Organic device and method for manufacturing organic device

Abstract

To stably reduce electric resistance of an upper side electrode.SOLUTION: An organic device 10 includes: a substrate 11; a lower side electrode including at least a first lower side electrode 20A and a second lower side electrode 20B which are located on the substrate; a first partition wall 60; an organic layer including at least a first organic layer 30A located on the first lower side electrode and a second organic layer 30B located on the second lower side electrode; an upper side electrode including a first upper side electrode 40A including a part located on the first organic layer and a second upper side electrode 40B including a part located on the second organic layer; a second partition wall 70 located on the first partition wall; and a suppression layer 50 which is located on the upper side electrode or the second partition wall on the organic layer, and contains a polycyclic aromatic compound. The first partition wall 60 or the second partition wall 70 includes a conductive layer 71, and the first upper side electrode and the second upper side electrode come in contact with the conductive layer 71.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] FIELD Embodiments of the present disclosure relate to organic devices and methods for manufacturing organic devices. [Background technology]

[0002] Organic devices such as organic electroluminescence (EL) display devices have been attracting attention. An element of an organic device includes a substrate, a lower electrode, an upper electrode, and an organic layer located between the lower electrode and the upper electrode.

[0003] Two methods are known for forming an organic layer on a lower electrode by vapor deposition: a first method and a second method. In the first method, a mask with a plurality of through-holes is used. Each of the through-holes overlaps the lower electrode in a planar view. Particles of an organic material are attached to the lower electrode, thereby forming an organic layer on the lower electrode. Then, an upper electrode is formed by, for example, vapor deposition. When the upper electrode is formed by vapor deposition without using a mask, the upper electrode extends continuously across two adjacent organic layers in a planar view.

[0004] In the second method, a vapor deposition method is performed without using a mask. In the second method, a partition wall is formed on a substrate, the partition wall being located between two adjacent lower electrodes in a planar view. The partition wall includes a first portion and a second portion located on the first portion and having a width greater than that of the first portion. Particles of an organic material are attached to the lower electrode, thereby forming an organic layer on the lower electrode. The two organic layers located on the two adjacent lower electrodes in a planar view are separated by the partition wall. Then, an upper electrode is formed, for example, by a vapor deposition method. The upper electrode is also separated by the partition wall. The separation of the upper electrode causes an increase in the electrical resistance of the upper electrode. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2022-96395 Summary of the Invention [Problem to be solved by the invention]

[0006] An embodiment of the present disclosure aims to stably reduce the electrical resistance of the upper electrode. [Means for solving the problem]

[0007] According to an embodiment of the present disclosure, an organic device may include: a substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition located between the first lower electrode and the second lower electrode in a planar view; an organic layer including at least a first organic layer located on the first lower electrode and a second organic layer located on the second lower electrode; an upper electrode including at least a first upper electrode including a portion located on the first organic layer and a second upper electrode including a portion located on the second organic layer; a second partition located between the first organic layer and the second organic layer in a planar view, the second partition including a first portion located on the first partition and a second portion located on the first portion and having a width greater than that of the first portion; and an inhibiting layer located on the upper electrode on the organic layer or on the second portion of the second partition, the inhibiting layer including a polycyclic aromatic compound. The first partition or the second partition may include a conductive layer. The first upper electrode and the second upper electrode may be in contact with the conductive layer. [Effects of the Invention]

[0008] According to an embodiment of the present disclosure, the electrical resistance of the upper electrode can be stably reduced. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view illustrating an example of an organic device. [Figure 2] FIG. 2 is a plan view illustrating an example of a plurality of elements of an organic device. [Figure 3] FIG. 2 is a cross-sectional view illustrating an example of a plurality of elements of an organic device. [Figure 4A]FIG. 2 is a cross-sectional view showing an example of the configuration of an element. [Figure 4B] FIG. 4B is a cross-sectional view showing a portion of the element shown in FIG. 4A. [Figure 5] FIG. 2 is a cross-sectional view showing an example of the configuration of an organic layer. [Figure 6] FIG. 10 is a cross-sectional view showing an example of the configuration of layers above a second partition wall. [Figure 7] 10A to 10C are diagrams showing steps for preparing a structure including a substrate, a lower electrode, and a first partition wall. [Figure 8] 10A to 10C are diagrams illustrating steps of forming a conductive layer and a first insulating layer. [Figure 9] 1A to 1C are diagrams illustrating a step of forming a resist layer. [Figure 10] 10A to 10C are diagrams illustrating a step of etching the first insulating layer. [Figure 11] 10A to 10C are diagrams illustrating a step of removing the resist layer. [Figure 12] 10A to 10C are diagrams illustrating a step of etching a conductive layer. [Figure 13] FIG. 2 is a diagram showing a step of forming a first organic layer. [Figure 14] 10A to 10C are diagrams illustrating a step of forming a first layer of a first upper electrode. [Figure 15] FIG. 10 is a diagram showing a step of forming a first suppression layer. [Figure 16] 10A to 10C are diagrams illustrating a step of forming a second layer of the first upper electrode. [Figure 17] FIG. 2 is a diagram showing a step of forming a first protective layer. [Figure 18] 1A to 1C are diagrams illustrating a step of forming a first resist layer. [Figure 19] 10A to 10C are diagrams illustrating a step of partially removing the first protective layer. [Figure 20] 10A and 10B are diagrams illustrating a step of partially removing the first upper electrode and the first suppression layer. [Figure 21] FIG. 10 is a diagram showing a step of partially removing the first organic layer. [Figure 22] FIG. 10 is a diagram showing a step of removing the first resist layer. [Figure 23] FIG. 10 is a diagram showing a step of forming a second organic layer. [Figure 24] 10A to 10C are diagrams illustrating steps of forming a second upper electrode and a second suppression layer. [Figure 25] FIG. 10 is a diagram showing a step of forming a second protective layer. [Figure 26] 10A to 10C are diagrams illustrating a step of forming a second resist layer. [Figure 27] 10A to 10C are diagrams illustrating a step of partially removing the second protective layer. [Figure 28] 10A and 10B are diagrams illustrating a step of partially removing the second upper electrode, the second suppression layer, and the second organic layer. [Figure 29] FIG. 10 is a diagram showing a step of removing the second resist layer. [Figure 30] FIG. 10 is a diagram showing a step of forming a third organic layer. [Figure 31] 10A to 10C are diagrams illustrating steps of forming a third upper electrode and a third suppression layer. [Figure 32] FIG. 10 is a diagram showing a step of forming a third protective layer. [Figure 33] 10A to 10C are diagrams illustrating a step of forming a third resist layer. [Figure 34] 10A to 10C are diagrams illustrating a step of partially removing the third protective layer. [Figure 35] 10A and 10B are diagrams illustrating a step of partially removing the third upper electrode, the third suppression layer, and the third organic layer. [Figure 36] FIG. 10 is a diagram showing a step of removing the third resist layer. [Figure 37] 1A to 1C are diagrams illustrating a step of forming a first resist layer. [Figure 38] FIG. 2 is a diagram showing a step of forming a first organic layer. [Figure 39] 10A to 10C are diagrams illustrating a step of forming a first layer of a first upper electrode. [Figure 40] FIG. 10 is a diagram showing a step of forming a first suppression layer. [Figure 41] 10A to 10C are diagrams illustrating a step of forming a second layer of the first upper electrode. [Figure 42] FIG. 2 is a diagram showing a step of forming a first protective layer. [Figure 43] FIG. 10 is a diagram showing a step of removing the first resist layer. [Figure 44] 10A to 10C are diagrams illustrating a step of forming a second resist layer. [Figure 45] 10A to 10C are diagrams illustrating steps for forming a second organic layer, a second upper electrode, a second inhibiting layer, and a second inhibiting layer. [Figure 46] FIG. 10 is a diagram showing a step of removing the second resist layer. [Figure 47] 10A to 10C are diagrams illustrating a step of forming a third resist layer. [Figure 48] 10A to 10C are diagrams illustrating steps for forming a third organic layer, a third upper electrode, a third inhibiting layer, and a third inhibiting layer. [Figure 49] FIG. 10 is a diagram showing a step of removing the third resist layer. [Figure 50A] FIG. 2 is a cross-sectional view showing an example of the configuration of an element. [Figure 50B] FIG. 50B is a cross-sectional view showing a portion of the element shown in FIG. 50A. [Figure 51A] FIG. 2 is a cross-sectional view showing an example of the configuration of an element. [Figure 51B] FIG. 51B is a cross-sectional view showing a portion of the element shown in FIG. 51A. [Figure 52] FIG. 2 is a cross-sectional view showing an example of the configuration of an element. [Figure 53] FIG. 2 is a cross-sectional view showing an example of the configuration of an element. [Figure 54] FIG. 2 is a cross-sectional view showing an example of the configuration of an element. [Figure 55] FIG. 2 is a diagram showing a step of forming a first organic layer. [Figure 56] FIG. 4 is a diagram showing a step of forming a first coating layer. [Figure 57] FIG. 10 is a diagram showing a step of forming a first suppression layer. [Figure 58] FIG. 10 is a diagram showing a step of removing the first coating layer. [Figure 59] 10A to 10C are diagrams illustrating a step of forming a first upper electrode. [Figure 60] FIG. 2 is a diagram showing a step of forming a first protective layer. [Figure 61] 1A to 1C are diagrams illustrating a step of forming a first resist layer. [Figure 62]10A to 10C are diagrams illustrating a step of partially removing the first protective layer. [Figure 63] 10A and 10B are diagrams illustrating a step of partially removing the first upper electrode and the first organic layer. [Figure 64] FIG. 10 is a diagram showing a step of removing the first resist layer. [Figure 65] FIG. 10 is a diagram showing a step of forming a second organic layer. [Figure 66] FIG. 10 is a diagram showing a step of forming a second coating layer. [Figure 67] FIG. 10 is a diagram showing a step of forming a second suppression layer. [Figure 68] FIG. 10 is a diagram showing a step of removing the second coating layer. [Figure 69] 10A to 10C are diagrams illustrating a step of forming a second upper electrode. [Figure 70] FIG. 10 is a diagram showing a step of forming a second protective layer. [Figure 71] 10A to 10C are diagrams illustrating a step of forming a second resist layer. [Figure 72] 10A to 10C are diagrams illustrating a step of partially removing the second protective layer. [Figure 73] FIG. 10 is a diagram showing a step of partially removing the second upper electrode and the second organic layer. [Figure 74] FIG. 10 is a diagram showing a step of removing the second resist layer. [Figure 75] FIG. 10 is a diagram showing a step of forming a third organic layer. [Figure 76] FIG. 10 is a diagram showing a step of forming a third coating layer. [Figure 77] FIG. 10 is a diagram showing a step of forming a third suppression layer. [Figure 78] FIG. 10 is a diagram showing a step of removing the third coating layer. [Figure 79] 10A to 10C are diagrams illustrating a step of forming a third upper electrode. [Figure 80] FIG. 10 is a diagram showing a step of forming a third protective layer. [Figure 81] 10A to 10C are diagrams illustrating a step of forming a third resist layer. [Figure 82] 10A to 10C are diagrams illustrating a step of partially removing the third protective layer. [Figure 83] 10A and 10B are diagrams illustrating a step of partially removing the third upper electrode and the third organic layer. [Figure 84] FIG. 10 is a diagram showing a step of removing the third resist layer. [Figure 85] FIG. 4 is a cross-sectional view showing an example of the configuration of a second partition wall. [Figure 86] 10A to 10C are diagrams illustrating a step of etching the first insulating layer. [Figure 87] 10A to 10C are diagrams illustrating a step of etching a conductive layer. [Figure 88] FIG. 4 is a cross-sectional view showing an example of the configuration of a second partition wall. [Figure 89] 5A to 5C are diagrams illustrating steps of forming a second insulating layer, a conductive layer, and a first insulating layer. [Figure 90] 1A to 1C are diagrams illustrating a step of forming a resist layer. [Figure 91] 10A to 10C are diagrams illustrating a step of etching the first insulating layer. [Figure 92] 10A to 10C are diagrams illustrating a step of etching a conductive layer. [Figure 93] 1A to 1C are diagrams illustrating a step of forming a resist layer. [Figure 94] 10A to 10C are diagrams illustrating a step of etching the second insulating layer. [Figure 95] 10A to 10C are diagrams illustrating a step of removing the resist layer. [Figure 96] FIG. 4 is a cross-sectional view showing an example of the configuration of a second partition wall. [Figure 97] 10A to 10C are diagrams illustrating a step of etching the first insulating layer. [Figure 98] 10A to 10C are diagrams illustrating a step of etching a conductive layer. [Figure 99] 10A to 10C are diagrams illustrating a step of etching the second insulating layer. [Figure 100] 10A to 10C are diagrams illustrating a step of removing the resist layer. [Figure 101] FIG. 3 is a cross-sectional view showing an example of the configuration of a first partition wall and a second partition wall. [Figure 102] FIG. 2 is a plan view illustrating an example of a plurality of elements of an organic device. DETAILED DESCRIPTION OF THE INVENTION

[0010] In this specification and drawings, unless otherwise specified, terms meaning the basic material of a certain configuration, such as "substrate," "base material," "sheet," and "film," are not distinguished from one another solely on the basis of differences in name.

[0011] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0012] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0013] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0014] Unless otherwise specified in the present specification and drawings, one embodiment of the present specification may be combined with other embodiments to the extent that no contradiction occurs. In addition, other embodiments may also be combined with each other to the extent that no contradiction occurs.

[0015] In the present specification and drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. The order of the disclosed steps is arbitrary within the range that does not cause a contradiction.

[0016] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values ​​before and after the symbol "to." For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

[0017] In one embodiment of the present specification, an example will be described in which an organic device including an organic layer is an organic EL display device that generates an image. However, the organic device is not limited to an organic EL display device. This embodiment is applicable to various organic devices. For example, this embodiment may be applied to an organic device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). For example, this embodiment may be applied to an organic device constituting a display device other than an organic EL display device. For example, this embodiment may be applied to an organic device other than a display device, such as a pressure sensor.

[0018] A first aspect of the present disclosure is an organic device, comprising: A substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition wall located between the first lower electrode and the second lower electrode in a plan view; an organic layer including at least a first organic layer located on the first lower electrode and a second organic layer located on the second lower electrode; an upper electrode including at least a first upper electrode including a portion located on the first organic layer and a second upper electrode including a portion located on the second organic layer; a second partition wall located between the first organic layer and the second organic layer in a plan view, the second partition wall including a first portion located on the first partition wall and a second portion located on the first portion and having a width greater than a width of the first portion; an inhibiting layer located on the upper electrode on the organic layer or on the second portion of the second partition wall, the inhibiting layer including a polycyclic aromatic compound; the first partition wall or the second partition wall includes a conductive layer; The first upper electrode and the second upper electrode are in contact with the conductive layer and are organic devices.

[0019] A second aspect of the present disclosure may include the following aspect in the organic device according to the first aspect described above: The first upper electrode may include a first layer including a portion located on the first organic layer, and a second layer including a portion in contact with the first layer and a portion in contact with the conductive layer, the suppression layer may include a first suppression layer located on the first layer of the first upper electrode, and the first suppression layer may include an end portion located more inward than an end portion of the first layer of the first upper electrode in a plan view.

[0020] A third aspect of the present disclosure may include the following aspect in the organic device according to the second aspect: The end of the first layer of the first upper electrode may be located outside an end of the first organic layer in a plan view.

[0021] A fourth aspect of the present disclosure may include the following aspect in the organic device according to the third aspect: The end of the first layer of the first upper electrode may be located on the first partition wall.

[0022] A fifth aspect of the present disclosure may be the organic device according to the second aspect described above, further comprising the following aspect: The end of the first layer of the first upper electrode may be located more inward than an end of the first organic layer in a plan view.

[0023] A sixth aspect of the present disclosure may be the organic device according to any one of the second to fifth aspects described above, further comprising: the second layer of the first upper electrode may be in contact with a side surface of the first portion of the second partition and a lower surface of the second portion.

[0024] A seventh aspect of the present disclosure may include the following aspect in the organic device according to the sixth aspect: The second layer of the first upper electrode may be continuous in the up-down direction from a lower surface of the second portion to the first layer.

[0025] An eighth aspect of the present disclosure may include the following aspect in the organic device according to the first aspect described above: The suppression layer may be located on the second portion of the second partition wall, and the first upper electrode may include a continuous layer including a portion in contact with the first organic layer and a portion in contact with the conductive layer.

[0026] A ninth aspect of the present disclosure may be the organic device according to any one of the first to eighth aspects described above, wherein the first portion of the second partition may include the conductive layer, and the second portion of the second partition may include a first insulating layer.

[0027] A tenth aspect of the present disclosure may be the organic device according to any one of the first to eighth aspects described above, further comprising: the second portion of the second partition wall may include a first insulating layer and the conductive layer located between the first insulating layer and the first portion, and the first portion of the second partition wall may include a second insulating layer.

[0028] An eleventh aspect of the present disclosure may be the organic device according to any one of the first to eighth aspects described above, further comprising: the second portion of the second partition may include a first insulating layer, and the first portion of the second partition may include the conductive layer and a second insulating layer located between the conductive layer and the first partition.

[0029] A twelfth aspect of the present disclosure may be the organic device according to any one of the first to eighth aspects described above, further comprising: the second portion of the second partition may include a first insulating layer, the first portion of the second partition may include a second insulating layer, and the first partition may include the conductive layer that partially constitutes an upper surface of the first partition.

[0030] A thirteenth aspect of the present disclosure may be the organic device according to any one of the first to twelfth aspects described above, further comprising the following: The inhibiting layer may include a biphenylyl moiety represented by any one of the following chemical structures (1-a), (1-b), and (1-c). [ka] The substituents Ra and Rb may each include deuterium, fluorine, alkyl including C1-C4 alkyl, cycloalkyl, arylalkyl, silyl, aryl, heteroaryl, or fluoroalkyl.

[0031] A fourteenth aspect of the present disclosure is a method for manufacturing an organic device, comprising: preparing a structure including: a substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition located between the first lower electrode and the second lower electrode in a plan view; and a second partition including a first portion located on the first partition and a second portion located on the first portion and having a width greater than a width of the first portion; a first organic layer forming step of forming a first organic layer on the first lower electrode and the second lower electrode; forming a first layer of a first upper electrode on the first organic layer; a first inhibiting layer forming step of forming a first inhibiting layer on the first layer on the first organic layer; forming a second layer of the first upper electrode by vapor deposition; a first organic layer removing step of removing the first organic layer on the second lower electrode, the first suppression layer is configured to prevent the second layer from adhering thereto; the first partition wall or the second partition wall includes a conductive layer; In the method for manufacturing an organic device, the second layer of the first upper electrode includes a portion in contact with the first layer and a portion in contact with the conductive layer.

[0032] A fifteenth aspect of the present disclosure may include the following aspect in the method for manufacturing an organic device according to the fourteenth aspect described above: The method for manufacturing an organic device may include a second organic layer forming step of forming a second organic layer on the second lower electrode, a first layer of a second upper electrode on the second organic layer, a second suppression layer forming step of forming a second suppression layer on the first layer on the second organic layer, and a second layer of the second upper electrode by vapor deposition, wherein the second layer of the second upper electrode may include a portion in contact with the first layer of the second upper electrode and a portion in contact with the conductive layer.

[0033] A sixteenth aspect of the present disclosure is a method for manufacturing an organic device, comprising: preparing a structure including: a substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition located between the first lower electrode and the second lower electrode in a plan view; and a second partition including a first portion located on the first partition and a second portion located on the first portion and having a width greater than a width of the first portion; a first resist forming step of forming a first resist that covers the second lower electrode; a first organic layer forming step of forming a first organic layer on the first lower electrode; forming a first layer of a first upper electrode on the first organic layer; a first inhibiting layer forming step of forming a first inhibiting layer on the first layer on the first organic layer; forming a second layer of the first upper electrode by vapor deposition; a first resist removal step of removing the first resist, the first suppression layer is configured to prevent the second layer from adhering thereto; the first partition wall or the second partition wall includes a conductive layer; In the method for manufacturing an organic device, the second layer of the first upper electrode includes a portion in contact with the first layer and a portion in contact with the conductive layer.

[0034] A seventeenth aspect of the present disclosure may include the following aspect in the method for manufacturing an organic device according to the sixteenth aspect described above. The method for manufacturing an organic device may include a second resist forming step of forming a second resist on an upper side of the first lower electrode, a second organic layer forming step of forming a second organic layer on the second lower electrode, a first layer of the second upper electrode on the second organic layer, a second suppressing layer forming step of forming a second suppressing layer on the first layer on the second organic layer, a second layer of the second upper electrode by vapor deposition, and a second resist removing step of removing the second resist. The second layer of the second upper electrode may include a portion in contact with the first layer of the second upper electrode and a portion in contact with the conductive layer.

[0035] An eighteenth aspect of the present disclosure is a method for manufacturing an organic device, comprising: preparing a structure including: a substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition located between the first lower electrode and the second lower electrode in a plan view; and a second partition including a first portion located on the first partition and a second portion located on the first portion and having a width greater than a width of the first portion; a first organic layer forming step of forming a first organic layer on the first lower electrode and the second lower electrode; a first suppression layer forming step of forming a first suppression layer on the second portion of the second partition wall; forming a first upper electrode by vapor deposition; a first organic layer removing step of removing the first organic layer on the second lower electrode; the first suppression layer is configured to prevent adhesion of the first upper electrode; the first partition wall or the second partition wall includes a conductive layer; The method for manufacturing an organic device includes the step of: forming a first upper electrode having a continuous layer including a portion in contact with the first organic layer and a portion in contact with a conductive layer.

[0036] A 19th aspect of the present disclosure may include the following aspect in the method for manufacturing an organic device according to the 18th aspect described above. The method for manufacturing an organic device may include a second organic layer forming step of forming a second organic layer on the second lower electrode, a second suppression layer forming step of forming a second suppression layer on the second portion of the second partition wall, and a step of forming a second upper electrode by vapor deposition. The second suppression layer may be configured to prevent the second upper electrode from adhering to the second suppression layer. The second upper electrode may include a continuous layer including a portion in contact with the second organic layer and a portion in contact with a conductive layer.

[0037] An embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiment described below is an example of an embodiment of the present disclosure. The present disclosure is not to be construed as being limited to only the embodiment described below.

[0038] 1 is a plan view showing an example of an organic device 10. In the plan view, the organic device 10 is observed along the normal direction of the substrate of the organic device 10. In the following description, viewing an object along the normal direction of the surface of a base member such as a substrate is also referred to as planar view.

[0039] The organic device 10 includes a substrate and a plurality of elements 15 arranged along the in-plane direction of the substrate. The elements 15 are, for example, pixels.

[0040] 2 is a plan view showing an example of a plurality of elements 15. The plurality of elements 15 may be arranged along two different directions. For example, the plurality of elements 15 may be arranged along a first direction D1 and a second direction D2. The second direction D2 intersects with the first direction D1. The second direction D2 may be perpendicular to the first direction D1.

[0041] The multiple elements 15 may include different types of elements. For example, the multiple elements 15 may include a plurality of first elements 15A and a plurality of second elements 15B. The multiple elements 15 may include a plurality of first elements 15A, a plurality of second elements 15B, and a plurality of third elements 15C. The first elements 15A are, for example, red pixels that generate red light. The second elements 15B are, for example, green pixels that generate green light. The third elements 15C are, for example, blue pixels that generate blue light.

[0042] At least two of the first element 15A, the second element 15B, and the third element 15C may be aligned in one direction. For example, the first element 15A, the second element 15B, and the third element 15C may be aligned in the first direction D1.

[0043] The multiple first elements 15A may be aligned in the second direction D2. The multiple second elements 15B may be aligned in the second direction D2. The multiple third elements 15C may be aligned in the second direction D2.

[0044] When describing the configuration common to the first element 15A, the second element 15B, and the third element 15C, the term and reference numeral "element 15" will be used.

[0045] The organic device 10 may include a plurality of first partitions 60 located between two adjacent elements 15 in a plan view. The first partitions 60 may include a plurality of eleventh partitions 61 and a plurality of twelfth partitions 62.

[0046] The eleventh partition 61 may be located between two elements 15 of different types that are adjacent in a plan view. For example, the eleventh partition 61 may be located between the first element 15A and the second element 15B, between the second element 15B and the third element 15C, or between the third element 15C and the first element 15A. As shown in FIG. 2, each of the multiple eleventh partitions 61 may extend in the second direction D2.

[0047] The twelfth partition 62 may be located between two elements 15 of the same type that are adjacent in a plan view. For example, the twelfth partition 62 may be located between two first elements 15A, between two second elements 15B, or between two third elements 15C. As shown in FIG. 2, each of the multiple twelfth partitions 62 may extend in the first direction D1.

[0048] The organic device 10 may include a plurality of second partitions 70 located on the first partition 60. The second partitions 70 may be located between two elements 15 of different types that are adjacent in a plan view. For example, the second partition 70 may be located between the first element 15A and the second element 15B, between the second element 15B and the third element 15C, or between the third element 15C and the first element 15A. For example, the second partition 70 may be located on the eleventh partition 61. As shown in FIG. 2, each of the plurality of second partitions 70 may extend in the second direction D2.

[0049] 3 is a cross-sectional view showing an example of a plurality of elements 15 of an organic device 10. The organic device 10 may include a substrate 11, a plurality of elements 15, a plurality of first partitions 60, and a plurality of second partitions 70. The substrate 11 includes a first surface 111 and a second surface 112. The second surface 112 is located on the opposite side of the first surface 111 in the normal direction of the first surface 111. The normal direction of the first surface 111 is also referred to as the up-down direction D3. The plurality of elements 15 may be located on the first surface 111.

[0050] Each of the plurality of elements 15 may include a lower electrode 20, an organic layer 30, an upper electrode 40, an inhibiting layer 50, and a protective layer 55. Each of the plurality of lower electrodes 20 may be located on the first surface 111. Each of the plurality of lower electrodes 20 may be in contact with the first surface 111. Each of the plurality of lower electrodes 20 may be in contact with an insulating layer (not shown) located on the first surface 111. Each of the plurality of organic layers 30 may be located on the lower electrode 20. Each of the plurality of upper electrodes 40 may include a portion located on the organic layer 30.

[0051] The element 15 can achieve some function by applying a voltage between the lower electrode 20 and the upper electrode 40 or by causing a current to flow between the lower electrode 20 and the upper electrode 40 .

[0052] The organic device 10 may be an active matrix type. For example, although not shown, the organic device 10 may include a switch electrically connected to each of the multiple elements 15. The switch is, for example, a transistor. The switch can control the ON / OFF of a voltage applied to the element 15 or a current flowing through the element 15.

[0053] Each of the multiple suppression layers 50 may be located on the upper electrode 40. Each of the multiple protective layers 55 may constitute the upper surface of the element 15. In this application, the "upper surface" is the surface located opposite the "lower surface" in the vertical direction D3. In this application, the "lower surface" is the surface facing the substrate 11 in the vertical direction D3. The protective layer 55 may cover the upper electrode 40, the suppression layer 50, etc.

[0054] The components of organic device 10 will now be described in detail.

[0055] (substrate) The substrate 11 may be an insulating plate member. The substrate 11 may be transparent so as to transmit light. The material of the substrate 11 may be a rigid material with little flexibility, or a flexible material with flexibility. Examples of rigid materials include quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plate. Examples of flexible materials include a resin film, an optical resin plate, and thin glass. The substrate 11 may be a laminate including a resin film and a barrier layer.

[0056] (lower electrode) The plurality of lower electrodes 20 may be distinguished according to the type of element 15. For example, the plurality of lower electrodes 20 may include a plurality of first lower electrodes 20A and a plurality of second lower electrodes 20B. For example, the plurality of lower electrodes 20 may include a plurality of first lower electrodes 20A, a plurality of second lower electrodes 20B, and a plurality of third lower electrodes 20C. The first lower electrode 20A is the lower electrode 20 included in the first element 15A. The second lower electrode 20B is the lower electrode 20 included in the second element 15B. The third lower electrode 20C is the lower electrode 20 included in the third element 15C.

[0057] When describing a configuration common to the first lower electrode 20A, the second lower electrode 20B, and the third lower electrode 20C, the term "lower electrode 20" and reference numerals will be used.

[0058] The lower electrode 20 includes a conductive material. The first electrode 120 includes, for example, a metal, a conductive metal oxide, a conductive inorganic material, etc. The lower electrode 20 may include a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0059] FIG. 4A is a cross-sectional view showing an example of the configuration of an element 15. FIG. 4B is a cross-sectional view showing a portion of the element 15 shown in FIG. 4A. Each of the multiple lower electrodes 20 includes an end portion 20e. The end portion 20e is the outer contour of the lower electrode 20 in a planar view. In this application, "outside" means a direction away from the center point of the element 15 in a planar view. In this application, "inside" means a direction toward the center point of the element 15 in a planar view. The center point of the element 15 is the center of gravity of the region of the element 15 in a planar view. The region of the element 15 is a region where the lower electrode 20, the organic layer 30, and the upper electrode 40 overlap with each other in a planar view, but do not overlap with the first partition 60.

[0060] (1st bulkhead) Each of the multiple first partitions 60 is located between two adjacent elements 15 in a planar view. In a planar view, the first partitions 60 are located between the first lower electrode 20A and the second lower electrode 20B, between the second lower electrode 20B and the third lower electrode 20C, between the third lower electrode 20C and the first lower electrode 20A, between two first lower electrodes 20A, between two second lower electrodes 20B, between two third lower electrodes 20C, etc. As shown in FIG. 4 , the first partitions 60 may overlap an end 20e of the lower electrode 20 in a planar view.

[0061] The first partition wall 60 may include an insulating material. For example, the first partition wall 60 may include a resin. An example of the resin is polyimide. The first partition wall 60 may include an inorganic compound such as an inorganic oxide or an inorganic nitride. An example of the inorganic oxide is silicon oxide. An example of the inorganic nitride is silicon nitride.

[0062] The first partition 60 includes an upper surface 601. The upper surface 601 of the first partition 60 may be located higher than the upper surface 301 of the organic layer 30 located on the lower electrode 20. In other words, the distance between the upper surface 601 of the first partition 60 and the first surface 111 of the substrate 11 in the vertical direction D3 may be greater than the distance between the upper surface 301 of the organic layer 30 located on the lower electrode 20 and the first surface 111 in the vertical direction D3. A thickness T2 of the first partition 60 may be greater than a thickness T1 of the organic layer 30 located on the lower electrode 20. The thickness T2 of the first partition 60 is measured at a midpoint between the centers of two organic layers 30 of two adjacent elements 15 in a plan view.

[0063] The dimensions such as thickness and width of each component of the organic device 10 are measured by observing an image of the cross section of the organic device 10 using a scanning electron microscope.

[0064] (organic layer) The plurality of organic layers 30 may include a plurality of first organic layers 30A and a plurality of second organic layers 30B. The plurality of organic layers 30 may include a plurality of first organic layers 30A, a plurality of second organic layers 30B, and a plurality of third organic layers 30C. The first organic layer 30A is the organic layer 30 included in the first element 15A. The second organic layer 30B is the organic layer 30 included in the second element 15B. The third organic layer 30C is the organic layer 30 included in the third element 15C. When the element 15 is a pixel, the first organic layer 30A may include a red light-emitting layer, the second organic layer 30B may include a green light-emitting layer, and the third organic layer 30C may include a blue light-emitting layer.

[0065] When describing a configuration common to the first organic layer 30A, the second organic layer 30B, and the third organic layer 30C, the term and symbol "organic layer 30" will be used.

[0066] The organic layer 30 includes an organic material. When a current is applied to the organic layer 30, the organic layer 30 can perform some function. Applying a current means that a voltage is applied to the organic layer 30 or that a current flows through the organic layer 30. The organic layer 30 may be, for example, a light-emitting layer that emits light when a current is applied. The organic layer 30 may include an organic semiconductor material. The properties of the organic layer 30, such as the transmittance and refractive index, may be adjusted as appropriate.

[0067] Each of the organic layers 30 including portions located on the plurality of lower electrodes 20 includes an end portion 30e. The end portion 30e is the outer contour of the organic layer 30 in a plan view. As shown in FIGS. 4A and 4B , the end portion 30e of the organic layer 30 may be located on the first partition wall 60. For example, the end portion 30e of the organic layer 30 may be located on the upper surface 601 of the first partition wall 60.

[0068] The portion of the organic layer 30 located on the lower electrode 20 has a thickness T1. The thickness T1 is measured at the center point of the portion of the organic layer 30 located on the lower electrode 20 and not overlapping with the first partition wall 60 in a plan view.

[0069] The organic layer 30 may include layers other than the light-emitting layer. FIG. 5 is a cross-sectional view showing an example of the layer configuration of the organic layer 30. The organic layer 30 may include a first functional layer 31, a light-emitting layer 33, and a second functional layer 32. For example, the first organic layer 30A may include an eleventh functional layer 31A, a first light-emitting layer 33A, and a twenty-first functional layer 32A. For example, the second organic layer 30B may include a twelfth functional layer 31B, a second light-emitting layer 33B, and a twenty-second functional layer 32B. For example, the third organic layer 30C may include a thirteenth functional layer 31C, a third light-emitting layer 33C, and a twenty-third functional layer 32C.

[0070] When describing the configuration common to the 11th functional layer 31A, 12th functional layer 31B, and 13th functional layer 31C, the term and symbol "first functional layer 31" are used. When describing the configuration common to the 21st functional layer 32A, 22nd functional layer 32B, and 23rd functional layer 32C, the term and symbol "second functional layer 32" are used. When describing the configuration common to the first light-emitting layer 33A, second light-emitting layer 33B, and third light-emitting layer 33C, the term and symbol "light-emitting layer 33" are used.

[0071] The light-emitting layer 33 is located between the first functional layer 31 and the second functional layer 32. The first functional layer 31 is located between the lower electrode 20 and the light-emitting layer 33. The second functional layer 32 is located between the light-emitting layer 33 and the upper electrode 40.

[0072] The first functional layer 31 and the second functional layer 32 may be a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, etc. When the lower electrode 20 is an anode, the first functional layer 31 may include at least one of a hole injection layer and a hole transport layer. When the upper electrode 40 is a cathode, the second functional layer 32 may include at least one of an electron transport layer, an electron injection layer, and a charge generation layer.

[0073] The light-emitting layer 33 includes a light-emitting material. Light is emitted from the light-emitting layer 33 by recombination of holes and electrons in the light-emitting material. The first light-emitting layer 33A, the second light-emitting layer 33B, and the third light-emitting layer 33C may each emit light of a different color. For example, the first light-emitting layer 33A may be a red light-emitting layer, the second light-emitting layer 33B may be a green light-emitting layer, and the third light-emitting layer 33C may be a blue light-emitting layer.

[0074] The two organic layers 30 of two different types of elements 15 adjacent to each other in a planar view are not continuous. For example, when a first element 15A and a second element 15B are adjacent to each other in a planar view, the eleventh functional layer 31A and the twelfth functional layer 31B are not continuous, and the twenty-first functional layer 32A and the twenty-second functional layer 32B are not continuous. The eleventh functional layer 31A and the twelfth functional layer 31B may contain the same material. The twenty-first functional layer 32A and the twenty-second functional layer 32B may contain the same material. The first light-emitting layer 33A and the second light-emitting layer 33B contain different materials.

[0075] In a typical manufacturing method for an organic EL display device, the light-emitting layer is formed by a vapor deposition method using a mask, while the first and second functional layers are formed by a vapor deposition method without a mask. The first functional layer of the first element and the first functional layer of the second element are formed simultaneously in the same process. The second functional layer of the first element and the second functional layer of the second element are also formed simultaneously in the same process. In this case, in the first element and the second element adjacent to each other in a planar view, the 11th and 12th functional layers are continuous, and the 21st and 22nd functional layers are also continuous. In other words, the first and second functional layers are common layers that extend across multiple elements. In this case, carrier leakage between the first element and the second element is likely to occur. The carriers are holes or electrons. Carrier leakage can cause undesirable phenomena such as a reduced color gamut and a shortened element lifespan.

[0076] In this embodiment, the 11th functional layer 31A and the 12th functional layer 31B are not continuous, and the 21st functional layer 32A and the 22nd functional layer 32B are not continuous, so carrier leakage can be reduced, thereby suppressing undesirable phenomena such as a reduction in color gamut and a shortened device lifespan.

[0077] As described below, each layer of the second organic layer 30B is formed by a process different from the process for forming each layer of the first organic layer 30A. Each layer of the second organic layer 30B may have a different configuration from each layer of the first organic layer 30A. For example, the thickness of the twelfth functional layer 31B may be different from the thickness of the eleventh functional layer 31A. For example, the material of the twelfth functional layer 31B may be different from the material of the eleventh functional layer 31A. For example, the thickness of the second functional layer 32B may be different from the thickness of the first functional layer 32A. For example, the material of the second functional layer 32B may be different from the material of the first functional layer 32A. By individually setting the configuration of the first functional layer 31 and the second functional layer 32 according to the type of element 15, the characteristics of the first element 15A, the second element 15B, and the third element 15C can be individually and appropriately adjusted.

[0078] Examples of materials that can be used for the hole injection layer or the hole transport layer include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, polythiophene derivatives, polyaniline derivatives, polypyrrole derivatives, phenylamine derivatives, anthracene derivatives, carbazole derivatives, fluorene derivatives, distyrylbenzene derivatives, polyphenylenevinylene derivatives, porphyrin derivatives, styrylamine derivatives, etc. Also usable are spiro compounds, phthalocyanine compounds, metal oxides, etc.

[0079] Examples of materials that can be used for the electron transport layer, electron injection layer, or charge generation layer include alkali metals, alkali metal alloys, alkali metal halides, alkaline earth metals, alkaline earth metal halides, alkaline earth metal oxides, organic alkali metal complexes, magnesium halides or oxides, aluminum oxide, etc. Examples of electron injection and transport materials include bathocuproine, bathophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, nitro-substituted fluorene derivatives, anthraquinodimethane derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, aromatic ring tetracarboxylic acid anhydrides such as naphthalene and perylene, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane derivatives, anthrone derivatives, quinoxaline derivatives, metal complexes such as quinolinol complexes, phthalocyanine compounds, and distyrylpyrazine derivatives.

[0080] Examples of the material for the light-emitting layer 33 include dye-based materials, metal complex-based materials, and polymer-based materials.

[0081] Examples of the dye-based material include cyclopentadiene derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, silole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, and pyrazoline dimers.

[0082] Examples of metal complex materials include aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazole zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinc complexes, and europium complexes. The metal complexes may include a central metal and a ligand. The central metal may be Al, Zn, Be, or a rare earth metal such as Tb, Eu, or Dy. The ligand may be an oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, or quinoline structure.

[0083] Examples of the polymer-based material include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyvinylcarbazole derivatives, polyfluorene derivatives, polyquinoxaline derivatives, and copolymers thereof.

[0084] (Second bulkhead) The second partition wall 70 is a structure for separating the two organic layers 30 of the two different types of elements 15 that are adjacent to each other in a plan view. The second partition wall 70 is located on the first partition wall 60.

[0085] 3 , each of the plurality of second partition walls 70 may include a first portion 71 and a second portion 72. The first portion 71 may be located on the first partition wall 60. The second portion 72 may be located on the first portion 71.

[0086] The first portion 71 may be located between the organic layers 30 of two adjacent elements 15 in a planar view. For example, the first portion 71 is located between the first organic layer 30A on the first lower electrode 20A and the second organic layer 30B on the second lower electrode 20B in a planar view. For example, the first portion 71 is located between the second organic layer 30B on the second lower electrode 20B and the third organic layer 30C on the third lower electrode 20C in a planar view. For example, the first portion 71 is located between the third organic layer 30C on the third lower electrode 20C and the first organic layer 30A on the first lower electrode 20A in a planar view.

[0087] 4A and 4B, the first portion 71 may include a first upper surface 711, a first lower surface 712, and a first side surface 713. The first lower surface 712 faces the first partition wall 60. The first lower surface 712 may be in contact with the first partition wall 60. The first upper surface 711 is located on the opposite side of the first lower surface 712 in the vertical direction D3. The first side surface 713 extends from the first upper surface 711 to the first lower surface 712.

[0088] 4A and 4B, the second portion 72 may include a second upper surface 721, a second lower surface 722, and a second side surface 723. The second lower surface 722 faces the first portion 71. The second lower surface 722 may be in contact with the first portion 71. The second upper surface 721 is located on the opposite side of the second lower surface 722 in the vertical direction D3. The second side surface 723 extends from the second upper surface 721 to the second lower surface 722.

[0089] The second portion 72 may have a width greater than that of the first portion 71. For example, the second lower surface 722 of the second portion 72 may have a width greater than that of the first upper surface 711 of the first portion 71. The widths of the first portion 71 and the second portion 72 are measured along a straight line connecting the center points of two organic layers 30 of two adjacent elements 15 in a plan view. Because the width of the second portion 72 is greater than the width of the first portion 71, a space is formed below the second lower surface 722 of the second portion 72 in the vertical direction D3. For example, a space is formed between the second lower surface 722 of the second portion 72 and the first partition wall 60 in the vertical direction D3.

[0090] The first portion 71 has a thickness T3. The thickness T3 of the first portion 71 is measured at a midpoint between the centers of the two organic layers 30 of two adjacent elements 15 in a plan view. As shown in FIG. 4B , the thickness T3 of the first portion 71 may be greater than the thickness T1 of the organic layer 30 located on the lower electrode 20. Because the thickness T3 is greater than the thickness T1, it is possible to prevent the space below the second lower surface 722 of the second portion 72 from being blocked by the organic layer 30.

[0091] The ratio T3 / T1 of the thickness T3 of the first portion 71 to the thickness T1 of the organic layer 30 may be, for example, 1.0 or more, 1.5 or more, or 2.0 or more. T3 / T1 may be, for example, 5.0 or less, 7.0 or less, or 10.0 or less. The range of T3 / T1 may be determined by a first group consisting of 1.0, 1.5, and 2.0 and / or a second group consisting of 5.0, 7.0, and 10.0. The range of T3 / T1 may be determined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of T3 / T1 may be determined by a combination of any two of the values ​​included in the first group described above. The range of T3 / T1 may be determined by a combination of any two of the values ​​included in the second group described above. T3 / T1 may be, for example, 1.0 or more and 10.0 or less, 1.0 or more and 7.0 or less, 1.0 or more and 5.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.5 or more and 10.0 or less, 1.5 or more and 7.0 or less, 1.5 or more and 5.0 or less, 1.5 or more and 2.0 or less, 2.0 or more and 10.0 or less, 2.0 or more and 7.0 or less, 2.0 or more and 5.0 or less, 5.0 or more and 10.0 or less, 5.0 or more and 7.0 or less, or 7.0 or more and 10.0 or less.

[0092] As described below, the second layer of the upper electrode 40 is formed by vapor deposition in the space below the second lower surface 722 of the second portion 72. As described below, in the vapor deposition process for forming the second layer, particles of the conductive material constituting the second layer are subjected to a repulsive force from the suppression layer 50. Therefore, even if the space below the second lower surface 722 of the second portion 72 is narrow, the particles of the conductive material can penetrate into the space. According to the present embodiment, the second layer of the upper electrode 40 can be stably formed in the space below the second lower surface 722 of the second portion 72 while preventing T3 / T1 from becoming too large. The larger T3 / T1 is, i.e., the greater the thickness T3 of the first portion 71, the longer the time required for the process for forming the first portion 71. By limiting T3 / T1, i.e., by limiting T3, the productivity of the organic device 10 can be improved.

[0093] The second partition wall 70 includes a conductive layer. For example, as shown in FIG. 4B , a first portion 71 of the second partition wall 70 may include a conductive layer 75. A first side surface 713 of the first portion 71 may be at least partially constituted by the conductive layer 75. The second portion 72 may include a first insulating layer 76. A second lower surface 722 of the second portion 72 may be constituted by the first insulating layer 76.

[0094] The conductive layer 75 includes a conductive material such as a metal. Examples of materials for the conductive layer 75 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), and carbon. These materials may be used alone or in combination of two or more. When two or more materials are used, layers made of each material may be stacked. Alternatively, an alloy containing two or more materials may be used. For example, a magnesium alloy such as MgAg, or an aluminum alloy such as AlLi, AlCa, or AlMg may be used.

[0095] The second portion 72 defines a range that separates the two organic layers 30 of two different types of elements 15 that are adjacent in plan view. The position and dimensions of the second portion 72 preferably have high precision. By having high precision in the position and dimensions of the second portion 72, the two organic layers 30 can be separated with high precision. The first insulating layer 76 of the second portion 72 preferably includes a material that can be processed with high precision. For example, the first insulating layer 76 preferably includes a material that can be processed by dry etching. An example of a material for the first insulating layer 76 is a silicon compound. Examples of silicon compounds include silicon oxide and silicon nitride.

[0096] (upper electrode) The plurality of upper electrodes 40 may be distinguished according to the type of organic layer 30. For example, the plurality of upper electrodes 40 may include a plurality of first upper electrodes 40A and a plurality of second upper electrodes 40B. For example, the plurality of upper electrodes 40 may include a plurality of first upper electrodes 40A, a plurality of second upper electrodes 40B, and a plurality of third upper electrodes 40C. The first upper electrode 40A is an upper electrode 40 that includes a portion located on the first organic layer 30A. The second upper electrode 40B is an upper electrode 40 that includes a portion located on the second organic layer 30B. The third upper electrode 40C is an upper electrode 40 that includes a portion located on the third organic layer 30C.

[0097] When describing a configuration common to the first upper electrode 40A, the second upper electrode 40B, and the third upper electrode 40C, the term and reference numeral "upper electrode 40" will be used.

[0098] The upper electrode 40 includes a conductive material such as a metal. Examples of materials for the upper electrode 40 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), and carbon. These materials may be used alone or in combination of two or more. When two or more materials are used, layers made of each material may be stacked. Furthermore, an alloy containing two or more materials may be used. For example, magnesium alloys such as MgAg and aluminum alloys such as AlLi, AlCa, and AlMg may be used. MgAg is also called magnesium silver. Magnesium silver is preferably used as the material for the upper electrode 40. Alloys of alkali metals and alkaline earth metals may also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc. may be used.

[0099] In a typical manufacturing method for an organic EL display device, the upper electrode is formed by a vapor deposition method that does not use a mask. If a second partition is not disposed on the first partition, the upper electrode can extend continuously across the first and second elements that are adjacent in plan view. In other words, in a typical organic EL display device, the upper electrode is a common electrode shared by multiple elements. If the common electrode is connected to a power line of the organic EL display device at at least one point, power can be supplied to the multiple elements, causing them to emit light.

[0100] In the present embodiment, the second partition 70 is disposed on the first partition 60, and therefore the two upper electrodes 40 of two adjacent elements 15 are separated by the second partition 70. That is, the two upper electrodes 40 of two adjacent elements 15 are not continuous. For example, the first upper electrode 40A and the second upper electrode 40B are not continuous. In this state, the first upper electrode 40A and the second upper electrode 40B are not electrically connected. In order to supply power to the two adjacent elements 15 and cause them to emit light, it is necessary to connect each of the first upper electrode 40A and the second upper electrode 40B to the power supply line of the organic EL display device.

[0101] In consideration of these issues, in this embodiment, the two upper electrodes 40 of two adjacent elements 15 are each in contact with the conductive layer 75 of the second partition wall 70. For example, as shown in FIG. 4B , the first upper electrode 40A of the first element 15A is in contact with the conductive layer 75 of the first side surface 713 of the first portion 71 facing the first element 15A. Furthermore, the second upper electrode 40B of the second element 15B is in contact with the conductive layer 75 of the first side surface 713 of the first portion 71 facing the second element 15B. Therefore, the first upper electrode 40A of the first element 15A and the second upper electrode 40B of the second element 15B are electrically connected. In this case, by connecting at least one of the first upper electrode 40A and the second upper electrode 40B to a power supply line of the organic EL display device, power can be supplied to the two adjacent elements 15, causing them to emit light. By realizing electrical connections at multiple positions using the conductive layer 75 of the second partition wall 70, the upper electrodes 40 of multiple elements 15 can be electrically connected.

[0102] The configuration of the upper electrode 40 will be described. The upper electrode 40 may include a first layer 41 and a second layer 42. The first layer 41 includes a portion located on the organic layer 30. The second layer 42 is located in the space below the second lower surface 722 of the second portion 72 of the second partition 70. The second layer 42 electrically connects the first layer 41 and the conductive layer 75 of the second partition 70. The second layer 42 includes a portion in contact with the first layer 41 and a portion in contact with the conductive layer 75.

[0103] The first upper electrode 40A, the second upper electrode 40B, and the third upper electrode 40C may each include a first layer 41 and a second layer 42. For example, the first upper electrode 40A may include an eleventh layer 41A and a twenty-first layer 42A. For example, the second upper electrode 40B may include a twelfth layer 41B and a twenty-second layer 42B. For example, the third upper electrode 40C may include a thirteenth layer 41C and a twenty-third layer 42C. The eleventh layer 41A, the twelfth layer 41B, and the thirteenth layer 41C are the first layers 41 of the first upper electrode 40A, the second upper electrode 40B, and the third upper electrode 40C. The twenty-first layer 42A, the twenty-second layer 42B, and the twenty-third layer 42C are the second layers 42 of the first upper electrode 40A, the second upper electrode 40B, and the third upper electrode 40C. When describing a configuration common to the 11th layer 41A, 12th layer 41B, and 13th layer 41C, the term and symbol "first layer 41" is used. When describing a configuration common to the 21st layer 42A, 22nd layer 42B, and 23rd layer 42C, the term and symbol "second layer 42" is used.

[0104] 4A and 4B, the first layer 41 includes an end portion 41e. The end portion 41e is the outer contour of the first layer 41 in a plan view. As shown in FIGS. 4A and 4B, the end portion 41e of the first layer 41 may be located on the first partition wall 60.

[0105] As shown in Figures 4A and 4B, the second layer 42 includes an end portion 42e. The end portion 42e is the inner contour of the portion of the second layer 42 that is in contact with the first layer 41 in a plan view. As shown in Figures 4A and 4B, the end portion 42e of the second layer 42 is located more inward than the end portion 41e of the first layer 41. The end portion 42e of the second layer 42 may be located on the first layer 41. The second layer 42 may be in contact with the first layer 41 between the end portion 41e of the first layer 41 and the end portion 42e of the second layer 42.

[0106] 4A and 4B , the second layer 42 may be in contact with the first side surface 713 of the first portion 71 and the second lower surface 722 of the second portion 72 of the second partition wall 70. In other words, the second layer 42 may include a portion in contact with the first side surface 713 of the first portion 71 and a portion in contact with the second lower surface 722 of the second portion 72. The second layer 42 may be a continuous layer including a portion in contact with the first layer 41, a portion in contact with the first side surface 713 of the first portion 71, and a portion in contact with the second lower surface 722 of the second portion 72.

[0107] 4A and 4B , the second layer 42 may also be in contact with the second side surface 723 of the second portion 72 of the second partition wall 70. The second layer 42 may be a continuous layer including a portion in contact with the first layer 41, a portion in contact with the first side surface 713 of the first portion 71, a portion in contact with the second lower surface 722 of the second portion 72, and a portion in contact with the second side surface 723 of the second portion 72.

[0108] (Suppression layer) Each of the multiple suppression layers 50 may be located on the first layer 41 of the upper electrode 40. The multiple suppression layers 50 may be distinguished according to the type of the first layer 41. For example, the multiple suppression layers 50 may include multiple first suppression layers 50A and multiple second suppression layers 50B. For example, the multiple suppression layers 50 may include multiple first suppression layers 50A, multiple second suppression layers 50B, and multiple third suppression layers 50C. The first suppression layer 50A is located on the eleventh layer 41A of the first upper electrode 40A. The second suppression layer 50B is located on the twelfth layer 41B of the second upper electrode 40B. The third suppression layer 50C is located on the thirteenth layer 41C of the third upper electrode 40C.

[0109] When describing a configuration common to the first suppression layer 50A, the second suppression layer 50B, and the third suppression layer 50C, the term and symbol "suppression layer 50" are used.

[0110] The suppression layer 50 has the property that particles of the conductive material that constitutes the upper electrode 40 do not easily adhere to it. In this embodiment, as will be described later, the second layer 42 of the upper electrode 40 is formed by a vapor deposition method after the suppression layer 50 is formed on the first layer 41. The second layer 42 is likely to be formed in a location where the suppression layer 50 is not formed. As shown in FIGS. 4A and 4B , the second layer 42 does not have to be in contact with the suppression layer 50. Although not shown, a portion of the second layer 42 may be in contact with the suppression layer 50.

[0111] The material of the suppression layer 50 may be a nucleation-inhibiting coating material described in WO2017072678A1 or WO2019150327A1. For example, the material of the suppression layer 50 may include an organic material such as a small molecule organic material or an organic polymer. The organic material may be, for example, a polycyclic aromatic compound. The polycyclic aromatic compound includes an organic molecule including a core portion and at least one terminal portion bonded to the core portion. The organic molecule may include one or more heteroatoms, such as nitrogen, sulfur, oxygen, phosphorus, or aluminum. The number of terminal portions may be one or more, two or more, three or more, or four or more. When the organic molecule includes two or more terminal portions, the two or more terminal portions may be the same or different.

[0112] The terminal moiety may include a biphenylyl moiety represented by any of the following chemical structures (1-a), (1-b), and (1-c). [ka]

[0113] The substituents Ra and Rb may each independently be selected from deuterium, fluorine, alkyl including C1-C4 alkyl, cycloalkyl, arylalkyl, silyl, aryl, heteroaryl, fluoroalkyl, and any combination thereof.

[0114] The suppression layer 50 includes an end 50e. The end 50e is the outer contour of the suppression layer 50 in a plan view. As shown in FIGS. 4A and 4B , the end 50e of the suppression layer 50 may be located on the first layer 41 of the upper electrode 40. The end 50e of the suppression layer 50 may be located more inward than the end 41e of the first layer 41 of the upper electrode 40. In other words, the suppression layer 50 does not have to cover the end 41e of the first layer 41 of the upper electrode 40. The portion of the first layer 41 that is not covered by the suppression layer 50 can be in contact with the second layer 42.

[0115] The suppression layer 50 may be transparent enough to allow light emitted from the organic layer 30 to pass through the suppression layer 50. The suppression layer 50 may also function as a so-called capping layer. The capping layer is a layer for increasing the light transmittance in the element 15. For example, the suppression layer 50 may have a refractive index set to suppress total reflection of the light emitted from the organic layer 30 by the upper electrode 40.

[0116] (protective layer) Each of the multiple protective layers 55 may cover a component of the element 15, such as the upper electrode 40 or the suppression layer 50. The multiple protective layers 55 may be distinguished according to the type of element 15. For example, the multiple protective layers 55 may include multiple first protective layers 55A and multiple second protective layers 55B. For example, the multiple protective layers 55 may include multiple first protective layers 55A, multiple second protective layers 55B, and multiple third protective layers 55C. The first protective layer 55A covers the first upper electrode 40A and the first suppression layer 50A of the first element 15A. The second protective layer 55B covers the second upper electrode 40B and the second suppression layer 50B of the second element 15B. The third protective layer 55C covers the third upper electrode 40C and the third suppression layer 50C of the third element 15C.

[0117] When describing a configuration common to the first protective layer 55A, the second protective layer 55B, and the third protective layer 55C, the term and symbol "protective layer 55" will be used.

[0118] The protective layer 55 can prevent the lower electrode 20, the organic layer 30, the upper electrode 40, and the suppression layer 50 of the device 15 from being exposed to the outside air. The material of the protective layer 55 may include an inorganic compound such as an inorganic oxide or an inorganic nitride. An example of the inorganic oxide is silicon oxide. An example of the inorganic nitride is silicon nitride.

[0119] 6 is a cross-sectional view showing an example of the configuration of a layer located on the second partition 70. The organic device 10 may include an organic layer 30 located on the second partition 70. The organic layer 30 located on the second partition 70 is not continuous with the organic layer 30 located on the lower electrode 20. As shown in FIG. 6, the organic layer 30 on the second partition 70 located between the first element 15A and the second element 15B may include a first organic layer 30A and a second organic layer 30B.

[0120] 6, the organic device 10 may include a first layer 41 located on the organic layer 30 located on the second partition 70. The first layer 41 located on the organic layer 30 located on the second partition 70 is not continuous with the first layer 41 located on the organic layer 30 located on the lower electrode 20. As shown in FIG. 6, the first layer 41 located on the organic layer 30 on the second partition 70 located between the first element 15A and the second element 15B may include an eleventh layer 41A and a twelfth layer 41B.

[0121] 6, the organic device 10 may include an suppression layer 50 located on the first layer 41 located on the organic layer 30 located on the second partition 70. The suppression layer 50 located on the first layer 41 located on the organic layer 30 located on the second partition 70 is not continuous with the suppression layer 50 located on the first layer 41 located on the organic layer 30 located on the lower electrode 20. As shown in FIG. 6, the suppression layer 50 located on the first layer 41 located on the organic layer 30 on the second partition 70 located between the first element 15A and the second element 15B may include a first suppression layer 50A and a second suppression layer 50B.

[0122] 6 , the second layer 42 may include a portion in contact with the second side surface 723 of the second portion 72 of the second partition wall 70. The second layer 42 may include a portion in contact with the side surface of the organic layer 30 located on the second partition wall 70. The second layer 42 may include a portion in contact with the side surface of the first layer 41 located on the organic layer 30 located on the second partition wall 70.

[0123] 6, the protective layer 55 may cover a layer located on the second partition wall 70. The protective layer 55 may cover the second layer 42 located on the second side surface 723 of the second portion 72 of the second partition wall 70.

[0124] A method for manufacturing the organic device 10 will now be described.

[0125] A substrate 11 is prepared. Then, a plurality of lower electrodes 20 are formed on a first surface 111 of the substrate 11. For example, a conductive layer constituting the lower electrode 20 is formed on the first surface 111 by a sputtering method or the like. Then, the conductive layer is processed by a photolithography method or the like. As a result, a plurality of lower electrodes 20 are obtained. The plurality of lower electrodes 20 includes a plurality of first lower electrodes 20A, a plurality of second lower electrodes 20B, and a plurality of third lower electrodes 20C.

[0126] Next, a first partition 60 is formed between two lower electrodes 20 adjacent to each other in a planar view. For example, an insulating layer constituting the first partition 60 is formed on the first surface 111 and the plurality of lower electrodes 20. Next, the insulating layer is processed. As a result, a plurality of first partitions 60 made of the insulating layer are obtained, as shown in FIG. 7. The processing method of the insulating layer may be determined depending on the material of the insulating layer. When the material of the insulating layer is photosensitive, the processing method of the insulating layer may include an exposure step and a development step. When the material of the insulating layer includes an inorganic compound such as an inorganic oxide or an inorganic nitride, the processing method of the insulating layer may include a step of dry etching the insulating layer.

[0127] Subsequently, a second partition wall formation process is performed to form second partition walls 70 on the first partition walls 60. The second partition wall formation process may include a process of forming a conductive layer 75 on the plurality of lower electrodes 20 and the plurality of first partition walls 60, as shown in FIG. 8. The conductive layer 75 may be formed by a vapor deposition method. The vapor deposition method may be physical vapor deposition or chemical vapor deposition. Examples of physical vapor deposition include vacuum deposition, ion plating, and sputtering. Examples of chemical vapor deposition include chemical vapor deposition.

[0128] 8, the second partition wall formation step may include a step of forming a first insulating layer 76 on the conductive layer 75. The first insulating layer 76 may be formed by a vapor deposition method. The vapor deposition method may be physical vapor deposition or chemical vapor deposition. For example, the first insulating layer 76 may be formed by chemical vapor deposition.

[0129] 9, the second partition wall forming step may include a step of forming a plurality of resist layers 80 on the first insulating layer 76. Each of the plurality of resist layers 80 has a shape corresponding to the second portion 72.

[0130] As shown in FIG. 10 , the second partition wall forming step may include a step of etching the first insulating layer 76. The etching of the first insulating layer 76 may be dry etching using an etching gas or wet etching using an etching solution. Preferably, the first insulating layer 76 is processed by dry etching. In dry etching, the first insulating layer 76 is partially removed by an etching gas. Compared to wet etching, dry etching can process the first insulating layer 76 with higher precision. Therefore, the position and dimensions of the second portion 72 of the second partition wall 70 formed by the first insulating layer 76 can be determined with high precision.

[0131] The etching of the first insulating layer 76 may be anisotropic dry etching, in which the etching reaction proceeds preferentially in the vertical direction D3.

[0132] 11, the second partition wall forming step may include a step of removing the plurality of resist layers 80. Each of the plurality of resist layers 80 has a shape corresponding to the second portion 72.

[0133] 12, the second partition wall formation step may include a step of etching the conductive layer 75. By etching the conductive layer 75, a plurality of first portions 71 are formed. In this manner, a structure including the substrate 11, a plurality of lower electrodes 20, a plurality of first partition walls 60, and a plurality of second partition walls 70 is prepared.

[0134] The conductive layer 75 may be etched by wet etching using an etching solution. Portions of the conductive layer 75 that do not overlap the first insulating layer 76 in a planar view are removed. The wet etching also partially removes portions of the conductive layer 75 that overlap the first insulating layer 76 in a planar view. Therefore, the width W11 of the first upper surface 711 of the first portion 71 is smaller than the width W22 of the second lower surface 722 of the second portion 72. In other words, the second lower surface 722 of the second portion 72 has a width W22 that is larger than the width W11 of the first upper surface 711 of the first portion 71. The width W22 of the second lower surface 722 of the second portion 72 may be smaller than the width of the first partition wall 60.

[0135] The difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711 may be, for example, 1.0 μm or more, 1.5 μm or more, or 2.0 μm or more. The difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711 may be, for example, 4.0 μm or less, 5.0 μm or less, or 6.0 μm or less. The range of the difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711 may be defined by a first group consisting of 1.0 μm, 1.5 μm, and 2.0 μm, and / or a second group consisting of 4.0 μm, 5.0 μm, and 6.0 μm. The range of difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711 may be determined by a combination of any one of the values ​​included in the first group described above and any one of the values ​​included in the second group described above. The range of difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711 may be determined by a combination of any two of the values ​​included in the first group described above. The range of difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711 may be determined by a combination of any two of the values ​​included in the second group described above. The difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711 may be, for example, 1.0 μm or more and 6.0 μm or less, 1.0 μm or more and 5.0 μm or less, 1.0 μm or more and 4.0 μm or less, 1.0 μm or more and 2.0 μm or less, 1.0 μm or more and 1.5 μm or less, 1.5 μm or more and 6.0 μm or less, or 1.5 μm or more and 5.0 μm or less. m or less, 1.5 μm or more and 4.0 μm or less, 1.5 μm or more and 2.0 μm or less, 2.0 μm or more and 6.0 μm or less, 2.0 μm or more and 5.0 μm or less, 2.0 μm or more and 4.0 μm or less, 4.0 μm or more and 6.0 μm or less, 4.0 μm or more and 5.0 μm or less, or 5.0 μm or more and 6.0 μm or less.

[0136] The greater the difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711, the more likely it is that the end 30e of the organic layer 30 will come into contact with the first side surface 713 of the first portion 71. The smaller the difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711, the more likely it is that the second layer 42 of the upper electrode 40 will be formed on the first side surface 713 of the first portion 71.

[0137] In the process of forming the second layer 42, such as the 21st layer 42A of the first upper electrode 40A, the particles of the conductive material that make up the second layer 42 are subjected to a repulsive force from the suppression layer 50. Therefore, even if there is a large difference between the width W22 of the second lower surface 722 and the width W11 of the first upper surface 711, the particles of the conductive material can adhere to the first side surface 713 of the first portion 71. By forming the second layer 42 on the first side surface 713, the first layer 41 and the conductive layer 75 of the first portion 71 are electrically connected to each other.

[0138] The wet etching of the conductive layer 75 may proceed isotropically. In this case, the portion of the conductive layer 75 closer to the first insulating layer 76 in the vertical direction D3 is etched more than the portion of the conductive layer 75 farther from the first insulating layer 76. Therefore, the width W11 of the first upper surface 711 of the first portion 71 is smaller than the width W12 of the first lower surface 712 of the first portion 71.

[0139] The ratio W11 / W12 of the width W11 of the first upper surface 711 to the width W12 of the first lower surface 712 may be, for example, 0.40 or more, 0.50 or more, or 0.60 or more. W11 / W12 may be, for example, 0.80 or less, 0.90 or less, or 1.00 or less. The range of W11 / W12 may be defined by a first group consisting of 0.40, 0.50, and 0.60 and / or a second group consisting of 0.80, 0.90, and 1.00. The range of W11 / W12 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of W11 / W12 may be defined by a combination of any two of the values ​​included in the first group. The range of W11 / W12 may be defined by a combination of any two of the values ​​included in the second group. W11 / W12 may be, for example, 0.40 or more and 1.00 or less, 0.40 or more and 0.90 or less, 0.40 or more and 0.80 or less, 0.40 or more and 0.60 or less, 0.40 or more and 0.50 or less, 0.50 or more and 1.00 or less, 0.50 or more and 0.90 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.60 or less, 0.60 or more and 1.00 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, 0.80 or more and 1.00 or less, 0.80 or more and 0.90 or less, or 0.90 or more and 1.00 or less. The smaller the difference between the width W12 of the first lower surface 712 and the width W11 of the first upper surface 711, the more easily the second layer 42 of the upper electrode 40 is formed on the first side surface 713 of the first portion 71.

[0140] 13, a first organic layer formation step is performed to form a first organic layer 30A. The first organic layer 30A may be formed on each of the first lower electrode 20A, the second lower electrode 20B, and the third lower electrode 20C.

[0141] The first organic layer 30A may be formed by a vapor deposition method without using a mask. A second partition 70 located on the first partition 60 divides the first organic layer 30A. Therefore, two organic layers 30 located on two different lower electrodes 20 adjacent to each other in a plan view are not continuous. For example, the first organic layer 30A located on the first lower electrode 20A and the first organic layer 30A located on the second lower electrode 20B are not continuous. As shown in FIG. 13 , the first organic layer 30A may also be formed on a second portion 72 of the second partition 70.

[0142] The evaporation method is, for example, vacuum evaporation. In vacuum evaporation, particles of an organic material are generated in a vacuum atmosphere by heating an evaporation source. The evaporation source is, for example, a crucible. The evaporation source contains the organic material.

[0143] 14, a step of forming an eleventh layer 41A of the first upper electrode 40A is performed. The eleventh layer 41A may be formed on each of the first organic layer 30A located on the first lower electrode 20A, the first organic layer 30A located on the second lower electrode 20B, and the first organic layer 30A located on the third lower electrode 20C.

[0144] The 11th layer 41A of the first upper electrode 40A may be formed by a vapor deposition method without using a mask. The second partition 70 located on the first partition 60 divides the 11th layer 41A. Therefore, two 11th layers 41A located on two different first organic layers 30A adjacent to each other in a planar view are not continuous. For example, the 11th layer 41A located on the first organic layer 30A located on the first lower electrode 20A is not continuous with the 11th layer 41A located on the first organic layer 30A located on the second lower electrode 20B. As shown in FIG. 14 , the 11th layer 41A may also be formed on the first organic layer 30A located on the second portion 72 of the second partition 70.

[0145] The vapor deposition method is, for example, vacuum deposition, in which particles of a conductive material are generated in a vacuum atmosphere by heating a vapor deposition source.

[0146] The deposition angle of the deposition method for forming the 11th layer 41A may be larger than the deposition angle of the deposition method for forming the first organic layer 30A. The deposition angle is the maximum angle formed by the movement direction of particles moving from a deposition source toward the substrate 11 with respect to the normal direction to the first surface 111 of the substrate 11. The larger the deposition angle, the closer the particles can reach a position to the first side surface 713 of the first portion 71. When the deposition angle of the deposition method for the 11th layer 41A is larger than the deposition angle of the deposition method for the first organic layer 30A, the end 41e of the 11th layer 41A can be positioned outward relative to the end 30e of the first organic layer 30A.

[0147] 15, a first suppression layer forming step is performed to form a first suppression layer 50A. The first suppression layer 50A may be formed on each of the 11th layer 41A located on the first organic layer 30A located on the first lower electrode 20A, the 11th layer 41A located on the first organic layer 30A located on the second lower electrode 20B, and the 11th layer 41A located on the first organic layer 30A located on the third lower electrode 20C.

[0148] The first suppression layer 50A may be formed by a vapor deposition method without using a mask. The second partition 70 located on the first partition 60 divides the first suppression layer 50A. Therefore, two first suppression layers 50A located on two different adjacent 11th layers 41A in a planar view are not continuous. For example, the first suppression layer 50A located on the 11th layer 41A located on the first organic layer 30A located on the first lower electrode 20A is not continuous with the first suppression layer 50A located on the 11th layer 41A located on the first organic layer 30A located on the second lower electrode 20B. As shown in FIG. 15 , the first suppression layer 50A may also be formed on the 11th layer 41A located on the first organic layer 30A located on the second portion 72 of the second partition 70.

[0149] The vapor deposition method is, for example, vacuum vapor deposition, in which a vapor deposition source is heated to generate particles of the material that constitutes the first suppression layer 50A in a vacuum atmosphere.

[0150] The deposition angle of the deposition method for forming the first suppression layer 50A may be smaller than the deposition angle of the deposition method for forming the eleventh layer 41A. When the deposition angle of the deposition method for forming the first suppression layer 50A is smaller than the deposition angle of the deposition method for forming the eleventh layer 41A, the end 50e of the first suppression layer 50A can be positioned more inward than the end 41e of the eleventh layer 41A. That is, the first suppression layer 50A is prevented from covering the end 41e of the eleventh layer 41A. Furthermore, the first suppression layer 50A is prevented from being formed on the first partition wall 60 and the first side surface 713 of the first portion 71.

[0151] Next, as shown in FIG. 16, a step of forming the 21st layer 42A of the first upper electrode 40A is performed. The 21st layer 42A may be formed by a vapor deposition method without using a mask. As described above, the first suppression layer 50A is configured to prevent adhesion of conductive material particles constituting the second layer 42, such as the 21st layer 42A. The conductive material particles can move by utilizing the repulsive force from the suppression layer 50. Therefore, the 21st layer 42A is formed in a location where the first suppression layer 50A is not formed. For example, as shown in FIG. 16, the 21st layer 42A is formed to include an end 42e located on the 11th layer 41A and not in contact with the end 50e of the first suppression layer 50A. For example, the 21st layer 42A is formed to include a portion in contact with the 11th layer 41A and a portion in contact with the first side surface of the first portion 71. The first side surface of the first portion 71 is formed of a conductive layer. The twenty-first layer 42A can electrically connect the eleventh layer 41A located on the first organic layer 30A located on the first lower electrode 20A to the conductive layer of the second partition wall .

[0152] 16, the 21st layer 42A may include a portion located on the second lower surface of the second portion 72. The 21st layer 42A may include a portion located on the second side surface of the second portion 72.

[0153] 17, a first protective layer forming step is performed to form a first protective layer 55A. The first protective layer 55A may be formed to cover the surfaces of the components located on the first surface 111 of the substrate 11. The first protective layer 55A may be formed by chemical vapor deposition, such as chemical vapor deposition.

[0154] 18, a first resist layer forming step is performed to form a first resist layer 81. The first resist layer 81 is formed so as to cover the components of the first element 15A. For example, the first resist layer 81 is formed so as to cover the portion of the first protective layer 55A located above the first lower electrode 20A. The first protective layer 55A located above the second partition wall 70 adjacent to the first lower electrode 20A may be partially covered by the first resist layer 81. The portion of the first protective layer 55A located above the second lower electrode 20B and the portion of the first protective layer 55A located above the third lower electrode 20C may not be covered by the first resist layer 81.

[0155] The resist layer such as the first resist layer 81 includes, for example, a photosensitive resin. By performing an exposure process and a development process on the resist layer formed on the first surface 111 of the substrate 11, the first resist layer 81 is formed to cover the portion of the first protective layer 55A located above the first lower electrode 20A.

[0156] 19, a process of partially removing the first protective layer 55A is performed. The portions of the first protective layer 55A that are not covered by the first resist layer 81 are removed. The method for removing the first protective layer 55A is not particularly limited. For example, the first protective layer 55A may be removed by dry etching. Dry etching includes plasma etching, reactive ion etching, and the like. In plasma etching, the first protective layer 55A is removed by bombarding the first protective layer 55A with ions generated by generating plasma in an inert gas such as argon gas. In reactive ion etching, a mixed gas of an inert gas such as argon gas and a fluorine-based gas is used. In reactive ion etching, the first protective layer 55A is removed by utilizing not only the energy generated by bombarding the first protective layer 55A with ions but also a chemical reaction between the mixed gas and the first protective layer 55A. The fluorine-based gas is CF4, C4F4, CHF4, or the like.

[0157] Next, as shown in FIG. 20 , a step of partially removing the first upper electrode 40A and the first suppression layer 50A is performed. The portions of the first upper electrode 40A and the first suppression layer 50A that are not covered by the first resist layer 81 are removed. The method for removing the 11th layer 41A and the 21st layer 42A of the first upper electrode 40A is not particularly limited. For example, the first upper electrode 40A may be removed by wet etching. The etching solution is an acidic aqueous solution or an alkaline aqueous solution. The method for removing the first suppression layer 50A is not particularly limited. For example, the first suppression layer 50A may be removed by dry etching. As with the first protective layer 55A, the dry etching may be plasma etching, reactive ion etching, or the like.

[0158] Next, as shown in FIG. 21 , a step of partially removing the first organic layer 30A is performed. The portions of the first organic layer 30A that are not covered by the first resist layer 81 are removed. The method for removing the first organic layer 30A is not particularly limited. For example, the first organic layer 30A may be removed by dry cleaning. The dry cleaning method is, for example, plasma ashing. In plasma ashing, a gas such as oxygen gas or nitrogen gas is converted into plasma, and the plasma reacts with the first organic layer 30A, thereby vaporizing and removing the first organic layer 30A.

[0159] 22, a step of removing the first resist layer 81 is carried out. In this manner, the first organic layer 30A, the first upper electrode 40A, the first suppression layer 50A, and the first protective layer 55A are formed on the first lower electrode 20A. The step of forming the first organic layer 30A, the first upper electrode 40A, the first suppression layer 50A, and the first protective layer 55A on the first lower electrode 20A to obtain the first element 15A is also referred to as a first element formation step.

[0160] The first resist layer 81 may be removed together with the first organic layer 30A by plasma ashing. If the first resist layer 81 cannot be completely removed by plasma ashing, the remaining components of the first resist layer 81 may be removed by wet cleaning after the plasma ashing.

[0161] Subsequently, a second element formation process is performed to form the second element 15B. In the second element formation process, similarly to the first element formation process, a second organic layer 30B, a second upper electrode 40B, a second suppression layer 50B, and a second protective layer 55B are formed on the second lower electrode 20B.

[0162] As shown in FIG. 23 , a second organic layer forming step is performed to form the second organic layer 30B. The second organic layer 30B is formed at least on the second lower electrode 20B. Like the first organic layer 30A, the second organic layer 30B may be formed by a vapor deposition method without using a mask. The second organic layer 30B may also be formed on the first element 15A and the third lower electrode 20C. As in the first organic layer forming step, the second partition 70 located on the first partition 60 divides the second organic layer 30B.

[0163] Next, as shown in FIG. 24, a step of forming a twelfth layer 41B of the second upper electrode 40B is performed. The twelfth layer 41B is formed at least on the second organic layer 30B located on the second lower electrode 20B. Like the eleventh layer 41A, the twelfth layer 41B may be formed by a maskless vapor deposition method. The twelfth layer 41B may also be formed on the second organic layer 30B located on the first element 15A and on the second organic layer 30B located on the third lower electrode 20C. As with the eleventh layer 41A, the second partition 70 located on the first partition 60 divides the twelfth layer 41B.

[0164] 24, a second suppression layer forming step is performed to form a second suppression layer 50B. The second suppression layer 50B is formed at least on the twelfth layer 41B located on the second organic layer 30B located on the second lower electrode 20B. The second suppression layer 50B may be formed by a vapor deposition method without using a mask, similar to the first suppression layer 50A. Similar to the first suppression layer 50A, the second suppression layer 50B is formed so as to include an end 50e located inside the end 41e of the twelfth layer 41B.

[0165] Next, as shown in FIG. 24, a step of forming the 22nd layer 42B of the second upper electrode 40B is performed. The 22nd layer 42B may be formed by a maskless vapor deposition method, similar to the 21st layer 42A. The second suppression layer 50B, similar to the first suppression layer 50A, is configured to prevent particles of conductive material from adhering thereto. Therefore, the 22nd layer 42B is formed in a location where the second suppression layer 50B is not formed. For example, as shown in FIG. 24, the 22nd layer 42B is formed to include an end 42e located on the 12th layer 41B and not in contact with the end 50e of the second suppression layer 50B. For example, the 22nd layer 42B is formed to include a portion in contact with the 12th layer 41B and a portion in contact with the first side surface of the first portion 71.

[0166] 25, a second protective layer forming step is performed to form a second protective layer 55B. Similar to the first protective layer 55A, the second protective layer 55B may be formed to cover the surfaces of the components on the first surface 111 of the substrate 11. The second protective layer 55B may be formed by chemical vapor deposition, such as chemical vapor deposition.

[0167] 26, a second resist layer formation step is performed to form a second resist layer 82. The second resist layer 82 is formed so as to cover the components of the second element 15B. For example, the second resist layer 82 is formed so as to cover the portion of the second protective layer 55B located above the second lower electrode 20B. The second protective layer 55B located above the second partition wall 70 adjacent to the second lower electrode 20B may be partially covered by the second resist layer 82. The portion of the second protective layer 55B located above the first lower electrode 20A and the portion of the second protective layer 55B located above the third lower electrode 20C may not be covered by the second resist layer 82.

[0168] 27, a step of partially removing the second protective layer 55B is performed. The portions of the second protective layer 55B that are not covered by the second resist layer 82 are removed in the same manner as the first protective layer 55A.

[0169] Next, as shown in FIG. 28, similar to the first element formation process, a process is carried out to remove the portions of the second upper electrode 40B, the portions of the second suppression layer 50B, and the portions of the second organic layer 30B that are not covered by the second resist layer 82.

[0170] 29, a step of removing the second resist layer 82 is performed. In this manner, the second organic layer 30B, the second upper electrode 40B, the second suppression layer 50B, and the second protective layer 55B are formed on the second lower electrode 20B.

[0171] Subsequently, a third element formation process is performed to form a third element 15C. In the third element formation process, a third organic layer 30C, a third upper electrode 40C, a third suppression layer 50C, and a third protective layer 55C are formed on a third lower electrode 20C, similarly to the second element formation process.

[0172] As shown in FIG. 30, a third organic layer forming step is performed to form the third organic layer 30C. Subsequently, as shown in FIG. 31, a step of forming a 13th layer 41C of the third upper electrode 40C is performed. Subsequently, as shown in FIG. 31, a third suppressing layer forming step is performed to form the third suppressing layer 50C. Subsequently, as shown in FIG. 31, a step of forming a 23rd layer 42C of the third upper electrode 40C is performed. Subsequently, as shown in FIG. 32, a third protective layer forming step is performed to form the third protective layer 55C. Subsequently, as shown in FIG. 33, a third resist layer forming step is performed to form the third resist layer 83. Subsequently, as shown in FIG. 34, a step of partially removing the third protective layer 55C is performed. Subsequently, as shown in FIG. 35, a step of removing the portions of the third upper electrode 40C, the portions of the third suppressing layer 50C, and the portions of the third organic layer 30C that are not covered by the third resist layer 83 is performed. Subsequently, as shown in FIG. 36, a step of removing the third resist layer 83 is performed. In this manner, the third organic layer 30C, the third upper electrode 40C, the third suppression layer 50C, and the third protective layer 55C are formed on the third lower electrode 20C.

[0173] The concept of each step in the third element formation process shown in Figures 30 to 36 is the same as the concept of each step in the second element formation process shown in Figures 23 to 29. A detailed description of each step in the third element formation process shown in Figures 30 to 36 will be omitted.

[0174] By carrying out the first element forming step, the second element forming step, and the third element forming step, an organic device 10 including a first element 15A, a second element 15B, and a third element 15C is obtained as shown in FIG.

[0175] The organic device 10 of the present embodiment includes an upper electrode 40 including a first layer 41 and a second layer 42. The second layer 42 is located between the conductive layer of the second partition wall 70 and the first layer 41. By using the second layer 42, two upper electrodes 40 of two elements 15 that are adjacent in plan view can be electrically connected to each other.

[0176] One method for electrically connecting the upper electrode located on the organic layer 30 to the conductive layer of the second partition wall 70 is to form the upper electrode using a vapor deposition apparatus capable of achieving a large deposition angle. However, the larger the deposition angle, the smaller the thickness of the upper electrode. For example, in a typical vapor deposition method, the thickness of the upper electrode formed in the space below the second portion 72 of the second partition wall 70 is smaller than the thickness of the upper electrode formed on the organic layer. This may result in a decrease in the stability of the electrical connection between the upper electrode and the conductive layer of the second partition wall 70. Furthermore, the larger the deposition angle, the smaller the density distribution of the particles constituting the upper electrode. For example, the larger the gaps between the particles constituting the upper electrode formed in the space below the second portion 72 of the second partition wall 70. This also leads to a decrease in the stability of the electrical connection between the upper electrode and the conductive layer of the second partition wall 70.

[0177] To achieve a large deposition angle, the deposition source needs to be scanned relative to the substrate 11 while the distance between the deposition source and the substrate 11 is kept small. The deposition source is scanned from a first position to a second position relative to the substrate 11. The first position is a position outside a first edge of the substrate 11 in a planar view. The second position is a position outside a second edge of the substrate 11 in a planar view. The second edge is the edge of the substrate 11 opposite to the first edge. The scanning distance of the deposition source from the first position to the second position is larger than the dimension of the substrate 11 in the scanning direction of the deposition source. That is, to achieve a large deposition angle, the scanning distance of the deposition source also needs to be increased.

[0178] In the present embodiment, the second layer 42 of the upper electrode 40 can move by utilizing the repulsive force from the suppression layer 50. Therefore, the second layer 42 is likely to be stably formed in the space below the second portion 72 of the second partition wall 70. For example, the thickness of the second layer 42 formed in the space below the second portion 72 of the second partition wall 70 can be made sufficiently large. For example, it is possible to prevent the gaps between the multiple particles constituting the second layer 42 formed in the space below the second portion 72 of the second partition wall 70 from becoming large. Therefore, the second layer 42 can stably electrically connect the conductive layer of the second partition wall 70 and the first layer 41. According to the present embodiment, the electrical resistance of the upper electrode 40 is stably reduced.

[0179] According to the present embodiment, the first layer 41 and the second layer 42 of the upper electrode 40 can be formed without excessively increasing the deposition angle. This allows the organic device 10 to be manufactured using an existing deposition apparatus. Furthermore, since the scanning distance of the deposition source can be prevented from becoming large, the manufacturing efficiency of the organic device 10 can be improved.

[0180] Chemical vapor deposition, such as chemical vapor deposition, can be used as a method for stably forming an upper electrode in the space below the second portion 72 of the second partition wall 70. However, the rate at which an upper electrode is formed by chemical vapor deposition is slower than the rate at which an upper electrode is formed by physical vapor deposition, such as vacuum deposition. According to the present embodiment, by using the suppression layer 50, the upper electrode 40 can be stably formed in the space below the second portion 72 of the second partition wall 70 using physical vapor deposition, such as vacuum deposition. Therefore, the time required to manufacture the organic device 10 can be shortened compared to when chemical vapor deposition is used.

[0181] Various modifications can be made to the embodiment described above. Other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the embodiment described above will use the same reference numerals as those used for corresponding parts in the embodiment described above. Descriptions of components that overlap with those in the embodiment described above will be omitted as appropriate. If it is clear that the operational effects obtained in the embodiment described above can also be obtained in other embodiments, descriptions of the operational effects will be omitted as appropriate.

[0182] 37 to 49 are diagrams illustrating an example of a method for manufacturing the organic device 10. FIG.

[0183] As in the case of the above-described embodiment, a structure including a substrate 11, a plurality of lower electrodes 20, a plurality of first partition walls 60, and a plurality of second partition walls 70 is prepared. Subsequently, as shown in FIG. 37, a first resist formation step is performed to form a first resist layer 81. The first resist layer 81 is formed so as to cover the lower electrodes 20 other than the first lower electrode 20A. For example, the first resist layer 81 is formed so as to cover the second lower electrode 20B and the third lower electrode 20C.

[0184] 38, a first organic layer formation step is performed to form a first organic layer 30A on the first lower electrode 20A. The first organic layer 30A may be formed by a vapor deposition method without using a mask. The first organic layer 30A may also be formed on a first resist layer 81.

[0185] 39, a step of forming an eleventh layer 41A of the first upper electrode 40A is performed. The eleventh layer 41A is formed at least on the first organic layer 30A located on the first lower electrode 20A. The eleventh layer 41A may also be formed on the first organic layer 30A located on the first resist layer 81. The eleventh layer 41A may be formed by a vapor deposition method without using a mask.

[0186] Next, as shown in FIG. 40, a first suppression layer forming step is performed to form a first suppression layer 50A. The first suppression layer 50A is formed at least on the 11th layer 41A located on the first organic layer 30A located on the first lower electrode 20A. The first suppression layer 50A may be formed by a vapor deposition method without using a mask. The first suppression layer 50A may also be formed on the 11th layer 41A located on the first organic layer 30A located on the first resist layer 81. The deposition angle of the vapor deposition method for forming the first suppression layer 50A may be smaller than the deposition angle of the vapor deposition method for forming the 11th layer 41A.

[0187] Next, as shown in FIG. 41, a step of forming the 21st layer 42A of the first upper electrode 40A is performed. The 21st layer 42A may be formed by a vapor deposition method without using a mask. The conductive material particles of the 21st layer 42A can move by utilizing the repulsive force from the suppression layer 50. Therefore, the 21st layer 42A is formed in a location where the first suppression layer 50A is not formed. For example, as shown in FIG. 41, the 21st layer 42A is formed to include an end 42e located on the 11th layer 41A and not in contact with the end 50e of the first suppression layer 50A. For example, the 21st layer 42A is formed to include a portion in contact with the 11th layer 41A and a portion in contact with the first side surface of the first portion 71. The first side surface of the first portion 71 is formed of a conductive layer. The twenty-first layer 42A can electrically connect the eleventh layer 41A located on the first organic layer 30A located on the first lower electrode 20A to the conductive layer of the second partition wall .

[0188] 42, a first protective layer forming step is performed to form a first protective layer 55A. The first protective layer 55A may be formed to cover the surfaces of the components on the first surface 111 of the substrate 11. The first protective layer 55A may be formed by chemical vapor deposition, such as chemical vapor deposition.

[0189] 43, a step of removing the first resist layer 81 is performed. The first organic layer 30A, the eleventh layer 41A, the first suppression layer 50A, and the first protective layer 55A located on the first resist layer 81 are also moved away from the substrate 11 together with the first resist layer 81. In this manner, the first organic layer 30A, the first upper electrode 40A, the first suppression layer 50A, and the first protective layer 55A are formed on the first lower electrode 20A. The step of forming the first organic layer 30A, the first upper electrode 40A, the first suppression layer 50A, and the first protective layer 55A on the first lower electrode 20A to obtain the first element 15A is also referred to as a first element formation step.

[0190] Subsequently, a second element formation process is performed to form the second element 15B. In the second element formation process, similarly to the first element formation process, a second organic layer 30B, a second upper electrode 40B, a second suppression layer 50B, and a second protective layer 55B are formed on the second lower electrode 20B.

[0191] 44, a second resist formation step is performed to form a second resist layer 82. The second resist layer 82 is formed so as to cover the lower electrode 20 other than the second lower electrode 20B. For example, the second resist layer 82 is formed so as to cover the first element 15A including the first lower electrode 20A and the third lower electrode 20C.

[0192] 45, a second organic layer forming step is performed to form a second organic layer 30B on the second lower electrode 20B. In the second organic layer forming step, similar to the first organic layer forming step, the second organic layer may be formed by a vapor deposition method without using a mask.

[0193] 45, a step of forming a twelfth layer 41B of the second upper electrode 40B is performed. The twelfth layer 41B is formed at least on the second organic layer 30B located on the second lower electrode 20B. The twelfth layer 41B may be formed by a vapor deposition method without using a mask.

[0194] Next, as shown in FIG. 45, a second suppression layer forming step is performed to form a second suppression layer 50B. The second suppression layer 50B is formed at least on the twelfth layer 41B located on the second organic layer 30B located on the second lower electrode 20B. The second suppression layer 50B may be formed by a vapor deposition method without using a mask. The deposition angle of the vapor deposition method for forming the second suppression layer 50B may be smaller than the deposition angle of the vapor deposition method for forming the twelfth layer 41B.

[0195] Next, as shown in FIG. 45, a step of forming the 22nd layer 42B of the second upper electrode 40B is performed. The 22nd layer 42B may be formed by a vapor deposition method without using a mask. Like the first suppression layer 50A, the second suppression layer 50B is configured to prevent particles of conductive material from adhering to it. Therefore, the 22nd layer 42B is formed in a location where the second suppression layer 50B is not formed. For example, as shown in FIG. 45, the 22nd layer 42B is formed to include an end 42e located on the 12th layer 41B and not in contact with the end 50e of the second suppression layer 50B. For example, the 22nd layer 42B is formed to include a portion in contact with the 12th layer 41B and a portion in contact with the first side surface of the first portion 71.

[0196] 45, a second protective layer forming step is performed to form a second protective layer 55B. Similar to the first protective layer 55A, the second protective layer 55B may be formed to cover the surfaces of the components on the first surface 111 of the substrate 11. The second protective layer 55B may be formed by chemical vapor deposition, such as chemical vapor deposition.

[0197] 46, a step of removing the second resist layer 82 is performed. The second organic layer 30B, the twelfth layer 41B, the second suppression layer 50B, and the second protective layer 55B located on the second resist layer 82 are also moved away from the substrate 11 together with the second resist layer 82. In this manner, the second organic layer 30B, the second upper electrode 40B, the second suppression layer 50B, and the second protective layer 55B are formed on the second lower electrode 20B.

[0198] Subsequently, a third element formation process is performed to form a third element 15C. In the third element formation process, a third organic layer 30C, a third upper electrode 40C, a third suppression layer 50C, and a third protective layer 55C are formed on a third lower electrode 20C, similarly to the second element formation process.

[0199] As shown in FIG. 47, a third resist forming step is performed to form a third resist layer 83. Subsequently, as shown in FIG. 48, a third organic layer forming step is performed to form a third organic layer 30C on the third lower electrode 20C. Subsequently, as shown in FIG. 48, a step of forming a 13th layer 41C of the third upper electrode 40C is performed. Subsequently, as shown in FIG. 48, a third suppressing layer forming step is performed to form a third suppressing layer 50C. Subsequently, as shown in FIG. 48, a step of forming a 23rd layer 42C of the third upper electrode 40C is performed. Subsequently, as shown in FIG. 48, a third protective layer forming step is performed to form a third protective layer 55C. Subsequently, as shown in FIG. 49, a step of removing the third resist layer 83 is performed. In this manner, the third organic layer 30C, the third upper electrode 40C, the third suppressing layer 50C, and the third protective layer 55C are formed on the third lower electrode 20C.

[0200] The concept of each step in the third element formation process shown in Figures 47 to 49 is the same as the concept of each step in the second element formation process shown in Figures 44 to 46. A detailed description of each step in the third element formation process shown in Figures 47 to 49 will be omitted.

[0201] 37 to 49, the first layer 41 and the second layer 42 of the upper electrode 40 can be formed without excessively increasing the deposition angle. Therefore, the second layer 42 can stably electrically connect the conductive layer of the second partition wall 70 and the first layer 41. Furthermore, the organic device 10 can be manufactured using an existing deposition apparatus.

[0202] FIG. 50A is a cross-sectional view showing an example of the configuration of element 15. FIG. 50B is a cross-sectional view showing a portion of element 15 shown in FIG. 50A. The first layer 41 of the upper electrode 40 may include a portion that extends along the upper surface 601 of the first partition 60. On the upper surface 601 of the first partition 60, a portion of the first layer 41 and a portion of the second layer 42 may overlap in the up-down direction D3. Since the first layer 41 and the second layer 42 are more stably connected, the electrical resistance of the upper electrode 40 is stably reduced. The end 41e of the first layer 41 may be in contact with the first side surface 713 of the first portion 71.

[0203] FIG. 51A is a cross-sectional view showing an example of the configuration of element 15. FIG. 51B is a cross-sectional view showing a portion of element 15 shown in FIG. 51A. The first layer 41 of the upper electrode 40 does not have to extend to reach the first partition wall 60. For example, the end 41e of the first layer 41 may be located more inward than the end 30e of the organic layer 30 in a planar view. In other words, the end 41e of the first layer 41 may be located on the organic layer 30. In this case, the first layer 41 and the second layer 42 may be in contact only on the organic layer 30.

[0204] As described above, the particles of the conductive material that make up the second layer 42 can move by utilizing the repulsive force from the suppression layer 50. Therefore, the second layer 42 can expand to reach the first side surface 713 of the first portion 71. The second layer 42 can stably electrically connect the end 41e of the first layer 41 located on the organic layer 30 to the conductive layer of the second partition wall 70.

[0205] Fig. 52 is a cross-sectional view showing an example of the configuration of element 15. The second layer 42 of the upper electrode 40 may be continuous in the up-down direction D3 from the second lower surface 722 of the second portion 72 to the first layer 41. For example, the space between the second lower surface 722 of the second portion 72 and the first partition wall 60 may be filled with the second layer 42. By adjusting conditions such as the vapor deposition time of the second layer 42, for example by increasing the time of the vapor deposition process, the second layer 42 shown in Fig. 52 can be obtained.

[0206] Fig. 53 is a cross-sectional view showing an example of the configuration of element 15. In the example of Fig. 53, similar to the example of Fig. 52, second layer 42 of upper electrode 40 is continuous in the up-down direction D3 from second lower surface 722 of second portion 72 to first layer 41. As shown in Fig. 53, the space between second lower surface 722 of second portion 72 and first partition wall 60 may include a gap where second layer 42 is not formed.

[0207] Fig. 54 is a cross-sectional view showing an example of the configuration of the element 15. The upper electrode 40 may have a continuous layer including a portion in contact with the organic layer 30 and a portion in contact with the conductive layer of the second partition wall 70. The upper electrode 40 shown in Fig. 54 is formed by a single vapor deposition process.

[0208] The upper electrode 40 may comprise a continuous layer including a portion in contact with the organic layer 30, a portion in contact with the first side surface 713 of the first portion 71, and a portion in contact with the second lower surface 722 of the second portion 72. The layer of the upper electrode 40 may also be in contact with the second side surface 723 of the second portion 72.

[0209] The first portion 71 or the second portion 72 includes a conductive layer. For example, the side surface of the first portion 71 is at least partially formed of the conductive layer. The upper electrode 40 is electrically connected to the conductive layer of the first portion 71 or the second portion 72. Since the two upper electrodes 40 of two adjacent elements 15 are electrically connected by the conductive layer of the first portion 71 or the second portion 72, power can be supplied to the two adjacent elements 15, causing them to emit light.

[0210] Each of the elements 15 shown in FIG. 54 may include a lower electrode 20, an organic layer 30, an upper electrode 40, and a protective layer 55. The element 15 shown in FIG. 54 may not include the suppression layer 50. For example, the first element 15A may include a first lower electrode 20A, a first organic layer 30A, a first upper electrode 40A, and a first protective layer 55A, but may not include the first suppression layer 50A. The first suppression layer 50A may be located on the first organic layer 30A located on the second partition wall 70 adjacent to the first element 15A in a planar view.

[0211] A method for manufacturing the organic device 10 shown in FIG. 54 will now be described.

[0212] As in the case of the above-described embodiment, a structure including a substrate 11, a plurality of lower electrodes 20, a plurality of first partitions 60, and a plurality of second partitions 70 is prepared. Subsequently, as shown in FIG. 55, a first organic layer formation step is performed to form a first organic layer 30A. The first organic layer 30A may be formed by a vapor deposition method without using a mask. The first organic layer 30A may be formed on each of the first lower electrode 20A, the second lower electrode 20B, and the third lower electrode 20C. The first organic layer 30A may also be formed on the second partitions 70 located on the first partitions 60. The second partitions 70 located on the first partitions 60 divide the first organic layer 30A.

[0213] Next, as shown in FIG. 56 , a first covering layer formation step is performed to form a first covering layer 84. The first covering layer 84 is formed so as to cover the first organic layer 30A located on the upper sides of the first lower electrode 20A, the second lower electrode 20B, and the third lower electrode 20C. The first covering layer 84 is formed so as not to cover at least a portion of the first organic layer 30A located on the upper side of the second partition wall 70. As shown in FIG. 56 , the first covering layer 84 may not cover at all the first organic layer 30A located on the upper side of the second partition wall 70. In other words, the first covering layer 84 may not be formed on the upper side of the second partition wall 70.

[0214] The coating layer such as the first coating layer 84 includes, for example, a photosensitive resin. By subjecting the coating layer to an exposure process and a development process, the first coating layer 84 is formed to cover the first organic layer 30A located above the first lower electrode 20A, the second lower electrode 20B, and the third lower electrode 20C.

[0215] 57, a first suppression layer formation step is performed to form a first suppression layer 50A. The first suppression layer 50A may be formed on each of the first coating layer 84 and the second portion 72 of the second partition wall 70. When the first organic layer 30A is formed on the second portion 72, the first suppression layer 50A may be formed on the first organic layer 30A located on the second portion 72. The first suppression layer 50A may be formed by a vapor deposition method without using a mask.

[0216] 58, a step of removing the first covering layer 84 is carried out. The first suppression layer 50A located on the first covering layer 84 is also moved away from the substrate 11 together with the first covering layer 84.

[0217] Next, as shown in FIG. 59, a first upper electrode formation process is performed to form the first upper electrode 40A. The first upper electrode 40A may be formed by a vapor deposition method without using a mask. As described above, the first suppression layer 50A is configured to prevent particles of the conductive material that constitute the upper electrode 40, such as the first upper electrode 40A, from adhering to the first suppression layer 50A. The conductive material particles can move by utilizing the repulsive force from the suppression layer 50. The conductive particles can move toward the first organic layer 30A located on the first lower electrode 20A. The conductive particles can also move toward the space below the second lower surface of the second portion 72.

[0218] The first upper electrode 40A is formed in a region where the first suppression layer 50A is not formed. For example, as shown in FIG. 59 , the first upper electrode 40A is formed on the first organic layer 30A, the upper surface of the first partition wall 60, the first side surface of the first portion 71, and the second lower surface of the second portion 72. This results in the first upper electrode 40A being a continuous layer including a portion in contact with the first organic layer 30A on the first lower electrode 20A, a portion in contact with the first side surface of the first portion 71, a portion in contact with the upper surface of the first partition wall 60, and a portion in contact with the second lower surface of the second portion 72. The first upper electrode 40A may also be in contact with the second side surface of the second portion 72.

[0219] 60, a first protective layer formation step is performed to form a first protective layer 55A. The first protective layer 55A may be formed to cover the surfaces of the components on the first surface 111 of the substrate 11. The first protective layer 55A may be formed by chemical vapor deposition, such as chemical vapor deposition.

[0220] 61, a first resist layer formation step is performed to form a first resist layer 81. The first resist layer 81 is formed so as to cover the components of the first element 15A. For example, the first resist layer 81 is formed so as to cover the portion of the first protective layer 55A located above the first lower electrode 20A. The first protective layer 55A located above the second partition wall 70 adjacent to the first lower electrode 20A may be partially covered by the first resist layer 81. The portion of the first protective layer 55A located above the second lower electrode 20B and the portion of the first protective layer 55A located above the third lower electrode 20C may not be covered by the first resist layer 81.

[0221] Subsequently, a step of partially removing the first protective layer 55A is carried out as shown in Fig. 62. The portions of the first protective layer 55A that are not covered with the first resist layer 81 are removed.

[0222] 63, a step of partially removing the first upper electrode 40A and the first organic layer 30A is performed. The portions of the first upper electrode 40A and the first organic layer 30A that are not covered by the first resist layer 81 are removed.

[0223] Subsequently, as shown in Fig. 64, a step of removing the first resist layer 81 is carried out. In this manner, the first organic layer 30A, the first upper electrode 40A, and the first protective layer 55A are formed on the first lower electrode 20A. In the examples shown in Figs. 54 to 84, the step of forming the first organic layer 30A, the first upper electrode 40A, and the first protective layer 55A on the first lower electrode 20A to obtain the first element 15A is referred to as a first element formation step.

[0224] Subsequently, a second element formation process is carried out to form second elements 15B. In the second element formation process, similarly to the first element formation process, a second organic layer 30B, a second upper electrode 40B, and a second protective layer 55B are formed on the second lower electrode 20B.

[0225] As shown in FIG. 65, a second organic layer forming step is performed to form the second organic layer 30B. The second organic layer 30B is formed at least on the second lower electrode 20B. Like the first organic layer 30A, the second organic layer 30B may be formed by a vapor deposition method without using a mask. The second organic layer 30B may also be formed on the first element 15A and the third lower electrode 20C. As in the first organic layer forming step, the second partition 70 located on the first partition 60 divides the second organic layer 30B.

[0226] 66, a second coating layer formation step is carried out to form a second coating layer 85. Similar to the first coating layer 84, the second coating layer 85 is formed so as to cover the second organic layer 30B located above the first lower electrode 20A, the second lower electrode 20B, and the third lower electrode 20C. Similar to the first coating layer 84, the second coating layer 85 is formed so as not to cover at least a portion of the second organic layer 30B located above the second partition wall 70.

[0227] 67, a second suppression layer formation step is performed to form a second suppression layer 50B. Similar to the first suppression layer 50A, the second suppression layer 50B may be formed on each of the second coating layer 85 and the second portion 72 of the second partition wall 70. When the second organic layer 30B is formed on the second portion 72, the second suppression layer 50B may be formed on the second organic layer 30B located on the second portion 72. The second suppression layer 50B may be formed by a vapor deposition method without using a mask.

[0228] 68, a step of removing the second covering layer 85 is carried out. The second suppression layer 50B located on the second covering layer 85 is also moved away from the substrate 11 together with the second covering layer 85.

[0229] Next, as shown in FIG. 69, a second upper electrode formation process is performed to form the second upper electrode 40B. The second upper electrode 40B may be formed by a maskless vapor deposition method, similar to the first upper electrode 40A. The second suppression layer 50B, like the first suppression layer 50A, is configured to prevent particles of conductive material from adhering. Therefore, the second upper electrode 40B is formed in areas where the second suppression layer 50B is not formed. For example, as shown in FIG. 69, the second upper electrode 40B is formed on the second organic layer 30B, the upper surface of the first partition wall 60, the first side surface of the first portion 71, and the second lower surface of the second portion 72. This results in the second upper electrode 40B being a continuous layer, including a portion in contact with the second organic layer 30B, a portion in contact with the first side surface of the first portion 71, a portion in contact with the upper surface of the first partition wall 60, and a portion in contact with the second lower surface of the second portion 72.

[0230] 70, a second protective layer forming step is performed to form a second protective layer 55B. Similar to the first protective layer 55A, the second protective layer 55B may be formed to cover the surfaces of the components on the first surface 111 of the substrate 11. The second protective layer 55B may be formed by chemical vapor deposition, such as chemical vapor deposition.

[0231] 71, a second resist layer formation step is performed to form a second resist layer 82. The second resist layer 82 is formed so as to cover the components of the second element 15B. For example, the second resist layer 82 is formed so as to cover the portion of the second protective layer 55B located above the second lower electrode 20B. The second protective layer 55B located above the second partition wall 70 adjacent to the second lower electrode 20B may be partially covered by the second resist layer 82. The portion of the second protective layer 55B located above the first lower electrode 20A and the portion of the second protective layer 55B located above the third lower electrode 20C may not be covered by the second resist layer 82.

[0232] 72, a step of partially removing the second protective layer 55B is performed. The portions of the second protective layer 55B that are not covered by the second resist layer 82 are removed in the same manner as the first protective layer 55A.

[0233] Subsequently, as shown in FIG. 73, a step of removing the portion of the second upper electrode 40B and the portion of the second organic layer 30B that is not covered with the second resist layer 82 is carried out, similarly to the first element formation step.

[0234] 74, a step of removing the second resist layer 82 is carried out. In this manner, the second organic layer 30B, the second upper electrode 40B, and the second protective layer 55B are formed on the second lower electrode 20B.

[0235] Subsequently, a third element formation process is carried out. In the third element formation process, a third organic layer 30C, a third upper electrode 40C, and a third protective layer 55C are formed on the third lower electrode 20C, similarly to the second element formation process.

[0236] As shown in FIG. 75, a third organic layer forming step is performed to form a third organic layer 30C. Subsequently, as shown in FIG. 76, a third covering layer 86 is formed. Subsequently, as shown in FIG. 77, a third suppressing layer forming step is performed to form a third suppressing layer 50C. Subsequently, as shown in FIG. 78, a third covering layer 86 is removed. Subsequently, as shown in FIG. 79, a third upper electrode 40C is formed. Subsequently, as shown in FIG. 80, a third protective layer forming step is performed to form a third protective layer 55C. Subsequently, as shown in FIG. 81, a third resist layer forming step is performed to form a third resist layer 83. Subsequently, as shown in FIG. 82, a step of partially removing the third protective layer 55C is performed. Subsequently, as shown in FIG. 83, a step of removing the portions of the third upper electrode 40C and the third organic layer 30C that are not covered by the third resist layer 83 is performed. Subsequently, as shown in FIG. 84, a step of removing the third resist layer 83 is performed. In this manner, the third organic layer 30C, the third upper electrode 40C, and the third protective layer 55C are formed on the third lower electrode 20C.

[0237] The concept of each step of the third element formation process shown in Figures 75 to 84 is the same as the concept of each step of the second element formation process shown in Figures 65 to 74. Detailed description of each step of the third element formation process shown in Figures 75 to 84 will be omitted.

[0238] By carrying out the first element forming step, the second element forming step, and the third element forming step, an organic device 10 including a first element 15A, a second element 15B, and a third element 15C is obtained as shown in FIG.

[0239] 55 to 84, the upper electrode 40 can be stably electrically connected to the second partition wall 70 without excessively increasing the deposition angle. Furthermore, the organic device 10 can be manufactured using an existing deposition apparatus.

[0240] 85 is a cross-sectional view showing an example of the configuration of the second partition 70. The second side surface 723 of the second portion 72 may include a portion whose width decreases toward the upper side. An organic layer 30 such as the first organic layer 30A may also be located on the second side surface 723 of the second portion 72.

[0241] An example of a method for forming the second partition wall 70 shown in Fig. 85 will be described. Similar to the example shown in Fig. 8 above, a conductive layer 75 and a first insulating layer 76 are formed on the substrate 11. Then, similar to the example shown in Fig. 9 above, a plurality of resist layers 80 are formed on the first insulating layer 76.

[0242] 86, a step of etching the first insulating layer 76 is performed. The etching of the first insulating layer 76 may be isotropic dry etching. In isotropic dry etching, the portion of the first insulating layer 76 closer to the resist layer 80 in the vertical direction D3 is etched more than the portion of the first insulating layer 76 farther from the resist layer 80.

[0243] After the resist layer 80 is removed, a step of etching the conductive layer 75 is performed as shown in Fig. 87. A second partition wall 70 including a first portion 71 including the conductive layer 75 and a second portion 72 including the first insulating layer 76 is obtained.

[0244] Since the first insulating layer 76 of the second portion 72 is formed by isotropic etching, the width W21 of the second upper surface 721 of the second portion 72 is smaller than the width W22 of the second lower surface 722 of the second portion 72. The second side surface of the second portion 72 may include a portion whose width decreases upward.

[0245] 88 is a cross-sectional view showing an example of the configuration of the second partition wall 70. The conductive layer 75 may be included in the second portion 72. For example, the second portion 72 may include a first insulating layer 76 and a conductive layer 75 located between the first insulating layer 76 and the first portion 71. The first portion 71 may include a second insulating layer 77. The width of the first insulating layer 76 and the width of the conductive layer 75 are both larger than the width of the second insulating layer 77.

[0246] An example of a method for manufacturing the second partition wall 70 shown in Fig. 88 will be described. As shown in Fig. 89, a second insulating layer 77, a conductive layer 75, and a first insulating layer 76 are formed in this order on the plurality of lower electrodes 20 and the plurality of first partition walls 60. Then, as shown in Fig. 90, a plurality of resist layers 80A are formed on the first insulating layer 76.

[0247] Next, as shown in FIG. 91, a step of etching the first insulating layer 76 is performed. The etching of the first insulating layer 76 may be isotropic dry etching. In isotropic dry etching, a portion of the first insulating layer 76 closer to the resist layer 80A in the vertical direction D3 is etched to a greater extent than a portion of the first insulating layer 76 farther from the resist layer 80A. Although not shown, the etching of the first insulating layer 76 may be anisotropic dry etching. In anisotropic dry etching, the etching reaction proceeds preferentially in the vertical direction D3.

[0248] After the resist layer 80A is removed, a step of etching the conductive layer 75 is carried out as shown in Fig. 92. The etching of the conductive layer 75 may be wet etching using an etching liquid.

[0249] Next, as shown in FIG. 93, a resist layer 80B is formed on each of the plurality of first insulating layers 76. Next, as shown in FIG. 94, a step of etching the second insulating layer 77 is performed. The etching of the second insulating layer 77 may be isotropic dry etching. In isotropic dry etching, a portion of the second insulating layer 77 closer to the resist layer 80B in the vertical direction D3 is etched to a greater extent than a portion of the second insulating layer 77 farther from the resist layer 80B. Although not shown, the etching of the second insulating layer 77 may be anisotropic dry etching. In anisotropic dry etching, the etching reaction proceeds preferentially in the vertical direction D3.

[0250] 95, the resist layer 80B is removed, resulting in a second partition wall 70 including the second portion 72 including the conductive layer 75 and the first insulating layer 76, and the first portion 71 including the second insulating layer 77.

[0251] 96 is a cross-sectional view showing an example of the configuration of the second partition 70. The first portion 71 may include a conductive layer 75 and a second insulating layer 77 located between the conductive layer 75 and the first partition 60. The second portion 72 may include a first insulating layer 76. The width of the first insulating layer 76 is greater than the width of the conductive layer 75 and the width of the second insulating layer 77.

[0252] An example of a method for manufacturing the second partition wall 70 shown in Fig. 96 will be described. As in the example shown in Figs. 89 to 91, as shown in Fig. 97, the first insulating layer 76 located on the conductive layer 75 located on the second insulating layer 77 is partially etched. Subsequently, as shown in Fig. 98, the conductive layer 75 is etched so that the width of the conductive layer 75 becomes smaller than the width of the first insulating layer 76. The etching of the conductive layer 75 may be wet etching using an etching solution.

[0253] Next, as shown in Fig. 99, a resist layer 80B is formed on each of the plurality of first insulating layers 76. Next, as shown in Fig. 99, a step of etching the second insulating layer 77 is carried out. The second insulating layer 77 is etched so that the width of the second insulating layer 77 becomes smaller than the width of the first insulating layer 76. The etching of the second insulating layer 77 may be isotropic dry etching.

[0254] 100, the resist layer 80B is removed, resulting in a second partition wall 70 including a first portion 71 including the conductive layer 75 and the second insulating layer 77, and a second portion 72 including the first insulating layer 76.

[0255] Fig. 101 is a cross-sectional view showing an example of the configuration of the first partition 60 and the second partition 70. In the example shown in Fig. 101, the first partition 60, not the second partition 70, includes a conductive layer.

[0256] 101, the second partition 70 may include a second portion 72 including a first insulating layer 76 and a first portion 71 including a second insulating layer 77. The first partition 60 may include an insulating layer 63 and a conductive layer 64. An upper surface 601 of the first partition 60 is at least partially constituted by the conductive layer 64.

[0257] The second layer 42 includes a portion in contact with the first layer 41 and a portion in contact with the conductive layer 64 located on the upper surface 601 of the first partition wall 60. The second layer 42 can electrically connect the first layer 41 and the conductive layer 64 of the first partition wall 60.

[0258] 102 is a plan view showing an example of an organic device 10. The second partition 70 may be located between two elements 15 of the same type that are adjacent in plan view. For example, the second partition 70 may be located on each of the multiple twelfth partitions 62. In this case, the second partition 70 separates each of the two organic layers 30 of the two elements 15 of the same type that are adjacent in plan view.

[0259] The second partition 70 may be located between two elements 15 of different types that are adjacent in a plan view, and may also be located between two elements 15 of the same type that are adjacent in a plan view. For example, the second partition 70 may be located above each of the eleventh partitions 61 and above each of the twelfth partitions 62.

Claims

1. An organic device comprising: A substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition wall located between the first lower electrode and the second lower electrode in a plan view; an organic layer including at least a first organic layer located on the first lower electrode and a second organic layer located on the second lower electrode; an upper electrode including at least a first upper electrode including a portion located on the first organic layer and a second upper electrode including a portion located on the second organic layer; a second partition wall, which is located between the first organic layer and the second organic layer in a plan view and includes a first portion located on the first partition wall and a second portion located on the first portion and having a width larger than a width of the first portion; an inhibiting layer located on the upper electrode on the organic layer or on the second portion of the second partition wall, the inhibiting layer including a polycyclic aromatic compound; the first partition wall or the second partition wall includes a conductive layer, The organic device, wherein the first upper electrode and the second upper electrode are in contact with the conductive layer.

2. the first upper electrode includes a first layer including a portion located on the first organic layer, and a second layer including a portion in contact with the first layer and a portion in contact with the conductive layer; the suppression layer includes a first suppression layer located on the first layer of the first upper electrode; The organic device according to claim 1 , wherein the first suppression layer includes an end portion located more inward than an end portion of the first layer of the first upper electrode in a plan view.

3. The organic device according to claim 2 , wherein the edge of the first layer of the first upper electrode is located outside an edge of the first organic layer in a plan view.

4. The organic device according to claim 3 , wherein the end of the first layer of the first upper electrode is located on the first partition wall.

5. The organic device according to claim 2 , wherein the end of the first layer of the first upper electrode is located inside an end of the first organic layer in a plan view.

6. 6. The organic device according to claim 2, wherein the second layer of the first upper electrode is in contact with a side surface of the first portion of the second partition and a lower surface of the second portion.

7. The organic device according to claim 6 , wherein the second layer of the first upper electrode is continuous in the vertical direction from the lower surface of the second portion to the first layer.

8. the suppression layer is located on the second portion of the second partition wall; The organic device of claim 1 , wherein the first upper electrode comprises a continuous layer including a portion in contact with the first organic layer and a portion in contact with a conductive layer.

9. the first portion of the second partition wall includes the conductive layer, The organic device according to claim 1 , wherein the second portion of the second partition wall includes a first insulating layer.

10. the second portion of the second partition wall includes a first insulating layer and the conductive layer located between the first insulating layer and the first portion, The organic device according to claim 1 , wherein the first portion of the second partition wall includes a second insulating layer.

11. the second portion of the second partition wall includes a first insulating layer; 6. The organic device according to claim 1, wherein the first portion of the second partition includes the conductive layer and a second insulating layer located between the conductive layer and the first partition.

12. the second portion of the second partition wall includes a first insulating layer; the first portion of the second partition wall includes a second insulating layer; 6. The organic device according to claim 1, wherein the first partition includes the conductive layer that partially constitutes an upper surface of the first partition.

13. The suppression layer includes a biphenylyl moiety represented by any one of the following chemical structures (1-a), (1-b), and (1-c): 【Chemistry 1】 The substituents Ra and Rb are each deuterium, fluorine, or C. １ ~C ４ The organic device of any one of claims 1 to 5, comprising alkyl, including alkyl, cycloalkyl, arylalkyl, silyl, aryl, heteroaryl, or fluoroalkyl.

14. A method for manufacturing an organic device, comprising: preparing a structure including: a substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition located between the first lower electrode and the second lower electrode in a plan view; and a second partition including a first portion located on the first partition and a second portion located on the first portion and having a width greater than a width of the first portion; a first organic layer forming step of forming a first organic layer on the first lower electrode and the second lower electrode; forming a first layer of a first upper electrode on the first organic layer; a first inhibiting layer forming step of forming a first inhibiting layer on the first layer on the first organic layer; forming a second layer of the first upper electrode by vapor deposition; a first organic layer removing step of removing the first organic layer on the second lower electrode, the first suppression layer is configured to prevent the second layer from adhering thereto; the first partition wall or the second partition wall includes a conductive layer, The second layer of the first upper electrode includes a portion in contact with the first layer and a portion in contact with the conductive layer.

15. a second organic layer forming step of forming a second organic layer on the second lower electrode; forming a first layer of a second upper electrode on the second organic layer; a second inhibiting layer forming step of forming a second inhibiting layer on the first layer on the second organic layer; forming a second layer of the second upper electrode by vapor deposition; The method for manufacturing an organic device according to claim 14 , wherein the second layer of the second upper electrode includes a portion in contact with the first layer of the second upper electrode and a portion in contact with the conductive layer.

16. A method for manufacturing an organic device, comprising: preparing a structure including: a substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition located between the first lower electrode and the second lower electrode in a plan view; and a second partition including a first portion located on the first partition and a second portion located on the first portion and having a width greater than a width of the first portion; a first resist forming step of forming a first resist covering the second lower electrode; a first organic layer forming step of forming a first organic layer on the first lower electrode; forming a first layer of a first upper electrode on the first organic layer; a first inhibiting layer forming step of forming a first inhibiting layer on the first layer on the first organic layer; forming a second layer of the first upper electrode by vapor deposition; a first resist removal step of removing the first resist, the first suppression layer is configured to prevent the second layer from adhering thereto; the first partition wall or the second partition wall includes a conductive layer, The second layer of the first upper electrode includes a portion in contact with the first layer and a portion in contact with the conductive layer.

17. a second resist forming step of forming a second resist on an upper side of the first lower electrode; a second organic layer forming step of forming a second organic layer on the second lower electrode; forming a first layer of a second upper electrode on the second organic layer; a second inhibiting layer forming step of forming a second inhibiting layer on the first layer on the second organic layer; forming a second layer of the second upper electrode by vapor deposition; a second resist removal step of removing the second resist, The method for manufacturing an organic device according to claim 16 , wherein the second layer of the second upper electrode includes a portion in contact with the first layer of the second upper electrode and a portion in contact with the conductive layer.

18. A method for manufacturing an organic device, comprising: preparing a structure including: a substrate; a lower electrode including at least a first lower electrode and a second lower electrode located on the substrate; a first partition located between the first lower electrode and the second lower electrode in a plan view; and a second partition including a first portion located on the first partition and a second portion located on the first portion and having a width greater than a width of the first portion; a first organic layer forming step of forming a first organic layer on the first lower electrode and the second lower electrode; a first suppression layer forming step of forming a first suppression layer on the second portion of the second partition wall; forming a first upper electrode by vapor deposition; a first organic layer removing step of removing the first organic layer on the second lower electrode, the first suppression layer is configured to prevent adhesion of the first upper electrode; the first partition wall or the second partition wall includes a conductive layer, The method for manufacturing an organic device, wherein the first upper electrode comprises a continuous layer including a portion in contact with the first organic layer and a portion in contact with a conductive layer.

19. a second organic layer forming step of forming a second organic layer on the second lower electrode; a second suppression layer forming step of forming a second suppression layer on the second portion of the second partition wall; forming a second upper electrode by vapor deposition; the second suppression layer is configured to prevent the second upper electrode from adhering thereto; 20. The method of claim 18, wherein the second upper electrode comprises a continuous layer including a portion in contact with the second organic layer and a portion in contact with a conductive layer.

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