Mask for film formation, method of manufacturing solar cell and solar cell

Abstract

To provide a mask for film formation, achieving an improvement in pattern deposition accuracy.SOLUTION: A mask 100 for film formation includes: a pattern opening 110 having a strip-shaped bus bar opening 110b corresponding to a bus bar part at a comb-shaped pattern and a plurality of strip-shaped finger openings 110f corresponding to a plurality of finger parts at the pattern, respectively; a frame part 120 that surrounds the pattern opening 110 and that comprises a first frame side part and a second frame side part sandwiching the pattern opening 110 therebetween and a third frame side part and a fourth frame side part sandwiching the pattern opening 110 therebetween; a plurality of strip-shaped finger mask parts 130 which are each arranged between the finger openings 110f adjacent to each other and extend from the third frame side part toward the respective bus bar openings; and a joint part 140 which, in a part of the pattern opening 110, joints each of the finger mask parts 130 to at least one of the frame part 120 and the adjacent finger mask part 130.SELECTED DRAWING: Figure 4A

Description

[Technical Field]

[0001] The present invention relates to a film formation mask, a method for manufacturing a solar cell using the film formation mask, and a solar cell manufactured by the manufacturing method. [Background technology]

[0002] For example, a back-contact solar cell has comb-shaped first and second semiconductor layers on the back surface side. The first semiconductor layer has a plurality of finger portions corresponding to the comb teeth and a busbar portion corresponding to support portions of the comb teeth. The busbar portion extends in a first direction along one side, and the finger portions extend from the busbar portion in a second direction intersecting the first direction. Similarly, the second semiconductor layer has a plurality of finger portions corresponding to the comb teeth and a busbar portion corresponding to support portions of the comb teeth. The busbar portion extends in the first direction along the other side opposite the one side, and the finger portions extend from the busbar portion in the second direction. The finger portions of the first semiconductor layer and the finger portions of the second semiconductor layer form strip shapes extending in the second direction and are arranged alternately in the first direction.

[0003] As a method for forming such a first semiconductor layer and a second semiconductor layer, when forming the layers by a CVD method, it is known to simultaneously perform film formation and patterning using a shadow mask such as a metal mask (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-200267 [Patent Document 2] International Publication No. 2016 / 076300 Summary of the Invention [Problem to be solved by the invention]

[0005] Such a deposition mask has pattern openings corresponding to the pattern of the first semiconductor layer or the second semiconductor layer, i.e., the deposition mask has pattern openings having band-shaped busbar openings corresponding to the busbar portions and a plurality of band-shaped finger openings corresponding to the plurality of finger portions, respectively.

[0006] In order to provide such pattern openings, the film formation mask is a frame portion surrounding the pattern opening, the frame portion being composed of a first frame side portion and a second frame side portion that sandwich the pattern opening in a first direction, and a third frame side portion and a fourth frame side portion that sandwich the pattern opening in a second direction; a plurality of strip-shaped finger mask portions each disposed between adjacent finger openings and extending in the second direction from the third frame side portion toward the bus bar opening; It consists of:

[0007] Here, the thickness of the metal mask used for film formation is relatively thin, which makes it difficult to determine the position of the strip-shaped finger mask portions between the finger openings, resulting in reduced film formation accuracy for the patterns of the first or second semiconductor layer.

[0008] An object of the present invention is to provide a film formation mask that improves the accuracy of pattern film formation, a method for manufacturing a solar cell, and a solar cell. [Means for solving the problem]

[0009] The film formation mask of the present invention is a metal film formation mask for forming a comb-shaped pattern on a substrate, and includes a pattern opening corresponding to the pattern, the pattern opening having a band-shaped busbar opening that corresponds to a busbar portion in the pattern and extends in a first direction, and a plurality of band-shaped finger openings that correspond to a plurality of finger portions in the pattern, extend from the busbar opening in a second direction that intersects the first direction, and are spaced apart in the first direction. This film formation mask has a frame portion surrounding the pattern opening, and is composed of a first frame side portion and a second frame side portion that sandwich the pattern opening in the first direction, and a third frame side portion and a fourth frame side portion that sandwich the pattern opening in the second direction, and the fourth frame side portion is adjacent to the bus bar opening and includes the frame portion and a plurality of band-shaped finger mask portions that are respectively arranged between adjacent finger openings among the plurality of finger openings, spaced apart in the first direction, and extending in the second direction from the third frame side portion toward the bus bar opening, and a joint portion that joins each of the plurality of finger mask portions to at least one of the frame portion and an adjacent finger mask portion among the plurality of finger mask portions in a portion of the pattern opening.

[0010] Another film formation mask according to the present invention is a metal film formation mask for forming comb-shaped first and second patterns on a substrate, the first pattern opening corresponding to the first pattern, the first pattern opening having a band-shaped first busbar opening that corresponds to a busbar portion in the first pattern and extends in a first direction, and a plurality of band-shaped first finger openings that correspond to a plurality of finger portions in the first pattern, extending from the first busbar opening in a second direction intersecting the first direction and spaced apart in the first direction; and a second pattern opening corresponding to the second pattern, the second pattern opening having a band-shaped second busbar opening that corresponds to the busbar portion in the second pattern and extending in the first direction, and a plurality of band-shaped second finger openings that correspond to a plurality of finger portions in the second pattern, extending from the second busbar opening in the second direction and spaced apart in the first direction, the second pattern opening being symmetrical to the first pattern opening with respect to a line along the first direction.The film formation mask has a frame portion surrounding the first pattern opening and the second pattern opening, the frame portion being composed of a first frame side portion and a second frame side portion that sandwich the first pattern opening and the second pattern opening in the first direction, a third frame side portion and one fourth frame side portion that sandwich the first pattern opening in the second direction, and the third frame side portion and the other fourth frame side portion that sandwich the second pattern opening in the second direction, the one fourth frame side portion being adjacent to the first bus bar opening, and the other fourth frame side portion being adjacent to the second bus bar opening. the first pattern opening includes a first finger mask portion; a plurality of band-shaped second finger mask portions that are respectively arranged between adjacent second finger openings of the plurality of second finger openings, spaced apart in the first direction, and extending in the second direction from the third frame side portion toward the second bus bar opening; a first joint portion that joins each of the plurality of first finger mask portions to at least one of the frame portion and an adjacent first finger mask portion of the plurality of first finger mask portions in a portion of the first pattern opening; and a second joint portion that joins each of the plurality of second finger mask portions to at least one of the frame portion and an adjacent second finger mask portion of the plurality of second finger mask portions in a portion of the second pattern opening.

[0011] Yet another film formation mask according to the present invention is a metal film formation mask for forming first and second comb-shaped patterns on a substrate, the film formation mask comprising: a first pattern opening corresponding to the first pattern, the first pattern opening having a band-shaped first busbar opening that corresponds to a busbar portion in the first pattern and extends in a first direction, and a plurality of band-shaped first finger openings that respectively correspond to a plurality of finger portions in the first pattern and extend from the first busbar opening in a second direction intersecting the first direction and are spaced apart in the first direction; and a second pattern opening corresponding to the second pattern, the second pattern opening having a band-shaped second busbar opening that corresponds to the busbar portion in the second pattern and extending in the first direction, and a plurality of band-shaped second finger openings that respectively correspond to the plurality of finger portions in the second pattern and extend from the second busbar opening in the second direction and are spaced apart in the first direction, the second pattern opening being line-symmetrical to the first pattern opening with respect to a line along the first direction, and the second busbar opening being adjacent to the first busbar opening.the film formation mask includes a frame portion surrounding the first pattern opening and the second pattern opening, the frame portion being configured with a first frame side portion and a second frame side portion sandwiching the first pattern opening and the second pattern opening in the first direction, and one third frame side portion and the other third frame side portion sandwiching the first pattern opening and the second pattern opening in the second direction; a plurality of strip-shaped first finger mask portions that are respectively arranged between adjacent first finger openings among the plurality of first finger openings and spaced apart in the first direction, extending in the second direction from the one third frame side portion toward the first bus bar opening; and a plurality of strip-shaped first finger mask portions that are respectively arranged between adjacent second finger openings among the plurality of second finger openings, The conductive pattern includes a plurality of band-shaped second finger mask portions spaced apart in one direction and extending in the second direction from the other third frame side portion toward the second bus bar opening; a first joint portion that joins each of the plurality of first finger mask portions to at least one of the frame portion, an adjacent first finger mask portion among the plurality of first finger mask portions, and the plurality of second finger mask portions in a portion of the first pattern opening; and a second joint portion that joins each of the plurality of second finger mask portions to at least one of the frame portion, an adjacent second finger mask portion among the plurality of second finger mask portions, and the plurality of first finger mask portions in a portion of the second pattern opening.

[0012] The method for manufacturing a solar cell according to the present invention is a method for manufacturing a back-contact solar cell having a comb-shaped first conductivity type semiconductor layer formed on a portion of the back surface side of a semiconductor substrate and a comb-shaped second conductivity type semiconductor layer formed on another portion of the back surface side of the semiconductor substrate, in which the first conductivity type semiconductor layer is formed on the back surface of the semiconductor substrate using a first deposition mask having a pattern opening corresponding to the comb-shaped pattern of the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer is formed on the back surface of the semiconductor substrate using a second deposition mask having a pattern opening corresponding to the comb-shaped pattern of the second conductivity type semiconductor layer.

[0013] Another method for manufacturing a solar cell according to the present invention is a method for manufacturing a back-contact solar cell including a comb-shaped first conductivity type semiconductor layer formed on a portion of the back surface side of a semiconductor substrate and a comb-shaped second conductivity type semiconductor layer formed on another portion of the back surface side of the semiconductor substrate, wherein the first conductivity type semiconductor layer is formed on the back surface of the semiconductor substrate using the above-mentioned another first film formation mask, the first film formation mask having first pattern openings corresponding to the first comb-shaped pattern of the first conductivity type semiconductor layer and second pattern openings corresponding to the second comb-shaped pattern of the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer is formed on the back surface of the semiconductor substrate using the above-mentioned yet another second film formation mask, the second film formation mask having first pattern openings corresponding to the first comb-shaped pattern of the second conductivity type semiconductor layer and second pattern openings corresponding to the second comb-shaped pattern of the second conductivity type semiconductor layer.

[0014] The solar cell according to the present invention is a back-contact type solar cell manufactured by the above-described method for manufacturing a solar cell.

[0015] Another solar cell according to the present invention is a back-contact type solar cell manufactured by the above-mentioned method for manufacturing another solar cell. [Effects of the Invention]

[0016] According to the present invention, the accuracy of pattern deposition can be improved. [Brief explanation of the drawings]

[0017] [Figure 1] 1 is a view of the solar cell according to the first embodiment as seen from the back surface side. [Figure 2] 1 and 8. FIG. 1 is a cross-sectional view (part) of the solar cell taken along line II-II in FIG. [Figure 3A] 3A to 3C are diagrams illustrating a first semiconductor layer forming step in the solar cell manufacturing method according to the first and second embodiments. [Figure 3B]3A to 3C are diagrams illustrating a first semiconductor layer forming step in the solar cell manufacturing method according to the first and second embodiments. [Figure 3C] FIG. 3 is a diagram illustrating a second semiconductor layer forming step in the solar cell manufacturing method according to the first and second embodiments. [Figure 3D] FIG. 3 is a diagram illustrating a second semiconductor layer forming step in the solar cell manufacturing method according to the first and second embodiments. [Figure 3E] FIG. 2 is a diagram showing an electrode layer forming step in the solar cell manufacturing method according to the first and second embodiments. [Figure 4A] FIG. 2 is a diagram showing a first film formation mask according to the first embodiment. [Figure 4B] FIG. 10 is a diagram showing a first film formation mask according to a modified example of the first embodiment. [Figure 4C] FIG. 10 is a diagram showing a first film formation mask according to a modified example of the first embodiment. [Figure 4D] FIG. 10 is a diagram showing a first film formation mask according to a modified example of the first embodiment. [Figure 5] 4B is an enlarged view of a V portion of the first film formation mask in FIG. 4A. FIG. [Figure 6A] FIG. 4 is a diagram showing a second film formation mask according to the first embodiment. [Figure 6B] FIG. 10 is a diagram showing a second film formation mask according to a modified example of the first embodiment. [Figure 6C] FIG. 10 is a diagram showing a second film formation mask according to a modified example of the first embodiment. [Figure 6D] FIG. 10 is a diagram showing a second film formation mask according to a modified example of the first embodiment. [Figure 7] FIG. 6B is an enlarged view of a portion VII in the second film formation mask of FIG. 6A. [Figure 8] FIG. 10 is a view of the solar cell according to the second embodiment as seen from the back surface side. [Figure 9A] FIG. 10 is a diagram showing a first film formation mask according to a second embodiment. [Figure 9B] FIG. 10 is a diagram showing a first film formation mask according to a modified example of the second embodiment. [Figure 9C]FIG. 10 is a diagram showing a first film formation mask according to a modified example of the second embodiment. [Figure 9D] FIG. 10 is a diagram showing a first film formation mask according to a modified example of the second embodiment. [Figure 10] 9B is an enlarged view of a portion X in the first film formation mask in FIG. 9A. FIG. [Figure 11] 9B is an enlarged view of a portion XI in the first film formation mask of FIG. 9A. FIG. [Figure 12A] FIG. 10 is a diagram showing a second film formation mask according to the second embodiment. [Figure 12B] FIG. 10 is a diagram showing a second film formation mask according to a modified example of the second embodiment. [Figure 12C] FIG. 10 is a diagram showing a second film formation mask according to a modified example of the second embodiment. [Figure 12D] FIG. 10 is a diagram showing a second film formation mask according to a modified example of the second embodiment. [Figure 13] 12B is an enlarged view of a portion XIII of the second film formation mask of FIG. 12A. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0018] An example of an embodiment of the present invention will be described below with reference to the accompanying drawings. The same or equivalent parts in each drawing are designated by the same reference numerals. For convenience, hatching and reference numerals may be omitted. In such cases, reference should be made to other drawings.

[0019] [First embodiment] (solar cells) Fig. 1 is a view of the solar cell according to the first embodiment as seen from the back surface side, and Fig. 2 is a cross-sectional view (part) of the solar cell taken along line II-II in Fig. 1. Note that Fig. 1 omits a first electrode layer and a second electrode layer, which will be described later, and shows a first conductivity type semiconductor layer and a second conductivity type semiconductor layer.

[0020] 1 and 2 is a back-contact type (also called a back electrode type or back junction type) heterojunction solar cell. Solar cell 1 includes a semiconductor substrate 11 with two main surfaces, and the main surface of semiconductor substrate 11 has a first region 7 and a second region 8. Hereinafter, the main surface of semiconductor substrate 11 that receives light will be referred to as the light-receiving surface, and the main surface of semiconductor substrate 11 opposite the light-receiving surface will be referred to as the back surface.

[0021] The first region 7 has a so-called comb shape and includes a plurality of finger portions 7f corresponding to the teeth of the comb and busbar portions 7b corresponding to supports for the teeth of the comb. The busbar portions 7b extend in a first direction (X direction) along one side of the semiconductor substrate 11, and the finger portions 7f extend from the busbar portions 7b in a second direction (Y direction) that intersects with the first direction.

[0022] Similarly, the second region 8 has a so-called comb shape and includes a plurality of finger portions 8f corresponding to the teeth of the comb and busbar portions 8b corresponding to supports for the teeth of the comb. The busbar portions 8b extend in a first direction along one side of the semiconductor substrate 11 opposite the other side, and the finger portions 8f extend in a second direction from the busbar portions 8b.

[0023] The finger portions 7f and the finger portions 8f are strip-shaped and extend in the second direction, and are alternately arranged in the first direction.

[0024] 2, solar cell 1 includes passivation layer 13 and optical adjustment layer 15 formed (deposited, laminated, film-forming) in this order on the light-receiving surface side of semiconductor substrate 11. Solar cell 1 also includes passivation layer 23, first conductivity-type semiconductor layer 25, and first electrode layer 27 formed (deposited, laminated, film-forming) in this order on a portion (mainly first region 7) of the back surface side of semiconductor substrate 11. Solar cell 1 also includes passivation layer 33, second conductivity-type semiconductor layer 35, and second electrode layer 37 formed (deposited, laminated, film-forming) in this order on another portion (mainly second region 8) of the back surface side of semiconductor substrate 11.

[0025] The semiconductor substrate 11 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon. The semiconductor substrate 11 is, for example, an n-type semiconductor substrate obtained by doping a crystalline silicon material with an n-type dopant. The semiconductor substrate 11 may also be a p-type semiconductor substrate obtained by doping a crystalline silicon material with a p-type dopant. An example of an n-type dopant is phosphorus (P). An example of a p-type dopant is boron (B). The semiconductor substrate 11 functions as a photoelectric conversion substrate that absorbs incident light from the light-receiving surface side and generates photocarriers (electrons and holes).

[0026] By using crystalline silicon as the material for the semiconductor substrate 11, dark current is relatively small, and a relatively high output (stable output regardless of illuminance) can be obtained even when the intensity of incident light is low.

[0027] Semiconductor substrate 11 may have a pyramidal fine uneven structure called a texture structure on the light-receiving surface side, which reduces reflection of incident light on the light-receiving surface and improves the light trapping effect in semiconductor substrate 11.

[0028] Furthermore, the semiconductor substrate 11 may have a pyramidal fine uneven structure called a texture structure on the back surface side, which increases the recovery efficiency of light that passes through the semiconductor substrate 11 without being absorbed.

[0029] Passivation layer 13 is formed on the light-receiving surface side of semiconductor substrate 11. Passivation layer 23 is formed in a first region 7 on the back surface side of semiconductor substrate 11. Passivation layer 33 is formed in a second region 8 on the back surface side of semiconductor substrate 11. Passivation layers 13, 23, and 33 are formed of, for example, an intrinsic (i-type) amorphous silicon material. Passivation layers 13, 23, and 33 suppress recombination of carriers generated in semiconductor substrate 11 and increase carrier collection efficiency.

[0030] The optical adjustment layer 15 is formed on the passivation layer 13 on the light-receiving surface side of the semiconductor substrate 11. The optical adjustment layer 15 functions as an anti-reflection layer that prevents or suppresses reflection of incident light, thereby improving the efficiency of light incidence on the semiconductor substrate 11. The optical adjustment layer 15 also functions as a protective layer that protects the light-receiving surface side of the semiconductor substrate 11 and the passivation layer 13. The optical adjustment layer 15 is formed of an insulating material, for example, silicon oxide (SiO), silicon nitride (SiN), or a composite thereof such as silicon oxynitride (SiON).

[0031] The first conductivity type semiconductor layer 25 is formed on the passivation layer 23, i.e., in a first region 7 on the back surface side of the semiconductor substrate 11. The second conductivity type semiconductor layer 35 is formed on the passivation layer 33, i.e., in a second region 8 on the back surface side of the semiconductor substrate 11.

[0032] 1, first conductivity type semiconductor layer 25 has a so-called comb shape and includes a plurality of finger portions 25f corresponding to the teeth of the comb and busbar portions 25b corresponding to the supports of the teeth of the comb. Busbar portions 25b extend in a first direction (X direction) along one side of semiconductor substrate 11, and finger portions 25f extend in a second direction (Y direction) from busbar portions 25b.

[0033] Similarly, the second conductivity type semiconductor layer 35 has a so-called comb shape and includes a plurality of finger portions 35f corresponding to the teeth of the comb and busbar portions 35b corresponding to supports for the teeth of the comb. The busbar portions 35b extend in a first direction along one side of the semiconductor substrate 11 opposite the other side, and the finger portions 35f extend in a second direction from the busbar portions 35b.

[0034] The finger portions 25f and the finger portions 35f are strip-shaped and extend in the second direction, and are alternately arranged in the first direction.

[0035] The first conductivity type semiconductor layer 25 is formed of, for example, an amorphous silicon material. The first conductivity type semiconductor layer 25 is a p-type semiconductor layer obtained by doping an amorphous silicon material with a p-type dopant (for example, the above-mentioned boron (B)).

[0036] The second conductive type semiconductor layer 35 is formed of, for example, an amorphous silicon material. The second conductive type semiconductor layer 35 is, for example, an n-type semiconductor layer in which an amorphous silicon material is doped with an n-type dopant (for example, the above-mentioned phosphorus (P)).

[0037] The first conductivity type semiconductor layer 25 may be an n-type semiconductor layer, and the second conductivity type semiconductor layer 35 may be a p-type semiconductor layer. Parts of the second conductivity type semiconductor layer 35 and the passivation layer 33 may overlap parts of the adjacent first conductivity type semiconductor layer 25 and passivation layer 23.

[0038] 2 again, the first electrode layer 27 corresponds to the first conductivity type semiconductor layer 25, and specifically is formed on the first conductivity type semiconductor layer 25 in the first region 7 on the back surface side of the semiconductor substrate 11. The first electrode layer 27 may have a first transparent electrode layer 28 and a first metal electrode layer 29 formed in this order on the first conductivity type semiconductor layer 25, or may have only the first metal electrode layer 29 formed on the first conductivity type semiconductor layer 25.

[0039] The second electrode layer 37 corresponds to the second conductivity type semiconductor layer 35, and specifically is formed on the second conductivity type semiconductor layer 35 in the second region 8 on the back surface side of the semiconductor substrate 11. The second electrode layer 37 may have a second transparent electrode layer 38 and a second metal electrode layer 39 formed in this order on the second conductivity type semiconductor layer 35, or may have only the second metal electrode layer 39 formed on the second conductivity type semiconductor layer 35.

[0040] The first transparent electrode layer 28 and the second transparent electrode layer 38 are formed of a transparent conductive material. Examples of transparent conductive materials include ITO (Indium Tin Oxide: a composite oxide of indium oxide and tin oxide). The first metal electrode layer 29 and the second metal electrode layer 39 are formed of a metallic material. Examples of metallic materials include silver, copper, and aluminum.

[0041] (Solar Cell Manufacturing Method) Next, a method for manufacturing a solar cell according to the first embodiment will be described with reference to Figures 3A to 3E. Figures 3A and 3B are views illustrating a first semiconductor layer formation step in the method for manufacturing a solar cell according to the first embodiment, and Figures 3C and 3D are views illustrating a second semiconductor layer formation step in the method for manufacturing a solar cell according to the first embodiment. Figure 3E is a view illustrating an electrode layer formation step in the method for manufacturing a solar cell according to the first embodiment.

[0042] First, as shown in FIGS. 3A and 3B, a passivation layer 23 and a first conductivity type semiconductor layer 25 are formed on a part of the back surface side of the semiconductor substrate 11, specifically in the first region 7 (first semiconductor layer forming step).

[0043] Specifically, as shown in Fig. 3A, a passivation layer 23 and a first conductivity type semiconductor layer 25 are formed on the back surface side of the semiconductor substrate 11 using a CVD method or a PVD method. At this time, a first film formation mask 100 (described later) is used to form the passivation layer 23 and the first conductivity type semiconductor layer 25 in a comb-shaped pattern. Thereafter, as shown in Fig. 3B, the first film formation mask 100 is removed.

[0044] Next, as shown in FIGS. 3C and 3D, a passivation layer 33 and a second conductivity type semiconductor layer 35 are formed in another part of the back surface side of the semiconductor substrate 11, specifically in the second region 8 (second semiconductor layer forming step).

[0045] Specifically, as shown in Fig. 3C, a passivation layer 33 and a second conductivity type semiconductor layer 35 are formed on the back surface side of the semiconductor substrate 11 using a CVD method or a PVD method. At this time, a second film formation mask 200 (described later) is used to form the passivation layer 33 and the second conductivity type semiconductor layer 35 in a comb-shaped pattern. Thereafter, as shown in Fig. 3D, the second film formation mask 200 is removed.

[0046] 3E, a passivation layer 13 is formed on the entire surface of the light-receiving surface side of semiconductor substrate 11. An optical adjustment layer 15 is formed on the entire surface of the light-receiving surface side of semiconductor substrate 11.

[0047] Furthermore, a first electrode layer 27 consisting of a first transparent electrode layer 28 and a first metal electrode layer 29 is formed on the first conductivity type semiconductor layer 25, specifically in the first region 7, and a second electrode layer 37 consisting of a second transparent electrode layer 38 and a second metal electrode layer 39 is formed on the second conductivity type semiconductor layer 35, specifically in the second region 8 (electrode layer forming step). The method for forming the transparent electrode layer and the metal electrode layer is not particularly limited, and known techniques can be used.

[0048] Through the above steps, the back contact type solar cell 1 of this embodiment is obtained.

[0049] (film production mask) In the following, film formation masks for forming the passivation layer 23 and the first conductivity type semiconductor layer 25, and the passivation layer 33 and the second conductivity type semiconductor layer 35 will be exemplified.

[0050] 4A, 5, 6A, and 7 are diagrams showing film formation masks according to the first embodiment. Specifically, Fig. 4A is a diagram showing a first film formation mask for forming the comb-shaped patterns of the passivation layer 23 and the first-conductivity-type semiconductor layer 25 described above, and Fig. 5 is an enlarged view of a portion V of the first film formation mask shown in Fig. 4A. Meanwhile, Fig. 6A is a diagram showing a second film formation mask for forming the comb-shaped patterns of the passivation layer 33 and the second-conductivity-type semiconductor layer 35 described above, and Fig. 7 is an enlarged view of a portion VII of the second film formation mask shown in Fig. 6A.

[0051] <<First film formation mask>> 4A, the first film formation mask 100 has pattern openings 110 corresponding to the comb-shaped pattern of the first conductivity type semiconductor layer 25. The pattern openings 110 have busbar openings 110b corresponding to the busbar portions 25b in the first conductivity type semiconductor layer 25 and a plurality of finger openings 110f corresponding to the plurality of finger portions 25f in the first conductivity type semiconductor layer 25. The busbar openings 110b have a strip shape extending in a first direction (X direction) along one end. The finger openings 110f have a strip shape extending in a second direction (Y direction) from the busbar opening 110b and are spaced apart in the first direction.

[0052] The first film formation mask 100 is a metal mask made of a metal material such as stainless steel or Hastelloy, and includes a frame portion 120 , a plurality of finger mask portions 130 , and joint portions 140 .

[0053] Frame 120 surrounds pattern opening 110. Frame 120 is composed of first frame side 121 and second frame side 122 that sandwich pattern opening 110 in a first direction (X direction), and third frame side 123 and fourth frame side 124 that sandwich pattern opening 110 in a second direction (Y direction). Fourth frame side 124 is adjacent to bus bar opening 110b.

[0054] The finger mask portions 130 are respectively disposed between adjacent ones of the finger openings 110f and spaced apart in the first direction (X direction). Each of the finger mask portions 130 has a strip shape extending in the second direction (Y direction) from the third frame side portion 123 toward the bus bar opening 110b.

[0055] The joint portion (junction portion) 140 joins (connects) each of the finger mask portions 130 to at least one of the frame portion 120 and the adjacent finger mask portion 130 in a portion of the pattern opening 110. For example, the joint portion 140 may join each of the finger mask portions 130 to the frame portion 120 or the adjacent finger mask portion 130 in a portion of the finger opening 110f of the pattern opening 110. The joint portion 140 may also join each of the finger mask portions 130 to the frame portion 120 in at least a portion of the busbar opening 110b of the pattern opening 110.

[0056] Specifically, the joint portion 140 joins the finger mask portion 130 adjacent to the first frame side portion 121 to the first frame side portion 121 in a portion of the finger opening 110f adjacent to the first frame side portion 121, for example, in a portion on the bus bar opening 110b side. The joint portion 140 also joins the finger mask portion 130 adjacent to the second frame side portion 122 to the second frame side portion 122 in a portion of the finger opening 110f adjacent to the second frame side portion 122, for example, in a portion on the bus bar opening 110b side. The joint portion 140 also joins adjacent finger mask portions 130 in a portion of the remaining finger openings 110f, for example, in a portion on the bus bar opening 110b side.

[0057] Furthermore, the joint portion 140 joins the end portion of the finger mask portion 130 and the fourth frame side portion 124 at the bus bar opening 110b.

[0058] 4B, the joint portion 140 may join each of the finger mask portions 130 to the frame portion 120 and the adjacent finger mask portion 130 only at the finger opening 110f of the pattern opening 110. Alternatively, as shown in FIG. 4C, the joint portion 140 may join each of the finger mask portions 130 to the frame portion 120 only at the bus bar opening 110b of the pattern opening 110.

[0059] 4A or 4B, as shown in FIG. 4D, the joint portion 140 may further join the finger mask portion 130 adjacent to the first frame side portion 121 to the first frame side portion 121 at one or more other portions of the finger opening 110f adjacent to the first frame side portion 121 that are different from the portion on the busbar opening 110b side. The joint portion 140 may further join the finger mask portion 130 adjacent to the second frame side portion 122 to the second frame side portion 122 at one or more other portions of the finger opening 110f adjacent to the second frame side portion 122 that are different from the portion on the busbar opening 110b side. The joint portion 140 may further join adjacent finger mask portions 130 at one or more other portions of the remaining finger openings 110f that are different from the portion on the busbar opening 110b side.

[0060] Also, in Figure 4A or 4C, the joint portion 140 may join the end of each finger mask portion 130 to the fourth frame side portion 124 in a portion of the busbar opening 110b of the pattern opening 110, for example, a portion on an extension line from each finger mask portion 130 in the second direction.

[0061] The joint portion 140 may have a mesh shape as shown in Fig. 5. Each mesh shape may be a hexagonal shape as shown in Fig. 5, but is not limited to this and may have various polygonal shapes or a circular shape. Alternatively, the joint portion 140 may have a shape of multiple straight lines.

[0062] The line width of the pattern of the joint portion 140 is preferably 0.1 mm or more and 1.0 mm or less. If it is 0.1 mm or more, it is possible to prevent the pattern of the joint portion 140 from being cut. On the other hand, if it is 1.0 mm or less, during film formation by the CVD method or the PVD method, the material gas can reach under the pattern of the joint portion 140, and the patterns of the passivation layer 23 and the first conductivity type semiconductor layer 25 can be formed under the pattern of the joint portion 140.

[0063] <<Second film deposition mask>> 6A, the second film formation mask 200 has pattern openings 210 corresponding to the comb-shaped pattern of the second conductivity-type semiconductor layer 35. The pattern openings 210 have busbar openings 210b corresponding to the busbar portions 35b of the second conductivity-type semiconductor layer 35 and a plurality of finger openings 210f corresponding to the plurality of finger portions 35f of the second conductivity-type semiconductor layer 35. The busbar openings 210b have a strip shape extending in the first direction (X direction) along one end. The finger openings 210f have a strip shape extending in the second direction (Y direction) from the busbar opening 210b and are spaced apart in the first direction.

[0064] The second film formation mask 200 is a metal mask made of a metal material such as stainless steel or Hastelloy, and includes a frame portion 220 , a plurality of finger mask portions 230 , and joint portions 240 .

[0065] Frame 220 surrounds pattern opening 210. Frame 220 is composed of first frame side 221 and second frame side 222 that sandwich pattern opening 210 in a first direction (X direction), and third frame side 223 and fourth frame side 224 that sandwich pattern opening 210 in a second direction (Y direction). Fourth frame side 224 is adjacent to bus bar opening 210b.

[0066] The finger mask portions 230 are respectively disposed between adjacent ones of the finger openings 210f and are spaced apart in the first direction (X direction). Each of the finger mask portions 230 has a strip shape extending in the second direction (Y direction) from the third frame side portion 223 toward the bus bar opening 210b.

[0067] The joint portion (junction portion) 240 joins (connects) each of the finger mask portions 230 to at least one of the frame portion 220 and an adjacent finger mask portion 230 in a portion of the pattern opening 210. For example, the joint portion 240 may join each of the finger mask portions 230 to the frame portion 220 or an adjacent finger mask portion 230 in a portion of the finger opening 210f of the pattern opening 210. The joint portion 240 may also join each of the finger mask portions 230 to the frame portion 220 in at least a portion of the busbar opening 210b of the pattern opening 210.

[0068] Specifically, the joint portion 240 joins the finger mask portion 230 adjacent to the first frame side portion 221 to the first frame side portion 221 in a portion of the finger opening 210f adjacent to the first frame side portion 221, for example, in a portion on the bus bar opening 210b side. The joint portion 240 also joins the finger mask portion 230 adjacent to the second frame side portion 222 to the second frame side portion 222 in a portion of the finger opening 210f adjacent to the second frame side portion 222, for example, in a portion on the bus bar opening 210b side. The joint portion 240 also joins adjacent finger mask portions 230 in a portion of the remaining finger opening 210f, for example, in a portion on the bus bar opening 210b side.

[0069] Furthermore, joint portion 240 joins the end portion of finger mask portion 230 and fourth frame side portion 224 at bus bar opening 210b.

[0070] 6B, the joint portion 240 may join each finger mask portion 230 to the frame portion 220 and the adjacent finger mask portion 230 only at the finger opening 210f of the pattern opening 210. Alternatively, as shown in FIG. 6C, the joint portion 240 may join each finger mask portion 230 to the frame portion 220 only at the bus bar opening 210b of the pattern opening 210.

[0071] 6A or 6B, as shown in FIG. 6D, the joint portion 240 may further join the finger mask portion 230 adjacent to the first frame side portion 221 to the first frame side portion 221 at one or more other portions of the finger opening 210f adjacent to the first frame side portion 221 that are different from the portion on the busbar opening 210b side. The joint portion 240 may further join the finger mask portion 230 adjacent to the second frame side portion 222 to the second frame side portion 222 at one or more other portions of the finger opening 210f adjacent to the second frame side portion 222 that are different from the portion on the busbar opening 210b side. The joint portion 240 may further join adjacent finger mask portions 230 at one or more other portions of the remaining finger openings 210f that are different from the portion on the busbar opening 210b side.

[0072] Also, in Figure 6A or 6C, the joint portion 240 may join the end of each finger mask portion 230 to the fourth frame side portion 224 in a portion of the busbar opening 210b of the pattern opening 210, for example, a portion on an extension line from each finger mask portion 230 in the second direction.

[0073] The joint portion 240 may be in a mesh shape as shown in Fig. 7. Each mesh shape may be a hexagonal shape as shown in Fig. 7, but is not limited to this and may be in various polygonal shapes or a circular shape. Alternatively, the joint portion 240 may be in the shape of a plurality of straight lines.

[0074] The line width of the pattern of the joint portion 240 is preferably 0.1 mm or more and 1.0 mm or less. If it is 0.1 mm or more, it is possible to prevent the pattern of the joint portion 240 from being cut. On the other hand, if it is 1.0 mm or less, during film formation by the CVD method or the PVD method, the material gas can reach under the pattern of the joint portion 240, and the patterns of the passivation layer 33 and the second conductivity type semiconductor layer 35 can be formed under the pattern of the joint portion 240.

[0075] Here, the thickness of the metal film formation mask (metal mask) is relatively thin, which makes it difficult to determine the positions of the strip-shaped finger mask portions between the finger openings, resulting in a decrease in film formation accuracy for the pattern of the first conductivity type semiconductor layer 25 or the second conductivity type semiconductor layer 35.

[0076] In this regard, according to the first film formation mask 100 of the first embodiment, the joint portions 140 join each of the finger mask portions 130 to at least one of the frame portion 120 and the adjacent finger mask portion 130 in a part of the pattern opening 110. This determines the position of the finger mask portions 130, and improves the film formation accuracy of the patterns of the passivation layer 23 and the first conductivity type semiconductor layer 25.

[0077] Similarly, according to the second film formation mask 200 of the first embodiment, the joint portions 240 join each of the finger mask portions 230 to at least one of the frame portion 220 and the adjacent finger mask portion 230 in a part of the pattern opening 210. This determines the position of the finger mask portions 230, and can improve the film formation accuracy of the patterns of the passivation layer 33 and the second conductivity type semiconductor layer 35.

[0078] [Second embodiment] The first embodiment illustrates a manufacturing method and a deposition mask for obtaining one solar cell 1 from a semiconductor substrate 11. The second embodiment illustrates an example of a manufacturing method and a deposition mask for obtaining two solar cells from a semiconductor substrate. However, the second embodiment is not limited to this and can also be applied to a manufacturing method and a deposition mask for obtaining three or more solar cells from a semiconductor substrate.

[0079] (solar cells) Fig. 8 is a view of the solar cell according to the second embodiment as seen from the back surface side. As in Fig. 1, Fig. 8 also omits the first electrode layer and the second electrode layer and shows only the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

[0080] As shown in Fig. 8, two solar cells 1 are formed on a semiconductor substrate 11, and the two solar cells 1 can be obtained by cutting the semiconductor substrate 11 along a cut line L. The cross section of each of the two solar cells 1 taken along line II-II shown in Fig. 8 is the same as the cross section (part) shown in Fig. 2. In other words, the configuration of each of the two solar cells 1 is the same as the configuration of the solar cell 1 of the first embodiment described above.

[0081] (Solar Cell Manufacturing Method) The method for manufacturing the solar cell of the second embodiment shown in FIG. 8 is also substantially the same as the method for manufacturing the solar cell 1 of the first embodiment shown in FIGS. 3A to 3E.

[0082] First, as shown in FIGS. 3A and 3B, a passivation layer 23 and a first conductivity type semiconductor layer 25 are formed on a part of the back surface side of the semiconductor substrate 11, specifically in the first region 7 (first semiconductor layer forming step).

[0083] 3A, a passivation layer 23 and a first conductivity type semiconductor layer 25 are formed on the back surface of the semiconductor substrate 11 by CVD or PVD. At this time, a first film formation mask 101 (described later) is used to form the passivation layer 23 and the first conductivity type semiconductor layer 25 in a comb-shaped pattern. Thereafter, as shown in FIG. 3B, the first film formation mask 101 is removed.

[0084] Next, as shown in FIGS. 3C and 3D, a passivation layer 33 and a second conductivity type semiconductor layer 35 are formed in another part of the back surface side of the semiconductor substrate 11, specifically in the second region 8 (second semiconductor layer forming step).

[0085] Specifically, as shown in Fig. 3C, a passivation layer 33 and a second conductivity type semiconductor layer 35 are formed on the back surface side of the semiconductor substrate 11 using a CVD method or a PVD method. At this time, a second film formation mask 201 (described later) is used to form the passivation layer 33 and the second conductivity type semiconductor layer 35 in a comb-shaped pattern. Thereafter, as shown in Fig. 3D, the second film formation mask 201 is removed.

[0086] 3E, a passivation layer 13 is formed on the entire surface of the light-receiving surface side of semiconductor substrate 11. An optical adjustment layer 15 is formed on the entire surface of the light-receiving surface side of semiconductor substrate 11.

[0087] Furthermore, a first electrode layer 27 consisting of a first transparent electrode layer 28 and a first metal electrode layer 29 is formed on the first conductivity type semiconductor layer 25, specifically in the first region 7, and a second electrode layer 37 consisting of a second transparent electrode layer 38 and a second metal electrode layer 39 is formed on the second conductivity type semiconductor layer 35, specifically in the second region 8 (electrode layer formation process).

[0088] Thereafter, the semiconductor substrate 11 is cut using, for example, laser technology along the cut lines L shown in Fig. 8. Through the above steps, two back-contact type solar cells 1 of this embodiment are obtained.

[0089] (film production mask) In the following, film formation masks for forming the passivation layer 23 and the first conductivity type semiconductor layer 25, and the passivation layer 33 and the second conductivity type semiconductor layer 35 will be exemplified.

[0090] 9A, 10, 11, 12A, and 13 are diagrams illustrating a film formation mask according to the second embodiment. Specifically, FIG. 9A illustrates a first film formation mask for forming the comb-shaped patterns of the passivation layer 23 and the first-conductivity-type semiconductor layer 25 described above. FIG. 10 is an enlarged view of a portion X of the first film formation mask illustrated in FIG. 9A. FIG. 11 is an enlarged view of a portion XI of the first film formation mask illustrated in FIG. 9A. Meanwhile, FIG. 12A illustrates a second film formation mask for forming the comb-shaped patterns of the passivation layer 33 and the second-conductivity-type semiconductor layer 35 described above. FIG. 13 is an enlarged view of a portion XIII of the second film formation mask illustrated in FIG. 12A.

[0091] <<First film formation mask>> 9A, the first film formation mask 101 has a first pattern opening 111 and a second pattern opening 112 that respectively correspond to the first and second comb-shaped patterns of the two first conductivity type semiconductor layers 25. The first pattern opening 111 and the second pattern opening 112 are symmetrical with respect to a straight line along the first direction, specifically, the above-mentioned cut line L.

[0092] The first pattern opening 111 has a first busbar opening 111b corresponding to the busbar portion 25b in the first pattern of the first conductivity type semiconductor layer 25, and a plurality of first finger openings 111f corresponding to the plurality of finger portions 25f in the first pattern of the first conductivity type semiconductor layer 25. The first busbar opening 111b has a strip shape extending in the first direction (X direction). The first finger opening 111f has a strip shape extending in the second direction (Y direction) from the first busbar opening 111b and is spaced apart in the first direction.

[0093] Similarly, the second pattern opening 112 has a second busbar opening 112b corresponding to the busbar portion 25b in the second pattern of the first conductivity type semiconductor layer 25, and a plurality of second finger openings 112f corresponding to the plurality of finger portions 25f in the second pattern of the first conductivity type semiconductor layer 25. The second busbar opening 112b has a strip shape extending in the first direction (X direction). The second finger opening 112f has a strip shape extending in the second direction (Y direction) from the second busbar opening 112b and is spaced apart in the first direction.

[0094] The first film formation mask 101 is a metal mask made of a metal material such as stainless steel or Hastelloy, and includes a frame portion 120, a plurality of first finger mask portions 131 and a plurality of second finger mask portions 132, a first joint portion 141 and a second joint portion 142.

[0095] Frame portion 120 surrounds first pattern opening 111 and second pattern opening 112. Frame portion 120 is composed of first frame side portion 121 and second frame side portion 122 that sandwich first pattern opening 111 and second pattern opening 112 in a first direction (X direction), a third frame side portion 123 and one fourth frame side portion 124 that sandwich first pattern opening 111 in a second direction (Y direction), and the third frame side portion 123 and the other fourth frame side portion 124 that sandwich second pattern opening 112 in the second direction (Y direction). One fourth frame side portion 124 is adjacent to first bus bar opening 111b, and the other fourth frame side portion 124 is adjacent to second bus bar opening 112b.

[0096] The first finger mask portions 131 are respectively arranged between adjacent first finger openings 111f among the first finger openings 111f and are spaced apart in the first direction (X direction). Each of the first finger mask portions 131 has a strip shape extending in the second direction (Y direction) from the third frame side portion 123 toward the first bus bar opening 111b.

[0097] Similarly, the second finger mask portions 132 are respectively arranged between adjacent second finger openings 112f among the second finger openings 112f and are spaced apart in the first direction (X direction). Each of the second finger mask portions 132 has a strip shape extending in the second direction (Y direction) from the third frame side portion 123 toward the second bus bar opening 112b.

[0098] The first joint portion (bonding portion) 141 joins (joins) each of the first finger mask portions 131 to at least one of the frame portion 120 and the adjacent first finger mask portion 131 in a portion of the first pattern opening 111. For example, the first joint portion 141 may join each of the first finger mask portions 131 to the frame portion 120 or the adjacent first finger mask portion 131 in a portion of the first finger opening 111f of the first pattern opening 111. Furthermore, the first joint portion 141 may join each of the first finger mask portions 131 to the frame portion 120 in at least a portion of the first busbar opening 111b of the first pattern opening 111.

[0099] Specifically, the first joint portion 141 joins the first finger mask portion 131 adjacent to the first frame side portion 121 to the first frame side portion 121 in a portion of the first finger opening 111f adjacent to the first frame side portion 121, for example, in a portion on the first bus bar opening 111b side. The first joint portion 141 also joins the first finger mask portion 131 adjacent to the second frame side portion 122 to the second frame side portion 122 in a portion of the first finger opening 111f adjacent to the second frame side portion 122, for example, in a portion on the first bus bar opening 111b side. The first joint portion 141 also joins adjacent first finger mask portions 131 in a portion of the remaining first finger opening 111f, for example, in a portion on the first bus bar opening 111b side.

[0100] Furthermore, first joint portion 141 joins the end portion of first finger mask portion 131 and one of fourth frame side portions 124 at first bus bar opening 111b.

[0101] 9B, the first joint portion 141 may join each of the first finger mask portions 131 to the frame portion 120 and the adjacent first finger mask portion 131 only at the first finger openings 111f of the first pattern openings 111. Alternatively, as shown in FIG. 9C, the first joint portion 141 may join each of the first finger mask portions 131 to the frame portion 120 only at the first busbar openings 111b of the first pattern openings 111.

[0102] 9A or 8B, as shown in Fig. 9D, the first joint portion 141 may further join the first finger mask portion 131 adjacent to the first frame side portion 121 to the first frame side portion 121 at one or more other parts different from the part on the first bus bar opening 111b side of the first finger opening 111f adjacent to the first frame side portion 121. The first joint portion 141 may further join the first finger mask portion 131 adjacent to the second frame side portion 122 to the second frame side portion 122 at one or more other parts different from the part on the first bus bar opening 111b side of the first finger opening 111f adjacent to the second frame side portion 122. Furthermore, first joint portion 141 may further join adjacent first finger mask portions 131 together at one or more other portions different from the portion on the first bus bar opening 111b side of the remaining first finger opening 111f.

[0103] Also, in Figure 9A or 9C, the first joint portion 141 may join each end of the first finger mask portion 131 to the other fourth frame side portion 124 in a portion of the first busbar opening 111b of the first pattern opening 111, for example, a portion on an extension line from each of the first finger mask portions 131 in the second direction.

[0104] The first joint part 141 may have a mesh shape as shown in Fig. 10. Each mesh shape may be a hexagon as shown in Fig. 10, but is not limited to this and may have various polygonal shapes or may be a circle. Alternatively, the first joint part 141 may have a shape of a plurality of straight lines.

[0105] The line width of the pattern of the first joint part 141 is preferably 0.1 mm or more and 1.0 mm or less. If it is 0.1 mm or more, it is possible to prevent the pattern of the first joint part 141 from being cut. On the other hand, if it is 1.0 mm or less, the material gas can reach under the pattern of the first joint part 141 during film formation by the CVD method or the PVD method, and the patterns of the passivation layer 23 and the first conductivity type semiconductor layer 25 can be formed under the pattern of the first joint part 141.

[0106] Similarly, the second joint portion (bonding portion) 142 joins (joins) each of the second finger mask portions 132 to at least one of the frame portion 120 and the adjacent second finger mask portion 132 in a portion of the second pattern opening 112. For example, the second joint portion 142 may join each of the second finger mask portions 132 to the frame portion 120 or the adjacent second finger mask portion 132 in a portion of the second finger opening 112f of the second pattern opening 112. Furthermore, the second joint portion 142 may join each of the second finger mask portions 132 to the frame portion 120 in at least a portion of the second busbar opening 112b of the second pattern opening 112.

[0107] Specifically, the second joint portion 142 joins the second finger mask portion 132 adjacent to the first frame side portion 121 to the first frame side portion 121 in a portion of the second finger opening 112f adjacent to the first frame side portion 121, for example, in a portion on the second bus bar opening 112b side. The second joint portion 142 also joins the second finger mask portion 132 adjacent to the second frame side portion 122 to the second frame side portion 122 in a portion of the second finger opening 112f adjacent to the second frame side portion 122, for example, in a portion on the second bus bar opening 112b side. The second joint portion 142 also joins adjacent second finger mask portions 132 in a portion of the remaining second finger opening 112f, for example, in a portion on the second bus bar opening 112b side.

[0108] Additionally, the second joint portion 142 joins the end portion of the second finger mask portion 132 and the other fourth frame side portion 124 at the second bus bar opening 112b.

[0109] 9B, the second joint portion 142 may join each of the second finger mask portions 132 to the frame portion 120 and the adjacent second finger mask portion 132 only at the second finger openings 112f of the second pattern openings 112. Alternatively, as shown in FIG. 9C, the second joint portion 142 may join each of the second finger mask portions 132 to the frame portion 120 only at the second bus bar openings 112b of the second pattern openings 112.

[0110] 9A or 8B, as shown in Fig. 9D, the second joint portion 142 may further join the second finger mask portion 132 adjacent to the first frame side portion 121 to the first frame side portion 121 at one or more other parts different from the part on the second bus bar opening 112b side of the second finger opening 112f adjacent to the first frame side portion 121. The second joint portion 142 may further join the second finger mask portion 132 adjacent to the second frame side portion 122 to the second frame side portion 122 at one or more other parts different from the part on the second bus bar opening 112b side of the second finger opening 112f adjacent to the second frame side portion 122. Furthermore, the second joint portion 142 may further join adjacent second finger mask portions 132 at one or more other portions different from the portion on the second bus bar opening 112b side of the remaining second finger opening 112f.

[0111] Also, in Figure 9A or 9C, the second joint portion 142 may join each end of the second finger mask portion 132 to the other fourth frame side portion 124 in a portion of the second busbar opening 112b of the second pattern opening 112, for example, a portion on an extension line from each of the first finger mask portions 131 in the second direction.

[0112] The second joint part 142 may have a mesh shape as shown in Fig. 11. Each mesh shape may be hexagonal as shown in Fig. 11, but is not limited to this and may have various polygonal shapes or may be circular. Alternatively, the second joint part 142 may have a shape of multiple straight lines.

[0113] The line width of the pattern of the second joint part 142 is preferably 0.1 mm or more and 1.0 mm or less. If it is 0.1 mm or more, it is possible to prevent the pattern of the second joint part 142 from being cut. On the other hand, if it is 1.0 mm or less, the material gas can reach under the pattern of the second joint part 142 during film formation by the CVD method or the PVD method, and the patterns of the passivation layer 23 and the first conductivity type semiconductor layer 25 can be formed under the pattern of the second joint part 142.

[0114] <<Second film deposition mask>> 12A , the second film formation mask 201 has a first pattern opening 211 and a second pattern opening 212 that correspond to the first and second comb-shaped patterns of the two second conductivity-type semiconductor layers 35. The first pattern opening 211 and the second pattern opening 212 are symmetrical with respect to a straight line along the first direction, specifically, the cut line L described above.

[0115] The first pattern opening 211 has a first busbar opening 211b corresponding to the busbar portion 35b in the first pattern of the second conductivity type semiconductor layer 35, and a plurality of first finger openings 211f corresponding to the plurality of finger portions 35f in the second pattern of the second conductivity type semiconductor layer 35. The first busbar opening 211b has a strip shape extending in the first direction (X direction). The first finger opening 111f has a strip shape extending in the second direction (Y direction) from the first busbar opening 111b and is spaced apart in the first direction.

[0116] Similarly, the second pattern opening 212 has a second busbar opening 212b corresponding to the busbar portion 35b in the second pattern of the second conductivity-type semiconductor layer 35, and a plurality of second finger openings 112f corresponding to the plurality of finger portions 35f in the second pattern of the second conductivity-type semiconductor layer 35. The second busbar opening 212b has a strip shape extending in the first direction (X direction). The second finger opening 212f has a strip shape extending in the second direction (Y direction) from the second busbar opening 212b and is spaced apart in the first direction. The first busbar opening 211b and the second busbar opening 212b are adjacent to each other.

[0117] The second film formation mask 201 is a metal mask made of a metal material such as stainless steel or Hastelloy, and includes a frame portion 220, a plurality of first finger mask portions 231 and second finger mask portions 232, and a first joint portion 241 and a second joint portion 242.

[0118] The frame portion 120 surrounds the first pattern opening 211 and the second pattern opening 212. The frame portion 120 is composed of a first frame side portion 221 and a second frame side portion 222 that sandwich the first pattern opening 211 and the second pattern opening 212 in the first direction (X direction), and one third frame side portion 223 and the other third frame side portion 223 that sandwich the first pattern opening 211 and the second pattern opening 212 in the second direction (Y direction).

[0119] The first finger mask portions 231 are respectively arranged between adjacent first finger openings 211f among the first finger openings 211f and are spaced apart in the first direction (X direction). Each of the first finger mask portions 231 has a strip shape extending in the second direction (Y direction) from one third frame side portion 223 toward the first bus bar opening 211b.

[0120] Similarly, the second finger mask portions 232 are respectively arranged between adjacent ones of the second finger openings 212f and are spaced apart in the first direction (X direction). Each of the second finger mask portions 232 has a strip shape extending in the second direction (Y direction) from the other third frame side portion 223 toward the second bus bar opening 212b.

[0121] The first joint portion (bonding portion) 241 joins (joins) each of the first finger mask portions 231 to at least one of the frame portion 220, the adjacent first finger mask portion 231, and the second finger mask portion 232 in a portion of the first pattern opening 211. For example, the first joint portion 241 may join each of the first finger mask portions 231 to the frame portion 220 or the adjacent first finger mask portion 231 in a portion of the first finger opening 211f of the first pattern opening 211. Furthermore, the first joint portion 241 may join each of the first finger mask portions 231 to each of the second finger mask portions 232 in at least a portion of the first bus bar opening 211b of the first pattern opening 211.

[0122] Specifically, the first joint portion 241 joins the first finger mask portion 231 adjacent to the first frame side portion 221 to the first frame side portion 221 in a part of the first finger opening 211f adjacent to the first frame side portion 221, for example, in a part on the first bus bar opening 211b side. The first joint portion 241 also joins the first finger mask portion 231 adjacent to the second frame side portion 222 to the second frame side portion 222 in a part of the first finger opening 211f adjacent to the second frame side portion 222, for example, in a part on the first bus bar opening 211b side. The first joint portion 241 also joins adjacent first finger mask portions 231 in a part of the remaining first finger opening 211f, for example, in a part on the first bus bar opening 211b side.

[0123] In addition, the first joint portion 241 cooperates with the second joint portion 242 described later to join the end of the first finger mask portion 231 and the end of the second finger mask portion 232 at the first bus bar opening 211b and the second bus bar opening 212b described later.

[0124] 12B, the first joint portion 241 may join each of the first finger mask portions 231 to the frame portion 220 and the adjacent first finger mask portion 231 only at the first finger opening 211f of the first pattern opening 211. Alternatively, as shown in FIG. 12C, the first joint portion 241 may cooperate with a second joint portion 242 (described later) to join each of the first finger mask portions 231 to each of the second finger mask portions 232 only at the first bus bar opening 211b of the first pattern opening 211 and the second bus bar opening 212b of the second pattern opening 212 (described later).

[0125] 12A or 12B, as shown in Fig. 12D, the first joint portion 241 may further join the first finger mask portion 231 adjacent to the first frame side portion 221 to the first frame side portion 221 at one or more other parts different from the part on the first bus bar opening 211b side of the first finger opening 211f adjacent to the first frame side portion 221. The first joint portion 241 may further join the first finger mask portion 231 adjacent to the second frame side portion 222 to the second frame side portion 222 at one or more other parts different from the part on the first bus bar opening 211b side of the first finger opening 211f adjacent to the second frame side portion 222. Furthermore, first joint portion 241 may further join adjacent first finger mask portions 231 at one or more other portions different from the portion on the first bus bar opening 211b side of the remaining first finger opening 211f.

[0126] Also, in Figure 12A or Figure 12C, the first joint portion 241 may cooperate with the second joint portion 242 described later to join the ends of each of the first finger mask portions 231 and the ends of the second finger mask portions 232 at a portion of the first bus bar opening 111b of the first pattern opening 211 and a portion of the second bus bar opening 112b of the second pattern opening 212 described later, for example, at a portion on an extension line in the second direction from each of the first finger mask portions 231 and each of the second finger mask portions 232.

[0127] The first joint part 241 may have a mesh shape as shown in Fig. 13. Each mesh shape may be a hexagon as shown in Fig. 13, but is not limited to this and may have various polygonal shapes or may be a circle. Alternatively, the first joint part 241 may have a shape of a plurality of straight lines.

[0128] The line width of the pattern of the first joint part 241 is preferably 0.1 mm or more and 1.0 mm or less. If it is 0.1 mm or more, it is possible to prevent the pattern of the first joint part 241 from being cut. On the other hand, if it is 1.0 mm or less, the material gas can reach under the pattern of the first joint part 241 during film formation by the CVD method or the PVD method, and the patterns of the passivation layer 33 and the second conductivity type semiconductor layer 35 can be formed under the pattern of the first joint part 241.

[0129] Similarly, the second joint portion (bonding portion) 242 joins (joins) each of the second finger mask portions 232 to at least one of the frame portion 220, the adjacent second finger mask portion 232, and the first finger mask portion 231 in a portion of the second pattern opening 212. For example, the second joint portion 242 may join each of the second finger mask portions 232 to the frame portion 220 or the adjacent second finger mask portion 232 in a portion of the second finger opening 212f of the second pattern opening 212. Furthermore, the second joint portion 242 may join each of the second finger mask portions 232 to each of the first finger mask portions 231 in at least a portion of the second bus bar opening 212b of the second pattern opening 212.

[0130] Specifically, the second joint portion 242 joins the second finger mask portion 232 adjacent to the first frame side portion 221 to the first frame side portion 221 in a portion of the second finger opening 212f adjacent to the first frame side portion 221, for example, in a portion on the second bus bar opening 212b side. The second joint portion 242 also joins the second finger mask portion 232 adjacent to the second frame side portion 222 to the second frame side portion 222 in a portion of the second finger opening 212f adjacent to the second frame side portion 222, for example, in a portion on the second bus bar opening 212b side. The second joint portion 242 also joins adjacent second finger mask portions 232 in a portion of the remaining second finger opening 212f, for example, in a portion on the second bus bar opening 212b side.

[0131] In addition, the second joint portion 242 cooperates with the above-mentioned first joint portion 241 to join the end of the second finger mask portion 232 and the end of the first finger mask portion 231 at the second bus bar opening 212b and the above-mentioned first bus bar opening 211b.

[0132] 12B, the second joint portion 242 may join each of the second finger mask portions 232 to the frame portion 220 and the adjacent second finger mask portion 232 only at the second finger openings 212f of the second pattern openings 212. Alternatively, as shown in FIG. 12C, the second joint portion 242 may cooperate with the above-described first joint portion 241 to join each of the second finger mask portions 232 to each of the first finger mask portions 231 only at the second bus bar openings 212b of the second pattern openings 212 and the first bus bar openings 211b of the first pattern openings 211.

[0133] 12A or 12B, as shown in Fig. 12D, the second joint portion 242 may further join the second finger mask portion 232 adjacent to the first frame side portion 221 to the first frame side portion 221 at one or more other parts different from the part on the second bus bar opening 212b side of the second finger opening 212f adjacent to the first frame side portion 221. The second joint portion 242 may further join the second finger mask portion 232 adjacent to the second frame side portion 222 to the second frame side portion 222 at one or more other parts different from the part on the second bus bar opening 212b side of the second finger opening 212f adjacent to the second frame side portion 222. Furthermore, the second joint portion 242 may further join adjacent second finger mask portions 232 together at one or more other portions different from the portion on the second bus bar opening 212b side of the remaining second finger opening 212f.

[0134] Also, in Figure 12A or Figure 12C, the second joint portion 242 may cooperate with the first joint portion 241 described above to join the ends of each of the second finger mask portions 232 to the ends of the first finger mask portions 231 at a portion of the second busbar opening 112b of the second pattern opening 212 and the first busbar opening 111b of the first pattern opening 211, for example, at a portion on an extension line in the second direction from each of the first finger mask portions 231 and each of the second finger mask portions 232.

[0135] The second joint portion 242 may be in a mesh shape as shown in Fig. 13. Each mesh shape may be hexagonal as shown in Fig. 13, but is not limited to this and may be in various polygonal shapes or may be circular. Alternatively, the second joint portion 242 may be in the shape of a plurality of straight lines.

[0136] The line width of the pattern of the second joint portion 242 is preferably 0.1 mm or more and 1.0 mm or less. If it is 0.1 mm or more, it is possible to prevent the pattern of the second joint portion 242 from being cut. On the other hand, if it is 1.0 mm or less, the material gas can reach under the pattern of the second joint portion 242 during film formation by the CVD method or the PVD method, and the patterns of the passivation layer 33 and the second conductivity type semiconductor layer 35 can be formed under the pattern of the second joint portion 242.

[0137] As described above, according to the first film formation mask 101 of the second embodiment, the first joint portions 141 join each of the first finger mask portions 131 to at least one of the frame portion 120 and the adjacent first finger mask portion 131 in a part of the first pattern opening 111. Furthermore, the second joint portions 142 join each of the second finger mask portions 132 to at least one of the frame portion 120 and the adjacent second finger mask portion 132 in a part of the second pattern opening 112. This determines the positions of the first finger mask portions 131 and the second finger mask portions 132, thereby improving the film formation accuracy of the patterns of the passivation layer 23 and the first conductivity-type semiconductor layer 25.

[0138] Similarly, according to the second film formation mask 201 of the second embodiment, the first joint portions 241 join each of the first finger mask portions 231 to at least one of the frame portion 220 and the adjacent first finger mask portion 231 and second finger mask portion 232 in a part of the first pattern opening 211. Furthermore, the second joint portions 242 join each of the second finger mask portions 232 to at least one of the frame portion 220 and the adjacent second finger mask portion 232 and first finger mask portion 231 in a part of the second pattern opening 212. This determines the positions of the first finger mask portions 231 and the second finger mask portions 232, thereby improving the film formation accuracy of the patterns of the passivation layer 33 and the second conductivity-type semiconductor layer 35.

[0139] Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments and various modifications and variations are possible. For example, the above-described embodiments illustrate a deposition mask for depositing a comb-shaped pattern of a first conductivity type semiconductor layer or a second conductivity type semiconductor layer on a semiconductor substrate of a back-contact solar cell. However, the features of the present invention are not limited to this and can also be applied to deposition masks for depositing comb-shaped patterns of various materials on the substrates of various products. [Explanation of symbols]

[0140] 1. Solar cells 7 First area 7b Busbar section 7f Finger section 8 Second area 8b Busbar section 8f Finger section 11 Semiconductor substrate 13,23,33 Passivation layer 15 Optical adjustment layer 25 First conductivity type semiconductor layer 25b Busbar section 25f Finger part 27 1st electrode layer 28 First transparent electrode layer 29 First metal electrode layer 35 Second conductivity type semiconductor layer 35b Busbar section 35f Finger part 37 Second electrode layer 38 Second transparent electrode layer 39 Second metal electrode layer 100 First film formation mask 110,210 pattern opening 110b, 210b busbar opening 110f, 210f finger opening 120,220 Frame 121,221 1st frame side 122,222 2nd frame side 123,223 Third frame side 124,224 4th frame side 130,230 Finger mask section 140,240 Joint 200 Second film formation mask 101 First film formation mask 111,211 First pattern opening 111b, 211b First bus bar opening 111f, 211f First finger opening 112,212 Second pattern opening 112b, 212b Second bus bar opening 112f, 212f Second finger opening 120,220 Frame 121,221 1st frame side 122,222 2nd frame side 123,223 Third frame side 124 4th frame side 131,231 First Finger Mask Section 132,232 Second finger mask section 141,241 First joint 142,242 Second joint 201 Second film formation mask

Claims

1. A metal film-forming mask for forming a comb-shaped pattern on a substrate, a pattern opening corresponding to the pattern, a strip-shaped bus bar opening corresponding to the bus bar portion in the pattern and extending in a first direction; a plurality of band-shaped finger openings, each corresponding to a plurality of finger portions in the pattern, extending from the bus bar opening in a second direction intersecting the first direction and spaced apart in the first direction; the pattern opening having a frame portion surrounding the pattern opening, the frame portion including a first frame side portion and a second frame side portion sandwiching the pattern opening in the first direction, and a third frame side portion and a fourth frame side portion sandwiching the pattern opening in the second direction, the fourth frame side portion being adjacent to the bus bar opening; a plurality of strip-shaped finger mask portions that are respectively arranged between adjacent finger openings among the plurality of finger openings, are spaced apart in the first direction, and extend in the second direction from the third frame side portion toward the bus bar opening; a joint portion that joins each of the plurality of finger mask portions to at least one of the frame portion and an adjacent finger mask portion among the plurality of finger mask portions in a part of the pattern opening; A film formation mask comprising:

2. The joint portion is a finger mask portion of the plurality of finger mask portions adjacent to the first frame side portion is joined to the first frame side portion at a part of the bus bar opening side of the finger openings of the plurality of finger mask portions adjacent to the first frame side portion, a finger mask portion of the plurality of finger mask portions adjacent to the second frame side portion is joined to the second frame side portion at a part of the bus bar opening side of the finger openings of the plurality of finger mask portions adjacent to the second frame side portion, Adjacent finger mask portions among the plurality of finger mask portions are joined together at a portion of the remaining finger openings among the plurality of finger openings on the bus bar opening side. The film formation mask according to claim 1 .

3. The joint portion is a finger mask portion adjacent to the first frame side portion and the first frame side portion are further joined together in one or more other portions different from the portion on the bus bar opening side in the finger opening adjacent to the first frame side portion; a finger mask portion adjacent to the second frame side portion and the second frame side portion are further joined together at one or more other portions different from the portion on the bus bar opening side in the finger opening adjacent to the second frame side portion; the adjacent finger mask portions are further joined together at one or more other portions of the remaining finger openings that are different from the portions on the bus bar opening side; The film formation mask according to claim 2 .

4. The film formation mask according to claim 1 , wherein the joint portion joins ends of the plurality of finger mask portions to the fourth frame side portion in at least a part of the bus bar opening.

5. 5. The film formation mask according to claim 1, wherein the joint portion has a mesh shape.

6. A metal film-forming mask for forming a first pattern and a second pattern having a comb shape on a substrate, a first pattern opening corresponding to the first pattern, a first bus bar opening having a strip shape extending in a first direction and corresponding to the bus bar portion in the first pattern; a plurality of first finger openings each corresponding to a plurality of finger portions in the first pattern, the first finger openings extending from the first bus bar opening in a second direction intersecting the first direction and spaced apart in the first direction; the first pattern opening having a second pattern opening corresponding to the second pattern, a second bus bar opening having a strip shape extending in the first direction and corresponding to the bus bar portion in the second pattern; a plurality of second finger openings each corresponding to a plurality of finger portions in the second pattern, the second finger openings extending in the second direction from the second bus bar opening and spaced apart in the first direction; the second pattern opening is symmetrical to the first pattern opening with respect to a line along the first direction; a frame portion surrounding the first pattern opening and the second pattern opening, the frame portion including a first frame side portion and a second frame side portion sandwiching the first pattern opening and the second pattern opening in the first direction, a third frame side portion and one fourth frame side portion sandwiching the first pattern opening in the second direction, and the third frame side portion and the other fourth frame side portion sandwiching the second pattern opening in the second direction, wherein the one fourth frame side portion is adjacent to the first bus bar opening and the other fourth frame side portion is adjacent to the second bus bar opening; a plurality of strip-shaped first finger mask portions that are respectively arranged between adjacent first finger openings among the plurality of first finger openings, are spaced apart in the first direction, and extend in the second direction from the third frame side portion toward the first bus bar opening; a plurality of band-shaped second finger mask portions that are respectively arranged between adjacent second finger openings among the plurality of second finger openings, are spaced apart in the first direction, and extend in the second direction from the third frame side portion toward the second bus bar opening; a first joint portion that joins each of the plurality of first finger mask portions to at least one of the frame portion and an adjacent first finger mask portion among the plurality of first finger mask portions in a part of the first pattern opening; a second joint portion that joins each of the plurality of second finger mask portions to at least one of the frame portion and an adjacent second finger mask portion among the plurality of second finger mask portions in a part of the second pattern opening; A film formation mask comprising:

7. A metal film-forming mask for forming a first pattern and a second pattern having a comb shape on a substrate, a first pattern opening corresponding to the first pattern, a first bus bar opening having a strip shape extending in a first direction and corresponding to the bus bar portion in the first pattern; a plurality of first finger openings each corresponding to a plurality of finger portions in the first pattern, the first finger openings extending from the first bus bar opening in a second direction intersecting the first direction and spaced apart in the first direction; the first pattern opening having a second pattern opening corresponding to the second pattern, a second bus bar opening having a strip shape extending in the first direction and corresponding to the bus bar portion in the second pattern; a plurality of second finger openings each corresponding to a plurality of finger portions in the second pattern, the second finger openings extending in the second direction from the second bus bar opening and spaced apart in the first direction; the second pattern opening is symmetrical to the first pattern opening with respect to a line along the first direction, and the second bus bar opening is adjacent to the first bus bar opening; a frame portion surrounding the first pattern opening and the second pattern opening, the frame portion being configured with a first frame side portion and a second frame side portion sandwiching the first pattern opening and the second pattern opening in the first direction, and one third frame side portion and the other third frame side portion sandwiching the first pattern opening and the second pattern opening in the second direction; a plurality of strip-shaped first finger mask portions that are respectively arranged between adjacent first finger openings among the plurality of first finger openings, are spaced apart in the first direction, and extend in the second direction from the one third frame side portion toward the first bus bar opening; a plurality of band-shaped second finger mask portions that are respectively arranged between adjacent second finger openings among the plurality of second finger openings, are spaced apart in the first direction, and extend in the second direction from the other third frame side portion toward the second bus bar opening; a first joint portion that joins each of the plurality of first finger mask portions to at least one of the frame portion, an adjacent first finger mask portion among the plurality of first finger mask portions, and the plurality of second finger mask portions in a portion of the first pattern opening; a second joint portion that joins each of the plurality of second finger mask portions to at least one of the frame portion, an adjacent second finger mask portion among the plurality of second finger mask portions, and the plurality of first finger mask portions in a portion of the second pattern opening; A film formation mask comprising:

8. The first joint portion a first finger mask portion of the plurality of first finger openings adjacent to the first frame side portion is joined to the first frame side portion at a portion of the first bus bar opening side of the plurality of first finger openings adjacent to the first frame side portion; a first finger mask portion of the plurality of first finger openings adjacent to the second frame side portion is joined to the second frame side portion at a portion of the first bus bar opening side of the plurality of first finger openings adjacent to the second frame side portion; adjacent first finger mask portions of the plurality of first finger openings are joined together at a portion of the remaining first finger openings of the plurality of first finger openings on the first bus bar opening side; The second joint portion is a second finger mask portion of the plurality of second finger openings adjacent to the first frame side portion is joined to the first frame side portion at a portion of the second bus bar opening side of the second finger openings adjacent to the first frame side portion, a second finger mask portion of the plurality of second finger openings adjacent to the second frame side portion is joined to the second frame side portion at a portion of the second bus bar opening side of the plurality of second finger openings adjacent to the second frame side portion, Adjacent second finger mask portions among the plurality of second finger openings are joined together at a portion of the remaining second finger openings among the plurality of second finger openings on the second bus bar opening side. The film formation mask according to claim 6 or 7.

9. The first joint portion a first finger mask portion adjacent to the first frame side portion and the first frame side portion are further joined together at one or more other portions different from the portion on the first bus bar opening side in the first finger opening adjacent to the first frame side portion; a first finger mask portion adjacent to the second frame side portion and the second frame side portion are joined together at one or more other portions different from the portion on the first bus bar opening side in the first finger opening adjacent to the second frame side portion; the adjacent first finger mask portions are further joined together in one or more other portions different from the portion on the first bus bar opening side in the remaining first finger opening; The second joint portion is a second finger mask portion adjacent to the first frame side portion and the first frame side portion are further joined together at one or more other portions different from the portion on the second bus bar opening side in the second finger opening adjacent to the first frame side portion; a second finger mask portion adjacent to the second frame side portion and the second frame side portion are further joined together at one or more other portions different from the portion on the second bus bar opening side in the second finger opening adjacent to the second frame side portion; the adjacent second finger mask portions are further joined together at one or more other portions different from the portion on the second bus bar opening side of the remaining second finger opening; The film formation mask according to claim 8 .

10. The first joint portion at least a portion of the first bus bar opening, ends of the plurality of first finger mask portions and one of the fourth frame side portions are joined together; The second joint portion is end portions of the plurality of second finger mask portions and the other fourth frame side portion are joined together in at least a portion of the second bus bar opening; The film formation mask according to claim 6 .

11. 8. The film formation mask according to claim 7, wherein the first joint portion and the second joint portion join ends of the plurality of first finger mask portions and ends of the plurality of second finger mask portions in at least a portion of the first bus bar opening and the second bus bar opening.

12. The film formation mask according to claim 6 , wherein each of the first joint portion and the second joint portion has a mesh shape.

13. 1. A method for manufacturing a back-contact solar cell including a comb-shaped first conductivity type semiconductor layer formed on a portion of a back surface side of a semiconductor substrate, and a comb-shaped second conductivity type semiconductor layer formed on another portion of the back surface side of the semiconductor substrate, 2. The film formation mask according to claim 1, wherein the first conductive type semiconductor layer is formed on the back surface of the semiconductor substrate using a first film formation mask having pattern openings corresponding to the comb-shaped pattern of the first conductive type semiconductor layer; 2. The film formation mask according to claim 1, wherein the second conductive type semiconductor layer is formed on the rear surface of the semiconductor substrate using a second film formation mask having pattern openings corresponding to the comb-shaped pattern of the second conductive type semiconductor layer. How solar cells are manufactured.

14. 1. A method for manufacturing a back-contact solar cell including a comb-shaped first conductivity type semiconductor layer formed on a portion of a back surface side of a semiconductor substrate, and a comb-shaped second conductivity type semiconductor layer formed on another portion of the back surface side of the semiconductor substrate, 7. The film formation mask according to claim 6, wherein the first conductive type semiconductor layer is formed on the back surface of the semiconductor substrate using a first film formation mask having first pattern openings corresponding to the first comb-shaped pattern of the first conductive type semiconductor layer and second pattern openings corresponding to the second comb-shaped pattern of the first conductive type semiconductor layer; 8. The film formation mask according to claim 7, wherein the second conductive type semiconductor layer is formed on the rear surface of the semiconductor substrate using a second film formation mask having first pattern openings corresponding to the first comb-shaped pattern of the second conductive type semiconductor layer and second pattern openings corresponding to the second comb-shaped pattern of the second conductive type semiconductor layer. How solar cells are manufactured.

15. A back-contact solar cell manufactured by the method of manufacturing a solar cell according to claim 13.

16. A back-contact solar cell manufactured by the method of manufacturing a solar cell according to claim 14.

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