Silicon nitride powder and method for producing silicon nitride sintered body

A silicon nitride powder with controlled isoelectric point and zeta potential, produced via nitriding and purification, addresses the insulating and heat dissipation needs of silicon nitride sintered bodies, achieving superior electrical insulation and thermal conductivity.

JP2025154521APending Publication Date: 2025-10-10DENKA CO LTD
View PDF 1 Cites 0 Cited by

Patent Information

Application Number
JP2024057571
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-03-29
Publication Date
2025-10-10

AI Technical Summary

Technical Problem

Existing silicon nitride powders do not adequately address the need for high electrical insulation and heat dissipation properties required for applications such as power modules in automobiles and machine tools.

Method used

A silicon nitride powder with an isoelectric point between pH 7 and 9, a zeta potential maximized at pH 2 to 4, and specific particle size and impurity control, produced through a method involving nitriding, pulverization, acid treatment, and washing to enhance sinterability and reduce impurities.

Benefits of technology

The resulting silicon nitride sintered bodies exhibit excellent insulating and heat dissipation properties, with breakdown voltages of 5 kV or more and thermal conductivity of 50 W/(m·K) or more, suitable for high-performance applications.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2025154521000001
    Figure 2025154521000001
  • Figure 2025154521000002
    Figure 2025154521000002
Patent Text Reader

Abstract

To provide a novel silicon nitride powder capable of producing a sintered body having excellent insulating properties and heat dissipation properties.SOLUTION: A silicon nitride powder has an isoelectric point at a pH of 7-9.SELECTED DRAWING: None
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Aluminum-ceramic joint substrate

    JP2011077546A