Input and output device

Abstract

To provide a new input and output device which is excellent in convenience or reliability.SOLUTION: An input and output device according to the present invention has a first sensor electrode and a second sensor electrode. The device further has a first electrode and a second electrode both of which are electrodes of a display device. The device has a substrate deposed between the first sensor electrode and the second sensor electrode. The second sensor electrode is formed of the same material as that of the first electrode and simultaneously with the first electrode. The input and output device detects change in capacity generated between the first sensor electrode and the second sensor electrode. A third sensor electrode given a stray potential may be provided so as to be overlapped with the first electrode. The input and output device may be used so as to be overlapped with either or both of a liquid crystal device and a light emitting device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an input / output panel, an input / output device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the invention disclosed herein more specifically relates to The technical field of one embodiment of the present invention is a semiconductor device, an input / output device, a light-emitting device, a power storage device, a memory device, and the like. , their driving methods, or their manufacturing methods can be cited as examples. [Background technology]

[0003] The common electrode for display originally provided in the liquid crystal display element is replaced with a pair of electrodes for the touch sensor. One of the electrodes (drive electrode) is used as the other electrode (detection electrode for the sensor) and is newly formed. In addition, the existing common drive signal as a display drive signal is used as a touch sensor drive signal. A configuration in which the same device is shared by other devices is known (Patent Document 1).

[0004] Touch signal lines such as drive and sense lines and ground regions in the display pixel stackup and other circuit elements are grouped together to form a touch sensitive display on or near the display. A configuration for forming a switch sensing circuit is known (Patent Document 2). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-244958 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-197685 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one aspect of the present invention is to provide a novel input / output panel that is highly convenient and reliable. Another object of the present invention is to provide a novel input / output device that is highly convenient and reliable. Alternatively, a new input / output panel, a new input / output device, or a new semiconductor device One of the objectives is to provide a facility for

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0008] The input / output device according to one embodiment of the present invention includes a first sensor electrode, a second sensor electrode, and a liquid crystal material. The liquid crystal display device includes a layer containing a liquid crystal material, a substrate, a first electrode, a second electrode, and a detection circuit. The layer including the first sensor electrode has an area overlapping the first sensor electrode, and the substrate has a first sensor electrode and a liquid crystal material. The second sensor electrode has a region sandwiched between a layer containing a liquid crystal material and a substrate. The second sensor electrode has a region sandwiching a layer containing the second sensor electrode. The second sensor electrode forms a capacitance with the first sensor electrode. The first electrode has a region where a layer containing a liquid crystal material is sandwiched between the first electrode and the substrate, and the second electrode is arranged so as to sandwich the layer containing a liquid crystal material between the first electrode and the substrate. The first electrode includes the same material as the second sensor electrode, and the layer including the liquid crystal material includes the liquid crystal material. The second electrode is arranged so that an electric field for controlling the alignment of the liquid crystal material can be applied between the second electrode and the first electrode. The sensing circuit is capable of detecting a change in capacitance.

[0009] The input / output device of one embodiment of the present invention includes a first sensor electrode, a second sensor electrode, and a light-emitting material. The device has a layer including a material, a substrate, a first electrode, a second electrode, and a detection circuit. A region where a first sensor electrode is formed on one side of the substrate and a second electrode is formed on another side of the substrate. a region where the first electrode is sandwiched between the second electrode and the substrate; A region is provided between the electrode and the first electrode, in which a layer containing a light-emitting material is sandwiched. The first electrode comprises the same material as the second sensor electrode, and the second sensor electrode comprises a material different from that of the first sensor electrode. The electrode is disposed so as to form a capacitance between the electrode and the sensor circuit, and the sensor circuit is capable of detecting a change in the capacitance. It is possible.

[0010] The first sensor electrode is disposed with the substrate between the first sensor electrode and the display element. In this specification, the second sensor electrode is also simply referred to as the second sensor electrode. The in-cell sensor is disposed so as not to have a substrate between the display element and the in-cell sensor. Also called an electrode.

[0011] In this configuration, the in-cell sensor electrode is connected to the display element in the input / output panel. The wiring is not electrically connected to the pixel. Highly reliable or easy-to-operate input that is not related to the decrease in sensitivity of the touch sensor An output device can be created.

[0012] In each of the above configurations, it is preferable that the third sensor electrode is disposed on the same surface as the sensor electrode. In each configuration, the third sensor electrode is arranged to overlap the in-cell sensor electrode. In each of the configurations, a floating potential is applied to the third sensor electrode. It is preferable that the third sensor electrode is also referred to as a secondary sensor electrode in this specification.

[0013] In each of the above structures, both the layer containing the light-emitting material and the layer containing the liquid crystal material may be formed separately. It is preferable that they are arranged so as to overlap each other.

[0014] In each of the above configurations, a backlight is provided, and the first electrode and the second electrode are The reflectance is 5% or more but less than 100% for light with a wavelength of 400 nm or more but less than 800 nm. and the transmittance is 1% or more and less than 95%, and the backlight is a layer containing a liquid crystal material. It is preferable that the light can be irradiated onto the surface of the object.

[0015] A semiconductor device according to another embodiment of the present invention is a device for a keyboard, a hardware button, a pointing device, a Devices, touch sensors, illuminance sensors, imaging devices, voice input devices, viewpoint input devices, posture detection and one or more of the above-mentioned input / output devices.

[0016] In this specification, the source and drain of a transistor are used to indicate the polarity and The name changes depending on the level of the potential applied to the terminal. Generally, n-channel In a transistor with a low potential, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the The terminal to which the transistor is connected is called the drain. The terminal to which a high potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. For convenience, let us assume that the source and drain are fixed. However, in reality, the source and drain are connected according to the above potential relationship. The way they are handled changes.

[0017] In this specification, the source of a transistor refers to a source region that is a part of a semiconductor film, or The source electrode connected to the semiconductor film is called the drain electrode of a transistor. a drain region that is a part of the semiconductor film, or a drain electrode that is connected to the semiconductor film; The term "gate" refers to a gate electrode.

[0018] In this specification, the state in which transistors are connected in series means, for example, Only one of the source or drain of one transistor is connected to the source or drain of the second transistor. It also means that the transistors are connected in parallel. The state where either the source or drain of the first transistor is connected to the second transistor and the source or drain of the first transistor is connected to one of the source and drain of the second transistor. The other of the two transistors is connected to the other of the source or drain of the second transistor. do.

[0019] In this specification, connection means an electrical connection, and a current, voltage, or potential is supplied. Therefore, the connected state corresponds to the state where the signal can be supplied or transmitted. does not necessarily refer to the state in which a current, voltage, or potential is available or transferable. The signals are transmitted through circuit elements such as wires, resistors, diodes, and transistors. This also includes the state of being directly connected.

[0020] In this specification, when components that are independent on the circuit diagram are connected to each other, However, in reality, for example, when a part of the wiring functions as an electrode, one conductive film may be connected to multiple In this specification, the term "connection" refers to such a Cases in which one conductive film has the functions of multiple components are also included in this category.

[0021] In this specification, either the first electrode or the second electrode of a transistor is a source the other refers to the drain electrode. [Effects of the Invention]

[0022] According to one aspect of the present invention, it is possible to provide a novel input / output panel that is highly convenient and reliable. Alternatively, a novel input / output device with excellent convenience and reliability can be provided. An input / output panel, a novel input / output device, or a novel semiconductor device can be provided.

[0023] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0024] [Figure 1] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 2] 1A and 1B are a schematic diagram showing the configuration of a mutual capacitance touch sensor according to an embodiment, a schematic diagram of input / output waveforms, and a configuration example of a touch sensor having a plurality of capacitors arranged in a matrix. [Figure 3] 1A to 1C illustrate electronic devices including an input / output panel according to an embodiment. [Figure 4] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 5] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 6] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 7] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 8] 1A and 1B are cross-sectional views illustrating a structure of a pixel that can be used for an input / output device according to an embodiment. [Figure 9] FIG. 1 is a block diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 10] 1A to 1C illustrate a configuration of an input / output panel that can be used for an input / output device according to an embodiment. [Figure 11] 1A to 1C illustrate a configuration of an input / output panel that can be used for an input / output device according to an embodiment. [Figure 12] 1A and 1B are cross-sectional views illustrating a structure of an input / output panel that can be used for the input / output device according to an embodiment. [Figure 13] 1A and 1B are cross-sectional views illustrating a structure of an input / output panel that can be used for the input / output device according to an embodiment. [Figure 14] FIG. 10 is a bottom view illustrating a part of a pixel of an input / output panel that can be used for the input / output device according to the embodiment. [Figure 15] FIG. 1 is a circuit diagram illustrating a configuration of a pixel circuit included in an input / output panel that can be used for the input / output device according to an embodiment. [Figure 16] 1A to 1C are schematic diagrams illustrating the shape of a reflective film that can be used for a pixel of an input / output panel that can be used for the input / output device according to an embodiment. [Figure 17] FIG. 1 is a block diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 18]1A to 1C illustrate a configuration of an input / output panel that can be used for an input / output device according to an embodiment. [Figure 19] 1A to 1C illustrate a configuration of an input / output panel that can be used for an input / output device according to an embodiment. [Figure 20] 1A to 1C illustrate a configuration of an input / output panel that can be used for an input / output device according to an embodiment. [Figure 21] 1A to 1C illustrate a structure of a transistor that can be used for an input / output device according to an embodiment. [Figure 22] 1A to 1C illustrate electronic devices including input / output devices according to embodiments of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0025] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various forms and details without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. It should not be construed as being limited to the contents of the description of the state.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0027] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area is not clearly indicated. The figures may be exaggerated for clarity and are not necessarily limited to that scale. .

[0028] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limit.

[0029] In this specification, metal oxide is a broad term referring to metal oxides. Metal oxides are oxides. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called "OS"), For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, metal oxides have amplifying, rectifying, and and switching action, the metal oxide is called a metal oxide semiconductor. Conductor (metal oxide semiconductor), abbreviated as OS In addition, when describing OSFET, it is possible to use a metal oxide or oxide semiconductor. In other words, it is a transistor having a body.

[0030] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). It may also be called hydroxybenzoxanthate (hydroxybenzoxanthate).

[0031] In this specification, CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. Represents.

[0032] In this specification and the like, CAC-OS or CAC-metal oxide means A part of the material has a conductive function, and a part of the material has an insulating function, and the whole material It functions as a semiconductor. When e is used in the active layer of a transistor, the conductive function is to transfer electrons (or The insulating function is the function of not allowing the flow of electrons, which are carriers. By making the conductive function and insulating function work in a complementary manner, The function to turn the sync on / off can be set to CAC-OS or CAC-metal. CAC-OS or CAC-metal oxide By separating the functions in e, it is possible to maximize the functionality of both. Cut.

[0033] In this specification and the like, CAC-OS or CAC-metal oxide is a The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. The region has the insulating function described above. In addition, the material has a conductive region and an insulating region. The regions may be separated at the nanoparticle level. The conductive regions may be unevenly distributed in the material. They may be observed connected in a similar manner.

[0034] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0035] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is used for the channel region of the transistor. When the transistor is turned on, the transistor has a high current driving capability, i.e., a large on-state current. High field effect mobility can be obtained.

[0036] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0037] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents of the description. The same reference numerals are used in different drawings to denote the same parts or parts having similar functions. A repeated explanation will be omitted.

[0038] (Embodiment 1) In this embodiment mode, an input / output panel that can be used for an input / output device will be described. In particular, a sensor capable of detecting the proximity or contact of a detection object that can be applied to the input / output panel. A configuration example of the sensor (hereinafter referred to as the touch sensor) will be described.

[0039] The touch sensor of one embodiment of the present invention uses a capacitive touch sensor. Typical examples of such methods include surface capacitive touch panels and projected capacitive touch panels. There are two types of capacitance sensors, self-capacitance and mutual capacitance, which differ mainly in their driving methods. Here, if the mutual capacitance method is used, it is possible to detect multiple points simultaneously (multipoint detection). This is preferable because it allows for touch (also called touch).

[0040] [Layout of electrodes used in touch sensors] A touch sensor according to one embodiment of the present invention has two or three electrodes. The capacitance is formed between three electrodes. The following description will be given using the rules 3551 and 3552 as an example (see FIGS. 1(A) and 1(B)).

[0041] FIG. 1(A) shows a schematic cross-sectional view of a part of a pixel of an input / output panel 3551. FIG. 1(B) shows A cross-sectional schematic diagram of a portion of a pixel of an input / output panel 3552 is shown. The panels 3552 are FFS (Fringe Field Solder) panels each having a layer containing a liquid crystal material. The liquid crystal element has a switching mode.

[0042] Both the input / output panel 3551 and the input / output panel 3552 are made up of a transistor 3521 and a A pole 3522, an electrode 3523, a layer containing a liquid crystal material 3524, and a color filter 3525. The layer 3524 containing a liquid crystal material is disposed between the alignment film 3561 and the alignment film 3562. The electrode 3523 is connected to either the source or drain of the transistor 3521. The electrodes 3523 and 3522 are electrically connected to each other. An insulating layer is sandwiched between the electrodes 3523 and 3522. The electrode 523 and the electrode 3522 each function as one electrode of the liquid crystal element, and a voltage is applied between them. By applying pressure, the orientation of the liquid crystal can be controlled.

[0043] Electrode 3523A and electrode 3523B shown in FIG. 1(A) are both parts of electrode 3523. The electrode 3523 has a comb-like shape. It can also be applied to input / output panels that have liquid crystal elements to which the FFS mode is applied. .

[0044] The input / output panel 3551 and the input / output panel 3552 are both made up of a first substrate 3541 and a second substrate 3542. The liquid crystal display device has a first substrate 3541 and a second substrate 3543. ... liquid crystal material between the first substrate 3541 and the second substrate 3543. The layer 3524 includes a sensor electrode 3527 and a layer 3524 including a liquid crystal material. The sensor electrode 3527 is disposed so that the second substrate 3543 is positioned thereon.

[0045] The touch sensor of the input / output panel 3551 has a sensor electrode 3527 and an in-cell sensor electrode. Capacitive detection is achieved by detecting the change in capacitance between the electrode 3529 and the electrode 3529 as a pair of electrodes. The input / output panel 3551 is connected to the sensor electrode 3527 and the in-cell sensor electrode 3529. The in-cell sensor electrode 3529 has a second substrate 3543 between it and the in-cell sensor electrode 3529. is formed at the same time as the electrode 3523 and from the same material.

[0046] On the other hand, the touch sensor of the input / output panel 3552 is at a floating potential (floating potential). The secondary sensor electrode 3528 is provided with a floating potential. The electrode 3528 has an area that overlaps with the in-cell sensor electrode 3529 in the thickness direction of the substrate. The change in capacitance formed between the sensor electrode 3527 and the sub-sensor electrode 3528 is detected. This allows for capacitance detection.

[0047] Although not shown in FIG. 1(A) or FIG. 1(B), a touch panel according to one embodiment of the present invention may be used. The sensor has a sensing circuit. The sensing circuit is electrically connected to the sensor electrode 3527. A transmission circuit is electrically connected to the cancel sensor electrode 3529, and the potential changes over time. The change in the potential of the sensor electrode 3527 is caused by the change in the potential of the sensor electrode 3527 and the in-cell sensor electrode 3527. The difference is due to the change in capacitance formed between the sub-sensor electrode 3528 and the sensor electrode 529. When the sensor electrode 3527 is connected to the sub-sensor electrode 3527, the change in the potential of the sensor electrode 3527 is The change in capacitance between the sensor and the touch sensor 28 is different. , varying these capacitances.

[0048] The detection circuit detects the change in the capacitance by detecting the change in the potential of the sensor electrode 3527. do.

[0049] Like the input / output panel 3552, a sub-sensor electrode 3528 to which a floating potential is applied is provided. As a result, the electric lines of force formed between the sensor electrode 3527 and the sub-sensor electrode 3528 are The more electric lines of force between the electrodes, the more the object to be detected crosses. The capacitance formed between the electrodes becomes smaller as the sensor electrode 3551 is increased. When the object to be detected crosses the electric field lines formed between the in-cell sensor electrode 3527 and the in-cell sensor electrode 3529, However, the object to be sensed crosses more electric lines of force in the input / output panel 3552. That is, the input / output panel 3552 has a higher sensitivity of the touch sensor than the input / output panel 3551. It can be made easier.

[0050] In addition, a sub-sensor electrode 3528 to which a floating potential is applied is provided on the second substrate 3543. This may reduce the effect of static electricity when the touch sensor is exposed to static electricity.

[0051] Alternatively, by providing a sub-sensor electrode 3528 to which a floating potential is applied, the input / output panel The pattern on the screen becomes uniform, making the linear pattern less visible. This improves the display quality. You will get an output panel.

[0052] [Example of sensor detection method] Figure 2 (A) and (B) show a schematic diagram of the mutual capacitance type touch sensor and the input / output waveforms. The touch sensor has a pair of electrodes, and a capacitance is formed between the electrodes. An input voltage is applied to one of the pair of electrodes. A current flows through the other electrode. It is equipped with a detection circuit that detects the potential of the electrode (or the potential of the other electrode).

[0053] For example, as shown in Figure 2(A), when a square wave is used as the input voltage waveform, the output current wave Waveforms that have sharp peaks in shape are detected.

[0054] Also, as shown in Figure 2(B), when a conductive object to be detected comes close to or touches the capacitance, The capacitance value between the electrodes decreases, and the output current value decreases in accordance with the decrease in the capacitance value.

[0055] In this way, the change in capacitance is detected using the change in output current (or potential) relative to the input voltage. By emitting a signal, it is possible to detect the proximity or contact of an object to be detected.

[0056] [Touch sensor configuration example] FIG. 2C shows an example of the configuration of a touch sensor having a plurality of capacitors arranged in a matrix. vinegar.

[0057] The touch sensor includes a plurality of wirings 3510 extending in the X direction (horizontal direction on the paper surface) and a plurality of wirings 3510. The wiring has a plurality of wirings 3511 that intersect with the wiring and extend in the Y direction (the vertical direction on the paper). A capacitance is formed between the two wires.

[0058] In addition, the wiring extending in the X direction is connected to the input voltage or common potential (including the ground potential and reference potential). ) is input to the wiring extending in the Y direction. Source meters, sense amplifiers, etc.) are electrically connected, and the current (or It is possible to detect the potential.

[0059] The touch sensor is designed so that the input voltage is input in order to multiple wires extending in the X direction. By scanning the wires and detecting changes in the current (or potential) flowing through the wires extending in the Y direction, This enables two-dimensional sensing of the object.

[0060] [Example of input / output panel configuration] Below, we will explain a configuration example of an input / output panel that includes a display unit having a plurality of pixels and a touch sensor, An example of incorporating the input / output panel into an electronic device will be described.

[0061] FIG. 3A is a schematic cross-sectional view of an electronic device equipped with an input / output panel.

[0062] The electronic device 3530 includes a housing 3531 and at least an input / output panel 35 inside the housing 3531. 32, a battery 3533, and a control unit 3534. The input / output panel 3532 also includes a control unit 3534 and the display unit via wiring 3535. The image display and the touch sensor sensing operation are controlled. It is electrically connected to the control unit 3534 via wiring 3536 and supplies power to the control unit 3534. It is possible.

[0063] The input / output panel 3532 is provided so that its display surface is exposed. 2. An image is displayed on the exposed surface of the sensor, and an object to be detected is detected when the object is in contact with or in proximity to the sensor. can.

[0064] The input / output panel 3532 shown in FIG. 3B is made up of a protection substrate 3546 and a second substrate 3543. A protective substrate 3546 is provided with the electrode 3522 disposed therebetween. 6 and the sensor electrode 3527 may be in contact with each other or may be fixed to each other with an adhesive. good.

[0065] Since the object to be detected comes into contact with or is close to one surface of the protective substrate 3546, at least that surface For example, it is preferable that the mechanical strength of the material is increased by an ion exchange method or an air cooling method. The glass is made of tempered glass that has been subjected to a physical or chemical treatment to apply compressive stress to its surface. It can be used as a protective substrate 3546. Alternatively, it can be used as a surface-coated plastic. A flexible substrate such as a protective film or an optical film may be used on the protective substrate 3546. A film may be provided.

[0066] In the input / output panel 3551 shown in FIG. 1(A) and the input / output panel 3552 shown in FIG. 1(B), In this case, the in-cell sensor electrode 3529 is electrically connected to the wiring 3510, and the sensor electrode 3 527 is connected to the wiring 3511. The in-cell sensor electrode 3529 is connected to the wiring 3511. 511, and the sensor electrode 3527 may be connected to the wiring 3510. The same relationship applies to the other embodiments described below.

[0067] The input / output panel of one embodiment of the present invention includes wiring for writing an image and a sensor for a touch sensor. The wiring that performs the sensing is not electrically connected. There is no need to provide a separate period for sensing by the touch sensor and a period for sensing by the touch sensor. Therefore, noise during pixel writing is unrelated to the decrease in sensitivity of the touch sensor. Therefore, an input / output device with high performance or good operability can be manufactured.

[0068] (Embodiment 2) In this embodiment, an input / output panel that can be used as the input / output panel of one embodiment of the present invention will be described. Here, we will explain examples of pixel configurations that are different from 3551. In each case, the capacitance is a pair of electrodes. Capacitive detection is performed by detecting changes in

[0069] Figure 4(A) shows the liquid crystal display to which the IPS (In-Plane-Switching) mode is applied. 3 is a cross-sectional schematic diagram showing a portion of a pixel of an input / output panel 3553 having a liquid crystal element.

[0070] The pixel includes a transistor 3521, an electrode 3522, an electrode 3523, and a layer containing a liquid crystal material. The layer 3524 containing the liquid crystal material has an alignment layer 3525. The electrode 3523 is sealed between the film 3561 and the alignment film 3562. The electrode 3522 is electrically connected to either the source or drain of the transistor 21. The electrode 3523 and the electrode 3522 are connected to a wiring that is connected to a part of the liquid crystal element. The liquid crystal orientation is controlled by applying a voltage between them. It is possible.

[0071] The electrode 3523 and the electrode 3522 provided in the pixel both have a comb-like shape. The two are provided on the same plane so as to fit together and be separated from each other.

[0072] The input / output panel 3553 is a pair of the sensor electrode 3527 and the in-cell sensor electrode 3529. The capacitance is detected by detecting the change in capacitance. The sensor electrode 3529 is formed of the same material as the electrode 3523 at the same time. Electrically connecting the sensor electrode 3529 to the wiring 3510 or wiring 3511 described above This makes it possible to configure the pixels of the input / output panel described above.

[0073] Figure 4(B) shows the input and output when VA (Vertical Alignment) mode is applied. 3 is a cross-sectional schematic diagram showing a portion of a pixel of the input panel 3554.

[0074] The electrode 3522 and the electrode 3523 sandwich a layer 3524 containing a liquid crystal material. The wiring 3526 is provided so as to overlap with the wiring 22. For example, the wiring 3526 is It can be provided to electrically connect blocks different from the block to which the pixel belongs. In addition, a layer containing a liquid crystal material is provided between the sensor electrode 3527 and the in-cell sensor electrode 3529. 3524. Here, the in-cell sensor electrode 3529 is made of the same material as the electrode 3523. are formed simultaneously.

[0075] The input / output panel 3554 is a pair of the sensor electrode 3527 and the in-cell sensor electrode 3529. The capacitance is detected by detecting the change in capacitance. The cross-sectional view of the sensor electrode 352 has a depth direction, and the electrode 3522 is opened in one region. 7 and the in-cell sensor electrode 3529 is not shielded.

[0076] Input / output panel with TN (Twisted Nematic) mode liquid crystal element The panel can also be operated with a similar electrode arrangement.

[0077] For example, the in-cell sensor electrode 3529 is electrically connected to the wiring 3510 or the wiring 3511. By connecting the pixels to the input / output panel, the pixels of the input / output panel can be configured.

[0078] FIG. 5A shows a schematic cross-sectional view of a part of a pixel of the input / output panel 3555.

[0079] The input / output panel 3555, like the input / output panel 3553, uses an IPS mode LCD panel. The change in capacitance formed between the sensor electrode 3527 and the sub-sensor electrode 3528 However, the secondary sensor electrode 3528 is a second The liquid crystal layer 3524 is disposed between the substrate 3543 and the layer 3524 containing the liquid crystal material. The electrode 3529 is formed of the same material as the electrode 3523 at the same time.

[0080] FIG. 5B shows a schematic cross-sectional view of a portion of a pixel of the input / output panel 3556. Like the input / output panel 3554, the panel 556 has a liquid crystal element to which the VA mode is applied.

[0081] The input / output panel 3556 is connected to the source or drain of the transistor 3521. and the electrode 3522 is connected to a wiring to which a common potential is applied. The sensor electrode 3527 and the in-cell sensor electrode 3529 are used as a pair of electrodes, and the capacitance By detecting the change, the capacitance detection is performed. 9 is formed at the same time as the electrode 3522 using the same material.

[0082] The structures shown in Figures 6(A), 6(B), and 6(C) are liquid crystals that use the FFS mode. The structure shown in these figures has a sensor electrode 3527 and an in-cell sensor electrode 35 29 is used as a pair of electrodes, and capacitance detection is performed by detecting changes in capacitance. In Figures 6(B) and 6(C), symbols common to other FFS structures are omitted. are.

[0083] FIG. 6(A) shows a schematic cross-sectional view of a part of the pixel of the input / output panel 3557A. The sensor electrode 3529 is formed of the same material as the electrode 3522 at the same time. is electrically connected to one of the source and drain of the transistor 3521. 22 is electrically connected to a wiring to which a common potential is applied.

[0084] FIG. 6(B) shows a schematic cross-sectional view of a part of the pixel of the input / output panel 3557B. The sensor electrode 3529 is formed of the same material as the electrode 3522 at the same time. is electrically connected to one of the source and drain of the transistor 3521. 23 is electrically connected to a wiring to which a common potential is applied.

[0085] FIG. 6(C) shows a schematic cross-sectional view of a part of the pixel of the input / output panel 3557C. The sensor electrode 3529 is formed of the same material as the electrode 3523 at the same time. is electrically connected to one of the source and drain of the transistor 3521. 23 is electrically connected to a wiring to which a common potential is applied.

[0086] The input / output panel which is one embodiment of the present invention may include a light-emitting element.

[0087] 7A shows a schematic cross-sectional view of a part of a pixel of the input / output panel 3558A. 3558A has a light emitting element 3570, and the light emitting element 3570 has an electrode 3571 and an electrode 3572. 72, and a layer 3 containing a light-emitting material provided between the electrode 3571 and the electrode 3572. The electrode 3571 and the electrode 3572 are arranged so that light emitted from the light-emitting element can be visually recognized. The electrode on the light-emitting side is made of a conductive material that transmits visible light. When the layer is in the opposite direction to the layer on which the circuit is formed, it transmits visible light as the cathode of the light-emitting element. A conductive material is used.

[0088] Electrode 3571 is made of aluminum, titanium, chromium, nickel, copper, yttrium, zirconium Metals such as tungsten, molybdenum, silver, tantalum, or tungsten, or materials mainly composed of these metals The alloy can be used as a single layer or a laminate structure.

[0089] The electrode 3572 can be made of a material that transmits visible light. Indium, indium tin oxide, indium zinc oxide, zinc oxide, gallium-doped oxide Conductive oxides such as zinc can be used. The in-cell sensor electrode 3529 is made of the same material as the electrode 3572 and is formed at the same time. and are not electrically connected to each other.

[0090] The input / output panel 3558A includes an insulating layer 3576 and a bonding layer 3577. 76 reduces the diffusion of water from the bonding layer 3577 to the layer 3573 containing the luminescent material, 3577 is a layer for bonding the first substrate 3541 and the second substrate 3543 together.

[0091] The input / output panel 3558A is configured such that the electrode 3571 is the source or drain of the transistor 3521. The sensor electrode 3527 and the in-cell sensor electrode 3528 are electrically connected to one side of the in-cell sensor electrode 3528. 529 is used as a pair of electrodes, and capacitance detection is performed by detecting changes in capacitance. .

[0092] As shown in FIG. 7(B), the sensor electrode 3527 is The first substrate 3541 is disposed between the in-cell sensor electrode 3527 and the in-cell sensor electrode 3529. By detecting the change in capacitance between the sensor electrode 3527 and the in-cell sensor electrode 3529, In this case, the light is incident on the layer 3573 containing the luminescent material. The electrode 3571 is made of a conductive material that transmits visible light. In addition, the cross-sectional view of FIG. 7(B) has a depth direction, and the electrode 3571 is opened in one region. That is, the electric field between the sensor electrode 3527 and the in-cell sensor electrode 3529 is 71, and the conductive material electrically connected to the transistor 3521. There are areas where

[0093] The input / output panel 3559 shown in FIG. 8A is the same as the input / output panel 35 shown in FIG. 51, or the I / O panel 3556 shown in Figure 5(B), similar to the FFS mode applied. The input / output panel 3559 has a liquid crystal element. The electrode 3529 is used as a pair of electrodes, and the change in capacitance is detected to perform capacitance detection. To practice knowledge.

[0094] The electrode 3522 of the input / output panel 3559 is formed of a conductive film that transmits visible light. That is, the electrode 3522 is reflective to light having a wavelength in the range of 400 nm or more and less than 800 nm. The reflectance is 1% or more, preferably 5% or more but less than 100%, and the transmittance is preferably 1% or more. A conductive film with a conductivity of 10% or more and less than 100% is used.

[0095] The electrode 3522 is made of silver (Ag) having a thickness of 1 nm to 30 nm, preferably 1 nm to 15 nm. ) or a conductive material containing aluminum (Al) can be used. can.

[0096] The electrode 3522 is made of a material selected from indium, tin, zinc, gallium, and silicon. Materials containing elements such as In oxide, Zn oxide, and In-S can be used. n-oxide (also called ITO), In-Sn-Si oxide (also called ITSO), In-Z n-oxide, In-Ga-Zn oxide, etc.

[0097] The electrode 3522 may be made of a film containing graphene or graphite. As the film containing graphene, a film containing graphene oxide was formed, and the film containing graphene oxide was reduced. By reducing the graphene, a film containing the graphene can be formed. Examples of the method include a method of applying heat and a method of using a reducing agent.

[0098] In the input / output panel 3559, the electrode 3522 is formed of the same material as the semiconductor layer 3574. In this structure, the insulating film 3575 is formed on the electrode 3522 and the semiconductor The layer 3574 may be made of an oxide semiconductor such as In-Ga-Zn oxide. good.

[0099] When the insulating film 3575 has a structure including a nitride insulating film such as a silicon nitride film, The oxide semiconductor is formed by supplying nitrogen or hydrogen from the insulating film 3575 by thermal diffusion. In other words, the oxide semiconductor has a high carrier density. Therefore, the electrode 3522 functions as an electrode. It can be used.

[0100] When the electrode 3522 is made of an oxide conductor (OC), the thickness is 30 nm or more. It can be 100 nm or less, or 100 nm or more and 400 nm or less.

[0101] The input / output panel 3560 shown in FIG. 8(B) is the same as the input / output panel 35 shown in FIG. 8(A). Similar to the liquid crystal display device 59, the liquid crystal display device 59 has a liquid crystal element to which the FFS mode is applied. The input / output panel 3560 is a transmissive type. The input / output panel 3560 is a liquid crystal element. The input / output panel 3560 is made up of a sensor electrode 3527 and an in-cell sensor electrode 3529 is used as a pair of electrodes, and capacitance detection is performed by detecting changes in capacitance. cormorant.

[0102] Also, a backlight BL is provided that can irradiate light L in the direction of the arrow 3581. The backlight BL can irradiate the layer containing the liquid crystal material with light. In addition, a functional film 3582 is provided. In one embodiment of the present invention, the functional film 3582 has a function of a polarizing plate. However, another functional film is set so as to sandwich a layer containing a liquid crystal material between the functional film and the functional film 3582. It can be done.

[0103] When each input / output panel described in this specification has a liquid crystal element, a conductive film that transmits visible light By using it as an electrode, it can be used as a transmissive liquid crystal element. By using the field sequential method to emit light in each color, a colored image is displayed on the liquid crystal element. Color display is possible without forming a film. At this time, the backlight emits all colors. When this is done, a white display is possible.

[0104] Each of the input / output panels that can be used in the input / output device according to one embodiment of the present invention has two or more features. For example, the input / output panel can be configured in FFS mode, VA mode, or other modes. In the liquid crystal driving method, it may have three electrodes. Alternatively, in the element of other display methods, It may be applied.

[0105] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. can be done.

[0106] (Embodiment 3) The input / output panel of one embodiment of the present invention may have a different structure from those in Embodiments 1 and 2. good.

[0107] In this embodiment mode, a reflective display element using a layer containing a liquid crystal material is used as the first display element, The display element having the function of emitting light is used as the second display element, and the input / output panel having both of these elements is used. The configuration of panel 700 will be described with reference to FIGS.

[0108] FIG. 9 is a block diagram illustrating a configuration of an input / output device of one embodiment of the present invention. It has an output panel.

[0109] FIG. 10 illustrates a configuration of an input / output panel that can be used in the input / output device of one embodiment of the present invention. 10 is a block diagram illustrating a configuration different from that shown in FIG. do.

[0110] FIG. 11 illustrates a configuration of an input / output panel that can be used in an input / output device according to one embodiment of the present invention. 11(A) is a top view of the input / output panel, and FIG. 11(B) is a top view of the input / output panel. 11(C) is a top view illustrating a part of a pixel of the input / output panel shown in FIG. 1 is a schematic diagram illustrating the configuration of a pixel shown in FIG.

[0111] 12 and 13 are cross-sectional views illustrating the configuration of the input / output panel. 1(A) is a cross-sectional view taken along the lines X1-X2, X3-X4, and X5-X6. FIG. 12(B) is a diagram for explaining a part of FIG. 12(A).

[0112] FIG. 13(A) is a cross-sectional view taken along the cutting lines X7-X8 and X9-X10 in FIG. 11(A). FIG. 13B is a diagram for explaining a part of FIG. 13A.

[0113] FIG. 14(A) is a bottom view illustrating a part of a pixel of the input / output panel shown in FIG. 11(B); FIG. 14(B) is a bottom view illustrating the configuration shown in FIG. 14(A) with some parts omitted.

[0114] FIG. 15 is a circuit diagram illustrating a configuration of a pixel circuit included in an input / output panel of one embodiment of the present invention. .

[0115] FIG. 16 is a schematic diagram illustrating the shape of a reflective film that can be used in the pixels of an input / output panel. .

[0116] In this specification, variables that take integer values ​​of 1 or more may be used as symbols. For example, (p) includes a variable p that takes an integer value of 1 or more, and identifies any of the components up to p. For example, the variables m and m, which take integer values ​​of 1 or more, and variable n, is a part of a code that identifies one of up to m × n components. It may be used in parts.

[0117] <Configuration example 1 of input / output panel> The input / output panel 700 described in this embodiment has a display area 231 (see FIG. 9). The input / output panel 700 may also include a driving circuit GD or a driving circuit SD.

[0118] The input / output panel may also have multiple driver circuits. For example, the input / output panel 7 00B has a driving circuit GDA and a driving circuit GDB (see FIG. 10).

[0119] <Display area 231> The display area 231 includes a group of pixels 702(i,1) through 702(i,n) and other pixels. A group of pixels 702(1,j) to 702(m,j), a scan line G1(i), and , (see FIG. 9, FIG. 14 or FIG. 15). Also, the scanning line G2(i) and the wiring CSC OM, a third conductive film ANO, and a signal line S2(j), where i is 1 or more and m or less. where j is an integer between 1 and n inclusive, and m and n are integers of 1 or greater.

[0120] A group of pixels 702(i,1) through 702(i,n) includes pixel 702(i,j). A group of pixels 702(i,1) to 702(i,n) are arranged in the row direction (arrows in the figure). The direction indicated by the arrow R1 is the same as that indicated by the arrow R1.

[0121] Another group of pixels 702(i,j) through 702(m,j) are pixels 702(i,j) ), and another group of pixels 702(1,j) to 702(m,j) are arranged in the row direction. They are arranged in the intersecting column direction (the direction indicated by the arrow C1 in the drawing).

[0122] The scanning lines G1(i) and G2(i) are arranged in a row direction and correspond to a group of pixels 70. 2(i,1) to pixel 702(i,n).

[0123] Another group of pixels 702(1,j) to 702(m,j) arranged in the column direction are , are electrically connected to signal line S1(j) and signal line S2(j).

[0124] <Drive circuit GD> The driving circuit GD has a function of supplying a selection signal based on control information.

[0125] For example, based on control information, the frequency is 30 Hz or more, preferably 60 Hz or more. This allows smooth display of moving images. It is possible.

[0126] For example, based on control information, the frequency is set to less than 30 Hz, preferably less than 1 Hz, and more preferably less than 1 minute. It has a function to supply a selection signal to one scan line at a frequency of less than once per flip-flop. A still image can be displayed with the car suppressed.

[0127] In addition, for example, when a plurality of drive circuits are provided, the frequency with which the drive circuit GDA supplies the selection signal is The frequency at which the driver circuit GDB supplies the selection signal can be made different. , the area where the moving image is displayed smoothly is higher in frequency than the area where the still image is displayed with flicker suppression. A selection signal can be supplied to the area to be displayed.

[0128] <Driver circuit SD, driver circuit SD1, driver circuit SD2> The drive circuit SD includes a drive circuit SD1 and a drive circuit SD2. The driving circuit SD2 has a function of supplying an image signal based on the information V11. The image signal is supplied based on the received image data (see FIG. 9).

[0129] The driver circuit SD1 generates an image signal to be supplied to a pixel circuit electrically connected to one display element. Specifically, it has the function of generating a signal with inverted polarity. This makes it possible to drive, for example, a liquid crystal display element.

[0130] The drive circuit SD2 electrically connects the first display element to another display element that uses a different method for displaying. It has the function of generating image signals to be supplied to pixel circuits that are connected to it. For example, The element can be driven.

[0131] For example, various sequential circuits such as shift registers can be used for the drive circuit SD. .

[0132] For example, an integrated circuit in which the drive circuits SD1 and SD2 are integrated is Specifically, an integrated circuit formed on a silicon substrate can be used as a driver circuit SD It can be used for.

[0133] For example, the COG (Chip on Glass) method or the COF (Chip on Fi Using the lm) method, integrated circuits can be mounted as terminals. Specifically, anisotropic conductive films can be used to mount an integrated circuit to the terminals.

[0134] <Pixel configuration example> The pixel 702(i,j) has a first display element 750(i,j), a second display element 550(i , j) and a part of the functional layer 520 (FIG. 11(C), FIG. 12(A) and FIG. 13( See A).

[0135] <Functional layer> The functional layer 520 includes a first conductive film, a second conductive film, an insulating film 501C, and a pixel circuit 530. (i, j) (see FIG. 12(A) and FIG. 12(B)). , an insulating film 521 , an insulating film 528 , an insulating film 518 , and an insulating film 516 .

[0136] The functional layer 520 includes a region sandwiched between the substrate 570 and the substrate 770 .

[0137] <Insulating film 501C> The insulating film 501C has a region sandwiched between the first conductive film and the second conductive film, 501C has an opening 591A (see FIG. 13(A)).

[0138] <First conductive film> For example, the first electrode 751(i,j) of the first display element 750(i,j) is connected to a first conductive The first conductive film can be used as a film. The first conductive film is electrically connected to the first electrode 751(i, j). will be done.

[0139] <Second conductive film> For example, the conductive film 512B can be used as the second conductive film. The second conductive film has an area overlapping the first conductive film in the opening 591A. By the way, in the opening 591A provided in the insulating film 501C, The first conductive film electrically connected to the second conductive film can be called a through electrode.

[0140] The second conductive film is electrically connected to the pixel circuit 530(i, j). The source electrode or drain electrode of the transistor used in the switch SW1 of 30(i,j) A conductive film that functions as the second conductive film can be used as the second conductive film.

[0141] <Pixel circuit> The pixel circuit 530(i,j) includes a first display element 750(i,j) and a second display element 5 50(i,j) (see Figure 15).

[0142] This allows, for example, the first pixel circuit to be formed using the same process. A display element and a second display element that displays using a method different from that of the first display element are driven. Specifically, a reflective display element is used as the first display element, and power consumption can be reduced. Or, it is possible to display high contrast images in bright external light environments. Alternatively, a second display element that emits light can be used to display a dark image. The first display element can display an image satisfactorily under the above-mentioned conditions. and the diffusion of impurities between the first display element and the second display element or between the first display element and the pixel circuit. As a result, a novel input / output device with excellent convenience and reliability can be provided. can be provided.

[0143] Switches, transistors, diodes, resistors, inductors, or capacitors are used in the pixel circuit. path 530(i,j).

[0144] For example, one or more transistors can be used as switches. Multiple transistors connected in series, multiple transistors connected in series and parallel Multiple transistors connected in combination can be used in a switch.

[0145] For example, the pixel circuit 530(i,j) is connected to the signal line S1(j), the signal line S2(j), and the scanning line G 1(i), the scanning line G2(i), the wiring CSCOM and the third conductive film ANO are electrically connected. (See FIG. 15.) The conductive film 512A is electrically connected to the signal line S1(j). (See FIG. 13(A) and FIG. 15).

[0146] The pixel circuit 530(i,j) includes a switch SW1 and a capacitance element C11 (see FIG. 15).

[0147] The pixel circuit 530(i,j) includes a switch SW2, a transistor M, and a capacitance element C12. include.

[0148] For example, a gate electrode electrically connected to the scanning line G1(i) and a gate electrode electrically connected to the signal line S1(j) are and a first electrode electrically connected to the first terminal of the transistor. can.

[0149] The capacitor C11 is electrically connected to a second electrode of the transistor used in the switch SW1. The first electrode is electrically connected to the wiring CSCOM, and the second electrode is electrically connected to the wiring CSCOM.

[0150] For example, a gate electrode electrically connected to the scanning line G2(i) and a gate electrode electrically connected to the signal line S2(j) are and a first electrode electrically connected to the first terminal of the transistor. can.

[0151] The transistor M is electrically connected to the second electrode of the transistor used in the switch SW2. The gate electrode is electrically connected to the third conductive film ANO, and a first electrode is electrically connected to the third conductive film ANO.

[0152] Note that a transistor including a conductive film sandwiching a semiconductor film between a gate electrode and the conductive film can be used for the transistor M. For example, the same as the gate electrode of the transistor M A conductive film electrically connected to a wiring capable of supplying a potential is used as the conductive film. This can be done.

[0153] The capacitor C12 is electrically connected to a second electrode of the transistor used in the switch SW2. a first electrode electrically connected to the first electrode of the transistor M; and a second electrode electrically connected to the first electrode of the transistor M. Has.

[0154] The first electrode of the first display element 750(i, j) is connected to the transistor used for the switch SW1. The second electrode of the first display element 750(i,j) is electrically connected to the second electrode of the first display element 750(i,j). This electrode is electrically connected to the wiring VCOM1. It can be moved.

[0155] The third electrode 551(i,j) of the second display element 550(i,j) is connected to the transistor M and the fourth electrode 552 of the second display element 550(i,j) is electrically connected to the second electrode of the second display element 550(i,j). The second display element 550(i, j) can be driven.

[0156] <First Display Element 750(i,j)> For example, a display element having a function of controlling reflection or transmission of light may be used as the first display element 750. (i, j) can be used. Specifically, a reflective liquid crystal display element can be used as the first display element. 750(i,j) or a shutter-type MEMS display element, etc. By using a reflective display element, the power consumption of the input / output panel can be reduced. can be suppressed.

[0157] The first display element 750(i,j) has a first electrode 751(i,j), a second electrode 752, and and a layer 753 containing a liquid crystal material. The second electrode 752 is connected to the first electrode 751(i,j ) are arranged so that an electric field that controls the alignment of the liquid crystal material is formed between them (FIG. 12(A) and Figure 13(A)).

[0158] First electrodes 751(i, j) of the input / output panel 700 shown in FIG. 13(A), The second electrode 752 can drive the liquid crystal display element using a VA mode driving method. can.

[0159] The first display element 750(i,j) includes an alignment film AF1 and an alignment film AF2. The alignment film AF2 has a region where a layer 753 containing a liquid crystal material is sandwiched between the alignment film AF2 and the alignment film AF1.

[0160] <Second Display Element 550(i,j)> For example, a display element having a function of emitting light is used as the second display element 550(i, j). Specifically, an organic EL element or the like can be used.

[0161] The second display element 550(i, j) has a function of emitting light toward the insulating film 501C. (See Figure 12(A)).

[0162] The second display element 550(i,j) is used to view the display using the first display element 750(i,j). In a part of the visible range, the display using the second display element 550(i, j) is visible. For example, the first display element is arranged to display image information by controlling the intensity of reflection of external light. The direction in which external light is incident on and reflected from the display element 750(i, j) is indicated by a dashed arrow in the drawing ( 13(A)). In addition, within the range where the display using the first display element 750(i, j) can be seen, The direction in which the second display element 550(i, j) emits light is indicated by a solid arrow in the figure. (See FIG. 12(A)).

[0163] As a result, in a part of the area where the display using the first display element can be viewed, The display using the second display element can be visually recognized. Alternatively, the attitude of the input / output panel can be changed. The user can see the display without any change. As a result, there is no need for convenience or reliability. An excellent new input / output panel can be provided.

[0164] The second display element 550(i,j) has a third electrode 551(i,j) and a fourth electrode 552 and a layer 553(j) containing a light-emitting material (see FIG. 12(A)).

[0165] The fourth electrode 552 has an area that overlaps with the third electrode 551(i,j).

[0166] The layer 553(j) containing the light-emitting material is connected to the third electrode 551(i,j) and the fourth electrode 551(i,j). 52.

[0167] The third electrode 551(i,j) is electrically connected to the pixel circuit 530(i,j) at the connection portion 522. The third electrode 551(i, j) is electrically connected to the third conductive film ANO. , and the fourth electrode 552 is electrically connected to the fourth conductive film VCOM2 (FIG. 1 5).

[0168] <Interlayer film> The input / output panel described in this embodiment includes an intermediate film 754A, an intermediate film 754B, and and an intermediate film 754C.

[0169] The intermediate film 754A has a region where the first conductive film is sandwiched between the intermediate film 754A and the insulating film 501C. The intermediate film 754B has a region in contact with the first electrode 751(i, j). The intermediate film 754C has a region in contact with the conductive film 511C.

[0170] <Insulating film 501A> The input / output panel described in this embodiment has an insulating film 501A (see FIG. 12(A)). reference).

[0171] The insulating film 501A has a first opening 592A, a second opening 592B, and an opening 592C. (See FIG. 12(A) or FIG. 13(A)).

[0172] The first opening 592A is an area overlapping the intermediate film 754A and the first electrode 751(i, j). The insulating film 501C has a region overlapping with the intermediate film 754A and the insulating film 501C.

[0173] The second opening 592B has a region overlapping with the intermediate film 754B and the conductive film 511B.

[0174] The opening 592C has a region that overlaps with the intermediate film 754C and the conductive film 511C.

[0175] The insulating film 501A has a region where an insulating film 501C is sandwiched between the insulating film 501A and the conductive film 511B. The insulating film 501A contacts the conductive film 511B in the opening 591B of the insulating film 501C. The insulating film 501A contacts the conductive film 511C at an opening 591C of the insulating film 501C.

[0176] The insulating film 501A is formed by interposing the intermediate film 754A and the insulating film 501A along the periphery of the first opening 592A. The insulating film 501A has an area sandwiched between the second opening 592B and the insulating film 501C. Along the periphery, there is provided a region sandwiched between the intermediate film 754B and the conductive film 511B.

[0177] <Insulating film 521, insulating film 528, insulating film 518, insulating film 516, etc.> The insulating film 521 is formed between the pixel circuit 530(i,j) and the second display element 550(i,j). The area is sandwiched between the

[0178] The insulating film 528 is disposed between the insulating film 521 and the substrate 570, and the second display element 550 An opening is provided in the area overlapping with (i, j).

[0179] The insulating film 528 formed along the periphery of the third electrode 551(i, j) Prevent short-circuiting of electrodes 1(i,j) and 4.

[0180] The insulating film 518 has a region sandwiched between the insulating film 521 and the pixel circuit 530(i, j). can.

[0181] The insulating film 516 has a region sandwiched between the insulating film 518 and the pixel circuit 530(i, j). can.

[0182] <Terminals, etc.> The input / output panel described in this embodiment has terminals 519B and 519C. do.

[0183] The terminal 519B includes a conductive film 511B and an intermediate film 754B. The terminal 519B has an area that contacts the conductive film 511B. The terminal 519B is electrically connected to the signal line S1(j), for example. is connected to.

[0184] The terminal 519C includes a conductive film 511C and an intermediate film 754C. The conductive film 511C has an area in contact with the wiring VCOM1. is connected to.

[0185] The conductive material CP is sandwiched between the terminal 519C and the second electrode 752. The electrode 752 is electrically connected. For example, conductive particles can be used as the conductive material CP. Cut.

[0186] <Substrate etc.> The input / output panel described in this embodiment includes a substrate 570 and a substrate 770. .

[0187] The substrate 770 has an area overlapping the substrate 570. The substrate 770 has a function between the substrate 570 and the substrate 770. The area includes a region that sandwiches the functional layer 520.

[0188] <Joining layer, sealing material, structure, etc.> The input / output panel described in this embodiment includes the bonding layer 505, the sealing material 705, and a structure The body KB1 and the body KB2 are connected to each other.

[0189] The bonding layer 505 includes an area sandwiched between the functional layer 520 and the substrate 570, and 0 and the substrate 570.

[0190] The encapsulant 705 includes an area sandwiched between the functional layer 520 and the substrate 770, and 0 and the substrate 770.

[0191] The structure KB1 has a function of providing a predetermined gap between the functional layer 520 and the substrate 770. .

[0192] <Functional membranes, etc.> The input / output panel described in this embodiment includes a light-shielding film BM, an insulating film 771, and a functional film 770P and a functional film 770D. Also, a colored film CF1 and a colored film CF2 are included. do.

[0193] The light-shielding film BM has an opening in the area overlapping with the first display element 750(i, j). CF2 is disposed between the insulating film 501C and the second display element 550(i, j), and has an opening The portion 751H has an area that overlaps with the portion 751H (see FIG. 12(A)).

[0194] The insulating film 771 is formed between the colored film CF1 and the layer 753 containing the liquid crystal material or between the light-shielding film BM and the liquid crystal material The colored film CF1 has a region sandwiched between the layers 753 containing the coloring material. Alternatively, the liquid crystal material can be removed from the light-shielding film BM or the colored film CF1. This can suppress the diffusion of impurities into the layer 753 containing the material.

[0195] The functional film 770P has an area that overlaps with the first display element 750(i,j).

[0196] The functional film 770D has an area that overlaps with the first display element 750(i, j). 0D is disposed so as to sandwich a substrate 770 between it and the first display element 750(i,j). This makes it possible to diffuse the light reflected by the first display element 750(i,j), for example. Cut.

[0197] <Examples of components> The input / output panel 700 includes a substrate 570, a substrate 770, a structure KB1, a sealing material 705 or a bonding material. It has a composite layer 505.

[0198] The input / output panel 700 also includes a functional layer 520, an insulating film 521, or an insulating film 528. .

[0199] The input / output panel 700 also includes signal lines S1(j), signal lines S2(j), and scanning lines G1(i). , the scanning line G2(i), the wiring CSCOM or the third conductive film ANO.

[0200] The input / output panel 700 also includes a first conductive film or a second conductive film.

[0201] The input / output panel 700 also includes a terminal 519B, a terminal 519C, a conductive film 511B, or a conductive It has a membrane 511C.

[0202] The input / output panel 700 also includes a pixel circuit 530(i, j) or a switch SW1. .

[0203] The input / output panel 700 also includes a first display element 750(i,j), a first electrode 751(i , j), a reflective film, an opening, a layer 753 containing a liquid crystal material, or a second electrode 752.

[0204] The input / output panel 700 also includes an alignment film AF1, an alignment film AF2, a colored film CF1, and a colored film CF 2. It has a light-shielding film BM, an insulating film 771, and a functional film 770P or a functional film 770D.

[0205] The input / output panel 700 also includes a second display element 550(i,j), a third electrode 551(i , j), a fourth electrode 552 or a layer 553(j) containing a light-emitting material.

[0206] The input / output panel 700 also has an insulating film 501A and an insulating film 501C.

[0207] The input / output panel 700 also includes a driving circuit GD or a driving circuit SD.

[0208] <Board 570> A material having heat resistance enough to withstand heat treatment during the manufacturing process can be used for the substrate 570, etc. For example, a material having a thickness of 0.7 mm or less and 0.1 mm or more can be used for the substrate 570. Specifically, a material that has been polished to a thickness of about 0.1 mm can be used.

[0209] For example, 6th generation (1500mm x 1850mm), 7th generation (1870mm x 2200 mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 2800 Large glass substrates such as 10th generation (2950mm x 3400mm) 570, etc. This allows the creation of large input / output devices. .

[0210] The substrate 570 may be made of an organic material, an inorganic material, or a composite material of an organic material and an inorganic material. For example, inorganic materials such as glass, ceramics, and metals can be used for the substrate 570. It is possible.

[0211] Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, Luminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire, etc., are used as the substrate 57 Specifically, it can be used for inorganic oxide films, inorganic nitride films, inorganic oxynitride films, etc. A film or the like can be used for the substrate 570. For example, a silicon oxide film or a silicon nitride film can be used. A film, a silicon oxynitride film, an aluminum oxide film, or the like can be used for the substrate 570, etc. Stainless steel or aluminum may be used for the substrate 570.

[0212] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a silicon A compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. can be used as the substrate 570. This allows semiconductor elements to be formed on the substrate 570 or the like.

[0213] For example, organic materials such as resin, resin film, or plastic may be used for the substrate 570. Specifically, polyester, polyolefin, polyamide, polyimide, A resin film or a resin plate such as a carbonate or acrylic resin is used as the substrate 570. You can be there.

[0214] For example, a metal plate, a thin glass plate, or a film of an inorganic material is laminated to a resin film or the like. A composite material such as a fibrous or particulate metal can be used for the substrate 570. A composite material in which glass or inorganic materials are dispersed in a resin film is used for the substrate 570. For example, a fibrous or particulate resin or organic material can be dispersed in an inorganic material. The composite material can be used for the substrate 570, etc.

[0215] In addition, a single layer material or a material having multiple layers stacked thereon can be used for the substrate 570, etc. For example, a material that is laminated with a base material and an insulating film that prevents the diffusion of impurities contained in the base material is called a substrate. It can be used for the plate 570 etc. Specifically, the diffusion of impurities contained in the glass a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like, which prevents Alternatively, a material in which a plurality of films are laminated can be used for the substrate 570. Alternatively, a material in which a resin and a resin are laminated can be used for the substrate 570. Silicon oxide film, silicon nitride film or silicon oxynitride film that prevents the diffusion of impurities that penetrate oil A material on which a silicon film or the like is laminated can be used for the substrate 570 or the like.

[0216] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate A resin film such as acrylic resin, a resin plate, or a laminated material is used as the substrate 570. You can be there.

[0217] Specifically, polyester, polyolefin, polyamide (nylon, aramid, etc.), Polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin or silicone A material containing a resin having a siloxane bond, such as corn, can be used for the substrate 570. .

[0218] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PE N), polyethersulfone (PES), acrylic, etc. may be used for the substrate 570, etc. Or, cycloolefin polymer (COP), cycloolefin copolymer (COC) etc. can be used.

[0219] Furthermore, paper or wood can be used for the substrate 570 and the like.

[0220] For example, a flexible substrate can be used as the substrate 570 or the like.

[0221] Note that a method of forming a transistor, a capacitor, or the like directly on a substrate can be used. In addition, for example, a substrate for a process that has heat resistance to heat applied during a manufacturing process may be used to form a transistor or A capacitor element or the like is formed, and the formed transistor or capacitor element or the like is transferred to a substrate 570 or the like. This method allows, for example, the formation of a transistor or a semiconductor device on a flexible substrate. Alternatively, a capacitor element or the like can be formed.

[0222] <Board 770> For example, a light-transmitting material can be used for the substrate 770. The substrate 770 can be made of a material selected from materials that can be used for the semiconductor device.

[0223] For example, aluminosilicate glass, tempered glass, chemically tempered glass, or sapphire can be used as the input and output. This can be suitably used for the substrate 770 arranged on the side of the force panel closest to the user. This makes it possible to prevent damage or scratches to the input / output panel during use.

[0224] For example, a material having a thickness of 0.7 mm or less and 0.1 mm or more may be used for the substrate 770. Specifically, a polished substrate can be used to reduce the thickness. This allows the functional film 770D to be disposed close to the first display element 750(i, j). As a result, blurring of the image can be reduced and the image can be displayed clearly.

[0225] <Structure KB1> For example, organic materials, inorganic materials, or composite materials of organic and inorganic materials are used for the structure KB1, etc. This allows a predetermined gap to be provided between the components sandwiching the structure KB1, etc. It is possible.

[0226] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a combination of a plurality of resins selected from these. A composite material can be used for the structure KB1. Also, a photosensitive material can be used to form the structure. It may be done.

[0227] <Sealant 705> Inorganic materials, organic materials, or composite materials of inorganic and organic materials can be used as the sealing material 705. This can be done.

[0228] For example, an organic material such as a heat-melting resin or a hardening resin may be used as the sealing material 705. This can be done.

[0229] For example, reactive curing adhesives, light curing adhesives, heat curing adhesives and / or anaerobic adhesives. An organic material such as an adhesive can be used as the sealant 705 or the like.

[0230] Specifically, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyrate) Adhesives containing Ethylene Vinyl Acetate (EVA) resin, etc. are used as sealing materials 705, etc. It can be used.

[0231] <Joining layer 505> For example, the material that can be used for the sealant 705 can be used for the bonding layer 505 .

[0232] <Insulating film 521> For example, insulating inorganic materials, insulating organic materials, or insulating materials containing inorganic and organic materials. A composite material can be used for the insulating film 521 and the like.

[0233] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a film selected from these. A laminated material obtained by laminating a plurality of such materials can be used for the insulating film 521. For example, Silicon film, silicon nitride film, silicon oxynitride film, aluminum oxide film, or the like, or A film containing a laminated material in which a plurality of materials selected from the following can be used as the insulating film 521. .

[0234] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a combination of multiple resins selected from these A layer material, a composite material, or the like can be used for the insulating film 521. The insulating film may be formed using a material that can be used.

[0235] As a result, for example, steps resulting from various structures overlapping the insulating film 521 can be flattened. This can be done.

[0236] <Insulating film 528> For example, the material that can be used for the insulating film 521 can be used for the insulating film 528, etc. Specifically, the insulating film 528 can be a film containing polyimide and having a thickness of 1 μm.

[0237] <Insulating film 501A> For example, the material that can be used for the insulating film 521 can be used for the insulating film 501A. Also, for example, a material having a function of supplying hydrogen can be used for the insulating film 501A. do.

[0238] Specifically, a material containing silicon and oxygen and a material containing silicon and nitrogen are stacked. The layered material can be used for the insulating film 501A. For example, the material can be made of a material that releases hydrogen by heating or the like. The insulating film 501A is made of a material having a function of supplying the released hydrogen to other components. Specifically, hydrogen taken in during the manufacturing process can be released by heating or the like, and other structures can be formed. A material having a function of supplying the insulating film 501A to the composition can be used for the insulating film 501A.

[0239] For example, silicon and oxide formed by chemical vapor deposition using silane or the like as a source gas. A film containing silicon can be used for the insulating film 501A.

[0240] Specifically, a material containing silicon and oxygen with a thickness of 200 nm to 600 nm is used. A material containing silicon and nitrogen and having a thickness of about 200 nm is laminated on the insulating film 501A. It can be used for.

[0241] <Insulating film 501C> For example, the material that can be used for the insulating film 521 can be used for the insulating film 501C. Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. This makes it possible to suppress the diffusion of impurities into the pixel circuit or the second display element, etc. .

[0242] For example, a 200 nm thick film containing silicon, oxygen, and nitrogen is used as the insulating film 501C. It is possible.

[0243] <Interlayer film 754A, interlayer film 754B, interlayer film 754C> For example, the thickness is 10 nm or more and 500 nm or less, preferably 10 nm or more and 100 nm or less. A film having the above structure can be used as the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C. In this specification, the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C is It is called an intermediate film.

[0244] For example, a material having the function of permeating or supplying hydrogen can be used for the intermediate film.

[0245] For example, a conductive material can be used for the intermediate film.

[0246] For example, a light-transmitting material can be used for the intermediate film.

[0247] Specifically, materials containing indium and oxygen, indium, gallium, zinc and oxygen or a material containing indium, tin and oxygen can be used for the intermediate film. These materials have the ability to allow hydrogen to pass through.

[0248] Specifically, a 50 nm thick film or a 50 nm thick film containing indium, gallium, zinc, and oxygen A 100 nm film can be used for the intermediate film.

[0249] It is also possible to use a material with a film laminated thereon that functions as an etching stopper for the intermediate film. Specifically, a 50 nm thick film containing indium, gallium, zinc, and oxygen was a 20 nm thick film containing indium, tin, and oxygen, and a laminated material in this order. can be used as the interlayer.

[0250] <Wiring, terminal, conductive film> Conductive materials can be used for wiring etc. Specifically, conductive materials can be used for , signal line S1(j), signal line S2(j), scanning line G1(i), scanning line G2(i), wiring C SCOM, third conductive film ANO, terminal 519B, terminal 519C, terminal 719, conductive film 51 1B or conductive film 511C.

[0251] For example, inorganic conductive materials, organic conductive materials, metals, or conductive ceramics can be used for wiring etc. It can be used for.

[0252] Specifically, aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, and molybdenum , a metal selected from tungsten, nickel, iron, cobalt, palladium, or manganese The elements can be used for wiring, etc. Alternatively, alloys containing the above-mentioned metal elements can be used. In particular, copper and manganese alloys can be used for wet etching. It is suitable for microfabrication.

[0253] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a titanium nitride film on a titanium nitride film, Two-layer structure with a tungsten film laminated on a titanium nitride film, two-layer structure with a tungsten film laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium film or a tungsten nitride film; A three-layer structure in which an aluminum film is layered on top of the titanium film, and a titanium film is then formed on top of that. etc. can be used for wiring etc.

[0254] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, Conductive oxides such as zinc oxide doped with gallium can be used for wiring and the like.

[0255] Specifically, a film containing graphene or graphite can be used for wiring or the like.

[0256] For example, a film containing graphene oxide is formed and reduced to obtain a graphene oxide film. As a reduction method, a film containing graphene can be formed. and a method using a reducing agent.

[0257] For example, a film containing metal nanowires can be used for wiring. Nanowires containing such nanowires can be used.

[0258] Specifically, conductive polymers can be used for wiring and the like.

[0259] For example, the terminal 519B and the flexible printed circuit board F are connected by using the conductive material ACF1. PC1 can be electrically connected.

[0260] <First Conductive Film, Second Conductive Film> For example, a material that can be used for wiring or the like can be used for the first conductive film or the second conductive film. This can be done.

[0261] In addition, the first electrode 751(i,j) or a wiring or the like can be used as the first conductive film.

[0262] Also, the source electrode or drain electrode of the transistor that can be used for the switch SW1 The conductive film 512B functioning as an electrode, a wiring, or the like can be used as the second conductive film.

[0263] <First Display Element 750(i,j)> For example, a display element having a function of controlling reflection or transmission of light may be used as the first display element 750. (i, j) can be used. For example, a configuration in which a liquid crystal element and a polarizing plate are combined, or A shutter-type MEMS display element can be used. Specifically, a reflective liquid crystal display The display element can be used as the first display element 750(i,j). By using this, it is possible to reduce the power consumption of the input / output panel.

[0264] For example, IPS (In-Plane-Switching) mode, TN (Twiste d Nematic) mode, FFS (Fringe Field Switching) ) mode, ASM (Axially Symmetric aligned Micro -cell) mode, OCB (Optically Compensated Bias fringence mode, FLC (Ferroelectric Liquid Crystal Crystal mode, AFLC (AntiFerroelectric Liquid It uses a liquid crystal element that can be driven using a driving method such as a (crystal) mode. It is possible.

[0265] Furthermore, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment mode, PVA (Patterned Ve Orthogonal Alignment mode, ECB (Electrically Co ntrolled Birefringence) mode, CPA(Continuouou) mode Pinwheel Alignment mode, ASV (Advanced Su A liquid crystal element that can be driven using a driving method such as a (per-View) mode is used. It is possible.

[0266] The first display element 750(i,j) includes a first electrode, a second electrode, and a layer containing a liquid crystal material. The layer containing the liquid crystal material has its orientation controlled by a voltage between the first electrode and the second electrode. For example, the liquid crystal material may be oriented in the thickness direction (also called the vertical direction) of the layer containing the liquid crystal material. ), an electric field in a direction crossing the vertical direction (also called the horizontal or diagonal direction) is applied to the liquid crystal material to orient it. It can be used to control the electric field.

[0267] <Layer 753 containing liquid crystal material> For example, thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, ferroelectric Liquid crystal, antiferroelectric liquid crystal, etc. can be used in the layer containing the liquid crystal material. Liquids that exhibit smectic, cubic, chiral nematic, and isotropic phases Alternatively, a liquid crystal material exhibiting a blue phase can be used.

[0268] <First electrode 751(i,j)> For example, a material used for wiring or the like can be used for the first electrode 751(i, j). In practice, a reflective film can be used for the first electrode 751(i, j). A material in which a conductive film having an opening and a reflective film having an opening are laminated is formed as the first electrode 751(i, j ) can be used.

[0269] <Reflective film> For example, a material that reflects visible light can be used for the reflective film. Specifically, a material containing silver can be used. For example, a material containing silver and palladium or a material containing silver and palladium can be used for the reflective film. Materials containing copper and the like can be used for the reflective film.

[0270] The reflective film reflects light that passes through the layer 753 containing the liquid crystal material. The first display element 750 can be a reflective liquid crystal element. A material with convexities can be used for the reflective film. This allows the incident light to be reflected in various directions. It can be reflected in any direction to produce a white display.

[0271] For example, the first conductive film or the first electrode 751(i, j) can be used as a reflective film. do.

[0272] For example, a region sandwiched between a layer 753 containing a liquid crystal material and a first electrode 751(i, j) is provided. Alternatively, a transparent film may be formed between the layer 753 containing the liquid crystal material. The film having the area sandwiching the first electrode 751(i, j) having the reflecting property may be a reflective film. can.

[0273] The reflective film has an area that does not block the light emitted from the second display element 550(i, j), for example. It has a shape that can be used.

[0274] For example, a shape with one or more openings can be used in the reflective film.

[0275] Shapes such as polygons, rectangles, ellipses, circles, or crosses can be used for the openings. The openings 751H may have a stripe-like shape, a slit-like shape, or a checkerboard-like shape.

[0276] If the ratio of the total area of ​​the openings 751H to the total area of ​​the non-openings is too large, the first display The display using element 750(i,j) becomes dark.

[0277] In addition, if the ratio of the total area of ​​the openings 751H to the total area of ​​the non-openings is too small, The display using the display element 550(i, j) becomes dark. This may undermine the reliability of 550(i,j).

[0278] For example, the opening 751H of the pixel 702(i,j+1) adjacent to the pixel 702(i,j) is , in the row direction (the direction indicated by the arrow R1 in the drawing) passing through the opening 751H of the pixel 702(i,j). 16A). Alternatively, for example, the pixels 702(i, The opening 751H of the pixel 702(i+1,j) adjacent to the pixel 702(i,j) is The electrodes are arranged on a straight line that passes through the opening 751H and extends in the column direction (the direction indicated by the arrow C1 in the drawing). (See Figure 16(B)).

[0279] For example, the opening 751H of the pixel 702(i,j+2) is the opening of the pixel 702(i,j). 751H and are arranged on a straight line extending in the row direction (see FIG. 16(A)). The opening 751H of pixel 702(i,j+1) is the opening 751H of pixel 702(i,j) and On a line perpendicular to the line between the opening 751H of the pixel 702(i, j+2) and the opening 751H of the pixel 702(i, j+2), It is arranged.

[0280] Or, for example, the opening 751H of the pixel 702(i+2,j) The electrodes are arranged on a straight line extending in the column direction and passing through the opening 751H (see FIG. 16(B)). For example, the opening 751H of the pixel 702(i+1,j) is the same as the opening of the pixel 702(i,j). The line between the opening 751H of the pixel 702(i+2,j) and the opening 751H of the pixel 702(i+2,j) They are arranged on perpendicular straight lines.

[0281] As a result, a second element having an area overlapping the opening of another pixel adjacent to the first pixel is formed. The second display element has an area overlapping the opening of the first pixel. The second display element of the pixel is displayed on the second display element of another pixel adjacent to the pixel. Alternatively, a display element that displays a different color from the color displayed on the display screen may be provided. As a result, it is possible to reduce the difficulty of arranging a plurality of display elements adjacent to each other. It is possible to provide a novel input / output panel that is highly convenient and reliable.

[0282] For example, an area 751E that does not block the light emitted by the second display element 550(i, j) is A material having a shape in which the end is cut off so as to form a reflective film can be used. Specifically, the column direction (the direction indicated by the arrow C1 in the figure) is short. The first electrode 751(ij) with the end cut off can be used as a reflective film. .

[0283] <Second electrode 752> For example, a conductive material can be used for the second electrode 752. A light-transmitting material can be used for the second electrode 752.

[0284] For example, a conductive oxide, a thin metal film or a metal nanowire that is thin enough to transmit light can be used as the second It can be used for the electrode 752.

[0285] Specifically, the second electrode 752 can be made of a conductive oxide containing indium. Alternatively, a metal thin film having a thickness of 1 nm or more and 10 nm or less can be used for the second electrode 752. Alternatively, metal nanowires containing silver can be used for the second electrode 752.

[0286] Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, The second electrode 75 is made of zinc oxide doped with gallium, zinc oxide doped with aluminum, or the like. It can be used for 2.

[0287] <Alignment film AF1, alignment film AF2> For example, a material containing polyimide or the like can be used for the alignment film AF1 or AF2. Specifically, rubbing or photo-alignment technology is used to align the liquid crystal material in a predetermined direction. Materials formed using the method can be used.

[0288] For example, a film containing a soluble polyimide can be used as the alignment film AF1 or AF2. This allows the temperature required to form the alignment film AF1 to be lowered. As a result, damage to other components when forming the alignment film AF1 can be reduced. Cut.

[0289] <Colored film CF1, Colored film CF2> A material that transmits light of a predetermined color can be used for the colored film CF1 or the colored film CF2. This allows the colored film CF1 or CF2 to be used as, for example, a color filter. For example, a material that transmits blue, green, or red light can be used as the colored film CF1 or the colored film CF2. It can be used for CF2. Also, a material that transmits yellow light or white light can be used as a colored film. It can be used for.

[0290] In addition, a material that converts irradiated light into light of a predetermined color can be used for the colored film CF2. Specifically, quantum dots can be used for the colored film CF2. This allows for the improvement of color purity. It can make a high display.

[0291] <Light shielding film BM> A material that blocks light transmission can be used for the light-shielding film BM. For example, it can be used for a black matrix.

[0292] <Insulating film 771> For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771. do.

[0293] <Functional membrane 770P, Functional membrane 770D> For example, anti-reflection films, polarizing films, retardation films, light diffusion films or light condensing films. A film or the like can be used for the functional film 770P or the functional film 770D.

[0294] Specifically, a film containing a dichroic dye can be used as the functional film 770P or the functional film 770D. Alternatively, a material having a columnar structure with an axis aligned in a direction intersecting the surface of the substrate can be used. This can be used for the functional film 770P or the functional film 770D. It can be made to transmit light easily in one direction and scatter light easily in another direction.

[0295] In addition, it has an anti-static film that prevents dust from adhering, a water-repellent film that makes it difficult for dirt to adhere, and a film that improves the appearance of the surface as it is used. A hard coat film that suppresses the occurrence of scratches can be used for the functional film 770P.

[0296] Specifically, a circularly polarized film can be used for the functional film 770P. Film can be used for the functional film 770D.

[0297] <Second Display Element 550(i,j)> For example, a light-emitting element can be used for the second display element 550(i,j). , organic electroluminescence element, inorganic electroluminescence element, light-emitting diode LED, or QLED (Quantum-dot Light Emitting Diode) de) can be used for the second display element 550(i,j).

[0298] For example, a light-emitting organic compound can be used for the layer 553(j) containing the light-emitting material. .

[0299] For example, quantum dots can be used in the layer 553(j) containing the luminescent material. This allows for narrower half-width and brighter colored light to be emitted.

[0300] For example, a laminated material that emits blue light, a laminated material that emits green light, The laminated material is laminated so as to emit red light or red light. can be used for layer 553(j) including

[0301] For example, a strip-shaped laminated material that is long in the column direction along the signal line S2(j) is It can be used for layer 553(j).

[0302] Furthermore, for example, a laminated material that is laminated so as to emit white light may be formed by adding a layer containing a light-emitting material. 553(j). Specifically, a light-emitting device containing a fluorescent material that emits blue light can be used. a layer containing a fluorescent material and a layer containing a non-fluorescent material that emits green and red light; The laminated material is a layer including a material other than a fluorescent material that emits yellow light, and a luminescent material. The material may be used for layer 553(j).

[0303] For example, a material that can be used for wiring or the like can be used for the third electrode 551(i, j). can.

[0304] For example, a material that is transparent to visible light and is selected from materials that can be used for wiring, etc. The third electrode 551(i, j) can be made of any of the following materials.

[0305] Specifically, conductive oxides or conductive oxides containing indium, indium oxide, indium Indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. , can be used for the third electrode 551(i, j). A metal film can be used for the third electrode 551(i, j). A metal film that reflects another part of the light can be used for the third electrode 551(i, j). This allows a microresonator structure to be provided in the second display element 550(i,j). As a result, light of a predetermined wavelength can be extracted more efficiently than other light.

[0306] For example, a material that can be used for wiring or the like can be used for the fourth electrode 552. Specifically, a material that is reflective to visible light can be used for the fourth electrode 552. do.

[0307] <Drive circuit GD> Various sequential circuits such as shift registers can be used for the driving circuit GD. For example, A transistor MD, a capacitor element, etc. can be used in the driver circuit GD. A transistor that can be used for switch SW1 or that is manufactured in the same process as transistor M. A transistor including a semiconductor film that can be formed on the semiconductor layer can be used.

[0308] For example, a transistor having a different configuration from that of the transistor that can be used for the switch SW1 may be used. Specifically, a transistor having a conductive film 524 can be used as a transistor. It can be used for standard MD (see FIG. 12(B)).

[0309] The same structure as that of the transistor M can be used for the transistor MD.

[0310] <Transistor> For example, a semiconductor film that can be formed in the same process can be used as a transistor for a driver circuit and a pixel circuit. It can be used for registers.

[0311] For example, driving bottom-gate transistors or top-gate transistors The transistors can be used for the transistors of the circuit or the transistors of the pixel circuit.

[0312] By the way, for example, a bottom gate transistor using amorphous silicon as a semiconductor The production line for bottom-gate transistors uses oxide semiconductors as the semiconductor. It can be easily modified into a production line. The production line for this is a top-gate transistor production line that uses oxide semiconductors as the semiconductor. Both modifications can be easily made to existing production lines. Cut.

[0313] For example, a transistor using a semiconductor containing a group 14 element for the semiconductor film can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film. Semiconductors such as crystalline silicon, polysilicon, microcrystalline silicon, or amorphous silicon A transistor using a film can be used.

[0314] The temperature required to fabricate a transistor using polysilicon as a semiconductor is This is lower than that of transistors using crystalline silicon.

[0315] In addition, the field effect mobility of transistors that use polysilicon as a semiconductor is This is higher than that of transistors that use silicon as a semiconductor, which improves the aperture ratio of pixels. In addition, the pixels arranged with extremely high resolution, the gate drive circuit and the As a result, the components that make up the electronic device can be easily formed on the same substrate. The number of items can be reduced.

[0316] The reliability of transistors that use polysilicon as a semiconductor is higher than that of transistors that use amorphous silicon as a semiconductor. This is superior to the transistors used in

[0317] Furthermore, a transistor using a compound semiconductor can be used. A semiconductor containing arsenic can be used for the semiconductor film.

[0318] Furthermore, transistors using organic semiconductors can be used. Organic semiconductors including graphene or graphene can be used for the semiconductor film.

[0319] For example, a transistor using an oxide semiconductor for a semiconductor film can be used. The oxide semiconductor includes an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc. A conductor can be used for the semiconductor film.

[0320] For example, the leakage current in the off state is A transistor smaller than that used in the prior art can be used. A transistor using a conductor as a semiconductor film can be used.

[0321] This allows pixel circuits that use transistors that use amorphous silicon as a semiconductor film. In comparison with the above, the time during which the pixel circuit can hold the image signal can be extended. Specifically, the selection signal is set to a frequency of less than 30 Hz, preferably 1 Hz, while suppressing the occurrence of flicker. The frequency can be less than 1 Hz, and more preferably less than once per minute. This reduces fatigue that accumulates in the user of the processing device. can be reduced.

[0322] For example, the semiconductor film 508, the conductive film 504, the conductive film 512A, and the conductive film 512B are included. A transistor can be used as the switch SW1 (see FIG. 13(B)). Film 506 comprises a region sandwiched between semiconductor film 508 and conductive film 504 .

[0323] The conductive film 504 has a region overlapping with the semiconductor film 508. The conductive film 504 functions as a gate electrode. The insulating film 506 functions as a gate insulating film.

[0324] The conductive film 512A and the conductive film 512B are electrically connected to the semiconductor film 508. The conductive film 512A has either a function of a source electrode or a function of a drain electrode, and the conductive film 512B It functions as either a source electrode or a drain electrode.

[0325] In addition, the transistor having the conductive film 524 may be used as a transistor in a driver circuit or a pixel circuit. The conductive film 524 can be formed between the conductive film 504 and a semiconductor film. The insulating film 516 has a region sandwiching the conductive film 524 and the semiconductor film 508. 508. Also, for example, a wiring that supplies the same potential as the conductive film 504 is provided. A conductive film 524 is electrically connected to the wire.

[0326] For example, a 10 nm thick film containing tantalum and nitrogen and a 300 nm thick film containing copper A conductive film in which these are stacked can be used as the conductive film 504. Note that a film containing copper can be used as an insulating film. 506, a region sandwiching a film containing tantalum and nitrogen is provided.

[0327] For example, a 400 nm thick film containing silicon and nitrogen and a 400 nm thick film containing silicon, oxygen, and nitrogen A laminated material of a 200 nm thick film containing the above can be used for the insulating film 506. The film containing silicon and nitrogen has a structure in which silicon, oxygen, and nitrogen are interposed between the semiconductor film 508 and the film containing silicon and nitrogen. The membrane sandwiching region includes:

[0328] For example, a 25 nm thick film containing indium, gallium, and zinc is deposited on the semiconductor film 508. It can be used.

[0329] For example, a 50 nm thick film containing tungsten and a 400 nm thick film containing aluminum are A conductive film in which a film containing titanium and a film having a thickness of 100 nm are stacked in this order is called a conductive film 512. A film containing tungsten can be used as the conductive film 512A or the conductive film 512B. It has an area that contacts the membrane 508 .

[0330] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0331] (Fourth embodiment) In this embodiment, a configuration of an input / output device of one embodiment of the present invention will be described with reference to FIGS. 17 to 20. Explain with reference to the above.

[0332] FIG. 17 is a block diagram illustrating a configuration of an input / output device of one embodiment of the present invention.

[0333] FIG. 18 illustrates a configuration of an input / output panel that can be used in the input / output device of one embodiment of the present invention. 18(A) is a top view of the input / output panel. FIG. 18(B) is a top view of the input / output panel. 18(C) is a schematic diagram illustrating a part of the input section of the input / output device. 7 is a schematic diagram illustrating the configuration of a pixel 702(i,j).

[0334] 19 and 20 show an input / output panel that can be used in the input / output device of one embodiment of the present invention. 19A is a diagram illustrating the configuration of the device shown in FIG. 19(B) is a cross-sectional view taken along the line X5-X6 in FIG. 19(A). FIG. 2 is a cross-sectional view illustrating the configuration.

[0335] FIG. 20 shows cross sections taken along the cutting lines X7-X8, X9-X10, and X11-X12 in FIG. 18(A). Figure.

[0336] <Configuration example 1 of input / output device> The input / output device described in this embodiment has a display unit 230 and an input unit 240 (see FIG. 17). The input / output device includes an input / output panel 700TP.

[0337] The input unit 240 has a detection area 241, and the detection area 241 is connected to the display area 231 of the display unit 230. The detection area 241 is adjacent to the area overlapping with the display area 231. (See Figure 19(A)).

[0338] <Input unit 240> The input section 240 includes a detection region 241, an oscillation circuit OSC, and a detection circuit DC (see FIG. 17 reference).

[0339] The sensing region 241 includes a group of sensing elements 775(g,1) through 775(g,q), and another group of detector elements 775(1,h) to 775(p,h) (see FIG. 1). 7), where g is an integer between 1 and p, h is an integer between 1 and q, and p and and q are integers of 1 or greater.

[0340] A group of sensing elements 775(g,1) to 775(g,q) are , h) and are arranged in the row direction (the direction indicated by the arrow R2 in the figure). The direction indicated by R2 may be the same as the direction indicated by arrow R1 in FIG. 17, or may be different. Good too.

[0341] In addition, another group of detector elements 775(1,h) to 775(p,h) are detector elements 775(g,h) and arranged in the column direction (the direction indicated by arrow C2 in the figure) that intersects with the row direction. will be done.

[0342] A group of detector elements 775(g,1) to 775(g,q) arranged in the row direction are It includes an electrode C(g) that is electrically connected to a control line CL(g) (see FIG. 19(A)).

[0343] Another group of detector elements 775(1,h) to 775(p,h) arranged in the column direction includes an electrode M(h) electrically connected to the detection signal line ML(h).

[0344] <Detection element 775(g,h)> The detection element 775(g, h) is electrically connected to the control line CL(g) and the detection signal line ML(h). Connected.

[0345] The sensing element 775(g,h) is transparent. ) and electrode M(h).

[0346] For example, a conductive film having an opening in the region overlapping with the pixel 702(i, j) is formed as the electrode C(g) and and electrodes M(h). This allows the display of the input / output panel to be displayed without being obstructed. It is possible to detect objects approaching the area overlapping with the input / output panel. As a result, new input / output devices with excellent convenience and reliability can be realized. An apparatus can be provided.

[0347] The electrode C(g) is electrically connected to the control line CL(g).

[0348] The electrode M(h) is electrically connected to the detection signal line ML(h), and the electrode M(h) is connected to the input / output panel. The electric field that is partially blocked by the electrode C(g) and the electrode C(g) in the area overlapping with the panel 700 is Between the electrode C(g) and the electrode M(h), a liquid crystal material is placed. The layer 753 includes a layer 753 .

[0349] The input / output panel 700TP and the input / output panel 3554 shown in the second embodiment (FIG. 4(B)) ) refers to the fact that the liquid crystal display element can be driven using a VA mode driving method.

[0350] The control line CL(g) has a function of supplying a control signal.

[0351] The detection signal line ML(h) has a function of receiving a detection signal.

[0352] The sensing elements 775(g, h) are arranged to detect the distance and proximity of the input / output panel 700 and the area where they overlap. and a function of providing a detection signal that varies based on a control signal.

[0353] This allows the user to display image information using the input / output device while approaching the area that overlaps with the input / output device. As a result, new entrances and exits that are highly convenient and reliable can be realized. A force device can be provided.

[0354] <Oscillator circuit OSC> The oscillator circuit OSC is electrically connected to the control line CL(g) and has the function of supplying a control signal. For example, a square wave, a sawtooth wave, a triangular wave, etc. can be used as the control signal.

[0355] <Detection circuit DC> The detection circuit DC is electrically connected to the detection signal line ML(h) and detects the voltage of the detection signal line ML(h). The detection signal may be, for example, Contains information P1.

[0356] <Display section 230> The input / output device described in Embodiment 2 can be used for the display portion 230.

[0357] <Input / Output Panel 700TP> The input / output panel 700TP is a top-gate type panel having a detection element 775(g, h). The fact that the input / output panel 70 described in the third embodiment has the transistors is, for example, 0. Here, we will explain the differences in detail and consider whether a similar configuration can be used. The above explanation will be used where possible.

[0358] The input / output panel 700TP includes a control line CL(g) and a detection signal line ML(h).

[0359] <Conductive film 511D> The input / output panel 700TP described in this embodiment also includes a conductive film 511D (see FIG. 2). 0).

[0360] A conductive material CP or the like is disposed between the control line CL(g) and the conductive film 511D, and the control line C L(g) and the conductive film 511D can be electrically connected. A conductive material CP or the like is disposed between the detection signal line ML(h) and the conductive film 511D. The membrane 511D can be electrically connected. For example, a material that can be used for wiring or the like can be used for the conductive film 511D.

[0361] <Terminal 519D> The input / output panel 700TP described in this embodiment also has a terminal 519D. The conductive film 519D is electrically connected to the conductive film 511D.

[0362] The terminal 519D includes a conductive film 511D and an intermediate film 754D. It has an area that comes into contact with the conductive film 511D.

[0363] For example, a material that can be used for wiring or the like can be used for the terminal 519D. In this case, the same configuration as that of the terminal 519B or the terminal 519C can be used for the terminal 519D. (See Figure 20).

[0364] For example, the terminal 519D and the flexible printed circuit board F are connected by using the conductive material ACF2. PC2 can be electrically connected. This allows, for example, control to be performed using terminal 519D. A control signal can be provided to control line CL(g) or terminal 519D can be used to detect The signal can be supplied from the sense signal line ML(h).

[0365] <Switch SW1, transistor M, transistor MD> Transistors that can be used for switch SW1, transistor M, and transistor The MD includes a conductive film 504 having an area overlapping the insulating film 501C, and a conductive film 504 having an area overlapping the insulating film 501C and the conductive film 504. and a semiconductor film 508 having a region sandwiched between the conductive film 504. 4 has the function of a gate electrode (see FIG. 19(B)).

[0366] The semiconductor film 508 is divided into a first region 508A that does not overlap with the conductive film 504 and a second region 508B. 8B and a third region overlapping the conductive film 504 between the first region 508A and the second region 508B. and region 508C.

[0367] The transistor MD includes an insulating film 506 between the third region 508C and the conductive film 504. The insulating film 506 functions as a gate insulating film.

[0368] The first region 508A and the second region 508B have a higher resistivity than the third region 508C. The MOS transistor has a low density and functions as a source region or a drain region.

[0369] For example, the oxide semiconductor film is subjected to plasma treatment using a gas containing a rare gas, A first region 508A and a second region 508B can be formed in the semiconductor film 508.

[0370] In addition, for example, the conductive film 504 can be used as a mask. The shape of a portion of 08C can be self-aligned with the shape of the edge of the conductive film 504.

[0371] The transistor MD includes a conductive film 512A in contact with the first region 508A and a conductive film 512B in contact with the second region 508. The conductive film 512A and the conductive film 512B are in contact with the substrate 512B. It functions as a source electrode or a drain electrode.

[0372] For example, a transistor that can be formed in the same process as the transistor MD is called a transistor. Can be used for StaM.

[0373] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0374] (Embodiment 5) In this embodiment, the transistor 3521 included in the input / output panel of one embodiment of the present invention is used as an example. One structure of the transistor will be described with reference to FIGS. Next, a transistor having two gate electrodes will be described.

[0375] 21A is a top view of the transistor 150, and FIG. 21B is a top view of the transistor 150 shown in FIG. 21A. 21(C) is a cross-sectional view taken along the dashed line X1-X2 in FIG. 21(A). FIG.

[0376] The transistor 150 shown in FIGS. 21A, 21B, and 21C includes a conductive film 106 on a substrate 102 and a , the insulating film 104 on the conductive film 106, the oxide semiconductor film 108 on the insulating film 104, and the oxide An insulating film 110 on the semiconductor film 108, a conductive film 112 on the insulating film 110, an insulating film 104, The insulating film 116 is formed over the oxide semiconductor film 108 and the conductive film 112 .

[0377] Note that the oxide semiconductor film 108 has a structure similar to that described in other embodiments. The transistor 150 shown in (A), (B), and (C) includes a conductive film 106, an opening 141a, and a , an opening 141b, and an opening 143. In the opening 141a, the conductive film 12 In the opening 141b, the conductive film 120b is in contact with the oxide conductor film 108n. It contacts the compound conductor film 108n.

[0378] The opening 143 is provided in the insulating films 104 and 110. The conductive film 106 has the opening 143. 43, the conductive film 106 is electrically connected to the conductive film 112. The same potential is applied to the conductive film 106 and the conductive film 12. Alternatively, the opening 143 may not be provided and the conductive film 112 may be provided with a different potential. For example, the conductive film 106 may be formed of a light-shielding material. This can suppress light from below from being irradiated onto the oxide semiconductor film 108.

[0379] In addition, in the case of the transistor 150, the conductive film 106 is a first gate electrode (bottom The conductive film 112 functions as a second gate electrode (also referred to as a top gate electrode). The insulating film 104 functions as a first gate insulating film. The insulating film 110 functions as a second gate insulating film.

[0380] The conductive film 106 is made of the same material as the conductive films 112, 120a, and 120b described above. In particular, the conductive film 106 can be formed of a material containing copper, thereby reducing the resistance. For example, the conductive film 106 may be a titanium nitride film or a titanium nitride film. A copper film is provided on a tungsten film or a copper film. b is a laminated structure in which a copper film is provided on a titanium nitride film, a tantalum nitride film, or a tungsten film; In this case, it is preferable to use the transistor 150 as a pixel transistor of the input / output device and By using it in either one or both of the driving transistors, the conductive film 106 and the conductive film 12 0a, and the parasitic capacitance occurring between the conductive film 106 and the conductive film 120b. Therefore, the conductive film 106, the conductive film 120a, and the conductive film 1 20b as the first gate electrode, source electrode, and drain electrode of the transistor 150. It is not only used for power supply wiring for input / output devices, but also for signal supply wiring or connection wiring. It can also be used for wiring etc.

[0381] As described above, the transistor 150 shown in FIGS. 21A, 21B, and 21C has an oxide semiconductor film 1 The transistor 150 has a structure in which conductive films functioning as gate electrodes are provided above and below the transistor 150. As shown in FIG. 1, a semiconductor device according to one embodiment of the present invention may be provided with a plurality of gate electrodes.

[0382] As shown in FIGS. 21B and 21C, the oxide semiconductor film 108 serves as a first gate electrode. the conductive film 106 functioning as a second gate electrode and the conductive film 112 functioning as a second gate electrode. and is sandwiched between two conductive films that function as gate electrodes.

[0383] The length of the conductive film 112 in the channel width direction is equal to the length of the oxide semiconductor film 108 in the channel width direction. The length of the oxide semiconductor film 108 in the channel width direction is longer than the length of the insulating film 110. The conductive film 112 and the conductive film 106 are sandwiched between the insulating film 112 and the conductive film 106. 04 and the opening 143 formed in the insulating film 110. One of the side surfaces of the conductive film 108 in the channel width direction is connected to the conductive film 112 with the insulating film 110 sandwiched therebetween. They are facing each other.

[0384] In other words, the conductive films 106 and 112 are formed in the openings provided in the insulating films 104 and 110. The region 143 is connected to the oxide semiconductor film 108 and is located outside the side edge of the oxide semiconductor film 108. It has a region.

[0385] With such a structure, the oxide semiconductor film 108 included in the transistor 150 The conductive film 106 functions as a first gate electrode and the conductive film 108 functions as a second gate electrode. The transistor 150 can be electrically surrounded by the electric field of the conductive film 112. The electric field of the first gate electrode and the second gate electrode causes the oxide film to form a channel region. The device structure of the transistor that electrically surrounds the nitride semiconductor film 108 is called the Surround This can be called an ed channel (S-channel) structure.

[0386] Since the transistor 150 has an S-channel structure, the conductive film 106 or the conductive The film 112 effectively applies an electric field to the oxide semiconductor film 108 to induce a channel. This improves the current driving capability of the transistor 150 and provides high on-current characteristics. In addition, since the on-current can be increased, The transistor 150 can be miniaturized. Since the film 108 has a structure surrounded by the conductive film 106 and the conductive film 112, This can increase the mechanical strength of the transistor 150.

[0387] Note that the opening 1 in the oxide semiconductor film 108 in the channel width direction of the transistor 150 An opening different from the opening 143 may be formed on the side where the opening 43 is not formed.

[0388] As shown in the transistor 150, a transistor is provided with a semiconductor film sandwiched therebetween. When a pair of gate electrodes are connected, one gate electrode is connected to a signal A and the other gate electrode is connected to a signal B. A fixed potential Vb may be applied to the electrodes. A signal A may be applied to one gate electrode and a signal B may be applied to the other gate electrode. A signal B may be applied to the gate electrode. A fixed potential Va is applied to one of the gate electrodes. The other gate electrode may be given a fixed potential Vb.

[0389] The signal A is, for example, a signal for controlling the conductive state or the non-conductive state. It is a digital signal that takes on two types of potential: potential V1 or potential V2 (V1>V2). For example, the potential V1 may be set to a high power supply potential, and the potential V2 may be set to a low power supply potential. Signal A may be an analog signal.

[0390] The fixed potential Vb is, for example, a potential for controlling the threshold voltage VthA of a transistor. The fixed potential Vb may be the potential V1 or the potential V2. This is preferable because it is not necessary to provide a separate potential generating circuit for generating Vb. The fixed potential Vb may be a potential different from the potential V1 or the potential V2. As a result, the gate-source voltage V The drain current when gs is 0V is reduced, and the leakage current of the circuit having the transistor is reduced. For example, the fixed potential Vb may be set lower than the low power supply potential. In some cases, the threshold voltage VthA can be lowered by increasing the fixed potential Vb. As a result, the drain current is improved when the gate-source voltage Vgs is at a high power supply potential, For example, the fixed potential Vb can be set to a low voltage. It may be higher than the source potential.

[0391] The signal B is, for example, a signal for controlling the conductive state or the non-conductive state. It is a digital signal that takes on two types of potential: potential V3 or potential V4 (V3>V4). For example, the potential V3 may be set to a high power supply potential, and the potential V4 may be set to a low power supply potential. Signal B may be an analog signal.

[0392] If signal A and signal B are both digital signals, signal B has the same digital value as signal A. In this case, the on-state current of the transistor is improved, and the transistor is effectively In this case, the potential V1 and the potential V2 of the signal A can be increased. The potential V2 may be different from the potentials V3 and V4 in the signal B. For example, The gate insulating film corresponding to the gate to which signal B is input corresponds to the gate to which signal A is input. If the gate insulating film is thicker than the gate insulating film, the potential amplitude of signal B (V3-V4) is V1-V2) to prevent the transistor from turning on or off. The influence of signal A on the conduction state must be equal to the influence of signal B on the conduction state. It may be possible.

[0393] If signal A and signal B are both digital signals, signal B will have a different digital value than signal A. In this case, the transistors can be controlled by signals A and B separately. For example, when a transistor is an n-channel transistor, If the signal is a channel type, then only if signal A is at potential V1 and signal B is at potential V3 When the signal A is at potential V2 and the signal B is at potential V4, When only one transistor is in a non-conducting state, the functions of a NAND circuit, NOR circuit, etc. can be achieved with one transistor. In addition, the signal B is a signal for controlling the threshold voltage VthA. For example, the signal B may be a period during which the circuit having the transistor is operating and a period during which the signal B is The signal B may be a signal whose potential is different from that during the period when the circuit is not operating. In this case, signal B may be a signal with a different potential according to the operation mode. In some cases, the potential may not be switched very frequently.

[0394] If both signal A and signal B are analog signals, signal B is an analog signal with the same potential as signal A. signal, an analog signal obtained by multiplying the potential of signal A by a constant, or by adding a constant to the potential of signal A. In this case, the on-current of the transistor increases. This may improve the operating speed of a circuit that includes a transistor. In this case, the transistors are controlled by signals A and B. This can be done separately, and higher functionality may be achieved.

[0395] Signal A may be a digital signal and signal B may be an analog signal. Signal A may be an analog signal and signal B a digital signal.

[0396] When a fixed potential is applied to both gate electrodes of a transistor, the transistor is treated as a resistor element. For example, if a transistor is an n-channel In the case of a transistor, the fixed potential Va or the fixed potential Vb can be increased (decreased). In some cases, the effective resistance of the resistor can be lowered (raised). By making Vb high (low), the In some cases, an effective resistance lower (higher) than that expected may be obtained.

[0397] Furthermore, an insulating film may be further formed on the transistor 150. The transistor 150 shown in FIG. 1C has an insulating film on the conductive films 120a and 120b and the insulating film 118. It has a velum 122.

[0398] The insulating film 122 has a function of planarizing unevenness due to transistors and the like. The material 122 may be an insulating material and may be made of an inorganic or organic material. Inorganic materials include silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, and silicon nitride films. Examples of the organic material include silicon film, aluminum oxide film, and aluminum nitride film. Examples of the material include photosensitive resin materials such as acrylic resin and polyimide resin.

[0399] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0400] (Embodiment 6) In this embodiment, an electronic device including an input / output device of one embodiment of the present invention will be described with reference to FIG. Explanations will be given.

[0401] 22(A) to 22(G) are diagrams showing electronic devices. These electronic devices are 5000, display unit 5001, speaker 5003, LED lamp 5004, operation key 500 5 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 ( , displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, Sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or one that includes a function for measuring infrared rays), a microphone 5008, etc. It can also be used with keyboards, hardware buttons, pointing devices, touch sensors, Equipped with one or more of an illuminance sensor, an imaging device, a voice input device, a viewpoint input device, and a posture detection device. It is possible.

[0402] FIG. 22(A) shows a mobile computer, which includes, in addition to the above components, a switch 5009, It may have an infrared port 5010, etc. FIG. 22(B) shows a portable device equipped with a recording medium. A type of image reproducing device (for example, a DVD reproducing device), which, in addition to the above, also has a second display 22(C) shows a GOG In addition to the above, the display includes a second display unit 5002, a support unit 5012, The game machine may have earphones 5013, etc. FIG. 22(D) shows a portable game machine. In addition to the above, it may have a recording medium reading unit 5011, etc. It is a digital camera with a TV receiving function, and in addition to the above, it has an antenna 5014, a shutter The mobile phone may have a trigger button 5015, an image receiving unit 5016, etc. In addition to the above, it is a type gaming machine that includes a second display unit 5002, a recording medium reading unit 5011, FIG. 22(G) shows a portable television receiver, which can be used with the above-mentioned In addition, it may have a charger 5017 capable of transmitting and receiving signals, etc.

[0403] The electronic devices shown in Figures 22(A) to 22(G) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (program The function of controlling processing by the program, wireless communication function, and various computer Functions for connecting to computer networks, and for transmitting or receiving various data using wireless communication functions. The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. Furthermore, in an electronic device having a plurality of display units, One display unit mainly displays image information, and the other display unit mainly displays text information. The function to display images that take into account parallax on multiple displays to create a three-dimensional image. Furthermore, in electronic devices having an image receiving unit, It has the functions of taking still images, taking videos, and correcting the captured images automatically or manually. function to save the captured images to a recording medium (external or built-in to the camera); The display device can have a function of displaying an image on a display unit, etc. The functions that the electronic device shown in (G) can have are not limited to these, and it can have various functions. It is possible.

[0404] FIG. 22(H) shows a smart watch, which includes a housing 7302, an input / output panel 7304, an operation panel 7306, and a touch panel 7308. Buttons 7311, 7312, connection terminals 7313, bands 7321, clasps 7322, etc. Has.

[0405] The input / output panel 7304 mounted on the housing 7302, which also serves as a bezel, is a non-rectangular display panel. The input / output panel 7304 may have a rectangular display area. The input / output panel 7304 has an icon 7305 representing the time, other icons 7306 etc. can be displayed.

[0406] The smartwatch shown in FIG. 22(H) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (program It has the functions of controlling processing by RAM, wireless communication functions, and various computers using wireless communication functions. Functions for connecting to computer networks, sending or receiving various data using wireless communication functions The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. It may have the function of:

[0407] In addition, a speaker, a sensor (force, displacement, position, velocity, acceleration, angular velocity) Degrees, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, electricity Includes functions to measure pressure, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared. The smartwatch may have a light-emitting element, a microphone, etc. It can be manufactured by using it in the input / output panel 7304.

[0408] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0409] For example, in this specification, when it is explicitly stated that X and Y are connected, In this case, X and Y are electrically connected, and X and Y are functionally connected. The case where X and Y are directly connected is also considered to be disclosed in this specification. Therefore, the present invention is not limited to the predetermined connection relationships, for example, the connection relationships shown in the drawings or text. Connections other than those shown in the drawings or text are also treated as if they were described in the drawings or text. do.

[0410] Here, X and Y are the object (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.). , etc.).

[0411] An example of a direct connection between X and Y is a circuit that allows electrical connection between X and Y. The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, When no external device (such as a diode, display element, light-emitting element, or load) is connected between X and Y, The elements that allow electrical connection between X and Y (e.g., switches, transistors, capacitors) elements, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc.) , X and Y are connected.

[0412] An example of an electrical connection between X and Y is The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more devices (such as diodes, display elements, light-emitting elements, and loads) can be connected between X and Y. It is possible. The switch has a function to control on / off. A switch can be in a conducting state (ON state) or a non-conducting state (OFF state), allowing current to flow. The switch has the function of controlling whether or not the current flows. When X and Y are electrically connected, This includes the case where Y is directly connected.

[0413] An example of a functional connection between X and Y is a function that allows the functional connection between X and Y. Circuits that perform the above functions (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (voltage power supply circuits (voltage boost circuits, voltage drop circuits, etc.), level shifter circuits that change the signal potential level, etc.) , voltage source, current source, switching circuit, amplifier circuit (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more circuits (e.g., memory circuits, control circuits, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from X If X is transmitted to Y, then X and Y are considered to be functionally connected. When X and Y are functionally connected, there is a direct connection between X and Y and a direct connection between X and Y. This also includes the case where the and are electrically connected.

[0414] In addition, if it is explicitly stated that X and Y are electrically connected, are electrically connected (i.e., there is another element or circuit between X and Y) X and Y are functionally connected (i.e., X and Y are functionally connected) and (When there is a functional connection between them via another circuit) and when X and Y are directly connected (i.e., when X and Y are connected without any other element or circuit between them) is considered to be disclosed in the present specification. If it is explicitly stated that it is connected, The same content is considered to be disclosed in the present specification.

[0415] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or (not shown), electrically connected to X, and the drain (or second terminal, etc.) of the transistor is connected to Z 2 (or not), and is electrically connected to Y, or the source of the transistor (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. The drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2. and another part of Z2 is directly connected to Y, It is possible to do so.

[0416] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor" The terminals of the transistor (or the first terminal) are electrically connected to each other. 1 terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y. It can be expressed as "connected to the source (or the first The first terminal of the transistor is electrically connected to X, and the drain of the transistor is electrically connected to the second terminal of the transistor. The transistor source (or first terminal, etc.) is electrically connected to Y, and the transistor source (or first terminal, etc.) is electrically connected to X. The drain (or second terminal, etc.) of the transistor, Y, is electrically connected in this order. " Alternatively, "X is the source (or first terminal, etc.) of the transistor. and the drain (or second terminal, etc.) are electrically connected to Y, and X, the source (or first terminal, etc.) of a transistor, the drain (or second terminal, etc.) of a transistor ), Y is provided in this order of connection. By specifying the order of connections in the circuit configuration using a simple expression method, Distinguish between the source (or first terminal, etc.) and the drain (or second terminal, etc.) of a transistor. The technical scope can be determined by the above.

[0417] Alternatively, for example, "the source (or first terminal, etc.) of a transistor" is electrically connected to X through at least a first connection path, and the first connection path is , and the second connection path is a transistor through a transistor. The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor The first connection path is a path via Z1, and the second connection path is a path between the first and second transistors. The drain (or second terminal, etc.) of the capacitor is electrically connected to Y through at least a third connection path. the third connection path does not have the second connection path, and the third connection path The connection path is the path via Z2. The source (or first terminal, etc.) of the resistor is connected to the resistor via Z1 by at least the first connection path. and electrically connected to X, and the first connection path does not have a second connection path; The second connection path has a connection path through a transistor, and (or the second terminal, etc.) is connected to Y via Z2 by at least a third connection path. The third connection path does not have the second connection path. Alternatively, the source (or first terminal, etc.) of the transistor may be at least The first electrical path is electrically connected to X through Z1. The primary path does not have a second electrical path, and the second electrical path is a From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor The drain (or second terminal, etc.) of the transistor is connected to at least a third The third electrical path is electrically connected to Y through Z2. , does not have a fourth electrical path, and the fourth electrical path is (or second terminal, etc.) to the source (or first terminal, etc.) of the transistor. Using the same expression as these examples, the circuit configuration By defining the connection path in Distinguishing between the first terminal (or the second terminal, etc.) and the drain (or the second terminal, etc.) to determine the technical scope. can be done.

[0418] These representation methods are merely examples, and the present invention is not limited to these representation methods. , Y, Z1, Z2 are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layer, etc.).

[0419] In addition, the circuit diagram shows independent components as if they are electrically connected to each other. Even if the components are different, one component may have the functions of multiple components. For example, when a part of the wiring also functions as an electrode, one conductive film functions as both the wiring and the electrode. Therefore, the electrode in this specification has the functions of both components. The term "electromagnetic connection" refers to a case where one conductive film has the functions of multiple components. This also falls within the scope of the above. [Explanation of symbols]

[0420] AF1 alignment film AF2 alignment film C1 Arrow C2 Arrow R1 Arrow R2 Arrow C(g) electrode CSCOM Wiring M(h) electrode KB1 structure M transistor MD transistor SW1 switch SW2 switch VCOM1 wiring 104 insulating film 108 Oxide semiconductor film 108n oxide conductor film 110 insulating film 116 Insulating film 118 insulating film 122 insulating film 150 transistors 230 Display section 501A Insulating film 501C insulating film 506 Insulating film 516 Insulating film 518 Insulating film 521 Insulating film 528 Insulating film 551 Electrode 552 Electrode 553 Layer containing luminescent material 700 Input / Output Panel 700B Input / Output Panel 700TP Input / Output Panel 751 Electrode 752 Electrode 753 Layer containing liquid crystal material 771 Insulating Film 3510 Wiring 3511 Wiring 3521 Transistor 3522 Electrode 3523 Electrode 3523A Electrode 3523B Electrode 3524 Layer containing liquid crystal material 3525 Color Filter 3526 Wiring 3527 Sensor electrode 3528 Sub-sensor electrode 3529 In-cell sensor electrode 3531 Case 3532 Input / Output Panel 3535 Wiring 3536 Wiring 3551 Input / Output Panel 3552 Input / Output Panel 3553 Input / Output Panel 3554 Input / Output Panel 3555 Input / Output Panel 3556 Input / Output Panel 3557A Input / Output Panel 3557B Input / Output Panel 3557C Input / Output Panel 3558A Input / Output Panel 3558B Input / Output Panel 3559 Input / Output Panel 3560 Input / Output Panel 3561 Orientation film 3562 Alignment film 3571 Electrode 3572 Electrode 3573 Layer containing luminescent material 3574 Semiconductor layer 3575 Insulating film 3581 Arrow 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support part 5013 Earphones 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 7302 Housing 7304 Input / Output Panel 7305 Icon 7306 Icons 7311 Operation button 7312 Operation button 7313 Connection terminal 7321 Band 7322 Clasp

Claims

[Claim 1] a first sensor electrode; a second sensor electrode; a layer including a liquid crystal material; A substrate; a first electrode; a second electrode; and a detection circuit; the layer containing the liquid crystal material has an area overlapping the first sensor electrode; the substrate includes an area sandwiched between the first sensor electrode and the layer containing the liquid crystal material; the second sensor electrode has a region sandwiching the layer containing the liquid crystal material between the second sensor electrode and the substrate; the second sensor electrode is disposed to form a capacitance between the second sensor electrode and the first sensor electrode; the first electrode has a region sandwiching the layer containing the liquid crystal material between the first electrode and the substrate; the first electrode comprises the same material as the second sensor electrode; the layer containing a liquid crystal material contains a liquid crystal material, the second electrode is disposed so as to be capable of applying an electric field between the second electrode and the first electrode to control the alignment of the liquid crystal material; The input / output device, wherein the detection circuit is capable of detecting the change in capacitance.

Images