Display Panel
The display panel's innovative light-receiving device, featuring parallel-connected light-receiving elements with shared electrodes and insulating layers, addresses the low signal issue, improving sensitivity and simplifying structure for enhanced optical fingerprint detection.
Patent Information
- Application Number
- JP2023568103
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-11-23
- Filing Date
- 2023-06-29
- Publication Date
- 2025-01-22
- Estimated Expiration
- 2043-06-29
AI Technical Summary
The low area of the light-receiving element in display panels results in a low amount of electrical signals, affecting detection sensitivity, particularly in optical fingerprint authentication systems.
The display panel incorporates a light-receiving device with a switching element and two light-receiving elements, each connected in parallel, sharing a common electrode layer and separated by an insulating layer to enhance light-receiving area and reduce potential barriers, allowing electron tunneling for improved signal generation.
This design increases the light-receiving area and electrical signal amount, enhancing detection sensitivity while simplifying the film layer structure and improving light-receiving performance.
Smart Images

Figure 2025501428000001_ABST
Abstract
Description
[Technical field]
[0001] The present application relates to the field of display technology, and in particular to display panels. [Background technology]
[0002] Fingerprint authentication has already become a function that is equipped on most display terminals such as mobile phones, tablets, and notebook computers. Currently, fingerprint authentication on display devices is shifting from capacitive fingerprint authentication to optical fingerprint authentication. Optical fingerprint authentication uses the refraction and reflection of light to image a user's fingerprint, and then recognizes the fingerprint features through image authentication. Optical fingerprint authentication has the characteristics of high image resolution and relatively easy image authentication, and can be provided below the display screen to form a bottom-of-screen fingerprint authentication.
[0003] In the conventional light receiving device, the light receiving element detects the light beam, and the light receiving element is a semiconductor device that converts the received light signal into an electrical signal. However, with the improvement of pixel resolution, the area of the light receiving element is compressed by the in-plane light emitting unit, which causes the problem of low photoelectric signal amount and affects the detection sensitivity. Summary of the Invention [Problem to be solved by the invention]
[0004] The present application provides a display panel for solving the technical problem that the amount of electric signal is reduced due to the small area of the light receiving element, which affects detection sensitivity. [Means for solving the problem]
[0005] The present application provides a display panel including at least one light receiving device including a switching element, a first light receiving element and a second light receiving element, the display panel further comprising: A substrate; a first conductive layer provided on the substrate and including a first electrode and a second electrode connected to each other; a light receiving layer including a first light receiving section provided in correspondence with the first electrode and a second light receiving section provided in correspondence with the second electrode, the first light receiving section being provided on a side of the first conductive layer farther from the substrate and spaced apart from each other, the light receiving layer including a metal oxide semiconductor; an insulating layer provided between the first conductive layer and the light receiving layer; a second conductive layer provided on a side of the light receiving layer farther from the substrate, the second conductive layer including a first protective electrode electrically connected to the first light receiving portion and a second protective electrode electrically connected to the second light receiving portion; a third conductive layer provided on a side of the second conductive layer farther from the substrate, the third conductive layer including a source and a drain of the switching element, the first protective electrode and the second protective electrode both being electrically connected to the source or the drain of the switching element; Here, the first light receiving element includes the first electrode, the first light receiving portion, and the first protecting electrode, and the second light receiving element includes the second electrode, the second light receiving portion, and the second protecting electrode.
[0006] Preferably, in some embodiments of the present application, the display panel further comprises: The switching element includes a first active portion provided between the substrate and the first conductive layer, the first active portion including a first active layer including a polysilicon semiconductor or a metal oxide semiconductor, the source and drain of the switching element being both electrically connected to the first active portion.
[0007] Preferably, in some embodiments of the present application, the light receiving device further comprises a storage capacitor; the first conductive layer further includes a first capacitor electrode of the storage capacitor, the first capacitor electrode being electrically connected to both the first electrode and the second electrode; The third conductive layer further includes a second capacitor electrode of the storage capacitor, the second capacitor electrode being electrically connected to both the first shielding electrode and the second shielding electrode, and the second capacitor electrode being disposed to at least partially overlap the first capacitor electrode.
[0008] Preferably, in some embodiments of the present application, the display panel further includes a fourth conductive layer including a conductive portion such that a positive projection of the conductive portion onto the substrate partially overlaps with a positive projection of the first electrode and / or the second electrode onto the substrate.
[0009] Preferably, in some embodiments of the present application, the electron mobility of the metal oxide semiconductor of the light receiving layer is 10 cm 2 / Vs or more, and the thickness of the insulating layer is 5 nm to 15 nm.
[0010] Preferably, in some embodiments of the present application, the display panel further includes a pixel driving circuit including a first driving transistor and a second driving transistor; The display panel further comprises: a second active layer provided between the substrate and the light receiving layer, the second active layer including a second active portion of the first driving transistor, the second active portion including a polysilicon semiconductor; a third active layer provided between the second active layer and the light receiving layer, the third active layer including a third active portion of a second driving transistor, the third active portion including a metal oxide semiconductor; a conductive layer provided between the second active layer and the third active layer, the conductive layer including a second gate of the first driving transistor, the second gate being provided to at least partially overlap the second active portion; The second conductive layer further includes a third gate of the second driving transistor, the third gate being disposed to at least partially overlap the third active portion.
[0011] Preferably, in some embodiments of the present application, the first active portion includes a polysilicon semiconductor, The second active layer further includes the first active portion, and the conductive layer further includes a first gate of the switching element, the first gate being provided to at least partially overlap the first active portion.
[0012] Preferably, in some embodiments of the present application, the first active portion includes a metal oxide semiconductor, The third active layer further includes the first active portion, the conductive layer further includes a fourth gate of the switching element, and the second conductive layer further includes a first gate of the switching element, the fourth gate being arranged to at least partially overlap the first active portion, and the first gate being arranged to at least partially overlap the first active portion.
[0013] Preferably, in some embodiments of the present application, the display panel further includes a plurality of light emitting units arranged in a plurality of rows along a first direction and in a plurality of columns along a second direction; Here, a plurality of intersection regions are formed between the plurality of rows of the light-emitting units and the plurality of columns of the light-emitting units, and each of the intersection regions is provided with at most one of the first light-receiving elements or one of the second light-receiving elements.
[0014] Preferably, in some embodiments of the present application, the first light receiving element and the second light receiving element are respectively located within two adjacent intersection areas, and the two adjacent intersection areas are located on the same side of the same light emitting unit.
[0015] Preferably, in some embodiments of the present application, the display panel includes a plurality of the light receiving devices, wherein the first light receiving elements and the second light receiving elements located in the same row are alternately arranged, the first light receiving elements and the second light receiving elements located in the same column are alternately arranged, and each of the first light receiving elements is connected in parallel to the adjacent second light receiving element located in the same row and on the same side, or each of the first light receiving elements is connected in parallel to the adjacent second light receiving element located in the same column and on the same side, Alternatively, the first light receiving elements and the second light receiving elements located in the same row are arranged alternately, and those located in the same column are all the first light receiving elements or the second light receiving elements, and each of the first light receiving elements is connected in parallel to the adjacent second light receiving element located in the same row and on the same side.
[0016] Preferably, in some embodiments of the present application, the light-receiving device further includes a third light-receiving element; Here, the third light receiving element includes a third electrode, a third protective electrode, and a third light receiving portion located between the third electrode and the third protective electrode, the third electrode and the first electrode are located in the same layer and are connected to each other, the third light receiving portion and the first light receiving portion are located in the same layer and are provided apart from each other, and the third protective electrode is connected to the source or the drain, The first light receiving element, the second light receiving element, and the third light receiving element are respectively located within the three intersection regions at the three vertices of the same light emitting unit.
[0017] An embodiment of the present application further relates to a display panel including at least one light receiving device including a switching element, a first light receiving element and a second light receiving element, the display panel further comprising: A substrate; a first conductive layer provided on the substrate and including a first electrode and a second electrode connected to each other; a light receiving layer including a first light receiving section provided in correspondence with the first electrode and a second light receiving section provided in correspondence with the second electrode, the first light receiving section being provided on a side of the first conductive layer farther from the substrate and spaced apart from each other, the light receiving layer including a metal oxide semiconductor; an insulating layer provided between the first conductive layer and the light receiving layer; a second conductive layer provided on a side of the light receiving layer farther from the substrate, the second conductive layer including a first protective electrode electrically connected to the first light receiving portion and a second protective electrode electrically connected to the second light receiving portion; a third conductive layer provided on a side of the second conductive layer farther from the substrate, the third conductive layer including a source and a drain of the switching element, the first protective electrode and the second protective electrode both being electrically connected to the source or the drain of the switching element; the first light receiving element includes the first electrode, the first light receiving portion, and the first protecting electrode, and the second light receiving element includes the second electrode, the second light receiving portion, and the second protecting electrode, The display panel further comprises: a first active layer provided between the substrate and the first conductive layer, the first active layer including a first active portion of the switching element, the source and drain of the switching element being each electrically connected to the first active portion; The display panel further includes a plurality of light emitting units arranged in a plurality of rows along a first direction and in a plurality of columns along a second direction; A plurality of intersection regions are formed between the rows of the light emitting units and the columns of the light emitting units, and each of the intersection regions is provided with at most one of the first light receiving element or one of the second light receiving element.
[0018] Preferably, in some embodiments of the present application, the light receiving device further comprises a storage capacitor including a first capacitor electrode and a second capacitor electrode arranged to at least partially overlap each other; the first capacitor electrode is electrically connected to both the first electrode and the second electrode; The second capacitor electrode is electrically connected to both the first shielding electrode and the second shielding electrode, and the second capacitor electrode is disposed to at least partially overlap the first capacitor electrode.
[0019] Preferably, in some embodiments of the present application, the display panel further includes a fourth conductive layer including a conductive portion such that a positive projection of the conductive portion onto the substrate partially overlaps with a positive projection of the first electrode and / or the second electrode onto the substrate.
[0020] Preferably, in some embodiments of the present application, the electron mobility of the metal oxide semiconductor of the light receiving layer is 10 cm 2 / Vs or more, and the thickness of the insulating layer is 5 nm to 15 nm.
[0021] Preferably, in some embodiments of the present application, the display panel further includes a pixel driving circuit including a first driving transistor and a second driving transistor; The display panel further comprises: a second active layer provided between the substrate and the light receiving layer, the second active layer including a second active portion of the first driving transistor, the second active portion including a polysilicon semiconductor; a third active layer provided between the second active layer and the light receiving layer, the third active layer including a third active portion of a second driving transistor, the third active portion including a metal oxide semiconductor; a conductive layer provided between the second active layer and the third active layer, the conductive layer including a second gate of the first driving transistor, the second gate being provided to at least partially overlap the second active portion; The second conductive layer further includes a third gate of the second driving transistor, the third gate being disposed to at least partially overlap the third active portion.
[0022] Preferably, in some embodiments of the present application, the first active portion includes a polysilicon semiconductor, The second active layer further includes the first active portion, and the conductive layer further includes a first gate of the switching element, the first gate being provided to at least partially overlap the first active portion.
[0023] Preferably, in some embodiments of the present application, the first active portion includes a metal oxide semiconductor, The third active layer further includes the first active portion, the conductive layer further includes a fourth gate of the switching element, and the second conductive layer further includes a first gate of the switching element, the fourth gate being arranged to at least partially overlap the first active portion, and the first gate being arranged to at least partially overlap the first active portion.
[0024] Preferably, in some embodiments of the present application, the first light receiving element and the second light receiving element are respectively located within two adjacent intersection areas, and the two adjacent intersection areas are located on the same side of the same light emitting unit. Effect of the Invention
[0025] The present application provides a display panel. The display panel includes at least one light receiving device including a switching element, a first light receiving element, and a second light receiving element. Here, the first light receiving element includes a first electrode, a first light receiving portion, and a first protective electrode, and the second light receiving element includes a second electrode, a second light receiving portion, and a second protective electrode. The first electrode and the second electrode are connected, and the first light receiving portion and the second light receiving portion are both connected to the source or drain of the switching element, so that the first light receiving element and the second light receiving element are designed to be connected in parallel, thereby increasing the light receiving area of the light receiving device, thereby improving the amount of electrical signals and improving the detection sensitivity. Furthermore, since the first electrode and the second electrode are provided in the same layer, and the first light receiving portion and the second light receiving portion are provided in the same layer, the film layer structure of the light receiving device is simplified. In addition, since an insulating layer is provided between the first electrode and the first light receiving portion, the difference in the potential barrier between the first electrode and the first light receiving portion can be reduced, enabling electron tunneling to form a conductive path; and by the same principle, since an insulating layer is provided between the second electrode and the second light receiving portion, the difference in the potential barrier between the second electrode and the second light receiving portion can be reduced, enabling electron tunneling to form a conductive path, thereby improving the light receiving performance of the light receiving device. [Brief description of the drawings]
[0026] In the following, in order to more clearly explain the technical solutions in the embodiments of the present application, the drawings that need to be used in the description of the embodiments will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without any creative efforts. [Figure 1] FIG. 1 is a first schematic structural diagram of a display panel provided in the present application. [Diagram 2] FIG. 2 is a schematic circuit diagram of a light-receiving device provided herein. [Diagram 3] FIG. 2 is a second schematic structural diagram of a display panel provided in the present application. [Figure 4] FIG. 3 is a third schematic structural diagram of a display panel provided in the present application. [Diagram 5] FIG. 4 is a fourth schematic structural diagram of a display panel provided in the present application. [Figure 6] FIG. 5 is a schematic structural diagram of the display panel provided in the present application. [Figure 7] FIG. 6 is a schematic structural diagram of the display panel provided in the present application. [Figure 8] FIG. 7 is a schematic structural diagram of the display panel provided in the present application. [Figure 9] FIG. 8 is a schematic structural diagram of the display panel provided in the present application. [Figure 10] FIG. 9 is a schematic structural diagram of the display panel provided in the present application. [Figure 11] 1 is a first schematic top view of a display panel provided herein; FIG. [Figure 12] FIG. 2 is a second schematic top view of a display panel provided herein. [Figure 13] FIG. 13 is a third schematic top view of a display panel provided herein. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0027] Hereinafter, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is clear that the described embodiments are only some of the embodiments of the present application, not all of the embodiments. Based on the embodiments of the present application, all other embodiments that a person skilled in the art can obtain without any creative efforts fall within the scope of protection of the present application.
[0028] In the description of the present application, the terms "first" and "second" are used for explanatory purposes only and cannot be understood as expressing or implying relative importance or the number of technical features shown. Thus, features defined by "first", "second", etc., may expressly or implicitly include one or more of the features and therefore cannot be understood as limiting the present application. Furthermore, unless otherwise clearly defined or limited, the terms "connected to each other" and "connection" should be understood in a broad sense, for example, mechanical connection, electrical connection, direct connection, indirect connection through an intermediate medium, or internal communication between two elements. A person skilled in the art can understand the specific meaning of the above terms in the present invention according to the specific situation.
[0029] The present application provides a display panel, which will be described in detail below. Note that the order of description of the following embodiments does not limit the preferred order of the embodiments of the present application.
[0030] 1, which is a first schematic structural diagram of a display panel provided in the present application. In an embodiment of the present application, the display panel 100 includes at least one light-receiving device ST. The light-receiving device ST includes a switching element T, a first light-receiving element S1 and a second light-receiving element S2.
[0031] The display panel 100 further includes a substrate 10 , a first conductive layer 25 , an insulating layer 26 , a light receiving layer 27 , a second conductive layer 28 and a third conductive layer 30 .
[0032] Here, the first conductive layer 25 is provided on the substrate 10. The first conductive layer 25 includes a first electrode 251 and a second electrode 252 that are connected to each other.
[0033] The light receiving layer 27 is provided on the side of the first conductive layer 25 farther from the substrate 10. The light receiving layer 27 includes a first light receiving portion 271 provided in correspondence with the first electrode 251, and a second light receiving portion 272 provided in correspondence with the second electrode 252. The light receiving layer 27 includes a metal oxide semiconductor. The first light receiving portion 271 and the second light receiving portion 272 are provided at a distance from each other.
[0034] The insulating layer 26 is provided between the first conductive layer 25 and the light receiving layer 27. For example, the insulating layer 26 includes a first insulating portion 261 and a second insulating portion 262. The first insulating portion 261 is located at least between the first electrode 251 and the first light receiving portion 271. The second insulating portion 262 is located at least between the second electrode 252 and the second light receiving portion 272.
[0035] The second conductive layer 28 is provided on the side of the light receiving layer 27 farther from the substrate 10. The second conductive layer 28 includes a first protective electrode 281 and a second protective electrode 282. The first protective electrode 281 is electrically connected to the first light receiving portion 271. The second protective electrode 282 is electrically connected to the second light receiving portion 272.
[0036] The third conductive layer 30 is provided on the side of the second conductive layer 28 farther from the substrate 10. The third conductive layer 30 includes a source 301 and a drain 302 of the switching element T. The first protective electrode 281 and the second protective electrode 282 are both connected to the source 301 or the drain 302. For example, the first protective electrode 281 and the second protective electrode 282 are both connected to the source 301. Alternatively, for example, the first protective electrode 281 and the second protective electrode 282 are both connected to the drain 302.
[0037] Here, the first light receiving element S1 includes a first electrode 251, a first insulating portion 261, a first light receiving portion 271, and a first protecting electrode 281. The second light receiving element S2 includes a second electrode 252, a second insulating portion 262, a second light receiving portion 272, and a second protecting electrode 282.
[0038] Here, the first electrode 251 may be directly connected to the second electrode 252, that is, the first electrode 251 and the second electrode 252 are an integral structure. The first electrode 251 and the second electrode 252 may be connected via a bridge wiring and a via, and the present application is not limited thereto. In each of the following embodiments of the present application, the first electrode 251 and the second electrode 252 are directly connected to each other, but this cannot be understood as limiting the present application.
[0039] In the embodiment of the present application, the light receiving device ST includes at least two light receiving elements, which are the first light receiving element S1 and the second light receiving element S2. Since the first electrode 251 and the second electrode 252 are connected to each other, the first protective electrode 281 and the second protective electrode 282 are both connected to the source 301 or the drain 302, thereby realizing a parallel connection between the first light receiving element S1 and the second light receiving element S2, thereby increasing the light receiving area of the light receiving device ST, thereby improving the amount of electrical signals and the detection sensitivity. Furthermore, since the first electrode 251 and the second electrode 252 are provided in the same layer, the first light receiving portion 271 and the second light receiving portion 272 are provided in the same layer, and the first protective electrode 281 and the second protective electrode 282 are provided in the same layer, the film layer structure of the light receiving device ST is simplified. In addition, since the first insulating portion 261 is provided between the first electrode 251 and the first light receiving portion 271, the difference in the potential barrier between the first electrode 251 and the first light receiving portion 271 can be reduced, allowing electron tunneling to form a conductive path. By the same principle, since the second insulating portion 262 is provided between the second electrode 252 and the second light receiving portion 272, the difference in the potential barrier between the second electrode 252 and the second light receiving portion 272 can be reduced, allowing electron tunneling to form a conductive path. As a result, the present application makes it possible to form a light receiving device ST by using the first conductive layer 25 of a general material, compared to the case in which a high work function metal is required to form a metal-semiconductor junction in the related art, and improves the light receiving performance of the light receiving device ST.
[0040] It should be understood that when the wiring space in the display panel 100 is limited, the light receiving areas of the first light receiving element S1 and the second light receiving element S2 are both designed to be small, so that the optical signals absorbed by the first light receiving portion 271 and the second light receiving portion 272 are small, and the current signals generated are also small. In the embodiment of the present application, the light receiving device ST includes at least the first light receiving element S1 and the second light receiving element S2 designed to be connected in parallel, which increases the overall light receiving area of the light receiving device ST and improves the amount of electrical signals, thereby improving the detection sensitivity.
[0041] In addition, the embodiment of the present application will be described as an example in which one light receiving device ST includes two light receiving elements (first light receiving element S1 and second light receiving element S2) connected in parallel, but this should not be understood as limiting the present application. For example, one light receiving device ST may include three light receiving elements, five light receiving elements, or more light receiving elements connected in parallel.
[0042] In the embodiment of the present application, the switching element T further includes a first gate 253 and a first active portion 231. The first active portion 231 is provided corresponding to the first gate 253. The source 301 and the drain 302 are each connected to the first active portion 231. Here, the film layer structures of the first gate 253, the first active portion 231, the source 301, and the drain 302 will be described in the following embodiment, and detailed description thereof will be omitted here.
[0043] In the embodiment of the present application, the light receiving device ST further includes at least one storage capacitor C. A first capacitor plate of the storage capacitor C is electrically connected to both the first electrode 251 and the second electrode 252. A second capacitor plate of the storage capacitor C is connected to the source 301 or the drain 302.
[0044] For example, the light-receiving device ST includes only one storage capacitor C, and the first light-receiving element S1 and the second light-receiving element S2 share one storage element C, further simplifying the structure of the light-receiving device ST.
[0045] Specifically, referring to Figures 1 and 2, Figure 2 is a schematic circuit diagram of a light-receiving device provided in the present application. The light-receiving device ST includes a first light-receiving element S1, a second light-receiving element S2, a storage capacitor C and a switching element T.
[0046] Here, a bias voltage V bias are connected. When light enters the first light receiving element S1 and the second light receiving element S2 of the light receiving device ST, the first light receiving part 271 of the first light receiving element S1 and the second light receiving part 272 of the second light receiving element S2 absorb the optical signal and convert the received optical signal into an electrical signal. The electrical signal is stored in the storage capacitor C, and after the storage capacitor C is full, the switching element T is turned on and the storage capacitor C is discharged, and the signal generated by the first light receiving element S1 and the second light receiving element S2 is transmitted to a detection signal line (not shown), and can be transmitted to a corresponding circuit by the detection signal line for processing, thereby realizing the detection of the light intensity.
[0047] In the embodiment of the present application, the material of the first active portion 231 can be single crystal silicon, low temperature polysilicon or metal oxide semiconductor. The metal oxide semiconductor can be IGZO (indium gallium zinc oxide), IGZTO (indium gallium zinc tin oxide), IZO, IGO (gallium indium oxide), IGTO (indium gallium tin oxide), IZTO (indium zinc tin oxide), ITO, ATZO (zinc aluminum tin oxide), AIZO (zinc aluminum indium oxide), etc.
[0048] In some embodiments, the electron mobility of the metal oxide semiconductor of the light absorbing layer 27 is greater than 10 cm 2 / Vs or more. Specifically, the material of both the first light receiving section 271 and the second light receiving section 272 is IGZO. IGZO has high mobility. IGZO has good light sensing characteristics and low resistance in the visible light band, and therefore can improve the light receiving performance of the light receiving device ST.
[0049] In some embodiments, the materials of the first active section 231, the first light receiving section 271 and the second light receiving section 272 are all IGZO, so that the first light receiving section 271 and the second light receiving section 272 can share the IGZO substrate film layer.
[0050] In some embodiments, the materials of the first active section 231, the first light receiving section 271, and the second light receiving section 272 may be different. For example, the material of the first light receiving section 271 and the second light receiving section 272 may be indium gallium zinc oxide, and the material of the first active section 231 may be single crystal silicon, low temperature polysilicon, or other oxide semiconductor materials other than IGZO. In this way, the performance requirements of the switching element T and the first light receiving element S1 and the second light receiving element S2 can be met simultaneously.
[0051] In some embodiments, the orthogonal projection of the first protective electrode 281 onto the substrate 10 overlaps with the orthogonal projection of the first light receiving portion 271 onto the substrate 10, and the orthogonal projection of the second protective electrode 282 onto the substrate 10 overlaps with the orthogonal projection of the second light receiving portion 272 onto the substrate 10. This allows the light receiving layer 27 and the second conductive layer 28 to be formed by patterning using the same photomask, simplifying the fabrication process. Naturally, the present application is not limited to this.
[0052] In the embodiment of the present application, the second light receiving element S2 is located on the side farther from the drain 302 of the first light receiving element S1. The first conductive layer 25 further includes a first capacitor electrode of the storage capacitor C. The first capacitor electrode is electrically connected to both the first electrode 251 and the second electrode 252. The third conductive layer 30 further includes a second capacitor electrode of the storage capacitor C. The second capacitor electrode is electrically connected to both the first guard electrode 281 and the second guard electrode 282. The second capacitor electrode and the first capacitor electrode are arranged to at least partially overlap each other.
[0053] Specifically, the first capacitor electrode is a part of the drain 302, and the second capacitor electrode is a part of the first electrode 251. The orthogonal projection of the drain 302 onto the substrate 10 at least partially overlaps with the orthogonal projection of the first electrode 251 onto the substrate 10. That is, the drain 302 constitutes a storage capacitor C together with at least the first electrode 251. Since the first electrode 251 is connected to the second electrode 252, the first light receiving element S1 and the second light receiving element S2 share one storage capacitor C.
[0054] In the embodiment of the present application, the display panel 100 further includes a first active layer 23 and a gate insulating layer 24. The first active layer 23 is disposed on a side of the first conductive layer 25 closer to the substrate 10. The gate insulating layer 24 is disposed between the first active layer 23 and the first conductive layer 25. The first active layer 23 includes a first active portion 231. The first conductive layer 25 further includes a first gate 253. The first active portion 231 is disposed corresponding to the first gate 253.
[0055] In the embodiment of the present application, the first gate 253, the first electrode 251, and the second electrode 252 are provided in the same layer, which can eliminate the need for a photomask and simplify the processing process. In addition, the thickness of the display panel 100 can be reduced.
[0056] In the embodiment, the display panel 100 further includes an interlayer insulating layer 29. The interlayer insulating layer 29 is located between the first conductive layer 25 and the third conductive layer 30. The interlayer insulating layer 29 has a first via 29a, a second via 29b, and a third via 29c. The first via 29a penetrates the interlayer insulating layer 29 and extends to a side of the first active unit 231 far from the substrate 10. The source 301 is connected to the first active unit 231 through the first via 29a. The second via 29b penetrates the interlayer insulating layer 29 and extends to a side of the first active unit 231 far from the substrate 10. The drain 302 is connected to the first active unit 231 through the second via 29b. The third via 29c exposes a surface of the first protective electrode 281 far from the substrate 10. The drain 302 is connected to the first protective electrode 281 through the third via 29c.
[0057] Here, the first active unit 231 includes a source region, a drain region, and a channel region (not shown) located between the source region and the drain region. The source 301 is connected to the source region. The drain 302 is connected to the drain region. The source region and the drain region are made conductive by a method such as ion doping, so that the conductivity between the source 301 and the drain 302 and the first active unit 231 can be improved.
[0058] In the embodiments of the present application, the switching element T is a top-gate transistor, but this is not intended to limit the present application. In some embodiments of the present application, the switching element T may be a bottom-gate transistor or a double-gate transistor.
[0059] In the embodiment of the present application, the substrate 10 may include, but is not limited to, a base layer 11, a barrier layer 12, a first insulating layer 13, and a second insulating layer 14, which are stacked in this order from bottom to top. Here, the material of the base layer 11 may be glass or a flexible material. The materials of the barrier layer 12, the first insulating layer 13, and the second insulating layer 14 may be silicon oxide, silicon nitride, etc. The barrier layer 12, the first insulating layer 13, and the second insulating layer 14 can function to block water and oxygen.
[0060] In the embodiment of the present application, the first conductive layer 25 is made of a material having excellent electrical conductivity and excellent light-shielding properties. For example, the material of the first conductive layer 25 may be molybdenum, titanium, molybdenum / copper (laminated), molybdenum / titanium (laminated), titanium / aluminum (laminated), etc. In the embodiment of the present application, when the first electrode 251 and the second electrode 252 are manufactured from a conductive material having light-shielding properties, it is possible to prevent light from the substrate 10 side from being incident on the first light-receiving element S1 and the second light-receiving element S2, thereby improving the detection accuracy of the light-receiving device ST.
[0061] In the embodiment of the present application, the material of the insulating layer 26 may be silicon nitride, silicon oxide, etc. The thickness of the insulating layer 26 is very thin, typically about 10 nm, for example, 5 nm to 15 nm. When the first light receiving element S1 and the second light receiving element S2 are operated, electrons pass through the first light receiving element S1 and the second light receiving element S2.
[0062] In the embodiment of the present application, the material of the gate insulating layer 24 and the interlayer insulating layer 29 may be silicon oxide, silicon nitride, aluminum trioxide, and stacks thereof.
[0063] In the embodiment of the present application, the second conductive layer 28 is a transparent conductive material, which ensures that light can be incident on the first light receiving element S1 and the second light receiving element S2, and improves the sensing sensitivity of the light receiving device ST. For example, the material of the second conductive layer 28 may be ITO, IZO, etc.
[0064] In the embodiment of the present application, the display panel 100 further includes a fourth conductive layer 21 and a buffer layer 22. The fourth conductive layer 21 is provided on a side of the first active layer 23 closer to the substrate 10. The buffer layer 22 is provided between the first active layer 23 and the fourth conductive layer 21. The fourth conductive layer 21 includes a light-shielding portion 211. The light-shielding portion 211 is provided corresponding to the first active portion 231. For example, the orthogonal projection of the light-shielding portion 211 onto the substrate 10 covers at least the orthogonal projection of the channel portion of the first active portion 231 onto the substrate 10.
[0065] Here, the light shielding portion 211 can block light rays incident on the substrate 10 from a direction far from the light shielding portion 211, and can further reduce the interference of external light rays with the first active portion 231, thereby further improving the operating performance of the light receiving device ST.
[0066] In some embodiments, the light-shielding portion 211 can further be connected to the source 301 or the drain 302 to form an equipotential, so as to prevent the voltage change of the light-shielding portion 211 from affecting the electrical performance of the first active portion 231.
[0067] In the embodiment of the present application, the third conductive layer 30 may further include an input electrode 303. The input electrode 303 is connected to the first electrode 251 or the second electrode 252. The input electrode 303 is connected to a bias voltage V bias It is used to insert.
[0068] For example, the interlayer insulating layer 29 further includes a connection hole 29d. The connection hole 29d extends to the surface of the second electrode 252 that is farther from the substrate 10. The input electrode 303 is connected to the second electrode 252 via the connection hole 29d.
[0069] In the embodiment of the present application, the first conductive layer 25 further includes at least one scan line, and the scan line can be time-division multiplexed to the first electrode 251 and the second electrode 252. Time-division multiplexing means that the scan line can be used to transmit a scan signal and can be connected to the first electrode 251 and the second electrode 252 via a bias voltage V bias Specifically, the scan lines may be used as the first electrodes 251 and the second electrodes 252 for transmitting the bias voltage V bias When performing fingerprint authentication, the signal line is connected to a bias voltage V bias When the image is transmitted to the scanning lines for display, the gate driving circuit provides the scanning signals to the scanning lines.
[0070] This reduces the wiring in the display panel 100 and increases the size of the first light receiving element S1 and the second light receiving element S2, thereby increasing the light receiving area. When a plurality of light receiving devices ST are provided in the display panel 100, each scanning line is multiplexed to only the first electrode 251 and the second electrode 252 connected to each other in one light receiving device ST.
[0071] 3, which is a second schematic structural diagram of a display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that in the implementation of the present application, the display panel 100 includes a fourth conductive layer 21. The fourth conductive layer 21 includes a conductive portion 212. The orthogonal projection of the conductive portion 212 onto the substrate 10 at least partially overlaps with the orthogonal projection of the drain 302 onto the substrate 10. That is, the conductive portion 212 and the drain 302 form a storage capacitor C.
[0072] In the embodiment of the present application, the conductive portion 212 is used to configure the drain 302 and the storage capacitor C, and the length of the first electrode 251 can be shortened in the direction from the switching element T to the first light receiving element S1. When the cross-sectional area of the first electrode 251 is constant, shortening the length of the first electrode 251 reduces the resistance of the first electrode 251 and reduces the load of the first light receiving element S1 and the second light receiving element S2.
[0073] In addition, the fourth conductive layer 21 may further include a light-shielding portion 211. The conductive portion 212 and the light-shielding portion 211 are provided in the same layer, which can eliminate a photomask step and simplify the processing process. Of course, in some embodiments, the conductive portion 212 and the light-shielding portion 211 may be provided in different layers.
[0074] 4, which is a third schematic structural diagram of a display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that in the implementation of the present application, the fourth conductive layer 21 further includes a conductive portion 212. The orthogonal projection of the conductive portion 212 onto the substrate 10 at least partially overlaps with the orthogonal projection of the first electrode 251 and / or the second electrode 252 onto the substrate 10. That is, the conductive portion 212 forms a storage capacitor C together with the first electrode 251 and / or the second electrode 252.
[0075] It should be understood that in the embodiment of the present application, the conductive portion 212 constitutes a storage capacitor C together with the first electrode 251 and / or the second electrode 252, and the extension length of the drain 302 from the switching element T to the first light receiving element S1 can be shortened, thereby reducing the distance between the switching element T and the first light receiving element S1 and reducing the wiring of the display panel 100. And since the conductive portion 212 is located below the first electrode 251 and / or the second electrode 252, the capacitance value of the storage capacitor C can be adjusted by adjusting the area of the conductive portion 212 without occupying extra wiring space. This allows the wiring space of the first light receiving element S1 and the second light receiving element S2 to be increased, further improving the light receiving area of the light receiving device and improving the sensitivity.
[0076] 5, which is a fourth schematic structural diagram of a display panel provided in the present application. The difference from the display panel 100 shown in FIG. 1 is that in the implementation of the present application, the first active layer 23 includes a first active portion 231 and an electrode portion 232 made of a conductive material.
[0077] Here, the first active portion 231 is provided corresponding to the first gate 253. The source 301 and the drain 302 are each connected to the first active portion 231. The orthogonal projection of the electrode portion 232 onto the substrate 10 partially overlaps with the orthogonal projection of the first electrode 251 and / or the second electrode 252 onto the substrate 10.
[0078] Here, the conductive ability of the electrode section 232 can be improved by performing a process such as ion doping to make the electrode section 232 conductive.
[0079] In the embodiment of the present application, the storage capacitor C is configured with the first electrode 251 and / or the second electrode 252 via the conductive electrode portion 232. On the one hand, the distance between the switching element T and the first light receiving element S1 can be reduced, thereby reducing the wiring in the display panel 100, thereby increasing the wiring space of the first light receiving element S1 and the second light receiving element S2, further improving the light receiving area of the light receiving device, and improving the sensitivity. On the other hand, since only the buffer layer 22 is provided between the electrode portion 232 and the first electrode 251 (second electrode 252), the distance between the two plates of the storage capacitor C can be reduced, thereby improving the capacitance value of the storage capacitor C.
[0080] Referring to Fig. 6, Fig. 6 is a fifth schematic structural diagram of a display panel provided in the present application. The difference from the display panel 100 shown in Fig. 1 is that in the implementation of the present application, the insulating layer 26 further includes a third insulating part 263. The orthogonal projection of the first insulating part 261 and the second insulating part 262 onto the substrate 10 overlaps with the orthogonal projection of the first electrode 251 and the second electrode 252 onto the substrate 10. The orthogonal projection of the third insulating part 263 onto the substrate 10 overlaps with the orthogonal projection of the first gate 253 onto the substrate 10.
[0081] In the embodiment of the present application, the patterning process for the first conductive layer 25 and the insulating layer 26 can be realized using the same photomask, simplifying the processing process. Furthermore, since the first insulating part 261 covers the first electrode 251 and the second electrode 252, and the third insulating part 263 covers the first gate 253, when the light-receiving layer 27 is manufactured, the insulating layer 26 can play a role in protecting the first electrode 251, the second electrode 252, and the first gate 253, thereby improving the stability of the light-receiving device.
[0082] Referring to Fig. 7, Fig. 7 is a sixth schematic structural diagram of a display panel provided in the present application. The difference from the display panel 100 shown in Fig. 1 is at least that in the implementation of the present application, the display panel 100 further includes a pixel driving circuit. The pixel driving circuit includes a first driving transistor T1 and a second driving transistor T2.
[0083] The display panel 100 further includes a second active layer 32, a third active layer 33 and a conductive layer .
[0084] The second active layer 32 is provided between the substrate 10 and the light receiving layer 27. The second active layer 32 includes a second active section 321 of the first driving transistor T1. The second active section 321 includes a polysilicon semiconductor.
[0085] The third active layer 33 is provided between the second active layer 32 and the light receiving layer 27. The third active layer 33 includes a third active section 331 of the second driving transistor T2. The third active section 331 includes a metal oxide semiconductor.
[0086] The conductive layer 34 is provided between the second active layer 32 and the third active layer 33. The conductive layer 34 includes a second gate 341 of the first driving transistor T1. The second gate 341 and the second active portion 321 are provided to at least partially overlap each other.
[0087] The second conductive layer 28 further includes a third gate 283 of the second driving transistor T2. The third gate 283 and the third active portion 331 are provided to at least partially overlap each other.
[0088] 7, in some embodiments, the first active portion 231 includes a polysilicon semiconductor. The second active layer 32 further includes the first active portion 231. The conductive layer 34 further includes a first gate 253 of the switching element T. The first gate 253 and the first active portion 231 are arranged to at least partially overlap each other. That is, the first active layer 23 and the second active layer 32 are the same active layer.
[0089] Here, the first conductive layer 25 further includes a third electrode 255. The third electrode 255, the second gate 341, and the first insulating layer 13 located between the third electrode 255 and the second gate 341 form a capacitor. The conductive layer 34 further includes a fifth gate 343 of the second driving transistor T2, that is, the second driving transistor T2 has a double-gate structure.
[0090] Here, the third conductive layer 30 further includes a first source 304 and a first drain 305 of the first driving transistor T1, and a second source 306 and a second drain 307 of the second driving transistor T2. The first drain 305 and the second source 306 are connected through a via.
[0091] In some embodiments, referring to Fig. 8, Fig. 8 is a seventh schematic structural diagram of a display panel provided in the present application. The difference from the display panel 100 shown in Fig. 7 is that in this embodiment, the first active part 231 includes a metal oxide semiconductor. The third active layer 33 further includes the first active part 231.
[0092] Here, the conductive layer 34 further includes a fourth gate 342 of the switching element T. The second conductive layer 28 further includes a first gate 253 of the switching element T. The fourth gate 342 and the first active portion 231 are provided to at least partially overlap. The first gate 253 and the first active portion 231 are provided to at least partially overlap. That is, the switching element T has a double gate structure.
[0093] Referring to Fig. 9, Fig. 9 is an eighth schematic structural diagram of a display panel provided in the present application. At least the difference from the display panel 100 shown in Fig. 1 is that in the implementation of the present application, the light receiving layer 27 further includes a first active portion 231 of a switching element T. The gate insulating layer 24 has an opening 24a. The opening 24a exposes the surfaces of the first light receiving portion 271 and the second light receiving portion 272 on the side farther from the substrate 10. The first protective electrode 281 and the second protective electrode 282 are provided in the opening 24a.
[0094] In the embodiment of the present application, the first active section 231, the first light receiving section 271, and the second light receiving section 272 are provided in the same layer, which can simplify the processing process. In addition, by forming the gate insulating layer 24 first and then forming the first protective electrode 281 and the second protective electrode 282, it is possible to avoid damaging the first active section 231 when patterning the second conductive layer 28, thereby improving the stability of the switching element T.
[0095] Furthermore, in some embodiments, referring to Figure 9, the display panel 100 further includes a pixel circuit. The pixel circuit includes a first drive transistor T1 and a second drive transistor T2.
[0096] Here, the light receiving layer 27 further includes a first active unit 231 of the switching element T and a third active unit 331 of the second driving transistor T2. The first active unit 231 of the switching element T, the third active unit 331 of the second driving transistor T2, the first light receiving unit 271, and the second light receiving unit 272 are provided in the same layer.
[0097] Specifically, the display panel 100 further includes a second active layer 32, a conductive layer 34, and a fifth conductive layer 31. The second active layer 32 is provided between the substrate 10 and the light receiving layer 27. The conductive layer 34 is provided between the second active layer 32 and the light receiving layer 27. The fifth conductive layer 31 is provided on the side of the gate insulating layer 24 farther from the substrate 10. The second active layer 32 includes a second active section 321 of the first driving transistor T1. The second active section 321 includes a polysilicon semiconductor. The conductive layer 34 includes a second gate 341 and an electrode section 232 of the first driving transistor T1. The second gate 341 and the second active section 321 are provided to at least partially overlap each other. The fifth conductive layer 31 includes a first gate 253 of the switching element T and a third gate 283 of the second driving transistor T2.
[0098] The first conductive layer 25 further includes a fourth gate 342 of the switching element T, a fifth gate 343 of the second drive transistor T2, and a third electrode 255. The third conductive layer 30 further includes a first source 304 and a first drain 305 of the first drive transistor T1, and a second source 306 and a second drain 307 of the second drive transistor T2. The first drain 305 and the second source 306 are connected through a via.
[0099] Referring to Fig. 10, Fig. 10 is a ninth schematic structural diagram of a display panel provided in the present application. The difference from the display panel 100 shown in Fig. 9 is that in the implementation of the present application, the second active unit 321 of the first driving transistor T1 and the first active unit 231 of the switching element T are provided in the same layer. The third active unit 331 of the second driving transistor T2, the first light receiving unit 271, and the second light receiving unit 272 are provided in the same layer.
[0100] Specifically, the second active layer 32 includes a second active portion 321 of the first drive transistor T1 and a first active portion 231 of the switching element T. The conductive layer 34 includes a second gate 341 of the first drive transistor T1 and a first gate 253 of the switching element T.
[0101] In the embodiment of the present application, LTPO (Low Temperature Poly-Oxide) technology is used to reduce the power consumption of the display panel 100. In addition, the switching element T and the light receiving device ST are manufactured in the same layer and process as the in-plane LTPO structure, making it possible to reduce the thickness of the display panel 100 and simplify the processing process.
[0102] 11, which is a first schematic top view of a display panel provided in the present application. The display panel 100 further includes a plurality of light-emitting units 40. The light-emitting units 40 are arranged in a plurality of rows along a first direction Y and in a plurality of columns along a second direction X. The first direction Y intersects with the second direction X. For example, the first direction Y is perpendicular to the second direction X.
[0103] Here, a plurality of intersection regions 40a are formed between the multiple row light emitting units 40 and the multiple column light emitting units 40. Each intersection region 40a is provided with at most one first light receiving element S1 or one second light receiving element S2.
[0104] In the embodiment of the present application, the first light receiving element S1 and the second light receiving element S2 are provided in different intersection regions 40a, so that the first light receiving element S1 and the second light receiving element S2 are both offset from the light emitting unit 40, and thus the display effect of the display panel is not affected. Furthermore, the first light receiving element S1 and the second light receiving element S2 are provided in different intersection regions 40a, which can improve the wiring space of the first light receiving element S1 and the second light receiving element S2, and can further increase the light receiving area of the first light receiving element S1 and the second light receiving element S2, thereby further improving the amount of electrical signals.
[0105] In the embodiment of the present application, each intersection area 40a can be provided with either a first light receiving element S1 or a second light receiving element S2 in order to improve the test sensitivity. Of course, the distribution density of the first light receiving element S1 and the second light receiving element S2 can be set according to the requirements of the actual product.
[0106] 11, the first light receiving element S1 and the second light receiving element S2 are located in two adjacent intersection regions 40a. The two adjacent intersection regions 40a are located on the same side of the same light emitting unit 40.
[0107] This allows the distance between the first light receiving element S1 and the second light receiving element S2 in the same light receiving device ST to be reduced, making it easier to realize a parallel connection between the first light receiving element S1 and the second light receiving element S2 and shortening the wiring length.
[0108] In some embodiments of the present application, the display panel 100 includes a plurality of light receiving devices ST. A plurality of first light receiving elements S1 and a plurality of second light receiving elements S2 located in the same row are arranged alternately, and a plurality of first light receiving elements S1 and a plurality of second light receiving elements S2 located in the same column are arranged alternately. Each of the first light receiving elements S1 is connected in parallel to an adjacent second light receiving element S2 located in the same row and on the same side. Or, each of the first light receiving elements S1 is connected in parallel to an adjacent second light receiving element S2 located in the same column and on the same side.
[0109] 11, for example, each first light receiving element S1 is connected in parallel to the adjacent second light receiving element S2 located in the same row and to the right of the first light receiving element S1. Naturally, each first light receiving element S1 may be connected in parallel to the adjacent second light receiving element S2 located in the same row and to the left of the first light receiving element S1.
[0110] It should be understood that, according to the embodiment of the present application, multiple light receiving devices ST are arranged alternately within the display panel 100, so that the distribution of the multiple light receiving devices ST within the display panel 100 becomes more uniform, and the uniformity of the detection sensitivity of the display panel 100 can be improved.
[0111] In some embodiments of the present application, as shown in Fig. 12, a plurality of first light receiving elements S1 and a plurality of second light receiving elements S2 located in the same row are arranged alternately, and all of the first light receiving elements S1 or the second light receiving elements S2 located in the same column are the first light receiving elements S1 or the second light receiving elements S2. Each first light receiving element S1 is connected in parallel to the adjacent second light receiving element S2 located in the same row and on the same side.
[0112] It should be understood that the embodiment of the present application improves the structural regularity of the multiple light-receiving devices S and reduces the difficulty of manufacturing by making the positional relationship between the first light-receiving element S1 and the second light-receiving element S2 in each light-receiving device ST the same for all devices.
[0113] In some embodiments of the present application, as shown in FIG. 1 and FIG. 13, the light-receiving device ST further includes a third light-receiving element S3 (not shown in FIG. 1).
[0114] Here, the third light receiving element S3 includes a third electrode, a third protective electrode, and a third light receiving portion located between the third electrode and the third protective electrode. The third electrode, the first electrode 251, and the second electrode 252 are located in the same layer and are connected to each other. The third light receiving element, the first light receiving portion 271, and the second light receiving portion 272 are located in the same layer and are provided separately. The third protective electrode, the first protective electrode 281, and the second protective electrode 282 are located in the same layer. The third protective electrode is connected to the source 301 or the drain 302.
[0115] The first light receiving element S1, the second light receiving element S2, and the third light receiving element S3 are located within three intersection regions 40a at three vertices of the same light emitting unit 40, respectively.
[0116] Specifically, in the same-row light-emitting unit 40, for every two adjacent light-receiving devices ST, two first light-receiving elements S1 are arranged diagonally, two second light-receiving elements S2 are arranged diagonally, and two third light-receiving elements S3 are located in the same row, thereby improving the uniformity of the distribution of the multiple light-receiving devices ST.
[0117] In the embodiment of the present application, a light receiving device ST including a first light receiving element S1, a second light receiving element S2, and a third light receiving element S3 is provided, and the light receiving area of the light receiving device ST is further improved. The first light receiving element S1, the second light receiving element S2, and the third light receiving element S3 are provided in three intersection regions 40a at three vertices of the same light emitting unit 40, respectively, and the distance between the first light receiving element S1, the second light receiving element S2, and the third light receiving element S3 in the same light receiving device ST can be reduced, making it easier to realize a parallel connection between the first light receiving element S1, the second light receiving element S2, and the third light receiving element S3, and shortening the length of the wiring.
[0118] The above provides a detailed introduction of the display panel provided in the examples of the present application, and the present specification describes the principles and embodiments of the present application using specific examples. However, the description of the above examples is only intended to aid in the understanding of the method and core concepts of the present application, and a person skilled in the art may make changes to any of the specific embodiments and scope of application based on the concepts of the present application. In summary, the contents of this specification should not be construed as limiting the present application. [Explanation of symbols]
[0119] 10 Substrate 11 Base layer 12 Barrier layer 13 First insulating layer 14 Second insulating layer 21 Fourth conductive layer 22 Buffer layer 23 1st active layer 24 Gate insulating layer 24a aperture 25 First conductive layer 26 Insulating layer 27 Light-receiving layer 28 Second conductive layer 29 Interlayer insulation layer 29a 1st via 29b 2nd via 29c 3rd Via 29d Connection hole 30 Third conductive layer 31 5th conductive layer 32 2nd active layer 33 3rd active layer 34 Conductive layer 40 Light Emitting Unit 40a Intersection Area 100 Display Panel 211 Shading part 212 Conductive part 231 1st active part 232 Electrode section 251 1st electrode 252 2nd electrode 253 Gate 1 255 3rd electrode 261 First Insulation Section 262 Second Insulation Section 263 Third Insulation Section 271 1st light receiving section 272 2nd light receiving section 281 1st protection electrode 282 2nd protection electrode 283 3rd Gate 301 Source 302 Drain 303 Input Electrode 304 First Source 305 First Drain 306 Second Source 307 Second Drain 321 2nd active part 331 3rd active part 341 Gate 2 342 4th Gate 343 Gate 5 C storage capacitor C memory element S Light receiving device S1 First light receiving element S2 Second light receiving element S3 Third light receiving element ST Light receiving device T Switching element T1 First drive transistor T2 Second drive transistor
Claims
1. A display panel including at least one light receiving device including a switching element, a first light receiving element, and a second light receiving element, the display panel further comprising: A substrate; a first conductive layer provided on the substrate and including a first electrode and a second electrode connected to each other; a light receiving layer including a first light receiving portion provided in correspondence with the first electrode and a second light receiving portion provided in correspondence with the second electrode, the first light receiving portion being provided on a side of the first conductive layer farther from the substrate and spaced apart from the first electrode, the light receiving layer including a metal oxide semiconductor; an insulating layer provided between the first conductive layer and the light receiving layer; a second conductive layer provided on a side of the light receiving layer farther from the substrate, the second conductive layer including a first protective electrode electrically connected to the first light receiving portion and a second protective electrode electrically connected to the second light receiving portion; a third conductive layer provided on a side of the second conductive layer farther from the substrate, the third conductive layer including a source and a drain of the switching element, the first protective electrode and the second protective electrode both being electrically connected to the source or the drain of the switching element; Here, the first light receiving element includes the first electrode, the first light receiving portion, and the first protecting electrode, and the second light receiving element includes the second electrode, the second light receiving portion, and the second protecting electrode. Display panel.
2. a first active layer provided between the substrate and the first conductive layer, the first active layer including a first active portion of the switching element, the source and drain of the switching element being electrically connected to the first active portion, The display panel according to claim 1 .
3. The light receiving device further includes a storage capacitor including first and second capacitor electrodes disposed in at least partial overlapping relation; the first capacitor electrode is electrically connected to both the first electrode and the second electrode; the second capacitor electrode is electrically connected to both the first shielding electrode and the second shielding electrode, and the second capacitor electrode is provided to at least partially overlap the first capacitor electrode; The display panel according to claim 2 .
4. a fourth conductive layer including a conductive portion in which an orthogonal projection of the conductive portion onto the substrate partially overlaps with an orthogonal projection of the first electrode and / or the second electrode onto the substrate; The display panel according to claim 3 .
5. The electron mobility of the metal oxide semiconductor of the absorption layer is 10 cm 2 / Vs or more, and the thickness of the insulating layer is 5 nm to 15 nm. The display panel according to claim 3 .
6. further comprising a pixel driving circuit including a first driving transistor and a second driving transistor; The display panel further comprises: a second active layer provided between the substrate and the light receiving layer, the second active layer including a second active portion of the first driving transistor, the second active portion including a polysilicon semiconductor; a third active layer provided between the second active layer and the light receiving layer, the third active layer including a third active portion of a second driving transistor, the third active portion including a metal oxide semiconductor; a conductive layer provided between the second active layer and the third active layer, the conductive layer including a second gate of the first driving transistor, the second gate being provided so as to at least partially overlap the second active portion; the second conductive layer further includes a third gate of the second driving transistor, the third gate being provided to at least partially overlap the third active portion; The display panel according to claim 2 .
7. the first active portion includes a polysilicon semiconductor; the second active layer further includes the first active portion, and the conductive layer further includes a first gate of the switching element, the first gate being provided to at least partially overlap the first active portion; The display panel according to claim 6.
8. the first active portion includes a metal oxide semiconductor; the third active layer further includes the first active portion, the conductive layer further includes a fourth gate of the switching element, the second conductive layer further includes a first gate of the switching element, the fourth gate being provided to at least partially overlap the first active portion, and the first gate being provided to at least partially overlap the first active portion. The display panel according to claim 6.
9. The light emitting device further includes a plurality of light emitting units arranged in a plurality of rows along a first direction and arranged in a plurality of columns along a second direction, wherein a plurality of intersection regions are formed between the plurality of rows of the light-emitting units and the plurality of columns of the light-emitting units, and each of the intersection regions is provided with at most one of the first light-receiving element or one of the second light-receiving element; The display panel according to claim 1 .
10. The first light receiving element and the second light receiving element are respectively located in two adjacent intersection regions, and the two adjacent intersection regions are located on the same side of the same light emitting unit. The display panel according to claim 9.
11. a plurality of said light receiving devices; wherein the first light receiving elements and the second light receiving elements located in the same row are alternately arranged, the first light receiving elements and the second light receiving elements located in the same column are alternately arranged, and each of the first light receiving elements is connected in parallel to the adjacent second light receiving element located in the same row and on the same side, or each of the first light receiving elements is connected in parallel to the adjacent second light receiving element located in the same column and on the same side, Alternatively, the first light-receiving elements and the second light-receiving elements located in the same row are arranged alternately, and those located in the same column are all the first light-receiving elements or the second light-receiving elements, and each of the first light-receiving elements is connected in parallel to the adjacent second light-receiving elements located in the same row and on the same side. The display panel according to claim 10.
12. the light-receiving device further includes a third light-receiving element; Here, the third light receiving element includes a third electrode, a third protective electrode, and a third light receiving portion located between the third electrode and the third protective electrode, the third electrode and the first electrode are located in the same layer and are connected to each other, the third light receiving portion and the first light receiving portion are located in the same layer and are provided apart from each other, and the third protective electrode is connected to the source or the drain, The first light receiving element, the second light receiving element, and the third light receiving element are respectively located within the three intersection regions at the three vertices of the same light emitting unit, The display panel according to claim 9.
13. A display panel including at least one light receiving device including a switching element, a first light receiving element, and a second light receiving element, the display panel further comprising: A substrate; a first conductive layer provided on the substrate and including a first electrode and a second electrode connected to each other; a light receiving layer including a first light receiving portion provided in correspondence with the first electrode and a second light receiving portion provided in correspondence with the second electrode, the first light receiving portion being provided on a side of the first conductive layer farther from the substrate and spaced apart from the first electrode, the light receiving layer including a metal oxide semiconductor; an insulating layer provided between the first conductive layer and the light receiving layer; a second conductive layer provided on a side of the light receiving layer farther from the substrate, the second conductive layer including a first protective electrode electrically connected to the first light receiving portion and a second protective electrode electrically connected to the second light receiving portion; a third conductive layer provided on a side of the second conductive layer farther from the substrate, the third conductive layer including a source and a drain of the switching element, the first protective electrode and the second protective electrode both being electrically connected to the source or the drain of the switching element; the first light receiving element includes the first electrode, the first light receiving portion, and the first protecting electrode, and the second light receiving element includes the second electrode, the second light receiving portion, and the second protecting electrode, The display panel further comprises: a first active layer provided between the substrate and the first conductive layer, the first active layer including a first active portion of the switching element, the source and drain of the switching element each including a first active layer electrically connected to the first active portion; The display panel further includes a plurality of light emitting units arranged in a plurality of rows along a first direction and in a plurality of columns along a second direction; A plurality of intersection regions are formed between the plurality of rows of the light emitting units and the plurality of columns of the light emitting units, and each of the intersection regions is provided with at most one of the first light receiving element or one of the second light receiving element; Display panel.
14. The light receiving device further comprises: a storage capacitor including a first capacitor electrode and a second capacitor electrode disposed so as to at least partially overlap; the first capacitor electrode is electrically connected to both the first electrode and the second electrode; the second capacitor electrode is electrically connected to both the first shielding electrode and the second shielding electrode, and the second capacitor electrode is provided to at least partially overlap the first capacitor electrode; The display panel according to claim 13.
15. a fourth conductive layer including a conductive portion in which an orthogonal projection of the conductive portion onto the substrate partially overlaps with an orthogonal projection of the first electrode and / or the second electrode onto the substrate; The display panel according to claim 14.
16. The electron mobility of the metal oxide semiconductor of the absorption layer is 10 cm 2 / Vs or more, and the thickness of the insulating layer is 5 nm to 15 nm. The display panel according to claim 14.
17. further comprising a pixel driving circuit including a first driving transistor and a second driving transistor; The display panel further comprises: a second active layer provided between the substrate and the light receiving layer, the second active layer including a second active portion of the first driving transistor, the second active portion including a polysilicon semiconductor; a third active layer provided between the second active layer and the light receiving layer, the third active layer including a third active portion of a second driving transistor, the third active portion including a metal oxide semiconductor; a conductive layer provided between the second active layer and the third active layer, the conductive layer including a second gate of the first driving transistor, the second gate being provided so as to at least partially overlap the second active portion; the second conductive layer further includes a third gate of the second driving transistor, the third gate being provided to at least partially overlap the third active portion; The display panel according to claim 13.
18. the first active portion includes a polysilicon semiconductor; the second active layer further includes the first active portion, and the conductive layer further includes a first gate of the switching element, the first gate being provided to at least partially overlap the first active portion; 18. The display panel according to claim 17.
19. the first active portion includes a metal oxide semiconductor; the third active layer further includes the first active portion, the conductive layer further includes a fourth gate of the switching element, the second conductive layer further includes a first gate of the switching element, the fourth gate being provided to at least partially overlap the first active portion, and the first gate being provided to at least partially overlap the first active portion.
18. The display panel according to claim 17.
20. The first light receiving element and the second light receiving element are respectively located in two adjacent intersection regions, and the two adjacent intersection regions are located on the same side of the same light emitting unit. The display panel according to claim 13.
Citation Information
Patent Citations
Display panel, display device and detection method
CN110416277A
Display assembly, display device and fingerprint identification method
CN113471249A
Optoelectronic integrated substrate, manufacturing method thereof and optoelectronic integrated circuit
CN113764439A
Display panel and electronic device
CN113972253A
Image sensor, control method thereof and display panel
CN114500893A