Semiconductor light-emitting device and manufacturing method thereof

Abstract

To provide a semiconductor light-emitting device having high adhesion between a lead frame and a sealing resin and high reliability, and a manufacturing method thereof.SOLUTION: A resin frame is placed on the top of a first lead electrode and a second lead electrode, which are arranged on the same plane with a gap between them, to form a housing. The upper surfaces of the first lead electrode and the second lead electrode form the bottom surface of a recess surrounded by the frame. The light-emitting element is bonded onto the second lead electrode within the recess. A first sealing member is in contact with the bottom surface of the recess around the light-emitting element and the inner wall surface of the frame. The second sealing member covers the light-emitting element and the first sealing member, filling the recess. The resin that forms the frame extends into the gap between the first lead electrode and the second lead electrode, filling the gap. The upper surface of the resin filling the gap is covered with the first sealing member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light emitting device having a structure in which a semiconductor light emitting element is fixed on a lead frame with an adhesive member and the periphery is sealed with resin. [Background technology]

[0002] A semiconductor light emitting device having a structure in which a semiconductor light emitting element and a resin frame body that surrounds the periphery of the semiconductor light emitting element are mounted on a lead frame, and the space surrounded by the frame body and containing the semiconductor light emitting element is sealed with sealing resin is known from Patent Documents 1 and 2. A semiconductor light emitting device with this structure has a problem in that the lead frame is easily separated from the frame body and sealing resin.

[0003] Therefore, Patent Document 1 discloses that a recess is provided around the area of ​​the lead frame where the semiconductor light-emitting element is mounted and on the inner periphery of the frame, and that resin is filled into the recess to improve adhesion between the lead frame and the frame and sealing resin.

[0004] Furthermore, Patent Document 2 discloses a structure in which a frame is formed by transferring a thermosetting resin, in which a notch is provided in the lead frame to improve adhesion between the thermosetting resin and the lead frame. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-182215 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-62272 Summary of the Invention [Problem to be solved by the invention]

[0006] In the technologies of Patent Documents 1 and 2, the lead frame and the frame are in close contact when a resin frame is formed on the lead frame. However, when physical stress is applied to the lead frame due to bonding of a light-emitting element to the lead frame or wire bonding, the lead frame and the resin frame may separate. When the lead frame and the resin frame separate, corrosive gases such as nitrogen oxides and sulfur oxides contained in the atmosphere may pass through the gap between the lead frame and the frame, reach the light-emitting element and bonding wires in the light-emitting device, and corrode them.

[0007] An object of the present invention is to provide a semiconductor light emitting device that has high adhesion between the lead frame and the sealing resin and is highly reliable, and a method for manufacturing the same. [Means for solving the problem]

[0008] To achieve the above object, the semiconductor light-emitting device of the present invention includes a housing, a light-emitting element, a first sealing member, and a second sealing member. The housing includes a first lead electrode and a second lead electrode arranged on the same surface with a gap therebetween, and a resin frame arranged on the first lead electrode and the second lead electrode. The frame forms a recess surrounded by the frame, and the upper surfaces of the first lead electrode and the second lead electrode form the bottom surface of the recess. The light-emitting element is bonded to the second lead electrode in the recess via an adhesive member. The first sealing member is in contact with the bottom surface of the recess around the light-emitting element and with the inner wall surface of the frame. The second sealing member covers the light-emitting element and the first sealing member and fills the recess. The resin constituting the frame extends into the gap between the first lead electrode and the second lead electrode, filling the gap. The upper surface of the resin filling the gap forms part of the bottom surface of the recess. The upper surface of the resin filling the gap is covered with the first sealing member. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a semiconductor light emitting device having high adhesion between the lead frame and the sealing resin and high reliability, and a method for manufacturing the same. [Brief explanation of the drawings]

[0010] [Figure 1] (a) to (c) are a top view, a side view of the long side, and a side view of the short side of a semiconductor light-emitting device 1 according to an embodiment of the present invention, (d) and (e) are cross-sectional views taken along lines AA and BB, (f) is a top view with the sealing resin removed, and (g) is an enlarged view of the cross-sectional view taken along line BB. [Figure 2] 10(a) to 10(d) are a top view, a side view of the long side, a side view of the short side, and an AA cross-sectional view of the lead electrodes 10, 20 and the frame 40. [Figure 3] 3 is a flowchart showing a manufacturing process of the semiconductor light emitting device according to the embodiment. [Figure 4] 3(a) to 3(c) are diagrams illustrating the manufacturing process of the semiconductor light emitting device 1 according to the embodiment. [Figure 5] 3(a) to 3(c) are diagrams illustrating the manufacturing process of the semiconductor light emitting device 1 according to the embodiment. [Figure 6] 3(a) to 3(c) are diagrams illustrating the manufacturing process of the semiconductor light emitting device 1 according to the embodiment. [Figure 7] FIG. 2 is a cross-sectional view of a semiconductor light emitting device 1 according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] An embodiment of the present invention will be described based on examples. [Example]

[0012] First, the structure of the semiconductor light-emitting device 1 will be described with reference to Figures 1 and 2. Figures 1(a) to 1(c) are a top view, a side view of the long side, and a side view of the short side of the semiconductor light-emitting device 1, (d) and (e) are AA and BB cross-sectional views, (f) is a top view with the sealing resin removed, and (g) is an enlarged view of the BB cross-sectional view. In the following description, the upward facing surface in Figures 1(b) and 1(d) will be referred to as the upper surface, and the downward facing surface will be referred to as the lower surface.

[0013] The semiconductor light-emitting device 1 of the embodiment includes a housing 100, a light-emitting element 50, a first sealing member 70, and a second sealing member 80. The housing 100 includes a first lead electrode 10 and a second lead electrode 20 arranged on the same surface with a gap therebetween, and a resin frame 40 arranged on and around the first and second lead electrodes, and has a bathtub-shaped recess. The upper surfaces of the first lead electrode 10 and the second lead electrode 20 are exposed at the bottom of the recess of the housing 100. A protective element 51 and a light-emitting element 50 are mounted on the upper surfaces of the first lead electrode 10 and the second lead electrode 20, respectively. The first sealing member 70 is arranged to cover the protective element 51 and surround the light-emitting element 50. In other words, the first sealing member 70 is spaced apart from the light-emitting element 50. The second sealing member 80 covers the light-emitting element 50 and the first sealing member 70 and fills the recess.

[0014] Hereinafter, when there is no need to distinguish between the first lead electrode 10 and the second lead electrode, they will be referred to as lead electrodes 10, 20. When there is no need to distinguish between the first sealing member 70 and the second sealing member 80, they will be referred to as sealing members 70, 80.

[0015] (Housing) The housing 100 will be described with reference to Figures 1(a) to 1(f) and 2(a) to 2(d). In Figure 1(a), (b) is a side view of the long side, (c) is a side view of the short side, (d) is an AA cross-sectional view, and (e) is a BB cross-sectional view.

[0016] As shown in FIG. 2(a), the housing 100 has a rectangular shape with its long sides extending in the left-right direction (direction AA) and its short sides extending in the up-down direction (direction perpendicular to direction AA). Specifically, the first lead electrode 10 and the second lead electrode 20, each of which is substantially rectangular and flat when viewed from above, are spaced apart in the long-side direction with a gap 30 between them. The frame 40 is made of resin and is mounted along the peripheries of the lead electrodes 10 and 20 to form a rectangular recess surrounded by the frame 40, and also surrounds the side surfaces of the peripheries of the lead electrodes 10 and 20. The resin constituting the frame 40 extends to the gap 30 between the first lead electrode 10 and the second lead electrode 20, filling the gap 30 (in this embodiment, the resin extending into the gap 30 is also referred to as the frame 40). The resin frame 40 is formed by insert molding. That is, the lead electrodes 10, 20 and the frame 40 are a composite molded body (insert molded body) that constitutes the housing 100. The bottom surface of the recess in the housing 100 is a rectangular (oblong) plane from which part of the upper surfaces of the lead electrodes 10, 20 are exposed. As shown in FIG. 2(d), the inner wall surface 40d of the frame 40 is inclined so that the space within the recess expands upward. In addition, the upper end surface of the frame 40 is located higher than the upper surface of the light-emitting element 50.

[0017] The side surfaces of the lead electrodes 10, 20 in the long-side direction of the casing 100 are covered with a frame 40. Furthermore, protrusions 10b, 20b, which are the ends of the lead electrodes 10, 20, protrude outward from the short sides of the frame 40. Steps 10a, 20a are provided on the side surfaces of the lead electrodes 10, 20 in the long-side direction of the casing 100. The frame 40 is embedded in the steps 10a, 20a of the lead electrodes 10, 20. Therefore, the contact surface 40a between the lead electrodes 10, 20 and the frame 40 is composed of multiple surfaces, which improves the contact between the lead electrodes 10, 20 and the frame 40.

[0018] The first lead electrode 10 and the second lead electrode 20 are made of copper (Cu) as a base material, and electrode coatings of nickel (Ni) and gold (Au) are laminated on the surface of the base material in this order (the laminated electrode coatings will be hereinafter referred to as Ni / Au). The thermal expansion coefficient of Cu as a base material is 17.8 ppm°C. -1The hardness is 120HV (more than the maximum value of the Shore D range described later). The base material can be aluminum (Al) or iron (Fe)-nickel (Ni)-cobalt (Co) alloy. The electrode coating can be titanium (Ti) / Au, Ni / silver (Ag), Ti / Ag, etc.

[0019] The frame 40 is a light-reflective resin in which dimethyl silicone resin as a medium resin contains 10 wt % to 35 wt % of titanium oxide (TiO2) particles with a particle size of 200 nm to 300 nm as light-reflective particles. The thermal expansion coefficient of the dimethyl silicone resin used in this example is 212 ppm °C. -1 The hardness (JIS K 6253 durometer type A (Shore A)) is A65 to A78. The medium resin can be a dialkyl silicone resin, an epoxy resin, an acrylic resin, a polycarbonate resin, or the like. The light-reflective particles can be alumina (Al2O3), zirconia (ZrO2), high refractive index glass, or the like.

[0020] (light-emitting element) The light emitting element 50 is a semiconductor light emitting element (LED) having a rectangular shape when viewed from above, and includes a light emitting semiconductor layer in which an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are laminated in this order, and an element substrate supporting the light emitting semiconductor layer on one surface (lower surface) of the light emitting semiconductor layer. The light emitting element 50 also includes a pair of element electrodes connected to the n-type semiconductor layer and the p-type semiconductor layer, respectively, on the other surface (upper surface) of the light emitting semiconductor layer. The light emitting semiconductor layer is a gallium nitride (GaN)-based semiconductor crystal layer that emits blue light (e.g., wavelength 440 nm to 460 nm). The element substrate is an insulating sapphire crystal that transmits light emitted from the light emitting semiconductor layer.

[0021] The lower surface (lower surface of the element substrate) of the light emitting element 50 is bonded (die-bonded) to the upper surface of the second lead electrode 20 via an adhesive member 60. A pair of element electrodes of the light emitting element 50 are connected to the first lead electrode 10 and the second lead electrode 20 via Au bonding wires 90 and 91, respectively. Therefore, when a voltage is applied to the lead electrodes 10 and 20, the light emitting element 50 emits light from the upper and side surfaces.

[0022] The adhesive member 60 is larger than the bottom surface of the light-emitting element 50 and is provided so as to expose the side surfaces thereof. The adhesive member 60 is, for example, a light-reflective resin in which titanium oxide particles having a particle size of 1 nm to 500 nm are contained as light-reflective particles in a silsesquioxane (SQ)-based resin as a medium resin. Therefore, light traveling toward the bottom surface within the light-emitting element 50 is reflected toward the top surface by the adhesive member 60. Furthermore, light traveling toward the side surfaces within the light-emitting element 50 is not blocked by the adhesive member 60 and is emitted from the side surfaces of the light-emitting element 50.

[0023] (protective element) The protective element 51 is a protective element that protects the light-emitting element 50 from electrostatic breakdown and the like. The lower surface (lower surface electrode) of the protective element 51 is bonded to the upper surface of the first lead electrode 10 via a conductive resin. The upper surface electrode is connected to the second lead electrode 20 via an Au bonding wire 93. In other words, the protective element 51 of this embodiment is a vertically conductive Zener diode (ZD). Note that a capacitor, a varistor, or the like may also be used as the protective element 51.

[0024] (Sealing member) 1(a) and 6(c), the first sealing member 70 is provided so as to cover a recess outer edge boundary 41, which is a boundary (corner) between the upper surfaces of the lead electrodes 10, 20 exposed at the bottom surface of the recess of the casing 100 and the inner wall surface 40d of the frame body 40, and a recess gap boundary 42, which is a boundary between the gap 30 between the lead electrodes 10, 20 and the frame body 40 filling the gap 30. In other words, the first sealing member 70 is a sealing member that seals the boundary between the lead electrodes 10, 20 and the frame body 40 in the recess of the casing 100. Therefore, even if the lead electrodes 10, 20 and the frame body 40 are peeled off, the first sealing member 70 can still provide sealing.

[0025] For example, the first sealing member 70 on the long side where the inner wall surface 40d of the frame body 40 and the light emitting element 50 are close to each other is provided from the upper surface of the lead terminal 20 to the inner wall surface 40d of the frame body 40. The first sealing member 70 does not reach the outer edge of the adhesive member 60 (see FIG. 1(e)). That is, the bottom surface of the recess between the frame body 40 located on the short side of the bottom of the recess and the outer edge of the light emitting element 50 facing the short side of the frame body 40 is covered with the first sealing member 40 in the area closer to the frame body 40, but is not covered with the first sealing member 40 in the area closer to the light emitting element 50. Note that the first sealing member 40 may be configured to contact the outer edge of the adhesive member 60 (see FIG. 7). The thickness of the first sealing member 70 is configured to increase as it approaches the frame body 40 (see FIG. 1(d)). That is, the first sealing member 70 covers (seals) the recess outer edge boundary 41 and the recess gap boundary 42. Furthermore, the first sealing member 70 is arranged in a circular ring shape along the boundary between the lead electrodes 10, 20 around the light emitting element 50 and the inner wall surface 40d of the frame body 40, and bonds and seals the boundary between the lead electrodes 10, 20 and the inner wall surface 40d of the frame body 40. Therefore, the first sealing member 70 can relieve residual stress and external stress between the lead electrodes 10, 20 of the casing 100 and the frame body 40, preventing peeling of the contact surface 40a. In other words, the contact between the lead electrodes 10, 20 and the frame body 40 can be improved.

[0026] In particular, the contact surface 40c between the lead electrodes 10, 20 and the frame body 40 at the base of the protrusions 10b, 20b that protrude outward from the frame body 40, and the contact surface 40b between the opposing surfaces of the lead electrodes 10, 20 across the gap 30 and the frame body 40 in between, are all single flat surfaces. By covering the recess outer edge boundary 41 and the recess gap boundary 42 in this portion with the first sealing member 70 having a triangular cross section (see FIG. 1(d)), residual stress and external stress between the lead electrodes 10, 20 and the frame body 40 can be alleviated, and peeling of the contact surfaces 40b, 40c can be prevented.

[0027] The first sealing member 70 is a resin containing silsesquioxane (SQ)-based resin as a medium resin and titanium oxide particles with a particle size of 1 nm to 500 nm as aggregate particles (or light-reflective particles) that are harder than the SQ-based resin. The SQ-based resin has the composition formula [(RSiO 1.5 )n] (R: alkyl group, n: integer), and has intermediate hardness between inorganic silica [SiO2] and organic silicone [(R2SiO)n]. The thermal expansion coefficient of the SQ resin used in the example is 188 ppm °C. -1 The hardness (JIS K 6253 durometer type D (Shore D)) is D75. The thermal expansion coefficient of titanium oxide particles is 7 ppm °C. -1 ~9 ppm℃ -1 The hardness is 950 HV. The medium resin of the first sealing member 70 and the medium resin of the adhesive member 60 are the same silsesquioxane (SQ) resin, which has the advantage of reducing the number of types of resin used.

[0028] The hardness (D75) of the SQ resin medium of the first sealing member 70 is intermediate between the hardness (120 HV) of Cu, the base material of the lead electrodes 10 and 20, and the hardness (A65 to A78) of the dimethyl silicone resin of the frame body 40. In other words, the hardness of the medium resin of the first sealing member 70 is greater than the hardness of the resin of the frame body 40 but less than the hardness of the lead electrodes 10 and 20. This reduces residual stress and external stress between the lead electrodes 10 and 20 and the frame body 40, preventing peeling of the contact surfaces 40a, 40b, and 40c. In other words, the adhesion between the lead electrodes 10 and 20 and the frame body 40 can be improved.

[0029] In addition, the thermal expansion coefficient of the SQ resin, which is the medium resin of the first sealing member 70 (188 ppm °C -1 ) is the thermal expansion coefficient (17.8 ppm ° C) of Cu, which is the base material of the lead electrodes 10 and 20. -1 ) and the thermal expansion coefficient of the dimethyl silicone resin of the frame 40 (212 ppm ° C -1 ), which can alleviate stress caused by thermal fluctuations due to energization of the semiconductor light-emitting device 1 or environmental temperature, thereby preventing peeling of the contact surfaces 40a, 40b, and 40c. In other words, the contact between the lead electrodes 10 and 20 and the frame body 40 can be improved.

[0030] The medium resin of the first sealing member 70 may be an epoxy resin, an acrylic resin, a polycarbonate resin, or the like, which has a hardness and / or a thermal expansion coefficient similar to that of a silsesquioxane (SQ) resin.

[0031] Particles such as alumina (Al2O3), zirconia (ZrO2), and glass (SiO2) can be used as aggregate particles (or light-reflective particles) for the first sealing member 70. Ceramic particles, including titanium oxide particles, function as aggregates when mixed with SQ-based resin. This increases the hardness of the first sealing member 70 and reduces its thermal expansion coefficient, making it suitable as a co-bonding member (sealing member) that bonds to and seals both the lead electrodes 10, 20 and the frame 40.

[0032] As shown in FIGS. 1( a) and 1(d), the second sealing member 80 covers the side and top surfaces of the light-emitting element 50, the top surfaces of the lead electrodes 10, 20, and the top surface of the first sealing member 70, and fills the recess in the housing 100. The second sealing member 80 is a resin medium that transmits light emitted from the light-emitting element 50 and contains a phosphor that absorbs the light emitted from the light-emitting element 50 and emits fluorescence. The second sealing member 80 directly contacts the surfaces of the light-emitting element 50 and the lead electrodes 10, 20 around the light-emitting element 50, but contacts the first sealing member 70 and the frame 40, which are also made of resin, in other areas. The second sealing member 80, the first sealing member 70, and the frame 40 are all made of resin, and therefore have high adhesion. This prevents the second sealing member 80 from peeling off from the light-emitting element 50 or the housing 100, which could lead to a decrease in light output.

[0033] The second sealing member 80 is a resin containing dimethyl silicone resin as a medium resin and LSN:Ce phosphor particles as a phosphor, which are lanthanum silicon nitride (LSN) particles with a particle size of 10 μm to 50 μm and an added cerium (Ce) activator. The thermal expansion coefficient of the dimethyl silicone resin used in this example is 212 ppm°C. -1 and the hardness (JIS K 6253 durometer type A (Shore A)) is A65 to A78. Note that, as the medium resin, for example, dialkyl silicone resin, epoxy resin, acrylic resin, polycarbonate resin, etc. can also be used.

[0034] The phosphor contained in the second sealing member 80 may be, for example, a YAG:Ce phosphor in which a cerium (Ce) activator is added to yttrium aluminum garnet (YAG), which is a yellow phosphor; a β-sialon phosphor, which is a green phosphor; or a silicon nitride-based phosphor (CASN, SCASN) or a silicon fluoride-based phosphor (KFS), which is a red phosphor, selected singly or in multiples.

[0035] In this way, the semiconductor light emitting device 1 has a structure in which the first sealing member 70 is provided at the end of the contact surface 40c between the lead electrodes 10, 20 and the frame body 40 on the recess side, thereby improving the contact between the lead electrodes 10, 20 and the frame body 40.

[0036] (Manufacturing method) Next, a manufacturing method of the semiconductor light emitting device 1 of the embodiment will be described. Fig. 3 shows a flow of the manufacturing process of the semiconductor light emitting device 1. Figs. 4(a) to (c) and Figs. 6(a) to (c) show schematic diagrams of the semiconductor light emitting device 1 during manufacturing. Figs. 5(a) to (c) are diagrams showing the process of forming the first sealing member in the first sealing member forming step. The manufacturing method will be described in the state where multiple semiconductor light emitting devices 1 are connected in a lattice pattern.

[0037] First, a frame forming step (S200) is performed in which an electrode coating is applied to a frame base material, which is a metal plate from which all but the lead electrodes 10, 20 and the lead electrode support portion 110 supporting the lead electrodes 10, 20 have been removed. Specifically, a Cu plate having a size (length x width x thickness: 60 mm x 140 mm x 0.2 mm) large enough to simultaneously form multiple semiconductor light-emitting devices 1 is punched to form a lead base material from which all but the lead electrodes 10, 20 and the lead electrode support portion 110 have been removed. Next, an electrolytic plating method is used to form a frame 110f with a plating layer (Ni / Au layer) formed by forming Ni (0.5 μm) and Au (2.5 μm) in this order on the surface of the lead base material (FIG. 4(a)). The plating layer may also be silver (Ag), which has high reflectivity in the visible light range.

[0038] Next, a frame molding step is performed (S201) to form a frame 40 that fills the gaps 30 in the frame 110F, stands upright on the peripheries of the lead electrodes 10 and 20, and covers the side surfaces of the lead electrodes 10 and 20. This results in the formation of the housing 100. Specifically, the frame 110F is sandwiched between upper and lower molds each having a recess that will become the frame 40, and a precursor (thermosetting dimethyl silicone resin containing titanium oxide particles) that will become the frame 40 is pressed into the recess of the mold. The mold is heated at 150°C for 120 minutes, and a composite molded body in which the frame 40 is integrally molded with the frame 110F is formed as the housing 100 (FIG. 4(b)).

[0039] Next, an element mounting process is performed (S202), in which the protective element 51 is mounted on the first lead electrode 10 in the recess of the casing 100, and the light emitting element 50 is mounted on the second lead electrode 20. Specifically, a conductive paste is applied to the upper surface of the first lead electrode 10, and the protective element 51 is placed thereon. An adhesive member 60 is applied to the upper surface of the second lead electrode 20, and the light emitting element 50 is placed thereon. After that, the conductive paste and adhesive member 60 are hardened by heating at 150°C to 180°C for 30 to 60 minutes, and the protective element 51 and the light emitting element 50 are bonded (die-bonded) to the first lead electrode 10 and the second lead electrode 20, respectively. The upper electrode of the protective element 51 and the second lead electrode are connected by an Au bonding wire 93. Similarly, one of the upper electrodes of the light emitting element 50 is connected to the first lead electrode 10 by an Au bonding wire 90. The other upper electrode of the light emitting element 50 is connected to the second lead electrode 20 by an Au bonding wire 91. With the above steps, the light emitting element 50 and the protective element 51 are mounted on the bottom surface of the housing 100 (FIG. 4(c)).

[0040] Next, a first sealing member formation process is performed (S203) to form a first sealing member 70 that covers the recess outer boundary 41 and the recess gap boundary 42 of the housing 100 in which the light-emitting element 50 and the protective element 51 are mounted. Specifically, as shown in FIG. 5(a), a precursor (SQ resin containing TiO particles) that will become the first sealing member 70 is applied to a first position 120 on the frame 40 that fills the gap 30 between the first lead electrode 10 and the second lead electrode 20. The precursor is also applied to a second position 130 that contacts the boundary between the top surface of the second lead electrode 20 and the inner wall surface 40d of the short side of the frame 40. After leaving the mixture to stand for a while, the precursors spread over the inner wall surface 40d of the short side of the frame 40 as shown in FIG. 5(b), and then spread and combine along the boundary between the second lead electrode 20 and the long side of the frame 40 as shown in FIG. 5(c). After the precursors of the first sealing member 70 are combined, they are heated at 150° C. for 3 to 10 minutes to temporarily harden the precursors, thereby forming the first sealing member 70 (FIG. 6(a)).

[0041] As described above, the first sealing member 70 extends into the recess of the housing 100, and therefore buries the connection portion between the protective element 51 and the lead electrodes 10, 20 of the bonding wires 90, 91. The first sealing member 70 is also formed so as to expose a portion of the upper surface of the second lead electrode in the short side direction of the frame body 40 of the light emitting element 50.

[0042] Next, a second sealing member formation step is performed (S204) to form a second sealing member 80 that covers the top and side surfaces of the light emitting element 50, the second lead electrode 20 exposed from the first sealing member 70, and the first sealing member 70. Specifically, a precursor (dimethyl silicone resin containing TiO2 particles) that will become the second sealing member 80 is injected until it extends over the top surface of the light emitting element 50 and fills the opening of the recess in the housing 100. After being left to stand for a while, the precursor resin is fully cured by heating at 150°C for 3 hours, forming the first sealing member 70 and the second sealing member 80 (FIG. 6(b)).

[0043] Finally, a singulation step (S205) is performed to cut out the frame 110F into individual semiconductor light emitting devices 1. Specifically, the lead electrodes 10, 20 and the lead electrode support portion 110 protruding from the housing 100 are cut off by diverter cutting to form the individual semiconductor light emitting devices 1 (FIG. 6(c)).

[0044] In the above manufacturing method, the first sealing member forming step (S203) is performed after the element mounting step (S202), so even if peeling occurs at the contact surfaces 40b, 40c between the lead electrodes 10, 20 and the frame body 40 during the element mounting step (S202), the first sealing member 70 can penetrate into the peeled area and seal the peeling.

[0045] Furthermore, by temporarily curing the first sealing member 70 in the first sealing member forming step (S203) and then fully curing the first sealing member 70 and the second sealing member 80 in the second sealing member forming step (S204), the semiconductor light emitting device 1 can be formed without applying stress to the first sealing member 70.

[0046] As described above, peeling caused by residual stress and external stress between the lead electrodes 10, 20 of the housing 100, which is a composite molded body, and the frame body 40 can be prevented by providing the first sealing member 70 so as to cover the boundaries between them (the recess outer edge boundary 41 and the recess gap boundary 42). Even if peeling occurs at the boundary between the lead electrodes 10, 20 and the frame body 40, sealing can be maintained by the first sealing member 70, which is in annular contact with (co-contact with) both the lead electrodes 10, 20 and the frame body 40. Therefore, even if corrosive gases such as nitrogen oxides and sulfur oxides are present outside the semiconductor light emitting device 1, they can be prevented from entering the interior of the semiconductor light emitting device 1.

[0047] As described above, according to the present invention, it is possible to provide a semiconductor light emitting device in which the lead frame and the sealing resin have high adhesion and high reliability, and a method for manufacturing such a semiconductor light emitting device.

[0048] Furthermore, the first sealing member 70, which has high hardness, covers the connection portions between the bonding wires and the lead electrodes 10, 20, thereby preventing corrosion and disconnection (breakage) of the bonding wires 90, 91, 93 at the connection portions, thereby providing a highly reliable semiconductor light emitting device.

[0049] Furthermore, since the first sealing member covers the upper surfaces (surfaces) of the lead electrodes 10 and 20, it is possible to suppress a decrease in light output due to peeling of the second sealing member, and therefore a highly reliable semiconductor light emitting device can be provided.

[0050] The above-described example is merely one example of an embodiment. For example, the recess of the housing 100 can be square or circular. The gap 30 between the lead electrodes 10, 20 can also be wavy or crank-shaped. A plurality of light-emitting elements 50 can also be provided in series or parallel. In this case, the number of lead electrodes will be three or more. The light-emitting elements can also be mounted by flip-chip bonding, which does not require bonding wires. [Explanation of symbols]

[0051] 1. Semiconductor light-emitting device 10 First lead electrode 10a step 10b Protrusion 20 Second lead electrode 20a step 20b Protrusion 30 gap 40 Frame 40a contact surface 40b Contact surface 40c contact surface 40d inner wall 41 Outer boundary of recess 42 Recess gap boundary 50 Light-emitting element 51 Protection element 60 Adhesive material 70 First sealing member 80 Second sealing member 90 Bonding Wire 91 Bonding Wire 93 Bonding Wire 100 cabinets 110 Lead electrode support part 110F frame 120 positions 130 positions

Claims

1. a housing, a light emitting element, a first sealing member, and a second sealing member; the housing includes a first lead electrode and a second lead electrode arranged on the same surface with a gap therebetween, and a resin frame body arranged on and around the first lead electrode and the second lead electrode, the frame body forming a recess surrounded by the frame body, and upper surfaces of the first lead electrode and the second lead electrode constituting the bottom surface of the recess, the light emitting element is bonded onto the second lead electrode in the recess via an adhesive member; the first sealing member is in contact with a bottom surface of the recess around the light-emitting element and an inner wall surface of the frame; the second sealing member covers the light emitting element and the first sealing member and fills the recess; a resin constituting the frame extends into the gap between the first lead electrode and the second lead electrode to fill the gap, and an upper surface of the resin filling the gap forms a part of the bottom surface of the recess; The upper surface of the resin filling the gap is covered with the first sealing member. A semiconductor light emitting device characterized by:

2. 2. The semiconductor light emitting device according to claim 1, wherein the hardness of the first sealing member is lower than the hardness of the first lead electrode and the second lead electrode, and higher than the hardness of the frame body.

3. 2. The semiconductor light emitting device according to claim 1, wherein the hardness of the first sealing member is greater than the hardness of the second sealing resin.

4. 2. The semiconductor light emitting device according to claim 1, wherein the first sealing member has a composition formula [(RSiO １．５ )n] (R: alkyl group, n: integer).

5. 5. The semiconductor light emitting device according to claim 4, wherein the medium resin of said first sealing member and the medium resin of said adhesive member are the same type of resin.

6. 2. The semiconductor light emitting device according to claim 1, A semiconductor light-emitting device characterized in that the bottom surface of the recess is rectangular when viewed from above, and the bottom surface of the recess between the frame body located on the short side of the bottom surface and the outer edge of the light-emitting element facing the frame body on the short side is covered with the first sealing member in the area closer to the frame body and is not covered with the first sealing member in the area closer to the light-emitting element.

7. 7. A semiconductor light-emitting device as described in claim 6, characterized in that a pair of element electrodes are arranged on the upper surface of the light-emitting element, one of the pair of element electrodes is connected to the first lead electrode by a first wire, and the other is connected to the second lead electrode by a second wire, and the connection portion between the first wire and the first lead electrode and the connection portion between the second wire and the second lead electrode are embedded in the first sealing member.

8. forming a frame from a resin containing light-reflective particles along edges of upper surfaces of the first lead electrode and the second lead electrode that are disposed on the same plane with a gap between them; a step of adhering a light emitting element to an upper surface of the second lead electrode surrounded by the frame body using an adhesive member; a step of wire-bonding a pair of upper surface electrodes on an upper surface of the light emitting element to upper surfaces of a first lead electrode and a second lead electrode, respectively; a step of applying a resin containing light-reflective particles to the upper surfaces of the first lead electrode and the second lead electrode between the frame body and the light-emitting element, causing the resin to wet and spread by capillary action to corners where the inner wall surface of the frame body and the upper surfaces of the first lead electrode and the second lead electrode meet, thereby forming a first sealing member that contacts the first lead electrode and the second lead electrode inside the recess surrounded by the frame body and the inner wall surface of the frame body; and filling the frame with a resin containing a phosphor to form a second sealing member that covers the upper surface of the first sealing member, the upper surfaces of the first lead electrode and the second lead electrode, and the side and upper surfaces of the light-emitting element, A method for manufacturing a semiconductor light-emitting device, characterized in that in the process of forming the first sealing member, the resin is applied to a predetermined position between the frame body and the light-emitting element so that the resin that has wetted and spread to the corners does not come into contact with the light-emitting element.

9. 9. A method for manufacturing a semiconductor light emitting device according to claim 8, comprising: A method for manufacturing a semiconductor light emitting device, wherein the hardness of the first sealing member after curing is greater than the hardness of the frame body after curing.

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