Optoelectronic components and method for manufacturing the same

Abstract

The invention relates to an optoelectronic component comprising an optoelectronic semiconductor chip arranged on an upper surface thereof and comprising an exit surface configured to emit light into an exit space. The exit surface is bounded laterally by a cover having a first section and a second section that bound the exit surface in an annular manner. The cover is configured such that a large proportion of light incident on the second section of the cover from outside the optoelectronic component is reflected. A large proportion of light emitted by the exit surface towards the cover is deflected by the cover such that it is not specularly reflected into the exit space.

Description

[Technical field]

[0001] The present invention relates to optoelectronic components and methods for manufacturing optoelectronic components. [Background technology]

[0002] Optoelectronic components come in a variety of forms and designs. Some are known to have a reflective potting around the periphery of the output face. Others are known to have a projection optics unit. Summary of the Invention [Problem to be solved by the invention]

[0003] The object of the present invention is to provide an optoelectronic component. Furthermore, the object of the present invention is to provide a method for manufacturing an optoelectronic component. These objects are achieved by an optoelectronic component and by a method for manufacturing an optoelectronic component comprising the features of the independent claims. Various embodiments are set out in the dependent claims. [Means for solving the problem]

[0004] The optoelectronic component comprises an optoelectronic semiconductor chip arranged on the top surface and having an exit surface for emitting light into an exit space. The exit surface is laterally bounded by a cover. The cover comprises a first section bounded in a ring shape at the exit surface and a second section. The cover is configured such that a large portion of light incident on the second section of the cover from outside the optoelectronic component is reflected. A large portion of the light emitted by the exit surface in the direction of the cover is deflected by the cover such that it is not specularly reflected into the exit space.

[0005] In this optoelectronic component, most of the light incident on the second portion of the cover from outside the optoelectronic component is reflected, thereby reducing the risk of the light incident from the outside causing material degradation due to, for example, heat. In this case, sunlight is an example of light incident from the outside. By configuring the cover to deflect most of the light emitted from the emission surface in the direction of the cover so as not to be regularly reflected into the emission space, the risk of unnecessary scattered light passing through the emission space is reduced. In this optoelectronic component, the above two functions of the cover are realized by the cover having two sections.

[0006] In an embodiment of the optoelectronic component, the optoelectronic component comprises a projection optical unit, which is arranged on the exit surface such that the light emitted into the exit space enters the projection optical unit. The projection optical unit may, for example, be arranged to project the light emitted from the exit surface into the target space. In this optoelectronic component, the effect is obtained that the light emitted from the exit surface in the direction of the cover is not projected, or is projected only to a small extent, into the projection optical unit, and is therefore not projected into the target space either.

[0007] In one embodiment of the optoelectronic component, the emission surface covers a portion of a top surface of the optoelectronic semiconductor chip, and the first section of the cover is arranged on the top surface of the optoelectronic semiconductor chip at least in cross section, which has the advantage that the cover can closely surround the emission surface of the optoelectronic semiconductor chip.

[0008] In one embodiment of the optoelectronic component, at least a part of the light emitted from the exit surface in the direction of the cover is guided through the optoelectronic semiconductor chip in the direction opposite the exit space, which is particularly effective in reducing the possibility of said light entering the exit space and thus into a projection optical unit arranged therein.

[0009] In one embodiment of the optoelectronic component, the second section is adjacent radially outward from the first section, with the effect that the part of the cover facing the exit surface is formed by the first section and the second section of the cover forms the part of the cover facing the exit space.

[0010] In one embodiment of the optoelectronic component, the second section comprises a contact area adjacent to the first section, where at least a portion of the light emitted by the exit surface towards the cover is reflected at the contact area, the effect of which is that the contact area is configured to be oriented such that a large portion of the light reflected at the contact area is not specularly reflected into the exit space.

[0011] In one embodiment of the optoelectronic component, the contact area has a concave shape. This is realized in a simple manner by the part of the first section facing the second section of the cover having a convex shape. The concave shape of the contact area has the effect of concentrating the light emitted from the exit surface towards the cover, thereby preventing specular reflection into the exit space.

[0012] In one embodiment of the optoelectronic component, the contact area is oriented towards the top surface of the optoelectronic semiconductor chip, which has the effect of preventing light emitted from the emission surface towards the cover and reflected at the contact area from being specularly reflected into the emission space.

[0013] In one embodiment of the optoelectronic component, the first and second sections have different optical properties, in particular different transparencies and / or different reflectivities, with the effect that the cover of the optoelectronic component allows for the realization of several different functions simultaneously.

[0014] In one embodiment of the optoelectronic component, the first section and the second section consist of different materials, with the result that it is particularly easily possible to configure the first section and the second section with different optical properties.

[0015] In one embodiment of the optoelectronic component, the second section has a higher content of light scattering particles than the first section, with the result that the second section has a higher reflectivity than the first section of the cover.

[0016] In one embodiment of the optoelectronic component, the first section is made of a material having a transmittance of at least 30% for a nominal thickness of 100 μm, with the effect that the first section may have sufficient transmittance to ensure that a large proportion of the light emitted from the exit surface in the direction of the cover is reflected by the first section of the cover.

[0017] In one embodiment of the optoelectronic component, the surface of the first section that is not covered by the second section is provided with a microstructure, such as a roughened surface, which has the effect that light emitted from the exit surface towards the cover is diffusely scattered on the microstructured surface.

[0018] In one embodiment of the optoelectronic component, the second section comprises a first partial region and a second partial region, which in turn have different optical properties, with the effect that the optical functionality of the cover can be further optimized for the desired application.

[0019] The first partial region is arranged between the first section and the second partial region, the first partial region then exhibiting a greater absorption power than the second partial region, with the effect that the first partial region of the second part of the cover acts as a light trap for light emitted from the exit surface in the direction of the cover.

[0020] In one embodiment of the optoelectronic component, the second partial region at least partially covers the first partial region, the second partial region then having a higher reflectivity than the first partial region, with the effect that the second partial region of the second section can particularly effectively reflect light entering the second section of the cover from outside the optoelectronic component.

[0021] In one embodiment of the optoelectronic component, the exit surface is configured as an LED matrix, with the advantage that the optoelectronic component can realize the function of an adaptive light source, e.g. adaptive headlights or adaptive lighting for sensor systems.

[0022] A method for manufacturing an optoelectronic component, comprising: arranging an optoelectronic semiconductor chip disposed on an upper surface, the chip having an exit surface for emitting light into an exit space; forming a first section of a cover, the first section being bounded in a ring shape at the exit surface; and forming a second section of the cover, the first section and the second section being formed in separate steps; the cover being configured such that a large portion of light incident on the second section of the cover from outside the optoelectronic component is reflected; and the cover deflects a large portion of the light emitted by the exit surface towards the cover such that it is not specularly reflected into the exit space.

[0023] As an effect of this, an optoelectronic component in which the cover has a dual function can be produced by the above-mentioned production method. A large part of the light, e.g. sunlight, entering the second section of the cover from the outside of the optoelectronic component is reflected, thereby reducing the risk of degrading the material of the optoelectronic component. A large part of the light emitted by the exit surface in the direction of the cover is deflected by the cover in such a way that it is not specularly reflected into the exit space. As a result, the effect is obtained that undesirable light reflection in the exit space is suppressed.

[0024] In one embodiment of the method, the first section is configured as a dam and the second section is configured as a potting extending to the dam, which has the advantage that the cover for the optoelectronic component can be manufactured in a cost-effective and easy manner.

[0025] In one embodiment of the method, the first section is constructed by dosing, which has the advantage that the first section of the cover can be manufactured in a cost-effective and simple manner.

[0026] The above-mentioned characteristics, features and advantages of the present invention, as well as the manner in which they are accomplished, will be more clearly and more clearly understood in connection with the following description of exemplary embodiments which are set forth in more detail in connection with the drawings, in which: [Brief description of the drawings]

[0027] [Figure 1] FIG. 1 is a cross-sectional side view of an optoelectronic component. [Diagram 2] FIG. 2 is a plan view of a portion of an optoelectronic component in an unfinished processing state. [Diagram 3] FIG. 3 is a plan view of a portion of an optoelectronic component in a subsequent processing state. [Figure 4] FIG. 4 is a cross-sectional side view of a first modified example of a cover for an optoelectronic component. [Diagram 5] FIG. 5 shows another modified example of the cover. [Figure 6] FIG. 6 shows another modified example of the cover. [Figure 7] FIG. 7 shows another modified example of the cover. [Figure 8] FIG. 8 shows another modified example of the cover. [Figure 9] FIG. 9 shows another modified example of the cover. [Figure 10] FIG. 10 shows another modified example of the cover. [Figure 11] FIG. 11 shows another modified example of the cover. [Figure 12] FIG. 12 shows another modified example of the cover. [Figure 13] FIG. 13 shows another modified example of the cover for the optoelectronic component. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] 1 is a schematic cross-sectional side view of a portion of an optoelectronic component 10. The optoelectronic component 10 is arranged to emit light into a target space. The optoelectronic component 10 may be, for example, part of an automobile headlight or may function as an illumination device for a sensor system.

[0029] The optoelectronic component 10 comprises a carrier 200 having a top surface 201. The carrier 200 may be configured, for example, as a printed circuit board having a metallization 210 disposed on the top surface 201.

[0030] The optoelectronic semiconductor chip 100 is disposed on a top surface 201 of the carrier 200. The optoelectronic semiconductor chip 100 comprises a top surface 101 and a bottom surface 102 opposite to the top surface 101. The bottom surface 102 faces the top surface 201 of the carrier 200.

[0031] The emission surface 110 is disposed on the top surface 101 of the optoelectronic semiconductor chip 100. The emission surface 110 is provided so as to emit light 103 into an emission space 300 above the top surface 101 of the emission surface 110.

[0032] The emission surface 110 may, for example, be configured on a light emitting semiconductor stack, for example an LED stack, which is arranged on the top surface 101 of the optoelectronic semiconductor chip 100. In this case, the emission surface 110 may, for example, be divided into individually controllable light emitting areas (pixels) arranged in a matrix. In this case, the optoelectronic semiconductor chip 100 is, for example, configured as a silicon chip and serves to control the light emitting stack.

[0033] Here, as an example, the optoelectronic semiconductor chip 100 itself may be configured as a light emitting semiconductor chip, for example an LED chip.

[0034] The exit surface 110 may be formed by a wavelength conversion layer. In this case, the wavelength conversion layer may be arranged on the light emitting semiconductor stack side and thus on the top surface 101 of the optoelectronic semiconductor chip 100. Alternatively, the wavelength conversion layer may be arranged on the optoelectronic semiconductor chip 100 itself configured as a light emitting semiconductor chip. The wavelength conversion layer may be provided to convert at least a part of the light generated by the light emitting semiconductor stack or the optoelectronic semiconductor chip into light of a different wavelength. As an example, the wavelength conversion layer may be provided to generate white mixed light.

[0035] In the example shown in Fig. 1, the optoelectronic component 10 further comprises a projection optical unit 350, which is arranged on the output surface 110 in the output space 300 such that the light 130 output from the output surface 110 into the output space 300 is transmitted into the projection optical unit 350. The projection optical unit 350 is arranged to project the light output from the output surface 110 into the output space 300 into a target space. If the optoelectronic component 10 is part of a headlight of a car, the projection optical unit 350 may for example serve to direct the light 130 output from the output surface 110 towards a road surface. In a simplified variant of the optoelectronic component 10, the projection optical unit 350 may be omitted.

[0036] Furthermore, the optoelectronic component 10 comprises a cover 400 laterally bounded at the exit face 110. The cover 400 comprises a first section 500 bounded in a ring shape at the exit face 110, and a second section 600. In the example shown in Fig. 1, the second section 600 is disposed adjacent to the radially outer side of the first section 500.

[0037] The cover 400 is arranged to reflect a large part of the light 140 incident on the second section 600 of the cover 400 from the outside of the optoelectronic component 10. The light 140 incident from the outside of the optoelectronic component 10 is, for example, sunlight passing through the projection optical unit 350 to an internal region of the optoelectronic component 10. In this case, under certain circumstances, the projection optical unit 350 may focus the light 140 incident from the outside onto a small area. It is necessary to reflect as much of said light 140 as possible from the second section 600 of the cover 400 in order to prevent excessive heating and thus possible damage or degradation of the components of the optoelectronic component 10. The light 140 reflected from the second section 600 of the cover 400 may then either exit the optoelectronic component 10 again or pass to a less sensitive region of the optoelectronic component 10.

[0038] The cover 400 further has the function of deflecting most of the light 120 emitted from the exit surface 110 in the direction of the cover 400 so as not to be specularly reflected into the exit space 300. Most of the light rays emitted from the exit surface 110 may be emitted within an angular range centered on a direction perpendicular to the exit surface 110 and pass directly into the projection optical unit 350 as light 130 emitted into the exit space 300. However, some of the light rays emitted from the exit surface 110 may be emitted laterally so as to enter the cover 400 that laterally defines the boundary of the exit surface 110. If this light 120 emitted in the direction of the cover 400 is reflected by the cover 400 and passes into the exit space 300 and the projection optical unit 350, this light will be projected by the projection optical unit 350 into the target space. Here, if the light 120 emitted in the direction of the cover 400 is specularly reflected by the cover 400, this causes a particular problem since it results in the reflection of high-intensity scattered light within the target space.

[0039] The cover 400 of the optoelectronic component 10 can be produced by a first section 500 and a second section 600 bounded in a ring shape at the output face 110, which are made successively in separate processes. FIG. 2 is a perspective plan view of a part of the optoelectronic component 10 in an unfinished processing state during the manufacture of the optoelectronic component 10. The projection optical unit 350 is not shown in FIG. 2. Instead, FIG. 2 also shows, in a schematic manner, a part of the housing 220 of the optoelectronic component 10, which is not shown in FIG. 1. The housing 220 accommodates the carrier 200 and also covers a part of the top face 201 of the carrier 200. The optoelectronic semiconductor chip 100 is exposed in a recess of the housing 220.

[0040] 2, a ring-shaped first section 500 of the cover 400 is created, the first section 500 being bounded at the exit surface 110. In this case, the first section 500 is located on the top surface 101 of the optoelectronic semiconductor chip 100. However, the first section 500 of the cover 400 may also be located partially or entirely adjacent to the optoelectronic semiconductor chip 100. The first section 500 may be formed, for example, by dosing or dispensing.

[0041] 3 is a schematic perspective plan view of a portion of the optoelectronic component 10 in a processed state following the state shown in FIG. 2. The second section 600 of the cover 400 is made adjacent to the first section 500 and located radially outward. In the example shown in FIG. 3, the second section 600 extends to the edge of the recess of the housing 220 and covers the entire top surface 201 of the carrier 200 that was previously exposed. The part of the top surface 101 of the optoelectronic semiconductor chip 100 radially outward of the first section 500 of the cover 400 is also covered by the second section 600 of the cover 400. The cover 400 surrounds the emission surface 110 of the optoelectronic semiconductor chip 100 that remains exposed in a ring shape.

[0042] The second section 600 of the cover 400 may be formed, for example, by potting (casting), in which case the prefabricated first section 500 of the cover 400 may act as a dam.

[0043] 4 is a schematic cross-sectional side view of a portion of an optoelectronic component 10. The view shows a portion of an optoelectronic semiconductor chip 100 with an output face 110 disposed on a top surface 101, and a portion of a cover 400 with a first section 500 and a second section 600.

[0044] A first section 500 of the cover 400 is generally disposed on the top surface 101 of the optoelectronic semiconductor chip 100 and defines the output surface 110. A second section 600 is disposed adjacent to and radially outward from the first section 500. The second section 600 is disposed on the top surface 101 of the optoelectronic semiconductor chip 100 in a cross-sectional view, but extends laterally beyond the optoelectronic semiconductor chip 100 and is disposed on the top surface 201 of the carrier 200, not shown in FIG.

[0045] 4, the first section 500 is configured with a cross section 53 that is approximately half of a disk. The surface of the first section 500 facing away from the top surface 101 of the optoelectronic semiconductor chip 100 is therefore curved approximately in a semicircular shape at the cross section 530. This surface is divided into a surface 510 that is not covered by the second section 600 and a surface 520 that is covered by the second section 600.

[0046] 4, the second section 600 of the cover 400 extends to the apex of the first section 500 in a direction perpendicular to the top surface 101 of the optoelectronic semiconductor chip 100. Thus, the first section 500 and the second section 600 of the cover 400 have approximately the same thickness in a direction perpendicular to the top surface 101 of the optoelectronic semiconductor chip 100. As a result, the uncovered surface 510 and the covered surface 520 of the first section 500 in the cross section 530 are approximately the same size. The uncovered surface 510 of the first section 500 faces the emission surface 110 of the optoelectronic semiconductor chip 100.

[0047] The second section 600 of the cover 400 comprises a contact area 630 adjacent to the covered surface 520 of the first section 500. Since the covered surface 520 of the first section 500 is convexly curved, the contact area 630 of the second section 600 has a concave shape. In this way, the contact area 630 forms a concave mirror. The contact area 630 faces towards the top surface 101 of the optoelectronic semiconductor chip 100. This means that the normal vector at all parts of the contact area 630 of the second section 600 faces towards or parallel to the top surface 101 of the optoelectronic semiconductor chip 100.

[0048] The first section 500 and the second section 600 of the cover 400 have different optical properties from one another, for example, because the first section 500 and the second section 600 are made from different materials. The first section 500 and the second section 600 may be made from the same matrix material with different percentages of filler.

[0049] As an example, the first section 500 has a higher transparency than the second section 600. The second section 600 has a higher reflectivity than the first section 500. To achieve this, the second section 600 may, for example, contain a higher proportion of light scattering particles than the first section 500. If highly reflective white filler particles are used, the first section 500 may, for example, have a concentration of said filler particles of 0 to 10 weight percent. If less reflective filler particles are used, the first section 500 may have a concentration of said filler particles of 0 to 30 weight percent. And the second section 600 of the cover 400 may contain a higher concentration of filler particles in each case. It is preferred that the first section 500 of the cover 400 is made of a material having a transmittance of at least 30% for a reference thickness of 100 μm.

[0050] At least a portion of the light 120 emitted from the exit surface 110 of the optoelectronic semiconductor chip 100 in the direction of the cover 400 enters the first section 500 of the cover 400 and is at least partially reflected by the contact area 630 of the second section 600 of the cover 400. Due to the concave shape of the contact area 630 facing the top surface 101 of the optoelectronic semiconductor chip 100, like a concave mirror, the light reflected by the contact area 630 enters the exit surface 110 again or passes over the exit surface 110 at a small angle. This prevents the light 120 emitted from the exit surface 110 in the direction of the cover 400 from being specularly reflected into the exit space 300.

[0051] Most of the light 140 entering the second section 600 of the cover 400 from outside the optoelectronic component 10 is reflected off the highly reflective outer surface 640 of the second section 600. Because the outer surface 640 is oriented substantially parallel to the top surface 101 of the optoelectronic semiconductor chip 100, the light reflected off the outer surface 640 again travels away from the optoelectronic component 10 or passes through a blind area of ​​the optoelectronic component 10.

[0052] As another example, the first section 500 of the cover 400 is configured to be mainly absorbent. In this example, the second section 600 also has a high reflectivity, particularly a higher reflectivity than the first section 500. In this configuration example, at least a portion of the light 120 emitted from the emission surface 110 of the optoelectronic semiconductor chip 100 in the direction of the cover 400 is absorbed in the first section 500 of the cover 400. At least a portion of the remaining portion of this light enters the first section 500 of the cover 400, and at least a portion of it is reflected by the contact area 630 of the second section 600 of the cover 400 as described above. This also prevents the light 120 emitted from the emission surface 110 in the direction of the cover 400 from being specularly reflected into the emission space 300.

[0053] 5 is a schematic cross-sectional side view of a portion of an alternative variant of the optoelectronic component 10. In the variant shown in FIG. 5, the first section 500 of the cover 400 is radially enlarged compared to the variant shown in FIG. 4, such that the first section 500 projects laterally beyond the top surface 101 of the optoelectronic semiconductor chip 100. Thus, the first section 500 of the cover 400 is provided in cross-section on the top surface 101 of the optoelectronic semiconductor chip 100 and on the top surface 201 of the carrier 200, which is not shown in FIG. 5, in cross-section. The first section 500 may also be provided on the top surface 201 of the carrier 200, so as to be located completely outside the optoelectronic semiconductor chip 100. 5, at least a portion of the light 120 emitted from the exit surface 110 in the direction of the cover 400 and reflected at the contact area 630 of the second section 600 of the cover 400 may be guided to exit from the first section 500 of the cover 400 in the opposite direction to the exit space 300, so that at least a portion of the light passes through the optoelectronic semiconductor chip 100. The light guided through the optoelectronic semiconductor chip 100 in the opposite direction to the exit space 300 may, for example, reach a light trap or be reflected or absorbed at the top surface 201 of the carrier 200. This prevents the light 120 emitted from the exit surface 110 in the direction of the cover 400 from being specularly reflected into the exit space 300 in either case.

[0054] 6 is a schematic cross-sectional side view of a portion of an alternative variation of the optoelectronic component 10. In the variation shown in FIG. 6, the second section 600 extends over a larger area on the surface of the first section 500 than in the variation shown in FIG. 5. This results in the second section 600 having a somewhat larger thickness than the first section 500 in a direction measured perpendicular to the top surface 101 of the optoelectronic semiconductor chip 100. In the variation shown in FIG. 6, the uncovered surface 510 of the first section 500 is smaller than the covered surface 520, which is smaller than in the variation shown in FIG. 5. As a result, a large portion of the light 140 incident from outside the optoelectronic component 10 is reflected onto the portion of the second section 600 of the cover 400 that is disposed on the surface of the first section 500.

[0055] The second section 600 of the cover 400 of the variant of the optoelectronic component 10 shown in FIG. 6 may also be made up of two parts, as will be explained below with reference to FIG.

[0056] FIG. 7 is a schematic cross-sectional side view of a portion of another variation of the optoelectronic component 10. The variation shown in FIG. 7 differs from the variation shown in FIG. 4 in that the cross section 530 of the first section 500 of the cover 400 does not have the semicircular shape of a disk. Instead, in the variation shown in FIG. 7, the cross section 530 has the shape of approximately a quarter of a disk. Thus, the surface 510 facing the emission face 110 of the optoelectronic semiconductor chip 100 and not covered by the second section 600 is a plane oriented approximately perpendicular to the top surface 101 of the optoelectronic semiconductor chip 100. In the variation shown in FIG. 7, the shape of the surface 520 of the first section 500 covered by the second section 600 and the shape of the contact area 630 of the second section 600 correspond to the variation of FIG. 4.

[0057] FIG. 8 is a schematic cross-sectional side view of a part of another modified example of the optoelectronic component 10. The modified example shown in FIG. 8 differs from the modified example shown in FIG. 4 in that the cross section 530 of the first section 500 of the cover 400 has a substantially triangular shape. Thus, in relation to the first section 500, the surface 510 not covered by the second section 600 and the surface 520 covered by the second section 600 are both configured in a planar shape and are inclined with respect to a direction perpendicular to the top surface 101 of the optoelectronic semiconductor chip 100. Thus, the contact area 630 of the second section 600 of the cover 400 is also configured in a planar shape. Meanwhile, the contact area 630 of the second section 600 is also directed toward the top surface 101 of the optoelectronic semiconductor chip 100 in the modified example shown in FIG. 8.

[0058] 9 is a schematic cross-sectional side view showing a portion of yet another modified example of the optoelectronic component 10. In the modified example shown in FIG. 9, the cross section 530 of the first section 500 of the cover 400 has a generally rectangular shape. Furthermore, in this modified example, similar to the modified example of FIG. 6, the second section 600 of the cover 400 extends partially over the first section 500, so that the second section 600 has a thickness greater than the first section 500 in a direction perpendicular to the top surface 101 of the optoelectronic semiconductor chip 100.

[0059] FIG. 10 is a schematic cross-sectional side view of a portion of another modified example of the optoelectronic component 10. In the modified example shown in FIG. 10, the cover 400 has a shape similar to that of the modified example shown in FIG. 6. Meanwhile, the second section 600 of the cover 400 is divided into a first partial region 610 and a second partial region 620. The first partial region 610 is disposed between the first section 500 and the second partial region 620 of the cover 400. Thereby, the first partial region 610 of the second section 600 forms a contact region 630 in contact with the first section 500. The second partial region 620 of the second section 600 forms an outer surface 640 of the second section 600 of the cover 400.

[0060] The first and second partial regions 610, 620 of the second section 600 have different optical properties. The first partial region 610 exhibits a greater absorption capacity than the second partial region 620. The optical properties of the second partial region 620 of the second section 600 may correspond to the optical properties of the second section 600 of the cover 400 described with reference to FIG.

[0061] In the variant of the optoelectronic component 10 shown in Fig. 10, at least a part of the light 120 emitted from the exit face 110 in the direction of the cover 400 is reflected at the contact area 630. On the other hand, a part of the light 120 emitted from the exit face 110 in the direction of the cover 400 may also impinge on the first partial area 610 of the second section 600 and be absorbed therein. In this way, the first partial area 610 of the second section 600 of the cover 400 thus forms a light trap.

[0062] In contrast, even in the variant shown in FIG. 10 , most of the light 140 entering the second section 600 of the cover 400 from outside the optoelectronic component 10 is reflected at the outer surface 640 of the second section 600 formed by the second partial region 620 of the second section 600 and does not pass through to the first partial region 610 of the second section 600.

[0063] The first partial region 610 and the second partial region 620 of the second section 600 of the cover 400 of the variant of the optoelectronic component 10 shown in Fig. 10 can be produced sequentially in two separate process steps, respectively. In this case, the first partial region 610 is produced first. Afterwards, the second partial region 620 is produced.

[0064] FIG. 11 is a schematic cross-sectional side view of a part of another modified example of the optoelectronic component 10. The modified example shown in FIG. 11 differs from the modified example of the optoelectronic component 10 described with reference to FIG. 4 in that the second section 600 of the cover 400 is divided into a first partial region 610 and a second partial region 620. The second partial region 620 at least partially covers the first partial region 610. In the example shown in FIG. 11, the second partial region 620 completely covers the first partial region 610, and the outer surface 640 of the second section 600 is formed by the second partial region 620. The first partial region 610 of the second section 600 is in contact with the covering surface 520 of the first section 500. Thereby, the contact region 630 of the second section 600 is formed by the first partial region 610 of the second section 600.

[0065] The first partial region 610 and the second partial region 620 of the second section 600 have different optical properties. The second partial region 620 has a higher reflectance than the first partial region 610. The second partial region 620 of the second section 600 of the cover 400 of the modified optoelectronic component 10 shown in FIG. 11 may have the same material and the same optical properties as the second section 600 of the modified optoelectronic component 10 described with reference to FIG. 4, for example. The first partial region 610 of the second section 600 of the cover 400 of the modified example shown in FIG. 11 may have a lower reflectance.

[0066] The first partial region 610 and the second partial region 620 of the second section 600 of the cover 400 of the variant of the optoelectronic component 10 shown in Fig. 11 can be produced sequentially in two separate process steps, where the first partial region 610 is produced first, followed by the second partial region 620.

[0067] Figure 12 is a schematic cross-sectional side view of a portion of another variant of the optoelectronic component 10. The variant of the optoelectronic component 10 shown in Figure 12 differs from the variant shown in Figure 4 in that the first section 500 of the cover 400 includes a substantially triangular cross section 530. The contact area 630 of the second section 600 is configured substantially planar and is oriented towards the emission space 300 rather than towards the top surface 101 of the optoelectronic semiconductor chip 100.

[0068] 12, light 120 emitted from the exit surface 110 in the direction of the cover 400 enters the first section 500 of the cover 400 and is at least partially reflected at a contact area 630 of the second section 600. In this case, the contact area 630 is oriented such that the light reflected at the contact area 630 does not pass into the exit space 300 and, as a result, does not pass into the projection optical unit 350.

[0069] FIG. 13 is a schematic cross-sectional side view of a part of another modified example of the optoelectronic component 10. The modified example shown in FIG. 13 corresponds to the modified example described with reference to FIG. 8. In the modified example of FIG. 13, a microstructure 540 is additionally provided on the surface 510 of the first section 500 that is not covered by the second section 600. The microstructure 540 may be, for example, a rough surface, in particular a statistically rough surface. The microstructure 540 may have the effect that at least a part of the light 120 emitted from the emission surface 110 in the direction of the cover 400 is diffusely scattered by the microstructure 540. As a result, the microstructure 540 prevents the light 120 emitted from the emission surface 110 in the direction of the cover 400 from being regularly reflected to the emission space 300. Also, in the other modified forms of the optoelectronic component 10 described with reference to FIGS. 4 to 12, the corresponding microstructure 540 may be provided on the surface 510 of the first section 500 of the cover 400 that is not covered by the second section 600. [Explanation of symbols]

[0070] 10 Optoelectronic Components 100 Optoelectronic Semiconductor Chips 101 Top surface 102 Bottom surface 110 Exit surface 120 Light emitted in the direction of the cover 130 Light emitted into the exit space 140 Incidence of light from outside 200 Careers 201 Top surface 210 Metallization 220 Housing 300 Output space 350 Projection Optical Unit 400 Cover 500 1st Section 510 Uncoated surface 520 Covered surface 530 Cross Section 540 Microstructure 600 2nd Section 610 1st partial area 620 Second partial area 630 Contact Area 640 Outside

Claims

1. An optoelectronic component (10), comprising: An optoelectronic semiconductor chip (100) is disposed on the upper surface (101) and has an exit surface (110) for emitting light (130) into an exit space (300); said exit face (110) being laterally bounded by a cover (400); The cover (400) comprises a first section (500) and a second section (600) bounded in a ring shape at the exit surface (110), the cover (400) is configured such that a majority of light (140) incident on the second section (600) of the cover (400) from outside the optoelectronic component (10) is reflected; A large portion of the light (120) emitted by the exit surface (110) in the direction of the cover (400) is deflected by the cover (400) so as not to be specularly reflected into the exit space (300). Optoelectronic component (10).

2. The optoelectronic component (10) includes a projection optical unit (350), the projection optical unit (350) being disposed above the exit surface (110) such that the light (130) emitted into the exit space (300) enters the projection optical unit (350). An optoelectronic component (10) according to claim 1.

3. The emission surface (110) covers a portion of the top surface (101) of the optoelectronic semiconductor chip (100); a first section (500) of the cover (400) disposed on a top surface (101) of the optoelectronic semiconductor chip (100) at least in cross section; An optoelectronic component (10) according to claim 1 or 2.

4. At least a portion of the light (120) emitted by the emission surface (110) in the direction of the cover (400) is guided through the optoelectronic semiconductor chip (100) in the opposite direction to the emission space (300). An optoelectronic component (10) according to any one of the preceding claims.

5. The second section (600) is adjacent to the radially outer side of the first section (500). An optoelectronic component (10) according to any one of the preceding claims.

6. said second section (600) comprising a contact area (630) adjacent said first section (500); At least a portion of the light (120) emitted by the exit surface (110) in the direction of the cover (400) is reflected at the contact area (630). An optoelectronic component (10) according to claim 5.

7. The contact area (630) has a concave shape. An optoelectronic component (10) according to claim 6.

8. the contact area (630) is oriented towards a top surface (101) of the optoelectronic semiconductor chip (100); An optoelectronic component (10) according to claim 6 or 7.

9. said first section (500) and said second section (600) have different optical properties, in particular different transparencies and / or different reflectivities; An optoelectronic component (10) according to any one of the preceding claims.

10. The first section (500) and the second section (600) are made of different materials. An optoelectronic component (10) according to claim 9.

11. The second section (600) has a higher content of light scattering particles than the first section (500). An optoelectronic component (10) according to claim 9 or 10.

12. The first section (500) is made of a material having a transmittance of at least 30% when taken at a nominal thickness of 100 μm. An optoelectronic component (10) according to any one of the preceding claims.

13. a surface (510) of said first section (500) not covered by said second section (600) comprising a microstructure (540); An optoelectronic component (10) according to any one of the preceding claims.

14. The second section (600) comprises a first sub-region (610) and a second sub-region (620); The first partial region (610) and the second partial region (620) have different optical properties. An optoelectronic component (10) according to any one of the preceding claims.

15. The first partial region (610) is disposed between the first section (500) and the second partial region (620); The first partial region (610) exhibits a greater absorbency than the second partial region (620). An optoelectronic component (10) according to claim 14.

16. The second partial region (620) at least partially covers the first partial region (610), The second region (620) has a higher reflectivity than the first region (610). An optoelectronic component (10) according to claim 14.

17. The exit surface (110) is configured as an LED matrix. An optoelectronic component (10) according to any one of the preceding claims.

18. A method for manufacturing an optoelectronic component (10), comprising the steps of: An optoelectronic semiconductor chip (100) is disposed on the upper surface (101) and has an emission surface (110) for emitting light (130) into an emission space (300); forming a first section (500) of the cover (400) at said exit face (110) and bounding said first section (500) in a ring shape; A method of forming a second section (600) of the cover (400), comprising the steps of: The first section (500) and the second section (600) are formed in separate steps, the cover (400) is configured such that a majority of light (140) incident on the second section (600) of the cover (400) from outside the optoelectronic component (10) is reflected; A large portion of the light (120) emitted by the exit surface (110) in the direction of the cover (400) is deflected by the cover (400) so as not to be specularly reflected into the exit space (300). method.

19. The first section (500) is configured as a dam; The second section (600) is configured as a potting extending to the dam.

20. The method of claim 18.

20. The first section (500) is configured by dosing.

20. The method of claim 18 or 19.

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