Information processing device and process condition prediction method

Abstract

To provide a technique for predicting a process condition for providing a desired film thickness based on a deposition result to a smaller number of wafers.SOLUTION: An information processing device which forms a plurality of regions in a processing container in a height direction and predicts a process condition of a substrate processing device capable of controlling a state of a gas for each region comprises an acquisition section which acquires a first deposition result of performing deposition processing on a first wafer of which the process condition is to be predicted in a first layout in the processing container, a computation section which computes changes in film thicknesses of the first wafer and a second wafer based on the first deposition result and a second deposition result of performing deposition processing on a non-processed second wafer in the first layout in the processing container, and a prediction section which predicts a process condition for providing a desired film thickness when performing the deposition processing in the first wafer in a second layout based on a third deposition result of performing deposition processing of second wafers of a larger number than that in the first layout in a second layout in the processing container and the computed changes in the film thicknesses of the first wafer and the second wafer.SELECTED DRAWING: Figure 12

Description

[Technical Field]

[0001] The present disclosure relates to an information processing apparatus and a process condition prediction method. [Background technology]

[0002] Batch-type substrate processing apparatuses are known that perform film deposition processing on semiconductor wafers (hereinafter referred to as wafers). Although batch-type substrate processing apparatuses can efficiently perform film deposition processing on wafers, it is difficult to ensure uniformity in the film deposition results. For example, Patent Document 1 discloses a processing system and processing method that can adjust the gas flow rate and ensure uniformity in the film thickness deposited on the wafer surface. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 4464979 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for predicting process conditions for achieving a desired film thickness based on film formation results for a smaller number of wafers. [Means for solving the problem]

[0005] One aspect of the present disclosure is an information processing device that predicts process conditions for a substrate processing apparatus that forms multiple regions in a processing vessel in the vertical direction and is capable of controlling the gas state for each of the regions, the information processing device having: an acquisition unit that acquires a first film formation result obtained by performing a film formation process on a first wafer for which the process conditions are to be predicted using a first layout in the processing vessel; a calculation unit that calculates changes in film thickness of the first wafer and the second wafer based on the first film formation result and a second film formation result obtained by performing a film formation process on a second wafer before processing using the first layout in the processing vessel; and a prediction unit that predicts the process conditions for achieving a desired film thickness when the first wafer is subjected to a film formation process using the second layout based on a third film formation result obtained by performing a film formation process on a larger number of the second wafers using the second layout in the processing vessel and the calculated changes in film thickness of the first wafer and the second wafer. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to provide a technique for predicting process conditions for achieving a desired film thickness based on film formation results for a smaller number of wafers. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a configuration diagram of an example of a substrate processing system according to an embodiment of the present invention. [Figure 2] FIG. 2 is a diagram illustrating a hardware configuration of an example of a computer. [Figure 3] FIG. 2 is a hardware configuration diagram of an example of a substrate processing apparatus according to the present embodiment. [Figure 4] FIG. 2 is a hardware configuration diagram of an example of a substrate processing apparatus according to the present embodiment. [Figure 5] FIG. 1 is a schematic diagram of an example of a substrate processing apparatus. [Figure 6] FIG. 6 is a diagram illustrating an example of a problem to be solved when predicting the gas flow rate required to form a desired film thickness on a fully charged device wafer in a film forming process in a substrate processing apparatus in which the gas concentration and gas decomposition state in the processing container shown in FIG. 5 are not uniform in the inter-surface direction. [Figure 7] FIG. 10 is a diagram illustrating an example of a problem that arises when predicting the gas flow rate required to form a desired film thickness on a fully charged device wafer in a film forming process in a substrate processing apparatus in which the gas concentration and gas decomposition state in the processing container are not uniform in the inter-surface direction. [Figure 8] FIG. 10 is a diagram illustrating an example of predicting the gas flow rate required to form a desired film thickness on a fully charged device wafer in a film forming process in a substrate processing apparatus in which the gas concentration and gas decomposition state in the processing container are uniform in the inter-surface direction. [Figure 9] 10A and 10B are diagrams illustrating an example for explaining elimination of wafer dependency of film thickness on gas flow rate. [Figure 10] 10A and 10B are diagrams illustrating an example for explaining the elimination of the dependency of the film thickness on the wafer layout with respect to the gas flow rate. [Figure 11] 10A and 10B are diagrams illustrating an example for explaining elimination of wafer dependency of film thickness on gas flow rate. [Figure 12] FIG. 2 is a functional block diagram of an example of an equipment controller according to the present embodiment. [Figure 13] FIG. 10 is a diagram illustrating an example of a model that associates a gas flow rate with a film thickness resulting from film formation. [Figure 14] 10 is a flowchart illustrating an example of processing in the substrate processing system according to the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Non-limiting exemplary embodiments of the present disclosure will now be described with reference to the drawings.

[0009] <System configuration> 1 is a configuration diagram of an example of a substrate processing system 1 according to this embodiment. The substrate processing system 1 in FIG. 1 includes a substrate processing apparatus 10, an apparatus controller 12, a measuring apparatus 14, a server apparatus 16, and an operator terminal 18. The substrate processing apparatus 10, the apparatus controller 12, and the measuring apparatus 14 are installed in a manufacturing factory 2. The server apparatus 16 and the operator terminal 18 may be installed in the manufacturing factory 2 or outside the manufacturing factory 2.

[0010] The operator terminal 18 is an information processing terminal such as a PC (Personal Computer) or a smartphone operated by an operator such as a person in charge of the substrate processing apparatus 10 installed in the manufacturing factory 2.

[0011] The substrate processing apparatus 10, the apparatus controller 12, the measuring apparatus 14, the server apparatus 16, and the operator terminal 18 are communicably connected via networks 20 and 22 such as the Internet or a LAN (Local Area Network).

[0012] The substrate processing apparatus 10 performs processing corresponding to each step of the substrate manufacturing process (film formation, etching, ashing, cleaning, etc.). The substrate processing apparatus 10 may be, for example, a semiconductor manufacturing apparatus, a heat treatment apparatus, or a film formation apparatus. The substrate processing apparatus 10 performs processing corresponding to each step of the substrate manufacturing process in accordance with control commands (process conditions) output from, for example, an apparatus controller 12.

[0013] The process conditions are conditions for the substrate manufacturing process. The process conditions are a combination of parameters for controlling (adjusting) the control targets (control knobs) of the substrate processing apparatus 10. The process conditions include parameters for adjusting the flow rates of gases.

[0014] The equipment controller 12 has a function of a man-machine interface that receives instructions for the substrate processing apparatus 10 from an operator and provides the operator with information related to the substrate processing apparatus 10. The equipment controller 12 receives sensor data output from a plurality of sensors installed in the substrate processing apparatus 10. The equipment controller 12 outputs process conditions to the substrate processing apparatus 10.

[0015] 1 is provided for each substrate processing apparatus 10, it may be provided for each of a plurality of substrate processing apparatuses 10. The apparatus controller 12 may be provided inside or outside the housing of the substrate processing apparatus 10.

[0016] The measuring device 14 is a measuring device such as a film thickness measuring device, a sheet resistance measuring device, or a particle measuring device that measures the results of film formation performed by the substrate processing apparatus 10 according to process conditions. For example, the measuring device 24 measures the adhesion (film thickness) of a film on a substrate such as a wafer on which the substrate processing apparatus 10 has performed film formation according to process conditions, as an example of the film formation results. The film formation results may be refractive index, impurity concentration, roughness, electrical property results (resistivity), etc.

[0017] As will be described later, the server device 16 may receive data on process conditions and data on film formation results of the substrate processing apparatus 10 that performed a film formation process according to the process conditions, and store the data as a process log for each process (for each run). The server device 16 may also receive data on film formation results from the measuring device 14. Note that the data on process conditions and data on film formation results of the substrate processing apparatus 10 that performed a film formation process according to the process conditions may be received by the equipment controller 12 or the operator terminal 18, and stored as a process log for each run. The equipment controller 12 or the operator terminal 18 may also receive data on film formation results from the measuring device 14.

[0018] By using the stored process log, the equipment controller 12, the server device 16, or the operator terminal 18 predicts process conditions such as gas flow rates required to achieve a desired film thickness when a film is formed on a wafer (an example of a first wafer) with unknown gas consumption, as will be described later. The wafer with unknown gas consumption is, for example, a device wafer (an example of a product wafer).

[0019] The equipment controller 12 and the server device 16 may display information about the substrate processing apparatus 10 on the operator terminal 18, or may notify the operator of the operator terminal 18 by email or the like. At least one of the equipment controller 12, the server device 16, and the operator terminal 18 has a function to predict, based on the layout of the device wafers loaded on the wafer boat, the process conditions of the substrate processing apparatus 10 required to achieve a desired film thickness when a film is formed using that layout, as described below. The layout of the device wafers loaded on the wafer boat may be, for example, the number of device wafers loaded on the wafer boat, or the arrangement of the device wafers loaded on the wafer boat. The equipment controller 12, the server device 16, and the operator terminal 18 in FIG. 1 are an example of an information processing apparatus according to this embodiment.

[0020] 1 is just an example, and there are various system configurations depending on the application and purpose. The division of the devices such as the substrate processing device 10, the device controller 12, the measuring device 14, the server device 16, and the operator terminal 18 in FIG. 1 is just an example.

[0021] For example, the substrate processing system 1 can have various configurations, such as a configuration in which two or more of the substrate processing device 10, device controller 12, measuring device 14, server device 16, and worker terminal 18 are integrated, or a configuration in which they are further divided.

[0022] <Hardware configuration> <Device Controller, Server Device, and Operator Terminal> The equipment controller 12, server device 16, and operator terminal 18 shown in Fig. 1 may be realized by a computer having the hardware configuration shown in Fig. 2. Fig. 2 is a hardware configuration diagram of an example of a computer 500.

[0023] 2 includes an input device 501, an output device 502, an external I / F (interface) 503, a RAM (random access memory) 504, a ROM (read only memory) 505, a CPU (central processing unit) 506, a communication I / F 507, and an HDD (hard disk drive) 508, all of which are interconnected by a bus B. The input device 501 and the output device 502 may be connected and used when necessary.

[0024] The input device 501 is a keyboard, mouse, touch panel, etc., and is used by an operator to input operation signals. The output device 502 is a display, etc., and displays the results of processing by the computer 500. The communication I / F 507 is an interface that connects the computer 500 to the networks 20 and 22 shown in Figure 1. The HDD 508 is an example of a non-volatile storage device that stores programs and data.

[0025] The external I / F 503 is an interface with an external device. The computer 500 can read from a recording medium 503a such as an SD (Secure Digital) memory card via the external I / F 503. The external I / F 503 may also be able to write to the recording medium 503a such as an SD memory card via the external I / F 503.

[0026] The ROM 505 is an example of a non-volatile semiconductor memory (storage device) that stores programs and data. The RAM 504 is an example of a volatile semiconductor memory (storage device) that temporarily stores programs and data. The CPU 506 is an arithmetic unit that reads programs and data from a storage device such as the ROM 505 or HDD 508 onto the RAM 504 and executes processing to realize overall control and functions of the computer 500.

[0027] The equipment controller 12, the server device 16, and the operator terminal 18 of the substrate processing system 1 shown in FIG. 1 execute programs on the computer 500 shown in FIG. 2 to realize various functions described below.

[0028] <<Substrate Processing Apparatus>> The substrate processing apparatus 10 shown in Fig. 1 may be realized by, for example, a substrate processing apparatus 10A having a hardware configuration shown in Fig. 3. Fig. 3 is a diagram showing the hardware configuration of an example of the substrate processing apparatus 10A according to this embodiment. The substrate processing apparatus 10 is a film formation apparatus that forms a film on a substrate W such as a wafer by an ALD (Atomic Layer Deposition) method by alternately supplying two or more types of processing gases.

[0029] The substrate processing apparatus 10A includes a processing vessel 110, such as a cylindrical reaction tube with a ceiling and an open bottom, which is entirely made of, for example, quartz.

[0030] A cylindrical metallic flange 120 is airtightly connected to the opening at the bottom of the processing vessel 110 via a sealing member (not shown) such as an O-ring. The flange 120 supports the bottom of the processing vessel 110.

[0031] A wafer boat 130 capable of loading a large number of substrates W (e.g., 25 to 150 substrates W) in multiple stages is inserted into the processing vessel 110 from below the flange portion 120. The wafer boat 130 is an example of a substrate holder. In this manner, a large number of substrates W can be accommodated substantially horizontally in the processing vessel 110 with spacing therebetween in the vertical direction. The wafer boat 130 is made of, for example, quartz. The wafer boat 130 has, for example, three rods 131, and can support a large number of substrates W by grooves (not shown) formed in the rods 131.

[0032] A metal lid 132 is provided below the flange 120 to open and close the opening at the bottom of the flange 120. The lid 132 is configured to be movable up and down together with the wafer boat 130 by a lifting mechanism (not shown) such as a boat elevator (not shown). A seal member (not shown) is provided between the periphery of the lid 132 and the bottom of the flange 120 to maintain airtightness inside the processing vessel 110.

[0033] A heat insulator 133 made of quartz is provided between the wafer boat 130 and the lid 132. The rotation mechanism 134 rotates the wafer boat 130 and the heat insulator 133 around a vertical axis via a rotation shaft 135. The rotation shaft 135 airtightly penetrates the lid 132 and connects the rotation mechanism 134 and the heat insulator 133.

[0034] In this manner, the wafer boat 130 and the lid 132 are raised and lowered as a unit by the lifting mechanism, and are inserted into and removed from the processing vessel 110. The wafer boat 130 is rotated about a vertical axis by the rotation mechanism 134. The substrate processing apparatus 10A may also be configured to process the substrates W without rotating the wafer boat 130.

[0035] A cylindrical heating mechanism 140 is provided around the processing vessel 110. The processing vessel 110, the flange portion 120, and the heating mechanism 140 are supported by a base plate 143 that extends in the horizontal direction.

[0036] The heating mechanism 140 includes a cylindrical insulating member 141 with a ceiling and an open bottom, and a heater 142 disposed on the inner circumferential surface of the insulating member 141. The heating mechanism 140 heats the processing vessel 110 by radiant heat and thermal convection from the heater 142. The heating mechanism 140 controls the temperature of the processing vessel 110 to a desired temperature. As a result, the substrate W in the processing vessel 110 is heated by radiant heat from the wall surface of the processing vessel 110, etc. The heating mechanism 140 heats the processing vessel 110 and the substrate W to a desired temperature.

[0037] The substrate processing apparatus 10A also includes a gas supply unit 150A that supplies gas into the processing chamber 110 and a gas exhaust unit 160A that exhausts gas from the processing chamber 110.

[0038] Here, the processing vessel 110 includes a cylindrical processing vessel body 111 with a ceiling, a gas supply chamber 112, a pipe 113 which is a supply-side pipe, and a flange 114. The processing vessel body 111 is cylindrical with a ceiling, and a wafer boat 130 is inserted into it.

[0039] The gas supply chamber 112 is formed such that one end of the side surface of the processing vessel body 111 bulges outward along the length direction of the processing vessel body 111. The internal space of the gas supply chamber 112 is formed to be in communication with the internal space of the processing vessel body 111.

[0040] One end of the pipe 113 is connected to the gas supply chamber 112, extends horizontally (in the radial direction of the processing vessel body 111), and the other end extends to an outer periphery of the heating mechanism 140. A flange 114 is provided at the other end of the pipe 113.

[0041] An injector 1200 is disposed in the gas supply chamber 112 and the piping 113. The gas supply unit 150A includes the gas supply chamber 112, the piping 113, the injector 1200, a gas supply source 151, a flow rate adjuster 152, an on-off valve 153, a supply path 154, and a gas injector heater (not shown).

[0042] The gas supply source 151 supplies gas. The flow rate adjustment unit 152 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied from the gas supply source 151. The on-off valve 153 switches between supplying and stopping the gas from the gas supply source 151 into the processing container 110. The supply path 154 connects the gas supply source 151 and the piping 113, and the flow rate adjustment unit 152 and the on-off valve 153 are arranged along the supply path 154.

[0043] The supply path 154 and the pipe 113 are connected outside the heating mechanism 140. The connection between the supply path 154 and the pipe 113 is airtightly connected via a seal member 155 such as an O-ring. The injector 1200 is disposed between the gas supply chamber 112 and the pipe 113. Gas is supplied to the injector 1200 from the supply path 154, and the injector 1200 discharges the supplied gas into the processing vessel 110. The gas injector heater heats the pipe 113.

[0044] The gas exhaust unit 160A includes an exhaust pipe 125 provided on the sidewall of the flange unit 120, a vacuum pump 161, a pressure adjustment unit 162, and an exhaust path 163. Thus, the gas inside the processing vessel 110 is exhausted to the outside of the processing vessel 110 by the gas exhaust unit 160A. The pressure adjustment unit 162 adjusts the pressure inside the processing vessel 110 to a desired pressure.

[0045] The injector 1200 has a discharge part 1210A. The discharge part 1210A has an internal space through which gas can flow and has a cylindrical shape with closed upper and lower ends. When the injector 1200 is attached to the substrate processing apparatus 10A, the discharge part 1210A is disposed in the gas supply chamber 112 and is a pipe extending in the height direction of the processing vessel 110.

[0046] The discharge part 1210A is provided with gas discharge holes communicating with the internal space. A plurality of gas discharge holes are provided in the discharge part 1210A in the height direction of the processing vessel 110. Although the discharge part 1210A has been described as having a cylindrical shape, it may be, for example, a cylindrical shape with an elliptical cross-sectional area or a cylindrical shape with a polygonal cross-sectional area. In this way, the gas supplied from the gas supply source 151 is supplied into the processing vessel 110 through the gas discharge holes of the discharge part 1210A.

[0047] The same type of gas is supplied to the multiple pipes 113 arranged in the height direction of the processing vessel body 111. On the other hand, different gases may be supplied to the pipes 113 arranged in the circumferential direction of the processing vessel body 111.

[0048] Furthermore, by providing the pipe 113 horizontally from the side, it is possible to reduce heating of the gas in the injector 1200 due to heat from the processing vessel body 111. This improves the temperature controllability of the temperature of the gas discharged from the gas discharge holes.

[0049] Furthermore, by supplying one gas into the processing vessel 110 from multiple pipes 113, the gas flow rate and / or gas temperature can be controlled in the height direction. In this way, the substrate processing apparatus 10A can control the gas flow rate and / or gas temperature for each region (zone) in the height direction, so that the gas concentration and gas decomposition state in the processing vessel 110 can be made uniform in the inter-surface direction.

[0050] The substrate processing apparatus 10A can adjust the gas supplied to the processing vessel 110. That is, the substrate processing apparatus 10A forms a plurality of regions (zones) in the height direction of the processing vessel 110. Each region corresponds to an injector 1200. As shown in FIG. 3, the substrate processing apparatus 10A can individually control the flow rate of gas supplied to each pipe 113 in the height direction by the flow rate adjuster 152. This allows the substrate processing apparatus 10A to control the flow rate of gas supplied to each of the plurality of regions.

[0051] Furthermore, the substrate processing apparatus 10A can individually control the temperature of the gas to be supplied by individually controlling the gas injector heaters provided corresponding to the vertical pipes 113. This allows the substrate processing apparatus 10A to control the temperature of the gas to be supplied to each of the multiple regions.

[0052] An exhaust slit 2000 is disposed on the side of the inner tube facing the injector 1200. Therefore, the gas supplied into the processing vessel 110 from the gas discharge holes of the discharge unit 1210A passes between the substrates W supported on the wafer boat 130 toward the exhaust slit 2000 and is exhausted to the outside of the processing vessel 110 via the exhaust pipe 125. This enables the substrate processing apparatus 10A to improve the uniformity of the flow rate and temperature of the gas supplied by the side flow, thereby improving the uniformity of substrate processing.

[0053] The substrate processing apparatus 10 shown in Fig. 1 may be realized by, for example, a substrate processing apparatus 10B having a hardware configuration shown in Fig. 4. Fig. 4 is a diagram showing an example of the hardware configuration of the substrate processing apparatus 10B according to this embodiment. Note that the substrate processing apparatus 10B shown in Fig. 4 is similar to the substrate processing apparatus 10A shown in Fig. 3 except for some parts, and therefore a description thereof will be omitted where appropriate.

[0054] The substrate processing apparatus 10B includes a gas supply unit 150A that supplies gas into the processing vessel 110 and a gas exhaust unit 160B that exhausts gas from the processing vessel 110. The gas supply unit 150A is similar to the gas supply unit 150A in Fig. 3. The processing vessel 110 includes a cylindrical processing vessel body 111 with a ceiling, a gas supply chamber 112, piping 113, a flange 114, a gas exhaust chamber 115, piping 116 which is an exhaust-side piping, and a flange 117.

[0055] The gas exhaust chamber 115 is formed such that the other end of the side surface of the processing vessel body 111 bulges outward along the length direction of the processing vessel body 111. The internal space of the gas exhaust chamber 115 is formed to communicate with the internal space of the processing vessel body 111.

[0056] One end of the piping 116 communicates with the gas exhaust chamber 115, extends horizontally (in the radial direction of the processing vessel body 111) and penetrates the side surface of the heating mechanism 140, and the other end extends to the outer periphery of the heating mechanism 140. A flange 117 is provided at the other end of the piping 116. An ejector 1300 is disposed in the gas exhaust chamber 115 and the piping 116.

[0057] The gas exhaust unit 160B includes a gas exhaust chamber 115, a pipe 116, a vacuum pump 161, a pressure adjustment unit 162, an exhaust path 163, and an ejector 1300. Gas inside the processing vessel 110 is exhausted to the outside of the processing vessel 110 by the gas exhaust unit 160B. The pressure adjustment unit 162 adjusts the pressure inside the processing vessel 110 to a desired pressure. The pipe 116 and the exhaust path 163 are connected outside the heating mechanism 140. In addition, the connection between the pipe 116 and the exhaust path 163 is airtightly connected via a seal member 165 such as an O-ring. The ejector 1300 is disposed between the gas exhaust chamber 115 and the pipe 116.

[0058] The ejector 1300 has a suction section 1310. The suction section 1310 has an internal space through which gas can flow and has a cylindrical shape with closed upper and lower ends. When the ejector 1300 is attached to the substrate processing apparatus 10B, the suction section 1310 is disposed in the gas exhaust chamber 115 and is a pipe extending in the height direction of the processing vessel 110. The suction section 1310 has a gas suction hole communicating with the internal space. A plurality of gas discharge holes are provided in the suction section 1310 in the height direction of the processing vessel 110. Although the suction section 1310 has been described as having a cylindrical shape, it may also have a cylindrical shape with an elliptical cross-sectional area or a cylindrical shape with a polygonal cross-sectional area, for example.

[0059] The transfer unit 1320 is a pipe having an internal space through which gas can flow, and one end of the pipe is connected to the suction unit 1310 so that gas can flow therethrough, and the other end of the pipe is connected to the discharge unit so that gas can flow therethrough. When the ejector 1300 is attached to the substrate processing apparatus 10B, the transfer unit 1320 is disposed inside the pipe 116. Although the transfer unit 1320 is illustrated as having a cylindrical shape, it may be, for example, a pipe with an elliptical cross-sectional area or a pipe with a polygonal cross-sectional area.

[0060] The transfer part 1320 is formed in a straight pipe shape. As a result, gas sucked in through the gas suction hole of the suction part 1310 passes through the straight pipe-shaped transfer part 1320 and is quickly exhausted to the exhaust part. The exhaust part is a connection part connected to the exhaust path 163 and exhausts the gas to the exhaust path 163. In this way, the gas inside the processing vessel 110 flows from the gas suction hole of the ejector 1300 through the suction part 1310, the transfer part 1320, and the exhaust part in this order, and is exhausted to the exhaust path 163.

[0061] The substrate processing apparatus 10B can adjust the flow rates of gas supplied to and exhausted from the processing vessel 110. That is, the substrate processing apparatus 10B forms multiple regions (zones) in the height direction of the processing vessel 110. Each region corresponds to an injector 1200 and an ejector 1300. As shown in FIG. 4 , the substrate processing apparatus 10B can individually control the flow rate of gas supplied to each pipe 113 in the height direction by the flow rate adjuster 152, and can also control the flow rate of gas exhausted from each pipe 116 in the height direction by the ejector 1300. Furthermore, the ejector 1300 is detachable. By replacing the ejector 1300 with one having a different shape, the substrate processing apparatus 10B can control the flow rate of gas exhausted for each of the multiple regions.

[0062] Therefore, the gas supplied into the processing vessel 110 from the gas outlet holes of the outlet part 1210A passes between the substrates W supported on the wafer boat 130 and is exhausted to the outside of the processing vessel 110 through the gas suction holes of the suction part 1310. The substrate processing apparatus 10B can improve the uniformity of the flow rate and temperature of the gas supplied by the side flow, thereby improving the uniformity of substrate processing.

[0063] The substrate processing apparatus 10 shown in Fig. 1 has conventionally been realized by, for example, a substrate processing apparatus 10C having a hardware configuration schematically shown in Fig. 5. Fig. 5 is a schematic diagram of an example of the substrate processing apparatus 10C. The substrate processing apparatus 10C in Fig. 5 is illustrated in a simplified manner with respect to the same parts as the substrate processing apparatus 10A shown in Fig. 3 and the substrate processing apparatus 10B shown in Fig. 4.

[0064] 5, the processing vessel 110 is shown divided into an outer tube 110a and an inner tube 110b. In the substrate processing apparatus 10C shown in FIG. 5, the injector 1200 is divided into a top injector 1200a, a center top injector 1200b, a center injector 1200c, a center bottom injector 1200d, and a bottom injector 1200e. Furthermore, in the substrate processing apparatus 10C, an exhaust slit 2000 is disposed on a side surface of the inner tube 110b facing the top injector 1200a, the center top injector 1200b, the center injector 1200c, the center bottom injector 1200d, and the bottom injector 1200e in the inner tube 110b.

[0065] The substrate processing apparatus 10C can adjust the flow rates of gases supplied to and exhausted from the processing vessel 110. That is, the substrate processing apparatus 10C forms multiple regions (zones) in the height direction of the processing vessel 110. A top injector 1200a, a center injector 1200b, a bottom injector 1200c, and an exhaust slit 2000 correspond to each region.

[0066] As shown in FIG. 5, the substrate processing apparatus 10C individually controls the flow rate of gas supplied in the vertical direction of the inner tube 110b using the top injector 1200a, center top injector 1200b, center injector 1200c, center bottom injector 1200d, and bottom injector 1200e, and controls the supplied gas so that it flows over the wafer W toward the exhaust slit 2000.

[0067] Therefore, gases supplied into the processing vessel 110 from the top injector 1200a, the center top injector 1200b, the center injector 1200c, the center bottom injector 1200d, and the bottom injector 1200e pass between the substrates W supported on the wafer boat 130 and are exhausted to the outside of the processing vessel 110 through the exhaust slit 2000. However, in the substrate processing apparatus 10C, the lengths of the injectors 1200 in each zone are different, and therefore the state of the gas in each zone may differ.

[0068] <Summary of the Invention> In this embodiment, an example will be described in which the wafer before processing (an example of a second wafer) is a bare wafer, and the wafer with unknown gas consumption, etc. (an example of a first wafer) is a device wafer. The gas consumption of device wafers varies depending on the surface shape and surface film type, etc., and the film formation results differ from those when films are formed on bare wafers. Furthermore, the gas consumption of device wafers also varies depending on the layout of the device wafers loaded on the wafer boat 130, and the film formation results differ from those when films are formed on bare wafers.

[0069] For example, the gas consumption amount changes and the film formation results differ between a device wafer layout in which the maximum number of device wafers are loaded on the wafer boat 130 (an example of a second layout) and a device wafer layout in which fewer than the maximum number of device wafers are loaded on the wafer boat 130 (an example of a first layout). Hereinafter, loading the maximum number of bare wafers or device wafers on the wafer boat 130 is referred to as a full charge.

[0070] FIG. 6 is a diagram illustrating an example of a problem that arises when predicting the gas flow rate required to form a desired film thickness on a fully charged device wafer in a film formation process in a substrate processing apparatus in which the gas concentration and gas decomposition state in the processing vessel 110 shown in FIG. 5 are not uniform in the inter-surface direction.

[0071] For example, it is assumed that an operator knows in advance the gas flow rate for each vertical region (zone) required to make the bare wafers have a target film thickness (5 nm) when the bare wafers are fully charged into the wafer boat 130, as shown in FIG. 6(A).

[0072] However, as shown in FIG. 6(B), when the wafer boat 130 is fully charged with device wafers, it is difficult to predict the gas flow rate required to make the device wafers have a target film thickness (5 nm) because the gas consumption varies between bare wafers and device wafers depending on the surface shape, surface film type, etc.

[0073] For example, in a substrate processing apparatus in which the gas concentration and gas decomposition state within the processing vessel 110 are not uniform in the inter-surface direction, the combination of the following first to third factors makes it difficult to predict the gas flow rate required to achieve the target film thickness (5 nm) on the device wafers when the wafer boat 130 is fully charged with the device wafers.

[0074] The first factor is that the gas state distribution in the processing vessel 110 is not uniform due to differences in the residence time of the gas in the injector 1200 between zones. The second factor is that the gas consumption rate differs between bare wafers and device wafers. The third factor is that the gas consumption rate differs depending on the layout of the wafers loaded on the wafer boat 130.

[0075] Therefore, in order to predict the gas flow rate required to form the device wafers to the target film thickness (5 nm) when the device wafers are fully charged in the wafer boat 130, it was necessary to fully charge the device wafers, perform the film formation process, and obtain the film formation results.

[0076] FIG. 7 is a diagram illustrating an example of a problem that arises when predicting the gas flow rate required to form a desired film thickness on a fully charged device wafer in a film formation process in a substrate processing apparatus in which the gas concentration and gas decomposition state in the processing vessel 110 are not uniform in the inter-surface direction.

[0077] 7(A), an operator would fully charge device wafers into the wafer boat 130, perform a film formation process, and adjust the gas flow rate for each region (zone) in the height direction so that the film formed would have a target film thickness (5 nm). Therefore, the operator had to repeat the film formation process on the device wafers fully charged into the wafer boat 130 in order to predict the gas flow rate required to achieve the target film thickness (5 nm) on the device wafers fully charged into the wafer boat 130.

[0078] For example, device wafers are often expensive and cannot be consumed in large quantities to predict process conditions. Also, the number of device wafers is small, for example, during the development stage, and therefore, it is not possible to consume a large number of device wafers to predict process conditions.

[0079] Therefore, when predicting the gas flow rate required to achieve the target film thickness (5 nm) on device wafers fully charged in the wafer boat 130, it is desirable to predict the process conditions using as few device wafers as possible.

[0080] 3 and 4, the present embodiment is premised on the use of substrate processing apparatuses 10A and 10B that can make the gas concentration and gas decomposition state uniform in the inter-surface direction within the processing vessel 110. By using substrate processing apparatuses 10A and 10B that can make the gas concentration and gas decomposition state uniform in the inter-surface direction within the processing vessel 110, the first factor described above is resolved.

[0081] Figure 8 is a diagram illustrating an example of predicting the gas flow rate required to form a desired film thickness on a fully charged device wafer in a film formation process in substrate processing apparatuses 10A to 10B in which the gas concentration and gas decomposition state in the processing container 110 are uniform in the inter-surface direction.

[0082] 8A, it is assumed that an operator knows in advance the gas flow rate for each vertical region (zone) required to make the bare wafers have a target film thickness (5 nm) when the bare wafers are fully charged into the wafer boat 130. By using the substrate processing apparatuses 10A to 10B in which the gas concentration and gas decomposition state within the processing vessel 110 are uniform in the inter-surface direction, the gas flow rate is uniform at 1 slm.

[0083] 8(B), the gas flow rates for forming device wafers to a target film thickness (5 nm) are predicted when the device wafers are fully charged in the wafer boat 130. In the present embodiment, by using the substrate processing apparatuses 10A to 10B in which the gas concentration and gas decomposition state in the processing container 110 are uniform in the inter-surface direction, the predicted gas flow rates are uniform in each region (zone).

[0084] The second factor mentioned above can be eliminated by determining the difference in film thickness relative to the gas flow rate between the bare wafer and the device wafer, for example, as shown in Fig. 9. Fig. 9 is an example diagram illustrating the elimination of the wafer dependency of film thickness on the gas flow rate.

[0085] For example, it is assumed that the operator knows in advance that when bare wafers are charged to the wafer boat 130 with only the monitor (fewer bare wafers than a full charge are loaded onto the wafer boat 130) as shown in FIG. 9(A), the gas flow rate required to make the bare wafers have a target film thickness (6 nm) is consistent at "1 slm."

[0086] Furthermore, as shown in FIG. 9(B), the worker charges the wafer boat 130 with only monitor-only device wafers (loading the wafer boat 130 with fewer device wafers than a full charge), and performs a film formation process with the same gas flow rate as in FIG. 9(A), resulting in a film thickness of 4 nm.

[0087] In the case of Figure 9, the operator can calculate that the sensitivity of the film thickness of the device wafer to the gas flow rate is 2 / 3 times that of the bare wafer, based on the film thickness of the bare wafer (6 nm) shown in Figure 9(A) and the film thickness of the device wafer (4 nm) shown in Figure 9(B) when the gas flow rate is 1 slm. Therefore, the operator can determine the dependency of the film thickness of the device wafer on the gas flow rate.

[0088] 10, the third factor mentioned above can be resolved by predicting the gas flow rate required to make the device wafers have a target film thickness (5 nm) when the device wafers are fully charged in the wafer boat 130. Fig. 10 is a diagram illustrating an example of how to resolve the dependency of the film thickness on the gas flow rate on the wafer layout.

[0089] FIG. 10(A) shows that when the wafer boat 130 is fully charged with bare wafers, the gas flow rate required to make the bare wafers have a target film thickness (5 nm) is uniform at 1 slm for each vertical region (zone).

[0090] As explained using Figure 9, the sensitivity of film thickness to the gas flow rate for device wafers is 2 / 3 times that of bare wafers. In the cases of Figures 9 and 10, when the wafer boat 130 is fully charged with device wafers, the operator can calculate the gas flow rate required to make the device wafers have a target film thickness (5 nm) as "1.5 slm," which is 1.5 times the gas flow rate "1 slm" required to make bare wafers have a target film thickness (5 nm).

[0091] 9 is an example in which bare wafers or device wafers are charged to the wafer boat 130 as monitors. The second factor described above may be eliminated by determining the difference in film thickness relative to the gas flow rate for bare wafers and device wafers, as shown in FIG. 11. FIG. 11 is an example diagram illustrating the elimination of the dependency of wafer film thickness on the gas flow rate.

[0092] For example, assume that the operator knows in advance that when only one bare wafer and one monitor are charged onto the wafer boat 130, the gas flow rate required to make the bare wafer have a target film thickness (6 nm) is uniform at "1 slm," as shown in FIG. 11(A).

[0093] In addition, as shown in Figure 11(B), the worker charges only one monitor of device wafers onto the wafer boat 130 and performs a film formation process using the same gas flow rate as in Figure 11(A), resulting in a film thickness of "4 nm."

[0094] In the case of Figure 11, the operator can calculate that the sensitivity of the film thickness of the device wafer to the gas flow rate is 2 / 3 times that of the bare wafer, based on the film thickness of the bare wafer (6 nm) shown in Figure 11(A) and the film thickness of the device wafer (4 nm) shown in Figure 11(B) when the gas flow rate is 1 slm. Therefore, the operator can determine the dependency of the film thickness of the device wafer on the gas flow rate.

[0095] <Functional configuration> The equipment controller 12 of the substrate processing system 1 according to this embodiment is realized by, for example, the functional blocks shown in Fig. 12. Fig. 12 is a functional block diagram of an example of the equipment controller 12 according to this embodiment. Note that the functional block diagram of Fig. 12 omits components that are not necessary for explaining this embodiment. Furthermore, the functional block diagram of Fig. 12 may be realized by the server device 16 or the operator terminal 18.

[0096] 12 executes a program to realize an acquisition unit 30, a calculation unit 32, a prediction unit 34, an output unit 36, and a data storage unit 38. The data storage unit 38 realizes a film formation result storage unit 40 and a model storage unit 42.

[0097] The acquiring unit 30 acquires a film formation result (an example of a first film formation result) obtained by performing film formation processing on a device wafer for which process conditions are to be predicted, for example, in the layout of Fig. 9 or 11 in the processing chamber 110. For example, the acquiring unit 30 may acquire the film formation result obtained by performing film formation processing in the layout of Fig. 9 or 11 by receiving an input of the film formation result obtained by performing film formation processing in the layout of Fig. 9 or 11 from an operator.

[0098] 9 or 11 in the processing chamber 110. The film formation result obtained by performing the film formation process on the bare wafer in the processing chamber 110 in the layout shown in FIG. 9 or 11 may be stored in advance in the film formation result storage unit 40.

[0099] The calculation unit 32 calculates the change in film thickness of the device wafer and the bare wafer (sensitivity of film thickness of the device wafer to the gas flow rate with respect to the bare wafer) based on the film formation result of film formation processing on a device wafer using, for example, the layout of Figure 9 or Figure 11 and the film formation result of film formation processing on a bare wafer using the layout of Figure 9 or Figure 11.

[0100] More specifically, the calculation unit 32 calculates, from the difference in film thickness between the device wafer and the bare wafer, the relationship between the gas flow rate when performing film formation processing on the device wafer and the gas flow rate when performing film formation processing on the bare wafer (the relationship between changes in gas flow rate and changes in film thickness; sensitivity) that is required for the film thicknesses of the device wafer and the bare wafer to be the same.

[0101] 9 or 11 is loaded on the wafer boat 130, and the prediction unit 34 predicts process conditions such as gas flow rates for achieving a desired film thickness when the device wafer is subjected to the film formation process in the second layout, based on the film formation results (an example of a third film formation result) obtained by the film formation process in a specific layout (an example of a second layout) in which a larger number of bare wafers than those in the layouts of, for example, Fig. 9 or 11 are loaded on the wafer boat 130, and the changes in film thickness of the device wafers and bare wafers calculated by the calculation unit 32. A full charge is an example of the second layout.

[0102] More specifically, the prediction unit 34 reflects the relationship calculated by the calculation unit 32 in the third film formation result, thereby predicting the gas flow rate required to achieve the desired film thickness when the device wafer is subjected to film formation processing using the second layout.

[0103] Furthermore, the prediction unit 34 creates a model, such as that shown in FIG. 13, that correlates the gas flow rate and film thickness when the device wafer is subjected to the film formation process using the second layout based on the third film formation result obtained by performing the film formation process on the bare wafer using the second layout in the processing vessel 110 and the calculated changes in film thickness of the device wafer and the bare wafer, and predicts the gas flow rate required to achieve the desired film thickness using the model.

[0104] 13A and 13B are diagrams illustrating an example of a model that associates gas flow rates with film thicknesses resulting from film formation. FIG. 13A shows an example of a model of a substrate processing apparatus in which the gas concentration and gas decomposition state within the processing vessel 110 are not uniform across the surface. FIG. 13A is created from the amount of change in film thickness when the gas flow rate of the injector in each zone is increased by 0.1 slm, based on the film pressure under the BASE condition. The model in FIG. 13A cannot achieve accuracy because the gas state changes between zones due to differences in the length of the injector 1200, and the film formation amount is not consistent between zones.

[0105] 13(B) is an example of a model of the substrate processing apparatus 10A-10B in which the gas concentration and gas decomposition state in the processing vessel 110 are uniform in the inter-surface direction. In the model of FIG. 13(B), the relationship between the gas flow rate and the film thickness resulting from film formation is diagonalized due to side flows. In the model of FIG. 13(B), the gas state does not change between zones and the film formation amount is uniform between zones, so the calculation accuracy is also high. The model of FIG. 13(B) is stored, for example, in the model storage unit 42.

[0106] The output unit 36 ​​outputs process conditions such as gas flow rates for achieving a desired film thickness when the device wafer predicted by the prediction unit 34 is subjected to a film formation process according to the second layout. The process conditions are output by displaying them on the output device 502, for example.

[0107] <Processing> FIG. 14 is a flowchart showing an example of processing performed by the substrate processing system 1 according to this embodiment.

[0108] For example, it is assumed that the film formation results obtained by performing film formation processing on bare wafers in various layouts (including a first layout and a second layout) using the substrate processing apparatuses 10A to 10B in which the gas concentration and gas decomposition state in the processing container 110 are uniform in the inter-surface direction are stored in the film formation result storage unit 40. It is also assumed that the model of the film formation results stored in the film formation result storage unit 40, as shown in FIG.

[0109] In step S10, the acquisition unit 30 acquires the film formation result (an example of the first film formation result) obtained by performing film formation processing on the device wafer for which the process conditions are to be predicted in the processing container 110 using, for example, the layout of FIG. 9 or FIG. 11, and transmits it to the calculation unit 32.

[0110] In step S12, the calculation unit 32 acquires from the film-forming result storage unit 40 a film-forming result (an example of a second film-forming result) obtained by performing film-forming processing on a bare wafer in the processing chamber 110 using the layout of FIG. 9 or FIG.

[0111] In step S14, the calculation unit 32 calculates the change in film thickness between the device wafer and the bare wafer based on the film formation result obtained by performing film formation processing on the device wafer using the layout of, for example, FIG. 9 or FIG. 11 and the film formation result obtained by performing film formation processing on the bare wafer using the layout of FIG. 9 or FIG. 11.

[0112] In step S16, the prediction unit 34 acquires from the film-forming result storage unit 40 a film-forming result (an example of a third film-forming result) obtained by performing film-forming processing on a bare wafer in the processing chamber 110 according to the layout of FIG.

[0113] In step S18, the prediction unit 34 predicts process conditions such as gas flow rate to achieve the desired film thickness when the device wafer is subjected to film formation processing using the second layout, based on the third film formation results and the changes in film thickness of the device wafer and bare wafer calculated by the calculation unit 32.

[0114] In step S20, the output unit 36 ​​outputs process conditions such as gas flow rates for achieving a desired film thickness when the device wafer predicted by the prediction unit 34 is subjected to a film formation process using the second layout.

[0115] According to this embodiment, a technology can be provided for predicting the process conditions for achieving a desired film thickness based on the film formation results of film formation processes on a smaller number of device wafers, thereby making it possible to accurately predict the gas flow rate for achieving a target film thickness on wafers that cannot be consumed in large quantities.

[0116] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and various omissions, substitutions, and modifications may be made to the above-described embodiments without departing from the spirit and scope of the appended claims. [Explanation of symbols]

[0117] 1. Substrate Processing System 10. Substrate processing equipment 12 Equipment Controller 14 Measuring equipment 16 Server equipment 18 Worker terminal 30 Acquisition Department 32 Calculation section 34 Prediction Department 36 Output section 38 Data storage unit

Claims

1. 1. An information processing apparatus for predicting process conditions of a substrate processing apparatus in which a plurality of regions are formed in a processing vessel in a height direction and a gas state can be controlled for each of the regions, an acquisition unit that acquires a first film formation result obtained by performing a film formation process on a first wafer for which the process conditions are to be predicted in the processing chamber according to a first layout; a calculation unit that calculates a change in film thickness of the first wafer and the second wafer based on the first film formation result and a second film formation result obtained by performing film formation processing on an unprocessed second wafer in the processing container according to the first layout; a prediction unit that predicts the process conditions for forming a desired film thickness when forming a film on the first wafer according to the second layout, based on a third film formation result obtained by forming a film on the second wafer in the processing vessel in a number greater than that of the first layout according to the second layout and calculated changes in film thickness of the first wafer and the second wafer; An information processing device having the above.

2. the calculation unit calculates, from a difference in film thickness between the first wafer and the second wafer, a relationship between a flow rate of the gas when performing film formation processing on the first wafer and a flow rate of the gas when performing film formation processing on the second wafer, which is required for the film thicknesses of the first wafer and the second wafer to be the same; The prediction unit predicts the flow rate of the gas required to form a desired film thickness when the first wafer is subjected to a film formation process according to the second layout by reflecting the relationship calculated by the calculation unit in the third film formation result.

2. The information processing device according to claim 1.

3. The prediction unit creates a model that associates the flow rate of the gas when the first wafer is subjected to the film formation processing according to the second layout with the film thickness of the first wafer, based on a third film formation result obtained by performing the film formation processing according to the second layout in the processing vessel in a number greater than that of the first layout, and a calculated change in film thickness of the first wafer and the second wafer, and predicts the flow rate of the gas to achieve a desired film thickness using the model.

3. The information processing device according to claim 2.

4. The first layout is a state in which the processing vessel is accommodated and only one or more monitor wafers are held by a substrate holder. The information processing device according to claim 1 .

5. The substrate processing apparatus includes a gas supply unit that supplies gas from a side surface of the processing chamber along an in-plane direction of the first wafer or the second wafer. The information processing device according to claim 1 .

6. The substrate processing apparatus further includes a gas exhaust unit that exhausts the gas from a side surface of the processing vessel facing the gas supply unit.

6. The information processing device according to claim 5.

7. 1. A process condition prediction method in which an information processing device predicts process conditions of a substrate processing apparatus in which a plurality of regions are formed in a processing vessel in a height direction and a gas state can be controlled for each of the regions, the method comprising: acquiring a first film formation result obtained by performing a film formation process on a first wafer for which the process conditions are to be predicted in the processing chamber according to a first layout; calculating a change in film thickness of the first wafer and the second wafer based on the first film formation result and a second film formation result obtained by performing film formation processing on a second wafer before processing in the processing container according to the first layout; predicting the process conditions for achieving a desired film thickness when the first wafer is subjected to the film formation process according to the second layout, based on a third film formation result obtained by performing film formation process according to the second layout in the processing vessel on a larger number of the second wafers than that of the first layout and the calculated changes in film thickness of the first wafers and the second wafers; A process condition prediction method comprising:

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