Semiconductor device

Abstract

To provide a semiconductor device capable of suppressing the oscillation of a driving signal.SOLUTION: A semiconductor device A5 includes a plurality of first semiconductor elements 1 that are each controlled to be turned on or off in accordance with a first driving signal, a plurality of second semiconductor elements 2 that are each controlled to be turned on or off in accordance with a second driving signal, a conductive plate 31 on which a plurality of first semiconductor elements 1 are mounted on a mount surface 31a, a conductive plate 32 on which a plurality of second semiconductor elements 2 are mounted on a mount surface 32a, a control terminal 61 to which the first driving signal is input, a control terminal 62 to which the second driving signal is input, a wiring part 521 in which the first driving signal is transmitted, a wiring part 531 in which the second driving signal is transmitted, a plurality of connection members 723 connecting between the respective first semiconductor elements 1 and the wiring part 521, and a plurality of connection members 733 connecting between the respective second semiconductor elements 2 and the wiring part 531. The wiring part 521 and the conductive plate 31 exist on opposite sides with the conductive plate 32 held therebetween in a y direction. The connection members 723 overlap with the conductive plate 32 when viewed in a z direction.SELECTED DRAWING: Figure 22

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Conventionally, semiconductor devices including power semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. In such semiconductor devices, a configuration in which multiple power semiconductor elements are connected in parallel to ensure the allowable current of the semiconductor device is known (see, for example, Patent Document 1). The power module described in Patent Document 1 includes multiple first semiconductor elements, multiple first connection wires, a wiring layer, and a signal terminal. The multiple first semiconductor elements are, for example, MOSFETs. Each first semiconductor element is turned on and off in response to a drive signal input to its gate terminal. The multiple first connection wires are, for example, wires, and connect the gate terminals of the multiple first semiconductor elements to the wiring layer. The wiring layer is connected to a signal terminal. The signal terminal is connected to the gate terminal of each first semiconductor element via the wiring layer and each first connection wire. The signal terminal supplies a drive signal for driving each first semiconductor element to the gate terminal of each first semiconductor element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-225493 Summary of the Invention [Problem to be solved by the invention]

[0004] In power semiconductor devices that perform high-speed switching operations, unexpected oscillations may occur in drive signals (e.g., gate voltages), which may cause malfunctions in circuits (e.g., semiconductor devices) that include the power semiconductor devices.

[0005] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor device capable of suppressing oscillation of a drive signal. [Means for solving the problem]

[0006] The semiconductor device disclosed herein includes a plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, and wherein the first electrode and the second electrode are turned on and off in response to a first drive signal input to the third electrode; a first control terminal to which the first drive signal is input; a first wiring section electrically connected to the first control terminal; a second wiring section spaced apart from the first wiring section; a plurality of third wiring sections, each spaced apart from the first wiring section and the second wiring section; a first connecting member that provides electrical continuity between the first wiring section and the second wiring section; a second connecting member that provides electrical continuity between the second wiring section and each of the third wiring sections; and a plurality of third connecting members that provide electrical continuity between each of the third wiring sections and the third electrode of each of the first semiconductor elements. The first electrodes of the first semiconductor elements are electrically connected to each other. The second electrodes of the first semiconductor elements are electrically connected to each other. [Effects of the Invention]

[0007] According to the above configuration, it is possible to suppress oscillation of the drive signal in the semiconductor device. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a perspective view showing a semiconductor device according to a first embodiment. [Figure 2] FIG. 2 is a perspective view of FIG. 1 in which the sealing member is omitted. [Figure 3]FIG. 3 is a partially enlarged view of a part of FIG. 2. [Figure 4] FIG. 3 is a partially enlarged view of a part of FIG. 2. [Figure 5] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment, in which a sealing member is indicated by imaginary lines. [Figure 6] 5, in which the terminals, the connecting members, and the sealing member are omitted. [Figure 7] This is a plan view of FIG. 6 in which some wiring portions are omitted. [Figure 8] 8 is a plan view of FIG. 7 with the insulating substrate omitted. [Figure 9] FIG. 6 is a cross-sectional view taken along line IX-IX in FIG. 5. [Figure 10] FIG. 6 is a cross-sectional view taken along line XX in FIG. 5. [Figure 11] FIG. 6 is a cross-sectional view taken along line XI-XI in FIG. 5. [Figure 12] FIG. 6 is a cross-sectional view taken along line XII-XII in FIG. 5. [Figure 13] FIG. 13 is a partially enlarged view of a part of FIG. [Figure 14] FIG. 13 is a partially enlarged view of a part of FIG. [Figure 15] FIG. 10 is a perspective view showing a semiconductor device according to a second embodiment. [Figure 16] FIG. 10 is a plan view showing a semiconductor device according to a second embodiment, with a part of the case omitted. [Figure 17] 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16, with part of the case shown in imaginary lines. [Figure 18] FIG. 10 is a plan view showing a semiconductor device according to a third embodiment, in which a sealing member is indicated by imaginary lines. [Figure 19] FIG. 10 is a plan view showing a semiconductor device according to a fourth embodiment, in which a sealing member is indicated by imaginary lines. [Figure 20] FIG. 10 is an exploded perspective view showing a part of a semiconductor device according to a fourth embodiment. [Figure 21]FIG. 20 is a cross-sectional view taken along line XXI-XXI in FIG. 19. [Figure 22] FIG. 10 is a plan view showing a semiconductor device according to a fifth embodiment, in which a sealing member is indicated by imaginary lines. DETAILED DESCRIPTION OF THE INVENTION

[0009] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the accompanying drawings. In the following description, identical or similar elements will be designated by the same reference numerals and redundant description will be omitted.

[0010] 1 to 13 show a semiconductor device A1 according to a first embodiment. The semiconductor device A1 includes a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a support member 3, a plurality of insulating substrates 41, a plurality of wiring portions 511-514, 521-523, 531-533, 541-543, 551-553, 561, 571, and 572, a plurality of metal members 58 and 59, a pair of control terminals 61 and 62, a plurality of detection terminals 63-65, a plurality of connecting members 7, and a sealing member 8. As shown in FIGS. 3 and 4, the plurality of connecting members 7 include a plurality of connecting members 711, 712, 721-723, 731-733, 741-743, and 751-753.

[0011] FIG. 1 is a perspective view showing a semiconductor device A1. FIG. 2 is a perspective view of FIG. 1, omitting the sealing member 8. FIG. 3 is an enlarged view of a portion of FIG. 2. FIG. 4 is an enlarged view of a portion of FIG. 2. FIG. 5 is a plan view of the semiconductor device A1, showing the sealing member 8 by imaginary lines (two-dot chain lines). FIG. 6 is a plan view of FIG. 5, omitting the pair of control terminals 61 and 62, the plurality of detection terminals 63 to 65, and the plurality of connection members 7. FIG. 7 is a plan view of FIG. 6, omitting the plurality of wiring portions 512, 513, 521 to 523, 531 to 533, 541 to 543, 551 to 553, 561, 571, and 572. FIG. 8 is a plan view of FIG. 7, omitting the insulating substrate 41. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 5. FIG. 10 is a cross-sectional view taken along line XX in FIG. 5. Fig. 11 is a cross-sectional view taken along line XI-XI in Fig. 5. Fig. 12 is a cross-sectional view taken along line XII-XII in Fig. 5. Fig. 13 is a partially enlarged view of Fig. 12. Fig. 14 is a partially enlarged view of Fig. 12.

[0012] For ease of explanation, the three mutually orthogonal directions are referred to as the x-direction, y-direction, and z-direction. The z-direction is, for example, the thickness direction of the semiconductor device A1. The x-direction is the left-right direction in the plan view of the semiconductor device A1 (see FIG. 5). The y-direction is the up-down direction in the plan view of the semiconductor device A1 (see FIG. 5). The x-direction is an example of a "first direction," and the y-direction is an example of a "second direction."

[0013] The plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 are each, for example, a MOSFET. Instead of a MOSFET, the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 may each be a field effect transistor including a metal-insulator-semiconductor FET (MISFET) or another switching element such as a bipolar transistor including an IGBT. The plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 are each made of a semiconductor material mainly containing silicon carbide (SiC). The semiconductor material is not limited to SiC and may be silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), or gallium oxide (Ga2O3), etc.

[0014] As shown in FIG. 13, each of the multiple first semiconductor elements 1 has an element main surface 1a and an element back surface 1b. The element main surface 1a and the element back surface 1b are spaced apart from each other in the z direction. The element main surface 1a faces the z2 direction, and the element back surface 1b faces the z1 direction. The element main surface 1a is an example of a "first element main surface," and the element back surface 1b is an example of a "first element back surface."

[0015] Each of the multiple first semiconductor elements 1 has a first electrode 11, a second electrode 12, and a third electrode 13. As shown in FIG. 13 , in each first semiconductor element 1, the first electrode 11 is formed on the element back surface 1b, and the second electrode 12 and the third electrode 13 are formed on the element main surface 1a. In an example in which each first semiconductor element 1 is a MOSFET, the first electrode 11 is a drain electrode, the second electrode 12 is a source electrode, and the third electrode 13 is a gate electrode. When a first drive signal (e.g., a gate voltage) is input to the third electrode 13 (gate electrode), each first semiconductor element 1 switches between a conductive state and a cut-off state in response to the first drive signal. This operation of switching between the conductive state and the cut-off state is called a switching operation. In the conductive state, a current flows from the first electrode 11 (drain electrode) to the second electrode 12 (source electrode), and in the cut-off state, this current does not flow. That is, in each first semiconductor element 1, on / off control is performed between the first electrode 11 (drain electrode) and the second electrode 12 (source electrode) by a first drive signal (e.g., gate voltage) input to the third electrode 13 (gate electrode). In the multiple first semiconductor elements 1, the first electrodes 11 are electrically connected to each other and the second electrodes 12 are electrically connected to each other by a configuration that will be described in detail later.

[0016] 2, 3, and 5, the multiple first semiconductor elements 1 are arranged along the x direction. As shown in Fig. 13, each first semiconductor element 1 is bonded to a support member 3 (a conductive plate 31 described below) via a conductive bonding material 19. The conductive bonding material 19 is, for example, solder, a metal paste material, or a sintered metal.

[0017] As shown in FIG. 14, each of the multiple second semiconductor elements 2 has an element main surface 2a and an element back surface 2b. The element main surface 2a and the element back surface 2b are spaced apart from each other in the z direction. The element main surface 2a faces the z2 direction, and the element back surface 2b faces the z1 direction. The element main surface 2a is an example of a "second element main surface," and the element back surface 2b is an example of a "second element back surface."

[0018] Each of the multiple second semiconductor elements 2 has a fourth electrode 21, a fifth electrode 22, and a sixth electrode 23. As shown in FIG. 14 , in each second semiconductor element 2, the fourth electrode 21 is formed on the element back surface 2b, and the fifth electrode 22 and the sixth electrode 23 are formed on the element main surface 2a. In an example in which each second semiconductor element 2 is a MOSFET, the fourth electrode 21 is a drain electrode, the fifth electrode 22 is a source electrode, and the sixth electrode 23 is a gate electrode. When a second drive signal (e.g., a gate voltage) is input to the sixth electrode 23 (gate electrode), each second semiconductor element 2 performs a switching operation in response to the second drive signal (switching between a conductive state and a cut-off state). In the conductive state, a current flows from the fourth electrode 21 (drain electrode) to the fifth electrode 22 (source electrode), and in the cut-off state, no current flows. That is, in each second semiconductor element 2, the on / off control is performed between the fourth electrode 21 (drain electrode) and the fifth electrode 22 (source electrode) in accordance with a second drive signal (for example, a gate voltage) input to the sixth electrode 23 (gate electrode). In the multiple second semiconductor elements 2, the fourth electrodes 21 are electrically connected to each other and the fifth electrodes 22 are electrically connected to each other by a configuration that will be described in detail later.

[0019] 2, 4, and 5, the multiple second semiconductor elements 2 are arranged along the x direction. The multiple second semiconductor elements 2 are positioned further in the y2 direction than the multiple first semiconductor elements 1. As shown in FIG. 14, each second semiconductor element 2 is bonded to a support member 3 (a conductive plate 32 described below) via a conductive bonding material 29. The conductive bonding material 29 is, for example, solder, a metal paste material, or a sintered metal.

[0020] The semiconductor device A1 is configured, for example, as a half-bridge switching circuit. A plurality of first semiconductor elements 1 configure an upper arm circuit of the semiconductor device A1, and a plurality of second semiconductor elements 2 configure a lower arm circuit of the semiconductor device A1. In the semiconductor device A1, the plurality of first semiconductor elements 1 are electrically connected in parallel with each other, and the plurality of second semiconductor elements 2 are electrically connected in parallel with each other. Each first semiconductor element 1 and each second semiconductor element 2 are connected in series by electrically connecting the second electrode 12 and the fourth electrode 21 of each first semiconductor element 1 and each second semiconductor element 2. This series connection of each first semiconductor element 1 and each second semiconductor element 2 configures a bridge. In the illustrated example, the semiconductor device A1 includes four first semiconductor elements 1 and four second semiconductor elements 2 (see FIGS. 2 and 5). The number of first semiconductor elements 1 and second semiconductor elements 2 is not limited to this configuration and can be changed as appropriate depending on the performance required of the semiconductor device A1.

[0021] 8 to 14, the support member 3 supports a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2. As shown in FIGS. 8 to 14, the support member 3 has a pair of conductive plates 31, 32 and a pair of insulating plates 33, 34.

[0022] Each of the conductive plates 31, 32 is made of a conductive material, such as copper or a copper alloy. Each of the conductive plates 31, 32 may be a laminate in which copper layers and molybdenum layers are alternately stacked in the z direction. In this case, both the z1-direction and z2-direction surface layers of each of the conductive plates 31, 32 are copper layers. As shown in FIG. 8, each of the conductive plates 31, 32 is rectangular when viewed in the z direction ("plan view").

[0023] As shown in FIGS. 8, 12, and 13, the conductive plate 31 has a plurality of first semiconductor elements 1 mounted thereon and supports the plurality of first semiconductor elements 1. The conductive plate 31 is electrically connected to the first electrodes 11 (drain electrodes) of each of the first semiconductor elements 1. The first electrodes 11 of the plurality of first semiconductor elements 1 are electrically connected to one another via the conductive plate 31. The conductive plate 31 is, for example, rectangular parallelepiped-shaped. The dimension of the conductive plate 31 along the z direction is greater than the dimension of the insulating substrate 41 along the z direction. The conductive plate 31 is an example of a "first mounting portion."

[0024] As shown in FIGS. 9 and 11 to 13, the conductive plate 31 has a mounting surface 31a. The mounting surface 31a faces the z2 direction. The first semiconductor elements 1 are bonded to the mounting surface 31a, and the wiring portion 511 is also bonded to the mounting surface 31a. As shown in FIGS. 9 and 13, the conductive plate 31 is bonded to the insulating plate 33 via a bonding material 319. The bonding material 319 may be conductive or insulating.

[0025] As shown in FIGS. 8, 12, and 14, the conductive plate 32 has a plurality of second semiconductor elements 2 mounted thereon and supports the plurality of second semiconductor elements 2. The conductive plate 32 is electrically connected to the fourth electrode 21 (drain electrode) of each second semiconductor element 2. The fourth electrodes 21 of the plurality of second semiconductor elements 2 are electrically connected to each other via the conductive plate 32. The conductive plate 32 has, for example, a rectangular parallelepiped shape. The dimension of the conductive plate 32 along the z direction is greater than the dimension of the insulating substrate 41 along the z direction. The conductive plate 32 is an example of a "second mounting portion."

[0026] As shown in FIGS. 10, 12, and 14, the conductive plate 32 has a mounting surface 32a. The mounting surface 32a faces the z2 direction. The second semiconductor elements 2 are bonded to the mounting surface 32a, and the wiring portion 514 is also bonded to the mounting surface 32a. As shown in FIGS. 10 and 14, the conductive plate 32 is bonded to the insulating plate 34 via a bonding material 329. The bonding material 329 may be conductive or insulating.

[0027] The pair of insulating plates 33, 34 are each made of an insulating material, such as Al2O3. As shown in Fig. 8, each of the insulating plates 33, 34 has, for example, a rectangular shape in plan view. As shown in Figs. 8, 9, and 11 to 13, the insulating plate 33 supports the conductive plate 31. As shown in Figs. 8, 10 to 12, and 14, the insulating plate 34 supports the conductive plate 32. A plating layer may be formed on the surface of each of the insulating plates 33, 34 to which the conductive plates 31, 32 are joined. The plating layer may be made of, for example, silver or a silver alloy.

[0028] Insulating substrate 41 is made of an insulating material, for example, glass epoxy resin. Insulating substrate 41 may be made of ceramics such as AlN (aluminum nitride), SiN (silicon nitride), or Al2O3 (aluminum oxide) instead of glass epoxy resin. Insulating substrate 41 is an example of an "insulating substrate."

[0029] 9 to 14, insulating substrate 41 has a main surface 411 and a back surface 412. Main surface 411 and back surface 412 are spaced apart in the z direction. Main surface 411 faces the z2 direction, and back surface 412 faces the z1 direction. Main surface 411 is an example of a "substrate main surface," and back surface 412 is an example of a "substrate back surface."

[0030] As shown in FIGS. 7 and 11 to 14, insulating substrate 41 includes a plurality of through holes 413, a through hole 414, a plurality of openings 415 and a plurality of openings 416. As shown in FIGS.

[0031] As shown in FIG. 11 , each of the multiple through holes 413 penetrates the insulating substrate 41 in the z direction from the main surface 411 to the back surface 412. As shown in FIGS. 7 and 11 , a metal member 59 is inserted into each through hole 413. As shown in FIGS. 7 and 11 , the inner surface of each through hole 413 is not in contact with the metal member 59. Alternatively, the inner surface of each through hole 413 may be in contact with the metal member 59. In the present disclosure, "inserted" refers to a state in which a certain member (e.g., each metal member 59) is inserted into a certain through hole (e.g., each through hole 413), and it is not limited to whether the certain member is in contact with the inner surface of the certain through hole. Note that an insulating member different from the insulating substrate 41 may be formed in the gap between each metal member 59 and each through hole 413.

[0032] The through hole 414 penetrates the insulating substrate 41 in the z direction from the main surface 411 to the back surface 412. As shown in Fig. 7, a metal member 58 is inserted into the through hole 414. In the illustrated example, the inner surface of the through hole 414 is in contact with the metal member 58 (see Fig. 7), but it does not have to be in contact.

[0033] 7, 12, and 13, each of the multiple openings 415 penetrates the insulating substrate 41 in the z direction from the main surface 411 to the back surface 412. As shown in Fig. 7, each opening 415 surrounds one of the first semiconductor elements 1 in plan view. Each opening 415 is an example of a "first opening."

[0034] 7, 12, and 14, each of the multiple openings 416 penetrates the insulating substrate 41 in the z direction from the main surface 411 to the back surface 412. As shown in FIG. 7, each opening 416 surrounds a corresponding second semiconductor element 2 in plan view. Each opening 416 is an example of a "second opening."

[0035] The plurality of wiring portions 511-514, 521-523, 531-533, 541-543, 551-553, and 561 form conductive paths in the semiconductor device A1 together with a part of the support member 3 (conductive plates 31 and 32), the plurality of metal members 58 and 59, and the plurality of connecting members 711, 712, 721-723, 731-733, 741-743, and 751-753. The plurality of wiring portions 511-514, 521-523, 531-533, 541-543, 551-553, 561, 571, and 572 are spaced apart from one another. The wiring portions 511-514, 521-523, 531-533, 541-543, 551-553, 561, 571, and 572 are made of, for example, copper or a copper alloy. The thickness (dimension in the z direction) and constituent material of each wiring portion 511-514, 521-523, 531-533, 541-543, 551-553, 561, 571, and 572 are changed as appropriate depending on the specifications of the semiconductor device A1 (such as rated current, allowable current, rated voltage, withstand voltage, internal inductance of the entire device, and size of the device).

[0036] The plurality of wiring portions 511 to 514 form a conduction path for a main current in the semiconductor device A1. In the semiconductor device A1, the wiring portion 511 and the wiring portion 512 overlap each other in a plan view, and the wiring portion 513 and the wiring portion 514 overlap each other in a plan view.

[0037] The wiring portion 511 is formed on the rear surface 412 of the insulating substrate 41. As shown in Fig. 9 and Figs. 11 to 13, the wiring portion 511 is joined to the mounting surface 31a of the conductive plate 31. The wiring portion 511 is electrically connected to each of the first electrodes 11 (drain electrodes) of the plurality of first semiconductor elements 1 via the conductive plate 31.

[0038] As shown in FIGS. 8, 12, and 13, the wiring portion 511 includes a plurality of openings 511a and through holes 511b. As shown in FIGS. 12 and 13, each of the plurality of openings 511a penetrates in the z direction. As can be seen from FIGS. 12 and 13, each of the plurality of openings 511a overlaps with a corresponding opening 415 of the insulating substrate 41 in a plan view. As shown in FIG. 8, each opening 511a surrounds a corresponding first semiconductor element 1 in a plan view. The through holes 511b penetrate the wiring portion 511 in the z direction. As shown in FIG. 8, a metal member 58 is fitted into each through hole 511b.

[0039] The wiring portion 512 is formed on the main surface 411 of the insulating substrate 41. As can be seen from Figures 5 and 6, the wiring portion 512 is electrically connected to the fifth electrodes 22 (source electrodes) of the second semiconductor elements 2 via a plurality of connection members 712. The wiring portion 512 is formed so as to avoid the plurality of first semiconductor elements 1 in a plan view.

[0040] The wiring portion 513 is formed on the main surface 411 of the insulating substrate 41. In a plan view, the wiring portion 513 is located further in the y1 direction than the wiring portion 512. As can be seen from FIGS. 5 and 6, the wiring portion 513 is electrically connected to the second electrodes 12 (source electrodes) of the respective first semiconductor elements 1 via a plurality of connection members 711. Furthermore, the wiring portion 513 is electrically connected to the fourth electrodes 21 (drain electrodes) of the respective second semiconductor elements 2 via the wiring portion 514 and the respective metal members 59, with a configuration that will be described in detail later. The wiring portion 513 is formed so as to avoid each of the plurality of second semiconductor elements 2 in a plan view.

[0041] As shown in FIGS. 6 and 11, the wiring portion 513 includes a plurality of through holes 513a. As shown in FIGS. 6 and 11, a plurality of metal members 59 are fitted into each of the through holes 513a. As shown in FIGS. 6 and 11, the inner surface of each through hole 513a is in contact with the corresponding metal member 59. In the present disclosure, "fitted" refers to a state in which a certain member (e.g., each metal member 59) is inserted into a certain through hole (e.g., each through hole 513a), and the certain member is in contact with the inner surface of the certain through hole. In other words, the "fitted" state corresponds to the "inserted" state in which the certain member is in contact with the inner surface of the through hole. In the illustrated example, each through hole 513a is circular in plan view (see FIG. 6), but this can be changed as appropriate depending on the shape of each metal member 59.

[0042] The wiring portion 514 is formed on the rear surface 412 of the insulating substrate 41. As shown in FIGS. 8, 10 to 12, and 14, the wiring portion 514 is joined to the mounting surface 32a of the conductive plate 32. The wiring portion 514 is electrically connected to each of the fourth electrodes 21 (drain electrodes) of the plurality of second semiconductor elements 2 via the conductive plate 32. Furthermore, the wiring portion 514 is electrically connected to the second electrodes 12 (source electrodes) of each of the first semiconductor elements 1 via the wiring portion 513 and each metal member 59, using a configuration that will be described in detail later.

[0043] As shown in FIGS. 8, 11, 12, and 14, the wiring portion 514 includes a plurality of openings 514a and a plurality of through holes 514b. As shown in FIG. 12, each of the plurality of openings 514a penetrates in the z direction. As can be seen from FIGS. 12 and 14, each of the plurality of openings 514a overlaps with a corresponding opening 416 of the insulating substrate 41 in a planar view. As shown in FIG. 8, each of the openings 514a surrounds a corresponding second semiconductor element 2 in a planar view. As shown in FIG. 11, each of the plurality of through holes 514b penetrates the wiring portion 514 in the z direction. Each of the through holes 514b overlaps with a corresponding through hole 513a of the wiring portion 513 in a planar view. A plurality of metal members 59 are fitted into each of the through holes 514b.

[0044] In the semiconductor device A1, the wiring portion 511 includes a first power terminal portion 501, as shown in FIG. 8 . The first power terminal portion 501 is located at the end of the wiring portion 511 on the x2 direction side. The first power terminal portion 501 is part of the wiring portion 511 and is therefore electrically connected to each of the first electrodes 11 (drain electrodes) of the multiple first semiconductor elements 1. The wiring portion 512 includes a second power terminal portion 502, as shown in FIGS. 2 , 5 , and 6 . The second power terminal portion 502 is located at the end of the wiring portion 512 on the x2 direction side. The second power terminal portion 502 is part of the wiring portion 512 and is therefore electrically connected to the fifth electrodes 22 (source electrodes) of each of the second semiconductor elements 2. The wiring portion 513 includes a third power terminal portion 503, as shown in FIGS. 2 , 5 , and 6 . The third power terminal portion 503 is located at the end of the wiring portion 513 on the x2 direction side. The third power terminal portion 503 is part of the wiring portion 513, and is therefore electrically connected to the second electrode 12 (source electrode) of each first semiconductor element 1 and the fourth electrode 21 (drain electrode) of each second semiconductor element 2. As shown in FIG. 8 , the wiring portion 514 includes a fourth power terminal portion 504. The fourth power terminal portion 504 is located at the end of the wiring portion 514 on the x2 direction side. The fourth power terminal portion 504 is part of the wiring portion 514, and is therefore electrically connected to the second electrode 12 (source electrode) of each first semiconductor element 1 and the fourth electrode 21 (drain electrode) of each second semiconductor element 2.

[0045] The first power terminal portion 501, the second power terminal portion 502, the third power terminal portion 503, and the fourth power terminal portion 504 are spaced apart from one another and are each exposed from the sealing member 8. The surfaces of the first power terminal portion 501, the second power terminal portion 502, the third power terminal portion 503, and the fourth power terminal portion 504 may or may not be plated.

[0046] The first power terminal portion 501 and the second power terminal portion 502 overlap each other in a planar view. The third power terminal portion 503 and the fourth power terminal portion 504 overlap each other in a planar view. In the illustrated example, the semiconductor device A1 includes the third power terminal portion 503 and the fourth power terminal portion 504, but it may also include only one of the third power terminal portion 503 and the fourth power terminal portion 504, instead of this configuration.

[0047] The first power terminal unit 501 and the second power terminal unit 502 are connected to, for example, an external DC power supply, and a power supply voltage (DC voltage) is applied to them. In the semiconductor device A1, the first power terminal unit 501 is a P terminal connected to the positive pole of the DC power supply, and the second power terminal unit 502 is an N terminal connected to the negative pole of the DC power supply. The DC voltage applied to the first power terminal unit 501 and the second power terminal unit 502 is converted to an AC voltage by the switching operations of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2. The converted voltage (AC voltage) is output from the third power terminal unit 503 and the fourth power terminal unit 504, respectively. The main current in the semiconductor device A1 is generated by the power supply voltage and the converted voltage.

[0048] The plurality of wiring portions 521 to 523, 531 to 533, 541 to 543, 551 to 553, and 561 form conduction paths for control signals in the semiconductor device A1.

[0049] The wiring portion 521 is formed on the main surface 411 of the insulating substrate 41. As shown in FIG. 5, the control terminal 61 is conductively joined to the wiring portion 521. The wiring portion 521 is an example of a "first wiring portion." As shown in FIGS. 5 and 6, the wiring portion 521 includes two pad portions 521a and 521b and a coupling portion 521c. The pad portion 521a is a portion of the wiring portion 521 to which the control terminal 61 is joined. The pad portion 521b is a portion of the wiring portion 521 to which one end of the connection member 721 is connected. The pad portion 521b is located on one side in the x-direction (the x2 direction in the example shown in FIGS. 5 and 6) with respect to the pad portion 521a. The coupling portion 521c connects the two pad portions 521a and 521b.

[0050] The wiring portion 522 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, the wiring portion 522 is strip-shaped with its longitudinal direction in the x direction in a plan view. A connection member 721 and a plurality of connection members 722 are respectively joined to the wiring portion 522. The wiring portion 522 is electrically connected to the wiring portion 521 via the connection member 721. The wiring portion 522 is an example of a "second wiring portion."

[0051] Each of the multiple wiring portions 523 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, each wiring portion 523 is strip-shaped with its longitudinal direction in the x direction in plan view. Each wiring portion 523 is joined to a connecting member 722 and a connecting member 723, respectively. Each wiring portion 523 is electrically connected to a third electrode 13 (gate electrode) of each first semiconductor element 1 via each connecting member 723. The wiring portion 523 is an example of a "third wiring portion."

[0052] As shown in FIGS. 3, 5, and 6, the wiring portion 522 and the plurality of wiring portions 523 are arranged along the x direction. The wiring portion 522 and the plurality of wiring portions 523 are each located on the other side of the x direction (x2 direction) relative to the pad portion 521b, and overlap the pad portion 521b when viewed in the x direction. For example, some of the plurality of wiring portions 523 are located on one side of the x direction (x1 direction) relative to the wiring portion 522, and others are located on the other side of the x direction (x2 direction) (see FIGS. 5 and 6). In the illustrated example, of the four wiring portions 523, two wiring portions 523 are located on the x1 direction relative to the wiring portion 522, and the other two wiring portions 523 are located on the x2 direction relative to the wiring portion 522. That is, in the semiconductor device A1, the same number of wiring portions 523 are arranged on either side of the wiring portion 522. The position of the wiring portion 523 in the x direction relative to the wiring portion 522 can be changed as appropriate, and for example, the number of wiring portions 523 located in the x1 direction may be different from the number of wiring portions 523 located in the x2 direction across the wiring portion 522. Furthermore, the wiring portion 522 and the plurality of wiring portions 523 are located on the opposite side of the plurality of first semiconductor elements 1 in the y direction from the side on which the plurality of second semiconductor elements 2 are arranged (i.e., the y2 direction).

[0053] The wiring portion 531 is formed on the main surface 411 of the insulating substrate 41. As shown in FIG. 5, the control terminal 62 is conductively joined to the wiring portion 531. The wiring portion 531 is an example of a "seventh wiring portion." As shown in FIGS. 5 and 6, the wiring portion 531 includes two pad portions 531a and 531b and a coupling portion 531c. The pad portion 531a is a portion of the wiring portion 531 to which the control terminal 62 is joined. The pad portion 531b is a portion of the wiring portion 531 to which one end of the connection member 731 is joined. The pad portion 531b is located on the other side in the x-direction (the x2 direction in the example shown in FIGS. 5 and 6) of the pad portion 531a. The coupling portion 531c connects the two pad portions 531a and 531b.

[0054] The wiring portion 532 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, the wiring portion 532 has a strip shape with its longitudinal direction in the x direction in a plan view. The wiring portion 532 has a connection member 731 and a plurality of connection members 732 joined thereto. The wiring portion 532 is electrically connected to the wiring portion 531 via the connection member 731. The wiring portion 532 is an example of an "eighth wiring portion."

[0055] Each of the multiple wiring portions 533 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, each wiring portion 533 is strip-shaped with its longitudinal direction in the x direction in plan view. A connecting member 732 and a connecting member 733 are respectively joined to each wiring portion 533. Each wiring portion 533 is electrically connected to the sixth electrode 23 (gate electrode) of each second semiconductor element 2 via each connecting member 733. The wiring portion 533 is an example of a "ninth wiring portion."

[0056] As shown in FIGS. 4 to 6, the wiring portion 532 and the plurality of wiring portions 533 are arranged along the x direction. Furthermore, the wiring portion 532 and the plurality of wiring portions 533 are each located on the other side of the x direction (x2 direction) relative to the pad portion 531b, and overlap the pad portion 521b when viewed in the x direction. For example, some of the plurality of wiring portions 533 are located on one side of the x direction (x1 direction) relative to the wiring portion 532, and others are located on the other side of the x direction (x2 direction) (see FIGS. 5 and 6). In the illustrated example, of the four wiring portions 533, two wiring portions 533 are located on the x1 direction relative to the wiring portion 532, and the other two wiring portions 533 are located on the x2 direction relative to the wiring portion 532. That is, in the semiconductor device A1, the same number of wiring portions 533 are arranged with the wiring portion 532 sandwiched therebetween. The position of wiring portion 533 in the x direction relative to wiring portion 532 can be changed as appropriate, and for example, the number of wiring portions 533 located in the x1 direction and the number of wiring portions 533 located in the x2 direction across wiring portion 532 may be different. Furthermore, wiring portion 532 and the multiple wiring portions 533 are located on the opposite side of the multiple second semiconductor elements 2 from the side on which the multiple first semiconductor elements 1 are arranged in the y direction (i.e., the y1 direction).

[0057] The wiring portion 541 is formed on the main surface 411 of the insulating substrate 41. As shown in FIG. 5, the detection terminal 63 is conductively joined to the wiring portion 541. The wiring portion 541 is an example of a "fourth wiring portion." As shown in FIGS. 5 and 6, the wiring portion 541 includes two pad portions 541a and 541b and a coupling portion 541c. The pad portion 541a is a portion of the wiring portion 541 to which the detection terminal 63 is joined. The pad portion 541b is a portion of the wiring portion 541 to which one end of the connection member 741 is joined. The pad portion 541b is located on the other side in the x-direction (the x2 direction in the example shown in FIGS. 5 and 6) of the pad portion 541a. The coupling portion 541c connects the two pad portions 541a and 541b.

[0058] The wiring portion 542 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, the wiring portion 542 is strip-shaped with its longitudinal direction in the x direction in a plan view. The wiring portion 542 has a connection member 741 and a plurality of connection members 742 joined thereto. The wiring portion 542 is electrically connected to the wiring portion 541 via the connection member 741. As shown in FIGS. 5 and 6, the wiring portion 522 and the wiring portion 542 are aligned in the y direction, with their longitudinal directions arranged parallel to each other. The wiring portion 542 is an example of a "fifth wiring portion."

[0059] Each of the multiple wiring portions 543 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, each wiring portion 543 is strip-shaped with its longitudinal direction in the x direction in plan view. Each wiring portion 543 is joined to a connecting member 742 and a connecting member 743, respectively. Each wiring portion 543 is electrically connected to the second electrode 12 (source electrode) of each first semiconductor element 1 via each connecting member 743. Each wiring portion 543 is an example of a "sixth wiring portion."

[0060] As shown in FIGS. 3, 5, and 6, the wiring portion 542 and the plurality of wiring portions 543 are arranged along the x direction. The wiring portion 542 and the plurality of wiring portions 543 are each located on the other side of the x direction (x2 direction) relative to the pad portion 541b, and overlap the pad portion 541b when viewed in the x direction. For example, some of the plurality of wiring portions 543 are located on one side of the x direction (x1 direction) relative to the wiring portion 542, and others are located on the other side of the x direction (x2 direction) (see FIGS. 5 and 6). In the illustrated example, of the four wiring portions 543, two wiring portions 543 are located on the x1 direction relative to the wiring portion 542, and the other two wiring portions 543 are located on the x2 direction relative to the wiring portion 542. That is, in the semiconductor device A1, the same number of wiring portions 543 are arranged on either side of the wiring portion 542. The position of the wiring portion 543 in the x direction relative to the wiring portion 542 can be changed as appropriate. For example, the number of wiring portions 543 located in the x1 direction and the number of wiring portions 543 located in the x2 direction across the wiring portion 542 may be different. Furthermore, the wiring portion 542 and the plurality of wiring portions 543 are located in the y direction opposite the side on which the plurality of second semiconductor elements 2 are arranged relative to the plurality of first semiconductor elements 1 (i.e., the y2 direction). As shown in FIGS. 5 and 6, in the semiconductor device A1, the wiring portion 542 and the plurality of wiring portions 543 are arranged in the y2 direction relative to the wiring portion 522 and the plurality of wiring portions 523, but they may also be arranged in the opposite direction, in the y1 direction.

[0061] The wiring portion 551 is formed on the main surface 411 of the insulating substrate 41. As shown in FIG. 5, the detection terminal 64 is conductively joined to the wiring portion 551. The wiring portion 551 is an example of a "tenth wiring portion." As shown in FIGS. 5 and 6, the wiring portion 551 includes two pad portions 551a and 551b and a connecting portion 551c. The pad portion 551a is a portion of the wiring portion 551 to which the detection terminal 64 is joined. The pad portion 551b is a portion of the wiring portion 551 to which one end of the connection member 751 is joined. The pad portion 551b is located on one side in the x-direction (the x2 direction in the example shown in FIGS. 5 and 6) with respect to the pad portion 551a. The connecting portion 551c connects the two pad portions 551a and 551b.

[0062] The wiring portion 552 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, the wiring portion 552 is strip-shaped with its longitudinal direction in the x direction in a plan view. The wiring portion 552 has a connection member 751 and a plurality of connection members 752 joined thereto. The wiring portion 552 is electrically connected to the wiring portion 551 via the connection member 751. As shown in FIGS. 5 and 6, the wiring portion 532 and the wiring portion 552 are aligned in the y direction, with their longitudinal directions arranged parallel to each other. The wiring portion 552 is an example of an "eleventh wiring portion."

[0063] Each of the multiple wiring portions 553 is formed on the main surface 411 of the insulating substrate 41. As shown in FIGS. 5 and 6, each wiring portion 553 is strip-shaped with its longitudinal direction in the x direction in plan view. Each wiring portion 553 is joined to a connecting member 752 and a connecting member 753, respectively. Each wiring portion 553 is electrically connected to the fifth electrode 22 (source electrode) of each second semiconductor element 2 via each connecting member 753. Each wiring portion 553 is an example of a "twelfth wiring portion."

[0064] As shown in FIGS. 3, 5, and 6, the wiring portion 552 and the plurality of wiring portions 553 are arranged along the x direction. The wiring portion 552 and the plurality of wiring portions 553 are each located on the other side of the x direction (x2 direction) relative to the pad portion 551b, and overlap the pad portion 551b when viewed in the x direction. For example, some of the plurality of wiring portions 553 are located on one side of the x direction (x1 direction) relative to the wiring portion 552, and others are located on the other side of the x direction (x2 direction) (see FIGS. 5 and 6). In the illustrated example, of the four wiring portions 553, two wiring portions 553 are located on the x1 direction relative to the wiring portion 552, and the other two wiring portions 553 are located on the x2 direction relative to the wiring portion 552. That is, in the semiconductor device A1, the same number of wiring portions 553 are arranged on either side of the wiring portion 552. The position of the wiring portion 553 in the x direction relative to the wiring portion 552 can be changed as appropriate. For example, the number of wiring portions 553 located in the x1 direction and the number of wiring portions 553 located in the x2 direction across the wiring portion 552 may be different. Furthermore, the wiring portion 552 and the plurality of wiring portions 553 are located in the y direction opposite the side on which the plurality of first semiconductor elements 1 are arranged relative to the plurality of second semiconductor elements 2 (i.e., the y1 direction). As shown in FIGS. 5 and 6, in the semiconductor device A1, the wiring portion 552 and the plurality of wiring portions 553 are located in the y1 direction relative to the wiring portion 532 and the plurality of wiring portions 533, but they may also be located in the opposite direction, in the y2 direction.

[0065] The wiring portion 561 is formed on the main surface 411 of the insulating substrate 41. As shown in FIG. 5, the detection terminal 65 is conductively joined to the wiring portion 561. As shown in FIG. 6, a through hole 561a is formed in the wiring portion 561. The through hole 561a passes through the wiring portion 561 in the z direction. A metal member 58 is fitted into the through hole 561a.

[0066] The plurality of wiring portions 571, 572 are each formed on the main surface 411 of the insulating substrate 41. Each of the plurality of wiring portions 571 is formed in a region of the main surface 411 sandwiched between two first semiconductor elements 1 adjacent to each other in the x-direction in a plan view. Each of the plurality of wiring portions 572 is formed in a region of the main surface 411 sandwiched between two second semiconductor elements 2 adjacent to each other in the x-direction in a plan view. In the illustrated example, each of the wiring portions 571, 572 has a rectangular shape in a plan view (see FIGS. 5 and 6 ), but this is not limiting. Each of the wiring portions 571 may be formed integrally with the wiring portion 512, or each of the wiring portions 572 may be formed integrally with the wiring portion 513. Furthermore, each of the wiring portions 571, 572 may not be formed. In the semiconductor device A1, each of the plurality of wiring portions 571, 572 is not electrically connected to either the plurality of first semiconductor elements 1 or the plurality of second semiconductor elements 2.

[0067] As shown in FIG. 11 , each of the plurality of metal members 59 penetrates the insulating substrate 41 in the z direction, and electrically connects the wiring portion 513 and the wiring portion 514. Each metal member 59 is, for example, columnar. In the illustrated example, the shape of each metal member 59 in a plan view is circular (see FIGS. 5 to 8 ), but the shape of each metal member 59 in a plan view may not be circular but may instead be elliptical or polygonal. Each metal member 59 is made of, for example, copper or a copper alloy.

[0068] As shown in FIGS. 6 to 8 and 11 , the plurality of metal members 59 are fitted into the through holes 513a of the wiring portion 513 and the through holes 514b of the wiring portion 514, and are inserted into the through holes 413 of the insulating substrate 41. Each metal member 59 contacts the inner surface of the through hole 513a and the inner surface of the through hole 514b. Each metal member 59 is supported by being fitted into the through hole 513a and the through hole 514b. If gaps are formed between each metal member 59 and the inner surface of the through hole 513a and between each metal member 59 and the inner surface of the through hole 514b, solder may be poured into these gaps. This fills the gaps, and the metal members 59 are fixed to the wiring portion 513 and the wiring portion 514. When the solder is poured, the gaps between the metal members 59 and the inner surfaces of the through holes 413 of the insulating substrate 41 can also be filled with the solder.

[0069] Metal member 58 penetrates insulating substrate 41 in the z direction, and electrically connects wiring portion 511 and wiring portion 561. Metal member 58 is, for example, columnar. In the illustrated example, metal member 58 has a circular shape in a planar view (see FIGS. 6 to 8), but the shape of metal member 58 in a planar view may not be circular, but may instead be elliptical or polygonal. Metal member 58 is made of, for example, copper or a copper alloy.

[0070] As shown in FIGS. 6 to 8 , the metal member 58 is fitted into the through hole 561a of the wiring portion 561 and the through hole 511b of the wiring portion 511, and is also inserted into the through hole 414 of the insulating substrate 41. The metal member 58 is in contact with the inner surfaces of the through holes 561a, 511b, and 414. The metal member 58 is supported by being fitted into the through holes 561a, 511b, and 414. At this time, if gaps are formed between the metal member 58 and the inner surfaces of the through holes 561a, 511b, and 414, solder may be poured into these gaps. This fills the gaps with solder, and the metal member 58 is fixed to the wiring portions 511 and 561 and the insulating substrate 41.

[0071] In the semiconductor device A1, as shown in FIGS. 12 and 13, each first semiconductor element 1 is accommodated in a recess formed by the openings 415 of the insulating substrate 41 and the openings 511a of the wiring portion 511, and the conductive plate 31. In the illustrated example, the element main surface 1a of each first semiconductor element 1 overlaps either the insulating substrate 41 or the wiring portion 511 when viewed in a direction perpendicular to the z direction (e.g., the y direction), but may also overlap the wiring portion 512. In either case, each first semiconductor element 1 does not protrude upward in the z direction (z2 direction) beyond the wiring portion 512. Similarly, as shown in FIGS. 12 and 14, each second semiconductor element 2 is accommodated in a recess formed by the openings 416 of the insulating substrate 41 and the openings 514a of the wiring portion 514, and the conductive plate 32. In the illustrated example, the element main surface 2a of each second semiconductor element 2 overlaps either the insulating substrate 41 or the wiring portion 514 when viewed in a direction perpendicular to the z direction (for example, the y direction), but may also overlap the wiring portion 513. In either case, each second semiconductor element 2 does not protrude upward in the z direction (z2 direction) beyond the wiring portion 513.

[0072] The control terminals 61, 62 and the detection terminals 63 to 65 are each made of a conductive material, such as copper or a copper alloy. The control terminals 61, 62 and the detection terminals 63 to 65 are each formed by cutting out and bending a plate-shaped member.

[0073] The control terminal 61 is electrically connected to the third electrode 13 (gate electrode) of each first semiconductor element 1. A first drive signal that controls the switching operation of each first semiconductor element 1 is input to the control terminal 61. The control terminal 61 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. The portion of the control terminal 61 that is covered by the sealing member 8 is joined to the pad portion 521a of the wiring portion 521. The portion of the control terminal 61 that is exposed from the sealing member 8 is connected to an external control device (for example, a gate driver), and a first drive signal (gate voltage) is input from the control device. The control terminal 61 is an example of a "first control terminal."

[0074] The control terminal 62 is electrically connected to the sixth electrode 23 (gate electrode) of each second semiconductor element 2. A second drive signal that controls the switching operation of each second semiconductor element 2 is input to the control terminal 62. The control terminal 62 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. The portion of the control terminal 62 that is covered by the sealing member 8 is joined to the pad portion 531a of the wiring portion 531. The portion of the control terminal 62 that is exposed from the sealing member 8 is connected to the external control device, and a second drive signal (gate voltage) is input from the control device. The control terminal 62 is an example of a "second control terminal."

[0075] The detection terminal 63 is electrically connected to the second electrode 12 (source electrode) of each first semiconductor element 1. The detection terminal 63 outputs a first detection signal indicating the conduction state of each first semiconductor element 1. In the semiconductor device A1, a voltage (a voltage corresponding to the source current) applied to the second electrode 12 of each first semiconductor element 1 is output from the detection terminal 63 as the first detection signal. The detection terminal 63 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. The portion of the detection terminal 63 covered by the sealing member 8 is joined to the pad portion 541a of the wiring portion 541. The portion of the detection terminal 63 exposed from the sealing member 8 is connected to the external control device and outputs a first detection signal to the control device. The detection terminal 63 is an example of a "first detection terminal."

[0076] The detection terminal 64 is electrically connected to the fifth electrode 22 (source electrode) of each second semiconductor element 2. The detection terminal 64 outputs a second detection signal indicating the conduction state of each second semiconductor element 2. In the semiconductor device A1, a voltage (a voltage corresponding to the source current) applied to the fifth electrode 22 of each second semiconductor element 2 is output from the detection terminal 64 as the second detection signal. The detection terminal 64 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. The portion of the detection terminal 64 covered by the sealing member 8 is joined to the pad portion 551a of the wiring portion 551. The portion of the detection terminal 64 exposed from the sealing member 8 is connected to the external control device and outputs a second detection signal to the control device. The detection terminal 64 is an example of a "second detection terminal."

[0077] The detection terminal 65 is electrically connected to the first electrode 11 (drain electrode) of each first semiconductor element 1. The detection terminal 65 outputs a voltage (a voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1. The detection terminal 65 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. The portion of the detection terminal 65 covered by the sealing member 8 is joined to the wiring portion 561. The portion of the detection terminal 65 exposed from the sealing member 8 is connected to the external control device, and outputs a voltage (a voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1 to the control device.

[0078] Each of the multiple connection members 7 electrically connects two parts spaced apart from each other. As described above, the multiple connection members 7 include multiple connection members 711, 712, 721 to 723, 731 to 733, 741 to 743, and 751 to 753. Each of the multiple connection members 7 is, for example, a bonding wire. Some of the multiple connection members 7 (for example, the multiple connection members 711, 712) may be a metal plate material instead of a bonding wire. Each of the multiple connection members 7 may be made of gold, aluminum, or copper. Although the wire diameters of the plurality of connecting members 711, 712, 721 to 723, 731 to 733, 741 to 743, and 751 to 753 are not particularly limited, it is preferable that the wire diameter of each of the plurality of connecting members 711, 712 is larger than the wire diameter of each of the plurality of connecting members 721 to 723, 731 to 733, 741 to 743, and 751 to 753. This is because the main current flows through the plurality of connecting members 711, 712.

[0079] 3 and 5, the multiple connection members 711 are bonded to the second electrodes 12 (source electrodes) of the multiple first semiconductor elements 1 and the wiring portion 513, thereby providing electrical continuity therebetween. Unlike the illustrated example, the connection members 711 may be bonded to the upper surfaces of the multiple metal members 59, rather than to the wiring portion 513. The connection members 712 are bonded to the fifth electrodes 22 (source electrodes) of the multiple second semiconductor elements 2 and the wiring portion 512, thereby providing electrical continuity therebetween, as shown in FIGS.

[0080] As shown in FIGS. 3, 5, and 9, the connection member 721 is bonded to the pad portion 521b of the wiring portion 521 and the wiring portion 522, and electrically connects the wiring portion 521 and the wiring portion 522. As shown in FIG. 5, the connection member 721 extends in the x direction in a plan view. Furthermore, the connection member 721 intersects with each wiring portion 523 that is located further in the x1 direction than the wiring portion 522 in a plan view. In the illustrated example, the connection member 721 overlaps with each connection member 722 bonded to the wiring portion 523 in a plan view (see FIG. 5), but unlike this example, the overlapping is not necessary. The connection member 721 is located above each wiring portion 523 and each connection member 722 in the z direction. The connection member 721 is an example of a "first connection member."

[0081] 3, 5, and 9, each of the plurality of connection members 722 is joined to the wiring portion 522 and each wiring portion 523, respectively, and electrically connects the wiring portion 522 and each wiring portion 523. As shown in Fig. 5, each connection member 722 extends in the x-direction in plan view. Each connection member 722 is an example of a "second connection member."

[0082] 3 and 5, each of the plurality of connection members 723 is bonded to each wiring portion 523 and the third electrode 13 (gate electrode) of each first semiconductor element 1, respectively, and electrically connects each wiring portion 523 and the third electrode 13 of each first semiconductor element 1. Each connection member 723 is an example of a "third connection member."

[0083] As shown in FIGS. 4, 5, and 10, the connection member 731 is bonded to the pad portion 531b of the wiring portion 531 and the wiring portion 532, and electrically connects the wiring portion 531 and the wiring portion 532. As shown in FIG. 5, the connection member 731 extends in the x direction in a plan view. Furthermore, the connection member 731 intersects with each wiring portion 533 that is located further in the x1 direction than the wiring portion 532 in a plan view. In the illustrated example, the connection member 731 overlaps with each connection member 732 bonded to the wiring portion 532 in a plan view (see FIG. 5), but unlike this example, the overlapping is not necessary. As shown in FIG. 10, the connection member 731 is located above each wiring portion 533 and each connection member 732 in the z direction. The connection member 731 is an example of a "seventh connection member."

[0084] 4 and 5, each of the plurality of connection members 732 is joined to the wiring portion 532 and each of the wiring portions 533, respectively, and electrically connects the wiring portion 532 and each of the wiring portions 533. As shown in Fig. 5, each connection member 732 extends in the x-direction in plan view. Each connection member 732 is an example of an "eighth connection member."

[0085] 4 and 5, each of the plurality of connection members 733 is bonded to a corresponding wiring portion 533 and a corresponding sixth electrode 23 (gate electrode) of a corresponding second semiconductor element 2, thereby electrically connecting the corresponding wiring portion 533 and the corresponding sixth electrode 23 of the corresponding second semiconductor element 2. Each connection member 733 is an example of a "ninth connection member."

[0086] As shown in FIGS. 3 and 5, the connection member 741 is bonded to the pad portion 541b of the wiring portion 541 and the wiring portion 542, and electrically connects the wiring portion 541 and the wiring portion 542. As shown in FIG. 5, the connection member 741 extends in the x direction in a plan view. Furthermore, the connection member 741 intersects with each wiring portion 543 that is located further in the x1 direction than the wiring portion 542 in a plan view. In the illustrated example, the connection member 741 overlaps with each connection member 742 bonded to the wiring portion 543 in a plan view (see FIG. 5), but unlike this example, the overlapping is not necessary. The connection member 741 is located above each wiring portion 543 and each connection member 742 in the z direction. The connection member 741 is an example of a "fourth connection member."

[0087] 3 and 5, each of the plurality of connection members 742 is joined to the wiring portion 542 and each wiring portion 543, respectively, and electrically connects the wiring portion 542 and each wiring portion 543. As shown in Fig. 5, each connection member 742 extends in the x-direction in plan view. Each connection member 742 is an example of a "fifth connection member."

[0088] 3 and 5, each of the plurality of connection members 743 is bonded to each wiring portion 543 and the second electrode 12 (source electrode) of each first semiconductor element 1, respectively, and electrically connects each wiring portion 543 and the second electrode 12 of each first semiconductor element 1. Each connection member 743 is an example of a "sixth connection member."

[0089] As shown in FIGS. 4 and 5, the connection member 751 is bonded to the pad portion 551b of the wiring portion 551 and the wiring portion 552, and electrically connects the wiring portion 551 and the wiring portion 552. As shown in FIG. 5, the connection member 751 extends in the x direction in a plan view. Furthermore, the connection member 751 intersects with each wiring portion 553 that is located further in the x1 direction than the wiring portion 552 in a plan view. In the illustrated example, the connection member 751 overlaps with each connection member 752 bonded to the wiring portion 553 in a plan view (see FIG. 5), but unlike this example, the overlapping is not necessary. The connection member 751 is located above the wiring portions 553 and the connection members 752 in the z direction. The connection member 731 is an example of a "tenth connection member."

[0090] 4 and 5, each of the plurality of connection members 752 is joined to the wiring portion 552 and each wiring portion 553, respectively, and electrically connects the wiring portion 552 and each wiring portion 553. As shown in Fig. 5, each connection member 752 extends in the x-direction in plan view. Each connection member 752 is an example of an "eleventh connection member."

[0091] 4 and 5, each of the plurality of connection members 753 is bonded to the corresponding wiring portion 553 and the fifth electrode 22 (source electrode) of the corresponding second semiconductor element 2, respectively, and electrically connects the corresponding wiring portion 553 and the fifth electrode 22 of the corresponding second semiconductor element 2. Each connection member 753 is an example of a "twelfth connection member."

[0092] The sealing member 8 covers the first semiconductor elements 1, the second semiconductor elements 2, a portion of the support member 3, the insulating substrates 41, portions of the wiring portions 511-514, the wiring portions 521-523, 531-533, 541-543, 551-553, 561, 571, 572, portions of each pair of control terminals 61, 62, portions of the detection terminals 63-65, and the connecting members 7. The sealing member 8 is made of an insulating resin material such as epoxy resin. As shown in FIG. 5, the sealing member 8 is rectangular in plan view.

[0093] As shown in FIGS. 1, 5, and 9 to 12, the sealing member 8 has a resin main surface 81, a resin back surface 82, and multiple resin side surfaces 831 to 834. As shown in FIGS. 9 to 12, the resin main surface 81 and the resin back surface 82 are spaced apart in the z direction. The resin main surface 81 faces the z2 direction, and the resin back surface 82 faces the z1 direction. As shown in FIGS. 5, 9, and 10, the resin side surface 831 and the resin side surface 832 are spaced apart in the x direction. The resin side surface 831 faces the x1 direction, and the resin side surface 832 faces the x2 direction. The pair of control terminals 61, 62 and the multiple detection terminals 63 to 65 each protrude from the resin side surface 831. As shown in FIGS. 5, 11, and 12, the resin side surface 833 and the resin side surface 834 are spaced apart in the y direction. The resin side surface 833 faces the y1 direction, and the resin side surface 834 faces the y2 direction.

[0094] The sealing member 8 has a resin side surface 832 with cutouts formed in the resin main surface 81 and the resin back surface 82. The cutouts expose the first power terminal portion 501, the second power terminal portion 502, the third power terminal portion 503, and the fourth power terminal portion 504 from the sealing member 8, as shown in FIGS.

[0095] The semiconductor device A1 has the following advantages.

[0096] In the semiconductor device A1, the wiring portion 522 and each wiring portion 523 are interposed in the conduction path between the wiring portion 521 connected to the control terminal 61 and the third electrode 13 of each first semiconductor element 1. The wiring portion 522 and each wiring portion 523 are separated from the wiring portion 521. In a semiconductor device different from the semiconductor device A1, the wiring portion 521, the wiring portion 522, and each wiring portion 523 are integrally formed. In this configuration, the wiring portion 521, the wiring portion 522, and each wiring portion 523 are configured as a single strip-shaped wiring, and the connecting member 723 is connected to this strip-shaped wiring rather than to each wiring portion 523. However, in this configuration, the distance of the conduction path from each third electrode 13 to each control terminal 61 may be short, and unless a resistor (e.g., a gate resistor) is connected to each third electrode 13, unexpected oscillation may occur in the first drive signal (e.g., a gate voltage). On the other hand, in semiconductor device A1, wiring portion 522 and each wiring portion 523 are separated from each wiring portion 521, and connection members 721, 722, and 723 are used to electrically connect wiring portion 521 to third electrodes 13 (gate electrodes) of each first semiconductor element 1. This configuration allows the distance of the conductive path from each third electrode 13 to control terminal 61 to be extended compared to when wiring portion 521, wiring portion 522, and each wiring portion 523 are configured as a single strip-shaped wiring. Therefore, the transmission path of the first drive signal from control terminal 61 to first semiconductor element 1 can be lengthened, thereby increasing the inductance component of the transmission path. This makes it possible for semiconductor device A1 to suppress oscillation of the first drive signal without connecting a resistor (e.g., a gate resistor) to each third electrode 13.

[0097] In the semiconductor device A1, a plurality of first semiconductor elements 1 are arranged along the x direction. Furthermore, the control terminal 61 is disposed on one side of the x direction (the x1 direction in the example of FIG. 5 ) relative to the plurality of first semiconductor elements 1. In this configuration, the first semiconductor element 1 closest to the control terminal 61 (the first semiconductor element 1 located furthest in the x1 direction in FIG. 5 ) tends to have a shorter conduction path from the third electrode 13 of the first semiconductor element 1 to the control terminal 61 unless the wiring portion 521, the wiring portion 522, and each wiring portion 523 are separated. In other words, the likelihood of oscillation of the first drive signal varies for each first semiconductor element 1 depending on the arrangement of the plurality of first semiconductor elements 1 and the arrangement of the control terminal 61. Therefore, providing the wiring portion 522 and each wiring portion 523 separated from the wiring portion 521 is effective in suppressing oscillation of the first drive signal input to the first semiconductor element 1 closest to the control terminal 61.

[0098] The semiconductor device A1 includes a wiring portion 523 for each of the multiple first semiconductor elements 1. All of the wiring portions 523 are electrically connected to the wiring portion 522. In this configuration, the wiring portion 522 and two wiring portions 523 are interposed in the conduction path between the third electrodes 13 of the first semiconductor elements 1. This allows the distance of the conduction path between the third electrodes 13 to be extended compared to when a single wiring portion (e.g., the strip-shaped wiring) is interposed. This suppresses parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel, due to the formation of a loop path passing through the first electrode 11 and the third electrode 13 of each first semiconductor element 1. In other words, the semiconductor device A1 can suppress parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel. Note that parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel can also be suppressed by equalizing the conduction path from the first power terminal portion 501 to the first electrode 11 of each first semiconductor element 1. However, when there are limitations on the positional relationship between the multiple first semiconductor elements 1 and the first power terminal portion 501, or when the frequency of the parasitic resonance is high (for example, several hundred MHz), it is preferable to extend the distance of the conductive path between each third electrode 13, as in the present disclosure, in order to suppress the parasitic resonance.

[0099] In the semiconductor device A1, some of the multiple wiring portions 523 are arranged on one side of the wiring portion 522 in the x-direction, and some are arranged on the other side of the wiring portion 522 in the x-direction. This configuration makes it possible to reduce the difference in distance between the conduction paths from the control terminal 61 to each third electrode 13. In particular, the semiconductor device A1 has an even number of wiring portions 523, and the same number of wiring portions 523 are arranged on either side of the wiring portion 522. This reduces the difference in distance between the conduction paths from the control terminal 61 to each third electrode 13, which is preferable for equalizing the conduction paths.

[0100] In the semiconductor device A1, the connecting members 721, 722, and 723 are, for example, bonding wires. The parasitic inductance component from the control terminal 61 to the third electrode 13 of each first semiconductor element 1 can be adjusted by adjusting the parasitic inductance component of each connecting member 721, 722, and 723. The parasitic inductance component of each connecting member 721, 722, and 723 can be adjusted by adjusting the length of each connecting member 721, 722, and 723. Furthermore, the length of a bonding wire is easier to adjust than a metal plate-like member. Therefore, in the semiconductor device A1, it is easy to fine-tune the parasitic inductance component from the control terminal 61 to each third electrode 13 in accordance with variations in the characteristics of each first semiconductor element 1.

[0101] The semiconductor device A1 includes a wiring portion 543 for each of the multiple first semiconductor elements 1. All of the wiring portions 543 are electrically connected to the wiring portion 542. In this configuration, the wiring portion 542 and two wiring portions 543 are interposed in the conductive path between the second electrodes 12 of the first semiconductor elements 1. This allows the distance of the conductive path between the second electrodes 12 to be extended compared to when a single wiring portion (e.g., a plurality of wiring portions 541 to 543 integrally formed) is interposed. Parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel can occur not only in a loop path passing through the first electrode 11 and the third electrode 13 of each first semiconductor element 1, but also in a loop path passing through the second electrode 12 and the third electrode 13 of each first semiconductor element 1. Therefore, by extending the distance of the conductive path between the second electrodes 12, parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel can be suppressed.

[0102] In the semiconductor device A1, the wiring portion 532 and each wiring portion 533 are interposed in the conduction path between the wiring portion 531 connected to the control terminal 62 and the sixth electrode 23 of each second semiconductor element 2. The wiring portion 532 and each wiring portion 533 are separated from the wiring portion 531. With this configuration, the distance of the conduction path from each sixth electrode 23 to the control terminal 62 can be extended, similar to the distance of the conduction path from each third electrode 13 to the control terminal 61. Therefore, the transmission path of the second drive signal from the control terminal 62 to the second semiconductor element 2 can be lengthened, thereby increasing the inductance component of the transmission path. As a result, the semiconductor device A1 can suppress oscillation of the second drive signal without connecting a resistor (e.g., a gate resistor) to each sixth electrode 23.

[0103] In the semiconductor device A1, multiple second semiconductor elements 2 are arranged along the x direction. Furthermore, the control terminal 62 is arranged on one side of the multiple second semiconductor elements 2 in the x direction (the x1 direction in the example of FIG. 5). In this configuration, the second semiconductor element 2 closest to the control terminal 62 (the second semiconductor element 2 located furthest in the x1 direction in FIG. 5) tends to have a short conduction path from the sixth electrode 23 of the second semiconductor element 2 to the control terminal 62 unless the wiring portion 531, the wiring portion 532, and each wiring portion 533 are separated. In other words, the arrangement of the multiple second semiconductor elements 2 and the arrangement of the control terminal 62 easily causes oscillation of the second drive signal in each second semiconductor element 2. Therefore, providing the wiring portion 532 and each wiring portion 533 separated from the wiring portion 531 is effective in suppressing oscillation of the second drive signal input to the second semiconductor element 2 closest to the control terminal 62.

[0104] The semiconductor device A1 includes one wiring portion 533 for each of the plurality of second semiconductor elements 2. All of the wiring portions 533 are electrically connected to the wiring portion 532. In this configuration, the wiring portion 532 and two wiring portions 533 are interposed in the conductive path between the sixth electrodes 23 of the second semiconductor elements 2. This allows the distance of the conductive path between the sixth electrodes 23 to be extended compared to when a single wiring portion (e.g., a plurality of wiring portions 531 to 533 integrally formed) is interposed. This suppresses parasitic resonance that occurs when a loop path passing through the fourth electrode 21 and the sixth electrode 23 of each second semiconductor element 2 is formed when the plurality of second semiconductor elements 2 are connected in parallel. In other words, the semiconductor device A1 can suppress parasitic resonance that occurs when the plurality of second semiconductor elements 2 are connected in parallel.

[0105] In the semiconductor device A1, some of the multiple wiring portions 533 are arranged on one side of the wiring portion 532 in the x-direction, and some are arranged on the other side of the wiring portion 532 in the x-direction. This configuration makes it possible to reduce the difference in distance between the conduction paths from the control terminal 62 to each sixth electrode 23. In particular, the semiconductor device A1 has an even number of wiring portions 533, and the same number of wiring portions 533 are arranged on either side of the wiring portion 532. This reduces the difference in distance between the conduction paths from the control terminal 62 to each sixth electrode 23, which is preferable for equalizing the conduction paths.

[0106] In the semiconductor device A1, the connecting members 731, 732, and 733 are, for example, bonding wires. The parasitic inductance component from the control terminal 62 to the sixth electrode 23 of each second semiconductor element 2 can be adjusted by adjusting the parasitic inductance component of each connecting member 731, 732, and 733. The parasitic inductance component of each connecting member 731, 732, and 733 can be adjusted by adjusting the length of each connecting member 721, 722, and 723. Furthermore, the length of a bonding wire is easier to adjust than a metal plate-like member. Therefore, in the semiconductor device A1, it is easy to fine-tune the parasitic inductance component from the control terminal 62 to each sixth electrode 23 in accordance with variations in the characteristics of each second semiconductor element 2.

[0107] The semiconductor device A1 includes a wiring portion 553 for each of the multiple second semiconductor elements 2. All of the wiring portions 553 are electrically connected to the wiring portion 552. This configuration allows the conduction distance between the fifth electrodes 22 to be extended, as well as the distance of the conduction path between the second electrodes 12. Parasitic resonance that occurs when multiple second semiconductor elements 2 are connected in parallel can occur not only due to a loop path passing through the fourth electrode 21 and the sixth electrode 23 of each second semiconductor element 2, but also due to a loop path passing through the fifth electrode 22 and the sixth electrode 23 of each second semiconductor element 2. Therefore, by extending the distance of the conduction path between the fifth electrodes 22, parasitic resonance that occurs when multiple second semiconductor elements 2 are connected in parallel can be suppressed.

[0108] Figures 15 to 17 show a semiconductor device A2 according to the second embodiment. Figure 15 is a perspective view showing the semiconductor device A2. Figure 16 is a plan view showing the semiconductor device A2, with a portion (top plate 92) of a case 9 described later omitted. Figure 17 is a cross-sectional view taken along line XVII-XVII in Figure 16, with the top plate 92 of the case 9 indicated by an imaginary line (two-dot chain line).

[0109] In the semiconductor device A1, a plurality of first semiconductor elements 1 are mounted on the conductive plate 31, and a plurality of second semiconductor elements 2 are mounted on the conductive plate 32, but in the semiconductor device A2, a plurality of first semiconductor elements 1 are bonded to the wiring portion 511, and a plurality of second semiconductor elements 2 are bonded to the wiring portion 513. Also, in the semiconductor device A1, the first power terminal portion 501 and the second power terminal portion 502 overlap in a planar view, and the third power terminal portion 503 and the fourth power terminal portion 504 overlap in a planar view, but in the semiconductor device A2, the first power terminal portion 501 and the second power terminal portion 502 are adjacent in a planar view, and the third power terminal portion 503 and the fourth power terminal portion 504 are adjacent in a planar view.

[0110] 15 to 17, the semiconductor device A2 includes a case 9 instead of a sealing member 8. The case 9 is formed in a substantially rectangular parallelepiped shape and houses a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, an insulating substrate 41, a plurality of wiring portions 511 to 513, 521 to 523, 531 to 533, 541 to 543, 551 to 553, and a plurality of connecting members 7. The case 9 is made of a synthetic resin having electrical insulation properties and excellent heat resistance, such as PPS (polyphenylene sulfide).

[0111] The case 9 includes a heat sink 91 as a bottom plate, a frame 93 fixed to the surface of the heat sink 91 on the z2 direction side, and a top plate 92 fixed to the frame 93. The top plate 92 closes the z2 direction side of the frame 93 and faces the heat sink 91, which closes the z1 direction side of the frame 93. The top plate 92, the heat sink 91, and the frame 93 define an accommodation space for the above components inside the case 9.

[0112] As shown in FIGS. 15 and 16, the case 9 includes terminal blocks 941 to 944. These terminal blocks 941 to 944 are formed integrally with the frame portion 93. The terminal blocks 941 and 942 are connected to a side wall 931 (see FIG. 16) on the x2 direction side of the frame portion 93. The terminal blocks 941 and 942 are arranged along the y direction. The terminal block 941 is located further in the y2 direction than the terminal block 942. The terminal blocks 943 and 944 are connected to a side wall 932 (see FIG. 16) on the x1 direction side of the frame portion 93. The terminal blocks 943 and 944 are arranged along the y direction. The terminal block 943 is located further in the y2 direction than the terminal block 944.

[0113] 16 and 17, semiconductor device A2 includes a plurality of wiring portions 511 to 513, 521 to 523, 531 to 533, 541 to 543, 551 to 553, and 573. As can be seen from Fig. 16 and 17, the plurality of wiring portions 511 to 513, 521 to 523, 531 to 533, 541 to 543, and 551 to 553 are formed on the main surface 411 of insulating substrate 41. Wiring portion 573 is formed on the back surface 412 of insulating substrate 41, as shown in Fig. 17.

[0114] The two wiring portions 511 are arranged along the x direction and are spaced apart from each other. The two wiring portions 511 are electrically connected to each other by a connecting member 519a. The connecting member 519a is a conductive plate material made of, for example, copper or a copper alloy. The material of the connecting member 519a is not limited to copper or a copper alloy. The two wiring portions 511 are joined to a plurality of first semiconductor elements 1 and are electrically connected to the first electrodes 11 (drain electrodes) of each of the first semiconductor elements 1.

[0115] The two wiring portions 512 are arranged along the x direction and are spaced apart from each other. The two wiring portions 512 are electrically connected to each other by a conductive linking member 519b. The linking member 519b is a conductive plate material made of, for example, copper or a copper alloy. The material of the linking member 519b is not limited to copper or a copper alloy. The two wiring portions 512 are electrically connected to the fifth electrodes 22 (source electrodes) of each second semiconductor element 2 via a plurality of connection members 712.

[0116] The two wiring portions 513 are arranged along the x direction and are spaced apart from each other. The two wiring portions 513 are electrically connected to each other by a conductive connecting member 519c. The connecting member 519c is a conductive plate material made of, for example, copper or a copper alloy. The material of the connecting member 519c is not limited to copper or a copper alloy. The two wiring portions 513 are electrically connected to the second electrodes 12 (source electrodes) of each first semiconductor element 1 via a plurality of connecting members 711. Furthermore, the two wiring portions 513 are joined to a plurality of second semiconductor elements 2 and are electrically connected to the fourth electrodes 21 (drain electrodes) of each second semiconductor element 2.

[0117] As shown in FIG. 16, the semiconductor device A2 includes two wiring portions 521, two wiring portions 531, two wiring portions 541, and two wiring portions 551. The two wiring portions 521 are adjacent to each other in the x direction and spaced apart from each other. The two wiring portions 521 are electrically connected by a connection member 771. The two wiring portions 531 are adjacent to each other in the x direction and spaced apart from each other. The two wiring portions 531 are electrically connected by a connection member 772. The two wiring portions 541 are adjacent to each other in the x direction and spaced apart from each other. The two wiring portions 541 are electrically connected by a connection member 773. The two wiring portions 551 are adjacent to each other in the x direction and spaced apart from each other. The two wiring portions 551 are electrically connected by a connection member 774. Each of the connection members 771 to 774 is, for example, a bonding wire. The connecting members 771 to 774 are made of gold, copper, aluminum, or an alloy containing any of these.

[0118] 16, one wiring portion 522 and multiple wiring portions 523 are arranged along the x direction for each of two wiring portions 521. In the illustrated example, the semiconductor device A2 includes two sets, each set consisting of one wiring portion 521, one wiring portion 522, and three wiring portions 523. These two sets are arranged on either side of the two wiring portions 521 in the x direction. In each set, the wiring portions 521, 522, and 523 are appropriately connected to each other by connecting members 721 and 722, similar to the semiconductor device A1. Furthermore, each wiring portion 523 is connected to the third electrode 13 (gate electrode) of each first semiconductor element 1 by a connecting member 723, similar to the semiconductor device A1.

[0119] 16, one wiring portion 532 and multiple wiring portions 533 are arranged along the x direction for each of two wiring portions 531. In the illustrated example, the semiconductor device A2 includes two sets, each set consisting of one wiring portion 531, one wiring portion 532, and three wiring portions 533. These two sets are arranged on either side of the two wiring portions 531 in the x direction. In each set, the wiring portions 531, 532, and 533 are appropriately connected to each other by connecting members 731 and 732, similar to the semiconductor device A1. Furthermore, each wiring portion 533 is connected to the sixth electrode 23 (gate electrode) of each second semiconductor element 2 by a connecting member 733, similar to the semiconductor device A1.

[0120] 16, one wiring portion 542 and a plurality of wiring portions 543 are arranged along the x direction for each of two wiring portions 541. In the illustrated example, the semiconductor device A2 includes two sets, each set consisting of one wiring portion 541, one wiring portion 542, and three wiring portions 543. These two sets are arranged on either side of the two wiring portions 541 in the x direction. In each set, the wiring portions 541, 542, and 543 are appropriately connected to each other by connecting members 741 and 742, similar to the semiconductor device A1. Furthermore, each wiring portion 543 is connected to the second electrode 12 (source electrode) of each first semiconductor element 1 by a connecting member 743, similar to the semiconductor device A1.

[0121] As shown in FIG. 16 , one wiring portion 552 and multiple wiring portions 553 are arranged along the x direction for each of two wiring portions 551. In the illustrated example, the semiconductor device A2 includes two sets, each set consisting of one wiring portion 551, one wiring portion 552, and three wiring portions 553. These two sets are arranged on either side of the two wiring portions 551 in the x direction. In each set, the wiring portions 551, 552, and 553 are appropriately connected to each other by connecting members 751 and 752, similar to the semiconductor device A1. Furthermore, each wiring portion 553 is connected to the fifth electrode 22 (source electrode) of each second semiconductor element 2 by a connecting member 753, similar to the semiconductor device A1.

[0122] Wiring portion 573 is formed, for example, on substantially the entire surface of rear surface 412 of insulating substrate 41. The area where wiring portion 573 is formed is not particularly limited. Wiring portion 573 is made of copper or a copper alloy. Wiring portion 573 is joined to heat sink 91.

[0123] As shown in FIGS. 15 and 16, the semiconductor device A2 includes a first power terminal 601, a second power terminal 602, a third power terminal 603, and a fourth power terminal 604.

[0124] The first power terminal 601 is joined to the wiring portion 511 inside the case 9. This allows the first power terminal 601 to be electrically connected to each of the first electrodes 11 (drain electrodes) of the multiple first semiconductor elements 1. The first power terminal 601 includes a first power terminal portion 501. As shown in FIGS. 15 and 16 , the first power terminal portion 501 is located on the upper surface (surface on the z2 direction side) of the terminal block 941.

[0125] The second power terminal 602 is joined to the wiring portion 512 inside the case 9. This establishes electrical continuity between the second power terminal 602 and the fifth electrodes 22 (source electrodes) of the second semiconductor elements 2. The second power terminal 602 includes a second power terminal portion 502. As shown in FIGS. 15 and 16 , the second power terminal portion 502 is located on the upper surface (surface on the z2 direction side) of the terminal block 942.

[0126] The third power terminal 603 and the fourth power terminal 604 are each joined to the wiring portion 513 inside the case 9. As a result, the third power terminal 603 and the fourth power terminal 604 are each electrically connected to the second electrodes 12 (source electrodes) of the multiple first semiconductor elements 1 and the fourth electrodes 21 (drain electrodes) of the multiple second semiconductor elements 2. The third power terminal 603 includes a third power terminal portion 503. As shown in FIGS. 15 and 16, the third power terminal portion 503 is located on the upper surface (surface on the z2 direction side) of the terminal block 943. The fourth power terminal 604 includes a fourth power terminal portion 504. As shown in FIGS. 15 and 16, the fourth power terminal portion 504 is located on the upper surface (surface on the z2 direction side) of the terminal block 944.

[0127] In the semiconductor device A2, the control terminal 61 is not connected to either of the two wiring portions 521, but is electrically connected to one of the two wiring portions 521 through a connecting member 761 inside the case 9. The control terminal 62 is not connected to either of the two wiring portions 531, but is electrically connected to one of the two wiring portions 531 through a connecting member 762 inside the case 9. The detection terminal 63 is not connected to either of the two wiring portions 541, but is electrically connected to one of the two wiring portions 541 through a connecting member 763 inside the case 9. The detection terminal 64 is not connected to either of the two wiring portions 551, but is electrically connected to one of the two wiring portions 551 through a connecting member 764 inside the case 9. Each of the connecting members 761 to 764 is, for example, a bonding wire. The constituent material of each of the connecting members 761 to 764 is gold, copper, aluminum, or an alloy containing any of these.

[0128] As shown in FIGS. 16 and 17 , in the semiconductor device A2, a wiring portion 522 and each wiring portion 523 are interposed in the conduction path between the wiring portion 521 electrically connected to the control terminal 61 and the third electrode 13 of each first semiconductor element 1. The wiring portion 522 and each wiring portion 523 are separated from the wiring portion 521. Therefore, similar to the semiconductor device A1, the semiconductor device A2 can lengthen the transmission path of the first drive signal from the control terminal 61 to each first semiconductor element 1, thereby increasing the inductance component of the transmission path. This allows the semiconductor device A2 to suppress oscillation of the first drive signal without connecting a resistor (e.g., a gate resistor) to each third electrode 13, similar to the semiconductor device A1. Furthermore, the semiconductor device A2 achieves the same effects as the semiconductor device A1 by using a configuration common to the semiconductor device A1.

[0129] Fig. 18 shows a semiconductor device A3 according to the third embodiment. Fig. 18 is a plan view showing the semiconductor device A3, and the sealing member 8 is shown by an imaginary line (two-dot chain line).

[0130] The semiconductor devices A1 and A2 each include a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2. On the other hand, the semiconductor device A3 includes a plurality of first semiconductor elements 1 but does not include a single second semiconductor element 2.

[0131] 18, each first semiconductor element 1 is bonded to a wiring portion 511, similar to the semiconductor device A2. The semiconductor device A3 does not include multiple second semiconductor elements 2, and therefore has fewer wiring portions than the semiconductor device A2. In the semiconductor device A3, the wiring portion 561 is electrically connected to the wiring portion 511 via a connecting member 781, and is thereby electrically connected to the first electrode 11 (drain electrode) of each first semiconductor element 1. The connecting member 781 is, for example, a bonding wire.

[0132] As shown in FIG. 18 , in the semiconductor device A3, similar to the semiconductor devices A1 and A2, a wiring portion 522 and each wiring portion 523 are interposed in the conduction path between the wiring portion 521 electrically connected to the control terminal 61 and the third electrode 13 of each first semiconductor element 1. The wiring portion 522 and each wiring portion 523 are separated from the wiring portion 521. Therefore, similar to the semiconductor devices A1 and A2, the semiconductor device A3 can lengthen the transmission path of the first drive signal from the control terminal 61 to the first semiconductor element 1, thereby increasing the inductance component of the transmission path. This allows the semiconductor device A3 to suppress oscillation of the first drive signal without connecting a resistor (e.g., a gate resistor) to each third electrode 13, similar to the semiconductor devices A1 and A2. Furthermore, the semiconductor device A3 achieves the same effects as the semiconductor devices A1 and A2 by using the same configuration as the semiconductor devices A1 and A2.

[0133] The configuration described with reference to FIG. 18, which does not include any of the plurality of second semiconductor elements 2, is not limited to the configuration shown in the semiconductor device A3, and may be applied appropriately to each of the semiconductor devices A1 and A2.

[0134] 19 to 21 show a semiconductor device A4 according to the fourth embodiment. FIG. 19 is a plan view showing the semiconductor device A4, with the sealing member 8 indicated by an imaginary line (two-dot chain line). FIG. 20 is an exploded perspective view showing a portion of the semiconductor device A4. FIG. 20 shows a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a support member 3, and a multilayer wiring substrate 40 (described later). FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 19.

[0135] In each of the semiconductor devices A1 to A3, the multiple first semiconductor elements 1 are arranged along the x direction, but in the semiconductor device A4, the multiple first semiconductor elements 1 are arranged along the y direction. Similarly, in each of the semiconductor devices A1 to A3, the multiple second semiconductor elements 2 are arranged along the x direction, but in the semiconductor device A4, the multiple second semiconductor elements 2 are arranged along the y direction. In the semiconductor device A4, as shown in FIGS. 19 and 20, the first power terminal portion 501, the second power terminal portion 502, and the third power terminal portion 503 are each arranged further in the direction (x direction) than the multiple first semiconductor elements 1, which is perpendicular to the arrangement direction (y direction) of the multiple first semiconductor elements 1. Similarly, the first power terminal portion 501, the second power terminal portion 502, and the third power terminal portion 503 are each arranged further in the direction (x direction) than the multiple second semiconductor elements 2, which is perpendicular to the arrangement direction (y direction) of the multiple second semiconductor elements 2.

[0136] As shown in Figures 19 to 21, the semiconductor device A4 includes a multilayer wiring substrate 40. The multilayer wiring substrate 40 includes an insulating substrate 41 and multiple wiring portions 511-513, 521-523, 531-533, 541-543, and 551-553. The multilayer wiring substrate 40 forms conduction paths for the main current and control signals in the semiconductor device A4. As shown in Figures 19 to 21, the wiring portions 511-513, 521-523, 531-533, 541-543, and 551-553 in the semiconductor device A4 differ in shape and relative position from those in the semiconductor device A1. However, the electrical conduction relationships between the wiring portions 511-513, 521-523, 531-533, 541-543, and 551-553 are the same as those in the semiconductor device A1.

[0137] 20 and 21, the multilayer wiring board 40 has a plurality of openings 40A and a plurality of recesses 40B formed therein. As shown in FIG. 21, the multilayer wiring board 40 is disposed on the support member 3 by the plurality of openings 40A so as not to come into contact with the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2. Also, as shown in FIG. 21, the multilayer wiring board 40 has a portion of each of the wiring portions 512 and 513 exposed in the plurality of recesses 40B. A connecting member 711 is connected to the portion of the wiring portion 513 exposed in the plurality of recesses 40B, and a connecting member 712 is connected to the portion of the wiring portion 512 exposed in the plurality of recesses 40B.

[0138] 19, in the semiconductor device A4, a wiring portion 522 and each wiring portion 523 are interposed in the conduction path between the wiring portion 521 electrically connected to the control terminal 61 and the third electrode 13 of each first semiconductor element 1. The wiring portion 522 and each wiring portion 523 are separated from the wiring portion 521. Therefore, like the semiconductor devices A1 to A3, the semiconductor device A4 can lengthen the transmission path of the first drive signal from the control terminal 61 to each first semiconductor element 1, thereby increasing the inductance component of the transmission path. As a result, like the semiconductor devices A1 to A3, the semiconductor device A4 can suppress oscillation of the first drive signal without connecting a resistor (e.g., a gate resistor) to each third electrode 13. Furthermore, the semiconductor device A4 achieves the same effects as the semiconductor devices A1 to A3 by using a configuration common to the semiconductor devices A1 to A3.

[0139] Fig. 22 shows a semiconductor device A5 according to the fifth embodiment. Fig. 22 is a plan view showing the semiconductor device A5, and the sealing member 8 is shown by an imaginary line (two-dot chain line).

[0140] 22, compared to the semiconductor device A1, the semiconductor device A5 does not include the plurality of wiring portions 522, 523, 532, 533, 542, 543, 552, and 553. Accordingly, compared to the semiconductor device A1, the semiconductor device A5 does not include the plurality of connecting members 721, 722, 731, 732, 741, 742, 751, and 752.

[0141] In the semiconductor device A5, the wiring portion 521 includes a pad portion 521a, a connecting portion 521c, and a strip portion 521d. The strip portion 521d extends along the x direction in a plan view. The strip portion 521d is located on one side of the pad portion 521a in the x direction (the x2 direction in the example shown in FIG. 22). The strip portion 521d is connected to the pad portion 521a by the connecting portion 521c.

[0142] In the semiconductor device A5, the wiring portion 531 includes a pad portion 531a, a connecting portion 531c, and a strip portion 531d. The strip portion 521d extends along the x-direction in a plan view. The strip portion 521d is located on one side of the pad portion 521a in the x-direction (the x2 direction in the example shown in FIG. 22). The strip portion 521d is connected to the pad portion 521a by the connecting portion 521c.

[0143] In the semiconductor device A5, the wiring portion 541 includes a pad portion 541a, a connecting portion 541c, and a strip portion 541d. The strip portion 541d extends along the x direction in a plan view. The strip portion 541d is located on one side of the pad portion 541a in the x direction (the x2 direction in the example shown in FIG. 22). The strip portion 541d is connected to the pad portion 541a by the connecting portion 541c.

[0144] In the semiconductor device A5, the wiring portion 551 includes a pad portion 551a, a connecting portion 551c, and a strip portion 551d. The strip portion 551d extends along the x direction in a plan view. The strip portion 551d is located on one side of the pad portion 551a in the x direction (the x2 direction in the example shown in FIG. 22). The strip portion 551d is connected to the pad portion 551a by the connecting portion 551c.

[0145] As shown in FIG. 22, the strip-shaped portion 521d and the strip-shaped portion 541d are located on the opposite side of the second semiconductor elements 2 from the side on which the plurality of first semiconductor elements 1 are arranged in the y direction (i.e., the y1 direction). The strip-shaped portion 521d and the strip-shaped portion 541d are located with their longitudinal directions parallel to each other. In the example shown in FIG. 22, the strip-shaped portion 541d is located on the opposite side of the second semiconductor elements 2 from the side on which the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 are arranged in the y direction (i.e., the y1 direction). Unlike this example, the positional relationship between the strip-shaped portion 521d and the strip-shaped portion 541d may be reversed. In the example shown in FIG. 22, the strip-shaped portions 521d and 541d overlap the conductive plate 32 in a plan view. Unlike this example, the strip-shaped portions 521d and 541d may be located on the opposite side of the conductive plate 32 from the side on which the conductive plate 31 is arranged in the y direction (i.e., the y1 direction).

[0146] As shown in FIG. 22, the strip-shaped portion 531d and the strip-shaped portion 551d are located on the opposite side of the strip-shaped portion 531d from the side where the plurality of second semiconductor elements 2 are arranged relative to the plurality of first semiconductor elements 1 in the y direction (i.e., the y2 direction). The strip-shaped portion 531d and the strip-shaped portion 551d are located with their longitudinal directions parallel to each other. In the example shown in FIG. 22, the strip-shaped portion 551d is located on the opposite side of the strip-shaped portion 531d from the side where the plurality of first semiconductor elements 1 and the plurality of second semiconductor elements 2 are arranged relative to the strip-shaped portion 531d in the y direction (i.e., the y1 direction). Unlike this example, the positional relationship between the strip-shaped portion 531d and the strip-shaped portion 541d may be reversed. In the example shown in FIG. 22, the strip-shaped portions 531d and 551d overlap the conductive plate 31 in a plan view. Unlike this example, the strip-shaped portions 531d and 551d may be located on the opposite side of the conductive plate 31 from the side where the conductive plate 32 is arranged relative to the conductive plate 31 in the y direction (i.e., the y2 direction).

[0147] Each of the plurality of connection members 723 is joined to a corresponding third electrode 13 and the strip-shaped portion 521d. Each of the plurality of connection members 743 is joined to a corresponding fifth electrode 22 and the strip-shaped portion 541d. Therefore, as shown in FIG. 22 , each of the connection members 723, 743 intersects the gap between the conductive plate 31 and the conductive plate 32 and overlaps the conductive plate 32 in a plan view. Note that when each of the strip-shaped portions 521d, 541d is positioned further in the y1 direction than the conductive plate 32, each of the connection members 723, 743 intersects the conductive plate 32 in a plan view.

[0148] Each of the plurality of connection members 733 is joined to a corresponding sixth electrode 23 and the strip-shaped portion 531d. Each of the plurality of connection members 753 is joined to a corresponding fifth electrode 22 and the strip-shaped portion 551d. Therefore, as shown in FIG. 22 , each of the connection members 733, 753 intersects the gap between the conductive plate 31 and the conductive plate 32 and overlaps the conductive plate 31 in a plan view. Note that when each of the strip-shaped portions 531d, 551d is positioned further in the y2 direction than the conductive plate 31, each of the connection members 733, 753 intersects the conductive plate 31 in a plan view.

[0149] In the semiconductor device A5, the wiring portion 521 (strip portion 521d) and the conductive plate 31 are located on opposite sides of the conductive plate 32 in the y direction. In this configuration, when each connection member 723 is connected to each third electrode 13 and the wiring portion 521 (strip portion 521d), each connection member 723 overlaps the conductive plate 32 in a plan view. In addition, in this configuration, the wiring portion 521 (strip portion 521d) is disposed closer to the plurality of second semiconductor elements 2 than to the plurality of first semiconductor elements 1. Therefore, in the semiconductor device A5, each connection member 723 is longer than when the wiring portion 521 (strip portion 521d) is disposed closer to the plurality of first semiconductor elements 1 than to the plurality of second semiconductor elements 2. In other words, in the semiconductor device A5, the distance of the conduction path from each third electrode 13 to the control terminal 61 can be extended, thereby increasing the inductance component in the transmission path of the first drive signal. This makes it possible for the semiconductor device A5 to suppress oscillation of the first drive signal without connecting a resistor (for example, a gate resistor) to each third electrode 13.

[0150] In the semiconductor device A5, the first electrodes 11 of the multiple first semiconductor elements 1 are electrically connected to each other, and the second electrodes 12 are electrically connected to each other. That is, the multiple first semiconductor elements 1 are connected in parallel to each other. In this configuration, as with the semiconductor device A1, there is a risk of parasitic resonance occurring due to the formation of a loop path passing through the first electrode 11 and third electrode 13 of each first semiconductor element 1. However, in the semiconductor device A5, the length of each connecting member 723 is increased, thereby extending the distance of the conductive path between each third electrode 13. Therefore, the semiconductor device A5 can suppress parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel.

[0151] In the semiconductor device A5, the wiring portion 531 (strip portion 531d) and the conductive plate 32 are located on opposite sides of the conductive plate 31 in the y direction. In this configuration, when each connection member 733 is connected to each sixth electrode 23 and the wiring portion 531 (strip portion 531d), each connection member 733 overlaps the conductive plate 31 in a plan view. Also, in this configuration, the wiring portion 531 (strip portion 531d) is disposed closer to the multiple first semiconductor elements 1 than to the multiple second semiconductor elements 2. Therefore, the semiconductor device A5 can increase the inductance component in the transmission path of the second drive signal, similar to the increase in the inductance component in the transmission path of the first drive signal. This allows the semiconductor device A1 to suppress oscillation of the second drive signal without connecting a resistor (e.g., a gate resistor) to each sixth electrode 23.

[0152] In the semiconductor device A5, the fourth electrodes 21 of the multiple second semiconductor elements 2 are electrically connected to each other, and the fifth electrodes 22 are electrically connected to each other. That is, the multiple second semiconductor elements 2 are connected in parallel to each other. In this configuration, as with the semiconductor device A1, there is a risk of parasitic resonance occurring due to the formation of a loop path passing through the fourth electrode 21 and sixth electrode 23 of each second semiconductor element 2. However, in the semiconductor device A5, the length of each connecting member 733 is increased, thereby extending the distance of the conductive path between each sixth electrode 23. Therefore, the semiconductor device A5 can suppress parasitic resonance that occurs when multiple second semiconductor elements 2 are connected in parallel.

[0153] The configuration of the wiring portion and the configuration of the connection member described with reference to FIG. 22 are not limited to the configuration shown in the semiconductor device A5, and may be appropriately applied to each of the semiconductor devices A2 and A4.

[0154] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. For example, the present disclosure includes the embodiments described in the following appendices. Appendix 1A. a plurality of first semiconductor elements each having a first electrode, a second electrode, and a third electrode, and in which the first electrode and the second electrode are turned on and off in response to a first drive signal input to the third electrode; a first control terminal to which the first drive signal is input; a first wiring portion electrically connected to the first control terminal; a second wiring portion spaced apart from the first wiring portion; a plurality of third wiring portions each spaced apart from the first wiring portion and the second wiring portion; a first connection member that electrically connects the first wiring portion and the second wiring portion; a second connection member that electrically connects the second wiring portion and each of the plurality of third wiring portions; a plurality of third connection members that electrically connect each of the plurality of third wiring portions to the third electrodes of each of the plurality of first semiconductor elements; It is equipped with A semiconductor device, wherein first electrodes of the plurality of first semiconductor elements are electrically connected to each other, and second electrodes of the plurality of first semiconductor elements are electrically connected to each other. Appendix 2A. an insulating substrate having a substrate main surface and a substrate back surface spaced apart from each other in a thickness direction; The semiconductor device according to Appendix 1A, wherein the first wiring portion, the second wiring portion, and the plurality of third wiring portions are formed on the main surface of the substrate. Appendix 3A. the plurality of first semiconductor elements are arranged along a first direction perpendicular to the thickness direction, The semiconductor device described in Appendix 2A, wherein the second wiring portion and the plurality of third wiring portions are located in one of the thickness direction and a second direction perpendicular to the first direction relative to the plurality of first semiconductor elements. Appendix 4A. the second wiring portion and the plurality of third wiring portions are arranged along the first direction, The semiconductor device described in Appendix 3A, wherein the plurality of third wiring portions are arranged on one side of the first direction relative to the second wiring portion and are arranged on the other side of the first direction relative to the second wiring portion. Appendix 5A. a first detection terminal for detecting a conduction state of the second electrode of each of the plurality of first semiconductor elements; a fourth wiring portion electrically connected to the first detection terminal; a fifth wiring portion spaced apart from the fourth wiring portion; a plurality of sixth wiring portions each spaced apart from the fourth wiring portion and the fifth wiring portion; a fourth connection member that electrically connects the fourth wiring portion and the fifth wiring portion; a fifth connection member that electrically connects the fifth wiring portion and each of the sixth wiring portions; a plurality of sixth connection members that electrically connect each of the sixth wiring portions to the second electrodes of each of the first semiconductor elements; 4B. The semiconductor device of claim 4A, further comprising: Appendix 6A. the fourth wiring portion, the fifth wiring portion, and the sixth wiring portions are formed on the main surface of the substrate, The semiconductor device according to Appendix 5A, wherein the fifth wiring portion and the plurality of sixth wiring portions are located on the one side in the second direction relative to the plurality of first semiconductor elements. Appendix 7A. the fifth wiring portion and the plurality of sixth wiring portions are arranged along the first direction, The semiconductor device described in Appendix 6A, wherein the plurality of sixth wiring portions include one arranged on one side of the first direction relative to the fifth wiring portion and one arranged on the other side of the first direction relative to the fifth wiring portion. Appendix 8A. The semiconductor device according to Appendix 7A, wherein the second wiring portion and the fifth wiring portion are arranged along the second direction. Appendix 9A. a plurality of second semiconductor elements each having a fourth electrode, a fifth electrode, and a sixth electrode, and in which the fourth electrode and the fifth electrode are turned on and off in response to a second drive signal input to the sixth electrode; a second control terminal to which the second drive signal is input; a seventh wiring portion electrically connected to the second control terminal; an eighth wiring portion spaced apart from the seventh wiring portion; a plurality of ninth wiring portions each spaced apart from the seventh wiring portion and the eighth wiring portion; a seventh connection member that electrically connects the seventh wiring portion and the eighth wiring portion; an eighth connection member that electrically connects the eighth wiring portion and each of the plurality of ninth wiring portions; a plurality of ninth connection members that electrically connect each of the plurality of ninth wiring portions to the sixth electrodes of each of the plurality of second semiconductor elements; It also has A semiconductor device according to any one of Appendix 5A to Appendix 8A, wherein the fourth electrodes of the respective second semiconductor elements are electrically connected to each other, and the fifth electrodes of the respective second semiconductor elements are electrically connected to each other. Appendix 10A. The semiconductor device according to Appendix 9A, wherein the seventh wiring portion, the eighth wiring portion, and the plurality of ninth wiring portions are formed on the main surface of the substrate. Appendix 11A. The plurality of second semiconductor elements are arranged along the first direction, The semiconductor device according to appendix 10A, wherein the eighth wiring portion and the plurality of ninth wiring portions are located on one side in the second direction relative to the plurality of second semiconductor elements. Appendix 12A. the eighth wiring portion and the plurality of ninth wiring portions are arranged along the first direction, The semiconductor device described in Appendix 11A, wherein the plurality of 9th wiring portions include those arranged on one side of the first direction relative to the 8th wiring portion and those arranged on the other side of the first direction relative to the 8th wiring portion. Appendix 13A. a second detection terminal for detecting a conduction state of the fifth electrode of each of the plurality of second semiconductor elements; a tenth wiring portion to which the second detection terminal is electrically connected; an eleventh wiring portion spaced apart from the tenth wiring portion; a plurality of twelfth wiring portions each spaced apart from the tenth wiring portion and the eleventh wiring portion; a tenth connection member that electrically connects the tenth wiring portion and the eleventh wiring portion; an eleventh connection member that electrically connects the eleventh wiring portion and each of the plurality of twelfth wiring portions; a plurality of twelfth connection members that electrically connect each of the plurality of twelfth wiring portions to the fifth electrodes of each of the plurality of second semiconductor elements; 12B. The semiconductor device of claim 12A, further comprising: Appendix 14A. the tenth wiring portion, the eleventh wiring portion, and the plurality of twelfth wiring portions are formed on the main surface of the substrate, The semiconductor device according to appendix 13A, wherein the eleventh wiring portion and the plurality of twelfth wiring portions are located on the one side in the second direction relative to the plurality of second semiconductor elements. Appendix 15A. the eleventh wiring portion and the plurality of twelfth wiring portions are arranged along the first direction, The semiconductor device described in Appendix 14A, wherein the plurality of 12th wiring portions include one arranged on one side of the first direction relative to the 10th wiring portion and one arranged on the other side of the first direction relative to the 10th wiring portion. Appendix 16A. The semiconductor device according to Appendix 15A, wherein the eighth wiring portion and the eleventh wiring portion are arranged along the second direction. Appendix 17A. each of the plurality of first semiconductor elements has a first element main surface facing in the same direction as the substrate main surface and a first element back surface facing in the same direction as the substrate back surface in the thickness direction, and in each of the first semiconductor elements, the first electrode is formed on the first element back surface, and the second electrode and the third electrode are formed on the first element main surface; The semiconductor device according to any one of Appendix 9A to Appendix 16A, wherein each of the plurality of second semiconductor elements has a second element main surface facing in the same direction as the substrate main surface in the thickness direction and a second element back surface facing in the same direction as the substrate back surface, and in each second semiconductor element, the fourth electrode is formed on the second element back surface, and the fifth electrode and the sixth electrode are formed on the second element main surface. Appendix 18A. a first mounting portion on which the plurality of first semiconductor elements are mounted; a second mounting portion on which the plurality of second semiconductor elements are mounted; the first mounting portion and the second mounting portion are each made of a conductive material and are spaced apart from each other; the first electrodes of the plurality of first semiconductor elements are electrically connected to each other via the first mounting portion; The semiconductor device according to Appendix 17A, wherein fourth electrodes of the respective second semiconductor elements are electrically connected to each other via the second mounting portion. Appendix 19A. the first mounting portion and the second mounting portion face the rear surface of the substrate, the insulating substrate includes a plurality of first openings and a plurality of second openings each penetrating from the main surface of the substrate to the rear surface of the substrate in the thickness direction; the plurality of first openings respectively surround the plurality of first semiconductor elements when viewed in the thickness direction; The semiconductor device according to Appendix 18A, wherein the second openings each surround the second semiconductor elements when viewed in the thickness direction. Appendix 20A. a first power terminal portion electrically connected to the first electrode of each of the plurality of first semiconductor elements; a second power terminal portion electrically connected to the fifth electrode of each of the plurality of second semiconductor elements; a third power terminal portion electrically connected to the second electrode of each of the plurality of first semiconductor elements and the fourth electrode of each of the plurality of second semiconductor elements, a DC voltage is input to the first power terminal portion and the second power terminal portion, the DC voltage is converted into an AC voltage by controlling the on / off of each of the plurality of first semiconductor elements and the plurality of second semiconductor elements; The semiconductor device according to any one of Appendix 9A to Appendix 19A, wherein the AC voltage is output from the third power terminal portion. Appendix 1B. a plurality of first semiconductor elements each of which is controlled to be turned on and off in response to a first drive signal; a plurality of second semiconductor elements each of which is controlled to be turned on and off in response to a second drive signal; a first mounting portion having a first mounting surface facing one side in a thickness direction, the first mounting surface on which the plurality of first semiconductor elements are mounted; a second mounting portion having a second mounting surface facing the same direction as the first mounting surface in the thickness direction, the second mounting surface on which the plurality of second semiconductor elements are mounted; a first control terminal to which the first drive signal is input; a second control terminal to which the second drive signal is input; a first wiring section to which the first control terminal is connected and through which the first drive signal is transmitted; a second wiring section to which the second control terminal is connected and through which the second drive signal is transmitted; a plurality of first connection members that connect each of the plurality of first semiconductor elements to the first wiring portion; a plurality of second connection members that connect each of the plurality of second semiconductor elements to the second wiring portion; It is equipped with the first wiring portion and the first mounting portion are located on opposite sides of the second mounting portion in a first direction perpendicular to the thickness direction, The semiconductor device, wherein the plurality of first connection members overlap the second mounting portion when viewed in the thickness direction. Appendix 2B. the second wiring portion and the second mounting portion are located on opposite sides of the first mounting portion in the first direction, The semiconductor device according to Appendix 1B, wherein the plurality of second connection members overlap the first mounting portion when viewed in the thickness direction. [Explanation of symbols]

[0155] A1 to A4: Semiconductor device 1: First semiconductor element 1a: Main surface of element 1b: Back surface of element 11: 1st electrode 12: 2nd electrode 13: Third electrode 19: Conductive bonding material 2: Second semiconductor element 2a: Element main surface 2b: Back surface of element 21: Fourth electrode 22: 5th electrode 23: 6th electrode 29: Conductive bonding material 3: Support member 31,32: Conductive plate 31a,32a: Mounting surface 319, 329: Bonding material 33, 34: Insulating plate 41: Insulating substrate 411: Main surface 412: Back surface 413: Through hole 414: Through hole 415: Opening 416: Opening 501: First power terminal part 502: Second power terminal section 503: Third power terminal section 504: 4th power terminal section 511~514: Wiring section 511a, 514a: Opening 511b, 513a, 514b: Through hole 519a, 519b, 519c: connecting members 521,522,523:Wiring section 521a, 521b: Pad section 521c: Connecting part 521d: Belt-shaped part 531,532,533:Wiring section 531a, 531b: Pad section 531c: Connecting part 531d: Belt-shaped part 541,542,543:Wiring section 541a, 541b: Pad section 541c: Connecting part 541d: Belt-shaped part 551,552,553:Wiring section 551a, 551b: Pad section 551c: Connecting part 551d: Belt-shaped part 561: Wiring part 561a: Through hole 571 to 573: Wiring section 58: Metal member 59: Metal member 601: First power terminal 602: 2nd power terminal 603: 3rd power terminal 604: Fourth power terminal 61, 62: Control terminals 63, 64, 65: Detection terminal 7: Connection member 711, 712: Connection members 721 to 723: Connection members 731 to 733: Connection members 741 to 743: Connection members 751-753: Connection parts 761-764: Connection parts 771-774: Connection parts 781: Connection parts 8: Sealing member 81: Resin main surface 82: Resin back surface 831~834: Resin side surface 9: Case 91: Heat sink 92: Top plate 93: Frame 931,932: Side wall 941~944: Terminal block

Claims

1. a plurality of first semiconductor elements each of which is controlled to be turned on and off in response to a first drive signal; a plurality of second semiconductor elements each of which is controlled to be turned on and off in response to a second drive signal; a first mounting portion having a first mounting surface facing one side in a thickness direction, the first mounting surface having the plurality of first semiconductor elements mounted thereon; a second mounting portion having a second mounting surface facing the same direction as the first mounting surface in the thickness direction, the second mounting surface on which the plurality of second semiconductor elements are mounted; a first control terminal to which the first drive signal is input; a second control terminal to which the second drive signal is input; a first wiring portion to which the first control terminal is connected and through which the first drive signal is transmitted; a second wiring portion to which the second control terminal is connected and through which the second drive signal is transmitted; a plurality of first connection members that connect each of the plurality of first semiconductor elements to the first wiring portion; a plurality of second connection members that connect each of the plurality of second semiconductor elements to the second wiring portion; It is equipped with the first wiring portion and the first mounting portion are located on opposite sides of the second mounting portion in a first direction perpendicular to the thickness direction, The semiconductor device, wherein the plurality of first connection members overlap the second mounting portion when viewed in the thickness direction.

2. each of the plurality of first semiconductor elements has a first electrode, a second electrode, and a third electrode, and the first electrode and the second electrode are on / off controlled in response to the first drive signal input to the third electrode; The semiconductor device according to claim 1 , wherein the plurality of first connection members are individually connected to the third electrodes of the plurality of first semiconductor elements.

3. a first detection terminal that outputs a first detection signal that indicates a conduction state of each of the plurality of first semiconductor elements; a third wiring portion to which the first detection terminal is connected and through which the first detection signal is transmitted; a plurality of third connection members that connect the second electrodes of the plurality of first semiconductor elements to the third wiring portion; The semiconductor device according to claim 2 , further comprising:

4. the third wiring portion is located on the same side as the first wiring portion with respect to the second mounting portion in the first direction; The semiconductor device according to claim 3 , wherein the plurality of third connection members overlap the second mounting portion when viewed in the thickness direction.

5. the first wiring portion includes a first pad portion to which the first control terminal is joined and a first strip portion to which the plurality of first connection members are joined; The semiconductor device according to claim 4 , wherein the first strip portion extends along a second direction perpendicular to the thickness direction and the first direction when viewed in the thickness direction.

6. the third wiring portion includes a second pad portion to which the first detection terminal is joined and a second strip portion to which the plurality of second connection members are joined; The semiconductor device according to claim 5 , wherein the second strip portion extends along the second direction when viewed in the thickness direction.

7. The semiconductor device according to claim 6 , wherein the first strip portion and the second strip portion are parallel to each other when viewed in the thickness direction.

8. The semiconductor device according to claim 1 , wherein the first wiring portion is located closer to the second semiconductor elements than to the first semiconductor elements.

9. The semiconductor device according to claim 1 , wherein the first electrodes of the plurality of first semiconductor elements are electrically connected to each other and the second electrodes of the plurality of first semiconductor elements are electrically connected to each other.

10. the second wiring portion and the second mounting portion are located on opposite sides of the first mounting portion in the first direction, 10. The semiconductor device according to claim 1, wherein the plurality of second connection members overlap the first mounting portion when viewed in the thickness direction.

11. each of the plurality of second semiconductor elements has a fourth electrode, a fifth electrode, and a sixth electrode, and the fourth electrode and the fifth electrode are on / off controlled in response to the second drive signal input to the sixth electrode; The semiconductor device according to claim 10 , wherein the plurality of second connection members are individually connected to the sixth electrodes of the plurality of second semiconductor elements.

12. a second detection terminal that outputs a second detection signal that indicates a conduction state of each of the plurality of second semiconductor elements; a fourth wiring portion to which the second detection signal is connected and through which the second detection signal is transmitted; a plurality of fourth connection members that connect the fifth electrodes of the plurality of second semiconductor elements to the fourth wiring portion; The semiconductor device according to claim 11 , further comprising:

13. the fourth wiring portion is located on the same side as the second wiring portion with respect to the first mounting portion in the first direction; The semiconductor device according to claim 12 , wherein the plurality of fourth connection members overlap the first mounting portion when viewed in the thickness direction.

14. the second wiring portion includes a third pad portion to which the second control terminal is joined and a third strip portion to which the plurality of second connection members are joined; The semiconductor device according to claim 13 , wherein the third strip portion extends along a second direction perpendicular to the thickness direction and the first direction when viewed in the thickness direction.

15. the fourth wiring portion includes a fourth pad portion to which the second detection terminal is joined and a fourth strip portion to which the plurality of fourth connection members are joined, The semiconductor device according to claim 14 , wherein the fourth strip portion extends along the second direction when viewed in the thickness direction.

16. The semiconductor device according to claim 15 , wherein the third strip portion and the fourth strip portion are parallel to each other when viewed in the thickness direction.

17. The semiconductor device according to claim 10 , wherein the second wiring portion is located closer to the plurality of first semiconductor elements than to the plurality of second semiconductor elements.

18. The semiconductor device according to claim 10 , wherein the fourth electrodes of the second semiconductor elements are electrically connected to each other and the fifth electrodes of the second semiconductor elements are electrically connected to each other.

19. 2. The semiconductor device according to claim 1, wherein each of said plurality of first semiconductor elements and each of said plurality of second semiconductor elements are electrically connected in series.

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