System and method for monitoring characteristic parameter of semiconductor device in illumination scenario

Abstract

SOLUTION: To provide a system related to semiconductor irradiation, and semiconductor characteristic parameter test fields which includes a drain test unit, a gate test unit, a characteristic parameter monitoring unit, a drive unit, an information processing control unit and an information transmission unit provided on each of an irradiation protection unit a and an irradiation protection unit b, each of the drain test unit and the gate test unit being transmitting a test signal to a measurement object semiconductor device, and monitoring change in a characteristic parameter of a test object semiconductor device under an irradiation condition through the characteristic parameter monitoring unit and the information processing control unit.EFFECT: There are advantages such that characteristic parameters of a plurality of semiconductor devices under different irradiation conditions of long-distance intelligent monitoring can be achieved without requiring a tester to go in and out during irradiation, operation is easy, a volume is small, tens of thousands of tests are achieved in the device, test results are obtained quickly and accurately, and the operation state of the device can be determined.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to the technical field of semiconductor irradiation and semiconductor characteristic parameter testing, and more particularly to a system and method for monitoring characteristic parameters of semiconductor devices under irradiation scenarios. [Background technology]

[0002] Third-generation semiconductor gallium nitride (GaN)-based power devices boast significant performance advantages over conventional Si-based semiconductor devices, including a wide bandgap, strong breakdown field strength, and fast saturated drift velocity. These advantages offer excellent application potential in high-frequency, high-power, high-temperature, and high-pressure applications. At the same time, their excellent material properties give these devices favorable application advantages in key fields such as aerospace, nuclear physics, and the defense and military industries. However, in irradiation application scenarios such as aerospace, many issues remain regarding the irradiation performance and operational stability of GaN power devices. For example, devices face challenges such as performance degradation and even burnout under irradiation. Furthermore, the unique irradiation environment makes it difficult to monitor the device's operating status and degradation. Therefore, there is an urgent need to develop technology for monitoring the characteristic parameters of GaN power devices under irradiation.

[0003] Because the radiation testing environment can cause serious harm to the human body, and the residual radiation on the irradiated device can also cause harm to human health, the device under test cannot be removed from the radiation environment in a timely manner, which affects related research work and results in problems such as low accuracy and unreliable test data. In addition, to prevent the experimental monitoring equipment from being affected by the radiation source, the monitoring equipment must be located far away from the radiation source, which limits the number of devices under test and makes it impossible to simultaneously monitor different operating states of the devices, affecting test efficiency and test accuracy. In addition, the tester cannot enter the radiation environment during the experimental process and can only test one device under test. In addition, the test system is complex and large in volume, which ultimately affects the test results.

[0004] To solve the above problems, it is urgent to design a technology for monitoring the characteristic parameters of semiconductor devices under irradiation scenarios, which can solve the difficult problems such as the inability to monitor the characteristic parameters of semiconductor devices under test in real time at close range, the complexity of the test circuit system, and the inaccessibility of testers, resulting in a small number of devices under test, low test efficiency, and low test accuracy. Summary of the Invention [Problem to be solved by the invention]

[0005] In response to the shortcomings of current irradiation monitoring technology systems, such as complicated operation, large volume, small number of test devices, low efficiency, inaccurate test results, and inaccessible workers, the present invention proposes a system and method for monitoring characteristic parameters of semiconductor devices under irradiation scenarios, to realize accurate and rapid monitoring of characteristic parameters of up to 10,000 devices under irradiation. [Means for solving the problem]

[0006] In order to achieve the above object, a system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios is designed according to the present invention, which is used to measure characteristic parameters of a plurality of semiconductor devices under test, the monitoring system comprising: a drain test unit, a gate test unit, a characteristic parameter monitoring unit, a driving unit, an information processing control unit and an information transmission unit, wherein the characteristic parameter monitoring unit includes a monitoring circuit and an output circuit; the drain test unit, the gate test unit, the monitoring circuit of the characteristic parameter monitoring unit and the semiconductor device under test are disposed in an irradiation protection unit a covered with an outer layer of a metal material, the output circuit of the characteristic parameter monitoring unit, the driving unit and the information processing control unit are disposed in an irradiation protection unit b covered with an outer layer of an irradiation-resistant material, and the irradiation protection unit a and the irradiation protection unit b are both exposed to an irradiation environment and connected by a buckle; the drain test unit is connected to the drain of the semiconductor device under test, the gate test unit is connected to the gate of the semiconductor device under test, and the monitoring circuit of the characteristic parameter monitoring unit has one end connected to the drain of the semiconductor device under test and the other end connected to the source of the semiconductor device under test, and is used to send test signals to the drain and gate of the semiconductor device under test and receive monitoring status information of the semiconductor device under test; The driving unit is used to drive the drain test unit and the gate test unit to start the test, and the characteristic parameter monitoring unit has a monitoring circuit that receives and amplifies monitoring status information, which is then received by an output circuit and transmitted to an information processing control unit, which receives the monitoring status information, forms monitoring parameters corresponding to the status of the semiconductor device under test, and remotely transmits them to an information transmission unit, and the information transmission unit transmits the monitoring parameters of all the semiconductor devices under test to an external system.

[0007] In addition, the number of gate test units, characteristic parameter monitoring units, and semiconductor devices under test in one radiation protection unit a is the same and is m, where m is a multiple of 10, and every 10 semiconductor devices under test are docked to the same drain test unit.

[0008] Furthermore, there are several radiation protection units a, and in each radiation protection unit a, the drains of all the semiconductor devices under test are connected in series and the gates are connected in series.

[0009] Furthermore, the characteristic parameter monitoring unit includes two photoelectric couplers, wherein the monitoring circuit of the characteristic parameter monitoring unit includes a monitoring capacitor, a current amplifier, and input terminals of the two photoelectric couplers, one end of the monitoring capacitor is connected to the drain of the semiconductor device under test, and the other end passes through a current amplifier and is connected to the input terminals of the two opposite-direction photoelectric couplers, and then is connected to the source of the semiconductor device under test, and the output circuit of the characteristic parameter monitoring unit includes the output terminals of the two photoelectric couplers, two latches, a red LED, and a green LED; When the semiconductor device under test is turned off, the monitoring capacitor is charged to form a charging current, which passes through a current amplifier and then enters two photoelectric couplers, driving one of the photoelectric couplers and a red LED to emit light, and at the same time, a latch maintains the red LED emitting light; When the semiconductor device under test is short-circuited, the monitoring capacitor is discharged to form a discharge current, which passes through a current amplifier and then enters the two photoelectric couplers, driving the other photoelectric coupler and the green LED to emit light, while the latch maintains the green LED emitting light.

[0010] Furthermore, the gate test unit and the drain test unit have the same structure, including a phototransistor and a PMOS tube, and when the phototransistor receives a signal, it turns on, and the PMOS tube turns on, outputting a gate voltage or a drain voltage to the semiconductor device under test.

[0011] Furthermore, the radiation protection unit a also includes a circuit restoration unit, the circuit restoration unit includes a microampere level constant current circuit, a high-voltage electromagnetic switch and an equivalent circuit, the high-voltage electromagnetic switch has a normally closed end connected to the drain of the semiconductor device under test, a normally open end connected to the equivalent circuit, and a common end connected to the microampere level constant current circuit and the drain test unit; When the information processing control unit detects that the semiconductor device under test is in an off state or a short-circuit state under irradiation conditions, the driving unit drives and operates the circuit restoration unit, thereby disconnecting the drain of the semiconductor device under test from the monitoring circuit and connecting the equivalent circuit to the monitoring circuit.

[0012] Further, the information processing control unit includes an FPGA chip and a Bluetooth module, and the FPGA chip controls the driving unit to send driving commands to the drain test unit, the gate test unit, and the high-voltage electromagnetic switch based on the monitoring status information of the semiconductor device under test received from the latch, and the Bluetooth module remotely transmits the monitoring parameters of the semiconductor device under test to the information transmission unit, and the information transmission unit receives the monitoring parameters via the Bluetooth module, stores them locally, and transmits them to an external system via a network.

[0013] Furthermore, the driving circuit is realized by a photoelectric coupler, and the input terminal and output terminal of the photoelectric coupler are respectively provided on the radiation protection unit a and the radiation protection unit b, both of which are located at the buckle connection part.

[0014] The present invention further provides a method for monitoring characteristic parameters of a semiconductor device under an irradiation scenario, realized on the basis of the above system, said method comprising: Step S1: all semiconductor devices to be tested, drain test units, gate test units, characteristic parameter monitoring units, drive units, and information processing control units are arranged in an irradiation protection unit a and an irradiation protection unit b, respectively, and both are placed in an irradiation chamber; Step S2 of establishing communication between the tester, the external system, and the information processing control unit via a remote connection; Step S3: the tester sends a control command to the information processing control unit, and the information processing control unit turns on the gate test unit and the drain test unit through the driving unit, and the tester observes whether the red LED of the characteristic parameter monitoring unit is lit, if it is lit, the monitoring circuit operates normally, and then controls the information processing control unit to reset the latch, and if it is observed that the red LED is off, the irradiation source can be turned on and monitored; Step S4: inputting a preset drain bias voltage and a gate voltage, turning on the irradiation source, the characteristic parameter monitoring unit starts to operate, and when all the semiconductor devices under test operate normally, the state of the characteristic parameter monitoring unit does not change; Step S5: if a semiconductor device under test is faulty under irradiation and is in off state A or short-circuit state B, the corresponding red LED or green LED will light up, at this time the information processing control unit will transmit the monitoring parameters to the information transmission unit, and then the tester will check through the external system whether the red LED or green LED displayed at the location of the corresponding semiconductor device under test is lighted up, and the information processing control unit will selectively control the driving circuit of the corresponding circuit restoration unit to connect the corresponding equivalent circuit to the monitoring module; If the tester does not enter the irradiation chamber and does not touch the irradiated devices, the method includes step S6 of simultaneously monitoring the operating status of all the semiconductor devices under test under irradiation conditions, thereby determining the irradiation resistance of the semiconductor devices under test.

[0015] Preferably, in step S1, 100 semiconductor devices under test are arranged in the irradiation protection unit a according to a 10*10 matrix, and the 100 irradiation protection units a are placed in the irradiation chamber at the same time, and the tester simultaneously detects the characteristic parameters of the 10,000 semiconductor devices under test.

[0016] The system for monitoring the characteristic parameters of semiconductor devices under irradiation scenarios designed according to the present invention realizes the connection of multiple characteristic parameter monitoring units by serially connecting multiple irradiation protection units a according to the needs of the number of semiconductor devices under test, while at the same time maintaining the circuit complexity of the characteristic parameter monitoring unit provided in the irradiation protection unit b, thereby facilitating the tester to simultaneously monitor up to 10,000 semiconductor devices under test, solving the problems of not being able to replace devices during irradiation, the complexity of existing monitoring systems, and the small number of semiconductor devices under test. The present invention uses the charging and discharging status of the monitoring capacitor in the monitoring circuit to monitor the operating states (off state A, short-circuit state B, normal state C) of the 10,000 semiconductor devices under test, while simultaneously using photoelectric couplers and red and green LEDs to provide feedback on the operating states, thereby improving testing efficiency.

[0017] The beneficial effects of the present invention include the following: 1. The present invention achieves electrical and spatial isolation between the drain test unit, gate test unit and their corresponding driving circuits, avoiding mutual interference and meeting the requirements of using semiconductor devices under test with different gate voltages and / or different drain voltages in practical applications.

[0018] 2. The circuit restoration unit designed according to the present invention can restore any of the semiconductor devices under test in the monitoring module that are in an off state or short-circuit state after irradiation to the normal operating state of the circuit, and during the restoration process, a microampere-level constant current regulator keeps the circuit current unchanged, thereby avoiding any impact on other normal devices under test.

[0019] 3. The characteristic parameter conversion unit designed according to the present invention can intuitively monitor the state (off state A, short-circuit state B, normal state C) of the semiconductor device under test after irradiation, and transmits the change in the characteristic parameters of the semiconductor device under test to the information transmission unit via the information processing control unit, thereby facilitating the tester to directly obtain the experimental data remotely and analyze the damage state of the semiconductor device under test.

[0020] 4. To ensure that the irradiation environment only affects the semiconductor device under test and to avoid damage to the monitoring system caused by irradiation, the entire monitoring system is divided into irradiation protection unit a and irradiation protection unit b. The material coated on irradiation protection unit a prevents impurity particles from affecting the semiconductor device under test during irradiation, and the material coated on irradiation protection unit b prevents the internal components from being affected by the irradiation source. Different protective materials can be selected according to the type of irradiation source.

[0021] 5. This system has the advantages of easy operation, small volume, large number of tests, accurate and fast test results, and accurate judgment of the device's operating status. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a schematic diagram of the overall architecture of a system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios of the present invention; [Figure 2] 1 is a circuit structure diagram of a system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios of the present invention; [Figure 3] FIG. 1 is a schematic diagram of the circuit structure inside the radiation protection unit a. [Figure 4] FIG. 10 is a schematic diagram of the circuit structure inside the radiation protection unit b. [Figure 5] FIG. 2 is a structural diagram of the output circuit of the characteristic parameter monitoring unit; [Figure 6] FIG. 2 is a circuit diagram of a drive unit. [Figure 7] 1 is a flow chart of a method for monitoring characteristic parameters of a semiconductor device under an irradiation scenario according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0023] The present invention will now be described in more detail with reference to the drawings and specific examples.

[0024] The system for monitoring characteristic parameters of a semiconductor device under irradiation scenarios according to the present invention comprises a drain test unit, a gate test unit, a characteristic parameter monitoring unit, a driving unit, an information processing control unit and an information transmission unit, as shown in FIG.

[0025] the characteristic parameter monitoring unit includes a monitoring circuit and an output circuit, the drain test unit is connected to the drain of the semiconductor device under test, the gate test unit is connected to the gate of the semiconductor device under test, the monitoring circuit of the characteristic parameter monitoring unit has one end connected to the drain of the semiconductor device under test and the other end connected to the source of the semiconductor device under test, and is used to respectively transmit test signals to the drain and gate of the semiconductor device under test and receive monitoring status information of the semiconductor device under test; The driving unit is used to drive the drain test unit and the gate test unit to start the test, and the characteristic parameter monitoring unit has a monitoring circuit that receives and amplifies the monitoring status information, which is then received by an output circuit and transmitted to the information processing control unit, which receives the monitoring status information, converts the status of the corresponding semiconductor device under test into monitoring parameters, and remotely transmits them to the information transmission unit, which transmits the monitoring parameters of all the semiconductor devices under test to an external system. The tester's remote computer receives the operating status information of the semiconductor device under test at the corresponding position transmitted from the information processing control unit, and displays and monitors it using accompanying software.

[0026] As shown in Figure 2, to protect the core circuits in the monitoring module from being affected by radiation and ensure that radiation only affects the semiconductor device under test, the entire monitoring module is divided into two radiation protection units: radiation protection unit a and radiation protection unit b. The unit circuits in radiation protection unit a include the semiconductor device under test, the monitoring circuit in the characteristic parameter monitoring unit, the circuit restoration unit, the drain test unit, and the gate test unit, while radiation protection unit b includes the drive circuits for the gate and drain test units of the semiconductor device under test, the output circuit of the optocoupler in the characteristic parameter monitoring unit, the drive circuit for the circuit restoration unit, and the FPGA chip of the information processing control unit. The radiation protection units a and b enable modular isolation and protection of each unit in the monitoring system, reducing the volume and ease of operation of the monitoring system while ensuring that radiation only affects the semiconductor device under test.

[0027] The monitoring system is composed of n (1, 2, 3...N) monitoring modules, each of which includes 10 drain test units, 100 gate test units, 100 circuit restoration units, 100 characteristic parameter detection and conversion units, one information processing control unit, one driving unit, one information transmission unit, one radiation protection unit a, and one radiation protection unit b. When the number of modules is one, one drain power supply and one gate power supply are required around the radiation protection unit, and radiation testing can be performed on up to 100 semiconductor devices under test. When the number of modules is more than one, the drain of radiation protection unit a can be directly connected, or the gate of radiation protection unit a can be directly connected. In this way, by simply adding one drain power supply or one gate power supply, the operating states of 200 semiconductor devices under test irradiated at different gate voltages and / or different drain voltages can be monitored, thereby achieving the goals of reducing the volume of the irradiation system, simplifying the circuit layout, and reducing operation difficulty. Similarly, to monitor 10,000 semiconductor devices, it is sufficient to arrange 100 semiconductor devices under test in a 10*10 matrix, connect the drains in series, and connect the gates in series. In this case, only 10 drain voltage sources and 10 gate voltage sources are required, and the difficulty and volume of building the monitoring system will not increase.

[0028] When the signal from the information processing control unit is transmitted to the drain test unit and the gate test unit located in the radiation protection unit b, the corresponding driving units drive the corresponding drain and gate switches to be in an operating state, thereby realizing electrical isolation and spatial isolation in the circuit between the drain test unit, the gate test unit and their driving circuits, avoiding mutual interference, and also meeting the requirements for using the semiconductor device under test at different gate voltages and / or different drain voltages in actual practical applications.

[0029] The characteristic parameter conversion unit is used to monitor the state (off state A, short-circuit state B, normal state C) of the semiconductor device under test after irradiation, and transmits the change in the characteristic parameters of the semiconductor device under test to the information transmission unit via the information processing control unit, which makes it easy for the tester to directly obtain experimental data remotely and analyze the damage state of the semiconductor device under test.

[0030] The monitoring circuit of the characteristic parameter monitoring unit provided in the radiation protection unit a includes a monitoring capacitor, a current amplifier, and input terminals of two photoelectric couplers, one end of the monitoring capacitor being connected to the drain of the semiconductor device under test, and the other end passing through the current amplifier and connected to the input terminals of the two opposite-direction photoelectric couplers, and then connected to the source of the semiconductor device under test.

[0031] The output circuit of the characteristic parameter monitoring unit in the radiation protection unit b includes two photoelectric coupler output terminals, two latches, a red LED and a green LED.

[0032] The circuit restoration unit includes a microampere-level constant current circuit, a high-voltage electromagnetic switch, and an equivalent circuit. The high-voltage electromagnetic switch has a normally closed end connected to the drain of the semiconductor device under test, a normally open end connected to the equivalent circuit, and a common end connected to the microampere-level constant current circuit and the drain test unit. When the device under test is in the on state C under irradiation, the circuit restoration unit does not operate. When the device under test is in the off state A or the short-circuit state B under irradiation, the corresponding red LED or green LED lights up. The information processing control unit controls the driving circuit of the circuit restoration unit to drive the high-voltage electromagnetic switch to operate, thereby disconnecting the drain of the semiconductor device under test from the monitoring circuit and connecting the equivalent circuit to the monitoring circuit. Thus, the entire circuit system is restored to the irradiated but undestroyed state C. During the restoration process, the microampere-level constant current regulator keeps the circuit current unchanged.

[0033] Specifically, as shown in Figure 3, the gate of the semiconductor device under test (DUTa1) is connected to the gate test unit. When the information processing control unit transmits a drive signal for the gate test unit, the phototransistor receives the signal and turns on, which in turn turns on the PMOS transistor in the gate test unit, thereby transmitting the appropriate gate voltage to DUTa1. The drain of DUTa1 is connected to the normally closed end of a high-voltage electromagnetic switch, the normally open end of which is connected to a restoration circuit. The normally closed end of the high-voltage electromagnetic switch is connected to a constant current regulator and a drain test unit. Similarly, when the information processing control unit transmits a drive signal for the drain test unit, the phototransistor receives the signal and turns on, which in turn turns on the PMOS transistor in the drain test unit, thereby transmitting the appropriate drain voltage to DUTa1. One end of the monitoring circuit is connected in parallel to the drain of DUTa1, and the other end is connected in series to the diodes of two opposite-direction photocouplers (Class A and Class B photocouplers). The normally closed end of the high-voltage electromagnetic switch is connected to the restoration circuit and then connected in parallel with the source of DUTa1 together with the monitoring circuit. DUTb1, c1......j1 and DUTa1 have the same circuit structure and connection method, DUTa2, a3......a10 are connected in series to DUTa1, DUTb2, b3......b10 are connected in series to DUTb1, ..., DUTj2, j3......j10 are connected in series to DUTj1, and the circuit structure and connection method of each series-connected unit are the same.

[0034] When the semiconductor device under test enters the OFF state A at a certain point under illumination, the monitoring capacitor is charged to form a charging current. At this time, the charging current of the monitoring capacitor is -i1=dV1 / dC, and the voltage across the diode of the Class A photoelectric coupler after passing through the current amplifier circuit becomes -i1*R1 / R2, which reaches the threshold voltage and causes the diode of the Class A photoelectric coupler to emit light, thereby driving the Class A photoelectric coupler to operate. Meanwhile, the Class B photoelectric coupler does not operate, so the red LED light of the Class A photoelectric coupler is driven to emit light. At the same time, the RS latch 1 operates to maintain the lighting state of the red LED light, thereby recording the OFF state A of the device under test and transmitting it to the information processing control unit.

[0035] When the semiconductor device is exposed to light and enters a short circuit state B, the monitoring capacitor is discharged to form a discharge current. At this time, the discharge current of the monitoring capacitor is i2 = dV2 / dC, and after being amplified by the amplifier, the voltage across the diode of the Class B photoelectric coupler becomes i2 * R1 / R2, which reaches the threshold voltage and causes the diode of the Class B photoelectric coupler to emit light, thereby driving the Class B photoelectric coupler to operate. Meanwhile, the Class A photoelectric coupler does not operate, so the green LED light of the Class B photoelectric coupler is driven to emit light. At the same time, the RS latch 2 operates to keep the green LED light emitting, thereby recording the short circuit state B of the device under test and transmitting it to the information processing control unit.

[0036] As shown in Figure 4, both the drive unit and the information processing control unit are located in the radiation protection unit b. The drive unit, the red and green LEDs of the photoelectric coupler, and the Bluetooth module are all connected and communicated via the IO serial port and FPGA chip. As shown in Figure 5, the output circuit of the characteristic parameter monitoring unit includes red and green LEDs and an RS latch. As shown in Figure 6, the circuit structure of the drive unit, the gate drive circuit, the drain drive circuit, and the drive circuit of the circuit restoration unit are the same. The drive circuit is realized by a photoelectric coupler, and two parts of the photoelectric coupler are located in the radiation protection unit a and the radiation protection unit b, respectively, and both are located at the buckle connection.

[0037] The information processing control unit includes an FPGA control chip, a driving circuit for the circuit restoration unit, a driving circuit for the drain test unit, and a driving circuit for the gate test unit, as well as a Bluetooth HC-05 module, all of which are located within the radiation protection unit b to ensure that they are not affected by the radiation source. The serial port information of the FPGA chip of the information processing control unit is connected to the remote computer of the information transmission unit via the Bluetooth HC-05 module, thereby transmitting the state changes of the device under test under irradiation. The remote computer is remotely controlled from the outside via a network cable, a local area network, etc., and thereby directly transmits the monitored changes in the characteristic parameters of the semiconductor device under test to the remote control personnel.

[0038] The information processing control unit receives the green LED short-circuit state B and the red LED off state A from the characteristic parameter monitoring unit and transmits them to the drive circuit of the circuit restoration unit via the serial port, disconnecting the semiconductor under test in the irradiated state from the system and connecting the circuit restoration unit to the circuit. The microampere-level constant current regulator keeps the system stable without affecting the monitoring of other semiconductor devices under test. At the same time, the R bit potential of the RS latch does not change, allowing the remote tester to monitor the damage status of the semiconductor under test online.

[0039] Based on the above system, the method for monitoring characteristic parameters of a semiconductor device under irradiation scenarios according to the present invention, as shown in FIG. 7, includes: Step S1: selecting an appropriate number of monitoring modules, and arranging a certain number of semiconductor devices to be tested, drain test units, gate test units, characteristic parameter monitoring units, driving units and information processing control units in irradiation protection units a and b, respectively, and placing them together in an irradiation chamber; Step S2 of establishing communication between the tester, the external system, and the information processing control unit via a remote connection; Step S3: the tester sends a control command to the information processing control unit, the information processing control unit turns on the gate test unit and the drain test unit through the driving unit, the tester checks whether the red LED of the characteristic parameter monitoring unit is lit, if it is lit, the monitoring module works normally, then controls the information processing control unit to reset the RS latch, if it is observed that the red LED is off, the irradiation source can be turned on for monitoring; Step S4: inputting a preset drain bias voltage and a gate voltage, turning on the irradiation source, the characteristic parameter monitoring unit starts to operate, and when all the semiconductor devices under test operate normally, the state of the characteristic parameter monitoring unit does not change; Step S5: if a certain semiconductor device under test is faulty under irradiation and is in an off state A or in a short-circuit state B, the corresponding red LED or green LED will light up, and at this time, the information processing control unit will transmit the monitoring parameters to the information transmission unit, and then the tester will check through an external system whether the red LED or green LED displayed at the position of the corresponding semiconductor device under test is lighted up; At the same time as step S5, the information processing control unit controls the driving circuit of the corresponding circuit restoration unit, and the driving circuit of the circuit restoration unit connects the corresponding equivalent circuit to avoid adverse effects on other normal semiconductor devices under test; and step S6. and step S7, when the tester does not enter the irradiation chamber and does not touch the irradiated devices, simultaneously monitoring the operating status of 10,000 semiconductor devices under test under irradiation conditions, obtaining characteristic parameter data of the semiconductor devices under test under irradiation, and thereby determining the irradiation resistance of the semiconductor devices under test.

[0040] Anything not described in detail herein belongs to the prior art known to those skilled in the art. Finally, it should be noted that the above specific embodiments are only for illustrating the technical solution of the present patent and are not limiting, and although the present patent has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present patent can be modified or equivalently substituted without departing from the spirit and scope of the technical solution of the present patent, all of which should be included in the scope of the claims of the present patent.

Claims

1. The test device is used to measure characteristic parameters of a plurality of semiconductor devices under test, and includes a drain test unit, a gate test unit, a characteristic parameter monitoring unit, a driving unit, an information processing control unit, and an information transmission unit, and the characteristic parameter monitoring unit includes a monitoring circuit and an output circuit; the drain test unit, the gate test unit, the monitoring circuit of the characteristic parameter monitoring unit and the semiconductor device under test are disposed in an irradiation protection unit a coated with an outer layer of a metal material, the output circuit of the characteristic parameter monitoring unit, the driving unit and the information processing control unit are disposed in an irradiation protection unit b coated with an outer layer of an irradiation-resistant material, and the irradiation protection unit a and the irradiation protection unit b are both exposed to an irradiation environment and connected by a buckle; the drain test unit is connected to the drain of the semiconductor device under test, the gate test unit is connected to the gate of the semiconductor device under test, and the monitoring circuit of the characteristic parameter monitoring unit has one end connected to the drain of the semiconductor device under test and the other end connected to the source of the semiconductor device under test, and is used to send test signals to the drain and gate of the semiconductor device under test and receive monitoring status information of the semiconductor device under test; The driving unit is used to drive the drain test unit and the gate test unit to start the test; the characteristic parameter monitoring unit has a monitoring circuit that receives and amplifies monitoring status information, and then an output circuit that receives and transmits the same to an information processing control unit; the information processing control unit receives the monitoring status information, forms monitoring parameters corresponding to the status of the semiconductor device under test, and remotely transmits them to an information transmission unit; and the information transmission unit transmits the monitoring parameters of all the semiconductor devices under test to an external system; the characteristic parameter monitoring unit includes two photoelectric couplers, wherein the monitoring circuit of the characteristic parameter monitoring unit includes a monitoring capacitor, a current amplifier and input terminals of the two photoelectric couplers, one end of the monitoring capacitor is connected to the drain of the semiconductor device under test, and the other end passes through a current amplifier and is connected to the input terminals of the two opposite-direction photoelectric couplers, and then is connected to the source of the semiconductor device under test, and the output circuit of the characteristic parameter monitoring unit includes the output terminals of the two photoelectric couplers, two latches, a red LED and a green LED; When the semiconductor device under test is turned off, the monitoring capacitor is charged to form a charging current, which passes through a current amplifier and then enters two photoelectric couplers, driving one of the photoelectric couplers and a red LED to emit light, and at the same time, a latch maintains the red LED in an emitting state; and a latch for maintaining the green LED in an illuminating state.

2. 2. The system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios according to claim 1, wherein the number of gate test units, characteristic parameter monitoring units and semiconductor devices under test in one irradiation protection unit a is the same and m, where m is a multiple of 10, and every 10 semiconductor devices under test are docked to the same drain test unit.

3. 3. The system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios as claimed in claim 2, wherein there are several irradiation protection units a, and in each irradiation protection unit a, the drains of all semiconductor devices under test are connected in series and the gates are connected in series.

4. 2. The system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios as claimed in claim 1, wherein the gate test unit and the drain test unit have the same structure, including a phototransistor and a PMOS tube, wherein the phototransistor is turned on when it receives a signal, and the PMOS tube is turned on to output a gate voltage or a drain voltage to the semiconductor device under test.

5. The radiation protection unit a also includes a circuit restoration unit, the circuit restoration unit including a microampere constant current circuit, a high-voltage electromagnetic switch and an equivalent circuit, the high-voltage electromagnetic switch having a normally closed end connected to the drain of the semiconductor device under test, a normally open end connected to the equivalent circuit, and a common end connected to the microampere constant current circuit and the drain test unit; 2. The system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios as claimed in claim 1, wherein when the information processing control unit detects that the semiconductor device under test is in an off state or a short-circuit state under irradiation conditions, the driving unit drives and operates the circuit restoration unit, thereby disconnecting the drain of the semiconductor device under test from the monitoring circuit and connecting the equivalent circuit to the monitoring circuit.

6. 6. The system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios as claimed in claim 5, wherein the information processing control unit includes an FPGA chip and a Bluetooth module, the FPGA chip controls the driving unit to send driving commands to the drain test unit, the gate test unit and the high-voltage electromagnetic switch based on the monitoring status information of the semiconductor device under test received from the latch, the Bluetooth module remotely transmits the monitoring parameters of the semiconductor device under test to the information transmission unit, and the information transmission unit receives the monitoring parameters via the Bluetooth module, stores them locally, and transmits them to an external system via a network.

7. 2. The system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios as claimed in claim 1, wherein the driving circuit is realized by a photoelectric coupler, and the input terminal and the output terminal of the photoelectric coupler are respectively provided on the irradiation protection unit a and the irradiation protection unit b, both of which are located at the buckle connection portion.

8. A monitoring method implemented on the basis of a system for monitoring characteristic parameters of semiconductor devices under irradiation scenarios according to any one of claims 1 to 7, comprising: Step S1: arranging all semiconductor devices to be tested, drain test units, gate test units, characteristic parameter monitoring units, drive units, and information processing control units in irradiation protection units a and b, respectively, and placing them together in an irradiation chamber; Step S2 of establishing communication between the tester, the external system, and the information processing control unit via a remote connection; Step S3: the tester sends a control command to the information processing control unit, the information processing control unit turns on the gate test unit and the drain test unit through the driving unit, the tester observes whether the red LED of the characteristic parameter monitoring unit is lit, if it is lit, the monitoring circuit operates normally, and then controls the information processing control unit to reset the latch, and if it is observed that the red LED is off, the irradiation source can be turned on and monitored; Step S4: inputting a preset drain bias voltage and a gate voltage, turning on the irradiation source, the characteristic parameter monitoring unit starts to operate, and if all the semiconductor devices under test operate normally, the state of the characteristic parameter monitoring unit does not change; Step S5: if a certain semiconductor device under test fails under irradiation and is in an off state A or a short-circuit state B, the corresponding red LED or green LED lights up, and at this time, the information processing control unit transmits the monitoring parameters to the information transmission unit, and then the tester checks through an external system whether the red LED or green LED displayed at the location of the corresponding semiconductor device under test is lit up; and step S6, when the tester does not enter the irradiation chamber and does not touch the irradiated devices, simultaneously monitoring the operating status of all the semiconductor devices under test under irradiation conditions, thereby determining the irradiation resistance of the semiconductor devices under test.

9. 9. The monitoring method according to claim 8, wherein in step S1, 100 semiconductor devices under test are arranged in the irradiation protection unit a according to a 10*10 matrix, the 100 irradiation protection units a are placed in the irradiation chamber at the same time, and the tester simultaneously detects the characteristic parameters of the 10,000 semiconductor devices under test.

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