Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device that can improve its characteristics, and a method for manufacturing the same.SOLUTION: According to an embodiment, a semiconductor device includes first to third electrodes and a semiconductor member. The semiconductor member includes a first semiconductor region and a second semiconductor region. The first semiconductor region includes Alx1Ga1-x1 N(0≤x1<1) and contains carbon. A first concentration of hydrogen in a sixth partial region of the first semiconductor region is lower than a second concentration of hydrogen in a fifth partial region of the first semiconductor region. The second semiconductor region includes Alx2Ga1-x2 N(x1<x2≤1). The second semiconductor region includes a first semiconductor portion.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor device and a manufacturing method thereof. [Background technology]

[0002] For example, in semiconductor devices such as transistors, improvements in characteristics are desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-162917 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present invention provide a semiconductor device capable of improving characteristics and a method for manufacturing the same. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, and a semiconductor member. A direction from the first electrode to the second electrode is along a first direction. The third electrode includes a first electrode portion. A position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The semiconductor member includes a first semiconductor region and a second semiconductor region. The first semiconductor region is Al x1 Ga 1-x1It contains N(0≦x1<1) and contains carbon. The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region. The direction from the first partial region to the first electrode is along a second direction that intersects the first direction. The direction from the second partial region to the second electrode is along the second direction. The direction from the third partial region to the first electrode portion is along the second direction. The fourth partial region is between the first partial region and the third partial region. The fifth partial region is between the third partial region and the second partial region. At least a part of the sixth partial region is between the first electrode portion and the fifth partial region in the first direction. The first hydrogen concentration in the sixth partial region is lower than the second hydrogen concentration in the fifth partial region. The second semiconductor region contains Al x2 Ga 1-x2 and contains N(x1<x2≦1). The second semiconductor region includes a first semiconductor portion. The direction from the fifth partial region to the first semiconductor portion is along the second direction.

Brief Description of the Drawings

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 2] FIG. 2 is a graph illustrating the characteristics of the semiconductor device. [Figure 3] FIG. 3 is a graph illustrating the characteristics of the semiconductor device. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. [Figure 9]9(a) to 9(f) are schematic cross-sectional views illustrating the method for manufacturing the semiconductor device according to the third embodiment. [Figure 10] 10(a) to 10(e) are schematic cross-sectional views illustrating the method for manufacturing the semiconductor device according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) FIG. 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. As shown in FIG. 1, a semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, and a semiconductor member 10M.

[0009] The direction from the first electrode 51 to the second electrode 52 is along the first direction D1. In the example of FIG. 1, the first direction D1 is along the X-axis direction. A direction perpendicular to the X-axis direction is defined as the Z-axis direction. A direction perpendicular to the X-axis and Z-axis directions is defined as the Y-axis direction.

[0010] The third electrode 53 includes a first electrode portion 53a. The position of the first electrode portion 53a in the first direction D1 is between the position of the first electrode 51 in the first direction D1 and the position of the second electrode 52 in the first direction D1.

[0011] The semiconductor member 10M includes a first semiconductor region 10 and a second semiconductor region 20. The first semiconductor region 10 is made of Al x1 Ga 1-x1The composition ratio x1 may be, for example, 0 or more and 0.13 or less. The first semiconductor region 10 may be a GaN layer.

[0012] The first semiconductor region 10 includes a first partial region 11, a second partial region 12, a third partial region 13, a fourth partial region 14, a fifth partial region 15, and a sixth partial region 16. The direction from the first partial region 11 to the first electrode 51 is along a second direction D2 that intersects with the first direction D1. The second direction D2 is, for example, the Z-axis direction.

[0013] The direction from the second partial region 12 to the second electrode 52 is along the second direction D2. The direction from the third partial region 13 to the first electrode portion 53a is along the second direction D2. The first electrode 51, the second electrode 52, and the third electrode 53 may extend along the third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0014] The fourth partial region 14 is located between the first partial region 11 and the third partial region 13. The fifth partial region 15 is located between the third partial region 13 and the second partial region 12. For example, the position of the fourth partial region 14 in the first direction D1 is between the position of the first partial region 11 in the first direction D1 and the position of the third partial region 13 in the first direction D1. The position of the fifth partial region 15 in the first direction D1 is between the position of the third partial region 13 in the first direction D1 and the position of the second partial region 12 in the first direction D1.

[0015] At least a portion of the sixth partial region 16 is located in the first direction D1 between the first electrode portion 53a and the fifth partial region 15. The hydrogen concentration in the sixth partial region 16 (first hydrogen concentration) is lower than the hydrogen concentration in the fifth partial region 15 (second hydrogen concentration).

[0016] The second semiconductor region 20 is Al x2 Ga 1-x2It includes N(x1 < x2 ≤ 1). The composition ratio x2 may be, for example, not less than 0.15 and not more than 0.4. The second semiconductor region 20 may be, for example, an AlGaN layer. The second semiconductor region 20 includes the first semiconductor portion 21. The direction from the fifth partial region 15 to the first semiconductor portion 21 is along the second direction D2.

[0017] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. For example, the potential of the third electrode 53 may be a potential based on the potential of the first electrode 51. For example, the first electrode 51 is one of the source electrode and the drain electrode. The second electrode 52 is the other of the source electrode and the drain electrode. The third electrode 53 is the gate electrode. The semiconductor device 110 is, for example, a transistor.

[0018] The first semiconductor region 10 includes a portion facing the second semiconductor region 20. A carrier region is formed in this portion. The carrier region is, for example, a two-dimensional electron gas. The semiconductor device is, for example, a HEMT (High Electron Mobility Transistor).

[0019] In the embodiment, it has been found that a high threshold voltage can be obtained by including carbon in the first semiconductor region 10. Further, it has been found that the threshold voltage also changes depending on the hydrogen concentration in the first semiconductor region 10.

[0020] FIG. 2 is a graph illustrating the characteristics of the semiconductor device. FIG. 2 illustrates the measurement results of the threshold voltage in a sample in which the entire first semiconductor region 10 includes carbon in the configuration of the semiconductor device 110 described above. In the sample, the first semiconductor region 10 substantially does not contain hydrogen. The horizontal axis in FIG. 2 is the carbon concentration CC. The vertical axis is the threshold voltage Vth. As shown in FIG. 2, when the carbon concentration CC is high, a high threshold voltage Vth can be obtained.

[0021] FIG. 3 is a graph illustrating the characteristics of the semiconductor device. 3 illustrates the threshold voltage when the entire first semiconductor region 10 contains carbon and hydrogen in the configuration of the semiconductor device 110. In this example, the carbon concentration CC is 7×10 16 / cm 3 The horizontal axis of Figure 3 is the concentration ratio R1, which is the ratio of the hydrogen concentration CH to the carbon concentration CC. The vertical axis is the threshold voltage Vth. As shown in Figure 2, a high threshold voltage Vth is obtained when the concentration ratio R1 is low. When the concentration ratio R1 is high, the threshold voltage Vth decreases.

[0022] In the embodiment, if a high threshold voltage is obtained at one position between the first electrode 51 and the second electrode 52, a high threshold voltage is obtained for the entire semiconductor device 110. It is preferable that the threshold voltage is low except for the specific position where the high threshold voltage is obtained, thereby obtaining a low on-resistance.

[0023] In the embodiment, the first hydrogen concentration in the sixth partial region 16 is lower than the second hydrogen concentration in the fifth partial region 15. The sixth partial region 16 has a low hydrogen concentration, which results in a high threshold voltage in the sixth partial region 16. On the other hand, the fifth partial region 15 has a high hydrogen concentration, which results in a low on-resistance. In the embodiment, a high threshold voltage and a low on-resistance are obtained. The high hydrogen concentration in the fifth partial region 15 can reduce traps in the fifth partial region 15, for example. The reduced number of traps can reduce current collapse. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0024] In the embodiment, the concentration ratio R1 is preferably 1 / 10 or less in the sixth partial region 16. This allows a high threshold voltage to be obtained (see FIG. 3). For example, the first hydrogen concentration is preferably 1 / 10 or less of the first carbon concentration in the sixth partial region 16.

[0025] In an embodiment, in the fifth partial region 15, the concentration ratio R1 is preferably 1 / 2 or more. For example, a low threshold voltage Vth can be obtained (see FIG. 3). A low on-resistance can be obtained. For example, the second hydrogen concentration is preferably 1 / 2 or more of the second carbon concentration in the fifth partial region 15.

[0026] In an embodiment, in the sixth partial region 16 and the fifth partial region 15, the carbon concentration may be substantially constant. For example, the ratio of the absolute value of the first difference between the first carbon concentration and the second carbon concentration to the second carbon concentration may be 0.2 or less.

[0027] In an embodiment, the second hydrogen concentration may be 5 times or more and 100 times or less of the first hydrogen concentration.

[0028] As shown in FIG. 1, the distance (first distance) along the first direction D1 between the first electrode 51 and the first electrode portion 53a is preferably shorter than the distance (second distance) along the first direction D1 between the first electrode portion 53a and the second electrode 52. High breakdown voltage is easily obtained. The first electrode 51 is a source electrode, and the second electrode 52 is a drain electrode.

[0029] In the semiconductor device 110, the second semiconductor region 20 may further include a second semiconductor portion 22. The direction from the fourth partial region 14 to the second semiconductor portion 22 is along the second direction D2.

[0030] The semiconductor device 110 may further include a first insulating member 41. At least a part of the first insulating member 41 is provided between the third electrode 53 and the semiconductor member 10M.

[0031] The semiconductor device 110 may further include a first compound member 45. The first compound member 45 contains Al z1 Ga 1-z1 N (0 < z1 ≦ 1). The composition ratio z1 may be, for example, 0.7 or more and 1 or less. The first compound member 45 may be, for example, an AlN layer. The first compound member 45 is provided between the semiconductor member 10M and the first insulating member 41. The first insulating member 41 contains, for example, silicon and oxygen.

[0032] The semiconductor device 110 may further include a second insulating member 42. The first semiconductor portion 21 is provided between the fifth partial region 15 and at least a part of the second insulating member 42 in the second direction D2. The second semiconductor portion 22 is provided between the fourth partial region 14 and at least a part of the second insulating member 42 in the second direction D2. The second insulating member 42 contains, for example, silicon and nitrogen. The first semiconductor portion 21 is protected by the second insulating member 42. A high breakdown voltage is easily obtained. Current collapse can be reduced.

[0033] 1, the semiconductor member 10M may include a base body 18s and a nitride layer 18b. The nitride layer 18b is provided between the base body 18s and the second semiconductor region 20. The first semiconductor region 10 is provided between the nitride layer 18b and the second semiconductor region 20. The base body 18s may include, for example, a silicon substrate. The nitride layer 18b may include Al, Ga, and N. The nitride layer 18b is, for example, a buffer layer.

[0034] FIG. 4 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. 4, in the semiconductor device 111 according to the embodiment, the shape of the sixth partial region 16 is different from that in the semiconductor device 110. Except for this, the configuration of the semiconductor device 111 may be the same as the configuration of the semiconductor device 110.

[0035] In the semiconductor device 111, a part of the sixth partial region 16 is located between the third partial region 13 and the first electrode portion 53a in the second direction D2. A high threshold voltage can be obtained more reliably. The leakage current during an off operation can be reduced.

[0036] The hydrogen concentration in the sixth partial region 16 (first hydrogen concentration) may be lower than the hydrogen concentration in the third partial region 13. When a high voltage is applied to the second electrode 52, the electric field in the sixth partial region 16 becomes strong. If the hydrogen concentration in the sixth partial region 16 is high, the strong electric field tends to break hydrogen bonds, causing hydrogen diffusion and making device operation unstable. If the hydrogen concentration is low, device operation tends to become stable. If the hydrogen concentration in the sixth partial region 16 is high, leakage current tends to increase. If the hydrogen concentration in the sixth partial region 16 is low, leakage current during off operation can be reduced.

[0037] FIG. 5 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. 5, in the semiconductor device 112 according to the embodiment, the first semiconductor region 10 further includes a seventh partial region 17. Except for this, the configuration of the semiconductor device 112 may be the same as the configuration of the semiconductor device 110 or the semiconductor device 111.

[0038] In the semiconductor device 112, the second semiconductor region 20 includes a second semiconductor portion 22. The direction from the fourth partial region 14 to the second semiconductor portion 22 is along the second direction D2. The direction from the seventh partial region 17 to the second semiconductor portion 22 is along the second direction D2.

[0039] At least a portion of the seventh partial region 17 is located between the fourth partial region 14 and the first electrode portion 53a in the first direction D1. The hydrogen concentration (third hydrogen concentration) in the seventh partial region 17 is lower than the hydrogen concentration (fourth hydrogen concentration) in the fourth partial region 14. A high threshold voltage and a low on-resistance are obtained.

[0040] For example, the third hydrogen concentration in the seventh partial region 17 is preferably 1 / 10 or less of the carbon concentration (third carbon concentration) in the seventh partial region 17. The fourth hydrogen concentration in the fourth partial region 14 is preferably 1 / 2 or more of the fourth carbon concentration in the fourth partial region 14. A high threshold voltage and a low on-resistance are easily obtained.

[0041] For example, the ratio of the second absolute value of the second difference between the third carbon concentration and the fourth carbon concentration to the fourth carbon concentration may be 0.2 or less.

[0042] In the semiconductor device 112, at least one of the sixth partial region 16 and the seventh partial region 17 may be provided between the third partial region 13 and the first electrode portion 53a.

[0043] In the semiconductor device 110, the semiconductor device 111, and the semiconductor device 112, the first electrode portion 53a is located between the second semiconductor portion 22 and the first semiconductor portion 21 in the first direction D1.

[0044] In the semiconductor devices 110, 111, and 112, the sixth partial region 16 overlaps with at least a portion of the third electrode 53 in the second direction D2. The fifth partial region 15 does not need to overlap with the third electrode 53 in the second direction D2.

[0045] FIG. 6 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. 6, in the semiconductor device 113 according to the embodiment, the position of the first electrode 51 in the Z-axis direction is different from that in the semiconductor device 110, etc. Except for this, the configuration of the semiconductor device 110 may be similar to the configuration of the semiconductor device 110, etc.

[0046] In the semiconductor device 113 as well, the first hydrogen concentration in the sixth partial region 16 is lower than the second hydrogen concentration in the fifth partial region 15. In the semiconductor device 113 as well, a high threshold voltage and a low on-resistance are obtained.

[0047] The semiconductor device 113 further includes a second insulating member 42. The first semiconductor portion 21 is provided between the fifth partial region 15 and at least a part of the second insulating member 42 in the second direction D2. The second insulating member 42 contains, for example, silicon and nitrogen. The first semiconductor portion 21 is protected by the second insulating member 42. A high breakdown voltage is easily obtained. Current collapse can be reduced.

[0048] (Second Embodiment) FIG. 7 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. As shown in FIG. 7, a semiconductor device 120 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, and a semiconductor member 10M. The third electrode 53 includes a first electrode portion 53a.

[0049] The semiconductor member 10M includes a first semiconductor region 10, a second semiconductor region 20, and a third semiconductor region 30. The first semiconductor region 10 contains Al x1 Ga 1-x1 N (0 ≦ x1 < 1). The first semiconductor region 10 may be, for example, a GaN layer. The first semiconductor region 10 contains carbon. The second semiconductor region 20 contains Al x2 Ga 1-x2 N (x1 < x2 ≦ 1). The second semiconductor region 20 may be, for example, an AlGaN layer. The third semiconductor region 30 contains Al x3 Ga 1-x3 N (0 ≦ x3 < 1). The third semiconductor region 30 may be, for example, a GaN layer. The third semiconductor region 30 contains silicon. The third semiconductor region 30 is n-type.

[0050] A second direction D2 from the second electrode 52 to the first electrode portion 53a intersects a first direction D1 from the first electrode 51 to the second electrode 52. The first direction D1 is, for example, the Z-axis direction. The second direction D2 is, for example, the X-axis direction.

[0051] For example, the first semiconductor region 10 is between the third semiconductor region 30 and the second semiconductor region 20 in the first direction D1.

[0052] The third semiconductor region 30 includes a first portion 31, a second portion 32, and a third portion 33. The direction from the first portion 31 to the second electrode 52 is along the first direction D1. The direction from the second portion 32 to the first electrode portion 53a is along the first direction D1.

[0053] The third portion 33 is located between the first portion 31 and the second portion 32. The position of the third portion 33 in the second direction D2 is between the position of the first portion 31 in the second direction D2 and the position of the second portion 32 in the second direction D2.

[0054] The first semiconductor region 10 includes a first partial region 11 and a second partial region 12. The first partial region 11 is located between the second partial region 12 and the first electrode portion 53a in the second direction D2. The first partial region 11 and the second partial region 12 are located between the third portion 33 and the second semiconductor region 20 in the first direction D1.

[0055] The first hydrogen concentration in the first partial region 11 is lower than the second hydrogen concentration in the second partial region 12. For example, a high threshold value can be obtained in the first partial region 11 due to the first partial region 11 having a low hydrogen concentration. On the other hand, a low on-resistance can be obtained due to the second partial region 12 having a high hydrogen concentration. In the embodiment, a high threshold value and a low on-resistance can be obtained. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0056] The semiconductor device 120 may further include a first insulating member 41. At least a portion of the first insulating member 41 is provided between the third electrode 53 and the semiconductor member 10M.

[0057] The semiconductor device 120 may further include a fourth semiconductor region 30D. The fourth semiconductor region 30D is provided between the first electrode 51 and the third semiconductor region 30. The concentration of silicon in the fourth semiconductor region 30D is higher than the concentration of silicon in the third semiconductor region 30. The third semiconductor region 30 may be, for example, n - The fourth semiconductor region 30D is, for example, an n + This layer provides a lower on-resistance.

[0058] FIG. 8 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. As shown in FIG. 8, in the semiconductor device 121 according to the embodiment, the first semiconductor region 10 includes a third partial region 13. The configuration of the semiconductor device 121 except this may be the same as the configuration of the semiconductor device 120.

[0059] In the semiconductor device 121, the third partial region 13 is between the first partial region 31 and the first electrode 51 in the first direction D1. The third hydrogen concentration in the third partial region 13 is lower than the second hydrogen concentration in the second partial region 12. For example, between the second electrode 52 and the first semiconductor region 10, it is easy to obtain a low leakage current. The operation at the time of switching is likely to be stable.

[0060] (Third Embodiment) The third embodiment relates to a method for manufacturing a semiconductor device. FIGS. 9(a) to 9(f) are schematic cross-sectional views illustrating a method for manufacturing a semiconductor device according to the third embodiment. As shown in FIG. 9(a), a semiconductor member 10M is prepared. The semiconductor member 10M includes a first semiconductor region 10 and a second semiconductor region 20. The first semiconductor region 10 contains Al x1 Ga 1-x1 N (0 ≦ x1 < 1). The first semiconductor region 10 contains hydrogen and carbon. The second semiconductor region 20 contains Al x2 Ga 1-x2 N (x1 < x2 ≦ 1). For example, the second semiconductor region 20 is provided on the first semiconductor region 10.

[0061] As shown in FIG. 9(b), a second insulating member 42 (for example, a protection layer) may be provided on the second semiconductor region 20.

[0062] As shown in FIG. 9(c), a part of the hydrogen contained in the first region p1 of the first semiconductor region 10 is removed. For example, by local heating by laser irradiation, a part of the hydrogen contained in the first region p1 is removed. The hydrogen contained in the second region p2 of the first semiconductor region 10 is not substantially removed.

[0063] As a result, as shown in FIG. 9(d), a plurality of regions with different hydrogen concentrations are formed. The hydrogen concentration in the first region p1 can be made lower than the hydrogen concentration in the second region p2 in the second semiconductor region 10 of the first semiconductor region 10.

[0064] As shown in FIG. 9(e), a part of the second semiconductor region 20 and a part of the second region p2 are removed to form a concave portion 10d.

[0065] As shown in FIG. 9(f), an electrode 50E is formed in the concave portion 10d. Before forming the electrode 50E, a first insulating member 41 may be formed in the concave portion 10d. The electrode 50E becomes, for example, the third electrode 53. Further, by forming the first electrode 51 and the second electrode 52, for example, the semiconductor device 110 is obtained.

[0066] FIGS. 10(a) to 10(e) are schematic cross-sectional views illustrating a method of manufacturing a semiconductor device according to the third embodiment. As shown in FIG. 10(a), a semiconductor member 10M is prepared. The semiconductor member 10M includes a first semiconductor region 10 and a second semiconductor region 20. The first semiconductor region 10 contains Al x1 Ga 1-x1 N (0 ≦ x1 < 1). The first semiconductor region 10 contains hydrogen and carbon. The second semiconductor region 20 contains Al<s>0000027< / s>Ga 1-x2 N (x1 < x2 ≦ 1). For example, the second semiconductor region 20 is provided on the first semiconductor region 10.

[0067] As shown in FIG. 10(b), a second insulating member 42 (for example, a protective layer) may be provided on the second semiconductor region 20.

[0068] As shown in FIG. 10(c), a part of the second semiconductor region 20 and a part of the first semiconductor region 10 are removed to form a concave portion 10d. A first insulating member 41 may be formed inside the concave portion 10d.

[0069] Please note that there seems to be an error in the original text where <s>0000027< / s> is present. It's not clear what this is supposed to be. The translation has been done as accurately as possible based on the provided text.10(d), an electrode 50E is formed in the recess 10d and in a part of the second semiconductor region 20. The first semiconductor region 10 includes a first region p1 that overlaps with the electrode 50E and a second region p2 that does not overlap with the electrode 50E.

[0070] 10(e), hydrogen is introduced into the semiconductor member 10M using the electrode 50E as a mask. For example, ion implantation is performed. This allows the first region hydrogen concentration in the first region p1 to be lower than the second region hydrogen concentration in the second region p2.

[0071] In an embodiment, information about the shape of the semiconductor region can be obtained by, for example, electron microscope observation. Information about the composition and element concentration in the semiconductor region can be obtained by, for example, energy dispersive X-ray spectroscopy (EDX) or secondary ion mass spectrometry (SIMS). Information about the composition in the semiconductor region can be obtained by, for example, reciprocal space mapping.

[0072] The embodiments may include the following technical solutions. (Technical proposal 1) A first electrode; a second electrode, the direction from the first electrode to the second electrode being along a first direction; a third electrode including a first electrode portion, wherein a position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction; A semiconductor member; The semiconductor member comprises: Al x1 Ga 1-x1A first semiconductor region containing N(0≦x1<1) and containing carbon, wherein the first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region. The direction from the first partial region to the first electrode is along a second direction intersecting the first direction. The direction from the second partial region to the second electrode is along the second direction. The direction from the third partial region to the first electrode portion is along the second direction. The fourth partial region is between the first partial region and the third partial region. The fifth partial region is between the third partial region and the second partial region. At least a part of the sixth partial region is between the first electrode portion and the fifth partial region in the first direction. The first hydrogen concentration in the sixth partial region is lower than the second hydrogen concentration in the fifth partial region. The first semiconductor region and, Al x2 Ga 1-x2 A second semiconductor region containing N(x1<x2≦1), wherein the second semiconductor region includes a first semiconductor part. The direction from the fifth partial region to the first semiconductor part is along the second direction. The second semiconductor region and, A semiconductor device including.

[0073] (Technical solution 2) The semiconductor device according to Technical solution 1, wherein the first hydrogen concentration is 1 / 10 or less of the first carbon concentration in the sixth partial region.

[0074] (Technical solution 3) The semiconductor device according to Technical solution 2, wherein the second hydrogen concentration is 1 / 2 or more of the second carbon concentration in the fifth partial region.

[0075] (Technical solution 4) The semiconductor device according to Technical solution 3, wherein the ratio of the absolute value of the first difference between the first carbon concentration and the second carbon concentration to the second carbon concentration is 0.2 or less.

[0076] (Technical solution 5) The semiconductor device according to any one of Technical solutions 1 to 4, wherein the second hydrogen concentration is 5 times or more of the first hydrogen concentration.

[0077] (Technical proposal 6) A semiconductor device described in any one of Technical Solutions 1 to 5, wherein a first distance along the first direction between the first electrode and the first electrode portion is shorter than a second distance along the first direction between the first electrode portion and the second electrode.

[0078] (Technical proposal 7) The semiconductor device according to any one of Technical Solutions 1 to 6, wherein a part of the sixth partial region is located between the third partial region and the first electrode portion in the second direction.

[0079] (Technical proposal 8) the second semiconductor region further includes a second semiconductor portion; The semiconductor device according to any one of Technical Solutions 1 to 7, wherein the direction from the fourth partial region to the second semiconductor portion is along the second direction.

[0080] (Technical proposal 9) the first semiconductor region further includes a seventh partial region; at least a portion of the seventh partial region is located between the fourth partial region and the first electrode portion in the first direction; The semiconductor device according to Technical Solution 8, wherein the third hydrogen concentration in the seventh partial region is lower than the fourth hydrogen concentration in the fourth partial region.

[0081] (Technical proposal 10) The semiconductor device according to Technical Proposal 9, wherein the third hydrogen concentration is 1 / 10 or less of the third carbon concentration in the seventh partial region.

[0082] (Technical proposal 11) The semiconductor device according to Technical Proposal 10, wherein the fourth hydrogen concentration is equal to or greater than half of the fourth carbon concentration in the fourth partial region.

[0083] (Technical proposal 12) The semiconductor device according to Technical Solution 11, wherein a ratio of a second absolute value of a second difference between the third carbon concentration and the fourth carbon concentration to the fourth carbon concentration is 0.2 or less.

[0084] (Technical Solution 13) The first electrode portion is between the second semiconductor portion and the first semiconductor portion in the first direction, and is the semiconductor device according to any one of Technical Solutions 8 to 12.

[0085] (Technical Solution 14) Further comprising a first insulating member, At least a part of the first insulating member is provided between the third electrode and the semiconductor member, and is the semiconductor device according to any one of Technical Solutions 1 to 13.

[0086] (Technical Solution 15) Al z1 Ga 1-z1 Further comprising a first compound member containing N(0 < z1 ≦ 1), The first compound member is provided between the semiconductor member and the first insulating member, and is the semiconductor device according to Technical Solution 14.

[0087] (Technical Solution 16) Further comprising a second insulating member, The first semiconductor portion is provided between the fifth partial region and at least a part of the second insulating member in the second direction, and is the semiconductor device according to Technical Solution 14 or 15.

[0088] (Technical Solution 17) A first electrode, A second electrode, A third electrode including the first electrode portion, A semiconductor member, Comprising, the semiconductor member is Al x1 Ga 1-x1 Containing N(0 ≦ x1 < 1) and including a first semiconductor region containing carbon, Al x2 Ga 1-x2 Containing N(x1 < x2 ≦ 1) and including a second semiconductor region, Al x3 Ga 1-x3 Containing N(0 ≦ x3 < 1) and including a third semiconductor region containing silicon, Including, The second direction from the second electrode to the first electrode portion intersects the first direction from the first electrode to the second electrode, The third semiconductor region includes a first portion, a second portion, and a third portion, The direction from the first portion to the second electrode is along the first direction, The direction from the second portion to the first electrode portion is along the first direction, The third portion is between the first portion and the second portion, The first semiconductor region includes a first partial region and a second partial region, The first partial region is between the second partial region and the first electrode portion in the second direction, The first partial region and the second partial region are between the third portion and the second semiconductor region in the first direction, A semiconductor device in which a first hydrogen concentration in the first partial region is lower than a second hydrogen concentration in the second partial region.

[0089] (Technical Proposal 18) The first semiconductor region further includes a third partial region, The third partial region is between the first portion and the first electrode in the first direction, The semiconductor device according to Technical Proposal 17, in which a third hydrogen concentration in the third partial region is lower than the second hydrogen concentration.

[0090] (Technical Proposal 19) Al x1 Ga 1-x1 A first semiconductor region containing N(0≦x1<1) and containing hydrogen and carbon, and Al x2 Ga 1-x2 Prepare a semiconductor member including a second semiconductor region containing N(x1<x2≦1), Remove a part of the hydrogen contained in the first region of the first semiconductor region, and make the first region hydrogen concentration in the first region lower than the second region hydrogen concentration in the second region of the first semiconductor region, A method of manufacturing a semiconductor device, comprising removing a part of the second semiconductor region and a part of the second region to form a recess, and forming an electrode in the recess.

[0091] (Technical proposal 20) Al x1 Ga 1-x1 A first semiconductor region containing N(0≦x1<1) and containing hydrogen and carbon, and Al x2 Ga 1-x2 A second semiconductor region containing N(x1<x2≦1), and preparing a semiconductor member including the same, Removing a part of the second semiconductor region and a part of the first semiconductor region to form a recess, Forming an electrode in the recess and a part of the second semiconductor region, wherein the first semiconductor region includes a first region overlapping the electrode and a second region not overlapping the electrode, Introducing hydrogen into the semiconductor member using the electrode as a mask, and making a first region hydrogen concentration in the first region lower than a second region hydrogen concentration in the second region, a method of manufacturing a semiconductor device.

[0092] According to an embodiment, a semiconductor device and a method of manufacturing the same capable of improving characteristics are provided.

[0093] In this specification, the "electrically connected state" includes a state in which a plurality of conductors are physically in contact and an electric current flows between these plurality of conductors. The "electrically connected state" includes a state in which another conductor is inserted between a plurality of conductors and an electric current flows between these plurality of conductors.

[0094] As described above, embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configuration of each element such as an electrode, a semiconductor member, a semiconductor region, and a substrate included in the semiconductor device, the present invention can be similarly implemented by appropriately selecting from the range known to those skilled in the art, and as long as the same effects can be obtained, it is included in the scope of the present invention.

[0095] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0096] In addition, all semiconductor devices and manufacturing methods thereof that can be implemented by a person skilled in the art by making appropriate design modifications based on the semiconductor device and manufacturing method thereof described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0097] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and these modifications and alterations are also considered to fall within the scope of the present invention.

[0098] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0099] 10, 20, 30: first, second, third semiconductor regions, 10M: semiconductor member, 10d: recess, 11-17: first to seventh partial regions, 18b: nitride layer, 18s: base, 21, 22: first and second semiconductor portions, 30D: fourth semiconductor region, 31-33: first to third portions, 41, 42: first and second insulating members, 45: first compound member, 50E: electrode, 51-53: first to third electrodes, 53a: first electrode portion, 110-113, 120, 121: semiconductor device, CC: carbon concentration, D1-D3: first to third directions, R1: concentration ratio, Vth: threshold voltage, p1, p2: first and second regions

Claims

1. A first electrode; a second electrode, the direction from the first electrode to the second electrode being along a first direction; a third electrode including a first electrode portion, wherein a position of the first electrode portion in the first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction; A semiconductor member; The semiconductor member comprises: Al ｘ１ Ga １－ｘ１ a first semiconductor region containing carbon and containing N (0≦x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, a direction from the first partial region to the first electrode along a second direction intersecting the first direction, a direction from the second partial region to the second electrode along the second direction, a direction from the third partial region to the first electrode portion along the second direction, the fourth partial region being between the first partial region and the third partial region, the fifth partial region being between the third partial region and the second partial region, at least a part of the sixth partial region being between the first electrode portion and the fifth partial region in the first direction, and a first hydrogen concentration in the sixth partial region being lower than a second hydrogen concentration in the fifth partial region; Al ｘ２ Ga １－ｘ２ N (x1<x2≦1), the second semiconductor region including a first semiconductor portion, and a direction from the fifth sub-region to the first semiconductor portion along the second direction; 10. A semiconductor device comprising:

2. 2. The semiconductor device according to claim 1, wherein the first hydrogen concentration is equal to or less than 1 / 10 of the first carbon concentration in the sixth partial region.

3. 3. The semiconductor device according to claim 2, wherein the second hydrogen concentration is equal to or greater than half of the second carbon concentration in the fifth partial region.

4. 2. The semiconductor device according to claim 1, wherein a first distance along the first direction between the first electrode and the first electrode portion is shorter than a second distance along the first direction between the first electrode portion and the second electrode.

5. the second semiconductor region further includes a second semiconductor portion; The semiconductor device according to claim 1 , wherein a direction from the fourth region to the second semiconductor region is along the second direction.

6. the first semiconductor region further includes a seventh partial region; at least a portion of the seventh partial region is located between the fourth partial region and the first electrode portion in the first direction; 6. The semiconductor device according to claim 5, wherein the third hydrogen concentration in the seventh partial region is lower than the fourth hydrogen concentration in the fourth partial region.

7. The semiconductor device according to claim 5 , wherein the first electrode portion is located between the second semiconductor portion and the first semiconductor portion in the first direction.

8. A first electrode; A second electrode; a third electrode including a first electrode portion; A semiconductor member; The semiconductor member comprises: Al ｘ１ Ga １－ｘ１ a first semiconductor region containing N (0≦x1<1) and containing carbon; Al ｘ２ Ga １－ｘ２ a second semiconductor region including N (x1<x2≦1); Al ｘ３ Ga １－ｘ３ N (0≦x3<1), and a third semiconductor region including silicon; Including, a second direction from the second electrode to the first electrode portion intersects with a first direction from the first electrode to the second electrode; the third semiconductor region includes a first portion, a second portion, and a third portion; a direction from the first portion to the second electrode is along the first direction; a direction from the second portion to the first electrode portion is along the first direction; the third portion is between the first portion and the second portion; the first semiconductor region includes a first partial region and a second partial region; the first partial region is located between the second partial region and the first electrode portion in the second direction; the first partial region and the second partial region are located between the third portion and the second semiconductor region in the first direction; A semiconductor device, wherein a first hydrogen concentration in the first partial region is lower than a second hydrogen concentration in the second partial region.

9. Al ｘ１ Ga １－ｘ１ a first semiconductor region containing N (0≦x1<1) and containing hydrogen and carbon; and ｘ２ Ga １－ｘ２ N (x1<x2≦1), and a second semiconductor region including N (x1<x2≦1), removing a portion of hydrogen contained in a first region of the first semiconductor region to make the first region hydrogen concentration in the first region lower than the second region hydrogen concentration in the second region of the first semiconductor region; a second semiconductor region and a portion of the second region are removed to form a recess, and an electrode is formed in the recess.

10. Al ｘ１ Ga １－ｘ１ a first semiconductor region containing N (0≦x1<1) and containing hydrogen and carbon; and ｘ２ Ga １－ｘ２ N (x1<x2≦1), and a second semiconductor region including N (x1<x2≦1), a recess formed by removing a portion of the second semiconductor region and a portion of the first semiconductor region; an electrode is formed in the recess and a part of the second semiconductor region, the first semiconductor region including a first region overlapping with the electrode and a second region not overlapping with the electrode; A method for manufacturing a semiconductor device, comprising: introducing hydrogen into the semiconductor member using the electrode as a mask; and making a first region hydrogen concentration in the first region lower than a second region hydrogen concentration in the second region.

Images