna 11 or the optical rectenna array 11AR via the terminals T1 and T2, and outputs it as DC power having a predetermined DC voltage. The storage battery unit 13 stores the DC power output by the DC / DC converter and supplies it to the connected load LD.

[0013] [1] First embodiment FIG. 3 is a perspective view of the appearance of the optical rectenna according to the first embodiment. Optical rectenna 11 includes emitter electrode 21, anode electrode 22, insulator 23, fixed charge portion 24, buried power supply wiring 25, and substrate 26.

[0014] The emitter electrode 21 functions as an antenna, receives incident light, and converts it into electrons (e - ) is emitted to the anode electrode 22 side.

[0015] In this case, both end portions of the emitter electrode 21 are gradually tapered toward the tip, with a small radius of curvature at the tip (i.e., pointed tip) to facilitate field emission, and are shaped to facilitate electric field concentration. For example, the central portion may be prismatic or plate-shaped, and the both end portions may be pyramidal or conical. Alternatively, the central portion may be prismatic or plate-shaped, and the both end portions may be triangular in plan view, with the overall shape in plan view being hexagonal or parallelogrammatic.

[0016] The length of the emitter electrode 21 is determined by the wavelength of the light to be photoelectrically converted, but is approximately 200 nm or less. For example, the wavelength of yellow, which is relatively bright among sunlight, is approximately 500 nm, so the quarter wavelength is approximately 125 nm, and the length of the emitter electrode 21 is also approximately 125 nm. The wavelength of blue is 400 nm or less, so the length of the emitter electrode 21 is approximately 100 nm or less. The wavelength of red is approximately 800 nm, so the length of the emitter electrode 21 is approximately 200 nm or less.

[0017] The anode electrode 22 absorbs the electrons emitted from the emitter electrode 21 . In this case, the anode electrode 22 is disposed at a position spaced apart from the tip of the emitter electrode by, for example, about 20 nm. The insulator 23 supports the emitter electrode 21 and the anode electrode 22 .

[0018] The fixed charge portion 24 is formed at a predetermined position on the insulator 23 and generates an electric field that provides a potential for electrons to fly out of the emitter electrode 21 and move toward the anode electrode 22 . In this case, the predetermined position where the fixed charge portion 24 is formed is the position where the electrons e emitted from the emitter electrode 21 - Along the path toward the anode electrode 22, an electric field generated by the fixed charge portion 24 on the side of the path causes the electrons e - are located in a position sufficient to affect the release of

[0019] Furthermore, it is provided at a predetermined distance from the emitter electrode 21 in the direction from the emitter electrode 21 to the anode electrode 22. For example, it is located at a position about 10 nm away from the tip of the emitter electrode in the direction from the emitter electrode 21 to the anode electrode 22. The buried power supply wiring 25 supplies electrons to the emitter electrode 21, which functions as an antenna, so as to compensate for the electrons emitted by the emitter electrode 21 and lost.

[0020] Substrate 26 is made of glass, resin, silicon, or the like, and supports emitter electrode 21, anode electrode 22, insulator 23, fixed charge portion 24, and buried power supply wiring 25, while maintaining the mechanical strength of optical rectenna 11.

[0021] Here, the manufacturing procedure of the optical rectenna will be described. FIG. 4 is a flowchart of the manufacturing process of the optical rectenna. FIG. 5 is a diagram illustrating the manufacturing process of the optical rectenna. First, a substrate 26 made of glass, resin, silicon, or the like is prepared (step S11).

[0022] Next, an SiO2 layer is formed as the insulator 23 on the surface of the substrate 26 by a CVD (Chemical Vapor Deposition) method, a coating method, or a PVD (Physical Vapor Deposition) method (step S12). In this case, the thickness of the SiO2 layer as the insulator 23 is, for example, about 1 μm.

[0023] Next, a photoresist PR is applied to the surface of the SiO2 layer serving as the insulator 23, and is exposed and developed in a predetermined pattern to mask areas other than the area where the fixed charge portion 24 is to be formed (step S13). Next, elements such as C (carbon) and N (nitrogen) are ionized by ion implantation, and are accelerated and implanted by applying a voltage, and are implanted as impurities into the SiO2 layer serving as the insulator 23, thereby forming the fixed charge portion 24 as shown in FIG. 5(A) (step S14).

[0024] Next, the photoresist PR is removed by oxygen asher or chemical treatment (step S15).

[0025] Next, the buried power supply wiring 25 is formed (step S16). Specifically, a photoresist PR is applied to an SiO2 layer as an insulator 23 including a fixed charge portion 24, and a predetermined pattern is exposed and developed to form a groove having a shape corresponding to the pattern of the buried power supply wiring by RIE (Reactive Ion Etching).

[0026] Thereafter, the photoresist is removed, metal is embedded, and the surface is flattened by CMP (Chemical Mechanical Polishing), thereby forming the buried power supply wiring 25 as shown in FIG. 5(B).

[0027] Next, an emitter electrode 21 as an antenna and an anode electrode 22 as a power receiving electrode are formed (step S17). At this time, the emitter electrode 21 and the anode electrode 22 as a receiving electrode are formed so that the fixed charge portion 14 is located at a position along the path of electrons emitted from the emitter electrode 21 toward the anode electrode 22, either to the side of the path or on the path between the position where the emitter electrode 21 is formed and the position where the anode electrode 22 is formed. Specifically, first, a metal film for forming the emitter electrode 21 and the anode electrode 22 is formed.

[0028] The metal used to form the emitter electrode 21 as an antenna or the anode electrode 22 as a power receiving electrode is tungsten (W), titanium (Ti), molybdenum (Mo), gold (Au), nickel (Ni), niobium (Nb), etc. In this case, it is also possible to use a metal containing nitrogen (N) or carbon (C) in its composition.

[0029] Next, a photoresist is formed, and the metal film is removed by RIE except for the portions where the emitter electrode 21 as an antenna and the anode electrode 22 as a power receiving electrode are formed, and then the photoresist is removed. As a result, an emitter electrode 21 serving as an antenna and an anode electrode 22 serving as a power receiving electrode are formed.

[0030] The above description is for the case where the emitter electrode 21 as an antenna and the anode electrode 22 as a power receiving electrode are formed simultaneously, but it is also possible to form them separately.

[0031] Subsequently, as shown in FIG. 5C, a tunnel insulating film TI that protects the electrode tip without exposing it is formed by CVD or ALD (Atomic Layer Deposition) (step S18).

[0032] In this case, it is also possible to laminate the tunnel insulating film TI thickly so that it also serves as a protective film. As will be described later, it is also possible to avoid forming the tunnel insulating film depending on the subsequent process.

[0033] Next, a passivation film is formed (step S19). This passivation film provides mechanical protection and moisture protection for the optical rectenna. Therefore, when a tunnel insulating film TI is formed and the space between the emitter electrode 21 as an antenna and the anode electrode 22 as a power receiving electrode is filled as shown in FIG. 5(C), a passivation film PV is formed by a PE-CVD (Plasma Enhanced Chemical Vapor Deposition) method or the like as shown in FIG. 5(D1).

[0034] Furthermore, if no tunnel insulating film TI is provided, it is also possible to attach another optically transparent substrate to the surface, or to attach a passivation film PVF to the surface as shown in Figure 5(D2).

[0035] Furthermore, although not mentioned in the above explanation, it is also possible to configure the system so that cleaning, heat treatment, etc. are carried out as appropriate between each process.

[0036] FIG. 6 is a diagram illustrating the operation of the embodiment. As shown in FIG. 6, when light L of a predetermined wavelength is incident on the emitter electrode 21 that functions as an antenna in the optical rectenna 11, free electrons e - is subjected to a force from the electric field of the light.

[0037] This causes electron e - reaches a state in which it can emit electrons from the tips (both ends) 21A of the emitter electrodes 21 in the direction of the anode electrodes 22 located in the opposing positions (to the right in the example of FIG. 6).

[0038] In this state, a fixed charge portion 24 is formed in the vicinity of the tip 21A of the emitter electrode 21 at a predetermined distance in the direction in which the anode electrode 22 is provided, and since the potential there is a positive potential, electrons e - Therefore, compared to when the fixed charge portion 24 is not provided, the emission efficiency is increased, and more electrons e - is released, which in turn increases the effective photoelectric conversion rate.

[0039] Then, electrons e emitted from the tip 21A of the emitter electrode 21 - reaches the anode electrode 22, where photoelectric conversion is completed. The output direct current of optical rectenna 11 is supplied to DC / DC converter 12 via terminals T1 and T2.

[0040] The DC / DC converter 12 performs DC / DC conversion on the input power and outputs to the storage battery unit 13 DC power having a predetermined DC voltage that can charge the storage battery unit 13 . As a result, the storage battery unit 13 stores the DC power output by the DC / DC converter and supplies it to the connected load LD.

[0041] As described above, according to this embodiment, in the optical rectenna, it is possible to reduce the electromotive force required for field emission, to more easily induce field emission, and to improve photoelectric conversion efficiency. As a result, it is possible to obtain an optical rectenna, which is a photovoltaic element capable of generating electricity with high efficiency.

[0042] [1.1] First variant FIG. 7 is an explanatory diagram of the first modified example. In the above description of the first embodiment, the fixed charge portion 24 is the electrons e emitted from the tip 21A of the emitter electrode 21. - was provided along the path toward the anode electrode 22, but in the first modified example, the emitter electrode 21, the anode electrode 22, and the fixed charge portion 24 are embedded in the insulator 23, and the fixed charge portion 24 is provided between the emitter electrode 21 and the anode electrode 22 at a position facing the tip 21A of the emitter electrode 21.

[0043] According to this configuration, as shown in FIG. 7, when light L of a predetermined wavelength is incident on the emitter electrode 21 that functions as an antenna in the optical rectenna 11, free electrons e -are subjected to the force from the electric field of the light, move toward the tips (both ends) 21A of the emitter electrode 21, and are concentrated at the tips 21A. - reaches a state in which it can be emitted in the direction of the fixed charge portion 24 located at the opposite position from each tip (both ends) 21A of the emitter electrode 2 (to the right in the example of FIG. 7).

[0044] In this state, a fixed charge portion 24 having a positive potential is formed at the end of the anode electrode 22 at a position spaced a predetermined distance from the emitter electrode 21, so that electrons e - Therefore, compared to when the fixed charge portion 24 is not provided, the emission efficiency is increased, and more electrons e - The electrons e emitted from the tip 21A of the emitter electrode 21 are - passes through the fixed charge portion 24 and finally reaches the anode electrode 22, where photoelectric conversion is completed.

[0045] As explained above, according to the first modification, in the optical rectenna, it is also possible to reduce the electromotive force required for field emission, to more easily induce field emission, and to improve photoelectric conversion efficiency. As a result, it is possible to obtain an optical rectenna, which is a photovoltaic element capable of generating electricity with high efficiency.

[0046] [1.2] Second variant In the above description of the first embodiment, one optical rectenna has been described, but it is also possible to simultaneously form a plurality of optical rectennas using the same process as described above.

[0047] FIG. 8 is a perspective view of the appearance of the second modified example. In FIG. 8, the same parts as those in FIG. 3 are denoted by the same reference numerals. As shown in FIG. 8, it is also possible to configure an optical rectenna array 11AR by arranging a plurality of antennas two-dimensionally.

[0048] The example of FIG. 8 shows a case where an optical rectenna array 11AR is configured having eight emitter electrodes 21-11 to 21-14, 21-21 to 21-24. The optical rectenna array 11AR includes emitter electrodes 21-11 to 21-14, 21-21 to 21-24, a pair of anode electrodes 22A and 22B, a common anode electrode 22C, an insulator 23, a fixed charge portion 24, a buried power supply wiring 25, and a substrate . In the example of Figure 8, for ease of understanding, a pair of anode electrodes 22A, 22B and a common anode electrode 22C are described; however, when actually constructing the optical rectenna array 11AR, an infinite number of emitter electrodes functioning as emitter electrode 21 and anode electrodes functioning as anode electrodes 22A, 22B or common anode electrode 22C will be arranged on a plane.

[0049] The emitter electrodes 21-11 to 21-14 function as antennas and are formed between the anode electrode 22A and the common anode electrode 22C. They receive incident light and convert it into electrons (e - ) is emitted toward the anode electrode 22A side and the common anode electrode 22C side.

[0050] Similarly, the emitter electrodes 21-21 to 21-24 function as antennas, and are formed between the anode electrode 22B and the common anode electrode 22C. They receive incident light and convert it into electrons (e - ) is emitted toward the anode electrode 22B side and the common anode electrode 22C side.

[0051] In this case, both end portions of the emitter electrodes 21-11 to 21-14 and 21-21 to 21-24 are gradually tapered to facilitate field emission.

[0052] The anode electrodes 22A, 22B and the common anode electrode 22C absorb electrons emitted from the emitter electrodes 21-11 to 21-14, 21-21 to 21-24. In this case, the anode electrodes 22A, 22B and the common anode electrode 22C are disposed at positions spaced apart from the tips of the emitter electrodes 21-11 to 21-14 and 21-21 to 21-24 by, for example, about 20 nm. The insulator 23 supports the emitter electrodes 21-11 to 21-14, 21-21 to 21-24, the anode electrodes 22A and 22B, and the common anode electrode 22C.

[0053] The configurations of the fixed charge portion 24, the buried power supply wiring 25, and the substrate 26 are the same as those in the first embodiment, and therefore the detailed description thereof will be used.

[0054] FIG. 9 is an explanatory diagram of an optical rectenna array according to the first modified example, in which n×m optical rectennas are connected in series and parallel to be used for the same purpose as a solar cell. The optical rectenna array 11AR1 includes n×m optical rectennas, ie, optical rectennas 11-11 to 11-1m, 11-21 to 11-2m, . . . , 11-n1 to 11-nm.

[0055] Optical rectennas 11-11 to 11-1m constituting the first optical rectenna group are m optical rectennas connected in series. Similarly, optical rectennas 11-21 to 11-2m, . . . , 11-n1 to 11-nm constituting the second to n-th optical rectenna groups each have m optical rectennas connected in series. Furthermore, the first to nth optical rectenna groups are connected in parallel to one another.

[0056] As a result, the output voltage appearing between the output terminals Tout1 and Tout2 of the optical rectenna array 11AR1 is the voltage of the power generated by each optical rectenna group, that is, a voltage proportional to the number of optical rectennas connected in series in the optical rectenna group. Moreover, the output current appearing between the output terminals Tout1 and Tout2 of the optical rectenna array 11AR1 is proportional to the number of optical rectenna groups.

[0057] Therefore, by determining the number of optical rectennas in series and the number of optical rectenna groups in parallel between the output terminals Tout1 and Tout2 according to the required output voltage and output current, the desired optical rectenna array 11AR1 can be constructed, similar to a solar cell panel or solar power generation system.

[0058] [2] Second embodiment Next, a second embodiment will be described. The first embodiment described above was an optical rectenna device that is sensitive to a specific wavelength, but the second embodiment is an optical rectenna device that is sensitive to light with different wavelengths or polarization planes and has antennas with different lengths or extension directions.

[0059] The optical rectenna device of this second embodiment is characterized in that antennas of different lengths that are sensitive to different wavelengths are provided on different layers, or that antennas corresponding to light with different polarization planes are provided on layers with different extension directions.

[0060] FIG. 10 is a perspective view illustrating the outline of the configuration of the optical rectenna array having a three-layer structure according to the second embodiment. In FIG. 10, the same parts as those in FIG. 9 are denoted by the same reference numerals, and the detailed description thereof is cited.

[0061] In FIG. 10, the second layer L2 and the third layer L3 have the same configuration as the first layer L1, but for ease of understanding, only the antennas are shown. The optical rectenna array 11AR1 has a first layer L1, a second layer L2, and a third layer L3 stacked on a substrate 26 from top to bottom in FIG. Here, the first layer L1, the second layer L2, and the third layer L3 each function as a photoelectric conversion layer.

[0062] The first layer L1 has the same configuration as the modified example of the first embodiment. The second layer L2 is provided with emitter electrodes 31-1 to 31-4 extending in a direction perpendicular to the extending direction of the emitter electrodes 21-11 to 21-14 and 21-21 to 21-24 (functioning as antennas) provided on the first layer L1. As a result, the emitter electrodes 21-11 to 21-14 and 21-21 to 21-24 on the first layer L1 are configured as antennas highly sensitive to light having a polarization plane perpendicular to the polarization plane of light received.

[0063] The third layer L3 is provided with emitter electrodes 41-11, 41-12, 41-21, and 41-22 that extend in the same direction as, but have lengths different from, the emitter electrodes 21-11 to 21-14 and 21-21 to 21-24 (functioning as antennas) provided on the first layer L1. As a result, the third layer L3 is configured as an antenna that is highly sensitive to light of a wavelength different from the wavelength of light received by the emitter electrodes 21-11 to 21-14 and 21-21 to 21-24 on the first layer L1.

[0064] By adopting such a configuration, it becomes possible to perform photoelectric conversion using light having various polarization directions or light having various wavelengths, and photoelectric conversion can be performed with high efficiency when the effective photoelectric conversion area of ​​the optical rectenna array 11AR1 is the same. Therefore, it is possible to easily construct a large-scale photovoltaic power generation system with improved power generation efficiency per installation area.

[0065] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0066] 10 Optical rectenna power supply system 11 Optical rectenna (photovoltaic device) 11A Antenna section 11AR, 11AR1 Optical Rectenna Array (Photovoltaic Device) 11B Diode 12 DC / DC converters 13 Battery unit 14 Fixed charge section 16 boards 21 Emitter electrode 21A (emitter electrode) tip 22, 22A, 22B Anode electrodes 22C Common anode electrode 23 Insulators 24 Fixed charge section 25 Buried power supply wiring 26 PCB 31 Emitter electrode 41 Emitter electrode 90 Conversion efficiency L light L1 1st layer (photoelectric conversion layer) L2 Second layer (photoelectric conversion layer) L3 3rd layer (photoelectric conversion layer) LD load PR Photoresist PV passivation film PVF Passivation Film TI tunnel insulating film Tout1, Tout2 output terminals

Claims

1. an emitter electrode that receives incident light having a predetermined wavelength and emits electrons; an anode electrode that absorbs the electrons; an insulator supporting the emitter electrode and the anode electrode; a fixed charge portion that generates an electric field for applying a potential to the electrons so that they fly out of the emitter electrode and move toward the anode electrode; A photoelectric conversion device comprising:

2. the fixed charge portion is formed at a predetermined position on or in the insulator; The photoelectric conversion device according to claim 1 .

3. the predetermined position is located to the side of a path along which electrons emitted from the emitter electrode travel toward the anode electrode, or on the path between the emitter electrode and the anode electrode. The photoelectric conversion device according to claim 2 .

4. an emitter electrode that receives incident light having a predetermined wavelength and emits electrons; an anode electrode that absorbs the electrons; and an insulator that supports the emitter electrode and the anode electrode; a fixed charge portion that generates an electric field for applying a potential to the electrons so that the electrons fly out of the emitter electrode and move toward the anode electrode; the lengths of the emitter electrodes corresponding to the photoelectric conversion layers are set so that the wavelengths are different for each of the photoelectric conversion layers; Photoelectric conversion device.

5. an emitter electrode that receives incident light having a predetermined wavelength and emits electrons; an anode electrode that absorbs the electrons; and an insulator that supports the emitter electrode and the anode electrode; a fixed charge portion that generates an electric field for applying a potential to the electrons so that the electrons fly out of the emitter electrode and move toward the anode electrode; The orientation of the emitter electrodes between the photoelectric conversion layers is set to correspond to the polarization plane of the light to be received in each of the photoelectric conversion layers. Photoelectric conversion device.

6. A photoelectric conversion device according to any one of claims 1 to 5, The plurality of photoelectric conversion devices are connected in series, in parallel, or in series-parallel. Photovoltaic device.

7. A method for manufacturing a photoelectric conversion device including an emitter electrode that receives incident light having a predetermined wavelength and emits electrons, an anode electrode that absorbs the electrons, and an insulator that supports the emitter electrode and the anode electrode, comprising: forming a fixed charge portion on the insulator; forming the emitter electrode and the anode electrode so that the fixed charge portion is located at a position along a path of electrons emitted from the emitter electrode toward the anode electrode, to the side of the path, or on the path between a position where the emitter electrode is formed and a position where the anode electrode is formed; A method for manufacturing a photoelectric conversion device comprising:

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