Four-layer pwb charge carrier with asymmetric image forces

Abstract

To provide a charge carrier which is composed of a charge retention layer and a potential control layer parallel to the charge retention layer and shorter in width, and which reduces the backward electrostatic force acting on the charged charge carrier and increases the forward electrostatic force in a section where the charge carrier moves from when the charge is charged until when the charge is collected.SOLUTION: A charge retention layer 41 perpendicular to the moving direction is added to the tip of a charge retention layer 42 parallel to the moving direction of a charge carrier 4, and the distance between the charge retention layer parallel to the moving direction and a charging electrode (electret) 3 is minimized within the allowable range of mechanical precision.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a novel electrostatic generation method that utilizes the asymmetric image force generated in a four-layer PWB charge carrier having a shorter potential control layer adjacent to the charge storage layer, thereby moving the charge carrier under its own power. [Background technology]

[0002] In order to solve global warming and other environmental problems, various carbon dioxide-free power generation methods have been implemented. Examples include nuclear power generation, solar power generation, wind power generation, nuclear fusion power generation, and geothermal power generation. However, these methods have problems in terms of safety, stability, cost, durability, and miniaturization. On the other hand, electrostatic generators are not dangerous throughout their manufacture, use, and disposal, and are not affected by weather or the time of generation, providing a constant and stable amount of power generation. Furthermore, they are easy to miniaturize, eliminating the need for capacitors or power transmission lines. Furthermore, they require almost no energy replenishment or maintenance, have a long lifespan (approximately 100 years), and are a low-cost power source.

[0003] In such an electrostatic generator, a charge is injected into a charge carrier by a low-potential charge charging electrode (hereinafter referred to as the charging electrode), and the charge carrier is transported and lifted up against the electrostatic force acting on it in an electric field to a high-potential charge recovery electrode (hereinafter referred to as the recovery electrode), where the transported charge is recovered. (old electrostatic generator)

[0004] A stronger force is required to resist this electrostatic force and raise the charge carrier to a higher potential. In the Van de Graaff electrostatic generator, which is currently the most widely used electrostatic generator, this force is obtained by an electric motor. However, in this case, the electrical energy consumed by the motor is greater than the electrical energy generated, so it is not exactly a generator but a high-voltage generator. Small electrostatic generators that use wave power have also been developed, but their output is small and they are currently not widely used. (New electrostatic generator)

[0005] In response to this, the applicant has devised a new type of electrostatic generator that uses a newly discovered asymmetric electrostatic force as the transport force of the charge carrier. Here, asymmetric electrostatic force is an electrostatic force characterized by the fact that the absolute value of the electrostatic force acting on a charged non-spherical conductor is different before and after the direction of the electric field is reversed. Furthermore, a non-spherical shape refers to a three-dimensional shape with a longitudinal cross section that is asymmetric between the front and rear of the traveling direction, such as a horizontally placed gutter or box. (asymmetric electrostatic force)

[0006] There are three types of electrostatic forces: the Coulomb force (electric field force) which acts on charges placed in an electric field, the image force which acts on charges placed near a conductor even in the absence of an electric field, and the gradient force which acts on an object placed in a converging electric field even in the absence of a charge. Similarly, there are three types of asymmetric electrostatic forces. (Non-Patent Document 2) Of these, asymmetric electric field force and asymmetric image force are used in new electrostatic generators. As asymmetric image force electrostatic generators have a simpler structure and are thought to be the more commonly used, the following explanation will focus on asymmetric image force. The detailed principles, structures, etc. of asymmetric image force-driven electrostatic generators are described in related prior patents (Patent Documents 1 to 5) and papers (Non-Patent Documents 1 and 2). (Two-dimensional difference method)

[0007] As shown in Figure 1, when a point charge 1 is at a distance r from a grounded conductive plate 2, an electrostatic force calculated by the following equation (1) acts on the point charge 1. This corresponds to the image force. F=q 2 / 4πε0(2r) 2 (1) Although the electric charge is explained as a point charge or a spherical charged body, the image force is also generated in a non-spherical charged body. If the shape of the charged body is symmetrical, the strength of the image force acting on the charge does not change even if the direction of the charged body is reversed. However, if the shape is asymmetrical, the strength changes significantly when the direction is reversed (Non-Patent Documents 1 and 2). (electric field-driven electrostatic generator)

[0008] For example, a two-dimensional finite difference simulation revealed that when the charge amount of the horizontally placed gutter-shaped charged body 11 shown in Figure 2 is 1 μC and the distance from the grounded conductor plate 2 is 1.0 mm, the image force acting on the charged body 11 is 32.4 N when the opening faces the grounded conductor plate 2, and conversely, it is 69.0 N when the bottom faces the grounded conductor plate 2. Hereinafter, this phenomenon will be referred to as the asymmetric image force.

[0009] In an image-force-driven electrostatic generator, which uses such asymmetric image forces as the driving force for the charge carrier, the charge carrier is charged by electrostatic induction at a potential of 0 V, and then transported to the recovery electrode by the image force. When the energy required for transport is smaller than the image force, the charge carrier has excess kinetic energy remaining when it reaches the recovery electrode. This excess energy can be used to raise the transported charge to a higher potential than ground potential. In other words, the energy of the image force acting on the charge held in the charge carrier is used in two ways: mechanical energy to transport the charge carrier, and electrical energy to raise the transported charge to a higher potential.

[0010] FIG. 3 is a front view of a basic unit of such an image force driven electrostatic generator. The main components are a charging potential source 3 (e.g., a charging electrode or a charging electret; hereafter, the term "charging electrode" also includes a charging electret; in the following explanation, simulations are performed using an electrode with an applied voltage, but similar results are obtained with an electret at the same potential. Although the explanation in this patent mainly uses electrodes, in commercial production, all components will be replaced with electrets), a horizontally placed gutter-shaped charge carrier 4, and a recovery electrode (referred to as a charge recovery unit depending on the device configuration) 5. The charge carrier 4 consists of upper and lower horizontal plates 42 parallel to its direction of movement and a vertical plate 41 in front of it, perpendicular to the direction of movement. The horizontal plate 42 and vertical plate 41 are layers that retain the charge stored by the charging electrode. An actual device would also include a charging electrode power source 31, a recovery electrode capacitor 6, a conductive terminal 7 for injecting charge, and a conductive terminal 8 for recovering charge. For simplicity, however, only the main components will be described below.

[0011] When the charge carrier 4 enters the space between the pair of upper and lower charging electrodes 3 from the left in Figure 3 and reaches the position shown in Figure 3, an air capacitor is formed between the upper and lower horizontal plates 42 of the charge carrier 4 and the pair of upper and lower charging electrets 3. At this time, when the charge carrier 4 is grounded by the charge injection terminal 7, the charge in the air capacitor is injected from the ground into the charge carrier 4 by electrostatic induction. In all of the following examples, charging of the charge carrier is explained using this electrostatic induction method, but the principle is the same for other charging methods, such as frictional charging and corona discharge. However, for practical devices, the electrostatic induction method is best. The charged charge carrier 4 then moves further to the right in the figure and enters a pair of upper and lower recovery electrodes 5. The recovery electrodes 5 and the charge carrier 4 are then electrically connected by charge recovery terminals 8, which are provided inside the pair of upper and lower recovery electrodes 5 and come into contact with the charge carrier 4, and the charge passes through the recovery electrode 5 and is stored in the recovery electrode capacitor 6. The charge then flows to an external load through a circuit not shown.

[0012] When the charged electret 3 is negatively charged, the charge carrier 4 is positively charged. As a result, a Coulomb force acts between the two, acting between charges of opposite polarity. In addition, an image force acts between the supporting electrode of the charged electret and the positive charge of the charge carrier. These two forces combine to produce a receding electrostatic force that pushes the charge carrier to the left in the figure. Similarly, when the charge carrier approaches the recovery electrode on the right, a forward electrostatic force, which is a combination of the Coulomb force and the image force, acts.

[0013] Therefore, when the charge carrier 4 is asymmetric, the leftward receding electrostatic force acting on the edges of the upper and lower horizontal plates 42 of the charge carrier 4 is weak, the electric field forces acting vertically on the front and back of the horizontal plates 42 are equal in strength in the upward and downward directions and cancel each other out, and the rightward forward electrostatic force acting on the front vertical plate 41 is strong. As a result, the forward electrostatic force to the right becomes stronger than the backward electrostatic force to the left, and the charge carrier 4 can reach the recovery electrode 5 from the charged electret 3. Therefore, if the charge carried by the charge carrier 4 is recovered by the recovery electrode 5, this device becomes an electrostatic generator. If the charge is not recovered, the device becomes an electrostatic motor.

[0014] Therefore, we performed a two-dimensional finite difference simulation to determine the electrostatic force acting on the charged charge carrier 4 between the charging electret 3 and the recovery electrode 5. An example of this is shown in Figure 4. In the figure, the distance between the right end of the charging electret electrode and the left end of the charge carrier is defined as the position of the charge carrier (the same applies below). First, after the charge carrier 4 leaves the charged electret 3, the electrostatic force acting on the charge carrier 4 is negative, i.e., directed leftward, for approximately 10 mm. However, after 10 mm, the electrostatic force turns positive, i.e., directed rightward, and its absolute value becomes larger, as can be seen from Figure 4. Therefore, excess kinetic energy remains in the charge carrier 4 when it reaches the recovery electrode 5. This excess energy can be used to raise the electrons transported from a low potential (0 V) to a higher potential (e.g., +1000 V). In other words, electricity can be generated.

[0015] In fact, an asymmetric image force driven electrostatic power generation experimental device (bench model) was prototyped based on this principle, and the results of power generation are described in Patent Documents 4 and 5. However, the amount of power generated is small, on the order of microwatts, and because the prototype generator is only about 10cm high, it cannot be stacked in multiple stages, so it does not reach the output required for a commercially available device. Therefore, further increases in output are essential.

[0016] Simulations have shown that higher output can be achieved by downsizing parts such as the charge carrier 4, charging electrode (electret) 3, and recovery electrode 5. See, for example, Figure 15 of Patent Document 7. To facilitate downsizing, the carousel-type charge carrier disk described in Patent Documents 4 and 5 has been modified to a system in which horizontally placed trough-type charge carriers 4 are arranged radially on an insulating disk, as shown in Figure 5. This system will be referred to as charge carrier disk 9 below.

[0017] Additionally, the charging electrode (electret) 3 and recovery electrode 5 were changed from a hanging type to a method in which they were alternately arranged radially on an insulating disk, as shown in Figure 5. Hereinafter, this will be referred to as the charging / recovery electrode disk 10. In this case, the fixed, flat shape makes it relatively easy to fabricate. However, the charge carrier disk 9, which has a three-dimensional shape, is difficult to mechanically fabricate. A specific manufacturing method has been proposed (Non-Patent Document 3), but mass production is difficult when downsizing. In particular, simulations have shown that the thinner the upper and lower horizontal plates 42 of the trough-shaped charge carrier 4, the smaller the receding image force (Non-Patent Document 3). However, the manufacturing method of folding aluminum plates limits the thickness to 0.2 mm. A thickness of 0.1 mm or less is insufficient to maintain horizontality. This problem can be solved by using electrical circuit boards (PWBs), for which manufacturing technology is currently established. DETAILED DESCRIPTION OF THE INVENTION Example 1

[0018] FIG. 6 shows an elevation view of the existing four-story PWB 14. Patent applications have been filed for electrostatic power generation methods using a charge carrier configured with a four-layer PWB as shown in Figure 6 (Patent Documents 7 to 10), but none of them are capable of moving the charge carrier by itself without relying on external force such as an electric motor. Therefore, it is an object of the present invention to provide a four layer PWB charge carrier with a weaker receding electrostatic force acting on it and a stronger forward electrostatic force so that it can move under its own power. In Figure 6, the width of the potential control layer 14-3, which is made up of two inner copper layers 14-3 in the middle, is shorter than the width of the charge retention layer 14-2, which is made up of the upper and lower outer copper layers 14-2 of the four-layer PWB 14, to create an asymmetric electrostatic four-layer PWB charge carrier, as shown in Figure 7. A simulation of the electrostatic force acting on the four-layer PWB charge carrier 4 was performed using the configuration shown in Figure 7. Note that the thickness is slightly different from that shown in Figure 6, but this is to simplify the simulation.

[0019] As shown in Figure 8, the charge retention layer 42 of the four-layer PWB charge carrier 4 is formed by placing eight trapezoidal outer copper layers 42 radially on the front and back of a PWB disk with a radius of 50 mm. The length of the charge retention layer 42 and potential control layer 43 is 23 mm, and the width at the dotted line in the figure, i.e., the midpoint of the length of the charge retention layer 42, is 9.2 mm. Unlike Example 1, no recovery electrode 5 is provided, and the charge recovery point is directly connected to the recovery capacitor 6. For this purpose, charge recovery protrusions 45 are provided on the outer periphery of the charge retention layer 42. Although not shown, there is an inner copper layer 43 inside the outer copper layer 42 that serves as the potential control layer 43.

[0020] The charge / recovery disk 10, which sandwiches the charge carrier disk 9 from above and below, was made by radially arranging eight trapezoidal electrodes on the surface of a dielectric disk with a radius of 50 mm, and then coating the electret layer 3 on top of them, as shown in Figure 9. Eight sets of three recovery terminals 8, one for each recovery voltage, are formed on the outer periphery, and are connected to three recovery charge capacitors 6 for each same recovery voltage. When the power supply is in use, they are connected to a load 12 beyond.

[0021] The electrostatic force that the charge retention layer 42 of the charge carrier 4 configured as shown in Figures 7 and 8 receives while being charged to -10.79 nC under the charged electret 3 shown in Figure 9 and then rotating to the next charged electret 3 was simulated using a two-dimensional finite difference method. Note that in the actual device, charging is performed by the electret 3, but the simulation was performed with a charging electrode 3 at the same potential of -3.5 kV. Also, although the electret 3 is normally negative polarity, it was made positive polarity to simplify the simulation. Furthermore, when a similar simulation is performed by changing the shape of the parts of the charge carrier 4, the amount of charge charged will vary slightly depending on the shape, but in order to compare the effect of the shape change, all It was done at -10.79nC. The charge retention layer 42 of the charge carrier 4 is grounded below the charging electrode 3, and just before the next charging electrode 3, its charge recovery protrusion 45 contacts the recovery terminal 8 of the charging / recovery disk 10. During this time, the inner copper layer 43, which becomes the potential control layer 43, is kept in an electrically floating state. FIG. 10 shows the results of a simulation of the electrostatic force acting on the charge carrier 4 of the configuration shown in FIG. As expected, the forward electrostatic force was greater than the backward electrostatic force, and an excess energy of 4.0 μJ was obtained. However, since the excess energy was small, the shapes of other parts of the charge carrier 4 were changed and the electrostatic force acting between them was similarly determined by simulation.

[0022] First, the thickness of the potential control layer (inner copper layer) 43 was increased from 20 μm to 40 μm, 60 μm, and 80 μm. The electrostatic force acting on the charge carrier 4 at this time is shown in FIG. 11, and the surface potential is shown in FIG. At a distance of 0.0 mm from the charging electrode 3, the electrostatic force applied to the upper and lower charge retention layers 42 is −2.18 mN, but the electrostatic force applied to the potential control layer 43 is very low at −0.06 mN, so the electrostatic force applied to the potential control layer 43 will be omitted below. In all simulations, including this one, the x-direction positions of the left ends of the charge retention layer 42 and the potential control layer 43 were kept the same. The reason for this is that when the potential control layer 43 was protruded 0.5 mm to the left, an extremely large receding electrostatic force of -28.79 mN was applied to the left end. The surplus energy calculated from FIG. 11 is shown in FIG. It is clear from FIG. 13 that even if the thickness of the potential control layer (inner copper layer) 43 is changed, the amount of surplus energy obtained remains substantially the same. 12, it can be seen that even if the shape of the part is changed, the surface potential of the charge carrier 4 during transportation remains almost the same. Therefore, the display of the surface potential when the shape of the part is changed in other ways will be omitted below.

[0023] Next, when the width of the potential control layer (inner copper layer) 43 is changed from 1.0 mm to 0.6 mm, 1.4 mm, 3.1 mm, and 4.6 mm, the electrostatic force acting on the charge carrier 4 is shown in FIG. 14, and the resulting surplus energy is shown in FIG. 15. From Figure 15, it can be seen that the energy gained decreases if the width of the potential control layer (inner copper layer) is too narrow or too wide, so there is an optimum value between them, and in this case, the optimum value is judged to be around 3.0 mm. However, even so, the surplus energy is not large at 7.6 μJ.

[0024] Next, a similar simulation was performed by changing the distance between the charge retention layer (outer copper layer) 42 and the potential control layer (inner copper layer) 43 from 0.16 mm to 0.04 mm, 0.08 mm, 0.24 mm, and 0.32 mm. The results of the electrostatic force are shown in Figure 16, and the results of the surplus energy are shown in Figure 17. In FIG. 16, the graph for a layer spacing of 0.32 mm is omitted because it almost overlaps with the graph for a layer spacing of 0.08 mm. 17, the wider the gap between the charge retention layer (outer copper layer) 42 and the potential control layer (inner copper layer) 43, the more energy is gained. However, if the gap exceeds 0.24 mm, the energy actually decreases. Therefore, for this configuration, the optimum value is determined to be around 0.24 mm. At that time, the surplus energy is 9.0 μJ or more.

[0025] Next, the thickness of the charge retention layer (outer copper layer) 42 was changed from 0.02 mm to 0.04 mm, 0.08 mm, and 0.16 mm, and the results are shown in FIGS. From the results of Figures 18 and 19, it can be seen that the thicker the charge retention layer 42, the greater the backward electrostatic force in the first half, but also the forward electrostatic force in the second half, and the excess energy resulting from this difference also increases, reaching 11 μJ at a film thickness of 0.16 mm.

[0026] 18 and 19, it appears that the thicker the charge retention layer 42, i.e., the thicker the right vertical end face of the charge retention layer 42, the more transported charges are collected there, generating a stronger forward electrostatic force. Therefore, we first calculated the relationship between the thickness of the right vertical end face and the electrostatic force acting on this face. The results are shown in Figure 20. As expected, the thicker the charge retention layer 42, i.e., the thicker the right vertical edge face, the stronger the electrostatic force acting thereon. However, the electrostatic force is not directly proportional to the thickness, but decreases as the thickness increases. Next, we calculated the amount of charge collected at the right vertical end face of the charge retention layer for each thickness of the right vertical end face, and the results are shown in Figure 21. From FIG. 21, it can be seen that the amount of charge collected on the right vertical end face is roughly proportional to the thickness of the right vertical end face, and becomes slightly flatter as the thickness increases. When this charge amount is compared with the total charge amount possessed by the potential holding layer 42, that is, −10.97 nC, the ratio of the charge collected on the right vertical end face to the total charge amount is as shown in FIG. Even if the thickness of the charge retention layer 42, that is, the thickness of the right vertical end face is 160 μm, the proportion of the charges that gather at the right vertical end face is only 13% of the total amount of transported charges.

[0027] From the results of FIGS. 21 and 22, it is expected that if the charge retention layer 42 is made thicker, the amount of charge collected therein will increase further, and the electrostatic force acting on the charge will become stronger. However, as shown in FIG. 18, when the thickness of the charge retention layer 42 is increased, the forward electrostatic force in the latter half becomes stronger, but the backward electrostatic force in the first half also becomes stronger. Therefore, if the thickness of the charge retention layer 42 is made thinner in the first half and thicker in the second half, the backward electrostatic force will be weakened and the forward electrostatic force will be strengthened, and the obtained excess energy should be further increased. By the way, if the thickness of the first half is 20 μm and the thickness of the second half is 80 μm, the surplus energy obtained will increase to 14.4 μJ. Example 2

[0028] Therefore, it is expected that the amount of surplus energy obtained will increase further by making the first half thinner and the second half thicker. For example, see the configuration shown in Figure 23. Although it is technically possible to fabricate the charge carrier 42, the thicker part is an excessive part for the purpose of simply holding a charge, and it would be a waste of precious resources. Therefore, the structure shown in Figure 24 has been considered. This configuration is difficult to fabricate and there are concerns about its long-term durability.

[0029] Therefore, a possible configuration is to form the vertical surface 41 standing upright at the right end on the right side surface of the dielectric support 44, as shown in Figure 25. In fact, this configuration can be easily fabricated using current four-layer PWB manufacturing technology, although details will be omitted. The dielectric layer 44, which is the base of the charge carrier disk 9, is limited to the inside of the charge carrier 4 rather than covering the entire surface. This is because if the dielectric layer 44, which has a high dielectric constant of 4.6, were to come into direct contact with the right vertical plate 41, approximately 80% of the charges of the opposite polarity to those collected on the vertical plate 41 would appear on the surface of the dielectric layer 44 due to electrostatic polarization, canceling approximately 80% of the forward electrostatic force acting on the charges on the vertical plate 41. The same phenomenon would occur if an air gap existed between the vertical plate 41 and the dielectric layer 44. Conversely, charges would also appear on the left surface of the support dielectric layer 44 due to electrostatic polarization, generating a backward electrostatic force pulling the polarized charges to the left. However, this is kept low by the effect of the potential control layer 43.

[0036] The electrostatic force acting on the charge carrier 4 having the configuration shown in Fig. 25 was calculated by the two-dimensional finite difference method in the same manner as in Example 1. The results are shown in Fig. 26. In Example 1, the distance between the horizontal surface 42 of the charge carrier 4 and the charging electrode 3 was 1.1 mm, and the charging voltage was +3.5 kV. In Example 2, however, the distance was reduced to 0.1 mm, and the charging voltage was set to 0.34 kV. This is because, in all simulations of Example 1, the forward electrostatic force increased as the charge carrier 4 approached the next charging electrode 3. This result indicates that the forward electrostatic force increases as the distance between the charge carrier 4 and the next charging electrode 3 decreases. Therefore, to further reduce the distance, the distance between the charge carrier 4 and the charging electrode 3 was reduced from 1.1 mm to 0.1 mm. The excess energy at this time was 233 μJ, more than 16 times the maximum value of 14 μJ in Example 1. This is thought to be due to the combined effect of increasing the height of the right vertical surface 41 from 0.32 mm to 0.76 mm, both top and bottom, and reducing the distance between the charging electrode 3 and the charge retention layer 42 from 1.1 mm to 0.1 mm. The proportion of charges collected on the right vertical surface 41 also increased significantly from the maximum value of 13% in Example 1 to 74%.

[0037] All of the above has been explained using a four-layer charge carrier with charge retention layers on the top and bottom and a potential control layer on the inside, but the same results can be obtained with a two-layer structure consisting of only a charge retention layer and a potential control layer. Although an insulating disk was used as the support for the charge retention layer and the potential control layer, a belt-shaped support may also be used. Although the explanation was given using a disk with a radius of 50 mm, the present invention is applicable regardless of the radius of the disk. Although the length of the charge retention layer and the potential control layer has been described as 23 mm, they can be made longer or shorter depending on the shape and size of the support. Furthermore, the support used in this example is a resin with a high dielectric constant of 4.6. This is because the support used is the same as that used in four-layer PWBs currently manufactured in Japan. For the purposes of this invention, a resin with a low dielectric constant is preferable. An air layer or vacuum layer is particularly ideal. In this case, however, both layers must be supported from the sides. This reduces or eliminates the polarization charge generated by electrostatic polarization on the surface of the resin layer, thereby reducing or eliminating the receding electrostatic force acting there. In addition, the distance between the horizontal portion of the potential holding layer and the opposing charging electrode (electret) is described as 1.1 mm in Example 1 and 0.1 mm in Example 2, but it is preferable to make it narrower within the range allowed by mechanical precision. Furthermore, although the charge storage layer is charged by electrostatic induction in the above description, other methods such as corona charging and friction charging may also be used. Furthermore, although the charge recovery from the charge retention layer was carried out by contacting the charge recovery terminal with the peripheral protrusion of the charge retention layer in a location where there was no electric field from the charging electrode, other methods may also be used, for example, by contacting the charge recovery terminal between the upper and lower recovery electrodes, or by corona discharge as in a Van de Graaff device. [Prior art documents] [Patent documents]

[0038] [Patent Document 1] Japanese Patent Application Publication No. 2020-150780 [Patent Document 2] Patent Publication No. 2021-108524 [Patent Document 3] Japanese Patent Publication No. 2022-2436 [Patent Document 4] Japanese Patent Publication No. 2022-084111 [Patent Document 5] Japanese Patent Publication No. 2022-186550 [Patent Document 6] Japanese Patent Application Publication No. 2023-138883 [Patent Document 7] Patent application 2023-179892 [Patent Document 8] Patent application 2023-208882 [Patent Document 10] Patent application 2024-008341 [Non-patent literature]

[0039] [Non-Patent Document 1] K. Sakai. 2006 American Society of Electrostatic Engineers Annual Conference Proceedings, p. 137 [Non-patent document 2] K.Sakai.[Asymmetric Electrostatic Forces and a New Electrostatic Generator], Nova Science Publishers, New York,2010 [Non-patent document 3] K. Sakai, “The manufacturing method of the field driven generator”, London Journal of Engineering Research Volume 22, Issue 4. (2022) [Brief explanation of the drawings]

[0040] [Figure 1] FIG. 1 is a schematic diagram illustrating the conventionally known principle of image force. [Figure 2] FIG. 2 is a schematic diagram illustrating the principle of asymmetric image force. [Figure 3] FIG. 3 is a front view of the basic unit of the image force driven electrostatic generator. [Figure 4] FIG. 4 is a graph showing the electrostatic force acting on the charged charge carrier between the charging electrode (electret) and the recovery electrode. [Figure 5] FIG. 5 is a plan view of a charge carrier disk in which a plurality of charge carriers are radially arranged. [Figure 6] Figure 6 is an elevation view of an existing four-layer PCB. [Figure 7] FIG. 7 is an elevation view of a four-layer PCB charge carrier showing asymmetric electrostatic forces. [Figure 8] FIG. 8 is a plan view of a charge carrier disk having charge storage layers on both sides of the charge carrier. [Figure 9] FIG. 9 is a plan view of a charge / collection disk having a charging electret and a charge collection terminal on its surface. [Figure 10] FIG. 10 is a graph showing the results of a two-dimensional finite difference simulation of the electrostatic force that the charge storage layer receives from when it is charged under a charging electret to when it reaches the next charging electret. [Figure 11] FIG. 11 is a graph showing the results of simulating the electrostatic force acting on the charge carrier when the thickness of the potential control layer (inner copper layer) is changed. [Figure 12] FIG. 12 is a graph showing the results of a simulation of the surface potential exhibited by the charge carrier while it is reaching the next charging electrode when the thickness of the potential control layer (inner copper layer) is changed. [Figure 13] FIG. 13 is a graph showing the results of a simulation of the surplus energy obtained while the charge carrier is reaching the next charging electrode when the thickness of the potential control layer (inner copper layer) is changed. [Figure 14] FIG. 14 is a graph showing the results of simulating the electrostatic force acting on the charge carrier when the width of the potential control layer (inner copper layer) is changed. [Figure 15] FIG. 15 is a graph showing the results of a simulation of the surplus energy obtained while the charge carrier reaches the next charging electrode when the width of the potential control layer (inner copper layer) is changed. [Figure 16] FIG. 16 is a graph showing the results of simulating the electrostatic force acting on the charge carrier when the distance between the charge retention layer (external copper layer) and the potential control layer (internal copper layer) is changed. [Figure 17] Figure 17 is a graph showing the results of a simulation of the excess energy obtained while the charge carrier is reaching the next charging electrode when the distance between the charge retention layer (outer copper layer) and the potential control layer (inner copper layer) is changed. [Figure 18] FIG. 18 is a graph showing the results of a simulation of the electrostatic force acting on the charge carrier when the thickness of the charge retention layer (outer copper layer) is changed. [Figure 19] FIG. 19 is a graph showing the results of a simulation of the excess energy obtained while the charge carrier is reaching the next charging electrode when the thickness of the charge storage layer (outer copper layer) is changed. [Figure 20] FIG. 20 is a graph showing the height of the right vertical end face and the results of a simulation of the electrostatic force acting on this face. [Figure 21]FIG. 21 is a graph showing the amount of charge collected on the right vertical end face for each height of the right vertical end face. [Figure 22] FIG. 22 is a graph showing the height of the right vertical end face and the ratio of the charges collected at the right vertical end face to the total amount of charges held by the charge retention layer. [Figure 23] FIG. 23 is an elevational view of a charge carrier in which the thickness of the charge storage layer is thin in the front half and thick in the rear half. [Figure 24] FIG. 24 is an elevational view of a charge carrier element in which the thickness of the charge storage layer is thinned all over and thickened only at the rearmost end. [Figure 25] FIG. 25 is an elevational view of the charge carrier body with the right vertical surface of the charge storage layer lowered vertically into the charge carrier body from the leading edge of the charge storage layer in the direction of travel. [Figure 26] FIG. 26 is a graph showing the results of a simulation of the electrostatic force acting on the charge carrier when the charge storage layer is extended perpendicularly to the tip of the charge storage layer. [Explanation of symbols]

[0041] 1: Point charge 2: Opposing flat ground electrodes 3: Charging potential source (charging electrode or charging electret) 31: Power supply for charging electrode 4: Charge carrier 41: Front vertical plate of the charge carrier 42: Upper and lower horizontal plates of the charge carrier (charge retention layer) 43: Potential control layer 44: Support resin layer 45:Charge retention layer protrusion 5: Charge recovery source (recovery electrode) 6: Capacitor for charge recovery electrode 7: Charge injection conductive terminal 8: Charge recovery conductive terminal 9: Charge carrier disk 10: Charging and recovery electrode disc 11: Asymmetrically shaped charged object 12: Load 14: 4 layer PCB 14-1:4 layer PCB front vertical board 14-2: Outer copper layer of 4-layer PCB 14-3: Inner copper layer of 4-layer PCB 14-4: Support resin layer of 4-layer PCB

Claims

1. A charge carrier for an electrostatic generator has a charge retention layer on the periphery that retains the transported charges, and a potential control layer inside that is parallel to the charge retention layer and has a width narrower than that of the charge retention layer, and both layers are supported by a dielectric.

2. 2. A method according to claim 1, wherein the rear end of the potential control layer and the rear end of the charge retention layer are aligned in the direction of travel of the charge carrier.

3. 2. A method according to claim 1, wherein the width of the potential control layer is 20% to 50% of the width of the charge retention layer.

4. In claim 1, when the charge retention layer is formed on a support disk having a radius of 50 mm, the distance between the charge retention layer and the potential control layer is 80 μm or more and 300 μm or less. When the shape or size of the support changes, the distance is adjusted accordingly.

5. In claim 1, when the charge retention layer is formed on a support disk having a radius of 50 mm, the thickness of the charge retention layer is 80 μm or more. When the shape or size of the support changes, the layer thickness is adjusted accordingly.

6. 2. In claim 1, when the charge retention layer is formed on a support disk having a radius of 50 mm, the thickness of the charge retention layer is 40 .mu.m or less in the first half and 80 .mu.m or more in the second half. When the shape or size of the support is changed, the layer thickness configuration should be adjusted accordingly.

7. 2. The method according to claim 1, wherein a charge retention layer perpendicular to the direction of travel of the charge carrier is added to the tip of the charge retention layer parallel to the direction of travel of the charge carrier.

8. 8. The method according to claim 7, wherein the support for the charge carrier is formed only inside the charge carrier.

9. According to claim 1, the distance between the charge retention layer parallel to the direction of movement of the charge carrier and the opposing charging or recovery electrode is minimized within the range permitted by mechanical precision.

10. In claims 1 and 7, the dielectric supporting the charge carrier has a small relative dielectric constant.

11. In claims 1 and 7, the dielectric supporting the charge carrier is an air layer or a vacuum layer, and the charge retention layer and the potential control layer are mechanically supported from the sides of the charge carrier.

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