Laminate, and production method of laminate, as well as laminate base plate, and production method of laminate base plate

Abstract

To provide a production method of a laminate base plate having excellent adhesiveness between an insulating board and a metal circuit in which the metal circuit disposed on the insulating board and a projection protruding to the further outside than a principal surface of the insulating board are integrally formed.SOLUTION: A production method of a laminate base plate includes: laminating a metal plate, a semi-cured resin impregnated plate, and a conductive plate in this order; obtaining a laminate by curing a semi-cured resin through heat treatment of the semi-cured resin impregnated plate at a temperature of 200°C or lower and by bonding the cured product of the semi-cured resin impregnated plate, the metal plate, and the conductive plate; and forming a wiring pattern on the conductive plate of the laminate. The conductive plate has a base plate part existing on the semi-cured resin impregnated plate and a part existing outside of a principal surface of the semi-cured resin impregnated plate in a top view.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a laminate, a method for manufacturing a laminate, a laminate substrate, and a method for manufacturing a laminate substrate. [Background technology]

[0002] Components such as power devices, transistors, thyristors, and CPUs are required to efficiently dissipate the heat generated during use. In response to this demand, efforts are being made to improve the heat dissipation performance of printed wiring boards (PWBs) that have metal circuits and on which electronic components are mounted by increasing the thermal conductivity of the insulating layer that makes up the PWB or by attaching the PWB to a heat sink via thermal interface materials that have electrical insulation.

[0003] The insulating layer described above uses a ceramic plate made of silicon nitride or the like. Brazing filler metal is used to bond the ceramic plate to the metal circuit, which requires heating at a relatively high temperature. Therefore, if the area of ​​the metal plate to be laminated (the plate before the metal circuit pattern is formed) is larger than the area of ​​the ceramic plate, the weight of the metal plate may cause deformation of the metal plate during heating. Such deformation may result in peeling between the ceramic plate and the metal circuit, poor contact, and other problems. Therefore, the shape of the metal plate to be laminated is limited to a shape that fits within the area of ​​the main surface of the ceramic plate. Therefore, to connect to an external circuit, a separate terminal must be provided on the metal plate or the metal circuit after the ceramic plate and metal plate are bonded together.

[0004] Instead of ceramic plates, composites composed of ceramics such as boron nitride and semi-cured resins have also been used as insulating layers with heat dissipation and adhesive properties. Furthermore, the use of composite sheets, such as semi-cured resin-impregnated plates obtained by impregnating porous ceramic plates (e.g., boron nitride sintered plates) with semi-cured resins, has also been considered (see, for example, Patent Document 1). Furthermore, in a laminated substrate having a metal circuit and a boron nitride sintered plate impregnated with semi-cured resin, direct contact between the primary particles constituting the boron nitride sintered plate and the metal circuit has also been considered to reduce the thermal resistance of the laminated substrate and improve heat dissipation (see, for example, Patent Document 2). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2014 / 196496 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-103611 Summary of the Invention [Problem to be solved by the invention]

[0006] Even when using the above-mentioned composite sheet, the shape of the metal plate to be laminated is made to fit within the area of ​​the main surface of the ceramic plate, in accordance with the manufacturing method of a laminated substrate obtained by bonding each component using a brazing material. In manufacturing a laminated substrate having an insulating layer and a metal circuit, if the metal circuit provided on the insulating plate can be integrally formed with terminals, etc. when bonding the insulating plate and the metal plate, it may be possible to suppress, for example, power loss at the connection interface between the metal circuit and the external terminal, and a manufacturing method of such a laminated substrate would be useful.

[0007] The present disclosure aims to provide a method for producing a laminated substrate having excellent adhesion between an insulating plate and a metal circuit, in which a metal circuit provided on an insulating plate and a protruding portion protruding outward from a main surface of the insulating plate are integrally formed. Another object of the present disclosure is to provide a laminated substrate having low insulation properties and low power loss in the circuit. Another object of the present disclosure is to provide a laminate suitable for producing such a laminated substrate, and a method for producing the same. [Means for solving the problem]

[0008] The present disclosure provides the following [1] to

[13] .

[0009] [1] stacking a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order; and heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to cure the semi-cured resin, thereby bonding the cured product of the semi-cured resin-impregnated plate to the metal plate and the conductive plate to obtain a laminate, A method for manufacturing a laminate, wherein the conductive plate has, when viewed from above, a portion that is located on the semi-cured resin-impregnated plate and a portion that is located outside the main surface of the semi-cured resin-impregnated plate. [2] The manufacturing method according to [1], wherein the length of the portion of the conductive plate that is outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more. [3] stacking a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order; heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to cure the semi-cured resin, thereby bonding the cured product of the semi-cured resin-impregnated plate to the metal plate and the conductive plate to obtain a laminate; forming a wiring pattern on the conductive plate of the laminate; A method for manufacturing a laminated substrate, wherein the conductive plate has, when viewed from above, a substrate portion that is present on the semi-cured resin-impregnated plate and a portion that is present outside the main surface of the semi-cured resin-impregnated plate. [4] The manufacturing method according to [3], wherein the length of the portion of the conductive plate that is outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more. [5] a metal plate, a resin-filled plate provided on the metal plate, and one or more conductive parts provided on the resin-filled plate; At least one of the one or more conductive parts is a first conductive part having, in top view, a substrate part present on the resin-filled plate and a protruding part protruding beyond a main surface of the resin-filled plate, A multilayer substrate, wherein the side surface of the first conductive portion is inclined with respect to the stacking direction. [6] The laminated substrate according to [5], wherein the warpage of the protrusion, which is the amount of displacement of the protrusion in the direction from the conductive portion toward the metal plate, is less than 0.50 mm. [7] The laminated substrate according to [5] or [6], wherein the thickness of the first conductive portion is 1.5 mm or less. [8] The laminated substrate according to any one of [5] to [7], wherein the length of the protrusion is 2.0 mm or more. [9] The laminated substrate according to any one of [5] to [8], wherein the inclination angle of the side surface of the first conductive portion is 35 to 85° with respect to the extending direction of the main surface of the resin-filled plate.

[10] The laminated substrate according to any one of [5] to [9], wherein the ratio of the thickness of the first conductive portion to the distance between the end of the protruding portion and the end of the resin-filled plate is less than 50.0.

[11] The laminated substrate according to any one of [5] to

[10] , wherein the minimum distance between the first conductive portion and a conductive portion adjacent to the first conductive portion is 2.0 mm or less.

[12] a metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided on the resin-filled plate, The conductive plate is a laminate having, in top view, a substrate portion located on the resin-filled plate and a protruding portion located outside the main surface of the resin-filled plate.

[13] The laminate according to

[12] , wherein the amount of warpage of the protruding portion in the direction from the conductive plate to the metal plate is less than 0.30 mm.

[14] The laminate according to

[12] or

[13] , wherein the length of the protruding portion is 2.0 mm or more. [Effects of the Invention]

[0010] According to the present disclosure, there is provided a method for producing a laminated substrate having excellent adhesion between an insulating plate and a metal circuit, in which a metal circuit provided on an insulating plate and a protruding portion protruding outward from a main surface of the insulating plate are integrally formed. According to the present disclosure, there is also provided a laminated substrate having low insulation properties and low power loss in the circuit. According to the present disclosure, there is also provided a laminate suitable for producing the above-mentioned laminated substrate, and a method for producing the same. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic diagram illustrating an example of a method for manufacturing a laminate and a laminate substrate. [Figure 2] FIG. 2 is a schematic diagram illustrating an example of a method for manufacturing a laminate and a laminated substrate. [Figure 3] FIG. 3 is an enlarged view of region R shown in FIG. 2(c). [Figure 4] FIG. 4 is a schematic diagram showing an example of a laminated substrate. [Figure 5] FIG. 5 is an end view taken along line VV shown in FIG. [Figure 6] FIG. 6 is a plan view schematically illustrating an example of a laminated substrate. [Figure 7] FIG. 7 is a schematic diagram for explaining the amount of warpage. [Figure 8] FIG. 8 is a schematic diagram showing a wiring pattern produced in the example. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings where appropriate. However, the following embodiments are merely examples for explaining the present disclosure and are not intended to limit the present disclosure to the following content. In the description, the same elements or elements having the same functions will be designated by the same reference numerals, and redundant explanations will be omitted where appropriate. Furthermore, unless otherwise specified, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios of each element are not limited to those shown in the drawings.

[0013] Unless otherwise specified, the materials exemplified in this specification can be used singly or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition means the total amount of the multiple substances present in the composition, unless otherwise specified.

[0014] The laminate according to the present disclosure can be suitably used to manufacture the laminate substrate according to the present disclosure. The laminate substrate according to the present disclosure may be used, for example, as a printed wiring board.

[0015] One embodiment of a method for manufacturing a laminate includes stacking a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order, and heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to harden the semi-cured resin, thereby bonding the cured product of the semi-cured resin-impregnated plate to the metal plate and the conductive plate to obtain a laminate. In this manufacturing method, when viewed from above, the conductive plate has a portion that is located on the semi-cured resin-impregnated plate and a portion that is located outside the main surface of the semi-cured resin-impregnated plate. A laminated substrate can also be manufactured by processing a wiring pattern on the laminate. That is, one embodiment of a method for manufacturing a laminated substrate further includes forming a wiring pattern on the conductive plate of the laminate. First, a method for manufacturing a laminate will be described.

[0016] In the method for manufacturing the laminate, the conductive plate is stacked so that a portion of the conductive plate protrudes outside the main surface of the semi-cured resin-impregnated plate when viewed from above. Furthermore, the use of the semi-cured resin-impregnated plate enables the laminate to be manufactured at a lower temperature than conventional solder connections. By adopting this configuration, a laminate can be obtained that can produce a laminate substrate in which a metal circuit provided on an insulating plate is integrally formed with a protruding portion protruding outward from the main surface of the insulating plate. Furthermore, by connecting the conductive plate at a relatively low temperature, thermal deformation of the conductive plate is suppressed even if the conductive plate has a protruding portion outside the main surface of the semi-cured resin-impregnated plate, and bending of the conductive plate in the resulting laminate can be suppressed.

[0017] 1 and 2 are schematic diagrams illustrating an example of a method for manufacturing a laminate and a laminated substrate. (a), (b), and (c) of FIG. 2 are schematic cross-sectional views corresponding to (a), (b), and (c) of FIG. 1, respectively. (a) of FIG. 1 shows a schematic diagram of an intermediate 100 in which a conductive plate 50 is further laminated on the semi-cured resin-impregnated plate 30 side of a laminate having a metal plate 20 and a semi-cured resin-impregnated plate 30 laminated on the metal plate 20. (b) of FIG. 1 shows a schematic diagram of a laminate 101 prepared by heat-treating the intermediate 100 to melt and further harden the semi-cured resin constituting the semi-cured resin-impregnated plate 30, the metal plate 20, the cured product of the semi-cured resin-impregnated plate 30 (resin-filled plate 40), and the conductive plate 50 in this order.

[0018] There are no particular limitations on the metal plate 20, as long as it is made of metal and has a plate-like shape. Examples of materials for the metal plate 20 include aluminum and copper. From the viewpoint of further improving wettability with the semi-cured resin, the material for the metal plate 20 preferably contains copper.

[0019] The shape of the main surface of the metal plate 20 is the same as the shape of the main surface of the semi-cured resin-impregnated plate 30 .

[0020] The thickness of the metal plate 20 may be, for example, 0.1 to 3.0 mm, 0.2 to 2.5 mm, or 0.3 to 2.0 mm. When the lower limit of the thickness of the metal plate 20 is within the above range, deformation of the metal plate 20 can be suppressed when manufacturing a laminate, and deformation can also be prevented during handling. When the upper limit of the thickness of the metal plate 20 is within the above range, it is possible to manufacture a small laminate while ensuring sufficient heat dissipation properties of the entire laminate.

[0021] The semi-cured resin-impregnated plate 30 includes a semi-cured resin portion made of semi-cured resin. The semi-cured resin may be a semi-cured product (B stage) of a resin composition containing a base agent and a curing agent. The semi-cured product is a product in which the curing reaction of the resin composition has partially progressed. The semi-cured product can be further cured by a subsequent curing treatment. Note that the cured product (C stage) of the resin composition described above means a product in which the curing reaction of the resin composition has fully progressed, and includes a completely cured state.

[0022] The semi-cured resin may contain a thermosetting resin produced by the reaction of a base agent and a curing agent in a resin composition. The semi-cured material may contain unreacted base agent and a curing agent in addition to the thermosetting resin as resin components. Whether the semi-cured resin portion contained in the semi-cured resin-impregnated plate 30 is a semi-cured material (B stage) before becoming a cured material (C stage) can be confirmed, for example, by a differential scanning calorimeter.

[0023] The upper limit of the cure rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 50% or less, 48% or less, 46% or less, or 42% or less. When the upper limit of the cure rate of the semi-cured resin is within the above range, the semi-cured resin melts appropriately when bonding the metal plate 20 and the conductive plate 50, allowing the molten resin to more thoroughly spread across the bonding interface, thereby achieving better adhesive properties. The lower limit of the cure rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 20% or more, 23% or more, or 25% or more. When the lower limit of the cure rate of the semi-cured resin is within the above range, excessive outflow of the molten semi-cured resin from the semi-cured resin-impregnated plate 30 is suppressed when the semi-cured resin-impregnated plate 30 is heated and bonded to the metal plate 20 and the conductive plate 50, thereby achieving a higher level of both the adhesiveness of the semi-cured resin-impregnated plate and the insulating properties of the resulting laminated substrate. The cure rate of the semi-cured resin may be adjusted within the above range, for example, 20 to 50%.

[0024] The cure rate of the semi-cured resin can be determined by measurement using a differential scanning calorimeter. First, the calorific value Q per unit mass generated when 2 mg of the uncured resin composition is completely cured is measured. Then, a 10 mg sample of the semi-cured resin is similarly heated from the semi-cured resin-impregnated plate 30 to determine the calorific value R per unit mass generated when the semi-cured resin is completely cured. The semi-cured resin content c (mass%) is determined by cross-sectional SEM image analysis and thermogravimetric differential thermal analysis (TG-DTA) of the semi-cured resin-impregnated plate 30 being measured, and the calorific value of the semi-cured resin is calculated from the determined semi-cured resin content and the calorific value R obtained by the above measurement. The cure rate of the semi-cured resin impregnated in the semi-cured resin-impregnated plate 30 can be determined by the end of heat generation in the heat generation curve obtained by differential scanning calorimetry. Cure rate of semi-cured resin (%) = {1 - [(R / c) × 100] / Q} × 100 ... Equation (1)

[0025] The semi-cured resin may include, for example, at least one selected from the group consisting of epoxy resin, cyanate resin, phenolic resin, melamine resin, urea resin, bismaleimide resin, thermosetting polyimide, maleimide resin, maleimide-modified resin, silicone resin, silicone rubber, unsaturated polyester, polyurethane, and alkyd resin.

[0026] The semi-cured resin-impregnated plate 30 may have, for example, a porous nitride sintered plate and semi-cured resin filled in the pores of the nitride sintered plate.

[0027] The nitride sintered body has nitride particles formed by sintering primary particles of nitride together and pores. The nitride may contain at least one nitride selected from the group consisting of boron nitride, aluminum nitride, and silicon nitride. Examples of nitride sintered plates include boron nitride sintered plates, aluminum nitride sintered plates, and silicon nitride sintered plates. The nitride sintered plate is preferably a boron nitride sintered plate because it is easier to form pores for resin filling and has excellent elastic modulus for long-term reliability.

[0028] The upper limit of the median pore diameter of the pores of the nitride sintered plate may be, for example, 4.0 μm or less, 3.8 μm or less, 3.6 μm or less, 3.4 μm or less, 3.2 μm or less, or 3.0 μm or less. Because the pore size of such a nitride sintered plate is small, the contact area between nitride particles is sufficiently large, thereby increasing the thermal conductivity. The lower limit of the median pore diameter of the pores of the nitride sintered plate may be, for example, 1.5 μm or more, 1.6 μm or more, 1.7 μm or more, 1.8 μm or more, 1.9 μm or more, or 2.0 μm or more. By setting the lower limit of the median pore diameter within the above range, the semi-cured resin can be more easily penetrated, and the amount of molten resin during the production of the laminate can be more sufficient. The median pore size of the pores in the nitride sintered plate may be adjusted within the above range, for example, 1.5 to 4.0 μm, or 2.0 to 3.0 μm.

[0029] The median pore diameter of the pores in a nitride sintered plate can be measured by the following procedure. First, the semi-cured resin-impregnated plate or resin-filled plate to be measured is heated to remove the semi-cured resin and the resin (cured resin). Then, using a mercury porosimeter, the nitride sintered plate is pressurized while increasing the pressure from 0.0042 MPa to 206.8 MPa, and the pore size distribution is determined. With the horizontal axis representing the pore diameter and the vertical axis representing the cumulative pore volume, the pore diameter at which the cumulative pore volume reaches 50% of the total pore volume is the median pore diameter. For example, a mercury porosimeter manufactured by Shimadzu Corporation can be used.

[0030] The upper limit of the porosity of the nitride sintered plate, i.e., the ratio of the volume of pores in the nitride sintered plate, may be, for example, 65 vol% or less, 60 vol% or less, or 58 vol% or less. When the upper limit of the porosity of the nitride sintered plate is within the above range, the decrease in mechanical strength of the nitride sintered plate can be more sufficiently suppressed, and a semi-cured resin-impregnated plate with better handleability can be provided. The lower limit of the porosity of the nitride sintered plate may be, for example, 40 vol% or more, 42 vol% or more, 44 vol% or more, or 45 vol% or more. When the upper limit of the porosity of the nitride sintered body is within the above range, the content of the semi-cured resin can be increased, and the adhesion to the metal plate and the conductive plate can be further improved. The porosity of the nitride sintered plate may be adjusted within the above range, for example, 40 to 65 vol% or 40 to 60 vol%.

[0031] The porosity of the nitride sintered plate was calculated from the volume and mass of the nitride sintered plate by calculating the bulk density [Y (kg / m 3 )] and compare this bulk density with the theoretical density of the nitride [X(kg / m 3 The theoretical density X of boron nitride is 2280 kg / m. 3 In the case of aluminum nitride, the theoretical density X is 3260 kg / m 3 In the case of silicon nitride, the theoretical density X is 3170 kg / m 3 is. Porosity (volume%) = [1-(Y / X)] x 100 ... Equation (2)

[0032] The thickness of the nitride sintered plate may be, for example, 5.0 mm or less, 3.0 mm or less, or 2.0 mm or less. The lower limit of the thickness of the nitride sintered plate may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.5 mm or more. The thickness of the nitride sintered plate is measured along a direction perpendicular to the main surface. If the thickness is not constant, the thickness is measured at 10 randomly selected locations, and the average value of the measurements should be within the above-mentioned range. The thickness of the semi-cured resin-impregnated plate and the thickness of the resin-filled plate correspond to the thickness of the nitride sintered plate.

[0033] The size of the main surface of the semi-cured resin-impregnated plate 30 is not particularly limited, and may be, for example, 50 mm. 2 Over 200mm 2 Over 500mm 2 Over 800mm 2 or more, or 1000mm 2 The size of the main surface of the semi-cured resin-impregnated plate 30 may be, for example, 250,000 mm 2 or less, or 150,000 mm 2 The sizes of the pair of main surfaces of the semi-cured resin-impregnated plate 30 are generally the same, but they do not need to be completely the same and may be different from each other.

[0034] 1, the shape of the main surface of the semi-cured resin-impregnated plate 30 is shown as a rectangle. However, the shape of the main surface of the semi-cured resin-impregnated plate 30 is not limited to this and may be, for example, a polygon other than a rectangle.

[0035] The conductive plate 50 is a member that will later become the metal circuit layer 60, and is made of a conductor. The material of the conductive plate 50 may be the same as or different from that of the metal plate 20. Examples of materials for the conductive plate 50 include aluminum and copper.

[0036] 1, the shape of the main surface of the conductive plate 50 is shown as a rectangle. However, the shape of the main surface of the conductive plate 50 is not limited to this and may be, for example, a polygon other than a rectangle, a circle, or a shape with a portion cut out.

[0037] The upper limit of the thickness of the conductive plate 50 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less. The lower limit of the thickness of the conductive plate 50 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more. The thickness of the conductive plate 50 is measured in a direction perpendicular to the main surface, and if the thickness is not constant, the thickness may be measured at 10 arbitrarily selected locations, and the average value of the measurements may be within the above-mentioned range.

[0038] Conventionally, when a component equivalent to the conductive plate 50 is stacked on a ceramic plate, the component is not stacked so that it protrudes beyond the main surface of the ceramic plate in order to avoid deformation of the component. In contrast, the manufacturing method of the laminate according to the present disclosure allows for greater freedom in the stacking position of the conductive plate 50. When viewed from above, the conductive plate 50 can be positioned so that it has a portion 50a that is located on the semi-cured resin-impregnated plate and a portion 50b that is located outside the main surface of the semi-cured resin-impregnated plate 30.

[0039] In the manufacturing method according to the present disclosure, the length L0 of the portion 50b of the conductive plate 50 that is outside the main surface of the semi-cured resin-impregnated plate 30 can be adjusted depending on the intended use of the laminate and the laminate substrate. The lower limit of the length L0 of the portion 50b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more. By setting the lower limit of the length L0 within the above range, greater flexibility in designing the protruding portion of the conductive portion of the resulting laminate substrate is possible, for example, the protruding portion can be used as a connection terminal for connecting to an external device. The upper limit of the length L0 may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less. Setting the upper limit of the length L0 within the above range further suppresses warpage in the conductive plate 50 and the metal circuit layer 60. The length L0 of the portion 50b may be adjusted within the above range, for example, 2.0 to 15.0 mm or 3.0 to 13.0 mm.

[0040] In this specification, the length L0 of the portion 50b of the conductive plate 50 existing outside the main surface of the semi-cured resin-impregnated plate 30 means the maximum distance between the end 30E of the semi-cured resin-impregnated plate 30 and the metal plate 20 and the end 50E of the portion 50b of the conductive plate 50 when the intermediate 100 having the metal plate 20, the semi-cured resin-impregnated plate 30, and the conductive plate 50 is observed from the metal plate 20 side. If the main surface of the semi-cured resin-impregnated plate 30 is rectangular and the conductive plate 50 has portions existing outside the main surface on both opposing sides of the main surface, the end 30E of the semi-cured resin-impregnated plate 30 is the end on the side where the end 50E of the conductive plate 50 exists, which is the target for measuring the length L0.

[0041] After the conductive plate 50 is arranged so that a portion thereof protrudes outside the main surface of the semi-cured resin-impregnated plate 30, the semi-cured resin-impregnated plate 30 is heated to melt the semi-cured resin, which is then cured.

[0042] The upper limit of the temperature for the heat treatment when melting and curing the semi-cured resin is 200°C or less, but may be, for example, 195°C or less, 190°C or less, or 180°C or less. By setting the upper limit of the temperature for the heat treatment within the above range, deformation of the conductive plate 50 in the resulting laminate can be more sufficiently suppressed, and warping of the conductive plate 50 and the metal circuit layer 60 can be more effectively suppressed. The lower limit of the temperature for the heat treatment can be, for example, 150°C or more, 160°C or more, or 170°C or more. By setting the lower limit of the temperature for the heat treatment within the above range, the semi-cured resin can be more sufficiently cured, and the adhesive strength between the resin-filled plate 40 and the metal plate 20 and the conductive plate 50 in the resulting laminate can be further improved. The temperature for the heat treatment can be adjusted within the above range, for example, 150 to 200°C or 160 to 195°C.

[0043] The heat treatment time for the semi-cured resin-impregnated plate 30 can be adjusted taking into account the curing rate of the semi-cured resin and the manufacturing time including other processes. The lower limit of the heat treatment time may be, for example, 2.0 hours or more, 2.5 hours or more, 3.0 hours or more, or 3.5 hours or more. By setting the lower limit of the time within the above range, the semi-cured resin can be sufficiently cured, thereby further improving the reliability of the resulting laminate and laminated substrate. The upper limit of the heat treatment time may be, for example, 6.0 hours or less, 5.5 hours or less, 5.0 hours or less, or 4.5 hours or less. Setting the upper limit of the time within the above range allows for more reliable curing of the semi-cured resin while preventing thermal degradation of the resin. The heat treatment time may be adjusted within the above range, for example, 2.0 to 6.0 hours or 2.5 to 5.5 hours.

[0044] The heat treatment of the semi-cured resin-impregnated plate 30 can also be performed by applying pressure in the stacking direction of the metal plate 20, the semi-cured resin-impregnated plate 30, and the conductive plate 50. In this case, the upper limit of the pressure may be, for example, 20.0 MPa or less, 17.5 MPa or less, 15.0 MPa or less, or 12.5 MPa or less. By keeping the upper limit of the pressure within the above range, the occurrence of cracks in the semi-cured resin-impregnated plate can be further suppressed and bonding can be performed with sufficient pressure. The lower limit of the pressure may be, for example, 1.0 MPa or more, 2.0 MPa or more, 3.0 MPa or more, or 4.0 MPa or more. By keeping the lower limit of the pressure within the above range, the adhesive strength between the resin-filled plate 40 and the metal plate 20 and the conductive plate 50 in the resulting laminate can be further improved.

[0045] In the above manufacturing method, in order to further prevent the conductive plate 50 from warping, a buffer material may be placed on the semi-cured resin-impregnated plate 30 side of the conductive plate 50, in the portion 50b outside the main surface of the semi-cured resin-impregnated plate 30, and the semi-cured resin may be melted and cured. The buffer material may have a thickness equal to or less than the total thickness of the semi-cured resin-impregnated plate 30 and the metal plate 20. A buffer material that does not deform when heated or pressurized and does not damage the metal circuit is preferred, and more preferably, a material that deforms when pressurized and reduces the pressure difference between the main surface and the protruding portion. For example, a metal plate, a gasket sheet, or the like may be used.

[0046] A laminate substrate can also be manufactured by forming a wiring pattern on the conductive plate of the laminate manufactured as described above. In the manufacturing method of a laminate substrate, a metal circuit layer 60 is formed by processing the wiring pattern on the conductive plate 50, as shown in Figures 1(c) and 2(c). By forming the metal circuit layer 60, a laminate substrate 102 is obtained.

[0047] The metal circuit layer 60 has one or more conductive parts provided on the resin-filled plate 40. At least one of the conductive parts is a first conductive part 52 having, in top view, a substrate part 52a present on the resin-filled plate 40 and a protruding part 52b protruding beyond the main surface of the resin-filled plate 40. The conductive part may also include a second conductive part 62 that is received within the main surface of the resin-filled plate 40.

[0048] As shown in FIG. 3 , the side surface of first conductive portion 52 in laminated substrate 102 is formed by the above-described processing and has an inclined surface that is inclined with respect to a direction perpendicular to the extension direction of the main surface of resin-filled plate 40. The inclination angle θ of the side surface of first conductive portion 52 with respect to the extension direction of the main surface of resin-filled plate 40 may be, for example, 85° or less, 84° or less, 83° or less, 82° or less, or 81° or less. The inclination angle θ of the side surface of first conductive portion 52 with respect to the extension direction of the main surface of resin-filled plate 40 may be, for example, 35° or more, 37° or more, 40° or more, 42° or more, or 45° or more. When the lower limit of the inclination angle θ is within the above range, a large area can be secured for the main surface of first conductive portion 52 opposite to resin-filled plate 40, and additional processing, etc., can be easily performed on the main surface. The inclination angle θ of the side surface of first conductive portion 52 may be adjusted within the above-mentioned range and may be, for example, 35 to 85° with respect to the extending direction of the main surface of resin-filled plate 40. The inclination angle can be controlled by adjusting the means for pattern formation (processing method and processing conditions), etc.

[0049] The inclination angle θ of the side surface of the first conductive portion 52 refers to the inclination angle measured by image analysis of an image of a cross section including the first conductive portion 52 as shown in Figure 3, for the end of the first conductive portion 52 that is located inside the main surface of the resin-filled plate 40.

[0050] The means for forming the wiring pattern on the conductive plate 50 may be, for example, etching. In the etching process, for example, a resist layer having a desired pattern is formed on the surface of the conductive plate 50. For example, a photosensitive resist or the like can be used as the resist material. When using a photosensitive resist, an organic layer containing a photosensitive resist material is provided on the conductive plate 50, and the resist layer having the desired pattern can be formed by exposing and developing the organic layer. The resist may be a negative resist or a positive resist.

[0051] After forming the resist layer, the portions of the conductive plate 50 where the resist layer is not provided are removed by etching, and then the resist layer is removed, thereby forming the metal circuit layer 60 having a wiring pattern made up of conductive portions including the first conductive portion 52. The shape of the wiring pattern is not particularly limited. The wiring pattern may be, for example, a fine pattern or the like, or may be a so-called solid pattern.

[0052] One embodiment of the laminate includes a metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided on the resin-filled plate, wherein the conductive plate has, in top view, a substrate portion located on the resin-filled plate and a portion located outside a main surface of the resin-filled plate.

[0053] The laminate is useful as an intermediate when preparing a laminated substrate. The laminate is an intermediate before a wiring pattern is formed, and the side surfaces of the conductive plates that constitute the laminate do not have inclined surfaces formed by etching or the like. A laminated substrate can also be prepared by forming a wiring pattern on the conductive plates that constitute the laminate.

[0054] One embodiment of the laminated substrate includes a metal plate, a resin-filled plate provided on the metal plate, and one or more conductive parts provided on the resin-filled plate. In the laminated substrate, at least one of the one or more conductive parts is a first conductive part having, in top view, a substrate part located on the resin-filled plate and a protruding part protruding beyond a main surface of the resin-filled plate, and a side surface of the first conductive part is inclined with respect to the stacking direction. The laminated substrate may not include a brazing material layer.

[0055] The laminated substrate has excellent insulating properties due to the resin-filled plate. Conventional laminated substrates require separate terminals to be attached by soldering or the like for connection to an external circuit. However, in such cases, power loss can occur due to the bonding interface between the conductive portion of the laminated substrate and the post-installed terminal. On the other hand, the laminated substrate according to the present disclosure has a conductive portion with a protruding portion that protrudes beyond the main surface of the resin-filled plate. The protruding portion itself can be used for connection to an external circuit. This can reduce power loss in connection with the external circuit.

[0056] FIG. 4 is a schematic diagram showing an example of a laminated substrate. FIG. 5 is an end view taken along line VV in FIG. 4. FIG. 6 is a plan view of the laminated substrate shown in FIG. 4. The laminated substrate 103 includes, in this order, a metal plate 20, a resin-filled plate 40, and a metal circuit layer 60. In the example shown in FIG. 4, the metal circuit layer 60 is composed of a first conductive portion 52 having a portion protruding outward from the main surface of the resin-filled plate 40 in a top view, and a second conductive portion 62 formed to fit within the main surface of the resin-filled plate 40 in a top view. The first conductive portion 52 includes a substrate portion 52a located on the resin-filled plate 40 and a protruding portion 52b protruding outward from the main surface of the resin-filled plate 40 in a top view.

[0057] The length L1 of the protrusion 52b of the first conductive portion 52 may be adjusted depending on the intended use of the laminate substrate. Such adjustment can be achieved, for example, by changing the length L0 of the protruding portion 50b of the conductive plate 50 that extends beyond the main surface of the resin-filled plate 40 in the laminate before the wiring pattern is formed, or by changing the length L0 of the portion of the conductive plate that extends beyond the main surface of the semi-cured resin-impregnated plate when preparing the laminate. The lower limit of the length L1 of the protrusion 52b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more. By setting the lower limit of the length L1 within the above range, a circuit with sufficient distance for connection to an external circuit can be easily incorporated into the next process. The upper limit of the length L1 of the protrusion 52b may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less. By setting the upper limit of the length L1 within the above range, it is possible to prevent the protrusion from peeling off, bending, etc. during handling while connecting to an external circuit. The length L1 of the protrusion 52b may be adjusted within the above range, and may be, for example, 2.0 to 15.0 mm, or 3.0 to 13.0 mm.

[0058] The length L1 of the protrusion 52b refers to the maximum distance between the end 40E of the resin-filled plate 40 and the metal plate 20 and the end 52E of the protrusion 52b of the first conductive portion 52 when the laminate substrate 102, which includes the metal plate 20, the resin-filled plate 40, and the metal circuit layer 60, is observed from the metal plate 20 side. The length L1 of the protrusion 52b can be measured by the same method as the length L0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30, which was described in the laminate manufacturing method according to the present disclosure. When there are multiple first conductive portions, the length of the protrusion 52b of each first conductive portion 52 is measured, and the arithmetic average value is taken as the length L1 of the protrusion 52b in the laminate substrate being measured.

[0059] The upper limit of the thickness T of the first conductive portion 52 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less. When the upper limit of the thickness T of the first conductive portion 52 is within the above range, the difference in thermal expansion with the resin-filled plate 40 is reduced, allowing for the manufacture of a more reliable laminated substrate. The lower limit of the thickness T of the first conductive portion 52 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more. When the lower limit of the thickness T of the first conductive portion 52 is within the above range, even when heat is generated on the upper surface of the first conductive portion 52, it can be more efficiently dissipated to the lower surface. The thickness T of the first conductive portion 52 may be adjusted within the above range and may be, for example, 0.1 to 1.5 mm.

[0060] The thickness of the first conductive part 52 is measured along a direction perpendicular to the main surface, and if the thickness is not constant, the thickness is measured at any 10 selected locations, and the average value should be within the above-mentioned range.

[0061] The upper limit of the ratio of the length L1 of the protrusion 52b to the thickness T of the first conductive part 52 (a value represented by L1 / T) may be, for example, 50.0 or less, or may be less than 50.0, 45.0 or less, 40.0 or less, 35.0 or less, or 30.0 or less. When the upper limit of the ratio is within the above range, the strength of the protrusion 52b is increased, and deformation during handling can be prevented. The lower limit of the ratio may be, for example, 5.0 or more, 7.5 or more, 10.0 or more, or 12.5 or more. When the lower limit of the ratio is within the above range, the protrusion 52b can be more easily formed, and the desired structure can be more simply produced. The ratio may be adjusted within the above range, for example, 5.0 to 50.0.

[0062] In the laminated substrate 103, the amount of warpage of the first conductive portion 52 in the stacking direction is kept small. The upper limit of the amount of warpage, which is the amount of bending of the protruding portion 52b in the direction from the first conductive portion 52 toward the metal plate 20, may be, for example, less than 0.50 mm, less than 0.40 mm, less than 0.30 mm, 0.25 mm or less, 0.20 mm or less, 0.18 mm or less, or 0.16 mm or less. When the upper limit of the amount of warpage is within the above range, peeling in each layer of the laminated substrate is further suppressed, thereby further improving reliability. The lower limit of the amount of warpage of the first conductive portion 52 in the stacking direction is not particularly limited, but may be, for example, 0.05 mm or more, 0.08 mm or more, or 0.10 mm or more. The amount of warpage of the first conductive part 52 in the stacking direction may be adjusted within the above-mentioned range, for example, 0.05 mm or more and less than 0.50 mm, 0.05 mm or more and less than 0.30 mm, or 0.05 to 0.25 mm.

[0063] The amount of warpage, which is the amount of deflection of the protruding portion 52b of the first conductive portion 52 in the direction from the first conductive portion 52 to the metal plate 20, refers to a value measured by the following method. Specifically, a sample is first set on the stage of a one-shot 3D shape measuring machine, the position (reference position) of the main surface of the first conductive portion 52 is measured, and the position of the main surface of the protruding portion 52b of the same first conductive portion 52 as the reference position is measured. Thereafter, the difference between the two positions is calculated and used as the amount of deflection F in the direction from the first conductive portion 52 to the metal plate 20. The position of the main surface of the protruding portion 52b is defined as the end of the protruding portion 52b (the point at which the distance from the end of the resin-filled plate 40 is greatest). The amount of deflection may be measured based on either of the two main surfaces of the first conductive portion 52. FIG. 7 is a schematic diagram illustrating measurement of the amount of warpage, which is the amount of deflection. 7 shows an example in which the reference position is the main surface of first conductive part 52 on the side opposite to resin-filled plate 40. As the one-shot 3D shape measuring instrument, for example, "VR-3000" (product name) manufactured by Keyence Corporation can be used.

[0064] When two or more conductive portions are present on the resin-filled plate, the minimum distance between the first conductive portion 52 and the conductive portion adjacent to the first conductive portion 52 can also be adjusted. The adjacent conductive portion may be either the first conductive portion or the second conductive portion 62. The minimum distance between the first conductive portion 52 and the conductive portion adjacent to the first conductive portion 52 may be, for example, 2.0 mm or less, 1.8 mm or less, 1.5 mm or less, 1.2 mm or less, or 1.0 mm or less. When the minimum distance is within the above range, circuits with more complex patterns can be formed, allowing for the fabrication of more sophisticated laminated substrates. The minimum distance between the first conductive portion 52 and the conductive portion adjacent to the first conductive portion 52 may be, for example, 0.3 mm or more, 0.5 mm or more, 0.7 mm or more, or 0.8 mm or more. When the minimum distance is within the above range, discharge between circuits can be prevented during insulation testing. The distance between the first conductive portion 52 and the conductive portion adjacent to the first conductive portion 52 may be adjusted so that the minimum value is within the above range, and the minimum value may be, for example, 0.3 to 2.0 mm.

[0065] Although several embodiments have been described above, the present disclosure is not limited to the above embodiments. Furthermore, the descriptions of the above embodiments can be applied to each other. [Example]

[0066] The present disclosure will be described in more detail below using examples and comparative examples, but the present disclosure is not limited to the following examples.

[0067] Example 1 [Production of nitride sintered plates] 100 parts by mass of orthoboric acid manufactured by Nippon Denko Corporation and 35 parts by mass of acetylene black (product name: HS100) manufactured by Denka Co., Ltd. were mixed using a Henschel mixer. The resulting mixture was loaded into a graphite crucible and heated in an arc furnace in an argon atmosphere at 2200°C for 5 hours to obtain lumped boron carbide (BC). The resulting lumps were coarsely crushed using a jaw crusher to obtain coarse powder. This coarse powder was further crushed using a ball mill equipped with silicon carbide balls (φ10 mm) to obtain a crushed powder.

[0068] The prepared pulverized powder was placed in a boron nitride crucible and heated in a resistance heating furnace under nitrogen gas atmosphere at 2000°C and 0.85 MPa for 10 hours, yielding a fired material containing boron carbonitride (B4CN4).

[0069] A sintering aid was prepared by blending powdered boric acid and calcium carbonate. 50.0 parts by mass of calcium carbonate was blended with 100 parts by mass of boric acid. 20 parts by mass of the sintering aid was blended with 100 parts by mass of the fired product, and the mixture was mixed using a Henschel mixer to prepare a powdered blend.

[0070] The mixture was pressed at 150 MPa for 30 seconds using a powder press to obtain a sheet-like molded product (length x width x thickness = 50 mm x 50 mm x 0.35 mm). Three molded plates were prepared in the same manner.

[0071] Next, 30 parts by mass of amorphous boron nitride (manufactured by Denka Co., Ltd., product name: GP) was dispersed in a release agent slurry consisting of a mixture of 60 parts by weight of terpineol, 30 parts by weight of toluene, and 10 parts by weight of polyisobutyl methacrylate to prepare a slurry. The obtained slurry was applied to one main surface of the molded plate by a doctor blade method to form a coating film (boron nitride-containing layer) with a thickness of 0.03 mm. The molded plates with the coating film formed thereon were stacked one on top of the other with the coating film interposed between them.

[0072] The three stacked molded plates were placed in a boron nitride container and introduced into a batch-type high-frequency furnace. In the batch-type high-frequency furnace, they were heated for 5 hours under conditions of atmospheric pressure, a nitrogen flow rate of 5 L / min, and 2000°C (sintering process). After that, a laminate consisting of alternating layers of boron nitride sintered plates (sintered bodies) and release layers was removed from the boron nitride container. The boron nitride sintered plates that made up the laminate were peeled off using a thickness gauge leaf, yielding three fired plates with the release layer remaining on the surface. The fired plates had a thickness of 0.40 mm.

[0073] <Median pore diameter measurement> The pore volume distribution of the obtained boron nitride sintered plate was measured using a mercury porosimeter (Autopore IV9500) manufactured by Shimadzu Corporation while increasing the pressure from 0.0042 MPa to 206.8 MPa, and the median pore diameter was determined. The median pore diameter of the boron nitride sintered plate was 2.6 μm.

[0074] <Porosity measurement> The porosity of the obtained boron nitride sintered plate was determined. First, the bulk density [Y (kg / m 3 )] and compare this bulk density with the theoretical density of the nitride [X(kg / m 3 The porosity of the boron nitride sintered body was 52% by volume. The theoretical density X of the boron nitride sintered plate was 2280 kg / m 3 was used. Porosity (volume%) = [1-(Y / X)] × 100 (2)

[0075] [Preparation of semi-cured resin-impregnated board] 80 parts by weight of a compound containing a cyanate group, 20 parts by weight of a compound containing a bismaleimide group, and 50 parts by weight of a compound containing an epoxy group were weighed into a container. 1 part by weight of a phosphine-based curing agent and 0.01 part by weight of an imidazole-based curing agent were added to a total of 100 parts by weight of the three compounds, and mixed. Because the epoxy resin was in a solid state at room temperature, it was heated to approximately 80°C before mixing. The viscosity of the resulting thermosetting resin composition at 100°C was 10 mPa·s. After heating the prepared thermosetting resin composition to 100°C, it was dripped onto the upper main surface of a boron nitride sintered plate using a dispenser while maintaining that temperature, thereby impregnating the plate with the thermosetting resin composition. The amount of thermosetting resin composition dripped was 1.5 times the total volume of the pores in the boron nitride sintered plate. Some of the thermosetting resin composition did not impregnate the boron nitride sintered plate and remained on the main surface.

[0076] The following compounds were used to prepare the thermosetting resin composition.

[0077] Compound having a cyanate group: dimethylmethylenebis(1,4-phenylene)biscyanate (manufactured by Mitsubishi Gas Chemical Company, Inc., trade name: TA-CN) Compound having a bismaleimide group: N,N'-[(1-methylethylidene)bis[(p-phenylene)oxy(p-phenylene)]]bismaleimide (manufactured by K.I. Chemicals Co., Ltd., trade name: BMI-80) Compound having an epoxy group: 1,6-bis(2,3-epoxypropan-1-yloxy)naphthalene (manufactured by DIC Corporation, trade name: HP-4032D)

[0078] Phosphine-based curing agent: tetraphenylphosphonium tetra-p-tolylborate (manufactured by Kagaku Co., Ltd., product name: TPP-MK) Imidazole curing agent: 1-(1-cyanomethyl)-2-ethyl-4-methyl-1H-imidazole (manufactured by Shikoku Chemicals Corporation, trade name: 2E4MZ-CN)

[0079] Under atmospheric pressure, the resin composition remaining on the upper main surface of the boron nitride sintered plate was smoothed using a stainless steel scraper (manufactured by Narby Co., Ltd.) Excess resin composition was removed, and a semi-cured resin-impregnated plate with a smooth main surface was obtained.

[0080] <Measurement of the cure rate of semi-cured resin> The cure rate of the semi-cured resin was determined by measurement using a differential scanning calorimeter. First, the amount of heat Q generated per unit mass when 2 mg of the uncured resin composition was completely cured was measured. Then, a 10 mg sample of the semi-cured resin taken from the semi-cured resin-impregnated plate was similarly heated to determine the amount of heat R generated per unit mass when completely cured. Assuming that the semi-cured material contains a thermosetting component (c mass%), the cure rate of the semi-cured resin impregnated in the semi-cured resin-impregnated plate was calculated using the following formula (1). The cure rate of the semi-cured resin was 32%. Cure rate of semi-cured resin (%) = {1 - [(R / c) × 100] / Q} × 100 ... Equation (1)

[0081] [Laminate manufacturing] A copper foil (50mm x 50mm x 0.5mm) was laminated on one main surface of the semi-cured resin-impregnated plate (length x width x thickness = 50mm x 50mm x 0.40mm) so that the four corners were aligned, and a copper foil (50mm x 54mm x 0.5mm) was laminated on the other main surface as a conductive plate, offset so that the length L0 of the portion outside the main surface of the semi-cured resin-impregnated plate was 4.0mm. The laminate was heated and pressed at 150°C and 5MPa for 5 minutes, and then heated at 200°C and atmospheric pressure for 2 hours to obtain a laminate. During the heating and pressing, a gasket sheet (Kitaco Co., Ltd., thickness: 0.8mm) was placed as a buffer under the portion outside the main surface of the semi-cured resin-impregnated plate and pressed. The gasket sheet was protected by attaching polyimide tape (manufactured by 3M, thickness: 0.05 mm) to both main surfaces.

[0082] [Laminated substrate manufacturing] An organic layer containing a photosensitive resist material was formed on the main surface of the resulting laminate facing the conductive plate, followed by exposure and development to form a resist layer. After forming the resist layer, the conductive plate was etched to remove the portions where the resist layer was not formed, and then the resist layer was removed to form a metal circuit layer having a wiring pattern composed of conductive portions including the first conductive portion. The wiring pattern had the shape shown in Figure 7.

[0083] [Evaluation of the shape of laminated substrates] The resulting laminated substrate was measured for the inclination angle of the side surface of the first conductive portion, the amount of warpage of the first conductive portion, the thickness of the first conductive portion, the distance between the end of the first conductive portion and the end of the resin-filled plate, the ratio of the thickness of the first conductive portion to the distance between the end of the first conductive portion and the resin-filled plate, and the distance between the first conductive portion and an adjacent conductive portion. The results are shown in Table 1.

[0084] [Insulation evaluation of laminated substrates] The resulting laminated substrate was evaluated for breakdown voltage in the first conductive part 52 using an ultra-high voltage withstand voltage tester (manufactured by Keisoku Giken Kenkyusho Co., Ltd.) and a measurement jig (manufactured by Onishi Electronics Co., Ltd.). From the measurement results, the adhesiveness was evaluated according to the following criteria. The results are shown in Table 1. A: The breakdown voltage is 10kV or more. B: The breakdown voltage is 7 kV or more and less than 10 kV. C: The breakdown voltage was less than 7 kV, or continuity occurred between circuit layers due to creeping discharge.

[0085] [Evaluation of power loss in multilayer substrates] The power loss between the conductive parts of the obtained laminated substrate was measured. Referring to FIG. 8, the magnitude of the power loss was determined by measuring the power in a section starting from a point 1 mm from the end of the protruding part of one of the first conductive parts 52 and ending at a point 1 mm from the end of the protruding part of the other first conductive part 52 when transmitting power between the two first conductive parts 52. Wire bonding was performed using copper wire between the first conductive parts 52. Evaluation was performed as a relative evaluation, with the power loss in Example 1 being set to 1. Based on the measurement results, the power loss was evaluated according to the following criteria. The results are shown in Table 1. A: The relative value of the power loss is less than 1.0. B: The relative value of the power loss is 1.0 or more and less than 1.5. C: The relative value of power loss is 1.5 or more.

[0086] [Adhesion evaluation of laminated substrates] The resulting laminated substrate was evaluated using an ultrasonic flaw detector (Hitachi Power Solutions Co., Ltd., product name: Fine SAT V) to assess the degree of adhesion between the insulating resin-filled plate and the metal circuit layer provided on the main surface of the resin-filled plate, based on the area ratio of the adhesive portion to the area of ​​the main surface of the resin-filled plate. From the measurement results, the adhesiveness was evaluated according to the following criteria. The results are shown in Table 1. The adhesive portion refers to the region where, during measurement with the ultrasonic flaw detector, the reflected wave intensity is 20% to 50% of the intensity of the ultrasonic wave reflected when there is an air layer at the interface. A: The area ratio of the bonded portion is 90% or more. B: The area ratio of the bonded portion is less than 90%.

[0087] Example 2 A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive portion were changed as shown in Table 1. The inclination angle of the side surface of the first conductive portion in the obtained laminate substrate and other characteristics were measured in the same manner as in Example 1. In addition, the performance of the obtained laminate substrate was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[0088] Example 3 A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that the heating temperature during laminate production, the length L0 of the portion of the conductive plate outside the main surface of the semi-cured resin-impregnated plate, and the thickness T of the first conductive portion were changed as shown in Table 1. The inclination angle of the side surface of the first conductive portion in the obtained laminate substrate and other characteristics were measured in the same manner as in Example 1. In addition, the performance of the obtained laminate substrate was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[0089] Example 4 A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive portion were changed as shown in Table 1. The inclination angle of the side surface of the first conductive portion in the obtained laminate substrate and other characteristics were measured in the same manner as in Example 1. In addition, the performance of the obtained laminate substrate was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[0090] Example 5 A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that no buffer material was used in the production of the laminate. The inclination angle of the side surface of the first conductive portion in the obtained laminate substrate was measured in the same manner as in Example 1. In addition, the performance of the obtained laminate substrate was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[0091] (Comparative Example 1) A laminate and a laminated substrate were prepared in the same manner as in Example 1, except that a silicon nitride sintered plate was used instead of the semi-cured resin-impregnated plate, the length L0 of the portion of the conductive plate outside the main surface of the semi-cured resin-impregnated plate was changed as shown in Table 1, the conductive plate and the silicon nitride sintered plate were fixed from above and below with jigs during joining, a brazing filler metal was applied between the conductive plate and the silicon nitride sintered plate, and the plates were joined by heating to 790°C. The inclination angle of the side surface of the first conductive portion in the obtained laminated substrate and other characteristics were measured in the same manner as in Example 1. The performance of the obtained laminated substrate was also evaluated in the same manner as in Example 1. The results are shown in Table 1.

[0092] (Comparative Example 2) A laminate and a laminate substrate were prepared in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive portion were changed. The inclination angle of the side surface of the first conductive portion in the obtained laminate substrate was measured in the same manner as in Example 1. The performance of the obtained laminate substrate was also evaluated in the same manner as in Example 1. The power loss measurement was performed after joining a Cu plate with solder so that a distance of 4.0 mm was provided outside the main surface of the resin-filled plate. The results are shown in Table 1.

[0093] [Table 1]

[0094] As shown in Table 1, it was confirmed that the laminate obtained by satisfying the claimed configuration as in Examples 1 to 4 can achieve both excellent insulation and suppression of power loss in the circuit. As shown in Example 4, it was confirmed that even when the protrusion is long and the circuit path is long, the power loss is suppressed to a level sufficient for practical use. [Industrial Applicability]

[0095] According to the present disclosure, there is provided a method for producing a laminated substrate having excellent adhesion between an insulating plate and a metal circuit, in which a metal circuit provided on an insulating plate and a protruding portion protruding outward from a main surface of the insulating plate are integrally formed. According to the present disclosure, there is also provided a laminated substrate having low insulation properties and low power loss in the circuit. According to the present disclosure, there is also provided a laminate suitable for producing the above-mentioned laminated substrate, and a method for producing the same. [Explanation of symbols]

[0096] 20...metal plate, 30...semi-cured resin-impregnated plate, 40...resin-filled plate, 50...conductive plate, 52...first conductive part, 60...metal circuit layer, 62...second conductive part, 100...intermediate body, 101...laminated body, 102, 103...laminated substrate.

Claims

1. stacking a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order; and heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to cure the semi-cured resin, thereby bonding the cured product of the semi-cured resin-impregnated plate to the metal plate and the conductive plate to obtain a laminate, A method for manufacturing a laminate, wherein the conductive plate has, when viewed from above, a portion that is located on the semi-cured resin-impregnated plate and a portion that is located outside the main surface of the semi-cured resin-impregnated plate.

2. The manufacturing method according to claim 1 , wherein the length of the portion of the conductive plate that is outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.

3. stacking a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order; heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to cure the semi-cured resin, thereby bonding the cured product of the semi-cured resin-impregnated plate to the metal plate and the conductive plate to obtain a laminate; forming a wiring pattern on the conductive plate of the laminate; A method for manufacturing a laminated substrate, wherein the conductive plate has, when viewed from above, a substrate portion that is present on the semi-cured resin-impregnated plate and a portion that is present outside the main surface of the semi-cured resin-impregnated plate.

4. The manufacturing method according to claim 3 , wherein the length of the portion of the conductive plate that is outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.

5. a metal plate, a resin-filled plate provided on the metal plate, and one or more conductive portions provided on the resin-filled plate; At least one of the one or more conductive portions is a first conductive portion having, in top view, a substrate portion present on the resin-filled plate and a protruding portion protruding beyond a main surface of the resin-filled plate, A laminated substrate, wherein a side surface of the first conductive portion is inclined with respect to a lamination direction.

6. The laminated substrate according to claim 5 , wherein the amount of warpage of the protrusion, which is the amount of deflection of the protrusion in a direction from the first conductive portion toward the metal plate, is less than 0.50 mm.

7. The laminated substrate according to claim 5 or 6, wherein the first conductive portion has a thickness of 1.5 mm or less.

8. The laminated substrate according to claim 5 or 6, wherein the length of the protrusion is 2.0 mm or more.

9. 7. The laminated substrate according to claim 5, wherein the inclination angle of the side surface of the first conductive portion is 35 to 85 degrees with respect to the extending direction of the main surface of the resin-filled plate.

10. The laminated substrate according to claim 5 or 6, wherein a ratio of the length of the protrusion to the thickness of the first conductive portion is less than 50.

0.

11. The laminated substrate according to claim 5 , wherein the minimum distance between the first conductive portion and a conductive portion adjacent to the first conductive portion is 2.0 mm or less.

12. a metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided on the resin-filled plate, The conductive plate is a laminate having, in top view, a substrate portion located on the resin-filled plate and a protruding portion located outside the main surface of the resin-filled plate.

13. The laminate according to claim 12 , wherein the amount of warpage of the protruding portion in a direction from the conductive plate toward the metal plate is less than 0.30 mm.

14. The laminate according to claim 12 or 13, wherein the length of the protruding portion is 2.0 mm or more.

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