Die and Substrate Environmental Control Equipment for Hybrid Bonding

Abstract

An apparatus for extending queue time of a substrate for hybrid bonding by sustaining plasma activation. In some embodiments, the apparatus may include an environmentally controllable space with a support for holding a die or a substrate, a gas velocity accelerator for laterally recirculating one or more gases across the support, a filter, a humidifier device fluidly connected to the environmentally controllable space, the humidifier device enabling a humidity level in the environmentally controllable space to be controlled, a pressurizing device fluidly connected at an output side to the humidifier device and at an input side to at least one gas source, a relative humidity (RH) sensor disposed within the environmentally controllable space, and an environmental controller in communication with at least the humidifier device and the RH sensor, the environmental controller configured to maintain an RH level between about 80% and about 95%.

Description

[Technical field]

[0001]

[0001] Embodiments of the present principles relate generally to semiconductor processing of semiconductor substrates. [Background technology]

[0002]

[0002] Dies are attached to substrates using a bonding process. If the die has surface features that include a metallic material that connects with other metallic materials on the substrate, the process is known as hybrid bonding, since it bonds two or more materials. To enhance the bonding or attraction of the dielectric material between the die and the substrate, the die and substrate undergo a plasma activation process before the bonding process. First, the die is formed on a substrate, which is then divided or cut to form individual dies on a component wafer. The dies are removed from the component wafer and placed or bonded onto another substrate. Because a large number of dies are produced from one component wafer, it may take a long time before all the dies are bonded to another substrate. The longer the die and substrate are kept waiting ("queue time"), the less activated the surfaces of the die and substrate become. The less plasma activation occurs, the more voids or incomplete bonds between the die and substrate will occur during the bonding process, and the bonding yield will be significantly reduced.

[0003] Accordingly, the present inventors have provided an apparatus that extends the queue time after plasma activation to dramatically improve hybrid bonding yields. Summary of the Invention

[0004] SUMMARY OF THE DISCLOSURE An apparatus for extending hybrid bonding queue time after plasma activation is provided herein.

[0005]

[0005] In some embodiments, an apparatus for extending queue time of a die or substrate for hybrid bonding may include an environmentally controllable space having a support for holding at least one die or substrate, a gas velocity accelerator for recirculating one or more gases laterally across the support, a filter for blocking one or more gases before they flow laterally across the support, a humidifier device fluidly connected to the environmentally controllable space, the humidifier device enabling control of the humidity level within the environmentally controllable space, a pressurizing device fluidly connected to the humidifier device on an output side and fluidly connected to at least one gas source on an input side, a relative humidity (RH) sensor disposed within the environmentally controllable space, and an environmental controller in communication with at least the humidifier device and the RH sensor.

[0006]

[0006] In some embodiments, the apparatus includes a support configured to hold multiple vertical stacks of dies or substrates in one or more rows, a gas velocity accelerator configured to recirculate the one or more gases at a velocity of about 60 feet per minute to about 120 feet per minute, an environmental controller configured to maintain an RH level of about 80% to about 95%, and the filter is a high efficiency particulate air (HEPA) filter, and the apparatus further includes a temperature sensor disposed within the environmentally controllable space and in communication with the environmental controller, the environmental controller configured to maintain a temperature of the environmentally controllable space below about 100 degrees Celsius, and a pressure sensor disposed within the environmentally controllable space and in communication with the environmental controller, the environmental controller in communication with a pressurizing device and configured to maintain a pressure in the environmentally controllable space below about 60 PSI. The humidifier apparatus may include a gas bubbler having a cavity for a fluid through which a gas can be introduced such that the gas can be used as a carrier for the fluid into the environmentally controllable space, the fluid including deionized water, the deionized water being chemically dosed with a passivation agent or reducing agent, tetramethylammonium hydroxide (TMAH), or an acid, the humidifier apparatus being in communication with an environmental controller and being a heated evaporator controllable by the environmental controller to vary the humidity level within the environmentally controllable space, the apparatus being integrated into a cluster tool or located in a process chamber or bonder as a stand-alone tool, the apparatus being located in a non-processing area of ​​a cluster tool, the apparatus being integrated into a stand-alone storage station, the apparatus being integrated into a substrate carrier, and / or the apparatus being integrated into a factory interface (FI).

[0007]

[0007] In some embodiments, an apparatus for extending a work latency of a die or substrate for hybrid bonding includes an environmentally controllable space having a support for holding at least one substrate, the environmentally controllable space being part of a cluster tool or hybrid bonder chamber; an environmentally sealable port in the environmentally controllable space configured to receive at least one die or substrate from a plasma activated process chamber; and a gas velocity accelerator configured to laterally recirculate one or more gases across the support at a velocity of about 60 feet per minute to about 120 feet per minute. the support; a filter that blocks one or more gases before they flow laterally across the support; a humidifier device fluidly connected to the environmentally controllable space, the humidifier device enabling a humidity level within the environmentally controllable space to be controlled; a pressurizing device fluidly connected to the humidifier device on an output side and to at least one gas source on an input side; a relative humidity (RH) sensor disposed within the environmentally controllable space; and an environmental controller in communication with at least the humidifier device and the RH sensor, the environmental controller configured to maintain an RH level of about 80% to about 95%.

[0008]

[0008] In some embodiments, the apparatus may further include a temperature sensor disposed within the environmentally controllable space and in communication with an environmental controller, the environmental controller configured to maintain the temperature of the environmentally controllable space at less than about 100 degrees Celsius, or a pressure sensor disposed within the environmentally controllable space and in communication with an environmental controller, the environmental controller in communication with a pressurizing device and configured to maintain the pressure of the environmentally controllable space at less than about 60 PSI, and the humidifier device is a gas bubbler having a cavity for a fluid through which a gas can be introduced so that the gas can be used as a carrier for the fluid into the environmentally controllable space, and the fluid includes pure deionized water, or the fluid includes deionized water chemically dosed with a surface passivation treatment agent or reducing agent, tetramethylammonium hydroxide (TMAH), or an acid.

[0009] In some embodiments, an apparatus for extending queue time of a die or substrate for hybrid bonding includes an environmentally controllable space having a support for holding at least one die or substrate, the environmentally controllable space being a stand-alone storage space or a substrate carrier; an environmentally sealable port in the environmentally controllable space configured to receive at least one plasma activated die or substrate; a gas velocity accelerator configured to laterally recirculate one or more gases across the support at a velocity of about 60 feet per minute to about 120 feet per minute; and one or more the humidifier device fluidly connected to the environmentally controllable space, the humidifier device enabling a humidity level within the environmentally controllable space to be controlled; a pressurizing device fluidly connected to the humidifier device on an output side and to at least one gas source on an input side; a relative humidity (RH) sensor disposed within the environmentally controllable space; and an environmental controller in communication with at least the humidifier device and the RH sensor, the environmental controller configured to maintain an RH level of about 80% to about 95%.

[0010]

[0010] In some embodiments, the apparatus may further include a temperature sensor disposed within the environmentally controllable space and in communication with an environmental controller, the environmental controller configured to maintain a temperature of the environmentally controllable space below approximately 100 degrees Celsius, or a pressure sensor disposed within the environmentally controllable space and in communication with the environmental controller, the environmental controller in communication with a pressurizing device and configured to maintain a pressure in the environmentally controllable space below approximately 60 PSI.

[0011]

[0011] Other further embodiments are disclosed below.

[0012]

[0012] The embodiments of the present principles summarized above and described in more detail below can be understood by reference to the exemplary embodiments of the present principles shown in the attached drawings, which, however, merely illustrate exemplary embodiments of the present principles and should not be considered as limiting the scope thereof, as the present principles are tolerant of other equally effective embodiments. [Brief description of the drawings]

[0013] [Figure 1] 1 illustrates a process flow for hybrid bonding in accordance with some embodiments of the present principles. [Diagram 2] 1 is a cross-sectional view of an apparatus for controlling an environment to maintain an activated surface for hybrid bonding in accordance with some embodiments of the present principles; [Diagram 3] FIG. 1 illustrates a top view of an integrated tool with a controlled environment for holding an activated surface for hybrid bonding in accordance with some embodiments of the present principles. [Figure 4] FIG. 1 illustrates a top view of a stand-alone tool and controlled environment for holding an activated surface for hybrid bonding in accordance with some embodiments of the present principles. [Diagram 5] FIG. 1 illustrates a top view of a hybrid bonding station having a controlled environment for holding an activated surface in accordance with some embodiments of the present principles. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014]

[0018] To facilitate understanding, the same reference numbers have been used, wherever possible, to designate identical elements common to the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further detail.

[0015]

[0019] The present method and apparatus provide high quality hybrid bonding at high yields by extending the queue time (or "Q-time") after plasma activation of a substrate. Plasma activation is maintained by creating a controlled humid microenvironment around the activated surface, such as in an atmospheric mainframe (AMM), buffer chamber, or bonder, to hydrate the activated surface, maintain surface activation, and extend the Q-time. With proper maintenance of surface activation, the Q-time can be advantageously extended to at least two or three times the unmaintained activation Q-time.

[0016]

[0020] The activated surface needs to be bonded within a short Q time, after which activation is compromised and bond quality is significantly reduced. However, in chip-on-wafer (CoW) hybrid bonding, the total elapsed time from activation to bonding can be long due to waiting before bonding and bonder throughput. We have observed that surface hydration after plasma activation enhances surface interaction and contact during hybrid bonding, but surface hydration requires additional processes, increasing processing time and reducing bonding yield.

[0017]

[0021] The inventors have found that the Q-time or activation period can be significantly increased by using a humidity controlled environment (with or without chemical dosing) to hydrate and maintain the plasma activated surface. Relaxing the Q-time requirement reduces the number of reworks, saves tool time, and prevents surface topography changes of the copper bond pad and dielectric material due to rework. The inventors have found that in some embodiments, if the activated surface is kept in a humidity environment (e.g., relative humidity >40%, or specific humidity >7 g / kg at room temperature and 1 ATM) with or without purging with inert gas (e.g., argon, nitrogen gas, etc.), pressurization, or depressurization while waiting for bonding and / or during bonding. The same concept with water can also be applied to vapor concentrations of reducing / stabilizing treating agents diluted in deionized (DI) water (i.e., chemically dosed humidity environments), such as acetic acid, oxalic acid, tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), or acids.

[0018]

[0022] FIG. 1 illustrates a process flow for a hybrid bonding process. The process steps of the die are shown in FIG. 100A, and the process steps of the substrate to which the die is bonded are shown in FIG. 100B. In FIG. 100A, the substrate or component wafer with the die is prepared and sent for hybrid bonding. This preparation may include upstream processes such as patterning, chemical mechanical polishing (CMP), back grinding, dicing, etc. The die are separated (singulated) in a first die process 102 and held on the backside by a dicing tape to create a component wafer. The process flow in FIG. 100A is an example, and other flows with more or fewer steps can be used. The die are then wet cleaned in a second die process 104 and degassed in a third process 106 in preparation for activating the die surface for bonding. The die are then loaded into a process chamber and exposed to plasma to activate the die surface for bonding in a fourth die process 108. As soon as the die exits the plasma process chamber, die queue time 122 begins to run. During the die Q-time, the die is wet cleaned and hydrated in fifth die process 110, undergoes ultraviolet (UV) irradiation to release the die from the dicing tape in sixth die process 112, and undergoes die ejection and picking in seventh die process 114. The die Q-time 122 ends when the die is placed and bonded onto a substrate in hybrid bonding process 116.

[0019]

[0023] The substrate to which the die is bonded also undergoes a plasma activation process, as shown in FIG. 100B, which may or may not occur simultaneously with the process shown in FIG. 100A in some embodiments. In some embodiments, the substrate is prepared in a first substrate process 118, which may include multiple processes, and may be a silicon wafer with or without a silicon underlayer or a glass-supported silicon wafer depending on the process flow and use case. The substrate then undergoes activation with plasma in a second substrate process 120 in a process chamber. As soon as the substrate leaves the plasma process chamber, a substrate queue (Q) period 124 starts to run. The substrate Q time 124 ends when the die is placed on the substrate in the hybrid bonding process 116. In other words, the substrate Q time 124 and the die Q time 122 start immediately after the plasma activation and end the moment the die and substrate are bonded together by the bonding process.

[0020]

[0024] A substrate may have one to hundreds of dies bonded to its surface in one or more bonding sessions. A single die may have a single Q-time (time period from activation to bonding) and a substrate may have hundreds of Q-times (one Q-time for each die bonded on the substrate). In some cases, a substrate may stay in the hybrid bonder for tens of hours until all dies are bonded to the substrate. Thus, in a conventional process, the first activated die bonded to the activated substrate may be void-free with high bonding performance, but later bonded dies (e.g., more than 20 hours) may begin to exhibit voids and other bonding defects as the activation of both the substrate and the later placed dies begins to decrease substantially. Thus, the inventors have found that in order to obtain high bonding performance, it is important to extend the Q-time of the die and substrate even after they enter the hybrid bonder apparatus due to the long bonding process time.

[0021]

[0025] The industry standard acceptable Q-time for a die or substrate is typically 7 to 20 hours. If bonding is not performed by the acceptable time, the die and / or substrate must be reactivated before bonding can occur, lengthening processing time and reducing bonding yield. The inventors have discovered that to maintain activation of the die and substrate surfaces (extending Q-time), the surfaces should be kept in a high humidity environment. If the die and substrate are kept in a high relative humidity environment, the Q-time can be extended almost indefinitely. In some embodiments, die and substrates stored in a relative humidity environment of about 80% to about 95% or more maintained surface activation for over 125 hours. The 5 to 10 times longer Q-time compared to conventional processes eliminates Q-time as a critical period in the bonding process, shortening bonding process time (no need to reactivate surfaces) and improving bonding yield (surfaces that remain activated bond with higher performance).

[0022]

[0026] 2 is an apparatus 200 for extending the queue time of a die or substrate for hybrid bonding. The apparatus 200 includes an environmentally controllable space 202 having a support 210 for holding at least one die or substrate 204. The environmentally controllable space 202 is typically sealed with a sealable port 240 for loading and unloading the die and / or substrate from the support 210. The environmentally controllable space 202 may also have an optional environmental exhaust port 242 (described below). In some embodiments, the support 210 can hold multiple vertical stacks 206 of die or substrates. The vertical stacks 206 provide support while allowing laminar gas flow 212 across the die or substrate 204. The laminar gas flow 212 is provided by gas velocity accelerators 214 that laterally recirculate one or more gases across the die and substrate 204 within the support 210. To achieve a particle-free environment, gas velocity and pressure are used to sweep any particles away from the die and substrate 204. In some embodiments, the gas velocity accelerator 214 may be a recirculating fan or the like configured to accelerate the gas at about 60 feet per minute to about 120 feet per minute. The gas velocity accelerator 214 circulates the gas through the environmentally controllable volume 202 and over the die and substrate 204 in a direction indicated by arrow 216. As the gas exits the gas velocity accelerator 214, it passes through a filter 208 (e.g., laminar gas flow 212) before flowing across the die or substrate 204. In some embodiments, the filter 208 may be a high efficiency particulate air (HEPA) filter. The filter 208 allows the environmentally controllable volume 202 to meet ultra-clean ISO Class 1 or 2 requirements for cleanliness.

[0023]

[0027] The environmentally controllable space 202 is fluidly connected to a humidifier device 218. The humidifier device 218 is configured to allow the humidity level in the environmentally controllable space 202 to be controlled. In some embodiments, the humidifier device 218 may be a gas bubbler having a cavity for a fluid through which a gas can be introduced so that the gas can be used as a carrier of the fluid into the environmentally controllable space 202. In some embodiments, the fluid may be, but is not limited to, deionized water (DIW) or DIW chemically doped with a passivating agent or reducing agent such as tetramethylammonium hydroxide (TMAH) or an acid. In some embodiments, an optional pressurizing device 220 may be fluidly connected on the output side to the humidifier device 218, such as a gas bubbler, and on the input side to at least one gas source 222 of carrier gas to pressurize the gas through the fluid in the cavity of the gas bubbler. The carrier gas may be air, nitrogen, argon, and / or oxygen, or a mixture, etc. In some embodiments, the humidifier device 218 may be a heated evaporator.

[0024]

[0028] A relative humidity (RH) sensor 224 is disposed within the environmentally controllable space 202 to measure the level of relative humidity in the environmentally controllable space 202. In some embodiments, an optional temperature sensor 226 is disposed within the environmentally controllable space 202. The optional temperature sensor 226 is configured to facilitate maintaining a temperature of the environmentally controllable space 202 below approximately 100 degrees Celsius. In some embodiments, an optional pressure sensor 228 is disposed within the environmentally controllable space 202. The optional pressure sensor 228 is configured to facilitate maintaining a pressure of the environmentally controllable space 202 below approximately 60 PSI.

[0025]

[0029] In some embodiments, the relative humidity, pressure, gas recirculation rate, temperature, and / or deionized water dosing of the environmentally controllable space 202 may be controlled by an environmental controller 230. The environmental controller 230 may be a dedicated controller for only the environmentally controllable space 202 or may be part of a process controller / cluster tool controller, etc. In some embodiments, the environmental controller 230 may be in communication with at least the humidifier device 218 and the RH sensor 224 to maintain an RH level of about 80% to about 95%. In some embodiments, the environmental controller 230 may also be in communication with an optional temperature sensor 226 that facilitates controlling the temperature of the environmentally controllable space 202 to below 100° C. and / or an optional pressure sensor 228 that facilitates controlling the pressure of the environmentally controllable space 202 to below 60 PSI.

[0026]

[0030] The environmental controller 230 may also be in communication with the optional pressurizer 220 and gas source 222 to facilitate pressurization of the environmentally controllable space 202. The environmental controller 230 may also be in communication with the gas velocity accelerator 214 to adjust the gas velocity from about 60 feet per minute to about 120 feet per minute. In some embodiments, an optional environmental exhaust port 242 may be mechanically operated by a valve interface and / or electrically operated, for example, by the environmental controller 230, to exhaust a portion of the atmosphere from the environmentally controllable space 202 to another space (not shown, described below), such as, for example, but not limited to, a storage container or a factory interface (FI) or a wafer carrier. The storage container or wafer carrier may then be used to transport the die or substrate to another location without loss of activation (loss of Q time) of the die or substrate and without the need or expense of environmental support equipment (e.g., humidifiers, gases, pressure, temperature, etc.).

[0027]

[0031] The environmental controller 230 controls the operation of the environmentally controllable space 202 using direct control of associated devices or, alternatively, by controlling a computer (or controller) associated with the environmentally controllable space 202. During operation, the environmental controller 230 enables data collection and feedback from the respective devices and systems to optimize the performance of the environmentally controllable space 202. The environmental controller 230 generally includes a central processing unit (CPU) 232, a memory 234, and support circuits 236. The CPU 232 may be any form of general-purpose computer processor usable in an industrial environment. The support circuits 236 are conventionally coupled to the CPU 232 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines are stored in the memory 234 and, when executed by the CPU 232, transform the CPU 232 into a special purpose computer (environmental controller 230). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the environmentally controllable space 202.

[0028]

[0032] The memory 234 is a form of computer-readable storage medium that includes instructions that, when executed by the CPU 232, facilitate the operation of the environmentally controllable space 202 and associated devices. The instructions in the memory 234 are in the form of a program product, such as a program that implements the control method of the present principles. The program code may conform to any one of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program(s) of the program product define the functionality of the aspects (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to, non-writeable storage media in which information is permanently stored (e.g., a read-only memory device in a computer, such as a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), and writeable storage media in which changeable information is stored (e.g., a floppy disk in a diskette drive or hard disk drive, or any type of solid-state random access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functionality of the methods described herein, are aspects of the present principles.

[0029]

[0033] The apparatus 200 of FIG. 2 can be integrated into different systems, and can also be integrated into storage containers and substrate / wafer / die carriers, etc. Some example embodiments are depicted in FIG. 300A and FIG. 300B for an integrated tool or cluster tool used for hybrid bonding. The examples are not meant to be limiting on how the apparatus 200 can be integrated into different platforms and tools. In FIG. 300A, the integrated hybrid bonding platform includes a mainframe 302A in which the die 326 and / or substrate 328 can be moved between tools in a controlled environment (e.g., in air or under vacuum, etc.). The mainframe 302A includes a factory interface (FI) 304 that can accept the die 326 or substrate 328 that was previously built and is now transitioning to a hybrid bonding process. As shown by the dotted line 330A, the die 326 and / or substrate 328 can be moved from the FI 304 to a wet cleaning station 312, then to a degassing station 306, and then into a plasma chamber 308 for surface activation, as an example. The die 326 and / or substrate 328 are then moved to a storage chamber 320A attached to the main frame 302A for storage until the die 326 and / or substrate 328 are ready to proceed to the UV die demolding station 322 and then to the bonding station 310. The main frame 302A may also include other stations / apparatus 324 for annealing and / or baking, etc. The storage chamber 320A of the main frame 302A is configured similarly to the apparatus 200 of FIG. 2 to allow for a high RH environment in which to store the die 326 and / or substrate 328 while they are waiting to be bonded in order to maintain (extend) the surface activation of the die 326 and / or substrate 328.

[0030]

[0034] In FIG. 300B, the integrated hybrid bonding platform includes a mainframe 302B in which die 326 and / or substrate 328 can be moved between tools in a controlled environment (e.g., under vacuum, etc.). The mainframe 302B includes a factory interface (FI) 304 that can accept die 326 and / or substrate 328 that were previously built and are now being transitioned to a hybrid bonding process. As shown by dotted line 330B, the die 326 and / or substrate 328 move from the FI 304 to a wet cleaning station 312, then to a degassing station 306, and then into a plasma chamber 308 for surface activation. The die 326 and / or substrate 328 then move into a storage chamber 320B integrated into an interior area of ​​the mainframe 302B to be stored until the die 326 and / or substrate 328 are ready to proceed to a UV die release station 322 and then to a bonding station 310. The mainframe 302B may also include other stations / apparatus 324 for annealing and / or baking, etc. The storage chamber 320B of the mainframe 302B is configured similarly to the apparatus 200 of FIG. 2 to allow for a high RH environment in which to store the die 326 and / or substrate 328 while they are waiting to be bonded in order to maintain (extend) the surface activation of the die 326 and / or substrate 328.

[0031]

[0035] The apparatus 200 of FIG. 2 can also be used in combination with a stand-alone tool used for hybrid bonding processing as shown in diagram 400 of FIG. 4. This example is not intended to be limiting as to how the apparatus 200 can be integrated into various stand-alone tools. In diagram 400, a stand-alone wet cleaning station 412 receives a die 326 and / or a substrate 328 that was previously built and is now moving through a stand-alone hybrid bonding process station. As shown by dotted line 430, the die 326 and / or substrate 328 move from the stand-alone wet cleaning station 412 to the FI 404, then to the degassing station 406, and then to the plasma chamber 408 for surface activation. The die 326 and / or substrate 328 then move through a container 460 filled with high RH gas to a stand-alone storage chamber 420. In some embodiments, the FI 404 may include the apparatus 200 of FIG. 2 and may include an optional environmental exhaust port 242 that may be used to fill the container 460 with a high RH gas for transporting the die 326 and / or substrate 328 to the stand-alone storage chamber 420. The container 460 may include, for example, but is not limited to, a front opening unified pod (FOUP), a front opening shipping box (FOSB), an equipment front end module, or a substrate carrier. The stand-alone storage chamber 420 provides storage for the die 326 and / or substrate 328 until they are ready to proceed to the UV release station 422 and then to the bonding station 410. The stand-alone storage chamber 420 may include the apparatus 200 of FIG. 2 and may also include an optional environmental exhaust port 242 that may be used to fill the container 460 with a high RH gas for transporting the die 326 and / or substrate 328 to the UV release station 422 and then to the bonding station 410.

[0032]

[0036] The apparatus 200 of FIG. 2 can also be used in combination with a hybrid bonding station that may or may not be integrated into an integrated / cluster tool, as shown in FIG. 5, 500A, 500B, 500C, and 500D. In other words, the following examples can be used in a stand-alone hybrid bonding station, or a hybrid bonding station that is integrated into a cluster tool with a mainframe (see, for example, FIG. 3). In some embodiments, the bonding station 510 can have an FI 504A with the apparatus 200 of FIG. 2, including an optional environmental exhaust port 242, as shown in FIG. 5, 500A. A container 460 is used to transport the die and / or substrate to the bonding station 510 via the FI 504A, and is equipped to interface with the optional environmental exhaust port 242 of the FI 504A to fill / refill the container 460 with high RH gas. The die and / or substrate can then be stored in the FI 504A without loss of activation until the bonding process is available at the bonding station 510. In some embodiments, the bonding station 510 may have a storage buffer 520 with the apparatus 200 of FIG. 2 as shown in FIG. 5, diagram 500B. The bonding station 510 may also include the apparatus 200 of FIG. 2 and an FI 504B that may or may not include an optional environmental exhaust port 242. A container 460 is used to transport the die and / or substrate to the bonding station 510 via the FI 504B and is equipped to interface with the optional environmental exhaust port 242 of the FI 504B, if present, to fill / refill the container 460 with high RH gas. The die and / or substrate may then be stored in the storage buffer 520 without losing activation until they are available for the bonding process at the bonding station 510.

[0033]

[0037] In some embodiments, the bonding station 510C includes the apparatus 200 of FIG. 2, as shown in diagram 500C of FIG. 5. The bonding station 510C may also include the apparatus 200 of FIG. 2 and the FI 504B, which may or may not include the optional environmental exhaust port 242. The container 460 is used to transport the die and / or substrate to the bonding station 510 via the FI 504B, and is equipped to interface with the optional environmental exhaust port 242 of the FI 504B, if present, to fill / refill the container 460 with high RH gas. The die and / or substrate may then be stored in the FI 504B and / or the bonding station 510C without loss of activation until the bonding process is available or completed at the bonding station 510. A bonder incorporating the apparatus 200 may pick and place a large number of die onto a substrate without concern for degradation of bonding performance due to surface activation loss of conventional processes. In some embodiments, the bonding station 510C includes the apparatus 200 of FIG. 2 as shown in FIG. 5, and has a storage buffer 520 including the apparatus 200 of FIG. 2 as shown in FIG. 5, 500D. The bonding station 510C may also include the apparatus 200 of FIG. 2 and the FI 504B, which may or may not include the optional environmental exhaust port 242. The container 460 is used to transport the die and / or substrate to the bonding station 510 via the FI 504B, and is equipped to interface with the optional environmental exhaust port 242 of the FI 504B, if present, to fill / refill the container 460 with high RH gas. The die and / or substrate may then be stored in the bonding station 510C, the storage buffer 520, and / or the FI 504B without losing activation until the bonding process is available or completed at the bonding station 510.

[0034]

[0038] Embodiments of the present principles may be implemented in hardware, firmware, software, or any combination thereof. Also, embodiments may be implemented as instructions stored using one or more computer-readable media that can be read and executed by one or more processors. A computer-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing platform or a "virtual machine" running on one or more computing platforms). For example, a computer-readable medium may include any suitable form of volatile or non-volatile memory. In some embodiments, a computer-readable medium may include a non-transitory computer-readable medium.

[0035]

[0039] While the forgoing is directed to embodiments of the present principles, other and further embodiments of the present principles may be devised without departing from the basic scope thereof.

Claims

1. 1. An apparatus for extending queue time of a die or substrate for hybrid bonding, comprising: an environmentally controllable space having a support for holding at least one die or substrate; a gas velocity accelerator for laterally recirculating one or more gases across the support; a filter that blocks the one or more gases before they flow laterally across the support; a humidifier device fluidly connected to the environmentally controllable space, the humidifier device enabling a humidity level within the environmentally controllable space to be controlled; a pressurizing device fluidly connected at an output side to the humidifier device and at an input side to at least one gas source; a relative humidity (RH) sensor disposed within the environmentally controllable space; an environmental controller in communication with at least the humidifier device and the RH sensor; An apparatus comprising:

2. The apparatus of claim 1 , wherein the support holds multiple vertical stacks of dies or substrates in one or more rows.

3. 10. The apparatus of claim 1, wherein the gas velocity accelerator is configured to recirculate the one or more gases at a velocity of about 60 feet per minute to about 120 feet per minute.

4. The apparatus of claim 1 , wherein the environmental controller is configured to maintain an RH level between about 80% and about 95%.

5. a temperature sensor disposed within the environmentally controllable space and in communication with the environmental controller, the environmental controller configured to maintain a temperature of the environmentally controllable space below about 100 degrees Celsius; The apparatus of claim 1 further comprising:

6. a pressure sensor disposed within the environmentally controllable volume and in communication with the environmental controller, the environmental controller being in communication with the pressurizing device and configured to maintain a pressure in the environmentally controllable volume below about 60 PSI; The apparatus of claim 1 further comprising:

7. 10. The apparatus of claim 1, wherein the humidifier device is a gas bubbler having a cavity for a fluid into which a gas can be introduced such that the gas can be used as a carrier for the fluid into the environmentally controllable space.

8. The apparatus of claim 7 , wherein the fluid comprises deionized water.

9. 10. The apparatus of claim 8, wherein the deionized water is chemically doped with a passivation or reducing agent, tetramethylammonium hydroxide (TMAH), or an acid.

10. 10. The apparatus of claim 1, wherein the humidifier device is a heater evaporator in communication with and controllable by the environmental controller to vary the humidity level within the environmentally controllable space.

11. The apparatus of claim 1 , wherein the apparatus is integrated into a cluster tool or disposed in a process chamber or bonder as a stand-alone tool.

12. The apparatus of claim 1 , wherein the apparatus is disposed in a non-processing area of ​​a cluster tool.

13. 10. The apparatus of claim 1 , wherein the apparatus is integrated into a stand-alone storage station.

14. The apparatus of claim 1 , wherein the apparatus is integrated into a substrate carrier.

15. The device according to claim 1 , which is integrated into a factory interface (FI).

16. 1. An apparatus for extending queue time of a die or substrate for hybrid bonding, comprising: an environmentally controllable space having a support for holding at least one substrate, the environmentally controllable space being part of a cluster tool or a hybrid bonder chamber; an environmentally sealable port in the environmentally controllable volume configured to receive at least one die or substrate from a plasma activated process chamber; a gas velocity accelerator configured to laterally recirculate one or more gases across the support at a velocity of about 60 feet per minute to about 120 feet per minute; a filter that blocks the one or more gases before they flow laterally across the support; a humidifier device fluidly connected to the environmentally controllable space, the humidifier device enabling a humidity level within the environmentally controllable space to be controlled; a pressurizing device fluidly connected at an output side to the humidifier device and at an input side to at least one gas source; a relative humidity (RH) sensor disposed within the environmentally controllable space; an environmental controller in communication with at least the humidifier device and the RH sensor, the environmental controller configured to maintain an RH level between about 80% and about 95%; An apparatus comprising:

17. a temperature sensor disposed within the environmentally controllable space and in communication with the environmental controller, the environmental controller configured to maintain a temperature of the environmentally controllable space below about 100 degrees Celsius; or a pressure sensor disposed within the environmentally controllable volume and in communication with the environmental controller, the environmental controller being in communication with the pressurizing device and configured to maintain a pressure in the environmentally controllable volume below about 60 PSI; The apparatus of claim 16 further comprising:

18. 17. The apparatus of claim 16, wherein the humidifier device is a gas bubbler having a cavity for a fluid into which a gas can be introduced such that the gas can be used as a carrier for the fluid into the environmentally controllable space, the fluid comprising pure deionized water, or the fluid comprising deionized water chemically dosed with a passivation or reducing agent, tetramethylammonium hydroxide (TMAH), or an acid.

19. 1. An apparatus for extending queue time of a die or substrate for hybrid bonding, comprising: an environmentally controllable space with a support for holding at least one die or substrate, the environmentally controllable space being a stand-alone storage space or a substrate carrier; an environmentally sealable port in the environmentally controllable volume configured to receive at least one plasma activated die or substrate; a gas velocity accelerator configured to laterally recirculate one or more gases across the support at a velocity of about 60 feet per minute to about 120 feet per minute; a filter that blocks the one or more gases before they flow laterally across the support; a humidifier device fluidly connected to the environmentally controllable space, the humidifier device enabling a humidity level within the environmentally controllable space to be controlled; a pressurizing device fluidly connected at an output side to the humidifier device and at an input side to at least one gas source; a relative humidity (RH) sensor disposed within the environmentally controllable space; an environmental controller in communication with at least the humidifier device and the RH sensor, the environmental controller configured to maintain an RH level between about 80% and about 95%; An apparatus comprising:

20. a temperature sensor disposed within the environmentally controllable space and in communication with the environmental controller, the environmental controller configured to maintain a temperature of the environmentally controllable space below about 100 degrees Celsius; or a pressure sensor disposed within the environmentally controllable volume and in communication with the environmental controller, the environmental controller being in communication with the pressurizing device and configured to maintain a pressure in the environmentally controllable volume below about 60 PSI; 20. The apparatus of claim 19, further comprising:

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