Electromagnetic wave attenuation body, electronic device, film deposition device, and film deposition method

Abstract

To provide an electromagnetic wave attenuation body capable of improving attenuation characteristics for electromagnetic wave, an electronic device, a film deposition device, and a film deposition method.SOLUTION: An electromagnetic wave attenuation body includes a first structure. The first structure includes: a first member including a first magnetic layer and a first nonmagnetic layer with conductivity provided alternately in a first direction as a lamination direction, a second member including a second magnetic layer and a second nonmagnetic layer with conductivity provided alternately in the first direction, and a third member including a third nonmagnetic layer with conductivity. The direction from the third member to the first member is along the first direction. The direction from the third member to the second member is along the first direction. A first magnetic layer thickness of the first magnetic layer along the first direction is larger than a second magnetic layer thickness of the second magnetic layer along the first direction.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to an electromagnetic wave attenuator, an electronic device, a film forming apparatus, and a film forming method. [Background technology]

[0002] For example, electromagnetic wave attenuators such as electromagnetic shielding sheets have been proposed. There are also electronic devices that include an electromagnetic wave attenuator and a semiconductor element. It is desirable to improve the attenuation characteristics of electromagnetic waves in electromagnetic wave attenuators. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-38807 Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE INVENTION Embodiments of the present invention provide an electromagnetic wave attenuator, an electronic device, a film forming apparatus, and a film forming method that can improve the attenuation characteristics of electromagnetic waves. [Means for solving the problem]

[0005] According to an embodiment of the present invention, an electromagnetic wave attenuator includes a first structure. The first structure includes a first member including first magnetic layers and conductive first non-magnetic layers alternately arranged in a first direction, which is a stacking direction; a second member including second magnetic layers and conductive second non-magnetic layers alternately arranged in the first direction; and a third member including a conductive third non-magnetic layer. The direction from the third member to the first member is aligned with the first direction. The direction from the third member to the second member is aligned with the first direction. A first magnetic layer thickness along the first direction of the first magnetic layer is thicker than a second magnetic layer thickness along the first direction of the second magnetic layer. [Brief explanation of the drawings]

[0006] [Figure 1] 1(a) to 1(d) are schematic cross-sectional views illustrating the electromagnetic wave attenuation body according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. [Figure 3] 3(a) to 3(f) are schematic cross-sectional views illustrating the electromagnetic wave attenuation body according to the first embodiment. [Figure 4] 4(a) to 4(d) are schematic views illustrating the electromagnetic wave attenuation body according to the first embodiment. [Figure 5] FIG. 5 is a graph illustrating the characteristics of the electromagnetic wave attenuation body. [Figure 6] FIG. 6 is a schematic view illustrating a film forming apparatus according to the second embodiment. [Figure 7] FIG. 7 is a schematic view illustrating a film forming apparatus according to the second embodiment. [Figure 8] FIG. 8 is a schematic vertical cross-sectional view taken along line AA in FIG. 6, illustrating the film forming apparatus according to the second embodiment. [Figure 9] FIG. 9 is a functional block diagram illustrating a control device of the film forming apparatus according to the second embodiment. [Figure 10] FIG. 10 is a perspective view illustrating a tray on which electronic devices are arranged in the film forming apparatus according to the second embodiment. [Figure 11] FIG. 11 is a flowchart illustrating the operation of the film forming apparatus according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when showing the same part, the length and ratio may be expressed differently depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) 1(a) to 1(d) are schematic cross-sectional views illustrating the electromagnetic wave attenuation body according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating the electronic device according to the embodiment.

[0009] 1(a), an electromagnetic wave attenuation body 110 according to the embodiment is used in an electronic device 210. The electronic device 210 according to the embodiment includes the electromagnetic wave attenuation body 110 and a base body 55.

[0010] As shown in FIG. 2, in the electronic device 210 of this embodiment, an electromagnetic wave attenuator 110 is formed on a top surface 42a and a side surface 42b of a package 42 that encapsulates an electronic element 51. The package 42 that encapsulates the electronic element 51 is an example of a base 55. To obtain an attenuation effect, the electromagnetic wave attenuator 110 only needs to be formed on at least the top surface 42a of the package 42. The electromagnetic wave attenuator 110 on the side surface 42b is for grounding. The top surface 42a of the package 42 is the outer surface opposite to the surface that is mounted on a product. When placed horizontally, the top surface 42a is the highest upper surface. When mounted, the top surface 42a may or may not face upward. The side surface 42b is an outer peripheral surface formed at a different angle to the top surface 42a. The top surface 42a and the side surface 42b may form a corner or may be continuous by a curved surface.

[0011] The electronic element 51 is a surface-mounted component such as a semiconductor chip, a diode, a transistor, a capacitor, or a SAW filter. In the following explanation, an example will be described in which a semiconductor chip is used as the electronic element 51. The semiconductor chip here is configured as an integrated circuit in which a plurality of electronic elements are integrated. Hereinafter, for the convenience of explaining the manufacturing apparatus and manufacturing process, a component in a state before the electromagnetic wave attenuator 110 is formed may also be called an electronic device 210.

[0012] The electronic element 51 is mounted on the surface of the substrate 44. In the substrate 44, a circuit pattern is formed on the surface of a plate made of ceramic, glass, epoxy resin, or the like. The electronic element 51 and the circuit pattern are connected by solder.

[0013] The surface of the substrate 44 on which the electronic element 51 is mounted is sealed with synthetic resin so as to cover the electronic element 51, thereby forming the package 42. The shape of the package 42 is a substantially rectangular parallelepiped. The electromagnetic wave attenuator 110 is a film that shields electromagnetic waves.

[0014] For example, electromagnetic waves are generated in the electronic element 51. The electromagnetic wave attenuator 110 attenuates the electromagnetic waves and prevents them from being emitted to the outside. For example, the electromagnetic wave attenuator 110 prevents external electromagnetic waves from reaching the electronic element 51. The electromagnetic wave attenuator 110 is stacked on the electronic element 51, for example, as shown in FIG. 1(a).

[0015] 1(a), the electromagnetic wave attenuation body 110 includes a first structure 10A. The first structure 10A includes a first member 10, a second member 20, and a third member 30.

[0016] 1(b), the first member 10 includes first magnetic layers 11 and conductive first non-magnetic layers 12 alternately arranged in a first direction described below. For example, a plurality of first magnetic layers 11 and a plurality of conductive first non-magnetic layers 12 are provided. One of the plurality of first non-magnetic layers 12 is provided between one of the plurality of first magnetic layers 11 and another of the plurality of first non-magnetic layers 12. One of the plurality of first magnetic layers 11 is provided between one of the plurality of first non-magnetic layers 12 and another of the plurality of first non-magnetic layers 12.

[0017] The first direction is the Z-axis direction. One direction perpendicular to the Z-axis direction is the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction.

[0018] 1(c), the second member 20 includes second magnetic layers 21 and conductive second non-magnetic layers 22 alternately provided in a first direction (Z-axis direction). For example, a plurality of second magnetic layers 21 and a plurality of conductive second non-magnetic layers 22 are provided. One of the plurality of second non-magnetic layers 22 is provided between one of the plurality of second magnetic layers 21 and another of the plurality of second non-magnetic layers 21. One of the plurality of second magnetic layers 21 is provided between one of the plurality of second non-magnetic layers 22 and another of the plurality of second non-magnetic layers 22.

[0019] As shown in FIG. 1(d), the third member 30 includes a conductive third non-magnetic layer 32. In this example, the third member 30 further includes a third magnetic layer 31. The direction from the third magnetic layer 31 to the third non-magnetic layer 32 is along the first direction (Z-axis direction). In this example, for example, a plurality of third magnetic layers 31 and a plurality of conductive third non-magnetic layers 32 are provided. One of the plurality of third magnetic layers 31 is provided between one of the plurality of third magnetic layers 31 and another of the plurality of third non-magnetic layers 31. One of the plurality of third magnetic layers 31 is provided between one of the plurality of third non-magnetic layers 32 and another of the plurality of third non-magnetic layers 32.

[0020] As shown in FIG. 1(a), the electromagnetic wave attenuating body 110 may further include a second structure 10B. The direction from the second structure 10B to the first structure 10A is along the first direction (Z-axis direction). The second structure 10B includes, for example, at least one of Cr and Ni, and Fe. The second structure 10B may include, for example, stainless steel. In this example, the second structure 10B is provided between the base body 55 and the first structure 10A. In this case, the second structure 10B functions, for example, as an underlayer.

[0021] As shown in FIG. 1(a), the electromagnetic wave attenuating body 110 may further include a third structure 10C. In the first direction (Z-axis direction), the first structure 10A is located between the second structure 10B and the third structure 10C. The third structure 10C includes, for example, at least one of Cr and Ni, and Fe. The third structure 10C may include, for example, stainless steel. For example, the third structure 10C functions as, for example, a protective layer. For example, the third structure 10C functions as, for example, an oxidation suppression layer.

[0022] 1(a), in one example, the direction from the third member 30 to the first member 10 is along the first direction (Z-axis direction). In one example, the direction from the third member 30 to the second member 20 is along the first direction (Z-axis direction). The first direction (Z-axis direction) corresponds to, for example, the stacking direction.

[0023] The multiple first magnetic layers 11 and the multiple first non-magnetic layers 12 extend along the XY plane. The multiple second magnetic layers 21 and the multiple second non-magnetic layers 22 extend along the XY plane. The third magnetic layer 31 and the third non-magnetic layer 32 extend along the XY plane.

[0024] 1(a), the electromagnetic wave attenuation body 110 may be electrically connected to, for example, the ground. For example, the third member 30 may be connected to the ground by a conductive member 38 or the like.

[0025] 3(a) to 3(f) are schematic cross-sectional views illustrating the electromagnetic wave attenuation body according to the first embodiment. As shown in Figures 3(a) to 3(f), the order of the first member 10, the second member 20, and the third member 30 is arbitrary. For example, in one example, the second member 20 is located between the first member 10 and the third member 30 (see Figures 3(a) and 3(f)). In another example, the first member 10 is located between the second member 20 and the third member 30 (see Figures 3(b) and 3(d)). In another example, the third member 30 is located between the first member 10 and the second member 20 (see Figures 3(c) and 3(e)).

[0026] 1(b), the thickness (length) of the first magnetic layer 11 along the first direction (Z-axis direction) is defined as the first magnetic layer thickness t11. The thickness (length) of the first non-magnetic layer 12 along the first direction is defined as the first non-magnetic layer thickness t12. For example, the sum of the product of the number of the multiple first magnetic layers 11 and the first magnetic layer thickness t11 and the product of the number of the multiple first non-magnetic layers 12 and the first non-magnetic layer thickness t12 corresponds to the first member thickness t10 (see FIG. 1(a)) along the first direction of the first member 10.

[0027] 1(c), the thickness (length) of the second magnetic layer 21 along the first direction (Z-axis direction) is defined as the second magnetic layer thickness t21. The thickness (length) of the second non-magnetic layer 22 along the first direction is defined as the second non-magnetic layer thickness t22. For example, the sum of the product of the number of the plurality of second magnetic layers 21 and the second magnetic layer thickness t21 and the product of the number of the plurality of second non-magnetic layers 22 and the second non-magnetic layer thickness t22 corresponds to the second member thickness t20 (see FIG. 1(a)) along the first direction of the second member 20.

[0028] 1(d), the thickness (length) of the third magnetic layer 31 along the first direction (Z-axis direction) is defined as the third magnetic layer thickness t31. The thickness (length) of the third non-magnetic layer 32 along the first direction is defined as the third non-magnetic layer thickness t32. For example, the sum of the product of the number of the plurality of third magnetic layers 31 and the third magnetic layer thickness t31 and the product of the number of the plurality of third non-magnetic layers 32 and the third non-magnetic layer thickness t32 corresponds to the third member thickness t30 (see FIG. 1(a)) along the first direction of the third member 30.

[0029] As shown in FIG. 1(a), the sum of the first member thickness t10, the second member thickness t20, and the third member thickness t30 corresponds to the first structure thickness tA of the first structure 10A along the first direction. The thickness of the second structure 10B along the first direction is defined as the second structure thickness tB. The thickness of the third structure 10C along the first direction is defined as the third structure thickness tC. For example, the sum of the first structure thickness tA, the second structure thickness tB, and the third structure thickness tC corresponds to the thickness of the electromagnetic wave attenuation body 110 (thickness Te in FIG. 2).

[0030] In the embodiment, for example, the first magnetic layer thickness t11 is thicker than the second magnetic layer thickness t21. In the embodiment, for example, the crystallinity of at least a portion of the first magnetic layer 11 is higher than the crystallinity of at least a portion of the second magnetic layer 21. It has been found that an electromagnetic wave attenuator 110 including such a first magnetic layer 11 and second magnetic layer 21 can attenuate electromagnetic waves more effectively, as will be described later.

[0031] Examples of the characteristics of the electromagnetic wave attenuator will be described below. The first sample has the following configuration: In the first sample, the second structure 10B includes stainless steel, and the second structure thickness tB is about 100 nm.

[0032] In the first sample, a third member 30 is provided on the second structure 10B. The third member 30 includes a plurality of third magnetic layers 31 and a plurality of third non-magnetic layers 32. The number of the plurality of third magnetic layers 31 is 10, and the number of the plurality of third non-magnetic layers 32 is 10. The plurality of third magnetic layers 31 are NiFeCuMo layers. The plurality of third non-magnetic layers 32 are Cu layers. The third magnetic layer thickness t31 is 100 nm. The third non-magnetic layer thickness t32 is 100 nm. The third member thickness t30 is approximately 2 μm.

[0033] In the first sample, the second member 20 is provided on the third member 30. The second member 20 includes a plurality of second magnetic layers 21 and a plurality of second non-magnetic layers 22. The number of the plurality of second magnetic layers 21 is 40, and the number of the plurality of second non-magnetic layers 22 is 40. The plurality of second magnetic layers 21 are NiFeCuMo layers. The plurality of second non-magnetic layers 22 are Ta layers. The second magnetic layer thickness t21 is 50 nm. The second non-magnetic layer thickness t22 is 5 nm. The second member thickness t20 is approximately 2 μm.

[0034] In the first sample, a first member 10 is provided on a second member 20. The first member 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 12. The number of the plurality of first magnetic layers 11 is seven, and the number of the plurality of first non-magnetic layers 12 is seven. The plurality of first magnetic layers 11 are NiFeCuMo layers. The plurality of first non-magnetic layers 12 are Ta layers. The first magnetic layer thickness t11 is 300 nm. The first non-magnetic layer thickness t12 is 5 nm. The first member thickness t10 is approximately 2 μm.

[0035] In the first sample, a third structure 10C is provided on the first member 10. The third structure 10C includes stainless steel. The thickness tC of the third structure is about 300 nm. The thickness of the first sample is about 6.4 μm.

[0036] In the NiFeCuMo layer, the composition is Ni:Fe:Cu:Mo=77:14:5:4 (atomic %).

[0037] In the second sample, the first member 10 is not provided. In the second sample, the number of the second magnetic layers 21 is 73, and the number of the second non-magnetic layers 22 is 73. The second magnetic layers 21 are NiFeCuMo layers. The second non-magnetic layers 22 are Ta layers. The second magnetic layer thickness t21 is 50 nm. The second non-magnetic layer thickness t22 is 5 nm. The second member thickness t20 is approximately 4 μm. Other than the above, the configuration of the second sample is the same as that of the first sample.

[0038] For these first and second samples, voltage (dBμV) was measured as the attenuation characteristic for electromagnetic waves. In other words, 20×log10 (voltage with electromagnetic wave attenuator / 1μV) was measured. For example, the attenuation effect (dBμV) of electromagnetic waves at a frequency of 170 kHz, that is, the voltage when an electromagnetic wave attenuator is present, was measured. As a result of the measurement, the attenuation effect of the first sample was -2.4 (dBμV). On the other hand, the attenuation effect of the second sample at a frequency of 170 kHz was -2.1 (dBμV). The larger the absolute value of (dBμV), the higher the attenuation effect and the better the attenuation characteristics.

[0039] Thus, a higher damping effect is obtained in the first sample than in the second sample. Since the thickness of the first sample is substantially the same as that of the second sample, it is believed that the difference in thickness between the first member 10 and the second member 20 provided in the first sample is related to the damping effect.

[0040] The difference in damping effect between the first sample and the second sample may be related to the difference in the crystallinity of the magnetic layers in these samples. In the first sample, for example, the crystallinity of at least a portion of the first magnetic layer 11 is higher than the crystallinity of at least a portion of the second magnetic layer 21. "High crystallinity" refers to, for example, a high degree of crystallinity. "High crystallinity" refers to, for example, a high proportion (e.g., 50% or more) of a region that is occupied by regions with a crystalline structure. "High crystallinity" refers to, for example, a region that contains multiple crystal grains. "Low crystallinity" refers to, for example, a low degree of crystallinity. "Low crystallinity" refers to, for example, a low proportion (e.g., less than 50%) of a region that is occupied by regions with a crystalline structure. A "low crystallinity" state includes, for example, an amorphous state.

[0041] Examples of crystallinity will be described below.

[0042] 4(a) to 4(d) are schematic views illustrating the electromagnetic wave attenuation body according to the first embodiment. 4(a) and 4(c) illustrate the state of the first magnetic layer 11. FIGS. 4(b) and 4(d) illustrate the state of the second magnetic layer 21.

[0043] As shown in FIGS. 4(a) and 4(c), at least a portion of the first magnetic layer 11 includes first crystal grains 11g.

[0044] As shown in FIGS. 4(b) and 4(d), in the embodiment, at least a portion of the second magnetic layer 21 may not include crystal grains.

[0045] In this way, at least a portion of the first magnetic layer 11 may be crystalline, and at least a portion of the second magnetic layer 21 may be amorphous. In the amorphous portion of the second magnetic layer 21, no crystal grains are observed.

[0046] The magnetic permeability of the first magnetic layer 11, which has higher crystallinity than the second magnetic layer 21 as described above, is lower than the magnetic permeability of the second magnetic layer 21 as described above. It is believed that using multiple magnetic layers with different magnetic permeabilities improves the attenuation characteristics of electromagnetic waves. This is because permeability and coercivity have a negative correlation. For example, a first magnetic layer 11 with low permeability is thought to have a large coercivity. Furthermore, because the permeability of the first magnetic layer 11 is lower than that of the second magnetic layer 21, the coercivity of the first magnetic layer 11 is thought to be greater than the coercivity of the second magnetic layer 21, which has a higher permeability than the first magnetic layer 11. For example, since the first magnetic layer 11 has a large coercivity, it is thought that components of electromagnetic waves with high power (magnetic field strength) are effectively attenuated. Therefore, when electromagnetic waves that become noise contain many components with high power (magnetic field strength), the electromagnetic waves that become noise are effectively attenuated by the first magnetic layer 11. On the other hand, when the power (magnetic field strength) is low, the higher the magnetic permeability, the higher the attenuation effect. Therefore, when electromagnetic waves that become noise contain many components with low power (magnetic field strength), they are effectively attenuated by the second magnetic layer 21. Therefore, by using multiple magnetic layers with different magnetic permeabilities, it is thought that a high attenuation effect can be maintained even if there is a wide range in the distribution of power (magnetic field strength). This is thought to be related to the fact that the first sample exhibits higher attenuation characteristics than the second sample.

[0047] Information about the crystallinity of the first magnetic layer 11 and the second magnetic layer 21 can be obtained, for example, from a TEM (Transmission Electron Microscope) image. For example, information about the crystallinity of the first magnetic layer 11 and the second magnetic layer 21 can be obtained, for example, from an X-ray diffraction image. The above-mentioned phrase "no crystal grains are observed" means that information about the crystallinity cannot be obtained, and for example, means that no peaks are visible when observing an X-ray diffraction image.

[0048] FIG. 5 is a graph illustrating the characteristics of the electromagnetic wave attenuation body. The horizontal axis of FIG. 5 is frequency f1. The vertical axis of FIG. 5 is parameter Pa1, which corresponds to the electromagnetic wave attenuation effect. A larger parameter Pa1 corresponds to a higher attenuation effect and better attenuation characteristics. Parameter Pa1 corresponds to the electromagnetic wave attenuation effect (-dB) at frequency f1 between 10 MHz and 10 GHz. Parameter Pa1 is a parameter that indicates the degree to which electromagnetic waves are attenuated, obtained using the results of measuring the electric field strength when an electromagnetic wave attenuator is present and when no electromagnetic wave attenuator is present. This measurement was performed using an electric wire that generates electromagnetic waves of a desired frequency by passing a current through it, and a measuring device with a probe that detects the electric field strength. The (-dB) in FIG. 5 is obtained by moving the minus sign before the numerical value before the unit dB. For example, 20(-dB) is synonymous with -20(dB).

[0049] FIG. 5 illustrates the measurement results of the characteristics of the third sample SPL3, the fourth sample SPL4, and the fifth sample SPL5 in addition to the characteristics of the first sample SPL1.

[0050] In the third sample SPL3, a third member 30, a second member 20, a first member 10, and a third structure 10C are provided in this order on a second structure 10B. In the third sample SPL3, the number of second non-magnetic layers 22 in the second member 20 is 11, and the number of second magnetic layers 21 is 11. The number of first non-magnetic layers 12 in the first member 10 is 60, and the number of first magnetic layers 11 is 60. The thicknesses and materials of the second non-magnetic layers 22, second magnetic layers 21, first non-magnetic layers 12, and first magnetic layers 11 are the same as those in the first sample SPL1. The second member thickness t20 is approximately 3 μm, and the first member thickness t10 is approximately 3 μm. Other than this, the configuration of the third sample SPL3 is the same as that of the first sample SPL1.

[0051] In the fourth sample SPL4, a third member 30, a second member 20, a first member 10, and a third structure 10C are also provided in this order on a second structure 10B. In the fourth sample SPL4, the third member 30 includes a third nonmagnetic layer 32 but does not include a third magnetic layer 31. The third member 30 is a Cu layer. The thickness of the Cu layer (third nonmagnetic layer thickness t32) is 2 μm. The remaining configuration of the fourth sample SPL4 is the same as that of the third sample SPL3.

[0052] The fifth sample SPL5 does not include the first member 10, the second member 20, and the third member 30. The fifth sample SPL5 includes a Cu layer with a thickness of 5 μm.

[0053] 5, at a frequency f1 of 10 MHz or more and 100 MHz or less, the first sample SPL1 has almost the same attenuation effect as the fifth sample SPL5. The third sample SPL3 and the fourth sample SPL4 have higher attenuation characteristics than the fifth sample SPL5.

[0054] The results in Figure 5 illustrate the characteristics when the frequency f1 is 10 MHz or higher. On the other hand, the characteristics when the frequency f1 is 10 MHz or lower are, for example, as follows: At a frequency f1 of 170 kHz, the attenuation effect of the first sample SPL1 is -2.4 dBμV, the attenuation effect of the third sample SPL3 is -2.7 dBμV, and the attenuation effect of the fourth sample SPL4 is -2.2 dBμV. In contrast, the attenuation effect of the fifth sample SPL5 is -0.5 dBμV.

[0055] Thus, in the first sample SPL1, the third sample SPL3, and the fourth sample SPL4, a higher attenuation effect than that of the fifth sample SPL5 can be obtained at the frequency f1 of 10 MHz or less.

[0056] Thus, in the embodiment, a higher attenuation effect than the fifth sample SPL5 is obtained at a frequency f1 of 100 kHz or more and 100 MHz or less. In the embodiment, at a frequency f1 of 100 MHz or more, attenuation characteristics equal to or better than those of the fifth sample SPL5 are obtained. According to the embodiment, it is possible to provide an electromagnetic wave attenuator and an electronic device that can improve the attenuation characteristics for electromagnetic waves.

[0057] In the embodiment, the first magnetic layer thickness t11 is, for example, 80 nm or more and 400 nm or less. The second magnetic layer thickness t21 is, for example, 10 nm or more and less than 80 nm. When the first magnetic layer thickness t11 is 80 nm or more and 400 nm or less, high crystallinity is easily obtained in the first magnetic layer 11. When the second magnetic layer thickness t21 is 10 nm or more and less than 80 nm, for example, low crystallinity is easily obtained in the second magnetic layer 21.

[0058] For example, the first magnetic layer thickness t11 is four times or more the second magnetic layer thickness t21. Such a difference in thickness makes it easy for a difference in crystallinity to occur between the first magnetic layer thickness t11 and the second magnetic layer thickness t21.

[0059] In the embodiment, for example, the number of the plurality of first magnetic layers 11 included in the first member 10 is preferably smaller than the number of the plurality of second magnetic layers 21 included in the second member 20. Since the first magnetic layers 11 are thicker than the second magnetic layers 21, a small number of the plurality of first magnetic layers 11 makes it easier to maintain a thin overall thickness of the electromagnetic wave attenuation body.

[0060] In the embodiment, for example, the first magnetic layer thickness t11 is preferably equal to or greater than half the first non-magnetic layer thickness t12 of the first non-magnetic layer 12 along the first direction (Z-axis direction). This makes it easier to obtain, for example, high damping characteristics. For example, the second magnetic layer thickness t21 is preferably equal to or greater than half the second non-magnetic layer thickness t22 of the second non-magnetic layer 22 along the first direction. This makes it easier to obtain, for example, high damping characteristics.

[0061] The first non-magnetic layer thickness t12 is, for example, 10 nm or less. The second non-magnetic layer thickness t22 is, for example, 10 nm or less. These thin thicknesses make it easier to maintain a thin overall thickness of the electromagnetic wave attenuation body, for example.

[0062] At least one of the first non-magnetic layer 12 and the second non-magnetic layer 22 contains, for example, at least one selected from the group consisting of Ta, Cr, and Ti. When the second non-magnetic layer 22 contains one of these materials, for example, low crystallinity is easily obtained in the second magnetic layer 21. It is preferable that the second non-magnetic layer 22 contains the same material as the first non-magnetic layer 12. This, for example, simplifies the manufacturing process and makes it easier to achieve high production efficiency.

[0063] In the embodiment, the third non-magnetic layer 32 preferably contains Cu. This makes it easier to obtain low electrical resistivity and high attenuation characteristics in the high frequency range. The third non-magnetic layer 32 has a lower electrical resistivity than the first non-magnetic layer 12 and the second non-magnetic layer 22, making it easier to obtain high attenuation characteristics in the high frequency range.

[0064] In the embodiment, at least one of the first magnetic layer 11 and the second magnetic layer 21 includes a soft magnetic material. For example, at least one of the first magnetic layer 11 and the second magnetic layer 21 includes Ni and Fe. At least one of the first magnetic layer 11 and the second magnetic layer 21 includes, for example, Ni, Fe, Cu, and Mo. In this material including Ni, Fe, Cu, and Mo, the Ni composition ratio is, for example, 75 atomic % or more and 80 atomic % or less, the Cu composition ratio is, for example, 1 atomic % or more and 6 atomic % or less, the Mo composition ratio is 3 atomic % or more and 5 atomic % or less, and the Fe composition ratio is the remainder.

[0065] The composition of the first magnetic layer 11 is preferably substantially the same as the composition of the second magnetic layer 21. This, for example, simplifies the manufacturing process and makes it easier to achieve high production efficiency.

[0066] For example, the first magnetic layer 11 and the second magnetic layer 21 contain Ni, Fe, Cu, and Mo. The Ni composition ratio in the first magnetic layer 11 is 0.9 to 1.1 times the Ni composition ratio in the second magnetic layer 21. For example, the Fe composition ratio in the first magnetic layer 11 is 0.9 to 1.1 times the Fe composition ratio in the second magnetic layer 21.

[0067] The third member 30 may be composed of a third non-magnetic layer 32 without including the third magnetic layer 31. Alternatively, as in the first embodiment, the third member 30 may include the third magnetic layer 31 in addition to the third non-magnetic layer 32 (e.g., a Cu layer). In this case, the direction from the third magnetic layer 31 to the third non-magnetic layer 32 is along the first direction (Z-axis direction) (see FIG. 1(d)). The third magnetic layer thickness t31 of the third magnetic layer 31 along the first direction may be the same as the third non-magnetic layer thickness t32 of the third non-magnetic layer 32 along the first direction. For example, the third magnetic layer thickness t31 may be 0.75 to 1.25 times the third non-magnetic layer thickness t32.

[0068] In electronic devices (e.g., semiconductor devices), it is required to suppress the effects of electromagnetic waves. For example, an electromagnetic wave attenuator is provided in the electronic device. In the electromagnetic wave attenuator, it is required to attenuate electromagnetic waves in high frequency bands and electromagnetic waves in low frequency bands. It is required that the electromagnetic wave attenuator is thin. When the electromagnetic wave attenuator is thin, for example, it becomes easier to miniaturize the electronic device. When the electromagnetic wave attenuator is thin, it improves the productivity of the electromagnetic wave attenuator. For example, it is possible to reduce material costs and reduce costs. For example, it is possible to shorten the film formation time.

[0069] For example, it is desirable for the electromagnetic wave attenuator to have high characteristics against electromagnetic waves in a high frequency band of 10 MHz or higher and a low frequency band of 100 kHz or higher but lower than 10 MHz. Electromagnetic waves in the low frequency band are absorbed and attenuated by the magnetic layer. For this reason, it is thought that the attenuation characteristics in the low frequency band can be improved by, for example, thickening the magnetic layer included in the electromagnetic wave attenuator (to a thickness of 10 μm to 50 μm, for example). However, this method makes it difficult to miniaturize the electronic device.

[0070] In the embodiment, for example, a first member 10, a second member 20, and a third member 30 are provided. The third member 30 attenuates, for example, electromagnetic noise in a high frequency band (high frequency noise). The first member 10 and the second member 20 attenuate, for example, electromagnetic noise in a low frequency band (low frequency noise). Two types of members are provided as layers that attenuate low frequency noise. This can improve, for example, the attenuation characteristics of low frequency noise.

[0071] According to the embodiment, an electromagnetic wave attenuator that effectively attenuates electromagnetic waves in both high and low frequency bands can be provided, thereby achieving high attenuation characteristics, particularly in the low frequency band, while maintaining a thin thickness (for example, 10 μm or less).

[0072] (Second embodiment) 6 to 10 are schematic views illustrating the film forming apparatus according to the second embodiment. Fig. 6 is a plan view. Fig. 7 is a perspective view. Fig. 8 is a longitudinal cross-sectional view taken along line AA in Fig. 6. Fig. 9 is a block diagram. Fig. 10 is a perspective view. As shown in Fig. 6, a film formation apparatus 310 according to the embodiment includes a container 68, a transfer unit 130, a first film formation unit 61, a second film formation unit 62, a third film formation unit 63, a load lock unit 60, and a control unit 70. In this example, the film formation apparatus 310 includes a fourth film formation unit 64 and a fifth film formation unit 65.

[0073] The film forming apparatus 310 is an apparatus that forms the electromagnetic wave attenuation body 110 by sputtering on the outer surface of the package 42 of each electronic device 210. In the film forming apparatus 310 of this embodiment, as shown in Fig. 7, when the turntable 131 rotates, the electronic device 210 on the tray Tr held by the holder 133 moves along a circular trajectory. In the film forming apparatus 310 of this embodiment, when the electronic device 210 passes a position facing the sputtering source 104, particles sputtered from the target of the sputtering source 104 are attached to the electronic device 210, thereby forming a film.

[0074] The container 68 can maintain the interior of the container 68 at a pressure lower than atmospheric pressure.

[0075] 8, the container 68 is a container into which the sputtering gas G is introduced. The sputtering gas G is a gas for causing ions generated by plasma generated by application of electric power to collide with the target Tg, thereby performing sputtering on the package 42 of the electronic device 210. For example, an inert gas such as argon gas can be used as the sputtering gas G.

[0076] The space inside the container 68 forms a vacuum chamber 121. The vacuum chamber 121 is airtight. The vacuum chamber 121 is a space that can be made into a vacuum by reducing the pressure. For example, as shown in FIGS. 7 and 8, the vacuum chamber 121 is a cylindrical sealed space.

[0077] The container 68 has an exhaust port 122 and an inlet 124. The exhaust port 122 is an opening for ensuring the flow of gas between the vacuum chamber 121 and the outside and for performing exhaust E. This exhaust port 122 is formed, for example, in the bottom of the container 68. An exhaust unit 123 is connected to the exhaust port 122. The exhaust unit 123 has piping, a pump, a valve, etc. (not shown). The inside of the vacuum chamber 121 is depressurized by the exhaust process by this exhaust unit 123.

[0078] The inlet 124 is an opening for introducing the sputtering gas G near the target Tg in the vacuum chamber 121. A gas supply unit 125 is connected to the inlet 124. One gas supply unit 125 is provided for each target Tg. The gas supply unit 125 has a gas supply source for the sputtering gas G, a pump, a valve, and the like, in addition to piping, which are not shown. The sputtering gas G is introduced into the vacuum chamber 121 from the inlet 124 by the gas supply unit 125.

[0079] 6, the first to fifth film forming units 61 to 65 and the transfer unit 130 are provided in a container 68. The control unit 70 controls the first to fifth film forming units 61 to 65, the transfer unit 130, and the load lock unit 60.

[0080] The conveying unit 130 is provided inside the container 68. The conveying unit 130 is a device that circulates and conveys the electronic device 210 along a circular trajectory. The trajectory along which the electronic device 210 moves by the conveying unit 130 as described above is called the conveying path L. The circulatory conveyance means repeatedly moving the electronic device 210 around along the circular trajectory. The conveying unit 130 has a turntable 131, a motor 132, and a holder 133.

[0081] The turntable 131 is a circular plate. The motor 132 is a driving source that applies a driving force to the turntable 131, causing it to rotate around the center of the circle as an axis. The holder 133 is a component that holds the tray Tr transported by the transport unit 130. That is, the electronic device 210 is held by the holder 133 via the tray Tr. As shown in FIG. 10 , multiple electronic devices 210 are aligned and spaced apart on a tape T stretched horizontally within a frame F, which is a substantially rectangular frame. This forms a film on the top surface 42 a and the side surface 42 b. Only the top surface of the tape T is adhesive, and the electronic device 210 is attached to that surface. Multiple frames F, each with an electronic device 210 arranged on it, are prepared in this manner. The frame F is placed on a tray Tr, which is a substantially rectangular flat plate with raised edges. However, a single electronic device 210 may be held by the holder 133. In this manner, the electronic device 210 is positioned on the rotary table 131 by the holder 133 .

[0082] The multiple holders 133 are arranged at equal intervals. For example, the holders 133 are arranged parallel to a tangent to a circle in the circumferential direction of the turntable 131 and are provided at equal intervals in the circumferential direction. More specifically, the holders 133 are grooves, holes, protrusions, jigs, holders, etc. that hold the trays Tr or electronic devices 210. The holders 133 can also be configured using an electrostatic chuck, a mechanical chuck, an adhesive chuck, or a combination of these with grooves, holes, protrusions, jigs, holders, trays, etc. In this embodiment, six holders 133 are provided. Therefore, six trays Tr or electronic devices 210 are held on the turntable 131 at 60° intervals. However, there may be one or more holders 133.

[0083] The first to fifth film forming units 61 to 65 form a non-magnetic layer (non-magnetic film) or a magnetic layer (magnetic film) on the object to be processed transported by the transport unit .

[0084] Hereinafter, when there is no need to distinguish between the multiple film forming units (first to fifth film forming units 61 to 65, etc.), they will be described as film forming unit PR (see FIG. 7). As shown in FIG. 8, the film forming unit PR has a sputtering source 104, a partition unit 105, and a power supply unit 106. Hereinafter, the object to be processed will be described as electronic device 210 in a state before electromagnetic wave attenuation body 110 is formed.

[0085] The sputtering source 104 is a supply source of film forming material that deposits the film forming material on the electronic device 210 by sputtering to form a film. The sputtering source 104 has a target Tg, a backing plate 142, and an electrode 143. The target Tg is formed of the film forming material that is deposited on the electronic device 210 to form a film. The target Tg is provided at a position facing the transport path L and spaced apart from the transport path L. As shown in FIG. 6 , as the target Tg of this embodiment, three targets (first to fifth targets 61a to 65a, each consisting of three targets) are provided in each of the multiple film forming units. However, the number of targets may be one, two, or four or more. Hereinafter, when there is no need to distinguish between the targets Tg (61a, 62a, 63a, 64a, and 65a), they will be referred to as the target Tg. The bottom side of the target Tg faces, at a distance, the electronic device 210 that is moved by the transport unit 130. The target Tg has, for example, a cylindrical shape. The target Tg may have an elongated cylindrical shape, a rectangular prism shape, or other shapes.

[0086] The backing plate 142 is a member that holds the target Tg. The electrode 143 is a conductive member that applies power to the target Tg from outside the container 68. The sputtering source 104 may be appropriately provided with a magnet, a cooling mechanism, or the like, as needed.

[0087] As shown in Fig. 8, a plurality of such sputtering sources 104 are provided in the circumferential direction on the top lid of the container 68. In the examples of Figs. 7, 5 and 8, five sputtering sources 104 are provided.

[0088] Examples of the target Tg of the first to fifth film forming units 61 to 65 will be described below.

[0089] The first film formation unit 61 includes a first target 61a. The second film formation unit 62 includes a second target 62a. The first target 61a and the second target 62a include materials to become the first magnetic layer 11 and the second magnetic layer 21 of the first structure 10A, and include a magnetic substance. For example, the first target 61a and the second target 62a include Ni, Fe, Cu, and Mo. In one example, the composition ratio of the first target 61a may be substantially the same as the composition ratio of the second target 62a.

[0090] The third film deposition unit 63 includes a third target 63a. The third target 63a includes a material that will become the first nonmagnetic layer 12 and the second nonmagnetic layer 22 of the first structure 10A. The third target 63a includes, for example, a nonmagnetic material. In one example, the third target 63a includes Ta.

[0091] The fourth film deposition unit 64 includes a fourth target 64a. The fourth target 64a includes a material that will become the third nonmagnetic layer 32 of the first structure 10A. The fourth target 64a includes, for example, a nonmagnetic material. In one example, the fourth target 64a includes Cu.

[0092] The fifth film forming unit 65 includes a fifth target 65a. The fifth target 65a includes, for example, a non-magnetic material. In one example, the fifth target 65a includes a material (for example, stainless steel) that will become the second structure 10B and the third structure 10C.

[0093] The partitioning section 105 is a member that separates film-forming positions M1 to M5 where the electronic devices 210 are formed by the sputtering source 104. Hereinafter, when the film-forming positions M1 to M5 are not distinguished from one another, they will be referred to as film-forming position M (see FIG. 7). As shown in FIG. 7, the partitioning section 105 has rectangular wall plates 105a and 105b. The wall plates 105a and 105b are arranged radially from the center of the circumference of the transfer path L. The wall plates 105a and 105b are arranged radially from, for example, the rotation center axis 67 (see FIG. 6) of the turntable 131 of the transfer section 130. The wall plates 105a and 105b are provided, for example, on the ceiling of the vacuum chamber 121 at positions that sandwich the target Tg. The lower end of the partitioning section 105 faces the turntable with a gap therebetween that allows the electronic devices 210 to pass through. The partition 105 can prevent the sputtering gas G and the film forming material from diffusing into the vacuum chamber 121 .

[0094] The film formation position M is a space that includes the target Tg of the sputtering source 104 and is partitioned by the partition 105. More specifically, as shown in Fig. 6, the film formation position M is a space that is surrounded by a sector shape by the wall plates 105a and 105b of the partition 105, the inner surface 126 of the outer peripheral wall of the container 68, and the outer surface 127 of the inner peripheral wall, when viewed from above. The horizontal range of the film formation position M is the area partitioned by the pair of wall plates 105a and 105b.

[0095] The film formation material is deposited as a film on the electronic device 210 passing through a position facing the target Tg at the film formation position M. This film formation position M is, for example, an area where most of the film formation is performed. Even in areas outside the film formation position M, there is leakage of the film formation material from the film formation position M. For this reason, even in areas outside the film formation position M, some of the film deposition may be performed.

[0096] The power supply unit 106 is a component that applies power to the target Tg. By applying power to the target Tg using this power supply unit 106, the sputtering gas G is converted into plasma, and the film formation material can be deposited on the electronic device 210. In this embodiment, the power supply unit 106 is, for example, a DC power supply that applies a high voltage. In the case of an apparatus that performs high-frequency sputtering, the power supply unit 106 can also be an RF power supply. The rotary table 131 has the same potential as the grounded container 68. By applying a high voltage to the target Tg side, a potential difference is generated between the rotary table 131 and the target Tg side.

[0097] The multiple film deposition units PR selectively deposit film materials to form films containing layers of multiple types of film materials. In particular, in this embodiment, sputtering sources 104 corresponding to different types of film materials are provided, and films containing layers of multiple types of film materials are formed by selectively depositing the film materials. The state in which sputtering sources 104 corresponding to different types of film materials are provided includes a case in which some of the film deposition units PR included in all of the film deposition units PR contain a common film deposition material, while the remaining film deposition units PR contain a different film deposition material. In this embodiment, the film deposition material common to the multiple film deposition units PR includes a magnetic material. Selectively depositing film materials one by one means that a film deposition unit PR using one type of film deposition material is depositing a film while a film deposition unit PR using another type of film deposition material is not depositing a film. A film deposition unit PR or film deposition position M during film deposition refers to a film deposition unit PR or film deposition position M in which power is applied to the target Tg of the film deposition unit PR and film deposition is possible on the electronic device 210.

[0098] In this embodiment, five film forming units (first to fifth film forming units 61 to 65) are provided in the transport direction of the transport path L. Film forming positions M1 to M5 correspond to the five film forming units (first to fifth film forming units 61 to 65).

[0099] At least a portion of the electromagnetic wave attenuation body 110 described in relation to the first embodiment is formed by such a film formation apparatus 310. For example, at least a portion of the first structure 10A is formed by the film formation apparatus 310. The first structure 10A includes a first member 10 and a second member 20. As already described, the first member 10 includes a plurality of first magnetic layers 11 and a plurality of first non-magnetic layers 12. One of the plurality of first non-magnetic layers 12 is located between the plurality of first magnetic layers 11. The second member 20 includes a plurality of second magnetic layers 21 and a plurality of second non-magnetic layers 22. One of the plurality of second non-magnetic layers 22 is located between the plurality of second magnetic layers 21. The thickness of one of the plurality of first magnetic layers 11 is thicker than the thickness of one of the plurality of second magnetic layers 21.

[0100] The first structure 10A formed by the film formation apparatus 310 may include a third member 30. The third member 30 may include a plurality of third magnetic layers 31 and third non-magnetic layers 32, for example.

[0101] The first magnetic layer 11 and the second magnetic layer 21 are formed by at least one of the first film deposition unit 61 and the second film deposition unit 62. The first non-magnetic layer 12 and the second non-magnetic layer 22 are formed by the third film deposition unit 63.

[0102] The fourth film deposition unit 64 forms, for example, the third non-magnetic layer 32. The third magnetic layer 31 may be formed by at least one of the first film deposition unit 61 and the second film deposition unit 62.

[0103] The fifth film forming unit 65 forms materials that will become the second structure 10B and the third structure 10C.

[0104] The load lock unit 60 is a device that carries unprocessed electronic devices 210 or trays Tr carrying electronic devices 210 from the outside into the vacuum chamber 121 by a transport means (not shown) while maintaining the vacuum of the vacuum chamber 121, and carries processed electronic devices 210 or trays Tr out of the vacuum chamber 121. A known structure can be applied to this load lock unit 60, so a description thereof will be omitted.

[0105] The control unit 70 controls the operation of the film forming unit, including the control of the movement of the object to be processed.

[0106] The control unit 70 is a device that controls each part of the film forming apparatus 310. The control unit 70 can be configured, for example, by a dedicated electronic circuit or a computer that operates according to a predetermined program. That is, the control unit 70 is programmed with control contents, such as control of the introduction and exhaust of the sputtering gas G into the vacuum chamber 121, control of the power supply to the sputtering source 104, and control of the rotation of the turntable 131. The control performed by the control unit 70 is executed by a processing device such as a PLC (Programmable Logic Controller) or a CPU (Central Processing Unit). The control performed by the control unit 70 can accommodate a wide variety of film forming specifications.

[0107] The controlled contents include, for example, the initial exhaust pressure of the film forming apparatus 310, the selection of the sputtering source 104, the power applied to the target Tg, the flow rate, type, introduction time and exhaust time of the sputtering gas G, and the film forming time.

[0108] An example of the configuration of the control unit 70 for causing each unit to operate as described above will be described with reference to Fig. 9. Fig. 9 is, for example, a virtual functional block diagram. The control unit 70 includes, for example, a mechanism control unit 71, a power supply control unit 72, a storage unit 73, a setting unit 74, and an input / output control unit 75.

[0109] The mechanism control unit 71 is a processing unit that controls controlled units such as drive sources, valves, switches, and power supplies. The controlled units are included in, for example, the exhaust unit 123, the gas supply unit 125, the motor 132 of the transfer unit 130, and the load lock unit 60.

[0110] The control unit 70 selectively controls the film forming units PR so that, for example, while a film forming unit PR of one type of film forming material is forming a film, the film forming units PR of other film forming materials are not forming a film.

[0111] The storage unit 73 is a component that stores information necessary for control in this embodiment.

[0112] The setting unit 74 is a processing unit that sets information input from the outside in the storage unit 73. The input / output control unit 75 is an interface that controls signal conversion and input / output between each unit to be controlled.

[0113] An input device 76 and an output device 77 are connected to the control unit 70. The input device 76 is an input means for an operator to operate the film forming apparatus 310 via the control unit 70. The input means includes a switch, a touch panel, a keyboard, a mouse, or the like. For example, the selection of the sputtering source 104 to perform film formation can be input using the input means.

[0114] The output device 77 is an output means for making information for checking the status of the apparatus visible to an operator. The output means includes, for example, a display, a lamp, a meter, etc. For example, the output device 77 can display the deposition position M corresponding to the sputtering source 104 performing deposition in a manner that distinguishes it from other deposition positions M.

[0115] The following describes an example of film formation by the film formation apparatus 310. The following operations are performed, for example, under the control of the control unit 70. In the following example, the above-described first sample SPL1 is formed.

[0116] FIG. 11 is a flowchart illustrating the operation of the film forming apparatus according to the second embodiment. First, before step S105, the electronic device 210, which is the object to be processed, is introduced into the container 68 via the load lock unit 60.

[0117] The exhaust unit 123 evacuates the vacuum chamber 121 to reduce the pressure, thereby creating a vacuum. The gas supply unit 125 of the film formation unit PR supplies sputtering gas G to the periphery of the target Tg. The turntable 131 rotates and reaches a predetermined rotation speed. As a result, the electronic device 210 held by the holder 133 moves in a circular trajectory on the transfer path L and passes a position facing the sputtering source 104.

[0118] 11, the second structure 10B is formed (step S105). For example, the fifth film forming unit 65 forms a layer of stainless steel.

[0119] The specific operation of step S105 is as follows. The power supply unit 106 of only the fifth film formation unit 65 applies power to the target Tg of the fifth film formation unit 65. This converts the sputtering gas G into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg, scattering particles of the film formation material. As a result, particles of the film formation material are deposited on the surface of the electronic device 210 passing through the film formation position M5 of the fifth film formation unit 65, forming a film. Here, a stainless steel layer is formed. At this time, the electronic device 210 passes through the film formation positions M1 to M4 of the first to fourth film formation units 61 to 64. The electronic device 210 is heated by radiant heat from the plasma generated by applying power to the target at the film formation position where the film formation process is performed. Since no power is applied to the targets Tg of the first to fourth film formation units 61 to 64, no film formation process is performed at the film formation positions M1 to M4, and the electronic device 210 is not heated. The electronic device 210 is also not heated in areas other than the film formation positions M1 to M4. In these unheated areas, the electronic device 210 releases heat. When the film formation time by the film formation unit PR has elapsed, the fifth film formation unit 65 is stopped. In other words, the power supply unit 106 stops applying power to the targets Tg.

[0120] 11, the third non-magnetic layer 32 is formed (step S111), and the third magnetic layer 31 is formed (step S112). At least a portion of the third non-magnetic layer 32 (e.g., a Cu layer) is formed by the fourth film deposition unit 64. At least a portion of the third magnetic layer 31 (e.g., a NiFeCuMo layer) is formed by at least one of the first film deposition unit 61 and the second film deposition unit 62.

[0121] The specific operation of step S111 is as follows. The power supply unit 106 of the fourth film formation unit 64 applies power to the target Tg of the fourth film formation unit 64. This converts the sputtering gas G into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg, scattering particles of the film formation material. As a result, particles of the film formation material are deposited on the surface of the electronic device 210 passing through the film formation position M4 of the fourth film formation unit 64, forming a film. Here, a Cu layer that will become the third nonmagnetic layer 32 is formed. At this time, the electronic device 210 passes through the film formation positions M1 to M3 and M5 of the first to third and fifth film formation units 61 to 63 and 65. Because no power is applied to the targets Tg of the first to third and fifth film formation units 61 to 63 and 65, no film formation process is performed at the film formation positions M1 to M3 and M5, and the electronic device 210 is not heated. The electronic device 210 is not heated in areas other than the film formation position M4 either. In these unheated areas, the electronic device 210 emits heat. When the film formation time by the fourth film formation unit 64 has elapsed, the fourth film formation unit 64 is stopped. In other words, the power supply unit 106 stops applying power to the target Tg.

[0122] Then, in step S112, the power supply unit 106 of the first film formation unit 61 applies power to the target Tg of the first film formation unit 61. This converts the sputtering gas G into plasma at the film formation position M1. In the sputtering source 104, ions generated by the plasma collide with the target Tg, scattering particles of the film formation material. As a result, particles of the film formation material are deposited on the surface of the electronic device 210 as it passes through the film formation position M1, forming a film. Here, a NiFeCuMo layer that will become the third magnetic layer 31 is formed. At this time, the electronic device 210 passes through the film formation positions M2 to M5 of the second to fifth film formation units 62 to 65. Because no power is applied to the target Tg in the second to fifth film formation units 62 to 65, no film formation process is performed and the electronic device 210 is not heated. The electronic device 210 is not heated in areas other than the film formation position M1 either. In these unheated areas, the electronic device 210 emits heat.

[0123] When the film formation time by the first film formation unit 61 has elapsed, the first film formation unit 61 is stopped. That is, the application of power to the target Tg by the power supply unit 106 is stopped.

[0124] Thereafter, the fourth film deposition unit 64 again deposits a film on the deposited third magnetic layer 31 to form a Cu layer that will become another third non-magnetic layer 32. Furthermore, the formation of the Cu layer and the formation of the NiFeCuMo layer are alternately performed as described above.

[0125] In this way, by repeating film formation by the fourth film formation unit 64 and film formation by the first film formation unit 61, a third member 30 is formed in which a large number of third non-magnetic layers 32 (Cu layers) and third magnetic layers 31 (NiFeCuMo layers) are stacked.

[0126] The number of times n3 of formation of either the third non-magnetic layer 32 or the third magnetic layer 31 is compared with a predetermined value v3 (step S113). If the number of times n3 is smaller than the value v3, the process returns to step S111. In the first sample SPL1, the value v3 is 10. If the number of times n3 is equal to or greater than the value v3, the process proceeds to the following step S121. The "number of times of formation" can be determined, for example, from the number of times or the application time of power to the target Tg.

[0127] 11, the second non-magnetic layer 22 is formed (step S121), and the second magnetic layer 21 is formed (step S122). At least a portion of the second non-magnetic layer 22 (e.g., a Ta layer) is formed in the third film deposition unit 63. At least a portion of the second magnetic layer 21 (e.g., a NiFeCuMo layer) is formed in at least one of the first film deposition unit 61 and the second film deposition unit 62.

[0128] The specific operation of step S121 is as follows. The power supply unit 106 of the third film formation unit 63 applies power to the target Tg of the third film formation unit 63. This converts the sputtering gas G into plasma. In the sputtering source 104, ions generated by the plasma collide with the target Tg, scattering particles of the film formation material. As a result, particles of the film formation material are deposited on the surface of the electronic device 210 passing through the film formation position M3 of the third film formation unit 63, forming a film. Here, a Ta layer that will become the second nonmagnetic layer 22 is formed. At this time, the electronic device 210 passes through the film formation positions M1, M2, M4, and M5 of the first, second, fourth, and fifth film formation units 61, 62, 64, and 65. Because no power is applied to the target Tg in these film formation units, no film formation process is performed and the electronic device 210 is not heated. The electronic device 210 is also not heated in areas other than the film formation position M3. In these unheated areas, the electronic device 210 radiates heat.

[0129] When the film formation time by the third film formation unit 63 has elapsed, the third film formation unit 63 is stopped, that is, the application of power to the target Tg by the power supply unit 106 is stopped.

[0130] Then, the power supply unit 106 of at least one of the first film formation unit 61 and the second film formation unit 62 applies power to the target Tg. The following describes an example of applying power to the first film formation unit 61. As a result, the sputtering gas G is converted into plasma at the film formation position M1. In the sputtering source 104, ions generated by the plasma collide with the target Tg, scattering particles of the film formation material. Therefore, as the electronic device 210 passes through the film formation position M1 of the first film formation unit 61, particles of the film formation material are deposited on the surface of the electronic device 210, forming a film. Here, a NiFeCuMo layer that will become the second magnetic layer 21 is formed. At this time, the electronic device 210 passes through the film formation positions M2 to M5 of the second to fifth film formation units 62 to 65. Since no power is applied to the target Tg in the second to fifth film formation units 62 to 65, no film formation process is performed and the electronic device 210 is not heated. The electronic device 210 is also not heated in areas other than the film formation position M1. In these unheated areas, the electronic device 210 radiates heat.

[0131] When the film formation time by the first film formation unit 61 has elapsed, the first film formation unit 61 is stopped. That is, the application of power to the target Tg by the power supply unit 106 is stopped.

[0132] Thereafter, a film is formed again by the third film forming unit 63 on the formed second magnetic layer 21, thereby forming a Ta layer that will become another second non-magnetic layer 22. Furthermore, the formation of the Ta layer and the formation of the NiFeCuMo layer are alternately performed as described above.

[0133] In this way, by repeating film formation by the third film formation unit 63 and the first film formation unit 61, the second member 20 is formed in which a large number of second non-magnetic layers 22 (Ta layers) and second magnetic layers 21 (NiFeCuMo layers) are stacked.

[0134] The number of times n2 of forming either the second non-magnetic layer 22 or the second magnetic layer 21 is compared with a predetermined value v2 (step S123). If the number of times n2 is smaller than the value v2, the process returns to step S121. In the first sample SPL1, the value v2 is 40. If the number of times n2 is equal to or greater than the value v2, the process proceeds to the following step S131.

[0135] 11, the first non-magnetic layer 12 is formed (step S131), and the first magnetic layer 11 is formed (step S132). At least a portion of the first non-magnetic layer 12 (e.g., a Ta layer) is formed in the third film deposition unit 63. At least a portion of the first magnetic layer 11 (e.g., a NiFeCuMo layer) is formed in at least one of the first film deposition unit 61 and the second film deposition unit 62.

[0136] The specific operations of steps S131 and S132 are similar to those of steps S121 and S122, and therefore will not be described again. By repeating film formation by the third film formation unit 63 and film formation by the first film formation unit 61, a first structure 10A is formed in which a large number of first non-magnetic layers 12 (Ta layers) and first magnetic layers 11 (NiFeCuMo layers) are stacked. The number of times n1 of formation of any one of these first non-magnetic layers 12 and first magnetic layers 11 is compared with a predetermined value v1 (step S133). If the number of times n1 is smaller than the value v1, the process returns to step S131. In the first sample SPL1, the value v1 is 7. If the number of times n1 is equal to or greater than the value v1, the process proceeds to the following step S141.

[0137] 11, the third structure 10C is formed (step S141). For example, a stainless steel layer is formed by the fifth film forming unit 65. The specific operation of step S141 is the same as that of step S105.

[0138] As described above, in the film forming apparatus 310 according to the embodiment, the number of film forming units (first film forming unit 61 and second film forming unit 62) for forming the magnetic layer is greater than the number of film forming units (third film forming unit 63) for forming the non-magnetic layer to be stacked on the magnetic layer.

[0139] In forming such magnetic layers and non-magnetic layers, their thicknesses are appropriately controlled. As already explained, the thickness of one of the plurality of first magnetic layers 11 (first magnetic layer thickness t11) is thicker than the thickness of one of the plurality of second magnetic layers 21 (second magnetic layer thickness t21). When forming such two types of magnetic layers with different thicknesses, the control unit 70 performs, for example, the following control.

[0140] The control unit 70 causes the first film deposition unit 61 to form a portion of one of the plurality of first magnetic layers 11, and then causes the second film deposition unit 62 to form another portion of that one of the plurality of first magnetic layers 11. Alternatively, the control unit 70 causes the first film deposition unit 61 to form one of the plurality of first magnetic layers 11, and then causes the second film deposition unit 62 to form another one of the plurality of first magnetic layers 11.

[0141] The control unit 70 causes the third film deposition unit 63 to form a plurality of first nonmagnetic layers 12.

[0142] As described above, when forming a thick first magnetic layer 11, a portion of the single first magnetic layer 11 may be formed by the first film deposition unit 61, and the remainder may be formed by the second film deposition unit 62. That is, when forming one first magnetic layer 11, power is applied to the targets Tg of the first film deposition unit 61 and the second film deposition unit 62, and the electronic device 210 is caused to pass through the film deposition positions M1 and M2. In this way, one first magnetic layer 11 is deposited by the first film deposition unit 61 and the second film deposition unit 62.

[0143] Alternatively, some of the multiple first magnetic layers 11 may be formed by the first film formation unit 61, and the rest of the multiple first magnetic layers 11 may be formed by the second film formation unit 62. That is, when forming one first magnetic layer 11, power is applied to the target Tg (first target 61a) of the first film formation unit 61, and the electronic device 210 is caused to pass through the film formation position M1. After the formation of one first magnetic layer 11 is completed, when forming another first magnetic layer 11, power is applied to the target Tg (second target 62a) of the second film formation unit 62, and the electronic device 210 is caused to pass through the film formation position M2. In this way, the multiple first magnetic layers 11 are formed by either the first film formation unit 61 or the second film formation unit 62.

[0144] In this case, the control unit 70 causes one of the first film deposition unit 61 and the second film deposition unit 62 to form one of the plurality of second magnetic layers 21. The control unit 70 causes the other of the first film deposition unit 61 and the second film deposition unit 62 to form another of the plurality of second magnetic layers 21. The control unit 70 causes the third film deposition unit 63 to form the plurality of second non-magnetic layers 22.

[0145] In this way, when forming the first magnetic layer 11 and the second magnetic layer 21 having different thicknesses, the operations of the first film deposition unit 61 and the second film deposition unit 62 may be changed. This makes it easier to uniform the target consumption between the first target 61a and the second target 62a, for example. As a result, the life of each target can be extended, and the number of maintenance operations for target replacement can be reduced. In addition, for example, it becomes easier to obtain the first magnetic layer 11 and the second magnetic layer 21 having more uniform characteristics. In this way, it is possible to manufacture, with higher productivity, an electromagnetic wave attenuator and an electronic device that can improve the electromagnetic wave attenuation characteristics.

[0146] Since heat can be released even during film formation, low-temperature sputtering is possible, and a layer with low crystallinity and in which crystals do not easily grow can be formed as the second magnetic layer 21. The first magnetic layer 11 is thicker than the second magnetic layer 21. Therefore, the film formation time of the first magnetic layer 11 is longer than the film formation time of the second magnetic layer 21. The heating time of the first magnetic layer 11 is longer than the heating time of the second magnetic layer 21. Crystals grow easily in the first magnetic layer 11. Therefore, as described above in the first embodiment, the crystallinity of the first magnetic layer 11 can be made higher than that of the second magnetic layer 21.

[0147] (Third embodiment) The third embodiment relates to a film formation method. The film formation method performs the process illustrated in FIG. 11. The film formation method according to the embodiment forms the first structure 10A through the following steps: After forming a portion of one of the plurality of first magnetic layers 11 in a first film formation unit 61, another portion of the one of the plurality of first magnetic layers 11 is formed in a second film formation unit 62. Alternatively, one of the plurality of first magnetic layers 11 is formed in the first film formation unit 61, and another of the plurality of first magnetic layers 11 is formed in the second film formation unit 62. A plurality of first non-magnetic layers 12 are formed in a third film formation unit 63. This facilitates uniform target consumption between the first target 61a and the second target 62a. Furthermore, for example, it is easier to obtain a first magnetic layer 11 and a second magnetic layer 21 with more uniform characteristics. An electromagnetic wave attenuator and an electronic device that can improve the electromagnetic wave attenuation characteristics can be manufactured with higher productivity.

[0148] In the embodiment, for example, when forming the second magnetic layer 21 or the third magnetic layer 31, some of the multiple first magnetic layers 11 may be formed in the first film deposition unit 61, and the rest of the multiple first magnetic layers 11 may be formed in the second film deposition unit 62. That is, power may be applied to the targets Tg of the first film deposition unit 61 and the second film deposition unit 62, and the electronic device 210 may be caused to pass through the film deposition positions M1 and M2. Because targets made of magnetic material are difficult to sputter and have a low film deposition rate, the film deposition rate can be increased by operating multiple film deposition units.

[0149] According to the embodiments, it is possible to provide an electromagnetic wave attenuator, an electronic device, a film forming apparatus, and a film forming method that can improve the attenuation characteristics of electromagnetic waves.

[0150] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element, such as the members, magnetic layers, non-magnetic layers, and electronic elements included in the electromagnetic wave attenuator or electronic device, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0151] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0152] In addition, all electromagnetic wave attenuators, electronic devices, film-forming apparatuses, and film-forming methods that can be implemented by a person skilled in the art by making appropriate design modifications based on the electromagnetic wave attenuators, electronic devices, film-forming apparatuses, and film-forming methods described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0153] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0154] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0155] DESCRIPTION OF SYMBOLS 10...first member, 10A-10C...first to third structures, 11...first magnetic layer, 11g...first crystal grain, 11gs...length, 12...first non-magnetic layer, 20...second member, 21...second magnetic layer, 22...second non-magnetic layer, 30...third member, 31...third magnetic layer, 32...third non-magnetic layer, 38...conductive member, 42...package, 42a...top surface, 42b...side surface, 43...electrode, 44...substrate, 51...electronic element, 55...base, 60...load lock unit, 61-65...first to fifth film forming units, 61a-65a...first to fifth targets, 67...rotation central axis, 68...container, 70...control unit, 71...mechanism control unit, 72...power supply control unit, 73...Memory unit, 74...Setting unit, 75...Input / output control unit, 76...Input device, 77...Output device, 104...Sputtering source, 105...Partition unit, 105a, 105b...Wall panel, 106...Power supply unit, 110...Electromagnetic wave attenuator, 121...Vacuum chamber, 122...Exhaust port, 123...Exhaust unit, 124...Inlet, 125...Gas supply unit, 126...Inner surface, 127...Outer surface, 130...Transport unit, 131...Rotary table, 132...Motor, 133...Holding unit, 142...Backing plate, 143...Electrode, 210...Electronic device, 310...Film formation device, E...Exhaust, F...Frame, G...Sputtering gas, L...Transport path, M, M1 to M5...Film formation position, PR...Film formation unit, Pa1...Parameter, SPL1...first sample, SPL3-SPL5...third to fifth samples, T...tape, Te...thickness, Tg...target, Tr...tray, f1...frequency, n1-n3...number of times, t10...first member thickness, t11...first magnetic layer thickness, t12...first non-magnetic layer thickness, t20...second member thickness, t21...second magnetic layer thickness, t22...second non-magnetic layer thickness, t30...third member thickness, t31...third magnetic layer thickness, t32...third non-magnetic layer thickness, tA-tC...first to third structure thickness, v1-v3...value

Claims

1. a first member including first magnetic layers and conductive first non-magnetic layers alternately provided in a first direction which is a stacking direction; a second member including second magnetic layers and conductive second non-magnetic layers alternately provided in the first direction; a third member including a conductive third non-magnetic layer; a first structure including: a direction from the third member to the first member along the first direction; a direction from the third member to the second member along the first direction; An electromagnetic wave attenuator, wherein a first magnetic layer thickness, which is the thickness of the first magnetic layer along the first direction, is greater than a second magnetic layer thickness, which is the thickness of the second magnetic layer along the first direction.

2. 2. The electromagnetic wave attenuation body according to claim 1, wherein the crystallinity of at least a portion of said first magnetic layer is higher than the crystallinity of at least a portion of said second magnetic layer.

3. a first member including first magnetic layers and conductive first non-magnetic layers alternately provided in a first direction which is a stacking direction; a second member including second magnetic layers and conductive second non-magnetic layers alternately provided in the first direction; a third member including a conductive third non-magnetic layer; a first structure including: a direction from the third member to the first member along the first direction; a direction from the third member to the second member along the first direction; An electromagnetic wave attenuator, wherein the crystallinity of at least a portion of the first magnetic layer is higher than the crystallinity of at least a portion of the second magnetic layer.

4. 4. The electromagnetic wave attenuation body according to claim 2, wherein the at least part of the first magnetic layer is crystalline, and the at least part of the second magnetic layer is amorphous.

5. the thickness of the first magnetic layer is 80 nm or more and 400 nm or less; 5. The electromagnetic wave attenuator according to claim 1, wherein the second magnetic layer has a thickness of 10 nm or more and less than 80 nm.

6. the thickness of the first nonmagnetic layer is 10 nm or less; 6. The electromagnetic wave attenuator according to claim 5, wherein the second non-magnetic layer has a thickness of 10 nm or less.

7. 7. The electromagnetic wave attenuation body according to claim 1, wherein at least one of the first non-magnetic layer and the second non-magnetic layer contains at least one selected from the group consisting of Ta, Cr, and Ti.

8. 8. The electromagnetic wave attenuator according to claim 1, wherein at least one of the first magnetic layer and the second magnetic layer contains Ni, Fe, Cu, and Mo.

9. the Ni composition ratio in the first magnetic layer is 0.9 to 1.1 times the Ni composition ratio in the second magnetic layer, 9. The electromagnetic wave attenuator according to claim 8, wherein the Fe composition ratio in the first magnetic layer is 0.9 to 1.1 times the Fe composition ratio in the second magnetic layer.

10. 9. The electromagnetic wave attenuator according to claim 1, wherein the composition of the first magnetic layer is substantially the same as the composition of the second magnetic layer.

11. 11. The electromagnetic wave attenuator according to claim 1, wherein the third non-magnetic layer contains Cu.

12. the third member further includes a third magnetic layer, 12. The electromagnetic wave attenuator according to claim 1, wherein the direction from the third magnetic layer to the third non-magnetic layer is along the first direction.

13. Further comprising a second structure; a direction from the second structure to the first structure is along the first direction; 13. The electromagnetic wave attenuation body according to claim 1, wherein the second structure contains at least one of Cr and Ni, and Fe.

14. Further comprising a third structure, In the first direction, the first structure is located between the second structure and the third structure, 14. The electromagnetic wave attenuation body according to claim 13, wherein the third structure includes at least one of Cr and Ni, and Fe.

15. An electromagnetic wave attenuator according to any one of claims 1 to 14, An electronic element; An electronic device comprising:

16. a container capable of maintaining an atmosphere reduced in pressure below atmospheric pressure; a first film forming unit, a second film forming unit, and a third film forming unit, each of which is provided in the container and has a sputtering source for depositing a film forming material on a processing object by sputtering to form an electromagnetic wave attenuation body; a control unit that controls the first film deposition unit, the second film deposition unit, and the third film deposition unit; Equipped with The electromagnetic wave attenuator has a first structure, The first structure is a first member including a plurality of first magnetic layers and a plurality of first non-magnetic layers, wherein one of the plurality of first non-magnetic layers is located between the plurality of first magnetic layers; a second member including a plurality of second magnetic layers and a plurality of second non-magnetic layers, wherein one of the plurality of second non-magnetic layers is located between the plurality of second magnetic layers; wherein a thickness of one of the plurality of first magnetic layers is greater than a thickness of one of the plurality of second magnetic layers, and when forming the first structure, the control unit forming a part of one of the plurality of first magnetic layers with the first film deposition unit and then forming another part of one of the plurality of first magnetic layers with the second film deposition unit, or forming one of the plurality of first magnetic layers with the first film deposition unit and then forming another of the plurality of first magnetic layers with the second film deposition unit; a film forming apparatus for causing the third film forming unit to form the plurality of first non-magnetic layers;

17. a transport unit provided in the container for circulating and transporting the object to be processed along a circular path; a partition section that partitions film formation positions where films are formed on the target object by the sputtering sources of the first film formation section, the second film formation section, and the third film formation section; Furthermore, The film forming apparatus according to claim 16, wherein the control unit causes the workpiece to pass through a film forming position where a film of the one type of film forming material is formed on the workpiece while depositing the one type of film forming material on the workpiece, causes the workpiece to pass through an area occupied by an area other than the film forming position where a film of the one type of film forming material is formed on the workpiece, and causes the workpiece to reach the film forming position where a film of the one type of film forming material is formed again on the workpiece.

18. A first structure including: a first member including a plurality of first magnetic layers and a plurality of first non-magnetic layers, wherein one of the plurality of first non-magnetic layers is located between the plurality of first magnetic layers; and a second member including a plurality of second magnetic layers and a plurality of second non-magnetic layers, wherein one of the plurality of second non-magnetic layers is located between the plurality of second magnetic layers, wherein a thickness of one of the plurality of first magnetic layers is greater than a thickness of one of the plurality of second magnetic layers, forming a part of one of the plurality of first magnetic layers in a first film deposition unit and then forming another part of the one of the plurality of first magnetic layers in the second film deposition unit, or forming one of the plurality of first magnetic layers in the first film deposition unit and then forming another one of the plurality of first magnetic layers in the second film deposition unit; forming the plurality of first nonmagnetic layers in the third film deposition unit; forming one of the plurality of second magnetic layers by one of the first film deposition unit and the second film deposition unit; The film forming method further comprises forming the plurality of second non-magnetic layers in the third film forming unit.

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