Nickel plated laminate, semiconductor device, apparatus for manufacturing nickel plated laminate, method for manufacturing nickel plated laminate and method for manufacturing semiconductor device

Abstract

To provide a nickel plated laminate capable of easily changing the concentration of phosphorus included in a plurality of nickel layers; a semiconductor device; an apparatus for manufacturing the nickel plated laminate; a method for manufacturing the nickel plated laminate; and a method for manufacturing the semiconductor device.SOLUTION: A method for manufacturing a nickel plated laminate 2 comprises: the step (S1) of preparing a nickel (Ni) plating solution 200 including phosphorus (P) and a sulfur additive and a material 1 to be plated; and the step (S2) of forming the nickel plated laminate 2 on the material 1 to be plated using the nickel plating solution 200. The nickel plated laminate 2 includes nickel layers 20 having different phosphorus concentrations.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a nickel-plated laminate, a semiconductor device, a manufacturing apparatus for a nickel-plated laminate, a manufacturing method for a nickel-plated laminate, and a manufacturing method for a semiconductor device. [Background technology]

[0002] Conventionally, there has been known a method for manufacturing a nickel-plated laminate in which a nickel-plated laminate is formed on a plated material by immersing the material in a nickel plating solution. The nickel-plated laminate is formed from a nickel layer containing phosphorus. By removing the plated material from the nickel plating solution and immersing it in another nickel plating solution with a different phosphorus concentration, additional nickel layers with different phosphorus concentrations can be formed. However, removing the plated material from the nickel plating solution may result in the formation of an oxide film between the nickel layers. In JP 2017-128791 A, two nickel layers with different phosphorus concentrations are formed by changing the conditions (concentration, temperature, etc.) of the nickel plating solution without removing the plated material from the nickel plating solution. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-128791 Summary of the Invention [Problem to be solved by the invention]

[0004] However, with the above-described conventional method, it is difficult to change the phosphorus concentration contained in the multiple nickel layers multiple times, and therefore, the conventional method has room for improvement in terms of changing the phosphorus concentration contained in the multiple nickel layers.

[0005] The present disclosure has been made to solve the above-mentioned problems, and an object of the present disclosure is to provide a nickel-plated laminate, a semiconductor device, a manufacturing apparatus for a nickel-plated laminate, a manufacturing method for a nickel-plated laminate, and a manufacturing method for a semiconductor device, in which the concentration of phosphorus contained in multiple nickel layers can be easily changed. [Means for solving the problem]

[0006] A method for producing a nickel-plated laminate according to the present disclosure includes the steps of preparing a nickel plating solution containing phosphorus and a sulfur additive and a workpiece to be plated, and forming a nickel-plated laminate on the workpiece using the nickel plating solution. The nickel-plated laminate includes nickel layers having different phosphorus concentrations.

[0007] A method for manufacturing a semiconductor device according to the present disclosure uses the above-described method for manufacturing a nickel-plated laminate. The material to be plated includes a semiconductor substrate.

[0008] An apparatus for manufacturing a nickel-plated laminate according to the present disclosure includes a container and at least one of a convection mechanism and a swinging mechanism. The container contains a nickel plating solution. The convection mechanism causes convection in the nickel plating solution. The swinging mechanism swings a workpiece.

[0009] The nickel-plated laminate according to the present disclosure comprises at least three nickel layers, two of which have different phosphorus concentrations and are disposed so as to be in direct contact with each other.

[0010] A semiconductor device according to the present disclosure includes the nickel-plated laminate described above and a connecting member. The nickel-plated laminate has a recess formed therein. The recess connects the nickel-plated laminate to the connecting member. [Effects of the Invention]

[0011] According to the above, it is possible to obtain a nickel-plated laminate, a semiconductor device, a manufacturing apparatus for a nickel-plated laminate, a manufacturing method for a nickel-plated laminate, and a manufacturing method for a semiconductor device, in which the concentration of phosphorus contained in multiple nickel layers can be easily changed. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a schematic cross-sectional view of a nickel-plated laminate according to a first embodiment. [Figure 2] 1 is a schematic diagram of a manufacturing apparatus for a nickel-plated laminate according to the first embodiment. [Figure 3] FIG. 4 is a schematic diagram of a modified example of the manufacturing apparatus for the nickel-plated laminate according to the first embodiment. [Figure 4] 3 is a flowchart of a method for manufacturing a nickel-plated laminate according to the first embodiment. [Figure 5] FIG. 10 is a schematic cross-sectional view of a semiconductor device according to a second embodiment. [Figure 6] FIG. 10 is a schematic cross-sectional view of a nickel-plated laminate according to a third embodiment. [Figure 7] FIG. 10 is a schematic diagram illustrating a shielding effect. [Figure 8] FIG. 10 is a schematic, partially enlarged cross-sectional view of a nickel-plated laminate according to a fourth embodiment. [Figure 9] 10 is a flowchart of a method for producing a nickel-plated laminate according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, embodiments of the present disclosure will be described. Unless otherwise specified, the same or corresponding parts in the following drawings will be denoted by the same reference numerals, and the description thereof will not be repeated.

[0014] Embodiment 1 <Configuration of nickel-plated laminate> Fig. 1 is a schematic cross-sectional view of a nickel (Ni)-plated laminate 2 according to embodiment 1. The nickel-plated laminate 2 shown in Fig. 1 is, for example, a nickel-plated laminate 2 formed on a material 1 to be plated, and includes at least three nickel layers 20.

[0015] The material to be plated 1 may be any member. The material to be plated 1 may be a semiconductor substrate for forming a semiconductor device. The material to be plated 1 may include a semiconductor base material 11 and a wiring layer 12, as described below (see FIG. 5). The nickel-plated laminate 2 may be disposed on the wiring layer 12 (see FIG. 5).

[0016] 1, the nickel-plated laminate 2 is formed by a plurality of nickel layers 20. The nickel-plated laminate 2 may be formed by three or more nickel layers 20, may be formed by five or more nickel layers 20, or may be formed by ten or more nickel layers 20.

[0017] As will be described later, the nickel layer 20 is formed using a nickel (Ni) plating solution containing phosphorus (P). That is, the nickel layer 20 contains phosphorus. Two adjacent nickel layers 20 have different phosphorus concentrations. No oxide film is formed between the multiple nickel layers 20. That is, two adjacent nickel layers are arranged so as to be in direct contact with each other.

[0018] Specifically, the multiple nickel layers 20 include a first layer 21, a second layer 22, and a third layer 23. The first layer 21 is adjacent to the second layer 22. The third layer 23 is adjacent to the second layer 22. The third layer 23 is disposed in a region opposite the region in which the first layer 21 is disposed, as viewed from the second layer 22. In other words, the first layer 21, the second layer 22, and the third layer 23 are stacked in this order.

[0019] No oxide film is formed between the first layer 21 and the second layer 22. In other words, the first layer 21 is in direct contact with the second layer 22. No oxide film is formed between the second layer 22 and the third layer 23. In other words, the second layer 22 is in direct contact with the third layer 23.

[0020] The phosphorus concentration of the first layer 21 is different from the phosphorus concentration of the second layer 22. Furthermore, the phosphorus concentration of the second layer 22 is different from the phosphorus concentration of the third layer 23. The phosphorus concentration of the first layer 21 may be greater or less than the phosphorus concentration of the second layer 22. The phosphorus concentration of the second layer 22 may be greater or less than the phosphorus concentration of the third layer 23. In this way, the phosphorus concentrations of adjacent nickel layers 20 are different from each other.

[0021] The combination of nickel layers 20 to be laminated may be changed depending on the characteristics of the nickel layer 20 depending on the phosphorus concentration. Table 1 shows the physical properties of each of the low-phosphorus layer, medium-phosphorus layer, and high-phosphorus layer. From top to bottom, Table 1 lists the phosphorus concentration, crystalline state, magnetism, salt spray resistance time (unit: Hr), acid resistance, hardness before heat treatment (Vickers hardness), hardness after heat treatment (Vickers hardness), thermal expansion coefficient, electrical resistance, internal stress, wear resistance, and solder wettability. The hardness after heat treatment indicates the hardness after one hour of heat treatment at 400°C. Wear resistance is expressed as an index indicated by the Test Wear Index (TWI). TWI indicates the material's resistance to mechanical action such as friction and abrasion.

[0022] When the concentration of phosphorus contained in the nickel layer 20 is 1 mass percent or more and 4 mass percent or less, the nickel layer 20 is a low-phosphorus layer as described in Table 1. When the concentration of phosphorus contained in the nickel layer 20 is 5 mass percent or more and 8 mass percent or less, the nickel layer 20 is a medium-phosphorus layer as described in Table 1. When the concentration of phosphorus contained in the nickel layer 20 is 9 mass percent or more and 12 mass percent or less, the nickel layer 20 is a high-phosphorus layer as described in Table 1.

[0023] In Table 1, A, B, and C indicate the rating for each item in terms of acid resistance and solder wettability. B indicates that it is better than C. A indicates that it is better than B. In other words, A indicates that it is the best rating among A, B, and C. Additionally, the salt spray resistance time indicates the time it takes to exceed a certain value in the salt spray test. The degree of corrosion is evaluated by both visual observation and mass measurement of the raw materials.

[0024] [Table 1]

[0025] The nickel-plated laminate 2 may be a nickel-plated laminate 2 in which a low-phosphorus layer and a medium-phosphorus layer are laminated in this order. The low-phosphorus layer has relatively poor corrosion resistance, but the medium-phosphorus layer has excellent corrosion resistance. Therefore, by laminating the low-phosphorus layer and the medium-phosphorus layer in this order, the medium-phosphorus layer complements the corrosion resistance of the low-phosphorus layer. Furthermore, the low-phosphorus layer and the medium-phosphorus layer become magnetic when heated.

[0026] The nickel-plated laminate 2 may be a nickel-plated laminate 2 in which a medium phosphorus layer and a high phosphorus layer are laminated in this order. The medium phosphorus layer has relatively poor solder wettability, while the high phosphorus layer has excellent solder wettability. Therefore, by laminating the medium phosphorus layer and the high phosphorus layer in this order, the high phosphorus layer complements the solder wettability of the medium phosphorus layer. Furthermore, the medium phosphorus layer becomes magnetic when heated. However, the high phosphorus layer does not have magnetic properties.

[0027] The thickness of each of the nickel layers 20 may be, for example, 0.1 μm or more and 0.4 μm or less. The average thickness of each of the nickel layers 20 in the nickel-plated laminate 2 may be 0.1 μm or more and 0.5 μm or less. The lower limit of the average thickness may be 0.15 μm or 0.2 μm. The upper limit of the average thickness may be 0.4 μm or 0.3 μm. The average may be, for example, 0.23 μm. The thickness of the nickel-plated laminate 2 (total thickness of the nickel layers 20) may be 0.3 μm or more and 10 μm or less. The lower limit of the thickness may be 1 μm, 2 μm, 3 μm, or 4 μm. The upper limit of the thickness may be 8 μm, 6 μm, or 5 μm. The thickness may be, for example, 4.3 μm. In this way, since the thickness of each of the nickel layers 20 is at the submicron level, the internal stress of the nickel-plated laminate 2 is alleviated.

[0028] In this way, by forming the nickel layers 20 with different phosphorus concentrations, it is possible to obtain a nickel-plated laminate 2 that can provide effects according to the application. In particular, by forming three or more nickel layers 20 with different phosphorus concentrations, it is possible to obtain effects such as improved wear resistance, improved corrosion resistance, improved solder wettability, increased hardness (Vickers hardness), and stress relaxation.

[0029] <Nickel-plated laminate manufacturing equipment> Next, a manufacturing apparatus 100 for the nickel-plated laminate 2 according to the first embodiment will be described. FIG. 2 is a schematic diagram of the manufacturing apparatus 100 for the nickel-plated laminate 2 according to the first embodiment. The nickel-plated laminate 2 is formed using the manufacturing apparatus 100 shown in FIG. 2. The manufacturing apparatus 100 for the nickel-plated laminate 2 includes a container 101, a convection mechanism 102, and a rocking mechanism 103. The manufacturing apparatus 100 may include at least one of the convection mechanism 102 and the rocking mechanism 103, and may include both the convection mechanism 102 and the rocking mechanism 103 as shown in FIG. 2.

[0030] The container 101 contains a nickel (Ni) plating solution 200 and a workpiece 1. The nickel plating solution 200 is, for example, an electroless nickel plating solution, and contains phosphorus (P) and a sulfur additive. The sulfur additive is, for example, thiocyanate hydrochloride.

[0031] A nickel-plated laminate 2 formed by a nickel layer 20 is produced by immersing a workpiece 1 in a nickel plating solution 200. The rate at which the nickel layer 20 is formed varies depending on the amount of sulfur additive contained in the nickel plating solution 200. Furthermore, when the relative flow rate of the nickel plating solution 200 with respect to the workpiece 1 on which the nickel layer 20 is formed changes, the frequency of contact between the surface of the workpiece 1 and the nickel ions in the nickel plating solution 200 changes. As a result, the rate at which nickel is formed on the surface of the workpiece 1 increases. This change in the rate at which the nickel layer 20 is formed changes the phosphorus concentration of the nickel layer 20. For example, when the amount of sulfur additive contained in the nickel plating solution 200 decreases, the phosphorus concentration of the nickel layer 20 increases. Furthermore, when the relative flow rate of the nickel plating solution 200 with respect to the surface of the workpiece 1 increases, the phosphorus concentration of the nickel layer 20 decreases.

[0032] 2 forms a plurality of nickel layers 20 with different phosphorus concentrations by varying the amounts of nickel (Ni) and phosphorus (P) that are brought into contact with the plated material 1 per unit time. In other words, a nickel-plated laminate 2 with a gradient in the phosphorus concentration is produced.

[0033] In order to manufacture the nickel-plated laminate 2 according to the first embodiment, at least one of the convection mechanism 102 and the swinging mechanism 103 is used.

[0034] The convection mechanism 102 causes convection in the nickel plating solution 200. The nickel plating solution 200 may be circulated using the convection mechanism 102 as shown in Figure 2. As a result, the nickel plating solution 200 may convect within the container 101.

[0035] Specifically, as shown in FIG. 2, the convection mechanism 102 has a conduit 102a and a pump 102b. Both ends of the conduit 102a are connected to the container 101. The nickel plating solution 200 flows from the container 101 into the conduit 102a through one end of the conduit 102a as shown by the arrow, and passes through the conduit 102a. The pump 102b is provided midway along the conduit 102a. That is, the pump 102b is provided between one end and the other end of the conduit 102a. The pump 102b pumps out the nickel plating solution 200. After passing through the conduit 102a, the nickel plating solution 200 flows back into the container 101 through the other end of the conduit 102a.

[0036] In this way, the nickel plating solution 200 in the container 101 circulates through the pipe 102a. In other words, by circulating the nickel plating solution 200 using the convection mechanism 102, the flow rate of the nickel plating solution 200 that comes into contact with the workpiece 1 (the amount of nickel plating solution 200 that comes into contact with the workpiece 1 per unit time) may be adjusted.

[0037] The flow rate of the nickel plating solution 200 that comes into contact with the plated material 1 is determined by the circulation flow rate of the nickel plating solution 200 that flows in and out of the container 101. The circulation flow rate may be 30 L / min or more and 60 L / min or less, or 40 L / min or more and 50 L / min or less.

[0038] Increasing the circulation flow rate increases the number of times per unit time that the workpiece 1 comes into contact with the nickel ions contained in the nickel plating solution 200. In other words, increasing the flow rate of the nickel plating solution 200 that comes into contact with the surface of the workpiece 1 forms a nickel layer 20 with a low phosphorus concentration.

[0039] When the nickel layer 20 with a low phosphorus concentration is formed, the amount of sulfur additive contained in the nickel plating solution 200 decreases. Therefore, the nickel plating solution 200 is adjusted so as to form the nickel layer 20 with a high phosphorus concentration. As a result, the nickel layer 20 with a high phosphorus concentration is formed adjacent to the nickel layer 20 with a low phosphorus concentration.

[0040] In this way, by adjusting the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1, it is possible to form a nickel layer 20 having a desired phosphorus concentration.

[0041] As described above, the material 1 to be plated is accommodated in the container 101. The material 1 to be plated is immersed in the nickel plating solution 200 so that it comes into contact with the material 1 to be plated. The material 1 to be plated may be held by a swinging mechanism 103. The swinging mechanism 103 swings, for example, in the vertical direction. As a result, the material 1 to be plated is swung in the vertical direction. The swinging mechanism 103 may also swing, for example, in the horizontal direction. In this way, the flow rate of the nickel plating solution 200 that comes into contact with the material 1 to be plated may be adjusted by swinging the material 1 to be plated.

[0042] When the nickel layer 20 is formed, hydrogen gas is generated on the surface of the workpiece 1. If the formation of the nickel layer 20 proceeds while this hydrogen gas remains on the surface of the workpiece 1, defects called pits or pinholes will occur. To prevent the occurrence of these defects, the rocking mechanism 103 may have a shocking mechanism 104. The shocking mechanism 104 may be, for example, an air cylinder or a rocking cam. As shown in FIG. 2, the shocking mechanism 104 may be disposed on the inner wall surface of the container 101.

[0043] The shocking mechanism 104 applies an impact to the workpiece 1. In this way, hydrogen gas generated on the surface of the workpiece 1 can be removed from the surface of the workpiece 1. The shocking mechanism 104 also increases the convection effect of the nickel plating solution 200.

[0044] The period of the oscillation by the oscillation mechanism 103 may be, for example, 1 second or more and 5 seconds or less. The period of the shock applied to the plated material 1 by the shocking mechanism 104 may be the same as the period of the oscillation by the oscillation mechanism 103.

[0045] In this way, by adjusting the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1 using the swinging mechanism 103, it is possible to form a nickel layer 20 having a desired phosphorus concentration.

[0046] In order to adjust the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1, a convection mechanism 102 may be used, a swinging mechanism 103 may be used, or both the convection mechanism 102 and the swinging mechanism 103 may be used.

[0047] <Modification of the manufacturing apparatus for nickel-plated laminate> Fig. 3 is a schematic diagram of a modified example of the manufacturing apparatus 100 for the nickel-plated laminate 2 according to embodiment 1. Fig. 3 corresponds to Fig. 2. The manufacturing apparatus 100 shown in Fig. 3 basically has the same configuration as the manufacturing apparatus 100 shown in Fig. 2 and can achieve the same effects, but differs in that the nickel plating solution 200 is agitated.

[0048] 3, the convection mechanism 102 has a fan 102c. The rotation of the fan 102c stirs the nickel plating solution 200 in the container 101. The convection mechanism 102 may have a stirrer instead of the fan 102c.

[0049] In this way, the nickel plating solution 200 in the container 101 may be stirred using the convection mechanism 102 having the fan 102c. By stirring the nickel plating solution 200, the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1 may be adjusted.

[0050] The flow rate of the nickel plating solution 200 that comes into contact with the workpiece 1 is determined by the rotation speed of the convection mechanism 102 that agitates the nickel plating solution 200. The rotation speed of the convection mechanism 102 may be 400 rpm or more and 1000 rpm or less, or 600 rpm or more and 800 rpm or less.

[0051] Increasing the rotation speed of the convection mechanism 102 increases the number of times the workpiece 1 comes into contact with the nickel ions contained in the nickel plating solution 200. In other words, increasing the flow rate of the nickel plating solution 200 that comes into contact with the surface of the workpiece 1 results in the formation of a nickel layer 20 with a low phosphorus concentration.

[0052] In this way, by adjusting the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1 using the convection mechanism 102 that agitates the nickel plating solution 200, a nickel layer 20 having the desired phosphorus concentration can be formed.

[0053] <Method of manufacturing nickel-plated laminate> Next, a method for manufacturing the nickel-plated laminate 2 according to the present embodiment 1 will be described. Fig. 4 is a flowchart of the method for manufacturing the nickel-plated laminate 2 according to the present embodiment 1. In the method for manufacturing the nickel-plated laminate 2 according to the present embodiment 1, first, a step (S1) is carried out in which a nickel plating solution 200 containing phosphorus and sulfur additives and a material 1 to be plated are prepared.

[0054] 2 or 3, nickel plating solution 200 is contained in container 101. Nickel plating solution 200 is, for example, an electroless nickel plating solution, and contains phosphorus (P) and sulfur additives.

[0055] Next, a step (S2) is carried out in which a nickel-plated laminate 2 is formed on the material to be plated 1 using a nickel plating solution 200. In this step (S2), the nickel-plated laminate 2 is formed using a manufacturing apparatus 100 shown in FIG. 2 or 3. Specifically, the material to be plated 1 is placed in a container 101. The material to be plated 1 is immersed in the nickel plating solution 200 for a certain period of time. In this manner, the material to be plated 1 is plated.

[0056] When performing plating processing, the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1 is adjusted using at least one or both of a convection mechanism 102 and a swinging mechanism 103, as shown in Figures 2 and 3.

[0057] In this manner, a nickel-plated laminate 2 including nickel layers 20 having different phosphorus concentrations as shown in FIG. 1 is produced.

[0058] Once the composition or other state of the nickel plating solution 200 is changed, it is difficult to return it to its original state. In other words, it takes time to return the state of the nickel plating solution 200 to its original state. For this reason, when a method of changing the state of the nickel plating solution 200 is used, the mass productivity of the nickel-plated laminate 2 is low.

[0059] On the other hand, according to the method for manufacturing the nickel-plated laminate 2 according to the first embodiment, it is possible to form a plurality of nickel layers 20 having different phosphorus concentrations without changing the state of the nickel plating solution 200 (for example, the concentration of phosphorus contained in the nickel plating solution 200 and the temperature of the nickel plating solution 200). In other words, because the state of the nickel plating solution 200 is not changed, it is possible to form a plurality of nickel layers 20 having different phosphorus concentrations with high productivity. As a result, the mass productivity of the nickel-plated laminate 2 according to the first embodiment is improved.

[0060] When a plurality of nickel plating solutions 200 are used, when the object to be plated 1 is removed from the nickel plating solution 200, the surface of the formed nickel layer 20 comes into contact with air, which may result in the formation of an oxide film.

[0061] On the other hand, according to the above-described method for manufacturing the nickel-plated laminate 2, multiple nickel plating solutions 200 with different phosphorus concentrations are not used to form the nickel layers 20 with different phosphorus concentrations. In other words, multiple nickel layers 20 with different phosphorus concentrations are formed using a single nickel plating solution 200, so there is no need to remove the plated material 1 from the nickel plating solution 200 during the process of forming the nickel layer 20. As a result, no oxide film is formed between the nickel layers 20.

[0062] <Action and effect> A method for producing a nickel-plated laminate 2 according to the present disclosure includes a step (S1) of preparing a nickel (Ni) plating solution 200 containing phosphorus (P) and a sulfur additive and a material to be plated 1, and a step (S2) of forming a nickel-plated laminate 2 on the material to be plated 1 using the nickel plating solution 200. The nickel-plated laminate 2 includes nickel layers 20 having different phosphorus concentrations. In the method for producing the nickel-plated laminate 2, the nickel-plated laminate 2 may include three or more nickel layers 20. In the three or more nickel layers 20, the phosphorus concentrations are different between adjacent nickel layers 20. In the step (S2) of forming the nickel-plated laminate 2, multiple (three or more) nickel layers 20 may be formed using the same nickel plating solution 200. In the step (S2) of forming the nickel-plated laminate 2, the concentration of phosphorus in the nickel layer 20 may be changed by changing the contact condition of the nickel plating solution 200 with the plated material 1 (for example, the relative flow rate of the nickel plating solution 200 contacting the surface of the plated material 1, or the flow direction of the nickel plating solution 200 with respect to the surface of the plated material 1).

[0063] In this manner, multiple nickel layers 20 having different phosphorus concentrations can be formed without changing the state of the nickel plating solution 200 (the phosphorus concentration contained in the nickel plating solution 200 and the temperature of the nickel plating solution 200). In other words, since the state of the nickel plating solution 200 is not changed, multiple nickel layers 20 having different phosphorus concentrations can be continuously formed. As a result, the mass productivity of the nickel-plated laminate 2 according to the first embodiment is improved. Furthermore, since multiple nickel layers 20 having different phosphorus concentrations are formed using one nickel plating solution 200, no oxide film is formed between the nickel layers 20. By forming nickel layers 20 having different phosphorus concentrations in this manner, a nickel-plated laminate 2 suitable for various applications can be obtained.

[0064] According to the above-described method for producing the nickel-plated laminate 2, in the step (S2) of forming the nickel-plated laminate 2, the nickel plating solution 200 convects.

[0065] In this way, the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1 is adjusted. In other words, the concentration of phosphorus contained in the nickel layer 20 can be changed by changing the flow rate of the nickel plating solution 200 without changing the state of the nickel plating solution 200. Therefore, multiple nickel layers 20 with different phosphorus concentrations can be easily formed.

[0066] According to the method for producing the nickel-plated laminate 2, in the step (S2) of forming the nickel-plated laminate 2, the material to be plated 1 is oscillated.

[0067] In this way, the flow rate of the nickel plating solution 200 that comes into contact with the plated material 1 is adjusted. In other words, the concentration of phosphorus contained in the nickel layer 20 can be changed by changing the flow rate of the nickel plating solution 200 without changing the state of the nickel plating solution 200. Therefore, multiple nickel layers 20 with different phosphorus concentrations can be easily formed.

[0068] A manufacturing apparatus 100 for a nickel-plated laminate 2 according to the present disclosure includes a container 101 and at least one of a convection mechanism 102 and a swinging mechanism 103. The container 101 contains a nickel plating solution 200. The convection mechanism 102 causes convection in the nickel plating solution 200. The swinging mechanism 103 swings the workpiece 1.

[0069] In this manner, multiple nickel layers 20 having different phosphorus concentrations can be formed without changing the state of the nickel plating solution 200 (the phosphorus concentration contained in the nickel plating solution 200 and the temperature of the nickel plating solution 200). In other words, since the state of the nickel plating solution 200 is not changed, multiple nickel layers 20 having different phosphorus concentrations can be continuously formed. As a result, the mass productivity of the nickel-plated laminate 2 according to the first embodiment is improved. Furthermore, since multiple nickel layers 20 having different phosphorus concentrations are formed using one nickel plating solution 200, no oxide film is formed between the nickel layers 20. By forming nickel layers 20 having different phosphorus concentrations in this manner, a nickel-plated laminate 2 suitable for various applications can be obtained.

[0070] The nickel-plated laminate 2 according to the present disclosure includes at least three or more nickel layers 20. Two nickel layers 20 having different phosphorus concentrations are disposed so as to be in direct contact with each other.

[0071] In this way, by forming nickel layers 20 with different phosphorus concentrations, a nickel-plated laminate 2 suited to the intended use can be obtained.

[0072] Embodiment 2 <Configuration of semiconductor device> Fig. 5 is a schematic cross-sectional view of a semiconductor device 10 according to embodiment 2. Fig. 5 corresponds to Fig. 1. The semiconductor device 10 shown in Fig. 5 is a semiconductor device including the nickel-plated laminate 2 according to embodiment 1 shown in Fig. 1. Specifically, the semiconductor device 10 includes a material to be plated 1, the nickel-plated laminate 2 according to embodiment 1, and a back metal 3. The material to be plated 1 includes a semiconductor substrate 11 and a wiring layer 12.

[0073] The material constituting the semiconductor substrate 11 may be, for example, silicon. A wiring layer 12 is formed on the semiconductor substrate 11. The material constituting the wiring layer 12 may contain aluminum (Al) and silicon (Si). The nickel-plated laminate 2 is disposed on the wiring layer 12. A back metal 3 is formed in a region opposite the region in which the wiring layer 12 is disposed, as viewed from the semiconductor substrate 11. The material constituting the back metal 3 is, for example, a metal such as aluminum. Note that a semiconductor element (not shown) is formed on the semiconductor substrate 11.

[0074] In this way, the nickel-plated laminate 2 may be used as a component of the semiconductor device 10.

[0075] The method for manufacturing the semiconductor device 10 according to the second embodiment uses the method for manufacturing the nickel-plated laminate 2 according to the first embodiment. In the method for manufacturing the semiconductor device 10, first, a step similar to the step (S1) of preparing the nickel plating solution 200 and the material to be plated 1 shown in FIG. 4 is performed. In this step (S1), the material to be plated 1 includes a semiconductor substrate 11 and a wiring layer 12.

[0076] Next, a step similar to step (S2) of forming the nickel-plated laminate 2 shown in Fig. 4 is carried out. In this step (S2), the nickel-plated laminate 2 is formed on the wiring layer 12. After the nickel-plated laminate 2 is formed, the back metal 3 may be formed by any method. The back metal 3 is formed in an area opposite the area where the nickel-plated laminate 2 is disposed, as viewed from the plated material 1. In this way, a semiconductor device 10 as shown in Fig. 5 can be obtained.

[0077] <Action and effect> The method for manufacturing a semiconductor device 10 according to the present disclosure uses a method for manufacturing a nickel-plated laminate 2. The material 1 to be plated includes a semiconductor substrate 11.

[0078] In this way, the nickel-plated laminate 2 may be used as a component of the semiconductor device 10.

[0079] Embodiment 3 <Nickel plating layer composition> Fig. 6 is a schematic cross-sectional view of a nickel-plated laminate 2 according to embodiment 3. Fig. 6 corresponds to Fig. 1. The nickel-plated laminate 2 shown in Fig. 6 basically has the same configuration as the nickel-plated laminate 2 shown in Fig. 1 and can achieve the same effects, but differs in that the plated material 1 includes a base layer 15.

[0080] Specifically, the plated material 1 includes a substrate 14 and an underlayer 15. The substrate 14 is made of a material such as copper (Cu). The substrate 14 has high electrical conductivity. The underlayer 15 is formed on the substrate 14. The underlayer 15 is made of a material such as copper. The underlayer 15 may be formed using an electroless plating method.

[0081] The nickel-plated laminate 2 is disposed on the underlayer 15. The nickel-plated laminate 2 may be a nickel-plated laminate 2 in which a medium-phosphorus layer and a high-phosphorus layer are laminated in this order. The thickness of the nickel-plated laminate 2 is, for example, 0.3 μm or more and 10.0 μm or less.

[0082] As shown in Table 1, the crystalline state of the medium phosphorus layer and the high phosphorus layer is different. The medium phosphorus layer is crystalline and has magnetism. The high phosphorus layer is amorphous and does not have magnetism. When electromagnetic waves are incident on the nickel-plated laminate 2, they flow across the nickel layers 20, which are the multiple medium phosphorus layers. As a result, the nickel-plated laminate 2 achieves a high shielding effect.

[0083] 7 is a schematic diagram illustrating the shielding effect. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 is reflected by the shielding material 4 as a reflected wave 42. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 passes through the inside of the shielding material 4 as an attenuated wave 43. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 is multiply reflected inside the shielding material 4 as a multiple-reflected wave 44. A portion of the electromagnetic wave (incident wave 41) incident on the shielding material 4 passes through the shielding material 4 as a transmitted wave 45.

[0084] The shielding effect of the shielding material 4 is expressed by the amount of reduction in the energy of the electromagnetic wave when an incident wave 41 passes through the shielding material 4 as a transmitted wave 45. The amount of reduction is the sum of the reflection loss lost as a reflected wave 42, the absorption loss lost as an attenuated wave 43 due to absorption by the shielding material 4, and the multiple reflection compensation lost as a multiple reflected wave 44 due to multiple reflections inside the shielding material 4. The unit of each of the reduction amount, reflection loss, absorption loss, and multiple reflection compensation is decibels (dB). A product that provides excellent shielding effect is called an electromagnetic wave shield.

[0085] In this way, the nickel-plated laminate 2 can be used as a shielding material 4. Copper used as the base material 14 is easily oxidized in the atmosphere, which may reduce the shielding effect of the base material 14.

[0086] Therefore, by forming an electroless nickel plating layer or a permalloy plating layer on copper, which has high electrical conductivity, it is possible to prevent oxidation of copper.

[0087] Since the phosphorus concentrations in the multiple nickel layers 20 are different, the electrical conductivities of the nickel layers are different from one another. Therefore, by forming a nickel-plated laminate 2 in which a medium-phosphorus layer and a high-phosphorus layer are sequentially stacked on a substrate 14, the absorption loss, which is lost as an attenuated wave 43 due to absorption by the shielding material 4 shown in FIG. 6, increases. As a result, the attenuation amount indicating the shielding effect increases, improving the shielding effect. In addition, the wear resistance of the nickel-plated laminate 2 is improved.

[0088] In the method for producing the nickel-plated laminate 2 according to the third embodiment, first, a step similar to the step (S1) of preparing the nickel plating solution 200 and the material to be plated 1 shown in Fig. 4 is carried out. In this step (S1), the material to be plated 1 includes a substrate 14 and an underlayer 15. The underlayer 15 may be formed using an electroless plating method.

[0089] Next, a step similar to the step (S2) of forming the nickel-plated laminate 2 shown in Fig. 4 is carried out. In this step (S2), the nickel-plated laminate 2 is formed on the underlayer 15. In this manner, the semiconductor device 10 as shown in Fig. 6 can be obtained.

[0090] <Action and effect> According to the method for producing the nickel-plated laminate 2 , the plated material 1 includes the underlayer 15 .

[0091] In this way, by forming a nickel-plated laminate 2 in which a medium phosphorus layer and a high phosphorus layer are laminated in sequence on top of the base layer 15, a product with improved shielding effect can be obtained.

[0092] Embodiment 4 <Nickel plating layer composition> Fig. 8 is a schematic partially enlarged cross-sectional view of a nickel-plated laminate 2 according to embodiment 4. The nickel-plated laminate 2 shown in Fig. 8 basically has the same configuration as the nickel-plated laminate 2 shown in Fig. 1 and can achieve the same effects, but differs in that a plurality of recesses 2a are provided in a part of the nickel-plated laminate 2.

[0093] Specifically, as shown in Fig. 8, a connection member 5 is in contact with the outer peripheral surface 2s of the nickel-plated laminate 2. The connection member 5 is a member that can be connected to the outer peripheral surface 2s of the nickel-plated laminate 2. The connection member 5 is placed on the material to be plated 1. Fig. 8 shows, for example, a portion of a semiconductor device including the material to be plated 1, the nickel-plated laminate 2, and the connection member 5.

[0094] The material forming the connection member 5 is a material that is easy to mold. The material forming the connection member 5 may be, for example, a resin material such as polyimide, a metal material such as solder, or glass.

[0095] A plurality of recesses 2a are provided on the outer peripheral surface 2s. The recesses 2a are filled with a portion of the connecting member 5. By filling the recesses 2a with the connecting member 5 in this manner, the contact area between the nickel-plated laminate 2 and the connecting member 5 increases. As a result, the adhesion between the nickel-plated laminate 2 and the connecting member 5 improves. In addition, the affinity between the nickel-plated laminate 2 and the connecting member 5 improves.

[0096] <Method of manufacturing nickel-plated laminate> Next, a method for manufacturing the nickel-plated laminate 2 according to the present embodiment 4 will be described. Fig. 9 is a flowchart of the method for manufacturing the nickel-plated laminate 2 according to the present embodiment 4. In the method for manufacturing the nickel-plated laminate 2 according to the present embodiment 4, steps similar to the step (S1) of preparing the nickel plating solution 200 and the material to be plated 1, and the step (S2) of forming the nickel-plated laminate 2 shown in Fig. 4 are carried out in order.

[0097] Next, a step (S3) is carried out in which a plurality of recesses 2a are formed in the nickel-plated laminate 2 using an electrolytic solution containing metal ions whose potential is more noble than nickel (Ni). In this step (S3), a plurality of recesses 2a are formed in the nickel-plated laminate 2 using the electrolytic solution. The electrolytic solution contains metal ions whose potential is more noble than nickel (Ni). Examples of metals whose potential is more noble than nickel include tin (Sn), lead (Pb), copper (Cu), silver (Ag), and gold (Au).

[0098] When the electrolytic solution comes into contact with the nickel-plated laminate 2, a potential difference is generated on the outer peripheral surface 2s of the nickel-plated laminate 2. In other words, the nickel layer 20 in the nickel-plated laminate 2, which has a relatively low phosphorus concentration, is locally corroded. Of the nickel layers 20 exposed on the outer peripheral surface 2s (the side surface located at the outer peripheral end) of the nickel-plated laminate 2, the nickel layers 20 with a low phosphorus concentration are corroded, thereby forming multiple recesses 2a on the outer peripheral surface 2s. Thereafter, the connecting member 5 is formed. Any conventionally known method can be used to manufacture the connecting member 5. In this manner, the device shown in FIG. 8 is obtained.

[0099] In this way, by forming a plurality of recesses 2a on the outer peripheral surface 2s of the nickel-plated laminate 2 that comes into contact with the connection member 5, the adhesion between the nickel-plated laminate 2 and the connection member 5 is improved. In addition, the affinity between the nickel-plated laminate 2 and the connection member 5 is improved.

[0100] <Action and effect> The method for manufacturing the nickel-plated laminate 2 includes, after the step (S2) of forming the nickel-plated laminate 2, a step (S3) of forming a plurality of recesses 2a in the nickel-plated laminate 2 using an electrolyte containing metal ions whose potential is more noble than that of nickel (Ni).

[0101] In this way, a plurality of recesses 2a are formed on the outer peripheral surface 2s of the nickel-plated laminate 2. As a result, the recesses 2a are filled with the connection members 5, thereby increasing the contact area between the nickel-plated laminate 2 and the connection members 5. In other words, the adhesion between the nickel-plated laminate 2 and the connection members 5 is improved. In addition, the affinity between the nickel-plated laminate 2 and the connection members 5 is improved.

[0102] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. Unless there is a contradiction, at least two of the embodiments disclosed herein may be combined. The basic scope of the present disclosure is defined by the claims, not the above description, and is intended to include all modifications within the meaning and scope equivalent to the claims.

[0103] Various aspects of the present disclosure are summarized below as appendices. (Appendix 1) preparing a nickel plating solution containing phosphorus and sulfur additives and a material to be plated; forming a nickel-plated laminate on the workpiece using the nickel plating solution; The nickel-plated laminate includes nickel layers having different phosphorus concentrations. (Appendix 2) In the step of forming the nickel-plated laminate, 2. The method for producing a nickel-plated laminate according to claim 1, wherein the nickel plating solution is subjected to convection. (Appendix 3) In the step of forming the nickel-plated laminate, 3. The method for producing a nickel-plated laminate according to claim 1, wherein the plated material is oscillated. (Appendix 4) 4. The method for producing a nickel-plated laminate according to claim 1, wherein the material to be plated includes a base layer. (Appendix 5) 5. A method for producing a nickel-plated laminate according to any one of claims 1 to 4, further comprising, after the step of forming the nickel-plated laminate, a step of forming a plurality of recesses in the nickel-plated laminate using an electrolytic solution containing metal ions having a more noble potential than nickel. (Appendix 6) A method for manufacturing a semiconductor device using the method for manufacturing a nickel-plated laminate according to any one of Supplementary Note 1 to Supplementary Note 5, The method for manufacturing a semiconductor device, wherein the material to be plated includes a semiconductor substrate. (Appendix 7) a container for containing a nickel plating solution; The nickel-plated laminate manufacturing apparatus includes at least one of a convection mechanism for causing convection of the nickel plating solution and a swinging mechanism for swinging the plated material. (Appendix 8) A nickel-plated laminate comprising at least three nickel layers, The nickel-plated laminate, wherein the two nickel layers having different phosphorus concentrations are arranged so as to be in direct contact with each other. (Appendix 9) 9. The nickel-plated laminate according to claim 8, wherein the nickel-plated laminate is provided with a recess to which a connecting member can be connected. (Appendix 10) The nickel-plated laminate according to claim 8, a connecting member; The nickel-plated laminate has a recessed portion, The nickel-plated laminate and the connecting member are connected by the recess. [Explanation of symbols]

[0104] 1 Plated material, 2 Nickel-plated laminate, 2a Recess, 2s Outer periphery, 3 Back metal, 4 Shielding material, 5 Connection member, 10 Semiconductor device, 11 Semiconductor substrate, 12 Wiring layer, 14 Substrate, 15 Underlayer, 20 Nickel layer, 21 First layer, 22 Second layer, 23 Third layer, 41 Incident wave, 42 Reflected wave, 43 Attenuated wave, 44 Multiple reflected wave, 45 Transmitted wave, 100 Manufacturing equipment, 101 Container, 102 Convection mechanism, 102a Pipe, 102b Pump, 102c Fan, 103 Swing mechanism, 104 Shocking mechanism, 200 Plating solution.

Claims

1. preparing a nickel plating solution containing phosphorus and sulfur additives and a material to be plated; forming a nickel-plated laminate on the workpiece using the nickel plating solution; The nickel-plated laminate includes nickel layers having different phosphorus concentrations.

2. In the step of forming the nickel-plated laminate, The method for producing a nickel-plated laminate according to claim 1 , wherein the nickel plating solution undergoes convection.

3. In the step of forming the nickel-plated laminate, The method for producing a nickel-plated laminate according to claim 1 , wherein the plated material is oscillated.

4. The method for producing a nickel-plated laminate according to claim 1 , wherein the material to be plated includes an underlayer.

5. 2. The method for producing a nickel-plated laminate according to claim 1, further comprising, after the step of forming the nickel-plated laminate, a step of forming a plurality of recesses in the nickel-plated laminate using an electrolytic solution containing metal ions having a potential more noble than nickel.

6. A method for manufacturing a semiconductor device using the method for manufacturing a nickel-plated laminate according to any one of claims 1 to 5, The method for manufacturing a semiconductor device, wherein the material to be plated includes a semiconductor substrate.

7. a container for containing a nickel plating solution; The nickel-plated laminate manufacturing apparatus includes at least one of a convection mechanism for causing convection of the nickel plating solution and a swinging mechanism for swinging the plated material.

8. A nickel-plated laminate comprising at least three nickel layers, The nickel-plated laminate, wherein the two nickel layers having different phosphorus concentrations are arranged so as to be in direct contact with each other.

9. The nickel-plated laminate according to claim 8; a connecting member; The nickel-plated laminate has a recessed portion, The nickel-plated laminate and the connecting member are connected by the recess.

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