Light-emitting device

Abstract

To provide a light-emitting device that reduces stray light.SOLUTION: A light-emitting element includes a plurality of light-emitting elements (20, 20a) arranged on a first upper surface of a first substrate (10), a second substrate on which the first substrate is arranged, wires (40) electrically connecting a first wiring portion (12) and a second wiring portion (32), a first damming structure (50) arranged on the first upper surface of the first substrate, and a light-blocking insulating member (60) arranged outside the first damming structure and covering the wires, the first wiring portion, and the second wiring portion, the insulating member having an inner end portion that reaches the first damming structure, and in a cross section passing through the first substrate, the outermost light-emitting element among the plurality of light-emitting elements, the first damming structure, and the insulating member, a first distance A between a line passing through the inner end portion and perpendicular to the first upper surface and a line passing through the outer end portion of the outer light-emitting element and a second distance B in the height direction between the top of the insulating member and the first upper surface of the first substrate satisfies the following formula (1). 0.1×B≤A≤B (1).SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a light emitting device. [Background technology]

[0002] Patent Document 1 discloses a light emitting device having a submount substrate, one or more light emitting elements mounted on the submount substrate, bonding wires connecting a circuit pattern on the submount substrate to electrodes of the light emitting elements, and a protective resin arranged around the bonding wires to enclose the bonding wires. In the light emitting device, if a light-shielding insulating member is arranged as the protective resin, light from the light emitting elements may be reflected by the insulating member, resulting in the emission of stray light. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-212301 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure aims to provide a light emitting device that reduces stray light. [Means for solving the problem]

[0005] A light emitting device according to an embodiment of the present disclosure includes a first substrate having a first upper surface, a plurality of light emitting elements arranged on the first upper surface of the first substrate, a second substrate having a second upper surface on which the first substrate is arranged, a first wiring portion arranged on the first upper surface of the first substrate outside the plurality of light emitting elements, and a second wiring portion arranged on the second upper surface of the second substrate, a wire electrically connecting the first wiring portion and the second wiring portion, a first damming structure arranged on the first upper surface of the first substrate and surrounding the plurality of light emitting elements in a top view, and a second damming structure arranged on the outside of the first damming structure in a top view and electrically connecting the wire, the first wiring portion, and the second wiring portion. and a light-shielding insulating member that covers the wiring portion and the second wiring portion, the insulating member having an inner end that reaches the first damming structure, wherein, in a cross section passing through at least the first substrate, the outermost light-emitting element of the plurality of light-emitting elements, the first damming structure, and the insulating member, when a first distance A is defined as the distance between a line perpendicular to the first upper surface that passes through the inner end and a line perpendicular to the first upper surface that passes through the outer end of the outer light-emitting element, and a second distance B is defined as the distance in the height direction between the top of the insulating member and the first upper surface of the first substrate, the first distance A and the second distance B satisfy the following formula (1). 0.1 × B ≦ A ≦ B (1) [Effects of the Invention]

[0006] According to one embodiment of the present disclosure, a light emitting device that reduces stray light can be provided. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 2 is a top view schematically showing the top surface of the light emitting device according to the embodiment. [Figure 2] 2 is a partial cross-sectional view schematically illustrating a cross section of a part of the light emitting device according to the embodiment, taken along line II-II in FIG. 1. FIG. [Figure 3] 10 is a graph showing the emission intensity distribution outside the outer end of the light-emitting element for Experimental Examples 4 to 8 and Comparative Example 1. [Figure 4]10 is a graph showing the relationship between the first distance and the relative luminous intensity of light in the increased region. [Figure 5] 10 is a graph showing the relationship between the third distance and the relative luminous intensity of light in the increased region. [Figure 6] 3 is a partial cross-sectional view schematically illustrating a part of a cross section cut along the YZ plane, for explaining a manufacturing method of a light emitting device according to an embodiment. FIG. [Figure 7] 3 is a partial cross-sectional view schematically illustrating a part of a cross section cut along the YZ plane, for explaining a manufacturing method of a light emitting device according to an embodiment. FIG. [Figure 8] 3 is a partial cross-sectional view schematically illustrating a part of a cross section cut along the YZ plane, for explaining a manufacturing method of a light emitting device according to an embodiment. FIG. [Figure 9] 3 is a partial cross-sectional view schematically illustrating a part of a cross section cut along the YZ plane, for explaining a manufacturing method of a light emitting device according to an embodiment. FIG. [Figure 10] 3 is a partial cross-sectional view schematically illustrating a part of a cross section cut along the YZ plane, for explaining a manufacturing method of a light emitting device according to an embodiment. FIG. [Figure 11] FIG. 10 is a top view schematically showing the top surface of a light emitting device according to a first modified example of the embodiment. [Figure 12] 12 is a partial cross-sectional view schematically illustrating a cross section of a part of a light emitting device according to Modification 1 of the embodiment, taken along line XII-XII shown in FIG. [Figure 13] FIG. 10 is a top view schematically showing the top surface of a light emitting device according to a second modified example of the embodiment. [Figure 14] 14 is a partial cross-sectional view schematically illustrating a cross section of a part of a light emitting device according to Modification 2 of the embodiment, taken along line XIV-XIV shown in FIG. 13. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Light-emitting devices according to embodiments of the present disclosure will be described in detail below with reference to the drawings. However, the following embodiments are merely illustrative of light-emitting devices that embody the technical concepts of the embodiments and are not limited thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are merely illustrative examples and are not intended to limit the scope of the present disclosure. Note that the size, positional relationship, etc. of components shown in each drawing may be exaggerated for clarity. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed descriptions will be omitted as appropriate. An end view showing only the cut surface may be used as a cross-sectional view.

[0009] In the figures shown below, directions may be indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are mutually perpendicular. The direction of the arrow along the X-axis is referred to as the +X direction or +X side, and the direction opposite the +X direction is referred to as the -X direction or -X side. The direction of the arrow along the Y-axis is referred to as the +Y direction or +Y side, and the direction opposite the +Y direction is referred to as the -Y direction or -Y side. The direction of the arrow along the Z-axis is referred to as the +Z direction or +Z side, and the direction opposite the +Z direction is referred to as the -Z direction or -Z side. The Z-axis corresponds to the "height direction" of the light-emitting device. Furthermore, in the terms of embodiments, a top view refers to viewing an object from the +Z direction or +Z side. In this specification, in addition to portions that can be directly viewed from above, portions that cannot be directly viewed from above may also be described as being seen through the light. However, these do not limit the orientation of the light-emitting device during use, and the orientation of the light-emitting device is arbitrary. In the embodiments, the surface of an object when viewed in the +Z direction or from the +Z side is referred to as the "top surface," and the surface of an object when viewed in the -Z direction or from the -Z side is referred to as the "bottom surface." In the embodiments described below, "along the X-axis, Y-axis, and Z-axis" includes an object having a tilt within a range of ±10° relative to these axes. In the embodiments, "orthogonal" may include an error of ±10° relative to 90°.

[0010] Furthermore, in this disclosure, unless otherwise specified, polygons such as rectangles may be referred to as polygons, including shapes in which the corners of the polygon have been processed, such as by rounding, chamfering, corner removal, or rounding. Shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle portions of the sides may also be referred to as polygons. In other words, shapes in which partial processing has been applied while retaining the polygon as a base are included in the interpretation of "polygon" described in this disclosure.

[0011] The same applies to terms that represent specific shapes, such as trapezoids, circles, and irregularities, as well as polygons. The same also applies to terms that refer to the sides that form the shape. In other words, even if the corners or middle part of a side are processed, the processed part is included in the interpretation of "side."

[0012] Furthermore, "cover" or "enclose" is not limited to direct contact, but also includes indirect covering, for example, via another member. Furthermore, "place" is not limited to direct contact, but also includes indirect placement, for example, via another member.

[0013] [Embodiment] <Overall Configuration of Light-Emitting Device 1> An example of the configuration of a light emitting device 1 according to an embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a top view schematically illustrating the upper surface of the light emitting device 1 according to the embodiment. FIG. 2 is a partial cross-sectional view schematically illustrating a cross section of a portion of the light emitting device 1 according to the embodiment, taken along line II-II in FIG. 1. The cross section of the light emitting device 1 shown in FIG. 2 is an example of a cross section (hereinafter, sometimes referred to as "a cross section") passing through the first substrate, the outermost light emitting element among the plurality of light emitting elements, the first damming structure, and the insulating member. That is, in the description with reference to FIG. 2, matters described as "in a cross section" can be rephrased as matters corresponding to "in a cross section." The first substrate, the outermost light emitting element among the plurality of light emitting elements, the first damming structure, and the insulating member of the light emitting device 1 will be described later.

[0014] 1 and 2, the light emitting device 1 includes a first substrate 10, a plurality of light emitting elements 20, a second substrate 30, a wire 40, a first damming structure 50, and a light-shielding insulating member 60. The light-shielding insulating member 60 will be referred to hereinafter as the "insulating member 60." The light emitting device 1 may further include other components such as a phosphor layer 26, a light-shielding member 28, and a second damming structure 55. In FIG. 1, the first substrate 10, the plurality of light emitting elements 20, the wire 40, a portion of the first damming structure 50, and a portion of the second damming structure 55 are shown in perspective.

[0015] <First substrate 10> The first substrate 10 has a first upper surface 10a, a lower surface, and a side surface connecting the first upper surface 10a and the lower surface. As shown in FIG. 1, the first substrate 10 has a substantially rectangular outer shape when viewed from above. However, the first substrate 10 may have other outer shapes, such as a substantially circular, elliptical, or polygonal shape when viewed from above. The first substrate 10 may include an integrated circuit for controlling the light-emitting operation of each of the plurality of light-emitting elements 20. An example of the integrated circuit is an electronic circuit such as an ASIC (Application Specific Integrated Circuit).

[0016] The first substrate 10 has a first base material 11 and a first wiring section 12. The first wiring section 12 is arranged outside the plurality of light-emitting elements 20 in a top view. The first substrate 10 may further have other wiring, such as inner layer wiring arranged inside the first base material 11 and upper surface wiring arranged in a region of the first upper surface 10a that overlaps with the light-emitting elements 20 in a top view. The first wiring section 12 and the light-emitting elements 20 may be electrically connected via the inner layer wiring and the upper surface wiring.

[0017] The first base material 11 is the base material of the first substrate 10. In the example shown in FIGS. 1 and 2, the top surface of the first base material 11 defines the first top surface 10a of the first substrate 10. The bottom surface of the first substrate 10 is defined by the bottom surface of the first base material 11. The side surfaces of the first substrate 10 are defined by the side surfaces of the first base material 11. The first base material 11 is mainly made of an insulating or semiconducting material. Examples of materials that can be used to form the first base material 11 include semiconductor substrates such as silicon, ceramic substrates such as aluminum nitride, and resin substrates such as glass epoxy. However, the material that can be used to form the first base material 11 is not limited to these.

[0018] The first wiring portion 12 is disposed on the first upper surface 10a. The first substrate 10 preferably has a plurality of first wiring portions 12. As shown in FIG. 1, the plurality of first wiring portions 12 are disposed outside the first damming structure 50 in a top view, along the outer edge of the first damming structure 50. Here, the "outside" refers to the side farther from the object with respect to the geometric center of gravity O of the light emitting device 1 in a top view. In contrast, the "inside" refers to the side closer to the object with respect to the geometric center of gravity O of the light emitting device 1 in a top view. Note that the center of the light emitting surface of the light emitting device 1 may be used as the reference instead of the geometric center of gravity O of the light emitting device 1 in a top view.

[0019] In the example shown in FIG. 1 , some of the multiple first wiring portions 12 are arranged outside the outer edge of the first dam structure 50 on the +Y side and are lined up in a row along the X-axis direction. Other of the multiple first wiring portions 12 are arranged outside the outer edge of the first dam structure 50 on the -Y side and are lined up in a row along the X-axis direction. Note that in the example shown in FIG. 1 , no first wiring portion 12 is arranged outside the outer edge of the +X side or the -X side of the first dam structure 50. However, the first wiring portion 12 may also be arranged outside the outer edge of the +X side or the -X side of the first dam structure 50.

[0020] Examples of materials that can be used to form the first wiring portion 12 include metals such as gold, silver, copper, aluminum, nickel, rhodium, titanium, platinum, palladium, molybdenum, chromium, and tungsten, as well as alloys containing these metals. The first wiring portion 12 can have a single-layer structure made of these metals or alloys, or a multi-layer structure in which multiple layers made of these metals or alloys are stacked.

[0021] <Light emitting element 20> Each of the light-emitting elements 20 is a semiconductor light-emitting element such as an LED (Light Emitting Diode) or an LD (Laser Diode). The light-emitting elements 20 are arranged on the first upper surface 10a of the first substrate 10. In the example shown in FIG. 1, the light-emitting elements 20 are arranged in a matrix on the first upper surface 10a along, for example, the X-axis direction and the Y-axis direction. However, the direction in which the light-emitting elements 20 are arranged may be different from the X-axis direction and the Y-axis direction. For convenience of explanation, the light-emitting elements 20 arranged on the outermost side among the light-emitting elements 20 may be referred to as the "light-emitting element 20a" below. For example, in FIG. 1, the light-emitting elements 20 included in the column closest to the +X side, the light-emitting elements 20 included in the column closest to the -X side, the light-emitting elements 20 included in the row closest to the +Y side, and the light-emitting elements 20 included in the row closest to the -Y side each correspond to the "light-emitting element 20a." However, when all the light-emitting elements 20, including the light-emitting element 20a, are described without distinction, they will be collectively referred to as the "light-emitting element 20."

[0022] As shown in FIG. 2, each of the plurality of light-emitting elements 20 includes a semiconductor structure 21, a first electrode 22, and a second electrode 23. The semiconductor structure 21 emits, for example, blue light. The semiconductor structure 21 includes a first semiconductor layer 21a having a first conductivity type, an active layer 21b, and a second semiconductor layer 21c having a second conductivity type different from the first conductivity type. The first semiconductor layer 21a, the active layer 21b, and the second semiconductor layer 21c are stacked in this order along the Z-axis direction. One of the first semiconductor layer 21a and the second semiconductor layer 21c is an n-type semiconductor layer. The other of the first semiconductor layer 21a and the second semiconductor layer 21c is a p-type semiconductor layer. The active layer 21b may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers.

[0023] The first semiconductor layer 21a, the active layer 21b, and the second semiconductor layer 21c are each made of, for example, a nitride semiconductor. x Al y Ga 1-x-y The term "active layer 21b" includes semiconductors of all compositions in which the composition ratios x and y are varied within the respective ranges in a chemical formula of N (0≦x, 0≦y, x+y≦1). The peak emission wavelength of the light emitted by the active layer 21b is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and even more preferably 440 nm or more and 460 nm or less. The active layer 21b emits, for example, blue light. However, the peak emission wavelength of the light emitted by the active layer 21b is not limited to these. Furthermore, the semiconductors constituting each of the first semiconductor layer 21a, the active layer 21b, and the second semiconductor layer 21c are not limited to nitride semiconductors. Note that, hereinafter, the light emitted by the active layer 21b may be referred to as "light emitted by the semiconductor structure 21" or "light emitted by the light-emitting element 20."

[0024] The first electrode 22 and the second electrode 23 form a pair of positive and negative electrodes. That is, one of the first electrode 22 and the second electrode 23 is an anode electrode. The other of the first electrode 22 and the second electrode 23 is a cathode electrode. The first electrode 22 and the second electrode 23 are disposed at positions spaced apart from each other on the lower surface of the semiconductor structure 21. The first electrode 22 and the second electrode 23 may be made of, for example, the same metal or alloy as the first wiring portion 12.

[0025] The upper surface of the first electrode 22 is bonded to the first semiconductor layer 21a. The lower surface of the first electrode 22 is bonded, for example, to upper surface wiring arranged on the first upper surface 10a of the first substrate 10. As a result, the first electrode 22 is electrically connected to the first wiring unit 12. The upper surface of the second electrode 23 is bonded to the second semiconductor layer 21c. The lower surface of the second electrode 23 is bonded, for example, to upper surface wiring arranged on the first upper surface 10a of the first substrate 10, which is different from the upper surface wiring bonded to the lower surface of the first electrode 22. As a result, the second electrode 23 is electrically connected to the first wiring unit 12.

[0026] <Phosphor layer 26> As shown in Fig. 2, the phosphor layer 26 is disposed on the plurality of light-emitting elements 20. That is, the phosphor layer 26 contains the plurality of light-emitting elements 20 when viewed from above. The phosphor layer 26 converts the wavelength of at least a portion of the light emitted by the light-emitting elements 20. As a result, from the upper surface of the phosphor layer 26, light whose wavelength has been converted by the phosphor layer 26 and light that has passed through the phosphor layer 26 without being wavelength-converted by the phosphor layer 26 are emitted. A mixture of these light beams is extracted from the light-emitting device 1.

[0027] The phosphor layer 26 includes a base material containing a translucent material and a phosphor disposed at a position within the base material. Examples of the translucent material include a resin material, ceramic, and glass. In this embodiment, the translucent material constituting the base material of the phosphor layer 26 includes a resin material. Examples of the resin material include a silicone resin, a silicone-modified resin, an epoxy resin, an epoxy-modified resin, and a phenolic resin. In particular, a silicone resin or a modified resin thereof, which has excellent light resistance and heat resistance, is preferable. However, the translucent material is not limited to these.

[0028] The phosphor is an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 : Ce, hereinafter referred to as "YAG phosphor"), lutetium aluminum garnet phosphor (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSiO 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 oxynitride phosphors such as (La,Y)3Si6N 11 :Ce), BSESN phosphors (for example, (Ba,Sr)2Si5N8:Eu), SLA phosphors (for example, SrLiAl3N4:Eu), CASN phosphors (for example, CaAlSiN3:Eu) or SCASN phosphors (for example, (Sr,Ca)AlSiN3:Eu), nitride phosphors such as KSF phosphors (for example, K2SiF6:Mn), KSAF phosphors (for example, K2(Si 1-x Al x )F 6-x:Mn where x satisfies 0 < x < 1), or a fluoride-based phosphor such as an MGF system phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), a quantum dot having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), a II-VI group quantum dot (e.g., CdSe), a III-V group quantum dot (e.g., InP), or a quantum dot having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used. The phosphor layer 26 of the present embodiment contains a YAG (yttrium aluminum garnet) system phosphor excellent in heat resistance. For example, a part of the blue light emitted by the light emitting element 20 is converted into yellow light by the YAG system phosphor. A part of the blue light emitted by the light emitting element 20 and the yellow light emitted from the YAG system phosphor are mixed, and white light is emitted from the upper surface of the phosphor layer 26.

[0029] The length along the Z-axis direction of the phosphor layer 26, that is, the height 26H of the phosphor layer 26 is preferably 28 μm or less. Further, the height 26H of the phosphor layer 26 is more preferably 27 μm or less. By making the height 26H of the phosphor layer 26 as thin as 28 μm or less, the traveling distance of light in the phosphor layer 26 from the lower surface of the phosphor layer 26 to the upper surface of the phosphor layer 26 after entering can be shortened. By shortening the traveling distance of light in the phosphor layer 26, light scattering in the phosphor layer 26 is reduced. As a result, it is possible to reduce the light emitted from the phosphor layer 26 from spreading widely at a desired angle or more. As a result, the light from the light emitting element 20 that has performed the light emitting operation passing above the light emitting element 20 that is not performing the light emitting operation is reduced. That is, in a top view, the contrast ratio of the luminance between the light emitting region overlapping the light emitting element 20 that emits light and the non-light emitting region overlapping the light emitting element 20 that does not emit light can be improved.

[0030] When the height 26H of the phosphor layer 26 is 28 μm or less, the phosphor layer 26 preferably contains phosphors having an average particle size of 1 μm or more and 5 μm or less. By using phosphors having an average particle size of 1 μm or more and 5 μm or less, the adjustment range of the concentration of phosphors that can be contained in the phosphor layer 26 can be widened, and it becomes easier to adjust the chromaticity of the light emitted from the light-emitting device 1 to a desired chromaticity. Further, when using phosphors having an average particle size of 1 μm or more and 5 μm or less, the phosphor layer 26 preferably contains a rare-earth aluminate phosphor having a composition represented by the following formula (I). As an example of the average particle size, the average particle size measured by the Fisher Sub-Sieve Sizer method (hereinafter referred to as the "FSSS method") can be mentioned. The rare-earth aluminate phosphor contains rare-earth metal elements such as Y, La, Lu, Gd, and Tb, and is a phosphor having a garnet crystal structure. Examples of the rare-earth aluminate phosphor include YAG phosphor, lutetium-aluminum-garnet-based phosphor, and terbium-aluminum-garnet-based phosphor. Y (3-y) Al (5-x) Ga x O 12 :Ce y ···(I) (In formula (I), x and y are numbers that satisfy 0.00 < x ≦ 3.00 and 0.015 ≦ y ≦ 0.20, respectively.)

[0031] In the rare earth aluminate phosphor having the composition represented by the above formula (I), the wavelength of the light emitted from the phosphor can be adjusted by adjusting the composition ratio x of Ga and the composition ratio y of Ce. For example, by increasing the composition ratio x of Ga, the emission peak wavelength of the light emitted from the phosphor tends to shift to the shorter wavelength side, and by increasing the composition ratio y of Ce, the emission peak wavelength of the light emitted from the phosphor tends to shift to the longer wavelength side. Further, by increasing the composition ratio y of Ce, the absorption rate of the phosphor is improved, and the luminance of the light emitted from the phosphor tends to be improved. Therefore, in the formula (I), by setting the composition ratio y of Ce within the above range and making Ce relatively abundant, while increasing the luminance of the light emitted from the phosphor, by setting the composition ratio x of Ga within the above range and making a relatively large amount of a predetermined Ga, the lengthening of the wavelength of the light caused by increasing the composition ratio y of Ce can be reduced. In the above formula (I), the numerical range of x is 0.00 < x ≦ 3.00, preferably 0.10 ≦ x ≦ 1.00, and more preferably 0.25 ≦ x ≦ 0.60. Also, in the above formula (I), the numerical range of y is 0.015 ≦ y ≦ 0.20, preferably 0.03 ≦ y ≦ 0.15, and more preferably 0.07 ≦ y ≦ 0.10.

[0032] Examples of preferable configurations in the phosphor layer 26 include (Configuration 1) setting the height 26H of the phosphor layer 26 to 28 μm or less, (Configuration 2) using a phosphor having an average particle size of 1 μm or more and 5 μm or less, and (Configuration 3) using a phosphor containing a rare earth aluminate phosphor having the composition represented by the above formula (I) as the phosphor. Thereby, while improving the contrast ratio in the light-emitting device 1 by using the relatively thin phosphor layer 26 with a height 26H of 28 μm or less, a desired chromaticity can be achieved by using a phosphor with a small average particle size. Further, by using the phosphor represented by the above formula (I) which has a small particle size and high luminance, the luminance in the light-emitting device 1 can be improved.

[0033] The phosphor layer 26 includes, for example, a resin portion as a base material and a phosphor containing the rare earth aluminate phosphor of the above formula (I). As described above, the material constituting the resin portion may be a translucent resin material such as silicone resin, silicone-modified resin, epoxy resin, epoxy-modified resin, or phenolic resin. In the phosphor layer 26, when the resin portion is defined as 100 parts by mass, the amount of the phosphor containing the rare earth aluminate phosphor is, for example, 100 parts by mass to 150 parts by mass, preferably 100 parts by mass to 140 parts by mass, and more preferably 110 parts by mass to 130 parts by mass. Setting the concentration of the phosphor containing the rare earth aluminate phosphor as described above can reduce the proportion of light emitted from the light-emitting element 20 that is scattered by the phosphor, thereby improving the light extraction efficiency of the light-emitting device 1. Hereinafter, the amount of phosphor (parts by mass) when the resin portion is defined as 100 parts by mass may be referred to as the "phosphor concentration." The unit of phosphor concentration is sometimes expressed as "phr (per hundred resin)."

[0034] The phosphor layer 26 may contain, in addition to the rare earth aluminate phosphor of the above formula (I), another rare earth aluminate phosphor having a composition represented by the following formula (II). Y (3-x-z) Gd z Al (5-y) Ga y O 12 :Ce x (II) (In formula (II), x, y, and z are numbers that satisfy the conditions 0.015≦x≦0.15, 0.01≦y≦0.10, and 0.00≦z≦0.13, respectively.)

[0035] Experimental Examples 1 to 3 will be described with reference to Tables 1 to 3.

[0036] [Table 1]

[0037] [Table 2]

[0038] [Table 3]

[0039] Table 1 shows the results of the characteristic evaluation in Experimental Examples 1 to 3. Here, "Brightness (%)" in Table 1 corresponds to the percentage of brightness when the brightness in Experimental Example 1 is set to 100%. Furthermore, "Contrast ratio (%)" in Table 1 corresponds to the percentage of brightness of a non-light-emitting region that overlaps in top view with a non-light-emitting element 20 that does not emit light and is spaced a predetermined number of adjacent light-emitting elements 20 (for example, two) from the light-emitting element 20 that emitted the light, relative to the brightness of a light-emitting region that overlaps in top view with the light-emitting element 20 that emitted the light. A lower "contrast ratio (%)" indicates a lower brightness of the non-light-emitting region, i.e., a greater contrast between the brightness of the light-emitting region and the brightness of the non-light-emitting region.

[0040] First, in Experimental Example 1, the height 26H of the phosphor layer 26 was 30 μm, and a rare earth aluminate phosphor with an average particle size of 8 μm was used. The phosphor in Experimental Example 1 was a YAG phosphor that did not contain Ga or Gd. In Experimental Example 2, the height 26H of the phosphor layer 26 was 25 μm, and the rare earth aluminate phosphor of Reference Example 1 in Table 2 was used in combination with the rare earth aluminate phosphor of Reference Example 2 in Table 3 as a phosphor for adjusting color. The rare earth aluminate phosphor of Reference Example 1 has an average particle size of 1 μm to 5 μm, but does not contain Ga, so it does not fall within the range of formula (I). Furthermore, in Experimental Example 3, the height 26H of the phosphor layer 26 was 25 μm, and the rare earth aluminate phosphor of Example 1 in Table 2 was used in combination with the rare earth aluminate phosphor of Example 2 in Table 3 as a phosphor for adjusting color. The rare earth aluminate phosphor of Example 1 has an average particle size of 1 μm or more and 5 μm or less, and is a phosphor that falls within the range of formula (I). The "average particle size" in Tables 2 and 3 is the average particle size measured by the FSSS method. The "x coordinate" and "y coordinate" of "chromaticity" in Tables 2 and 3 correspond to the x coordinate and y coordinate of a chromaticity diagram according to JIS Z8110, for example. The "absorbance (%) 450 nm" in Tables 2 and 3 corresponds to the absorbance of excitation light in the phosphor when irradiated with excitation light having an emission peak wavelength of 450 nm. When the intensity of the excitation light is "α0" and the intensity of the part of the excitation light that is transmitted without being absorbed by the phosphor is "α", the "absorbance (%) 450 nm" can be calculated, for example, by "{1-(α / α0)} × 100".

[0041] As shown in Table 1, in Experimental Example 2, compared to Experimental Example 1, the contrast ratio of the light emitting device 1 was improved by setting the height 26H of the phosphor layer 26 to 28 μm or less, and by using a phosphor with an average particle size of 1 μm or more and 5 μm or less, a light emitting device 1 having a chromaticity range substantially equivalent to that of the light emitting device 1 in Experimental Example 1 while maintaining the concentration of the phosphor was achieved. Furthermore, in Experimental Example 3, compared to Experimental Example 2, a light emitting device 1 having a small particle size but high brightness was achieved by using the rare earth aluminate phosphor of the above formula (I). The chromaticity range of the light emitting device 1 in Experimental Example 3 is substantially equivalent to that of the light emitting devices 1 in Experimental Examples 1 and 2.

[0042] Next, a configuration example of the phosphor layer 26 will be described in more detail. As shown in Fig. 2, the phosphor layer 26 has a main body portion 261 and an extension portion 263. The main body portion 261 is disposed at a position overlapping the plurality of light-emitting elements 20 in a top view. For example, the main body portion 261 includes a flat plate-shaped region that collectively covers the upper surfaces of the plurality of light-emitting elements 20. However, the configuration of the main body portion 261 is not limited to this.

[0043] The extension portion 263 is continuous with the main body portion 261 and extends outward from the outer edge of the main body portion 261 in a top view. Although only the region of the extension portion 263 that is continuous with the outer edge on the -Y side of the main body portion 261 is shown in Fig. 2, the extension portion 263 has regions that are continuous with the outer edge on the +Y side, the outer edge on the +X side, and the outer edge on the -X side of the main body portion 261. In other words, the extension portion 263 is arranged so as to surround the main body portion 261 in a top view.

[0044] <Light blocking member 28> The light-shielding member 28 covers the side surfaces of each of the plurality of light-emitting elements 20. The light-shielding member 28 preferably has light reflectivity. By covering the side surfaces of the light-emitting elements 20 with the light-reflective light-shielding member 28, it is possible to direct the light emitted by the light-emitting elements 20, for example, toward the main body portion 261 of the phosphor layer 26. Furthermore, by disposing the light-shielding member 28 between adjacent light-emitting elements 20, it is possible to reduce the amount of light from the light-emitting elements 20 that have performed the light-emitting operation passing above the light-emitting elements 20 that are not performing the light-emitting operation. This makes it possible to improve the contrast ratio in brightness between the light-emitting region overlapping the light-emitting elements 20 that have emitted light and the non-light-emitting region overlapping the light-emitting elements 20 that do not emit light, as viewed from above.

[0045] The light-blocking member 28 is made of, for example, a resin material containing a light-reflecting substance. Examples of light-reflecting substances include titanium oxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, and silicon oxide. It is preferable to use one of these alone or two or more of them in combination. Examples of resin materials include resin materials whose main component is a thermosetting resin, such as epoxy resin, epoxy-modified resin, silicone resin, silicone-modified resin, or phenolic resin.

[0046] <Second substrate 30> The second substrate 30 has a second upper surface 30a, a lower surface, and a side surface connecting the second upper surface 30a and the lower surface. As shown in FIG. 2, the first substrate 10 is disposed on the second upper surface 30a. The second upper surface 30a of the second substrate 30 and the lower surface of the first substrate 10 may be directly bonded to each other, or may be bonded to each other via a bonding member, for example. As shown in FIG. 1, the second substrate 30 has a substantially rectangular outer shape when viewed from above. However, the second substrate 30 may have other outer shapes, such as a substantially circular, elliptical, or polygonal shape, when viewed from above.

[0047] The second base material 31 is the base material of the second substrate 30. The upper surface of the second base material 31 defines the second upper surface 30a of the second substrate 30. The lower surface of the second substrate 30 is defined by the lower surface of the second substrate 31. The side surfaces of the second substrate 30 are defined by the side surfaces of the second base material 31. Like the first base material 11 of the first substrate 10, the second base material 31 may be made mainly of an insulator or a semiconductor having insulating properties. However, the material constituting the second base material 31 is not limited to these.

[0048] The second wiring portion 32 is disposed on the second upper surface 30a. The second substrate 30 preferably has a plurality of second wiring portions 32. As shown in Fig. 1, the plurality of second wiring portions 32 are disposed outside the first substrate 10 and along the outer edge of the first substrate 10 in a top view.

[0049] In the example shown in FIG. 1 , some of the multiple second wiring portions 32 are arranged outside the outer edge of the first substrate 10 on the +Y side and are aligned in a row along the X-axis direction. Other of the multiple second wiring portions 32 are arranged outside the outer edge of the first substrate 10 on the -Y side and are aligned in a row along the X-axis direction. That is, the multiple second wiring portions 32 face the multiple first wiring portions 12 across the outer edge of the first substrate 10 in a top view. Note that in the example shown in FIG. 1 , the second wiring portions 32 are not arranged outside the outer edge of the +X side or the outer edge of the -X side of the first substrate 10. However, the second wiring portions 32 may also be arranged outside the outer edge of the +X side or the outer edge of the -X side of the first substrate 10.

[0050] Each of the multiple second wiring parts 32 may be made of the same metal or alloy as the first wiring part 12. Furthermore, like the first wiring part 12, the second wiring part 32 may have a single layer structure made of a metal or alloy, or may have a layered structure in which multiple layers made of a metal or alloy are stacked.

[0051] <Wire 40> The wire 40 electrically connects the first wiring portion 12 arranged on the first upper surface 10a of the first substrate 10 and the second wiring portion 32 arranged on the second upper surface 30a of the second substrate 30. The wire 40 is, for example, a thin conductor wire or a ribbon wire. In the example shown in FIG. 1 , the plurality of wires 40 are provided to connect the first wiring portions 12 and the second wiring portions 32 that face each other across the outer edge of the first substrate 10, among the plurality of first wiring portions 12 and the plurality of second wiring portions 32. The first wiring portion 12 and the second wiring portion 32 are electrically connected via the wire 40, and thus the first wiring portion 12 is electrically connected to an external power source via the second wiring portion 32 and the wire 40. That is, power from the external power source is supplied to the light-emitting element 20 via the second wiring portion 32, the wire 40, and the first wiring portion 12.

[0052] Examples of materials that may be used to form each of the wires 40 include metals such as gold, copper, platinum, and aluminum, as well as alloys containing these metals. However, the materials that may be used to form the wires 40 are not limited to these metals and alloys.

[0053] 2, the wire 40 has a curved shape including a top 43. That is, the top 43 of the wire 40 is located higher than the joint of the wire 40 with the first wiring portion 12 and the joint of the wire 40 with the second wiring portion 32. The top 43 of the wire 40 may also be located higher than the upper surface of the light-emitting element 20 and the upper surface of the main body portion 261 of the phosphor layer 26.

[0054] <First dam structure 50> 1 and 2, the first damming structure 50 is disposed on the first upper surface 10a of the first substrate 10. The first damming structure 50 is disposed surrounding the plurality of light-emitting elements 20. In the example shown in FIGS. 1 and 2, the first damming structure 50 is a frame-shaped structure protruding upward from the first upper surface 10a. However, the first damming structure 50 is not limited to having a frame-shaped configuration protruding upward from the first upper surface 10a.

[0055] 2, the first damming structure 50 is preferably disposed across the extension 263 of the phosphor layer 26 and the first upper surface 10a of the first substrate 10. That is, the inner region of the first damming structure 50 is disposed on the extension 263 of the phosphor layer 26. This allows the extension 263 to be fastened to the first upper surface 10a by the first damming structure 50. As a result, peeling of the phosphor layer 26 from the first upper surface 10a and the upper surface of the light-emitting element 20 can be reduced. Furthermore, the inner region of the first damming structure 50 overlaps the outer edge of the extension 263 in a top view. Therefore, even if the shape of the outer edge of the extension portion 263 is, for example, a geometrically asymmetrical shape such as an irregularly meandering shape, the outer edge of the extension portion 263 is covered with the first damming structure 50, thereby reducing impairment of the appearance of the light emitting device 1. However, the first damming structure 50 may be disposed apart from the phosphor layer 26.

[0056] 2, the first dam structure 50 has a generally semi-elliptical shape that protrudes upward in a cross-sectional view. However, the cross-sectional shape of the first dam structure 50 is not limited to a generally semi-elliptical shape. The cross-sectional shape of the first dam structure 50 may be another shape, such as a generally semi-circular shape that protrudes upward, a generally triangular shape, a generally rectangular shape, or another generally polygonal shape.

[0057] The top of the first damming structure 50 is preferably higher than the top surface of the main body 261 of the phosphor layer 26. That is, the height 50H of the first damming structure 50 from the first top surface 10a is preferably higher than the height 26H of the phosphor layer 26 from the first top surface 10a. Hereinafter, the height 50H of the first damming structure 50 from the first top surface 10a refers to the height of the top of the first damming structure 50 from the first top surface 10a. The height 50H of the first damming structure 50 from the first top surface 10a will be referred to as the "height 50H of the first damming structure 50." The first damming structure 50 has the role of damming the insulating member 60. Since the top of the first damming structure 50 is higher than the upper surface of the main body 261 of the phosphor layer 26, the insulating member 60 can be easily blocked so as not to flow into the phosphor layer 26 side.

[0058] The first damming structure 50 is preferably a light-transmitting member. Here, "light-transmitting" refers to a property of having a transmittance of at least 60% or more, preferably 80% or more, for light emitted from the light-emitting element 20 or the phosphor layer 26. When the first damming structure 50 is a light-transmitting member, it is possible to reduce the amount of stray light, described later, that is caused by reflection of light emitted from the outermost light-emitting element 20a by the first damming structure 50, compared to when the first damming structure 50 is a light-reflective member. Furthermore, when the first damming structure 50 is a light-reflective member, multiple reflections of light occur between the first damming structure 50 and the main body 261, and the boundary between the first damming structure 50 and the main body 261 may appear to be bright (a bright line) when viewed from above. On the other hand, if the first dam structure 50 is a light-transmitting member, it is possible to reduce multiple reflections of light between the first dam structure 50 and the main body 261, and to emit light with less brightness unevenness. Examples of materials that can be used to form the first dam structure 50 include resin materials whose main component is a thermosetting resin, such as epoxy resin, epoxy-modified resin, silicone resin, silicone-modified resin, or phenolic resin. However, the materials that can be used to form the first dam structure 50 are not limited to these. The first dam structure 50 may also be a member that is light-reflective or light-absorbing.

[0059] It is preferable that the first damming structure 50 does not overlap the main body portion 261 of the phosphor layer 26 in a top view. This prevents the distance between the insulating member 60 blocked by the first damming structure 50 and the outermost light-emitting element 20a from becoming excessively short. As a result, for example, it is possible to prevent light emitted by the outermost light-emitting element 20a from passing through the phosphor layer 26 and the first damming structure 50 and reaching the insulating member 60. The light that reaches the insulating member 60 may be reflected by the surface of the insulating member 60 and then emitted to the outside of the light-emitting device 1. Here, the light reflected by the surface of the insulating member 60 may become stray light that is emitted to the outside of the light-emitting device 1 from a region other than the upper surface of the main body portion 261 of the phosphor layer 26. By relatively increasing the distance between the insulating member 60 and the outermost light-emitting element 20a across the first damming structure 50, it is possible to reduce the emission of stray light from the light-emitting device 1.

[0060] <Second dam structure 55> The second damming structure 55 is disposed on the second upper surface 30a of the second substrate 30. As shown in FIG. 1, the second damming structure 55 is disposed in a frame shape surrounding the first substrate 10 in a top view. As shown in FIG. 2, the second damming structure 55 protrudes upward from the second upper surface 30a in a cross-sectional view. In the example shown in FIG. 2, the shape of the second damming structure 55 in a cross-sectional view is a substantially semi-ellipse that protrudes upward. However, the shape of the second damming structure 55 in a cross-sectional view is not limited to a substantially semi-ellipse. The shape of the second damming structure 55 in a cross-sectional view may be another shape, such as a substantially semi-circle, a substantially triangle, a substantially rectangle, or another substantially polygonal shape that protrudes upward.

[0061] The second damming structure 55 has the role of damming up the insulating member 60. That is, the combination of the second damming structure 55 and the first damming structure 50 located inside the second damming structure 55 dams up the movement of the insulating member 60 inward and outward.

[0062] The height 55H of the second damming structure 55 from the second upper surface 30a (hereinafter referred to as the "height 55H of the second damming structure 55") is preferably higher than the height 50H of the first damming structure 50. Here, the height 55H of the second damming structure 55 refers to the height of the top of the second damming structure 55 from the second upper surface 30a. As shown in FIG. 2, the volume of the region outside the top 63 of the insulating member 60 is larger than the volume of the region inside the top 63 of the insulating member 60. Therefore, by making the height 55H of the second damming structure 55 higher than the height 50H of the first damming structure 50, the insulating member 60 can be more reliably dammed. Note that in the example shown in FIG. 2, the second damming structure 55 is formed of a single convex member. However, the second damming structure 55 may have a configuration in which multiple convex members are connected in the Z-axis direction. As an example of making the height 55H of the second dam structure 55 higher than the height 50H of the first dam structure 50, the first dam structure 50 consists of a single convex member, and the second dam structure 55 consists of a laminated structure in which two or more convex members are connected together.

[0063] The second dam structure 55 is preferably a light-transmitting member. Examples of materials that can be used to form the second dam structure 55 include resin materials whose main component is a thermosetting resin, such as epoxy resin, epoxy-modified resin, silicone resin, silicone-modified resin, or phenolic resin. However, the materials that can be used to form the second dam structure 55 are not limited to these. The second dam structure 55 may also be a light-reflective or light-absorbing member.

[0064] <Insulating member 60> 1, the insulating member 60 is disposed outside the first damming structure 50 in a top view. The insulating member 60 is disposed inside the second damming structure 55 in a top view. That is, the insulating member 60 is disposed in a frame shape so as to surround the first damming structure 50 in a region between the first damming structure 50 and the second damming structure 55 in a top view.

[0065] 2, the insulating member 60 protrudes upward from the first upper surface 10a of the first substrate 10 and the second upper surface 30a of the second substrate 30 in a cross-sectional view. The insulating member 60 is disposed so as to straddle the first upper surface 10a and the second upper surface 30a. As a result, the insulating member 60 covers the plurality of first wiring portions 12, the plurality of second wiring portions 32, and the plurality of wires 40. In other words, the insulating member 60 protects the plurality of first wiring portions 12, the plurality of second wiring portions 32, and the plurality of wires 40, and prevents the wires 40 and the like from being exposed to the outside in a top view.

[0066] The insulating member 60 includes, for example, a resin containing a filler with light-blocking properties. Examples of resins include silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, and acrylic resin. Examples of fillers with light-blocking properties include light-absorbing substances such as pigments, carbon black, titanium black, and graphite, and light-reflecting substances such as titanium oxide, aluminum oxide, zinc oxide, barium carbonate, barium sulfate, boron nitride, aluminum nitride, and glass filler. The external color of the insulating member 60 is, for example, white, which has excellent light reflectivity. However, the external color of the insulating member 60 may be other colors, such as gray, which has light reflectivity and light absorption properties.

[0067] As shown in FIG. 2 , the insulating member 60 has an inner end 61, a recess 62, a top 63, and an outer end 64 in one cross section. The insulating member 60 contacts the first damming structure 50 at the inner end 61 and the recess 62. The insulating member 60 also contacts the second damming structure 55 at the outer end 64. The top 63 of the insulating member 60 is higher than the top 43 of the wire 40. Inward movement of the insulating member 60 is blocked by the first damming structure 50. Outward movement of the insulating member 60 is blocked by the second damming structure 55.

[0068] The inner end 61 is the innermost portion of the insulating member 60. As shown in FIG. 2 , the inner end 61 is located above the top surface of the light-emitting element 20 in a cross-sectional view. For example, the inner end 61 is located above the top surface of the outermost light-emitting element 20a in a cross-sectional view. Furthermore, the inner end 61 is located above the top surfaces of the main body 261 and the extension 263 of the phosphor layer 26 in a cross-sectional view. Furthermore, the inner end 61 is preferably located at approximately the same position as the top of the first damming structure 50 or outside the top of the first damming structure 50 in a cross-sectional view. This reliably blocks inward movement of the insulating member 60 and prevents the surface of the insulating member 60 from protruding inward from the first damming structure 50, thereby reducing the distance between the insulating member 60 and the outermost light-emitting element 20a. This reduces stray light emitted from the light-emitting device 1.

[0069] In the cross-sectional view shown in FIG. 2 , the distance between a line L1 perpendicular to the first upper surface 10a and passing through the inner end 61 and a line L2 perpendicular to the first upper surface 10a and passing through the outer end 20a1 of the outermost light-emitting element 20a is defined as a first distance A. The first distance A is preferably 50 μm or more and 490 μm or less. Furthermore, the first distance A is more preferably 200 μm or more and 490 μm or less, and even more preferably 400 μm or more and 490 μm or less. By setting the first distance A to 50 μm or more, the distance between the insulating member 60 and the outermost light-emitting element 20a is reduced to an excessively short value, thereby reducing the risk of light emitted by the light-emitting element 20a reaching the insulating member 60. In other words, the emission of stray light from the light-emitting device 1 can be reduced. Furthermore, by setting the first distance A to 490 μm or less, the light-emitting device 1 can be made smaller.

[0070] As shown in FIG. 2 , the recess 62 extends from the inner end 61 to the first upper surface 10a of the first substrate 10 in a cross-sectional view. Almost the entire area of ​​the recess 62 contacts the surface of the first damming structure 50. In a cross-sectional view, the recess 62 is recessed to correspond to the curvature of the surface of the first damming structure 50. That is, the normal to the surface of the insulating member 60 that defines the recess 62 faces the first upper surface 10a. This reduces upward reflection of light that, for example, is emitted from the side surface of the outermost light-emitting element 20a, passes through the phosphor layer 26 and the first damming structure 50, and reaches the recess 62. As a result, stray light emitted from the light-emitting device 1 can be reduced.

[0071] The region of the surface of the insulating member 60 that is inward from the apex 63 extends to the inner end 61. In the cross-sectional view shown in FIG. 2 , the longest distance between the line L3 connecting the inner end 61 and the apex 63 and the region of the surface of the insulating member 60 between the inner end 61 and the apex 63 in a direction perpendicular to the line L3 is defined as a third distance C. The third distance C is preferably 30 μm or more and 160 μm or less. Furthermore, the third distance C is more preferably 40 μm or more and 85 μm or less, and even more preferably 55 μm or more and 80 μm or less. Setting the third distance C to 30 μm or more prevents the wire 40 and the like from being exposed to the outside. Setting the third distance C to 160 μm or less prevents the region of the surface of the insulating member 60 between the inner end 61 and the apex 63 from excessively protruding inward. This reduces the amount of light emitted by each of the plurality of light-emitting elements 20, including the outermost light-emitting element 20a, reaching the insulating member 60. That is, the amount of stray light emitted from the light emitting device 1 can be reduced.

[0072] In addition, in the cross-sectional view shown in FIG. 2 , the distance in the height direction between the top 63 of the insulating member 60 and the first upper surface 10a of the first substrate 10 is defined as a second distance B. The second distance B is preferably 280 μm or more and 620 μm or less. The second distance B is more preferably 400 μm or more and 580 μm or less, and even more preferably 450 μm or more and 540 μm or less. Setting the second distance B to 280 μm or more can prevent wires and the like from being exposed to the outside. Setting the second distance B to 620 μm or less can prevent the height of the top 63 from becoming excessively large. This can prevent light emitted from each of the multiple light-emitting elements 20, including the outermost light-emitting element 20a, from reaching the insulating member 60. In other words, it can reduce stray light emitted from the light-emitting device 1.

[0073] Furthermore, the distance in the height direction between the top 43 of the wire 40 and the first upper surface 10a of the first substrate 10 is defined as a fourth distance D. In order to more effectively reduce stray light emitted from the light emitting device 1, the fourth distance D is preferably 100 μm or more and 400 μm or less. Furthermore, the fourth distance D is more preferably 150 μm or more and 270 μm or less, and even more preferably 160 μm or more and 240 μm or less. Note that, when the wire 40 is not visible in the cross-sectional view shown in FIG. 2, the fourth distance D may be defined as the distance in the height direction between the top 43 of the wire 40 closest to line II-II shown in FIG. 1 and the first upper surface 10a of the first substrate 10. In this case, the fourth distance D may be measured by any measuring means.

[0074] The outer end 64 is the outermost portion of the insulating member 60. As shown in Fig. 2, the outer end 64 reaches the second damming structure 55 in a cross-sectional view. It is preferable that the outer end 64 is located at approximately the same position as the top of the second damming structure 55 or further inward than the top of the second damming structure 55 in a cross-sectional view. This ensures that the outward movement of the insulating member 60 is blocked.

[0075] <First distance A, second distance B, third distance C, and fourth distance D> In order to more effectively reduce stray light emitted from the light emitting device 1, the relationship between the first distance A and the second distance B satisfies the following formula (1). 0.1 × B ≦ A ≦ B (1) Furthermore, it is preferable that the relationship between the second distance B and the third distance C satisfies the following formula (2). 0.1×B≦C≦0.3×B (2) Furthermore, it is preferable that the relationship between the second distance B and the fourth distance D satisfies the following formula (3). 1.5×D≦B≦3.0×D (3)

[0076] An example of the influence on stray light at the first distance A and the third distance C will be described using Experimental Examples 4 to 8 and Comparative Example 1. However, the present disclosure is not limited to the configurations of Experimental Examples 4 to 8.

[0077] Experimental Examples 4 to 8 and Comparative Example 1 each have different first distance A, second distance B, and third distance C. Experimental Examples 4 to 8 are examples in which the relationship between the first distance A and the second distance B satisfies the above formula (1) (see Table 4 below). Experimental Examples 4 to 8 are examples in which the relationship between the third distance C and the second distance B satisfies the above formula (2) (see Table 5 below). On the other hand, Comparative Example 1 is an example in which the relationship between the first distance A and the second distance B does not satisfy the above formula (1). The fourth distance D was the same (210 μm) in Experimental Examples 4 to 8 and Comparative Example 1.

[0078] For Experimental Examples 4 to 8 and Comparative Example 1, the luminous intensity was measured at each position outside the outer end 20a1 of the light-emitting element 20a. The luminous intensity measurements were performed using a 2D spectroradiometer SR5000 manufactured by Topcon Technohouse Corporation. The luminous intensity measurement results for Experimental Examples 4 to 8 and Comparative Example 1 will be described with reference to FIG. 3 . FIG. 3 is a graph showing the luminous intensity distribution outside the outer end 20a1 of the light-emitting element 20a for Experimental Examples 4 to 8 and Comparative Example 1. The horizontal axis of the graph shown in FIG. 3 represents the distance (μm) from the position of the outer end 20a1 of the light-emitting element 20a shown in FIG. 2 in the Y-axis direction to the -Y side. The larger the value on the horizontal axis, the farther the position is from the outer end 20a1 of the light-emitting element 20a to the -Y side. The vertical axis of the graph shown in FIG. 3 represents the relative luminous intensity of light at each position outside the outer end 20a1 of the light-emitting element 20a. The relative emission intensity shown on the vertical axis of the graph in FIG. 3 is a percentage of emission intensity when the maximum value of the emission peak intensity in the region overlapping with the plurality of light emitting elements 20 in top view is set to 100%.

[0079] As shown in FIG. 3 , in all of Experimental Examples 4 to 8 and Comparative Example 1, a light-increasing region in which the light emission intensity changes convexly was confirmed outside the outer end 20a1 of the light-emitting element 20a (e.g., the portions indicated by symbols P1 to P6 in FIG. 3 ). The increased region is, for example, light emitted by the multiple light-emitting elements 20 that is reflected by a component located outside the light-emitting element 20a, such as the insulating member 60. The higher the relative light emission intensity of the light in the increased region, the more likely it is that light emitted from outside the outer end 20a1 of the light-emitting element 20a will be visible from the outside. That is, light in the increased region that has a relatively high light emission intensity becomes stray light. In this specification, light in the increased region with a relative light emission intensity of 7% or more is described as stray light. However, this is for convenience of explanation, and does not exclude from the scope of the present disclosure light-emitting devices in which an increased region with a relative light emission intensity of 7% or more does not appear outside the outer end 20a1 of the light-emitting element 20a.

[0080] As shown in Figure 3, multiple increased regions were confirmed in the emission intensity distribution in each example except for Experimental Example 7. In examples with multiple increased regions, the increased region with the highest relative emission intensity was taken as the representative region, and whether stray light was emitted was determined based on whether the relative emission intensity of the representative region was 7% or higher. Hereinafter, the term "increased region" refers to the increased region with the highest relative emission intensity in each example.

[0081] Next, the influence of the first distance A and the third distance C on stray light will be described with reference to Table 4, Table 5, FIGS. 4, and 5. Table 4 shows the "first distance A," "second distance B," "first distance A / second distance B," and "relative luminous intensity of light in the increasing region" for Experimental Examples 4 to 8 and Comparative Example 1. Table 5 shows the "third distance C," "second distance B," "third distance C / second distance B," and "relative luminous intensity of light in the increasing region" for Experimental Examples 4 to 8. FIG. 4 is a graph showing the relationship between the first distance A and the relative luminous intensity of light in the increasing region. The horizontal axis of FIG. 4 represents the first distance A. The vertical axis of FIG. 4 represents the relative luminous intensity of light in the increasing region. FIG. 5 is a graph showing the relationship between the third distance C and the relative luminous intensity of light in the increasing region. The horizontal axis of FIG. 5 represents the third distance C. The vertical axis of FIG. 5 represents the relative luminous intensity of light in the increasing region.

[0082] [Table 4]

[0083] [Table 5]

[0084] Focusing on Experimental Examples 6 and 8, in which the values ​​of the second distances B and the third distances C are approximately the same, as shown in Table 4, the relative luminous intensity of the light in the increasing region was reduced in Experimental Example 6, in which the first distance A was longer. This tendency is also reflected in the graph shown in FIG. 4. According to the graph shown in FIG. 4, when the first distance A was 200 μm, the relative luminous intensity of the light in the increasing region could be reduced to approximately 5%. Furthermore, when the first distance A was 400 μm, the relative luminous intensity of the light in the increasing region could be reduced to approximately 3%. On the other hand, in Comparative Example 1, in which the first distance A was the shortest, the relative luminous intensity of the light in the increasing region exceeded 7%. That is, in Comparative Example 1, stray light was emitted from outside the outer end 20a1 of the light-emitting element 20a. From these findings, it was confirmed that the shorter the first distance A, the higher the possibility of stray light emission, while the longer the first distance A, the lower the possibility of stray light emission.

[0085] Furthermore, as shown in Table 4, in Experimental Examples 4 to 8 in which the relationship between the first distance A and the second distance B satisfied the above formula (1), light having a high relative luminous intensity corresponding to stray light was not emitted from outside the outer end 20a1 of the light-emitting element 20a. On the other hand, in Comparative Example 1 in which the relationship between the first distance A and the second distance B did not satisfy the above formula (1), stray light was emitted. In other words, the possibility of stray light being emitted was reduced by the relationship between the first distance A and the second distance B satisfying the above formula (1).

[0086] Furthermore, when focusing on Experimental Examples 4 and 5, in which the values ​​of the first distances A and the values ​​of the second distances B are roughly the same, as shown in Table 5, the relative luminous intensity of the light in the increased region was reduced in Experimental Example 4, in which the third distance C was short. This tendency is also reflected in the graph shown in FIG. 5. On the other hand, in Experimental Example 8, in which the third distance C was the longest, the relative luminous intensity of the light in the increased region was the highest compared to the other Experimental Examples. From these findings, it was confirmed that the longer the third distance C, the higher the possibility of stray light being emitted, while the shorter the third distance C, the lower the possibility of stray light being emitted.

[0087] Furthermore, as shown in Table 5, in Experimental Examples 4 to 8 in which the relationship between the third distance C and the second distance B satisfied the above formula (2), light having a high relative luminous intensity corresponding to stray light was not emitted from outside the outer end 20a1 of the light-emitting element 20a. In other words, the relationship between the third distance C and the second distance B satisfied the above formula (2), thereby reducing the possibility of stray light being emitted.

[0088] <Method of Manufacturing Light-Emitting Device 1> Next, a method for manufacturing the light emitting device 1 according to the embodiment will be described with reference to Fig. 6 to Fig. 10. Each of Fig. 6 to Fig. 10 is a partial cross-sectional view schematically showing a part of a cross section cut along the YZ plane, for explaining the method for manufacturing the light emitting device 1 according to the embodiment.

[0089] A manufacturing method of the light emitting device 1 according to the embodiment includes, for example, a step of preparing an intermediate 1M, a step of connecting a wire 40, a step of forming a first damming structure 50, a step of forming a second damming structure 55, and a step of forming an insulating member 60.

[0090] First, a step of preparing an intermediate body 1M is carried out. The prepared intermediate body 1M includes a first substrate 10, a plurality of light-emitting elements 20, a phosphor layer 26, and a second substrate 30, as shown in FIG.

[0091] Next, a step of connecting the wire 40 is performed. As shown in Fig. 7, using a connection method such as wire bonding, one end of the wire 40 is joined to the first wiring portion 12 arranged on the first upper surface 10a of the first substrate 10, and the other end of the wire 40 is joined to the second wiring portion 32 arranged on the second upper surface 30a of the second substrate 30. As a result, the wire 40 electrically connects the first wiring portion 12 and the second wiring portion 32.

[0092] Next, a step of forming the first damming structure 50 is performed. The first damming structure 50 is formed so as to surround the plurality of light-emitting elements 20. At this time, as shown in FIG. 8 , it is preferable to form the first damming structure 50 so as to straddle the extension portion 263 of the phosphor layer 26 and the first upper surface 10a of the first substrate 10. One example of a method for forming the first damming structure 50 is a method of applying the material to become the first damming structure 50 using a discharge mechanism including a reservoir that stores the material to become the first damming structure 50 before curing and a nozzle communicating with the reservoir. For example, the material to become the first damming structure 50 is applied to the area surrounding the plurality of light-emitting elements 20 through the nozzle of the discharge mechanism. Thereafter, the applied material to become the first damming structure 50 is cured using, for example, any heating means. In this way, the first damming structure 50 is formed. However, the method for forming the first damming structure 50 is not limited to this.

[0093] Next, a step of forming the second damming structure 55 is performed. The second damming structure 55 is formed on the second upper surface 30a of the second substrate 30 so as to surround the outer edge of the first substrate 10. At this time, as shown in FIG. 9 , the second damming structure 55 is formed outside the wires 40. As an example of a method for forming the second damming structure 55, similar to the method for forming the first damming structure 50, there is a method in which the material for the second damming structure 55 is applied using a discharge mechanism including a reservoir that stores the material for the second damming structure 55 before hardening and a nozzle that communicates with the reservoir. For example, the material for the second damming structure 55 is applied via the nozzle of the discharge mechanism to an area that surrounds the outer edge of the first substrate 10 and is outside the wires 40. Thereafter, the applied material for the second damming structure 55 is hardened using, for example, any heating means. This forms the second damming structure 55. However, the method for forming the second damming structure 55 is not limited to this.

[0094] Next, a step of forming the insulating member 60 is performed. The insulating member 60 is formed in the region between the first damming structure 50 and the second damming structure 55. At this time, as shown in FIG. 10 , the insulating member 60 covers the first wiring portion 12, the second wiring portion 32, and the wire 40. As an example of a method for forming the insulating member 60, similar to the methods for forming the first damming structure 50 and the second damming structure 55, there is a method in which the material to become the insulating member 60 is applied using a discharge mechanism including a reservoir that stores the material to become the insulating member 60 before hardening and a nozzle that communicates with the reservoir. For example, the material to become the insulating member 60 is applied to the region between the first damming structure 50 and the second damming structure 55 through the nozzle of the discharge mechanism. Thereafter, the applied material to become the insulating member 60 is hardened using, for example, any heating means. In this way, the insulating member 60 is formed. However, the method for forming the insulating member 60 is not limited thereto.

[0095] The light emitting device 1 is manufactured through these steps. In the example described with reference to Fig. 6 to Fig. 10, the second damming structure 55 is formed after the first damming structure 50 is formed, but the opposite may be true, that is, the first damming structure 50 is formed after the second damming structure 55 is formed. Furthermore, the method for manufacturing the light emitting device 1 may include steps other than those described with reference to Fig. 6 to Fig. 10.

[0096] [First Modification of the Embodiment] Next, a light emitting device 1A according to Modification 1 of the embodiment will be described with reference to FIGS. 11 and 12. FIG. 11 is a top view schematically showing the upper surface of the light emitting device 1A according to Modification 1 of the embodiment. FIG. 12 is a partial cross-sectional view schematically showing a cross section of a portion of the light emitting device 1A according to Modification 1 of the embodiment, taken along line XII-XII shown in FIG. 11. Note that in the light emitting device 1A according to Modification 1, components similar to those in the embodiment are denoted by the same reference numerals, and descriptions thereof will be omitted as appropriate. The cross section of the light emitting device 1A shown in FIG. 12 is an example of a cross section passing through the first substrate, the outermost light emitting element among the plurality of light emitting elements, the first damming structure, and the insulating member. That is, in the description with reference to FIG. 12, matters described as "in a cross section" can be rephrased as matters corresponding to "in a cross section."

[0097] In the light emitting device 1A according to the first modification, the configuration of the first damming structure 50A is different from the configuration of the first damming structure 50 of the embodiment. Specifically, as shown in FIGS. 11 and 12, the first damming structure 50A is a groove-shaped structure recessed from the first upper surface 10a of the first substrate 10, and is disposed to surround the plurality of light emitting elements 20 in a top view. In other words, the first damming structure 50A is a frame-shaped recessed portion provided in the first upper surface 10a of the first substrate 10. In the light emitting device 1A, the inner end 61 of the insulating member 60 is located on the inner surface of the first damming structure 50A. The inner surface of the first damming structure 50A includes an intersection between the first upper surface 10a and the recessed portion. Even if the first damming structure 50A is a groove-shaped structure recessed from the first upper surface 10a of the first substrate 10, it can still dam up the insulating member 60. Furthermore, because the first damming structure 50A is a groove-shaped structure recessed from the first upper surface 10a of the first substrate 10, the first damming structure 50A can be formed by removing a predetermined region of the first upper surface 10a by a processing method such as etching. Therefore, the ease and accuracy of processing the first damming structure 50A can be improved compared to the first damming structure 50 of the embodiment that protrudes upward using a resin material or the like.

[0098] [Modification 2 of the embodiment] Next, a light emitting device 1B according to Modification 2 of the embodiment will be described with reference to FIGS. 13 and 14. FIG. 13 is a top view schematically showing the upper surface of the light emitting device 1B according to Modification 2 of the embodiment. FIG. 14 is a partial cross-sectional view schematically showing a cross section of a portion of the light emitting device 1B according to Modification 2 of the embodiment, taken along line XIV-XIV shown in FIG. 13. Note that in the light emitting device 1B according to Modification 2, components similar to those in the embodiment are denoted by the same reference numerals, and descriptions thereof will be omitted as appropriate. The cross section of the light emitting device 1B shown in FIG. 14 is an example of a cross section passing through the first substrate, the outermost light emitting element among the plurality of light emitting elements, the first damming structure, and the insulating member. That is, in the description with reference to FIG. 14, matters described as "in a cross section" can be rephrased as matters corresponding to "in a cross section."

[0099] In the light emitting device 1B according to the second modification, the configuration of the second substrate 35 is different from the configuration of the second substrate 30 of the embodiment. In addition, as shown in Figs. 13 and 14, the light emitting device 1B does not have a second damming structure 55.

[0100] 14, the second substrate 35 includes a bottom portion 351 on which the first substrate 10 is disposed, and a sidewall portion 352 extending upward from the bottom portion 351. In the second substrate 35, an upper surface 351a of the bottom portion 351 corresponds to a second upper surface on which the first substrate 10 is disposed. The second wiring portion 32 is disposed on the upper surface 351a of the bottom portion 351.

[0101] The side wall portion 352 is disposed outside the insulating member 60 in top view. Furthermore, an outer end portion 64 of the insulating member 60 reaches the side wall portion 352 in top view. Although FIG. 14 only shows the side wall portion 352 extending upward from the outer edge on the -Y side of the bottom portion 351, the side wall portion 352 may have regions extending upward from each of the outer edge on the +Y side, the outer edge on the +X side, and the outer edge on the -X side of the bottom portion 351. That is, the side wall portion 352 may be disposed in a frame shape so as to surround the outer edge of the insulating member 60 in top view.

[0102] 14, the second substrate 35 is provided with sidewalls 352 extending upward from the bottom 351, and the sidewalls 352 can block the insulating member 60. This makes it possible to omit the second damming structure 55. As a result, the number of steps required to manufacture the light emitting device 1B can be reduced compared to the number of steps required to manufacture the light emitting device 1 according to the embodiment. As a result, costs can be reduced.

[0103] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0104] Aspects of the present disclosure are, for example, as follows. <Item 1> A first substrate having a first upper surface; a plurality of light-emitting elements disposed on the first upper surface of the first substrate; a second substrate having a second upper surface on which the first substrate is disposed; a wire electrically connecting a first wiring portion disposed on the first upper surface of the first substrate outside the plurality of light-emitting elements and a second wiring portion disposed on the second upper surface of the second substrate; a first damming structure disposed on the first upper surface of the first substrate and surrounding the plurality of light-emitting elements in a top view; a light-blocking insulating member that is arranged outside the first damming structure in a top view, covers the wire, the first wiring portion, and the second wiring portion, and has an inner end that reaches the first damming structure; In at least one cross section passing through the first substrate, the outermost light emitting element of the plurality of light emitting elements, the first damming structure, and the insulating member, a first distance A is a distance between a line passing through the inner end portion and perpendicular to the first upper surface and a line passing through the outer end portion of the outer light emitting element and perpendicular to the first upper surface; When the distance in the height direction between the top of the insulating member and the first upper surface of the first substrate is a second distance B, The first distance A and the second distance B satisfy the following formula (1): Light-emitting device. 0.1 × B ≦ A ≦ B (1) <Item 2> The first distance A is 50 μm or more and 490 μm or less, The second distance B is equal to or greater than 280 μm and equal to or less than 620 μm. The light emitting device according to <Item 1>. <Item 3> In the one cross section, When the longest distance between a straight line connecting the inner end portion and the apex of the insulating member and a region of the surface of the insulating member between the inner end portion and the apex in a direction perpendicular to the straight line is defined as a third distance C, The second distance B and the third distance C satisfy the following formula (2): The light emitting device according to <Item 1> or <Item 2>. 0.1×B≦C≦0.3×B (2) <Item 4> The third distance C is 30 μm or more and 160 μm or less. The light emitting device according to <Item 3>. <Item 5> When the distance in the height direction between the top of the wire and the first upper surface of the first substrate is a fourth distance D, The second distance B and the fourth distance D satisfy the following formula (3): The light emitting device according to any one of <Item 1> to <Item 4>. 1.5×D≦B≦3.0×D (3) <Item 6> The first damming structure is a frame-shaped structure that protrudes upward from the first upper surface of the first substrate. The light emitting device according to any one of <Item 1> to <Item 5>. <Item 7> The first damming structure is a light-transmitting member, the inner end is located above an upper surface of the light emitting element in a height direction, the insulating member has a recess in the cross section extending from the inner end to the first upper surface of the first substrate; The light-emitting device according to <Item 6>. <Item 8> Further including a phosphor layer disposed on the plurality of light-emitting elements, The height of the phosphor layer is 28 μm or less. The light-emitting device according to any one of <Item 1> to <Item 7>. <Item 9> The phosphor layer contains a rare earth aluminate phosphor having a composition represented by the following formula (I). The light-emitting device according to <Item 8>. Y (3-y) Al (5-x) Ga x O 12 :Ce y ···(I) (In formula (I), x and y are numbers satisfying 0.00 < x ≦ 3.00 and 0.015 ≦ y ≦ 0.20, respectively.) <Item 10> The phosphor layer includes a resin part and the rare earth aluminate phosphor, When the resin part is 100 parts by mass, the amount of the phosphor containing the rare earth aluminate phosphor is 100 parts by mass or more and 150 parts by mass or less, The average particle size of the rare earth aluminate phosphor is 1 μm or more and 5 μm or less. The light-emitting device according to <Item 9>. <Item 11> The phosphor layer has a main body part covering the upper surfaces of the plurality of light-emitting elements, and an extension part that is continuous with the main body part and extends outward from the main body part in a top view. The first dam structure is a frame-shaped structure protruding upward from the first upper surface of the first substrate. In the cross section, the first dam structure is disposed across the extension part of the phosphor layer and the first upper surface of the first substrate. The light-emitting device according to any one of <Item 8> to <Item 10>. <Item 12> The first dam structure is a translucent member. <000048...... The inner end portion is above the upper surface of the main body part and the upper surface of the extension part in the phosphor layer. the insulating member has a recess in the cross section extending from the inner end to the first upper surface of the first substrate; The light emitting device according to <Item 11>. <Item 13> The second damming structure is further provided, the second damming structure being a frame that is disposed on the second upper surface of the second substrate and has an outer end portion that is outwardly longer than the top of the insulating member in a top view, The height of the second damming structure from the second upper surface is higher than the height of the first damming structure from the first upper surface. The light emitting device according to <Item 6>. <Item 14> The second substrate is a bottom portion on which the first substrate is placed; a sidewall portion extending upward from the bottom portion and disposed outside the insulating member in a top view; Equipped with When viewed from above, an outer end of the insulating member that is outer than the top portion reaches the side wall portion. The light emitting device according to any one of <Item 1> to <Item 13>. <Item 15> The first damming structure is a groove-shaped structure recessed from the first upper surface of the first substrate, The inner end is located on the inner surface of the first damming structure. The light emitting device according to <Item 1>. [Explanation of symbols]

[0105] 1, 1A, 1B Light-emitting device 10 First board 10a 1st top surface 11 First base material 12 1st wiring section 20, 20a Light-emitting element 21 Semiconductor structure 22 1st electrode 23 2nd electrode 26 Phosphor layer 261 Main body 263 Extension section 28 Light blocking material 30,35 Second board 30a 2nd top surface 351 Bottom 351a top side 352 Side wall 31 Second base material 32 2nd wiring section 40 wire 43 Top 50,50A First dam structure 60 Insulating material 61 Inner end 62 recess 63 Top 64 Outer end

Claims

1. a first substrate having a first top surface; a plurality of light-emitting elements disposed on the first upper surface of the first substrate; a second substrate having a second upper surface on which the first substrate is disposed; a wire electrically connecting a first wiring portion disposed on the first upper surface of the first substrate outside the plurality of light-emitting elements and a second wiring portion disposed on the second upper surface of the second substrate; a first damming structure disposed on the first upper surface of the first substrate and surrounding the plurality of light-emitting elements; a light-blocking insulating member that is arranged outside the first damming structure in a top view, covers the wire, the first wiring portion, and the second wiring portion, and has an inner end that reaches the first damming structure; In at least one cross section passing through the first substrate, the outermost light-emitting element of the plurality of light-emitting elements, the first damming structure, and the insulating member, a first distance A is a distance between a line passing through the inner end portion and perpendicular to the first upper surface and a line passing through an outer end portion of the outer light emitting element and perpendicular to the first upper surface; When the distance in the height direction between the top of the insulating member and the first upper surface of the first substrate is a second distance B, The first distance A and the second distance B satisfy the following formula (1): Light-emitting device. 0.1 × B≦A≦B (1)

2. the first distance A is equal to or greater than 50 μm and equal to or less than 490 μm, The second distance B is equal to or greater than 280 μm and equal to or less than 620 μm. The light emitting device according to claim 1 .

3. In the one cross section, When the longest distance between a straight line connecting the inner end portion and the apex of the insulating member and a region of the surface of the insulating member between the inner end portion and the apex in a direction perpendicular to the straight line is defined as a third distance C, The second distance B and the third distance C satisfy the following formula (2): The light emitting device according to claim 1 or 2. 0.1 × B ≦ C ≦ 0.3 × B (2)

4. The third distance C is equal to or greater than 30 μm and equal to or less than 160 μm. The light emitting device according to claim 3 .

5. When the distance in the height direction between the top of the wire and the first upper surface of the first substrate is a fourth distance D, The second distance B and the fourth distance D satisfy the following formula (3): The light emitting device according to claim 1 or 2. 1.5 × D ≦ B ≦ 3.0 × D (3)

6. the first damming structure is a frame-shaped structure protruding upward from the first upper surface of the first substrate; The light emitting device according to claim 1 or 2.

7. the first damming structure is a light-transmitting member, the inner end is located above an upper surface of the light emitting element in a height direction, the insulating member has a recess in the cross section extending from the inner end to the first upper surface of the first substrate; The light emitting device according to claim 6 .

8. further comprising a phosphor layer disposed on the plurality of light-emitting elements; The height of the phosphor layer is 28 μm or less. The light emitting device according to claim 1 or 2.

9. The phosphor layer contains a rare earth aluminate phosphor having a composition represented by the following formula (I): The light emitting device according to claim 8 . Y （３－ｙ） Al （５－ｘ） Ga ｘ O １２ :Yes ｙ ・・・(@) (In formula (I), x and y are numbers that satisfy 0.00<x≦3.00 and 0.015≦y≦0.20, respectively.)

10. the phosphor layer includes a resin portion and the rare earth aluminate phosphor; the amount of the phosphor containing the rare earth aluminate phosphor is 100 parts by mass or more and 150 parts by mass or less when the resin portion is taken as 100 parts by mass, The average particle size of the rare earth aluminate phosphor is 1 μm or more and 5 μm or less. The light emitting device according to claim 9 .

11. the phosphor layer has a main body portion covering upper surfaces of the plurality of light-emitting elements, and an extension portion that is continuous with the main body portion and extends outward from the main body portion in a top view, the first damming structure is a frame-shaped structure protruding upward from the first upper surface of the first substrate, In the cross section, the first damming structure is disposed across the extending portion of the phosphor layer and the first upper surface of the first substrate. The light emitting device according to claim 8 .

12. the first damming structure is a light-transmitting member, the inner end portion is located above an upper surface of the main body portion and an upper surface of the extension portion of the phosphor layer, the insulating member has a recess in the cross section extending from the inner end to the first upper surface of the first substrate; The light emitting device according to claim 11.

13. a second damming structure having a frame shape, the second damming structure being disposed on the second upper surface of the second substrate and having an outer end portion extending outward from the top of the insulating member in a top view; a height of the second damming structure from the second upper surface is greater than a height of the first damming structure from the first upper surface; The light emitting device according to claim 6 .

14. The second substrate is a bottom portion on which the first substrate is placed; a sidewall portion extending upward from the bottom portion and disposed outside the insulating member in a top view; Equipped with When viewed from above, an outer end of the insulating member that is outer than the top portion reaches the side wall portion. The light emitting device according to claim 1 or 2.

15. the first damming structure is a groove-shaped structure recessed from the first upper surface of the first substrate, The inner end is located on the inner surface of the first damming structure. The light emitting device according to claim 1 .

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