Titanium-based material, method for producing titanium-based material, and apparatus for producing the same

Abstract

To provide a titanium-based material and a method for producing a titanium-based material that enable provision of novel applications of titanium-based materials.SOLUTION: The present disclosure provides a method for producing a titanium-based material, the method comprising: a firing step (S2) of firing a base material mainly composed of titanium or a titanium alloy at a temperature of 600°C or more and 700°C or less in the atmosphere to form an oxide film on a surface of the base material; and an etching step (S3) of etching the base material on which the oxide film has been formed after the firing step.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a titanium-based material, a method for producing a titanium-based material, and an apparatus for producing the same. [Background technology]

[0002] Titanium-based materials (materials primarily composed of pure titanium or titanium alloys) are lightweight and possess properties such as high strength and high corrosion resistance, and are therefore used in a wide range of fields, including aircraft equipment, medical equipment, and building materials. For example, Patent Document 1 describes a medical device made of a porous body of pure titanium or a titanium alloy. Furthermore, Patent Document 2 describes a surface-treated metal material, as a coated metal material for home appliances and building materials, in which a coating layer formed by curing an ultraviolet-curable coating composition is provided on the surface of a metal material made of a titanium alloy. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-151805 [Patent Document 2] Japanese Patent Application Laid-Open No. 2018-535326 Summary of the Invention [Problem to be solved by the invention]

[0004] As mentioned above, titanium-based materials have a wide range of properties, and it is expected that new applications will continue to be discovered in the future.

[0005] An object of the present disclosure is to provide a titanium-based material that can provide new uses for titanium-based materials, a method for producing a titanium-based material, and an apparatus for producing the same. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, a firing step of firing a substrate mainly composed of titanium or a titanium alloy in an oxidizing atmosphere at a temperature of 600°C to 700°C to form an oxide film on the surface of the substrate; an etching step of etching the substrate on which the oxide film has been formed after the firing step; have Titanium-based material manufacturing method is provided.

[0007] Preferably, the firing time in the firing step is 0.5 hours or more and 3 hours or less.

[0008] Preferably, the etching step is carried out to remove the oxide film.

[0009] Preferably, the etching solution contains at least one of nitric acid, hydrofluoric acid, and hydrochloric acid.

[0010] Preferably, after the etching step, the substrate contains titanium at an atomic concentration of 80% to 85% and oxygen at an atomic concentration of 15% to 20% in an elemental analysis of the surface of the substrate by EDX.

[0011] According to another aspect of the present disclosure, there is provided a titanium-based material produced by the above-described method for producing a titanium-based material.

[0012] Preferably, the surface roughness Ra of the titanium-based material is 11 μm or more and 20 μm or less, and the surface roughness Rz is 60 μm or more and 120 μm or less.

[0013] Preferably, the 60° gloss of the surface of the titanium-based material is 2 or more and 8 or less.

[0014] According to yet another aspect of the present disclosure, Glass made of the above titanium-based material is provided.

[0015] According to yet another aspect of the present disclosure, A titanium-based material having a surface with a surface roughness Ra of 11 μm or more and 20 μm or less, and a surface roughness Rz of 60 μm or more and 120 μm or less. is provided.

[0016] According to yet another aspect of the present disclosure, there is provided a glass using the titanium-based material.

[0017] According to yet another aspect of the present disclosure, a firing unit that fires a substrate whose main component is titanium or a titanium alloy in an oxidizing atmosphere at a temperature of 600°C to 700°C to form an oxide film on the surface of the substrate; an etching unit that etches the base material baked by the baking unit; Equipped with Titanium-based material manufacturing equipment is provided. [Effects of the Invention]

[0018] According to the above aspects of the present disclosure, it is possible to provide a titanium-based material, a method for manufacturing a titanium-based material, and an apparatus for manufacturing the titanium-based material, which can provide new applications. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 1 is a flow diagram of the method for producing a titanium-based material according to this embodiment. [Figure 2] Figure 2 is an SEM observation photograph (secondary electron image) of a sample in which a base material made of pure titanium was subjected to a sintering process. [Figure 3] FIG. 3 is an SEM observation photograph (secondary electron image) of a sample in which a base material made of pure titanium was subjected to a firing process and an etching process. [Figure 4] FIG. 4 is a graph showing the relationship between the surface roughness (Ra) of the sample and the baking temperature when the etching time in the etching step was 0 hours (no etching step) and 6 hours. [Figure 5]FIG. 5 is a graph showing the relationship between the surface roughness (Rz) of the sample and the baking temperature when the etching time in the etching step was 0 hours (no etching step) and 6 hours. [Figure 6] Figure 6 shows photographs of titanium glass, where (a) is a photograph of the overall appearance, and (b) is a magnified photograph of a portion of the surface of (a). [Figure 7] FIG. 7 is a block diagram of the production apparatus for a titanium-based material according to this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a flow diagram of a method for producing a titanium-based material according to this embodiment. As shown in Fig. 1, the method for producing a titanium-based material according to this embodiment includes a firing step S2 in which a substrate constituting the titanium-based material, i.e., a substrate primarily composed of pure titanium or a titanium alloy, is fired to form an oxide film on the surface of the substrate, and an etching step S3 in which, after the firing step S2, the substrate with the oxide film formed thereon is etched. As a preparatory stage for this production method, this production method preferably includes a substrate preparation step S1 in which the substrate is prepared.

[0021] In the substrate preparation step S1, a substrate primarily composed of pure titanium or a titanium alloy is prepared. Examples of titanium alloys include 64 titanium alloy (JIS (Japanese Industrial Standards) Type 60). There are no particular limitations on the shape of the substrate. Examples of substrate shapes include plate-like, disk-like, column-like, cylindrical, pyramidal, and cup-like shapes. There are also no particular limitations on the thickness of the substrate.

[0022] Next, the firing step S2 is carried out. In the firing step S2, the substrate prepared in the above-mentioned substrate preparation step S1 is fired in the atmosphere, forming an oxide film on the surface of the substrate. For example, a resistance heating electric furnace is used for firing. The firing temperature is preferably 600°C or higher and 700°C or lower. If the firing temperature is lower than 600°C, an oxide film of sufficient thickness cannot be formed. On the other hand, if the firing temperature exceeds 700°C, the oxide film becomes too thick and cannot be properly removed in the etching step S3 described below. The firing temperature is more preferably 630°C or higher and 690°C or lower, even more preferably 640°C or higher and 680°C or lower, and most preferably 650°C or higher and 670°C or lower. Note that firing of the substrate in the firing step S2 is not limited to being carried out in the atmosphere, but can also be carried out in an oxygen-containing gas atmosphere, i.e., an oxidizing atmosphere.

[0023] Furthermore, the firing time is preferably 0.5 hours or more and 3 hours or less. If the firing time is less than 0.5 hours, an oxide film of sufficient thickness cannot be formed. If the firing time is 3 hours, an oxide film of sufficient thickness can be formed. On the other hand, even if the firing time exceeds 3 hours, the thickness of the oxide film does not change significantly, so a firing time of 3 hours is sufficient, but the present disclosure does not exclude firing times of 3 hours or more. The firing time is more preferably 1 hour or more and 3 hours or less, and even more preferably 1 hour or more and 2 hours or less. The firing time is the time during which the above-mentioned firing temperature is maintained.

[0024] For samples of pure titanium substrates subjected to the sintering process S2, surface observation was performed using a scanning electron microscope (SEM) and elemental analysis was performed using energy dispersive X-ray spectroscopy (EDX). Figure 2 shows an SEM photograph (secondary electron image) of a sample of pure titanium substrates subjected to the sintering process S2. A plate-shaped member (length: 100 mm, width: 50 mm, thickness: 3 mm) made of pure titanium was prepared as the substrate. This plate-shaped member had a predetermined smoothness. This plate-shaped member was sintered in an electric furnace. The sintering conditions were a sintering temperature of 630°C and a sintering time of 1 hour. After sintering, the sample was cooled in air. A tabletop microscope TM4000Plus (Hitachi High-Tech Corporation) was used for SEM observation and EDX analysis of the samples. The electron beam accelerating voltage was 15 kV.

[0025] As shown in Figure 2, irregularities 11 are formed on the surface of the substrate. Elemental analysis by EDX detected oxygen at a predetermined concentration or higher on the surface of the substrate. From this result, it is presumed that a layer with a high oxygen concentration, i.e., an oxide film, is formed on the surface of the substrate by the firing step S2, and that the irregularities 11 are formed by the formation of this oxide film.

[0026] Next, the etching step S3 is performed. In the etching step, the substrate on which the oxide film has been formed after the baking step S2 is immersed in an etching solution. The etching conditions, including the etching solution and the time (etching time) for immersing the substrate on which the oxide film has been formed after the baking step S2 in the etching solution, may be determined according to the desired degree of removal of the oxide film formed in the baking step S2. In this embodiment, the etching step S3 is performed to remove the oxide film formed in the baking step S2. In other words, the etching conditions are selected or set so that the oxide film formed in the baking step S2 is removed.

[0027] An acidic etching solution is used as the etching solution. Specifically, the etching solution contains at least one of nitric acid, hydrofluoric acid, and hydrochloric acid. More specifically, Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) is preferably used as the etching solution. For example, the concentration or dilution degree of the etching solution may be adjusted depending on the material, i.e., the substrate. Specifically, either the undiluted solution of Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) or a diluted solution of Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) can be used as the etching solution.

[0028] In this embodiment, the time for immersing the substrate on which the oxide film formed in the firing step S2 is in the etching solution, i.e., the etching time, is set so that the oxide film formed in the firing step S2 is removed. The etching time is set in combination with the etching solution and can be set to, for example, 1 hour or more and 7 hours or less. For example, when a plate-shaped member (length: 100 mm, width: 50 mm, thickness: 3 mm) made of pure titanium is subjected to the firing step S2 in the atmosphere at a firing temperature of 630°C to 700°C, particularly 630°C or 650°C, for a firing time of 1 hour, and then the etching step S3 is performed using an etching solution obtained by diluting Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) by 4 times, the etching time is preferably more than 3 hours and less than 7 hours, more specifically more than 3 hours and less than 6 hours. The titanium-based material according to this embodiment is produced by performing the etching step S3.

[0029] The sample that had undergone the above-described firing step S2 was subjected to the etching step S3, and the surface was observed using an SEM. Figure 3 shows an SEM photograph (secondary electron image) of a sample in which a pure titanium substrate had undergone the firing step S2 and the etching step S3. Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) was used as the etching solution in the etching step S3. Here, the etching solution was prepared by diluting the stock solution four times. The etching time was six hours. The SEM observation was performed using the same equipment as that used to observe the sample after the firing step S2. The electron beam acceleration voltage was 15 kV.

[0030] 3, after the etching step S3 has been performed, a relatively large first recess 13 and a second recess 15 smaller than the first recess 13 are formed on the surface of the substrate. When the lengths of the major and minor axes of one of the first recesses 13 (the area surrounded by the dotted line in FIG. 3) were measured by approximating it to an ellipse, the major axis was 86.3 μm and the minor axis was 44.6 μm.

[0031] The sample after the etching step S3 was subjected to elemental analysis using EDX. In the elemental analysis using EDX, the atomic concentration was calculated limited to titanium and oxygen. As a result of the elemental analysis using EDX, titanium (Ti) with an atomic concentration of 81.9% and oxygen (O) with an atomic concentration of 18.1% were detected. On the other hand, when elemental analysis using EDX was performed on the base material (pure titanium), titanium with an atomic concentration of 84.0% and oxygen with an atomic concentration of 16.0% were detected. As such, it was found that the surface composition of the base material after the etching step S3 was almost the same as the surface composition of pure titanium with a native oxide film. In other words, it was found that the oxide film formed on the surface of the base material in the firing step S2 was largely removed by the etching step S3.

[0032] However, in another experiment, when a sample in which the base material was subjected to only the etching step S3 without being subjected to the firing step S2 was observed by SEM, it was found that the uneven structure of the titanium-based material according to this embodiment (for example, the first recesses 13 and the second recesses 15) as described above was not formed. This shows that in order to form the unique uneven structure of the titanium-based material according to this embodiment, it is necessary to perform the etching step S3 after performing the firing step S2.

[0033] The surface roughness (arithmetic mean roughness Ra and maximum height Rz) of the titanium-based material after the etching step S3 was measured. As in the experiments described above, a plate-shaped member (length: 100 mm, width: 50 mm, thickness: 3 mm) made of pure titanium was prepared as the substrate of the measurement sample. Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) was used as the etching solution. The etching solution was prepared by diluting the stock solution four times. Ra and Rz were measured using a small surface roughness measuring instrument, SURFTEST SJ-210 (Mitutoyo Corporation). Ra and Rz are surface roughness parameters specified in JIS B 0601-2001.

[0034] Table 1 shows the measurement results of Ra and Rz for samples in which the firing temperature in firing step S2 was 500°C, 630°C, 650°C, 670°C, 690°C, 710°C, or 800°C, the firing time was 1 hour, and the etching time in etching step S3 was 0 hour (no etching step S3), 3 hours, or 6 hours. Each value in the table is the average of measurements taken at three locations on the same sample.

[0035] [Table 1]

[0036] Fig. 4 is a graph showing the relationship between the surface roughness Ra and the baking temperature in the baking step S2 of samples in which the etching time in the etching step S3 was 0 or 6 hours, among the measurement results shown in Table 1. Fig. 5 is a graph showing the relationship between the surface roughness Rz and the baking temperature in the baking step S2 of samples in which the etching time in the etching step S3 was 0 or 6 hours, among the measurement results shown in Table 1.

[0037] As shown in Table 1, FIGS. 4 and 5, for samples in which the etching time in the etching step S3 was 0 hours, i.e., samples in which the etching step S3 was not performed, neither Ra nor Rz changed significantly regardless of the firing temperature.

[0038] In contrast, as shown in Table 1 and FIGS. 4 and 5, it can be seen that in the sample that underwent the etching step S3 (for example, the sample with an etching time of 6 hours), both Ra and Rz change depending on the change in the firing temperature. It can be seen that both Ra and Rz become larger than Ra and Rz of the sample that did not undergo the etching step S3 when the firing temperature was 600°C or higher and 700°C or lower. This shows that by performing the firing step S2 at a firing temperature of 600°C or higher and then the etching step S3, the above-mentioned unique uneven structure can be formed on the surface of the substrate.

[0039] Furthermore, both Ra and Rz of the sample subjected to the etching step S3 after the firing step S2 have maximum values ​​when the firing temperature is in the range of 630°C to 700°C. Specifically, when the firing temperature is in the range of 630°C to 700°C or in the range of 630°C to 690°C, Ra is 7 μm to 20 μm and the surface roughness Rz is 40 μm to 120 μm. In particular, in the sample subjected to the firing step S2 and the etching step S3 in a predetermined temperature range including the firing temperature range of 630°C to 650°C, the oxide film formed in the firing step was suitably removed, and the surface roughness Ra was 11 μm to 20 μm and the surface roughness Rz was 60 μm to 120 μm.

[0040] It should be noted that, as can be seen from Table 1, the peak values ​​of Ra and Rz for the sample with an etching time of 3 hours in the etching step S3 are higher than the peak values ​​of Ra and Rz for the sample with an etching time of 6 hours. This is thought to be because the sample with an etching time of 3 hours is affected by the oxide film that is in the process of being peeled off and is present on the surface of the substrate, resulting in higher Ra and Rz. If the etching time exceeds 3 hours and the oxide film continues to peel off, the oxide film will fall off from the surface of the substrate. This is thought to be why the surface condition of the sample with an etching time of 6 hours is more stable than that of the sample with an etching time of 3 hours, resulting in relatively lower Ra and Rz.

[0041] Furthermore, the surface roughness Ra and Rz were measured for the samples of Examples 1 and 2 and Comparative Examples 1 to 3. Table 2 shows the measurement results of Ra and Rz for Examples 1 and 2 and Comparative Examples 1 to 3.

[0042] [Table 2]

[0043] Plate-shaped members (length: 100 mm, width: 50 mm, thickness: 3 mm) made of pure titanium were prepared as the substrates for the samples of Examples 1 and 2 and Comparative Examples 1 to 3. Examples 1 and 2 are samples according to the present embodiment that underwent the firing step S2 and etching step S3, and the firing temperatures shown in Table 1 were 630°C and 650°C, respectively, and the etching time in the etching step S3 was 6 hours. The experimental results in Table 2 are for the case where the etching time in the etching step S3 was set to 6 hours and Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) was used as the etching solution diluted 4 times.

[0044] Comparative Example 1 is a sample in which an oxide film was formed on the surface of a substrate by a sol-gel method and then etched. The sample of Comparative Example 1 was produced by applying a sol solution to the surface of the substrate, firing it in an electric furnace, and then etching it. The sol solution used was a mixture of 20 ml of titanium tetraisopropoxide, 20 ml of 2-propanol, 60 ml of distilled water, and 2 ml of nitric acid. The firing was carried out in the air. The firing temperature was set to 630°C, and the firing time was set to 1 hour. After the fired substrate was slowly cooled, an etching process was carried out using the same etching solution as in Examples 1 and 2. The etching time in the etching process was set to 6 hours.

[0045] Comparative Example 2 is a sample in which an oxide film was formed on the surface of a substrate by anodization, and then an etching treatment was performed. The substrate was used as the anode, and a stainless steel mesh plate was used as the cathode. Phosphoric acid was used as the electrolyte for the anodization, and the voltage was set to 90 V and the treatment time was set to 1 minute. After performing the anodization, the substrate was subjected to an etching treatment using the same etching solution as in Examples 1 and 2. The etching time in the etching treatment was set to 6 hours.

[0046] Comparative Example 3 is a sample in which the surface of the substrate was subjected to a blasting treatment and then an etching treatment. For the blasting treatment, an air blasting (sandblasting) device SFK-2 (manufactured by Fuji Manufacturing Co., Ltd.) was used. Furthermore, Fuji Random A#24 (median particle size: 850-600 μm, material: alumina-silicon carbide (brown fused alumina)) (manufactured by Fuji Manufacturing Co., Ltd.) was used as the abrasive. The blasting treatment was carried out by placing the substrate surface facing the abrasive nozzle at a distance of about 10 cm, and spraying the abrasive for 2 seconds. The amount of air discharged from the nozzle was 0.4 m 3 After the blasting treatment, the substrate was subjected to an etching treatment using the same etching solution as in Examples 1 and 2. The etching time in the etching treatment was set to 6 hours.

[0047] From the results in Table 2, it can be seen that the Ra of Examples 1 and 2 was in the range of 11 μm or more and 20 μm or less, which was larger than the Ra of Comparative Examples 1 to 3, and the Rz of Examples 1 and 2 was in the range of 60 μm or more and 120 μm or less, which was larger than the Rz of Comparative Examples 1 to 3. This shows that in order to increase the surface roughness Ra and Rz, it is effective to perform the firing step S2 and the etching step S3 according to this embodiment.

[0048] The gloss of the titanium-based material according to this embodiment, which had undergone the firing step S2 and etching step S3, was measured. A handheld gloss meter (gloss checker) IG-331 (manufactured by Horiba, Ltd.) was used to measure the gloss. The angle of incident light was set to 60°. As a result of the measurement, the 60° gloss of the surface of the titanium-based material according to this embodiment (gloss when the angle of incident light was 60°) was 2 or more and 8 or less. The 60° gloss of the substrate (pure titanium) that had not undergone the firing step S2 and etching step S3 was 18. This shows that the titanium-based material according to this embodiment has a low surface gloss due to the presence of the first recesses 13 and the second recesses 15.

[0049] Figure 6 shows photographs of a glass made using the titanium-based material prepared as described above, i.e., titanium glass. (a) is a photograph of the overall appearance, and (b) is a photograph of a magnified portion of the surface of (a). Titanium glass was produced by processing a pure titanium substrate into a glass shape, followed by a firing step S2 and an etching step S3. In the firing step S2, the firing temperature was set to 600°C and the firing time was set to 1 hour. In the etching step S3, the etching time was set to 2 hours. Esclean S-22 (Sasaki Pharmaceutical Co., Ltd.) was used as the etching solution. The etching solution used was a four-fold dilution of the original solution. Note that the titanium glass shown in Figure 6 was further fired under specified conditions to develop surface color. As shown in Figures 6(a) and 6(b), the surface of the titanium glass has a unique uneven structure, resulting in a unique texture, color, and feel similar to that of pottery. In addition, because the 60° gloss of the surface is between 2 and 8, it has an appearance that has lost its metallic luster, for example, an appearance similar to that of pottery. Titanium glass with such a feel and appearance has not existed before, and is a novel creation with a high level of design.

[0050] According to the method for producing a titanium-based material according to the present embodiment described above, the firing step S2 and the etching step S3 are carried out to form the first recesses 13 and the second recesses 15 in a substrate made of pure titanium or a titanium alloy. This provides a titanium-based material with a distinctive surface structure.

[0051] Sandblasting, as used in Comparative Example 3 above, is a method for forming recesses, or irregularities, on the surface of a substrate. However, sandblasting applies physical impact to the substrate, which can lead to cracks on the surface of the substrate. In Comparative Example 3, numerous cracks were observed on the surface. Furthermore, the irregularities formed by sandblasting, and thus the corresponding surface roughnesses Ra and Rz, are inferior to the surface roughnesses Ra and Rz obtained by the method for producing a titanium-based material according to this embodiment. In other words, the method for producing a titanium-based material according to this embodiment can create a unique irregular structure on the surface of a substrate without applying physical impacts such as those caused by sandblasting. Therefore, the method for producing a titanium-based material according to this embodiment can provide a titanium-based material that is less susceptible to cracking and has higher strength.

[0052] The titanium-based material according to this embodiment can also be used as a biomaterial in combination with artificial bone. The titanium-based material according to this embodiment has a high surface roughness in the surface layer, with the sample used in the above-mentioned experiment having a surface roughness Ra of 11 μm to 20 μm and a surface roughness Rz of 60 μm to 120 μm, allowing for strong adhesion to other components or growing bone. Furthermore, the titanium-based material is less likely to crack in its base material and has high strength, making it suitable as a biomaterial in this respect as well.

[0053] In particular, the titanium-based material according to this embodiment is fabricated by performing the sintering step S2 and the etching step S3 on a substrate made of pure titanium or a titanium alloy, as described above. In brief, the titanium-based material according to this embodiment is fabricated by forming an oxide film on the surface of the substrate during the sintering step and then largely removing the oxide film during the etching step. Therefore, when the layer with the surface irregularities 13, 15 is designated as the first layer and the layer facing the substrate is designated as the second layer, there is no boundary between the first and second layers, and the first and second layers have a continuous structure. In contrast, when a surface material is sprayed onto the surface of a titanium-based material to form the surface irregularities, an interface exists between the titanium-based material and the surface layer, raising concerns about delamination at that interface. However, the titanium-based material according to this embodiment has no boundary between the first and second layers, and the first and second layers have a continuous structure, eliminating the risk of delamination. This feature will be noteworthy when used as a biomaterial or industrial material.

[0054] Fig. 7 is a block diagram of a titanium-based material manufacturing apparatus according to this embodiment. As shown in Fig. 7, the titanium-based material manufacturing apparatus 2 according to this embodiment includes a firing unit 4. The firing unit 4 is a unit that subjects the base material to the firing step S2 described above, and is, for example, the resistance heating type electric furnace described above.

[0055] 7, the titanium-based material manufacturing apparatus 2 according to this embodiment includes an etching unit 6. The etching unit 6 includes, for example, an etching solution tank that contains the etching solution described above, and a carrier that holds the substrate after the firing step S2. The substrate can be subjected to the etching step S3 by immersing the carrier in the etching solution tank while the carrier holds the substrate.

[0056] The titanium-based material manufacturing apparatus 2 may also include a transfer device that transfers the substrate between the firing unit 4 and the etching unit 6. The transfer device is, for example, a robot arm.

[0057] In addition, the structures, methods, etc. according to the above-described embodiments and modifications may be modified and implemented without departing from the scope of the purpose of this disclosure. [Explanation of symbols]

[0058] 2: Titanium-based material manufacturing equipment 4: Firing unit 6: Etching unit 11: Recess 13: First recess 15: Second recess

Claims

1. a firing step of firing a substrate mainly composed of titanium or a titanium alloy in an oxidizing atmosphere at a temperature of 600°C or higher and 700°C or lower to form an oxide film on the surface of the substrate; an etching step of etching the substrate on which the oxide film has been formed after the firing step; have Manufacturing method for titanium-based materials.

2. 2. The method for producing a titanium-based material according to claim 1, wherein the firing time in the firing step is 0.5 hours or more and 3 hours or less.

3. The method for producing a titanium-based material according to claim 1 , wherein the etching step is carried out so as to remove the oxide film.

4. The method for producing a titanium-based material according to claim 3 , wherein the etching solution contains at least one of nitric acid, hydrofluoric acid, and hydrochloric acid.

5. 2. The method for producing a titanium-based material according to claim 1, wherein the substrate after the etching step contains titanium at an atomic concentration of 80% to 85% and oxygen at an atomic concentration of 15% to 20% in elemental analysis of the surface of the substrate by EDX.

6. A titanium-based material produced by the method for producing a titanium-based material according to claim 1.

7. 7. The titanium-based material according to claim 6, wherein the surface roughness Ra of the titanium-based material is 11 μm or more and 20 μm or less, and the surface roughness Rz of the titanium-based material is 60 μm or more and 120 μm or less.

8. 7. The titanium-based material according to claim 6, wherein the 60° gloss of the surface of the titanium-based material is 2 or more and 8 or less.

9. A glass made using the titanium-based material according to any one of claims 6 to 8.

10. A titanium-based material having a surface with a surface roughness Ra of 11 μm or more and 20 μm or less, and a surface roughness Rz of 60 μm or more and 120 μm or less.

11. A glass made using the titanium-based material according to claim 10.

12. a firing unit that fires a substrate mainly composed of titanium or a titanium alloy in an oxidizing atmosphere at a temperature of 600°C to 700°C to form an oxide film on the surface of the substrate; an etching unit that etches the base material baked by the baking unit; Equipped with Titanium-based material manufacturing equipment.

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