Semiconductor device and distance measurement device

Abstract

To provide a semiconductor device capable of improving light utilization efficiency.SOLUTION: A semiconductor device according to an embodiment of the present disclosure comprises: a semiconductor layer; a wiring layer provided on a first surface side of the semiconductor layer; a light-emitting element provided on a second surface side of the semiconductor layer opposite the first surface side; and a first light guide member provided on the first surface side of the semiconductor layer and configured to receive light from the light-emitting element.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a distance measuring device. [Background technology]

[0002] An FMCW type LiDAR (Light Detection and Ranging) device having an LD (Laser Diode) and a frequency sweep characteristic measuring device has been proposed (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-172404 Summary of the Invention [Problem to be solved by the invention]

[0004] In a device that emits light, it is desirable to improve the efficiency of light utilization.

[0005] It is desirable to provide a semiconductor device that can improve the light utilization efficiency. [Means for solving the problem]

[0006] A semiconductor device according to one embodiment of the present disclosure includes a semiconductor layer, a wiring layer provided on a first surface side of the semiconductor layer, a light-emitting element provided on a second surface side opposite the first surface of the semiconductor layer, and a first light-guiding member provided on the first surface side of the semiconductor layer and into which light from the light-emitting element is incident. A distance measuring device according to one embodiment of the present disclosure includes a semiconductor layer, a wiring layer provided on a first surface side of the semiconductor layer, a light-emitting element provided on a second surface side opposite the first surface of the semiconductor layer, a first light-guiding member provided on the first surface side of the semiconductor layer and into which light from the light-emitting element is incident, and a light-receiving element provided on the first surface side of the semiconductor layer. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of a schematic configuration of a semiconductor device according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a diagram illustrating a configuration example of a semiconductor device according to an embodiment of the present disclosure. [Figure 3] FIG. 3 is a diagram illustrating an example of a signal generated by the semiconductor device according to the embodiment of the present disclosure. [Figure 4] FIG. 4 is a diagram illustrating an example of a cross-sectional configuration of a semiconductor device according to an embodiment of the present disclosure. [Figure 5] FIG. 5 is a diagram illustrating a configuration example of a semiconductor device according to an embodiment of the present disclosure. [Figure 6] FIG. 6 is a diagram illustrating a configuration example of a semiconductor device according to an embodiment of the present disclosure. [Figure 7] FIG. 7 is a diagram illustrating an example of a cross-sectional configuration of a semiconductor device according to an embodiment of the present disclosure. [Figure 8A] FIG. 8A is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Figure 8B] FIG. 8B is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Figure 8C] FIG. 8C is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Figure 8D] FIG. 8D is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Figure 8E] FIG. 8E is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Figure 8F] FIG. 8F is a diagram illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure. [Figure 9] FIG. 9 is a diagram for explaining a configuration example of a semiconductor device according to the first modification of the present disclosure. [Figure 10] FIG. 10 is a diagram for explaining a configuration example of a semiconductor device according to the first modification of the present disclosure. [Figure 11]FIG. 11 is a diagram for explaining a configuration example of a semiconductor device according to the first modification of the present disclosure. [Figure 12] FIG. 12 is a diagram illustrating a configuration example of a semiconductor device according to the second modification of the present disclosure. [Figure 13] FIG. 13 is a diagram for explaining a configuration example of a semiconductor device according to the second modification of the present disclosure. [Figure 14] FIG. 14 is a diagram for explaining a configuration example of a semiconductor device according to the second modification of the present disclosure. [Figure 15] FIG. 15 is a diagram for explaining a configuration example of a semiconductor device according to the third modification of the present disclosure. [Figure 16] FIG. 16 is a block diagram showing an example of a schematic configuration of a vehicle control system. [Figure 17] FIG. 17 is an explanatory diagram showing an example of the installation positions of the outside-of-vehicle information detection unit and the imaging unit. [Figure 18] FIG. 18 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. [Figure 19] FIG. 19 is a block diagram showing an example of the functional configuration of the camera head and the CCU. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. Embodiment 2. Variations 3. Usage example 4. Application Examples

[0009] <1. Embodiment> 1 is a diagram illustrating an example of a schematic configuration of a semiconductor device according to an embodiment of the present disclosure. The semiconductor device according to the present disclosure is applicable to a light emitting device, a distance measuring device, etc. The semiconductor device 1 can be configured as a device capable of performing distance measurement, i.e., a distance measuring device. The semiconductor device 1 is configured to be able to perform distance measurement using, for example, an FMCW (Frequency Modulated Continuous Wave) method.

[0010] The semiconductor device 1 transmits and receives optical signals that become frequency-modulated light, and can measure the distance to an object, the speed of the object, etc. The semiconductor device 1 can be applied as an FMCW-LiDAR (Light Detection and Ranging). Note that the semiconductor device 1 as a LiDAR device can also be called, for example, a laser radar device.

[0011] The semiconductor device 1 has, for example, a photonic integrated circuit (PIC). The semiconductor device 1 can be manufactured using a silicon-containing substrate (such as a silicon substrate or an SOI (Silicon On Insulator) substrate) and silicon photonics technology. As an example, the semiconductor device 1 has a structure (a stacked structure) formed by stacking multiple substrates. Note that a semiconductor device having a light-receiving element can also be called a photodetector.

[0012] 1, the semiconductor device 1 includes, for example, a light source unit 200, a modulator 15, a coupler 20, a coupler 25, an antenna unit 30, a coupler 40, and a light receiving unit 50. The semiconductor device 1 can irradiate an optical signal (laser light) onto a measurement object and receive the optical signal reflected by the measurement object. The semiconductor device 1 irradiates an optical signal that has been frequency-modulated by the light source unit 200 and the antenna unit 30, etc. onto the measurement object, and receives the optical signal that has been reflected by the measurement object and delayed.

[0013] In the semiconductor device 1, for example, an optical signal obtained by interfering a reference light branched (separated) from the output light of the light source unit 200 with the reflected light reflected by the measurement object is input to the light receiving unit 50, and an electrical signal having a frequency corresponding to the frequency of the reference light and the frequency of the reflected light is detected. The electrical signal generated by receiving the reflected light from the measurement object is, for example, a beat signal having a frequency corresponding to the difference between the frequency of the reference light and the frequency of the reflected light, and is a signal corresponding to the distance to the measurement object.

[0014] The modulator 15, coupler 20, coupler 25, antenna unit 30, coupler 40, and light receiving unit 50 are provided, for example, on one substrate (a semiconductor substrate such as a silicon substrate or an SOI substrate). The light source unit 200 is provided on the same substrate as the antenna unit 30 and is mounted on the semiconductor device 1. The semiconductor device 1 may have a layered structure formed by stacking multiple substrates.

[0015] The light source unit 200 has, for example, one or more light-emitting elements 10. The light-emitting elements 10 are configured to be capable of generating an optical signal. The light-emitting elements 10 are configured to be capable of outputting, for example, laser light as the optical signal. The light-emitting elements 10 are configured, for example, using a III-V group compound semiconductor material.

[0016] The light-emitting element 10 is made of, for example, InP (indium phosphide), GaAs (gallium arsenide), or the like, and has a configuration in which a p-type cladding layer, an active layer, and an n-type cladding layer are stacked. The active layer of the light-emitting element 10 has, for example, a multiple quantum well structure (MQW). The light-emitting element 10 can generate and emit laser light. The light-emitting element 10 may also be made of a semiconductor optical amplifier (SOA).

[0017] The modulator 15 is configured to be able to modulate the frequency of an optical signal. An optical signal (laser light) is input (incident) to the modulator 15 from the light emitting element 10 of the light source section 200. The modulator 15 (modulation section) is configured to be able to modulate the frequency of the transmitted optical signal and output a frequency-modulated optical signal. The modulator 15 can generate and output a signal (chirp signal) whose frequency changes continuously over time.

[0018] The modulator 15 is a phase modulator and is configured using, for example, a Mach-Zehnder interferometer. As an example, the modulator 15 (phase modulator) can output frequency-modulated laser light by multiplexing (combining) the laser light from the light-emitting element 10 with phase-adjusted laser light. The modulator 15 outputs the output light, which becomes a frequency-modulated optical signal, to the antenna unit 30 via the coupler 20.

[0019] The light emitting element 10 and the modulator 15 output, for example, output light that is a frequency-modulated optical signal to a measurement target via an antenna unit 30 or the like. The light emitting element 10 and the modulator 15 can generate frequency-modulated laser light and emit the frequency-modulated laser light. Note that the light source unit 200 may be configured to include the modulator 15.

[0020] An optical signal (for example, frequency-modulated laser light) transmitted from the modulator 15 is input (incident) to the coupler 20. The output light of the modulator 15 is branched (separated) by the coupler 20. In the example shown in FIG. 1, an optical signal S1, which is a part of the output light of the modulator 15, is transmitted by the coupler 20 to the antenna unit 30. In addition, an optical signal (referred to as a reference signal S2), which is another part of the output light of the modulator 15, is transmitted to the coupler 25 and the light-receiving unit 50.

[0021] As an example, a reference signal S2 having a power equal to or less than 50% of the power (light amount) of the output light of the modulator 15 is split from the output light of the modulator 15 as reference light (local light) and input to the coupler 25. The coupler 20 is configured to transmit an optical signal based on the output light of the modulator 15 and the reference signal. The coupler 20 is configured to split the incident light and can also be called a splitter.

[0022] The coupler 25 is, for example, a directional coupler, and is connected between the coupler 20 and the coupler 40. In the example shown in Fig. 1, the coupler 25 constitutes a part of the circulator 27. The circulator 27 (circulator circuit) is configured to include, for example, the coupler 20, the coupler 25, etc., and is configured to be able to switch the optical signal to be transmitted. The circulator 27 may be configured to include the modulator 15.

[0023] The circulator 27 is configured to be able to selectively output, for example, local light (i.e., reference signal S2) and reflected light. The circulator 27 can output the reference signal S2, which is part of the output light of the modulator 15, to the coupler 40. The circulator 27 can also output the optical signal S3, which is reflected light (i.e., received light) input from the antenna unit 30, to the coupler 40.

[0024] The antenna unit 30 has one or more antennas 31 and is configured to be able to output (transmit) optical signals. The antenna unit 30 can also be called, for example, an antenna array including multiple antennas 31. The antenna unit 30 (antenna array) can have multiple antennas 31 arranged in a predetermined direction.

[0025] The antenna unit 30 is configured to output, for example, an optical signal transmitted from the light-emitting element 10 via the modulator 15 and the coupler 20 to the outside. In the example shown in Fig. 1, a frequency-modulated optical signal S1 is propagated from the coupler 20 to the antenna unit 30. The antenna unit 30 can emit the optical signal S1, which is frequency-modulated laser light, to a measurement target as output light (i.e., transmitted light, irradiated light).

[0026] The antenna unit 30 is also configured to be able to receive (receive) an optical signal reflected by the measurement object. The antenna unit 30 can receive, for example, an optical signal S3, which is a laser beam reflected and delayed by the measurement object. The antenna unit 30 outputs the optical signal S3, which is the reflected light (i.e., received light), to the coupler 40 and the light receiving unit 50 via the coupler 20.

[0027] The antenna unit 30 has, for example, a plurality of antennas 31, a plurality of switches 32, and a plurality of heaters 35. The antenna 31 is configured to be able to output an optical signal. The antenna 31 is also configured to be able to receive an optical signal reflected by the object to be measured. The antenna 31 is a transmitting antenna configured to be able to transmit an optical signal, and is also a receiving antenna configured to be able to receive an optical signal.

[0028] The antenna 31 is configured by, for example, a diffraction grating. As an example, the antenna 31 is formed using Si (silicon) and configured as a transmitting / receiving antenna. The antenna 31 can irradiate a measurement object with frequency-modulated laser light and receive the laser light reflected and delayed by the measurement object.

[0029] The antenna unit 30 has a plurality of switches 32 provided corresponding to the plurality of antennas 31, and is configured to be able to select an antenna 31 to which the optical signal S1 is to be transmitted from the modulator 15. By switching the transmission path of the optical signal S1 using each switch 32 of the antenna unit 30, the antenna 31 that emits the optical signal S1 is changed, and the emission direction (travel direction) of the optical signal S1 is changed.

[0030] The heater 35 is provided, for example, around the switch 32 (i.e., the optical switch) and is configured to be able to heat the switch 32. The heater 35 is configured, for example, using a resistive element (resistor) and is provided for each switch 32 or for each set of switches 32. As an example, as schematically shown in FIG. 1, the heater 35 is electrically connected to wiring, pads 18, etc. and is configured to be able to conduct electricity.

[0031] In the antenna unit 30, the refractive index of the waveguide is changed by applying heat to the waveguide of the switch 32 by supplying a current to the heater 35, thereby switching the antenna 31 to which the optical signal S1 is transmitted. By controlling the supply of current to the heater 35, the antenna 31 (i.e., the diffraction grating) that emits the optical signal S1 is changed.

[0032] Furthermore, for example, the heater 35 may be provided around the antenna 31 and configured to be able to heat the antenna 31. Temperature control by the heater 35 changes the refractive index of the antenna 31, and adjusts the direction of the optical signal S1 emitted from the antenna 31. The heater 35 may be provided for each antenna 31 or for each of multiple antennas 31.

[0033] The coupler 40 is configured to be able to cause an optical signal reflected by the measurement target to interfere with a reference signal and output the interfered light (interference light). The coupler 40 is provided, for example, as an interference unit, and is configured to generate an optical signal by combining (combining) the reference light and the reflected light, and output the optical signal to the light receiving unit 50.

[0034] 1, the coupler 40 is configured to cause interference between a reference signal S2, which is reference light input from the modulator 15 and the coupler 25, and an optical signal S3, which is reflected light (i.e., received light) input from the antenna unit 30. The coupler 40 can transmit an optical signal obtained by causing the reference light and the reflected light to interfere with each other to the light receiving unit 50.

[0035] The light receiving unit 50 includes one or more light receiving elements 51 (light receiving elements 51a and 51b in FIG. 1). The light receiving elements 51 are, for example, photodiodes (PDs) and are configured to be able to receive optical signals. The light receiving unit 50 is configured to receive the optical signals and convert the optical signals into electrical signals.

[0036] 1, the light receiving unit 50 includes a light receiving element 51a and a light receiving element 51b, which are balanced photodiodes. The light receiving element 51a and the light receiving element 51b are electrically connected in series. The light receiving element 51a and the light receiving element 51b are configured to receive an optical signal via, for example, a coupler 40.

[0037] The light receiving element 51 (light receiving elements 51a and 51b in FIG. 1) receives light, generates charges through photoelectric conversion, and can output a current. The light receiving element 51 is configured to be able to output a signal based on the reference signal S2 and the optical signal S3 reflected by an object. For example, in response to receiving an optical signal obtained by mixing the reference signal S2 and the optical signal S3, which is the reflected light, a signal corresponding to the photocurrent flowing through the light receiving unit 50 is generated and output as a beat signal.

[0038] 2, the semiconductor device 1 may also include a detection circuit 60 and a signal processing circuit 70. The detection circuit 60 includes the above-described light receiving unit 50 and an amplifier circuit 55, and is configured to detect incident light. The amplifier circuit 55 is, for example, electrically connected to the light receiving unit 50, and is configured to be able to output a signal based on a photocurrent generated by the light receiving unit 50.

[0039] The amplifier circuit 55 is provided for the light receiving element 51 a and the light receiving element 51 b, and is configured to output a signal S4 based on the photocurrent generated by the light receiving element 51 a and the light receiving element 51 b. The amplifier circuit 55 includes, for example, a transimpedance amplifier (TIA), and is configured to convert the current signal into a voltage signal.

[0040] 2, the amplifier circuit 55 is electrically connected to the node connecting the light receiving element 51a and the light receiving element 51b. The amplifier circuit 55 converts the current signal detected by the light receiving unit 50 into a voltage signal and outputs the voltage signal S4 to the signal processing circuit 70. The signal S4 can be considered a beat signal (or an interference signal). The signal S4 has a frequency corresponding to the frequency difference between the optical signal S1 (and the reference signal S2) and the optical signal S3, for example.

[0041] As described above, the detection circuit 60 (detection unit) of the semiconductor device 1 is configured to output an electrical signal based on an optical signal. The amplification circuit 55 is configured, for example, by a TIA circuit, and can output a signal S4, which is a voltage signal corresponding to the optical signal received by the light receiving unit 50, to the signal processing circuit 70.

[0042] 3 is a diagram illustrating an example of a signal generated by a semiconductor device according to an embodiment. In FIG. 3, the vertical axis represents the frequency f of an optical signal, which is a chirp signal, and the horizontal axis represents time t. FIG. 3 shows an optical signal S1, which is light transmitted to an object to be measured, and an optical signal S3, which is light received from the object to be measured.

[0043] The coupler 40 outputs a reference optical signal corresponding to the transmitted optical signal S1, i.e., interference light generated by interfering between the reference signal S2 and the optical signal S3, to the light receiving unit 50 of the detection circuit 60. The detection circuit 60 receives the interference light from the coupler 40 using the light receiving unit 50, and can generate and output the signal S4 as described above. The semiconductor device 1 can use the signal S4 to determine the distance to the measurement object, the speed of the measurement object, etc.

[0044] The signal processing circuit 70 is configured to be able to perform signal processing. The signal processing circuit 70 is configured, for example, by a circuit that performs various types of signal processing on the signal input from the amplifier circuit 55. The signal processing circuit 70 is configured to include an arithmetic circuit, a memory circuit, etc. The signal processing circuit 70 (signal processing unit) may include a processor and a memory.

[0045] The signal processing circuit 70 can calculate the distance between the semiconductor device 1 and the measurement object by, for example, analyzing the frequency (e.g., beat frequency) of the signal S4. Furthermore, for example, the signal processing circuit 70 can calculate the speed (relative speed) of the measurement object by utilizing the Doppler shift of light.

[0046] As an example, the signal processing circuit 70 calculates the velocity of the object to be measured based on the beat frequency when the frequency of the laser light is increased over time, i.e., in the case of an up-chirp, and the beat frequency when the frequency of the laser light is decreased over time, i.e., in the case of a down-chirp.

[0047] The signal processing circuit 70 emits laser light that becomes an optical signal S1 that is frequency modulated into a triangular wave, for example, and can calculate the speed of the object to be measured, the distance to the object to be measured, etc., using the beat frequency (i.e., beat frequency) of the beat signal in each case of successive up-chirps and down-chirps.

[0048] 2, the signal processing circuit 70 includes an AD conversion circuit 71 and an arithmetic circuit 72. The AD conversion circuit 71 is configured to be able to perform AD (Analog-to-Digital) conversion, and converts an input analog signal into a digital signal. The AD conversion circuit 71 is an ADC (Analog to Digital Converter). A signal S4, which is a beat signal (interference signal), is input to the AD conversion circuit 71 from, for example, the amplifier circuit 55.

[0049] The AD conversion circuit 71 performs AD conversion processing on the signal S4, which is an analog signal input from the amplifier circuit 55. The AD conversion circuit 71 (AD conversion unit) may, for example, sample the signal S4 and convert the analog signal S4 into a digital signal. The AD conversion circuit 71 outputs the signal S4, which has been converted into a digital signal for each sampling point, to the arithmetic circuit 72.

[0050] The arithmetic circuit 72 is configured to acquire the signal S4 converted into a digital signal and perform arithmetic processing. The arithmetic circuit 72 (arithmetic unit) is configured, for example, by a logic circuit, a memory, etc. The arithmetic circuit 72 is configured to perform frequency analysis processing on the signal S4. The arithmetic circuit 72 can also be said to be an analysis unit configured to analyze the signal S4.

[0051] The arithmetic circuit 72 performs, for example, FFT (Fast Fourier Transform) on the signal S4 to calculate the distance to the measurement object, the speed of the measurement object, etc. The signal processing circuit 70 can generate a signal related to the distance to the measurement object, a signal related to the speed of the measurement object, etc., and output the signals to the outside of the semiconductor device 1.

[0052] The signal processing circuit 70 also functions as a control unit (control circuit) and is configured to be able to control each unit of the semiconductor device 1. The signal processing circuit 70 may include circuits such as a PLL (Phase Locked Loop) and a DAC (Digital to Analog Converter). The signal processing circuit 70 is configured to supply a signal for controlling the light emitting element 10 of the light source unit 200 to the light source unit 200, for example, and control the light emitting element 10.

[0053] The signal processing circuit 70 is configured to be able to control, for example, frequency modulation by the modulator 15, scanning of the optical signal by the antenna unit 30, beat signal generation processing by the detection circuit 60, AD conversion processing by the AD conversion circuit 71, etc. Furthermore, for example, the signal processing circuit 70 is configured to be able to control the supply of current to the heater 35.

[0054] 4 is a diagram showing an example of a cross-sectional configuration of a semiconductor device according to an embodiment. The semiconductor device 1 is configured using a substrate 101 containing silicon. The substrate 101 is configured by a semiconductor substrate such as an SOI (Silicon On Insulator) substrate or a silicon substrate. In the example shown in FIG. 4, the substrate 101 includes a semiconductor layer 110, a wiring layer 91, and an insulating layer 105.

[0055] The semiconductor layer 110 may be composed of, for example, a silicon layer (i.e., an active layer) on a BOX (Buried Oxide) layer in an SOI substrate. The semiconductor device 1 also has, as an example, a substrate 102 including a semiconductor layer 120 and a wiring layer 92. The semiconductor layer 120 is composed of a semiconductor substrate (e.g., a silicon substrate, an SOI substrate, etc.). The semiconductor layer 110 or the semiconductor layer 120 may be composed of another semiconductor material, or may be composed using other materials.

[0056] The semiconductor device 1 has a configuration in which an insulating layer 105, a semiconductor layer 110, a wiring layer 91, a wiring layer 92, and a semiconductor layer 120 are stacked in the Z-axis direction. As shown in Fig. 4, the direction perpendicular to the Z-axis direction is the X-axis direction, and the direction perpendicular to the Z-axis and X-axis directions is the Y-axis direction. In the following figures, directions may be indicated based on the direction of the arrow in Fig. 4.

[0057] The substrate 101 is provided with, for example, the above-mentioned light source unit 200, modulator 15, coupler 20, coupler 25, antenna unit 30, coupler 40, light receiving unit 50, etc. In the semiconductor device 1, for example, a wiring layer 91 is provided on the side opposite to the side where light is emitted by the antenna 31. It can also be said that the wiring layer 91 is provided on the side opposite to the side where light is incident. The semiconductor device 1 can also be said to be a back-illuminated device.

[0058] 4, the semiconductor layer 110 has opposing surfaces 11S1 and 11S2. The surface 11S2 is the surface opposite to the surface 11S1. A wiring layer 91 is provided on the surface 11S1 side of the semiconductor layer 110. A light-emitting element 10 and an insulating layer 105 are provided on the surface 11S2 side of the semiconductor layer 110.

[0059] The semiconductor layer 120 has opposing surfaces 12S1 and 12S2. The surface 12S2 is the surface opposite to the surface 12S1. The surface 12S1 is an element formation surface on which elements such as transistors are formed. A gate electrode, a gate insulating film (e.g., a gate oxide film), etc. may be provided on the surface 12S1. A wiring layer 92 is provided on the surface 12S1 side of the semiconductor layer 120.

[0060] The semiconductor layer 110 and the wiring layer 91 may be provided with a modulator 15, a coupler 20, an antenna unit 30, a coupler 40, a light receiving unit 50, etc. On the surface 11S1 side of the semiconductor layer 110, for example, as shown in the example in FIG. 4, the light receiving unit 50 including the light receiving element 51 (light receiving element 51a and light receiving element 51b in FIG. 1), a heater 35 of the antenna unit 30, etc. are formed.

[0061] The light receiving element 51 is configured by, for example, a germanium photodiode (GePD) and is provided on the surface 11S1 of the semiconductor layer 110. The above-mentioned amplifier circuit 55 is provided in the semiconductor layer 110 and the wiring layer 91, or in the semiconductor layer 120 and the wiring layer 92. The signal processing circuit 70 can be provided in, for example, the semiconductor layer 120 and the wiring layer 92.

[0062] The wiring layer 91 and the wiring layer 92 each include, for example, a conductor film and an insulating film, and have a plurality of wires and vias, etc. Each of the wiring layer 91 and the wiring layer 92 has a configuration in which a plurality of wires are stacked with an insulating film interposed therebetween as an interlayer insulating film, for example. The wiring layers 91 and 92 are each multi-layer wiring layers, and include, for example, two or more layers of wires, or three or more layers of wires.

[0063] Each of the wiring layers 91 and 92 is formed using a metal material such as aluminum (Al), tungsten (W), or copper (Cu). Each of the wiring layers 91 and 92 may be formed using polysilicon (Poly-Si) or other conductive materials. The interlayer insulating film is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON).

[0064] 4, the antenna 31 is provided on the semiconductor layer 110. A plurality of antennas 31 are formed along the surfaces 11S1 and 11S2 of the semiconductor layer 110. On the substrate 101, the plurality of antennas 31 are arranged, for example, lined up in the X-axis direction and the Y-axis direction.

[0065] The antenna 31 is configured, for example, by a waveguide having a plurality of grooves (recesses) provided in the semiconductor layer 110, or a waveguide provided with a plurality of holes (holes) penetrating the semiconductor layer 110. The antenna 31 can be configured by a diffraction grating provided in the waveguide.

[0066] As an example, the antenna 31 has a diffraction grating configured using a periodically formed pattern (for example, a circular pattern). Note that a lens may be disposed above the antenna unit 30 for each antenna 31 or for each set of multiple antennas 31. The antenna 31 of the antenna unit 30 can transmit and receive optical signals via the lens.

[0067] The heater 35 is configured using, for example, a resistive element (resistor). The heater 35 is provided around the switch 32 (i.e., optical switch) of the antenna unit 30 and is configured to be able to heat the switch 32 (see also FIG. 1). The heater 35 can also be provided around the antenna 31 and is configured to be able to heat the antenna 31. As an example, as schematically shown in FIG. 4, the heater 35 is electrically connected to vias and wirings of the wiring layer 91 and is configured to be able to conduct electricity.

[0068] 4, the semiconductor device 1 includes a light-emitting element 10, a waveguide 81, and a light-guiding member 85. The light-emitting element 10 is provided on the surface 11S2 side of the semiconductor layer 110. The light-emitting element 10 can be disposed on the substrate 101 so as to be located above the waveguide 81 of the semiconductor layer 110.

[0069] The light emitting element 10 is provided, for example, to be stacked on the semiconductor layer 110 so that output light (optical signal) of the light emitting element 10 is incident on the waveguide 81 and the light guiding member 85. As an example, the light emitting element 10 is disposed so as to be in contact with the waveguide 81 provided in the semiconductor layer 110, and is located above the light guiding member 85.

[0070] The waveguide 81 is, for example, a Si (silicon) waveguide, and is provided in the semiconductor layer 110. The waveguide 81 is configured to guide an input (incident) optical signal. The waveguide 81 can be provided between the light-emitting element 10 and the modulator 15, between the modulator 15 and the antenna unit 30, etc. In the example shown in FIG. 4, the waveguide 81 is configured, for example, to transmit (propagate) an optical signal from the light-emitting element 10 side to the antenna 31 side.

[0071] 4, the light-guiding member 85 is provided on the surface 11S1 side of the semiconductor layer 110. The light-guiding member 85 is provided on the substrate 101 in correspondence with the light-emitting element 10 and the waveguide 81. The light-guiding member 85 is, for example, a structure provided in the wiring layer 91, and is located below the light-emitting element 10. The light-guiding member 85 is disposed so as to face the light-emitting element 10 across the semiconductor layer 110 in which the waveguide 81 is provided.

[0072] The light guiding member 85 can be provided below the light emitting element 10 so as to follow the waveguide 81 of the semiconductor layer 110. The light guiding member 85 extends in the X-axis direction (or the Y-axis direction), for example, so as to cover at least a part of the end face of the light emitting element 10 from the surface 11S1 side of the semiconductor layer 110.

[0073] 4, the light-guiding member 85 is provided inside the wiring layer 91, and an insulating film 98 of a part of the wiring layer 91 is provided between the light-guiding member 85 and the semiconductor layer 110. Note that the light-guiding member 85 may be provided in contact with the semiconductor layer 110 (i.e., the waveguide 81) without the insulating film 98 therebetween.

[0074] The light-guiding member 85 is disposed, for example, on the opposite side of the waveguide 81 from the light-emitting element 10. The light-guiding member 85 is located adjacent to the location where the light-emitting element 10 and the waveguide 81 are connected. The connection portion between the light-emitting element 10 and the waveguide 81 is located so as to overlap the light-guiding member 85. In the semiconductor device 1, the light-guiding member 85 and the light-emitting element 10 can be located so as to sandwich the waveguide 81 therebetween.

[0075] The light-guiding member 85 is configured, for example, to have a refractive index higher than the refractive index of the material that constitutes the light-emitting element 10. The light-guiding member 85 can be made of a material that has a refractive index higher than the refractive index of the material (e.g., InP, InGaAs) that constitutes the light-emitting element 10.

[0076] The light guide member 85 (structure) may have a refractive index higher than that of the insulating film of the wiring layer 91, such as a silicon oxide film (SiO2). The light guide member 85 may also be formed using a material having a refractive index higher than that of the semiconductor layer 110.

[0077] The light guide member 85 is made of, for example, amorphous silicon or polysilicon (Poly-Si). The light guide member 85 may be made of a silicon compound. Note that the light guide member 85 may be made of other materials.

[0078] In the semiconductor device 1 according to the present embodiment, the light emitting element 10 is provided on the surface 11S2 of the semiconductor layer 110, as shown in the example of Fig. 4. This allows the light emitting element 10 to be arranged with good flatness on the substrate 101. This allows the yield of the semiconductor device 1 to be improved.

[0079] Furthermore, in the semiconductor device 1, a light-guiding member 85 having a relatively high refractive index is provided on the surface 11S1 side of the semiconductor layer 110. Therefore, the light generated by the light-emitting element 10 can be drawn toward the waveguide 81 and the light-guiding member 85 and efficiently guided toward the antenna unit 30. By providing the light-guiding member 85, it is possible to improve the light coupling efficiency. It is also possible to improve the S / N ratio of the optical signal.

[0080] In this embodiment, the light emitting element 10 is provided on the surface 11S2 side of the semiconductor layer 110, and the light guiding member 85 is provided on the surface 11S1 side of the semiconductor layer 110. This makes it possible to ensure the thickness (film thickness) and flatness of the connection portion between the light emitting element 10 and the semiconductor layer 110. This makes it possible to improve the coupling efficiency of light from the light emitting element 10 to the semiconductor layer 110 (i.e., the waveguide 81). Furthermore, it becomes possible to improve the yield of the semiconductor device 1.

[0081] As described above, the antenna 31 of the semiconductor device 1 is provided on the semiconductor layer 110. An optical signal (laser light) is input to the antenna 31 from the light-emitting element 10 via the light-guiding member 85 and the waveguide 81. The antenna can output the optical signal transmitted via the light-guiding member 85 and the waveguide 81 to the measurement object.

[0082] 4, the semiconductor device 1 may include a waveguide 82, a light-guiding member 86, and a light-guiding member 87. The waveguide 82 is made of, for example, silicon nitride (SiN). The waveguide 82 is configured to guide an input optical signal. The waveguide 82 may transmit light incident via, for example, a light-guiding member 85 and the waveguide 81.

[0083] As an example, the waveguide 82 is provided in the wiring layer 91 between the antenna 31 and the waveguide 81 optically connected to the light emitting element 10. In the example shown in Fig. 4, the waveguide 82 is disposed in the wiring layer 91, and is located below the waveguide 81 and the antenna 31. Note that the position and shape of the waveguide 82 are not limited to the example shown in the figure, and can be changed as appropriate.

[0084] The waveguide 82 is configured to have a refractive index higher than that of the insulating film of the wiring layer 91. The waveguide 82 may be made of a material having a refractive index higher than that of a silicon oxide film (SiO2). The waveguide 82 may be formed using a material having a refractive index higher than that of a silicon oxide film and lower than that of silicon.

[0085] 4, the light guiding member 86 and the light guiding member 87 are each provided on the surface 11S1 side of the semiconductor layer 110. Each of the light guiding member 86 and the light guiding member 87 is, for example, a structure provided in the wiring layer 91, and is provided around the waveguide 82.

[0086] At least a portion of the light-guiding member 86 is provided, for example, between the waveguide 81 of the semiconductor layer 110 and the waveguide 82 of the wiring layer 91. The light-guiding member 86 is formed in a region connecting the waveguide 81 and the waveguide 82, and can also be called a connecting member. The light-guiding member 86 may be provided in contact with the semiconductor layer 110 (i.e., the waveguide 81). The light-guiding member 86 may also be provided in contact with the waveguide 82.

[0087] At least a portion of the light-guiding member 87 is provided, for example, between the antenna 31 of the semiconductor layer 110 and the waveguide 82 of the wiring layer 91. The light-guiding member 87 is formed in a region connecting the waveguide 82 and the antenna 31, and can also be called a connecting member. The light-guiding member 87 may be provided in contact with the waveguide of the antenna 31. The light-guiding member 87 may also be provided in contact with the waveguide 82.

[0088] The light guiding member 86 and the light guiding member 87 are made of, for example, the same material as the light guiding member 85. The light guiding member 86 and the light guiding member 87 are each made of, for example, amorphous silicon, polysilicon, or a silicon compound. Note that the light guiding members 86 and 87 may be made of a material different from that of the light guiding member 85.

[0089] The light guiding member 86 and the light guiding member 87 may each have a refractive index higher than that of the insulating film 98 of the wiring layer 91, such as a silicon oxide film (SiO2). The light guiding member 86 and the light guiding member 87 may be formed using a material having a refractive index higher than that of the semiconductor layer 110, for example.

[0090] Laser light as an optical signal is input from the light emitting element 10 to the antenna 31 of the semiconductor device 1 via the waveguide 81, the light guiding member 86, the waveguide 82, the light guiding member 87, etc. The antenna 31 can output the laser light transmitted via the waveguide 81, the waveguide 82, etc. to a measurement target.

[0091] As described above, the semiconductor device 1 is provided with the waveguide 82 made of silicon nitride (SiN) or the like. Therefore, the optical signal transmitted from the light emitting element 10 via the waveguide 81 can be efficiently guided to the antenna unit 30. Even when the transmission distance of the optical signal is long, the provision of the waveguide 82 makes it possible to reduce the loss of light.

[0092] Furthermore, the semiconductor device 1 may be provided with light-guiding members 86 and 87. This makes it possible to suppress, for example, a decrease in coupling efficiency between the semiconductor layer 110 and the waveguide 82, thereby suppressing light loss. It is also possible to improve the S / N ratio of the optical signal.

[0093] In the semiconductor device 1 according to this embodiment, light (optical signal) can be appropriately guided from the light emitting element 10 to the antenna 31, as shown by the arrows in FIG. 5. This makes it possible to realize a semiconductor device that can improve the light utilization efficiency. For example, it makes it possible to realize a semiconductor device that has performance suitable for use as a light emitting device or a distance measuring device.

[0094] 6 is a diagram illustrating a configuration example of a semiconductor device according to an embodiment. The thickness t1 (film thickness) of the light-guiding member 85 may be, for example, in the range of 10 nm to 1000 nm. Furthermore, the thickness t1 of the light-guiding member 85 may be, for example, in the range of 50 nm to 1000 nm.

[0095] For example, the thickness t1 of the light guide member 85 may be approximately 150 nm or approximately 200 nm. The thickness t1 of the light guide member 85 may be 100 nm or more and 200 nm or less, or 100 nm or more and 300 nm or less.

[0096] Furthermore, the thickness t2 of the semiconductor layer 110 (i.e., the waveguide 81) may be 240 nm or less. For example, the thickness t2 of the semiconductor layer 110 may be in the range of 10 nm or more and 240 nm or less. By configuring the semiconductor device 1 as described above, it is possible to effectively improve the optical coupling efficiency.

[0097] Furthermore, the thickness t3 of the waveguide 82 in the Z-axis direction may be, for example, within a range of 100 nm to 600 nm. In this case, the optical coupling efficiency can be effectively improved. It is possible to reduce optical loss and improve the light utilization efficiency.

[0098] 4 and 6, the semiconductor device 1 may also include a light-shielding member 38. The light-shielding member 38 is a light-shielding portion (light-shielding film) made of a material that blocks light. For example, as in the example shown in FIG. 4, the light-shielding member 38 is provided around the antenna 31 to prevent unwanted light from entering the antenna 31.

[0099] The light-shielding member 38 is provided, for example, next to the antenna 31 on the substrate 101. As an example, the light-shielding member 38 is provided for each antenna 31, and also provided between adjacent antennas 31. The antenna unit 30 may be configured to include the light-shielding member 38. The light-shielding member 38 may also be provided around the light-receiving element 51.

[0100] The light-shielding member 38 is provided, for example, so as to extend from the insulating layer 105 to the surface 11S2 of the semiconductor layer 110. In the example shown in Fig. 4, the light-shielding member 38 is formed so as to penetrate the insulating layer 105 around the antenna 31. The light-shielding member 38 may be provided so as to surround the antenna 31 in a plan view. A predetermined potential (voltage), for example, a GND potential (ground potential), is applied to the light-shielding member 38 via wiring, vias, or the like.

[0101] The light-shielding member 38 is made of, for example, tungsten (W). The light-shielding member 38 may be made of other metal materials that block light, such as aluminum (Al) or copper (Cu). The light-shielding member 38 may be made of a metal compound. The light-shielding member 38 may be made of a material that absorbs light. The light-shielding member 38 can also be said to be a light-shielding wall that blocks incident light.

[0102] In the semiconductor device 1, the light-shielding member 38 is provided around the antenna 31, the light-receiving element 51, etc., so that it is possible to prevent unwanted light (e.g., stray light) from entering the antenna 31, the light-receiving element 51, etc. For example, it is possible to prevent ranging errors caused by the mixing of stray light components having a frequency different from the frequency of the optical signal. It is possible to improve measurement accuracy.

[0103] 7 is a diagram showing an example of a cross-sectional configuration of a semiconductor device according to an embodiment. As shown in the example of FIG. 7, a plurality of electrodes 95 are provided on wiring layer 91, and a plurality of electrodes 96 are provided on wiring layer 92. Electrodes 95 and 96 are each formed using copper (Cu), for example.

[0104] The electrodes 95 and 96 are used to bond metal electrodes together, and may also be called bonding electrodes. The electrodes 95 and 96 may be made of a metal material other than copper, such as nickel (Ni), cobalt (Co), gold (Au), or tin (Sn), or may be made of other materials.

[0105] As an example, substrate 101 and substrate 102 are bonded together by bonding between metal electrodes (electrodes 95 and 96) made of Cu, i.e., Cu-Cu bonding. Electrodes 95 and 96 electrically connect the circuits of substrate 101 and substrate 102. Note that substrate 101 and substrate 102 may be stacked together using bumps.

[0106] In the semiconductor device 1, for example, the semiconductor layer 110 in which the light emitting element 10 is arranged is thermally connected to the substrate 102 via electrodes 94, 95, and 96. As an example, as schematically shown in FIG. 7 , the semiconductor layer 110 is thermally connected to the wiring and vias of the wiring layer 92, the circuit elements of the semiconductor layer 120, and the like, via the electrodes 94, 95, and 96.

[0107] 7, the semiconductor layer 110 is thermally connected to the substrate 102 via an electrode 97. The electrode 97 is provided so as to penetrate the wiring layer 91. The electrode 97 is a through electrode made of, for example, a metal material. The electrode 97 may be made of polysilicon or may be made of other materials.

[0108] By configuring the semiconductor device 1 in this manner, the heat of the light emitting element 10 can be dissipated (released) to the substrate 102 side by the semiconductor layer 110 and the electrodes 95, 96 or the electrode 97. This makes it possible to suppress heat accumulation in the light emitting element 10, and improve the stability of the semiconductor device 1.

[0109] 8A to 8F are diagrams showing an example of a method for manufacturing a semiconductor device according to an embodiment. First, as shown in Fig. 8A, a substrate 101 is prepared, which has a semiconductor layer 110, an insulating layer 115, and another semiconductor layer 111. For example, the substrate 101 is an SOI substrate, and the insulating layer 115 is a BOX layer.

[0110] 8B, the waveguide 81, the antenna 31, etc. are formed in the semiconductor layer 110 of the substrate 101. Furthermore, light-guiding members 85, 86, 87, the waveguide 82, the light-receiving element 51, etc. are formed on the surface 11S1 side of the semiconductor layer 110. Furthermore, the heater 35, wiring, etc. are formed in this order to form the wiring layer 91.

[0111] Next, semiconductor layer 110 provided with wiring layer 91 and semiconductor layer 120 provided with wiring layer 92 are placed opposite each other, and substrate 101 and substrate 102 are bonded together as shown in Fig. 8C. Then, insulating layer 105 and semiconductor layer 111 are removed as shown in Fig. 8D.

[0112] Next, as shown in FIG. 8E, a light source unit 200 including a light emitting element 10 is disposed on the surface 11S2 of the semiconductor layer 110. Then, as shown in FIG. 8F, an insulating layer 105 is formed. Thereafter, for example, a light blocking member 38, an electrode 97, etc. are formed on the insulating layer 105. The semiconductor device 1 shown in FIG. 4 and the like can be manufactured by the manufacturing method described above. Note that the manufacturing method of the semiconductor device described above is merely an example, and other manufacturing methods may be adopted.

[0113] [Actions and Effects] The semiconductor device of this embodiment includes a semiconductor layer (semiconductor layer 110), a wiring layer (wiring layer 91) provided on the first surface side of the semiconductor layer, a light-emitting element (light-emitting element 10) provided on the second surface side opposite the first surface of the semiconductor layer, and a first light-guiding member (light-guiding member 85) provided on the first surface side of the semiconductor layer and into which light from the light-emitting element is incident.

[0114] In the semiconductor device (semiconductor device 1) according to this embodiment, the wiring layer 91 is provided on the surface 11S1 side of the semiconductor layer 110, and the light emitting element 10 is provided on the surface 11S2 side of the semiconductor layer 110. The semiconductor device 1 also has a light guiding member 85 provided on the surface 11S1 side of the semiconductor layer. This makes it possible to realize a semiconductor device that can improve light utilization efficiency.

[0115] Next, a modified example of the present disclosure will be described. In the following, the same components as those in the above embodiment will be denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

[0116] <2. Modifications> (2-1. Variation 1) In the above-described embodiment, a configuration example of the semiconductor device 1 has been described, but this is merely an example, and the configuration of the semiconductor device 1 is not limited to the above-described example. Fig. 9 is a diagram for explaining a configuration example of a semiconductor device according to Modification 1 of the present disclosure. The semiconductor device 1 may be configured without a waveguide 82, as in the example shown in Fig. 9.

[0117] The semiconductor device 1 may not have at least one of the light-guiding member 86 and the light-guiding member 87. The light-guiding member 85 may be provided in contact with the semiconductor layer 110 (i.e., the waveguide 81) as in the example shown in Fig. 10. In the example shown in Fig. 10, the light-guiding member 85 is disposed in contact with the surface 11S1 of the semiconductor layer 110.

[0118] 11 is a diagram illustrating another example of the configuration of the semiconductor device according to Modification 1. As in the example shown in Fig. 11, the semiconductor device 1 may be configured without the light-shielding member 38. Note that the light-shielding member 38 may be disposed around the light-receiving element 51 in the insulating layer 105.

[0119] (2-2. Variation 2) 12 to 14 are diagrams illustrating an example of the configuration of a semiconductor device according to Modification 2. In the above-described embodiment, an example has been described in which substrate 101 and substrate 102 are thermally connected using electrode 94 and electrode 97. Semiconductor device 1 may be configured to have only one of electrode 94 and electrode 97.

[0120] For example, as in the example shown in Fig. 12, only the electrode 94 may be disposed, and the electrode 97 may not be disposed. Also, as in the examples shown in Fig. 13 or 14, only the electrode 97 (through electrode) may be disposed, and the electrode 94 may not be disposed. In the case of this modified example, too, it is possible to dissipate heat from the light-emitting element 10 via the electrode 94 or the electrode 97. Note that the electrode 94 or the electrode 97 may be connected to the light-emitting element 10 without the semiconductor layer 110 being interposed therebetween.

[0121] (2-3. Variation 3) The semiconductor device according to the present disclosure can be applied to various devices and circuits that use light-emitting elements. For example, the semiconductor device according to the present disclosure can be applied to various light-emitting devices, distance measuring devices, etc. The semiconductor device 1 may be configured without a light-receiving element, as in the example shown in FIG. 15. The semiconductor device 1 can be configured as, for example, a light-emitting device. The semiconductor device according to the present disclosure can be applied to various electronic devices.

[0122] <3. Usage example> The above-described semiconductor device can be used in various cases for sensing light such as visible light, infrared light, ultraviolet light, and X-rays, for example, as follows. ·Digital cameras, mobile devices with camera functions, and other devices that take images for viewing purposes - Devices used for traffic purposes, such as in-vehicle sensors that take pictures of the front, rear, surroundings, and interior of a vehicle for safe driving such as automatic stopping, and for recognizing the driver's condition, surveillance cameras that monitor moving vehicles and roads, and distance measuring sensors that measure distances between vehicles. A device used in home appliances such as televisions, refrigerators, and air conditioners to capture user gestures and operate the appliances according to those gestures. -Medical and healthcare equipment, such as endoscopes and devices that take blood vessel images using infrared light - Security devices such as surveillance cameras for crime prevention and cameras for person authentication Cosmetic devices such as skin measuring devices that take pictures of the skin and microscopes that take pictures of the scalp Sports equipment such as action cameras and wearable cameras for sports purposes Agricultural equipment such as cameras for monitoring the condition of fields and crops

[0123] <4. Application Examples> (Example of application to a moving object) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0124] FIG. 16 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0125] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 16, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0126] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0127] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0128] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc., based on the received images.

[0129] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0130] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0131] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating collisions between vehicles, following based on the distance between vehicles, maintaining vehicle speed, warning of vehicle collisions, or warning of vehicle lane departure.

[0132] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0133] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0134] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to passengers in the vehicle or to the outside of the vehicle. In the example of Fig. 16, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0135] FIG. 17 is a diagram showing an example of the installation position of the imaging unit 12031.

[0136] In FIG. 17, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0137] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0138] 17 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.

[0139] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0140] For example, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on driver operation.

[0141] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0142] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the images captured by the image capturing units 12101 to 12104. The pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104, which are infrared cameras, and then performing pattern matching on a series of feature points that indicate the outline of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0143] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 of the above-described configuration. Specifically, for example, the semiconductor device 1 or the like can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it becomes possible to obtain a high-resolution captured image. It becomes possible to perform high-precision control using the captured image in the mobile object control system.

[0144] (Application example to endoscopic surgery system) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0145] FIG. 18 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0146] 18 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0147] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0148] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens towards an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0149] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected onto the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0150] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0151] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0152] The light source device 11203 is configured from a light source such as an LED (Light Emitting Diode), and supplies irradiation light to the endoscope 11100 when photographing an operation site or the like.

[0153] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiating light, magnification, focal length, etc.) of the endoscope 11100.

[0154] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0155] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical site can be configured from a white light source configured from, for example, an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, making it possible to adjust the white balance of the captured image in the light source device 11203. In this case, it is also possible to capture images corresponding to each RGB in a time-division manner by irradiating the object of observation with laser light from each RGB laser light source in a time-division manner and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0156] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0157] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may be performed using fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation can involve irradiating excitation light onto body tissues and observing the fluorescence from the tissues (autofluorescence observation), or locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0158] FIG. 19 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0159] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.

[0160] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0161] The imaging unit 11402 is configured with an imaging element. The imaging element constituting the imaging unit 11402 may be one (a so-called single-chip type) or multiple (a so-called multi-chip type). When the imaging unit 11402 is configured with a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured with a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display. 3D display enables the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured with a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0162] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0163] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0164] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0165] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0166] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0167] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0168] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0169] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0170] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data sent from the camera head 11102 .

[0171] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0172] Furthermore, the control unit 11413 causes the display device 11202 to display a captured image showing the surgical site, etc., based on the image signal that has been image processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0173] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0174] In the illustrated example, communication is performed by wire using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0175] The above describes an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. Of the configurations described above, the technology according to the present disclosure can be suitably applied to, for example, the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100. By applying the technology according to the present disclosure to the imaging unit 11402, it is possible to provide a high-definition endoscope 11100.

[0176] Although the present disclosure has been described above by giving embodiments, modifications, use examples, and application examples, the present technology is not limited to the above-described embodiments, etc., and various modifications are possible. For example, although the modifications described above have been described as modifications of the above-described embodiments, the configurations of the modifications can be combined as appropriate.

[0177] A semiconductor device according to an embodiment of the present disclosure includes a semiconductor layer, a wiring layer provided on a first surface side of the semiconductor layer, a light emitting element provided on a second surface side opposite to the first surface of the semiconductor layer, and a first light guiding member provided on the first surface side of the semiconductor layer and into which light from the light emitting element is incident. This makes it possible to realize a semiconductor device that can improve light utilization efficiency.

[0178] A distance measuring device according to an embodiment of the present disclosure includes a semiconductor layer, a wiring layer provided on a first surface side of the semiconductor layer, a light emitting element provided on a second surface side opposite the first surface of the semiconductor layer, a first light guiding member provided on the first surface side of the semiconductor layer and into which light from the light emitting element is incident, and a light receiving element provided on the first surface side of the semiconductor layer. This makes it possible to realize a distance measuring device that can improve light utilization efficiency.

[0179] The effects described in this specification are merely examples and are not limited to those described, and other effects may also be achieved. Furthermore, the present disclosure may also be configured as follows. (1) a semiconductor layer; a wiring layer provided on the first surface side of the semiconductor layer; a light emitting element provided on a second surface side opposite to the first surface of the semiconductor layer; a first light guiding member provided on the first surface side of the semiconductor layer, into which light from the light emitting element is incident; A semiconductor device comprising: (2) The first light guide member has a refractive index higher than the refractive index of the material that constitutes the light emitting element. The semiconductor device according to (1) above. (3) the wiring layer has an insulating film provided around the first light guide member, The first light guide member has a refractive index higher than that of the insulating film. The semiconductor device according to (1) or (2) above. (4) The first light guide member is made of amorphous silicon, polysilicon, or a silicon compound. The semiconductor device according to any one of (1) to (3). (5) a first waveguide provided in the semiconductor layer; an antenna provided in the semiconductor layer and capable of outputting light transmitted through the first light-guiding member and the first waveguide; The semiconductor device according to any one of (1) to (4). (6) a first waveguide provided in the semiconductor layer; a second waveguide provided in the wiring layer and capable of transmitting light incident via the first light-guiding member and the first waveguide; The semiconductor device according to any one of (1) to (5) above. (7) The second waveguide is constructed using a material having a refractive index higher than that of silicon dioxide (SiO2). The semiconductor device according to (6) above. (8) The second waveguide is made of silicon nitride. The semiconductor device according to (6) or (7) above. (9) further comprising an antenna provided on the semiconductor layer; The antenna is capable of outputting light transmitted through the first waveguide and the second waveguide. The semiconductor device according to any one of (6) to (8) above. (10) a second light guide member provided between the first surface of the semiconductor layer and the second waveguide; The second waveguide is capable of transmitting light incident via the second light-guiding member. The semiconductor device according to any one of (6) to (9) above. (11) The light emitting device further includes a phase modulator capable of modulating the phase of light emitted from the light emitting element. The semiconductor device according to any one of (1) to (10) above. (12) a light receiving element provided on the first surface side of the semiconductor layer; The semiconductor device according to any one of (1) to (11) above. (13) The semiconductor device is an FMCW type distance measuring device. The semiconductor device according to any one of (1) to (12) above. (14) The thickness of the first light guide member is 10 nm or more and 1000 nm or less. The semiconductor device according to any one of (1) to (13) above. (15) The thickness of the semiconductor layer is 240 nm or less. The semiconductor device according to any one of (1) to (14) above. (16) a first waveguide provided in the semiconductor layer; an antenna provided in the semiconductor layer and capable of outputting light transmitted through the first light-guiding member and the first waveguide; a light-shielding member provided around the antenna on the second surface side of the semiconductor layer; Further equipped The semiconductor device according to any one of (1) to (15) above. (17) a first substrate including the semiconductor layer and the wiring layer; a second substrate having a signal processing circuit and stacked on the first substrate; Further equipped The semiconductor device according to any one of (1) to (16) above. (18) a first electrode provided so as to penetrate the wiring layer; The semiconductor layer and the second substrate are thermally connected via the first electrode. The semiconductor device according to (17) above. (19) the first substrate has a second electrode; the second substrate has a third electrode bonded to the second electrode; The semiconductor layer and the second substrate are thermally connected via the second electrode and the third electrode. The semiconductor device according to (17) or (18) above. (20) a semiconductor layer; a wiring layer provided on the first surface side of the semiconductor layer; a light emitting element provided on a second surface side opposite to the first surface of the semiconductor layer; a first light guiding member provided on the first surface side of the semiconductor layer, into which light from the light emitting element is incident; a light receiving element provided on the first surface side of the semiconductor layer; A ranging device comprising: [Explanation of symbols]

[0180] 1...semiconductor device, 10...light-emitting element, 15...modulator, 20...coupler, 31...antenna, 51...light-receiving element, 81, 82...waveguide, 85, 86, 87...light-guiding member, 70...signal processing circuit

Claims

1. a semiconductor layer; a wiring layer provided on the first surface side of the semiconductor layer; a light emitting element provided on a second surface side of the semiconductor layer opposite to the first surface; a first light guiding member provided on the first surface side of the semiconductor layer, into which light from the light emitting element is incident; A semiconductor device comprising:

2. The first light guide member has a refractive index higher than the refractive index of the material that constitutes the light emitting element. The semiconductor device according to claim 1 .

3. the wiring layer has an insulating film provided around the first light guide member, The first light guide member has a refractive index higher than that of the insulating film. The semiconductor device according to claim 1 .

4. The first light guide member is made of amorphous silicon, polysilicon, or a silicon compound. The semiconductor device according to claim 1 .

5. a first waveguide provided in the semiconductor layer; an antenna provided in the semiconductor layer and capable of outputting light transmitted through the first light-guiding member and the first waveguide; The semiconductor device according to claim 1 .

6. a first waveguide provided in the semiconductor layer; a second waveguide provided in the wiring layer and capable of transmitting light incident via the first light-guiding member and the first waveguide; The semiconductor device according to claim 1 .

7. The second waveguide is made of silicon dioxide (SiO ２ ) is made of a material having a refractive index higher than that of The semiconductor device according to claim 6.

8. The second waveguide is made of silicon nitride. The semiconductor device according to claim 6.

9. further comprising an antenna provided on the semiconductor layer; The antenna is capable of outputting light transmitted through the first waveguide and the second waveguide. The semiconductor device according to claim 6.

10. a second light guide member provided between the first surface of the semiconductor layer and the second waveguide; The second waveguide is capable of transmitting light incident via the second light-guiding member. The semiconductor device according to claim 6.

11. The light emitting device further includes a phase modulator capable of modulating the phase of light emitted from the light emitting element. The semiconductor device according to claim 1 .

12. a light receiving element provided on the first surface side of the semiconductor layer; The semiconductor device according to claim 1 .

13. The semiconductor device is an FMCW type distance measuring device. The semiconductor device according to claim 1 .

14. The thickness of the first light guide member is 10 nm or more and 1000 nm or less. The semiconductor device according to claim 1 .

15. The thickness of the semiconductor layer is 240 nm or less. The semiconductor device according to claim 1 .

16. a first waveguide provided in the semiconductor layer; an antenna provided in the semiconductor layer and capable of outputting light transmitted through the first light-guiding member and the first waveguide; a light-shielding member provided around the antenna on the second surface side of the semiconductor layer; Further equipped The semiconductor device according to claim 1 .

17. a first substrate including the semiconductor layer and the wiring layer; a second substrate having a signal processing circuit and laminated on the first substrate; Further equipped The semiconductor device according to claim 1 .

18. a first electrode provided so as to penetrate the wiring layer; The semiconductor layer and the second substrate are thermally connected via the first electrode.

18. The semiconductor device according to claim 17.

19. the first substrate has a second electrode; the second substrate has a third electrode bonded to the second electrode; The semiconductor layer and the second substrate are thermally connected via the second electrode and the third electrode.

18. The semiconductor device according to claim 17.

20. a semiconductor layer; a wiring layer provided on the first surface side of the semiconductor layer; a light emitting element provided on a second surface side of the semiconductor layer opposite to the first surface; a first light guiding member provided on the first surface side of the semiconductor layer, into which light from the light emitting element is incident; a light receiving element provided on the first surface side of the semiconductor layer; A ranging device comprising:

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