Semiconductor manufacturing device

Abstract

To provide a semiconductor manufacturing device that can bond a semiconductor chip and a bonding material while maintaining the quality of both.SOLUTION: A semiconductor manufacturing device 10 includes a tool head 14 having a suction tool 22 that holds a semiconductor chip 100, a vibration source 26 that applies ultrasonic vibrations to the tool 22, and a controller 16. The controller 16 is configured to ultrasonically bond the semiconductor chip 100 and a bonding material 110, or the bonding material 110 and a carrier, by driving the vibration source 26 when the semiconductor chip 100 held by the tool head 14, the bonding material 110, and a carrier are stacked in this order.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present specification discloses a semiconductor manufacturing apparatus for manufacturing semiconductors. [Background technology]

[0002] In recent years, it has been proposed to bond a chip to a circuit board via a bonding material. The bonding material is, for example, a paste material containing nanoparticles or microparticles of a metal such as silver (Ag). In this case, the bonding material is first bonded to the bottom surface of the chip, and then the bonding material on the bottom surface of the chip is bonded to the substrate. Alternatively, the bonding material is first bonded to the top surface of the substrate, and then the chip is bonded on top of the bonding material. In this way, the chip is bonded to the substrate via the bonding material.

[0003] Many techniques have been proposed for bonding a bonding material to a chip. For example, Patent Document 1 discloses a technique in which a semiconductor element and a support member are stacked via a metal paste layer, and the metal paste layer is heated and sintered. In Patent Document 1, a penetrating member is provided in the metal paste layer prior to sintering, and lateral ultrasonic vibrations are applied to the metal paste layer via the penetrating member. This configuration removes voids in the metal paste layer. Furthermore, Patent Document 2 discloses a technique in which ultrasonic vibrations are applied to a collet to remove voids in the bonding material. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 07034105 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-161159 [Patent Document 3] Japanese Patent Publication No. 2020-161751 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in Patent Documents 1 and 2, the semiconductor chip is heated to bond the bonding material to the semiconductor chip and the substrate, which not only takes time for the bonding process but also poses the risk of the semiconductor chip or the bonding material being deteriorated by the heat.

[0006] Furthermore, Patent Document 3 discloses a technology that uses ultrasonic vibrations when joining two components. However, Patent Document 3 is a technology for joining bumps of a semiconductor chip to a substrate or another semiconductor chip, not a joining material.

[0007] In other words, there has been no technology in the past that can bond a semiconductor chip and a bonding material while maintaining the quality of the two. Therefore, this specification discloses a semiconductor manufacturing apparatus that can bond a semiconductor chip and a bonding material while maintaining the quality of the two. [Means for solving the problem]

[0008] The semiconductor manufacturing apparatus disclosed in this specification comprises a tool head having a tool for holding a chip, a vibration source for applying ultrasonic vibrations to the tool, and a controller, wherein the controller drives the vibration source while the chip held by the tool head, a bonding material, and a carrier are stacked in this order, thereby ultrasonically bonding the chip and the bonding material, or the bonding material and the carrier.

[0009] In this case, the vibration source may apply ultrasonic vibration to the tool in a direction parallel to the top surface of the chip.

[0010] The tool may further include a first adjustment unit that slides the tool head in a first direction parallel to the top surface of the chip, and the vibration source vibrates the tool in a direction parallel to the first direction.

[0011] The controller may apply the ultrasonic vibration to the tip continuously for a specified reference bonding time while the tip is in contact with the bonding material, and the reference bonding time may be less than one second.

[0012] Furthermore, the chip may not be heated during the period in which the chip and the bonding material, or the bonding material and the carrier, are bonded to each other.

[0013] In addition, the bonding material may be bonded to the bottom surface of the chip in advance, the carrier may be a substrate, and the controller may be configured to ultrasonically bond the bonding material to the substrate by driving the vibration source while the bonding material is in contact with the substrate.

[0014] Furthermore, the device may further include a stage that supports a transfer sheet, the transfer sheet having a release sheet that functions as the carrier and a layer of bonding material, and the stage may have a support layer that contacts the carrier and is made of a rigid body.

[0015] The support may be a substrate, and the bonding material may be applied to the substrate in advance. [Effects of the Invention]

[0016] According to the technology disclosed in this specification, the chip and the bonding material are bonded together using ultrasonic vibrations, so that the chip and the bonding material can be bonded together while maintaining their quality. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 2 is a schematic diagram showing the configuration of a manufacturing apparatus. [Figure 2] 1A to 1C are schematic diagrams illustrating the manufacturing process of a semiconductor device. [Figure 3] 10A to 10C are schematic diagrams illustrating the manufacturing process of another semiconductor device. [Figure 4] 1 is a schematic diagram showing a conventional semiconductor manufacturing process. [Figure 5] 10A to 10C are schematic diagrams illustrating the manufacturing process of another semiconductor device. [Figure 6] 1 is a schematic diagram showing a conventional semiconductor manufacturing process. DETAILED DESCRIPTION OF THE INVENTION

[0018] The configuration of the manufacturing apparatus 10 will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing the configuration of the manufacturing apparatus 10. Note that in FIG. 1, the dimensional ratios of the components have been significantly altered from their actual dimensional ratios to ensure clarity. In particular, the thickness of the bonding material 110 relative to the semiconductor chip 100 is shown to be significantly larger than it actually is. In reality, for example, when one side of the semiconductor chip 100 is several millimeters, the thickness of the bonding material 110 is several tens of micrometers or around 100 micrometers.

[0019] The manufacturing apparatus 10 is an apparatus for manufacturing semiconductors, and is an apparatus for bonding a semiconductor chip 100 and a bonding material 110. The manufacturing apparatus 10 includes a stage 12, a tool head 14, and a controller 16. A carrier 120 is placed on the stage 12. The carrier 120 is a member that ultimately supports the bonding material 110 or the semiconductor chip 100. In the example of FIG. 1, the carrier 120 is a substrate 122. The semiconductor chip 100 is mechanically and electrically bonded to the substrate 122 via the bonding material 110. A plurality of suction holes (not shown) are formed in the surface of the stage 12. The substrate 122 is suction-held to the stage 12 through the suction holes.

[0020] A bonding material 110 is bonded in advance to the back surface of the semiconductor chip 100 (the surface facing downward in FIG. 1). The bonding material 110 is, for example, a thin film made of metal. The bonding material 110 is, for example, a film-like sintering bonding composition containing at least conductive metal-containing sinterable particles and a binder component. The sinterable particles are particles that contain a conductive metal element and can be sintered. The sinterable particles are made of, for example, gold, silver, copper, palladium, tin, nickel, or an alloy of two or more metals selected from these groups. The bonding material 110 is in a fluid paste state before drying and solidifies when dried.

[0021] The tool head 14 includes a suction tool 22 that holds the semiconductor chip 100 by suction and adjustment units 30, 32, and 34 that adjust the position and orientation of the suction tool 22. The θ adjustment unit 30 is located directly above the suction tool 22 and rotates the suction tool 22 around a vertical axis. The Z adjustment unit 32 slides the suction tool 22 vertically together with the θ adjustment unit 30. The Y adjustment unit 34 slides the suction tool 22 horizontally, i.e., in a direction parallel to the surface of the semiconductor chip 100, together with the Z adjustment unit 32 and the θ adjustment unit 30. Each of these adjustment units 30, 32, and 34 has a power source, such as a motor, and changes the position and orientation of the suction tool 22 in response to commands from the controller 16. In addition to these three adjustment units 30, 32, and 34, the manufacturing apparatus 10 may also include an adjustment unit that slides the suction tool 22 in the X direction. Alternatively, a movement mechanism may be provided on the stage 12, which slides the support 120 in the X direction instead of the suction tool 22. In either case, the suction tool 22 is capable of sliding relative to the support 120 in the vertical and horizontal directions.

[0022] Suction holes (not shown) are formed on the end surface of the suction tool 22. The semiconductor chip 100 is suction-held by the suction tool 22 through the suction holes. Then, the suction tool 22 moves while suction-holding the semiconductor chip 100, whereby the suction tool 22 is transported.

[0023] A first camera 36 is provided near the suction tool 22. The first camera 36 is attached to the Z adjustment unit 32 and moves horizontally together with the Z adjustment unit 32. The first camera 36 captures an image of the substrate 122. The controller 16 determines the relative positional relationship between the substrate 122 and the suction tool 22 in the horizontal direction based on the image obtained by the first camera 36. In addition, a second camera 38 is provided at a position away from the stage 12. The second camera 38 captures an image of the suction tool 22 from below. The controller 16 determines the position and orientation of the semiconductor chip 100 held by the suction tool 22 relative to the suction tool 22 based on the image obtained by the second camera 38.

[0024] A vibration source 26 is attached to the suction tool 22. The vibration source 26 applies ultrasonic vibrations to the suction tool 22 and, ultimately, to the semiconductor chip 100 held by the suction tool 22. The vibration source 26 has, for example, an ultrasonic vibration element and an AC power supply. The ultrasonic vibration element generates vibrations upon receiving a drive signal, which is a voltage signal. This ultrasonic vibration element has, for example, lead zirconate titanate (commonly known as PZT) that vibrates upon receiving an AC voltage, and is a bolt-tightened Langevin-type vibrator (commonly known as a BLT or BL vibrator) in which the PZT is sandwiched between metal blocks and tightened with screws (bolts) to apply pressure.

[0025] When the vibration source 26 is driven, it applies ultrasonic vibrations to the suction tool 22 in the Y direction, i.e., in a direction parallel to the top surface of the semiconductor chip 100. At this time, the θ adjustment unit 30 and the Z adjustment unit 32 together with the suction tool 22 also vibrate in the Y direction along the guide rail of the Y adjustment unit 34. The controller 16, which will be described later, drives the vibration source 26 while the semiconductor chip 100 is in contact with the bonding material 110 to apply ultrasonic vibrations to the semiconductor chip 100. Then, the semiconductor chip 100 is ultrasonically bonded to the bonding material 110 by this ultrasonic vibration.

[0026] The controller 16 controls the operation of each part of the manufacturing apparatus 10. For example, the controller 16 controls the movement of the suction tool 22 and the ON / OFF of the vibration source 26. The controller 16 is physically a computer having a processor 40 and a memory 42. Although the controller 16 is illustrated in FIG. 1 as a single computer, the controller 16 may be configured by combining multiple physically separated computers.

[0027] Next, the flow of manufacturing a semiconductor using the manufacturing apparatus 10 will be described. Fig. 2 is a schematic diagram showing the flow of manufacturing a semiconductor. In this case, a bonding material 110 is bonded to the bottom surface of the semiconductor chip 100 in advance. The procedure for bonding the semiconductor chip 100 and the bonding material 110 will be described later. The substrate 122 is transported to the stage 12 by a transport mechanism (not shown).

[0028] After receiving the semiconductor chip 100 from a chip supply source (not shown), the suction tool 22 moves to a position directly above the substrate 122, as shown in the upper part of FIG. 2. In this state, the controller 16 drives the Z adjustment unit 32 to ground the semiconductor chip 100 held by the suction tool 22 to the bonding material 110. To detect this grounding, a load sensor that detects the load acting on the suction tool 22 may be provided in the tool head 14. Alternatively, the grounding may be detected based on a change in the current supplied to a motor mounted on the Z adjustment unit 32.

[0029] In either case, when the controller 16 detects grounding, it further lowers the suction tool 22 a small distance, as shown in the middle of FIG. 2, causing the semiconductor chip 100 to pressurize the bonding material 110. Furthermore, in parallel with the pressing of the bonding material 110, the controller 16 drives the vibration source 26 to apply ultrasonic vibrations to the suction tool 22 and, ultimately, the semiconductor chip 100. This generates heat and stress at the interface between the bottom surface of the bonding material 110 bonded to the semiconductor chip 100 and the substrate 122. This then ultrasonically bonds the bonding material 110 to the substrate 122. The amplitude and frequency of the ultrasonic vibrations may be fixed at predetermined values ​​or may be changed depending on the situation. For example, at least one of the amplitude and frequency of the ultrasonic vibrations may be changed depending on the type of bonding material 110. Furthermore, the applied ultrasonic vibrations may be constant or gradually changed during one bonding session. For example, at least one of the amplitude and frequency of the ultrasonic vibrations may be changed over time.

[0030] The controller 16 continues to apply pressure to the bonding material 110 and apply ultrasonic vibrations until a predetermined reference bonding time tw has elapsed. When the reference bonding time tw has elapsed, the controller 16 determines that the ultrasonic bonding is complete and stops the vibration source 26.

[0031] Here, the reference bonding time tw is a time that includes a small margin of time required for ultrasonic bonding, and is, for example, a time that is determined in advance by experiment or simulation. The reference bonding time tw may be a fixed value that remains constant, or may be a variable value that varies depending on conditions. For example, the reference bonding time tw may be varied depending on the temperature, the thickness of the bonding material 110, the type of semiconductor chip 100, or the type of bonding material 110. In the above example, the timing of bonding completion is managed by elapsed time. However, the state of the semiconductor chip 100 or the bonding material 110 may be detected by a sensor, and the completion of bonding may be determined based on the detection result. For example, the temperature or hardness of the bonding material 110 may be detected by some kind of sensor, and the completion of bonding may be determined based on the result.

[0032] In either case, once bonding is complete, the controller 16 releases the suction tool 22 from suctioning the semiconductor chip 100, and drives the Z adjustment unit 32 to raise the suction tool 22. Then, the controller 16 obtains a new semiconductor chip 100 with the suction tool 22, and again performs the bonding process with the bonding material 110. Thereafter, the controller 16 sequentially repeats the bonding with the bonding material 110 in the same procedure.

[0033] As is clear from the above description, in the above example, the bonding material 110 is bonded to the substrate 122 by using ultrasonic vibrations. The reason for using ultrasonic vibrations in this way will be explained in comparison with the prior art.

[0034] Conventionally, the bonding material 110 has been bonded by heating and pressurizing the semiconductor chip 100 to form a thermoeutectic bond. In this case, there is a risk that the semiconductor chip 100 and the bonding material 110 may be deteriorated by heat. In addition, when heating and pressurizing, it takes several seconds to complete the bonding, which increases the time required to manufacture the semiconductor.

[0035] On the other hand, when ultrasonic vibrations are used, the semiconductor chip 100 is not heated, and the bonding material 110 is bonded to the substrate 122 while remaining at room temperature. As a result, when ultrasonic vibrations are used, deterioration of the semiconductor chip 100 and the bonding material 110 due to heat can be effectively prevented, resulting in a higher quality semiconductor. Furthermore, when ultrasonic vibrations are used, the time required for bonding can be significantly reduced compared to when using thermal eutectic bonding. Specifically, the application time of ultrasonic vibrations can be less than 1 second, for example, approximately 250 μsec. As a result, the use of ultrasonic vibrations can significantly reduce the manufacturing time of semiconductors.

[0036] Next, another manufacturing apparatus 10 will be described with reference to Fig. 3. Fig. 3 is a diagram showing the manufacturing of a semiconductor in another manufacturing apparatus 10. This manufacturing apparatus 10 has a stage 12, a tool head 14, and a controller 16, similar to the manufacturing apparatus 10 in Fig. 1. However, the manufacturing apparatus 10 in Fig. 3 manufactures, as a semiconductor, a semiconductor chip 100 before being bonded to a substrate 122, i.e., a stack in which a bonding material 110 is bonded to the bottom surface of the semiconductor chip 100.

[0037] In this case, the bonding material 110 is prepared in the form of a transfer sheet 126. The transfer sheet 126 has a release sheet 124, which is the carrier 120, and a layer of the bonding material 110. The transfer sheet 126, in which the release sheet 124 and the bonding material 110 are laminated, is placed on the stage 12. In the transfer sheet 126, the bonding material 110 may have cuts 128 formed in advance in accordance with the shape of the semiconductor chip 100. For example, if the semiconductor chip 100 is a rectangle of a predetermined size, the bonding material 110 may have cuts 128 formed in a grid pattern so that rectangles of the predetermined size are aligned.

[0038] A support layer 18 is provided on the upper surface of the stage 12 to support the transfer sheet 126. The support layer 18 is made of a rigid material such as a metal such as stainless steel or aluminum, or ceramic. In addition, a plurality of suction holes (not shown) are formed in the surface of the stage 12, and the transfer sheet 126 is held on the upper surface of the stage 12 by suction.

[0039] The stage 12 is further provided with clamps 20. The clamps 20 press the ends of the transfer sheet 126 against the upper surface of the stage 12, thereby fixing the ends of the transfer sheet 126 to the stage 12. In the illustrated example, the clamps 20 press the right and left ends of the transfer sheet 126 against the stage 12 to fix them.

[0040] When manufacturing a semiconductor (i.e., a laminate) in such manufacturing apparatus 10, controller 16 causes semiconductor chip 100 to be held by suction with suction tool 22, and moves suction tool 22 to directly above the intended bonding area of ​​transfer sheet 126. The upper part of Fig. 3 shows this state.

[0041] Thereafter, the semiconductor chip 100 is gradually lowered together with the suction tool 22 toward the transfer sheet 126. When the semiconductor chip 100 touches the transfer sheet 126 as a result of the lowering, the controller 16 applies pressure to the semiconductor chip 100 to press the semiconductor chip 100 against the bonding material 110. In this state, the controller 16 also drives the vibration source 26 to apply ultrasonic vibration to the semiconductor chip 100. The middle part of FIG. 3 shows this state.

[0042] By applying ultrasonic vibrations to the semiconductor chip 100, the bonding material 110 is ultrasonically bonded to the semiconductor chip 100. Once the bonding material 110 is bonded to the semiconductor chip 100, the controller 16 raises the suction tool 22 while maintaining suction of the semiconductor chip 100 by the suction tool 22. The controller 16 then moves the suction tool 22 to transport the stack in which the semiconductor chip 100 and the bonding material 110 are bonded to a desired position. Thereafter, the same procedure is repeated to manufacture stacks.

[0043] Here, even when manufacturing such a laminate, conventionally, the bonding material 110 has often been bonded using heat and pressure rather than ultrasonic waves. That is, as shown in the upper part of FIG. 4 , conventionally, the semiconductor chip 100 has been brought into contact with the bonding material 110, and the semiconductor chip 100 has been heated and pressurized. Furthermore, conventionally, the transfer sheet 126 has often notched the bonding material 110, and highly flexible rubber has been used for the support layer 18. With this configuration, when the semiconductor chip 100 is pressed against the transfer sheet 126, the bonding material 110 is pressed deeply together with the semiconductor chip 100, and the bonding material 110 is torn off in the shape of the semiconductor chip 100.

[0044] However, in the conventional technology, the bonding material 110 is mechanically torn off by the semiconductor chip 100. In this case, the bonding material 110 cannot be cut into the appropriate shape, and the bonding material 110 bonded to the semiconductor chip 100 may be partially chipped. Furthermore, in the case of thermal eutectic bonding, as shown in the lower part of Figure 3, the bonding material 110 bonded to the semiconductor chip 100 is prone to having rounded or chipped corners (fillets) due to the influence of heat, etc. Such chipping or rounded shapes in the bonding material 110 can cause defects in later semiconductor manufacturing processes.

[0045] On the other hand, when the bonding material 110 is ultrasonically bonded instead of thermoeutectic bonding, as in this example, the rounded shape described above is effectively prevented. Furthermore, in this example, a rigid body is used as the support layer 18, and the bonding material 110 is pre-formed with a notch 128. This effectively prevents the bonding material 110 from breaking in an unintended shape. Furthermore, in this example, the semiconductor chip 100 is not heated throughout the entire process, so that, similar to the manufacturing apparatus 10 of FIG. 1, heat-induced deterioration of the semiconductor chip 100 and the bonding material 110 can be effectively prevented, and the time required for bonding can be significantly reduced.

[0046] 1, i.e., the semiconductor chip 100 bonded with the bonding material 110, may be manufactured by the manufacturing apparatus 10 of FIG. 3 or by another apparatus. In other words, in the manufacturing apparatus of FIG. 1, the method of bonding the semiconductor chip 100 and the bonding material 110 is not particularly limited as long as the substrate 122 and the bonding material 110 are bonded together by ultrasonic waves.

[0047] Next, another manufacturing apparatus 10 will be described with reference to Fig. 5. Fig. 5 is a diagram showing the state of semiconductor manufacturing in another manufacturing apparatus 10. This manufacturing apparatus 10 has a stage 12, a tool head 14, and a controller 16, similar to the manufacturing apparatus 10 in Fig. 1. However, in the manufacturing apparatus 10 in Fig. 5, the bonding material 110 is provided in advance on a substrate 122, not on a semiconductor chip 100.

[0048] 5, bonding material 110 is placed in advance on the upper surface of substrate 122 at a location where semiconductor chip 100 is to be mounted. The bonding material 110 is applied to substrate 122 using a nozzle or the like while in a fluid state, and then dried and solidified.

[0049] The controller 16 drives the vibration source 26 while the semiconductor chip 100 is grounded to the bonding material 110. This generates thermal stress at the interface between the bottom surface of the semiconductor chip 100 and the bonding material 110. This thermal stress then ultrasonically bonds the semiconductor chip 100 to the bonding material 110.

[0050] Fig. 6 is a schematic diagram showing the state of semiconductor manufacturing by the manufacturing apparatus 10 of Fig. 5. As shown in the upper part of Fig. 6, the suction tool 22 moves to directly above the substrate 122 while suction-holding the semiconductor chip 100. In this state, the controller 16 lowers the semiconductor chip 100 until it detects that the semiconductor chip 100 is grounded.

[0051] When the controller 16 detects grounding, it further lowers the suction tool 22 a small distance, causing the semiconductor chip 100 to pressurize the bonding material 110, as shown in the middle part of FIG. 6. In parallel with the pressing of the bonding material 110, the controller 16 drives the vibration source 26 to apply ultrasonic vibrations to the suction tool 22 and, ultimately, the semiconductor chip 100. This causes the semiconductor chip 100 to be ultrasonically bonded to the bonding material 110. When the bonding is complete, the controller 16 releases the suction tool 22 from suctioning the semiconductor chip 100, as shown in the bottom part of FIG. 6, and drives the Z adjustment unit 32 to raise the suction tool 22.

[0052] In this case, the bonding material 110 and the semiconductor chip 100 are bonded using ultrasonic waves, which effectively prevents deterioration of the semiconductor chip 100 and the bonding material 110. Furthermore, the time required for bonding can be significantly reduced compared to conventional techniques that use heating for bonding.

[0053] Note that the configurations described so far are merely examples, and other configurations may be changed as appropriate as long as the configuration described in claim 1 is included. For example, in the description so far, ultrasonic vibrations are applied to the suction tool 22 in a direction parallel to the top surface of the semiconductor chip 100. However, the direction of the ultrasonic vibrations may be changed as appropriate; for example, ultrasonic vibrations may be applied in a direction parallel to the thickness direction of the semiconductor chip 100. The configurations of the tool head 14 and the stage 12 may also be changed as appropriate. For example, a heater may be mounted on the tool head 14, and heat may be applied to the semiconductor chip 100 in parallel with the ultrasonic vibrations. [Explanation of symbols]

[0054] 10 manufacturing apparatus, 12 stage, 14 tool head, 16 controller, 18 support layer, 20 clamp, 22 suction tool, 26 vibration source, 30 adjustment unit, 30 θ adjustment unit, 32 Z adjustment unit, 32 adjustment unit, 34 adjustment unit, 34 Y adjustment unit, 36 first camera, 38 second camera, 40 processor, 42 memory, 100 semiconductor chip, 110 bonding material, 120 carrier, 122 substrate, 124 release sheet, 126 transfer sheet, 128 notch.

Claims

1. a tool head having a tool for holding a tip; a vibration source that applies ultrasonic vibrations to the tool; A controller; wherein the controller drives the vibration source in a state in which the tip held by the tool head, the bonding material, and the carrier are stacked in this order, thereby ultrasonically bonding the tip and the bonding material, or the bonding material and the carrier. A semiconductor manufacturing device characterized by:

2. 2. The semiconductor manufacturing apparatus according to claim 1, The semiconductor manufacturing apparatus is characterized in that the vibration source applies ultrasonic vibration to the tool in a direction parallel to the upper surface of the chip.

3. 3. The semiconductor manufacturing apparatus according to claim 2, a first adjustment unit configured to slide the tool head in a first direction parallel to the top surface of the chip; the vibration source vibrates the tool in a direction parallel to the first direction; A semiconductor manufacturing device characterized by:

4. 2. The semiconductor manufacturing apparatus according to claim 1, the controller applies the ultrasonic vibration to the tip continuously for a specified reference bonding time while the tip is in contact with the bonding material; the reference bonding time is less than 1 second; A semiconductor manufacturing device characterized by:

5. 2. The semiconductor manufacturing apparatus according to claim 1, A semiconductor manufacturing apparatus, characterized in that the chip is not heated during the period in which the chip and the bonding material, or the bonding material and the carrier, are bonded.

6. 2. The semiconductor manufacturing apparatus according to claim 1, The bonding material is bonded to the bottom surface of the chip in advance, the support is a substrate, The controller is configured to ultrasonically bond the bonding material to the substrate by driving the vibration source while the bonding material is in contact with the substrate. A semiconductor manufacturing device characterized by:

7. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising: A stage for supporting a transfer sheet is provided, the transfer sheet has a release sheet that functions as the carrier and a layer of the bonding material, the stage has a support layer that is in contact with the support body and is made of a rigid body; A semiconductor manufacturing device characterized by:

8. 2. The semiconductor manufacturing apparatus according to claim 1, the support is a substrate, The bonding material is applied to the substrate in advance. A semiconductor manufacturing device characterized by:

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