Rubber member, and semiconductor manufacturing-related device

Abstract

To provide a rubber member having excellent corrosion resistance and a semiconductor manufacturing-related device using the same.SOLUTION: Provided is a rubber member that includes a halogen-based rubber containing at least one element selected from the group consisting of chlorine, bromine and iodine, where the rubber member is at least one member selected from the group consisting of building material members, mobility members, aerospace members, semiconductor members and information communication members, and where the rubber member comes into contact with a corrosive substance.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a rubber member and a semiconductor manufacturing-related device. [Background technology]

[0002] In applications such as rubber rollers, it has been proposed to use a chlorinated polyolefin composition to improve durability (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-96824 [Patent Document 2] International Publication No. 2022 / 145447 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a rubber member having excellent corrosion resistance and a semiconductor manufacturing-related device using the same. [Means for solving the problem]

[0005] The present disclosure (1) provides a rubber member containing a halogen-based rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, The rubber member is at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials, It is a rubber component that comes into contact with corrosive substances.

[0006] The present disclosure (2) is the rubber member according to the present disclosure (1), wherein the halogen-based rubber is at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber.

[0007] The present disclosure (3) is the rubber member according to the present disclosure (1) or (2), which contains at least one acid acceptor selected from the group consisting of lead compounds and epoxy compounds.

[0008] The present disclosure (4) is the rubber member according to the present disclosure (3), wherein the acid acceptor is at least one selected from the group consisting of lead oxide and epoxidized polybutadiene.

[0009] The present disclosure (5) is the rubber member according to the present disclosure (3) or (4), wherein the halogen-based rubber contains 1 to 35% by mass of the acid acceptor.

[0010] The present disclosure (6) is the rubber member according to the present disclosure (3) or (4), wherein the halogen-based rubber contains 10 to 30% by mass of the acid acceptor.

[0011] The present disclosure (7) is a rubber member in any combination with any of the present disclosures (1) to (6), in which the halogen-based rubber is crosslinked with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent.

[0012] The present disclosure (8) is a rubber member in any combination with any of the present disclosures (1) to (7), wherein the rubber member is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a packing, a gasket, a washer, and a sealing material.

[0013] The present disclosure (9) is a rubber member in any combination with any of the present disclosures (1) to (7), wherein the rubber member is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a gasket, a washer, and a sealing material.

[0014] The present disclosure (10) is a rubber member in any combination with any of the present disclosures (1) to (9), in which the corrosive substance has a pH of 6 or less or 8 or more.

[0015] The present disclosure (11) is a rubber member in any combination with any of the present disclosures (1) to (10), wherein the oxidation-reduction potential (vsNHE) of the corrosive substance is −2.0 to 3.0 V.

[0016] The present disclosure (12) is a rubber member in any combination with any of the present disclosures (1) to (11), wherein the corrosive substance is at least one selected from the group consisting of an acidic substance, a basic substance, an oxidizing substance, an organic solvent, and salt water.

[0017] The present disclosure (13) is the rubber member according to the present disclosure (12), wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

[0018] The present disclosure (14) is directed to a method for preparing a hydroxybenzoate comprising the steps of: + [OH] - ), an aqueous solution of sodium hydroxide, aqueous ammonia, and a mixed solution of aqueous hydrogen peroxide and aqueous ammonia.

[0019] The present disclosure (15) is directed to a method for treating a corrosive substance, which is selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed solution of hydrogen peroxide and hydrochloric acid, a mixed solution of hydrogen peroxide and sulfuric acid, TMAH([(CH3)4N] + [OH] - ), a sodium hydroxide aqueous solution, a mixed chemical solution of hydrogen peroxide and ammonia water, and at least one selected from the group consisting of isopropyl alcohol, and any of the rubber members of the present disclosure (1) to (14).

[0020] The present disclosure (16) is a rubber member in any combination with any of the present disclosures (1) to (15), wherein the rubber member is a member for semiconductor manufacturing related equipment.

[0021] The present disclosure (17) is the rubber member according to the present disclosure (16), wherein the semiconductor manufacturing related device is a device in which a chemical is used.

[0022] The present disclosure (18) is a rubber member in any combination with any of the present disclosures (1) to (17), in which a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in each of the following four types of chemical solutions for one week, and the relative value of the mass after immersion, with the mass before immersion being 100, is 60 or more and 140 or less in all cases. (medicinal solution) 25% by mass TMAH([(CH3)4N] + [OH] - )(80℃) 49% by mass hydrofluoric acid (70℃) Mixture of hydrofluoric acid and nitric acid (49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid and 30-36% hydrogen peroxide in a volume ratio of 2:1) (80°C)

[0023] The present disclosure (19) is a rubber member in any combination with any of the present disclosures (1) to (18), in which a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member is immersed in each of the following nine types of chemical liquids for one week, and the relative values ​​of the mass after immersion are calculated, with the mass before immersion being set to 100, and the average of the relative values ​​for the nine types of chemical liquids is 80 or more and 120 or less, and the standard deviation is 20 or less. (medicinal solution) 25% by mass TMAH([(CH3)4N] + [OH] - )(80℃) 100% isopropyl alcohol (80°C) 49% by mass hydrofluoric acid (70℃) Mixture of hydrofluoric acid and nitric acid (49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) Mixture of hydrofluoric acid and nitric acid (49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid and 30-36% hydrogen peroxide in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25-28% ammonia water, 30-36% hydrogen peroxide water, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80℃)

[0024] The present disclosure (20) is a rubber member in any combination with any of the present disclosures (1) to (19), in which when a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of each of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is 30 ppb or less.

[0025] The present disclosure (21) is a rubber member in any combination with any of the present disclosures (1) to (20), in which when a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of two elements (Ca, Pb) is 10,000 ppb or less, respectively.

[0026] The present disclosure (22) is a rubber member in any combination with any of the present disclosures (1) to (21), in which when a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of each of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less.

[0027] The present disclosure (23) is a semiconductor manufacturing-related device equipped with a rubber member in any combination with any of the present disclosures (1) to (22).

[0028] The present disclosure (24) is a semiconductor manufacturing related device of the present disclosure (23), which is at least one selected from the group consisting of semiconductor manufacturing devices and devices related to semiconductor manufacturing devices.

[0029] The present disclosure (25) is directed to the semiconductor manufacturing apparatus, wherein the semiconductor manufacturing apparatus is at least one selected from the group consisting of a photolithography process apparatus, a thin film formation / etching / cleaning / drying apparatus, an inspection / evaluation apparatus / manufacturing apparatus, a resist processing apparatus, an etching apparatus, a cleaning / drying apparatus, a CVD apparatus, a thin film formation apparatus, a CMP apparatus, a processing apparatus, an aging apparatus, and an inspection apparatus; The semiconductor manufacturing-related device of the present disclosure (24) is at least one selected from the group consisting of a pure water / chemical liquid device, a gas device, a clean room device, and manufacturing-related devices.

[0030] The present disclosure (26) is directed to the photolithography process apparatus, wherein the photolithography process apparatus is at least one selected from the group consisting of a coating apparatus, a resist stripping apparatus, a developing apparatus (developer), and a descum apparatus; the thin film formation / etching / cleaning / drying device is at least one selected from the group consisting of a vacuum deposition device, a cleaning device, a drying device, and a scrub cleaning device; The inspection and evaluation device and manufacturing device are defect repair devices, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, and an ashing device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, the cleaning / drying device is at least one selected from the group consisting of a wet cleaning device, a scrub cleaning device, and a drying device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, an SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus, the processing device is a bump plating device, the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC extraction device; the inspection device is a life test device, the pure water / chemical device is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; the clean room device is at least one selected from the group consisting of a thermal chamber and an environmental testing device; The manufacturing-related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a measuring device for liquids and gases, which is a semiconductor manufacturing-related equipment of the present disclosure (25). [Effects of the Invention]

[0031] According to the present disclosure, it is possible to provide a rubber member having excellent corrosion resistance and a semiconductor manufacturing-related device using the same. DETAILED DESCRIPTION OF THE INVENTION

[0032] The present disclosure will be specifically described below.

[0033] The present disclosure relates to a rubber member that includes a halogen-based rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, the rubber member being at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communications materials, and that comes into contact with corrosive substances. The rubber member of the present disclosure has excellent corrosion resistance (particularly chemical resistance).

[0034] The rubber member of the present disclosure can also suppress metal elution.

[0035] The rubber member of the present disclosure includes a halogen-based rubber containing at least one element selected from the group consisting of chlorine, bromine, and iodine. The halogen-based rubber preferably contains at least one selected from the group consisting of chlorine and bromine, and more preferably contains chlorine. The halogen-based rubber preferably does not contain fluorine.

[0036] Examples of the halogen-based rubber include chlorosulfonated olefin rubbers such as chlorosulfonated ethylene rubber (CSM); chlorinated polyolefin rubbers such as chlorinated polyethylene rubber (CM); halogenated butyl rubbers such as chlorinated butyl rubber (CIIR) and brominated butyl rubber (BIIR); epichlorohydrin rubber (ECO) and chloroprene rubber (CR); and the like, and one or more of these may be used. As the halogen-based rubber, at least one selected from the group consisting of chlorosulfonated olefin rubber and chlorinated polyolefin rubber is preferred, and chlorosulfonated olefin rubber is more preferred, in terms of further improving corrosion resistance and further suppressing metal elution. From the same viewpoint, at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber is preferred, and chlorosulfonated ethylene rubber is more preferred.

[0037] The halogen-based rubber has a high Mooney viscosity (ML 1+4 (100°C)) is preferably 10 or more, more preferably 20 or more, even more preferably 30 or more, and even more preferably 40 or more, and is preferably 200 or less, and more preferably 170 or less. The Mooney viscosity is measured in accordance with ASTM D 1646.

[0038] The halogen-based rubber has a high Mooney viscosity (ML 1+4(121°C)) is preferably 10 or more, more preferably 20 or more, even more preferably 30 or more, and even more preferably 40 or more, and is preferably 200 or less, and more preferably 170 or less. The Mooney viscosity is measured in accordance with ASTM D 1646.

[0039] The chlorosulfonated olefin rubber is a polymer having a structure in which a chlorosulfone group (-SO2Cl) and chlorine are bonded to a polyolefin main chain. The chlorosulfonated olefin rubber can be obtained by chlorosulfonating and chlorinating a polyolefin.

[0040] The polyolefin is a polymer having monomer units derived from an olefin, and examples of the olefin include ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, 1-octene, and 1-decene.

[0041] The polyolefin is preferably a polyolefin having at least ethylene and / or propylene as a monomer unit. For example, a homopolymer of ethylene or propylene or a copolymer of ethylene and / or propylene is preferred, and more preferably, for example, polyethylene, polypropylene, ethylene-α-olefin copolymer, ethylene-vinyl compound copolymer, etc. Examples of the α-olefin include propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene, 1-octene, 1-decene, etc. Examples of the vinyl compound include vinyl acetate, vinyl alcohol, acrylic acid, methyl methacrylate, vinyl chloride, acrylonitrile, styrene, vinylcyclohexane, N-isopropylacrylamide, acrolein, vinylene carbonate, maleic anhydride, etc.

[0042] The polyolefin may be copolymerized with other polymerizable components, such as linear dienes such as 1,3-butadiene, isoprene, 1,4-hexadiene, 1,6-octadiene, 2-methyl-1,5-hexadiene, 6-methyl-1,5-heptadiene, and 7-methyl-1,6-octadiene; and cyclic dienes such as 1,3-cyclohexadiene, 1,4-cyclohexadiene, dicyclopentadiene, 5-vinyl-2-norbornene, 5-ethylidene-2-norbornene, 5-methylene-2-norbornene, and 5-isopropylidene-2-norbornene.

[0043] The polyolefin is preferably polyethylene, and the chlorosulfonated olefin rubber is preferably chlorosulfonated ethylene rubber (chlorosulfonated polyethylene).

[0044] Chlorosulfonated olefin rubber can be produced by reacting the above polyolefin with chlorine and sulfurous acid gas, or by reacting the above polyolefin with sulfuryl chloride in the presence of an amine.

[0045] The chlorine content in the chlorosulfonated olefin rubber is not particularly limited, but from the viewpoint of further improving corrosion resistance and rubber elasticity, it is preferably 5 to 60 mass%, more preferably 10 to 50 mass%, and particularly preferably 20 to 45 mass%. Furthermore, the sulfur content in the chlorosulfonated olefin rubber is not particularly limited, but it is preferably 0.1 to 5 mass%, more preferably 0.4 to 3 mass% or more, and particularly preferably 0.6 to 2 mass%. The chlorine content and sulfur content can be calculated by elemental analysis.

[0046] The chlorinated polyolefin rubber is obtained by chlorinating a polyolefin. Examples of polyolefins include homopolymers of α-olefins having 2 to 10 carbon atoms, such as polyethylene and polypropylene, and copolymers of two or more α-olefins, such as block copolymerized polypropylene and random copolymerized polypropylene. Among these, non-sulfonated polyolefins are more preferred, and polyethylene is particularly preferred. That is, as the chlorinated polyolefin rubber, chlorinated polyethylene rubber is particularly preferred. It is preferable that the hydrogen atoms of the chlorinated polyolefin rubber are not substituted with atoms other than halogen atoms.

[0047] The chlorination of polyolefin can be carried out, for example, by introducing chlorine gas into an aqueous suspension of polyolefin.

[0048] In terms of further improving corrosion resistance and further suppressing metal elution, the chlorine content of the chlorinated polyolefin rubber is preferably 25% by mass or more, more preferably 30% by mass or more, even more preferably 35% by mass or more, and even more preferably 38% by mass or more, and is preferably 50% by mass or less, more preferably 45% by mass or less, and even more preferably 43% by mass or less. The chlorine content is measured by heating and burning a sample in a glass tube with the flame of a gas burner, decomposing the sample to remove hydrochloric acid, absorbing the generated hydrochloric acid gas into distilled water, and neutralizing titrating it with a 0.1 mol / L normal solution of sodium hydroxide.

[0049] The chlorinated polyolefin rubber has a high Mooney viscosity (ML 1+4 (121°C)) is preferably 30 or more, more preferably 50 or more, and even more preferably 55 or more, and is preferably 140 or less, more preferably 130 or less, and even more preferably 120 or less. The Mooney viscosity is measured in accordance with ASTM D 1646.

[0050] The weight average molecular weight Mw of the chlorinated polyolefin rubber is preferably 100,000 or more, more preferably 150,000 or more, and is preferably 300,000 or less, more preferably 250,000 or less. When Mw is within this range, the Mooney viscosity can be adjusted to the above range, making it easier to obtain desired properties. The weight average molecular weight is an average molecular weight calculated in terms of polystyrene by gel permeation chromatography (GPC, eluent: tetrahydrofuran, temperature: 38°C).

[0051] The chlorinated polyolefin rubber is preferably amorphous. In this specification, amorphous means that the heat of crystalline fusion measured by using a differential scanning calorimeter to raise the temperature of a measurement sample from 30°C at a rate of 10°C per minute is 2.0 J / g or less.

[0052] The halogen-containing rubber is usually crosslinked. Although the crosslinking method is not limited, crosslinking with a peroxide crosslinking agent and / or a sulfur-based crosslinking agent is preferred, and crosslinking with a peroxide crosslinking agent is more preferred, in terms of further improving corrosion resistance and further suppressing metal elution.

[0053] The peroxide crosslinking agent may be any known peroxide, and is preferably an organic peroxide. Examples of the organic peroxide include diacyl peroxides such as benzoyl peroxide, dibenzoyl peroxide, p-chlorobenzoyl peroxide, stearoyl peroxide, lauroyl peroxide, and 4-methylbenzoyl peroxide; 1-butyl peroxyacetate, t-butyl peroxybenzoate, t-butyl peroxyphthalate, t-butyl peroxymaleic acid, t-butyl peroxylaurate, t-hexyl peroxybenzoate, 2,5 -dimethyl-2,5-di(benzoylperoxy)hexane, di-t-butylperoxyisophthalate and other peroxy esters; methyl ethyl ketone peroxide, 1,1-bis(t-butylperoxy)2-methylcyclohexane, 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-hexylperoxy)cyclohexane, 1,1-bis(t-butylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(t-butylperoxy) peroxyketals such as di-t-butylperoxybenzoate, 1,3-bis(1-butylperoxyisopropyl)benzene, dicumyl peroxide, t-butylcumyl peroxide, 2,5-dimethyl-2,5-di(t-butylperoxy)hexane (trade name: Perhexa (registered trademark) 25B), α,α'-bis(t-butylperoxy)diisopropylbenzene (trade name: Perbutyl (registered trademark) Examples of suitable peroxycarbonates include dialkyl peroxides such as 2,5-dimethyl-2,5-di(t-butylperoxyl)hexyne-3 (trade name: Perhexyne (registered trademark) 25B-40), and 2,5-dimethyl-2,5-di(t-butylperoxyl)hexyne-3 (trade name: Perhexyne (registered trademark) 25B-40); hydroperoxides such as t-butyl hydroperoxide; and monoperoxycarbonates such as t-hexylperoxyisopropyl monocarbonate, t-butylperoxyisopropyl monocarbonate, and t-butylperoxy-2-ethylhexyl monocarbonate.

[0054] Among these, organic peroxides with a one-minute half-life temperature of 130°C or higher are preferred. The one-minute half-life temperature of an organic peroxide is the temperature at which the organic peroxide decomposes and reduces to half of its initial amount of active oxygen in one minute. The measurement method is not particularly limited, but it can be determined, for example, by determining the half-life of an organic peroxide at a peroxide concentration of 0.10 mol / L at multiple temperatures in a solvent relatively inert to radicals (such as benzene) and plotting the data.

[0055] As the sulfur-based crosslinking agent, known agents can be used, such as elemental sulfur and sulfur compounds.

[0056] The amount of the crosslinking agent used is preferably 0% by mass or more, more preferably 0.5% by mass or more, and even more preferably 3.0% by mass or more, relative to the uncrosslinked halogen-based rubber, and is preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less.

[0057] The rubber member of the present disclosure preferably further contains an acid acceptor, which may be a known acid acceptor such as a lead compound such as lead oxide or red lead, a magnesium compound such as magnesium oxide, an epoxy compound such as epoxidized polybutadiene, an aliphatic glycidyl ether, an epoxidized oil or an epichlorohydrin derivative, or hydrotalcite. Among these, at least one selected from the group consisting of lead compounds and epoxy compounds is preferred in that it further improves corrosion resistance, and epoxy compounds are more preferred in that it further suppresses metal elution. From the same viewpoint, at least one selected from the group consisting of lead oxide and epoxidized polybutadiene is preferred, and epoxidized polybutadiene is more preferred.

[0058] The epoxidized polybutadiene is not particularly limited, but examples thereof include epoxy-modified polybutadiene, etc. In particular, compounds in which epoxy groups have been introduced by oxidation of vinyl groups are preferred. Commercially available products include NISSO-PB (registered trademark) JP-100 and JP-200 (both manufactured by Nippon Soda Co., Ltd.), Epolead (registered trademark) PB3600 and 4700 (both manufactured by Daicel Corporation), Adeka Cizer (registered trademark) BF-1000 (manufactured by ADEKA Corporation), and Ricon (registered trademark) 657 (manufactured by Cray Valley Industries, Inc.), which can be used alone or in combination of two or more. Triazine-crosslinked epoxidized polybutadiene can also be used.

[0059] The number average molecular weight of the epoxidized polybutadiene is preferably 500 or more, more preferably 1000 or more, even more preferably 1100 or more, even more preferably 1200 or more, and particularly preferably 2000 or more, and is preferably 50000 or less, more preferably 10000 or less, even more preferably 8000 or less, even more preferably 6000 or less, and particularly preferably 5000 or less. The number average molecular weight of the epoxidized polybutadiene is measured in terms of polystyrene by gel permeation chromatography (GPC, eluent: tetrahydrofuran, temperature: 40°C).

[0060] The epoxy equivalent of the epoxidized polybutadiene is preferably 50 or more, more preferably 100 or more, and even more preferably 140 or more, and is preferably 400 or less, and more preferably 300 or less. The epoxy equivalent of the epoxidized polybutadiene is measured in accordance with JIS K7236 (2001).

[0061] The content of the acid acceptor is preferably 1% by mass or more, more preferably 3% by mass or more, even more preferably 5% by mass or more, and even more preferably 10% by mass or more, relative to the halogen-based rubber, and is preferably 50% by mass or less, more preferably 35% by mass or less, and even more preferably 30% by mass or less.

[0062] The rubber member of the present disclosure may further contain a processing aid. Examples of the processing aid include fatty acid esters, fatty acid zinc salts, and pentaerythritol. Among these, fatty acid esters are preferred in terms of further suppressing metal elution and non-reactivity with epoxy compounds.

[0063] The content of the processing aid relative to the halogen-based rubber may be 0% by mass, is preferably 1% by mass or more, more preferably 2% by mass or more, and even more preferably 3% by mass or more, and is preferably 10% by mass or less, more preferably 7% by mass or less, and even more preferably 5% by mass or less.

[0064] The rubber member of the present disclosure may further contain a crosslinking aid. Examples of the crosslinking aid include a thiazole-based vulcanization accelerator, a thiuram-based vulcanization accelerator, a guanidine-based vulcanization accelerator, triallyl isocyanurate, and dithiocarbamate. Among them, from the viewpoint of corrosion resistance, at least one selected from the group consisting of a thiazole-based vulcanization accelerator, a thiuram-based vulcanization accelerator, a guanidine-based vulcanization accelerator, and triallyl isocyanurate is preferred, a combination of two selected from the group consisting of a thiazole-based vulcanization accelerator, a thiuram-based vulcanization accelerator, and a guanidine-based vulcanization accelerator, and triallyl isocyanurate is more preferred, and a combination of three selected from a thiazole-based vulcanization accelerator, a thiuram-based vulcanization accelerator, and a guanidine-based vulcanization accelerator, and triallyl isocyanurate is even more preferred. When a sulfur-based crosslinking aid is used, the active sulfur generated from the crosslinking aid can also function as a crosslinking agent.

[0065] The content of the crosslinking aid relative to the halogen-based rubber is preferably 0% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1.0% by mass or more, and is preferably 10% by mass or less, and more preferably 5% by mass or less.

[0066] The rubber member of the present disclosure may further contain a reinforcing material (filler). The reinforcing material is not particularly limited, but specific examples include carbon black, silica, calcium carbonate, talc, clay, aluminum hydroxide, magnesium hydroxide, magnesia, etc., with carbon black and silica being more preferred due to their excellent abrasion resistance. These reinforcing materials may be surface-treated for purposes such as antistatic properties.

[0067] The content of the reinforcing material is preferably 100 parts by mass or less, more preferably 70 parts by mass or less, and even more preferably 50 parts by mass or less, per 100 parts by mass of the halogen-based rubber, and is preferably 0 part by mass or more, more preferably 10 parts by mass or more, and even more preferably 20 parts by mass or more.

[0068] The rubber member of the present disclosure may further contain a plasticizer. Plasticizers that are commonly used for polyvinyl chloride can be used as the plasticizer. Specific examples of the plasticizer include alkylsulfonic acid phenyl ester (trade name Mesamoll (registered trademark)); dimethyl phthalate, diethyl phthalate, dibutyl phthalate, diheptyl phthalate, di-n-octyl phthalate, 2-ethylhexyl phthalate (hereinafter sometimes abbreviated as DOP), isononyl phthalate, octyldecyl phthalate, butyl benzyl phthalate, dicyclohexyl phthalate, n-octyl tetrahydrophthalate, di-2-ethylhexyl tetrahydrophthalate, Phthalate ester plasticizers such as diisodecyl tetrahydrofuranate; aliphatic monobasic acid ester plasticizers such as butyl oleate and glycerin monooleate; dibutyl adipate, di-n-hexyl adipate, di-2-ethylhexyl adipate, diisononyl adipate, diisodecyl adipate, dialkyl adipate 610, dibutyl diglycol adipate, di-2-ethylhexyl azelaate, di-n-hexyl azelaate, dibutyl sebacate, sebacate Examples of plasticizers that can be used include aliphatic dibasic ester plasticizers such as di-2-ethylhexyl phosphate; trimellitic ester plasticizers such as trialkyl (C4-11) trimellitate, cyclohexene carboxylic acid ester, trioctyl trimellitate, and isononyl trimellitate; polyester plasticizers such as propylene glycol adipate and 1,3-butylene glycol adipate, which are composed of polymers of dibasic acids such as adipic acid, azelaic acid, sebacic acid, and phthalic acid with glycols, glycerins, and monobasic acids; phosphate ester plasticizers such as triethyl phosphate, tributyl phosphate, tri-2-ethylhexyl phosphate, triphenyl phosphate, tricresyl phosphate, trichloroethyl phosphate, tris-dichloropropyl phosphate, tributoxyethyl phosphate, tris(β-chloropropyl)phosphate, octyl diphenyl phosphate, tris(isopropylphenyl) phosphate, and cresyl diphenyl phosphate; and chlorinated paraffin plasticizers.

[0069] The content of the plasticizer is preferably 30 parts by mass or less, more preferably 20 parts by mass or less, and even more preferably 15 parts by mass or less, per 100 parts by mass of the halogen-based rubber, and is preferably 0.1 part by mass or more, more preferably 1.0 part by mass or more, and even more preferably 5.0 parts by mass or more.

[0070] The rubber member of the present disclosure may further contain other components in addition to those described above, as necessary. Examples of the other components include known additives used in rubber compositions, such as stabilizers, antioxidants, vulcanization accelerators (such as stearic acid), viscosity enhancers, flame retardants, and pigments. These can be added within a range that does not impair the effects of the present disclosure.

[0071] In one preferred embodiment, an antioxidant is used as the other component. Examples of the antioxidant include amine-based antioxidants and phenol-based antioxidants as primary antioxidants, and one or more of these can be used. Examples of the secondary antioxidant include sulfur-based antioxidants and phosphorus-based antioxidants. A combination of a primary antioxidant and a secondary antioxidant is preferred, and a combination of an amine-based antioxidant and a sulfur-based antioxidant is particularly preferred.

[0072] The content of the antioxidant is preferably 0 part by mass or more, more preferably 0.1 part by mass or more, particularly preferably 0.5 part by mass or more, and is preferably 30 parts by mass or less, particularly preferably 10 parts by mass or less, per 100 parts by mass of the halogen-based rubber. An amount exceeding 30 parts by mass is not preferred because blooming occurs.

[0073] The content of the other components other than the antioxidant is preferably 0 part by mass or more, more preferably 1.0 part by mass or more, and is preferably 150 parts by mass or less, more preferably 100 parts by mass or less, per 100 parts by mass of the halogen-based rubber.

[0074] The rubber member of the present disclosure is one that comes into contact with a corrosive substance. A part of the rubber member may come into contact with the corrosive substance, or the entire rubber member may come into contact with the corrosive substance.

[0075] The corrosive substance may be any substance that is corrosive to rubber, resin, metal, etc. The corrosive substance may be liquid, solid, or gaseous. In order to more significantly exhibit the effects of the present disclosure, the corrosive substance is preferably liquid.

[0076] The above-mentioned corrosive substance has an oxidation-reduction potential (vs NHE) of preferably −2.0 V or higher, more preferably −1.0 V or higher, even more preferably −0.5 V or higher, and preferably 3.0 V or lower, more preferably 2.5 V or lower, even more preferably 2.1 V or lower.

[0077] Examples of the corrosive substance include acidic substances, basic substances, oxidizing substances, organic solvents, and salt water.

[0078] The acidic substance may be a chemical solution having a pH of 6 or less, preferably 5 or less, and more preferably 4 or less. Specific examples include acids such as sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, and hydrochloric acid; mixtures of these acids; and mixtures of these acids with other substances (such as hydrogen peroxide). Among these, at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is preferred, and at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is more preferred.

[0079] The basic substance may be a chemical solution having a pH of 8 or higher, preferably 9 or higher, and more preferably 10 or higher. Specifically, TMAH([(CH3)4N] + [OH] -), aqueous sodium hydroxide, ammonia, and the like; mixtures of these bases; mixtures of these bases with other substances (hydrogen peroxide, etc.); and the like. Among them, TMAH([(CH3)4N] + [OH] - ), an aqueous solution of sodium hydroxide, aqueous ammonia, and a mixed solution of aqueous hydrogen peroxide and aqueous ammonia are preferred.

[0080] The basic substance also includes a chemical solution having an oxidation-reduction potential (vs. NHE) of -2.0 to 0 V, preferably -1.0 to 0 V, and more preferably -0.5 to 0 V. Specifically, TMAH([(CH3)4N] + [OH] - ), aqueous sodium hydroxide solution, aqueous ammonia, hydroxylamine, hydrazine, hydrogen water, sodium sulfite and other basic substances; mixtures of these basic substances with other substances, and the like. Among them, TMAH([(CH3)4N] + [OH] - ), an aqueous solution of sodium hydroxide, aqueous ammonia, and a mixed solution of aqueous hydrogen peroxide and aqueous ammonia are preferred.

[0081] The oxidizing substance may be a chemical solution having an oxidation-reduction potential (vsNHE) of 0 to 3.0 V, preferably 0.5 to 2.5 V, and more preferably 1.0 to 2.1 V. Specific examples include sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide solution, and mixtures of these oxidizing substances with other substances (hydrofluoric acid, etc.). Among these, at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, hydrogen peroxide, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is preferred, and at least one selected from the group consisting of nitric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid is more preferred.

[0082] Examples of the organic solvent include esters such as methyl acetate, ethyl acetate, propyl acetate, n-butyl acetate, and tert-butyl acetate; ketones such as acetone, methyl ethyl ketone, and cyclohexanone; aliphatic hydrocarbons such as hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, and mineral spirits; aromatic hydrocarbons such as benzene, toluene, xylene, naphthalene, and solvent naphtha; alcohols such as methanol, ethanol, isopropyl alcohol, tert-butanol, and ethylene glycol monoalkyl ether; cyclic ethers such as tetrahydrofuran, tetrahydropyran, and dioxane; nitriles such as acetonitrile and propionitrile; amides such as dimethyl sulfoxide, N,N-dimethylformamide, and N,N-dimethylacetamide; halogenated hydrocarbons such as dichloromethane, dichloroethane, and chloroform; and mixtures thereof. Among these, alcohols are preferred, and isopropyl alcohol is more preferred.

[0083] The corrosive substance is preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, organic solvents, and brine, more preferably at least one selected from the group consisting of acidic substances, basic substances, oxidizing substances, and organic solvents, and even more preferably at least one selected from the group consisting of acidic substances and basic substances.

[0084] The corrosive substance is preferably at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, a sodium hydroxide aqueous solution, ammonia water, a mixed chemical solution of hydrogen peroxide and ammonia water, isopropyl alcohol, and salt water; more preferably at least one selected from the group consisting of hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, TMAH, a sodium hydroxide aqueous solution, a mixed chemical solution of hydrogen peroxide and ammonia water, and isopropyl alcohol; and even more preferably at least one selected from the group consisting of hydrofluoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and sulfuric acid, and TMAH.

[0085] The rubber member of the present disclosure may have only a portion (layer) containing the halogen-based rubber, or may have a portion (layer) containing the halogen-based rubber and other portions (layers). From the viewpoint of ensuring corrosion resistance, it is preferable that at least a portion of the surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the halogen-based rubber, and it is more preferable that the entire surface that comes into contact with the corrosive substance is composed of the portion (layer) containing the halogen-based rubber.

[0086] The rubber member of the present disclosure is used as at least one member selected from the group consisting of building materials, mobility members, aerospace members, medical members, semiconductor members, and information and communication members. As the above-mentioned member, a semiconductor member is preferred because of its excellent corrosion resistance and low metal elution amount, and a semiconductor manufacturing-related equipment member (an article for semiconductor manufacturing-related equipment) is more preferred.

[0087] Examples of the building materials (construction materials) include interior building materials such as baseboards, ceiling materials, and plumbing materials, and exterior building materials such as waterproof sheets, waterproofing materials, exterior wall materials, and roofing materials. Examples of the mobility components include parts used in ferries, trains, automobiles, motorcycles, drones, robots, etc. Examples of the aerospace members include exterior and interior materials for aircraft, rockets, etc., wire covering materials, cable protection materials, jet engines, cabin interior materials, and parts thereof. Examples of the medical components include piping materials, chemical containers, sterilization containers, medical tools, laboratory and analytical instruments, and packaging materials. Examples of the semiconductor materials include process materials used in semiconductor manufacturing and parts for semiconductor manufacturing-related devices. Examples of the information communication members include parts of devices such as wireless LAN transmission / reception circuits, circuit boards, and parts of devices such as optical communication devices.

[0088] Examples of components of the present disclosure include containers, piping, nozzles, tubes, tanks, joints, valves, pumps, housings, spin chucks, O-rings, packings, gaskets, washers, sealing materials, nuts, bolts, films, bottles, wire coatings, hoses, pipes, sheets, rollers, cocks, connectors, filter housings, filter cages, flow meters, wafer carriers, and wafer boxes.

[0089] The rubber member of the present disclosure is preferably applicable to at least one selected from the group consisting of containers, piping, nozzles, tubes, tanks, joints, valves, pumps, spin chucks, O-rings, packings, gaskets, washers, and sealing materials, since corrosion resistance is required. Among these, the present invention is preferably applicable to at least one selected from the group consisting of containers, piping, nozzles, tubes, tanks, joints, valves, pumps, spin chucks, O-rings, gaskets, washers, and sealing materials, more preferably applicable to at least one selected from the group consisting of O-rings, packings, gaskets, and sealing materials, and particularly preferably applicable to O-rings. The present invention can also be suitably used for the above-mentioned piping, nozzles, tubes, O-rings, packing, gaskets and sealing materials (preferably O-rings, packing, gaskets and sealing materials, more preferably O-rings) in semiconductor manufacturing related equipment.

[0090] The piping is not particularly limited, but its shape preferably has an inner diameter of 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 mm to 25 mm. Examples include a robust pipe type, a flexible hose that can be incorporated to fit the installation space, and a bellows pipe that is large in diameter but can be bent. The inside of the piping may be made of a clean (low contamination of the chemical solution by extracted ions) and chemical-resistant material, and may be subjected to high-precision polishing that does not generate dust and does not disturb the liquid or gas flow. Depending on the chemical liquid being flushed, such as an organic solvent, antistatic properties may be required to prevent static electricity from building up. In such cases, conductive fillers (carbon black, carbon nanotubes, etc.) may be added to the material to provide antistatic properties, provided that cleanliness is not adversely affected.

[0091] The nozzle is not particularly limited, but the tip may be precisely machined to match the size and shape of the part, and in addition, since it comes into contact with the part, it can be made of a highly hard and durable material that is resistant to friction and bending.

[0092] The tube is not particularly limited, but the tube diameter is preferably 2 mm to 400 mm, more preferably 2 mm to 100 mm, and particularly preferably 2 to 25 mm. Materials that have stress crack resistance, chemical resistance, excellent mechanical strength, and cleanliness (less contamination of the chemical solution by extracted ions) are used. Depending on the chemical solution being passed through, such as an organic solvent, antistatic properties may be required to prevent static electricity buildup. Conductive fillers (carbon black, carbon nanotubes, etc.) may be added to the tube to provide antistatic properties within a range that does not impair cleanliness.

[0093] The containers and tanks are not particularly limited, but may be precision cleaned (water washing, acetic acid immersion, hydrochloric acid immersion, nitric acid immersion, wiping cleaning, pure water cleaning, etc.) to remove dirt and residues. Packaging after cleaning may be carried out in a clean room or clean booth environment.

[0094] The joints and valves are not particularly limited, but are required to be oil-free, particle-free, dead space-free, and external leak-free, and the size is preferably in the range of Φ3.2 mm to 40 mm, and more preferably in the range of Φ3.2 to 12.7 mm.

[0095] The pump is not particularly limited, but may be required to have retractability.

[0096] The spin chuck is not particularly limited, but may be required to have hardness, corrosion resistance, and dimensional stability, and may be provided with electrical conductivity.

[0097] O-rings and sealing materials are not particularly limited, but the material properties required are excellent elasticity, good compression set, excellent wear resistance, excellent heat resistance, resistance to the liquids and gases used, and a long lifespan. In particular, O-rings used in semiconductor manufacturing equipment are used in harsh chemical environments, such as exposure to various plasmas, and therefore are required to have high heat resistance, chemical resistance, and plasma resistance. The compression set at 100°C for 72 hours is preferably 25% or less, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0098] Although there are no particular limitations on packings and gaskets, they may be required to have good compression set, a low coefficient of friction, and excellent abrasion resistance, and may also be required to have heat resistance, cold resistance, pressure resistance, and chemical resistance to prevent leakage. The compression set at 100°C for 72 hours is preferably 25% or less, more preferably 20% or less, even more preferably 15% or less, and even more preferably 10% or less.

[0099] The washer is not particularly limited, but is expected to be used in a clean room or the like and may be required to have durability, corrosion resistance, and rust prevention properties.

[0100] The members of the present disclosure can be used, for example, in the following applications: <Building materials> Furniture exterior materials, architectural interior materials such as walls, ceilings, and floors; Architectural exterior materials such as siding, exterior walls, fences, roofs, gates, gable boards, etc.; Surface finishing materials for window frames, doors, handrails, thresholds, lintels, etc.; Membrane materials (roofing materials, ceiling materials, exterior wall materials, interior wall materials, covering materials, etc.) for membrane structure buildings (sports facilities, horticultural facilities, atriums, etc.); Outdoor use boards (soundproof walls, windbreak fences, wave barriers, garage canopies, shopping malls, walkway walls, roofing materials); Building materials such as tent materials for tent warehouses, sunshade membrane materials, partial roof materials for lighting, window materials to replace glass, membrane materials for fireproof partitions, curtains, exterior wall reinforcement, waterproof membranes, smokeproof membranes, non-flammable transparent partitions, road reinforcement, etc.; Agricultural films, weather-resistant covers for various roofing materials and side walls; Glass covering materials such as non-combustible fire-resistant safety glass; etc. Among these, because corrosion resistance is required, it can be particularly suitably used for membrane materials for membrane structure buildings, outdoor board materials, tent materials for tent warehouses, sunshade membrane materials, partial roof materials for lighting, window materials in place of glass, membrane materials for fire-retardant partitions, curtains, exterior wall reinforcement, waterproof membranes, smoke-proof membranes, non-flammable transparent partitions, building materials such as road reinforcement, agricultural films, and weather-resistant covers for various roofing materials and side walls. When the member of the present disclosure is used for the above-mentioned applications, from the viewpoint of corrosion resistance and weather resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0101] <Mobility> O-rings, tubes, packings, valve core materials, hoses, seals, and diaphragms used in automotive fuel systems and peripheral devices (for example, injector O-rings, injector packings, fuel pump O-rings, diaphragms, fuel hoses, filler hoses, and evaporation hoses) (these may be for sour gasoline resistance, alcohol resistance, or fuels containing gasoline additives such as methyl tertiary butyl ether resistance and amine resistance); Hoses and sealants used in automobile automatic transmissions (e.g., ATF hoses); Gaskets, shaft seals, valve stem seals, sealing materials, and hoses used in automobile engines and peripheral devices (for example, carburetor flange gaskets, engine head gaskets, metal gaskets, crankshaft seals, camshaft seals, valve stem seals, manifold packings, and oil hoses); Oxygen sensors for automobile engines; Automotive brake hoses, air conditioning hoses, radiator hoses, radiator tanks, chemical tanks, bellows, spacers, rollers, gasoline tanks, bumpers, door trims, instrument panels, wire coverings and other automotive components; O-rings, tubes, packings, valve core materials, hoses, seal materials, and diaphragms used in ship fuel systems and peripheral equipment; Anti-corrosion tapes for piping, such as tapes wrapped around piping on ship decks, etc.; etc. Among these, because corrosion resistance is required, the material is particularly suitable for use in O-rings, tubes, packings, hoses, and seals used in automobile fuel systems and peripheral devices; hoses and seals used in automobile automatic transmission systems; other automobile parts such as automobile brake hoses, air conditioner hoses, radiator hoses, bellows, spacers, rollers, bumpers, door trims, and electrical wire coating materials; and O-rings, tubes, packings, valve core materials, hoses, seals, and diaphragms used in ship fuel systems and peripheral devices. When the member of the present disclosure is used for the above-mentioned applications, from the viewpoint of corrosion resistance and oil resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), brominated butyl rubber (BIIR), epichlorohydrin rubber (ECO) and chloroprene rubber (CR).

[0102] <Aerospace> O-rings, tubes, packings, valve core materials, hoses, seal materials, and diaphragms used in aircraft and rocket fuel systems and peripheral devices; etc. Among these, the material is particularly suitable for use in O-rings, tubes, packings, hoses, and sealing materials used in fuel systems and peripheral devices of aircraft and rockets, as they are required to have corrosion resistance. When the member of the present disclosure is used for the above-mentioned applications, from the viewpoint of corrosion resistance and weather resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), brominated butyl rubber (BIIR), epichlorohydrin rubber (ECO) and chloroprene rubber (CR).

[0103] <Medical care> Medical infusion tubes, blood collection tubes, drainage tubes, catheters, catheter connection parts, stents, piping, joints, tube connectors, valves, filters and other plumbing materials; Liquid, powder, or solid pharmaceutical containers, such as packaging, bottles, bottle caps, vials, ampoules, prefilled syringes, infusion bags, infusion bag connectors, sealed medicine pouches, press-through packages, eye drop containers, etc.; Sample containers such as urine collection bags, blood test tubes, blood collection tubes, test cells, specimen containers, etc.; Sterilized containers for medical equipment such as scalpels, forceps, gauze, contact lenses, etc.; Housings for electronic devices such as medical sensors, cardiac devices, and pacemakers; Medical devices such as inhalation masks, syringes, syringe rods, injection needles, surgical trays, protective stoppers, rubber stoppers, endoscopes, etc.; Beakers, petri dishes, flasks, test tubes, centrifuge tubes, and other laboratory and analytical equipment; Medical optical components such as plastic lenses for medical examinations; Artificial organs and parts thereof, such as denture bases, dentures, artificial hearts, artificial tooth roots, artificial bones, and artificial joints; etc. Among these, from the viewpoint of chemical resistance and heat resistance, the polymer film can be particularly suitably used for medical infusion tubes, blood collection tubes, drainage tubes, catheters, piping, joints, tube connectors, valves, bottles, bottle caps, vials, ampoules, prefilled syringes, infusion bags, urine collection bags, sampling test tubes for blood tests, blood collection tubes, test cells, specimen containers, sterilization containers, syringes, syringe rods, surgical trays, and protective stoppers. When the member of the present disclosure is used for the above-mentioned applications, from the viewpoint of chemical resistance and heat resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0104] <Information and Communications> High frequency circuit insulating plates, insulating materials for connecting parts, printed circuit boards; High frequency vacuum tube bases and antenna covers; Wire covering materials for coaxial cables, LAN cables, etc. Fiber optic cladding materials; Displays such as LCD displays; Mobile phone components; etc. Among these, because corrosion resistance is required, the material can be particularly suitably used for insulating plates for high-frequency circuits, insulating materials for connecting parts, printed wiring boards; bases and antenna covers for high-frequency vacuum tubes; wire coating materials for coaxial cables, LAN cables, etc.; and optical fiber coating materials. When the member of the present disclosure is used for the above-mentioned applications, from the viewpoint of corrosion resistance, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0105] <Semiconductors> Chemical liquid transfer components such as chemical liquid tanks, containers, housings, piping, O-rings, tubes, packing, valve core materials, hoses, seal materials, rolls, gaskets, washers, diaphragms, nozzles, joints, coatings, and linings for the inner surfaces of pipes used in semiconductor factories and semiconductor manufacturing-related equipment; Pharmaceutical stoppers, packaging films; Waste liquid transport components such as tanks, containers, tubes, hoses, joints, nozzles, etc. High-temperature liquid transport components such as containers, tubes, and hoses for transporting high-temperature liquids; Steam piping components such as steam piping tubes and hoses; etc. Among these, the material is particularly suitable for use in O-rings, tubes, packings, hoses, sealing materials, rolls, gaskets, diaphragms, and joints in semiconductor manufacturing related equipment, as corrosion resistance is required. When the member of the present disclosure is used for the above-mentioned applications, the halogen-based rubber is preferably at least one selected from the group consisting of chlorosulfonated ethylene rubber (CSM), chlorinated polyethylene rubber (CM), chlorinated butyl rubber (CIIR), and brominated butyl rubber (BIIR).

[0106] The semiconductor manufacturing equipment for the above-mentioned semiconductor manufacturing related equipment includes photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), baking equipment, descum equipment), thin film formation, etching, cleaning and drying equipment (vacuum deposition equipment, sputtering equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection and evaluation equipment and other manufacturing equipment (defect repair equipment), wafer processing equipment (wafer marking equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment, baking equipment), etching Equipment (dry etching equipment, wet etching equipment), cleaning and drying equipment (dry cleaning equipment, wet cleaning equipment, scrub cleaning equipment, drying equipment), heat treatment equipment (oxidation equipment, diffusion equipment, annealing equipment), ion implantation equipment (high current ion implantation equipment, medium current ion implantation equipment, high energy ion implantation equipment), thin film formation equipment, CVD equipment (high pressure CVD equipment, SACVD, low pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), sputtering equipment, other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor Conductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), inspection and evaluation equipment (Auger electron spectroscopy equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (wafer marking equipment, back grinding machines, bump plating equipment, back grinder tape applicators, back grinders, back grinder tape peelers), dicing equipment (dicing equipment, wafer mounting equipment), bonding equipment (die bonding equipment, hybrid bonding equipment, wire bonding equipment, inner lead bonder These include equipment such as bonding equipment, outer lead bonding equipment, flip chip bonding equipment, packaging equipment (molding equipment, deburring equipment, solder processing equipment), other testing equipment (electron beam testing equipment, laser beam testing equipment), probing equipment (probers), handlers, aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (cold heat testing equipment, temperature and humidity testing equipment, pressure cooker equipment, laser processing systems, various life test equipment).Equipment related to semiconductor manufacturing equipment includes various transport devices (intra-process wafer transport devices, inter-process wafer transport devices, stockers), pure water and chemical equipment (pure water production equipment, ultrafiltration equipment, reverse osmosis equipment, sterilization equipment, chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (clean benches, clean tunnels, thermal chambers, environmental testing equipment, air showers, pass boxes), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various taping equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0107] Among these, semiconductor manufacturing equipment in which corrosive substances are used within the equipment is not particularly limited, but from the viewpoint of making use of the physical properties of chemical resistance, photolithography process equipment (coating equipment, resist stripping equipment, developing equipment (developer), descum equipment), thin film formation, etching, cleaning and drying equipment (vacuum deposition equipment, CVD equipment, cleaning equipment, etching equipment, drying equipment, scrub cleaning equipment), inspection evaluation equipment and other manufacturing equipment (defect repair equipment), resist processing equipment (coating equipment, developing equipment, resist stripping equipment, ashing equipment), etching equipment (dry etching equipment, wet etching equipment), cleaning Preferred are cleaning / drying equipment (wet cleaning equipment, scrub cleaning equipment, drying equipment), CVD equipment (high-pressure CVD equipment, SACVD, low-pressure CVD, plasma CVD equipment, metal CVD equipment, ALD equipment), other thin film formation equipment (vacuum deposition equipment, silicon epitaxial growth equipment, compound semiconductor epitaxial equipment (MOCVD equipment, MBE equipment), plating equipment), CMP equipment (CMP equipment, CMP cleaning equipment), other processing equipment (bump plating equipment), aging equipment (aging equipment, burn-in equipment, IC insertion equipment, IC extraction equipment), and other inspection equipment (various life test equipment). Preferred examples of equipment related to semiconductor manufacturing equipment include pure water and chemical liquid equipment (chemical supply equipment, slurry supply equipment, chemical purification equipment, waste liquid treatment equipment), various gas equipment (gas generators, gas purification equipment, gas mixing equipment, gas detection equipment, exhaust gas treatment equipment), clean room equipment (thermal chambers, environmental testing equipment), and other manufacturing-related equipment (various jig cleaning and drying equipment, flow control equipment, various packaging equipment, measuring equipment for liquids and various gases).

[0108] As described above, the rubber member of the present disclosure can be suitably used as a member for semiconductor manufacturing-related equipment (an article for semiconductor manufacturing-related equipment), but because of its excellent chemical resistance, it is more suitable as a member constituting semiconductor manufacturing-related equipment in which chemicals are used inside the equipment, in particular as a member that comes into contact with chemicals.

[0109] The chemicals are not particularly limited, but include chemicals used in semiconductor manufacturing related equipment, etc. The chemicals can be used alone or in combination of two or more.

[0110] Specific examples of the chemical include TMAH([(CH3)4N] + [OH] - ), sulfuric acid, a sodium hydroxide solution, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM (Sulfuric Acid Hydrogen Peroxide Mixture), SC1 (a mixture of NH4OH, HO and HO), SC2 (a mixture of HCl, HO and HO), phosphoric acid, and hydrochloric acid. Among these, TMAH, isopropyl alcohol, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, SPM, SC1, SC2, phosphoric acid, and hydrochloric acid are preferred, and TMAH, hydrofluoric acid, a mixed acid of hydrofluoric acid and nitric acid, and SPM are more preferred.

[0111] Other examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gases, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas. Also preferred examples of the chemical include at least one selected from the group consisting of silicon-based gases, arsenic-based gases, phosphorus-based gases, boron-based gases, metal hydride gases, metal alkyl gases, halogenated hydrocarbon gases, halogen-halide gases, nitrogen oxide gases, hydrogen sulfide gas, ammonia gas, trimethylamine gas, propane gas, trimethylaluminum gas, hydrogen gas, helium gas, nitrogen gas, oxygen gas, argon gas, and carbon dioxide gas.

[0112] Examples of the silicon-based gas include monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, silicon tetrafluoride, and disilane. Examples of the arsenic-based gas include arsine, arsenic fluoride (III), arsenic fluoride (V), arsenic chloride (III), and arsenic chloride (V). Examples of the phosphorus-based gas include phosphine, phosphorus(III) fluoride, phosphorus(V) fluoride, phosphorus(III) chloride, phosphorus(V) chloride, and phosphorus oxychloride. Examples of the boron-based gas include diborane, boron trifluoride, boron trichloride, and boron tribromide. Examples of the metal hydride gas include hydrogen selenide, monogermane, hydrogen telluride, stibine, and tin hydride. Examples of the metal alkyl gas include trialkylgallium and trialkylindium. Examples of the halogenated hydrocarbon gas include tetrafluoromethane, trifluoromethane, difluoromethane, hexafluoropropane, octafluoropropane, and octafluorocyclobutane. Examples of the halogen / halide gas include fluorine, hydrogen fluoride, chlorine, hydrogen chloride, carbon tetrachloride, hydrogen bromide, sulfur hexafluoride, nitrogen trifluoride, sulfur tetrafluoride, tungsten(VI) fluoride, molybdenum(VI) fluoride, germanium tetrachloride, tin(IV) chloride, antimony(V) chloride, tungsten(VI) chloride, and molybdenum hexachloride. Examples of the nitrogen oxide gas include nitric oxide, nitrogen dioxide, and dinitrogen monoxide. Among these, ammonia gas, nitrogen trifluoride, dinitrogen monoxide, monosilane, and octafluorocyclobutane are preferred, and ammonia gas, nitrogen trifluoride, and dinitrogen monoxide are more preferred.

[0113] The semiconductor manufacturing related equipment member (semiconductor manufacturing related equipment article) may have only the portion (layer) containing the halogen-based rubber, or may have the portion (layer) containing the halogen-based rubber and other portions (layers). From the viewpoint of ensuring chemical resistance, it is preferable that at least a portion of the surface that comes into contact with the chemicals is composed of the portion (layer) containing the halogen-based rubber, and it is more preferable that the entire surface that comes into contact with the chemicals is composed of the portion (layer) containing the halogen-based rubber.

[0114] The rubber member of the present disclosure is preferably such that a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in each of the four chemical solutions (1), (3), (5), and (6) described below for one week, and the relative mass after immersion, where the mass before immersion is 100, is 60 to 140. A member that satisfies these requirements has excellent corrosion resistance. The relative value is more preferably 85 or more, even more preferably 90 or more, even more preferably 95 or more, and particularly preferably 98 or more, and is more preferably 120 or less, even more preferably 110 or less, even more preferably 108 or less, and particularly preferably 105 or less. Ideally (most preferably), it is 100.

[0115] It is more preferable that the rubber member of the present disclosure is such that a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in each of the nine chemical solutions (1) to (9) described below for one week, and the relative values ​​of the mass after immersion, with the mass before immersion being 100, are all within the above-mentioned range.

[0116] The rubber member of the present disclosure is preferably such that when a test piece (size: 10 mm × 50 mm × 2 mm) of the rubber member is immersed in each of nine chemical solutions (1) to (9) described below for one week and the relative values ​​of the mass after immersion are calculated, with the mass before immersion being taken as 100, the average of the relative values ​​for the nine chemical solutions is 80 to 120, and the standard deviation is 20 or less. A member that satisfies these requirements has excellent corrosion resistance. The average of the relative values ​​is more preferably 85 or more, even more preferably 90 or more, even more preferably 95 or more, and particularly preferably 97 or more, and is more preferably 110 or less, even more preferably 108 or less, even more preferably 107 or less, even more preferably 106 or less, even more preferably 105 or less, and particularly preferably 104 or less. Ideally (most preferably), it is 100. The standard deviation of the relative values ​​is more preferably 15 or less, even more preferably 10 or less, even more preferably 9 or less, even more preferably 7 or less, even more preferably 6 or less, particularly preferably 5 or less, and may be 0 or more, 1 or more, or 3 or more. Ideally (most preferably) it is 0.

[0117] The chemical solutions used for immersing the test pieces are as follows: (1)25% by mass TMAH([(CH3)4N] + [OH] - )(80℃) (2) 100% isopropyl alcohol (80°C) (3) 49% by mass hydrofluoric acid (70℃) (4) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) (6) SPM (a mixture of 98% sulfuric acid and 30-36% hydrogen peroxide in a volume ratio of 2:1) (80°C) (7) SC1 (a mixture of 25 to 28% by mass ammonia water, 30 to 36% by mass hydrogen peroxide water, and deionized water in a volume ratio of 1:1:5) (70°C) (8) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) (9)85% by mass phosphoric acid (80℃)

[0118] In the rubber member of the present disclosure, when a test piece (size: 10 mm × 50 mm × 2 mm) of the member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution (by mass) of each of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is preferably 30 ppb or less, more preferably 15 ppb or less, even more preferably 4 ppb or less, even more preferably 3.5 ppb or less, even more preferably 3.2 ppb or less, and particularly preferably 1 ppb or less.

[0119] It is preferable that the rubber member of the present disclosure has a metal elution amount (by mass) of two elements (Ca, Pb) of 10,000 ppb or less each when a test piece (size: 10 mm × 50 mm × 2 mm) of the member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week. The amount of Ca elution is more preferably 100 ppb or less, even more preferably 80 ppb or less, even more preferably 30 ppb or less, even more preferably 27 ppb or less, and particularly preferably 25 ppb or less. The amount of Pb elution is more preferably 6000 ppb or less, even more preferably 100 ppb or less, even more preferably 30 ppb or less, even more preferably 25 ppb or less, even more preferably 23 ppb or less, and particularly preferably 10 ppb or less.

[0120] In the rubber member of the present disclosure, when a test piece (size: 10 mm × 50 mm × 2 mm) of the member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, it is preferable that the amount of metal elution (by mass) of each of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less.

[0121] The amount of elution of any of the above elements is ideally (most preferably) 0 ppb, but may be an amount below the detection limit or more.

[0122] The rubber member of the present disclosure can be produced, for example, by kneading an uncrosslinked halogen-based rubber and a crosslinking agent, and further, if necessary, the above-mentioned acid acceptor, processing aid, crosslinking aid, reinforcing material (filler), plasticizer, and other components to obtain a rubber composition, and then molding and crosslinking the resulting rubber composition.

[0123] The kneading method is not particularly limited, and known methods using an internal mixer, a roll kneader, or the like can be employed.

[0124] The molding method is not particularly limited, and known methods such as compression molding, injection molding, transfer molding, and extrusion molding can be used.

[0125] The crosslinking method is not particularly limited, and known methods such as hot air crosslinking, microwave crosslinking, electron beam crosslinking, and heat pressing can be used. The crosslinking temperature depends on the crosslinking agent, but is, for example, preferably 100°C or higher, more preferably 130°C or higher, and even more preferably 140°C or higher, and is preferably 250°C or lower, more preferably 200°C or lower, more preferably 190°C or lower, and even more preferably 180°C or lower. The crosslinking time depends on the crosslinking agent, but is, for example, preferably 5 minutes or more, more preferably 10 minutes or more, even more preferably 15 minutes or more, even more preferably 20 minutes or more, and is preferably 300 minutes or less, more preferably 200 minutes or less, even more preferably 150 minutes or less, even more preferably 120 minutes or less, and particularly preferably 60 minutes or less.

[0126] The present disclosure also relates to semiconductor manufacturing-related equipment equipped with the rubber member of the present disclosure. The use of the member of the present disclosure can impart excellent corrosion resistance to the equipment.

[0127] The semiconductor manufacturing-related device of the present disclosure is preferably one of the semiconductor manufacturing devices and related devices described above. Also, the semiconductor manufacturing-related device of the present disclosure is preferably at least one selected from the group consisting of semiconductor manufacturing devices and related devices for semiconductor manufacturing devices.

[0128] The semiconductor manufacturing equipment is at least one selected from the group consisting of photolithography process equipment, thin film formation / etching / cleaning / drying equipment, inspection / evaluation equipment / manufacturing equipment, resist processing equipment, etching equipment, cleaning / drying equipment, CVD equipment, thin film formation equipment, CMP equipment, processing equipment, aging equipment, and inspection equipment; The semiconductor manufacturing related equipment is preferably at least one selected from the group consisting of pure water / chemical equipment, gas equipment, clean room equipment, and manufacturing related equipment.

[0129] The photolithography process device is at least one selected from the group consisting of a coating device, a resist stripping device, a developing device (developer), and a descum device; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; The above inspection and evaluation equipment and manufacturing equipment are defect repair equipment, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, and an ashing device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, The cleaning / drying device is at least one selected from the group consisting of a wet cleaning device, a scrub cleaning device, and a drying device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, an SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; The CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a CMP cleaning apparatus, the processing device is a bump plating device, the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC extraction device; The inspection device is a life test device, The pure water / chemical device is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; The clean room device is at least one selected from the group consisting of a thermal chamber and an environmental testing device, The manufacturing-related equipment is preferably at least one selected from the group consisting of jig cleaning / drying equipment, flow rate control equipment, packaging equipment, and liquid / gas measuring equipment.

[0130] Although the embodiments have been described above, it will be understood that various changes in form and details can be made without departing from the spirit and scope of the claims. [Example]

[0131] The present disclosure will now be described in more detail with reference to examples, but the present disclosure is not limited to these examples.

[0132] Various physical properties were measured by the following methods.

[0133] <Chemical resistance (corrosion resistance) test> The rubber sheets obtained in the examples and comparative examples were cut into test pieces measuring 10 mm x 50 mm x 2 mm. The specimens were dried at 60°C for 2 hours. After drying, the mass of the test piece before immersion was measured under room temperature (20°C). After the measurement, the test piece was completely immersed in each of the following chemical solutions (1) to (9) and kept there for one week (168 hours). After the holding, the test piece was washed with pure water, water droplets on the surface were wiped off, and the test piece was dried at 60°C for 12 hours, and the mass of the test piece after immersion was measured under room temperature (20°C) conditions. From the measured masses before and after immersion, the relative value of the mass after immersion was calculated, with the mass before immersion being set at 100. In addition, the average and standard deviation of the mass (relative value) after immersion for the nine types (1) to (9) were calculated. (medicinal solution) (1)25% by mass TMAH([(CH3)4N] + [OH] - )(80℃) (2) 100% by mass IPA (isopropyl alcohol) (80°C) (3) 49% by mass hydrofluoric acid (70℃) (4) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:5) (20°C) (5) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) (6) SPM (a mixture of 98% sulfuric acid and 30-36% hydrogen peroxide in a volume ratio of 2:1) (80°C) Oxidation-reduction potential (vs. NHE): 1.8 V (7) SC1 (a mixture of 25-28% by mass ammonia water, 30-36% by mass hydrogen peroxide water, and deionized water in a volume ratio of 1:1:5) (70°C) Oxidation-reduction potential (vs. NHE): 1.2 V (8) SC2 (a mixture of 35-37% by mass hydrochloric acid, 30-36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) Oxidation-reduction potential (vs. NHE): 1.6 V (9)85% by mass phosphoric acid (80℃)

[0134] <Metal elution test> The rubber sheets obtained in the examples and comparative examples were cut into test pieces measuring 10 mm x 50 mm x 2 mm. As a pre-cleaning step, the test pieces were immersed in 3.6% by mass hydrochloric acid for 1 hour, followed by running pure water. The test pieces were then immersed in 100 mL of 3.6% by mass hydrochloric acid at 23°C. One week (168 hours) after the start of immersion, a portion of each immersion solution was extracted, and the metal concentrations of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, and Pb) were measured using an ICP-MSI (Agilent 8900, manufactured by Agilent Technologies) to determine the amount of metal elution.

[0135] The materials used in the examples and comparative examples are shown below. (rubber) TOSO-CSM TS-530: Tosoh Corporation chlorosulfonated ethylene rubber (CSM), chlorine content: 35% by mass, sulfur content: 1.0% by mass, Mooney viscosity ML 1+4 (100℃):56 TOSO-CSM TS-830: Tosoh Corporation chlorosulfonated ethylene rubber (CSM), chlorine content: 36% by mass, sulfur content: 1.0% by mass, Mooney viscosity ML 1+4 (100℃):90 Eraslen 351A: Chlorinated polyethylene (CM) manufactured by Resonac Corporation, chlorine content: 34.0 to 37.0 mass%, Mooney viscosity ML 1+4 (121℃):90 Eraslen 401A: Chlorinated polyethylene (CM) manufactured by Resonac Corporation, chlorine content: 38.0 to 41.0 mass%, Mooney viscosity ML 1+4 (121℃):115 Zetpol 2001L: Hydrogenated nitrile rubber (HNBR) manufactured by Zeon Corporation KE-951-U: Silicone rubber (Q) manufactured by Shin-Etsu Chemical Co., Ltd. (carbon black) Seast GS: SRF carbon black manufactured by Tokai Carbon Co., Ltd. Seast G-SO: FEF carbon black, manufactured by Tokai Carbon Co., Ltd. (Crosslinking agent) Percumyl D-40: NOF Corporation, dicumyl peroxide Sancerer 22-C: Sanshin Chemical Industry Co., Ltd., 2-imidazoline-2-thiol (ETU) Peroximon F-40: NOF Corporation, α,α'-bis(t-butylperoxy)diisopropylbenzene C-8: 2,5-dimethyl-2,5-bis(t-butylperoxy)hexane, manufactured by Shin-Etsu Chemical Co., Ltd. (Vulcanization accelerator) TAIC (triallyl isocyanurate): "TAIC" manufactured by Mitsubishi Chemical Corporation Noccela DM: Ouchi Shinko Chemical Industry Co., Ltd., dibenzothiazole disulfide (MBTS) Noccela TRA: Ouchi Shinko Chemical Industry Co., Ltd., dipentamethylene thiuram tetrasulfide (DPTT) Noccela DT: Ouchi Shinko Chemical Industry Co., Ltd., di-o-tolylguanidine (DOTG) (acid acceptor) Litharge: Mitsui Mining & Smelting Co., Ltd., lead oxide (PbO) JP-200: NISSO-PB JP-200 manufactured by Nippon Soda Co., Ltd., epoxidized polybutadiene, number average molecular weight: 2200 g / mol, epoxy equivalent: 210-240 (processing aids) Splendor R-300V: Kao Corporation, fatty acid ester (Crosslinking aid) Nocrac CD: 4,4'-bis(α,α-dimethylbenzyl)diphenylamine manufactured by Ouchi Shinko Chemical Industry Co., Ltd. Nocrac MBZ: Manufactured by Ouchi Shinko Chemical Industry Co., Ltd., zinc salt of 2-mercaptobenzimidazole

[0136] Examples 1 to 9 and Comparative Example 1 According to the compounding ratios shown in Tables 1 to 3, kneading in an internal mixer (kneading A) was carried out using a Labo Plastomill Banbury-type mixer B-250 (manufactured by Toyo Seiki Seisakusho Co., Ltd.) from a predetermined starting temperature for 5 minutes. Next, kneading with a roll (kneading B) was carried out at 50±10°C using an electrically heated high-temperature roll machine (manufactured by Ikeda Machinery Industry Co., Ltd.). After kneading, crosslinking was carried out under predetermined conditions using an electric heating press (manufactured by Ohtake Machinery Industry Co., Ltd.) to produce a rubber sheet (rubber member). The obtained rubber sheets were subjected to a chemical resistance test. A metal elution test was also carried out for Examples 1 to 9. The results are shown in Tables 1 to 3.

[0137] Comparative Example 2 According to the compounding ratios shown in Table 4, kneading with a roll (kneading B) was carried out at 50±10°C using an electrically heated high-temperature roll machine (manufactured by Ikeda Machinery Co., Ltd.). After kneading, the mixture was pressed at 165°C for 10 minutes using an electric heating press (manufactured by Ohtake Machinery Co., Ltd.), and then secondary vulcanization was carried out at 200°C for 4 hours to produce a rubber sheet (rubber member). The resulting rubber sheet was subjected to a chemical resistance test, and the results are shown in Table 4.

[0138] [Table 1]

[0139] [Table 2]

[0140] [Table 3]

[0141] [Table 4]

[0142] The rubber members of the examples were suitable for use as members (components) in semiconductor manufacturing related equipment where chemicals are used.

Claims

1. A rubber member comprising a halogen-based rubber containing at least one selected from the group consisting of chlorine, bromine, and iodine, the rubber member is at least one selected from the group consisting of building materials, mobility materials, aerospace materials, semiconductor materials, and information and communication materials; Rubber parts that come into contact with corrosive substances.

2. 2. The rubber member according to claim 1, wherein the halogen-containing rubber is at least one selected from the group consisting of chlorosulfonated ethylene rubber and chlorinated polyethylene rubber.

3. 3. The rubber member according to claim 1, further comprising at least one acid acceptor selected from the group consisting of lead compounds and epoxy compounds.

4. 4. The rubber member according to claim 3, wherein the acid acceptor is at least one selected from the group consisting of lead oxide and epoxidized polybutadiene.

5. 4. The rubber member according to claim 3, wherein the halogen-containing rubber contains the acid acceptor in an amount of 1 to 35% by mass.

6. 4. The rubber member according to claim 3, wherein the halogen-containing rubber contains the acid acceptor in an amount of 10 to 30% by mass.

7. 3. The rubber member according to claim 1, wherein the halogen-containing rubber is crosslinked with a peroxide crosslinking agent and / or a sulfur-containing crosslinking agent.

8. The rubber member according to claim 1 or 2, which is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a packing, a gasket, a washer, and a sealing material.

9. The rubber member according to claim 1 or 2, which is at least one selected from the group consisting of a container, a pipe, a nozzle, a tube, a tank, a joint, a valve, a pump, a spin chuck, an O-ring, a gasket, a washer, and a sealing material.

10. 3. The rubber member according to claim 1, wherein the corrosive substance has a pH of 6 or less or 8 or more.

11. 3. The rubber member according to claim 1, wherein the oxidation-reduction potential (vs. NHE) of the corrosive substance is −2.0 to 3.0 V.

12. 3. The rubber member according to claim 1, wherein the corrosive substance is at least one selected from the group consisting of an acidic substance, a basic substance, an oxidizing substance, an organic solvent, and salt water.

13. 13. The rubber member according to claim 12, wherein the acidic substance is at least one selected from the group consisting of sulfuric acid, hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed chemical solution of hydrogen peroxide and hydrochloric acid, and a mixed chemical solution of hydrogen peroxide and sulfuric acid.

14. The basic substance is TMAH([(CH ３ ) ４ N] ＋ [OH] － 13. The rubber member according to claim 12, wherein the chemical agent is at least one selected from the group consisting of an aqueous solution of sodium hydroxide, aqueous ammonia, and a mixed solution of aqueous hydrogen peroxide and aqueous ammonia.

15. The corrosive substance is hydrofluoric acid, nitric acid, phosphoric acid, hydrochloric acid, a mixed acid of hydrofluoric acid and nitric acid, a mixed solution of hydrogen peroxide and hydrochloric acid, a mixed solution of hydrogen peroxide and sulfuric acid, TMAH([(CH ３ ) ４ N] ＋ [OH] － 3. The rubber member according to claim 1, wherein the agent is at least one selected from the group consisting of an aqueous solution of sodium hydroxide, a mixed solution of hydrogen peroxide and aqueous ammonia, and isopropyl alcohol.

16. 3. The rubber member according to claim 1, wherein the rubber member is a member for semiconductor manufacturing related equipment.

17. 17. The rubber member according to claim 16, wherein the semiconductor manufacturing related equipment uses chemicals inside the equipment.

18. The rubber member according to claim 1 or 2, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following four chemical solutions for one week, and the relative value of the mass after immersion, where the mass before immersion is 100, is 60 to 140 in all cases. (Chemical solution) 25 mass% TMAH ([(CH ３ ) ４ N] ＋ [OH] － ) (80℃) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid and 30-36% hydrogen peroxide in a volume ratio of 2:1) (80°C)

19. 3. The rubber member according to claim 1 or 2, wherein a test piece of the rubber member (size: 10 mm x 50 mm x 2 mm) is immersed in each of the following nine types of chemical solutions for one week, and the relative values ​​of the mass after immersion are calculated, with the mass before immersion being set to 100. The average of the relative values ​​for the nine types of chemical solutions is 80 to 120, and the standard deviation is 20 or less. (Chemical solution) 25 mass% TMAH ([(CH ３ ) ４ N] ＋ [OH] － ) (80℃) 100% by mass isopropyl alcohol (80°C) 49% by mass hydrofluoric acid (70°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% hydrofluoric acid and 69-71% nitric acid by volume in a ratio of 1:5) (20°C) Mixed acid of hydrofluoric acid and nitric acid (a mixture of 49% by mass hydrofluoric acid and 69-71% by mass nitric acid in a volume ratio of 1:100) (20°C) SPM (a mixture of 98% sulfuric acid and 30-36% hydrogen peroxide in a volume ratio of 2:1) (80°C) SC1 (a mixture of 25 to 28% by mass ammonia water, 30 to 36% by mass hydrogen peroxide water, and deionized water in a volume ratio of 1:1:5) (70°C) SC2 (a mixture of 35 to 37% by mass hydrochloric acid, 30 to 36% by mass hydrogen peroxide, and deionized water in a volume ratio of 1:1:4) (70°C) 85% by mass phosphoric acid (80°C)

20. 3. The rubber member according to claim 1 or 2, wherein when a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of each of 14 elements (Li, Na, Mg, Al, K, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd) is 30 ppb or less.

21. 3. A rubber member according to claim 1 or 2, wherein when a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member is immersed in 3.6 mass% hydrochloric acid at 23°C for one week, the amount of metal elution of two elements (Ca, Pb) is 10,000 ppb or less each.

22. 3. The rubber member according to claim 1 or 2, wherein when a test piece (size: 10 mm x 50 mm x 2 mm) of the rubber member is immersed in 3.6 mass % hydrochloric acid at 23°C for one week, the amount of metal elution of 16 elements (Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Ag, Cd, Pb) is 10,000 ppb or less for each.

23. 3. A semiconductor manufacturing related device equipped with the rubber member according to claim 1 or 2.

24. 24. The semiconductor manufacturing related equipment according to claim 23, which is at least one selected from the group consisting of semiconductor manufacturing equipment and equipment related to semiconductor manufacturing equipment.

25. the semiconductor manufacturing equipment is at least one selected from the group consisting of a photolithography process equipment, a thin film formation / etching / cleaning / drying equipment, an inspection / evaluation equipment / manufacturing equipment, a resist processing equipment, an etching equipment, a cleaning / drying equipment, a CVD equipment, a thin film formation equipment, a CMP equipment, a processing equipment, an aging equipment, and an inspection equipment; 25. The semiconductor manufacturing related equipment according to claim 24, wherein the semiconductor manufacturing related equipment is at least one selected from the group consisting of a pure water / chemical equipment, a gas equipment, a clean room equipment, and manufacturing related equipment.

26. the photolithography process equipment is at least one selected from the group consisting of a coating equipment, a resist stripping equipment, a developing equipment (developer), and a descum equipment; the thin film formation / etching / cleaning / drying apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a cleaning apparatus, a drying apparatus, and a scrub cleaning apparatus; the inspection and evaluation device / manufacturing device is a defect repair device, the resist treatment device is at least one selected from the group consisting of a coating device, a developing device, a resist stripping device, and an ashing device; the etching apparatus is at least one selected from the group consisting of a dry etching apparatus and a wet etching apparatus, The cleaning and drying device is at least one selected from the group consisting of a wet cleaning device, a scrub cleaning device, and a drying device; the CVD apparatus is at least one selected from the group consisting of a high-pressure CVD apparatus, a SACVD apparatus, a low-pressure CVD apparatus, a plasma CVD apparatus, a metal CVD apparatus, and an ALD apparatus; the thin film forming apparatus is at least one selected from the group consisting of a vacuum deposition apparatus, a silicon epitaxial growth apparatus, a compound semiconductor epitaxial apparatus (MOCVD apparatus, MBE apparatus), and a plating apparatus; the CMP apparatus is at least one selected from the group consisting of a CMP apparatus and a cleaning apparatus for CMP, the processing device is a bump plating device, the aging device is at least one selected from the group consisting of an aging device, a burn-in device, an IC insertion device, and an IC removal device; the inspection device is a life test device, the pure water / chemical liquid device is at least one selected from the group consisting of a chemical supply device, a slurry supply device, a chemical purification device, and a waste liquid treatment device; The gas device is at least one selected from the group consisting of a gas generator, a gas purifier, a gas mixer, a gas detector, and an exhaust gas treatment device; the clean room device is at least one selected from the group consisting of a thermal chamber and an environmental testing device; 26. The semiconductor manufacturing related equipment according to claim 25, wherein the manufacturing related equipment is at least one selected from the group consisting of a jig cleaning / drying device, a flow control device, a packaging device, and a liquid / gas measuring device.

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