Light source, light-emitting module, and mobile terminal

Abstract

To reduce the size of a light source that can adjust the color of mixed-color light.SOLUTION: A light source according to one embodiment of the present disclosure includes: a light-emitting element including: a first light-emitting part configured to emit first light, and a second light-emitting part configured to emit second light having a peak emission wavelength different from a peak emission wavelength of the first light, the first light-emitting part and the second light-emitting part being stacked in a first direction, the first light-emitting part and the second light-emitting part each including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; and a wavelength conversion member disposed on the light-emitting element, and including a first phosphor layer configured to be excited by the first light and emit third light and a second phosphor layer configured to be excited by the second light and emit fourth light having a peak emission wavelength different from a peak emission wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a light source, a light emitting module, and a mobile terminal. [Background technology]

[0002] There is provided a light source that can adjust the color of a mixed light of a plurality of lights emitted from a plurality of light-emitting regions. Patent Document 1 discloses an LED light source that includes a substrate, a plurality of first LED (Light Emitting Diode) dies and second LED dies mounted on the substrate, a white reflective resin filled between the first LED dies and the second LED dies, a first fluorescent resin and a second fluorescent resin that individually cover the first LED dies and the second LED dies, respectively, and a transparent resin that covers the white reflective resin and the first fluorescent resin and the second fluorescent resin. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-27814 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure aims to reduce the size of a light source capable of adjusting the color of mixed color light. [Means for solving the problem]

[0005] A light source according to one embodiment of the present disclosure comprises: a light-emitting element, each of which has a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, and which has a first light-emitting section that emits first light and a second light-emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, wherein the first light-emitting section and the second light-emitting section are stacked in a first direction; and a wavelength conversion member arranged on the light-emitting element, which has a first phosphor layer that is excited by the first light and emits third light, and a second phosphor layer that is excited by the second light and emits fourth light having an emission peak wavelength different from the emission peak wavelength of the third light, wherein the first phosphor layer and the second phosphor layer are stacked in the first direction.

[0006] an optical emitting module according to one embodiment of the present disclosure, comprising: a first light source; and a lens disposed on the first light source, wherein the first light sources each have a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and each have a first light emitting section that emits first light and a second light emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, wherein the first light emitting section and the second light emitting section are stacked in a first direction; and a first wavelength conversion member disposed on the first light emitting element, the first wavelength conversion member having a first phosphor layer that is excited by the first light and emits third light, and a second phosphor layer that is excited by the second light and emits fourth light having an emission peak wavelength different from the emission peak wavelength of the third light, wherein the first phosphor layer and the second phosphor layer are stacked in the first direction.

[0007] a first light source and a lens disposed on the first light source, each of the first light sources having a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and each of the first light sources having a first light emitting unit that emits first light and a second light emitting unit that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, a first light emitting element in which the first light emitting unit and the second light emitting unit are stacked in a first direction, and a first wavelength conversion member disposed on the first light emitting element, the first wavelength conversion member having a first phosphor layer that is excited by the first light and emits third light, and a second phosphor layer that is excited by the second light and emits fourth light having an emission peak wavelength different from the emission peak wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction. [Effects of the Invention]

[0008] According to an embodiment of the present disclosure, it is possible to reduce the size of a light source capable of adjusting the color of mixed color light. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 2 is a top view schematically showing the top surface of the mobile terminal according to the first embodiment. [Figure 2] 2 is a cross-sectional view schematically showing a cross section of the light-emitting module according to the first embodiment taken along line II-II shown in FIG. 1. FIG. [Figure 3A] 1 is a graph showing an example of excitation spectra of a YAG-based phosphor, a SCASN-based phosphor, a KSF-based phosphor, and a CCA-based phosphor. [Figure 3B] 1 is a graph showing an example of the emission spectra of a YAG-based phosphor, a SCASN-based phosphor, a KSF-based phosphor, and a CCA-based phosphor. [Figure 4A] 10 is a graph showing a simulation result for the light source of Example 1 when only the first light-emitting unit is made to emit light. [Figure 4B]10 is a graph showing a simulation result for the light source of Example 1 when only the second light-emitting section is made to emit light. [Figure 5A] 10 is a graph showing a simulation result for the light source of Example 2 when only the first light-emitting unit is made to emit light. [Figure 5B] 10 is a graph showing a simulation result for the light source of Example 2 when only the second light-emitting section is made to emit light. [Figure 6A] 10 is a graph showing a simulation result for the light source of Example 3 when only the first light-emitting unit is made to emit light. [Figure 6B] 10 is a graph showing a simulation result for the light source of Example 3 when only the second light-emitting section is made to emit light. [Figure 7A] 10 is a graph showing a simulation result for the light source of Example 4 when only the first light-emitting unit is made to emit light. [Figure 7B] 10 is a graph showing a simulation result for the light source of Example 4 when only the second light-emitting section is made to emit light. [Figure 8] FIG. 10 is a top view schematically showing the top surface of the light-emitting module according to the second embodiment. [Figure 9] 9 is a schematic cross-sectional view of the light-emitting module according to the second embodiment taken along line IX-IX shown in FIG. 8. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, a light source, a light emitting module, and a mobile terminal according to embodiments of the present disclosure will be described in detail with reference to the drawings. However, the following embodiments are intended to exemplify the light source, the light emitting module, and the mobile terminal for embodying the technical concepts of the embodiments, and are not limited thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of components described in the embodiments are merely illustrative examples and are not intended to limit the scope of the present disclosure. Note that the size, positional relationship, etc. of components shown in each drawing may be exaggerated for clarity. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed descriptions will be omitted as appropriate. An end view showing only the cut surface may be used as a cross-sectional view.

[0011] In the figures below, directions may be indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are mutually perpendicular. In this specification, the direction along the Z-axis is referred to as the "first direction Z." The direction along the X-axis is referred to as the "second direction X." The direction along the Y-axis is referred to as the "third direction Y." In the first direction Z, the direction in which the arrow points is referred to as "up" or "upward," and the opposite side of the direction in which the arrow points is referred to as "down" or "downward." In addition, in the first direction Z, the surface of an object viewed from "up" or "upper" is referred to as the "top surface," and the surface of the object viewed from "down" or "downward" is referred to as the "bottom surface." In this specification, a top view refers to viewing an object from the "upper" or "upper" side of the first direction Z. However, these terms are used for convenience of explanation and do not limit the orientation of the light source, light-emitting module, and mobile terminal during use. The orientations of the light source, light-emitting module, and mobile terminal are arbitrary. In the following embodiments, "along the first direction Z, the second direction X, and the third direction Y" includes the object being tilted within a range of ±10° relative to these directions. Also, in the embodiments, "orthogonal" may include an error of ±10° relative to 90°.

[0012] Furthermore, in this disclosure, unless otherwise specified, polygons such as rectangles are referred to as polygons, including shapes in which the corners of the polygon have been processed, such as by rounding, chamfering, corner removal, or rounding. Shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle portions of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while retaining the polygon as a base are included in the interpretation of "polygon" described in this disclosure.

[0013] The same applies to terms that represent specific shapes, such as trapezoids, circles, and irregularities, as well as polygons. The same also applies to terms that refer to the sides that form the shape. In other words, even if the corners or middle part of a side are processed, the interpretation of "side" includes the processed parts.

[0014] Furthermore, "cover" or "enclose" is not limited to direct contact, but also includes indirect covering, for example, via another member. Furthermore, "place" is not limited to direct contact, but also includes indirect placement, for example, via another member.

[0015] [First embodiment] <Mobile device> An example of the overall configuration of a mobile terminal 1 according to the first embodiment will be described with reference to Fig. 1. Fig. 1 is a top view schematically showing the top surface of the mobile terminal 1 according to the first embodiment. Examples of the mobile terminal 1 include mobile devices such as smartphones and tablet terminals. However, the mobile terminal 1 is not limited to smartphones and tablet terminals.

[0016] As shown in FIG. 1, the mobile terminal 1 includes a housing 2, an imaging element 3, and a light emitting module 10. The imaging element 3 functions as part of the components of the camera included in the mobile terminal 1. The imaging element 3 and the light emitting module 10 are housed, for example, in adjacent spaces within the housing 2. The imaging element 3 and the light emitting module 10 are disposed on the upper surface side of the housing 2. The mobile terminal 1 also includes a display screen, such as a liquid crystal display or an organic EL display, on the lower surface side of the housing 2.

[0017] The imaging element 3 captures an image of a subject. The imaging element 3 is a photoelectric conversion element that receives external light, including light reflected from the subject, and converts the received optical signal into an electrical signal. The camera of the mobile terminal 1 can capture still images and / or videos through the electrical signal from the imaging element 3. In the example shown in FIG. 1, the light emitting module 10 is used as a light emitting module for a flash that emits light to illuminate the subject. However, the light emitting module 10 may be used for purposes other than as a light emitting module for a flash in the mobile terminal 1. For example, the light emitting module 10 may be used as a torch light (flashlight) in the mobile terminal 1 at night or in a dark place. In particular, it is preferable that the torch light in the mobile terminal 1 has a color adjustment function, since the desired color of the illuminated light may vary depending on the user's nationality, race, age, etc.

[0018] <Light-emitting module 10> Next, an example of the overall configuration of the light-emitting module 10 according to the first embodiment will be described with reference to Fig. 2. Fig. 2 is a cross-sectional view schematically showing a cross section of the light-emitting module 10 taken along line II-II shown in Fig. 1.

[0019] As shown in FIG. 2, the light-emitting module 10 includes a light source 100 and a lens 200. The light-emitting module 10 may further include a substrate 300 that supports the light source 100 and the lens 200. The substrate 300 is, for example, a wiring board having an insulating base and wiring disposed on at least the upper surface of the base, electrically connecting an external power supply circuit and the light source 100. The wiring may be disposed inside and / or on the lower surface of the base. Examples of insulating bases include polyimide resin, polyester resin, glass epoxy, BT resin, aluminum nitride (AlN), silicon nitride (Si3N4), and aluminum oxide (Al2O3). The light-emitting module 10 may further include, on the substrate 300, an electronic circuit such as a large-scale integrated circuit (LSI) that controls the light-emitting operation of the light source 100. The substrate 300 may also be a semiconductor substrate equipped with a control circuit function such as an application-specific integrated circuit (ASIC) that controls the light-emitting operation of the light source 100.

[0020] The lens 200 includes a lens portion 210 disposed above the light source 100. As shown in Fig. 2, the lens 200 may further include a support portion 220 that supports the lens portion 210. The lens portion 210 and the support portion 220 may be structurally integrated members or may be separate members. Examples of materials that may be used to form the lens portion 210 and the support portion 220 include translucent materials such as polycarbonate resin, acrylic resin, silicone resin, and glass.

[0021] The lens unit 210 transmits light emitted from the light source 100. The light emitted from the light source 100 that has passed through the lens unit 210 proceeds to the outside of the mobile terminal 1. The lens unit 210 shown in FIG. 2 is a lens having a Fresnel shape on the bottom surface. However, the shape of the lens unit 210 is not limited to this. The lens unit 210 may have other shapes, such as a biconvex lens or a plano-convex lens. The support unit 220 has an annular or frame-like shape surrounding the light source 100 when viewed from above. The bottom end of the support unit 220 is joined to the top surface of the substrate 300 directly or via a joining member.

[0022] <Light source 100> The light source 100 includes a light emitting element 110 and a wavelength conversion member 160. As shown in FIG. 2, the wavelength conversion member 160 is disposed on the light emitting element 110. The light source 100 may further include other components such as a light blocking member 190 that covers the side surfaces of the light emitting element 110 and the wavelength conversion member 160, and a light-transmitting member that covers the upper surface of the wavelength conversion member 160. Here, in this specification, light-transmitting refers to a light transmittance of 60% or more, preferably 80% or more. For ease of explanation, the light-transmitting member that covers the upper surface of the wavelength conversion member 160 is not shown in the drawings.

[0023] (Light emitting element 110) An example of the configuration of the light-emitting element 110 will be described. As shown in FIG. 2, the light-emitting element 110 includes a first light-emitting section 120 and a second light-emitting section 130. The first light-emitting section 120 and the second light-emitting section 130 are stacked in a first direction Z. In this example, a tunnel junction layer 110T is interposed between the first light-emitting section 120 and the second light-emitting section 130. The first light-emitting section 120 emits a first light L1. The second light-emitting section 130 emits a second light L2. The peak emission wavelength of the first light L1 is different from the peak emission wavelength of the second light L2. In other words, the first light-emitting section 120 and the second light-emitting section 130 emit light of different colors. The light-emitting element 110 may further include other components, such as an element substrate 140 and electrodes including a first electrode 151, a second electrode 152, and a third electrode 153.

[0024] The first light emitting unit 120 is a semiconductor structure including a first semiconductor layer 121, a light emitting layer 122, and a second semiconductor layer 123. As shown in FIG. 2, the first semiconductor layer 121, the light emitting layer 122, and the second semiconductor layer 123 are stacked in this order in the first direction Z. The first semiconductor layer 121 and the second semiconductor layer 123 have different conductivity types. In the example shown in FIG. 2, the first semiconductor layer 121 is made of a p-type semiconductor, and the second semiconductor layer 123 is made of an n-type semiconductor. However, the opposite may be true, where the first semiconductor layer 121 is made of an n-type semiconductor and the second semiconductor layer 123 is made of a p-type semiconductor. In the first light emitting unit 120, the first light L1 is emitted from the light emitting layer 122. The light emitting layer 122 may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers.

[0025] In the first light emitting section 120, the first semiconductor layer 121, the light emitting layer 122, and the second semiconductor layer 123 are each made of, for example, a nitride semiconductor. x Al y Ga 1-x-y The term "light-emitting layer 122" includes semiconductors of all compositions in which the composition ratios x and y are varied within the respective ranges in a chemical formula of N (0≦x, 0≦y, x+y≦1). The peak emission wavelength of the first light L1 emitted by the light-emitting layer 122 is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and even more preferably 440 nm or more and 460 nm or less. The light-emitting layer 122 emits blue light, for example, as the first light L1. However, the peak emission wavelength of the first light L1 is not limited to this. Furthermore, the semiconductors constituting each of the first semiconductor layer 121, the light-emitting layer 122, and the second semiconductor layer 123 are not limited to nitride semiconductors.

[0026] The second light emitting unit 130 is a semiconductor structure having a first semiconductor layer 131, a light emitting layer 132, and a second semiconductor layer 133. As shown in Fig. 2, the first semiconductor layer 131, the light emitting layer 132, and the second semiconductor layer 133 are stacked in this order in the first direction Z.

[0027] The first semiconductor layer 131 and the second semiconductor layer 133 have different conductivity types. In the example shown in FIG. 2, the first semiconductor layer 131 is made of a p-type semiconductor, and the second semiconductor layer 133 is made of an n-type semiconductor. However, the opposite may also be true, where the first semiconductor layer 131 is made of an n-type semiconductor, and the second semiconductor layer 133 is made of a p-type semiconductor. Second light L2 is emitted from the light emitting layer 132. The light emitting layer 132 may have a single quantum well (SQW) structure, or may have a multiple quantum well (MQW) structure including multiple well layers.

[0028] In the second light emitting section 130, the first semiconductor layer 131, the light emitting layer 132, and the second semiconductor layer 133 are each made of, for example, a nitride semiconductor. x Al y Ga 1-x-y The second light L2 may be, for example, ultraviolet light. For example, the peak emission wavelength of the second light L2 is shorter than the peak emission wavelength of the first light L1. In addition, the semiconductors constituting the first semiconductor layer 131, the light emitting layer 132, and the second semiconductor layer are not limited to nitride semiconductors.

[0029] In the light-emitting element 110, the second light-emitting section 130 is joined to the first light-emitting section 120 via a tunnel junction layer 110T. In the example shown in FIG. 2, the tunnel junction layer 110T is in contact with the upper surface of the second semiconductor layer 123 of the first light-emitting section 120 and the lower surface of the first semiconductor layer 131 of the second light-emitting section 130. The tunnel junction layer 110T includes at least one of a p-type semiconductor layer having a higher acceptor concentration than the acceptor concentration of the first semiconductor layer 131 and an n-type semiconductor layer having a higher donor concentration than the second semiconductor layer 123. An example of the tunnel junction layer 110T includes a p-type semiconductor layer containing a high concentration of magnesium (Mg) and an n-type semiconductor layer containing a high concentration of silicon (Si). This allows for efficient transfer of electrons and holes.

[0030] In the light-emitting element 110, the second light-emitting section 130 is preferably arranged closer to the wavelength conversion member 160 than the first light-emitting section 120. By arranging the second light-emitting section 130, which has a shorter emission peak wavelength, on the wavelength conversion member 160 side (i.e., on the light extraction surface side), it is possible to reduce absorption of the second light L2 emitted by the second light-emitting section 130 by the semiconductor layer constituting the first light-emitting section when it passes through the first light-emitting section 120.

[0031] 2, the element substrate 140 is disposed between the second light-emitting unit 130 and the wavelength conversion member 160. The element substrate 140 is light-transmitting. Examples of materials that may be used to form the element substrate 140 include insulating materials such as sapphire, spinel, glass, aluminum nitride, and silicon carbide. However, the materials that may be used to form the element substrate 140 are not limited to these. The first light L1 and the second light L2 pass through the element substrate 140 and travel toward the wavelength conversion member 160.

[0032] The first electrode 151 is connected to the second semiconductor layer 123 of the first light-emitting unit 120. The second electrode 152 is connected to the second semiconductor layer 133 of the second light-emitting unit 130. The third electrode 153 is connected to the first semiconductor layer 121 of the first light-emitting unit 120. By selecting two of the first electrode 151, the second electrode 152, and the third electrode 153 and applying a voltage to them, it is possible to adjust the wavelength of light emitted by the light-emitting element 110. By applying a voltage to the first electrode 151 and the third electrode 153, the first light-emitting unit 120 can be made to emit light. By applying a voltage to the first electrode 151 and the second electrode 152, the second light-emitting unit 130 can be made to emit light. Furthermore, by applying a voltage to the second electrode 152 and the third electrode 153, both the first light-emitting unit 120 and the second light-emitting unit 130 can be made to emit light.

[0033] Examples of materials constituting each of the first electrode 151, the second electrode 152, and the third electrode 153 include elemental metals such as gold, silver, aluminum, nickel, rhodium, copper, titanium, platinum, palladium, molybdenum, chromium, and tungsten, or alloy materials containing these metals. However, the materials constituting each of the first electrode 151, the second electrode 152, and the third electrode 153 are not limited to these. Furthermore, each of the first electrode 151, the second electrode 152, and the third electrode 153 may have a single-layer structure made of a single metal material or alloy material, or may have a layered structure in which multiple metal materials or alloy materials are layered in the first direction Z.

[0034] Each of the first electrode 151, the second electrode 152, and the third electrode 153 is connected to the wiring of the substrate 300 directly or via a conductive bonding member. That is, each of the first electrode 151, the second electrode 152, and the third electrode 153 is connected to an external power supply circuit via the wiring of the substrate 300. This connects the first light-emitting unit 120 and the second light-emitting unit 130 to the power supply circuit. The control circuit included in the light-emitting module 10 can control the first light-emitting unit 120 and the second light-emitting unit 130 individually.

[0035] The control circuit included in the light-emitting module 10 may control the light-emitting operations of the first light-emitting unit 120 and the second light-emitting unit 130 so that the first light L1 and the second light L2 are emitted at the same timing, or may control the light-emitting operations of the first light-emitting unit 120 and the second light-emitting unit 130 so that the first light L1 and the second light L2 are emitted at different timings, for example, alternately. Furthermore, the control circuit included in the light-emitting module 10 may control the emission intensities of the first light L1 and the second light L2 by adjusting the value of a direct current supplied from the power supply circuit to the first light-emitting unit 120 and the second light-emitting unit 130, or may control the emission intensities of the first light L1 and the second light L2 by adjusting the duty ratio of a pulse current supplied from the power supply circuit to the first light-emitting unit 120 and the second light-emitting unit 130.

[0036] (wavelength conversion member 160) An example of the configuration of the wavelength conversion member 160 will be described. The wavelength conversion member 160 converts the wavelengths of at least a portion of the first light L1 emitted by the first light emitter 120 and at least a portion of the second light L2 emitted by the second light emitter 130, and emits light of different wavelengths. As shown in FIG. 2, the wavelength conversion member 160 includes a first phosphor layer 170 and a second phosphor layer 180. The first phosphor layer 170 and the second phosphor layer 180 are stacked in a first direction Z. The first phosphor layer 170 and the second phosphor layer 180 are each disposed above the light emitting element 110 (i.e., on the light extraction surface side of the light emitting module 10) and at a position overlapping the light emitting element 110 in a top view.

[0037] Each of the first phosphor layer 170 and the second phosphor layer 180 includes a light-transmitting base and a phosphor. Examples of the light-transmitting base included in each of the first phosphor layer 170 and the second phosphor layer 180 include inorganic materials such as ceramics such as aluminum nitride, aluminum oxide, yttrium oxide, and YAP (yttrium aluminum perovskite), glass, and sapphire, and organic materials such as resins or hybrid resins containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, phenolic resin, and fluororesin. The phosphor included in each of the first phosphor layer 170 and the second phosphor layer 180 may be contained inside the light-transmitting base or may be arranged in a layer on the upper or lower surface of the light-transmitting base.

[0038] The first phosphor layer 170 is excited by the first light L1 emitted by the first light emitter 120 and emits a third light L3. Here, "the first phosphor layer 170 is excited by the first light L1 emitted by the first light emitter 120" does not necessarily mean that the first phosphor layer 170 is excited only by the first light L1 emitted by the first light emitter 120. In other words, the first phosphor layer 170 may also be excited by the second light L2 emitted by the second light emitter 130. However, when the first phosphor layer 170 is also excited by the second light L2, it is preferable that the excitation intensity of the first phosphor layer 170 at the emission peak wavelength of the second light L2 is lower than the excitation intensity at the emission peak wavelength of the first light L1.

[0039] The first phosphor layer 170 includes a first phosphor having an excitation intensity at the emission peak wavelength of the second light L2 lower than the excitation intensity at the emission peak wavelength of the first light L1. The first phosphor layer 170 may further include a phosphor different from the first phosphor. For example, the first phosphor layer 170 may further include a phosphor having an emission peak wavelength different from the emission peak wavelength of the first phosphor. For convenience of explanation, one of the phosphors different from the first phosphor in the first phosphor layer 170 is referred to as a "third phosphor." When the first phosphor layer 170 includes multiple types of phosphors, such as the first phosphor and a third phosphor, the third light L3 emitted from the first phosphor layer 170 corresponds to, for example, a mixed light of the light emitted by the first phosphor and the light emitted by the third phosphor. The first phosphor layer 170 may further include another phosphor different from the first phosphor and the third phosphor. At least one of the other phosphors is referred to as a "fourth phosphor." The first phosphor layer 170 may not include the third phosphor, but may include the first phosphor and the fourth phosphor.

[0040] The excitation intensity of the third phosphor at the emission peak wavelength of the second light L2 may be higher than the excitation intensity of the first phosphor at the emission peak wavelength of the second light L2. In this case, the emission peak wavelength of the third phosphor is preferably longer than the emission peak wavelength of the first phosphor. This allows the wavelength range of the third light L3 emitted from the first phosphor layer 170 to be expanded to longer wavelengths in visible light. In other words, the emission spectrum of the third light L3 emitted from the first phosphor layer 170 can have a peak on the longer wavelength side.

[0041] The thickness of the first phosphor layer 170 and the phosphor content can be adjusted appropriately depending on the desired color temperature, chromaticity, etc. of the third light L3. An example of the thickness of the first phosphor layer 170 is 30 μm or more and 300 μm or less. However, the thickness of the first phosphor layer 170 is not limited to this.

[0042] The second phosphor layer 180 is excited by the second light L2 emitted by the second light emitter 130 and emits a fourth light L4. The peak emission wavelength of the fourth light L4 is different from the peak emission wavelength of the third light L3 emitted by the first phosphor layer 170. Here, "the second phosphor layer 180 is excited by the second light L2 emitted by the second light emitter 130" does not necessarily mean that the second phosphor layer 180 is excited only by the second light L2 emitted by the second light emitter 130. In other words, the second phosphor layer 180 may also be excited by the first light L1 emitted by the first light emitter 120. However, when the second phosphor layer 180 is also excited by the first light L1, it is preferable that the excitation intensity of the second phosphor layer 180 at the peak emission wavelength of the first light L1 is lower than the excitation intensity at the peak emission wavelength of the second light L2.

[0043] The second phosphor layer 180 includes a second phosphor having a lower excitation intensity at the emission peak wavelength of the first light L1 than at the emission peak wavelength of the second light L2. The emission peak wavelength of the second phosphor is, for example, shorter than the emission peak wavelengths of the first, third, and fourth phosphors included in the first phosphor layer 170. This allows the wavelength range of the fourth light L4 emitted from the second phosphor layer 180 to be broadened to shorter wavelengths in visible light. In other words, the color of the fourth light L4 emitted from the second phosphor layer 180 can be made bluer. As a result, by combining the wavelength range of the third light L3 emitted from the first phosphor layer 170 and the wavelength range of the fourth light L4 emitted from the second phosphor layer 180, the range of color temperature and chromaticity of the light emitted from the light source 100 can be broadened.

[0044] The second phosphor layer 180 may further include a phosphor different from the second phosphor. For example, the second phosphor layer 180 may further include another phosphor having an emission peak wavelength different from the emission peak wavelength of the second phosphor. When the second phosphor layer 180 includes multiple phosphors, such as the second phosphor and another phosphor, the fourth light L4 emitted from the second phosphor layer 180 corresponds to, for example, a mixed light of the light emitted by the second phosphor and the light emitted by the other phosphor included in the second phosphor layer 180.

[0045] The thickness of the second phosphor layer 180 and the phosphor content can be adjusted appropriately depending on the desired color temperature, chromaticity, etc. of the fourth light L4. An example of the thickness of the second phosphor layer 180 is 30 μm or more and 300 μm or less. However, the thickness of the second phosphor layer 180 is not limited to this.

[0046] In the wavelength conversion member 160, the first phosphor layer 170 is preferably disposed closer to the light emitting element 110 than the second phosphor layer 180. This reduces the possibility that the fourth light L4 emitted from the second phosphor layer 180 is also excited by the first phosphor layer 170, and that the fourth light L4 cannot be extracted to the outside of the wavelength conversion member 160.

[0047] Examples of the phosphor contained in the first phosphor layer 170 and the second phosphor layer 180 include yttrium-aluminum-garnet phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSiO 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 oxynitride phosphors such as (La,Y)3Si6N 11:Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc., nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1.), or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2). Depending on the desired color temperature, chromaticity, etc. of the third light L3 emitted from the first phosphor layer 170 and the fourth light L4 emitted from the second phosphor layer 180, the phosphors included in the first phosphor layer 170 and the second phosphor layer 180 can be appropriately selected. For example, a YAG-based phosphor may be used as the first phosphor, a CCA-based phosphor may be used as the second phosphor, a SCASN-based phosphor may be used as the third phosphor, and a KSF-based phosphor may be used as the fourth phosphor.

[0048] The wavelength conversion member 160 emits from its upper surface a third light L3 emitted from the first phosphor layer 170, a fourth light L4 emitted from the second phosphor layer 180, the first light L1 emitted by the first light-emitting unit 120 that has not been excited by the first phosphor layer 170 and the second phosphor layer 180, and the second light L2 emitted by the second light-emitting unit 130 that has not been excited by the first phosphor layer 170 and the second phosphor layer 180. That is, a mixture of these lights is emitted from the light source 100 to the lens 200. At this time, a control circuit included in the light-emitting module 10, for example, can individually control the emission intensity of the first light L1 emitted by the first light-emitting unit 120 and the emission intensity of the second light L2 emitted by the second light-emitting unit 130, thereby adjusting the color of the mixed light emitted by the light source 100. The mixed-color light emitted by light source 100 is, for example, white light having a color temperature of 2000 K or more and 8000 K or less as specified in JIS 28725. However, the color temperature of the mixed-color light emitted by light source 100 is not limited to this.

[0049] The wavelength conversion member 160 may further include another phosphor layer different from the first phosphor layer 170 and the second phosphor layer 180. For example, if the other phosphor layer includes a phosphor that is excited by at least one of the third light L3 emitted from the first phosphor layer 170 and the fourth light L4 emitted from the second phosphor layer 180, the range of color temperature or chromaticity of the mixed color light emitted from the upper surface of the wavelength conversion member 160 can be further widened.

[0050] According to the first embodiment, the light emitting element 110 including the first light emitting section 120 and the second light emitting section 130, and the wavelength converting member 160 including the first phosphor layer 170 and the second phosphor layer 180 are arranged along the first direction Z. That is, the first light emitting section 120, the second light emitting section 130, the first phosphor layer 170, and the second phosphor layer 180 are arranged in positions where they overlap each other in a top view. This allows the light source 100 capable of adjusting the color of mixed light to be miniaturized. Furthermore, the optical axis of the third light L3 emitted from the first phosphor layer 170 and the optical axis of the fourth light L4 emitted from the second phosphor layer 180 roughly overlap each other in a top view, thereby reducing color unevenness in the mixed color light emitted from the light source 100.

[0051] (Light blocking member 190) Next, an example of the configuration of the light-shielding member 190 will be described. As shown in FIG. 2, the light-shielding member 190 covers the side surfaces of the first light-emitting section 120, the second light-emitting section 130, the element substrate 140, the first phosphor layer 170, and the second phosphor layer 180. The light-shielding member 190 preferably has high light-shielding properties. Here, "light-shielding properties" refers to the property of not transmitting light. Examples of the property of not transmitting light include the property of blocking light, the property of absorbing light, and the property of reflecting light. The light-shielding member 190 preferably has light-reflecting properties. For example, the light-shielding member 190 preferably has a reflectance of 60% or more with respect to light emitted from the light source 100, and more preferably has a reflectance of 70% or more, 80% or more, or 90% or more.

[0052] The light blocking member 190 includes, for example, light-reflective particles and an insulating base material. The light-reflective particles are particles that are light-reflective to the first light L1, the second light L2, the third light L3, and the fourth light L4. The light-reflective particles are made of, for example, titanium oxide, zirconium oxide, boron nitride, or aluminum oxide. The light-reflective particles may contain at least one of these materials. The insulating base material may be composed of an organic material, an inorganic material, or both an organic material and an inorganic material. An example of the organic material is a resin such as a silicone resin. An example of the inorganic material is an alkali metal silicate.

[0053] The light blocking member 190 reflects upward the first light L1, the second light L2, the third light L3, and the fourth light L4 that reach the light blocking member 190. By including the light source 100 in the light blocking member 190, the light extraction efficiency of the light extracted from the upper surface of the wavelength conversion member 160 can be improved.

[0054] <Example> Next, an optical simulation performed using an optical model of the light source 100 will be described. The light source 100 will be described in more detail using the simulation results of the four optical models of Examples 1 to 4. However, the scope of the present disclosure is not limited to Examples 1 to 4.

[0055] The wavelength conversion member 160 included in each of Examples 1 to 4 has the following configuration: However, the types of the first phosphor, second phosphor, third phosphor, and fourth phosphor are not limited to those listed below. (1) Example 1: The first phosphor layer 170 includes an yttrium aluminum garnet phosphor (hereinafter referred to as a "YAG phosphor") as the first phosphor. The phosphor contained in the second phosphor layer 180 includes a CCA-based phosphor as the second phosphor. (2) Example 2: The first phosphor layer 170 contains a YAG phosphor as the first phosphor and a SCASN phosphor as the third phosphor. In the first phosphor layer 170, the volume ratio of the YAG phosphor to the SCASN phosphor is 22:3. The second phosphor layer 180 includes a CCA-based phosphor as the second phosphor. (3) Example 3: The first phosphor layer 170 includes a YAG phosphor as a first phosphor, a SCASN phosphor as a third phosphor, and a KSF phosphor as a fourth phosphor. In the first phosphor layer 170, the volume ratio of the YAG phosphor to the SCASN phosphor to the KSF phosphor is 20:2:10. The second phosphor layer 180 includes a CCA-based phosphor as the second phosphor. (4) Example 4: The first phosphor layer 170 contains a YAG phosphor as the first phosphor and a KSF phosphor as the fourth phosphor. In the first phosphor layer 170, the volume ratio of the YAG phosphor to the KSF phosphor is 10:90. The second phosphor layer 180 includes a CCA-based phosphor as the second phosphor.

[0056] For Examples 1 to 4, the emission spectrum when only the first light-emitting unit 120 is caused to emit light and the emission spectrum when only the second light-emitting unit 130 is caused to emit light were obtained by simulation. In this case, the emission peak wavelength of the first light L1 emitted by the first light-emitting unit 120 was set to 450 nm. The emission peak wavelength of the second light L2 emitted by the second light-emitting unit 130 was set to 380 nm.

[0057] As a premise, the excitation characteristics and emission characteristics of each of the YAG-based phosphors, SCASN-based phosphors, KSF-based phosphors, and CCA-based phosphors will be described with reference to Figures 3A and 3B. Figure 3A shows the excitation spectra of each of the YAG-based phosphors, SCASN-based phosphors, KSF-based phosphors, and CCA-based phosphors. The horizontal axis of Figure 3A shows the wavelength of the excitation light that excites each phosphor. The vertical axis of Figure 3A shows the excitation intensity (relative excitation intensity) of each phosphor depending on the wavelength of the excitation light. The excitation intensity of each phosphor shown on the vertical axis of Figure 3A is normalized by the peak value of the excitation intensity for each phosphor.

[0058] Figure 3B shows the emission spectra of a YAG-based phosphor, a SCASN-based phosphor, a KSF-based phosphor, and a CCA-based phosphor. The horizontal axis of Figure 3B shows the emission wavelength emitted by each phosphor. The vertical axis of Figure 3B shows the emission intensity (relative emission intensity) of each phosphor according to the emission wavelength. The emission intensity of each phosphor shown on the vertical axis of Figure 3B is normalized by the peak value of the emission intensity of each phosphor.

[0059] First, with reference to FIG. 3A , examples of the excitation characteristics of a YAG-based phosphor, a SCASN-based phosphor, a KSF-based phosphor, and a CCA-based phosphor will be described. As shown in FIG. 3A , in the YAG-based phosphor indicated by line K31A, the excitation intensity at 380 nm, which is the peak emission wavelength of the second light L2, is lower than the excitation intensity at 450 nm, which is the peak emission wavelength of the first light L1. Similarly to the YAG-based phosphor, in the SCASN-based phosphor indicated by line K32A and the KSF-based phosphor indicated by line K33A, the excitation intensity at 380 nm, which is the peak emission wavelength of the second light L2, is lower than the excitation intensity at 450 nm, which is the peak emission wavelength of the first light L1. Furthermore, the excitation intensity of the second light L2 in the SCASN-based phosphor is higher than the excitation intensity of the second light L2 in the YAG-based phosphor. In contrast, in the CCA phosphor indicated by the line K34A, the excitation intensity at the emission peak wavelength of the first light L1 is lower than the excitation intensity at the emission peak wavelength of the second light L2.

[0060] Next, with reference to FIG. 3B , examples of the emission characteristics of a YAG-based phosphor, a SCASN-based phosphor, a KSF-based phosphor, and a CCA-based phosphor will be described. As shown in FIG. 3B , light from a YAG-based phosphor, indicated by line K31B, includes light in a wide wavelength range from approximately 460 nm to approximately 750 nm. Light from a SCASN-based phosphor, indicated by line K32B, includes light in a wide wavelength range from approximately 550 nm to approximately 800 nm. Light from a KSF-based phosphor, indicated by line K33B, includes light in a long-wavelength wavelength range from approximately 600 nm to approximately 650 nm. Light from a CCA-based phosphor, indicated by line K34B, includes light in a wavelength range from approximately 450 nm to approximately 550 nm. Furthermore, as shown in FIG. 3B , the emission peak wavelength of light from the CCA-based phosphor is shorter than the emission peak wavelengths of light from the YAG-based phosphor and the SCASN-based phosphor.

[0061] Next, the simulation results for Examples 1 to 4 will be described with reference to Figures 4A to 7B. Figures 4A, 5A, 6A, and 7A each show the simulation results when only the first light-emitting unit 120 is made to emit light. Figures 4B, 5B, 6B, and 7B each show the simulation results when only the second light-emitting unit 130 is made to emit light.

[0062] In Example 1, the color temperature of the light emitted from the light source 100 when only the first light-emitting section 120 was caused to emit light was 4400 K, and the color temperature of the light emitted from the light source 100 when only the second light-emitting section 130 was caused to emit light was 8000 K. This shows that when the first phosphor layer 170 contains a YAG-based phosphor as the first phosphor and the second phosphor layer 180 contains a CCA-based phosphor as the second phosphor, it is possible to adjust the color temperature of the white light obtained by mixing the third light L3 and the fourth light L4 over a wide range from at least 4400 K to 8000 K.

[0063] In Example 2, the color temperature of the light emitted from the light source 100 when only the first light-emitting unit 120 was emitting light was 4512 K, and the color temperature of the light emitted from the light source 100 when only the second light-emitting unit 130 was emitting light was 7127 K. This shows that when the first phosphor layer 170 contains a YAG-based phosphor as the first phosphor and a SCASN-based phosphor as the third phosphor, and the second phosphor layer 180 contains a CCA-based phosphor as the second phosphor, it is possible to adjust the color temperature of the white light obtained by mixing the third light L3 and the fourth light L4 over a wide range from at least 4512 K to 7127 K. Furthermore, as shown in FIGS. 5A and 5B , by the first phosphor layer 170 containing a SCASN-based phosphor as the third phosphor, the emission intensity in the wavelength region longer than 640 nm, for example, could be increased compared to Example 1. In other words, it was shown that the mixed color light emitted from light source 100 contains light in a wavelength region on the longer wavelength side, thereby improving the color rendering of the light emitted from light source 100. Accordingly, it was shown that the wavelength region of the mixed color light emitted from light source 100 and reflected by an object can also be expanded to the longer wavelength side.

[0064] In Example 3, the color temperature of the light emitted from the light source 100 when only the first light-emitting unit 120 was caused to emit light was 4460 K, and the color temperature of the light emitted from the light source 100 when only the second light-emitting unit 130 was caused to emit light was 7539 K. This shows that when the first phosphor layer 170 contains a KSF phosphor in addition to a YAG phosphor and an SCASN phosphor, it is possible to adjust the color temperature of the white light obtained by mixing the third light L3 and the fourth light L4 over a wide range, at least from 4460 K to 7539 K. Furthermore, by including in the first phosphor layer 170 a KSF phosphor whose excitation intensity at the emission peak wavelength of the second light L2 is lower than that of the SCASN phosphor, as shown in FIG. 6B , the color temperature of the light emitted from the light source 100 when only the second light-emitting unit 130 was caused to emit light could be made higher than in Example 2. As a result, in the third embodiment, the range of color temperatures of the white light obtained by mixing the third light L3 and the fourth light L4 can be wider than that in the second embodiment.

[0065] In Example 4, the color temperature of the light emitted from the light source 100 when only the first light-emitting unit 120 was emitting light was 4684 K, and the color temperature of the light emitted from the light source 100 when only the second light-emitting unit 130 was emitting light was 2634 K. In Example 4, the first phosphor layer 170 contained a YAG-based phosphor and a KSF-based phosphor, but did not contain a SCASN-based phosphor, so that the color temperature of the light emitted from the light source 100 when only the second light-emitting unit 130 was emitting light could be set within the color temperature range of incandescent light (2600 K to 3250 K) specified in JIS Z9112. That is, Example 4 demonstrated that the color temperature of white light obtained by mixing the third light L3 and the fourth light L4 could be adjusted over a wide range of at least 2634 K to 4684 K.

[0066] [Second embodiment] Next, a light emitting module 10A according to a second embodiment will be described with reference to FIGS. 8 and 9. FIG. 8 is a top view schematically showing the upper surface of the light emitting module 10A according to the second embodiment. FIG. 9 is a schematic cross-sectional view of the light emitting module 10A according to the second embodiment, taken along line IX-IX shown in FIG. 8. In the second embodiment, components similar to those in the first embodiment are denoted by the same reference numerals, and descriptions thereof will be omitted where appropriate. For ease of explanation, FIGS. 8 and 9 show the light source 100 and second light source 400 provided in the light emitting module 10A, but omit the lens 200.

[0067] The light emitting module 10A according to the second embodiment includes a light source 100, a second light source 400, and a lens 200. The lens 200 may have the same configuration as the lens 200 described with reference to FIG. 2 etc. The lens portion 210 of the lens 200 is disposed above the light source 100 and the second light source 400. The light emitting module 10A may further include a substrate 300 that supports the light source 100, the second light source 400, and the lens 200.

[0068] Like the light emitting module 10 according to the first embodiment, the light emitting module 10A may be provided in a mobile terminal 1 that includes an image sensor 3. That is, the light emitting module 10A may be used as a light emitting module for a flash that emits light to illuminate a subject.

[0069] The light source 100 is similar to the light source 100 included in the light-emitting module 10 according to the first embodiment described with reference to FIGS. 1 to 7. That is, the light source 100 includes a light-emitting element 110 and a wavelength conversion member 160. To distinguish it from the second light source 400, the light source 100 will be referred to as the "first light source 100." Furthermore, the light-emitting element 110 and the wavelength conversion member 160 will be referred to as the "first light-emitting element 110" and the "first wavelength conversion member 160" respectively.

[0070] 8 and 9, the light emitting module 10A includes, for example, a plurality of second light sources 400. As shown in Fig. 9, the plurality of second light sources 400 are arranged around the first light source 100 in a top view. That is, the plurality of second light sources 400 are arranged to surround the first light source 100 in a top view.

[0071] 8, eight second light sources 400 are arranged around one first light source 100. The area of ​​each second light source 400 as viewed from above is approximately the same as the area of ​​the first light source 100 as viewed from above. However, the number, positions, and areas as viewed from above of the first light sources 100 and the number, positions, and areas as viewed from above of the second light sources 400 are not limited to the example shown in FIG. 8 and can be changed as appropriate.

[0072] 9, the second light source 400 includes a second light emitting element 410 and a second wavelength conversion member 460. The second light source 400 may further include other components such as a light blocking member 490 that covers the side surfaces of the second light emitting element 410 and the second wavelength conversion member 460, and a light-transmitting member that covers the upper surface of the second wavelength conversion member 460. For ease of explanation, the light-transmitting member that covers the upper surface of the second wavelength conversion member 460 is not shown in the figure.

[0073] The second light emitting element 410 has a light emitting section 420. The light emitting section 420 may be a light emitting section corresponding to the first light emitting section 120 or the second light emitting section 130 of the first light emitting element 110 of the first light source 100.

[0074] As shown in FIG. 9, the light emitting section 420 is a semiconductor structure including a first semiconductor layer 421, a light emitting layer 422, and a second semiconductor layer 423. As shown in FIG. 9, the first semiconductor layer 421, the light emitting layer 422, and the second semiconductor layer 423 are stacked in this order in the first direction Z. The first semiconductor layer 421 and the second semiconductor layer 423 have different conductivity types. In the example shown in FIG. 9, the first semiconductor layer 421 is made of a p-type semiconductor, and the second semiconductor layer 423 is made of an n-type semiconductor. However, the opposite may also be true, where the first semiconductor layer 421 is made of an n-type semiconductor and the second semiconductor layer 423 is made of a p-type semiconductor. The light emitting layer 422 may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers.

[0075] The first semiconductor layer 421, the light emitting layer 422, and the second semiconductor layer 423 are each made of In, similar to the first light emitting section 120 or the second light emitting section 130. x Al y Ga 1-x-y The light emitting layer 422 may be made of a nitride semiconductor including semiconductors of all compositions obtained by varying the composition ratios x and y within the respective ranges in a chemical formula of N (0≦x, 0≦y, x+y≦1). The peak emission wavelength of light emitted by the light emitting layer 422 may be, for example, blue light of 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and even more preferably 440 nm or more and 460 nm or less, similar to the light emitting layer 122 of the first light emitting unit 120. However, the peak emission wavelength of the light emitted by the light emitting layer 422 is not limited to these. Furthermore, the semiconductors constituting each of the first semiconductor layer 421, the light emitting layer 422, and the second semiconductor layer 423 are not limited to nitride semiconductors.

[0076] The second light-emitting element 410 may further include another light-emitting unit that emits light having a peak emission wavelength different from the peak emission wavelength of the light emitted by the light-emitting unit 420. The another light-emitting unit may be a light-emitting unit that corresponds to the first light-emitting unit 120 or the second light-emitting unit 130 of the first light-emitting element 110 of the first light source 100.

[0077] The second light emitting element 410 may further include other components such as an element substrate 440, a first electrode 451, and a second electrode 452. The element substrate 440 is a light-transmitting substrate disposed between the light emitting section 420 and the second wavelength converting member 460.

[0078] The first electrode 451 is connected to the second semiconductor layer 423 of the light emitting section 420. The second electrode 452 is connected to the first semiconductor layer 421 of the light emitting section 420. The first electrode 451 functions as a cathode electrode of the light emitting section 420. The second electrode 452 functions as an anode electrode of the light emitting section 420. The first electrode 451 and the second electrode 452 may be made of the same metal material or alloy material as the electrodes of the first light emitting element 110 of the first light source 100.

[0079] Each of the first electrode 451 and the second electrode 452 is connected to the wiring of the substrate 300 directly or via a conductive bonding member. That is, each of the first electrode 451 and the second electrode 452 is connected to an external power supply circuit via the wiring of the substrate 300. This connects the light emitting unit 420 to the power supply circuit. By connecting the light emitting unit 420 to the power supply circuit, the control circuit included in the light emitting module 10A can control the light emitting operation of the light emitting unit 420. Here, the power supply circuit connected to the light emitting unit 420 may be a power supply circuit separate from the power supply circuit connected to the first light emitting element 110 of the first light source 100. The control circuit included in the light emitting module 10A can individually control the light emitting operations of the first light source 100 and the second light source 400.

[0080] The second wavelength conversion member 460 converts the wavelength of at least a portion of the light emitted by the light emitting unit 420 and emits light of a different wavelength. As shown in Fig. 9 , the second wavelength conversion member 460 includes a phosphor layer 470. The phosphor layer 470 is disposed above the second light emitting element 410 and at a position overlapping with the second light emitting element 410 in a top view. The second wavelength conversion member 460 may further include another phosphor layer in addition to the phosphor layer 470.

[0081] The phosphor layer 470 includes a light-transmitting base and a phosphor. The light-transmitting base of the phosphor layer 470 may be the same as the light-transmitting base of the first phosphor layer 170 and the second phosphor layer 180 of the first wavelength conversion member 160 of the first light source 100. Furthermore, the phosphor of the phosphor layer 470 may be the same as the phosphor of the first phosphor layer 170 and the second phosphor layer 180.

[0082] For example, if the light emitting section 420 of the second light emitting element 410 emits blue light, the phosphor layer 470 may contain a phosphor such as a YAG-based phosphor that is excited by blue light and emits yellow light. This causes white light, which is a mixture of blue light and yellow light, to be emitted from the upper surface of the second wavelength conversion member 460. However, the phosphor contained in the phosphor layer 470 is not limited to a YAG-based phosphor.

[0083] According to the second embodiment, by providing the first light source 100 and the second light source 400, the area of ​​the light-emitting region in a top view can be relatively increased. As a result, when the camera of the mobile terminal 1 including the image sensor 3 operates in a wide-angle shooting mode, light can be irradiated onto a subject over a wide angular range. Furthermore, by configuring the second light source 410 and the second wavelength conversion member 460 of the second light source 400 similarly to the configurations of the first light source 110 and the first wavelength conversion member 160 of the first light source 100, mixed color light with reduced color unevenness and toned to a desired color temperature can be emitted from the second light source 400 in addition to the first light source 100. In other words, mixed color light with reduced color unevenness and toned to a desired color temperature can be emitted over a wide angular range.

[0084] Furthermore, according to the second embodiment, the light emitting operations of the first light source 100 and the second light source 400 can be controlled individually, and by making the number of light emitting units of the first light source 100 greater than the number of light emitting units of the second light source 400, it is possible to emit light with a relatively high emission intensity from the first light source 100 that is arranged in the center when viewed from above. As a result, when the camera of the mobile terminal 1 including the image sensor 3 operates in a telephoto shooting mode, only the first light source 100 is made to emit light, thereby reducing power consumption and enabling bright light to be emitted to distant subjects.

[0085] As described above, according to the second embodiment, the light emitting module 10A can vary the light intensity distribution of light emitted depending on the camera's shooting mode. Specifically, when the camera operates in a wide-angle shooting mode, light can be emitted over a wide angular range, while when the camera operates in a telephoto shooting mode, light with high light intensity can be emitted over a narrow angular range. As a result, it is possible to brightly illuminate a subject within the camera's angle of view corresponding to each shooting mode.

[0086] Furthermore, by making the number of light-emitting units of the first light source 100 greater than the number of light-emitting units of the second light source 400, it is possible to emit light with a high luminous intensity in some areas. Therefore, the light-emitting module 10A can be suitably used as a torch light.

[0087] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0088] Aspects of the present disclosure are, for example, as follows. <Item 1> A light emitting element, each of which has a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and which has a first light emitting section that emits first light and a second light emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, wherein the first light emitting section and the second light emitting section are stacked in a first direction; a wavelength conversion member disposed on the light emitting element, the wavelength conversion member including: a first phosphor layer excited by the first light and emitting third light; and a second phosphor layer excited by the second light and emitting fourth light having an emission peak wavelength different from the emission peak wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction; A light source comprising: <Item 2> The emission peak wavelength of the second light is shorter than the emission peak wavelength of the first light, the second light-emitting unit is disposed closer to the wavelength conversion member than the first light-emitting unit; The light source according to <Item 1>. <Item 3> The first phosphor layer includes a first phosphor having an excitation intensity at an emission peak wavelength of the second light lower than an excitation intensity at an emission peak wavelength of the first light, the second phosphor layer includes a second phosphor having an excitation intensity at an emission peak wavelength of the first light lower than an excitation intensity at an emission peak wavelength of the second light; The light source according to <Item 1> or <Item 2>. <Item 4> The emission peak wavelength of the second phosphor is shorter than the emission peak wavelength of the first phosphor, the first phosphor layer is disposed closer to the light emitting element than the second phosphor layer; The light source according to <Item 3>. <Item 5> The first phosphor layer further includes a third phosphor having an emission peak wavelength different from the emission peak wavelength of the first phosphor, an excitation intensity of the third phosphor at an emission peak wavelength of the second light is higher than an excitation intensity of the first phosphor at an emission peak wavelength of the second light; The third phosphor has a peak emission wavelength longer than the peak emission wavelength of the first phosphor. The light source according to <Item 3> or <Item 4>. <Item 6> A control circuit capable of individually controlling the first light-emitting unit and the second light-emitting unit is provided. The light source according to any one of <Item 1> to <Item 5>. <Item 7> The light source is capable of emitting white light having a color temperature of 2000 K or more and 8000 K or less, which is a mixture of the third light and the fourth light. The light source according to any one of <Item 1> to <Item 6>. <Item 8> A first light source; a lens disposed over the first light source; Equipped with The first light source is a first light emitting element, each of which has a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and which has a first light emitting section that emits first light and a second light emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, and the first light emitting section and the second light emitting section are stacked in a first direction; a first wavelength conversion member disposed on the first light emitting element, the first wavelength conversion member including a first phosphor layer excited by the first light and emitting third light, and a second phosphor layer excited by the second light and emitting fourth light having an emission peak wavelength different from an emission peak wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction; A light emitting module comprising: <Item 9> When viewed from the first direction, the light source is arranged around the first light source, Further comprising a second light source including a second light emitting element having at least one of the first light emitting portion and the second light emitting portion, and a second wavelength converting member disposed on the second light emitting element. The light-emitting module according to <Item 8>. <Item 10> When viewed from the first direction, a plurality of the second light sources are arranged surrounding the first light source. The light emitting module according to <Item 8> or <Item 9>. <Item 11> An imaging element that captures an image of a subject; a light emitting module that emits light to illuminate the subject; Equipped with The light emitting module includes: A first light source; a lens disposed over the first light source; Equipped with The first light source is a first light emitting element, each of which has a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and which has a first light emitting section that emits first light and a second light emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, and the first light emitting section and the second light emitting section are stacked in a first direction; a first wavelength conversion member disposed on the first light emitting element, the first wavelength conversion member including a first phosphor layer excited by the first light and emitting third light, and a second phosphor layer excited by the second light and emitting fourth light having an emission peak wavelength different from an emission peak wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction; A mobile terminal comprising: [Explanation of symbols]

[0089] 1. Mobile devices 2. Case 3. Image sensor 10,10A light emitting module 100 light source (1st light source) 110 Light-emitting element (first light-emitting element) 120 First light-emitting part 130 Second light-emitting part 140 Element substrate 110T tunnel junction layer 151 1st electrode 152 2nd electrode 153 3rd electrode 160 wavelength conversion member (first wavelength conversion member) 170 First phosphor layer 180 Second phosphor layer 200 lenses 210 Lens section 220 Support part 300 boards 400 2nd light source 410 second light-emitting element 460 Second wavelength conversion member

Claims

1. a light emitting element, each of which has a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and which has a first light emitting section that emits first light and a second light emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, and in which the first light emitting section and the second light emitting section are stacked in a first direction; a wavelength conversion member disposed on the light emitting element, the wavelength conversion member including: a first phosphor layer excited by the first light and emitting third light; and a second phosphor layer excited by the second light and emitting fourth light having an emission peak wavelength different from the emission peak wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction; A light source comprising:

2. an emission peak wavelength of the second light is shorter than an emission peak wavelength of the first light; The second light-emitting unit is disposed closer to the wavelength conversion member than the first light-emitting unit. The light source of claim 1 .

3. the first phosphor layer includes a first phosphor having an excitation intensity at an emission peak wavelength of the second light lower than an excitation intensity at an emission peak wavelength of the first light, the second phosphor layer includes a second phosphor having an excitation intensity at an emission peak wavelength of the first light lower than an excitation intensity at an emission peak wavelength of the second light; 3. The light source according to claim 1 or claim 2.

4. the emission peak wavelength of the second phosphor is shorter than the emission peak wavelength of the first phosphor; the first phosphor layer is disposed closer to the light emitting element than the second phosphor layer; The light source of claim 3 .

5. the first phosphor layer further includes a third phosphor having an emission peak wavelength different from the emission peak wavelength of the first phosphor; an excitation intensity of the third phosphor at an emission peak wavelength of the second light is higher than an excitation intensity of the first phosphor at an emission peak wavelength of the second light; The third phosphor has a peak emission wavelength longer than the peak emission wavelength of the first phosphor. The light source of claim 3 .

6. a control circuit capable of individually controlling the first light-emitting unit and the second light-emitting unit; 3. The light source according to claim 1 or claim 2.

7. the light source is capable of emitting white light having a color temperature of 2000 K or more and 8000 K or less, which is a mixture of the third light and the fourth light.

3. The light source according to claim 1 or claim 2.

8. A first light source; a lens disposed over the first light source; Equipped with The first light source is a first light emitting element, each of which has a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and which has a first light emitting section that emits first light and a second light emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, and the first light emitting section and the second light emitting section are stacked in a first direction; a first wavelength conversion member disposed on the first light-emitting element, the first wavelength conversion member including: a first phosphor layer excited by the first light and emitting third light; and a second phosphor layer excited by the second light and emitting fourth light having an emission peak wavelength different from an emission peak wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction; A light emitting module comprising:

9. When viewed from the first direction, the light source is disposed around the first light source, Further provided is a second light source including a second light-emitting element having at least one of the first light-emitting portion and the second light-emitting portion, and a second wavelength conversion member disposed on the second light-emitting element. The light emitting module according to claim 8 .

10. When viewed from the first direction, the second light sources are arranged in plurality to surround the first light source. The light emitting module according to claim 9 .

11. an imaging element for capturing an image of a subject; a light emitting module that emits light to illuminate the subject; Equipped with The light emitting module includes: A first light source; a lens disposed over the first light source; Equipped with The first light source is a first light emitting element, each of which has a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and which has a first light emitting section that emits first light and a second light emitting section that emits second light having an emission peak wavelength different from the emission peak wavelength of the first light, and the first light emitting section and the second light emitting section are stacked in a first direction; a first wavelength conversion member disposed on the first light-emitting element, the first wavelength conversion member including: a first phosphor layer excited by the first light and emitting third light; and a second phosphor layer excited by the second light and emitting fourth light having an emission peak wavelength different from an emission peak wavelength of the third light, the first phosphor layer and the second phosphor layer being stacked in the first direction; A mobile terminal comprising:

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