Semiconductor device

Abstract

To provide a new input / output panel having excellent convenience and reliability.SOLUTION: The present invention relates to an input-output panel having a gate wire, a first electrode, a second electrode, a current detection circuit, and a pixel. The first electrode is electrically connected to the gate wire. The second electrode intersects with the gate wire and forms capacitance with the first electrode. The current detection circuit is electrically connected to the second electrode and has a function of detecting change of the capacitance. The pixel has a transistor and a display element. The transistor has a gate electrode, a source electrode, and a drain electrode. The gate electrode is electrically connected to the gate wire. The display element has a third electrode and a liquid crystal material. The third electrode is electrically connected to the source electrode and the drain electrode.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an input / output panel, a semiconductor device, and a driving method.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the invention disclosed herein more specifically relates to The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, Examples include their driving methods and their manufacturing methods. [Background technology]

[0003] The common electrode for display originally provided in the liquid crystal display element is replaced with a pair of electrodes for the touch sensor. One of the electrodes (drive electrode) is used as the other electrode (detection electrode for the sensor) and is newly formed. In addition, the existing common drive signal as a display drive signal is used as a touch sensor drive signal. A configuration in which the same device is shared by other devices is known (Patent Document 1).

[0004] Touch signal lines such as drive and sense lines and ground regions in the display pixel stackup and other circuit elements are grouped together to form a touch sensitive display on or near the display. A configuration for forming a switch sensing circuit is known (Patent Document 2). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-244958 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-197685 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one aspect of the present invention is to provide a novel input / output panel that is highly convenient and reliable. The object of the present invention is to provide a novel input / output panel or a novel semiconductor device. This is one of the topics.

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0008] (1) An input / output panel of one embodiment of the present invention includes a gate wiring, a first electrode, a second electrode, and The pixel includes a current detection circuit and a first electrode electrically connected to a gate line. The second electrode is disposed so as to intersect with the gate wiring and form a capacitance between the second electrode and the first electrode. The current detection circuit is electrically connected to the second electrode and has a function of detecting a change in capacitance. The pixel includes a transistor and a display element. The transistor includes a gate electrode, a The gate electrode is electrically connected to the gate wiring. The display element comprises a third electrode and a liquid crystal material. The third electrode is a source electrode or a drain electrode. The electrode is electrically connected to the gate electrode.

[0009] (2) In the above configuration, the third electrode controls the alignment of the liquid crystal material between the third electrode and the second electrode. It is preferable that they are arranged to form an electric field.

[0010] (3) In each of the above configurations, the third electrode is sandwiched between the liquid crystal material and the second electrode. It is preferable to have a region.

[0011] (4) In each of the above configurations, the display element has a fourth electrode, and the third electrode is The fourth electrode is disposed between the first electrode and the second electrode to form an electric field that controls the orientation of the liquid crystal material. It is preferable that the signal line is electrically connected to a wiring that provides a potential.

[0012] (5) In each of the above configurations, the third electrode is sandwiched between the liquid crystal material and the fourth electrode. It is preferable to have a region.

[0013] (6) In each of the above configurations, the first electrode contains the same material as the third electrode, and the second electrode contains the same material as the third electrode. The second electrode preferably comprises the same material as the fourth electrode.

[0014] (7) In each of the above configurations, a backlight is provided, and either the second electrode or the third electrode is provided. Either one or both have a reflectance of 5 for light with a wavelength in the range of 400 nm or more but less than 800 nm. % or more and less than 100%, and the transmittance is 1% or more and less than 95%, and the backlight is It is preferable that the layer containing the liquid crystal material can be irradiated with light.

[0015] (8) In each of the above configurations, a backlight is provided, and either the third electrode or the fourth electrode is provided. Either one or both have a reflectance of 5 for light with a wavelength in the range of 400 nm or more but less than 800 nm. % or more and less than 100%, and the transmittance is 1% or more and less than 95%, and the backlight is It is preferable that the layer containing the liquid crystal material can be irradiated with light.

[0016] (9) An input / output panel of one embodiment of the present invention includes a gate wiring, a first electrode, a second electrode, and The pixel includes a current detection circuit and a first electrode electrically connected to a gate line. The second electrode is disposed so as to intersect with the gate wiring and form a capacitance between the second electrode and the first electrode. The current detection circuit is electrically connected to the second electrode and has a function of detecting a change in capacitance. The pixel includes a first transistor, a second transistor, and a light-emitting element. The first transistor has a first gate electrode, a first source electrode, and a first drain electrode. The second transistor has a second gate electrode, a second source electrode, and a second drain electrode. The first gate electrode is electrically connected to the gate wiring. The source electrode or the first drain electrode is electrically connected to the second gate electrode. The source electrode or the second drain electrode has a function of supplying power to drive the light-emitting element. .

[0017] (10) The semiconductor device of one embodiment of the present invention is a device for use in a keyboard, a hardware button, a pointing device, and the like. touch sensor, illuminance sensor, imaging device, voice input device, viewpoint input device, posture and the input / output panel.

[0018] (11) A method for driving an input / output panel according to one embodiment of the present invention includes: The pixel has a driving method of an input / output panel electrically connected to the gate wiring and the signal line. In the method, a video signal is supplied to a signal line during a period in which a selection signal is supplied to a gate line. and detects an object to be detected that is close to the gate wiring.

[0019] (12) A method for driving an input / output panel according to one embodiment of the present invention includes: , and the pixel is electrically connected to the gate wiring and the signal line, and the pixel includes a display element. The method for driving an input / output panel includes a first period, a second period, a third period, and a third period. In the second period, a predetermined voltage is supplied to the signal line, and in the second period, all the gate wirings are connected to the selection signal line. A selection signal is supplied to each of the gate wirings in a predetermined order so that a signal is supplied to the gate wirings. In the third period, all the gate wirings are connected to the selection signal line. A selection signal is supplied to the gate wiring in a predetermined order so that a video signal is supplied. Supply to the line.

[0020] (13) A method for driving an input / output panel according to one embodiment of the present invention includes: , and the pixel is electrically connected to the gate wiring and the signal line, and the pixel includes a display element. The method for driving an input / output panel includes a first period, a second period, a third period, and a third period. In the second period, a predetermined voltage is supplied to the signal line, and in the second period, all the gate wirings are connected to the selection signal line. supplying a selection signal to each group of adjacent gate wirings in a predetermined order so that the selection signal is supplied to each group of adjacent gate wirings; The object to be detected is located close to a group of adjacent gate wirings. In the third period, supplying the selection signals to the gate wirings in a predetermined order so that the gate wirings are supplied with the selection signals; A video signal is supplied to the signal line.

[0021] (14) A method for driving an input / output panel according to one embodiment of the present invention includes: a second display area adjacent to the first display area, the first display area including a group of games; the first display area comprises a group of gate lines and signal lines, and the second display area comprises another group of gate lines and signal lines. A driving method for an input / output panel, the method comprising: a first period to a sixth period; In the second period, a predetermined voltage is supplied to the signal line, and a selection signal is applied to a group of gate wirings. is supplied to detect an object to be detected that is close to a group of gate wirings, and in a third period, A selection signal is sent from a group of gate wirings in a predetermined order so that the gate wirings are supplied with the selection signal. In the fourth period, a video signal is supplied to the signal line by selecting one of the signals from the first period and supplying it to the signal line. In the fifth period, a selection signal is supplied to another group of gate wirings, and in the sixth period, a selection signal is supplied to another group of gate wirings. In the sixth period, the object to be detected is detected in the vicinity of the group of gate wirings. The gate wiring is supplied with a selection signal in a predetermined order from another group of gate wirings. The video signal is supplied to the signal line by selecting one of the signals from the input terminals one by one.

[0022] In this specification, the source and drain of a transistor are used to indicate the polarity and The name changes depending on the level of the potential applied to the terminal. Generally, n-channel In a transistor with a low potential, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the The terminal to which the transistor is connected is called the drain. The terminal to which a high potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. For convenience, let us assume that the source and drain are fixed. However, in reality, the source and drain are connected according to the above potential relationship. The way they are handled changes.

[0023] In this specification, the source of a transistor refers to a source region that is a part of a semiconductor film, or The source electrode connected to the semiconductor film is called the drain electrode of a transistor. a drain region that is a part of the semiconductor film, or a drain electrode that is connected to the semiconductor film; The term "gate" refers to a gate electrode.

[0024] In this specification, the state in which transistors are connected in series means, for example, Only one of the source or drain of one transistor is connected to the source or drain of the second transistor. It also means that the transistors are connected in parallel. The state where either the source or drain of the first transistor is connected to the second transistor and the source or drain of the first transistor is connected to one of the source and drain of the second transistor. The other of the two transistors is connected to the other of the source or drain of the second transistor. do.

[0025] In this specification, connection means an electrical connection, and a current, voltage, or potential is supplied. Therefore, the connected state corresponds to the state where the signal can be supplied or transmitted. does not necessarily refer to the state in which a current, voltage, or potential is available or transferable. The signals are transmitted through circuit elements such as wires, resistors, diodes, and transistors. This also includes the state of being directly connected.

[0026] In this specification, when components that are independent on the circuit diagram are connected to each other, However, in reality, for example, when a part of the wiring functions as an electrode, one conductive film may be connected to multiple In this specification, the term "connection" refers to such a Cases in which one conductive film has the functions of multiple components are also included in this category.

[0027] In this specification, either the first electrode or the second electrode of a transistor is a source the other refers to the drain electrode. [Effects of the Invention]

[0028] According to one aspect of the present invention, it is possible to provide a novel input / output panel that is highly convenient and reliable. Alternatively, a novel input / output panel or a novel semiconductor device can be provided.

[0029] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0030] [Figure 1] FIG. 2 is a circuit diagram illustrating a configuration of an input / output panel according to an embodiment. [Figure 2] FIG. 2 is a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 3] 1A and 1B are a cross-sectional view and a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 4] 1A and 1B are a cross-sectional view and a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 5] 1A and 1B are a schematic diagram showing the configuration of a mutual capacitance touch sensor according to an embodiment, a schematic diagram of input / output waveforms, and a configuration example of a touch sensor having a plurality of capacitors arranged in a matrix. [Figure 6]1A and 1B are a cross-sectional view and a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 7] 1A and 1B are a cross-sectional view and a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 8] 1A and 1B are a cross-sectional view and a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 9] 3A and 3B are a block diagram of wiring according to an embodiment and a timing chart of input and output waveforms. [Figure 10] 4 is a timing chart of input and output waveforms according to the embodiment. [Figure 11] 4 is a timing chart of input and output waveforms according to the embodiment. [Figure 12] 4 is a timing chart of input and output waveforms according to the embodiment. [Figure 13] 4 is a timing chart of input and output waveforms according to the embodiment. [Figure 14] FIG. 2 is a block diagram of wiring of the touch panel according to the embodiment. [Figure 15] 1A and 1B are a cross-sectional view and a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 16] 1A and 1B are a cross-sectional view and a plan view illustrating a configuration of an input / output panel according to an embodiment. [Figure 17] 1A and 1B are a cross-sectional view and a circuit diagram illustrating a structure of an input / output panel according to an embodiment. [Figure 18] 1A and 1B are cross-sectional views illustrating a configuration of an input / output panel according to an embodiment. [Figure 19] 1A to 1C illustrate electronic devices each having an input / output panel according to an embodiment. [Figure 20] 1A to 1C illustrate electronic devices each having an input / output panel according to an embodiment. [Figure 21] 1A to 1C illustrate a structure of a transistor that can be used for an input / output panel according to an embodiment. [Figure 22] 1A to 1C illustrate a structure of a transistor that can be used for an input / output panel according to an embodiment. [Figure 23] 1A to 1C illustrate electronic devices each having an input / output panel according to an embodiment. [Figure 24] FIG. 2 is a circuit diagram of a touch sensor according to the embodiment. [Figure 25] 1A and 1B are a block diagram and a timing chart of a display device according to an embodiment. [Figure 26] 1A to 1C illustrate operations of a display device and a touch sensor according to an embodiment. [Figure 27] 1A to 1C illustrate operations of a display device and a touch sensor according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0031] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various forms and details without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. It should not be construed as being limited to the contents of the description of the state.

[0032] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0033] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area is not clearly indicated. The figures may be exaggerated for clarity and are not necessarily limited to that scale. .

[0034] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limit.

[0035] In this specification, metal oxide is a broad term referring to metal oxides. Metal oxides are oxides. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called "OS"), For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, metal oxides have amplifying, rectifying, and and switching action, the metal oxide is called a metal oxide semiconductor. Conductor (metal oxide semiconductor), abbreviated as OS In addition, when describing OSFET, it is possible to use a metal oxide or oxide semiconductor. In other words, it is a transistor having a body.

[0036] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). It may also be called hydroxybenzoxanthate (hydroxybenzoxanthate).

[0037] In this specification, CAAC (c-axis aligned crystal ), and CAC (cloud-aligned composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. Represents.

[0038] In this specification and the like, CAC-OS or CAC-metal oxide means A part of the material has a conductive function, and a part of the material has an insulating function, and the whole material It functions as a semiconductor. When e is used in the active layer of a transistor, the conductive function is to transfer electrons (or The insulating function is the function of not allowing the flow of electrons, which are carriers. By making the conductive function and insulating function work in a complementary manner, The function to turn the sync on / off can be set to CAC-OS or CAC-metal. CAC-OS or CAC-metal oxide By separating the functions in e, it is possible to maximize the functionality of both. Cut.

[0039] In this specification and the like, CAC-OS or CAC-metal oxide is a The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. The region has the insulating function described above. In addition, the material has a conductive region and an insulating region. The regions may be separated at the nanoparticle level. The conductive regions may be unevenly distributed in the material. They may be observed connected in a similar manner.

[0040] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0041] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is used for the channel region of the transistor. When the transistor is turned on, the transistor has a high current driving capability, i.e., a large on-state current. High field effect mobility can be obtained.

[0042] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0043] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents of the description. The same reference numerals are used in different drawings to denote the same parts or parts having similar functions. A repeated explanation will be omitted.

[0044] (Embodiment 1) In this embodiment, a detection object that can be applied to the input / output panel of one embodiment of the present invention will be described. This section explains an example of the configuration of a sensor that can detect proximity or contact (hereafter referred to as a touch sensor). The input / output panel of one embodiment of the present invention includes a display element.

[0045] The touch sensor of one embodiment of the present invention uses a capacitive touch sensor. Typical examples of such methods include surface capacitive touch panels and projected capacitive touch panels. There are two types of capacitance sensors, self-capacitance and mutual capacitance, which differ mainly in their driving methods. Here, if the mutual capacitance method is used, it is possible to detect multiple points simultaneously (multipoint detection). This is preferable because it allows for touch (also called touch).

[0046] An input / output panel according to one embodiment of the present invention includes a capacitive sensor. The capacitor has a pair of electrodes, and a capacitance is formed between the pair of electrodes. One of them is a sensor electrode, which is connected to the gate wiring. The port wiring has a function of supplying a selection signal.

[0047] The other of the pair of electrodes intersects with the gate wiring.

[0048] In one aspect of the present invention, for example, the other electrode is separated from the electrode of the display element. In addition, in one embodiment of the present invention, the other electrode is a display element. This configuration will be explained with reference to FIG. 1(B).

[0049] 1A and 1B are circuit diagrams of a pixel portion of an input / output panel of one embodiment of the present invention. An input / output panel according to one embodiment of the present invention includes a display element, and the display element includes a layer containing a liquid crystal material. The input / output panel of one embodiment of the present invention includes a pixel portion. 13, a capacitance section 3514, a capacitance type sensor section 3515, and a gate electrode 3516, A gate wiring 3517, a contact region 3518, a source wiring 3519, and a transistor The pixel portion has a common electrode 3522 and a sensor electrode 3529. and a pixel electrode 3523. The common electrode 3522 is a A common potential is supplied to the pixel electrode 3523. The pixel electrode 3523 is electrically connected to the transistor 3521. The transistor 3521 receives a signal from the source wiring 3519 based on a selection signal. A signal can be supplied to the pixel electrode 3523. The source wiring 3519 is also simply called a signal line.

[0050] In the contact region 3518, the sensor electrode 3529 is electrically connected to the gate wiring 3517. The gate electrode 3516 is electrically connected to a gate wiring 3517. That is, the gate wiring 3517 functions as an auxiliary wiring for the sensor electrode 3529. The wiring functions as a wiring for supplying a selection signal for driving the transistor 3521 .

[0051] The common electrode 3522 has a region parallel to the source wiring 3519. In FIG. 1B, the row direction is the direction indicated by arrow R, and the column direction is the direction indicated by arrow C. do.

[0052] The liquid crystal element 3513 includes a common electrode 3522 and a pixel electrode 3523. The electrode 3522 and pixel electrode 3523 are used to vary the electric field in the layer containing the liquid crystal material. It is possible.

[0053] The pixel portion also includes a capacitor portion 3514. The capacitor portion 3514 can store electric charges. As a result, the period until the next gate wiring 3517 is selected (including one frame period) This allows the voltage required for display of the liquid crystal element 3513 to be maintained. The voltage between the conducting electrode 3522 and the pixel electrode 3523 can be maintained. Of the two electrodes provided in the pixel electrode 3523, the electrode not electrically connected to the pixel electrode 3523 is connected to a common In this specification, the capacitive portion 3514 may be omitted from the illustration. .

[0054] Here, the input / output panel explained using the circuit diagram of FIG. 1(A) has a sensor electrode 3527. The sensor electrode 3527 is separated from the common electrode 3522.

[0055] The capacitance type sensor unit 3515 includes a sensor electrode 3529 and a sensor electrode 3527. The touch sensor according to one aspect of the present invention generates a sensor voltage when a finger, a stylus pen, or the like approaches. The change in capacitance between the electrode 3529 and the sensor electrode 3527 can be read. The electrode 3527 is supplied with a common potential or a floating potential.

[0056] The sensor electrode 3527 has an area parallel to the source wiring 3519. Auxiliary wiring may be provided to 3527.

[0057] On the other hand, the input / output panel explained using the circuit diagram of FIG. 1(B) does not have a sensor electrode 3527. This is different from the input / output panel described using Figure 1(A) in that it does not have a capacitance sensor. 3515 includes a sensor electrode 3529 and a common electrode 3522. When a finger or a stylus pen approaches, the touch sensor detects the sensor electrode 3529 and the common The change in capacitance between the poles 3522 can be read.

[0058] FIG. 2(A) is a plan view in which the structure of wiring and the like is superimposed on the circuit diagram shown in FIG. 1(A). FIG. 1B) is a plan view in which the structure of wiring and the like is superimposed on the circuit diagram shown in FIG. 1B. For convenience, these plan views may include parts that are different in size and shape from the actual parts. For convenience of explanation, some of the wirings and the transistor 3521 are indicated by symbols. In FIG. 2(A) and FIG. 2(B), the common electrode 3522 or the pixel electrode 3523 is not overlapped. The transistor 3521 is shown, but the transistor 3521 may be connected to a common electrode 3522 or a pixel It may be arranged at a position overlapping with the electrode 3523. It may be arranged in the same way in other plan views. do.

[0059] The input / output panel explained using FIG. 2(A) and the input / output panel explained using FIG. 2(B) Each of the lines includes a gate wiring 3517, a common electrode 3522, a pixel electrode 3523, and a sensor electrode 3529 and contact region 3518. In both figures, the capacitance section The input / output panel 3514 is omitted from the illustration. It is provided with a sensor electrode 3527.

[0060] The input / output panel explained using FIG. 2(A) and the input / output panel explained using FIG. 2(B) In each of the modules, the common electrode 3522 is connected to the gate wiring 3517 and the sensor electrode 3529. It has an area sandwiched between them.

[0061] The input / output panel explained using FIG. 2(A) and the input / output panel explained using FIG. 2(B) In both cases, the pixel electrode 3523 and the sensor electrode 3529 contain the same material. This allows the pixel electrode 3523 and the sensor electrode 3529 to be formed in the same process. In addition, the input / output panel described with reference to FIG. 2(A) has a common electrode 3522 and a sensor The common electrode 3522 and the sub-electrode 3527 are made of the same material. The capacitor electrode 3527 can be formed in the same process.

[0062] An auxiliary wiring can be provided in the common electrode 3522. This reduces wiring resistance. Alternatively, the pixels can be made smaller.

[0063] Also, the solenoid is placed so as to overlap with an electrode to which a common potential or a floating potential is applied. A source wiring 3519 may be arranged. This allows, for example, the sensor electrode or the detected object ( Specifically, the influence of noise from fingers, etc. can be reduced. This reduces the impact on the video signal supplied by the 3519.

[0064] The input / output panel of the present invention may be formed with the circuit shown in FIG. 1(A) or FIG. 1(B). For example, the gate wiring 3 is formed in the order from the side closest to the substrate. 517, then the sensor electrode 3529, and then the common electrode 3522 may be formed. The pixel electrode 3523 may be made of a material different from that of the sensor electrode 3529. The common electrode 3522 may be made of a material different from that of the sensor electrode 3527. .

[0065] Configuration example 1 The input / output panel described using the circuit diagram shown in FIG. 1A has a sensor electrode 3527. The sensor electrode 3527 is separated from the common electrode 3522. The structure of a part of the pixel of the panel 3551 will be explained using a cross-sectional view showing the structure of the pixel (FIG. 3(A)). The input / output panel 3551 has a layer 3524 containing a liquid crystal material. The 3551 operates in FFS (Fringe Field Switching) mode. It has a liquid crystal element.

[0066] The input / output panel 3551 includes a transistor 3521, a common electrode 3522, and a pixel electrode 35 23, a layer 3524 containing a liquid crystal material, and a color filter 3525 (FIG. 3(A) ) The pixel electrode 3523 includes a pixel electrode 3523A and a pixel electrode 3523B. The pixel electrode 3523B is electrically connected to the pixel electrode 3523A. The layer 3524 is sandwiched between an alignment film 3561 and an alignment film 3562. 23A and pixel electrode 3523B are the source electrode or drain electrode of transistor 3521. It is electrically connected to one of the electrodes.

[0067] The pixel electrode 3523A and the pixel electrode 3523B are part of the pixel electrode. The liquid crystal display panel 3523A and the pixel electrode 3523B are provided on the common electrode 3522 via an insulating layer. The liquid crystal element has a pair of electrodes. The pixel electrode 3523A and the pixel electrode 3523B are a pair of electrodes. The common electrode 3522 is the other of the pair of electrodes. By applying a voltage between the electrodes, the liquid crystal material contained in the layer 3524 containing the liquid crystal material is aligned. The direction can be controlled.

[0068] The gate wiring 3517 is made of the same material as the gate electrode 3516 of the transistor 3521. This allows the gate wiring 3517 and the gate electrode 3516 to be formed in the same process. In addition, the gate wiring 3517 and the gate electrode 3516 can be electrically connected to each other. In addition, the gate wiring 3517 can be connected to the sensor in the contact region 3518. It can be electrically connected to the electrode 3529.

[0069] The sensor electrode 3527 contains the same material as the common electrode 3522. The capacitor electrode 3527 and the common electrode 3522 can be formed in the same process.

[0070] The input / output panel 3551 shown in FIG. 3A includes a sensor electrode 3529 and a sensor electrode 352 The electric field formed between the sensor electrode 3529 and the sensor electrode 3527 is indicated by a dashed line. 3563. For example, when a conductive object 3564 crosses this electric field, The sensor electrodes 3529 and 3527 are the same as those shown in FIG. This corresponds to the capacitance type sensor unit 3515 of the input / output panel, which will be explained using the circuit diagram.

[0071] A layer 3524 containing a liquid crystal material is sandwiched between a substrate 3543 and a substrate 3541 .

[0072] FIG. 3(B) is a plan view showing the structure of wiring and the like of the input / output panel 3551 shown in FIG. 3(A). FIG.

[0073] In addition, the distance between Am and An and between Bm and Bn shown in each cross-sectional view in this specification is determined by the plane. It corresponds to the relationship between Am and An, and between Bm and Bn shown in the figure. However, m and n are both It is a natural number.

[0074] The transistor 3521 is arranged so as to overlap with the common electrode 3522 and the pixel electrode 3523. The gate electrode 3516 of the transistor 3521 is connected to the gate wiring 351 7. The source electrode and drain electrode of the transistor 3521 are electrically connected to The electrode contains the same material as the source wiring 3519. The drain electrode and the source wiring 3519 can be formed in the same process. The source electrode or the drain electrode can be electrically connected to the source wiring 3519. In other plan views, the transistors are arranged overlapping the common electrode or the pixel electrode. It is possible.

[0075] As described in Embodiment 7, the transistor 3521 may be a bottom-gate transistor or a top-gate transistor. The gate electrode may be of a single gate type or of a type having two gate electrodes.

[0076] A part of the electric field formed between the sensor electrode 3529 and the sensor electrode 3527 is indicated by the dashed line 35 63 (see FIG. 3B). In the touch sensor of one embodiment of the present invention, The sensor electrode 3529 and the sensor electrode 3564 can be detected. Reference numeral 527 corresponds to a pair of electrodes of the capacitance type sensor unit 3515 (see FIG. 1(A)).

[0077] Configuration example 2 The input / output panel described using the circuit diagram shown in FIG. 1B has a common electrode 3522 and a sensor As an example, the structure of a part of the pixel of the input / output panel 3552 is shown in the figure. The explanation will be given using a schematic cross-sectional view (see FIG. 4(A)). The input / output panel 3552 has a layer 3524 containing a liquid crystal material. It has a crystal element.

[0078] The input / output panel 3552 shown in FIG. 4(A) is different from the input / output panel 3552 shown in FIG. 3( This is different from the input / output panel 3551 shown in A).

[0079] The input / output panel 3552 shown in FIG. 4A includes a sensor electrode 3529 and a common electrode 3522. The electric field formed between the sensor electrode 3529 and the common electrode 3522 is indicated by the dashed line 35 63. For example, the state in which a conductive object 3564 crosses this electric field is shown. The other parts are the same as those of the input / output panel 3551 shown in FIG. The sensor electrode 3529 and the common electrode 3522 are the same as those shown in FIG. The circuit diagram is explained below. Equivalent.

[0080] FIG. 4(B) is a plan view showing the structure of wiring and the like of the input / output panel 3552 shown in FIG. 4(A). FIG.

[0081] A part of the electric field formed between the sensor electrode 3529 and the common electrode 3522 is indicated by a dashed line 356 3 (see FIG. 4B). The touch sensor of one embodiment of the present invention detects the electric field passing through the test object. The sensor electrode 3529 and the common electrode 352 2 corresponds to a pair of electrodes of the capacitance type sensor unit 3515 (see FIG. 1(B)).

[0082] [Example of sensor detection method] Figure 5 (A) and (B) show a schematic diagram of the mutual capacitance type touch sensor and the input / output waveforms. The touch sensor has a pair of electrodes, and a capacitance is formed between the electrodes. An input voltage is applied to one of the pair of electrodes. A current flows through the other electrode. It is equipped with a current detection circuit that detects the potential of the other electrode.

[0083] For example, as shown in Figure 5(A), when a square wave is used as the input voltage waveform, the output current wave Waveforms that have sharp peaks in shape are detected.

[0084] Also, as shown in Figure 5(B), when a conductive object to be detected is close to or in contact with the capacitance, , the capacitance between the electrodes decreases, and the output current value decreases accordingly.

[0085] In this way, the touch sensor according to one embodiment of the present invention can output a current (or potential) relative to an input voltage. ) to detect the change in capacitance, thereby detecting the proximity or contact of the object to be detected. You can find out.

[0086] [Touch sensor configuration example] FIG. 5C shows an example of the configuration of a touch sensor having a plurality of capacitors arranged in a matrix. vinegar.

[0087] The touch sensor includes a plurality of wirings 3510 extending in the X direction (horizontal direction on the paper surface) and a plurality of wirings 3510. The wiring has a plurality of wirings 3511 that intersect with the wiring and extend in the Y direction (the vertical direction on the paper). A capacitance 3503 is formed between the two wirings. For example, in the input / output panel 3551 (FIG. 3( In (A) and (B), the wiring 3510 is connected to the gate wiring 3517 and the sensor electrode 352. 9 and the wiring 3511 corresponds to the sensor electrode 3527.

[0088] Furthermore, the wiring 3510 extending in the X direction is connected to an input voltage or a common potential (ground potential, reference potential This potential is inputted by a phase shifter, for example, a square wave. The pulse voltage can be supplied from the pulse voltage output circuit 3501. Also, the wiring 35 extending in the Y direction 11, a current detection circuit 3502 (for example, a source meter, a sense amplifier, etc.) electrically and the current (or potential) flowing through the wiring can be detected.

[0089] The touch sensor receives an input voltage in sequence through a plurality of wirings 3510 extending in the X direction. The scanning is performed so as to detect a change in the current (or potential) flowing through the wiring 3511 extending in the Y direction. By doing so, it becomes possible to detect (sensing) two-dimensional objects.

[0090] (Embodiment 2) In this embodiment, an embodiment that can be applied to an input / output panel of one embodiment of the present invention will be described. A configuration example different from that of 1 will be described. The input / output panel shown in this embodiment mode has an FFS mode LCD panel having a layer containing a liquid crystal material. It has a liquid crystal element that operates at

[0091] Configuration example 3 The input / output panel described using the circuit diagram shown in FIG. 1B has a common electrode 3522 and a sensor As an example, the structure of a part of the pixel of the input / output panel 3553 is shown in the figure. The explanation will be given using a schematic cross-sectional view (see FIG. 6(A)).

[0092] The input / output panel 3553 includes a transistor 3521, a common electrode, a pixel electrode 3523, (See FIG. 6A.) The common electrodes are a common electrode 3522A and a common electrode 3522B. B. The common electrode 3522B is electrically connected to the common electrode 3522A. The electrode 3523 contains the same material as the sensor electrode 3529. The pole 3523 and the sensor electrode 3529 can be formed in the same process.

[0093] FIG. 6(B) is a plan view showing the structure of wiring and the like of the input / output panel 3553 shown in FIG. 6(A). FIG.

[0094] A part of the electric field formed between the sensor electrode 3529 and the common electrode 3522A is indicated by the dashed line 35 63 (see FIG. 6B). The touch sensor of one embodiment of the present invention is The common electrode 3522B can detect the detection object 3564. This allows the electric field that the object to be detected can easily cross to be generated between the sensor electrode 3529 and the common electrode. The sensor electrode 3529 and the common electrode 3522A can be formed between the sensor electrode 3529 and the common electrode 3522A. 522A corresponds to a pair of electrodes of the capacitance type sensor unit 3515 (see FIG. 1(B)). .

[0095] For other configurations of the input / output panel 3553, refer to the configuration of the input / output panel 3552. can.

[0096] Configuration Example 4 The input / output panel described using the circuit diagram shown in FIG. 1B has a common electrode 3522 and a sensor As an example, the structure of a part of the pixel of the input / output panel 3554 is shown in the figure. The explanation will be given using a schematic cross-sectional view (see FIG. 7(A)).

[0097] The input / output panel 3554 includes a transistor 3521, a common electrode, a pixel electrode 3523, (See FIG. 7A.) ​​The common electrodes are a common electrode 3522A and a common electrode 3522B. B. The common electrode 3522B is electrically connected to the common electrode 3522A. The electrode 3523 contains the same material as the sensor electrode 3529. The pole 3523 and the sensor electrode 3529 can be formed in the same process.

[0098] FIG. 7(B) is a plan view showing the structure of wiring and the like of the input / output panel 3554 shown in FIG. 7(A). FIG.

[0099] A part of the electric field formed between the sensor electrode 3529 and the common electrode 3522A is indicated by the dashed line 35 63 (see FIG. 7B). The touch sensor of one embodiment of the present invention is The common electrode 3522B has an opening, and the sensor 3522B can detect the detection object 3564. The common electrode 3522A and the common electrode 3522B have an area that overlaps with the opening. The sensor electrodes 3529 correspond to a pair of electrodes of the capacitance type sensor unit 3515 (FIG. 1( See B).

[0100] For other configurations of the input / output panel 3554, refer to the configuration of the input / output panel 3552. can.

[0101] Configuration Example 5 The input / output panel described using the circuit diagram shown in FIG. 1(A) includes a sensor electrode 3527 and a sensor As an example, the structure of a part of the pixel of the input / output panel 3555 is as follows: This will be explained using a schematic cross-sectional view (see FIG. 8(A)).

[0102] The input / output panel 3555 includes a transistor 3521, a common electrode, a sensor electrode 3527, and , and a pixel electrode 3523 (see FIG. 8(A)). and a common electrode 3522B. The common electrode 3522B is electrically connected to the common electrode 3522A. The common electrode comprises the same material as the sensor electrode 3527. This allows the common electrode and the sensor electrode 3527 to be formed in the same process.

[0103] FIG. 8(B) is a plan view showing the structure of wiring and the like of the input / output panel 3555 shown in FIG. 8(A). FIG.

[0104] A part of the electric field formed between the sensor electrode 3529 and the sensor electrode 3527 is indicated by the dashed line 35 63 (see FIG. 8B). The touch sensor of one embodiment of the present invention is The common electrode 3522B can detect the detection object 3564. This allows the sensor electrode 3529 and the sensor to generate an electric field that the object to be detected can easily cross. The sensor electrode 3529 and the sensor electrode 3527 can be formed between the sensor electrode 3529 and the sensor electrode 3527. 3527 corresponds to a pair of electrodes of the capacitance type sensor unit 3515 (see FIG. 1(A)). .

[0105] For other configurations of the input / output panel 3555, refer to the configuration of the input / output panel 3551. can.

[0106] (Embodiment 3) An example of a method for driving a touch panel according to one embodiment of the present invention will be described below.

[0107] FIG. 9A is a block diagram showing the configuration of a mutual capacitance type touch sensor. In the touch sensor, a pulse voltage output circuit 3501 and a current detection circuit 3502 are included. In addition, the wiring 3510 to which the pulse voltage is applied is designated as X1-Xn, and n wirings are used for each of them. The wiring 3511 for detecting a change in current is designated as Y1-Ym, and each of the wirings has m wirings. 9A shows a plurality of wirings 3510 and a plurality of wirings 351 1 are overlapped to form a plurality of capacitors 3503. The functions of the wiring 3511 and the wiring 3512 may be interchangeable.

[0108] The pulse voltage output circuit 3501 is a circuit for applying a pulse voltage to the wirings X1-Xn in order. When a pulse voltage is applied to the wiring of X1-Xn, a capacitance 3503 is formed. An electric field is generated between the wiring 3510 and the wiring 3511. The electric field generated between these wirings may cause shielding or the like. This generates a change in the mutual capacitance of the capacitor 3503, and the proximity of the object to be detected or can detect contact.

[0109] The current detection circuit 3502 detects the change in mutual capacitance at the capacitor 3503, and detects the change in the wiring between Y1 and Ym. The Y1-Ym wiring detects the proximity of the object to be detected, or the change in the current. The detected current value does not change if there is no contact or proximity of the object to be detected. When the mutual capacitance decreases due to contact, a decrease in the current value is detected. This can be done using an integrating circuit or the like.

[0110] Next, FIG. 9B shows input and output waves in the mutual capacitance type touch sensor shown in FIG. In FIG. 9(B), the detected object in each row and column is detected in one frame period. In addition, in FIG. 9(B), when the object to be detected is not detected (non-touched), The period 3601 when the object is detected (touch) and the period 3602 when the object is detected (touch) are shown. For the wiring Y1-Ym, the voltage value corresponding to the detected current value is The waveform shown is:

[0111] A pulse voltage is applied to the wires X1-Xn in order, and the wires Y1-Y When there is no proximity or contact of the object to be sensed, the waveform of X1-Xn changes. The waveforms of Y1-Ym change uniformly according to the change in the voltage of the wiring. At the point where the current decreases, the waveform of the voltage also changes. .

[0112] The wiring 3510 from X1 to Xn in the block diagram shown in FIG. 9(A) is the same as that shown in the other embodiments. This corresponds to the gate wiring 3517 of the input / output panel. This corresponds to the gate wiring 3517 of one of the input / output panels 3555. To explain the coordinates of the capacitor 3503 shown in 9(A) and the layout of each wiring, X1-Xn The wiring 3510 is arranged in the X1-Xn rows, and the wiring 3511 is arranged in the Y1-Ym rows. The sensors are arranged in rows Y1 to Ym.

[0113] The timing chart shown in FIG. 10 shows the voltages applied to the wirings 3510 in the X1 to Xn rows. The signal 3611 is a signal for driving the display element. The signal 3612 is a signal for driving the touch sensor. In the input / output panel, the gate wiring 3517 can transmit both signals, so for example, The signals 3611 and 3612 in the same row are connected to the same gate wiring 35 formed in the row. 17. That is, the signal 3611 and the signal 3612 are shown in FIG. 1(A) or FIG. 1(B). ) can also be considered as a selection signal input to the gate wiring 3517.

[0114] The timing chart shown in FIG. 10 is a timing chart showing when the common electrode 3522 is separated from the sensor electrode 3527. A method for driving a separate input / output panel, for example, an example of a method for driving the input / output panel 3551 The vertical axis represents the change in voltage of the gate wiring. The wiring of X1-Xn is corresponds to the common electrode 3522, and corresponds to the sensor electrode 3527 in the touch sensor. In this structure, the touch sensor detects an object to be detected and writes information to the display element. In other words, while the selection signal is input to the gate wiring, the video signal is The signal is input to the source wiring, and an object to be detected that is close to the gate wiring is detected.

[0115] In this case, for a display element at a certain coordinate, the period during which a video signal is written to the display element The period between the period 3621 and the next period 3621 is a display period 3622. The period 3623 during which the object to be detected is detected coincides with the period 3621 as described above. The cycle in which 3621 repeats is one frame period 3624.

[0116] The timing chart shown in FIG. 11 is a timing chart showing the timing when the common electrode 3522 is connected to one of the liquid crystal elements 3513. A driving method for an input / output panel that also serves as an electrode and a sensor electrode, for example, an input / output panel 3552 An example of the driving method is shown below. The wiring of X1-Xn is common to the display element and the touch sensor. This corresponds to the electrode 3522. In this structure, the touch sensor detects the object to be detected and the surface The writing to the display element is performed with a time lag.

[0117] In this case, crosstalk between the display element and the touch sensor at a certain coordinate is avoided. In order to achieve this, after the period 3621 in which the video signal is written to the display element has elapsed for all rows, In other words, a period 3621 and a period 3622 are provided for writing a black signal. The period between 3625 and 3626 is the display period 3622. After the period 3625 has elapsed for all rows, the touch sensor A period 3623 for detecting the object to be detected is provided for all rows. During the period 3623 when the object to be detected is detected by the touch sensor, the gate voltage rises. The difference in waveform is evaluated, but this waveform changes depending on the potential of the pixel electrode 3523. To reduce the influence on the detection, the source line 3519 is connected to a black signal line during the period 3623. In this way, one frame period 3624 is completed. After that, writing of the video signal to the display element starts again.

[0118] By writing the black signal before sensing, the wiring 35 shown in FIG. The potential between the pixel electrode 3523 and the wiring 3511 is more uniformly affected by the potential of the pixel electrode 3523. Instead of the black signal, a signal of a predetermined chromaticity can be used. Alternatively, a predetermined voltage may be applied to the pixel electrode 3523 to write a black signal. is also good.

[0119] If one frame period 3624 is fixed and the display period 3622 is to be extended, the period 362 This is possible by shortening 3, i.e., by using high-speed sensing.

[0120] The timing chart shown in FIG. 12 indicates that the common electrode 3522 drives the liquid crystal element 3513. Another method of driving a structure that is one of the electrodes and has a function as a sensor electrode Here is an example.

[0121] In this case, the period 3623 during which the touch sensor detects the object is set to a group of adjacent rows. The signals for a group of adjacent rows are sent to the wiring 3511 that detects the change in current. However, the total sensing period 362 6 is shorter, enabling high-speed sensing.

[0122] As an example of a group of adjacent rows, in the structure shown in the block diagram of FIG. 9(A), Xr The rows can be consecutive rows from X to Xs, where r is an integer greater than or equal to 1 and less than or equal to s, and s is an integer greater than or equal to r and less than or equal to n-1. In this case, s is preferably greater than or equal to r+1. Xr When the processing of consecutive rows from X to Xs is completed, the processing of unprocessed rows can be performed next. For example, we can perform the same process on a group of adjacent rows from X(s+1). In this way, the processing from X1 to Xn rows is completed. Alternatively, a certain number of rows may be grouped into a group of adjacent rows. You can use a fixed number of rows, or a group of adjacent rows. For example, the common electrode 3522 (see FIG. 4B) in the input / output panel 3552 is In other words, Xr to Xs You can join consecutive lines up to

[0123] The timing chart shown in FIG. 13 indicates that the common electrode 3522 drives the liquid crystal element 3513. Another method of driving a structure that is one of the electrodes and has a function as a sensor electrode Here is an example.

[0124] In this case, black signals are written sequentially to the display elements of a group of adjacent rows, and then the above A group of adjacent rows is sensed at a time, and then a group of adjacent rows is sensed at a time. These are performed in a period 3627, and similarly, the next group of video signals are written. Adjacent rows are processed. When one frame period is fixed, the timing shown in Figure 13 The driving method shown in the chart makes the display period 3622 longer than that in FIG. can be done.

[0125] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible.

[0126] (Fourth embodiment) Regarding the wiring of the touch panel of one embodiment of the present invention, in this embodiment, the number of wirings 3510 is The number of wirings 3511 is doubled and the number of wirings 3511 is halved. explain.

[0127] In the block diagram shown in FIG. 14, the number of capacitors 3503 is The number of capacities 3503 shown is the same as the number of capacities 3503 shown.

[0128] In FIG. 14, the touch sensor includes a pulse voltage output circuit 3501A and a pulse voltage output circuit 3501B. Also, the wiring 3510 to which the pulse voltage is applied is connected to X1A-XnA. , X1B-XnB are shown as 2n wires each. The wiring 3511 is illustrated as Y1-Ym, each of which has m / 2 wirings.

[0129] For example, a capacitance 3503A connected to the pulse voltage output circuit 3501A and a capacitance 3503B connected to the pulse voltage output The capacitor 3503B connected to the circuit 3501B can be arranged adjacent to each other. can.

[0130] By making such an arrangement selectable, the degree of freedom in pixel layout increases. For example, When the resistance of the wiring 3511 needs to be reduced, the wiring width of the wiring 3511 is increased while C The number of pixels in each direction can be maintained.

[0131] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible.

[0132] (Embodiment 5) In this embodiment, an embodiment that can be applied to an input / output panel of one embodiment of the present invention will be described. A configuration example different from that of Embodiment 1 or 2 will be described. Specifically, The input / output panel has a liquid crystal element or a light emitting element.

[0133] Configuration Example 6 The input / output panel described using the circuit diagram shown in FIG. 1A has a sensor electrode 3527. The sensor electrode 3527 is separated from the common electrode 3522. The structure of a part of the pixel of the panel 3556 will be explained using a cross-sectional view showing the structure (FIG. 15(A)). )reference).

[0134] The input / output panel 3556 shown in FIG. 15(A) is an IPS (In-Plane-Switch It has a liquid crystal element that operates in the ing mode.

[0135] The input / output panel 3556 includes a transistor 3521, a common electrode, a pixel electrode 3523, (See FIGS. 15(A) and 15(B)). The common electrode has a comb-like shape. The common electrodes include a common electrode 3522A and a common electrode 3522B. Electrode 3523, sensor electrode 3527 and sensor electrode 3529 comprise the same material. The common electrode, the pixel electrode 3523, the sensor electrode 3527 and the sensor electrode 3529 are connected to the same It can be formed in one step.

[0136] FIG. 15(B) is a schematic diagram showing the structure of wiring etc. of the input / output panel 3556 shown in FIG. 15(A). FIG.

[0137] A part of the electric field formed between the sensor electrode 3529 and the sensor electrode 3527 is indicated by the dashed line 35 63 (see FIG. 15B). The touch sensor of one embodiment of the present invention has a structure in which the electric field crosses the It is possible to detect the object to be detected 3564. In addition, the sensor electrode 3529 and the sensor electrode 3527 corresponds to a pair of electrodes of the capacitance type sensor unit 3515 (see FIG. 1(A)). .

[0138] For other configurations of the input / output panel 3556, refer to the configuration of the input / output panel 3551. can.

[0139] Configuration Example 7 The input / output panel 3557 shown in FIG. 16(A) is a VA (Vertical Alignment It has a liquid crystal element that operates in nt mode.

[0140] The common electrode 3522 is disposed opposite to the pixel electrode 3523 via a layer 3524 containing a liquid crystal material. In addition, a wiring 3526 is provided so as to overlap the common electrode 3522. The wiring 3526 is, for example, a wiring that electrically connects blocks not shown in FIG. 16(A). In addition, a liquid crystal layer can be provided between the common electrode 3522 and the pixel electrode 3523. The sensor electrode 3529 and the pixel electrode 3523 include a layer 3524 containing a material. This allows the sensor electrode 3529 and the pixel electrode 3523 to be formed in the same process. It can be formed in a process.

[0141] FIG. 16(B) is a schematic diagram showing the structure of wiring etc. of the input / output panel 3557 shown in FIG. 16(A). FIG.

[0142] A part of the electric field formed between the sensor electrode 3529 and the sensor electrode 3527 is indicated by the dashed line 35 63 (see FIG. 16B). The touch sensor of one embodiment of the present invention has a structure in which the electric field crosses the It is possible to detect the object to be detected 3564. In addition, the sensor electrode 3529 and the sensor electrode 3527 corresponds to a pair of electrodes of the capacitance type sensor unit 3515 (see FIG. 1(A)). In addition, a part of the wiring 3526 and a part of the common electrode 3522 overlap with the pixel electrode 3523. To avoid complication of the drawing, the wiring 3526 and the common electrode 3522 are shown in FIG. It has been omitted.

[0143] For other configurations of the input / output panel 3557, refer to the configuration of the input / output panel 3551. can.

[0144] The input / output panel shown in FIG. 16(A) and FIG. 16(B) is used to change the liquid crystal element to TN (T It can be operated in a twisted nematic mode.

[0145] Configuration Example 8 The touch panel which is one embodiment of the present invention may include a light-emitting element.

[0146] FIG. 17(A) is a cross-sectional view showing a schematic structure of a part of a pixel of the input / output panel 3558. The input / output panel 3558 has a light-emitting element. The light-emitting element includes a pixel electrode 3523, an electrode 3572 and a layer 3573 containing a light-emitting material. is provided between the pixel electrode 3523 and the electrode 3572.

[0147] A conductive material that transmits visible light is used for the electrode 3572. This allows light to be taken from the light-emitting element. Or the extracted light can be seen. For example, visible light A conductive material that transmits light can be used for the cathode or anode. A conductive material that transmits visible light is used for the electrode 3572, and the electrode 3572 is used as a cathode (FIG. 17(A) )reference).

[0148] A conductive material that reflects visible light can be used for the pixel electrode 3523. Aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum A single layer of metal such as silver, tantalum, or tungsten, or an alloy containing these as the main component. A structure or a laminated structure can be used for the pixel electrode 3523.

[0149] A conductive material that transmits visible light can be used for the electrode 3572. Specifically, an oxide film Indium, indium tin oxide, indium zinc oxide, zinc oxide, gallium doped A conductive oxide such as zinc oxide can be used for the electrode 3572. The conductive film will be described separately later.

[0150] The pixel electrode 3523 contains the same material as the sensor electrode 3529. The element electrode 3523 and the sensor electrode 3529 can be formed in the same process. The pixel electrode 3523 is not connected to the sensor electrode 3529. , and has an area that does not overlap with the sensor electrode 3529. For example, it is formed using a shadow mask. The opening is formed in the groove.

[0151] The input / output panel 3558 includes an insulating layer 3576 and a resin layer 3577. 6 reduces the diffusion of water from the resin layer 3577 to the layer 3573 containing the luminescent material.

[0152] The input / output panel 3558 includes pixel electrodes 3523. The pixel electrodes 3523 are transistors. The transistor 3530 is electrically connected to either the source electrode or the drain electrode of the transistor 3530. The other of the source electrode or the drain electrode of the transistor 3530 is electrically connected to a power supply line 3531. The transistor 3530 has a function of controlling a light-emitting element. The transistor 3530 is a driving transistor. The gate electrode is the source electrode or the drain electrode of the switching transistor 3521. The gate electrode of the switching transistor 3521 is electrically connected to the gate The pixel electrode 3523 and the sensor electrode 3529 are electrically connected to the output wiring 3517. The electrode is used to detect changes in capacitance, allowing for capacitance detection.

[0153] In addition, in order to paint the layer 3573 containing the light-emitting material between the pixels, the pixel electrode 3523 A partition 3578 is formed between the layer 3573 containing a light-emitting material and the layer 3578 containing a light-emitting material. The insulating film is formed using an inorganic insulating film or an organic insulating film. Silicon nitride film or silicon oxynitride film formed by the SOG method, A silicon film or a silicon nitride oxide film can be used. Acrylic resin film or the like can be used.

[0154] Here, when forming the partition wall 3578, a taper can be easily formed by using a wet etching method. If the side wall of the partition wall 3578 is not smooth enough, it may cause a step. Care must be taken as the resulting deterioration of the EL layer can become a significant problem.

[0155] A partition wall 3578 is also formed in the contact region 3518. The unevenness of the pixel electrode due to the unevenness of 3518 is filled with the partition wall 3578, This prevents deterioration of the EL layer caused by

[0156] A part of the electric field formed between the sensor electrode 3529 and the sensor electrode 3527 is indicated by the dashed line 35 63 (see FIG. 17A). The touch sensor of one embodiment of the present invention has a structure in which the electric field crosses the It is possible to detect the object to be detected 3564. In addition, the sensor electrode 3529 and the sensor electrode 3527 corresponds to a pair of electrodes of the capacitance type sensor unit 3515 (see FIG. 1(A)). The driving methods shown in Figures 11, 12 and 13 can be used for input / output panels.

[0157] The sensor electrode 3527 contains the same material as the electrode 3572. The electrode 3527 and the electrode 3572 can be formed in the same process. The electrode 3527 can be formed separately from the electrode 3572. 527 is a common electrode, the sensor electrode 3527 and the sensor electrode 3529 are connected to a capacitance part. The electrode may be a pair of electrodes.

[0158] Configuration Example 9 The input / output panel 3559 shown in FIG. 18(A) is the same as the input / output panel 3551 shown in FIG. 3(A). The sensor electrode 3527 is formed on a substrate 3543. At this time, the substrate 3543 is , sandwiched between the sensor electrode 3527 and a layer 3524 containing liquid crystal material.

[0159] By arranging the sensor electrode 3527 in this way, the sensor electrode 3529 and the sensor electrode Between 3527, electric lines of force that the object to be detected 3564 can easily cross can be formed. As a result, the sensitivity of the capacitance type sensor can be improved.

[0160] Configuration Example 10 A conductive film that transmits visible light is formed on the common electrode 352 of the input / output panel 3557 shown in FIG. 2 or the electrode 3572 of the input / output panel 3558 shown in FIG. 17(A). For example, the reflectance to light in the wavelength range of 400 nm or more and less than 800 nm is preferably 1% or more. Preferably, the transmittance is 5% or more and less than 100%, and the transmittance is 1% or more, preferably 10% or more. A conductive film having a conductivity of less than 0.00% can be used for the common electrode 3522 or the electrode 3572. do.

[0161] Specifically, a silver (Ag)-containing film having a thickness of 1 nm to 30 nm, preferably 1 nm to 15 nm, is used. A conductive material containing aluminum (Al) or the like is used as the common electrode 3522. Or it can be used for the electrode 3572.

[0162] Or a material containing an element selected from indium, tin, zinc, gallium, or silicon can be used for the common electrode 3522 or the electrode 3572. Specifically, In oxide Zn oxide, In-Sn oxide (also called ITO), In-Sn-Si oxide (IT SO), In-Zn oxide, In-Ga-Zn oxide, etc. or electrode 3572.

[0163] Alternatively, a film containing graphene or graphite may be attached to the common electrode 3522 or the electrode 357. Specifically, a film containing graphene oxide is formed, and the graphene oxide can be used for the following purpose. A graphene-containing film formed by reducing a graphene-containing film can be used. The reduction may be carried out by applying heat or by using a reducing agent.

[0164] In addition, a metal oxide such as In-Ga-Zn oxide is used as the common electrode 3522 or the electrode 3572. In addition, for example, a nitride insulating film such as a silicon nitride film can be used as the A laminated film having a metal oxide upper layer can be used for the common electrode 3522 or the electrode 3572. It is possible to thermally diffuse nitrogen or hydrogen from the nitride insulating film into the metal oxide. This allows the carrier density to be increased. It can be made into an conductor (OC: Oxide Conductor).

[0165] Alternatively, the thickness is 30 nm or more and 500 nm or less, or 100 nm or more and 400 nm or less. An oxide conductor (OC) can be used for the common electrode 3522 or the electrode 3572. .

[0166] In addition, a conductive film that transmits visible light is formed on the pixel electrode 3523, the sensor electrode 3527, and the sensor electrode 3529, electrode 3572, or a plurality of the display elements. The display area is formed so as to overlap with any of the electrodes using a conductive film that transmits visible light. As a result, the display light of the display element is transmitted through the pixel electrode 3523, the sensor electrode 3524, and the 527, sensor electrode 3529, and / or electrode 3572. Alternatively, the user may select the pixel electrode 3523, the sensor electrode 3527, the sensor electrode 3529, and the Indicia may be visible through any one or more of the poles 3572.

[0167] Configuration Example 11 The input / output panel 3560 shown in FIG. 18(B) has a transmissive or semi-transmissive liquid crystal element. The input / output panel 3560 has a backlight BL, which is the same as that of the first embodiment, for example. In this respect, it is different from the input / output panel 3551 described with reference to FIG. The electrode 3522, the pixel electrode 3523A and the pixel electrode 3523B are all transparent to visible light. do.

[0168] The backlight BL emits light L in the direction of the arrow 3581. Light can be applied to the layer 3524 containing the material. For example, a direct light source or a side light source can be used. A light-type light source can be used for the backlight BL.

[0169] The input / output panel 3560 has a functional film 3582. For example, a polarizing plate is attached to the functional film 3582. Although not shown, for example, a liquid crystal material may be placed between the functional film 3582. Another functional film may be used to sandwich the layer containing the compound.

[0170] A transmissive liquid crystal element having a conductive film capable of transmitting visible light is described in this specification. It can be used for input / output panels. By using a backlight that supplies light in sequence, it is possible to eliminate the need to form a colored film on the liquid crystal element. When all colors of light are supplied simultaneously, white can be displayed. become.

[0171] For example, a reflective liquid crystal element and a polarizer can be used in the input / output panel 3560. Specifically, a polarizing plate can be used on the display surface side of a reflective liquid crystal element.

[0172] In addition, the light diffusion plate can be used on the display surface side of either input / output panel. Visibility can be improved.

[0173] The input / output panel described in the first to fourth embodiments or this embodiment You can select and combine two or more of the above configurations as needed. For example, if you are running in FFS mode, The liquid crystal element operates in the VA mode or the liquid crystal element operates in the VA mode. Alternatively, a display element using another display method can be used.

[0174] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. can be done.

[0175] (Embodiment 6) In this embodiment, an example of a method for driving a touch panel according to one embodiment of the present invention will be described with reference to the drawings. and explain.

[0176] [Example of sensor detection method] In Figure 9(A), a passive matrix is ​​used as a touch sensor, with only capacitance at the intersection of the wiring. The structure of the touch sensor is shown, but the active matrix with transistors and capacitors is also shown. An active matrix touch sensor can also be used. 1 shows an example of one sensor circuit included in the sensor.

[0177] The sensor circuit includes a capacitor 1503, a transistor 1511, a transistor 1512, and a transistor The transistor 1513 has a gate to which a signal G2 is applied, and A voltage VRES is applied to one of the source and drain, and the other is applied to one electrode of the capacitor 1503. and the gate of the transistor 1511. The transistor 1511 is electrically connected to the source One of the drains is electrically connected to one of the source and drain of the transistor 1512. The transistor 1512 has a gate to which a signal G1 is applied, and the other to which a voltage VSS is applied. The other of the source and drain is electrically connected to the signal line ML. A voltage VSS is applied to the electrodes.

[0178] Next, the operation of the sensor circuit will be described. First, the signal G2 is output from the transistor 1513. When a potential that turns on the transistor 1511 is applied, the gate of the transistor 1511 is connected. A potential corresponding to the voltage VRES is applied to the node n. Then, a signal G2 is output from the transistor. By applying a potential that turns off the transistor 1513, the potential of the node n is maintained.

[0179] Next, the mutual capacitance of the capacitor 1503 changes when a detection object such as a finger approaches or touches the sensor. As a result, the potential of the node n changes from VRES.

[0180] The read operation applies a potential to the signal G1 to turn on the transistor 1512. The current flowing through the transistor 1511 in response to the potential of the node n, that is, the current flowing through the signal line ML, By detecting this current, the proximity or contact of the object to be detected can be detected. This can be done.

[0181] The transistors 1511, 1512, and 1513 are channel It is preferable to use a transistor in which an oxide semiconductor is used for a semiconductor layer in which a hole is formed. In particular, an oxide semiconductor is used for a semiconductor layer that forms a channel of the transistor 1513. This makes it possible to maintain the potential of node n for a long period of time, and This reduces the frequency of the operation of resupplying ES (refresh operation).

[0182] [Example of display device driving method] FIG. 25(A) is a block diagram showing an example of the configuration of a display device. The gate drive circuit GD, the source drive circuit SD, and the pixel pix are shown in FIG. Then, the gate lines x_1 to x_m (m is a natural number) electrically connected to the gate drive circuit GD are ), source lines y_1 to y_n (n is a natural number) electrically connected to the source driver circuit SD In correspondence with these, the pixels pix are given the codes (1,1) to (n,m), respectively.

[0183] Next, FIG. 25(B) shows the gate lines and source lines in the display device shown in FIG. 25(A). In FIG. 25(B), the data is applied for each frame period. The diagram shows two cases: when the data signal is rewritten and when the data signal is not rewritten. Note that FIG. 25(B) does not take into account periods such as blanking periods.

[0184] When the data signal is rewritten every frame period, the gate lines x_1 to x_m are During the horizontal scanning period 1H, when the scanning signal is at H level, A data signal D is applied to the column source lines y_1 to y_n.

[0185] If the data signal is not rewritten every frame period, the data signal is applied to the gate lines x_1 to x_m. In the horizontal scanning period 1H, the scanning signal to the source lines y_1 to y_n of each column is stopped. Stop giving data signals.

[0186] In particular, a driving method that does not rewrite data signals every frame period is This is effective when an oxide semiconductor is used as a semiconductor layer in which a channel is formed as a starter. Transistors that use oxide semiconductors are transistors that use semiconductors such as silicon. Therefore, it is possible to reduce the off-state current by an extremely small amount per frame period. The data signal written in the previous period can be held without being rewritten. For example, the gradation of the pixel can be maintained for 1 second or more, preferably 5 seconds or more. .

[0187] In addition, polycrystalline silicon is used in a semiconductor layer in which a channel is formed as a transistor included in a pixel. When applying this method, it is necessary to increase the size of the storage capacitance of the pixel in advance. The larger the storage capacitance, the longer the grayscale of the pixel can be maintained. The size of the storage capacitor depends on the leakage current of the transistor and display element electrically connected to the storage capacitor. For example, the storage capacitance per pixel should be set to 5 fF or more and 5 pF or less. Preferably, the capacitance is 10 fF or more and 5 pF or less, and more preferably, 20 fF or more and 1 pF or less. The data signal written in the previous period is not rewritten every frame period. can be held for a period of, for example, several frames or several tens of frames. It is possible to maintain the gradation.

[0188] [Example of display device and touch sensor driving method] 26(A) to 26(D) show an example of the touch sensor described in FIGS. 9(A) and 9(B), When the display devices described in FIGS. 25(A) and 25(B) are driven for 1 second, 26A is a diagram illustrating the operation of the display device during the following frame period. The frame period of the touch sensor is set to 16.7 ms (frame frequency: 60 Hz). The figure shows the case where the frame period is 16.7 ms (frame frequency: 60 Hz).

[0189] In the touch panel of this embodiment, the display device and the touch sensor operate independently of each other. Therefore, the touch detection period can be set in parallel with the display period. As shown in the figure, the frame period of both the display device and the touch sensor is set to 16.7 ms (frame The frame frequency of the touch sensor and the display device can be set to 60Hz. For example, as shown in FIG. 26(B), one frame period of the display device is 8.3ms (frame frequency: 120Hz), and one frame period of the touch sensor It can also be set to 16.7 ms (frame frequency: 60 Hz). One frame period of the display device may be set to 33.3 ms (frame frequency: 30 Hz).

[0190] The display device is also configured to be switchable in frame frequency, so that when displaying moving images, the frame Increase the frame rate (for example, 60Hz or higher or 120Hz or higher) to reduce the image quality when displaying still images. To do this, reduce the frame frequency (for example, 60Hz or less, 30Hz or less, or 1Hz or less). By doing so, the power consumption of the display device can be reduced. The frame frequency can be switched between standby and when a touch is detected. It is okay to let it happen.

[0191] The touch panel of the present embodiment rewrites data signals in the display device. By holding the data signal rewritten in the previous period without changing the display device, Therefore, as shown in Figure 26(C), Then, set the frame period of the display device to 1 sec. (frame frequency: 1 Hz) and touch The frame period of the sensor can be set to 16.7 ms (frame frequency: 60 Hz). Cut.

[0192] Furthermore, when the touch panel of this embodiment is driven as shown in FIG. 26(C), Therefore, as shown in FIG. 26(D), When the sensor detects the proximity or contact of the object to be detected, the data on the display device is You can also rewrite the signal.

[0193] Here, if a data signal rewrite operation is performed on the display device during the sensing period of the touch sensor, When the display device is driven, noise is transmitted to the touch sensor, which reduces the sensitivity of the touch sensor. Therefore, it is necessary to rewrite the data signal of the display device. It is preferable to drive the touch sensor so that the period between the touch sensor and the sensing period is shifted.

[0194] In FIG. 27(A), the rewriting of the data signal of the display device and the sensing of the touch sensor are performed. 27B shows an example in which the data signals of the display device are rewritten alternately. This example shows that the touch sensor performs sensing once for every two operations. Not limited to this, the touch sensor is sensed once every three or more rewrite operations. This may also be configured as follows.

[0195] In addition, a transistor used in a pixel of a display device may have an oxide layer in a semiconductor layer where a channel is formed. When a nitride semiconductor is used, the off-state current can be reduced significantly, making it possible to write data signals. Specifically, the frequency of data signal rewriting can be reduced. After the data signal is written, a sufficiently long pause can be provided before the next data signal is rewritten. The pause period can be, for example, 0.5 seconds or more, 1 second or more, or 5 seconds or more. The upper limit of the pause period depends on the capacitance connected to the transistor and the leakage current of the display element, etc. For example, it may be limited to 1 minute or less, 10 minutes or less, 1 hour or less, or 1 day or less. It is possible.

[0196] FIG. 27(C) shows an example in which the data signal of the display device is rewritten once every five seconds. In FIG. 27(C), the display device rewrites the data signal and then writes the next data signal. Before the rewrite operation, there is a pause period during which the operation is stopped. The touch sensor operates at a frame frequency of iHz (i is the frame frequency of the display device or higher, in this case 0. As shown in Figure 27(C), the touch sensor can be driven at a frequency of 2 Hz or more. Sensing should be performed during the rest period, not during the rewriting period of the data signal of the display device. This is preferable because it is possible to improve the sensitivity of the touch sensor. As shown in the figure, when the data signal of the display device is rewritten and the touch sensor is sensed at the same time, , the driving signal can be simplified.

[0197] In addition, during a pause period when the data signal of the display device is not rewritten, the signal to the drive circuit is It is possible to stop the supply of only the power supply voltage, or in addition, to stop the supply of the power supply voltage. Power consumption can be reduced.

[0198] The touch panel of one embodiment of the present invention includes a display device and a touch sensor mounted on two flexible substrates. is sandwiched between the display device and the touch sensor, and the distance between the display device and the touch sensor can be made extremely short. At this time, noise generated when the display device is driven is easily transmitted to the touch sensor, causing the touch sensor to malfunction. However, by applying the driving method exemplified in this embodiment, This makes it possible to create a touch panel that is both thin and has high detection sensitivity.

[0199] (Embodiment 7) In this embodiment, the transistor 3521 included in the input / output panel of one embodiment of the present invention is used as an example. One configuration of a transistor having this structure will be described.

[0200] The transistor 3521 has two gate electrodes, whether it is a bottom gate type or a top gate type. It may also be a type having such a function.

[0201] FIG. 21A illustrates a bottom-gate transistor 151. The transistor 151 has the following characteristics: A conductive film 106 on a substrate 102, an insulating film 104 on the conductive film 106, and a gold film on the insulating film 104. metal oxide film 108, conductive films 120a and 120b on the metal oxide film 108, and metal oxide The insulating film 118 on the film 108, the conductive films 120a and 120b, and the insulating film 12 on the insulating film 118 2, and

[0202] In the transistor 151, the conductive film 106 functions as a gate electrode. The conductive film 120a functions as a source electrode, and the conductive film 120b functions as a drain electrode. It has a function.

[0203] The conductive film 114 is formed over the insulating film 122 and serves as the gate electrode of the transistor 151. When electrically connecting with the conductive film 106, as shown in FIG. 21(B), An opening can be provided in 118 and the insulating film 122 to allow connection.

[0204] FIG. 21C illustrates a top-gate transistor 152. The transistor 152 has the following characteristics: An insulating film 104 on a substrate 102, a metal oxide film 108 on the insulating film 104, and a metal oxide film The insulating film 110 on the insulating film 110, the conductive film 112 on the insulating film 110, the insulating film 104, the metal oxide The insulating film 116 is formed on the conductive film 112. It has a velum 118.

[0205] The metal oxide film 108 is formed in a region where the conductive film 112 does not overlap and where the insulating film 116 is in contact with the metal oxide film 108. The region 108n is formed by the metal oxide film 108 described above. The region 108n is in contact with the insulating film 116, which is made of a nitride. Therefore, the nitrogen or hydrogen in the insulating film 116 is added to the region 108n. When this is added, the carrier density increases and the material becomes n-type.

[0206] The transistor 152 is formed by insulating film 118 on the insulating film 116 and insulating films 116 and 118. a conductive film 120a electrically connected to the region 108n through the opening 141a; The insulating films 116 and 118 are electrically connected to the region 108n through the opening 141b. and a conductive film 120b connected to the conductive film 120.

[0207] In the transistor 152, the conductive film 112 functions as a gate electrode. The conductive film 120a functions as a source electrode, and the conductive film 120b functions as a drain electrode. It has a function.

[0208] The conductive film 114 is formed over the insulating film 122 and serves as the gate electrode of the transistor 152. When electrically connecting with the conductive film 112, as shown in FIG. 21(D), An opening can be provided in 118 and the insulating film 122 to allow connection.

[0209] In the transistor 3521 shown in FIGS. 1A and 1B, the gate electrode 351 6 is a conductive film 106 in the transistor 151, and a conductive film 106 in the transistor 152. A membrane 112 may be used.

[0210] The above describes a transistor having one gate electrode. The following describes two transistors 150. The configuration of the transistor 151 and the transistor 152 is combined.

[0211] 22(A) is a top view of the transistor 150, and FIG. 22(B) is a top view of FIG. 22(A). 22(C) is a cross-sectional view taken along the dashed line Y1-Y2 in FIG. 22(A). FIG.

[0212] The transistor 150 shown in FIGS. 22A, 22B, and 22C includes a conductive film 106 on a substrate 102 and a , an insulating film 104 on the conductive film 106, a metal oxide film 108 on the insulating film 104, and a metal oxide An insulating film 110 on the metal film 108, a conductive film 112 on the insulating film 110, an insulating film 104, a metal The insulating film 116 is formed over the oxide film 108 and the conductive film 112 .

[0213] The metal oxide film 108 has the same structure as that shown in other embodiments. The transistor 150 shown in A, B, and C includes a conductive film 106 and an opening 143. Has.

[0214] The opening 143 is provided in the insulating films 104 and 110. The conductive film 106 has the opening 143. 43, the conductive film 106 is electrically connected to the conductive film 112. The same potential is applied to the conductive film 106 and the conductive film 12. Alternatively, the opening 143 may not be provided and the conductive film 112 may be provided with a different potential. For example, the conductive film 106 may be formed of a light-shielding material. This can suppress light from below from being irradiated onto the metal oxide film 108.

[0215] In addition, in the case of the transistor 150, the conductive film 106 is a first gate electrode (bottom The conductive film 112 functions as a second gate electrode (also referred to as a top gate electrode). The insulating film 104 functions as a first gate insulating film. The insulating film 110 functions as a second gate insulating film.

[0216] The conductive film 106 is made of the same material as the conductive films 112, 120a, and 120b described above. In particular, the conductive film 106 can be formed of a material containing copper, thereby reducing the resistance. For example, the conductive film 106 may be a titanium nitride film or a titanium nitride film. A copper film is provided on a tungsten film or a copper film. b is a laminated structure in which a copper film is provided on a titanium nitride film, a tantalum nitride film, or a tungsten film; In this case, the transistor 150 is preferably used as a pixel transistor and a driver transistor of the display device. By using the conductive film 106 and the conductive film 120 in either one or both of the drive transistors, a, and the parasitic capacitance occurring between the conductive film 106 and the conductive film 120b Therefore, the conductive film 106, the conductive film 120a, and the conductive film 12 0b as the first gate electrode, source electrode, and drain electrode of transistor 150; In addition to being used as a power supply wiring for a display device, a signal supply wiring, or a connection wiring, It can also be used for lines, etc.

[0217] In this way, the transistor 150 shown in FIGS. 22(A), 22(B), and 22(C) has a metal oxide film 10 The transistor 150 has a structure in which conductive films functioning as gate electrodes are provided above and below the transistor 8. As shown, a semiconductor device according to one embodiment of the present invention may be provided with a plurality of gate electrodes.

[0218] The conductive film 114 is formed on the insulating film 122 and serves as the gate electrode of the transistor 150. When electrically connecting to the conductive film 112 or the conductive film 106, As shown in 21(D), openings can be provided in each insulating film to allow connection.

[0219] As shown in FIGS. 22(B) and 22(C), the metal oxide film 108 is used as a first gate electrode. and a conductive film 112 that functions as a second gate electrode. They are positioned opposite each other and are sandwiched between two conductive films that function as gate electrodes.

[0220] The length of the conductive film 112 in the channel width direction is 1 / 2 times the length of the metal oxide film 108 in the channel width direction. The metal oxide film 108 has a length longer than the insulating film 110, and the entire width of the metal oxide film 108 in the channel width direction is The conductive film 112 and the conductive film 106 are covered with the insulating film 104. and the insulating film 110 is connected through the opening 143. One of the side surfaces of the gate electrode 08 in the channel width direction faces the conductive film 112 with the insulating film 110 sandwiched therebetween. are.

[0221] In other words, the conductive films 106 and 112 are formed in the openings provided in the insulating films 104 and 110. a region connected at the portion 143 and positioned outside the side edge of the metal oxide film 108 It has.

[0222] With this structure, the metal oxide film 108 included in the transistor 150 can be A conductive film 106 functioning as a first gate electrode and a conductive film 108 functioning as a second gate electrode are provided. It can be electrically surrounded by the electric field of the film 112. Like the transistor 150, A metal in which a channel region is formed by the electric field of the first gate electrode and the second gate electrode. The device structure of the transistor that electrically surrounds the oxide film 108 is called Surrounded This can be called a channel (S-channel) structure.

[0223] Since the transistor 150 has an S-channel structure, the conductive film 106 or the conductive Applying an electric field to the metal oxide film 108 effectively induces a channel through the film 112 Therefore, the current driving capability of the transistor 150 is improved, and high on-current characteristics are obtained. In addition, since the on-current can be increased, The transistor 150 can be miniaturized. Since the conductive film 108 is surrounded by the conductive film 106 and the conductive film 112, This can increase the mechanical strength of the transistor 150.

[0224] In the channel width direction of the transistor 150, the opening 14 of the metal oxide film 108 An opening different from opening 143 may be formed on the side where no opening 3 is formed.

[0225] As shown in the transistor 150, a transistor is provided with a semiconductor film sandwiched therebetween. When a pair of gate electrodes are connected, one gate electrode is connected to a signal A and the other gate electrode is connected to a signal B. A fixed potential Vb may be applied to the electrodes. A signal A may be applied to one gate electrode and a signal B may be applied to the other gate electrode. A signal B may be applied to the gate electrode. A fixed potential Va is applied to one of the gate electrodes. The other gate electrode may be given a fixed potential Vb.

[0226] The signal A is, for example, a signal for controlling the conductive state or the non-conductive state. It is a digital signal that takes on two types of potential: potential V1 or potential V2 (V1>V2). For example, the potential V1 may be set to a high power supply potential, and the potential V2 may be set to a low power supply potential. Signal A may be an analog signal.

[0227] The fixed potential Vb is, for example, a potential for controlling the threshold voltage VthA of a transistor. The fixed potential Vb may be the potential V1 or the potential V2. This is preferable because it is not necessary to provide a separate potential generating circuit for generating Vb. The fixed potential Vb may be a potential different from the potential V1 or the potential V2. As a result, the gate-source voltage V The drain current when gs is 0V is reduced, and the leakage current of the circuit having the transistor is reduced. For example, the fixed potential Vb may be set lower than the low power supply potential. In some cases, the threshold voltage VthA can be lowered by increasing the fixed potential Vb. As a result, the drain current is improved when the gate-source voltage Vgs is at a high power supply potential, For example, the fixed potential Vb can be set to a low voltage. It may be higher than the source potential.

[0228] The signal B is, for example, a signal for controlling the conductive state or the non-conductive state. It is a digital signal that takes on two types of potential: potential V3 or potential V4 (V3>V4). For example, the potential V3 may be set to a high power supply potential, and the potential V4 may be set to a low power supply potential. Signal B may be an analog signal.

[0229] If signal A and signal B are both digital signals, signal B has the same digital value as signal A. In this case, the on-state current of the transistor is improved, and the transistor is effectively In this case, the potential V1 and the potential V2 of the signal A can be increased. The potential V2 may be different from the potentials V3 and V4 in the signal B. For example, The gate insulating film corresponding to the gate to which signal B is input corresponds to the gate to which signal A is input. If the gate insulating film is thicker than the gate insulating film, the potential amplitude of signal B (V3-V4) is V1-V2) to prevent the transistor from turning on or off. The influence of signal A on the conduction state must be equal to the influence of signal B on the conduction state. It may be possible.

[0230] If signal A and signal B are both digital signals, signal B will have a different digital value than signal A. In this case, the transistors can be controlled by signals A and B separately. For example, when a transistor is an n-channel transistor, If the signal is a channel type, then only if signal A is at potential V1 and signal B is at potential V3 When the signal A is at potential V2 and the signal B is at potential V4, When only one transistor is in a non-conducting state, the functions of a NAND circuit, NOR circuit, etc. can be achieved with one transistor. In addition, the signal B is a signal for controlling the threshold voltage VthA. For example, the signal B may be a period during which the circuit having the transistor is operating and a period during which the signal B is The signal B may be a signal whose potential is different from that during the period when the circuit is not operating. In this case, signal B may be a signal with a different potential according to the operation mode. In some cases, the potential may not be switched very frequently.

[0231] If both signal A and signal B are analog signals, signal B is an analog signal with the same potential as signal A. signal, an analog signal obtained by multiplying the potential of signal A by a constant, or by adding a constant to the potential of signal A. In this case, the on-current of the transistor increases. This may improve the operating speed of a circuit that includes a transistor. In this case, the transistors are controlled by signals A and B. This can be done separately, and higher functionality may be achieved.

[0232] Signal A may be a digital signal and signal B may be an analog signal. Signal A may be an analog signal and signal B a digital signal.

[0233] When a fixed potential is applied to both gate electrodes of a transistor, the transistor is treated as a resistor element. For example, if a transistor is an n-channel In the case of a transistor, the fixed potential Va or the fixed potential Vb can be increased (decreased). In some cases, the effective resistance of the resistor can be lowered (raised). By making Vb high (low), the In some cases, an effective resistance lower (higher) than that expected may be obtained.

[0234] Furthermore, an insulating film may be further formed on the transistor 150. The transistor 150 shown in FIG. 1C has an insulating film on the conductive films 120a and 120b and the insulating film 118. It has a velum 122.

[0235] The insulating film 122 has a function of planarizing unevenness due to transistors and the like. The material 122 may be an insulating material and may be made of an inorganic or organic material. Inorganic materials include silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, and silicon nitride films. Examples of the organic material include silicon film, aluminum oxide film, and aluminum nitride film. Examples of the material include photosensitive resin materials such as acrylic resin and polyimide resin.

[0236] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0237] (Embodiment 8) In this embodiment, the configuration of an information processing device of one embodiment of the present invention will be described with reference to FIGS. 19 and 20. This will be explained with reference to the following.

[0238] 19 and 20 are diagrams illustrating the configuration of an information processing device according to one embodiment of the present invention. 9(A) is a block diagram of an information processing device, and FIG. 19(B) to FIG. 19(E) are diagrams showing the information processing device. 20(A) to 20(E) are perspective views for explaining the configuration of the information processing device. FIG. 2 is a perspective view illustrating the configuration of the device.

[0239] <Information processing device> The information processing device 5200B described in this embodiment includes an arithmetic unit 5210 and an input / output unit 5211. 220 (see FIG. 19(A)).

[0240] The arithmetic unit 5210 has a function of receiving operation information, and generates image information based on the operation information. It has the function of supplying

[0241] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 52 90, has a function to supply operation information and a function to supply image information. The device 5220 has a function of providing detection information, a function of providing communication information, and a function of providing communication information. It has a function to be supplied.

[0242] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 is an information processing The control unit 5200B supplies operation information based on the operation of the user of the control unit 5200B.

[0243] Specifically, keyboards, hardware buttons, pointing devices, and touch sensors , a voice input device, a gaze input device, etc. can be used for the input unit 5240.

[0244] The display unit 5230 has a display panel and a function for displaying image information. The display panel described in the above embodiment can be used as the display portion 5230.

[0245] The detection unit 5250 has a function of supplying detection information. It has the function of detecting the surrounding environment and providing the detected information.

[0246] Specifically, it detects illuminance sensors, imaging devices, posture detection devices, pressure sensors, human presence sensors, etc. It can be used in part 5250.

[0247] The communication unit 5290 has a function of receiving and supplying communication information. It has the function of connecting to other electronic devices or communication networks via wired or wired communication. It has functions such as wireless intranet communication, telephone communication, and short-range wireless communication.

[0248] <Configuration example 1 of information processing device> For example, an outer shape along a cylindrical pillar or the like can be applied to the display unit 5230 (see FIG. 19). (See (B)). It also has a function to change the display method depending on the illuminance of the usage environment. It has a function to detect the presence of people and change the display content. It can be installed on a pillar, or it can display advertisements or information, etc. It can be used for digital signage, etc.

[0249] <Configuration example 2 of information processing device> For example, it has a function to generate image information based on the trajectory of a pointer used by the user ( (See Figure 19(C)). Specifically, the diagonal length is 20 inches or more, preferably 40 inches. A display panel of 8 inches or more, more preferably 55 inches or more, can be used. Multiple display panels can be arranged to form one display area. This allows for the use of multi-screen displays, such as electronic whiteboards and It can be used for sub-bulletin boards, electronic signs, etc.

[0250] <Configuration example 3 of information processing device> For example, it has a function to change the display method depending on the illuminance of the usage environment (see FIG. 19(D)). ) This can reduce the power consumption of a smartwatch, for example. For example, the image can be scanned so that it can be used suitably in an environment with strong external light, such as outdoors on a clear day. It can be displayed on the smart watch.

[0251] <Configuration example 4 of information processing device> The display unit 5230 has, for example, a curved surface that curves gently along the side of the housing (see FIG. 19( Alternatively, the display unit 5230 may include a display panel, and the display panel may include, for example, a front This allows you to display the information on the front and side of your mobile phone. Image information can be displayed on the sides and top without any need for a display.

[0252] <Configuration example 5 of information processing device> For example, it has a function to change the display method depending on the illuminance of the usage environment (see Figure 20(A)). ) This can reduce the power consumption of smartphones. The image can be easily transferred to a smartphone so that it can be used in bright outdoor environments such as on a sunny day. It can be displayed on the

[0253] <Configuration example 6 of information processing device> For example, it has a function to change the display method depending on the illuminance of the usage environment (see Figure 20(B)). This allows the unit to be used effectively even when exposed to strong external light that shines indoors on a sunny day. The video can then be displayed on a television system.

[0254] <Configuration example 7 of information processing device> For example, it has a function to change the display method depending on the illuminance of the usage environment (see Figure 20(C)). This allows the device to be used effectively even in environments with strong external light, such as outdoors on a clear day. Thus, the image can be displayed on the tablet computer.

[0255] <Configuration example 8 of information processing device> For example, it has a function to change the display method depending on the illuminance of the usage environment (see Figure 20(D)). This allows for optimal viewing even in environments with strong external light, such as outdoors on a clear day. Thus, the subject can be displayed on the digital camera.

[0256] <Configuration example 9 of information processing device> For example, it has a function to change the display method depending on the illuminance of the usage environment (see Figure 20(E)). This allows the device to be used effectively even in environments with strong external light, such as outdoors on a clear day. Thus, the image can be displayed on a personal computer.

[0257] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0258] (Embodiment 9) In this embodiment, a structure of an electronic device of one embodiment of the present invention will be described with reference to FIGS. Reveal.

[0259] <Electronic equipment> Fig. 23 shows a foldable electronic device 920. The electronic device 920 shown in Fig. 23 The display unit 921 includes a housing 921a, a housing 921b, a display unit 922, a hinge 923, and the like. 22 is incorporated into the housing 921a and the housing 921b.

[0260] The housings 921a and 921b are rotatably connected to each other via a hinge 923. 920 can be in a state where the housings 921a and 921b are closed, and in a state where they are open as shown in FIG. This makes it easy to carry and to use. The large display area provides excellent visibility.

[0261] Furthermore, when the housings 921a and 921b are opened, the hinge 923 is It is preferable to have a locking mechanism to prevent the angle from exceeding a predetermined angle. For example, the angle at which the door will lock (and not open any further) must be between 90 degrees and 180 degrees. Typically, the angle is 90 degrees, 120 degrees, 135 degrees, 150 degrees, or 175 degrees. This can improve convenience, safety, and reliability. .

[0262] The electronic device 920 is comprised of a housing 921a and a housing 921b connected by a hinge 923. A flexible display unit 922 is provided.

[0263] When the housing 921a and the housing 921b of the electronic device 920 are opened, the display unit 922 It is held in a curved shape. For example, the radius of curvature is preferably 1 mm or more and 50 mm or less. Preferably, the display unit 922 is held in a state where the distance is 5 mm or more and 30 mm or less. A part of the display unit 922 has pixels arranged continuously from the housing 921a to the housing 921b. are arranged, and curved surface display can be performed.

[0264] The hinge 923 has the locking mechanism described above, so that excessive force is not applied to the display unit 922. Therefore, the display unit 922 can be prevented from being damaged. Electronic devices can be realized.

[0265] The display unit 922 functions as a touch panel and can be operated with a finger or a stylus. can.

[0266] A wireless communication module is provided in either the housing 921a or the housing 921b, and an interface -Internet, LAN (Local Area Network), Wi-Fi (registered trademark) It is possible to send and receive data via a computer network such as a

[0267] The display unit 922 is preferably configured as one flexible display. This allows for continuous, uninterrupted display between the housing 921a and the housing 921b. Each of the housings 921a and 921b is provided with a display. It may also be configured so that

[0268] This embodiment may be appropriately combined with at least a part of another embodiment described in this specification. It can be implemented in combination.

[0269] For example, in this specification, when it is explicitly stated that X and Y are connected, In this case, X and Y are electrically connected, and X and Y are functionally connected. The case where X and Y are directly connected is also considered to be disclosed in this specification. Therefore, the present invention is not limited to the predetermined connection relationships, for example, the connection relationships shown in the drawings or text. Connections other than those shown in the drawings or text are also treated as if they were described in the drawings or text. do.

[0270] Here, X and Y are the object (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.). , etc.).

[0271] An example of a direct connection between X and Y is a circuit that allows electrical connection between X and Y. The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, When no external device (such as a diode, display element, light-emitting element, or load) is connected between X and Y, The elements that allow electrical connection between X and Y (e.g., switches, transistors, capacitors) elements, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) , X and Y are connected.

[0272] An example of an electrical connection between X and Y is The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more devices (such as diodes, display elements, light-emitting elements, and loads) can be connected between X and Y. It is possible. The switch has a function to control on / off. A switch can be in a conducting state (ON state) or a non-conducting state (OFF state), allowing current to flow. The switch has the function of controlling whether or not the current flows. When X and Y are electrically connected, This includes the case where Y is directly connected.

[0273] An example of a functional connection between X and Y is a function that allows the functional connection between X and Y. Circuits that perform the above functions (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (voltage power supply circuits (voltage boost circuits, voltage drop circuits, etc.), level shifter circuits that change the signal potential level, etc.) , voltage source, current source, switching circuit, amplifier circuit (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more circuits (e.g., memory circuits, control circuits, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from X If X is transmitted to Y, then X and Y are considered to be functionally connected. When X and Y are functionally connected, there is a direct connection between X and Y and a direct connection between X and Y. This also includes the case where the and are electrically connected.

[0274] In addition, if it is explicitly stated that X and Y are electrically connected, are electrically connected (i.e., there is another element or circuit between X and Y) X and Y are functionally connected (i.e., X and Y are functionally connected) and (When there is a functional connection between them via another circuit) and when X and Y are directly connected (i.e., when X and Y are connected without any other element or circuit between them) is considered to be disclosed in the present specification. If it is explicitly stated that it is connected, The same content is considered to be disclosed in the present specification.

[0275] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or (not shown), electrically connected to X, and the drain (or second terminal, etc.) of the transistor is connected to Z 2 (or not), and is electrically connected to Y, or the source of the transistor (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. The drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2. and another part of Z2 is directly connected to Y, It is possible to do so.

[0276] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor" The terminals of the transistor (or the first terminal) are electrically connected to each other. 1 terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y. It can be expressed as "connected to the source (or the first The first terminal of the transistor is electrically connected to X, and the drain of the transistor is electrically connected to the second terminal of the transistor. The transistor source (or first terminal, etc.) is electrically connected to Y, and the transistor source (or first terminal, etc.) is electrically connected to X. The drain (or second terminal, etc.) of the transistor, Y, is electrically connected in this order. " Alternatively, "X is the source (or first terminal, etc.) of the transistor. and the drain (or second terminal, etc.) are electrically connected to Y, and X, the source (or first terminal, etc.) of a transistor, the drain (or second terminal, etc.) of a transistor ), Y is provided in this order of connection. By specifying the order of connections in the circuit configuration using a simple expression method, Distinguish between the source (or first terminal, etc.) and the drain (or second terminal, etc.) of a transistor. The technical scope can be determined by the above.

[0277] Alternatively, for example, "the source (or first terminal, etc.) of a transistor" is electrically connected to X through at least a first connection path, and the first connection path is , and the second connection path is a transistor through a transistor. The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor The first connection path is a path via Z1, and the second connection path is a path between the first and second transistors. The drain (or second terminal, etc.) of the capacitor is electrically connected to Y through at least a third connection path. the third connection path does not have the second connection path, and the third connection path The connection path is the path via Z2. The source (or first terminal, etc.) of the resistor is connected to the resistor via Z1 by at least the first connection path. and electrically connected to X, and the first connection path does not have a second connection path; The second connection path has a connection path through a transistor, and (or the second terminal, etc.) is connected to Y via Z2 by at least a third connection path. The third connection path does not have the second connection path. Alternatively, the source (or first terminal, etc.) of the transistor may be at least The first electrical path is electrically connected to X through Z1. The primary path does not have a second electrical path, and the second electrical path is a From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor The drain (or second terminal, etc.) of the transistor is connected to at least a third The third electrical path is electrically connected to Y through Z2. , does not have a fourth electrical path, and the fourth electrical path is (or second terminal, etc.) to the source (or first terminal, etc.) of the transistor. Using the same expression as these examples, the circuit configuration By defining the connection path in Distinguishing between the first terminal (or the second terminal, etc.) and the drain (or the second terminal, etc.) to determine the technical scope. can be done.

[0278] These representation methods are merely examples, and the present invention is not limited to these representation methods. , Y, Z1, Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0279] In addition, the circuit diagram shows independent components as if they are electrically connected to each other. Even if the components are different, one component may have the functions of multiple components. For example, when a part of the wiring also functions as an electrode, one conductive film functions as both the wiring and the electrode. Therefore, the electrode in this specification has the functions of both components. The term "electromagnetic connection" refers to a case where one conductive film has the functions of multiple components. This also falls within the scope of the above. [Explanation of symbols]

[0280] 104 insulating film 110 insulating film 116 Insulating film 118 insulating film 122 insulating film 150 transistors 151 transistors 152 transistors 922 Display section 1503 capacity 1511 Transistor 1512 transistor 1513 Transistor 3503 capacity 3503A capacity 3503B capacity 3510 Wiring 3511 Wiring 3513 Liquid crystal elements 3514 Capacity section 3515 Capacitive Sensor Unit 3516 Gate electrode 3517 Gate wiring 3518 Contact Area 3519 Source wiring 3521 Transistor 3522 Common electrode 3522A Common Electrode 3522B Common electrode 3523 Pixel electrode 3523A Pixel electrode 3523B Pixel electrode 3524 Layer containing liquid crystal material 3525 Color Filter 3526 Wiring 3527 Sensor electrode 3529 Sensor Electrode 3530 transistor 3531 Power line 3551 Input / Output Panel 3552 Input / Output Panel 3553 Input / Output Panel 3554 Input / Output Panel 3555 Input / Output Panel 3556 Input / Output Panel 3557 Input / Output Panel 3558 Input / Output Panel 3559 Input / Output Panel 3560 Input / Output Panel 3561 Orientation film 3562 Alignment film 3572 Electrode 3573 Layer containing luminescent material 3578 Bulkhead 3581 Arrow 5230 Display section

Claims

1. a first insulating layer; a semiconductor layer having a region located above the first insulating layer and having a channel formation region of a transistor; a first conductive layer having a region in contact with a top surface of the semiconductor layer and functioning as one of a source electrode and a drain electrode of the transistor; a second insulating layer having a region located above the first conductive layer; a second conductive layer having a region located above the second insulating layer and functioning as a common electrode; a third insulating layer having a region located above the second conductive layer; a third conductive layer having a region in contact with an upper surface of the third insulating layer and a region functioning as a pixel electrode; a fourth conductive layer having a region in contact with the upper surface of the third insulating layer and made of the same material as the third conductive layer; a fifth conductive layer having a region located below the second insulating layer and functioning as a touch sensor wiring; the fourth conductive layer has a region in contact with the fifth conductive layer, the fourth conductive layer has a region overlapping with the second conductive layer in a region where the fifth conductive layer and the second conductive layer overlap, the fourth conductive layer has a region overlapping with a sixth conductive layer that is electrically connected to the semiconductor layer and has a region that functions as a source wiring; the sixth conductive layer has a region extending in a first direction; In a plan view, the semiconductor layer has a region located between the sixth conductive layer and a seventh conductive layer having a region extending in the first direction.

2. a first insulating layer; a semiconductor layer having a region located above the first insulating layer and having a channel formation region of a transistor; a first conductive layer having a region in contact with a top surface of the semiconductor layer and functioning as one of a source electrode and a drain electrode of the transistor; a second insulating layer having a region located above the first conductive layer; a second conductive layer having a region located above the second insulating layer and functioning as a common electrode; a third insulating layer having a region located above the second conductive layer; a third conductive layer having a region in contact with an upper surface of the third insulating layer and a region functioning as a pixel electrode; a fourth conductive layer having a region in contact with the upper surface of the third insulating layer and made of the same material as the third conductive layer; a fifth conductive layer having a region located below the second insulating layer and functioning as a touch sensor wiring; the second conductive layer has a region overlapping with the semiconductor layer, the third conductive layer has a region overlapping with the semiconductor layer, the fourth conductive layer has a region in contact with the fifth conductive layer, the fourth conductive layer has a region overlapping with the second conductive layer in a region where the fifth conductive layer and the second conductive layer overlap, the fourth conductive layer has a region overlapping with a sixth conductive layer that is electrically connected to the semiconductor layer and has a region that functions as a source wiring; the sixth conductive layer has a region extending in a first direction; In a plan view, the semiconductor layer has a region located between the sixth conductive layer and a seventh conductive layer having a region extending in the first direction.

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