Device and method for cmp temperature control

Abstract

To provide a chemical machine polishing system capable of promptly and efficiently reducing a temperature of a polishing pad, improving uniformity of pad asperity, improving uniformity of polishing, and capable of prolonging life of the pad.SOLUTION: A chemical machine polishing system includes: a platen supporting a polishing pad including a polishing surface; a conduit including an inlet connected to a gas source; and a dispenser connected to the conduit and including a tapered divergent nozzle that is suspended over the platen so as to orient gas from a gas source onto the polishing surface of the polishing pad.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE This disclosure relates to chemical mechanical polishing (CMP), and more particularly to temperature control during chemical mechanical polishing. [Background technology]

[0002] Integrated circuits are typically formed on a substrate by sequentially depositing conductive, semiconductive, or insulating layers on a semiconductor wafer. Various manufacturing processes require planarization of layers on the substrate. For example, one manufacturing step involves depositing a filler layer over a non-planar surface and then planarizing the filler layer. For certain applications, the filler layer is planarized until the top surface of a patterned layer is exposed. For example, a metal layer can be deposited on a patterned insulating layer to fill the trenches and holes in the insulating layer. After planarization, the remaining metal within the trenches and holes in the patterned layer forms vias, plugs, and lines that provide conductive paths between thin-film circuits on the substrate. As another example, a dielectric layer can be deposited on a patterned conductive layer and then planarized to allow for subsequent photolithography steps.

[0003] Chemical mechanical polishing (CMP) is one accepted planarization method. This planarization method typically requires the substrate to be mounted on a carrier head. The exposed surface of the substrate is typically placed against a rotating polishing pad. The carrier head provides a controllable load on the substrate, pressing it against the polishing pad. A polishing slurry containing abrasive particles is typically supplied to the surface of the polishing pad. Summary of the Invention

[0004] In one aspect, a chemical mechanical polishing system includes a platen supporting a polishing pad having a polishing surface, a conduit having an inlet coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended above the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

[0005] Implementations of any of the above aspects may include one or more of the following features.

[0006] The gas may be air, nitrogen, carbon dioxide, argon, evaporated ethanol, and / or evaporated isopropyl alcohol.

[0007] A controller may be coupled to the gas source and configured to cause the gas source to deliver gas through the converging-diverging nozzle onto the polishing surface during selected steps of the polishing operation. The controller may be coupled to the gas source to deliver gas into the converging-diverging nozzle at a rate of between 0 and 1000 liters per minute.

[0008] The injector may have an inlet coupled to a liquid source and an outlet for delivering liquid from the liquid source into the converging-diverging nozzle. The liquid may be water, ethanol, and / or isopropyl alcohol. A controller may be coupled to the liquid source and configured to cause the liquid source to deliver liquid into the converging-diverging nozzle during selected steps of the polishing operation. The controller coupled to the liquid source may be configured to deliver the liquid into the converging-diverging nozzle at a rate of 0 to 300 milliliters per minute. The controller coupled to the gas source may be configured to regulate the flow rate of gas through the converging-diverging nozzle such that the gas is cooled sufficiently to freeze the liquid.

[0009] A controller coupled to the gas source may be configured to regulate the flow rate of gas through the converging-diverging nozzle such that the coolant gas is cooled from an initial temperature greater than 20°C to less than 20°C. The controller may be configured to regulate the flow rate of gas through the converging-diverging nozzle such that the coolant gas is cooled to less than 0°C. The controller may be configured to regulate the flow rate of gas through the converging-diverging nozzle such that the coolant gas is cooled to between -70 and -50°C.

[0010] In another aspect, a method for controlling temperature in a chemical mechanical polishing system includes delivering gas from a gas source to a converging-diverging nozzle, cooling the gas by flowing the gas through the converging-diverging nozzle, and directing the cooled gas onto a polishing pad.

[0011] Implementations of any of the above aspects may include one or more of the following features.

[0012] The gas may be formed by cooling air, by evaporation of liquid nitrogen, by evaporation of liquid ethanol, by evaporation of liquid isopropyl alcohol, and / or by sublimation of dry ice.

[0013] The gas may enter the convergent-divergent nozzle at a flow rate of 0 to 1000 liters per minute.

[0014] A liquid may be injected into the converging-diverging nozzle. The liquid may be water, ethanol, and / or isopropyl alcohol. The liquid may be injected into the converging-diverging nozzle at a flow rate of 0 to 300 milliliters per minute. The liquid may be frozen into solid particles by exposing it to a chilled gas.

[0015] The gas may be cooled from an initial temperature greater than 20° C. to less than 20° C. The cooled gas may be dispensed onto the polishing pad at a temperature less than 0° C. The cooled gas may be dispensed onto the polishing pad at a temperature of −70 to −50° C.

[0016] One or more of the following possible advantages may be realized:

[0017] The temperature of the polishing pad can be controlled quickly and efficiently. The temperature of the polishing pad can be controlled without contacting the polishing pad with a solid, for example, a heat exchange plate, thereby reducing the risk of pad contamination and defects. The temperature variation across the polishing operation can be reduced, which can improve the polishing predictability of the polishing process. The temperature variation from polishing operation to polishing operation can be reduced, which can improve wafer-to-wafer uniformity and improve the repeatability of the polishing process. The temperature variation across the substrate can be reduced, which can improve within-wafer uniformity.

[0018] In particular, the temperature of the polishing pad can be reduced quickly and efficiently. For example, the temperature of the polishing pad surface can be reduced during one or more of the metal removal step, over-polishing step, or conditioning step of the polishing operation. This can reduce dishing and erosion and / or improve the uniformity of the pad asperities, thereby improving polishing uniformity and extending the pad life.

[0019] The details of one or more implementations are set forth in the accompanying drawings and the description below. Other aspects, features, and advantages will be apparent from the description and drawings, and from the claims. [Brief explanation of the drawings]

[0020] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an example of a polishing apparatus. [Figure 2] FIG. 1 is a schematic top view showing an example of a chemical mechanical polishing apparatus. [Figure 3] FIG. 3 is a schematic cross-sectional view showing the example nozzle of FIGS. 1 and 2. DETAILED DESCRIPTION OF THE INVENTION

[0021] Chemical mechanical polishing works by combining mechanical polishing and chemical etching at the interface between the substrate, polishing fluid, and polishing pad. During the polishing process, friction between the substrate surface and the polishing pad generates a significant amount of heat. In addition, some processes also include an in-situ pad conditioning step, in which a conditioning disk, e.g., a disk coated with abrasive diamond particles, is pressed against the rotating polishing pad to condition and texture the polishing pad surface. The polishing conditioning process can also generate heat. For example, in a typical copper CMP process with a nominal downforce pressure of 2 psi and a removal rate of 8000 Å / min, the surface temperature of a polyurethane polishing pad can increase by approximately 30°C.

[0022] Chemical variables in the CMP process, such as the onset and rate of the reactions involved, and mechanical variables, such as the surface friction coefficient and viscoelasticity of the polishing pad, are both highly dependent on temperature. As a result, variations in the surface temperature of the polishing pad can lead to changes in removal rate, polishing uniformity, erosion, dishing, and residue. By tighter control of the surface temperature of the polishing pad during polishing, temperature variations can be reduced, and polishing performance, such as measured by wafer-to-wafer non-uniformity or wafer-to-wafer non-uniformity, can be improved.

[0023] A technique that can address these challenges is to have a nozzle that directs coolant gas onto the polishing pad through a convergent-divergent (CD) nozzle. Suspended water droplets can be added to the CD nozzle. The water can be cooled to form ice droplets that effectively cool the polishing pad due to the latent heat of fusion of the ice droplets.

[0024] 1 and 2 show an example of a polishing station 20 of a chemical mechanical polishing system. The polishing station 20 includes a rotatable, disk-shaped platen 24 on which a polishing pad 30 rests. The platen 24 is operable to rotate about an axis 25 (see arrow A in FIG. 2). For example, a motor 22 can rotate a drive shaft 28 to rotate the platen 24. The polishing pad 30 can be a two-layer polishing pad having an outer polishing layer 34 and a softer backing layer 32.

[0025] The polishing station 20 may include a supply port, for example, at the end of a slurry supply arm 39, for dispensing a polishing liquid 38, such as a polishing slurry, onto the polishing pad 30. The polishing station 20 may include a pad conditioner device 91 having a conditioning disk 92 (see FIG. 2) to maintain the surface roughness of the polishing pad 30. The conditioning disk 92 may be positioned at the end of an arm 94 that may be rotated to sweep the disk 92 radially across the polishing pad 30 (see arrow B in FIG. 2).

[0026] Carrier head 70 is operable to hold substrate 10 against polishing pad 30. Carrier head 70 is suspended from a support structure 72, e.g., a carousel or track, and is connected by a drive shaft 74 to a carrier head rotation motor 76 so that the carrier head can rotate about axis 71 (see arrow C in FIG. 2 ). Optionally, carrier head 70 can be oscillated laterally (see arrow D in FIG. 2 ), for example on a carousel slider, by translation along the track or by rotational oscillation of the carousel itself.

[0027] Carrier head 70 may include a retaining ring 84 that holds the substrate. In some implementations, retaining ring 84 may include a lower plastic portion 86 that contacts the polishing pad and an upper portion 88 of a harder material.

[0028] In operation, the platen is rotated about its central axis 25 and the carrier head is rotated about its central axis 71 and translated laterally across the upper surface of the polishing pad 30 .

[0029] Carrier head 70 may include a flexible membrane 80 having a substrate mounting surface that contacts the backside of substrate 10, and a plurality of pressurizable chambers 82 that apply different pressures to different areas, e.g., different radial areas, on substrate 10. The carrier head may also include a retaining ring 84 that holds the substrate.

[0030] In some implementations, the polishing station 20 includes a temperature sensor 64 that monitors the temperature of the polishing station or components of the polishing station / within the polishing station, such as the temperature of the polishing pad and / or the slurry thereon. For example, the temperature sensor 64 may be an infrared (IR) sensor, such as an IR camera, positioned above the polishing pad 30 and configured to measure the temperature of the polishing pad 30 and / or the slurry 38 thereon. In particular, the temperature sensor 64 is configured to measure the temperature at multiple points along the radius of the polishing pad 30 to generate a radial temperature profile. For example, the IR camera may have a field of view spanning the radius of the polishing pad 30.

[0031] In some implementations, the temperature sensor is a contact sensor rather than a non-contact sensor. For example, the temperature sensor 64 can be a thermocouple or an IR thermometer positioned on or in the platen 24. Additionally, the temperature sensor 64 can be in direct contact with the polishing pad.

[0032] In some implementations, multiple temperature sensors can be spaced at different radial locations across the polishing pad 30 to provide the temperature at multiple points along the radius of the polishing pad 30. This technique can be used instead of or in addition to an IR camera.

[0033] 1 is positioned to monitor the temperature of the polishing pad 30 and / or the slurry 38 on the pad 30, the temperature sensor 64 can be positioned inside the carrier head 70 to measure the temperature of the substrate 10. The temperature sensor 64 can be in direct contact with the semiconductor wafer of the substrate 10 (i.e., a contact sensor). In some implementations, multiple temperature sensors are included in the polishing station 22, for example, to measure the temperature of different components of / within the polishing station.

[0034] The polishing system 20 also includes a temperature control system 100 that controls the temperature of the polishing pad 30 and / or the slurry 38 on the polishing pad. The temperature control system 100 may include a cooling system 102 and / or a heating system 104. At least one of the cooling system 102 and the heating system 104, and in some implementations both, operate by delivering a temperature-controlled medium, such as a liquid, water vapor, or mist, onto the polishing surface 36 of the polishing pad 30 (or onto a polishing liquid already on the polishing pad).

[0035] For the heating system 104, the heating medium can be a gas, such as steam or heated air, or a liquid, such as heated water, or a combination of gas and liquid. The medium is at a temperature higher than room temperature, for example, 40-120°C, for example, 90-110°C. The medium can be water, such as substantially pure deionized water, or water containing additives or chemicals. In some implementations, the heating system 104 uses a mist of steam. The steam can contain additives or chemicals.

[0036] The heating medium can be delivered by flowing through apertures, such as holes or slots, provided by, for example, one or more nozzles on the heating delivery arm, which apertures can be provided by a manifold connected to a heating medium source.

[0037] An example heating system 104 includes an arm 140 that extends over the platen 24 and polishing pad 30 from the edge of the polishing pad to the center of the polishing pad 30, or at least near the center (e.g., within 5% of the total radius of the polishing pad). The arm 140 can be supported by a base 142, which can be supported on the same frame 40 as the platen 24. The base 142 can include one or more actuators, such as a linear actuator that raises and lowers the arm 140 and / or a rotary actuator that rotates the arm 140 laterally over the platen 24. The arm 140 is positioned to avoid collisions with other hardware components, such as the polishing head 70, the pad conditioning disk 92, and the slurry distribution arm 39.

[0038] Along the rotation direction of the platen 24, the arm 140 of the heating system 104 can be positioned between the arm 110 of the cooling system 110 and the carrier head 70. Along the rotation direction of the platen 24, the arm 140 of the heating system 104 can be positioned between the arm 110 of the cooling system 110 and the slurry delivery arm 39. For example, the arm 110 of the cooling system 110, the arm 140 of the heating system 104, the slurry delivery arm 39, and the carrier head 70 can be positioned in that order along the rotation direction of the platen 24.

[0039] A plurality of openings 144 are formed in the bottom surface of the arm 140. Each opening 144 is configured to direct gas or water vapor, e.g., steam, onto the polishing pad 30. The arm 140 can be supported by a base 142 such that the openings 144 are separated from the polishing pad 30 by a gap. The gap can be 0.5 to 5 mm. In particular, the gap can be selected so that heat from the heated fluid does not significantly dissipate before it reaches the polishing pad. For example, the gap can be selected so that steam emitted from the openings does not condense before it reaches the polishing pad.

[0040] The heating system 104 can include a steam source 146, which can be connected to the arm 140 by piping. Each opening 144 can be configured to direct steam toward the polishing pad 30.

[0041] In some implementations, process parameters, such as flow rate, pressure, temperature, and / or liquid-to-gas mixture ratio, can be independently controlled for each nozzle. For example, the fluid for each opening 144 can be routed through an independently controllable heater to independently control the temperature of the heated fluid, e.g., the temperature of the vapor.

[0042] The various openings 144 can direct the vapor onto different radial zones on the polishing pad 30. Adjacent radial zones may overlap. Optionally, some of the openings 144 can be oriented so that the central axis of the mist from that opening is at an oblique angle to the polishing surface 36. The vapor can be directed from one or more of the openings 144 to have a horizontal component in a direction opposite to the direction of motion of the polishing pad 30 in the region of impingement, such as caused by rotation of the platen 24.

[0043] While FIG. 2 shows the openings 144 spaced evenly apart, this is not a requirement. The nozzles 120 can be distributed non-uniformly, radially, angularly, or both. For example, the openings 144 can be more closely packed toward the center of the polishing pad 30. As another example, the openings 144 can be more closely packed at a radius corresponding to the radius at which the polishing liquid 39 is delivered to the polishing pad 30 by the slurry delivery arm 39. Additionally, while FIG. 2 shows nine openings, there can be more or fewer openings.

[0044] The polishing system 20 may also include a high-pressure rinse system 106. The high-pressure rinse system 106 includes a plurality of nozzles 154, e.g., 3-20 nozzles, that direct a cleaning fluid, e.g., water, onto the polishing pad 30 at high intensity to clean the pad 30 and remove used slurry, polishing debris, etc.

[0045] 2 , an example rinsing system 106 includes an arm 150 that extends over the platen 24 and polishing pad 30 from the edge of the polishing pad to the center of the polishing pad 30, or at least near the center (e.g., within 5% of the total radius of the polishing pad). The arm 150 can be supported by a base 152, which can be supported on the same frame 40 as the platen 24. The base 152 can include one or more actuators, such as a linear actuator that raises and lowers the arm 150 and / or a rotary actuator that rotates the arm 150 laterally over the platen 24. The arm 150 is positioned to avoid collisions with other hardware components, such as the polishing head 70, the pad conditioning disk 92, and the slurry dispensing arm 39.

[0046] The arm 150 of the rinsing system 106 can be positioned between the arm 110 of the cooling system 110 and the arm 140 of the heating system 140 along the rotational direction of the platen 24. For example, the arm 110 of the cooling system 110, the arm 150 of the rinsing system 106, the arm 140 of the heating system 104, the slurry delivery arm 39, and the carrier head 70 can be positioned in that order along the rotational direction of the platen 24. Alternatively, the arm 110 of the cooling system 104 can be positioned between the arm 150 of the rinsing system 106 and the arm 140 of the heating system 140 along the rotational direction of the platen 24. For example, the arm 150 of the rinsing system 106, the arm 110 of the cooling system 110, the arm 140 of the heating system 104, the slurry delivery arm 39, and the carrier head 70 can be positioned in that order along the rotational direction of the platen 24.

[0047] A plurality of nozzles 154 are suspended from the arm 150. Each nozzle 150 is configured to spray a cleaning liquid at high pressure onto the polishing pad 30. The arm 150 can be supported by a base 152 such that the nozzles 120 are separated from the polishing pad 30 by a gap. The rinsing system 106 can include a cleaning fluid source 156, which can be connected to the arm 150 by piping.

[0048] The various nozzles 154 can spray onto different radial zones on the polishing pad 30. Adjacent radial zones may overlap. In some implementations, the nozzles 154 are oriented so that the areas where the cleaning liquid impinges on the polishing pad do not overlap. For example, at least some of the nozzles 154 can be positioned and oriented so that the impingement areas are angularly separated.

[0049] At least some of the nozzles 154 can be oriented so that the central axis of the mist from that nozzle is at an oblique angle to the polishing surface 36. In particular, the cleaning fluid can be sprayed from each nozzle 154 with a horizontal component directed radially outward (toward the edge of the polishing pad). This can cause the cleaning fluid to leave the pad 30 more quickly and result in a thinner region of fluid remaining on the polishing pad 30. This can be thermal coupling of a heating and / or cooling medium to the polishing pad 30.

[0050] 2 shows the nozzles 154 spaced evenly apart, this is not a requirement. Additionally, while FIGS. 1 and 2 show nine nozzles, there can be more or fewer nozzles, for example, between 3 and 20 nozzles.

[0051] In some implementations, the polishing system 20 includes a wiper blade or body 170 that distributes the polishing liquid 38 evenly across the polishing pad 30. Along the direction of rotation of the platen 24, the wiper blade 170 can be between the slurry delivery arm 39 and the carrier head 70.

[0052] While FIG. 2 shows separate arms for each subsystem, e.g., heating system 102, cooling system 104, and rinsing system 106, the various subsystems can be included in a single assembly supported by a common arm. For example, the assembly can include a cooling module, a rinsing module, a heating module, a slurry delivery module, and optionally a wiper module. Each module can include a body, e.g., an arc-shaped body, that can be secured to a common mounting plate, which can be secured at the end of the arm such that the assembly is positioned above the polishing pad 30. Various fluid delivery components, e.g., piping, passages, etc., can extend within each body. In some implementations, the modules can be separately separable from the mounting plate. Each module can have similar components that perform the functions of the arms of the associated system described above.

[0053] For the cooling system 102, the cooling medium can be a gas, such as air, and / or a liquid, such as water. If present, the gaseous component of the cooling medium can be air or another gas inert to the polishing process, such as nitrogen, carbon dioxide, argon, or another noble gas, or a mixture thereof. If present, the liquid component of the cooling medium can be water or another liquid, such as ethanol, isopropyl alcohol, or a mixture thereof. The liquid component can be inert to the polishing process. The medium can be at room temperature or chilled to below room temperature, i.e., below 20°C. For example, the medium can be between 5 and 15°C. In some implementations, the medium is below 0°C.

[0054] In some implementations, the medium is a substantially pure gas. In some implementations, the cooling medium is a mist of gas and liquid, for example, an aerosolized mist of liquid, such as water, in a gas carrier, such as air. In some implementations, the cooling system can have a nozzle that generates an aerosolized mist of water cooled to below room temperature.

[0055] In some implementations, the coolant medium includes particles of a solid material mixed with a gas and / or a liquid. The solid material can be a chilled material, such as ice, dry ice, or frozen ethanol or isopropyl alcohol. In some implementations, the coolant medium is a gas, such as air mist, and solid particles, such as ice particles, but has substantially no liquid phase. The solid material can also be a material that absorbs heat by a chemical reaction when dissolved in water.

[0056] The cooling medium can be delivered in the coolant delivery arm by flowing through one or more apertures, such as holes or slots, optionally formed in the nozzle, which can be provided by a manifold connected to a coolant source.

[0057] 1 and 2 , an example cooling system 102 includes an arm 110 that extends over the platen 24 and polishing pad 30 from the edge of the polishing pad to the center of the polishing pad 30, or at least near the center (e.g., within 5% of the total radius of the polishing pad). The arm 110 can be supported by a base 112, which can be supported on the same frame 40 as the platen 24. The base 112 can include one or more actuators, such as a linear actuator that raises and lowers the arm 110 and / or a rotary actuator that rotates the arm 110 laterally over the platen 24. The arm 110 is positioned to avoid collisions with other hardware components, such as the polishing head 70, the pad conditioning disk 92, and the slurry dispenser 39.

[0058] The exemplary cooling system 102 includes a plurality of nozzles 120 suspended from an arm 110. Each nozzle 120 is configured to spray a liquid cooling medium, such as water, onto the polishing pad 30. The arm 110 can be supported by a base 112 such that the nozzles 120 are separated from the polishing pad 30 by a gap 126.

[0059] Each nozzle 120 can be configured, for example, using the controller 12, to start and stop fluid flow through it. Each nozzle 120 can be configured to direct aerosolized water in a mist 122 toward the polishing pad 30. The cooling system 102 can include a liquid coolant source 130 and a gas coolant source 132 (see FIG. 2). The liquid from the medium source 130 and the gas from the medium source 132 can be mixed in a mixing chamber 134 (see FIG. 1), for example, in or on the arm 110, before being directed through the nozzles 120 to form the mist 122.

[0060] In some implementations, process parameters such as flow rate, pressure, temperature, and / or liquid-to-gas mixture ratio can be controlled independently for each nozzle (e.g., by controller 12). For example, the coolant for each nozzle 120 can be routed through an independently controllable chiller to independently control the temperature of the mist. As another example, a separate pair of pumps, one for gas and one for liquid, can be connected to each nozzle to independently control the flow rate, pressure, and gas-to-liquid mixture ratio for each nozzle.

[0061] The various nozzles can spray onto different radial regions 124 on the polishing pad 30. Adjacent radial regions 124 may overlap. In some implementations, the nozzles 120 generate mist that impinges on the polishing pad 30 along an elongated region 128. For example, the nozzles can be configured to generate mist in a generally flat, triangular-shaped volume.

[0062] One or more of the elongated regions 128, for example all of the elongated regions 128, can have a longitudinal axis that is parallel to a radius extending through the region 128 (see region 128a). Alternatively, the nozzle 120 generates a cone-shaped mist.

[0063] 1 shows the mist itself overlapping, the nozzles 120 can be oriented so that the elongated regions do not overlap. For example, at least some of the nozzles 120, e.g., all of the nozzles 120, can be oriented so that the elongated region 128 is at an oblique angle to a radius through the elongated region (see region 128b).

[0064] At least some of the nozzles 120 can be oriented so that the central axis of the mist (see arrow A) from that nozzle is at an oblique angle to the polishing surface 36. In particular, the mist 122 can be directed from the nozzles 120 so that it has a horizontal component in a direction opposite to the direction of motion of the polishing pad 30 (see arrow A) in the region of impingement caused by the rotation of the platen 24.

[0065] 1 and 2 show the nozzles 120 spaced at uniform intervals, this is not a requirement. The nozzles 120 can be distributed non-uniformly, radially, angularly, or both. For example, the nozzles 120 can be packed more closely together radially toward the edge of the polishing pad 30. Additionally, while FIGS. 1 and 2 show nine nozzles, there can be more or fewer nozzles, for example, between 3 and 20 nozzles.

[0066] The cooling system 102 can be used to reduce the temperature of the polishing surface 36. For example, the temperature of the polishing surface 36 can be reduced using liquid from the liquid coolant 130 via the mist 122 and / or gas from the gas coolant 132 via the mist 122. In some embodiments, the temperature of the polishing surface 36 can be reduced to 20° C. or less. By reducing the temperature during one or more of the metal removal or over-polishing steps, the selectivity of the polishing fluid 38 can be reduced, thereby reducing dishing and erosion of soft metals during CMP.

[0067] Reducing the temperature during CMP can be used to reduce corrosion. For example, by reducing the temperature during one or more of the metal removal step, over-polishing step, or conditioning step, galvanic corrosion of various components can be reduced, as galvanic reactions can be temperature-dependent. In addition, inert gases can be used in the polishing process during CMP. In particular, oxygen-free (or less oxygen than atmospheric) gases can be used to create a localized inert environment, reducing oxygen within the localized inert environment and thereby reducing corrosion. Examples of such gases include nitrogen and carbon dioxide, for example, evaporated from liquid nitrogen or dry ice.

[0068] Reducing the temperature of the polishing surface 36, for example, during a conditioning step, can increase the storage modulus of the polishing pad 30 and reduce the viscoelasticity of the polishing pad 30. The increased storage modulus and reduced viscoelasticity, combined with a reduced downforce on the pad conditioning disk 92 and / or less aggressive conditioning by the pad conditioning disk 92, can result in more uniform pad asperity. The benefits of uniform pad asperity include reduced scratching of the substrate 10 during subsequent polishing operations and increased life of the polishing pad 30.

[0069] Referring to FIG. 3 , each nozzle 120 can be a convergent-divergent (CD) nozzle. A convergent-divergent (CD) nozzle can also be described as a Laval nozzle or a supersonic nozzle. Each nozzle 120 has a convergent section 202 (e.g., an input port) through which gas (e.g., gas from a gas source 132) enters the nozzle 120 at subsonic speed. A pump 222 can direct the gas from the gas source 132 through a dispenser 220 and into the CD nozzle 120. For example, the gas entering the convergent section 202 can be at room temperature, e.g., 20-30° C., or below room temperature, and can enter at a rate of 0-1000 liters per minute per nozzle, e.g., 500 liters per minute per nozzle. From the convergent section 202, the gas enters a choke point, or throat 204, where the cross-sectional area of ​​the nozzle 120 is smallest. The velocity of the gas increases as it flows from the convergent section 202 through the throat 204 to the divergent section 206 (e.g., output port). The throat 204 increases the velocity of the gas flowing through it, so that the velocity of the gas increases to supersonic speeds as the gas enters and exits the divergent section 206. For example, the gas exiting the divergent section 206 can be at a temperature below room temperature, such as between −100°C and 20°C, between −90°C and 0°C, between −80°C and −25°C, or between −70°C and −50°C.

[0070] Gases used in cooling system 102 can include, for example, air, nitrogen, carbon dioxide, argon, or evaporated gases such as vaporized ethanol or isopropyl alcohol. The gas can be cooled even before being delivered to CD nozzle 120. For example, the cooled gas can be cryogenic air (e.g., chilled by passing through a heat exchanger), cryogenic nitrogen gas (e.g., by evaporation from liquid nitrogen), or cryogenic carbon dioxide gas (e.g., by sublimation of dry ice).

[0071] The CD nozzle 120 can be used to cool the polishing pad 30. For example, the divergent section 206 can distribute cooled gas directly onto the polishing pad 30. For example, the outlet from the divergent section 206 can be positioned approximately 1-10 cm from the polishing surface 36, and the nozzle 120 can be oriented so that the gas stream impinges on the polishing surface.

[0072] In some implementations, the liquid coolant medium source 130 can deliver a liquid, such as water, through a dispenser 210. The dispenser 210 can be an injector positioned to inject water into the gas flowing through the nozzle 120. For example, the injector 210 can be positioned to inject droplets of water into the convergent section 202, into the throat 204 (as shown in FIG. 3), into the divergent section 206, or immediately after the divergent section 206.

[0073] The flow rate of the liquid coolant into the gas stream, e.g., into the nozzle 120, can be controlled by a valve 212. The dispenser 210 can dispense the water droplets 208 at a rate of, e.g., 0-300 milliliters per minute, e.g., 3-50 milliliters per minute. The liquid flow rate can be approximately 0.001%-1%, e.g., 0.01-0.1%, of the gas flow rate. As the gas flows through the CD nozzle 120, the gas can cool the water droplets 208 because the gas flowing through the CD nozzle 120 cools. In some implementations, the water droplets 208 cool to form ice droplets. The ice droplets can be uniform in size, e.g., approximately 10 μm in diameter.

[0074] In some implementations, the water droplets 208 can also be dispensed directly onto the polishing pad 30 to further cool the polishing pad 30 together with the cooled gas. Additionally, the ice or water droplets can prevent the polishing pad 30 from drying out when cooled by the cooled gas. In some implementations, the cooled gas can freeze the water droplets 208 to form ice droplets, which can cool the polishing pad 30 together with the cooled gas. The ice droplets can efficiently cool the polishing pad 30 because the ice droplets can cool the polishing pad 30 by absorbing heat and melting into water, thereby cooling the polishing pad 30 through the latent heat of fusion. Furthermore, the ice droplets can be used to polish and clean the polishing pad 30.

[0075] The above-described polishing apparatus and method can be applied in various polishing systems. Either the polishing pad or the carrier head, or both, can move to provide relative motion between the polishing surface and the substrate. For example, the platen can orbit rather than rotate. The polishing pad can be a circular (or some other shape) pad fixed to the platen. The polishing layer can be a standard abrasive material (e.g., polyurethane with or without a filter), a soft material, or a fixed-abrasive material.

[0076] The term relative positioning is used to refer to relative positioning within the system or substrate, and it should be understood that the polishing surface and substrate can be held in a vertical orientation or some other orientation during the polishing operation.

[0077] The polishing system 20 may also include a controller 90 that controls the operation of various components, such as the temperature control system 100. The controller 90 is configured to receive temperature measurements for each radial zone of the polishing pad from the temperature sensors 64. The controller 90 may compare the measured temperature profile with a desired temperature profile and generate a feedback signal to a control mechanism (e.g., actuator, power supply, pump, valve, etc.) for each nozzle or opening. The feedback signal is calculated by the controller 90, for example, based on an internal feedback algorithm, to cause the control mechanism to adjust the amount of cooling or heating so that the polishing pad and / or slurry reaches (or at least approaches) the desired temperature profile.

[0078] The functional operations of the controller 90 may be implemented using one or more computer program products, i.e., one or more computer programs tangibly embodied in a non-transitory computer-readable storage medium, that are executed by or control the operation of a data processing device (e.g., a programmable processor, a computer, or multiple processors or computers).

[0079] Having described a number of embodiments of the present invention, it will nevertheless be understood that various modifications may be made without departing from the spirit and scope of the invention.

[0080] For example, while the above description focuses on delivering a heating and / or cooling medium onto the polishing pad, the heating and / or cooling medium can be delivered onto other components to control their temperatures. For example, the heating and / or cooling medium can be sprayed onto the substrate while the substrate is positioned in the transfer station, for example, in the load cup. As another example, the load cup itself can be sprayed with the heating and / or cooling medium. As yet another example, the conditioning disk can be sprayed with the heating and / or cooling medium.

[0081] Accordingly, other embodiments are within the scope of the following claims.

Claims

1. a platen supporting a polishing pad having a polishing surface; a conduit having an inlet coupled to a gas source; a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended above the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

2. 2. The system of claim 1, further comprising: a controller coupled to the gas source and configured to cause the gas source to deliver the gas through the converging-diverging nozzle onto the polishing surface during selected steps of a polishing operation.

3. The system of claim 1 further comprising an injector having an inlet coupled to a liquid source and an outlet for delivering liquid from the liquid source into the converging-diverging nozzle.

4. 4. The system of claim 3, comprising a controller coupled to the liquid source and configured to cause the liquid source to deliver liquid into the converging-diverging nozzle during selected steps of a polishing operation.

5. 5. The system of claim 4, wherein the controller is coupled to the gas source and configured to flow the gas through the converging-diverging nozzle at a rate such that the gas is cooled sufficiently to freeze the liquid.

6. 10. The system of claim 1, comprising a controller coupled to the gas source and configured to regulate a flow rate of gas through the converging-diverging nozzle such that the coolant gas is cooled from an initial temperature greater than 20°C to less than 20°C.

7. The system of claim 6 , wherein the controller is configured to flow gas through the converging-diverging nozzle at a rate such that the coolant gas is cooled to below 0° C.

8. delivering gas from a gas source to a converging-diverging nozzle; cooling the gas by flowing the gas through the convergent-divergent nozzle; directing the cooled gas onto a polishing pad; A method for controlling the temperature of a chemical mechanical polishing system, comprising:

9. 9. The method of claim 8, wherein the gas is formed by cooling air, by evaporation of liquid nitrogen, by evaporation of liquid ethanol, by evaporation of liquid isopropyl alcohol, and / or by sublimation of dry ice.

10. The method of claim 8, comprising injecting a liquid into the converging-diverging nozzle.

11. The method of claim 10, wherein the liquid is water, ethanol, and / or isopropyl alcohol.

12. 11. The method of claim 10, further comprising freezing the liquid into solid particles by exposing it to the cooled gas.

13. 9. The method of claim 8, comprising cooling the gas from an initial temperature greater than 20°C to less than 20°C.

14. 14. The method of claim 13, comprising dispensing the cooled gas onto the polishing pad at a temperature below 0°C.

15. 15. The method of claim 14, comprising dispensing the cooled gas onto the polishing pad at a temperature of from -70 to -50°C.

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