Joint system
The bonding system for semiconductor devices addresses the issue of large footprint by utilizing intermolecular forces and controlled atmospheric conditions to minimize space, achieving efficient and compact substrate processing.
Patent Information
- Application Number
- JP2025157806
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2020-04-13
- Filing Date
- 2025-09-24
- Publication Date
- 2025-12-09
AI Technical Summary
Existing bonding systems for semiconductor devices occupy a large footprint in clean rooms, necessitating a reduction in space utilization.
A bonding system that forms laminated substrates using intermolecular forces, incorporating a load/unload block, processing block, and transfer devices operating in atmospheric and reduced pressure atmospheres, with a load lock chamber capable of switching between these environments, to minimize system size.
Achieves a compact footprint by optimizing substrate handling and processing within a reduced space, enhancing efficiency and reducing the physical space required in clean room environments.
Smart Images

Figure 2025179250000001_ABST
Abstract
Description
[Technical Field]
[0001] The present disclosure relates to joint systems. [Background technology]
[0002] To meet the demand for higher integration of semiconductor devices, it has been proposed to use three-dimensional integration technology to stack semiconductor devices in three dimensions. One example of a system using this three-dimensional integration technology is a bonding technology for bonding substrates such as semiconductor wafers together.
[0003] One known bonding technique is to directly bond substrates together by chemical bonding without using adhesives or other materials. A bonding system using this technique includes a surface modification device that modifies the bonding surfaces of the first and second substrates, a hydrophilization device that hydrophilizes the modified bonding surfaces of the first and second substrates, and a bonding device that bonds the hydrophilized first and second substrates together. The bonding system also includes multiple substrate transport devices that transport the first and second substrates between these devices. [Prior art documents] [Patent documents]
[0004] [Patent Document 1] Japanese Patent Application Publication No. 2018-10921 Summary of the Invention [Problem to be solved by the invention]
[0005] An object of the present disclosure is to provide a bonding system that can reduce the footprint, which is the proportion of the floor area of a clean room or the like that the bonding system occupies. [Means for solving the problem]
[0006] A bonding system according to one embodiment of the present disclosure forms a laminated substrate by bonding a first substrate and a second substrate using intermolecular forces, and includes a load / unload block, a processing block, a first transfer device, a second transfer device, a third transfer device, and a load lock chamber. The load / unload block has a mounting table on which a cassette is placed. The processing block includes a surface modification device that modifies the surfaces of the first and second substrates to be bonded in a reduced pressure atmosphere, and a surface hydrophilization device that hydrophilizes the modified surfaces of the first and second substrates and cleans the surfaces to be bonded. The first and second transfer devices transport the first and second substrates in an atmospheric pressure atmosphere. The third transfer device transports the first and second substrates in a reduced pressure atmosphere. The load lock chamber has a first storage unit and a second storage unit that can store the first and second substrates, and the first and second storage units can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere. The first transfer device is disposed in the carry-in / out block and transfers the first and second substrates from the cassette to the first housing unit. The third transfer device is disposed in the processing block and transfers the first and second substrates from the first housing unit to the surface modification device. The second transfer device is disposed in the processing block and transfers the first and second substrates from the second housing unit to the surface hydrophilization device. [Effects of the Invention]
[0007] According to the present disclosure, a small footprint can be achieved. [Brief explanation of the drawings]
[0008] [Figure 1] FIG. 1 is a schematic plan view showing the configuration of a bonding system according to an embodiment. [Figure 2] FIG. 2 is a schematic plan view showing the configuration of the bonding system according to the embodiment. [Figure 3] FIG. 3 is a layout diagram of the bonding system according to the embodiment. [Figure 4] FIG. 4 is a schematic side view of the first substrate and the second substrate. [Figure 5]FIG. 5 is a diagram showing the configuration of a joining device according to an embodiment. [Figure 6] FIG. 6 is a plan view of the load lock chamber according to the embodiment. [Figure 7] FIG. 7 is a side view of the load lock chamber according to the embodiment, seen from the access direction of the first transfer device. [Figure 8] FIG. 8 is a side view of the load lock chamber according to the embodiment, seen from the access direction of the second transfer device. [Figure 9] FIG. 9 is a side view of the load lock chamber according to the embodiment, seen from the access direction of the third transfer device. [Figure 10] FIG. 10 is a flowchart showing the procedure for transporting the first substrate, the second substrate, and the superimposed substrate in the bonding system according to the embodiment. [Figure 11] FIG. 11 is a diagram showing an example of the arrangement of the inspection device. [Figure 12] FIG. 12 is a diagram showing an example of the arrangement of the inspection device. [Figure 13] FIG. 13 is a diagram showing an example of the arrangement of the inspection device. [Figure 14] FIG. 14 is a schematic plan view showing the configuration of a joint system according to a second modified example. DETAILED DESCRIPTION OF THE INVENTION
[0009] Hereinafter, a mode for carrying out a bonding system according to the present disclosure (hereinafter referred to as an "embodiment") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to this embodiment. Furthermore, each embodiment can be appropriately combined within the scope of not causing any contradiction in the processing content. Furthermore, the same components in each of the following embodiments will be given the same reference numerals, and duplicated explanations will be omitted.
[0010] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.
[0011] In addition, for ease of understanding, the drawings referred to below may show an orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, with the positive Z-axis direction being the vertically upward direction. Also, the direction of rotation around the vertical axis may be referred to as the θ direction.
[0012] <1. Configuration of the joining system> First, the configuration of a bonding system according to an embodiment will be described with reference to Figures 1 to 3. Figures 1 and 2 are schematic plan views showing the configuration of a bonding system according to an embodiment.
[0013] The bonding system according to the embodiment has a two-layer structure, roughly divided into an upper layer and a lower layer, with Fig. 1 mainly showing the configuration of the lower layer and Fig. 2 mainly showing the configuration of the upper layer. Fig. 3 is a layout diagram of the bonding system according to the embodiment. Fig. 4 is a schematic side view of the first substrate and the second substrate.
[0014] The bonding system 1 according to this embodiment shown in FIGS. 1 to 3 forms a laminated substrate T by bonding a first substrate W1 and a second substrate W2 together (see FIG. 4).
[0015] The first substrate W1 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer on which multiple electronic circuits are formed. The second substrate W2 is a bare wafer on which no electronic circuits are formed. The first substrate W1 and the second substrate W2 have approximately the same diameter.
[0016] An electronic circuit may be formed on the second substrate W2. The compound semiconductor wafer may be, for example, a wafer containing gallium arsenide, silicon carbide, gallium nitride, or indium phosphide, but is not limited to these.
[0017] 1, the bonding system 1 includes a load / unload block 2 and a processing block 3. The processing block 3 includes a first processing block 3a and a second processing block 3b.
[0018] The load-in / out block 2, first processing block 3a, and second processing block 3b are arranged in the positive direction of the X-axis in the order load-in / out block 2, first processing block 3a, and second processing block 3b, and are connected together.
[0019] (About loading and unloading blocks) The carry-in / out block 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11a-11d. Cassettes C1-C4, each capable of holding a plurality of substrates (for example, 25 substrates) in a horizontal position, are placed on the mounting plates 11a-11d. Cassette C1 is a cassette that holds a first substrate W1, cassette C2 is a cassette that holds a second substrate W2, and cassette C3 is a cassette that holds a superimposed substrate T. Cassette C4 is a cassette for recovering a substrate that has become defective, for example.
[0020] In the cassettes C1 and C2, the first substrate W1 and the second substrate W2 are housed in the same orientation with their bonding surfaces facing upward.
[0021] The transfer area 20 is disposed adjacent to the mounting table 10 on the positive side of the X-axis. The transfer area 20 is provided with a transfer path 21 extending in the Y-axis direction and a first transfer device 22 that is movable along the transfer path 21. The first transfer device 22 has a transfer arm that is movable, for example, vertically, horizontally, and about the vertical axis. The first transfer device 22 uses the transfer arm to transfer the first substrate W1, the second substrate W2, and the overlapped substrate T between the cassettes C1 to C3 placed on the mounting plates 11a to 11c and the first processing block 3a.
[0022] Specifically, the first transfer device 22 takes out the first substrate W1 from the cassette C1 and transfers it to the first processing block 3a. The first transfer device 22 also takes out the second substrate W2 from the cassette C2 and transfers it to the first processing block 3a. The first transfer device 22 also receives the laminated substrate T from the first processing block 3a and stores it in the cassette C3.
[0023] As shown in FIG. 3, in the drawings, the mounting plates 11a to 11d may be referred to as "FUST" and the first transfer device 22 may be referred to as "CRA."
[0024] (About processing blocks) The processing blocks 3 (first processing block 3a and second processing block 3b) include a transfer area 3c extending along the X-axis direction and two processing areas 3d and 3e arranged on either side of the transfer area 3c. Processing area 3d is arranged on the positive side of the Y-axis from the transfer area 3c, and processing area 3e is arranged on the negative side of the Y-axis from the transfer area 3c. The processing blocks 3 have a two-layer structure consisting of a lower layer and an upper layer, which will be described later.
[0025] (Regarding the first processing block) The first processing block 3a is adjacent to the transfer area 20 of the load-out block 2. A first stacking unit 31, a second transfer device 32, and a second stacking unit 33 are arranged in the transfer area 3c of the first processing block 3a. The first stacking unit 31, the second transfer device 32, and the second stacking unit 33 are arranged in this order along the positive direction of the X-axis.
[0026] Specifically, the first stacking unit 31 is disposed between the transfer area 20 of the load-out block 2 and the second transfer device 32. The second stacking unit 33 is disposed between the second transfer device 32 and the transfer area 3c of the second processing block 3b. The second transfer device 32 is disposed between the first stacking unit 31 and the second stacking unit 33.
[0027] A plurality of modules are stacked in the Z-axis direction in the first stacking unit 31 and the second stacking unit 33. For example, as shown in Fig. 3, the first stacking unit 31 has a reading unit 31a, a first temporary placement unit 31b, two first delivery units 31c, and two load-lock chambers 31d stacked thereon.
[0028] The reading unit 31a, the first temporary placement unit 31b, the two first delivery units 31c, and the two load lock chambers 31d are stacked, for example, from the bottom up in the order of the reading unit 31a, the first temporary placement unit 31b, the two first delivery units 31c, and the two load lock chambers 31d.
[0029] The reading unit 31a is a module that reads the identification information attached to the first substrate W1 and the second substrate W2.
[0030] The first temporary rest section 31b is a place where the first substrate W1 and the second substrate W2 are temporarily placed. For example, if the position of the first substrate W1 or the second substrate W2 held by the second transfer device 32 is deviated from the reference position, the second transfer device 32 can correct the positional deviation of the substrate by temporarily placing the substrate on the first temporary rest section 31b and then picking it up again.
[0031] The first transfer section 31c is a place where the laminated substrate T is placed. Specifically, the laminated substrate T is transferred from the second transfer device 32 to the first transfer device 22 at the first transfer section 31c.
[0032] The load lock chamber 31d has a storage section capable of storing the first substrate W1 and the second substrate W2. The storage section of the load lock chamber 31d is connected to a suction device such as a vacuum pump via a suction pipe, and the storage section can be switched between a normal pressure atmosphere and a reduced pressure atmosphere by the suction device.
[0033] In this embodiment, the two load lock chambers 31d are not stacked on top of each other, but are arranged side by side in the horizontal direction (Y-axis direction) (see FIG. 1). The specific configuration of the load lock chamber 31d will be described later.
[0034] In the drawings, the reading unit 31a may be referred to as "WID", the first temporary placement unit 31b as "THS", the first delivery unit 31c as "TRS", and the load lock chamber 31d as "LLS".
[0035] In the second stacking section 33, for example, a second temporary placement section 33a, a second delivery section 33b, a third delivery section 33c, a second alignment section 33d, and a first alignment section 33e are stacked.
[0036] The second temporary rest section 33a is a place where the first substrate W1 and the second substrate W2 are temporarily placed, similar to the first temporary rest section 31b arranged in the first stacking section 31. The second delivery section 33b is a place where the superposed substrate T is placed. Specifically, the delivery of the superposed substrate T from the fourth transfer device 37 (described later) to the second transfer device 32 is performed in the second delivery section 33b. The third delivery section 33c is a delivery section having a reversing mechanism. The third delivery section 33c, for example, reverses the first substrate W1 that was not joined by the joining device 39 (described later).
[0037] The second alignment unit 33d is a module that performs alignment processing on the second substrate W2. For example, the second alignment unit 33d includes a holder that suction-holds and rotates the second substrate W2, and a detector that detects the position of the notch portion of the second substrate W2. The second alignment unit 33d detects the position of the notch portion of the second substrate W2 using the detector while rotating the second substrate W2 that is suction-held by the holder, thereby adjusting the position of the notch portion and thereby adjusting the horizontal orientation of the second substrate W2.
[0038] The first alignment unit 33e is a module that performs alignment processing on the first substrate W1. For example, in addition to the configuration of the second alignment unit 33d described above, it includes an inversion mechanism that inverts the first substrate W1 held by the holder. The first alignment unit 33e can adjust the horizontal orientation of the first substrate W1 and can also invert the first substrate W1.
[0039] In the drawings, the second temporary placement section 33a may be referred to as "THS", the second delivery section 33b as "TRS", the third delivery section 33c as "RTRS", the second alignment section 33d as "NAM", and the first alignment section 33e as "RNAM".
[0040] The second transfer device 32 has a transfer arm that is movable, for example, vertically, horizontally, and around a vertical axis. The second transfer device 32 uses the transfer arm to transfer the first substrate W1, the second substrate W2, and the laminated substrate T between the first lamination unit 31, the second lamination unit 33, and a surface hydrophilization device 36, which will be described later.
[0041] In the processing areas 3d and 3e of the first processing block 3a, a third transfer device 34, a surface modification device 35, and a plurality of (here, two) surface hydrophilization devices 36 are arranged, respectively.
[0042] The third transfer device 34 and the surface modification device 35 are arranged in the order of the third transfer device 34 and the surface modification device 35 along the positive direction of the X-axis. Furthermore, the two surface hydrophilization devices 36 are stacked on top of each other and arranged so as to straddle the upper parts of the third transfer device 34 (specifically, the transfer chamber 34a) and the surface modification device 35 (see FIG. 3). Note that the surface hydrophilization device 36 may also be arranged below the third transfer device 34 (specifically, the transfer chamber 34a) and the surface modification device 35.
[0043] As described above, in the embodiment, the surface hydrophilization device 36 is disposed above or below the third transfer device 34 (transfer chamber 34a) and the surface modification device 35. This allows, for example, suction devices and suction pipes connected to the transfer chamber 34a and the surface modification device 35 to be arranged together, thereby making it possible to miniaturize the entire system.
[0044] The third transfer device 34 is disposed in a transfer chamber 34a whose interior can be sealed. The third transfer device 34 has a transfer arm that is movable, for example, vertically, horizontally, and about a vertical axis. The third transfer device 34 uses the transfer arm to transfer the first substrate W1 and the second substrate W2 between the load lock chamber 31d and the surface modification device 35.
[0045] The transfer chamber 34a is adjacent to the load lock chamber 31d and also adjacent to the surface modification device 35. A suction device such as a vacuum pump is connected to the transfer chamber 34a via a suction pipe. When the suction device is activated, the pressure inside the transfer chamber 34a is reduced to create a reduced pressure atmosphere.
[0046] The transfer chamber 34a is constantly maintained in a reduced pressure atmosphere by a suction device. In this manner, the third transfer device 34 transfers the first substrate W1 and the second substrate W2 in a reduced pressure atmosphere. On the other hand, the first transfer device 22 and the second transfer device 32 described above transfer the first substrate W1 and the second substrate W2 in a normal pressure atmosphere.
[0047] Note that normal pressure is, for example, atmospheric pressure, but does not have to be exactly the same as atmospheric pressure, and may include a pressure range of, for example, ±10 kPa relative to atmospheric pressure.
[0048] The surface modification device 35 is connected to the transfer chamber 34a via a gate valve 105. A suction device such as a vacuum pump is connected to the surface modification device 35 via a suction pipe. When the suction device is activated, the interior of the surface modification device 35 is depressurized to create a reduced pressure atmosphere. Similar to the transfer chamber 34a, the surface modification device 35 is also constantly in a reduced pressure atmosphere.
[0049] The surface modification device 35 modifies the bonding surfaces of the first substrate W1 and the second substrate W2 in a reduced pressure atmosphere. Specifically, the surface modification device 35 breaks the SiO2 bonds at the bonding surfaces of the first substrate W1 and the second substrate W2 to form single-bonded SiO, thereby modifying the bonding surfaces so that they are more easily hydrophilized thereafter.
[0050] In the surface modification device 35, oxygen gas, which is a processing gas, is excited to plasma and ionized in a reduced pressure atmosphere. The oxygen ions are then irradiated onto the bonding surfaces of the first substrate W1 and the second substrate W2, whereby the bonding surfaces are plasma-processed and modified.
[0051] The surface hydrophilization device 36 hydrophilizes the bonding surfaces of the first substrate W1 and the second substrate W2 using a hydrophilization treatment liquid such as deionized water, and also cleans the bonding surfaces. In the surface hydrophilization device 36, deionized water is supplied onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by a spin chuck, for example. As a result, the deionized water supplied onto the first substrate W1 or the second substrate W2 spreads over the bonding surfaces of the first substrate W1 or the second substrate W2, hydrophilizing the bonding surfaces.
[0052] In the drawings, the second conveying device 32 may be referred to as "PRA", the third conveying device 34 as "VSRA", the surface modification device 35 as "SAP", and the surface hydrophilization device 36 as "SCR".
[0053] (Regarding the second processing block) The second processing block 3b is adjacent to the second stacking unit 33 of the first processing block 3a. A fourth transfer device 37, a third temporary placement unit 38a, and a fourth temporary placement unit 38b are arranged in the transfer area 3c of the second processing block 3b.
[0054] The fourth transport device 37 is disposed between the second stacking unit 33 of the first processing block 3a and the third temporary resting unit 38a and the fourth temporary resting unit 38b. The third temporary resting unit 38a and the fourth temporary resting unit 38b are stacked in this order from the bottom up, namely the fourth temporary resting unit 38b and the third temporary resting unit 38a.
[0055] The fourth transfer device 37 is movable along a transfer path (not shown) extending in the X-axis direction. The fourth transfer device 37 has a transfer arm that is movable, for example, vertically, horizontally, and around the vertical axis. The fourth transfer device 37 uses the transfer arm to transfer the first substrate W1, the second substrate W2, and the overlapped substrate T between the second laminating unit 33, the third temporary placement unit 38a, the fourth temporary placement unit 38b, the first temperature control plate 39a, the second temperature control plate 39b (described later), and the bonding device 40.
[0056] The third temporary rest section 38a is a place where the first substrate W1 is temporarily placed in order to correct its position. Similarly, the fourth temporary rest section 38b is a place where the second substrate W2 is temporarily placed in order to correct its position.
[0057] In the drawings, the third temporary placement section 38a may be referred to as "UTHS" and the fourth temporary placement section 38b may be referred to as "LTHS."
[0058] In the processing areas 3d and 3e of the second processing block 3b, a first temperature adjustment plate 39a, a second temperature adjustment plate 39b, and a bonding device 40 are arranged, respectively.
[0059] The first temperature adjustment plate 39a and the second temperature adjustment plate 39b are stacked in this order from the bottom up, namely, the second temperature adjustment plate 39b and the first temperature adjustment plate 39a.
[0060] The first temperature adjustment plate 39a adjusts the temperature of the first substrate W1 to a predetermined temperature, and the second temperature adjustment plate 39b adjusts the temperature of the second substrate W2 to a predetermined temperature.
[0061] In the drawings, the first temperature adjustment plate 39a may be referred to as "UCPL" and the second temperature adjustment plate 39b may be referred to as "ICPL."
[0062] The bonding apparatus 40 produces a laminated substrate T by bonding the hydrophilized first substrate W1 and second substrate W2 together using intermolecular forces.
[0063] Here, a configuration example of the joining device 40 will be described with reference to Fig. 5. Fig. 5 is a diagram showing the configuration of the joining device 40 according to the embodiment.
[0064] As shown in FIG. 5, the joining device 40 includes a first holding part 140, a second holding part 141, and a striker 190.
[0065] The first holding unit 140 has a main body 170. The main body 170 is supported by a support member 180. A through-hole 176 is formed in the support member 180 and the main body 170, passing through the support member 180 and the main body 170 in the vertical direction. The position of the through-hole 176 corresponds to the center of the first substrate W1 that is held by suction on the first holding unit 140. A pressing pin 191 of a striker 190 is inserted into the through-hole 176.
[0066] The striker 190 is disposed on the upper surface of the support member 180, and includes a pressing pin 191, an actuator unit 192, and a linear motion mechanism 193. The pressing pin 191 is a cylindrical member that extends vertically, and is supported by the actuator unit 192.
[0067] The actuator unit 192 generates a constant pressure in a certain direction (vertically downward in this case) using air supplied from, for example, an electropneumatic regulator (not shown). The actuator unit 192 contacts the center of the first substrate W1 using the air supplied from the electropneumatic regulator, and is able to control the pressure load applied to the center of the first substrate W1. In addition, the tip of the actuator unit 192 is movable up and down in the vertical direction by passing through the through-hole 176 using the air from the electropneumatic regulator.
[0068] The actuator section 192 is supported by a linear motion mechanism 193. The linear motion mechanism 193 moves the actuator section 192 in the vertical direction by means of a drive section incorporating a motor, for example.
[0069] The striker 190 controls the movement of the actuator part 192 by the linear motion mechanism 193, and the actuator part 192 controls the pressing load on the first substrate W1 by the pressing pin 191. As a result, the striker 190 presses the center of the first substrate W1, which is sucked and held by the first holding part 140, to bring it into contact with the second substrate W2.
[0070] A plurality of pins 171 that come into contact with the upper surface (non-bonding surface) of the first substrate W1 are provided on the lower surface of the main body 170. The pins 171 each have a diameter of, for example, 0.1 mm to 1 mm and a height of several tens of μm to several hundreds of μm. The pins 171 are evenly spaced, for example, at intervals of 2 mm.
[0071] The first holding unit 140 has a plurality of suction portions that suction the first substrate W1 in a portion of the region where the plurality of pins 171 are provided. Specifically, the lower surface of the main body 170 of the first holding unit 140 is provided with a plurality of outer suction portions 301 and a plurality of inner suction portions 302 that suction the first substrate W1 by vacuuming. The plurality of outer suction portions 301 and the plurality of inner suction portions 302 have suction regions that are arc-shaped in plan view. The plurality of outer suction portions 301 and the plurality of inner suction portions 302 have the same height as the pins 171.
[0072] The plurality of outer suction portions 301 are arranged on the outer periphery of the main body portion 170. The plurality of outer suction portions 301 are connected to a suction device (not shown) such as a vacuum pump, and suck the outer periphery of the first substrate W1 by vacuuming.
[0073] The multiple inner suction portions 302 are arranged side by side along the circumferential direction, radially inward of the main body portion 170 from the multiple outer suction portions 301. The multiple inner suction portions 302 are connected to a suction device (not shown), such as a vacuum pump, and suck the area between the outer periphery and the center of the first substrate W1 by vacuuming.
[0074] The second holding part 141 will now be described. The second holding part 141 has a main body part 200 having a diameter equal to or larger than that of the second substrate W2. Here, the second holding part 141 having a diameter larger than that of the second substrate W2 is shown. The upper surface of the main body part 200 is an opposing surface that faces the lower surface (non-bonding surface) of the second substrate W2.
[0075] A plurality of pins 201 are provided on the upper surface of the main body 200, which contact the lower surface (non-bonding surface) of the second substrate W2. The pins 201 have a diameter of, for example, 0.1 mm to 1 mm, and a height of several tens of μm to several hundreds of μm. The pins 201 are evenly spaced, for example, at intervals of 2 mm.
[0076] Furthermore, a lower rib 202 is provided in an annular shape on the upper surface of the main body 200, outside the plurality of pins 201. The lower rib 202 is formed in an annular shape, and supports the outer periphery of the second substrate W2 over the entire periphery.
[0077] The main body 200 also has a plurality of lower suction ports 203. The plurality of lower suction ports 203 are provided in a suction region surrounded by the lower ribs 202. The plurality of lower suction ports 203 are connected to a suction device (not shown), such as a vacuum pump, via a suction pipe (not shown).
[0078] The second holding unit 141 depressurizes the suction area surrounded by the lower ribs 202 by vacuuming the suction area through the plurality of lower suction ports 203. As a result, the second substrate W2 placed in the suction area is suction-held by the second holding unit 141.
[0079] Because the lower ribs 202 support the entire outer periphery of the underside of the second substrate W2, the second substrate W2 is properly vacuumed up to the outer periphery. This allows the entire surface of the second substrate W2 to be suction-held. Furthermore, because the underside of the second substrate W2 is supported by multiple pins 201, the second substrate W2 is easily peeled off from the second holding portion 141 when the vacuuming of the second substrate W2 is released.
[0080] In the bonding device 40, the first holding unit 140 suction-holds the first substrate W1, and the second holding unit 141 suction-holds the second substrate W2. After that, the bonding device 40 releases the suction-holding of the first substrate W1 by the multiple inner suction units 302, and then lowers the pressing pin 191 of the striker 190 to press down the center of the first substrate W1. This results in a laminated substrate T in which the first substrate W1 and the second substrate W2 are bonded together. The laminated substrate T is carried out of the bonding device 40 by the fourth transfer device 37. Details of the processing by the bonding device 40 will be described later.
[0081] (Regarding the control device) The bonding system 1 also includes a control device 70. The control device 70 controls the operation of the bonding system 1. The control device 70 is, for example, a computer, and includes a control unit and a storage unit (not shown). The control unit includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc., and various circuits. The CPU of the microcomputer realizes the control described below by reading and executing a program stored in the ROM. The storage unit is realized by, for example, a semiconductor memory element such as RAM or flash memory, or a storage device such as a hard disk or optical disk.
[0082] Such a program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit of the control device 70. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
[0083] (About the load lock chamber) Next, a specific configuration example of the load lock chamber 31d according to the embodiment will be described with reference to FIGS. 6 to 9. FIG. 6 is a plan view of the load lock chamber 31d according to the embodiment. FIG. 7 is a side view of the load lock chamber 31d according to the embodiment, seen from the access direction of the first transfer device 22. FIG. 8 is a side view of the load lock chamber 31d according to the embodiment, seen from the access direction of the second transfer device 32. FIG. 9 is a side view of the load lock chamber 31d according to the embodiment, seen from the access direction of the third transfer device 34.
[0084] As shown in FIG. 6, the load lock chamber 31d according to this embodiment is accessed by the first transfer device 22, the second transfer device 32, and the third transfer device .
[0085] Specifically, the load lock chamber 31d is provided with a plurality of (four in this example) gate valves 101 to 104 on three different side surfaces of the load lock chamber 31d, respectively. Each of the gate valves 101 to 104 is capable of opening and closing a storage section for the first substrate W1 and the second substrate W2 provided inside the load lock chamber 31d.
[0086] 7 to 9, the accommodation section of the load lock chamber 31d is divided into a first accommodation section 311 and a second accommodation section 312 that are stacked in the height direction. The first accommodation section 311 and the second accommodation section 312 can accommodate, for example, one first substrate W1 or one second substrate W2.
[0087] As shown in FIGS. 7 and 9, the first accommodating section 311 has an opening 311a on the side surface facing the first conveying device 22, and an opening 311b on the side surface facing the third conveying device .
[0088] A first gate valve 101 is provided on the side of the load lock chamber 31d facing the first transfer device 22, and an opening 311a of the first accommodation part 311 is opened and closed by the first gate valve 101. A third gate valve 103 is provided on the side of the load lock chamber 31d facing the third transfer device 34, and an opening 311b of the first accommodation part 311 is opened and closed by the third gate valve 103.
[0089] First accommodation unit 311 is connected to a suction device such as a vacuum pump via a suction pipe. First accommodation unit 311 is evacuated by the suction device with openings 311a and 311b closed by first gate valve 101 and third gate valve 103, i.e., with first accommodation unit 311 sealed. As a result, the atmosphere in first accommodation unit 311 changes from a normal pressure atmosphere to a reduced pressure atmosphere.
[0090] The first gate valve 101 is opened on the condition that the third gate valve 103 is closed, thereby maintaining a reduced pressure atmosphere in the transfer chamber 34a in which the third transfer device 34 is disposed.
[0091] As shown in FIGS. 8 and 9, the second accommodating section 312 has an opening 312a on the side surface facing the second conveying device 32, and an opening 312b on the side surface facing the third conveying device .
[0092] A second gate valve 102 is provided on the side of the load lock chamber 31d facing the second transfer device 32, and an opening 312a of the second accommodation part 312 is opened and closed by the second gate valve 102. A fourth gate valve 104 is provided on the side of the load lock chamber 31d facing the third transfer device 34, and an opening 312b of the second accommodation part 312 is opened and closed by the fourth gate valve 104.
[0093] Second accommodation unit 312 is connected via a suction pipe to a suction device separate from first accommodation unit 311. Second accommodation unit 312 is evacuated by the suction device with openings 312a and 312b closed by second gate valve 102 and fourth gate valve 104, i.e., with second accommodation unit 312 sealed. As a result, the atmosphere in second accommodation unit 312 changes from a normal pressure atmosphere to a reduced pressure atmosphere.
[0094] The second gate valve 102 is opened on the condition that the third gate valve 103 is closed, thereby maintaining a reduced pressure atmosphere in the transfer chamber 34a in which the third transfer device 34 is disposed.
[0095] Here, an example has been shown in which the second accommodating section 312 is disposed above the first accommodating section 311, but the second accommodating section 312 may also be disposed below the first accommodating section 311.
[0096] The load lock chamber 31d according to the embodiment is configured as described above, and the first transfer device 22 can access the first accommodation unit 311 via the first gate valve 101, and the second transfer device 32 can access the second accommodation unit 312 via the second gate valve 102. Furthermore, the third transfer device 34 can access the first accommodation unit 311 via the third gate valve 103, and can access the second accommodation unit 312 via the fourth gate valve 104.
[0097] As described above, in the bonding system 1 according to the embodiment, the first transfer device 22, the second transfer device 32, and the third transfer device 34 access the load lock chamber 31d via different gate valves 101 to 104, respectively.
[0098] <2. Specific operation of the joining system> Next, a specific operation of the bonding system 1 according to the embodiment will be described with reference to Fig. 10. Fig. 10 is a flowchart showing the transport procedure of the first substrate W1, the second substrate W2, and the overlapped substrate T in the bonding system 1 according to the embodiment. The transport process shown in Fig. 10 and various processes performed at the transport destination are executed under the control of the control device 70.
[0099] First, a cassette C1 containing a plurality of first substrates W1, a cassette C2 containing a plurality of second substrates W2, and an empty cassette C3 are placed on the placement plates 11a to 11c of the carry-in / out block 2. Thereafter, the first substrate W1 is removed from the cassette C1 placed on the placement plate 11a by the first transport device 22 (step S101) and transported to the reading unit 31a (step S102). In the reading unit 31a, a reading process is performed to read the identification number of the first substrate W1.
[0100] Next, the first substrate W1 is transferred from the reading unit 31a to the load lock chamber 31d by the first transfer device 22 (step S103). Specifically, when the first substrate W1 is transferred to the front of the load lock chamber 31d, the gate valve 101 is opened and the first substrate W1 is placed in the first accommodation unit 311 of the load lock chamber 31d. Thereafter, the gate valve 101 is closed. Then, the suction device is activated, and the first accommodation unit 311 is decompressed to create a decompressed atmosphere.
[0101] Thereafter, the gate valve 103 is opened, and the third transfer device 34 takes out the first substrate W1 from the first accommodation unit 311. In addition, the gate valve 105 is opened, and the third transfer device 34 transfers the first substrate W1 to the surface modification device 35 (step S104). Thereafter, the gate valve 105 is closed, and the surface modification process of the first substrate W1 is performed in the surface modification device 35.
[0102] When the surface modification process is completed, the gate valve 105 is opened, and the third transfer device 34 removes the first substrate W1 from the surface modification device 35. The gate valve 104 is also opened, and the third transfer device 34 places the first substrate W1 in the second accommodation part 312 of the load lock chamber 31d (step S105). Thereafter, the gate valve 104 is closed, and the second accommodation part 312 is switched from a reduced pressure atmosphere to an atmospheric atmosphere.
[0103] Subsequently, after the gate valve 102 is opened, the second transfer device 32 takes out the first substrate W1 from the second accommodation unit 312 and transfers it to the surface hydrophilization device 36 (step S106). In the surface hydrophilization device 36, a process of hydrophilizing the bonding surface of the first substrate W1 and a cleaning process of the bonding surface are performed.
[0104] Next, the first substrate W1 is transported by the second transport device 32 to the first alignment section 33e (step S107). In the first alignment section 33e, the horizontal orientation of the first substrate W1 is adjusted and the first substrate W1 is turned over, so that the bonding surface of the first substrate W1 faces downward.
[0105] Next, the first substrate W1 is taken out of the first alignment section 33e by the fourth transfer device 37 and transferred to the first temperature adjustment plate 39a (step S108). At the first temperature adjustment plate 39a, a process of adjusting the temperature of the first substrate W1 to a predetermined temperature is performed.
[0106] Thereafter, the first substrate W1 is removed from the first temperature control plate 39a by the fourth transfer device 37 and transferred to the bonding device 40 (step S109). The bonding device 40 uses the first holding part 140 to suction-hold the first substrate W1 from above with the bonding surface of the first substrate W1 facing downward. The first substrate W1 is held by the first holding part 140 with the notch portion facing a predetermined direction.
[0107] The processing of the second substrate W2 overlaps with the processing of steps S101 to S109 for the first substrate W1. Note that the processing in the reading unit 31a, the surface modification device 35, and the surface hydrophilization device 36 is similar to the processing for the first substrate W1, and therefore a description thereof will be omitted here.
[0108] First, the second substrate W2 is removed from the cassette C2 placed on the mounting plate 11b by the first transfer device 22 (step S110) and transferred to the reading unit 31a (step S111). Subsequently, the second substrate W2 is transferred to the first storage unit 311 of the load lock chamber 31d by the first transfer device 22 (step S112), and then removed from the first storage unit 311 by the third transfer device 34 and transferred to the surface modification device 35 (step S113).
[0109] Next, the second substrate W2 is taken out of the surface modification device 35 by the third transfer device 34 and placed in the second accommodation section 312 of the load lock chamber 31d (step S114). Thereafter, the second substrate W2 is taken out of the second accommodation section 312 by the second transfer device 32 and transferred to the surface hydrophilization device 36 (step S115).
[0110] Subsequently, the second substrate W2 is taken out of the surface hydrophilization device 36 by the second transfer device 32 and transferred to the second alignment section 33d. In the second alignment section 33d, a process of adjusting the horizontal orientation of the second substrate W2 is performed.
[0111] Subsequently, the second substrate W2 is taken out of the second alignment section 33d by the fourth transfer device 37 and transferred to the second temperature adjustment plate 39b (step S117). At the second temperature adjustment plate 39b, a process of adjusting the temperature of the second substrate W2 to a predetermined temperature is performed.
[0112] Thereafter, the second substrate W2 is removed from the second temperature control plate 39b by the fourth transfer device 37 and transferred to the bonding device 40 (step S118). The bonding device 40 suction-holds the second substrate W2 from below using the second holding part 141 with the bonding surface of the second substrate W2 facing upward. The second substrate W2 is held by the second holding part 141 with the notch portion facing a predetermined direction.
[0113] Next, a process of bonding the first substrate W1 and the second substrate W2 is performed in the bonding device 40. First, the bonding device 40 moves the second holding part 141 vertically upward using a lifting mechanism (not shown), thereby bringing the second substrate W2 closer to the first substrate W1.
[0114] Next, after the suction and holding of the first substrate W1 by the multiple inner suction portions 302 is released, the pressing pin 191 of the striker 190 is lowered to press down the center of the first substrate W1.
[0115] When the center of the first substrate W1 contacts the center of the second substrate W2 and the centers of the first substrate W1 and the second substrate W2 are pressed together with a predetermined force by the striker 190, bonding begins between the pressed centers of the first substrate W1 and the second substrate W2. That is, because the bonding surfaces of the first substrate W1 and the second substrate W2 have been modified by the surface modification device 35, van der Waals forces (intermolecular forces) are first generated between the bonding surfaces, bonding the bonding surfaces together. Furthermore, because the bonding surfaces of the first substrate W1 and the second substrate W2 have been hydrophilized by the surface hydrophilization device 36, hydrophilic groups between the bonding surfaces form hydrogen bonds, firmly bonding the bonding surfaces together. In this way, a bonding region is formed.
[0116] Thereafter, a bonding wave is generated between the first substrate W1 and the second substrate W2, expanding the bonding area from the center of the first substrate W1 and the second substrate W2 toward their outer peripheries. The first substrate W1 is then released from suction and hold by the multiple outer suction portions 301. This causes the outer periphery of the first substrate W1, which had been suction-held by the outer suction portions 301, to fall. As a result, the entire bonding surfaces of the first substrate W1 and the second substrate W2 come into contact, forming an overlapped substrate T.
[0117] Thereafter, the pressing pin 191 is raised to the first holding portion 140, and the suction and holding of the second substrate W2 by the second holding portion 141 is released.
[0118] The laminated substrate T is removed from the bonding apparatus 40 by the fourth transfer device 37 (step S119) and transferred to the second transfer section 33b (step S120). Subsequently, the laminated substrate T is removed from the second transfer section 33b by the second transfer device 32 and transferred to the first transfer section 31c (step S121). Then, the laminated substrate T is removed from the first transfer section 31c by the first transfer device 22 and stored in the cassette C3 placed on the mounting plate 11c (step S122). This completes a series of substrate processing steps by the bonding system 1.
[0119] In a conventional bonding system, a mounting table for a first substrate and a second substrate is disposed between a first transfer device and a second transfer device, and a load lock chamber is disposed at a location away from the first transfer device. In such a conventional bonding system, the first substrate or the second substrate transported by the first transfer device is handed over to the second transfer device via the mounting table, and then transported to the load lock chamber by the second transfer device.
[0120] In contrast, in the bonding system 1 according to the embodiment, the load lock chamber 31d is disposed at a position accessible to the first transfer device 22. Specifically, in the bonding system 1 according to the embodiment, the load lock chamber 31d is disposed between the first transfer device 22 and the second transfer device 32. In this way, according to the bonding system 1 according to the embodiment, by making the load lock chamber 31d accessible from the first transfer device 22 as well, it is possible to reduce the overall length (length in the X-axis direction) by, for example, the space required for the mounting table in a conventional bonding system. Therefore, according to the bonding system 1 according to the embodiment, it is possible to reduce the footprint, which is the proportion of the floor area of a clean room or the like that the bonding system 1 occupies.
[0121] Furthermore, according to the bonding system 1 of the embodiment, when the first substrate W1 or the second substrate W2 is transported to the load lock chamber 31d, the process of transferring the first substrate W1 or the second substrate W2 from the first transfer device 22 to the second transfer device 32 is not required. Therefore, according to the bonding system 1 of the embodiment, the throughput of a series of substrate processing steps performed in the bonding system 1 can be improved.
[0122] The accommodation section of the load lock chamber 31d according to the embodiment is divided into a first accommodation section 311 accessed by the first transfer device 22 and a second accommodation section 312 accessed by the second transfer device 32. The first accommodation section 311 and the second accommodation section 312 can be switched between a normal pressure atmosphere and a reduced pressure atmosphere independently of each other.
[0123] With this configuration, one of the first accommodation unit 311 and the second accommodation unit 312 can be set to a normal pressure atmosphere, and the other accommodation unit can be set to a reduced pressure atmosphere. That is, in the load lock chamber 31d, the operation of loading / unloading the first substrate W1 or the second substrate W2 performed in a normal pressure atmosphere and the operation of loading / unloading the first substrate W1 or the second substrate W2 performed in a reduced pressure atmosphere can be performed in parallel. Therefore, according to the bonding system 1 according to this embodiment, the throughput of a series of substrate processing steps performed in the bonding system 1 can be improved.
[0124] In the plan view shown in Figure 1, the two third transfer devices 34, the two surface modification devices 35, and the two load lock chambers 31d are arranged in a straight line along the arrangement direction (X-axis direction) of the load / unload block 2 and the processing block 3, and are arranged symmetrically with respect to a straight line passing through the second transfer device 32.
[0125] The two load lock chambers 31d are arranged in an area surrounded by the carry-in / out block 2, the two third transfer devices 34, and the second transfer device 32. By arranging the two load lock chambers 31d as described above, the footprint can be reduced.
[0126] Furthermore, the load lock chamber 31d has four sides that form a trapezoidal shape in plan view, which allows the footprint to be further reduced.
[0127] (First Modification) The bonding system 1 may further include an inspection device that inspects the first substrate W1 and the second substrate W2. The inspection device inspects, for example, the presence or absence of particles on the bonding surfaces of the first substrate W1 and the second substrate W2.
[0128] 11 to 13 are diagrams showing examples of the arrangement of the inspection device. For example, as shown in Fig. 11, the inspection device 80 may be arranged above the surface hydrophilization device 36 in the first processing block 3a. That is, the inspection device 80 may be stacked together with the surface modification device 35 and the surface hydrophilization device 36. The inspection device 80 may also be arranged below the surface hydrophilization device 36 or below the surface modification device 35. Such an arrangement can prevent an increase in the footprint.
[0129] 12, the inspection device 80 may be disposed, for example, in the first processing block 3a, to the side of the surface hydrophilization device 36 and the surface modification device 35. In this case, the second transport device 32 may be configured to be movable along the X-axis direction so as to be accessible to both the surface modification device 35 and the inspection device 80.
[0130] The surface hydrophilization device 36 does not necessarily need to be stacked on the surface hydrophilization device 36, but may be arranged to the side of the surface hydrophilization device 36. In this case, the inspection device 80 may be arranged above or below the surface hydrophilization device 36, to the side of the surface modification device 35.
[0131] 13, the inspection device 80 may be disposed above the bonding device 40 in the second processing block 3b. Alternatively, the inspection device 80 may be disposed below the bonding device 40. In this way, by disposing the inspection device 80 above or below the bonding device 40, an increase in the footprint can be suppressed.
[0132] The inspection device 80 arranged in the second processing block 3b is not limited to inspecting the first substrate W1 and the second substrate W2, but may also inspect the overlapped substrate T.
[0133] (Second Modification) In the above-described embodiment, an example in which the processing block 3 is divided into a first processing block 3a and a second processing block 3b has been described, but the processing block 3 does not necessarily have to be divided. An example in which the processing block 3 is not divided will be described with reference to Fig. 14. Fig. 14 is a schematic plan view showing the configuration of a bonding system according to a second modified example.
[0134] 14, the bonding system 1A according to the second modification includes a processing block 3A. The processing block 3A includes a transport area 90 in the center, and the transport area 90 includes a transport path 91 extending in the X-axis direction and a second transport device 32 movable along the transport path 91.
[0135] In the processing block 3A, a third transfer device 34, a surface modification device 35, and a bonding device 40 are arranged on the positive Y-axis side and the negative Y-axis side of the transfer region 90, respectively. The third transfer device 34, the surface modification device 35, and the bonding device 40 are arranged in this order along the positive X-axis direction.
[0136] In the processing block 3A, a first stacking unit 31 including a load lock chamber 31d is disposed between the transfer region 90 and the carry-in / out block 2. In the processing block 3A, a third temporary placement unit 38a and a fourth temporary placement unit 38b are disposed on the opposite side of the transfer region 90 from the first stacking unit 31.
[0137] In this way, the bonding system 1A does not necessarily need to be divided into the first processing block 3a and the second processing block 3b.
[0138] As described above, the bonding system according to the embodiment (for example, bonding system 1) is a bonding system that forms a laminated substrate (for example, laminated substrate T) by bonding a first substrate (for example, first substrate W1) and a second substrate (for example, second substrate W2) using intermolecular forces, and includes a first transfer device (for example, first transfer device 22), a second transfer device (for example, second transfer device 32), a third transfer device (for example, third transfer device 34), a load lock chamber (for example, load lock chamber 31d), and multiple gates (for example, gate valves 101 to 104). The first transfer device and the second transfer device transfer the first substrate and the second substrate in a normal pressure atmosphere. The third transfer device transfers the first substrate and the second substrate in a reduced pressure atmosphere. The load lock chamber has storage sections (for example, first storage section 311 and second storage section 312) that can store a first substrate and a second substrate, and the storage sections can be switched between a normal pressure atmosphere and a reduced pressure atmosphere. Multiple gates are provided on three different sides of the load lock chamber, and can open and close the load lock chamber. Furthermore, the first transfer device, second transfer device, and third transfer device each load and unload the first substrate and the second substrate into and out of the load lock chamber through different gates among the multiple gates.
[0139] Therefore, the joint system according to the embodiment can reduce the footprint.
[0140] The bonding system according to the embodiment includes a load-in / load-out block (e.g., load-in / load-out block 2) and a processing block (e.g., processing block 3). The load-in / load-out block may have mounting tables (e.g., mounting plates 11a-11d) on which cassettes (e.g., cassettes C1-C4) are placed. The processing block includes a surface modification device (e.g., surface modification device 35) that modifies the surfaces of the first and second substrates to be bonded (e.g., bonding surfaces) in a reduced pressure atmosphere, and a surface hydrophilization device (e.g., surface hydrophilization device 36) that hydrophilizes the modified surfaces of the first and second substrates. In this case, the first transfer device may be located in the load-in / load-out block and transport the first and second substrates from the cassettes to the load lock chamber. The third transfer device may be located in the processing block and transport the first and second substrates from the load lock chamber to the surface modification device. The second transfer device may be disposed in the processing block and may transfer the first substrate and the second substrate from the load lock chamber to the surface hydrophilization device.
[0141] The load lock chamber may be disposed between the first and second transfer devices, thereby reducing the footprint.
[0142] The storage section may include a first storage section (for example, first storage section 311) and a second storage section (for example, second storage section 312). The first storage section is accessed by a first transfer device. The second storage section is disposed above or below the first storage section, is switchable between normal pressure and reduced pressure atmospheres independently of the first storage section, and is accessed by a second transfer device. This can improve throughput.
[0143] In a plan view, the two third transfer devices, the two surface modification devices, and the two load-lock chambers may be arranged symmetrically with respect to a line that runs along the direction in which the load-unload block and the processing block are arranged and that passes through the second transfer device. The two load-lock chambers may be arranged in an area surrounded by the load-unload block, the two third transfer devices, and the second transfer device. This reduces the footprint.
[0144] The load lock chamber may have a trapezoidal shape in plan view, with four sides including three different sides, which can further reduce the footprint.
[0145] The processing block may include a stacking section (for example, first stacking section 31) in which multiple modules are stacked, between the load / unload block and the second transfer device. In this case, the load lock chamber may be disposed in the stacking section. The multiple modules may also include at least one of a first transfer section (for example, first transfer section 31c) where the laminated substrate is transferred from the second transfer device to the first transfer device, a temporary placement section for the first substrate and the second substrate (for example, first temporary placement section 31b), and a reading section (for example, reading section 31a) that reads identification information attached to the first substrate and the second substrate.
[0146] The surface hydrophilization device may be located above or below the surface modification device, which can further reduce the footprint.
[0147] The bonding system according to the embodiment may include an inspection device (e.g., inspection device 80) that inspects the first and second substrates. In this case, the inspection device may be stacked together with the surface modification device and the surface hydrophilization device in a processing block (e.g., first processing block 3a). This can prevent an increase in the footprint.
[0148] The bonding system according to the embodiment may include a bonding device (for example, bonding device 40) that bonds the hydrophilized first substrate and the second substrate by intermolecular forces. In this case, the bonding device may be disposed in a processing block (for example, second processing block 3b).
[0149] The processing block may include a first processing block (for example, first processing block 3a) and a second processing block (for example, second processing block 3b). The first processing block is adjacent to the carry-in / out block, and includes a second transfer device, a third transfer device, a surface modification device, and a surface hydrophilization device. The second processing block is adjacent to the first processing block. In this case, the bonding device may be disposed in the second processing block.
[0150] The first processing block may include a second transfer section (for example, second transfer section 33b) between the second transfer device and the second processing block. In this case, the second processing block may include a fourth transfer device (for example, fourth transfer device 37) that transfers the first substrate and the second substrate placed on the second transfer section by the second transfer device to the bonding device.
[0151] The bonding system according to the embodiment may include an inspection device (e.g., inspection device 80) that inspects at least one of the first substrate, the second substrate, and the laminated substrate. In this case, the inspection device may be disposed above or below the bonding device in the second processing block. This can prevent an increase in the footprint.
[0152] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]
[0153] 1: Joint system 2: Loading / unloading block 3: Processing block 3a: First processing block 3b: Second processing block 10: Mounting table 11a: Mounting plate 11b: Mounting plate 11c: Placing plate 11d: Placement plate 22: First conveying device 31: First laminated section 31a: Reading unit 31b: First temporary storage area 31c: 1st delivery department 31d: Load lock chamber 32: Second conveying device 33: Second laminated section 33a: Second temporary storage area 33b:Second delivery section 33c: 3rd delivery department 33d: Second alignment section 33e: First alignment section 34: Third conveying device 35: Surface modification equipment 36: Surface modification equipment 37: Fourth transport device 38a: Third temporary storage area 38b: Temporary storage area No. 4 39:Joining device 39a: 1st temperature control board 39b: 2nd temperature control board 40:Joining device 101~105: Gate valves 311: First storage section 312: Second storage section
Claims
1. 1. A bonding system for forming a composite substrate by bonding a first substrate and a second substrate together using intermolecular forces, comprising: a carry-in / out block having a table on which a cassette is placed; a processing block in which a surface modification device that modifies the surfaces of the first substrate and the second substrate to be bonded in a reduced pressure atmosphere, and a surface hydrophilization device that hydrophilizes the modified surfaces of the first substrate and the second substrate and cleans the surfaces to be bonded, are disposed; a first transfer device and a second transfer device that transfer the first substrate and the second substrate in a normal pressure atmosphere; a third transfer device that transfers the first substrate and the second substrate in the reduced pressure atmosphere; a load lock chamber having a first accommodation portion and a second accommodation portion capable of accommodating the first substrate and the second substrate, the first accommodation portion and the second accommodation portion being switchable between the normal pressure atmosphere and the reduced pressure atmosphere; Equipped with the first transport device is disposed in the carry-in / out block and transports the first substrate and the second substrate from the cassette to the first accommodation unit; the third transfer device is disposed in the processing block and transfers the first substrate and the second substrate from the first accommodation unit to the surface modification device; The second transport device is disposed in the processing block and transports the first substrate and the second substrate from the second accommodation unit to the surface hydrophilization device. Joining system.
2. The bonding system according to claim 1 , wherein the third transfer device transfers the first substrate and the second substrate from the surface modification device to the second housing unit.
3. The bonding system according to claim 1 or 2, wherein the first container is disposed between the first transport device and the second transport device.
4. A bonding apparatus for bonding the hydrophilized first substrate and the hydrophilized second substrate by intermolecular forces. Equipped with The bonding system according to claim 1 or 2, wherein the bonding device is disposed in the processing block.
5. The processing block comprises: a first processing block adjacent to the carry-in / out block, in which the second transfer device, the third transfer device, the surface modification device, and the surface hydrophilization device are arranged; a second processing block adjacent to the first processing block; Equipped with The bonding system of claim 4 , wherein the bonding device is disposed in the second processing block.
6. The first processing block includes: a second transfer section between the second transfer device and the second processing block; Equipped with The second processing block includes: a fourth transfer device that transfers the first substrate and the second substrate placed on the second transfer section by the second transfer device to the bonding device; The joint system of claim 5 , comprising:
Citation Information
Patent Citations
Bonding system
JP2018010921A