Bolometer array, and light detection method

Abstract

To provide a bolometer array capable of acquiring two or more images containing different information.SOLUTION: A bolometer array includes a plurality of bolometers and a substrate with the plurality of bolometers arranged thereon side by side. Each bolometer includes: a first electrode; a second electrode provided opposite the first electrode across an inter-electrode area; a carbon nanotube film connected to the first electrode and the second electrode; a light reception part covering at least a portion of a plane on which the first electrode, the second electrode and the carbon nanotube film are present; and a connection part extending from the light reception part to the carbon nanotube film. The plurality of bolometers include a first bolometer to perform photothermal conversion of a first wavelength contained in detection target light as absorption target wavelength at the light reception part, and a second bolometer whose wavelength band of photothermal conversion is different from that of the first bolometer.SELECTED DRAWING: Figure 28

Description

[Technical Field]

[0001] The present disclosure relates to a bolometer array and a method of light detection. [Background technology]

[0002] It is widely known that bolometers are used to detect infrared radiation. For example, Patent Document 1 discloses a bolometer having a bolometer film whose resistance changes with an increase in temperature, and a method for manufacturing the same. The bolometer film of the bolometer disclosed in Patent Document 1 is, for example, a carbon nanotube film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-25052 Summary of the Invention [Problem to be solved by the invention]

[0004] A sensor that captures infrared images, for example, includes a bolometer array with multiple bolometers. Infrared radiation includes several typical wavelength bands. Different wavelength bands provide different information. Therefore, by installing two or more cameras and equipping each camera with a bolometer array that detects a different wavelength band, two or more images containing different information can be captured. However, in such cases, parallax occurs between the two or more images. This makes the process of combining multiple images complicated.

[0005] An object of the present disclosure is to provide a bolometer array and a light detection method that solves the above-mentioned problems. [Means for solving the problem]

[0006] A bolometer array according to one embodiment of the present disclosure comprises a plurality of bolometers and a substrate on which the plurality of bolometers are arranged in a row, each of the bolometers comprising a first electrode, a second electrode sandwiching an inter-electrode region between the first electrode and the second electrode, a carbon nanotube film connected to the first electrode and the second electrode, a light receiving unit covering at least a portion of the surface on which the first electrode, the second electrode and the carbon nanotube film are arranged, and a connection unit extending from the light receiving unit to the carbon nanotube film, and the plurality of bolometers include a first bolometer that performs photothermal conversion in the light receiving unit using a first wavelength contained in light to be detected as an absorption target wavelength, and a second bolometer that has a wavelength band for photothermal conversion different from that of the first bolometer.

[0007] In one embodiment of the optical detection method of the present disclosure, a bolometer array includes a first bolometer and a second bolometer as bolometers, each bolometer including a first electrode, a second electrode sandwiching the first electrode across an inter-electrode region, a carbon nanotube film connected to the first electrode and the second electrode, a light receiving unit covering at least a portion of the surface on which the first electrode, the second electrode, and the carbon nanotube film are provided, and a connection unit extending from the light receiving unit to the carbon nanotube film, and the first bolometer and the second bolometer detect different wavelength bands of light to be detected. [Effects of the Invention]

[0008] According to the above aspect, it is possible to prevent parallax from occurring between two or more images. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic plan view illustrating an example of a bolometer array according to the present disclosure. [Figure 2] FIG. 1 is a schematic plan view illustrating an example of a bolometer array according to the present disclosure. [Figure 3] 3 is a schematic cross-sectional view showing an example of a first bolometer included in a bolometer array according to the present disclosure. FIG. [Figure 4]FIG. 2 is a schematic plan view including an inter-electrode region provided in a bolometer according to the present disclosure. [Figure 5] FIG. 10 is a schematic cross-sectional view of a light receiving section included in a bolometer according to the present disclosure. [Figure 6] 10 is a schematic cross-sectional view showing an example of a second bolometer included in the bolometer array according to the present disclosure. FIG. [Figure 7] 10 is a flowchart illustrating an example of a method for manufacturing a bolometer array according to the present disclosure. [Figure 8] FIG. 2 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S1 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 9] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S2 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 10] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S3 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 11] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S4 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 12] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S5 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 13] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S6 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 14] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S7 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 15] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S8 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 16] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S9 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 17] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S10 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 18] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S11 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 19] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S12 of the method for manufacturing a bolometer array according to the present disclosure. [Figure 20] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S13 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 21] FIG. 10 is a schematic cross-sectional view showing an example of a bolometer array in the middle of being manufactured in step S14 of the manufacturing method of the bolometer array according to the present disclosure. [Figure 22] 3 is a schematic cross-sectional view showing an example of a first bolometer included in a bolometer array according to the present disclosure. FIG. [Figure 23] 10 is a schematic cross-sectional view showing an example of a second bolometer included in the bolometer array according to the present disclosure. FIG. [Figure 24] 3 is a schematic cross-sectional view showing an example of a first bolometer included in a bolometer array according to the present disclosure. FIG. [Figure 25] 10 is a schematic cross-sectional view showing an example of a second bolometer included in the bolometer array according to the present disclosure. FIG. [Figure 26] 3 is a schematic cross-sectional view showing an example of a first bolometer included in a bolometer array according to the present disclosure. FIG. [Figure 27] 10 is a schematic cross-sectional view showing an example of a second bolometer included in the bolometer array according to the present disclosure. FIG. [Figure 28] 1 is a schematic cross-sectional view showing an example of a bolometer array according to the present disclosure. [Figure 29] 1 is a schematic cross-sectional view showing an example of a bolometer array according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] Various embodiments according to the present disclosure will be described below with reference to the drawings.

[0011] First Embodiment A first embodiment of a bolometer array and a light detection method according to the present disclosure will be described below.

[0012] (bolometer array) As shown in FIG. 1, the bolometer array 1 includes a plurality of bolometers 2 and a substrate 3 . The bolometer array 1 is a device for detecting infrared rays, and is applied to, for example, an uncooled infrared sensor. Each bolometer 2 is an element that serves as a pixel of the bolometer array 1 . For example, the wavelength band of the infrared light detected by the bolometer 2 may include 1 to 100 μm. Furthermore, for example, the wavelength band of the infrared light detected by the bolometer 2 may include the terahertz band.

[0013] A plurality of bolometers 2 are arranged in the plane of the substrate 3. For example, the substrate 3 may comprise an integrated readout circuit for reading out the change in electrical resistance from each bolometer 2 . The bolometer array 1 may also include a sealing member that seals the area where the plurality of bolometers 2 are placed so that the periphery of the plurality of bolometers 2 is kept in a vacuum.

[0014] In the present disclosure, the bolometers 2 are arranged along the first direction and the second direction. For example, the bolometers 2 are arranged at equal intervals in the first direction and the second direction. The first direction and the second direction are directions within a plane in which the plurality of bolometers 2 are arranged. The first direction and the second direction are orthogonal to each other. There is no particular limitation on the installation orientation of the bolometer 2. However, for convenience of explanation, the direction perpendicular to the first direction and the second direction is defined as the up-down direction.

[0015] The bolometer array 1 includes a first bolometer 4 and a second bolometer 5 as the bolometers 2 . The first bolometer 4 and the second bolometer 5 detect different wavelength bands contained in the light to be detected L. For example, the first bolometer 4 may have a detection band of 8 to 14 μm contained in the light to be detected L. For example, the second bolometer 5 may have a detection band of 3 to 8 μm contained in the light to be detected L.

[0016] In the present disclosure, different wavelength bands include, for example, wavelength bands to be detected that have different center wavelengths. However, in the present disclosure, different wavelength bands are not limited to a non-overlapping wavelength band detectable by the first bolometer 4 (detection band of the first bolometer 4) and a wavelength band detectable by the second bolometer 5 (detection band of the second bolometer 5). In other words, the wavelength band detectable by the first bolometer 4 and the wavelength band detectable by the second bolometer 5 may partially overlap. Furthermore, as long as the detectable wavelength bandwidths are different, one of the wavelength band detectable by the first bolometer 4 and the wavelength band detectable by the second bolometer 5 may include the entirety of the other.

[0017] Each bolometer 2 absorbs components included in the detection band out of the wavelength band included in the light to be detected L, converts them into heat, and outputs the temperature that changes with the heat as an electrical signal. In other words, each bolometer 2 is an element that performs photoelectric conversion. Of the wavelength band absorbed by the first bolometer 4, the wavelength that the first bolometer 4 primarily targets for absorption is referred to as a first wavelength λ1 in this disclosure. Furthermore, within the wavelength band absorbed by the second bolometer 5, the wavelength that the second bolometer 5 primarily targets for absorption is referred to as a second wavelength λ2 in this disclosure. However, the second bolometer 5 may be capable of absorbing a wide wavelength band, and may not be set to have a wavelength that is primarily targeted for absorption.

[0018] The lower limit of the element size of each bolometer 2 is determined by the size limit in the microfabrication process. Furthermore, the upper limit of the element size of each bolometer 2 is determined by the limit size required to maintain a hollow structure. The size of such a bolometer 2 in each of the first and second directions is, for example, 10 μm to 50 μm.

[0019] For example, as shown in FIG. 1, the first bolometers 4 and the second bolometers 5 may be arranged alternately in the first direction, and the first bolometers 4 and the second bolometers 5 may be arranged alternately in the second direction. Also, as shown in FIG. 2, the first bolometers 4 and the second bolometers 5 may be arranged alternately in the first direction, the first bolometers 4 may be arranged continuously in the second direction, and the second bolometers 5 may be arranged continuously in the second direction.

[0020] (1st bolometer) 3, the first bolometer 4 is disposed on a substrate 3. The first bolometer 4 includes a first electrode 10, a second electrode 11, a sensor portion 12, a wiring portion 13, a first reflective film 14, an insulating film 15, and a protective film 16.

[0021] (Configuration of the first electrode) The first electrode 10 is an electrode for passing a current between the first electrode 10 and the second electrode 11 via the sensor portion 12 . 4, the first electrode 10 may include a first base end 10a and a plurality of first extending portions 10b. When viewed from above, each of the plurality of first extending portions 10b extends from the first base end 10a. These first extending portions 10b are formed to be parallel to one another. FIG. 3 is a cross-sectional view of a portion where the first extending portion 10b is not provided. The first electrode 10 is made of a conductive material such as aluminum, copper, gold, or TiAlV.

[0022] The size of the first extending portion 10b may be any size within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance, and the number of the first extending portions 10b may be any number within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance. For example, the width of each of the first extending portions 10b is 0.2 μm to 20 μm, and preferably 0.2 μm to 1 μm. For example, the length of each of the first extending portions 10b is 20% to 99% of the element size of the first bolometer 4, and preferably 30% to 70%. For example, the number of the first extending portions 10b is 2 to 30, and preferably 5 to 15.

[0023] (Configuration of second electrode) The second electrode 11 is an electrode for passing a current between the second electrode 11 and the first electrode 10 via the sensor portion 12. 4, the second electrode 11 may include a second base end 11a and a plurality of second extending portions 11b. When viewed from above, each of the plurality of second extending portions 11b extends from the second base end 11a. These second extending portions 11b are formed so as to be parallel to one another. These second extending portions 11b are formed so as to be parallel to one another. FIG. 3 is a cross-sectional view of a portion where the second extending portion 11b is not provided. The second electrode 11 is made of a conductive material such as aluminum, copper, gold, or TiAlV.

[0024] The size of the second extending portion 11b may be any size within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance, and the number of the second extending portions 11b may be any number within an appropriate range from the viewpoint of both the feasibility of microfabrication and the effective reduction of resistance. For example, the width of each of the second extending portions 11b is 0.2 μm to 20 μm, and preferably 0.2 μm to 1 μm. For example, the length of each of the second extending portions 11b is 20% to 99% of the element size of the first bolometer 4, and preferably 30% to 70%. For example, the number of the second extending portions 11b is 2 to 30, and preferably 5 to 15.

[0025] (area between electrodes) 4, the first extension portion 10b of the first electrode 10 is disposed between the two second extension portions 11b of the second electrode 11. Furthermore, the second extension portion 11b of the second electrode 11 is disposed between the two first extension portions 10b of the first electrode 10. In other words, the first electrode 10 and the second electrode 11 have a structure in which the multiple first extension portions 10b and the multiple second extension portions 11b are interlocked as a whole. The first extending portion 10b is disposed with a gap between the second extending portion 11b and the second base end 11a. The second extending portion 11b is disposed with a gap between the first extending portion 10b and the first base end 10a. As a result, a meandering interelectrode region 17 is formed between the first electrode 10 and the second electrode 11 when viewed from above. In the present disclosure, the term "meandering" refers to a wavy shape, including extending in a wavy manner. For example, inter-electrode region 17 extends in the first direction, then bends from one side to the other in the first direction and then bends from the other side to one side in the first direction, and then extends in the second direction.

[0026] For example, the width of inter-electrode region 17 may be 500 nm or more and 3 μm or less. In the present disclosure, the "width of interelectrode region 17" refers to the length of interelectrode region 17 in the electrode opposing direction between first electrode 10 and second electrode 11.

[0027] (Sensor configuration) The sensor unit 12 receives infrared rays and detects an amount related to the intensity of the received infrared rays as a change in electrical resistance value. The sensor unit 12 has a function of converting the received infrared light into heat and changing the electrical resistance value between the first electrode 10 and the second electrode 11 in relation to the converted heat. The sensor section 12 includes a carbon nanotube film 12a, a light receiving section 12b, and a connecting section 12c.

[0028] (Structure of carbon nanotube film) The carbon nanotube film 12a functions as an electrical resistor whose electrical resistance value changes in relation to heat. Carbon nanotube film 12a is electrically connected to first electrode 10 and second electrode 11 in inter-electrode region 17. Carbon nanotube film 12a is electrically connected to first electrode 10 and second electrode 11 over the entire inter-electrode region 17 so as to extend along inter-electrode region 17. For example, the carbon nanotube film 12a may be filled over the entire inter-electrode region 17, thereby extending in a meandering shape in the inter-electrode region 17.

[0029] For example, the thickness of the carbon nanotube film 12a may be preferably 0.7 nm or more and 50 nm or less, more preferably 0.7 nm or more and 10 nm or less, and even more preferably 0.7 nm or more and 5 nm or less.

[0030] For example, the carbon nanotube film 12a may include single-walled carbon nanotubes.For example, the carbon nanotube film 12a may include semiconducting carbon nanotubes. For example, the carbon nanotube film 12a may preferably contain 80% or more semiconducting carbon nanotubes, more preferably 90% or more semiconducting carbon nanotubes, and even more preferably 95% or more. At 95% or more, further improved properties can be expected. On the other hand, in the range of 90% to less than 95%, improved properties can be expected while reducing process costs.

[0031] For example, the carbon nanotube film 12a may contain semiconducting carbon nanotubes extracted by an electric-field-induced layer formation (ELF) method. The carbon nanotube film 12a may contain semiconducting carbon nanotubes extracted by other methods, but preferably contains semiconducting carbon nanotubes extracted by the ELF method. In this case, for example, a nonionic surfactant may be used in the ELF method for extracting the semiconducting carbon nanotubes, from the viewpoint of preventing adverse effects on the electrical characteristics of the first bolometer 4.

[0032] For example, the length of one semiconducting carbon nanotube separated by the ELF method may be 10 nm to 1 μm.

[0033] For example, the semiconducting carbon nanotubes may be bundled in the carbon nanotube film 12a, and the length of the bundle may be about 100 nm to 10 μm.

[0034] For example, the carbon nanotube film 12a may include a carbon nanotube network film in which a plurality of carbon nanotubes are randomly oriented to form a network. In the present disclosure, the term "carbon nanotube network film" refers to a carbon nanotube film in which a plurality of carbon nanotubes are randomly oriented and form a network with each other.

[0035] (Configuration of the light receiving unit) The light receiving portion 12b is a portion above the first bolometer 4, separated from the carbon nanotube film 12a, and extending in a roof shape above the carbon nanotube film 12a. Light receiving portion 12b covers at least a part of the surface (one surface of substrate 3) on which first electrode 10, second electrode 11 and carbon nanotube film 12a are provided. For example, light receiving portion 12b may be formed to have a size that covers first electrode 10, second electrode 11, and carbon nanotube film 12a when viewed from above. Also, light receiving portion 12b may be formed to have a size that covers wiring portion 13 in addition to first electrode 10, second electrode 11, and carbon nanotube film 12a when viewed from above.

[0036] For example, the light receiving portion 12b is formed in a plate shape except for the portion where the connecting portion 12c is located. For example, the position of the light receiving section 12b in the vertical direction may be such that the distance from the first reflecting film 14 to the light receiving section 12b is one-fourth of the first wavelength λ1. 5, the light receiving unit 12b may include a metal layer 12b1 and two insulating layers 12b2 sandwiching the metal layer 12b1 in the vertical direction. In this case, for example, the distance from the first reflective film 14 to the light receiving unit 12b is preferably such that the distance from the upper surface 14a of the first reflective film 14 to the lower surface of the metal layer 12b1 is one-fourth of the first wavelength λ1. The light receiving portion 12b may also be made of a material such as silicon nitride or titanium nitride that has the function of converting received infrared light into heat. The position of the light receiving section 12b in the vertical direction may be such that the distance from the first reflecting film 14 to the light receiving section 12b is an integer multiple of 2 or more of one-fourth of the first wavelength λ1.

[0037] The outer peripheral shape of the light receiving portion 12b may be rectangular or square. The light receiving portion 12b may have a through hole 12b3 that penetrates in the vertical direction.

[0038] (Connection configuration) The connecting portion 12c extends from the light receiving portion 12b toward the carbon nanotube film 12a. The connecting portion 12c supports the light receiving portion 12b above the first electrode 10, the second electrode 11, and the carbon nanotube film 12a. The upper end of the connection portion 12c is thermally connected to the light receiving portion 12b. The lower end of connecting portion 12c is in contact with the surface of protective film 16, and is thereby thermally connected to carbon nanotube film 12a via protective film 16. Furthermore, connecting portion 12c may be further thermally connected to first electrode 10 and second electrode 11 via protective film 16. Specifically, the lower end of connection portion 12c may be in contact with a portion of the upper surface of protective film 16 that extends across the upper surface of carbon nanotube film 12a, the upper surface of first electrode 10, and the upper surface of second electrode 11.

[0039] For example, the connecting portion 12c may have an upper surface that is recessed downward from the light receiving portion 12b and a lower surface that protrudes downward relative to the upper surface, thereby extending recessed toward the carbon nanotube film 12a. For example, the connecting portion 12c may be integrally formed with the light receiving portion 12b using the same material.

[0040] (Wiring configuration) The wiring portion 13 includes a first contact portion 13a, a first wiring 13b, a second contact portion 13c, and a second wiring 13d. The wiring portion 13 supports the first electrode 10, the second electrode 11, and the sensor portion 12 in the air so that the first electrode 10, the second electrode 11, and the sensor portion 12 are spaced apart from the substrate 3. As shown in FIG. 3 , a cavity 18 is formed between the first electrode 10, the second electrode 11, and the sensor portion 12 and the substrate 3.

[0041] The first contact portion 13a, the first wiring 13b, and the first electrode 10 may be an integral thin film. Similarly, the second contact portion 13c, the second wiring 13d, and the second electrode 11 may be an integral thin film. The wiring portion 13 is made of a conductive material such as aluminum, copper, gold, or TiAlV.

[0042] First contact portion 13a is connected to pad 3a of substrate 3. First contact portion 13a is disposed below first electrode 10, second electrode 11, and carbon nanotube film 12a.

[0043] The first wiring 13b extends so as to connect the first electrode 10 and the first contact portion 13a. One end of the first wiring 13b is connected to the first base end 10a of the first electrode 10. The other end of the first wiring 13b is connected to the first contact portion 13a. The first wiring 13b is inclined upward from the other end to the one end.

[0044] Second contact portion 13c is connected to pad 3b of substrate 3. Second contact portion 13c is disposed below first electrode 10, second electrode 11, and carbon nanotube film 12a.

[0045] The second wiring 13d extends so as to connect the second electrode 11 and the second contact portion 13c. One end of the second wiring 13d is connected to the second base end 11a of the second electrode 11. The other end of the second wiring 13d is connected to the second contact portion 13c. The second wiring 13d is inclined upward from the other end to the one end.

[0046] (Configuration of the first reflective film) The first reflective film 14 is a thin film disposed between the substrate 3 and the insulating film 15, and is located below the cavity 18. The first reflective film 14 reflects the detection target light L, which has passed through the sensor unit 12 from above downward, from below upward. Specifically, the first reflective film 14 reflects the detection target light L that is incident on the upper surface 14a. The first reflective film 14 may be made of any material that can reflect the light L to be detected, and may be made of the same material as the pads 3a of the substrate 3, for example.

[0047] The first reflective film 14 is disposed parallel to a plane including the first direction and the second direction. The upper surface 14a of the first reflective film 14 is flat and is, for example, parallel to the light receiving portion 12b. The upper surface 14a of the first reflective film 14 may be located on the same plane as the upper surfaces of the pads 3a and 3b. The film thickness of the first reflective film 14 may be the same as that of the pads 3a and 3b of the substrate 3, for example.

[0048] (Insulating film composition) The insulating film 15 is formed to cover the upper surface of the substrate 3 . The insulating film 15 has openings that expose the pads 3a and 3b. The insulating film 15 is formed so as to cover the first reflective film 14 from above. However, the insulating film 15 may have an opening that exposes part or all of the first reflective film 14.

[0049] (Protective film composition) The protective film 16 covers the carbon nanotube film 12a, the first electrode 10, the second electrode 11, and the wiring portion 13 in an integrated manner. The protective film 16 is a thin film made of an insulating material such as silicon nitride, silicon oxide, or resin. Moreover, the protective film 16 may include a first lower protective film 16a and a second lower protective film 16b located below the carbon nanotube film 12a, the first electrode 10, the second electrode 11, and the wiring portion 13. Protective film 16 may include a lower protective film consisting of one layer below carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion 13. Moreover, the protective film 16 includes a first upper-layer protective film 16c and a second upper-layer protective film 16d located above the carbon nanotube film 12a, the first electrode 10, the second electrode 11, and the wiring portion 13. Protective film 16 may include an upper protective film consisting of one layer located above carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion 13.

[0050] The first lower protective film 16a is located below the second lower protective film 16b. A cavity 18 is located below the first lower protective film 16a. The lower surface of the first lower protective film 16a forms the ceiling of the cavity 18. Second lower protective film 16b is formed on first lower protective film 16a and is in contact with the lower surfaces of carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion 13.

[0051] First upper protective film 16c is located below second upper protective film 16d and is in contact with the top surfaces of carbon nanotube film 12a, first electrode 10, second electrode 11, and wiring portion 13. The second upper protective film 16d is formed on the first upper protective film 16c. The second upper protective film 16d is in contact with the lower part of the connection part 12c of the sensor part 12 from above.

[0052] (Second bolometer) As shown in FIG. 6, the second bolometer 5 includes a first electrode 10, a second electrode 11, a sensor portion 12, a wiring portion 13, an insulating film 15, and a protective film 16, similar to the first bolometer 4. Furthermore, compared to the first bolometer 4, the second bolometer 5 includes a second reflective film 20 instead of the first reflective film .

[0053] (Configuration of the second reflective film) The second reflective film 20 is a thin film disposed between the substrate 3 and the insulating film 15, and is located below the cavity . The second reflective film 20 reflects the detection target light L, which has passed through the sensor section 12 from above downward, from below upward. Specifically, the second reflective film 20 reflects the detection target light L that is incident on the upper surface 20a. The second reflective film 20 may be made of any material that can reflect the light L to be detected, and may be made of the same material as the pads 3a of the substrate 3, for example.

[0054] The second reflective film 20 is disposed parallel to a plane including the first direction and the second direction. The upper surface 20a of the second reflective film 20 is flat and is, for example, parallel to the light receiving portion 12b. The upper surface 20a of the second reflective film 20 may be located on the same plane as the upper surfaces of the pads 3a and 3b. The film thickness of the second reflective film 20 may be the same as that of the pads 3a and 3b of the substrate 3, for example.

[0055] As shown in FIG. 6, in the second bolometer 5, the position of the light receiving section 12b in the vertical direction may be such that the distance from the second reflective film 20 to the light receiving section 12b is one-fourth of the second wavelength λ2. For example, the distance from the second reflective film 20 to the light receiving section 12b is preferably such that the distance from the upper surface 20a of the second reflective film 20 to the lower surface of the metal layer 12b1 is one-fourth of the second wavelength λ2. The position of the light receiving section 12b in the vertical direction may be such that the distance from the second reflective film 20 to the light receiving section 12b is an integer multiple of 2 or more of one-fourth of the second wavelength λ2.

[0056] (Method of manufacturing a bolometer array) As shown in FIG. 7, the method for manufacturing the bolometer array 1 includes, for example, steps S1 to S14.

[0057] First, as shown in FIG. 8, the manufacturer prepares a substrate 3 having a metal layer that will become the pads 3a and 3b and a metal layer that will become the reflective film (first reflective film 14 or second reflective film 20), and the surface of which is covered with an insulating film 15 (step S1). The process shown in FIG. 8 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0058] 9, the manufacturer forms pads 3a and 3b on the substrate 3 (step S2). The manufacturer forms openings in parts of the insulating film 15 to expose the metal layer that will become the pads 3a and 3b. The process shown in FIG. 9 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0059] Following the execution of step S2, the manufacturer forms a first sacrificial layer 30 on the insulating film 15 (step S3), as shown in Fig. 10. The first sacrificial layer 30 is a layer that will be removed in a later process to form the cavity 18. The first sacrificial layer 30 is formed of, for example, organic polyimide. The thickness of the first sacrificial layer 30 may be determined depending on the distance from the reflective film to the light receiving section 12b. For example, in the region where the first bolometer 4 is formed, the thickness of the first sacrificial layer 30 may be determined so that the distance from the first reflective film 14 to the light receiving section 12b is one-fourth of the first wavelength λ1. Furthermore, in the region where the first bolometer 4 is formed, the thickness of the first sacrificial layer 30 may be determined so that the distance from the first reflective film 14 to the light receiving section 12b is an integer multiple of 1 / 4 of the first wavelength λ1, or greater than 2. Furthermore, in the region where the second bolometer 5 is formed, the thickness of the first sacrificial layer 30 may be determined so that the distance from the second reflective film 20 to the light receiving section 12b is one-fourth of the second wavelength λ2. In addition, in the region where the second bolometer 5 is formed, the thickness of the first sacrificial layer 30 may be determined so that the distance from the second reflective film 20 to the light receiving section 12b is an integer multiple of 1 / 4 of the second wavelength λ2, or greater than 2. Furthermore, the thickness of the first sacrificial layer 30 may be the same in the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0060] Following the execution of step S3, the manufacturer forms a first lower protective film 16a on the first sacrificial layer 30, as shown in FIG. 11 (step S4). The process shown in FIG. 11 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0061] Following the execution of step S4, the manufacturer forms a second lower protective film 16b on the first lower protective film 16a, as shown in FIG. 12 (step S5). The process shown in FIG. 12 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0062] Following the execution of step S5, the manufacturer forms openings (cell contacts) in the first lower protective film 16a and the second lower protective film 16b to expose the pads 3a and 3b, as shown in FIG. 13 (step S6). The process shown in FIG. 13 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0063] Following the execution of step S6, the manufacturer forms a metal film 31 (step S7), as shown in Fig. 14. The metal film 31 is a thin metal film for forming the first electrode 10, the second electrode 11, and the wiring portion 13. For example, the metal film 31 is formed of a conductive material such as copper, gold, or TiAlV. The process shown in FIG. 14 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0064] Following the execution of step S7, the manufacturer patterns the metal film 31 (step S8), as shown in Fig. 15. For example, as shown in Fig. 15, the portions indicated by the arrows are removed by patterning the metal film 31. The first electrode 10, the second electrode 11, and the wiring portion 13 are formed by patterning the metal film 31. For example, a meander-shaped inter-electrode region 17 is formed by patterning the metal film 31. The process shown in FIG. 15 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0065] Following the execution of step S8, the manufacturer deposits the carbon nanotube film 12a as shown in FIG. 16 (step S9). The carbon nanotube film 12 a is formed at least in the inter-electrode region 17 . The process shown in FIG. 16 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0066] Following the execution of step S9, the manufacturer forms a first upper protective film 16c as shown in FIG. 17 (step S10). The process shown in FIG. 17 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0067] Following the execution of step S10, the manufacturer forms a second upper protective film 16d as shown in FIG. 18 (step S11). The process shown in FIG. 18 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0068] Following the execution of step S11, the manufacturer forms a second sacrificial layer 32 on the second upper-layer protective film 16d (step S12), as shown in Fig. 19. The second sacrificial layer 32 is a layer that will be removed in a later process and serves to form a space between the second upper-layer protective film 16d and the light receiving section 12b. The second sacrificial layer 32 is formed of, for example, organic polyimide. The thickness of the second sacrificial layer 32 may be determined depending on the distance from the reflective film to the light receiving section 12b. For example, in the region where the first bolometer 4 is formed, the thickness of the second sacrificial layer 32 may be determined so that the distance from the first reflective film 14 to the light receiving section 12b is one-fourth of the first wavelength λ1. In addition, in the region where the first bolometer 4 is formed, the thickness of the second sacrificial layer 32 may be determined so that the distance from the first reflective film 14 to the light receiving section 12b is an integer multiple of 1 / 4 of the first wavelength λ1, or greater than 2. In the region where the second bolometer 5 is formed, the thickness of the second sacrificial layer 32 may be determined so that the distance from the second reflective film 20 to the light receiving section 12b is one-fourth of the second wavelength λ2. In addition, in the region where the second bolometer 5 is formed, the thickness of the second sacrificial layer 32 may be determined so that the distance from the second reflective film 20 to the light receiving section 12b is an integer multiple of 1 / 4 of the second wavelength λ2, or greater than 2. Furthermore, the thickness of the second sacrificial layer 32 may be the same in the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0069] Following the execution of step S12, the manufacturer forms the light receiving portion 12b and the connection portion 12c on the second sacrificial layer 32, as shown in FIG. 20 (step S13). The process shown in FIG. 20 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0070] Following the performance of step S13, the manufacturer removes the first sacrificial layer 30 and the second sacrificial layer 32 (step S14), as shown in Fig. 21. For example, the first sacrificial layer 30 and the second sacrificial layer 32 may be removed using oxygen plasma. By removing the first sacrificial layer 30 and the second sacrificial layer 32, the bolometer array 1 having the cavity 18 is produced. The process shown in FIG. 21 is the same for the region where the first bolometer 4 is formed and the region where the second bolometer 5 is formed.

[0071] (Bolometer array operation) The operation of the bolometer array 1 of this embodiment will be described. When light L to be detected is incident on the bolometer array 1, each of the first bolometer 4 and the second bolometer 5 converts the light L to be detected into heat at the light receiving portion 12b.

[0072] The first bolometer 4 has a first wavelength λ1 as a target wavelength, and absorbs it in the light-receiving unit 12b and converts it into heat. For example, when the distance from the first reflective film 14 to the light-receiving unit 12b is one-fourth of the first wavelength λ1, the first bolometer 4 has a structure that optically resonates with the first wavelength λ1. Therefore, the first bolometer 4 mainly absorbs the first wavelength λ1 and converts it into heat. Also, when the distance from the first reflective film 14 to the light-receiving unit 12b is an integer multiple of one-fourth of the first wavelength λ1, which is two or more, the first bolometer 4 has a structure that optically resonates with the first wavelength λ1.

[0073] The second bolometer 5 has the second wavelength λ2 as a target wavelength, and absorbs it in the light-receiving unit 12b and converts it into heat. For example, when the distance from the second reflective film 20 to the light-receiving unit 12b is one-fourth of the second wavelength λ2, the second bolometer 5 has a structure that optically resonates with the second wavelength λ2. Therefore, the second bolometer 5 mainly absorbs the second wavelength λ2 and converts it into heat. Also, when the distance from the second reflective film 20 to the light-receiving unit 12b is an integer multiple of one-fourth of the second wavelength λ2, which is two or more, the second bolometer 5 has a structure that optically resonates with the second wavelength λ2.

[0074] The heat generated in the light receiving portions 12b of the first bolometer 4 and the second bolometer 5 is transmitted through the connecting portions 12c and the protective film 16 to heat the carbon nanotube film 12a. When the carbon nanotube film 12a is heated, the electrical resistance value of the carbon nanotube film 12a changes. The first bolometer 4 and the second bolometer 5 electrically detect changes in the electrical resistance value of the carbon nanotube film 12a in the inter-electrode region 17 by passing a current between the first electrode 10 and the second electrode 11, and output the detection result.

[0075] The first bolometer 4 and the second bolometer 5 have different absorption wavelength bands (detection bands). Therefore, the image based on the detection result output from the first bolometer 4 and the detection result output from the second bolometer 5 contain different information. For example, by fusing these images, a new image containing the information of the two images can be generated.

[0076] In this way, in the light detection method using the bolometer array 1 of this embodiment, the first bolometer 4 and the second bolometer 5 detect different wavelength bands of the detection target light L.

[0077] (Action and effect) The bolometer array 1 of this embodiment includes a plurality of bolometers 2 and a substrate 3 on which the plurality of bolometers 2 are arranged side by side. Each bolometer 2 includes a first electrode 10, a second electrode 11, a carbon nanotube film 12a, a light-receiving portion 12b, and a connecting portion 12c. The second electrode 11 is disposed on either side of the first electrode 10, sandwiching an inter-electrode region 17 therebetween. The carbon nanotube film 12a is connected to the first electrode 10 and the second electrode 11. The light-receiving portion 12b covers at least a portion of the surface on which the first electrode 10, the second electrode 11, and the carbon nanotube film 12a are disposed. The connecting portion 12c extends from the light-receiving portion 12b to the carbon nanotube film 12a. The plurality of bolometers 2 includes a first bolometer 4 and a second bolometer 5. The first bolometer 4 performs photothermal conversion in the light-receiving portion 12b, using a first wavelength λ1 included in the detection target light L as a target absorption wavelength. The second bolometer 5 has a different wavelength band for photothermal conversion from the first bolometer 4 .

[0078] Furthermore, in the light detection method of this embodiment, the bolometer array 1 is used, and the first bolometer 4 and the second bolometer 5 detect different wavelength bands of the detection target light L.

[0079] The bolometer array 1 includes a first bolometer 4 and a second bolometer 5, which have different absorption target wavelengths, as the multiple bolometers 2. Therefore, the bolometer array 1 has two types of bolometers 2 arranged on the plane on which the bolometers 2 are arranged, and can acquire two types of images on the same plane. Specifically, the bolometer array 1 can image a medium wavelength band of, for example, 3 to 8 μm using the first bolometer 4, and can image a long wavelength band of, for example, 8 to 14 μm using the second bolometer 5. No parallax occurs between the image acquired by the first bolometer 4 and the image acquired by the second bolometer 5 because the first bolometer 4 and the second bolometer 5 are arranged in the same area. In other words, the bolometer array 1 of this embodiment and the light detection method of this embodiment can prevent parallax from occurring between the two images.

[0080] Another possible configuration is to arrange a plurality of bolometers that detect the same wavelength band, and place a movable bandpass filter in front of the bolometer array. Such a configuration with a movable bandpass filter can change the wavelength band detected by the bolometer array by positioning the bandpass filter in the optical path of the detection target light L. However, a configuration with a movable bandpass filter cannot detect different wavelength bands at the same time. In contrast, the bolometer array 1 includes a first bolometer 4 and a second bolometer 5 with different absorption target wavelengths as the multiple bolometers 2. Therefore, the bolometer array 1 can detect different wavelength bands at the same time and acquire images at the same time. The bolometer array 1 and the photodetection method of this embodiment do not require changing the time to acquire images, and therefore can acquire two types of images in a shorter time than a configuration with a movable bandpass filter. Therefore, by using the bolometer array 1, for example, a fused image can be acquired in a shorter time, improving responsiveness.

[0081] The first bolometer 4 also includes a first reflective film 14. The first reflective film 14 is located on the opposite side of the light receiving unit 12b with the carbon nanotube film 12a sandwiched therebetween. The first reflective film 14 also reflects the detection target light L. The distance from the first reflective film 14 to the light receiving unit 12b is one-fourth the first wavelength λ1.

[0082] In the bolometer array 1 and the photodetection method of this embodiment, the first bolometer 4 becomes the bolometer 2 that has the first wavelength λ1 as the target absorption wavelength. Therefore, the bolometer array 1 and the photodetection method of this embodiment can detect the first wavelength λ1. Furthermore, the bolometer array 1 and the photodetection method of this embodiment have a structure in which the first bolometer 4 optically resonates with the first wavelength λ1, which makes it possible to improve the absorptance of the first bolometer 4 with respect to the first wavelength λ1. The distance from the first reflective film 14 to the light receiving section 12b may be an integer multiple of 2 or more and a quarter of the first wavelength λ1.

[0083] The second bolometer 5 performs photothermal conversion in the light receiving section 12b using a second wavelength λ2, which is different from the first wavelength λ1 and is included in the light to be detected, as the absorption target wavelength. In the bolometer array 1 and the photodetection method of this embodiment, the second bolometer 5 serves as a bolometer 2 having the second wavelength λ2 as the target absorption wavelength. Therefore, the bolometer array 1 and the photodetection method of this embodiment can detect the second wavelength λ2, which is different from the first wavelength λ1.

[0084] The second bolometer 5 also includes a second reflective film 20. The second reflective film 20 is located on the opposite side of the light receiving unit 12b with the carbon nanotube film 12a sandwiched therebetween. The second reflective film 20 also reflects the detection target light L. The distance from the second reflective film 20 to the light receiving unit 12b is one-fourth the second wavelength λ2.

[0085] The bolometer array 1 and the photodetection method of this embodiment have a structure in which the second bolometer 5 optically resonates with respect to the second wavelength λ2, thereby improving the absorptance of the second bolometer 5 with respect to the second wavelength λ2. The distance from the second reflective film 20 to the light receiving section 12b may be an integer multiple of 2 or more, that is, one-fourth of the second wavelength λ2.

[0086] In addition, in the bolometer array 1, the bolometers 2 may be arranged in a first direction and a second direction perpendicular to the first direction, and the first bolometers 4 and the second bolometers 5 may be arranged alternately in the first direction, and the first bolometers 4 and the second bolometers 5 may be arranged alternately in the second direction. In such a bolometer array 1, the first bolometers 4 and the second bolometers are arranged alternately in both the first direction and the second direction. Therefore, the first bolometers 4 and the second bolometers 5 are arranged in a dispersed manner, and the deviation between the image acquired by the first bolometer 4 and the image acquired by the second bolometer 5 is minimized.

[0087] Alternatively, the bolometers 2 may be arranged in a first direction and a second direction perpendicular to the first direction, the first bolometers 4 and the second bolometers 5 may be arranged alternately in the first direction, the first bolometers 4 may be arranged continuously in the second direction, and the second bolometers 5 may be arranged continuously in the second direction. In such a bolometer array 1, the same type of bolometers 2 are arranged in the second direction. Therefore, when sequentially processing the output of each bolometer 2, the output of the same type of bolometers 2 can be processed continuously. This may reduce the processing load of the detection results of the bolometer array 1.

[0088] Second Embodiment A second embodiment of a bolometer array and a light detection method according to the present disclosure will be described below. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0089] As shown in FIG. 22, in this embodiment, the light receiving section 12b of the first bolometer 4 includes a first wavelength absorbing member . The first wavelength absorption member 40 is a member that absorbs the component of the detection target light L that includes the first wavelength λ1 and converts it into heat. For example, the first wavelength absorption member 40 may be formed on the insulating layer 12b2 shown in Fig. 5. The first wavelength absorption member 40 may also be formed on the metal layer 12b1 instead of the insulating layer 12b2. Also, for example, the first wavelength absorption member 40 may be formed below the insulating layer 12b2 shown in FIG. 5 in addition to being formed above the insulating layer 12b2 shown in FIG.

[0090] In addition, in this embodiment, the light receiving portion 12b of the second bolometer 5 includes a second wavelength absorbing member 41, as shown in FIG. The second wavelength absorption member 41 is a member that absorbs the component of the detection target light L that includes the second wavelength λ2 and converts it into heat. For example, the second wavelength absorption member 41 may be formed on the insulating layer 12b2 shown in Fig. 5. Furthermore, the second wavelength absorption member 41 may be formed on the metal layer 12b1 instead of the insulating layer 12b2. Furthermore, for example, the second wavelength absorption member 41 may be formed below the insulating layer 12b2 shown in FIG. 5 in addition to being formed above the insulating layer 12b2 shown in FIG.

[0091] In this embodiment, the first bolometer 4 includes the first wavelength absorption member 40. Therefore, the light receiving portion 12b of the first bolometer 4 has an improved absorption rate for the first wavelength λ1 compared to when the first bolometer 4 does not include the first wavelength absorption member 40. Therefore, the detection sensitivity of the first bolometer 4 in this embodiment is improved.

[0092] Furthermore, in this embodiment, the second bolometer 5 includes the second wavelength absorption member 41. Therefore, the light receiving section 12b of the second bolometer 5 has an improved absorption rate for the second wavelength λ2 compared to when the second bolometer 5 does not include the second wavelength absorption member 41. Therefore, the detection sensitivity of the second bolometer 5 in this embodiment is improved.

[0093] The first wavelength absorption member 40 and the second wavelength absorption member 41 can be, for example, a thin film member that utilizes plasmon absorption. Plasmon absorption is the action of metal particles absorbing light of a specific wavelength. For example, a thin film member that absorbs the first wavelength λ1 through the action of plasmon absorption can be used as the first wavelength absorption member 40. Furthermore, a thin film member that absorbs the second wavelength λ2 through the action of plasmon absorption can be used as the second wavelength absorption member 41. Furthermore, a thin film member whose absorption wavelength can be changed by controlling the structure of the patch antenna can be used as a thin film member that utilizes plasmon absorption. Furthermore, a metal matching film, whose absorption wavelength can be changed by changing the thickness of the metal thin film, can be used as a thin film member that utilizes plasmon absorption. Furthermore, a thin film member in which the absorption wavelength can be changed by graphene can be used as a thin film member that utilizes plasmon absorption. Furthermore, the first wavelength absorption member 40 and the second wavelength absorption member 41 may be formed by orienting carbon nanotubes and using an antenna that absorbs infrared rays by utilizing plasmon resonance.

[0094] (Variation) For example, if the absorptance of the first wavelength λ1 of the first wavelength absorption member 40 is high, the distance from the light receiving portion 12b of the first bolometer 4 to the first reflective film 14 may be changed from one-fourth of the first wavelength λ1. Furthermore, for example, if the absorptance of the first wavelength λ1 of the first wavelength absorption member 40 is high, the first bolometer 4 does not need to include the first reflective film 14. Furthermore, if the second wavelength absorption member 41 has a high absorptance of the second wavelength λ2, the distance from the light receiving portion 12b of the second bolometer 5 to the second reflective film 20 may be changed from one-fourth of the second wavelength λ2. Furthermore, for example, if the second wavelength absorption member 41 has a high absorptance of the second wavelength λ2, the second bolometer 5 does not need to include the second reflective film 20.

[0095] Furthermore, when the absorptance of the first wavelength λ1 of the first wavelength absorption member 40 is not high, the light receiving section 12b of the first bolometer 4 may include a first reflective layer 42 located below the first wavelength absorption member 40, as shown in FIG. The first reflective layer 42 reflects the detection target light L that has passed through the first wavelength absorption member 40 toward the first wavelength absorption member 40. By providing such a first reflective layer 42, the absorptance of the first wavelength absorption member 40 is further improved. Furthermore, when the first reflective layer 42 is provided, the distance from the light receiving portion 12b of the first bolometer 4 to the first reflective film 14 may be changed from one-fourth of the first wavelength λ1. Furthermore, when the first reflective layer 42 is provided, the first bolometer 4 does not need to include the first reflective film 14.

[0096] Furthermore, when the absorption rate of the second wavelength λ2 of the second wavelength absorption member 41 is not high, the light receiving section 12b of the second bolometer 5 may be provided with a second reflective layer 43 located below the second wavelength absorption member 41, as shown in FIG. The second reflective layer 43 reflects the detection target light L that has passed through the second wavelength absorption member 41 toward the second wavelength absorption member 41. By providing such a second reflective layer 43, the absorptance of the second wavelength absorption member 41 is further improved. Furthermore, when the second reflective layer 43 is provided, the distance from the light receiving portion 12b of the second bolometer 5 to the second reflective film 20 may be changed from one-fourth of the second wavelength λ2. Furthermore, when the second bolometer 5 includes the second reflective layer 43, the second bolometer 5 does not need to include the second reflective film 20.

[0097] <Third embodiment> A third embodiment of a bolometer array and a light detection method according to the present disclosure will be described below. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0098] As shown in FIG. 26, in this embodiment, the light receiving section 12b of the first bolometer 4 includes a photothermal conversion layer 50 and a first wavelength transmitting member 51. The photothermal conversion layer 50 is a layer that receives the light to be detected L and converts it into heat. That is, the photothermal conversion layer 50 absorbs components of a wavelength band including the first wavelength λ1 of the light to be detected L and converts them into heat. The photothermal conversion layer 50 is integrally connected to, for example, the connection portion 12c. The first wavelength transmitting member 51 is formed so as to cover at least a part of the light receiving surface 50a of the photothermal conversion layer 50. The first wavelength transmitting member 51 selectively transmits components of a wavelength band including the first wavelength λ1 of the light L to be detected, and reflects components that are not transmitted.

[0099] 27, the light receiving section 12b of the second bolometer 5 includes a photothermal conversion layer 52 and a second wavelength transmitting member 53. As shown in FIG. The photothermal conversion layer 52 is a layer that receives the light to be detected L and converts it into heat. That is, the photothermal conversion layer 52 absorbs components of a wavelength band including the second wavelength λ2 of the light to be detected L and converts them into heat. The photothermal conversion layer 52 is integrally connected to, for example, the connection portion 12c. The second wavelength transmitting member 53 is formed so as to cover at least a part of the light receiving surface 52 a of the photothermal conversion layer 52 . The second wavelength transmitting member 53 selectively transmits components of a wavelength band including the second wavelength λ2 of the light to be detected L, and reflects components that are not transmitted.

[0100] In this embodiment, the first bolometer 4 includes the first wavelength transmitting member 51. Therefore, the light receiving section 12b of the first bolometer 4 can suppress absorption of the second wavelength λ2 in the photothermal conversion layer 50 compared to when the light receiving section 12b does not include the first wavelength transmitting member 51. Therefore, in this embodiment, the first bolometer 4 can selectively detect the first wavelength λ1.

[0101] In this embodiment, the second bolometer 5 includes a second wavelength transparent member 53. Therefore, the light receiving section 12b of the second bolometer 5 can suppress absorption of the first wavelength λ1 in the photothermal conversion layer 50 compared to when the second bolometer 5 does not include the second wavelength transparent member 53. Therefore, in this embodiment, the second bolometer 5 can selectively detect the second wavelength λ2.

[0102] For example, when first wavelength λ1 is included in the medium wavelength band of 3 to 8 μm, first wavelength transmitting member 51 can be, for example, a thin film made of magnesium fluoride, a thin film made of aluminum oxide, or a metal matching film.

[0103] (Variation) For example, if the second wavelength λ2 is included in the long wavelength band of, for example, 8 to 14 μm, and the second bolometer 5 has high absorptance for the second wavelength λ2 and low absorptance for the first wavelength λ1 even without the second wavelength transmitting member 53, the second bolometer 5 does not need to be equipped with the second wavelength transmitting member 53.

[0104] <Fourth embodiment> A fourth embodiment of a bolometer array and a light detection method according to the present disclosure will now be described.

[0105] As shown in FIG. 28 , the bolometer array 100 of this embodiment includes a plurality of bolometers 101 and a substrate 102 on which the plurality of bolometers 101 are arranged side by side. Each bolometer 101 includes a first electrode 103, a second electrode 104, a carbon nanotube film 105, a light-receiving portion 106, and a connecting portion 107. The second electrode 104 is disposed on either side of the first electrode 103, sandwiching an inter-electrode region 108 therebetween. The carbon nanotube film 105 is connected to the first electrode 103 and the second electrode 104. The light-receiving portion 106 covers at least a portion of the surface on which the first electrode 103, the second electrode 104, and the carbon nanotube film 105 are disposed. The connecting portion 107 extends from the light-receiving portion 106 to the carbon nanotube film 105. The plurality of bolometers 101 includes a first bolometer 110 and a second bolometer 111. The first bolometer 110 performs photothermal conversion in the light receiving section 106 using a first wavelength λ1 included in the light L to be detected as the target absorption wavelength. The second bolometer 111 has a wavelength band that is different from that of the first bolometer 110 and that is subjected to photothermal conversion.

[0106] In the light detection method of this embodiment, a bolometer array 100 is used, and a first bolometer 110 and a second bolometer 111 detect different wavelength bands of light L to be detected.

[0107] The bolometer array 100 includes a first bolometer 110 and a second bolometer 111 having different absorption target wavelengths as the multiple bolometers 101. Therefore, the bolometer array 100 has two types of bolometers 101 arranged on a plane on which the bolometers are arranged, and can acquire two types of images on the same plane. No parallax occurs between the image acquired by the first bolometer 110 and the image acquired by the second bolometer 111 because the first bolometer 110 and the second bolometer 111 are arranged in the same area. In other words, the bolometer array 100 of this embodiment and the light detection method of this embodiment can prevent parallax from occurring between the two images.

[0108] Fifth Embodiment A fifth embodiment of a bolometer array and a light detection method according to the present disclosure will be described below.

[0109] As shown in FIG. 29, a first lens 201 and a second lens 202 are provided on a sealing member 200 that seals the bolometer array 100. The first lens 201 is a lens that guides the component of the detection target light L in a wavelength band that includes the first wavelength λ1 to the first bolometer 110. The second lens 202 is a lens that guides the component of the detection target light L in a wavelength band that includes the second wavelength λ2 to the second bolometer 111.

[0110] In this way, by providing the first lens 201 and the second lens 202 to the sealing member 200, the first bolometer 110 and the second bolometer 111 can detect different wavelength bands.

[0111] Although the embodiments of the present disclosure have been described above, these embodiments are provided as examples and are not intended to limit the scope of the present disclosure. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the present disclosure. Furthermore, each embodiment can be combined with other embodiments as appropriate.

[0112] Some or all of the above-described embodiments can be described as, but are not limited to, the following supplementary notes.

[0113] (Appendix 1) a plurality of bolometers; a substrate on which a plurality of the bolometers are arranged; Equipped with Each of the bolometers comprises: A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a carbon nanotube film connected to the first electrode and the second electrode; a light receiving portion that covers at least a part of a surface on which the first electrode, the second electrode, and the carbon nanotube film are provided; a connecting portion extending from the light receiving portion to the carbon nanotube film; Equipped with The plurality of bolometers include: a first bolometer that converts a first wavelength included in the light to be detected into a target wavelength for absorption by the light receiving unit; a second bolometer having a wavelength band for photothermal conversion different from that of the first bolometer; Including, Bolometer array.

[0114] (Appendix 2) The first bolometer is a first reflective film that is located on the opposite side of the light receiving unit with the carbon nanotube film sandwiched therebetween and that reflects the light to be detected; the distance from the first reflective film to the light receiving unit is one-fourth of the first wavelength; 1. A bolometer array as described in Appendix 1.

[0115] (Appendix 3) The light receiving portion of the first bolometer is a first wavelength absorbing member that absorbs a component of the detection target light that includes the first wavelength; 3. The bolometer array of claim 1 or 2.

[0116] (Appendix 4) The light receiving portion of the first bolometer is a first reflective layer that reflects the light to be detected that has passed through the first wavelength absorption member toward the first wavelength absorption member; bolometer array as described in Appendix 3.

[0117] (Appendix 5) The light receiving portion of the first bolometer is a photothermal conversion layer that performs photothermal conversion; a first wavelength transmitting member that is formed so as to cover at least a part of the light receiving surface of the photothermal conversion layer and that selectively transmits a component that includes the first wavelength; 3. The bolometer array of claim 1 or 2.

[0118] (Appendix 6) the second bolometer performs photothermal conversion in the light receiving unit using a second wavelength, which is different from the first wavelength and is included in the light to be detected, as an absorption target wavelength; 6. A bolometer array according to any one of appendices 1 to 5.

[0119] (Appendix 7) The second bolometer is a second reflective film that is located on the opposite side of the light receiving unit with the carbon nanotube film sandwiched therebetween and that reflects the light to be detected; the distance from the second reflective film to the light receiving unit is one-fourth of the second wavelength; 6. A bolometer array as described in Appendix 6.

[0120] (Appendix 8) The light receiving portion of the second bolometer is a second wavelength absorbing member that absorbs a component of the detection target light that includes the second wavelength; 8. The bolometer array of claim 6 or 7.

[0121] (Appendix 9) The light receiving portion of the second bolometer is a second reflective layer that reflects the light to be detected that has passed through the second wavelength absorption member toward the second wavelength absorption member; 10. The bolometer array of claim 8.

[0122] (Appendix 10) The light receiving portion of the second bolometer is a photothermal conversion layer that performs photothermal conversion; a second wavelength transmitting member that is formed so as to cover at least a part of the light receiving surface of the photothermal conversion layer and that selectively transmits a component that includes the second wavelength; 8. The bolometer array of claim 6 or 7.

[0123] (Appendix 11) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first bolometers and the second bolometers are alternately arranged in the first direction; the first bolometers and the second bolometers are arranged alternately in the second direction. 11. A bolometer array according to any one of appendices 1 to 10.

[0124] (Appendix 12) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first bolometers and the second bolometers are alternately arranged in the first direction; the first bolometers are arranged consecutively in the second direction, the second bolometers are arranged consecutively in the second direction; 11. A bolometer array according to any one of appendices 1 to 10.

[0125] (Appendix 13) the bolometer array includes a first bolometer and a second bolometer as bolometers; Each bolometer is A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a carbon nanotube film connected to the first electrode and the second electrode; a light receiving portion that covers at least a portion of a surface on which the first electrode, the second electrode, and the carbon nanotube film are provided; a connecting portion extending from the light receiving portion to the carbon nanotube film; Equipped with the first bolometer and the second bolometer detect different wavelength bands of light to be detected; Light detection methods.

[0126] (Appendix 14) the first bolometer converts light into heat in the light receiving unit using a first wavelength included in the light to be detected as an absorption target wavelength; the first bolometer is located on the opposite side of the light receiving unit with the carbon nanotube film interposed therebetween and includes a first reflecting film that reflects the light to be detected; the distance from the first reflective film to the light receiving unit is one-fourth of the first wavelength; 14. The optical detection method of claim 13.

[0127] (Appendix 15) the first bolometer converts light into heat in the light receiving unit using a first wavelength included in the light to be detected as an absorption target wavelength; the light receiving unit of the first bolometer includes a first wavelength absorbing member that absorbs a component of the detection target light that includes the first wavelength; 15. The optical detection method of claim 13 or 14.

[0128] (Appendix 16) The light receiving portion of the first bolometer is a first reflective layer that reflects the light to be detected that has passed through the first wavelength absorption member toward the first wavelength absorption member; 16. The optical detection method of claim 15.

[0129] (Appendix 17) the first bolometer converts light into heat in the light receiving unit using a first wavelength included in the light to be detected as an absorption target wavelength; The light receiving portion of the first bolometer is a photothermal conversion layer that performs photothermal conversion; a first wavelength transmitting member that is formed so as to cover at least a portion of the light receiving surface of the photothermal conversion layer and that selectively transmits a component that includes the first wavelength; Equipped with 15. The optical detection method of claim 13 or 14.

[0130] (Appendix 18) the first bolometer converts light into heat in the light receiving unit using a first wavelength included in the light to be detected as an absorption target wavelength; the second bolometer performs photothermal conversion in the light receiving unit using a second wavelength, which is different from the first wavelength and is included in the light to be detected, as an absorption target wavelength; 18. The light detection method according to any one of appendices 13 to 17.

[0131] (Appendix 19) The second bolometer is a second reflective film that is located on the opposite side of the light receiving unit with the carbon nanotube film sandwiched therebetween and that reflects the light to be detected; the distance from the second reflective film to the light receiving unit is one-fourth of the second wavelength; 19. The optical detection method of claim 18.

[0132] (Appendix 20) The light receiving portion of the second bolometer is a second wavelength absorbing member that absorbs a component of the detection target light that includes the second wavelength; 20. The optical detection method of claim 18 or 19.

[0133] (Appendix 21) The light receiving portion of the second bolometer is a second reflective layer that reflects the light to be detected that has passed through the second wavelength absorption member toward the second wavelength absorption member; 21. The optical detection method of claim 20.

[0134] (Appendix 22) The light receiving portion of the second bolometer is a photothermal conversion layer that performs photothermal conversion; a second wavelength transmitting member that is formed so as to cover at least a part of the light receiving surface of the photothermal conversion layer and that selectively transmits a component that includes the second wavelength; 20. The optical detection method of claim 18 or 19.

[0135] (Appendix 23) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first bolometers and the second bolometers are alternately arranged in the first direction; the first bolometers and the second bolometers are arranged alternately in the second direction. 23. The light detection method according to any one of Supplementary Notes 13 to 22.

[0136] (Appendix 24) the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first bolometers and the second bolometers are alternately arranged in the first direction; the first bolometers are arranged consecutively in the second direction, the second bolometers are arranged consecutively in the second direction; 23. The light detection method according to any one of Supplementary Notes 13 to 22. [Explanation of symbols]

[0137] 1 Bolometer array 2 Bolometer 3. Circuit Board 4. First Bolometer 5 Second bolometer 10 1st electrode 11 Second electrode 12 Sensor section 12a Carbon nanotube film 12b Light receiving part 12c connection 13 Wiring section 14 1st reflective film 15 insulating film 16 Protective film 17 Interelectrode area 18 Cavity 20 Second reflective film 30 First Sacrificial Layer 31 Metal Film 32 Second Sacrificial Layer 40 First wavelength absorbing member 41 Second wavelength absorbing member 42 1st reflective layer 43 Second reflective layer 50 Photothermal conversion layer 51 First wavelength transmitting member 52 Photothermal conversion layer 53 Second wavelength transmitting member 100 Bolometer Array 101 Bolometer 102 Circuit Board 103 1st electrode 104 2nd electrode 105 Carbon nanotube film 106 Light receiving section 107 Connection 108 Interelectrode area 110 First Bolometer 111 Second Bolometer L Light to be detected λ1 1st wavelength λ2 second wavelength

Claims

1. a plurality of bolometers; a substrate on which a plurality of the bolometers are arranged; Equipped with Each of the bolometers comprises: A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a carbon nanotube film connected to the first electrode and the second electrode; a light receiving portion that covers at least a part of a surface on which the first electrode, the second electrode, and the carbon nanotube film are provided; a connecting portion extending from the light receiving portion to the carbon nanotube film; Equipped with The plurality of bolometers a first bolometer that converts a first wavelength included in the light to be detected into heat at the light receiving unit, the first wavelength being a target wavelength for absorption; a second bolometer having a wavelength band for photothermal conversion different from that of the first bolometer; Including, Bolometer array.

2. The first bolometer is a first reflective film that is located on the opposite side of the light receiving unit with the carbon nanotube film sandwiched therebetween and that reflects the light to be detected; a distance from the first reflective film to the light receiving unit is a quarter of the first wavelength; 2. The bolometer array of claim 1.

3. The light receiving portion of the first bolometer is a first wavelength absorbing member that absorbs a component of the detection target light that includes the first wavelength; 3. The bolometer array according to claim 1 or 2.

4. The light receiving portion of the first bolometer is a photothermal conversion layer that performs photothermal conversion; a first wavelength transmitting member that is formed so as to cover at least a part of the light receiving surface of the photothermal conversion layer and that selectively transmits a component that includes the first wavelength; 3. The bolometer array according to claim 1 or 2.

5. the second bolometer performs photothermal conversion in the light receiving unit using a second wavelength, which is different from the first wavelength and is included in the detection target light, as an absorption target wavelength; 3. The bolometer array according to claim 1 or 2.

6. The second bolometer is a second reflective film that is located on the opposite side of the light receiving unit with the carbon nanotube film interposed therebetween and that reflects the light to be detected; a distance from the second reflective film to the light receiving unit is a quarter of the second wavelength; 6. The bolometer array of claim 5.

7. The light receiving portion of the second bolometer is a second wavelength absorbing member that absorbs a component of the detection target light that includes the second wavelength; 6. The bolometer array of claim 5.

8. The light receiving portion of the second bolometer is a photothermal conversion layer that performs photothermal conversion; a second wavelength transmitting member that is formed so as to cover at least a part of the light receiving surface of the photothermal conversion layer and that selectively transmits a component that includes the second wavelength; 6. The bolometer array of claim 5.

9. the bolometers are arranged in a first direction and a second direction perpendicular to the first direction, the first bolometers and the second bolometers are alternately arranged in the first direction; the first bolometers and the second bolometers are alternately arranged in the second direction.

3. The bolometer array according to claim 1 or 2.

10. the bolometer array includes a first bolometer and a second bolometer as bolometers; Each bolometer is A first electrode; a second electrode provided across an inter-electrode region from the first electrode; a carbon nanotube film connected to the first electrode and the second electrode; a light receiving portion that covers at least a part of a surface on which the first electrode, the second electrode, and the carbon nanotube film are provided; a connecting portion extending from the light receiving portion to the carbon nanotube film; Equipped with the first bolometer and the second bolometer detect different wavelength bands of light to be detected; Light detection methods.

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