Semiconductor chip oriented cleaning method
The semiconductor chip cleaning method uses fluid nozzles to penetrate deep into chip gaps, ensuring thorough and uniform cleaning, addressing inefficiencies and environmental concerns, and enhancing production efficiency and yield.
Patent Information
- Application Number
- JP2025077050
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-05-06
- Filing Date
- 2025-05-06
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2045-05-06
Smart Images

Figure 2025170225000001_ABST
Abstract
Description
[Technical Field]
[0001] The present invention relates to the field of semiconductor technology, and more particularly to a semiconductor chip-oriented cleaning method that is applied to a transport facility to perform cleaning operations on chips as they are transferred from one process to another. [Background technology]
[0002] Cleaning semiconductor chips is a crucial step in the microelectronics manufacturing process. As semiconductor technology advances, especially as the line width of integrated circuits (ICs) continues to shrink, the cleanliness requirements for chip surfaces become increasingly stringent. Even small amounts of contamination can cause chip performance degradation and product failure, so developing effective, reliable, and economical cleaning technologies is an important research topic in the semiconductor manufacturing industry.
[0003] Conventional wet cleaning methods use various chemical solvents and water to clean chips, which can remove a variety of impurities, but the large amounts of chemical solvents used are harmful to the environment, and the precision required for cleaning ultra-fine structures is insufficient to completely remove particles and contaminants, resulting in chip damage and reduced performance.
[0004] Dry cleaning (such as plasma cleaning) removes surface contaminants using plasma-generated active species, but while it has a small environmental impact, it can damage the chip surface, and its removal effect is limited if the contaminants are firmly attached.
[0005] Rotary cleaning uses centrifugal force to remove chemicals from the chip, but the cleaning effect is uneven depending on the chip position, and the centrifugal force is particularly weak near the center, resulting in insufficient cleaning. Furthermore, high-speed rotation is required for effective cleaning, which increases the chemical splash, lengthens cleaning time, and increases the cost of consumables. Summary of the Invention [Problem to be solved by the invention]
[0006] In light of the above, the present invention aims to provide a semiconductor chip-oriented cleaning method that penetrates deep into the gaps between chips to thoroughly clean them, improving cleaning effect and efficiency while shortening cleaning time and reducing environmental impact, thereby overcoming the limitations of prior art high-precision chip cleaning and providing a highly efficient and comprehensive cleaning solution for the semiconductor manufacturing industry. [Means for solving the problem]
[0007] To solve the above problems and achieve the object of the present invention, the technical solution of the present invention is as follows: A semiconductor chip-oriented cleaning method is used to clean objects transported by a jig on a conveyor belt. The jig has at least one clean area, and the objects include at least one substrate and at least one chip. The objects are placed in the clean area, with a gap between the chip and the substrate. The method includes the following steps: Step 1: At least two nozzles are set and aimed at chip gaps in the clean area. Step 2: The nozzles are synchronously moved along the chip arrangement direction to clean the gaps. Step 3: After cleaning the chip gaps, if there are no adjacent clean areas, the cleaning is terminated; if there are adjacent clean areas, the nozzles are synchronously moved to aim at chip gaps in the area. Step 4: Steps 2 and 3 are repeated until all chip gaps have been cleaned. The nozzles used in each of the above steps are fluid nozzles.
[0008] In the above technical means, the number of cleaning cycles in step 2 is either a single unidirectional cleaning cycle or multiple reciprocating cleaning cycles.
[0009] In the above technical means, the nozzle pressure is 5-125kgf / cm 2 Let's say.
[0010] In the above technical means, the nozzle is adjustable in inclination angle toward the gap, and the angle is set to 20 to 90 degrees.
[0011] In the above technical means, the nozzle is detachable to facilitate replacement or adjustment.
[0012] In the above-mentioned technical means, the chip is positioned on the substrate by flux. [Effects of the Invention]
[0013] The technical means of the present invention has the following advantages over the prior art: First, the present invention cleans chips as they are transferred between processes during semiconductor manufacturing, enabling precise and efficient cleaning of the narrow gaps between chips after cutting, improving production line efficiency and chip processing quality, shortening cleaning time, and reducing the use of chemical cleaning solutions, thereby reducing environmental impact.
[0014] Second, step 2 allows the nozzle to penetrate deep into each narrow gap in the chip, allowing the cleaning solution to reach every corner of the chip, thoroughly cleaning the gaps and reducing contaminant residue, thereby improving product yield.
[0015] Third, the use of fluid nozzles allows for uniform distribution of cleaning fluid, improving cleaning uniformity, penetration and quality, especially in narrow gaps, and reducing the risk of contaminant residue.
[0016] Fourth, the semiconductor chip-oriented cleaning method of the present invention reduces the amount of cleaning solution and other consumables used, thereby reducing waste and lowering costs.
[0017] Fifth, the semiconductor chip-oriented cleaning method of the present invention is applicable to chips of different sizes and types, and has high adaptability, making it widely applicable to various semiconductor manufacturing processes. [Brief explanation of the drawings]
[0018] [Figure 1] FIG. 2 is a diagram showing a local plane of the present invention. [Figure 2] FIG. 1 is a diagram showing a flow of the present invention. [Figure 3] FIG. 1 shows a single row of tips in a clean area according to the present invention. [Figure 4] 10A and 10B are diagrams illustrating the operation of single-row tip washing in the clean area according to the present invention. [Figure 5] 10A and 10B are diagrams illustrating the operation of single-row tip washing in the clean area according to the present invention. [Figure 6] 10A and 10B are diagrams illustrating the operation of multi-row chip washing in a clean area according to the present invention. [Figure 7] 10A to 10C are diagrams illustrating the operation of nozzle angle adjustment in the present invention. DETAILED DESCRIPTION OF THE INVENTION
[0019] The present invention will be described in more detail below in conjunction with specific embodiments and accompanying drawings.
[0020] As shown in Figures 1 to 5, the semiconductor chip-oriented cleaning method of the present invention is used to clean an object (30) to be cleaned that is transported by a jig (20) arranged on a conveyor belt (10). The jig (20) is provided with at least one clean area (60), and the object (30) to be cleaned includes at least one substrate (301) and at least one chip (302). The object (30) to be cleaned is arranged in the clean area (60), and a gap (303) is formed between the chip (302) and the substrate (301). The method includes the following steps:
[0021] Step 1 (1) sets up at least two nozzles (40) and aims them at the gaps (303) of the chips (302) in the clean area (60).
[0022] Step 2 (2): The nozzle (40) is moved synchronously along the direction of arrangement of the chips (302) to clean the gap (303). Step 3 (3): After the gaps (303) between the chips (302) have been cleaned, if there is no adjacent clean area (60), the cleaning is terminated. If there is an adjacent clean area (60), the nozzle (40) is moved synchronously to aim at the gaps (303) between the chips (302) within the adjacent clean area (60).
[0023] Step four (4), step two (2) and step three (3) are repeated until the gaps (303) of all the chips (302) have been cleaned.
[0024] The nozzle (40) used in each of the steps is a fluid nozzle.
[0025] Here, by performing step 2 (2), the nozzle (40) penetrates deep into all the narrow gaps (303) of the chip (302), and the cleaning solution reaches every corner of the chip (302), effectively cleaning the gaps (303). This improves the cleaning effect and thoroughly cleans the gaps (303), reducing the amount of residual contaminants and contributing to improved product yield.
[0026] Secondly, cleaning with the fluid nozzle (40) can distribute the cleaning fluid more evenly, especially in the narrow gap (303) of the tip (302), improving the uniformity, penetration and quality of cleaning and reducing the risk of contaminant residue.
[0027] Furthermore, by performing steps 1 (1) through 4 (4), the entire cleaning process can be completed in a short time, saving time and improving production efficiency. Furthermore, the high efficiency and precision of the cleaning process reduces the amount of cleaning fluid and other consumables used, reducing waste and costs.
[0028] In addition, the semiconductor chip-oriented cleaning method of the present invention can be applied to chips (302) of different sizes and types, and is highly adaptable and widely applicable to various semiconductor manufacturing processes.
[0029] Specifically, the cleaning process of the present invention is as follows: First, two nozzles 40 are set up and precisely aimed at the gaps 303 between the chips 302 in the clean area 60 to ensure that all gaps 303 are cleaned. Next, the nozzles 40 are synchronously moved along the direction of the chips 302 to uniformly and completely clean the gaps 303 and remove accumulated dust and contaminants. After cleaning the gaps 303 between the chips 302 in the clean area 60 is complete, the presence or absence of an adjacent clean area 60 is checked. If not, cleaning ends. If present, the nozzles 40 are synchronously moved to aim at the gaps 303 between the chips 302. Finally, steps 2 (2) and 3 (3) are repeated until the gaps 303 between the chips 302 in all clean areas 60 are completely cleaned.
[0030] As mentioned above, the pressure of the nozzle (40) is 5-125 kgf / cm 2 Within this pressure range, the nozzle (40) generates sufficient force to effectively clean small gaps and hard-to-reach areas.
[0031] Next, the pressure of the nozzle 40 can be adjusted according to the degree and type of contamination on the tip 302. Low pressure is used for light contamination, and high pressure is used for stubborn contamination, allowing for various degrees of contamination.
[0032] Furthermore, the pressure is increased to 125 kgf / cm 2 The following controls can be used to avoid the risk of excessive damage to the chip (302) during the cleaning process: Appropriate pressure ensures that the cleaning solution is evenly distributed throughout all gaps (303) of the chip (302), improving cleaning uniformity and penetration even in narrow or irregular spaces.
[0033] As mentioned above, the nozzle (40) is detachable, allowing for easy replacement and adjustment. This simplifies cleaning and maintenance of the nozzle (40), ensuring high-efficiency operation. Furthermore, in the event of a malfunction, only the nozzle (40) can be replaced, reducing maintenance costs and downtime. Furthermore, different types and sizes of nozzles (40) can be quickly replaced, flexibly responding to various cleaning needs and tip (302) sizes, shapes, and materials, ensuring optimal cleaning conditions at all times.
[0034] As mentioned above, the chip (302) is positioned on the substrate (301) by the flux (50). The use of the flux (50) improves the bonding strength between the chip (302) and the substrate (301) and ensures accurate positioning of the chip (302) during manufacturing, improving assembly precision. Furthermore, the flux (50) has excellent thermal conductivity, transferring heat evenly to each soldering area during heating, preventing solder defects due to uneven heat distribution. The chemical components of the flux (50) also react with and dissolve oxides on the surface of the chip (302), reducing residue and reducing the need for cleaning in subsequent processes, saving time and resources and improving production speed and efficiency.
[0035] As shown in Figures 4 and 5, the number of washes in step 2 (2) can be either a single unidirectional wash (see Figure 4) or multiple reciprocating washes (see Figure 5), which allows the optimal number of washes to be selected according to the type of contaminant and the specific needs of the chip (302), thereby reducing the risk of damage to the chip (302).
[0036] As shown in Figure 6, the present invention allows for simultaneous cleaning of multiple rows of chips (302) within the cleaning area (60). By moving two or more nozzles (40) along the direction of the arrangement of the multiple rows of chips (302), multiple chips can be cleaned simultaneously, improving cleaning efficiency.
[0037] As shown in Figure 7, the nozzle (40) can be adjusted to an angle (a) of 20 to 90 degrees toward the gap (303). By adjusting the angle of the nozzle (40), the coverage area of the cleaning solution can be expanded, allowing the contaminated area to be directly cleaned, improving cleaning efficiency, shortening cleaning time, and saving resources and costs.
[0038] The above examples are merely illustrative of the present invention and do not limit the scope of the present invention. All equivalent changes or modifications made based on the structures, features and principles described in the claims of the present invention are included in the claims of the present invention. [Explanation of symbols]
[0039] 1 Step 1 2 Step 2 3 Step Three 4 Step Four 10 Conveyor Belt 20 Jig 30 Items to be washed 301 Substrate 302 chips 303 Gap 40 nozzles 50 Flux 60 Clean Area a angle
Claims
1. A method for cleaning an object (30) conveyed by a jig (20) on a conveyor belt (10), comprising: The jig (20) has at least one clean area (60); The object to be cleaned (30) includes at least one substrate (301) and at least one chip (302); The object to be cleaned (30) is placed in the cleaning area (60), A gap (303) is formed between the chip (302) and the substrate (301), Step 1 (1) of setting at least two nozzles (40) and aiming each at the gap (303) of the tip (302) in the clean area (60); Step 2 (2) of synchronously moving the nozzle (40) along the arrangement direction of the chips (302) to clean the gap (303); Step 3 (3) after the cleaning of the gaps (303) between the chips (302) is completed, if there is no adjacent clean area (60), the cleaning is terminated, and if there is an adjacent clean area (60), the nozzles (40) are synchronously moved to aim at the gaps (303) between the chips (302) in the adjacent clean area (60); and step four (4) of repeating step two (2) and step three (3) until the gaps (303) of all the chips (302) are cleaned. A method for directional cleaning of semiconductor chips, characterized in that the nozzle (40) used in each of the steps is a fluid nozzle.
2. 2. The semiconductor chip directional cleaning method according to claim 1, wherein the number of cleaning steps in step two (2) is either a single unidirectional cleaning or multiple reciprocating cleanings.
3. The pressure of the nozzle (40) is 5-125 kgf / cm 2 2. The method of semiconductor chip-directional cleaning according to claim 1, wherein:
4. The nozzle (40) is adjustable in angle toward the gap (303); 4. The method for semiconductor chip directional cleaning according to claim 3, wherein the angle (a) of the nozzle (40) is between 20 and 90 degrees.
5. 5. The method of semiconductor chip directional cleaning according to claim 4, wherein the nozzle (40) is detachable and easy to replace or adjust.
6. 2. The method of semiconductor chip-oriented cleaning according to claim 1, wherein the chip (302) is positioned on the substrate (301) by a flux (50).
Citation Information
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