Drawing apparatus

Abstract

To realize drawing of a high-definition pattern while making a beam width smaller.SOLUTION: A drawing apparatus comprises: an optical system 42 which leads light from a light source part 41 onto the surface of a subject along an optical axis J1; a spatial light modulator 46 which is arranged at a first position conjugate with the surface of the subject, and has a plurality of light modulation elements irradiated with light from the light source part 41; a phase shift mask 51 which is arranged at a second position conjugate with the surface of the subject; and a moving mechanism which relatively moves irradiation positions of light beams of the plurality of light modulation elements on the surface of the subject to the surface. The phase shift mask 51 is a member which generates a phase difference between light made incident to the central part in a prescribed direction perpendicular to the optical axis J1 and light made incident to both outer sides of the central part, and restricts the width of a peak of the light beam corresponding to the central part in intensity distribution of the prescribed direction, which is modulated by each light modulation element and irradiated on the surface of the subject, in an irradiation range of light corresponding to each light modulation element.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to a drawing device. [Background technology]

[0002] Conventionally, a drawing apparatus (also called a direct drawing apparatus or a direct drawing exposure apparatus) has been used that draws a pattern by irradiating a substrate with a converging light beam. For example, Patent Document 1 discloses a method for controlling the convergence position of a light beam to follow the substrate surface when drawing on a substrate having protruding regions and receding regions that are receded from the protruding regions arranged on its surface. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-67501 A Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, there has been a demand for even finer patterns to be drawn in lithography systems. To achieve higher pattern resolution, it is necessary to increase the resolution, and narrowing the beam width at the exposure surface (the substrate surface in the above case) is effective. However, it is known that there is a trade-off between resolution and depth of focus (see Equations 1 and 2 below). Increasing the NA and narrowing the beam width to increase the resolution results in a smaller depth of focus. When drawing a pattern, it is necessary to keep the error (fluctuation range) in the distance between the objective lens and the exposure surface within the range of the depth of focus. However, if the range of the depth of focus is smaller than the control error of the focus mechanism that moves the objective lens, exposure defects are likely to occur. Therefore, a new method capable of narrowing the beam width even with a low NA is needed.

[0005] The present invention has been made in view of the above-mentioned problems, and has as its object to realize highly precise pattern writing by reducing the beam width. [Means for solving the problem]

[0006] A first aspect of the present invention is an imaging device comprising: a light source unit; an optical system that directs light from the light source unit onto the surface of an object along an optical axis; a spatial light modulator that is arranged in a first position within the optical system that is conjugate to the surface of the object and has a plurality of light modulation elements onto which the light from the light source unit is irradiated; a phase shift mask that is arranged in a second position within the optical system that is conjugate to the surface of the object and is a member that generates a phase difference between light that enters a central portion in a predetermined direction perpendicular to the optical axis and light that enters both outside of the central portion in a light irradiation area corresponding to each light modulation element, and that limits the width of the peak corresponding to the central portion in the intensity distribution in the predetermined direction of the light beam modulated by each light modulation element and irradiated onto the surface; and a moving mechanism that moves the irradiation position of the light beam of the plurality of light modulation elements on the surface of the object relative to the surface.

[0007] A second aspect of the present invention is a drawing device according to the first aspect, further comprising a shading mask that is arranged at a third position within the optical system that is conjugate to the surface of the object, and that has a shading portion that blocks light incident on each outer edge portion in the specified direction in the light irradiation area corresponding to each light modulation element, and that reduces side lobes in the intensity distribution of the light beam.

[0008] A third aspect of the present invention is the drawing apparatus of the second aspect, wherein the light-shielding mask is disposed between the phase shift mask and the object in the optical system.

[0009] A fourth aspect of the present invention is the drawing device of the second aspect (which may be either the second or third aspect), wherein the light-shielding mask is a light-transmitting member having the light-shielding portion provided at each of the outer edge portions in the predetermined direction, and the light-transmitting member further has a semi-transmitting portion having a higher transmittance than the light-shielding portion between the center between the outer edge portions and each of the outer edge portions.

[0010] A fifth aspect of the present invention is a drawing device according to the first aspect, wherein the phase shift mask has a light-shielding portion that reduces side lobes in the intensity distribution of the light beam by blocking light incident on each outer edge in the specified direction in the light irradiation area corresponding to each light modulation element.

[0011] A sixth aspect of the present invention is a drawing device according to any one of the first to fifth aspects, further comprising a phase shift mask moving mechanism that moves the phase shift mask in a direction along the optical axis and / or in a direction perpendicular to the optical axis.

[0012] A seventh aspect of the present invention is the drawing device of any one of the second to fourth aspects, further comprising a light-shielding mask moving mechanism that moves the light-shielding mask in a direction along the optical axis and / or in a direction perpendicular to the optical axis. [Effects of the Invention]

[0013] According to the present invention, it is possible to realize highly precise pattern writing by reducing the beam width. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 2 is a front view showing the imaging device. [Figure 2] FIG. 2 is an enlarged view of a spatial light modulator. [Figure 3] FIG. 2 is a diagram showing a configuration of a part of a light irradiation unit. [Figure 4] FIG. 1 is a diagram showing the optical path of a low NA objective lens. [Figure 5] FIG. 1 is a diagram showing the optical path of a high NA objective lens. [Figure 6] FIG. 1 is a diagram showing an example of a phase shift mask. [Figure 7] FIG. 2 is a diagram showing the intensity distribution of a light beam on an exposure surface. [Figure 8] FIG. 2 is a diagram showing the intensity distribution of a light beam on an exposure surface. [Figure 9]FIG. 2 is a diagram showing the configuration of a light irradiation unit. [Figure 10] FIG. 1 is a diagram showing a phase shift mask. [Figure 11] FIG. 10 is a diagram showing a light-shielding mask. [Figure 12] FIG. 2 is a diagram showing the intensity distribution of a light beam on an exposure surface. [Figure 13] FIG. 2 is a diagram showing the intensity distribution of a light beam on an exposure surface. [Figure 14] FIG. 10 is a diagram showing another example of a phase shift mask. [Figure 15] FIG. 10 is a diagram showing another example of a light-shielding mask. [Figure 16] FIG. 10 is a diagram showing another example of the light irradiation unit. DETAILED DESCRIPTION OF THE INVENTION

[0015] FIG. 1 is a front view showing a drawing device 1 according to an embodiment of the present invention. In FIG. 1, three mutually orthogonal directions are indicated by arrows as the X direction, the Y direction, and the Z direction (the same applies to FIG. 3 described later). In the example of FIG. 1, the X direction and the Y direction are horizontal directions, and the Z direction is vertical. In the following description, the Z direction will be referred to as the "up-down direction." The X direction, the Y direction, and the Z direction may be changed arbitrarily, and do not have to be horizontal or vertical.

[0016] The imaging device 1 is a device that irradiates light onto the surface of an object to draw a pattern. The object in this embodiment is a substrate 9 such as a semiconductor substrate, a printed circuit board, or a glass substrate, and a layer of a photosensitive material such as a resist is formed on an upper surface 91 of the substrate 9.

[0017] The imaging apparatus 1 is divided into an interior of the body, which is inside the body frame 101, and an exterior of the body, which is outside the body frame 101. The interior of the body is divided into a processing area 102 and a delivery area 103. The processing area 102 contains a stage 2, a stage moving mechanism 20, an optical unit 40, and an alignment unit 6. The delivery area 103 contains a transport device 7. The imaging apparatus 1 is provided with a control unit 10 and a cassette placement unit 104 outside the body. The control unit 10 includes, for example, a general computer in which a CPU, a ROM, a RAM, a storage device, etc. are interconnected via a bus line. The control unit 10 is electrically connected to the other components of the imaging apparatus 1. The control unit 10 is responsible for overall control of the imaging apparatus 1.

[0018] The cassette placement part 104 is provided at a position adjacent to the delivery area 103. A cassette C is placed on the cassette placement part 104. The transfer device 7 arranged in the delivery area 103 has a transfer robot or the like that transfers substrates 9 into and out of the processing area 102. The transfer device 7 takes out unprocessed substrates 9 stored in cassette C on the cassette placement part 104 and carries them onto stage 2 in the processing area 102, and removes processed substrates 9 from stage 2 and stores them in cassette C. The transfer of cassettes C to and from the cassette placement part 104 is performed by an external transfer device.

[0019] The stage 2 has a flat upper surface and holds the substrate 9 placed on it by the transport device 7 in a horizontal position. The stage 2 is a holder that holds the substrate 9. In one example, the substrate 9 is held on the upper surface of the stage 2 by suction. The stage movement mechanism 20 includes a support plate 22, a sub-scanning mechanism 23, a base plate 24, and a main scanning mechanism 25. The support plate 22 has a rotary motor and the like, and supports the stage 2 rotatably about an axis parallel to the vertical direction. The sub-scanning mechanism 23 has a linear motor, guide rails, and the like, and moves the support plate 22 in the X direction, which is the sub-scanning direction. The base plate 24 supports the sub-scanning mechanism 23. The main scanning mechanism 25 has a linear motor, guide rails, and the like, and moves the base plate 24 in the Y direction, which is the main scanning direction.

[0020] The alignment unit 6 includes an alignment camera 61. The alignment camera 61 has an area image sensor (two-dimensional image sensor) such as a CCD, and captures an image of an alignment mark formed on the upper surface 91 of the substrate 9. The captured image obtained by the alignment camera 61 is output to the control unit 10. The control unit 10 performs alignment processing to determine the relative positions of the optical unit 40 and the substrate 9 based on the captured image.

[0021] The optical unit 40 includes a plurality of light irradiation units 4. The plurality of light irradiation units 4 are arranged in the X direction. In this embodiment, the optical unit 40 includes two light irradiation units 4. The optical unit 40 may include three or more light irradiation units 4. The following description focuses on one light irradiation unit 4, but the other light irradiation units 4 have the same configuration.

[0022] Each light irradiation unit 4 includes a light source unit 41, an optical system 42, a spatial light modulator 46, a phase shift mask 51, and a light-shielding mask 52. The light source unit 41 includes a laser driver and a laser oscillator, and driving the laser driver causes the laser oscillator to emit laser light. The optical system 42 guides the laser light from the light source unit 41 along an optical axis J1 (see FIG. 3 described below) to the upper surface 91 of the substrate 9. The optical system 42 includes an illumination optical system 43 and a projection optical system 44. The illumination optical system 43 includes multiple lenses and guides the laser light emitted from the light source unit 41 to the spatial light modulator 46. The phase shift mask 51 and the light-shielding mask 52 are disposed on the optical axis J1 of the illumination optical system 43. Details of the illumination optical system 43, the phase shift mask 51, and the light-shielding mask 52 will be described later.

[0023] FIG. 2 is an enlarged view of a portion of the spatial light modulator 46. The spatial light modulator 46 is a diffraction grating-type reflective modulator and includes a plurality of light modulation elements 461 arranged in a row. In FIG. 2, one light modulation element 461 is indicated by a thick rectangle. Each of the plurality of light modulation elements 461 includes a pair of ribbons 462, 463. That is, each light modulation element 461 is one ribbon pair. Two or more ribbon pairs may form one light modulation element 461. Each light modulation element 461 can be switched between an OFF state in which first-order or higher diffracted light is emitted and an ON state in which zeroth-order diffracted light (zeroth-order light) is emitted by changing the height between the ribbons 462, 463 (height in the direction perpendicular to the paper surface). The diffraction grating-type light modulator used in this embodiment is, for example, a GLV (Grating Light Valve) (registered trademark). As will be described later, the spatial light modulator 46 is not limited to a GLV.

[0024] FIG. 3 is a diagram showing a partial configuration of the light irradiation unit 4. The light irradiation unit 4 has a support 401 extending in the vertical direction, and a portion protruding toward the (+Y) side is provided at the upper end of the support 401. The spatial light modulator 46 is attached to the lower surface of this portion via a movable stage 460. The reflective surfaces of the multiple light modulation elements 461 of the spatial light modulator 46 (i.e., the surfaces of the ribbons 462 and 463) face approximately downward. The support 401 is provided with a through-hole 402 extending in the Y direction, and the optical axis J1 of the optical system 42 passes through the through-hole 402. Laser light from the light source unit 41 passes through the through-hole 402, is reflected by a mirror 436, and is irradiated onto the surface of the spatial light modulator 46, i.e., the reflective surfaces of the multiple light modulation elements 461. As described above, the plurality of light modulation elements 461 are arranged in one direction (the X direction in FIG. 3), and light (hereinafter also referred to as "linear light") whose cross section perpendicular to the optical axis J1 is long in the X direction is irradiated onto the plurality of light modulation elements 461. Light reflected as zeroth-order diffracted light by the light modulation elements 461 in the ON state enters the projection optical system 44 arranged below the spatial light modulator 46. Light reflected as first-order or higher diffracted light by the light modulation elements 461 in the OFF state does not enter the projection optical system 44.

[0025] The optical axis J1 in the projection optical system 44, i.e., the optical axis J1 between the spatial light modulator 46 and the upper surface 91 of the substrate 9, is approximately parallel to the vertical direction. The light beams (zeroth-order diffracted light) emitted from each light modulation element 461 and incident on the projection optical system 44 reach the focus lens 441 via multiple lenses. The focus lens 441 is the optical element (objective lens) arranged closest to the substrate 9 in the projection optical system 44. The light beams from each light modulation element 461 are converged by the focus lens 441 and directed to the upper surface 91 of the substrate 9 at a predetermined magnification.

[0026] A distance measurement unit 49 is attached to the lower part of the housing of the light irradiation unit 4. The distance measurement unit 49 includes an irradiation unit 491 and a light receiving unit 492. The irradiation unit 491 irradiates detection light, which is laser light, obliquely onto the upper surface 91 of the substrate 9. The light receiving unit 492 receives the detection light reflected by the upper surface 91. This allows the distance measurement unit 49 to measure the distance between the light irradiation unit 4 and the upper surface 91 of the substrate 9. In practice, the focus lens 441 can be moved up and down by a focus mechanism 442. By raising and lowering the focus lens 441 based on the measurement result by the distance measurement unit 49, the convergence position of the light beam emitted from the focus lens 441 is approximately positioned on the upper surface 91 of the substrate 9.

[0027] When drawing a pattern in the drawing apparatus 1 of FIG. 1, the main scanning mechanism 25 continuously moves the substrate 9 in the main scanning direction. As a result, the irradiation positions of the light beams from the multiple light modulation elements 461 in each light irradiation unit 4 move relatively in the main scanning direction on the upper surface 91 of the substrate 9. Furthermore, the control unit 10 controls the spatial light modulators 46 of the light irradiation units 4 in synchronization with the movement of the irradiation positions on the upper surface 91. As a result, a pattern is drawn by each light irradiation unit 4 in a strip-shaped region extending in the main scanning direction on the upper surface 91. Next, the sub-scanning mechanism 23 moves the substrate 9 a predetermined distance in the sub-scanning direction. Thereafter, the spatial light modulators 46 of the light irradiation units 4 are controlled while the substrate 9 continues to move in the main scanning direction. In this manner, the continuous movement of the substrate 9 in the main scanning direction and the intermittent movement in the sub-scanning direction are repeated, thereby drawing a pattern on approximately the entire upper surface 91.

[0028] Here, the relationship between the resolution and depth of focus in the imaging device 1 and the numerical aperture (hereinafter simply referred to as "NA") of the objective lens will be explained using a simple model. Fig. 4 is a diagram showing the optical path when the NA of the objective lens 80 is relatively low, and Fig. 5 is a diagram showing the optical path when the NA of the objective lens 80 is relatively high. In Figs. 4 and 5, the in-focus position and both ends of the depth of focus are indicated by dashed lines perpendicular to the optical axis J2, and the cross section of the light beam at each position is shown to the left of the dashed lines. In the above model, the resolution R is calculated by Equation 1, and the depth of focus DOF ​​is calculated by Equation 2.

[0029] (Number 1) R=k1·λ / NA

[0030] (Number 2) DOF=±λ / 2NA 2

[0031] In Equations 1 and 2, λ is the wavelength of the light beam, and k1 is a constant. NA is expressed as n·sinθ, where n is the refractive index of the medium between the objective lens 80 and the exposure surface, and θ is the maximum angle of the light beam emitted from the objective lens 80 with respect to the optical axis J2.

[0032] To write a highly precise pattern, it is necessary to increase the resolution. However, as is clear from Equations 1 and 2, increasing the NA to increase the resolution (i.e., reducing the beam width) results in a decrease in the depth of focus. When writing a pattern, the error (fluctuation range) in the distance between the objective lens 80 and the exposure surface is limited within the range of the depth of focus (λ / NA 2 ), but if the range of the depth of focus is less than the control error of the mechanism that moves the objective lens 80 (focus mechanism 442 in the example of FIG. 3), exposure defects are likely to occur. Therefore, even if the NA is low, it is necessary to reduce the beam width.

[0033] On the other hand, in the drawing apparatus 1, a pattern is drawn while the stage 2 is continuously moved in the main scanning direction. Therefore, the drag of the light beam accumulates the energy distribution on the exposure surface, and unlike the sub-scanning direction, the minimum line width of the pattern in the main scanning direction becomes wider than the beam width. To reduce the minimum line width of the pattern in the main scanning direction, it is necessary to reduce the beam width in the main scanning direction. Therefore, the drawing apparatus 1 employs a method of using a phase shift mask 51 to reduce the beam width in the main scanning direction even with a low NA (i.e., without increasing the NA).

[0034] Next, a phase shift mask will be described. FIG. 6 is a diagram showing an example of a phase shift mask 81. The phase shift mask 81 has a phase shift film 811 formed on part of the surface of a plate-shaped light-transmitting member 819. In FIG. 6, the area of ​​the phase shift film 811 is cross-hatched (similarly to FIG. 10 described later). The light-transmitting member 819 is made of, for example, glass. The phase shift film 811 is made of, for example, a compound containing silicon. In the example of FIG. 6, phase shift films 811 are provided at both ends in the left-right direction, and the area between the two phase shift films 811 is an uncoated area 812. A phase difference of 180 degrees occurs between light passing through the uncoated area 812 where the phase shift film 811 is not present and light passing through the area where the phase shift film 811 is present.

[0035] Here, we will describe optical simulations of a model of an optical system having an objective lens 80 (the model in FIG. 4) without and with a phase shift mask 81. When a phase shift mask 81 is used, the phase shift mask 81 is placed at a position conjugate with the exposure surface within the optical system. The phase shift mask 81 is held perpendicular to the optical axis J2, which is located at the center of the uncoated region 812. The width of the uncoated region 812 in the phase shift mask 81 (the width in the horizontal direction in FIG. 6) is 20 μm, and the width of each phase shift film 811 region is also 20 μm. The transmittance of the phase shift film 811 region and the uncoated region 812 is 100%. The magnification of the objective lens 80 is 1 / 40x, and the NA is 0.45.

[0036] 7 and 8 are diagrams showing the results of the simulation, illustrating the intensity distribution of the light beam at the exposure surface (here, the focal position). In Fig. 7 and Fig. 8, the vertical axis represents relative intensity (relative intensity with the maximum intensity of the central peak, described below, set to 1), and the horizontal axis represents the position in the width direction, which corresponds to the left-right direction in Fig. 6. On the horizontal axis, the position of the optical axis J2 in the width direction is the origin (0).

[0037] When the phase shift mask 81 is not used, the intensity distribution of the light beam on the exposure surface is a Gaussian distribution as shown in FIG. 2 The beam width at the position where (indicated by arrow A1 in FIG. 7) is 0.76 μm. Hereinafter, when referring to the intensity distribution of the light beam, 1 / e of the maximum intensity (if multiple peaks exist, the maximum intensity of the central peak) is used. 2 The beam width at the position where

[0038] In contrast, when a phase shift mask 81 is used, as shown in FIG. 8, the intensity distribution of the light beam on the exposure surface has a beam width (indicated by arrow A2 in FIG. 8) of 0.46 μm for the central peak P1 on the optical axis J2. Thus, by using the phase shift mask 81, it is possible to limit the width of the central peak P1 in the intensity distribution (i.e., to reduce the beam width). Meanwhile, a side lobe P2 occurs in the intensity distribution of FIG. 8. In the example of FIG. 8, the maximum intensity of the side lobe P2 is 55% of the maximum intensity of the central peak P1. Since the side lobe P2 may affect the shape of the pattern to be written (causing exposure defects), it is preferable to reduce it. Therefore, the writing apparatus 1 further includes a light-shielding mask 52 to reduce the side lobe P2.

[0039] Fig. 9 is a diagram showing the configuration of the light irradiation unit 4. As described above, the light irradiation unit 4 includes a light source unit 41, an optical system 42, a spatial light modulator 46, a phase shift mask 51, and a light-shielding mask 52. As described with reference to Fig. 3, in the actual optical system 42, the optical axis is bent at the surfaces of the mirror 436 and the spatial light modulator 46, but in Fig. 9, for convenience of illustration, the optical axis J1 is shown as being linear.

[0040] 9, a focus lens 431, a phase shift mask 51, a relay lens 432, a light-shielding mask 52, a relay lens 433, a spatial light modulator 46, and a projection optical system 44 are arranged in this order from a light source unit 41 toward an upper surface 91 of a substrate 9, which is an exposure surface. The focus lens 431 and the relay lenses 432 and 433 are included in an illumination optical system 43. The relay lenses 432 and 433 cause the reflecting surfaces of the phase shift mask 51, the light-shielding mask 52, and the spatial light modulator 46 to have a mutually conjugate positional relationship (i.e., they are in an imaging relationship with each other).

[0041] The focus lens 431 can be moved along the optical axis J1 by a focus mechanism (not shown). As a result, linear light incident on the illumination optical system 43 from the light source unit 41 is focused on the reflecting surface of the spatial light modulator 46. On the reflecting surface, an irradiation area is formed that extends in the arrangement direction of the plurality of light modulation elements 461 (hereinafter simply referred to as the "arrangement direction") and has a narrow width in the direction perpendicular to the arrangement direction. The upper surface 91 of the substrate 9 is conjugate with the reflecting surface of the spatial light modulator 46. Assuming that all the light modulation elements 461 are in the ON state, an irradiation area is also formed on the upper surface 91 of the substrate 9 that extends in a direction corresponding to the arrangement direction (hereinafter simply referred to as the "arrangement direction"; the same applies to other positions conjugate to the reflecting surface of the spatial light modulator 46). On the upper surface 91, the arrangement direction is the direction along the sub-scanning direction (X direction), and the direction perpendicular to the arrangement direction is the direction along the main scanning direction (Y direction).

[0042] As described above, in light irradiation unit 4, spatial light modulator 46 is arranged at a first position conjugate to upper surface 91 of substrate 9 within optical system 42, and phase shift mask 51 is arranged at a second position conjugate to upper surface 91 of substrate 9 and different from the first position. Also, light-shielding mask 52 is arranged at a third position conjugate to upper surface 91 of substrate 9 and different from the first and second positions. In the example of FIG. 9 , phase shift mask 51, light-shielding mask 52, and spatial light modulator 46 are arranged in this order from light source unit 41 toward upper surface 91.

[0043] The light irradiation unit 4 further includes a phase shift mask moving mechanism 56 and a light-shielding mask moving mechanism 57. The phase shift mask moving mechanism 56 has, for example, a motor and guide rails, and is capable of moving the phase shift mask 51 in a direction along the optical axis J1 and in two directions perpendicular to the optical axis J1 and orthogonal to each other. In the example of FIG. 1, the direction along the optical axis J1 is the Y direction, and the two directions perpendicular to the optical axis J1 and orthogonal to each other are the X direction and the Z direction (the same applies to the light-shielding mask moving mechanism 57). The light-shielding mask moving mechanism 57 has, for example, a motor and guide rails, and is capable of moving the light-shielding mask 52 in a direction along the optical axis J1 and in two directions perpendicular to the optical axis J1 and orthogonal to each other.

[0044] If the optical axis of the light source unit 41 is misaligned due to aging, temperature, or the like, the position of the focus lens 431 is adjusted by a movement mechanism (not shown), and the position of the spatial light modulator 46 is also adjusted by the movable stage 460. Furthermore, the position of the phase shift mask 51 is finely adjusted by the phase shift mask movement mechanism 56, and the position of the light-shielding mask 52 is finely adjusted by the light-shielding mask movement mechanism 57. This makes it possible to maintain a constant light beam irradiated onto the upper surface 91 of the substrate 9. Depending on the design of the drawing apparatus 1, the phase shift mask movement mechanism 56 may be capable of moving the phase shift mask 51 only in a direction along the optical axis J1 or a direction perpendicular to the optical axis J1. Furthermore, the light-shielding mask movement mechanism 57 may be capable of moving the light-shielding mask 52 only in a direction along the optical axis J1 or a direction perpendicular to the optical axis J1.

[0045] FIG. 10 is a diagram illustrating a phase shift mask 51. As described with reference to FIG. 6, the phase shift mask 51 is plate-shaped and disposed perpendicular to the optical axis J1. As described above, the light irradiation unit 4 irradiates the reflective surface of the spatial light modulator 46 with linear light extending in the array direction, and the phase shift mask 51 also has a shape extending in the array direction (the horizontal direction in FIG. 10) in accordance with the linear light. The phase shift mask 51 has a phase shift film 511 formed on a portion of the surface of a light-transmitting member 519. In the example of FIG. 10, the phase shift films 511 are provided at both ends in the vertical direction in the figure, and the region between the two phase shift films 511 is an uncoated region 512. In the phase shift mask 51, a phase difference of 180 degrees occurs between light passing through the uncoated region 512 where the phase shift film 511 is not present and light passing through the region where the phase shift film 511 is present.

[0046] On the surface of the phase shift mask 51, if a direction perpendicular to the optical axis J1 and the arrangement direction is referred to as the "direction of interest," then in the example of FIG. 10 , the vertical direction in the figure is the direction of interest. In the phase shift mask 51, two phase shift films 511 are arranged on both sides of the uncoated region 512 with respect to the direction of interest, and the optical axis J1 is arranged at the center of the uncoated region 512. The area of ​​the phase shift mask 51 irradiated with linear light from the light source unit 41 extends in the arrangement direction and overlaps the two phase shift films 511 and the uncoated region 512. Typically, the intensity distribution of the linear light in the direction of interest is a Gaussian distribution. In the area of ​​the phase shift mask 51 irradiated with linear light, light beams passing through multiple portions aligned in the arrangement direction are incident on the multiple light modulation elements 461 of the spatial light modulator 46. That is, each of the multiple portions is an irradiation area of ​​light corresponding to one of the light modulation elements 461.

[0047] Thus, in the phase shift mask 51, in the light irradiation region corresponding to each light modulation element 461, an uncoated region 512 is provided in the center in the direction of interest, and regions of the phase shift film 511 are provided on both sides of the center. A phase difference occurs between the light incident on the center and the light incident on both sides of the center. As a result, as described with reference to FIG. 8 , in the linear light imaged on the reflecting surface of the spatial light modulator 46, the width of the peak corresponding to the center (i.e., the width of the peak mainly formed by the light beam that has passed through the center) is limited in the intensity distribution in the direction of interest. As a result, the width of the peak corresponding to the center is also limited in the intensity distribution in the direction of interest for the light beam modulated by each light modulation element 461 and irradiated onto the upper surface 91 of the substrate 9, thereby realizing a narrow beam width. Hereinafter, the direction corresponding to the direction of interest at each position conjugate to the position of the phase shift mask 51 will be simply referred to as the “direction of interest.” In the imaging apparatus 1 of FIG. 1, the direction of interest on the upper surface 91 of the substrate 9 is the main scanning direction.

[0048] The phase difference caused by phase shift mask 51 is not limited to 180 degrees, and may be, for example, 165 to 195 degrees or 170 to 190 degrees, as long as the width of the peak corresponding to the central portion is appropriately limited. Furthermore, when a phase difference occurs among light-shielding portion 521, semi-transmitting portion 522, and transmitting portion 523 described below in light-shielding mask 52, the phase difference occurring between the region of phase shift film 511 and uncovered region 512 may be determined taking these phase differences into consideration.

[0049] FIG. 11 is a diagram illustrating a light-shielding mask 52. Similar to the phase-shift mask 51, the light-shielding mask 52 is plate-shaped and disposed perpendicular to the optical axis J1. The light-shielding mask 52 extends in the arrangement direction (the left-right direction in FIG. 11 ) to match the linear light. The light-shielding mask 52 includes two light-shielding portions 521, two semi-transparent portions 522, and a transparent portion 523. In one example of the light-shielding mask 52, a light-shielding film is formed on a portion of the surface of a plate-shaped light-transmitting member 529, and a semi-transparent film is formed on the other portion. In the light-transmitting member 529, the portions of the light-shielding film are the light-shielding portions 521, the portions of the semi-transparent film are the semi-transparent portions 522, and the portions without either film are the transparent portions 523. The light-shielding film and the semi-transparent film are, for example, thin metal films such as chromium (Cr).

[0050] 11, a light-shielding portion 521 is provided on each outer edge in the vertical direction in the figure, and a semi-transparent portion 522 is provided near the inside of each outer edge. The area (center) between two semi-transparent portions 522 is a transparent portion 523. The transmittance of the light from the light source 41 in the light-shielding portion 521 is approximately 0%, and the transmittance in the transparent portion 523 is, for example, 80 to 100%. The transmittance in the semi-transparent portion 522 is higher than the transmittance in the light-shielding portion 521 and lower than the transmittance in the transparent portion 523. The transmittance in the semi-transparent portion 522 is, for example, 25 to 75%. The light-shielding mask 52 can also be considered as a partially acting density filter (ND filter).

[0051] In the example of FIG. 11 , the vertical direction in the drawing is the direction of interest. In the light-shielding mask 52, two semi-transparent portions 522 are arranged on both sides of a transparent portion 523 with respect to the direction of interest, and two light-shielding portions 521 are arranged outside the two semi-transparent portions 522. The optical axis J1 is located at the center of the transparent portion 523. The irradiation area of ​​the light-shielding mask 52 with linear light from the light source unit 41 extends in the arrangement direction and overlaps with the two light-shielding portions 521, the two semi-transparent portions 522, and the transparent portion 523. In the irradiation area of ​​the linear light in the light-shielding mask 52, light beams that pass through multiple portions aligned in the arrangement direction are incident on the multiple light modulation elements 461 of the spatial light modulator 46. In other words, each of the multiple portions is an irradiation area of ​​light corresponding to one of the light modulation elements 461.

[0052] In this way, in the light-shielding mask 52, the light-shielding portions 521 are provided at the respective outer edge portions in the direction of interest in the light irradiation region corresponding to each light modulation element 461. Then, by blocking the light incident on the outer edge portions with the light-shielding portions 521, side lobes in the intensity distribution of the light beam in the direction of interest are selectively reduced (dimmed) on the reflecting surface of the spatial light modulator 46 and on the upper surface 91 of the substrate 9. Furthermore, by providing semi-transparent portions 522 having a higher transmittance than the light-shielding portions 521 between the center portions between both outer edge portions and each outer edge portion, the side lobes are further reduced, as will be described later.

[0053] Here, optical simulations will be described for the following cases in the light irradiation unit 4 shown in FIG. 9: omitting the light-shielding mask 52; using a light-shielding mask 52 omitting the semi-transparent portions 522; and using a light-shielding mask 52 including the semi-transparent portions 522. In these simulations, the width of the uncovered region 512 in the phase shift mask 51 (the width in the vertical direction in FIG. 10) is 16 μm, and the width of each phase shift film 511 region is also 16 μm. The transmittance of the phase shift film 511 region and the uncovered region 512 is 100%. In the light-shielding mask 52, the width of the light-transmitting portion 523 (the width in the vertical direction in FIG. 11) is 12.9 μm, the width of the semi-transparent portions 522 is 2.1 μm, and the width of the light-shielding portion 521 is 6.4 μm. The transmittance of the light-transmitting portion 523 is 100%, the transmittance of the semi-transparent portions 522 is 50%, and the transmittance of the light-shielding portion 521 is 0%. The magnification of the projection optical system 44 is 1 / 40, and the NA is 0.45. This simulation uses software different from the simulation software used to obtain the results in Figures 7 and 8. Note that the sizes of the regions in the phase shift mask 51 and the light-shielding mask 52 are merely examples and may be changed as appropriate.

[0054] 12 and 13 are diagrams showing the results of a simulation, illustrating the intensity distribution of the light beam in the direction of interest on the exposure surface (upper surface 91 of substrate 9). In FIGS. 12 and 13, the vertical axis represents relative intensity (relative intensity with the maximum intensity of the central peak, described below, set to 1), and the horizontal axis represents the position in the direction of interest. On the horizontal axis, the position of the optical axis J1 in the direction of interest is the origin (0). The dashed line L1 in FIG. 12 represents the intensity distribution when the light-shielding mask 52 is omitted, and the solid line L2 represents the intensity distribution when the light-shielding mask 52 is used without the semi-transparent portions 522. The dashed line L2 in FIG. 13 represents the intensity distribution when the light-shielding mask 52 is used without the semi-transparent portions 522 (the same as the solid line L2 in FIG. 12), and the solid line L3 represents the intensity distribution when the light-shielding mask 52 including the semi-transparent portions 522 is used.

[0055] When the light-shielding mask 52 is omitted, as shown by the dashed line L1 in FIG. 12, a central peak P11 occurs in the range of (-0.2) to (+0.2) μm in the direction of interest, and peaks P12 also occur on both sides of this range. Here, a beam width of 0.4 μm or less is targeted, and in the following description, the peak P12 outside the range of (-0.2) to (+0.2) μm in the direction of interest is referred to as a "side lobe P12." When the light-shielding mask 52 is omitted, the maximum value of the relative intensity of the side lobe P12 is approximately 0.5. Note that the oscillating waveforms occurring at the base of the central peak P11 and in each of the side lobes P12 are thought to be due to diffraction at the boundary between the region of the phase shift film 511 and the uncovered region 512 of the phase shift mask 51.

[0056] When a light-shielding mask 52 without semi-transmitting portions 522 is used, the shape of central peak P21 is substantially the same as central peak P11 when light-shielding mask 52 is omitted, as shown by solid line L2 in Fig. 12. On the other hand, the size of side lobe P22 is significantly smaller than that shown by dashed line L1 (side lobe P12 when light-shielding mask 52 is omitted), and the maximum value of the relative intensity of side lobe P22 is approximately 0.16. In this way, the side lobes are reduced by using light-shielding mask 52 having light-shielding portions 521.

[0057] Furthermore, when a light-shielding mask 52 including a semi-transmitting portion 522 is used, the size of the side lobe P32 is smaller than that of the dashed line L2 (the side lobe P22 when a light-shielding mask 52 omitting the semi-transmitting portion 522 is used), as shown by the solid line L3 in FIG. 13, and the maximum value of the relative intensity of the side lobe P32 is approximately 0.09. In this way, the provision of the semi-transmitting portion 522 in the light-shielding mask 52 further reduces the side lobe. Note that, in the solid line L3, the protruding portions present near the positions (-0.2) μm and (+0.2) μm in the central peak P31 are also smaller than those in the dashed line L2.

[0058] Although the reason why the presence of semi-transmitting portion 522 reduces the side lobes is not entirely clear, it is thought that when light-shielding mask 52 is used without semi-transmitting portion 522, strong diffracted light is generated and the side lobes become large due to the abrupt change in transmittance from 0% to 100% at the boundary between light-shielding portion 521 and light-transmitting portion 523. In light-shielding mask 52 provided with semi-transmitting portion 522, the change in transmittance at the boundary becomes gradual, which presumably suppresses diffracted light and reduces the side lobes.

[0059] As described above, the imaging device 1 includes the light source unit 41, the optical system 42 that guides light from the light source unit 41 along the optical axis J1 onto the surface of the object (the upper surface 91 of the substrate 9 in the above example), the spatial light modulator 46 that is disposed in the optical system 42 at a first position conjugate to the surface of the object and has a plurality of light modulation elements 461 that are irradiated with light from the light source unit 41, the phase shift mask 51 that is disposed in the optical system 42 at a second position conjugate to the surface of the object, and the stage movement mechanism 20 that moves the irradiation positions of the light beams of the plurality of light modulation elements 461 on the surface of the object relative to the surface. The phase shift mask 51 is a member that generates a phase difference between light incident on a central portion in a predetermined direction perpendicular to the optical axis J1 and light incident on both sides of the central portion in a light irradiation area corresponding to each light modulation element 461, and limits the width of a peak corresponding to the central portion in the intensity distribution in the predetermined direction of the light beam modulated by each light modulation element 461 and irradiated onto the surface of the object. This makes it possible to reduce the beam width of the light beam in the predetermined direction, thereby improving the resolution while using a low NA projection optical system 44. As a result, a certain degree of depth of focus can be ensured, and high-resolution pattern drawing can be achieved without being restricted by the accuracy limit of the focus mechanism that moves the objective lens.

[0060] Preferably, the imaging device 1 further includes a phase shift mask moving mechanism 56 that moves the phase shift mask 51 in a direction along the optical axis J1 and / or a direction perpendicular to the optical axis J1. This allows the position of the phase shift mask 51 to be adjusted and a stable light beam to be emitted even when the state of the light source unit 41 fluctuates (for example, when a change or fluctuation occurs in the quality of the light beam emitted from the light source unit 41).

[0061] Preferably, the imaging device 1 further includes a light-shielding mask 52 arranged at a third position conjugate with the surface of the object within the optical system 42. The light-shielding mask 52 has light-shielding portions 521 that block light incident on each outer edge portion in the predetermined direction in the light irradiation area corresponding to each light modulation element 461. This makes it possible to appropriately reduce side lobes in the intensity distribution of the light beam irradiated onto the surface of the object.

[0062] Preferably, light-shielding mask 52 is a light-transmitting member 529 having light-shielding portions 521 provided at each outer edge portion in the predetermined direction, and semi-light-transmitting portions 522 having higher transmittance than light-shielding portions 521 are further provided in light-transmitting member 529 between the center portion between the outer edges and each outer edge portion. This makes it possible to further reduce side lobes. Depending on the design of light-shielding mask 52, light-shielding mask 52 may be formed by bonding together a block-shaped light-transmitting member that constitutes light-transmitting portion 523, a block-shaped light-shielding member that constitutes light-shielding portion 521, and a block-shaped semi-light-transmitting member that constitutes semi-light-transmitting portion 522 (similar to phase-shift mask 51).

[0063] Preferably, the imaging device 1 further includes a light-shielding mask moving mechanism 57 that moves the light-shielding mask 52 in a direction along the optical axis J1 and / or in a direction perpendicular to the optical axis J1. This allows the position of the light-shielding mask 52 to be adjusted to irradiate a stable light beam even if the state of the light source unit 41 fluctuates.

[0064] In the example of FIG. 9 , the phase shift mask 51, the light-shielding mask 52, and the spatial light modulator 46 are arranged in this order in the optical system 42, from the light source unit 41 toward the upper surface 91 of the substrate 9. However, the order of the phase shift mask 51, the light-shielding mask 52, and the spatial light modulator 46 is not particularly limited as long as they are arranged at positions conjugate with the upper surface 91 of the substrate 9. For example, the spatial light modulator 46 may be arranged closest to the light source unit 41. In this case, the phase shift mask 51 forms an illumination area illuminated by light passing through each light modulation element 461, and a phase difference occurs in this illumination area between light incident on a central portion in the direction of interest and light incident on both outer sides of the central portion. Furthermore, the light-shielding mask 52 forms an illumination area illuminated by light passing through each light modulation element 461, and light incident on each outer edge portion in the direction of interest is blocked by the light-shielding portions 521 in this illumination area. Thus, in each of the phase shift mask 51 and the light-shielding mask 52, the light irradiation area corresponding to each light modulation element 461 may be either an area through which the light beam (intended to be incident on each light modulation element 461) passes, or an area through which the light beam that has passed through each light modulation element 461 passes.

[0065] Furthermore, the light-shielding mask 52 may be disposed closer to the light source unit 41 than the phase shift mask 51. In this case, it is also possible to reduce side lobes in the intensity distribution of the light beam. On the other hand, the light-shielding mask 52 has a high degree of design freedom, for example, by changing the transmittance of the semi-transparent portions 522. From the viewpoint of reducing side lobes in the intensity distribution of the light beam by the light-shielding mask 52, it is preferable to design the light-shielding mask 52 in accordance with the intensity distribution in the direction of interest of light that has passed through the phase shift mask 51. Therefore, by disposing the light-shielding mask 52 between the phase shift mask 51 and the substrate 9 in the optical system 42, the phase shift mask 51 and the light-shielding mask 52 can be easily designed.

[0066] FIG. 14 is a cross-sectional view showing another example of a phase shift mask. The vertical direction in FIG. 14 is the observation direction, and the direction perpendicular to the paper surface is the arrangement direction. In phase shift mask 51a in FIG. 14, plate-shaped light-transmitting members 519 extend in the observation direction and the arrangement direction. A phase shift film 511 similar to that in FIG. 10 is provided on one main surface of light-transmitting member 519, and a light-shielding portion 521 (light-shielding film) and a semi-light-transmitting portion 522 (semi-light-transmitting film) similar to those in FIG. 11 are provided on the other main surface. Phase shift mask 51a essentially integrates a phase shift mask and a light-shielding mask. Phase shift mask 51a is positioned conjugate to upper surface 91 of substrate 9 within optical system 42. In light irradiation unit 4 having phase shift mask 51a, light-shielding mask 52 is omitted.

[0067] In the phase shift mask 51a, in the light irradiation region corresponding to each light modulation element 461, the center in the direction of interest overlaps with the uncoated region 512, and both outer edges of the center overlap with the region of the phase shift film 511. This allows a phase difference to occur between the light incident on the center and the light incident on both outer edges of the center, thereby reducing the beam width in the direction of interest of the light beam irradiated onto the upper surface 91 of the substrate 9. Furthermore, in the light irradiation region, light incident on each outer edge in the direction of interest is blocked by the light-shielding portions 521. This allows appropriate reduction of side lobes in the intensity distribution of the light beam in the direction of interest. Furthermore, by providing the semi-transparent portions 522, the side lobes can be further reduced. In the light irradiation unit 4 having the phase shift mask 51a, the light-shielding mask 52 is omitted, thereby shortening the length from the light source unit 41 to the substrate 9 and enabling the light irradiation unit 4 to be miniaturized.

[0068] FIG. 15 is a diagram showing another example of a light-shielding mask. The vertical direction in FIG. 15 is the direction of interest, and the horizontal direction is the arrangement direction. Light-shielding mask 52a in FIG. 15 includes a pair of metal plates 526, a pair of support rails 527, and a gap adjustment mechanism 528. Each metal plate 526 is a plate-like member extending in the direction of interest and the arrangement direction. The pair of metal plates 526 are arranged at a distance in the direction of interest. The pair of support rails 527 extend in the direction of interest and are provided at a distance in the arrangement direction. Both ends of metal plate 526 in the arrangement direction are supported by the pair of support rails 527 so as to be movable in the direction of interest. The gap adjustment mechanism 528 has a motor, a ball screw, etc., and is capable of changing the width of the gap between the pair of metal plates 526.

[0069] 15, in the light irradiation region corresponding to each light modulation element 461, light incident on each outer edge portion in the target direction is blocked by the metal plate 526, which is a light blocking portion. This makes it possible to appropriately reduce side lobes in the intensity distribution of the light beam in the target direction. Furthermore, even if the state of the light source unit 41 changes, the side lobes can be appropriately reduced by adjusting the width of the gap between the pair of metal plates 526.

[0070] The rendering device 1 can be modified in various ways.

[0071] In the imaging device 1, a plurality of light-shielding masks 52 may be prepared, and the light-shielding masks 52 on the optical axis J1 may be switchable by a switching mechanism such as a revolver. For example, if the transmittance of the light-shielding mask 52 arranged on the optical axis J1 changes due to deterioration or the like, the switching mechanism may place a new light-shielding mask 52 on the optical axis J1, thereby making it possible to maintain a constant state of the light beam irradiated onto the upper surface 91 of the substrate 9. The plurality of light-shielding masks 52 may include light-shielding masks 52 having different sizes and transmittances for the light-shielding portion 521, the semi-transparent portion 522, and the transparent portion 523. In this case, for example, one light-shielding mask 52 may be selected depending on fluctuations in the laser light from the light source unit 41. Alternatively, one light-shielding mask 52 may be selected by performing a drawing test in advance.

[0072] The imaging device 1 may use a spatial light modulator in which a plurality of light modulation elements 461 are arranged two-dimensionally. The spatial light modulator 46a in the example of FIG. 16 is a DMD (Digital Micromirror Device) in which a plurality of micromirrors, each of which is a light modulation element 461, are arranged two-dimensionally. In the DMD, the attitude (orientation) of the plurality of micromirrors is changeable. In the light irradiation unit 4 including the spatial light modulator 46a, a plurality of light beams are irradiated onto the plurality of light modulation elements 461 by an illumination optical system (not shown). When the attitudes of all the light modulation elements 461 are in the ON state, the light irradiated onto the plurality of light modulation elements 461 is incident on the plurality of element lenses 471 of the lens array 47, respectively, and is guided to the phase shift mask 51b.

[0073] In the phase shift mask 51b, a plurality of phase shift portions 510 are arranged two-dimensionally. In each phase shift portion 510, a phase shift film 511 is provided in an annular region surrounding a circular uncoated region 512. Light from a plurality of lens elements 471 is incident on each of the plurality of phase shift portions 510. In each phase shift portion 510, a light irradiation region corresponding to the light modulation element 461 is formed with its center approximately at the center of the circular uncoated region 512. In the light irradiation region, the central portion overlaps the uncoated region 512, and the outside of the central portion (the outside in all directions perpendicular to the optical axis J1) overlaps the phase shift film 511. This makes it possible to generate a phase difference between the light incident on the central portion and the light incident on the outside of the central portion. As a result, the beam width (i.e., beam diameter) in all directions of the light beam that passes through the phase shift portion 510 and is irradiated onto the upper surface 91 of the substrate 9 is reduced. 14, the phase shift mask 51b may include a light-shielding portion 521 and a semi-transmitting portion 522. In this case, an annular semi-transmitting portion 522 is provided around a circular light-transmitting portion 523, and an annular light-shielding portion 521 is provided around the semi-transmitting portion 522. Of course, separate light-shielding masks may be used. The imaging device 1 may use a spatial light modulator other than a GLV or a DMD.

[0074] The light source unit 41 may emit light other than laser light. The configuration of the optical system 42 may be changed as appropriate.

[0075] In the imaging device 1, the moving mechanism that moves the irradiation position of the light beam on the upper surface 91 of the substrate 9 relative to the upper surface 91 may be a mechanism other than the stage moving mechanism 20. For example, a moving mechanism that moves the light irradiation unit 4 may be provided, and the moving mechanism may include a rotating mirror or the like that scans the irradiation position of the light beam.

[0076] The target object on which the pattern is drawn by the drawing apparatus 1 may be something other than the substrate 9.

[0077] The configurations in the above-described embodiment and each modification may be combined as appropriate as long as they are not mutually contradictory. [Explanation of symbols]

[0078] 1 Drawing device 9 Substrate 20 Stage movement mechanism 41 Light source section 42 Optical system 46,46a Spatial Light Modulator 51, 51a, 51b, 81 Phase shift mask 52,52a Light-shielding mask 56 Phase shift mask movement mechanism 57 Light-shielding mask movement mechanism 91 (board) top surface 461 Optical Modulator 521 Light blocking part 522 Semi-transparent part 523 Translucent part 526 Metal plate 529 Translucent material J1, J2 optical axis P1, P11, P21, P31 Central Peak P2, P12, P22, P32 side lobes

Claims

1. A drawing device, comprising: a light source unit; an optical system that guides light from the light source unit onto a surface of an object along an optical axis; a spatial light modulator disposed in the optical system at a first position conjugate with the surface of the object, the spatial light modulator having a plurality of light modulation elements onto which the light from the light source unit is irradiated; a phase shift mask that is disposed in a second position conjugate with the surface of the object within the optical system, and that generates a phase difference between light incident on a central portion in a predetermined direction perpendicular to the optical axis and light incident on both outer sides of the central portion in a light irradiation area corresponding to each light modulation element, and that limits the width of a peak corresponding to the central portion in the intensity distribution in the predetermined direction of the light beam modulated by each light modulation element and irradiated onto the surface; a moving mechanism that moves irradiation positions of the light beams of the plurality of light modulation elements on the surface of the object relative to the surface; A drawing device comprising:

2. 2. The drawing device according to claim 1, a light-shielding mask that is arranged at a third position conjugate to the surface of the object within the optical system, the light-shielding mask having a light-shielding portion that blocks light incident on each outer edge portion in the predetermined direction in a light irradiation area corresponding to each of the light modulation elements, and that reduces side lobes in the intensity distribution of the light beam.

3. 3. The drawing device according to claim 2, a lithography system in which the light-shielding mask is disposed between the phase-shifting mask and the object in the optical system;

4. 3. The drawing device according to claim 2, the light-shielding mask is a light-transmitting member in which the light-shielding portion is provided on each of the outer edge portions in the predetermined direction, and the light-transmitting member is further provided with a semi-transmitting portion having a higher transmittance than the light-shielding portion between a center portion between the outer edge portions and each of the outer edge portions.

5. 2. The drawing device according to claim 1, a phase shift mask having a light-shielding portion that blocks light incident on each outer edge portion in the predetermined direction in a light irradiation area corresponding to each light modulation element, thereby reducing side lobes in the intensity distribution of the light beam.

6. 6. The drawing device according to claim 1, The drawing apparatus further comprises a phase shift mask moving mechanism that moves the phase shift mask in a direction along the optical axis and / or a direction perpendicular to the optical axis.

7. 5. The drawing device according to claim 2, wherein: The imaging apparatus further comprises a light-shielding mask moving mechanism that moves the light-shielding mask in a direction along the optical axis and / or a direction perpendicular to the optical axis.

Images