Quantum dot diffuser plate and its manufacturing method and application
The quantum dot diffusion plate employs a three-layer coextrusion technology to protect quantum dots from environmental deactivation, addressing manufacturing complexity and efficiency issues, and achieving stable and efficient light emission with improved brightness retention.
Patent Information
- Application Number
- JP2024572511
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-02-28
- Filing Date
- 2022-12-02
- Publication Date
- 2025-03-21
AI Technical Summary
Existing quantum dot diffusion plates face challenges such as complex and costly manufacturing processes, sensitivity to heat, oxygen, and water, leading to inactivation of quantum dots and reduced luminous efficiency and stability.
A quantum dot diffusion plate with a three-layer coextrusion technology, comprising a diffusion layer, a quantum dot layer, and a transparent layer, where the quantum dot layer is protected by the diffusion and transparent layers, preventing deactivation due to external factors and ensuring consistent linear expansion coefficients to avoid image distortion.
The solution provides a quantum dot diffusion plate with high luminous efficiency, stable light emission, and a simple, low-cost manufacturing method, while maintaining brightness retention rates of 85% or more under high temperature and humidity conditions.
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Abstract
Description
[Technical field]
[0001] The present invention relates to the field of quantum dot diffusion plate technology, and more particularly to a quantum dot diffusion plate and its manufacturing method and application. [Background technology]
[0002] Quantum dots are nanometer-sized semiconductors that confine excitons in three spatial directions. By applying a certain electric field or light pressure to this nanometer semiconductor material, it emits light of a specific frequency, and the frequency of the emitted light changes with the change in the size of the semiconductor. Therefore, the color of the emitted light can be controlled by adjusting the size of the nanometer semiconductor. This nanometer semiconductor has the property of constraining electrons and electron holes, just like atoms and molecules in nature, so it is called a quantum dot. In addition to being able to control the emission spectrum by changing its size, quantum dots have the characteristics of good photostability, long life, wide excitation, narrow emission, and large Stokes shift. Therefore, the application of quantum dot technology in the display field has a wide color gamut and the color is close to the inherent color of the object. Quantum dots are also applied in the lighting industry, where the light is close to sunlight.
[0003] In the past, quantum dot technology was often combined with light diffusion plates to create quantum dot diffusion plates, which are mainly applied to the display industry. However, quantum dots are sensitive to heat, oxygen, and water, so the main methods are (1) to bond quantum dot film to ordinary diffusion plates, (2) to apply a lamination film when extruding the diffusion plate, and (3) to print quantum dots on the diffusion plate by printing method, thereby bonding quantum dots to light diffusion plates. Here, quantum dot waterproof oxygen barrier material film is currently mainly imported, which is expensive and has a complicated process. Large display devices also have the problem of display distortion due to the mismatch of the linear expansion coefficient of the quantum dot film and the diffusion plate. In addition, the printing method requires a complicated process and a series of post-processing processes such as packaging, which is expensive and disadvantageous for continuous production. The Chinese patent application discloses a quantum dot diffusion plate, in which other auxiliary agents than quantum dots are made into a masterbatch, and the quantum dots, the masterbatch and the substrate are uniformly mixed in a mixing device and then extruded into a sheet material. Although this method is convenient, when mixed by mechanical force, the ligands or protective layers on the surface of the quantum dots are inevitably destroyed to different degrees, and the quantum dots are inactivated when they come into contact with oxygen and water in the air, which affects the luminous efficiency and stability. In the quantum dot diffusion plate manufactured by this solution, the quantum dots are distributed in the substrate, and oxygen and water are inevitably eroded into the quantum dots on the surface during use, which easily causes the quantum dots on the surface to be inactivated and the brightness to be attenuated. Summary of the Invention [Problem to be solved by the invention]
[0004] The technical problem to be solved by the present invention is to overcome the defects and deficiencies of the conventional quantum dot diffusion plate, such as the complicated process and high cost, and the quantum dots being inactivated when they come into contact with oxygen and water in the air, which affects the luminous efficiency and stability, and to provide a quantum dot diffusion plate that has high luminous efficiency, can emit light stably, and is manufactured easily and at low cost. [Means for solving the problem]
[0005] An object of the present invention is to provide a method for manufacturing the quantum dot diffuser plate.
[0006] Another object of the present invention is to provide applications of said quantum dot diffuser.
[0007] The above object of the present invention is achieved by the following technical solutions.
[0008] A quantum dot diffusion plate, comprising a diffusion layer, a quantum dot layer, and a transparent layer, the quantum dot layer being disposed between the diffusion layer and the transparent layer; Here, the quantum dot layer is It contains the following components and their weight parts: 100 parts of base material, 1 to 2 parts of lubricant, 0.3 to 3 parts of antioxidant, 0.3 to 3 parts of weather resistance agent, and 0.05 to 3 parts of quantum dots.
[0009] The quantum dot diffusion plate of the present invention is manufactured by using three-layer co-extrusion technology, and has a sandwich structure, the middle layer is a quantum dot layer, and the upper and lower two layers are a diffusion layer and a transparent layer, where the transparent layer can also be formed with a matte effect by pressing rolls. The design of the upper and lower diffusion layers and the transparent layer ensures the light efficiency of the diffusion plate, and also ensures that the quantum dots are protected by the upper and lower two layers, which can avoid deactivation due to external factors during use and storage, and can improve the brightness retention rate.
[0010] Preferably, the thickness of the quantum dot layer is controlled to be 0.1 to 0.5 mm, and the thickness of the diffusion layer and the transparent layer is 0.3 mm or more.
[0011] Furthermore, the quantum dots are made of an alloy material consisting of two or more of Cd, Zn, Se, S, In, and P.
[0012] Preferably, the quantum dots are selected from one or more of CdZnSeS, CdZnSe, CdZnS.
[0013] Furthermore, the quantum dots are added as a suspension of the quantum dots and an organic solvent selected from one or more of styrene, toluene, xylene, cyclohexane, n-hexane, ethanol, methanol, isopropanol, acetone, ethyl acetate, anisole, and tetrahydrofuran. The present invention ensures uniform distribution of the quantum dots on the diffusion plate by dissolving the quantum dots in a hydrophobic organic solvent and accurately adding the suspension of the quantum dots to the mixture of the quantum dot layer, while reducing the chance of the quantum dots coming into contact with water oxygen during the processing, avoiding the deactivation of the quantum dots due to the contact of the quantum dots with water oxygen during the processing, and improving the stability. Preferably, the organic solvent is selected from one or more of non-polar organic solvents such as styrene, toluene, cyclohexane, and n-hexane, and more preferably, the organic solvent is styrene or n-hexane.
[0014] Preferably, the concentration of the quantum dots in the suspension of quantum dots is 5 to 20 wt %, and more preferably, the concentration of the quantum dots in the suspension of quantum dots is 10 to 20 wt %.
[0015] Furthermore, the diffusion layer is It contains the following components and their weight parts: 100 parts of base material, 5 to 15 parts of light diffusion master batch, 1 to 2 parts of lubricant, 0.3 to 3 parts of antioxidant, and 0.3 to 3 parts of weather resistance agent.
[0016] Furthermore, the light diffusion master batch contains the following components and their weight parts: 88 to 93 parts of base material, 6 to 10 parts of light diffusion agent, 0.5 to 1 part of antioxidant, and 0.5 to 1 part of lubricant.
[0017] Preferably, the light diffusion master batch components are uniformly mixed, extruded at 160 to 200° C., and granulated to obtain the light diffusion master batch components.
[0018] Here, the light diffusing agent is one or more of acrylate-based and silicone-based light diffusing agents. Preferably, the light diffusing agent is a silicone-based light diffusing agent, and is selected from one or more of methyl silicone resin microsphere diffusing agents, phenyl silicone resin microsphere diffusing agents, methyl phenyl silicone resin light diffusing agents, etc.
[0019] Furthermore, the transparent layer is It contains the following components and their weight parts: 100 parts of base material, 1 to 2 parts of lubricant, 0.3 to 3 parts of antioxidant, and 0.3 to 3 parts of weather resistance agent.
[0020] Furthermore, the substrate is selected from one or more of polypropylene (PP), cycloolefin polymer (COP), cycloolefin copolymer (COC), polystyrene (GPPS), polymethacrylate (PMMA), styrene-acrylonitrile copolymer (AS), styrene-maleic anhydride copolymer (SMA) copolyester (PETG / PCTG) materials, preferably materials that can be extruded at 200° C. or less.
[0021] It is preferred that the diffusion layer, quantum dot layer and transparent layer of the present invention are made of the same substrate, and the linear expansion coefficients of the three layers are consistent, which effectively avoids the problem of image distortion caused by the size difference between different layers due to changes in environmental temperature during use and storage.
[0022] More preferably, the base material is GPPS, the melt index (200° C. / 5 kg) is preferably 2 to 5 g / 10 min, and the residual monomer content is 0.05% or less.
[0023] Furthermore, the weathering agent is selected from one or more of hindered amine-based light stabilizers, benzotriazole-based, benzophenone-based, triazine-based, and salicylate-based weathering agents.
[0024] Further, the antioxidant is selected from one or more of hindered phenol-based, phosphite-based, metal alkylthiophosphate-based, carbamic acid-based, and organic sulfur-based antioxidants. Preferably, the antioxidant is a phosphate-based antioxidant.
[0025] Furthermore, the lubricant may be n,n , - selected from one or more of ethylene bisstearamide, polysiloxane, stearates, PE wax, PP wax, ethylene bisstearylamide;
[0026] The present invention further provides a method for producing the quantum dot diffusion plate, In the preparation of a mixture for a diffusion layer, a step S1 of uniformly mixing a base material, a light diffusion master batch, a lubricant, an antioxidant and a weathering agent to obtain a mixture for a diffusion layer; In the preparation of the mixture for the quantum dot layer, a step S2 of uniformly mixing a base material, a lubricant, an antioxidant and a weathering agent to obtain a mixture for the quantum dot layer; In the preparation of a mixture for a transparent layer, a step S3 of uniformly mixing a base material, a lubricant, an antioxidant and a weathering agent to obtain a mixture for a transparent layer; The manufacturing method of the quantum dot diffusion plate includes adding quantum dots and an organic solvent as a quantum dot suspension to the quantum dot layer mixture obtained in step S2 by a weighing system, mixing uniformly, and then extruding the mixture for the diffusion layer obtained in step S1 and the mixture for the transparent layer obtained in step S3 simultaneously to obtain a three-layer co-extrusion and post-processing step S4.
[0027] Furthermore, the machine rotation speed during mixing in steps S1 to S3 is 100 to 800 rpm, and the mixing time is 1 to 5 minutes.
[0028] Furthermore, in step S4, the extruder for the diffusion layer mixture and the transparent layer mixture is a single-screw extruder, the temperature of one zone of the machine is set to 80-100°C, the temperatures of the other zones are set to 170-200°C, and the screw rotation speed is 10-200 rpm, the extruder for the quantum dot layer mixture is a single-screw extruder, the screw is a split screw, the metering section includes two or more sets of DIS elements, the feed of the DIS element is 6 or more, the tip of the metering section is equipped with a water-proof oxygen-blocking liquid metering pump, the temperature of one zone of the machine is set to 80-100°C, the temperatures of the other zones are set to 160-180°C, and the screw rotation speed is 10-100 rpm.
[0029] Furthermore, the temperature of the three-layer co-extrusion die is 170 to 190°C.
[0030] The present invention further provides applications of the quantum dot diffuser in the fields of displays and lighting. Effect of the Invention
[0031] The present invention has the following beneficial effects:
[0032] The present invention is a quantum dot diffusion plate, which includes a diffusion layer, a quantum dot layer and a transparent layer, and the quantum dot layer is disposed between the diffusion layer and the transparent layer. Meanwhile, the design of the upper and lower diffusion layers and the transparent layer ensures the light efficiency of the diffusion plate, and further ensures that the quantum dots are protected by the upper and lower two layers, so that the quantum dots are prevented from being deactivated due to the influence of external factors during use and storage, and the brightness retention rate can be improved. In addition, in the present invention, the upper, middle and lower three layers are all made of the same substrate, so that the linear expansion coefficients of the three layers are the same, and the problem of image distortion caused by the size difference between different layers due to the change in environmental temperature during use and storage can be effectively avoided. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0033] The present invention will be further described below with reference to specific examples, which are not intended to limit the present invention in any way. The reagents, methods and equipment used in the present invention are those commonly used in the art unless otherwise specified.
[0034] The polystyrene GPPS was purchased from Total, model number GP1050.
[0035] For the quantum dot suspension 1, QD-530 (whose component is CdZnSeS and was purchased from Guangdong Pu Jiafu Photoelectric Science and Technology Co., Ltd.) was added to styrene to prepare quantum dot suspension 1 with a quantum dot content of 20 wt %.
[0036] Regarding the quantum dot suspension 2, QD-530 (the component is CdZnSeS, purchased from Guangdong Pu Jiafu Photoelectric Science and Technology Co., Ltd.) was added to n-hexane to prepare the quantum dot suspension 2 with a quantum dot content of 20 wt %.
[0037] For the quantum dot suspension 3, QD-530 (the component is CdZnSeS, purchased from Guangdong Pu Jiafu Photoelectric Technology Co., Ltd.) was added to isopropanol to prepare quantum dot suspension 3 with a quantum dot content of 20 wt %.
[0038] For the quantum dot suspension 4, QD-530 (the component is CdZnSeS, purchased from Guangdong Pu Jiafu Photoelectric Technology Co., Ltd.) was added to ethyl acetate to prepare quantum dot suspension 4 with a quantum dot content of 20 wt %.
[0039] For the quantum dot suspension 5, Xingshuo XSQD (whose component is InZnP and was purchased from Jiangsu Xingshuo Nano Science and Technology Co., Ltd.) was added to toluene to prepare quantum dot suspension 5 with a quantum dot content of 20 wt %.
[0040] The light diffusion masterbatch (LSPS-MB) is obtained by uniformly mixing 90 parts of polystyrene, 8 parts of light diffusion agent (silicone light diffusion agent), 1 part of antioxidant, and 1 part of lubricant, then feeding the mixture into a twin-screw extruder, extruding at 160-200°C, and granulating the mixture.
[0041] In the present invention, the weathering agent, antioxidant and lubricant used in each of the examples and comparative examples and in the light-diffusing master batches are all the same.
[0042] All reagents and materials used in the following examples are commercially available unless otherwise specified.
[0043] [Examples 1 to 9] Quantum dot diffuser The components and mixing ratio of the quantum dot diffuser plate are shown in Table 1.
[0044] [Table 1]
[0045] The quantum dot diffusion plates of Examples 1 to 8 were manufactured as follows: In the manufacture of the mixture of the diffusion layer, polystyrene substrate (GPPS), light diffusion masterbatch, N,N , - Step S1 of uniformly mixing ethylene bisstearylamide lubricant, bis(2,6-di-tert-butyl-4-methylphenyl)pentaerythritol diphosphate and tetrakis[β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate]pentaerythritol ester antioxidant (mass ratio 1:2), bis(2,2,6,6-tetramethyl-4-piperidinyl)sebacate and 2-(2-hydroxy-5-octyl)phenylbenzotriazazole weathering agent (mass ratio 1:1) in a high mixer and putting it into a 1# extruder silo to prepare for use; In the manufacture of the quantum dot layer (intermediate layer) mixture, polystyrene substrate (GPPS), N,N ,- Step S2 of uniformly mixing ethylene bisstearylamide lubricant, bis(2,6-di-tert-butyl-4-methylphenyl)pentaerythritol diphosphate and tetrakis[β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate]pentaerythritol ester antioxidant (mass ratio 1:2), bis(2,2,6,6-tetramethyl-4-piperidinyl)sebacate and 2-(2-hydroxy-5-octyl)phenylbenzotriazazole weathering agent (mass ratio 1:1) in a high mixer, and putting it into the 2# extruder silo to prepare for use; In the manufacture of the mixture of transparent layers, polystyrene substrate (GPPS), N,N , - Step S3 of uniformly mixing ethylene bisstearylamide lubricant, bis(2,6-di-tert-butyl-4-methylphenyl)pentaerythritol diphosphate and tetrakis[β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate]pentaerythritol ester antioxidant (mass ratio 1:2), bis(2,2,6,6-tetramethyl-4-piperidinyl)sebacate and 2-(2-hydroxy-5-octyl)phenylbenzotriazazole weathering agent (mass ratio 1:1) in a high mixer, and then putting the mixture into a 3# extruder silo to prepare for use; In the manufacture of the quantum dot diffusion plate, the 2# extruder for manufacturing the intermediate layer is first opened, and after the material to be melted is discharged from the die, the water-proof and oxygen-proof metering pump equipped with the quantum dot suspension in the 2# extruder is opened, and the quantum dot suspension is fed into the 2# extruder and mixed uniformly. Then, the 1# extruder and the 3# extruder are opened to carry out the co-extrusion of three layers, and after cooling and cutting, the quantum dot diffusion plate is obtained. Step S4. Here, the rotation speed during mixing in steps S1 to S3 is 100 to 800 rpm, and the mixing time is 1 to 5 minutes. In step S4, the 1# extruder and the 3# extruder are single-screw extruders, the temperature of the first zone of the machine is set to 80-100°C, the temperature of the other zones is set to 170-200°C, and the screw rotation speed is 10-200 rpm; the 2# extruder (quantum dot layer) is a single-screw extruder, the screw is a split screw, the metering section includes two or more sets of DIS elements, the feed of the DIS element is 6 or more, and the tip of the metering section is equipped with a water-proof oxygen-blocking liquid metering pump, the temperature of the first zone of the machine is set to 80-100°C, the temperature of the other zones is set to 160-180°C, and the screw rotation speed is 10-100 rpm; The thickness of the quantum dot layer of the manufactured quantum dot diffuser plate is controlled to about 0.1 to 0.5 mm.
[0046] Here, the differences between Examples 2, 3, 4 and 5 and Example 1 are as follows: in Examples 2, 3, 4 and 5, quantum dot suspension 1 is replaced with quantum dot suspension 2, quantum dot suspension 3, quantum dot suspension 4 and quantum dot suspension 5, respectively; the differences between Example 6 and Example 1 are as follows: the amount of quantum dot suspension 1 is reduced from 10 parts to 1 part; the differences between Example 7 and Example 1 are as follows: the amount of quantum dot suspension 1 is increased from 10 parts to 15 parts; the differences between Example 8 and Example 1 are as follows: the amount of antioxidant, weatherproofing agent and lubricant is doubled; the differences between Example 9 and Example 1 are as follows: in Example 9, the mixture of quantum dot suspension and quantum dot layer in Example 1 is directly and uniformly mixed; the other parameters and implementation methods are the same as those of the examples; and finally, a quantum dot diffusion plate with a three-layer structure of diffusion layer-quantum dot layer-transparent layer is obtained, but the other parameters and manufacturing methods refer to Example 1.
[0047] [Comparative Examples 1 to 10] Quantum dot diffuser The amounts of the quantum dot diffusers added in the comparative examples are shown in Table 2.
[0048] [Table 2]
[0049] The difference between Comparative Example 1 and Example 1 is that in Comparative Example 1, the light diffusion master batch added to extruder 1# in Example 1 was divided into two equal parts, which were added to extruder 1# and extruder 3# in the corresponding mixing ratio, while the other parameters and implementation methods were the same as those in Example 1. Finally, a quantum dot diffusion plate with a three-layer structure of diffusion layer-quantum dot layer-diffusion layer was obtained.
[0050] The difference between Comparative Example 2 and Example 1 is that in Comparative Example 2, the light diffusion masterbatch added to extruder 1# in Example 1 was added to extruder 2# for intermediate layer, and other parameters and implementation methods were the same as those in Example 1. Finally, a quantum dot diffusion plate with a three-layer structure of transparent layer-quantum dot diffusion layer-transparent layer was obtained.
[0051] Comparative Example 3 differs from Example 1 in that in Comparative Example 3, the extruders for the diffusion layer mixture, quantum dot layer mixture, and transparent layer mixture in Example 1 are replaced, with extruder 1# extruding the quantum dot layer mixture (the quantum dot suspension was added using a water-tight, oxygen-blocking metering pump), extruder 2# extruding the diffusion layer mixture, and extruder 3# extruding the transparent layer mixture, resulting in a quantum dot diffusion plate with a three-layer structure of quantum dot layer-diffusion layer-transparent layer.
[0052] Comparative Example 4 differs from Example 1 in that in Comparative Example 4, the quantum dot layer mixture was extruded using extruder 1# (the quantum dot suspension was added using a water-tight, oxygen-blocking metering pump) and the diffusion layer mixture was extruded using extruder 2#, resulting in a quantum dot diffusion plate with a two-layer structure consisting of a quantum dot layer and a diffusion layer.
[0053] The difference between Comparative Example 5 and Example 1 is that in Comparative Example 5, the diffusion layer mixture, quantum dot layer mixture, transparent layer mixture, and quantum dot suspension in Example 1 were mixed uniformly and then added directly to extruder #1, and a plate was extruded by one extruder, and a quantum dot diffusion plate with a single quantum dot diffusion layer structure was finally obtained.
[0054] The difference between Comparative Example 6 and Example 1 is that in Comparative Example 6, the diffusion layer mixture, quantum dot layer mixture, and transparent layer mixture in Example 1 were mixed uniformly and then added directly to the 2# extruder, and the quantum dot suspension was added to the 2# extruder by a metering pump, and a plate was directly extruded by a single 2# extruder, and a quantum dot diffusion plate with a single quantum dot diffusion layer structure was finally obtained.
[0055] The difference between Comparative Example 7 and Example 1 is that in Comparative Example 7, the quantum dot suspension 1 in Example 1 was replaced with the same amount of quantum dot powder QD-530, which was added to the metering pump position of the 2# extruder by side feed method. Other parameters and implementation methods were the same as those in Example 1. Finally, a quantum dot diffusion plate with a three-layer structure of diffusion layer-quantum dot layer-transparent layer was obtained.
[0056] The difference between Comparative Example 8 and Example 7 is that in Comparative Example 8, the same amount of quantum dot powder QD-530 as in Comparative Example 7 was fed into the main feed port of extruder #2 using the main feed method, and other parameters and implementation methods were the same as in Example 1. Finally, a quantum dot diffusion plate with a three-layer structure consisting of a diffusion layer-quantum dot layer-transparent layer was obtained.
[0057] The differences between Comparative Examples 9 to 10 and Example 1 are that in Comparative Examples 9 to 10, the amount of quantum dot suspension 1 added in Example 1 was changed to 0.2 or 25 parts, respectively, while the other parameters and implementation methods were the same as in Example 1. Finally, a quantum dot diffusion plate with a three-layer structure consisting of a diffusion layer-quantum dot layer-transparent layer was obtained.
[0058] [Experimental example] Performance test The quantum dot diffusion plates obtained in the examples and comparative examples were measured for their luminance decay rates at high temperature and at high temperature and high humidity. The specific measurement methods are as follows. In the high temperature storage stability test, after leaving it in a forced air oven at a specified temperature of 85℃ for 500 hours, the quantum dot diffuser was placed on the blue LED module, and the center point brightness of the diffuser before and after the experiment was tested using a Konica Minolta LS-100 handheld photometer (specified current 65mA, specified voltage 6.5V), and the brightness retention rate was calculated. In the high temperature and high humidity storage stability test, the film was left at a temperature of 60°C and a humidity of 90% RH for 500 hours, the change in luminance before and after the experiment was measured, and the luminance retention rate was calculated.
[0059] The test results are shown in Table 3.
[0060] [Table 3]
[0061] As is clear from the table, the quantum dot diffusion plate manufactured by the solution of the present invention has a luminance retention rate of 85% or more under high temperature and high temperature and high humidity conditions, and is excellent in stability. Here, in Examples 1 and 2, a quantum dot suspension is manufactured using styrene and n-hexane as a solvent, and the quantum dot diffusion plate obtained by the manufacturing has a better luminance retention rate effect. In Example 9, compared with Example 1, the diffusion plate structure is the same and the quantum dots are added in the same manner, but since the quantum dots are added by the main feed method and are mechanically mixed with other components before addition, the ligands on the surface of the quantum dots are destroyed more due to the action force during the mixing process, and the luminance retention rate under high temperature and high humidity conditions is slightly reduced.
[0062] In Comparative Examples 1 to 6, the three-layer structure of the quantum dot diffuser plate was changed compared to Example 1, and the luminance retention of the diffuser plate was significantly reduced.
[0063] In Comparative Examples 7-8, the structure of the diffusion plate is the same as that of Example 1, but the addition method and form of the quantum dots are different. The quantum dots were added directly without being prepared as a solution, so the luminance retention rate of the diffusion plate was also significantly reduced. Here, the quantum dot powder needs to be mechanically blended with the resin particle component during main feed, which easily destroys the ligands on the surface of the quantum dots and impairs the luminance efficiency of the quantum dots, while the quantum dots need to undergo a compression and melting process of the resin during main feed, which also easily destroys the ligands on the surface of the quantum dots and impairs the luminance efficiency of the quantum dots. The quantum dots do not need to be mechanically mixed with the resin particle component during side feed, and do not need to undergo compression and melting processes, which reduces the destruction of the ligands of the quantum dots. It was found that when the quantum dots are not protected by an organic solvent, if they are added directly by mechanical blending or side feed (which reduces the action of external forces), both of these methods affect the luminance efficiency of the quantum dots and the luminance retention rate under high temperature and high humidity.
[0064] In Comparative Examples 9 and 10, the content of the quantum dot solution was changed compared to the Examples, and the content of the quantum dots per unit volume was either too high or too low, resulting in a decrease in the luminance retention rate under high temperature and high humidity conditions.
[0065] The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples. Any changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principles of the present invention are equivalent replacement methods, and all fall within the protection scope of the present invention.
Claims
1. The light emitting device includes a diffusion layer, a quantum dot layer, and a transparent layer, the quantum dot layer being disposed between the diffusion layer and the transparent layer; Here, the quantum dot layer is A quantum dot diffusion plate comprising the following components and their weight parts: 100 parts of a substrate, 1 to 2 parts of a lubricant, 0.3 to 3 parts of an antioxidant, 0.3 to 3 parts of a weathering agent, and 0.05 to 3 parts of quantum dots.
2. 2. The quantum dot diffusion plate according to claim 1, wherein the quantum dots are made of an alloy material consisting of two or more of Cd, Zn, Se, S, In, and P.
3. 3. The quantum dot diffuser according to claim 2, wherein the quantum dots are selected from one or more of CdZnSeS, CdZnSe, and CdZnS.
4. The quantum dots are added as a suspension of the quantum dots and an organic solvent selected from one or more of styrene, toluene, xylene, cyclohexane, n-hexane, ethanol, methanol, isopropanol, acetone, ethyl acetate, anisole, and tetrahydrofuran. The quantum dot diffuser of claim 1.
5. The diffusion layer is The quantum dot diffusion plate according to claim 1, characterized in that it comprises the following components and their weight parts: 100 parts of substrate, 5 to 15 parts of light diffusion master batch, 1 to 2 parts of lubricant, 0.3 to 3 parts of antioxidant, and 0.3 to 3 parts of weather resistance agent.
6. The light diffusion master batch comprises 88 to 93 parts of a base material, 6 to 10 parts of a light diffuser, 0.5 to 1 part of an antioxidant, and 0.5 to 1 part of a lubricant, and the weight parts thereof. The quantum dot diffuser plate according to claim 5.
7. The transparent layer is The quantum dot diffusion plate according to claim 1, characterized in that it contains the following components and their weight parts: 100 parts of base material, 1 to 2 parts of lubricant, 0.3 to 3 parts of antioxidant, and 0.3 to 3 parts of weather resistance agent.
8. The quantum dot diffuser according to any one of claims 1, 5 to 7, characterized in that the substrate is selected from one or more of PP, COC, COP, GPPS, PMMA, AS, SMA, PETG, and PCTG materials.
9. In the preparation of a mixture for a diffusion layer, a step S1 of uniformly mixing a base material, a light diffusion master batch, a lubricant, an antioxidant, and a weathering agent to obtain a mixture for a diffusion layer; In the preparation of the mixture for the quantum dot layer, a step S2 of uniformly mixing a base material, a lubricant, an antioxidant and a weathering agent to obtain a mixture for the quantum dot layer; In the preparation of a mixture for a transparent layer, a step S3 is performed in which a base material, a lubricant, an antioxidant and a weathering agent are uniformly mixed to obtain a mixture for a transparent layer; The method for producing the quantum dot diffusion plate according to any one of claims 1 to 8, further comprising: adding the quantum dots and the organic solvent as a suspension of the quantum dots to the mixture of the quantum dot layer obtained in step S2 by a weighing system, mixing uniformly, and then extruding the mixture of the diffusion layer obtained in step S1 and the mixture of the transparent layer obtained in step S3 at the same time, co-extruding the three layers, and performing post-processing.
10. 9. Application of the quantum dot diffuser according to claim 1 in the fields of displays and lighting.
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